Pellicle for EUV lithography

Abstract

To provide a pellicle for EUV lithography that prevents the peeling of a pellicle film even at high temperature, for example, 500°C or higher.SOLUTION: A pellicle includes: a frame having an opening; a pellicle film that is stretched and supported on one end side of the frame so as to cover the opening; and a pellicle film adhesive layer for fixing the pellicle film to the frame. The pellicle is used in EUV lithography. The pellicle film adhesive layer has a linear expansion coefficient of more than 0 and 20×10-6 / K or less.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a pellicle for EUV lithography. [Background technology]

[0002] In the manufacturing process of semiconductor devices such as large-scale integrated circuits (LSIs) and ultra-LSIs, as well as liquid crystal display panels, patterning is performed by irradiating light onto a photosensitive layer through a mask (also called an exposure master or reticle). If foreign matter adheres to the mask, the light is absorbed by the foreign matter or is reflected and bent by the surface of the foreign matter. As a result, the formed pattern may be deformed or have rough edges, resulting in problems such as impaired dimensions, quality, and appearance after patterning.

[0003] To solve this problem, a method has been adopted in which a pellicle having a light-transmitting pellicle film is attached to the surface of the mask to suppress adhesion of foreign matter. The pellicle generally has a frame (pellicle frame), a pellicle film which is a transparent thin film arranged on one side of the frame, a pellicle film adhesive layer which fixes the pellicle film to the frame, and a mask adhesive layer which is arranged on the other side of the frame (the side opposite the pellicle film of the pellicle frame) to be attached to the photomask (for example, Patent Document 1).

[0004] The wavelength of light used in lithography is becoming shorter, and the use of EUV (Extreme Ultra Violet) light is being considered for next-generation lithography technology. EUV light refers to light with a wavelength in the soft X-ray or vacuum ultraviolet region, specifically, light rays with a wavelength of approximately 13.5 nm ± 0.3 nm.

[0005] EUV light is easily absorbed by all materials. If the pellicle film absorbs EUV light, it not only causes exposure defects but can also be damaged by heat generated by the energy of the EUV light. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2019-113857 Summary of the Invention [Problem to be solved by the invention]

[0007] For example, during EUV exposure, the pellicle film absorbs light, causing its temperature to rise to over 500°C. In an EUV exposure environment where temperatures reach over 500°C, the heat is transferred to the pellicle film adhesive layer, causing deformation or peeling of the pellicle film adhesive layer, which can lead to the pellicle film peeling.

[0008] The present invention has been proposed in consideration of the above-described conventional situation, and an object of the present invention is to provide a pellicle in which peeling of the pellicle film is suppressed even at high temperatures, such as 500°C or higher, in EUV lithography. [Means for solving the problem]

[0009] [1] A pellicle comprising: a frame having an opening; a pellicle membrane stretched and supported on one side of the frame so as to cover the opening; and a pellicle membrane adhesive layer that adheres the pellicle membrane to the frame, It is used in EUV lithography, and the linear expansion coefficient of the pellicle film adhesive layer is more than 0 and 20 × 10 -6 / K or less. [2] The linear expansion coefficient of the pellicle film adhesive layer is greater than 0 and is 15 × 10 -6 / K or less. [3] The pellicle according to [1] or [2], wherein the pellicle film adhesive layer comprises an inorganic adhesive. [4] The pellicle according to [3], wherein the inorganic adhesive contains at least one material selected from the group consisting of zirconia, alumina, and silica. [5] A pellicle according to any one of [1] to [4], wherein the ratio of the linear expansion coefficients of the frame and the pellicle film adhesive layer (linear expansion coefficient of the frame / linear expansion coefficient of the pellicle film adhesive layer) is 0.4 to 2.0. [6] The pellicle according to any one of [1] to [4], wherein the coefficient of linear expansion of the pellicle film adhesive layer is equal to or greater than the coefficient of linear expansion of the frame. [7] The pellicle according to any one of [1] to [6], wherein the thickness of the pellicle film adhesive layer is 0.8 mm to 2.5 mm. [8] The pellicle according to any one of [1] to [7], wherein the pellicle membrane includes a carbon membrane. [9] The pellicle according to any one of [1] to [8], wherein the frame contains at least one material selected from the group consisting of titanium, a titanium alloy, and a carbon material.

