Member for semiconductor manufacturing apparatus

Abstract

To provide a member for a semiconductor manufacturing apparatus and the semiconductor manufacturing apparatus capable of reducing the generation or an influence of particles.SOLUTION: A member for a semiconductor manufacturing apparatus includes a base material having a first surface, a second surface on the opposite side of the first surface, and at least one hole penetrating the first and second surfaces, and a ceramic layer provided on the base material. The hole includes a first hole part continuing to the first surface and inclined in a first direction from the first surface to the second surface, a second hole part existing between the second surface and the first hole part in the first direction and extending along the first direction, and a third hole part existing between the first hole part and the second hole part in the first direction, inclined in the first direction, and exposed. The plasma corrosion resistance of the ceramic layer is higher than that of the base material. The ceramic layer includes a first part provided on the first surface and exposed, and a second part provided on the first hole part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD OF THE INVENTION Aspects of the present invention generally relate to semiconductor manufacturing equipment components and semiconductor manufacturing equipment. [Background technology]

[0002] In the manufacturing process of semiconductor devices, semiconductor manufacturing equipment is used to process workpieces such as semiconductor wafers with plasma. Such semiconductor manufacturing equipment often contains components with at least one hole that come into contact with the plasma. Particles can be generated from such semiconductor manufacturing equipment components. Because particles can reduce the yield of manufactured semiconductor devices, there is a need to reduce the generation and impact of particles. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-057251 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-028379 Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention has been made based on the recognition of the above problem, and has an object to provide a semiconductor manufacturing equipment member and a semiconductor manufacturing equipment that can reduce the generation or influence of particles. [Means for solving the problem]

[0005] A first invention is a semiconductor manufacturing equipment component used in a chamber of a semiconductor manufacturing equipment, comprising: a substrate including a first surface, a second surface opposite to the first surface, and at least one hole penetrating the first surface and the second surface; and a ceramic layer provided on the substrate, wherein the hole has: a first hole portion continuous with the first surface and inclined with respect to a first direction from the first surface toward the second surface; a second hole portion located between the second surface and the first hole portion in the first direction and extending along the first direction; and a third hole portion located between the first hole portion and the second hole portion in the first direction and inclined with respect to the first direction, wherein the plasma corrosion resistance of the ceramic layer is higher than the plasma corrosion resistance of the substrate, and the ceramic layer includes a first portion provided so as to be exposed on the first surface and a second portion provided on the first hole portion, and the third hole portion is provided so as to be exposed.

[0006] According to this semiconductor manufacturing equipment component, the second portion of the ceramic layer is provided in the first hole portion, which is relatively close to the first portion that contacts the plasma, of the inclined surface formed by the first hole portion and the third hole portion. This effectively suppresses particle generation from the first hole portion. Meanwhile, the third hole portion, which is relatively far from the first portion of the inclined surface, contacts the plasma. That is, the third hole portion, which is farther from the first portion than the first hole portion and therefore has a relatively lower risk of plasma corrosion, is not covered with a ceramic layer, and the substrate directly contacts the plasma at the third hole portion. This effectively suppresses particle generation from a ceramic layer that is inferior in quality and formed in the third hole portion.

[0007] A second invention is a component for semiconductor manufacturing equipment, wherein, in the first invention, the hole has an inclined surface including the first hole portion and the third hole portion, and the inclined surface is linear in a cross section parallel to the first direction.

[0008] This semiconductor manufacturing equipment member can reduce electric field concentration on the inclined surface or on the ceramic layer on the inclined surface.

[0009] A third invention is a component for semiconductor manufacturing equipment, wherein, in the first invention, the hole has an inclined surface including the first hole portion and the third hole portion, and the angle between the first surface and the inclined surface is larger than the angle between the second hole portion and the inclined surface.

[0010] According to this semiconductor manufacturing equipment member, the angle between the first surface and the inclined surface is relatively large, which reduces plasma concentration near the edge formed by the first surface and the inclined surface and suppresses particle generation. Also, the angle between the second hole portion and the inclined surface is relatively small, which more effectively suppresses plasma from entering the hole.

[0011] A fourth invention is a member for a semiconductor manufacturing apparatus according to any one of the first to third inventions, wherein the second portion is thinner than the first portion.

[0012] With this semiconductor manufacturing equipment member, the first portion, which is more likely to be exposed to plasma, is thicker than the second portion, which can further suppress particle generation from the first surface. On the other hand, the second portion, which is less likely to be exposed to plasma than the first portion, is relatively thinner, which can, for example, suppress breakdown of the ceramic layer in the second portion, thereby further suppressing particle generation.

[0013] A fifth invention is a member for a semiconductor manufacturing apparatus according to any one of the first to fourth inventions, wherein the density of the second portion is higher than the density of the first portion.

[0014] According to this semiconductor manufacturing equipment member, the second portion has a relatively high density, which can prevent damage or peeling of the second portion due to physical contact during maintenance or handling of the semiconductor manufacturing equipment member, thereby further reducing particle generation.

[0015] A sixth invention is the member for a semiconductor manufacturing apparatus according to any one of the first to fifth inventions, wherein the second portion has a higher hardness than the first portion.

[0016] According to this semiconductor manufacturing equipment member, the second portion has a relatively high hardness, which prevents the second portion from being damaged or peeled off due to physical contact during maintenance or handling of the semiconductor manufacturing equipment member, thereby further reducing particle generation.

[0017] A seventh invention is a member for a semiconductor manufacturing apparatus according to any one of the first to sixth inventions, wherein the ceramic layer contains polycrystalline ceramics.

[0018] This semiconductor manufacturing equipment member can more reliably reduce the generation or influence of particles.

[0019] An eighth invention is a member for semiconductor manufacturing equipment, wherein in the seventh invention, the average crystallite size of the polycrystalline ceramic calculated from a TEM image at a magnification of 400,000 to 2,000,000 times is 3 nanometers or more and 50 nanometers or less.

[0020] This semiconductor manufacturing equipment member can more reliably reduce the generation or influence of particles.

[0021] A ninth invention is a component for semiconductor manufacturing equipment according to any one of the first to eighth inventions, wherein the ceramic layer contains at least one selected from the group consisting of oxides of rare earth elements, fluorides of rare earth elements, and oxyfluorides of rare earth elements.

[0022] This semiconductor manufacturing equipment member can more reliably reduce the generation or influence of particles.

[0023] A tenth invention is a semiconductor manufacturing equipment member according to the ninth invention, wherein the rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.

[0024] This semiconductor manufacturing equipment member can more reliably reduce the generation or influence of particles.

[0025] An eleventh invention is a member for a semiconductor manufacturing apparatus according to any one of the first to tenth inventions, wherein the base material contains ceramic.

[0026] This semiconductor manufacturing equipment member can more reliably reduce the generation or influence of particles.

[0027] A twelfth invention is a semiconductor manufacturing equipment member according to the eleventh invention, wherein the base material contains alumina.

[0028] This semiconductor manufacturing equipment member can more reliably reduce the generation or influence of particles.

[0029] A thirteenth invention is a semiconductor manufacturing apparatus comprising a chamber and a semiconductor manufacturing equipment member according to any one of the first to twelfth inventions, wherein the chamber has an inner wall that forms a space in which plasma is generated, and the ceramic layer of the semiconductor manufacturing equipment member constitutes at least a part of the inner wall.

[0030] This semiconductor manufacturing apparatus can reduce the generation or influence of particles. [Effects of the Invention]

[0031] According to aspects of the present invention, a member for a semiconductor manufacturing apparatus and a semiconductor manufacturing apparatus are provided that can reduce the generation or influence of particles. [Brief explanation of the drawings]

[0032] [Figure 1] 1 is a cross-sectional view illustrating a semiconductor manufacturing apparatus having a member for a semiconductor manufacturing apparatus according to a first embodiment. [Figure 2]1 is a cross-sectional view illustrating a portion of a semiconductor manufacturing equipment member according to a first embodiment. [Figure 3] 3(a) to 3(c) are cross-sectional views illustrating a part of another semiconductor manufacturing equipment member according to the first embodiment. [Figure 4] 4(a) to 4(c) are cross-sectional views illustrating a part of the substrate according to the first embodiment. [Figure 5] 5(a) and 5(b) are cross-sectional views illustrating a part of a semiconductor manufacturing equipment member according to the second embodiment. [Figure 6] 6(a) and 6(b) are cross-sectional views illustrating a part of a member for a semiconductor manufacturing apparatus. [Figure 7] FIG. 1 is a graph illustrating stress in a semiconductor manufacturing equipment member. [Figure 8] 1 is a table illustrating an example of evaluation of particle resistance in semiconductor manufacturing equipment members. DETAILED DESCRIPTION OF THE INVENTION

[0033] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, like components are designated by like reference numerals and detailed descriptions thereof will be omitted where appropriate. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing.

[0034] (First embodiment) FIG. 1 is a cross-sectional view illustrating a semiconductor manufacturing apparatus having a member for a semiconductor manufacturing apparatus according to the first embodiment. 1 includes a chamber 110, a semiconductor manufacturing equipment member 120, and an electrostatic chuck 160. The electrostatic chuck 160 is provided in a lower portion inside the chamber 110. An object to be attracted, such as a wafer 210, is placed on the electrostatic chuck 160. In this example, the semiconductor manufacturing equipment member 120 is provided in an upper portion inside the chamber 110. For example, the semiconductor manufacturing equipment member 120 is a top plate member of the chamber 110 that is located directly above the electrostatic chuck 160 and the wafer 210 inside the chamber 110.

[0035] The chamber 110 has an inner wall 111 that forms a space (region 191) where plasma is generated. A ceramic layer 20 (see FIG. 2) on the surface of a semiconductor manufacturing equipment member 120 constitutes at least a portion of the inner wall 111. In this example, the inner wall 111 has a lower inner wall 111b on which the electrostatic chuck 160 is disposed, and an upper inner wall 111u that is disposed above the lower inner wall 111b. The ceramic layer 20 of the semiconductor manufacturing equipment member 120 is provided on at least a portion of the upper inner wall 111u.

[0036] In the semiconductor manufacturing apparatus 100, high-frequency power is supplied, and a source gas, such as a halogen-based gas, is introduced into the chamber 110 as indicated by an arrow A1 in Fig. 1. Then, the source gas introduced into the chamber 110 is converted into plasma in a region 191 between the electrostatic chuck 160 and the semiconductor manufacturing apparatus member 120.

