Substrate holding apparatus, substrate processing apparatus, substrate holding method, substrate processing method, and article manufacturing method

Abstract

To provide a technique advantageous in terms of distortion in a substrate and throughput in a process of causing a chuck to hold the substrate.SOLUTION: A substrate holding apparatus that holds a substrate comprises: a chuck configured to support the substrate; pins configured to protrude from the chuck; and a controller configured to control exhaust from a space between the substrate and the chuck. The controller is configured to control to perform a first exhaust operation of exhausting the gas from the space with a first exhaust pressure, and after the first exhaust operation, perform a second exhaust operation of exhausting the gas from the space with a second exhaust pressure lower than the first exhaust pressure. The second exhaust operation is performed in a period from when a protrusion amount of the pins starts to decrease until when the chuck and the substrate come into contact with each other.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present invention relates to a substrate holding device, a substrate processing apparatus, a substrate holding method, a substrate processing method, and an article manufacturing method. [Background technology]

[0002] In the manufacturing processes of semiconductor devices, liquid crystal display devices, and the like, chucks are used to hold substrates by vacuum suction. When a substrate is held by such a chuck, depending on the strength of the vacuum suction, stress may be applied to the substrate, causing distortion of the substrate. Patent Document 1 discloses a method in which the substrate is clamped to a support structure (chuck) on a substrate table, and after waiting for a certain amount of time, the clamping force of the chuck is temporarily reduced. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-227554 Summary of the Invention [Problem to be solved by the invention]

[0004] In addition to reducing distortion of the substrate, an apparatus having a chuck is required to improve throughput. The method described in Patent Document 1 is disadvantageous in terms of throughput.

[0005] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a technique that is advantageous in terms of substrate distortion and throughput during processing in which a substrate is held by a chuck. [Means for solving the problem]

[0006] In order to achieve the above object, one aspect of the present invention provides a substrate holding device that holds a substrate, comprising a chuck that supports the substrate, pins that protrude from the chuck, and a control unit that controls evacuation of a space between the substrate and the chuck, wherein the control unit controls to perform a first evacuation operation that evacuates the space with a first evacuation pressure, and a second evacuation operation that evacuates the space with a second evacuation pressure that is lower than the first evacuation pressure after the first evacuation operation, and the second evacuation operation is performed between the start of reduction in the protrusion amount of the pins and the contact between the chuck and the substrate.

[0007] Further objects and other aspects of the present invention will become apparent from the following description of preferred embodiments with reference to the accompanying drawings. [Effects of the Invention]

[0008] According to the present invention, for example, it is possible to provide a technique that is advantageous in terms of distortion of a substrate and throughput in a process in which a substrate is held by a chuck. [Brief explanation of the drawings]

[0009] [Figure 1] Schematic diagram showing an example of the configuration of an exposure apparatus (substrate processing apparatus) [Figure 2] Schematic diagram showing an example of the configuration of a substrate transport system [Figure 3] Schematic diagram showing an example of the configuration of a substrate holding unit [Figure 4] Schematic diagram showing an example of the configuration of a substrate holding unit [Figure 5] Schematic diagram showing an example of the configuration of a substrate chuck [Figure 6] FIG. 1 is a diagram for explaining a substrate holding process in the first embodiment; [Figure 7] FIG. 1 is a diagram for explaining a substrate holding process in the first embodiment; [Figure 8] FIG. 10 is a diagram showing an example of an exhaust operation in a substrate mounting process according to the first embodiment. [Figure 9] FIG. 10 is a diagram showing a modified example of the exhaust operation in the substrate mounting process in the first embodiment. [Figure 10] FIG. 10 is a diagram showing an example of an exhaust operation in a substrate mounting process according to the second embodiment. [Figure 11] FIG. 10 is a diagram showing a modified example of the exhaust operation in the substrate mounting process in the second embodiment. [Figure 12] Graph showing the monitoring results of the pressure sensor during the substrate mounting process. [Figure 13] FIG. 10 is a diagram for explaining a substrate holding process in the fourth embodiment. [Figure 14] FIG. 13 is a diagram showing an example of an exhaust operation in a substrate mounting process according to the fourth embodiment. [Figure 15] FIG. 13 is a diagram for explaining a substrate holding process in the fifth embodiment. [Figure 16] FIG. 13 is a diagram showing an example of an exhaust operation in a substrate mounting process according to the fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] In this specification and the accompanying drawings, directions are indicated in an XYZ coordinate system, with the XY plane being a direction parallel to the surface of the chuck that holds the substrate (the substrate holding surface). The directions parallel to the X, Y, and Z axes in the XYZ coordinate system are defined as the X direction, Y direction, and Z direction, respectively, and rotation around the X axis, rotation around the Y axis, and rotation around the Z axis are defined as θX, θY, and θZ, respectively. Control and drive (movement) about the X axis, Y axis, and Z axis refer to control or drive (movement) in the direction parallel to the X axis, direction parallel to the Y axis, and direction parallel to the Z axis, respectively. Furthermore, control or drive about the θX axis, θY axis, and θZ axis refer to control or drive in the direction parallel to the X axis, rotation around the Y axis, and axis parallel to the Z axis, respectively.

[0012] First Embodiment A substrate processing apparatus according to a first embodiment of the present invention will be described. In this embodiment, an exposure apparatus, which is one type of lithography apparatus used to manufacture semiconductor devices, liquid crystal display devices, etc., will be described as an example of a substrate processing apparatus for processing substrates. The exposure apparatus is an apparatus that performs exposure processing by exposing a substrate to light using a step-and-scan method or a step-and-repeat method to transfer a pattern from an original onto the substrate.

[0013] Here, the substrate processing apparatus according to the present invention is not limited to an exposure apparatus, and may be another type of lithography apparatus, such as an imprint apparatus or a drawing apparatus. The imprint apparatus is an apparatus that performs an imprint process in which an imprint material supplied onto a substrate is brought into contact with a mold and curing energy is applied to the imprint material, thereby forming a pattern of a cured material onto the substrate, to which the pattern of the mold has been transferred. The drawing apparatus is an apparatus that performs a drawing process in which a pattern (latent image pattern) is formed on the substrate by drawing on the substrate with a charged particle beam (electron beam) or a laser beam. Furthermore, the substrate processing apparatus according to the present invention may be an apparatus other than a lithography apparatus, such as various precision processing apparatuses or various precision measurement apparatuses. The precision processing apparatus is an apparatus that performs a processing process to process a substrate. The precision measurement apparatus is an apparatus that performs a measurement process to measure a substrate.

[0014] 1 is a schematic diagram showing an example configuration of an exposure apparatus 100 of the present embodiment. The exposure apparatus 100 of the present embodiment may include a substrate holding unit 10 that holds a substrate S, a processing unit 20 that processes the substrate S, and a control unit 30. The exposure apparatus 100 may also include an original transport system 40 that transports an original R to the processing unit 20, and a substrate transport system 50 that transports the substrate S to the substrate holding unit 10. Note that a reticle, a mask, or the like may be used as the original R, and a wafer, a glass plate, or the like may be used as the substrate S.

[0015] The substrate holding unit 10 may include a substrate chuck 11, a substrate stage 12, and pins 13. Although the substrate holding unit 10 of the present embodiment is provided with three pins 13, the number of pins 13 is not limited thereto, and four or more pins 13 may be provided.

[0016] The substrate chuck 11 has a holding surface 11a (substrate holding surface) that holds the substrate S, and exhaust holes 11b that exhaust the space above the substrate chuck 11 in order to hold the substrate S by vacuum suction. Note that hereinafter, exhausting the space above the substrate chuck 11 through the exhaust holes 11b may be simply referred to as "exhaust." The detailed configuration of the substrate chuck 11 will be described later.

[0017] The substrate stage 12 is composed of a fine movement stage 12a and a coarse movement stage 12b. The fine movement stage 12a supports the substrate chuck 11 and is movable on the fine movement stage 12b. The substrate stage 12 may include a drive mechanism (e.g., a linear motor) for translating the fine movement stage 12a in the X, Y, and Z directions and for rotationally driving the fine movement stage 12a in the θX, θY, and θZ directions. The coarse movement stage 12b is movable on the base 14. The substrate stage 12 may include a drive mechanism (e.g., a linear motor) for translating the coarse movement stage 12b in the X, Y, and Z directions and for rotationally driving the coarse movement stage 12b in the θX, θY, and θZ directions.

[0018] The pins 13 are components used when the substrate S is transported to the substrate holding unit 10 by a supply hand 51 (described later) and when the substrate S is retrieved from the substrate holding unit 10 by a retrieval hand 52 (described later). The pins 13 extend along the Z direction and are fixed to the coarse movement stage 12b. They are configured to protrude from the holding surface 11a of the substrate chuck 11 and hold the substrate S by vacuum suction. The amount of protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 can be controlled by driving the substrate chuck 11 and the pins 13 relative to each other. In this embodiment, an example is described in which the fine movement stage 12a supporting the substrate chuck 11 is driven in the Z direction relative to the coarse movement stage 12b to drive the substrate chuck 11 and the pins 13 relative to each other. However, this is not limiting. For example, the substrate chuck 11 and the pins 13 may be driven relative to each other by driving the coarse movement stage 12b, to which the pins 13 are fixed, in the Z direction relative to the fine movement stage 12a.

[0019] Here, the position of the substrate stage 12 (fine movement stage 12a) can be measured by a position measurement unit (not shown). The position measurement unit includes, for example, a laser interferometer. In this case, the position measurement unit can measure the position of the substrate stage 12 by irradiating the substrate stage 12 with light and determining the amount of displacement of the substrate stage 12 based on the light reflected by the substrate stage 12. Note that the position measurement unit that measures the position of the substrate stage 12 may include an encoder instead of a laser interferometer. Furthermore, the relative positions of the fine movement stage 12a and the coarse movement stage 12b are measured by, for example, a capacitance sensor, and the position of the coarse movement stage 12b is controlled based on the measurement results so as to follow the position of the fine movement stage 12a. The pin 13 is fixed to the coarse movement stage 12b and therefore moves together with the coarse movement stage 12b.