[10] A pellicle membrane adhesive disposed between a frame and a pellicle membrane in a pellicle, The pellicle film adhesive is provided on a pellicle used in EUV lithography and has a linear expansion coefficient of more than 0 and less than 20×10 -6 / K or less pellicle membrane adhesive.

[11] A pellicle-equipped photomask, in which the pellicle according to any one of [1] to [9] is attached to the photomask.

[12] A method for manufacturing a semiconductor device, comprising a step of exposing using the pellicle-equipped photomask according to

[11] .

[13]

[11] A method for manufacturing a liquid crystal display panel, comprising a step of exposing using the pellicle-equipped photomask according to

[11] . [Effects of the Invention]

[0010] According to the present invention, it is possible to provide a pellicle in which peeling of the pellicle film is suppressed even at high temperatures, for example, 500° C. or higher. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a diagram showing an example of a configuration of a pellicle. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, a description will be given of an embodiment of the present invention (hereinafter abbreviated as "embodiment") with reference to the drawings. The present invention is not limited to the following embodiment, and various modifications can be made within the scope of the gist of the present invention.

[0013] An overview of the pellicle according to this embodiment will be described below. Fig. 1(a) is a top view showing a pellicle 1, and Fig. 1(b) is a longitudinal cross-sectional view. In the following description, the upper side of each figure will be referred to as "top" and the lower side as "bottom."

[0014] In this specification, EUV light refers to light with a wavelength of 5 nm or more and 30 nm or less. The wavelength of EUV light is preferably 5 nm or more and 14 nm or less, and specifically, EUV light refers to light with a wavelength of about 13.5 nm±0.3 nm.

[0015] [Pellicle] Pellicle 1 is a structure that protects a photomask from dust in photolithography, etc. Pellicle 1 includes a frame 2, a pellicle film 3, a pellicle film adhesive layer 4, a mask adhesive layer 5, and a release film 6. The pellicle 1 of this embodiment is used in EUV lithography, and the linear expansion coefficient of the pellicle film adhesive layer 4 is greater than 0 and less than 20×10 -6 / K or less.

[0016] <frame> The frame 2 (pellicle frame) can have any shape that allows the pellicle film 3 to be stretched over the frame 2. For example, the frame 2 can have an outer shape such as a rectangle, a square, a rectangle, or an ellipse when viewed from the front. The rectangle can be a square, a rectangle, or the like, and can have both right-angled corners and a roughly rectangular shape with rounded corners (FIG. 1). The polygon can be a triangle, a trapezoid, a parallelogram, a pentagon, a hexagon, or the like.

[0017] The size of the frame 2 and its opening can be determined according to the size of the photomask. When the frame 2 has a rectangular shape consisting of a pair of long sides and a pair of short sides in a front view, the long side length can be 80 mm to 300 mm, the short side length can be 50 mm to 250 mm, the widths of the long sides and the short sides can each be 1.0 mm to 20.0 mm, and / or the height of the frame can be 0.5 mm to 8.0 mm.

[0018] As shown in Fig. 1, the frame 2 has edges. The edges can have rod-shaped edge members that extend linearly. A pair of edge members can be arranged parallel to each other with a gap between them, and similarly, another pair of edge members can be arranged parallel to each other with a gap between them. The ends of two contacting edge members can be connected so that they form approximately a right angle with each other.