[0037] Here, if the inner wall of the chamber 110 is corroded by the plasma, particles 221 may be generated. If these particles 221 adhere to the wafer 210, defects may occur in the manufactured semiconductor devices. This may result in a decrease in the yield and productivity of the semiconductor devices. Therefore, the semiconductor manufacturing equipment member 120 is required to have plasma resistance.

[0038] The semiconductor manufacturing equipment member according to the embodiment may be a member disposed at a position other than the upper part of the chamber. The semiconductor manufacturing equipment in which the semiconductor manufacturing equipment member is used is not limited to the example shown in FIG. 1, and includes any semiconductor manufacturing equipment (semiconductor processing equipment) that performs processes such as annealing, etching, sputtering, and CVD (Chemical Vapor Deposition).

[0039] The semiconductor manufacturing equipment member according to the embodiment can be suitably used as various components in the semiconductor manufacturing equipment, particularly as components used in an environment exposed to a corrosive high-density plasma atmosphere, such as a chamber wall, a shower plate, a liner, a shield, a window, an edge ring, and a focus ring.

[0040] FIG. 2 is a cross-sectional view illustrating a part of the semiconductor manufacturing equipment member according to the first embodiment. FIG. 2 shows an enlarged view of the vicinity of region R shown in FIG. The semiconductor manufacturing equipment member 120 includes a substrate 10 and a ceramic layer 20. The substrate 10 has a first surface 11 and a second surface 12 opposite to the first surface 11. The first surface 11 is a surface facing the inside of the chamber 110 shown in FIG. 1 , and the second surface 12 is a surface facing the outside of the chamber 110. The substrate 10 has at least one hole 13. The hole 13 penetrates the substrate 10 from the first surface 11 to the second surface 12.

[0041] In this example, the substrate 10 is, for example, plate-shaped (disk-shaped). The first surface 11 and the second surface 12 are, for example, flat. However, the first surface 11 and the second surface 12 may be curved. Furthermore, one hole 13 is provided in the center of the substrate 10. For example, a member such as an injector that injects plasma raw material gas is disposed in the hole 13. The plasma raw material gas is introduced into the chamber 110 through the hole 13. However, the hole 13 does not have to be a hole that supplies raw material gas for plasma generation into the chamber 110, and may be any hole that penetrates the substrate 10. Furthermore, the hole 13 does not have to be located in the center of the substrate 10, and multiple holes may be provided.

[0042] The direction from the first surface 11 to the second surface 12 is defined as the Z direction (first direction). One direction perpendicular to the Z direction is defined as the X direction, and the direction perpendicular to the Z direction and the X direction is defined as the Y direction. For example, the first surface 11 and the second surface 12 are perpendicular to the Z direction and extend along the XY plane.

[0043] The hole 13 (inner peripheral surface 13s of the hole) has a first hole portion 13a, a second hole portion 13b, and a third hole portion 13c. When viewed along the Z direction, the hole 13 is, for example, circular. The inner peripheral surface 13s is the inner peripheral surface of the substrate 10 that defines the hole 13. The inner peripheral surface 13s faces inward of the hole 13 and intersects with the XY plane.

[0044] The first hole portion 13a is a region of the inner circumferential surface 13s located near the first surface 11 and adjacent to the first surface 11. The first hole portion 13a is continuous with the first surface 11. The first hole portion 13a is located between the first surface 11 and the second surface 12 in the Z direction. The first hole portion 13a is not parallel to the first surface 11 but is an inclined surface that intersects with the first surface 11 and the Z direction. The first hole portion 13a may be a surface extending parallel to the Z direction. In this example, the first hole portion 13a is linear in a cross section parallel to the Z direction as shown in FIG. 2. However, the first hole portion 13a does not have to be linear in a cross section parallel to the Z direction and may be curved, for example. When viewed along the Z direction (i.e., when projected onto the XY plane), the first hole portion 13a is, for example, annular and surrounded by the first surface 11.

[0045] In this example, in a cross section parallel to the Z direction, the boundary 14 where the first surface 11 and the first hole portion 13a meet is a corner. However, the first surface 11 and the first hole portion 13a may be smoothly connected. In other words, in the cross section of FIG. 2, the boundary 14 may be rounded and curved, and may have a curvature.

[0046] The second hole portion 13b is located between the first hole portion 13a and the second surface 12 in the Z direction. In other words, the position of the second hole portion 13b in the Z direction is between the position of the first hole portion 13a in the Z direction and the position of the second surface 12 in the Z direction. For example, the second hole portion 13b is located in the vicinity of the second surface 12 on the inner circumferential surface 13s and is a region adjacent to the second surface 12. The second hole portion 13b may be continuous with the second surface 12. The second hole portion 13b extends in the Z direction and is, for example, parallel to the Z direction. The second hole portion 13b forms, for example, a vertical plane that is approximately perpendicular to the second surface 12. When viewed along the Z direction, the second hole portion 13b has, for example, an annular shape located inside the first hole portion 13a.

[0047] The third hole portion 13c is located between the first hole portion 13a and the second hole portion 13b in the Z direction. In other words, the position of the third hole portion 13c in the Z direction is between the position of the first hole portion 13a in the Z direction and the position of the second hole portion 13b in the Z direction. The third hole portion 13c is a region of the inner circumferential surface 13s that is continuous with the first hole portion 13a. The third hole portion 13c is not parallel to the first surface 11 but is an inclined surface that intersects with the first surface 11 and the Z direction. The third hole portion 13c may be a surface extending in the Z direction. In this example, the third hole portion 13c is linear in a cross section parallel to the Z direction. However, the third hole portion 13c does not have to be linear in a cross section parallel to the Z direction and may be curved, for example. When viewed along the Z direction, the third hole portion 13c is, for example, annular and surrounded by the first hole portion 13a, and the second hole portion 13b is located inside the third hole portion 13c. The third hole portion 13c and the second hole portion 13b may be continuous.

[0048] In this example, in a cross section parallel to the Z direction, the direction in which the first hole 13a extends and the direction in which the third hole 13c extends are on the same straight line. In other words, the angle θ1 formed between the third hole 13c and the Z direction is the same as the angle θ2 formed between the first hole 13a and the Z direction. However, the angles θ1 and θ2 may be different.

[0049] In this example, in a cross section parallel to the Z direction, the boundary 17 where the second hole portion 13b and the third hole portion 13c meet is a corner. However, the second hole portion 13b and the third hole portion 13c may be smoothly connected. In other words, in the cross section of FIG. 2, the boundary 17 may be rounded and curved, and may have a curvature.

[0050] Furthermore, the hole 13 (inner peripheral surface 13s of the hole) has an inclined surface 13ac. The inclined surface 13ac is, for example, a surface including the first hole portion 13a and the third hole portion 13c. The inclined surface 13ac is continuous with the first surface 11 and is inclined with respect to the first surface 11 and the Z direction. The inclined surface 13ac is continuous with a vertical surface (the second hole portion 13b) and connects the first surface 11 and the second hole portion 13b. In this example, the inclined surface 13ac formed by the first hole portion 13a and the third hole portion 13c is linear in a cross section parallel to the Z direction. However, the inclined surface 13ac may be curved.

[0051] The angle θα formed between the first surface 11 and the inclined surface 13ac is larger than the angle θβ formed between the second hole portion 13b (vertical surface) and the inclined surface 13ac. For example, the angle θα is the angle formed between the first surface 11 and the first hole portion 13a, and the angle θβ is the angle formed between the second hole portion 13b and the third hole portion 13c.

[0052] The ceramic layer 20 has a higher plasma corrosion resistance than the substrate 10. The ceramic layer 20 is provided on the substrate 10. More specifically, as shown in FIG. 2 , the ceramic layer 20 includes a first portion 21 and a second portion 22. The first portion 21 is provided on the first surface 11 and is in contact with the first surface 11. The first portion 21 is provided over substantially the entire first surface 11. The second portion 22 is provided on the first hole 13a and is in contact with the first hole 13a. A surface 21s of the first portion 21 and a surface 22s of the second portion 22 are in direct contact with the plasma in the chamber 110. In other words, the surface 21s is the surface opposite to the surface of the first portion 21 that is in contact with the first surface 11 and is exposed to the interior of the chamber 110. The surface 22s is the surface opposite to the surface of the second portion 22 that is in contact with the first hole 13a and is exposed to the interior of the chamber 110. The first surface 11 is covered by the first portion 21 and is therefore not in direct contact with the plasma. The first hole portion 13a is covered by the second portion 22 and is therefore not in direct contact with the plasma. In other words, the first surface 11 and the first hole portion 13a are covered with the ceramic layer 20, and the ceramic layer 20 is configured to be exposed to the plasma. The surface 21s is, for example, a plane parallel to the XY plane. The surface 21s may be a curved surface. The surface 22s is an inclined surface that intersects with the surface 21s and the Z direction. The surface 21s may be a surface extending in the Z direction.

[0053] The ceramic layer 20 is not provided on the second surface 12, the second hole portion 13b, or the third hole portion 13c. In other words, in this example, the region of the inner circumferential surface 13s of the hole 13 where the ceramic layer 20 is provided is the first hole portion 13a, and the region where the ceramic layer 20 is not provided is the second hole portion 13b and the third hole portion 13c. The third hole portion 13c is in contact with the end of the second portion 22. The second hole portion 13b and the third hole portion 13c are exposed to the plasma in the chamber 110 and are in direct contact with the plasma. The second hole portion 13b and the third hole portion 13c are not covered with the ceramic layer 20.

[0054] The arithmetic mean height Sa of the surface 21s of the first portion 21 is smaller than the arithmetic mean height Sa of the surface 22s of the second portion 22. The arithmetic mean height Sa (surface roughness) can be evaluated by a method described later. For example, the surface roughness of the first portion 21 (roughness of the surface 21s) is smaller than the surface roughness of the second portion 22 (roughness of the surface 22s).

[0055] As described above, in order to reduce particles, semiconductor manufacturing equipment components that come into contact with plasma are required to have plasma resistance. Therefore, conventionally, methods have been used in which the surfaces of semiconductor manufacturing equipment components are coated with a film (layer) that has excellent plasma resistance. However, even if the non-porous portion that occupies the majority of a semiconductor manufacturing equipment component (e.g., a top plate component) is coated with a highly plasma-resistant film (e.g., Y2O3, etc.), there is a risk that the requirement for particle reduction cannot be fully met. Therefore, there is also a need to control particles from holes, for example. Possible particles from holes include particles generated when part of a coating provided in the hole detaches, and particles from a component (e.g., an injector) placed in the hole.