[0020] The processing unit 20 is a unit that forms a pattern on the substrate S held by the substrate holding unit 10. The processing unit 20 can include an illumination optical system 21, an original stage 22, a projection optical system 23, and a detection unit 24.

[0021] The illumination optical system 21 uses light emitted from a light source (not shown) to illuminate the original R held by the original stage 22. The original stage 22 may include an original chuck that holds the original R by vacuum suction or the like, and an original drive mechanism that drives the original chuck to drive the original R. The original drive mechanism may, for example, translate the original R in the X, Y, and Z directions, or rotate the original R in the θX, θY, and θZ directions. Drive in each direction may be controlled independently. The projection optical system 23 projects an image of the pattern of the original R illuminated by the illumination optical system 21 onto the substrate S held by the substrate holder 10. The detection unit 24 is, for example, an off-axis scope, and detects alignment marks provided on the substrate S.

[0022] Here, the position of the original stage 22 can be measured by a position measurement unit (not shown). The position measurement unit has, for example, a laser interferometer. In this case, the position measurement unit can measure the position of the original stage 22 by irradiating light onto the original stage 22 and determining the amount of displacement of the original stage 22 based on the light reflected by the original stage 22. Note that the position measurement unit of the original stage 22 may have an encoder instead of a laser interferometer.

[0023] The control unit 30 is configured, for example, by a computer (information processing device) having a processor such as a CPU (Central Processing Unit) and memory, and performs overall control of the exposure process by controlling each part of the exposure apparatus 100. The control unit 30 may be configured, for example, by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), or an ASIC (abbreviation for Application Specific Integrated Circuit), or a general-purpose computer with an embedded program, or a combination of all or part of these.

[0024] Furthermore, the control unit 30 of this embodiment has an instruction unit 31, a storage unit 32, and an information processing unit 33. The instruction unit 31 controls each unit of the exposure apparatus 100. The storage unit 32 stores various information and data. The information processing unit 33 calculates target drive positions for the substrate stage 12 and the original stage 22, and executes the exposure sequence and / or the supply and recovery sequence of the substrate S recorded in the storage unit 32 in a predetermined order. Note that, although the example shown in this embodiment shows the control unit 30 having the storage unit 32 and the information processing unit 33, the storage unit 32 and the information processing unit 33 may be provided separately from the control unit 30.

[0025] The original transfer system 40 can include an original hand 41 , an original pre-alignment stage 42 , an original transfer robot 43 , and a storage unit 44 .

[0026] The original transport robot 43 is an articulated robot. The original transport robot 43 has a hand that holds the original R, and can move this hand to any position in the XYZ space. The storage unit 44 is a platform that stores the original R, and the original R that has been transported from outside the apparatus is placed in the storage unit 44. The original R placed in the storage unit 44 is then placed on the original pre-alignment stage 42 by the original transport robot 43, which is also an articulated robot.

[0027] The positional relationship between the original R and the original pre-alignment stage 42 is measured by observing the marks on the original R with a microscope (scope) at the original pre-alignment stage 42. After measurement, the original hand 41 holds the original R on the original pre-alignment stage 42 and moves to a position where it will hand over the original R to the original stage 22. The original hand 41 then moves in the -Z direction to hand over (transport) the original R to the original stage 22. The original stage 22 holds the original R by vacuum suction. The deviations of the original R in the X, Y, and θZ directions relative to the original pre-alignment stage 42 measured by the original pre-alignment stage 42 can be corrected by the position on the original stage 22 to which the original hand 41 transports the original R.

[0028] The substrate transport system 50 may include a supply hand 51 (transport hand), a collection hand 52, a pre-alignment unit 53, a transport robot 54, a temporary placement table 55, and a storage unit 56. Figure 2 is a schematic diagram showing an example of the configuration of the substrate transport system 50.

[0029] The substrate S is stored in a storage unit 56. The transfer robot 54 is an articulated robot. The transfer robot 54 has a hand that holds the substrate S, and can move this hand to any position in the XYZ space. The transfer robot 54 takes the substrate S from the storage unit 56 and places the substrate S on the pre-alignment unit 53. The pre-alignment unit 53 irradiates the peripheral portion of the substrate S with measurement light and measures the reflected light from the peripheral portion with a sensor, thereby measuring the outer position of the substrate S relative to the pre-alignment unit 53.

[0030] The supply hand 51 is a transport mechanism for transferring (transporting) the substrate S from the pre-alignment unit 53 to the substrate holding part 10. The supply hand 51 receives the substrate S from the pre-alignment unit 53, holds it by vacuum suction, and transfers (transports) the substrate S onto the pins 13 protruding from the holding surface 11a of the substrate chuck 11 in the substrate holding part 10.

[0031] The recovery hand 52 is a transport mechanism for transferring (transporting) the substrate S from the substrate holding unit 10 to the temporary storage table 55. The recovery hand 52 receives the substrate S from on top of the pins 13 protruding from the holding surface 11a of the substrate chuck 11 in the substrate holding unit 10, holds it by vacuum suction, and transfers (transports) it to the temporary storage table 55. The temporary storage table 55 is a table on which the substrate S recovered from the substrate holding unit 10 by the recovery hand 52 is temporarily placed. The transport robot 54 holds the substrate S placed on the temporary storage table 55 by the recovery hand 52 and transports it to the storage unit 56.

[0032] Next, the configuration of the substrate holding unit 10 and the substrate holding process (substrate holding method) for holding the substrate S on the substrate chuck 11 will be described. Here, the substrate holding unit 10 (at least the substrate chuck 11 and the pins 13) and the control unit 30 can form a substrate holding device for holding the substrate S. Furthermore, the substrate processing method for processing a substrate in the exposure apparatus 100 (substrate processing apparatus) includes a holding step for holding the substrate S on the substrate chuck 11 using the substrate holding method described below, and a processing step for processing the substrate S held by the substrate chuck 11 in the holding step by the processing unit 20.

[0033] FIG. 3 is a schematic diagram showing an example of the configuration of the substrate holding unit 10. The substrate chuck 11 is configured to hold the substrate S by vacuum suction. Specifically, the substrate chuck 11 is configured to hold the substrate S by evacuating the space above the substrate chuck 11 (i.e., the space between the substrate chuck 11 and the substrate S placed on pins 13 protruding from its holding surface 11a). The substrate chuck 11 is provided with an exhaust hole 11b for evacuating the space above the substrate chuck, and a pipe 61 is connected to the exhaust hole 11b. The substrate chuck 11 is held by a fine movement stage 12a by vacuum suction. The fine movement stage 12a is disposed on a coarse movement stage 12b. A pressure sensor 62, a first exhaust system 63a, and a second exhaust system 63b are provided within the coarse movement stage 12b. The first exhaust system 63a has an electromagnetic valve 64a and a regulator 65a, and the second exhaust system 63b has an electromagnetic valve 64b and a regulator 65b.

[0034] The pipe 61 is connected to a vacuum pump P, which is a negative pressure generating means. The vacuum pump P is arranged outside the coarse movement stage 12b and can be configured as, for example, factory equipment. The pressure sensor 62 monitors (detects) the internal pressure of the pipe 61. The pressure sensor 62 is arranged to detect the internal pressure of the pipe 61 between the portion where the pipe 61 branches off to each exhaust hole 11b of the substrate chuck 11 and the solenoid valves 64a to 64b of each exhaust system 63a to 63b. The pressure sensor 62 may be understood to detect the pressure in the space above the substrate chuck 11.

[0035] The first exhaust system 63a (solenoid valve 64a, regulator 65a) and the second exhaust system 63b (solenoid valve 64b, regulator 65b) are arranged in parallel on the piping 61 between the vacuum pump P and the substrate chuck 11 (exhaust hole 11b). In the first exhaust system 63a, the regulator 65a is a mechanism for adjusting the inside of the piping 61 to a desired vacuum pressure (exhaust pressure) and is configured to be able to arbitrarily set (change) the desired vacuum pressure. The solenoid valve 64a is arranged closer to the substrate chuck 11 than the regulator 65a and is controlled by the control unit 30. The solenoid valve 64a performs ON / OFF control to switch whether or not the vacuum pressure adjusted by the regulator 65a is supplied to the substrate chuck 11 (exhaust hole 11b). Specifically, when the solenoid valve 64a is turned ON, the vacuum pressure adjusted by the regulator 65a is supplied to the substrate chuck 11 (exhaust hole 11b). On the other hand, when the solenoid valve 64a is turned OFF, the vacuum pressure regulated by the regulator 65a is no longer supplied to the substrate chuck 11 (exhaust hole 11b). The configurations of the solenoid valve 64b and the regulator 65b in the second exhaust system 63b are similar to the configurations of the solenoid valve 64a and the regulator 65a in the first exhaust system 63a.

[0036] The vacuum pressures adjusted by the regulators 65a-65b in the first exhaust system 63a and the second exhaust system 63b may be the same or different. For example, the vacuum pressure adjusted by the regulator 65b in the second exhaust system 63b may be lower than the vacuum pressure adjusted by the regulator 65a in the first exhaust system 63a. In other words, the second exhaust system 63b may be configured (set) so that the exhaust capacity through the exhaust holes 11b is lower than that of the first exhaust system 63a.