[0019] The frame 2 can be made of known materials such as aluminum, aluminum alloys (e.g., 5000 series, 6000 series, 7000 series, etc.), titanium, titanium alloys (e.g., Ti-Al-V, Ti-V-Cr-Sn-Al, etc.), steel, stainless steel, magnesium alloys, ceramics (e.g., SiC, AlN, Al2O3, etc.), ceramic-metal composites (e.g., Al-SiC, Al-AlN, Al-Al2O3, etc.), engineering plastics such as PE, PA, PC, PEEK, etc., fiber composites such as GFRP, CFRP, etc., carbon materials, or combinations thereof. Among these, titanium, titanium alloys, and carbon materials are preferred.

[0020] Titanium and titanium alloys are preferred because their small coefficient of linear thermal expansion reduces deformation at high temperatures and suppresses expansion and contraction of the frame due to heat. While the type is not particularly limited, preferred examples include titanium, titanium alloys such as Ti-V-Al alloys and Ti-V-Cr-Sn-Al alloys, Ti-Nb compounds, and Ti-Mo compounds. Carbon materials have excellent heat resistance and high strength, so by constructing the frame 2 from a carbon material, deformation of the frame 2 and wrinkles in the pellicle film 3 can be more reliably prevented even at high temperatures during EUV lithography.

[0021] The carbon material is not particularly limited, but examples thereof include graphite, carbon nanotubes, carbon fibers, and glassy carbon, and among these, graphite, glassy carbon, or carbon nanotubes are preferred.

[0022] The frame 2 may be provided with ventilation holes. By providing the ventilation holes, the difference in air pressure between the inside and outside of the closed space formed by the pellicle 1 and the photomask can be eliminated, and swelling or denting of the pellicle film 3 can be prevented. It is also preferable to attach a dust filter to the ventilation holes. In this way, it is possible to prevent foreign matter from entering the closed space formed by the pellicle 1 and the photomask from the outside through the ventilation holes.

[0023] If necessary, an adhesive (e.g., acrylic, vinyl acetate, silicone, rubber-based adhesive, etc.) or grease (e.g., silicone-based, fluorine-based grease, etc.) may be applied to the inner surface or entire surface of the frame 2 to capture foreign matter. Additionally, the frame 2 may be provided with a jig hole or the like for attaching the pellicle 1 to a photomask, if necessary.

[0024] <Pellicle membrane> The pellicle film 3 is a transparent thin film having a thickness of 10 μm or less, and is formed so as to sufficiently transmit light emitted from a light source in photolithography.

[0025] The material constituting the pellicle membrane 3 is not particularly limited, but examples thereof include nitrocellulose, cellulose derivatives, fluoropolymers, carbon materials, silicon, silicon compounds, etc., and among these, carbon materials are preferred.

[0026] The pellicle film 3 is preferably a carbon film containing a carbon structure obtained by heating carbon or a compound containing carbon atoms.

[0027] The carbon film is produced by, for example, including a step (step I) of depositing a film containing carbon atoms on a substrate, a step (step II) of heating the film deposited on the substrate at 800 to 1400°C in a nitrogen atmosphere to form a carbon film, and a step (step III) of peeling the carbon film from the substrate.

[0028] In (Step I), the compound containing carbon atoms is not particularly limited as long as it is carbonized by heating, and is preferably an organic material.

[0029] The compound containing carbon atoms is more preferably at least one selected from the group consisting of polyimide compounds, polybenzoxazine compounds, polyacrylonitrile compounds, polyisocyanate compounds, polyamide compounds, heteroaromatic ring compounds, polyphenylene resins, polyether resins, liquid crystal polymer resins, polyparaxylylene resins, phenolic resins, epoxy resins, and furan resins. The compound containing carbon atoms is more preferably at least one selected from the group consisting of polyimide compounds and polybenzoxazine compounds.

[0030] The substrate is not particularly limited as long as it has a melting point higher than 800 to 1400°C, which is the heating temperature when forming the carbon film, and for example, a silicon substrate (hereinafter also referred to as Si substrate) whose surface layer contains silicon dioxide (SiO2) is preferred. By producing a carbon film on a Si substrate, a carbon film with excellent in-plane film thickness uniformity can be produced without film breakage.