[0056] In contrast, in the embodiment, the ceramic layer 20 is provided on the first surface 11 and the first hole portions 13a of the substrate 10, and the arithmetic mean height Sa of the surface 21s of the first portion 21 on the first surface 11 is smaller than the arithmetic mean height Sa of the surface 22s of the second portion 22 on the first hole portions 13a. This makes it possible to reduce the generation or influence of particles.

[0057] For example, the arithmetic mean height Sa (surface roughness) of the surface 21s of the first portion 21 that comes into contact with the corrosive plasma is relatively small, which effectively suppresses the generation of particles from the first portion 21. That is, for example, the first portion has a smooth structure, which can suppress the generation of cracks and particles that originate from irregularities in the first portion 21. For example, it can suppress the first portion 21 from being corroded by the plasma and part of it being detached from the ceramic layer 20 to become particles.

[0058] Furthermore, the arithmetic mean height Sa (surface roughness) of the surface 22s of the second portion 22 above the first hole 13a is relatively large, which can suppress the generation or influence of particles from the holes 13. For example, since the second portion 22 is provided above the first hole 13a, it is considered that the second portion 22 may be more affected by the electric field than the first portion 21. In other words, when the first portion 21 provided on the first surface 11 is exposed to plasma, the second portion 22 above the first hole 13a is located near the end of the hole 13, so the electric field may be more likely to concentrate thereon than in the first portion 21. In the portion where the electric field concentrates, the electric field strength is high, and the plasma concentration increases, resulting in greater damage by the plasma. There is a risk that the damaged portion will detach from the ceramic layer 20, generating particles. In contrast, in the embodiment, the arithmetic mean height Sa of the surface 22s of the second portion 22 is relatively large, which increases the surface area of ​​the second portion 22 and can mitigate the concentration of the electric field.

[0059] Furthermore, since the arithmetic mean height Sa of the surface 22s of the second portion 22 provided near the end (near the outlet) of the hole 13 is relatively large, particles generated from the hole 13 can be collected by the second portion 22, and the effects of the particles can be more effectively suppressed.

[0060] Furthermore, when the plasma generation gas passes through the holes 13, the temperature around the holes changes due to the injection of the gas. Therefore, the thermal stress in the second portion 22 may be higher than the thermal stress in the first portion 21. The thermal stress may cause cracks and particles to occur in the second portion 22. In contrast, the arithmetic mean height Sa of the surface 22s of the second portion 22 is relatively large, which increases the surface area of ​​the second portion 22 and improves the heat dispersion (heat dissipation) effect of the second portion 22. This makes it possible to suppress the occurrence of cracks and particles in the second portion 22.

[0061] For example, it is desirable that the surface roughness of the second portion 22 be two to ten times, more preferably five times, the surface roughness of the first portion 21. It is desirable that the arithmetic mean height Sa of the surface 22s of the second portion 22 be two to ten times, more preferably five times, the arithmetic mean height Sa of the surface 21s of the first portion 21. The arithmetic mean height Sa of the surface 22s of the second portion 22 is, for example, less than 0.5 micrometers (μm) or, for example, 0.005 μm or more. The arithmetic mean height Sa of the surface 21s of the first portion 21 is, for example, less than 0.1 μm or, for example, 0.001 μm or more. Such a configuration can more reliably reduce the generation or influence of particles.

[0062] For example, the surface roughness of the third hole portion 13c is greater than the surface roughness of the first portion 21 and greater than the surface roughness of the second portion 22. For example, the arithmetic mean height Sa of the third hole portion 13c is greater than the arithmetic mean height Sa of the surface 21s of the first portion 21 and greater than the arithmetic mean height Sa of the surface 22s of the second portion 22.

[0063] As already mentioned, in this example, the ceramic layer 20 is not provided on the third hole portion 13c, and the inner wall of the hole 13 is exposed. In other words, the third hole portion 13c is the boundary between the ceramic layer 20 and the inner wall of the hole 13, and is the substrate end portion that comes into contact with the plasma. By making the arithmetic mean height Sa (surface roughness) of such a substrate end portion (third hole portion 13c) relatively large, the surface area of ​​the substrate end portion increases, and the concentration of the electric field at the substrate end portion can be alleviated. This makes it possible, for example, to suppress plasma damage due to electric field concentration at the substrate end portion and suppress particle generation from the substrate end portion.

[0064] For example, it is desirable that the surface roughness of the third hole portions 13c is greater than twice the surface roughness of the first portion 21. It is also desirable that the surface roughness of the third hole portions 13c is not more than 10 times the surface roughness of the first portion 21. It is desirable that the arithmetic mean height Sa of the third hole portions 13c is greater than twice the arithmetic mean height Sa of the surface 21s of the first portion 21. It is also desirable that the arithmetic mean height Sa of the third hole portions 13c is not more than 10 times the arithmetic mean height Sa of the surface 21s of the first portion 21. With this configuration, it is possible to more reliably reduce the generation or influence of particles.

[0065] Furthermore, the surface roughness of the third hole portions 13c may be greater than the surface roughness of the first portion 21 and less than the surface roughness of the second portion 22. For example, the arithmetic mean height Sa of the third hole portions 13c may be greater than the arithmetic mean height Sa of the surface 21s of the first portion 21 and less than the arithmetic mean height Sa of the surface 22s of the second portion 22.

[0066] In the third hole portion 13c, plasma and the substrate 10 are in direct contact with each other, which may result in the generation of particles from the substrate 10. In contrast, in the embodiment, the third hole portion 13c is disposed farther from the first surface 11 and the second surface 12 than the first hole portion 13a and the second hole portion 13b. Furthermore, when the arithmetic mean height Sa of the third hole portion 13c is smaller than the arithmetic mean height Sa of the surface of the second portion 22, the generation of particles from the third hole portion 13c can be further reduced. That is, for example, the generation of cracks and particles originating from the irregularities in the third hole portion 13c can be suppressed. It is possible to prevent a portion of the third hole portion 13c from detaching from the substrate 10 and becoming a particle.

[0067] As described above, if the substrate 10 is corroded by contact with plasma, fine particles may be generated from the substrate 10, potentially reducing the yield of manufactured semiconductor devices. Therefore, the surface of the substrate 10 that comes into contact with plasma is coated with a ceramic layer that has higher plasma corrosion resistance than the substrate 10. The holes 13 formed in the substrate 10 have, for example, vertical surfaces perpendicular to the first and second surfaces of the substrate 10. However, some of the plasma may penetrate into the holes 13, corroding the inner walls of the holes 13 and generating particles from the holes 13. Therefore, a method of providing a ceramic layer with high plasma corrosion resistance on the inner walls (e.g., vertical surfaces) of the holes 13 is also conceivable. However, for example, the ceramic layer inside the holes 13 may be relatively fragile, and if the fragile ceramic layer is corroded by plasma, particles may be generated. Furthermore, plasma concentration may be likely to occur on the inclined surfaces (first hole portion 13a and third hole portion 13c) between the first surface 11 and the second hole portion 13b.

[0068] In contrast, in the embodiment, the second portion 22 of the ceramic layer 20 is provided in the first hole portion 13a, which is relatively close to the first portion 21 that contacts the plasma, of the inclined surface 13ac formed by the first hole portion 13a and the third hole portion 13c. This effectively suppresses particle generation from the first hole portion 13a. On the other hand, the third hole portion 13c, which is relatively far from the first portion 21 of the inclined surface 13ac, contacts the plasma. That is, the third hole portion 13c, which is farther from the first portion 21 than the first hole portion 13a and therefore has a relatively lower risk of plasma corrosion, is not covered with the ceramic layer 20, and the substrate 10 directly contacts the plasma in the third hole portion 13c. This effectively suppresses particle generation from a ceramic layer having inferior properties that is formed in the third hole portion 13c.

[0069] Furthermore, if the inclined surface 13ac is curved in a cross section parallel to the Z direction, an electric field may concentrate on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac, which may result in the generation of particles. In contrast, if the inclined surface 13ac is linear in a cross section parallel to the Z direction, the electric field concentration on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac can be further alleviated.

[0070] Furthermore, for example, in the ceramic layer 20, the second portion 22 is thinner than the first portion 21. That is, the thickness T22 of the second portion 22 is smaller than the thickness T21 of the first portion 21. Because the first portion 21, which is more easily exposed to plasma, is thicker than the second portion 22, the generation of particles from the first surface 11 can be further suppressed. On the other hand, because the second portion 22, which is less easily exposed to plasma than the first portion 21, is relatively thin, for example, the collapse of the ceramic layer 20 in the second portion 22 can be suppressed, and the generation of particles can be further suppressed. For example, by reducing the film thickness in the second portion 22, strain and internal stress in the film can be alleviated, and the collapse of the film can be suppressed.

[0071] The thickness of the ceramic layer 20 is the distance from the surface of the substrate 10 to the surface of the ceramic layer 20. Specifically, the thicknesses of the ceramic layer 20 (thicknesses T11 and T22) are determined as follows. As shown in FIG. 2, the semiconductor manufacturing equipment member 120 is cut parallel to the Z direction, and the fracture surface is observed using a scanning electron microscope (SEM) to determine the thickness of the ceramic layer 20. For example, the thickness T21 of the first portion 21 is the length from the first surface 11 to the surface 21s along a direction perpendicular to the first surface 11. For example, the thickness T22 of the second portion 22 is the length from the first hole 13a to the surface 22s along a direction perpendicular to the first hole 13a. For example, a Hitachi S-5500 may be used as the SEM, and the SEM observation conditions may be a magnification of 5000 times and an acceleration voltage of 15 kV. If there is variation in thickness in the cross-sectional image, measurements are performed at multiple locations and the average value is calculated. Methods for making the thickness T22 of the second portion 22 smaller than the thickness T21 of the first portion 21 can be known, such as varying the deposition time (making the deposition time of the second portion shorter than that of the first portion) or varying the polishing amount (making the polishing amount of the second portion greater than that of the first portion).

[0072] Furthermore, the edge portion (boundary 14) formed by the first surface 11 and the inclined surface 13ac is located near the plasma irradiation surface (surface 21s). Therefore, plasma may be easily concentrated near this edge portion (ceramic layer 20 on the edge portion). In contrast, in the embodiment, the angle θα formed between the first surface 11 and the inclined surface 13ac is larger than the angle θβ formed between the inclined surface 13ac and the vertical surface (second hole portion 13b). A relatively large angle θα can alleviate plasma concentration near the edge portion formed by the first surface 11 and the inclined surface 13ac, thereby suppressing particle generation. On the other hand, when the angle θβ is large, plasma is more likely to penetrate into the hole 13. In contrast, a relatively small angle θβ can effectively suppress plasma from penetrating into the hole 13.