[0037] 3 has a configuration in which the first exhaust system 63a and the second exhaust system 63b are connected to the substrate chuck 11 via a common pipe 61 (a single-pipe configuration), but the configuration is not limited thereto. For example, as shown in FIG. 4, the substrate holding unit 10 may have a configuration in which the first exhaust system 63a and the second exhaust system 63b are connected to the substrate chuck 11 via separate pipes 61a and 61b (a two-pipe configuration). Specifically, in the substrate holding unit 10 of FIG. 4, the first exhaust system 63a including a solenoid valve 64a and a regulator 65a is disposed on the pipe 61a, and the second exhaust system 63b including a solenoid valve 64b and a regulator 65b is disposed on the pipe 61b. Each of the pipes 61a and 61b is connected to a vacuum pump P. The internal pressure of the pipe 61a is monitored (detected) by a pressure sensor 62a, and the internal pressure of the pipe 61b is monitored (detected) by a pressure sensor 62b.

[0038] 3 and 4, by turning on the solenoid valve 64a and turning off the solenoid valve 64b, only the vacuum pressure adjusted by the regulator 65a of the first exhaust system 63a is supplied to the substrate chuck 11 (exhaust hole 11b) through the pipe 61 (61a). On the other hand, by turning off the solenoid valve 64a and turning on the solenoid valve 64b, only the vacuum pressure adjusted by the regulator 65b of the second exhaust system 63b is supplied to the substrate chuck 11 (exhaust hole 11b) through the pipe 61 (61b). In other words, with the configuration of FIGS. 3 and 4, it is possible to quickly (high-speed) switch the exhaust pressure when exhausting through the exhaust hole 11b simply by controlling the ON / OFF of the solenoid valves 64a and 64b.

[0039] 3 and 4 show a configuration having two exhaust systems 63a-63b, but the present invention is not limited to this and may have a configuration having three or more exhaust systems. Also, while each exhaust system is configured using a combination of a solenoid valve and a regulator, the present invention is not limited to this and may use a servo valve whose opening and closing degree can be freely set, or a proportional solenoid valve whose control is proportional to current. Of course, a combination of these may also be used. For example, one of the multiple exhaust systems may be configured using a combination of a solenoid valve and a regulator, and the other may be configured using a servo valve or a proportional solenoid valve. By combining these elements, the degree of freedom in setting the vacuum pressure (exhaust pressure) can be increased.

[0040] Fig. 5 is a schematic diagram showing an example of the configuration of the substrate chuck 11. Fig. 5(a) shows a view of the substrate chuck 11 as seen from the +Z direction. Fig. 5(b) shows an AA cross-sectional view of the substrate chuck 11 shown in Fig. 5(a).

[0041] The substrate chuck 11 has exhaust holes 11b that exhaust air from the space above the substrate chuck 11 in order to hold the substrate S by vacuum suction, and openings 11c from which the pins 13 protrude. In the example of Fig. 5, twelve exhaust holes 11b are arranged circumferentially, but the number and arrangement of the exhaust holes 11b are not limited to the example of Fig. 5. The number and arrangement of the openings 11c are also not limited to the example of Fig. 5, and can be set appropriately depending on the number and arrangement of the pins 13.

[0042] The substrate chuck 11 is also provided with a plurality of support pins 11d and a seal portion 11e. The support pins 11d are protrusions for supporting the substrate S, and the substrate S is placed on the upper surfaces of the support pins 11d. The upper surfaces of the support pins 11d may be understood as the holding surface 11a of the substrate chuck 11. The seal portion 11e is a member for reducing the intrusion of gas (atmosphere) from the outside and maintaining a vacuum pressure between the substrate S and the substrate chuck 11 when the substrate S is placed on the support pins 11 (i.e., when the substrate S is held by the substrate chuck 11). The seal portion 11e is configured in an annular shape so as to fit along the periphery of the substrate S placed on the support pins 11d, and the height of the upper surface of the seal portion 11e can be configured to be lower than the height of the upper surfaces of the support pins 11d. The substrate chuck 11 may be configured without the seal portion 11e, or may be configured with a plurality of seal portions 11e. That is, the presence or absence, number and arrangement of the seal portions 11e are not limited to those shown in the example of FIG.

[0043] When the substrate chuck 11 configured in this manner holds the substrate S, the first exhaust system 63a or the second exhaust system 63b exhausts air through the exhaust holes 11b, creating a vacuum between the support pins 11d. This allows the substrate chuck 11 to hold the substrate S with a uniform force over the entire substrate S. The seal portion 11e also reduces the intrusion of gas from the outside between the substrate S and the substrate chuck 11, thereby maintaining the vacuum pressure between the substrate S and the substrate chuck 11. Because the upper surfaces of the support pins 11d are higher than the upper surface of the seal portion 11e, the seal portion 11e and the substrate S do not come into contact with each other when the substrate S is held by the substrate chuck 11.

[0044] 6 is a diagram illustrating a substrate holding process in which a substrate S is held on the substrate chuck 11. The substrate holding process includes a substrate mounting process (substrate mounting step) in which the substrate S is placed on the pins 13 protruding from the holding surface 11a of the substrate chuck 11, and then the amount of protrusion of the pins 13 from the holding surface 11a is reduced to mount the substrate S on the substrate chuck 11. FIGS. 6(a) to 6(c) show the substrate mounting process in chronological order. The substrate holding process can be controlled by the control unit 30.

[0045] Here, the pin 13 has an exhaust hole at its tip, and the exhaust hole is connected to a vacuum pump P via a pipe 71. A solenoid valve 74 and a regulator 75 are arranged on the pipe 71 between the vacuum pump P and the pin 13. The regulator 75 is configured to adjust the vacuum pressure to a desired level. The solenoid valve 74 is arranged closer to the pin 13 than the regulator 75, and ON / OFF control is performed by the control unit 30 to switch whether or not the vacuum pressure adjusted by the regulator 75a is supplied to the pin 13. When the solenoid valve 74 is turned ON, the vacuum pressure adjusted by the regulator 75 is supplied to the pin 13. On the other hand, when the solenoid valve 74 is turned OFF, the vacuum pressure adjusted by the regulator 75 is no longer supplied to the pin 13. In addition, a pressure sensor 72 is provided to monitor (detect) the internal pressure of the pipe 71 in order to monitor the pressure between the pin 13 and the substrate S. The pressure sensor 72 is arranged to detect the internal pressure of the pipe 71 on the pin 13 side of the solenoid valve 74. In FIG. 6, the pressure sensor 72, the solenoid valve 74, and the regulator 75 are arranged outside the coarse movement stage 12b, but the present invention is not limited to this and they may be arranged inside the coarse movement stage 12b.

[0046] 6(a) shows a state in which the pins 13 protrude from the holding surface 11a of the substrate chuck 11 as a result of driving the fine movement stage 12a in the -Z direction. When the substrate S is placed (transported) on the pins 13 by the substrate transport system 50, the control unit 30 causes the pins 13 to hold the substrate S by turning on the solenoid valve 74. Then, the control unit 30 drives the fine movement stage 12a in the +Z direction to reduce the amount by which the pins 13 protrude from the holding surface 11a.

[0047] 6(b) and 6(c) show a state in which the amount of protrusion of the pins 13 from the holding surface 11a is reduced by driving the fine movement stage 12a in the +Z direction. As the fine movement stage 12a is driven in the +Z direction, the upper surfaces of the pins 13 become flush with the holding surface 11a of the substrate chuck 11, as shown in FIG. 6(b), and contact between the substrate S and the substrate chuck 11 begins. At this time, the control unit 30 turns off the solenoid valve 74, releasing the pins 13 from holding the substrate S. As the fine movement stage 12a is further driven in the +Z direction, the upper surfaces of the pins 13 become lower than the holding surface 11a of the substrate chuck 11, as shown in FIG. 6(c), and the pins 13 are retracted into the substrate chuck 11. This allows the substrate S to be mounted on the holding surface 11a of the substrate chuck 11. The fine movement stage 12a can move in the Z direction while tilting in accordance with its positional relationship with the three pins 13 in the Z direction. The pin 13 is fixed to a coarse movement stage 12b that is movable in the X and Y directions. The relative position in the Z direction between the fine movement stage 12a and the coarse movement stage 12b, i.e., the amount of protrusion of the pin 13 from the holding surface 11a, can be measured by a sensor such as an interferometer, a capacitance sensor, or an encoder.

[0048] FIG. 6 shows an example in which the substrate S is mounted on the substrate chuck 11 by driving the fine movement stage 12a relative to the coarse movement stage 12b. However, the mounting of the substrate S on the substrate chuck 11 can be achieved by changing the relative position of the substrate chuck 11 and the pins 13 in the Z direction. For example, as shown in FIG. 7, the pins 13 (whole or tip portions) may be driven in the Z direction relative to the substrate chuck 11 (fine movement stage 12a). FIGS. 7(a) to 7(c) show, in time sequence, an example of a substrate mounting process performed by driving the pins 13 in the -Z direction relative to the substrate chuck 11. The relative position of the substrate chuck 11 and the pins 13 in the Z direction can be changed by a drive mechanism that drives the substrate chuck 11 and the pins 13 relative to each other in the Z direction. Note that, hereinafter, driving the tip portions of the pins 13 relative to the substrate chuck 11 may be referred to as driving the pins 13.

[0049] FIG. 7(a) shows a state in which the pins 13 are protruding from the holding surface 11a of the substrate chuck 11 after being driven in the +Z direction. When the substrate S is placed (transported) on the pins 13 by the substrate transport system 50, the control unit 30 turns on the solenoid valve 74 to cause the pins 13 to hold the substrate S. Then, the control unit 30 drives the pins 13 in the -Z direction to reduce the amount of protrusion of the pins 13 from the holding surface 11a. As the pins 13 are driven in the -Z direction, as shown in FIG. 7(b), the upper surfaces of the pins 13 become flush with the holding surface 11a of the substrate chuck 11, and contact between the substrate S and the substrate chuck 11 begins. At this time, the control unit 30 turns off the solenoid valve 74 to release the pins 13 from holding the substrate S. Then, when the pin 13 is further driven in the -Z direction, the upper surface of the pin 13 becomes lower than the holding surface 11a of the substrate chuck 11, as shown in FIG. 7(c), and the pin 13 is stored in the substrate chuck 11. This allows the substrate S to be mounted on the holding surface 11a of the substrate chuck 11. Note that while FIG. 7 shows an example in which the tip of the pin 13 is driven in the -Z direction, the entire pin 13 may also be driven in the -Z direction. Furthermore, the drive mechanism for driving the pin 13 may be provided in the pin 13 itself, or may be provided outside the pin 13 (for example, on the coarse movement stage 12b).