[0031] Known techniques can be applied to form carbon or a compound containing carbon atoms into a film, and arc plasma deposition (APD) is a preferred method for forming carbon into a film on a substrate, while spin coating is a preferred method for forming a compound containing carbon atoms into a film on a substrate. These methods make it possible to produce a carbon film with excellent in-plane film thickness uniformity.

[0032] In (Step II), the heating temperature is 800 to 1400° C., preferably 900 to 1300° C., and more preferably 1000 to 1200° C. Heating can be carried out using a heat treatment furnace or the like.

[0033] The heating time is preferably 1 minute to 10 hours, more preferably 10 minutes to 3 hours, and even more preferably 30 minutes to 2 hours, from the viewpoint of sufficiently converting carbon atoms into a turbostratic carbon structure.

[0034] In (Step III), the specific method for the step of peeling the carbon film from the substrate is not particularly limited, and examples thereof include a method including: a step of spin-coating a composition containing an acrylic resin or the like onto the carbon film obtained by heating to form a support film; a step of peeling the substrate by a hydrofluoric acid treatment or the like; a step of attaching a support frame to the peripheral edge of the carbon film of the structure consisting of the carbon film and the support film; and a step of removing the support film by an etching treatment or the like.

[0035] The thickness of the carbon film constituting the pellicle film 3 is preferably less than 1500 nm. The thickness of the carbon film is the thickness of the film as used in the ordinary sense. The upper limit of the thickness of the carbon film is more preferably 1200 nm or less, even more preferably 1000 nm or less, and even more preferably 500 nm or less. By making the thickness of the carbon film less than 1500 nm, it is possible to obtain a carbon film that does not develop cracks during production. The lower limit of the thickness of the carbon film is not particularly limited as long as it is greater than 0 nm.

[0036] The thickness of the carbon film can be controlled, for example, by adjusting the thickness of a film containing carbon atoms when the film is laminated on a substrate in a method for producing a pellicle film.

[0037] <Pellicle film adhesive layer> As shown in FIG. 1( b ), the pellicle film 3 is adhered and fixed to one end of the frame 2 by a pellicle film adhesive layer 4 , and covers the frame 2 .

[0038] In the pellicle 1 of the present invention, the coefficient of linear expansion (coefficient of linear thermal expansion) of the pellicle film adhesive layer 4 is greater than 0 and is 20×10 -6 / K or less. The linear expansion coefficient of the pellicle film adhesive layer 4 is 20 × 10 -6 By setting the temperature at 1000 K or less, deformation and peeling of the pellicle film adhesive layer 4 can be suppressed even at high temperatures, and peeling of the pellicle film 3 can be suppressed.

[0039] In this specification, the linear expansion coefficients (linear thermal expansion coefficients) of the pellicle film adhesive layer 4 and the frame 2 can be, for example, catalog values.

[0040] The linear expansion coefficient of the pellicle film adhesive layer 4 is greater than 0 and is 20 × 10 -6 / K or less, and 0 or more than 15 × 10 -6 / K or less is preferable, and it is more than 0 and 10 × 10 -6 It is more preferable that the value is 0.1 / K or less.

[0041] Such a linear expansion coefficient is 20 × 10 -6 An example of an adhesive with a viscosity of 1 / K or less is an inorganic adhesive. Here, the inorganic adhesive refers to an adhesive in which a thermosetting inorganic compound is dispersed in a dispersion medium mainly composed of water.

[0042] The pellicle film adhesive layer 4 preferably contains an inorganic adhesive, which contains, for example, at least one material selected from the group consisting of zirconia, alumina, and silica. Examples of inorganic adhesives include colloidal inorganic oxides and inorganic polymers. Examples of colloidal inorganic oxides include colloidal silica and colloidal alumina. Examples of inorganic polymers include polyphosphate compounds, polyaluminate compounds, polysiloxane compounds, and zirconia compounds.