[0073] Furthermore, when the angle θα is larger than the angle θβ, it is easy to increase the length of the second hole portion 13b in the Z direction. For example, the length Ln shown in FIG. 6(a) is longer than the length Ln shown in FIG. 6(b). For example, in FIG. 2, if the angle θα is further increased while the thickness of the substrate 10 (the positions of the first surface 11 and the second surface 12 in the Z direction) and the diameter of the hole 13 (the positions of the boundary 14 and the boundary 17 in the X direction) are not changed and the inclined surface 13ac remains linear, the position of the boundary 17 moves downward, and the second hole portion 13b becomes longer in the Z direction. The flow (direction) of the plasma source gas flowing into the chamber from the hole 13 is restricted by, for example, the second hole portion 13b. Therefore, a longer second hole portion 13b makes it easier to stabilize the flow of the source gas. Furthermore, when a unit such as an injector is fixed to the second hole portion 13b, a longer second hole portion 13b makes it easier to attach the unit and reduces exposure of the unit to plasma.

[0074] The boundary 14 and the boundary 17 are preferably chamfered, which can further reduce plasma concentration in the ceramic layer 20 on the boundary 14 and at the boundary 17.

[0075] The angle θα is, for example, not less than 150° and not more than 180°, and preferably not less than 160° and not more than 180°, which can further mitigate plasma concentration near the edge formed by the first surface 11 and the inclined surface 13ac, thereby further suppressing the generation of particles.

[0076] The angle θβ is, for example, greater than 90° and equal to or less than 120°, and preferably greater than 90° and equal to or less than 105°, which can more effectively prevent the plasma from penetrating into the hole.

[0077] For example, the density of the second portion 22 is higher than the density of the first portion 21. Furthermore, for example, the hardness of the second portion 22 is higher than the hardness of the first portion 21.

[0078] During maintenance or handling of the semiconductor manufacturing equipment member, the vicinity of the hole 13 (and the through hole 313 described later) may come into physical contact with another member (for example, a jig such as a pin or a sponge-like cleaning pad). Such physical contact may cause wear, damage, or peeling around the hole 13 (and the through hole 313), resulting in the generation of particles. For example, during handling of the semiconductor manufacturing equipment member, a jig such as a positioning pin may be inserted into the hole 13. The second portion 22 provided in the hole 13 is more likely to come into physical contact with such a jig than the first portion 21. Furthermore, during maintenance of the semiconductor manufacturing equipment member, for example, the surface of the first surface 11 is cleaned, and the first portion 21 and the second portion 22 may come into contact with a member such as a cleaning pad. At this time, due to the shape of the hole 13, the force applied from the cleaning pad to the second portion 22 provided in the hole 13 may be greater than the force applied from the cleaning pad to the first portion 21 on the first surface 11. The contact area between the cleaning pad and the semiconductor manufacturing equipment component is generally smaller in the second portion 22 located on the inclined surface than in the first portion 21 located on the flat surface. Therefore, when a constant force is applied to the cleaning pad, the force per unit area is larger in the second portion 22 because the contact area is smaller.

[0079] In contrast, since the density of the second portion 22 is relatively high, it is possible to prevent damage or peeling of the second portion 22 due to physical contact during maintenance or handling of the semiconductor manufacturing equipment member. Therefore, it is possible to further prevent the generation of particles. Furthermore, since the hardness of the second portion 22 is relatively high, it is possible to prevent damage or peeling of the second portion 22 due to physical contact during maintenance or handling of the semiconductor manufacturing equipment member. Therefore, it is possible to further prevent the generation of particles.

[0080] 3(a) to 3(c) are cross-sectional views illustrating a part of another semiconductor manufacturing equipment member according to the first embodiment. 3(a) to 3(c) are different from the semiconductor manufacturing equipment member 120 described with reference to FIGS. 1 and 2 in the shape of the hole 13. Other than this, the semiconductor manufacturing equipment members 120a to 120c are similar to the semiconductor manufacturing equipment member 120. In the semiconductor manufacturing equipment member 120a shown in Fig. 3(a), the first hole portion 13a and the third hole portion 13c are each linear in a cross section parallel to the Z direction. In Fig. 3(a), the extension direction of the first hole portion 13a and the extension direction of the third hole portion 13c are not collinear but non-parallel in a cross section parallel to the Z direction. For example, the angle θ1 formed between the third hole portion 13c and the Z direction is smaller than the angle θ2 formed between the first hole portion 13a and the Z direction.

[0081] In the semiconductor manufacturing equipment member 120a, in a cross section parallel to the Z direction, the boundary 15 where the first hole portion 13a and the third hole portion 13c meet is a corner. However, in the cross section of FIG. 3(a), the boundary 15 may be rounded and curved, and may have a curvature.

[0082] In the semiconductor manufacturing equipment member 120b shown in FIG. 3(b), in a cross section parallel to the Z direction, the third hole portion 13c is linear, and the first hole portion 13a is curved. For example, the first hole portion 13a has a first region 16a in contact with the first surface 11 and a second region 16b in contact with the third hole portion 13c. In the cross section of FIG. 3(b), the first region 16a and the second region 16b are each linear. The first region 16a and the second region 16b may also be curved.

[0083] In the example of Fig. 3(b), the extension direction of the first region 16a and the extension direction of the second region 16b are not collinear but non-parallel. For example, the angle θ3 formed between the second region 16b and the Z direction is smaller than the angle θ4 formed between the first region 16a and the Z direction. In the example of Fig. 3(b), the extension direction of the second region 16b and the extension direction of the third hole portion 13c are collinear.

[0084] In the semiconductor manufacturing equipment member 120b, in a cross section parallel to the Z direction, the boundary 16c where the first region 16a and the second region 16b meet is a corner. However, in the cross section of FIG. 3(b), the boundary 16c may be rounded and curved, and may have a curvature.

[0085] In the semiconductor manufacturing equipment member 120c shown in FIG. 3(c), the first hole portion 13a has a first region 16a and a second region 16b, and the boundary 16c between them is a corner. The boundary 15 between the first hole portion 13a and the third hole portion 13c is also a corner. The boundary 15 and the boundary 16c may be rounded and curved, and may have a curvature. As described above, the cross-sectional shape of the hole 13 may be bent or curved as appropriate.

[0086] To evaluate the arithmetic mean height Sa, a laser microscope is used to measure the arithmetic mean height Sa of the surface to be evaluated. This arithmetic mean height Sa is specified in the international standard ISO025178 (JISB0681) for three-dimensional surface texture.

[0087] The laser microscope used is a VK-X1000 manufactured by KEYENCE. The magnification of the objective lens is 1000 times. The S-filter is set to 2.5 μm or 0.8 μm, and the L-filter is set to 0.5 mm.

[0088] The arithmetic mean height is a three-dimensional extension of the two-dimensional arithmetic mean roughness Ra, and is a three-dimensional roughness parameter (a three-dimensional height direction parameter). Specifically, the arithmetic mean height Sa is the volume enclosed by the surface shape curved surface and the mean plane divided by the measured area. If the mean plane is the xy plane, the vertical direction is the z axis, and the measured surface shape curve is z(x, y), the arithmetic mean height Sa is defined by the following equation. Here, "A" in equation (1) is the measured area.

number

[0089] The density of the ceramic layer 20 indicates the size of the gaps (at the nano level) between the particles that make up the film. The density of the ceramic layer 20 (the density of the first portion 21, the second portion 22, and the third portion 23 described below) can be evaluated by the luminance Sa calculated by, for example, the method described in Japanese Patent No. 6597922. In this embodiment, a high density corresponds to a low luminance Sa.

[0090] In the embodiment, the surface hardness of the ceramic layer 20 or the substrate 10 (such as the hardness of the first portion 21, the second portion 22, the first hole region 313a, and the third hole region 313c described below) can be evaluated by the method specified in ISO 14577. Specifically, the hardness of the surface to be evaluated is measured by a nanoindentation test. A Berkovich indenter is used, and the indentation depth is set to a fixed value of 200 nm, to measure the indentation hardness (HIT). The HIT measurement points on the surface to be evaluated are selected to exclude scratches and dents. More preferably, the surface to be evaluated is a polished, smooth surface. At least 25 points should be measured. The average HIT value measured at 25 or more points is defined as the hardness in the embodiment. Other test and analysis methods, procedures for verifying the performance of the test equipment, and conditions required for standard reference samples are in accordance with ISO 14577.

[0091] In an embodiment, high plasma corrosion resistance corresponds to a small arithmetic mean height Sa of the surface after a standard plasma resistance test. The standard plasma resistance test is performed, for example, as follows: Plasma is irradiated onto the surface of an evaluation object, such as a ceramic layer or a substrate. An inductively coupled plasma reactive ion etching apparatus (Muc-21 Rv-Aps-Se, manufactured by Sumitomo Precision Products Co., Ltd.) is used as the plasma etching apparatus. The plasma etching conditions are as follows: ICP output: 1500 W, bias output: 750 W, process gas: a mixture of 100 ccm of CHF3 gas and 10 ccm of O2 gas, pressure: 0.5 Pa, and plasma etching time: 1 hour. The state of the surface of the evaluation object after plasma irradiation is photographed using a laser microscope. Specifically, a laser microscope "OLS4500 / Olympus" was used, and the objective lens was an MPLAPON100xLEXT (numerical aperture 0.95, working distance 0.35 mm, focal spot diameter 0.52 μm, measurement area 128 × 128 μm), with a magnification of 100x. The λc filter for removing waviness components was set to 25 μm. Measurements were taken at three arbitrary locations, and the average value was taken as the arithmetic mean height Sa. Additionally, reference was made to ISO 25178, the international standard for three-dimensional surface texture, as appropriate. In one embodiment of the present invention, the arithmetic mean height Sa of the surface of the ceramic layer or substrate after the "standard plasma resistance test" is preferably 0.060 or less, more preferably 0.030 or less.

[0092] The method for calculating the angles θα and θβ in this specification will be described with reference to FIGS. 4(a) to 4(c). 4(a) to 4(c) are cross-sectional views illustrating a part of the substrate according to the first embodiment.