[0050] Incidentally, when reducing the amount of protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 during the substrate mounting process, it is desirable from the perspective of the throughput (productivity) of the exposure apparatus 100 that the relative speed between the substrate chuck 11 and the pins 13 in the Z direction be as fast as possible. However, if the relative speed between the substrate chuck 11 and the pins 13 in the Z direction is fast, the gap between the holding surface 11a of the substrate chuck 11 and the substrate S also narrows quickly, and the air pressure in the space between the holding surface 11a and the substrate S increases. In this case, the air pressure in the space increases, and the substrate S may slide (shift) on the pins 13. If the substrate S slides on the pins, the substrate S may fall off the pins 13 or the pins 13 may wear out. Furthermore, when the substrate S is mounted on the substrate chuck 11, the multiple support pins 11d of the substrate chuck 11 may wear out. Therefore, it is preferable to exhaust air through the exhaust holes 11b of the substrate chuck 11 during the period from when the protrusion of the pins 13 from the holding surface 11a starts to decrease until when the holding surface 11a starts to come into contact with the substrate S. The exhaust pressure at this time is preferably set so as to reduce the lateral sliding of the substrate S on the pins 13.

[0051] On the other hand, if exhaust is performed through the exhaust holes 11b with an exhaust pressure that can reduce the lateral sliding of the substrate S on the pins 13, distortion will occur in the substrate S when the holding surface 11a of the substrate chuck 11 starts to contact the substrate S. In other words, the substrate S will be held by the substrate chuck 11 in a state in which distortion has occurred in the substrate S. Furthermore, a large frictional force will occur at the contact surface between the holding surface 11a and the substrate S, which may cause wear of the substrate chuck 11. Therefore, it is advisable to reduce the exhaust pressure when the holding surface 11a of the substrate chuck 11 starts to contact the substrate S.

[0052] Therefore, the substrate mounting process of this embodiment includes a first evacuation operation and a second evacuation operation performed after the first evacuation operation. The first evacuation operation is an evacuation operation in which the space above the substrate chuck 11 is evacuated through the exhaust holes 11b with an exhaust pressure of a first set value. The second evacuation operation is an evacuation operation in which the space above the substrate chuck 11 is evacuated through the exhaust holes 11b with an exhaust pressure of a second set value that is smaller than the first set value. The switching from the first evacuation operation to the second evacuation operation is performed during the period from when the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 starts to decrease until the holding surface 11a starts to contact the substrate S. This makes it possible to achieve both a reduction in distortion of the substrate S when the substrate S is held by the substrate chuck 11 and an improvement in throughput.

[0053] In the substrate mounting process, there are two states: one in which there is a gap between the substrate chuck 11 and the substrate S, and the other in which the substrate chuck 11 and the substrate S are in contact with each other. In this embodiment, switching from the first exhaust operation to the second exhaust operation is performed when or before the substrate chuck 11 and the substrate S start to come into contact with each other. The exhaust pressure refers to the pressure at which the space above the substrate chuck 11 is exhausted (intaken) through the exhaust holes 11b, and may be understood as the flow rate or flow velocity of the gas exhausted from the space through the exhaust holes 11b. The exhaust pressure is determined by the values ​​(flow rate, flow velocity) set in the regulator 65a of the first exhaust system 63a and the regulator 65b of the second exhaust system 63b.

[0054] 8 shows an example of the first and second evacuation operations in the substrate mounting process. In FIG. 8, the horizontal axis represents the Z-direction position of the fine movement stage 12a, and the vertical axis represents the evacuation pressure. The "Z-direction position of the fine movement stage 12a" shown on the horizontal axis of FIG. 8 may be understood as the position of the holding surface 11a of the substrate chuck 11 in the Z direction. The horizontal axis of FIG. 8 may also be understood as the amount of protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 in the Z direction, or the distance between the holding surface 11a and the substrate S.

[0055] In the substrate mounting process, the first exhaust operation is initiated when the fine movement stage 12a starts to be driven in the +Z direction, i.e., when the protrusion of the pins 13 from the holding surface 11a starts to decrease. In the first exhaust operation, exhaust is performed at an exhaust pressure of a first set value so as to reduce the sideways sliding of the substrate S on the pins 13 due to the wind pressure generated by the high-speed movement of the fine movement stage 12a. The first set value is set to a value that allows the sideways sliding (shift amount) of the substrate S on the pins 13 to fall within an allowable range during the period from when the protrusion of the pins 13 starts to decrease until the substrate S starts to come into contact with the holding surface 11a of the substrate chuck 11. This reduces the sideways sliding of the substrate S on the pins 13.

[0056] The exhaust volume in the first exhaust operation (the flow rate of gas exhausted through the exhaust holes 11b) is preferably equal to or greater than the flow rate of gas pushed out from the space above the substrate chuck 11 by driving the fine movement stage 12a in the +Z direction (hereinafter, sometimes referred to as the gas extrusion volume). However, depending on the arrangement of the piping system within the apparatus, it may be difficult to set the exhaust volume in the first exhaust operation to be greater than the gas extrusion volume. In this case, the exhaust volume in the first exhaust operation should be set taking into consideration the holding of the substrate S by the pins 13. For example, since the substrate S is vacuum-sucked by the pins 13, if the exhaust volume in the first exhaust operation is greater than or equal to the value obtained by subtracting the vacuum suction volume of the substrate S by the pins 13 from the gas extrusion volume, it is possible to reduce lateral sliding of the substrate S on the pins 13.

[0057] Next, the second evacuation operation is started when the Z-direction position of the fine movement stage 12a reaches the first position. That is, the first evacuation operation is switched to the second evacuation operation at this timing. In the second evacuation operation, evacuation is performed at an evacuation pressure of a second set value that is smaller than the first set value so as to reduce distortion of the substrate S caused by holding the substrate S by the substrate chuck 11. The second set value is set to a value that allows the amount of distortion of the substrate S caused by holding the substrate S by the substrate chuck 11 to fall within an allowable range. This makes it possible to reduce distortion of the substrate S caused by holding the substrate S by the substrate chuck 11. Furthermore, by providing the second evacuation operation, the frictional force between the holding surface 11a of the substrate chuck 11 and the substrate S can be reduced, thereby reducing wear on the substrate chuck 11.

[0058] The first position is defined as the Z direction position of the fine movement stage 12a when contact between the holding surface 11a and the substrate S begins, or a position on the −Z direction side thereof, and is obtained in advance by experiment, simulation, etc., and stored in the control unit 30 (storage unit 32). In the example of Fig. 8, the first position is defined as the Z direction position of the fine movement stage 12a when contact between the holding surface 11a and the substrate S begins.

[0059] While FIG. 8 shows an example in which fine movement stage 12a is driven in the +Z direction during the substrate mounting process, the same applies when driving pins 13 in the -Z direction. Because the driving directions are opposite when driving fine movement stage 12a and when driving pins 13, the +Z direction in FIG. 8 can be replaced with the -Z direction when driving pins 13 in the -Z direction. In the following figures and explanations, an example of driving fine movement stage 12a is shown, but when driving pins 13, the +Z direction can be replaced with the -Z direction. In the explanations regarding FIG. 8 and the following figures, the driving of fine movement stage 12a can be considered as the movement of substrate chuck 11, and can also be replaced with the driving of pins 13 or the relative driving of fine movement stage 12a and pins 13.

[0060] The exhaust pressure through the exhaust hole 11b can be determined based on the speed of the fine movement stage 12a, the suction holding force of the pins 13 on the substrate S, and / or the characteristics of the substrate S. The speed of the fine movement stage 12a tends to be increased when throughput is taken into consideration. When driving at high speed, it is advisable to set the exhaust pressure in the first exhaust operation high. The suction holding force of the pins 13 refers to the vacuum pressure when the pins 13 hold the substrate S by vacuum suction. If the vacuum pressure is low, the wind pressure generated during driving of the fine movement stage 12a may cause the substrate S to slide sideways on the pins 13. Therefore, it is advisable to set the exhaust pressure in the first exhaust operation high. The characteristics of the substrate S may include the amount of warpage, the roughness of the back surface, the type, material, and / or thickness of the film to be formed. The exhaust pressure in the second exhaust operation can be appropriately set according to the characteristics of the substrate S. For example, if the substrate S is warped, it is advisable to set the exhaust pressure in the second exhaust operation high. Note that the exhaust pressure in the second exhaust operation may also be set taking into consideration the characteristics of the substrate chuck 11. The characteristics of the substrate chuck 11 may include the uniformity of the heights of the multiple support pins 11d and / or the presence or absence of a seal portion 11e. For example, if the seal portion 11e is not provided on the holding surface 11a of the substrate chuck 11, the amount of ambient air flowing in increases, so it is advisable to set the exhaust pressure in the second exhaust operation to be high.

[0061] In the substrate mounting process of this embodiment, the example in which the first evacuation operation is switched to the second evacuation operation while the fine movement stage 12a is moving has been described. However, this is not limiting. For example, the first evacuation operation may be performed while the fine movement stage 12a is moving, and the movement of the fine movement stage 12a may be temporarily stopped when the Z-direction position of the fine movement stage 12a reaches the first position, and the first evacuation operation may be switched to the second evacuation operation in this state. That is, the first evacuation operation may be switched to the second evacuation operation while the reduction in the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 is temporarily stopped. During the substrate mounting process, the movement speed of the fine movement stage 12a can be freely changed or temporarily stopped. The movement of the fine movement stage 12a may be temporarily stopped before the holding surface 11a of the substrate chuck 11 and the substrate S begin to contact each other. By temporarily stopping the movement of the fine movement stage 12a before the contact between the substrate chuck 11 and the substrate S begins, distortion of the substrate S caused by the substrate chuck 11 holding the substrate S can be more reliably reduced.