[0043] Specific examples of such inorganic adhesives that can be used include commercially available products such as SUMICERUM (registered trademark) S-10A, S-18D, and S-30A (all manufactured by Asahi Chemical Industry Co., Ltd.), Aron Ceramics D (manufactured by Toagosei Co., Ltd.), and Ceramabond 835M and 569 (manufactured by Ordic Co., Ltd.).

[0044] The ratio of the linear expansion coefficients of frame 2 and pellicle film adhesive layer 4 (linear expansion coefficient of frame 2 / linear expansion coefficient of pellicle film adhesive layer 4) is preferably 0.4 to 2.0, and more preferably 0.6 to 1.5. It is even more preferable that the linear expansion coefficient of pellicle film adhesive layer 4 is equal to or greater than the linear expansion coefficient of frame 2 (i.e., the ratio is 1.0 or less). By making the linear expansion coefficients of the frame 2 and the pellicle film adhesive layer 4 similar, deformation and peeling of the pellicle film adhesive layer 4 caused by differences in linear expansion coefficients at high temperatures can be more effectively suppressed, and ultimately peeling of the pellicle film 3 can be more effectively suppressed.

[0045] The thickness of the pellicle film adhesive layer 4 is preferably, for example, 0.8 mm to 2.5 mm, and more preferably 1.0 mm to 2.0 mm, which ensures sufficient adhesive strength to the frame 2 while suppressing the amount of deformation of the pellicle film adhesive layer 4 as a whole when exposed to high temperatures.

[0046] <Mask adhesive layer> As shown in FIG. 1(b), a mask adhesive layer 5 for attaching the pellicle 1 to a photomask is disposed on the other end side of the frame 2 (the side of the frame 2 opposite to the pellicle film 3).

[0047] The mask adhesive layer 5 is composed of an adhesive such as an acrylic, rubber, vinyl, epoxy, or silicone adhesive, and more preferably an acrylic, rubber, or silicone adhesive, etc. The thickness of the mask adhesive layer 5 is preferably, for example, 0.2 mm to 2.5 mm.

[0048] <Release film> A release film 6 (liner) is disposed so as to cover the mask adhesive layer 5. This release film 6 protects the mask adhesive layer 5 when not in use, and is peeled off from the mask adhesive layer 5 when the pellicle 1 is in use.

[0049] A film of about 30 to 200 μm in thickness made of polyester or the like is generally used for the release film 6. If the peeling force required to peel the release film 6 from the mask adhesive layer 5 is too great, the mask adhesive layer 5 may be deformed during peeling. Therefore, to ensure an appropriate peeling force, the film surface in contact with the adhesive may be subjected to a release treatment such as silicone or fluorine.

[0050] In the pellicle 1 of this embodiment having such a configuration, the linear expansion coefficient of the pellicle film adhesive layer 4 is greater than 0 and is equal to or less than 20×10 -6 / K or less, deformation and peeling of the pellicle film adhesive layer 4 are suppressed even at high temperatures, thereby preventing peeling of the pellicle film. Therefore, the pellicle 1 of this embodiment has excellent structural stability and is suitable as a pellicle for EUV lithography.

[0051] The present invention also provides a pellicle film adhesive, that is, a pellicle film adhesive disposed between a frame and a pellicle film in a pellicle, the pellicle film adhesive being provided on a pellicle used in EUV lithography, and having a linear expansion coefficient of more than 0 and less than 20×10. -6 / K or less. Such a pellicle film adhesive is less likely to deform even at high temperatures.

[0052] The present invention also provides a photomask with a pellicle, in which the pellicle described above is attached to the photomask. In such a photomask with a pellicle, peeling of the pellicle film is suppressed even at high temperatures of, for example, 500° C. or higher in EUV lithography.