[0093] The substrate 10a shown in FIG. 4(a) is similar to the substrate 10 described with reference to FIG. 2. The first surface 11 extends along the XY plane. The second hole portion 13b extends along the Z direction. In this example, the inclined surface 13ac connecting the first surface 11 and the second hole portion 13b is linear in a cross section parallel to the Z direction. In a cross section parallel to the Z direction, the inclined surface 13ac extends linearly from the end e1 of the first surface 11 to the end e2 of the second hole portion 13b. The end e1 is the point where the first surface 11 contacts the inclined surface 13ac, and the end e2 is the point where the second hole portion 13b contacts the inclined surface 13ac.

[0094] In a cross section parallel to the Z direction, when a portion P1 of the inclined surface 13ac that is continuous with the first surface 11 is linear, the angle θα is the angle between the first surface 11 and the portion P1. In a cross section parallel to the Z direction, when a portion P2 of the inclined surface 13ac that is continuous with the second hole portion 13b is linear, the angle θβ is the angle between the second hole portion 13b and the portion P2. In the example of FIG. 4(a), the angle θα is the angle formed by the first surface 11 and the line segment connecting the end e1 and the end e2, and the angle θβ is the angle formed by the second hole portion 13b and the line segment connecting the end e1 and the end e2. The angles θα and θβ are angles within the substrate 10 and are 180° or less.

[0095] As shown in FIGS. 4(b) and 4(c), when the portions P1 and P2 are curved in a cross section parallel to the Z direction, the angles θα and θβ are calculated as follows. The substrate 10b shown in FIG. 4(b) differs from the substrate 10a in the shape of the inclined surface 13ac. In the substrate 10b, in a cross section parallel to the Z direction, a portion P1 of the inclined surface 13ac that is continuous with the first surface 11 is curved, and a portion that is continuous with the portion P1 is linear. In this case, the angle θα is the angle formed by the first surface 11 and the line segment L1, as shown in FIG. 4(b). The line segment L1 is a line segment connecting the end e1 and the end e4, and the end e4 is the endpoint of the linear portion of the inclined surface 13ac that is continuous with the portion P1. In addition, in the substrate 10b, in a cross section parallel to the Z direction, a portion P2 of the inclined surface 13ac that is continuous with the second hole portion 13b is curved, and a portion that is continuous with the portion P2 is linear. In this case, the angle θβ is the angle formed by the second hole portion 13b and the line segment L2, as shown in FIG. 4(b). Line segment L2 connects end e2 and end e3, and end e3 is the endpoint of a linear portion of inclined surface 13ac that is continuous with portion P2. In this example, inclined surface 13ac, a linear portion P3 is formed between portions P1 and P2, and end e3 of portion P3 is the point where portion P3 meets portion P1, and end e4 of portion P3 is the point where portion P3 meets portion P2.

[0096] The substrate 10c shown in FIG. 4(c) differs from the substrate 10a in the shape of the inclined surface 13ac. In the substrate 10c, the inclined surface 13ac is curved in a cross section parallel to the Z direction. In this case, the angle θα is the angle formed by the first surface 11 and the line segment L3 connecting the end e1 and the end e2, as shown in FIG. 4(c). In addition, the angle θβ is the angle formed by the second hole portion 13b and the line segment L3, as shown in FIG. 4(c).

[0097] The substrate 10 may be any of metal, ceramic, glass, plastic, and a combination thereof. The substrate 10 is preferably metal or ceramic. The metal may be aluminum or an aluminum alloy whose surface has been anodized (anodized). The ceramic may be aluminum oxide (alumina), aluminum nitride, or the like.

[0098] The ceramic layer 20 includes, for example, polycrystalline ceramics. The ceramic layer 20 is a layer whose main component is ceramic. The ceramic layer 20 includes, for example, at least one element selected from the group consisting of oxides of rare earth elements, fluorides of rare earth elements, and oxyfluorides of rare earth elements. Examples of rare earth elements include at least one element selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. More specifically, the ceramic layer 20 includes an oxide of yttrium (YO, Y). α O β (non-stoichiometric composition), yttrium oxyfluorides (YOF, Y5O4F7, Y6O5F8, Y7O6F9 and Y 17 O 14 F 23 ), (YO 0.826 F 0.17 )F 1.174 , YF3, Er2O3, Gd2O3, Nd2O3, Y3Al5O 12 , Y4Al2O9, Y2O3-ZrO2, Er3Al5O 12 , Gd3Al5O 12 , Er4Al2O9, ErAlO3, Gd4Al2O9, GdAlO3, Nd3Al5O 12 , Nd4Al2O9, and NdAlO3. The ceramic layer 20 may contain at least one selected from the group consisting of Fe, Cr, Zn, and Cu. For example, the ceramic layer 20 contains yttrium and at least one of fluorine and oxygen, and is mainly composed of, for example, yttrium oxide (Y2O3), yttrium fluoride (YF3), or yttrium oxyfluoride (YOF). As used herein, the term "major component" refers to a component that accounts for more than 50%, preferably 70% or more, more preferably 90% or more, even more preferably 95% or more, and most preferably 100%. Here, "%" refers to, for example, mass %.

[0099] Alternatively, the ceramic layer 20 may be made of a material other than oxide, fluoride, or oxyfluoride, specifically, a compound containing Cl element or Br element (chloride, bromide).

[0100] In the semiconductor manufacturing equipment member 120, the ceramic layer 20 may be made of only polycrystalline ceramics, or may contain polycrystalline ceramics and amorphous ceramics.

[0101] In the ceramic layer 20, the average crystallite size of the polycrystalline ceramic is 3 nm or more and 50 nm or less. The upper limit is preferably 30 nm, more preferably 20 nm, and even more preferably 15 nm. The lower limit is preferably 5 nm.

[0102] The "average crystallite size" can be determined by the following method. First, a transmission electron microscope (TEM) image is taken at a magnification of 400,000 or more. The average crystallite size is calculated from the average diameter of 15 crystallites in this image, approximated as a circle. If the sample thickness during FIB processing is made sufficiently thin, about 30 nm, the crystallites can be more clearly identified. The magnification can be appropriately selected, for example, from 400,000 to 2,000,000 times.

[0103] In the manufacturing procedure for the semiconductor manufacturing equipment member according to the embodiment, first, a substrate 10 having holes 13 formed therein is prepared. Then, the shape of the substrate 10 is adjusted by an appropriate means. For example, the substrate 10 is subjected to at least one of blasting, physical polishing, chemical mechanical polishing, lapping, and chemical polishing. This makes it possible to control the arithmetic mean height Sa (surface roughness) and shape of the first surface 11 and the holes 13 (first hole portion 13a, second hole portion 13b, and third hole portion 13c).

[0104] Thereafter, the ceramic layer 20 is formed on the substrate 10 . After the ceramic layer 20 is formed, it is subjected to finish polishing. For polishing, at least one of blasting, physical polishing, chemical-mechanical polishing, lapping, and chemical polishing can be used. This makes it possible to control, for example, the arithmetic mean height Sa and shape of the ceramic layer 20 (the surface 21s of the first portion 21 and the surface 22s of the second portion 22), the second hole portion 13b, and the third hole portion 13c.

[0105] The ceramic layer 20 can be formed on the substrate 10 by, for example, thermal spraying, CVD, ALD (Atomic Layer Deposition), PVD (Physical Vapor Deposition), or aerosol deposition.

[0106] When forming the ceramic layer 20 on the substrate 10 by, for example, aerosol deposition, thermal spraying, CVD, or PVD, a mask such as tape may be placed over the portions that will become the third hole portions 13c, and then a film that will become the ceramic layer 20 may be formed. By removing the mask after film formation, the second hole portions 13b and the third hole portions 13c are formed without the ceramic layer 20 and are exposed. Alternatively, the film may be formed without a mask, and then parts of the film may be removed by polishing or the like to form the exposed second hole portions 13b and the third hole portions 13c.

[0107] Depending on the method for forming the ceramic layer 20, it may be more difficult to form the ceramic layer 20 on the third hole portions 13c, which are the inner circumferential surfaces 13s of the holes 13, than on the first surface 11. That is, in a method for forming a ceramic layer by supplying raw material particles to the substrate 10 from the first surface 11 side (e.g., by collision), such as PVD, thermal spraying, or aerosol deposition, the third hole portions 13c are spaced apart from the first surface 11 and inclined relative to the first surface 11. For example, the raw material particles may reach the third hole portions 13c in a state other than a flat surface, making it difficult for them to reach the third hole portions 13c. In such a case, if the ceramic layer 20 is formed in the third hole portions 13c, the quality (e.g., density, hardness, etc.) of the ceramic layer 20 formed on the third hole portions 13c may be lower than the quality of the ceramic layer 20 formed on the first surface 11. Parts of the ceramic layer 20 that are low quality and fragile may be more likely to detach from the substrate and become a source of particles. By not providing the ceramic layer 20 in the third hole portion 13c, it is possible to reduce the generation of particles.

[0108] As with the third hole portion 13c, it may be difficult to form a ceramic layer on the inner wall (vertical surface) of the hole 13. When a ceramic layer is provided inside the hole 13, the properties (e.g., density and film thickness) of the ceramic layer inside the hole 13 may be inferior to the properties of the ceramic layer provided on the first surface of the substrate, and particles may be generated when the fragile ceramic layer inside the hole 13 is corroded by plasma. Furthermore, for example, the mechanical properties (e.g., strength, hardness, or toughness against external forces) of the ceramic layer with inferior properties are inferior to the mechanical properties of the substrate. Therefore, there is a risk of particles being generated by physical impact or contact during handling or maintenance of semiconductor manufacturing equipment components.

[0109] For example, when the ceramic layer 20 is formed by PVD, thermal spraying, or aerosol deposition, a film is unlikely to be formed in the vertical second hole portion 13b, and therefore, by making the second hole portion 13b long, film formation inside the hole can be suppressed.

[0110] In the aerosol deposition method, fine particles of material are collided with a substrate, and the impact of the collision bonds the particles on the substrate, forming a layered structure. On the other hand, in the aerosol deposition method, if the surface of the substrate on which the fine particles of material collide is rough, the fine particles are less likely to bond and accumulate on the substrate, making it difficult to form a layered structure. In this embodiment, the arithmetic mean height Sa of the third hole portion 13c is relatively large, which more reliably prevents a brittle ceramic layer from being formed on the third hole portion 13c by the aerosol deposition method. Therefore, particle generation can be suppressed.