[0062] The movement speed and movement pattern of the fine movement stage 12a can be freely set. Whether or not a pause is performed, it is possible to reduce the lateral slippage of the substrate S on the pins 13 and reduce distortion of the substrate S that occurs when the substrate chuck 11 and the substrate S start to come into contact with each other. In this embodiment, the exhaust pressure is switched in two stages: the first exhaust operation and the second exhaust operation. However, the switching of the exhaust pressure is not limited to two stages and may be three or more stages. While the example of changing the exhaust pressure in stages (discretely) has been described in this embodiment, the exhaust pressure may be changed continuously. That is, the exhaust pressure may be changed so as to change gradually from the first exhaust pressure (first set value) to the second exhaust pressure (second set value). The continuous change in the exhaust pressure may be performed based on, for example, a predetermined graph or table showing the relationship between the exhaust pressure and time, or based on a specific function.

[0063] Next, a method for switching from the first exhaust operation to the second exhaust operation in the substrate mounting process will be described. As described above with reference to Figures 3 and 4, the substrate holding device of this embodiment is provided with a first exhaust system 63a including a solenoid valve 64a and a regulator 65a, and a second exhaust system 63a including a solenoid valve 64a and a regulator 65a.

[0064] For example, the first exhaust operation is performed with both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b turned on. Then, when the Z-axis position of the fine movement stage 12a reaches the first position, the solenoid valve 64b of the second exhaust system 63b is turned off, and the second exhaust operation is performed with only the solenoid valve 64a of the first exhaust system 63a turned on. Alternatively, the solenoid valve 64a of the first exhaust system 63a is turned off at this timing, and the second exhaust operation is performed with only the solenoid valve 64b of the second exhaust system 63b turned on. This allows the exhaust pressure setting value (second setting value) for the second exhaust operation to be smaller than the exhaust pressure setting value (first setting value) for the first exhaust operation. Turning off one of the solenoid valves 64a-64b while both are turned on in this way has the advantage of enabling a smooth switch from the first exhaust operation to the second exhaust operation.

[0065] The vacuum pressure in each of the regulators 65a to 65b can be set according to a first set value and a second set value. For example, if the exhaust pressure of the second set value is to be approximately half of the exhaust pressure of the first set value, the vacuum pressures in the regulators 65a to 65b can be set to the same value, or the vacuum pressure can be set taking into account the length of the piping 61. If the length of the piping 61 is taken into account, the vacuum pressure in the regulators 65a to 65b can be set by comparing the exhaust pressure when the solenoid valves 64a to 64b are turned ON with the exhaust pressure when the solenoid valve 64a is turned ON and the solenoid valve 64b is turned OFF. In this way, the first set value and the second set value can be determined according to the exhaust pressure required for each exhaust operation.

[0066] Furthermore, if the vacuum pressure adjusted by the regulator 65b of the second exhaust system 63b is lower than the vacuum pressure adjusted by the regulator 65a of the first exhaust system 63a, the exhaust system used in the first and second exhaust operations may be switched. Specifically, in the first exhaust operation, the solenoid valve 64a of the first exhaust system 63a is turned ON and the solenoid valve 64b of the second exhaust system 63b is turned OFF. That is, the first exhaust operation is performed using only the first exhaust system 63a. Then, when the Z direction position of the fine movement stage 12a reaches the first position, the solenoid valve 64a of the first exhaust system 63a is turned OFF and the solenoid valve 64b of the second exhaust system 63b is turned ON, and the second exhaust operation is performed in this state. That is, the second exhaust operation is performed using only the second exhaust system 63b.

[0067] The above has described the setting of exhaust pressure using a combination of solenoid valves 64a-64b and regulators 65a-65b, but the same applies when a servo valve or proportional solenoid valve is used instead. Servo valves and proportional solenoid valves have the advantage that their opening and closing degrees can be freely set, thereby reducing the number of piping systems and simplifying the components of the device. Furthermore, in the configuration of Figure 3, a servo valve may be used instead of solenoid valve 64b and regulator 65b. In this case, there is the advantage that the opening and closing degree of the servo valve can be changed depending on the characteristics of the substrate S, such as the amount of warping of the substrate S.

[0068] As described above, in the substrate holding process (substrate mounting process) of this embodiment, the first exhaust operation is switched to the second exhaust operation during the period from when the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 starts to decrease until the holding surface 11a and the substrate S start to contact each other. The first exhaust operation reduces the lateral sliding of the substrate S on the pins 13, so the substrate mounting process can be performed without slowing down the rate at which the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 decreases, which can be advantageous in terms of throughput. The second exhaust operation can reduce distortion of the substrate S that occurs when the substrate S contacts the holding surface 11a of the substrate chuck 11. Furthermore, the switching from the first exhaust operation to the second exhaust operation is performed at the time when or before the contact between the holding surface 11a and the substrate S starts, which can be advantageous in terms of throughput. In other words, the substrate mounting process of this embodiment is advantageous in terms of distortion of the substrate S and throughput during the substrate holding process.

[0069] [Variations] 8, the first position is the Z direction position of the fine movement stage 12a at the start of contact between the holding surface 11a and the substrate S. However, the first position can also be the Z direction position of the fine movement stage 12a before the start of contact between the holding surface 11a and the substrate S (for example, immediately before the start of contact between the holding surface 11a and the substrate S).

[0070] 9 shows a modified example of the first and second evacuation operations in the substrate mounting process. In the example of FIG. 9, the first position is defined as the Z-direction position of the fine movement stage 12a immediately before contact between the holding surface 11a and the substrate S begins, and the Z-direction position of the fine movement stage 12a at the time when contact between the holding surface 11a and the substrate S begins is shown after the first position. That is, in the example of FIG. 9, the first evacuation operation is switched to the second evacuation operation at a timing before contact between the holding surface 11a of the substrate chuck 11 and the substrate S begins. As a result, the switching from the first evacuation operation to the second evacuation operation is performed with a gap between the substrate chuck 11 and the substrate S, so that distortion of the substrate S caused by holding the substrate S by the substrate chuck 11 can be more reliably reduced.

[0071] Second Embodiment A second embodiment of the present invention will be described. In the above first embodiment, an example was described in which the exhaust pressure was switched in two stages, the first exhaust operation and the second exhaust operation, during the substrate mounting process. In this embodiment, an example is described in which the third exhaust operation is further performed after the second exhaust operation during the substrate mounting process, and the exhaust pressure is switched in three stages. Note that this embodiment basically follows the first embodiment, and can follow the first embodiment except for the matters mentioned below.

[0072] 10 shows an example of the exhaust operation of the substrate mounting process of this embodiment. In FIG. 10, the horizontal axis represents the Z-direction position of the fine movement stage 12a, and the vertical axis represents the exhaust pressure. The substrate mounting process of this embodiment further includes, after the second exhaust operation, a third exhaust operation in which the space above the substrate chuck 11 is evacuated with an exhaust pressure of a third set value that is greater than the second set value.

[0073] 10, in the substrate mounting process of this embodiment, when the fine movement stage 12a starts to be driven in the +Z direction, i.e., when the protrusion of the pins 13 from the holding surface 11a starts to decrease, a first evacuation operation is started, in which evacuation is performed at an evacuation pressure of a first set value. Then, when the Z direction position of the fine movement stage 12a reaches the first position, a second evacuation operation is started, in which evacuation is performed at an evacuation pressure of a second set value that is smaller than the first set value. In other words, at this timing, the first evacuation operation is switched to the second evacuation operation. The first position can be defined as the Z direction position of the fine movement stage 12a when contact between the holding surface 11a and the substrate S begins.

[0074] Furthermore, in the substrate mounting process of this embodiment, when the Z direction position of the fine movement stage 12a reaches the second position, a third exhaust operation is initiated. The third exhaust operation performs exhaust at an exhaust pressure of a third set value, which is greater than the second set value. That is, the second exhaust operation is switched to the third exhaust operation at this timing. The third set value is an exhaust pressure setting for the substrate chuck 11 to hold the substrate S by vacuum suction, and can be set to a value greater than the second set value. In this embodiment, the third set value is the same as the first set value, but can be equal to or less than the first set value (i.e., the third exhaust pressure can be equal to or less than the first exhaust pressure). The second position is defined as the Z direction position of the fine movement stage 12a after contact between the holding surface 11a and the substrate S begins, and is stored in the predetermined memory unit 32. This third exhaust operation can shorten the time it takes to create a vacuum between the substrate chuck 11 and the substrate S and hold the substrate S by the substrate chuck 11, which can be advantageous in terms of throughput.

[0075] Next, a method for switching exhaust operations in the substrate mounting process will be described. As described above with reference to Figures 3 and 4, the substrate holding device of this embodiment is provided with a first exhaust system 63a including a solenoid valve 64a and a regulator 65a, and a second exhaust system 63a including a solenoid valve 64a and a regulator 65a.

[0076] For example, a first exhaust operation is performed with both the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b turned on. Then, when the Z direction position of the fine movement stage 12a reaches the first position, the solenoid valve 64b of the second exhaust system 63b is turned off, and a second exhaust operation is performed with only the solenoid valve 64a of the first exhaust system 63a turned on. Alternatively, at this timing, the solenoid valve 64a of the first exhaust system 63a is turned off, and the second exhaust operation is performed with only the solenoid valve 64b of the second exhaust system 63b turned on. This allows the set value of the exhaust pressure in the second exhaust operation (second set value) to be smaller than the set value of the exhaust pressure in the first exhaust operation (first set value).