[0053] The present invention also provides a method for manufacturing a semiconductor device, which includes a step of exposing using a photomask with a pellicle. In this semiconductor device manufacturing method, peeling of the pellicle film is suppressed even at high temperatures, such as 500°C or higher, during EUV lithography, so adhesion of foreign matter can be effectively suppressed, and semiconductor devices with excellent patterning quality can be manufactured.

[0054] The present invention also provides a method for producing a liquid crystal display panel, which comprises a step of exposing using a photomask with a pellicle. In this method for manufacturing a liquid crystal display panel, peeling of the pellicle film is suppressed even at high temperatures, such as 500°C or higher, during EUV lithography, so adhesion of foreign matter can be effectively suppressed, and liquid crystal display panels with excellent patterning quality can be manufactured.

[0055] Although the embodiment of the present invention has been described above, the present invention is not limited to this and can be modified as appropriate within the scope of the invention. [Example]

[0056] The present invention will now be described in more detail with reference to examples and comparative examples. However, the present invention is not limited to the following examples as long as it does not deviate from the gist of the present invention.

[0057] [Fabrication of pellicle] Example 1 (1) Preparation of adhesive frame A pellicle frame made of glassy carbon with an outer diameter of 149 mm x 115 mm x height of 3 mm and width of 2 mm was prepared, and an acrylic adhesive was applied to the bottom surface to form an adhesive-coated frame.

[0058] (2) Preparation of carbon film A 15 wt% solution of a polyimide precursor (BPDA-ODA) synthesized from 3,3',4,4'-biphenyltetracarboxylic dianhydride (BDPA) and 4,4'-diaminodiphenyl ether (ODA) in N-methylpyrrolidone was spin-coated onto a Si substrate and imidized at 300°C for 1 hour under a nitrogen atmosphere to form a 400 nm thick polyimide film.

[0059] Subsequently, the substrate was placed in a heat treatment furnace and heated in an N2 flow atmosphere at 1100°C for 1 hour to carbonize it, thereby obtaining a carbon film with a thickness of 200 nm.

[0060] The substrate was then spin-coated at 500 rpm with a 15 wt% solution of polymethyl methacrylate (PMMA) in acetone to form a support film. The substrate was then immersed in a 40 wt% aqueous solution of hydrogen fluoride, and the PMMA-coated carbon film was peeled off from the substrate and washed with water. The PMMA-coated carbon film was then immersed in a 1:1 (weight ratio) solution of acetone and isopropyl alcohol to dissolve the PMMA. The carbon film was then transferred to the isopropyl alcohol solution using a glass substrate. The carbon film was then removed and dried to obtain a carbon film.

[0061] The obtained carbon film was attached to the upper end surface of the frame with adhesive via Aron Ceramic E (manufactured by Toagosei Co., Ltd.), thereby completing the pellicle of Example 1.

[0062] <Example 2> A pellicle was fabricated in the same manner as in Example 1, except that a frame made of a β alloy (Ti-15V-3Cr-3Sn-3Al) was used instead of glassy carbon, and Aron Ceramic D (manufactured by Toagosei Co., Ltd.) was used instead of Aron Ceramic E.

[0063] Example 3 A pellicle was fabricated in the same manner as in Example 1, except that a frame made of an αβ alloy (Ti-6Al-4V) was used instead of glassy carbon and Sumiceram S18 (manufactured by Asahi Chemical Industry Co., Ltd.) was used instead of Aron Ceramic E.

[0064] <Comparative Example 1> A pellicle was fabricated in the same manner as in Example 1, except that a frame made of a β alloy (Ti-15V-3Cr-3Sn-3Al) was used instead of glassy carbon and an epoxy-based adhesive was used instead of the pellicle film adhesive.

[0065] <Comparative Example 2> A pellicle was fabricated in the same manner as in Example 1, except that a frame made of a β alloy (Ti-15V-3Cr-3Sn-3Al) was used instead of glassy carbon and an acrylic urethane adhesive was used instead of the zirconia-based inorganic adhesive.