[0111] In this way, when the aerosol deposition method is used, for example, by controlling the arithmetic mean height Sa of the third hole portions 13c, it is possible to prevent a ceramic layer from being formed on the third hole portions 13c. When the aerosol deposition method is used, a process such as masking before film formation can be omitted, making it easier to manufacture semiconductor manufacturing equipment components.

[0112] The aerosol deposition method involves spraying an aerosol, in which fine particles containing brittle materials are dispersed in a gas, from a nozzle toward a substrate, causing the fine particles to collide with the substrate, such as metal, glass, ceramics, or plastic. The impact of the collision causes the brittle material fine particles to deform or fracture, bonding them together, and directly forming a layered structure (also called a membrane-like structure) made of the constituent material of the fine particles on the substrate.

[0113] In this example, an aerosol, which is a mixture of fine particles of a ceramic material with excellent particle resistance, such as yttria, and a gas, is sprayed toward the substrate 10 to form a layered structure (ceramic layer 20).

[0114] The aerosol deposition method does not require any special heating or cooling means, and can form a layered structure at room temperature, resulting in a layered structure with mechanical strength equal to or greater than that of a fired body. Furthermore, by controlling the conditions for colliding the fine particles, as well as the shape and composition of the fine particles, it is possible to vary the density, microstructure, mechanical strength, electrical properties, and other properties of the layered structure in a variety of ways.

[0115] In this specification, the term "polycrystalline" refers to a structure formed by the joining and accumulation of crystalline particles. A single crystalline particle essentially constitutes a crystal. The diameter of a crystalline particle is usually 5 nanometers (nm) or more. However, when fine particles are incorporated into a structure without being crushed, the crystalline particle is considered polycrystalline.

[0116] In addition, in this specification, the term "fine particles" refers to particles having an average particle size of 5 micrometers (μm) or less when the primary particles are dense particles, as determined by particle size distribution measurement, scanning electron microscope, etc. When the primary particles are porous particles that are easily crushed by impact, the term refers to particles having an average particle size of 50 μm or less.

[0117] Furthermore, in this specification, the term "aerosol" refers to a solid-gas mixture in which the above-mentioned fine particles are dispersed in a gas such as helium, nitrogen, argon, oxygen, dry air, or a mixture of these gases, and although it may contain some "aggregates," it essentially refers to a state in which the fine particles are dispersed singly. The gas pressure and temperature of the aerosol are arbitrary, but for the formation of a layered structure, it is desirable for the concentration of the fine particles in the gas to be within the range of 0.0003 mL / L to 5 mL / L when the gas is ejected from the outlet, when the gas pressure is converted to 1 atmosphere and the temperature is converted to 20 degrees Celsius.

[0118] The aerosol deposition process is usually carried out at room temperature, and one of its features is that it is possible to form layered structures at temperatures well below the melting point of the particulate material, i.e., at a few hundred degrees Celsius or less. In this specification, "room temperature" refers to a temperature significantly lower than the sintering temperature of ceramics, and essentially refers to an environment of 0 to 100°C, with room temperature of around 20°C±10°C being more common.

[0119] The fine particles constituting the powder that is the raw material for the layered structure are primarily brittle materials such as ceramics or semiconductors, and fine particles of the same material can be used alone or in combination with fine particles of different particle sizes. It is also possible to use a mixture or composite of fine particles of different types of brittle materials. It is also possible to mix fine particles of metal materials or organic materials with brittle material fine particles, or to coat the surface of brittle material fine particles. In all these cases, the main component of the layered structure is the brittle material.

[0120] When composite structures formed using this method are made from crystalline brittle material particles as raw materials, the layered structure portion of the composite structure is a polycrystalline body whose crystal grain size is smaller than that of the raw material particles, and the crystals often have virtually no crystalline orientation. Furthermore, there is virtually no grain boundary layer consisting of a glass layer at the interface between the brittle material crystals. Furthermore, in many cases, the layered structure portion of the composite structure forms an "anchor layer" that penetrates into the surface of the substrate (substrate 10 in this example). A layered structure with this anchor layer formed is formed with extremely high strength and strong adhesion to the substrate.

[0121] The layered structures formed by the aerosol deposition method are clearly different from so-called "green compacts," in which fine particles are packed together by pressure and maintain their shape through physical adhesion, and possess sufficient strength.

[0122] In the aerosol deposition method, the fracture and deformation of the incoming brittle material particles on the substrate can be confirmed by measuring the crystallite (crystalline particle) size of the brittle material particles used as raw material and the resulting brittle material structure using techniques such as X-ray diffraction. In other words, the crystallite size of the layered structure formed by the aerosol deposition method is smaller than that of the raw material particles. On the "fracture surface" or "fracture surface" formed by the fracture and deformation of the particles, a "new surface" is formed, where atoms that were originally inside the particle and bonded to other atoms are exposed. It is thought that these new surfaces, with their high surface energy and activity, bond with the surfaces of adjacent brittle material particles, the new surfaces of adjacent brittle materials, or the surface of the substrate, forming the layered structure.

[0123] Furthermore, if there are an adequate number of hydroxyl groups on the surfaces of the fine particles in the aerosol, local shear stresses that arise when the fine particles collide with each other or between the fine particles and the structure may cause mechanochemical acid-base dehydration reactions, bonding the particles together. The application of continuous external mechanical impact forces causes these phenomena to occur continuously, and the repeated deformation and crushing of the fine particles leads to the progression of bonding and densification, resulting in the growth of a layered structure made of brittle materials.

[0124] For example, when the ceramic layer 20 is formed by an aerosol deposition method, the ceramic layer 20 has a smaller crystallite size and a denser microstructure than a fired ceramic body, a thermal sprayed film, or the like. As a result, the particle resistance of the semiconductor manufacturing equipment member 120 according to the embodiment is higher than that of a fired ceramic body or a thermal sprayed film. Furthermore, the probability that the semiconductor manufacturing equipment member 120 according to the embodiment becomes a particle generation source is lower than the probability that a fired ceramic body, a thermal sprayed film, or the like becomes a particle generation source.

[0125] An example of an apparatus used to manufacture the semiconductor manufacturing equipment member 120 according to the present invention, for example, by an aerosol deposition method, will be described below. The apparatus used for the aerosol deposition method comprises a chamber, an aerosol supply unit, a gas supply unit, an exhaust unit, and piping. Inside the chamber, for example, a stage on which the substrate 10 is placed, a drive unit, and a nozzle are arranged. The drive unit can change the relative positions of the substrate 10 placed on the stage and the nozzle. At this time, the distance between the nozzle and the substrate 10 may be constant or variable. In this example, the drive unit drives the stage, but the drive unit may also drive the nozzle. The drive direction is, for example, the XYZθ direction.

[0126] The aerosol supply unit is connected to the gas supply unit by a pipe. The aerosol supply unit supplies an aerosol, which is a mixture of raw material fine particles and a gas, to the nozzle via the pipe. The device further includes a powder supply unit that supplies raw material fine particles. The powder supply unit may be disposed within the aerosol supply unit or may be disposed separately from the aerosol supply unit. Furthermore, an aerosol forming unit that mixes raw material fine particles and a gas may be provided separately from the aerosol supply unit. A homogeneous structure can be obtained by controlling the supply amount from the aerosol supply unit so that the amount of fine particles sprayed from the nozzle is constant.

[0127] The gas supply unit supplies nitrogen gas, helium gas, argon gas, air, etc. When the gas to be supplied is air, it is preferable to use compressed air with low impurities such as moisture and oil, or to further provide an air treatment unit that removes impurities from the air.

[0128] Next, an example of the operation of an apparatus used for the aerosol deposition method will be described. With the substrate 10 placed on a stage inside the chamber, the pressure inside the chamber is reduced to below atmospheric pressure, specifically to approximately several hundred Pa, using an exhaust unit such as a vacuum pump. Meanwhile, the internal pressure of the aerosol supply unit is set higher than the internal pressure of the chamber. The internal pressure of the aerosol supply unit is, for example, several hundred to several tens of thousands of Pa. The powder supply unit may be at atmospheric pressure. The fine particles in the aerosol are accelerated by the pressure difference between the chamber and the aerosol supply unit so that the injection speed of the raw material particles from the nozzle is in the subsonic to supersonic range (50 to 500 m / s). The injection speed is controlled by the flow rate of the gas supplied from the gas supply unit, the type of gas, the shape of the nozzle, the length and inner diameter of the piping, the exhaust volume of the exhaust unit, and other factors. For example, a supersonic nozzle such as a Laval nozzle can be used as the nozzle. The fine particles in the aerosol injected at high speed from the nozzle collide with the substrate 10, pulverize or deform, and are deposited on the substrate 10 as a structure (ceramic layer 20). By changing the relative positions of the substrate 10 and the nozzle, a composite structure (semiconductor manufacturing equipment member 120) is formed, in which a structure (ceramic layer 20) having a predetermined area is provided on the substrate 10.

[0129] A crushing section may be provided to break up agglomerations of fine particles before they are sprayed from the nozzle. Any method can be selected as the crushing method in the crushing section. Examples include known methods such as mechanical crushing using vibration or collision, static electricity, plasma irradiation, and classification.

[0130] (Second embodiment) 5(a) and 5(b) are cross-sectional views illustrating a part of a semiconductor manufacturing equipment member according to the second embodiment.

[0131] 5(a), the same explanation as for the semiconductor manufacturing equipment member 120 can be applied. However, the arithmetic mean height Sa of the surface of the first portion 21 does not have to be smaller than the arithmetic mean height Sa of the surface of the second portion 22, and may be the same as that of the semiconductor manufacturing equipment member 120. Furthermore, the arithmetic mean height Sa of the third hole portion 13c does not have to be larger than the arithmetic mean height Sa of the surfaces of the first portion 21 and the second portion 22, and may be the same as that of the semiconductor manufacturing equipment member 120.

[0132] As shown in FIG. 5(a), the semiconductor manufacturing equipment member 120d has a composite structure 30. A composite structure refers to a structure including a substrate and a structure (e.g., a layer or a film) provided on the surface of the substrate. The composite structure 30 includes a substrate 10 and a ceramic layer 20. In this example, the composite structure 30 is a laminate of the substrate 10 and the ceramic layer 20. Note that in the embodiment, each of the substrate 10 and the ceramic layer 20 may have a laminate structure including multiple layers.