[0077] Furthermore, when the Z-axis position of the fine movement stage 12a reaches the second position, the solenoid valve 64a of the first exhaust system 63a is turned on, and the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b are both turned on, and a third exhaust operation is performed. In this case, the first set value and the third set value are the same pressure value. Setting the first set value and the third set value to be the same has the advantage of improving throughput without increasing the number of piping systems. However, this is not limited to this, and the first set value and the third set value may be different from each other. In this case, it is preferable to provide a third exhaust system in addition to the first exhaust system 63a and the second exhaust system 63b (a three-system piping configuration). By controlling the ON / OFF of the three solenoid valves provided in the three-system piping configuration, the first set value, the second set value, and the third set value can be different from each other. For example, all three solenoid valves are turned on in the first exhaust operation, only one solenoid valve is turned on in the second exhaust operation, and only two solenoid valves are turned on in the third exhaust operation.Of course, the solenoid valves and regulators may be replaced with servo valves or proportional solenoid valves without adding piping.By changing the opening and closing degree between the first and third exhaust operations, the exhaust pressure in each exhaust operation can be changed.

[0078] In the substrate mounting process of this embodiment, the evacuation operation is switched while the fine movement stage 12a is being moved. However, this is not limiting. For example, the first evacuation operation may be performed while the fine movement stage 12a is being moved, and the movement of the fine movement stage 12a may be temporarily stopped when the Z direction position of the fine movement stage 12a reaches the first position, and the first evacuation operation may be switched to the second evacuation operation in this state. That is, the first evacuation operation may be switched to the second evacuation operation in a state where the reduction in the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 is temporarily stopped. Furthermore, after the second evacuation operation is started, the movement of the fine movement stage 12a is started again. Then, the movement of the fine movement stage 12a may be temporarily stopped when the Z direction position of the fine movement stage 12a reaches the second position, and the second evacuation operation may be switched to the third evacuation operation in this state.

[0079] Furthermore, in the substrate mounting process of this embodiment, the movement speed of the fine movement stage 12a may be changed. In the first evacuation operation, the movement speed of the fine movement stage 12a is increased to improve throughput. In the second evacuation operation, the movement speed of the fine movement stage 12a is decreased compared to the first evacuation operation to reduce distortion of the substrate S caused by holding the substrate S by the substrate chuck 11. Then, in the third evacuation operation, the movement speed of the fine movement stage 12a is increased compared to the second evacuation operation to quickly retract the pins 13 into the substrate chuck 11. By gradually changing the movement speed of the fine movement stage 12a in this manner, distortion of the substrate S caused by holding the substrate S by the substrate chuck 11 can be more reliably reduced and may also be advantageous in terms of throughput.

[0080] As described above, in the substrate mounting process of this embodiment, the third exhaust operation, in which exhaust is performed at an exhaust pressure of a third set value greater than the second set value, is performed after the second exhaust operation. This can shorten the time required to create a vacuum between the substrate chuck 11 and the substrate S and hold the substrate S by the substrate chuck 11, which can be advantageous in terms of throughput.

[0081] [Variations] 10, the first position is the position of the fine movement stage 12a in the Z direction when the holding surface 11a starts to come into contact with the substrate S. However, the first position can also be the position of the fine movement stage 12a in the Z direction before the holding surface 11a starts to come into contact with the substrate S (for example, immediately before the holding surface 11a starts to come into contact with the substrate S).

[0082] 11 shows a modified example of the evacuation operation in the substrate mounting process. In the example of FIG. 11, the first position is defined as the Z direction position of the fine movement stage 12a immediately before contact between the holding surface 11a and the substrate S begins, and the Z direction position of the fine movement stage 12a at the time when contact between the holding surface 11a and the substrate S begins is shown after the first position. That is, in the example of FIG. 9, the first evacuation operation is switched to the second evacuation operation at a timing before contact between the holding surface 11a of the substrate chuck 11 and the substrate S begins. As a result, the switching from the first evacuation operation to the second evacuation operation is performed with a gap between the substrate chuck 11 and the substrate S, so that distortion of the substrate S caused by holding the substrate S by the substrate chuck 11 can be more reliably reduced.

[0083] 11, the second position is shown after the Z direction position of the fine movement stage 12a when contact between the holding surface 11a and the substrate S begins. That is, in the example of FIG. 11, the second evacuation operation is switched to the third evacuation operation at the timing after contact between the holding surface 11a of the substrate chuck 11 and the substrate S begins. In this case, the second position may be understood as the Z direction position of the fine movement stage 12a when the upper surfaces of the pins 13 are lower than the holding surface of the substrate chuck 11. This can shorten the time required to create a vacuum between the substrate chuck 11 and the substrate S and hold the substrate S by the substrate chuck 11, which can be advantageous in terms of throughput.

[0084] <Third embodiment> A third embodiment of the present invention will be described. In this embodiment, an example will be described in which the exhaust operation is switched based on the monitoring result (detection result) of the pressure sensor 62. That is, in this embodiment, the exhaust operation is switched when the internal pressure of the pipe 61 monitored (detected) by the pressure sensor 62 reaches a pressure threshold. The internal pressure of the pipe 61 may be understood as the exhaust pressure via the exhaust hole 11b. Note that this embodiment basically inherits the first embodiment, and may follow the first embodiment except for the matters mentioned below. Furthermore, in this embodiment, the second embodiment in which a third exhaust operation is further performed may be applied, and an example in which the second embodiment is applied will be described below.

[0085] Fig. 12 shows the monitoring results of the pressure sensor 62 during the substrate mounting process. In Fig. 12, the horizontal axis represents the Z direction position of the fine movement stage 12a, and the vertical axis represents the exhaust pressure (internal pressure of the pipe 61) detected by the pressure sensor 62.

[0086] In the substrate mounting process, when the amount of protrusion of the pins 13 from the holding surface 11a of the substrate chuck 11 decreases and the gap between the substrate chuck 11 and the substrate S in the Z direction narrows, the amount of gas flowing from the outside into the space between the substrate chuck 11 and the substrate S decreases. As a result, the pressure in the space gradually decreases. In this embodiment, the exhaust pressure detected by the pressure sensor 62 is equal to or lower than the first pressure threshold P TH1 When the exhaust pressure detected by the pressure sensor 62 reaches the second pressure threshold P TH2 When the first pressure threshold P is reached, the second exhaust operation is switched to the third exhaust operation. TH1 and the second pressure threshold P TH2 The second pressure threshold P can be set in advance through experiments, simulations, etc. TH2 is the first pressure threshold P TH1 is set to a value smaller than

[0087] Depending on the responsiveness of the pressure sensor 62, there is a concern that even if switching is performed based on real-time results, the substrate S may be sucked and distorted with the exhaust pressure of the first set value. TH1 and the second pressure threshold P TH2 is set in advance. Then, when the exhaust pressure detected by the pressure sensor 62 exceeds the first pressure threshold P TH1 When the exhaust pressure detected by the pressure sensor 62 reaches the second pressure threshold P TH2The first exhaust operation is switched to the second exhaust operation when the pressure reaches the pressure sensor 62. By determining the timing to switch the exhaust operation using the monitoring result (detection result) of the pressure sensor 62 in this manner, it is possible to reduce the sliding of the substrate S on the pins 13 and the distortion of the substrate S when the substrate S is held by the substrate chuck 11.

[0088] First pressure threshold P TH1 The first pressure threshold P can be determined by measuring in advance the relationship between the timing of switching the exhaust pressure from the first set value to the second set value and the amount of lateral slippage of the substrate S on the pins 13, and based on that relationship, to a value that can reduce lateral slippage of the substrate S. TH1 may be determined using a simulation. PTH2 The second pressure threshold P can be determined by measuring in advance the relationship between the timing of switching the exhaust pressure from the second set value to the third set value and the amount of distortion of the substrate S, and based on that relationship, to be a value that can reduce distortion of the substrate S. TH2 may be determined using simulation.

[0089] [Variations] 12, the timing for switching the exhaust operation is determined based on the monitoring results of the pressure sensor 62. However, instead of the pressure sensor 62, a flow rate sensor may be provided that monitors (detects) the flow rate of the gas flowing inside the pipe 61, and the exhaust operation may be switched based on the monitoring results (detection results) of the flow rate sensor. Specifically, the first exhaust operation is switched to the second exhaust operation when the flow rate monitored (detected) by the flow rate sensor reaches a first flow rate threshold, and the second exhaust operation is switched to the third exhaust operation when the flow rate monitored (detected) by the flow rate sensor reaches a second flow rate threshold. The flow rate of the gas flowing inside the pipe 61 may be understood as the exhaust flow rate through the exhaust hole 11b. The first flow rate threshold and the second flow rate threshold are determined based on the first pressure threshold P TH1 and the second pressure threshold P TH2 Similarly, the second flow rate threshold can be set in advance through experiments, simulations, etc. The second flow rate threshold is set to a value smaller than the first flow rate threshold.

[0090] <Fourth embodiment> A fourth embodiment of the present invention will be described. In the above first embodiment, an example was described in which the first evacuation operation is switched to the second evacuation operation during the period from when the protrusion amount of the pins 13 from the holding surface 11a of the substrate chuck 11 starts to decrease until the holding surface 11a starts to come into contact with the substrate S. In this embodiment, an example is described in which the first evacuation operation is switched to the second evacuation operation in a state in which the substrate S has already been placed (mounted) on the holding surface 11a of the substrate chuck 11. Note that this embodiment basically inherits the first embodiment and can follow the first embodiment except for the matters mentioned below. In addition, the second embodiment and / or the third embodiment may be applied to this embodiment.