[0066] [Evaluation of frame properties] The pellicles of the example and comparative example fabricated as described above were evaluated by a heat resistance test.

[0067] <Heat resistance test> The obtained pellicle was attached to a quartz substrate (6025) and stored in an oven at 200°C for 24 hours. After that, the condition of the pellicle was visually checked. Those where the adhesive was not peeled off were marked with a circle, and those where the adhesive was peeled off were marked with an X.

[0068] Table 1 shows the evaluation results of the heat resistance test for the pellicles of the examples and comparative examples.

[0069] [Table 1]

[0070] As is clear from Table 1, the pellicle film adhesive layer has a linear expansion coefficient of 20 × 10 -6In the comparative example using a material with a linear expansion coefficient of 20 × 10 -6 In the examples using a material having a linear expansion coefficient of 0.4 to 2.0, no peeling of the pellicle film was observed even in the heat resistance test. In particular, better results were obtained in the examples in which the ratio of the linear expansion coefficient of the frame to the pellicle film adhesive layer was 0.4 to 2.0.

[0071] Although the embodiment of the present invention has been described above, the present invention is not limited to this and can be modified as appropriate within the scope of the invention. [Industrial Applicability]

[0072] By using the pellicle according to the present invention, peeling of the pellicle film is suppressed even at high temperatures, for example, above 500°C, and the pellicle can be widely used as a pellicle for EUV lithography. [Explanation of symbols]

[0073] 1: Pellicle 2: Frame 3: Pellicle membrane 4: Pellicle membrane adhesive layer 5: Mask adhesive layer 6: Release film

Claims

1. A pellicle comprising: a frame having an opening; a pellicle membrane stretched and supported on one side of the frame so as to cover the opening; and a pellicle membrane adhesive layer that adheres the pellicle membrane to the frame, the frame comprises at least one material selected from the group consisting of titanium, titanium alloy, graphite, carbon nanotubes, carbon fibers, and glassy carbon materials; A pellicle film adhesive layer used in EUV lithography has a linear expansion coefficient of more than 0 and less than 20×10 -6 / K or less.

2. The linear expansion coefficient of the pellicle film adhesive layer is greater than 0 and is 15 × 10 -6 2. The pellicle of claim 1, wherein the pellicle has a viscosity of 1000 MPa or less.

3. The pellicle of claim 1 or 2, wherein the pellicle film adhesive layer comprises an inorganic adhesive.

4. The pellicle of claim 3 , wherein the inorganic adhesive comprises at least one material selected from the group consisting of zirconia, alumina, and silica.

5. A pellicle according to any one of claims 1 to 4, wherein the ratio of the linear expansion coefficients of the frame and the pellicle film adhesive layer (linear expansion coefficient of the frame / linear expansion coefficient of the pellicle film adhesive layer) is 0.4 to 2.

0.

6. 5. The pellicle according to claim 1, wherein the linear expansion coefficient of the pellicle film adhesive layer is equal to or greater than the linear expansion coefficient of the frame.

7. The pellicle according to any one of claims 1 to 6, wherein the thickness of the pellicle film adhesive layer is 0.8 mm to 2.5 mm.

8. The pellicle according to any one of claims 1 to 7, wherein the pellicle membrane includes a carbon membrane.

9. A pellicle membrane adhesive disposed between a frame and a pellicle membrane in a pellicle, The pellicle film adhesive is provided on a pellicle used in EUV lithography and has a linear expansion coefficient of more than 0 and less than 20×10 -6 / K or less.

10. A pellicle-equipped photomask, comprising the pellicle according to any one of claims 1 to 8 attached to the photomask.

11. A method for manufacturing a semiconductor device, comprising a step of exposing using the pellicle-equipped photomask according to claim 10.

12. A method for manufacturing a liquid crystal display panel, comprising a step of exposing using the pellicle-equipped photomask according to claim 10.

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