[0133] As shown in FIG. 5( a), the composite structure 30 has a first main surface 311 and a second main surface 312 opposite to the first main surface 311. For example, the first main surface 311 is the surface 21s of the first portion of the ceramic layer 20, and the second main surface 312 is the second surface 12 of the substrate 10. The composite structure 30 also has at least one through hole 313. The through hole 313 extends in the Z direction and penetrates through the substrate 10 and the ceramic layer 20. For example, one through hole 313 is provided in the center of the composite structure 30. However, the through hole 313 does not have to be located in the center of the composite structure 30, and multiple through holes 313 may be provided.

[0134] The through hole 313 has, for example, a circular shape when viewed along the Z direction. The through hole 313 (inner peripheral surface 313s of the through hole) has a first hole region 313a, a second hole region 313b, and a third hole region 313c. The first hole region 313a, the second hole region 313b, and the third hole region 313c are each exposed and are provided so as to come into contact with plasma. The inner peripheral surface 313s is the inner peripheral surface of the composite structure 30 that defines the through hole 313. The inner peripheral surface 313s faces inward of the through hole 313 and intersects with the XY plane.

[0135] The first hole region 313a is a region of the inner circumferential surface 313s that is located near the first main surface 311 and adjacent to the first main surface 311. The first hole region 313a is continuous with the first main surface 311. The first hole region 313a is located between the first main surface 311 and the second main surface 312 in the Z direction. The first hole region 313a is not parallel to the first main surface 311 but is an inclined surface that intersects with the first main surface 311 and the Z direction. The first hole region 313a may be a surface that extends parallel to the Z direction. In a cross section parallel to the Z direction, the first hole region 313a may be linear or curved. When viewed along the Z direction (i.e., when projected onto the XY plane), the first hole region 313a has, for example, a ring shape surrounded by the first main surface 311.

[0136] The second hole region 313b is located between the first hole region 313a and the second main surface 312 in the Z direction. In other words, the position of the second hole region 313b in the Z direction is between the position of the first hole region 313a in the Z direction and the position of the second main surface 312 in the Z direction. For example, the second hole region 313b is a region of the inner circumferential surface 313s that is located near the second main surface 312 and adjacent to the second main surface 312. The second hole region 313b may be continuous with the second main surface 312. The second hole region 313b extends in the Z direction and is, for example, parallel to the Z direction. The second hole region 313b is, for example, a vertical plane that is approximately perpendicular to the second main surface 312. When viewed along the Z direction, the second hole region 313b has an annular shape that is located inside the first hole region 313a.

[0137] The third hole region 313c is located between the first hole region 313a and the second hole region 313b in the Z direction. In other words, the position of the third hole region 313c in the Z direction is between the position of the first hole region 313a in the Z direction and the position of the second hole region 313b in the Z direction. The third hole region 313c is a region of the inner circumferential surface 313s that is continuous with the first hole region 313a. The third hole region 313c is not parallel to the first surface 11 but is an inclined surface that intersects with the first surface 11 and the Z direction. The third hole region 313c may be a surface extending in the Z direction. In a cross section parallel to the Z direction, the third hole region 313c may be linear or curved. When viewed along the Z direction, third hole region 313c is, for example, annular and surrounded by first hole region 313a, and second hole region 313b is located inside third hole region 313c. Third hole region 313c and second hole region 313b may be continuous.

[0138] 5(a), the first hole region 313a of the through hole 313 is the surface 22s of the second portion 22 of the ceramic layer 20, the second hole region 313b is the second hole portion 13b of the hole 13 in the substrate 10, and the third hole region 313c is the third hole portion 13c of the hole 13 in the substrate 10. A portion of the through hole 313 in the composite structure 30 is at least a portion of the hole 13 in the substrate 10. Specifically, the portion of the through hole 313 is defined by the second hole portion 13b and the third hole portion 13c which define a portion of the hole 13 in the substrate 10.

[0139] The hardness of the third hole region 313c is higher than the hardness of the first hole region 313a. For example, the third hole region 313c is less susceptible to wear than the first hole region 313a. In the example of FIG. 5(a), the hardness of the third hole portion 13c of the substrate 10 is higher than the hardness of the surface 22s of the ceramic layer 20. For example, the hardness of the material of the substrate 10 is higher than the hardness of the material of the ceramic layer 20. This makes it possible to make the hardness of the third hole region 313c higher than the hardness of the first hole region 313a. Specifically, the material of the first portion 21 and the second portion 22 of the ceramic layer 20 can be at least one of an oxide of a rare earth element, a fluoride of a rare earth element, and an oxyfluoride of a rare earth element. The rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. The material of the substrate 10 can be at least one of aluminum oxide (Al2O3), zirconium oxide (ZrO2), and aluminum nitride (AlN).

[0140] The third hole region 313c is located closer to the inside of the through hole 313 than the first hole region 313a. For example, when a jig such as a positioning pin is inserted into the through hole 313 during handling of the semiconductor manufacturing equipment component, the third hole region 313c is more likely to come into physical contact with the jig than the first hole region 313a. Furthermore, for example, when the first hole region 313a and the third hole region 313c come into contact with a cleaning pad during maintenance of the semiconductor manufacturing equipment component, if the angle θβ is smaller than the angle θα, the third hole region 313c may be more susceptible to wear than the first hole region 313a. For example, if the angle θβ is smaller than the angle θα, force may be more likely to concentrate near the corner of the boundary between the third hole region 313c and the second hole region 313b, and the vicinity of the corner of the boundary between the first hole region 313a and the first main surface 311, and the vicinity of the corner may be more susceptible to wear.

[0141] In contrast, in the embodiment, the third hole region 313c has a relatively high hardness, which can prevent damage to the third hole region 313c caused by physical contact during maintenance or handling of the semiconductor manufacturing equipment member, thereby preventing particle generation.

[0142] 5(b) differs from the semiconductor manufacturing equipment member 120d in that the ceramic layer 20 has a third portion 23. In the semiconductor manufacturing equipment member 120e, the third hole region 313c is the surface 23s of the third portion 23. Other than this, the same explanation as for the semiconductor manufacturing equipment member 120d can be applied to the semiconductor manufacturing equipment member 120e.

[0143] The third portion 23 of the ceramic layer 20 is provided on the third hole portion 13c and is in contact with the third hole portion 13c. The third portion 23 is provided continuously from the second portion 22. The surface 23s of the third portion 23 is in direct contact with the plasma. That is, the surface 23s is the surface of the third portion 23 opposite the surface in contact with the third hole portion 13c, and is provided so as to be exposed to the interior of the chamber 110. In this example, the first hole portion 13a and the third hole portion 13c are covered by the ceramic layer 20 and are not in direct contact with the plasma. This can suppress particle generation from the first hole portion 13a and the third hole portion 13c of the hole 13 in the substrate. On the other hand, when the ceramic layer 20 is not provided in the third hole portion 13c, as in the example of FIG. 5(a), it is possible to suppress the formation of a ceramic layer 20 with inferior properties in the third hole portion 13c, thereby further suppressing particle generation from the ceramic layer 20.

[0144] 5(b), the first hole region 313a of the through hole 313 is the surface 22s of the second portion 22 of the ceramic layer 20, the second hole region 313b is the second hole portion 13b of the hole 13 of the substrate 10, and the third hole region 313c is the surface 23s of the third portion 23 of the ceramic layer 20. In this example, a portion of the through hole 313 of the composite structure 30 is at least a portion of the hole 13 of the substrate 10. Specifically, a portion of the through hole 313 is defined by the second hole portion 13b that defines a portion of the hole 13 of the substrate 10.

[0145] In the semiconductor manufacturing equipment member 120e, the hardness of the third hole region 313c is also higher than the hardness of the first hole region 313a. That is, the hardness of the surface 23s of the third portion 23 of the ceramic layer 20 is higher than the hardness of the surface 22s of the second portion 22 of the ceramic layer 20. This makes it possible to prevent damage to the third hole region 313c due to physical contact during maintenance or handling of the semiconductor manufacturing equipment member. This also makes it possible to prevent particle generation.

[0146] For example, the material of third portion 23 is different from the material of second portion 22, and the hardness of the material of third portion 23 is higher than the hardness of the material of second portion 22. This allows the hardness of third hole region 313c to be higher than the hardness of first hole region 313a. For example, the material of third portion 23 can be at least one of an oxide of a rare earth element, a fluoride of a rare earth element, and an oxyfluoride of a rare earth element. The rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. By making the composition of third portion 23 different from the composition of second portion 22, the hardness of third portion 23 can be made different from the hardness of second portion 22.

[0147] By using masking such as tape, the film that will become the second portion 22 and the film that will become the third portion 23 can be provided in the desired areas. For example, with a mask provided on the first hole portion 13a or the second portion 22, the film that will become the third portion 23 is formed on the third hole portion 13c. Alternatively, with a mask provided on the third hole portion 13c or the third portion 23, the film that will become the second portion 22 is formed on the first hole portion 13a. This allows separate films to be formed on the first hole portion 13a and the third hole portion 13c, and the material of the third portion 23 can be made different from the material of the second portion 22. This allows the hardness of the third portion 23 to be made different from the hardness of the second portion 22. Separate films may be provided on the first hole portion 13a and the third hole portion 13c without using masking, by removing a portion of the film by polishing or the like after the film formation.

[0148] For example, the density of the third portion 23 is higher than that of the second portion 22. This allows the hardness of the third hole region 313c to be higher than that of the first hole region 313a. For example, the second portion 22 and the third portion 23 can be formed by forming a single film that will become the second portion 22 and the third portion 23 and then performing a surface modification treatment on a portion of the film. One example of the surface modification treatment is a method in which energy is applied to a range from the surface of the film to a predetermined depth to melt it, and then that range is cooled to form a melt-solidified film. The melt-solidified film formed by the surface modification treatment has fewer voids and a flatter, denser surface than a region that has not been subjected to the surface modification treatment. The surface modification treatment may be a method that can selectively heat-melt the surface. Specifically, the surface modification treatment may be a laser annealing treatment or a plasma jet treatment. For example, the region that has been subjected to the surface modification treatment becomes the third portion 23, and the region that has not been subjected to the surface modification treatment becomes the second portion 22.

[0149] The film-forming conditions for the third portion 23 and the second portion 22 may be different. This allows the density of the third portion 23 to be different from the density of the second portion 22, or the hardness of the third portion 23 to be different from the hardness of the second portion 22. When using an aerosol deposition method, the film-forming conditions include the flow rate, flow velocity, or gas type of the gas supplied from the gas supply unit. The film-forming condition may also be the angle at which the aerosol ejected from the nozzle collides with the substrate.