[0091] This embodiment, in which the first evacuation operation is switched to the second evacuation operation while the substrate S is already placed (mounted) on the holding surface 11a of the substrate chuck 11, is particularly effective when a warped substrate S is held by the substrate chuck 11. FIG. 13 is a diagram for explaining the substrate holding process for holding a warped substrate S on the substrate chuck 11. FIGS. 13(a) to 13(c) show the substrate holding process of this embodiment in chronological order. The substrate holding process can be controlled by the control unit 30.

[0092] 13(a) shows a state in which a warped substrate S is placed on the holding surface 11a of the substrate chuck 11. In this state, the peripheral portion (outer periphery) of the substrate S placed (placed) on the substrate chuck 11 (holding surface 11a) is separated from the substrate chuck 11. In this state (i.e., when the outer periphery of the substrate S is not in contact with the substrate chuck 11), a first evacuation operation is started. This reduces the air pressure in the space between the substrate chuck 11 and the substrate S, and the warpage of the substrate S is gradually corrected.

[0093] 13(b) to (c) show a state in which the warpage of the substrate S is gradually corrected. In this embodiment, the first evacuation operation is switched to the second evacuation operation before (for example, just before) the state of FIG. 13(b), i.e., before the entire area of ​​the substrate S comes into contact with the substrate chuck 11 (holding surface 11a). This makes it possible to reduce distortion of the substrate S that occurs when the substrate S is held by the substrate chuck 11. Alternatively, the second evacuation operation may be switched to the third evacuation operation after the entire area of ​​the substrate S comes into contact with the substrate chuck 11 (holding surface 11a).

[0094] Here, with reference to FIG. 3, a configuration example of the substrate holding unit 10 for holding the substrate S placed on the substrate chuck 11 will be described. In this embodiment, with the substrate S placed on the holding surface 11a of the substrate chuck 11, switching is performed from the first exhaust operation (exhaust pressure of a first set value) to the second exhaust operation (exhaust pressure of a second set value). As in the first embodiment, switching from the first exhaust operation to the second exhaust operation can be performed by ON / OFF control of the solenoid valve 64a of the first exhaust system 63a and the solenoid valve 64b of the second exhaust system 63b. Even when switching from the first exhaust operation to the second exhaust operation with the substrate S already placed on the holding surface 11a of the substrate chuck 11, distortion of the substrate S that occurs when the substrate S is held by the substrate chuck 11 can be reduced.

[0095] The timing of switching from the first exhaust operation to the second exhaust operation can be determined based on the monitoring results of the pressure sensor 62, as in the third embodiment. For example, when the substrate chuck 11 starts to come into contact with the substrate S, the exhaust pressure (internal pressure of the piping 61) changes suddenly. Therefore, depending on the responsiveness of the pressure sensor 62, even if switching is performed based on the real-time results, there is a concern that the substrate S may be held at a high exhaust pressure and distorted. Therefore, in this embodiment, as shown in FIG. 14, a first pressure threshold P TH1 is set in advance, and the exhaust pressure detected by the pressure sensor 62 is equal to or exceeds the first pressure threshold P TH1The first exhaust operation is switched to the second exhaust operation when the first pressure threshold P is reached. By determining the timing to switch from the first exhaust operation to the second exhaust operation based on the monitoring result of the pressure sensor 62 in this manner, it is possible to reduce distortion of the substrate S that occurs when the substrate S is held by the substrate chuck 11. TH1 The first pressure threshold P can be determined to be a value that can reduce the distortion of the substrate S based on a relationship between the timing of switching the exhaust pressure from the first set value to the second set value and the amount of distortion of the substrate S, which is measured in advance. TH1 may be determined using simulation.

[0096] In this embodiment, as described in the modified example of the third embodiment, a flow rate sensor that monitors (detects) the flow rate of gas flowing inside the pipe 61 may be provided instead of the pressure sensor 62, and the exhaust operation may be switched based on the monitoring result (detection result) of the flow rate sensor. Furthermore, in this embodiment, an example in which the exhaust pressure is switched in two stages, the first exhaust operation and the second exhaust operation, has been described, but as described in the second embodiment, the exhaust pressure may be switched in three stages by further performing a third exhaust operation after performing the second exhaust operation.

[0097] As described above, in the substrate holding process of this embodiment, the first evacuation operation is started when the peripheral portion of the substrate S placed on the substrate chuck 11 is separated from the substrate chuck 11, and the first evacuation operation is switched to the second evacuation operation before the entire area of ​​the substrate S comes into contact with the substrate chuck 11. This can reduce distortion of the substrate S that occurs when the substrate S is held on the substrate chuck 11. Furthermore, this can be advantageous in terms of throughput compared to the case where the first evacuation operation is switched to the second evacuation operation after the entire area of ​​the substrate S comes into contact with the substrate chuck 11.

[0098] Fifth Embodiment A fifth embodiment of the present invention will be described. In the above first embodiment, an example was described in which the substrate S was transported by the supply hand 51 onto the pins 13 protruding from the holding surface 11a of the substrate chuck 11. In this embodiment, an example is described in which the substrate S is directly transported by the supply hand 51 onto the substrate chuck 11. Note that this embodiment basically inherits the first embodiment, and can follow the first embodiment except for the matters mentioned below. Furthermore, the second embodiment and / or the third embodiment may be applied to this embodiment.

[0099] In this embodiment, the process of mounting the substrate S on the substrate chuck 11 by driving the supply hand 51 holding the substrate S to reduce the gap between the substrate chuck 11 and the substrate S can be defined as a substrate mounting process (substrate mounting step). In the substrate mounting process of this embodiment, the switching from the first exhaust operation to the second exhaust operation is performed during the period from when the gap between the substrate chuck 11 and the substrate S starts to be reduced by driving the supply hand 51 until the substrate chuck 11 and the substrate S start to come into contact with each other.

[0100] 15A to 15C are diagrams for explaining the substrate holding process when the substrate S is transported onto the substrate chuck 11 by the supply hand 51. Figures 15A to 15C show the substrate holding process of this embodiment in chronological order. The substrate mounting process can be controlled by the control unit 30.

[0101] 15(a) shows a state in which the substrate S held by the supply hand 51 is disposed above the substrate chuck 11. In this state, the substrate chuck 11 (holding surface 11a) and the substrate S are spaced apart. In this state (i.e., when the substrate S is supported by the supply hand 51), the first evacuation operation is started. Here, the supply hand 51 in this embodiment is configured to hold the lower surface of the substrate S by vacuum suction, but is not limited thereto, and may be configured to hold the upper surface of the substrate S by vacuum suction.

[0102] 15(b) and 15(c) show a state in which the gap between the substrate chuck 11 and the substrate S is narrowed by driving the supply hand 51 in the -Z direction. In this embodiment, the first evacuation operation is switched to the second evacuation operation in the state of FIG. 15(b), i.e., before (for example, immediately before) contact between the substrate chuck 11 (holding surface 11a) and the substrate S begins. This makes it possible to reduce distortion of the substrate S that occurs when the substrate S is held by the substrate chuck 11. Alternatively, the second evacuation operation may be switched to the third evacuation operation after contact between the substrate chuck 11 (holding surface 11a) and the substrate S begins.

[0103] 16 shows an example of the first and second evacuation operations in the substrate loading process, in which the horizontal axis represents the Z direction position of the supply hand 51 and the vertical axis represents the evacuation pressure.

[0104] In the substrate mounting process of this embodiment, when the supply hand 51 starts to move in the -Z direction while holding the substrate S above the substrate chuck 11, a first exhaust operation is started. In the first exhaust operation, exhaust is performed at an exhaust pressure of a first set value so as to reduce the sideways sliding of the substrate S on the supply hand 51 due to wind pressure generated by the high-speed movement of the supply hand 51. The first set value is set to a value that can keep the sideways sliding amount (shift amount) of the substrate S on the supply hand 51 within an allowable range during the period from the start of the drive of the supply hand 51 in the -Z direction to the start of contact between the holding surface 11a of the substrate chuck 11 and the substrate S. This makes it possible to reduce the sideways sliding of the substrate S on the supply hand 51.

[0105] The exhaust amount in the first exhaust operation (the flow rate of the gas exhausted through the exhaust holes 11b) is preferably equal to or greater than the flow rate of the gas pushed out from the space above the substrate chuck 11 by driving the supply hand 51 in the -Z direction (hereinafter, this may be referred to as the gas extrusion amount). However, depending on the arrangement of the piping system in the apparatus, it may be difficult to set the exhaust amount in the first exhaust operation to be greater than the gas extrusion amount. In this case, the exhaust amount in the first exhaust operation should be set taking into consideration the holding of the substrate S by the supply hand 51. For example, since the substrate S is vacuum-sucked by the supply hand 51, if the exhaust amount in the first exhaust operation is greater than or equal to the value obtained by subtracting the vacuum suction amount of the substrate S by the supply hand 51 from the gas extrusion amount, it is possible to reduce lateral slippage of the substrate S on the supply hand 51.

[0106] Next, when the Z-direction position of the supply hand 51 reaches the first position, a second evacuation operation is initiated. That is, at this timing, the first evacuation operation is switched to the second evacuation operation. In the second evacuation operation, evacuation is performed at an evacuation pressure of a second set value lower than the first set value so as to reduce distortion of the substrate S caused by holding the substrate S by the substrate chuck 11. The second set value is set to a value that allows the amount of distortion of the substrate S caused by holding the substrate S by the substrate chuck 11 to fall within an allowable range. This reduces distortion of the substrate S caused by holding the substrate S by the substrate chuck 11. Furthermore, by providing the second evacuation operation, the frictional force between the holding surface 11a of the substrate chuck 11 and the substrate S can be reduced, thereby reducing wear on the substrate chuck 11. Here, the first position is defined as the Z-direction position of the supply hand 51 at the time when the holding surface 11a of the substrate chuck 11 starts to come into contact with the substrate S, or a position on the +Z direction side of that position. The first position is determined in advance by experiment, simulation, or the like, and is stored in the control unit 30 (storage unit 32).

[0107] As described above, in the substrate mounting process of this embodiment, the first exhaust operation is switched to the second exhaust operation during the period from when the gap between the substrate chuck 11 and the substrate S starts to decrease due to the drive of the supply hand 51 until the substrate chuck 11 starts to contact the substrate S. The first exhaust operation reduces lateral slippage of the substrate S on the supply hand 51, allowing the substrate mounting process to be performed without reducing the drive speed of the supply hand 51, which can be advantageous in terms of throughput. The second exhaust operation reduces distortion of the substrate S that occurs when the substrate S contacts the holding surface 11a of the substrate chuck 11. Furthermore, the switch from the first exhaust operation to the second exhaust operation is performed at the time when or before the holding surface 11a starts to contact the substrate S, which can be advantageous in terms of throughput. In other words, the substrate mounting process of this embodiment is advantageous in terms of distortion of the substrate S and throughput during the substrate holding process.

[0108] <Embodiment of an article manufacturing method> The article manufacturing method according to an embodiment of the present invention is suitable for manufacturing articles such as microdevices, such as semiconductor devices, and elements having microstructures. The article manufacturing method according to this embodiment includes a processing step of processing a substrate using the substrate processing apparatus and substrate processing method described above, and a manufacturing step of manufacturing an article from the substrate processed in the processing step. Furthermore, this article manufacturing method also includes other well-known processes (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method according to this embodiment is advantageous over conventional methods in at least one of article performance, quality, productivity, and production cost.

[0109] <Summary of the embodiment> The disclosure of the present specification includes at least the following substrate holding device, substrate processing apparatus, substrate holding method, substrate processing method, and article manufacturing method. (Item 1) A substrate holding device for holding a substrate, a chuck for supporting the substrate; a pin protruding from the chuck; a control unit that controls evacuation of a space between the substrate and the chuck, the control unit performs control to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, The substrate holding device according to claim 1, wherein the second exhaust operation is performed during a period from when the protrusion of the pins starts to decrease until when the chuck and the substrate come into contact with each other. (Item 2) 2. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed at a timing when or before contact between the chuck and the substrate begins. (Item 3) the first pumping operation is initiated in a state where there is a gap between the chuck and the substrate; 3. The substrate holding device according to item 1 or 2, wherein the first exhaust pressure is set to a value that allows the amount of shift of the substrate on the pins to fall within an allowable range. (Item 4) 4. The substrate holding device according to claim 1, wherein the second exhaust pressure is set to a value that can keep the amount of distortion of the substrate caused by the support of the substrate by the chuck within an allowable range. (Item 5) 5. The substrate holding device according to claim 1, wherein the control unit controls the substrate holding device to further perform a third exhaust operation after the second exhaust operation, in which the space is evacuated at a third exhaust pressure higher than the second exhaust pressure. (Item 6) 6. The substrate holding device according to item 5, wherein the third exhaust pressure is equal to or lower than the first exhaust pressure. (Item 7) 8. The substrate holding device according to item 5 or 7, wherein the third exhaust operation is started after contact between the chuck and the substrate is started. (Item 8) 8. The substrate holding device according to any one of items 1 to 7, wherein the switching from the first exhaust operation to the second exhaust operation is performed while the amount of protrusion of the pins from the chuck is reduced. (Item 9) 8. The substrate holding device according to any one of items 1 to 7, wherein the switching from the first exhaust operation to the second exhaust operation is performed in a state where the reduction in the amount of protrusion of the pins from the chuck is stopped. (Item 10) 10. The substrate holding device according to any one of items 1 to 9, wherein switching from the first exhaust operation to the second exhaust operation is performed according to the amount of protrusion of the pin from the chuck. (Item 11) Further provided is a sensor for detecting exhaust pressure; 10. The substrate holding device according to any one of items 1 to 9, wherein the switching from the first exhaust operation to the second exhaust operation is performed in accordance with a detection result of the sensor. (Item 12) Further provided is a flow rate sensor for detecting the flow rate of the gas exhausted from the space, 10. The substrate holding device according to any one of items 1 to 9, wherein the switching from the first exhaust operation to the second exhaust operation is performed in accordance with a detection result of the flow rate sensor. (Item 13) A substrate holding device for holding a substrate, a chuck for supporting the substrate; a control unit that controls evacuation of a space between the substrate and the chuck, the control unit performs control to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, a substrate holding device, characterized in that the first exhaust operation is started when the outer periphery of the substrate placed on the chuck is not in contact with the chuck, and the second exhaust operation is performed before the entire area of ​​the substrate comes into contact with the chuck. (Item 14) A substrate processing apparatus for processing a substrate, A substrate holding device according to any one of items 1 to 13, a processing section for processing the substrate held by the substrate holding device; A substrate processing apparatus comprising: (Item 15) A substrate holding method for holding a substrate, comprising: a first evacuation step of evacuating a space between the substrate and a chuck supporting the substrate at a first evacuation pressure; a second evacuation step of evacuating the space at a second evacuation pressure lower than the first evacuation pressure after the first evacuation step, the second exhaust step is performed during a period from when the protrusion amount of the pins protruding from the chuck starts to decrease until when the chuck and the substrate come into contact with each other. A substrate holding method comprising: (Item 16) Item 16. The substrate holding method according to item 15, wherein the first evacuation step is performed while the substrate is supported by a transfer hand. (Item 17) A substrate processing method for processing a substrate, comprising: a holding step of holding the substrate on a chuck using the substrate holding method according to item 15 or 16; a processing step of processing the substrate held by the chuck in the holding step; A substrate processing method comprising: (Item 18) processing a substrate using the substrate processing method according to claim 17; manufacturing an article from the processed substrate; A method for manufacturing an article, comprising:

[0110] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0111] 10: substrate holder, 11: substrate chuck, 11a: holder surface, 11b: exhaust hole, 12a: fine movement stage, 12b: coarse movement stage, 13: pin, 20: processing unit, 30: control unit, 100: exposure apparatus (substrate processing apparatus)

Claims

1. A substrate holding device for holding a substrate, a chuck for supporting the substrate; a pin protruding from the chuck; a control unit that controls evacuation of a space between the substrate and the chuck, the control unit controls to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, The substrate holding device according to claim 1, wherein the second exhaust operation is performed during a period from when the protrusion amounts of the pins start to decrease until when the chuck and the substrate come into contact with each other.

2. 2. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed at a timing when or before contact between the chuck and the substrate begins.

3. the first pumping operation is initiated in a state where there is a gap between the chuck and the substrate; 2. The substrate holding device according to claim 1, wherein the first exhaust pressure is set to a value that allows the amount of shift of the substrate on the pins to fall within an allowable range.

4. 2. The substrate holding device according to claim 1, wherein the second exhaust pressure is set to a value that allows an amount of distortion of the substrate caused by the support of the substrate by the chuck to fall within an allowable range.

5. 2. The substrate holding device according to claim 1, wherein the control unit controls the substrate holding device to further perform a third exhaust operation after the second exhaust operation, in which the space is evacuated at a third exhaust pressure greater than the second exhaust pressure.

6. 6. The substrate holding device according to claim 5, wherein the third exhaust pressure is equal to or lower than the first exhaust pressure.

7. 6. The substrate holding device of claim 5, wherein the third evacuation operation is initiated after contact between the chuck and the substrate begins.

8. 2. The substrate holding device according to claim 1, wherein the switching from the first evacuation operation to the second evacuation operation is performed in a state where the amount of protrusion of the pins from the chuck is reduced.

9. 2. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed in a state where the reduction in the amount of protrusion of the pins from the chuck is stopped.

10. 2. The substrate holding device according to claim 1, wherein the switching from the first evacuation operation to the second evacuation operation is performed in accordance with the amount of protrusion of the pin from the chuck.

11. Further provided is a sensor for detecting exhaust pressure; 2. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed in response to a detection result of the sensor.

12. Further provided is a flow rate sensor for detecting the flow rate of the gas exhausted from the space, 2. The substrate holding device according to claim 1, wherein the switching from the first exhaust operation to the second exhaust operation is performed in accordance with a detection result of the flow rate sensor.

13. A substrate holding device for holding a substrate, a chuck for supporting the substrate; a control unit that controls evacuation of a space between the substrate and the chuck, the control unit controls to perform a first exhaust operation of exhausting the space at a first exhaust pressure, and a second exhaust operation of exhausting the space at a second exhaust pressure lower than the first exhaust pressure after the first exhaust operation, a substrate holding device, characterized in that the first exhaust operation is started when the outer periphery of the substrate placed on the chuck is not in contact with the chuck, and the second exhaust operation is performed before the entire area of ​​the substrate comes into contact with the chuck.

14. A substrate processing apparatus for processing a substrate, A substrate holding device according to any one of claims 1 to 13; a processing section for processing the substrate held by the substrate holding device; A substrate processing apparatus comprising:

15. A substrate holding method for holding a substrate, comprising: a first evacuation step of evacuating a space between the substrate and a chuck supporting the substrate at a first evacuation pressure; a second evacuation step of evacuating the space at a second evacuation pressure lower than the first evacuation pressure after the first evacuation step, the second exhaust step is performed during a period from when the protrusion amount of the pins protruding from the chuck starts to decrease until when the chuck and the substrate come into contact with each other. A substrate holding method comprising:

16. 16. The substrate holding method according to claim 15, wherein the first exhaust step is performed while the substrate is supported by a transfer hand.

17. A substrate processing method for processing a substrate, comprising: a holding step of holding the substrate on a chuck using the substrate holding method according to claim 15; a processing step of processing the substrate held by the chuck in the holding step; A substrate processing method comprising:

18. processing a substrate using the substrate processing method of claim 17; manufacturing an article from the processed substrate; A method for manufacturing an article, comprising:

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