[0150] In this embodiment, the ceramic layer 20 does not necessarily have to be provided on the first hole portions 13a and the third hole portions 13c. The first hole region 313a may be the surface of the substrate 10. The hardness of a portion of the substrate surface may be adjusted appropriately by surface treatment (for example, coating or modification treatment).

[0151] 6(a) and 6(b) are cross-sectional views illustrating a portion of a semiconductor manufacturing equipment member. 6(a) and 6(b) each show a substrate 10 of the semiconductor manufacturing equipment member. The configuration of the substrate 10 shown in FIG. 6(a) is the same as the substrate 10 described above with reference to FIG. 2. In the substrate 10 of FIG. 6(a), the angle θα is 150°.

[0152] In the substrate 10 shown in Figure 6(b), the angle θα is 120°. The substrate 10 in Figure 6(b) differs from the substrate 10 in Figure 6(a) in the shape (length and angle) of the inclined surface 13ac and the length of the second hole portion 13b. Other than this, the configuration of the substrate 10 in Figure 6(b) is similar to that of the substrate 10 in Figure 6(a).

[0153] In the substrate 10 shown in FIG. 6(a), the angle θα is larger than the angle θβ. In the substrate 10 shown in FIG. 6(b), the angle θα is smaller than the angle θβ. The length Ln in the Z direction of the second hole portion 13b in the substrate 10 in FIG. 6(a) is longer than the length Ln in the Z direction of the second hole portion 13b in the substrate 10 in FIG. 6(b). Thus, if the thickness of the substrate 10 is constant, it is easy to increase the length of the second hole portion 13b in the Z direction when the angle θα is larger than the angle θβ.

[0154] 6(a) and 6(b) show a proximity circle PC. The proximity circle PC is close to the edge portion (boundary 14) formed by the first surface 11 and the inclined surface 13ac. The proximity circle PC is a circle tangent to the first surface 11 and the inclined surface 13ac in a cross section parallel to the Z direction as shown in FIGS. 6(a) and 6(b). The distance (distance t2) between the X-direction position of the center p of the proximity circle PC and the X-direction position of the boundary 14 in FIG. 6(a) is the same as the distance (distance t2) between the X-direction position of the center p of the proximity circle PC and the X-direction position of the boundary 14 in FIG. 6(b). In other words, when the X-direction positions of the boundaries 14 in FIGS. 6(a) and 6(b) are aligned, the X-direction positions of the centers p are aligned. In this case, the width t of the inclination shown in FIGS. 6(a) and 6(b) is constant. That is, the width t in Figure 6(a) and the width t in Figure 6(b) are equal to each other. If the radius R of the proximity circle PC shown in Figure 6(a) is r, the radius R of the proximity circle PC shown in Figure 6(b) is 0.47r.

[0155] Here, the width t of the inclination is the sum of the predetermined distance t1 and the distance t2. In FIG. 6(a), the predetermined distance t1 is the distance in the X direction from the boundary 14 to the second hole portion 13b. The predetermined distance t1 is constant. That is, the predetermined distance t1 in FIG. 6(a) and the predetermined distance t1 in FIG. 6(b) are equal to each other. The width t of the inclination is the distance along the X direction between the center p of the proximity circle PC and the second hole portion 13b in FIG. 6(a).

[0156] FIG. 7 is a graph illustrating stress in a semiconductor manufacturing equipment member. FIG. 7 illustrates the calculation results of the relationship between the radius R of the proximity circle PC and the stress S generated in a semiconductor manufacturing equipment component. That is, FIG. 7 shows the change in stress S when the radius R of the proximity circle PC of the substrate 10 is changed, as in FIGS. 6(a) and 6(b), in a semiconductor manufacturing equipment component similar to that shown in FIG. 2. More specifically, the angle θα is changed while the distance t2 (the position in the X direction of the center p of the proximity circle PC and the position in the X direction of the boundary 14) and the thickness of the substrate 10 are kept constant. The stress S generated in the ceramic layer 20 formed on the boundary 14 is calculated when the radius R, the length of the second hole portion 13b in the Z direction, and the shape (length and angle) of the inclined surface 13ac are changed. Note that the angle θα is assumed to be greater than 90°, and the radius R is greater than 0.27r.

[0157] The stress S is a calculation result of the stress (e.g., residual stress) generated in the connection portion between the first portion 21 and the second portion 22 (i.e., the ceramic layer 20 formed on the boundary 14). For example, the magnitude of the stress S corresponds to the electric field strength on the surface of the ceramic layer 20 on the boundary 14.

[0158] As the angle θα increases, the radius R of the proximity circle PC also increases. As shown in FIG. 7, as the radius R increases, the stress S decreases. For example, as shown in FIG. 6(a), when the angle θα is 150°, the radius R is r, and the stress S at that time is approximately s. As shown in FIG. 6(b), when the angle θα is 120°, the radius R is 0.47r, and the stress S at that time is calculated to be approximately 1.7s. That is, in the example of FIG. 6(a), stress concentration can be suppressed compared to the example of FIG. 6(b), and the stress is reduced by approximately 1.7 times. In other words, by increasing the angle θα, stress concentration can be alleviated. The angle θα is, for example, 150° or more, more preferably 160° or more.

[0159] For example, the inclined surface 13ac is linear in a cross section parallel to the Z direction. If the inclined surface 13ac is curved in a cross section parallel to the Z direction, an electric field may concentrate on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac, which may result in the generation of particles. In contrast, if the inclined surface 13ac is linear in a cross section parallel to the Z direction, the electric field concentration on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac can be further alleviated.

[0160] For example, when the radius R is 0.3r, the stress S is about 2.5s, and when the radius R is 0.7r, the stress S is about 1.2s.

[0161] Fig. 8 is a table illustrating evaluation of particle resistance in semiconductor manufacturing equipment members. Samples 1 to 5 are each similar to the semiconductor manufacturing equipment member 120 described with reference to Fig. 2. As shown in Fig. 8, in Samples 1 to 5, at least one of the arithmetic mean height Sa of the first portion 21, the arithmetic mean height Sa of the second portion 22, and the arithmetic mean height Sa of the third hole portion 13c is changed. In Samples 1 to 5, all parameters (e.g., angle θα, angle θβ, thickness of base material 10, etc.) other than the arithmetic mean height Sa are constant.

[0162] In sample 1, the arithmetic mean height Sa of the first portion 21 is 0.03 μm, the arithmetic mean height Sa of the second portion 22 is 0.06 μm, and the arithmetic mean height Sa of the third hole portion 13c is 0.2 μm. In sample 2, the arithmetic mean height Sa of the first portion 21 is 0.03 μm, the arithmetic mean height Sa of the second portion 22 is 0.12 μm, and the arithmetic mean height Sa of the third hole portion 13c is 0.5 μm. In sample 3, the arithmetic mean height Sa of the first portion 21 is 0.06 μm, the arithmetic mean height Sa of the second portion 22 is 0.35 μm, and the arithmetic mean height Sa of the third hole portion 13c is 0.3 μm. In sample 4, the arithmetic mean height Sa of the first portion 21 is 0.08 μm, the arithmetic mean height Sa of the second portion 22 is 0.81 μm, and the arithmetic mean height Sa of the third hole portion 13c is 0.85 μm. In sample 5, the arithmetic mean height Sa of the first portion 21 is 0.15 μm, the arithmetic mean height Sa of the second portion 22 is 0.41 μm, and the arithmetic mean height Sa of the third hole portion 13c is 0.2 μm.

[0163] 8 shows the ratios R21 and R31 for each sample. The ratio R21 is the ratio of the arithmetic mean height Sa of the second portion 22 to the arithmetic mean height Sa of the first portion 21. The ratio R31 is the ratio of the arithmetic mean height Sa of the third hole portion 13c to the arithmetic mean height Sa of the first portion 21.

[0164] In addition, Figure 8 indicates the particle resistance of each sample with "◎", "◯", or "×". To evaluate particle resistance, the sample is irradiated with plasma, and the difference between the arithmetic mean height Sa before plasma irradiation and the short-term mean height Sa after plasma irradiation is evaluated. The plasma irradiation conditions are as follows: The plasma etching device used is an inductively coupled plasma reactive ion etching device (Muc-21 Rv-Aps-Se, manufactured by Sumitomo Precision Products Co., Ltd.). The plasma etching conditions are as follows: the power output of the ICP (Inductively Coupled Plasma) is 1500 W, the bias output is 750 W, the process gas is a mixture of 100 ccm of CHF3 gas and 10 ccm of O2 gas, the pressure is 0.5 Pa, and the plasma etching time is 1 hour.

[0165] "◎" indicates that the change in arithmetic mean height Sa due to plasma irradiation is small in all of the first portion 21, the second portion 22, and the third hole portion 13c. "◯" indicates that the change in arithmetic mean height Sa due to plasma irradiation is small in two or more of the first portion 21, the second portion 22, and the third hole portion 13c. "×" indicates particle resistance other than "◎" and "◯".

[0166] As already described, for example, the arithmetic mean height Sa of the surface 22s of the second portion 22 is two to ten times, more preferably five times, the arithmetic mean height Sa of the surface 21s of the first portion 21. In other words, the ratio R21 is 2.0 to 10, more preferably 5.0 or less. As shown in FIG. 8, the particle resistance of Sample 3, whose ratio R21 is 5.8, is higher than the particle resistance of Sample 4, whose ratio R21 is 10.1. The particle resistance of Sample 1, whose ratio R21 is 2.0, and that of Sample 2, whose ratio R21 is 4.0, are higher than the particle resistance of Sample 3.

[0167] As already mentioned, for example, the arithmetic mean height Sa of the third hole portions 13c is greater than twice the arithmetic mean height Sa of the surface 21s of the first portion 21. In other words, the ratio R31 is greater than 2.0. As shown in Fig. 8, the particle resistance of Sample 1, whose ratio R31 is 6.7, Sample 2, whose ratio R31 is 16.7, and Sample 3, whose ratio R31 is 5.0, is higher than the particle resistance of Sample 5, whose ratio R31 is 1.3.

[0168] It should be noted that each cross section of the semiconductor manufacturing equipment member described with reference to FIGS. 2 to 6(b) may be a cross section passing through the center of the hole 13 in the XY plane.

[0169] In this specification, "vertical" and "parallel" do not only mean strictly vertical and strictly parallel, but also include variations in the manufacturing process, and may mean substantially vertical and substantially parallel.

[0170] The above describes the embodiments of the present invention. However, the present invention is not limited to these descriptions. Design modifications made by a person skilled in the art to the above-described embodiments are also included within the scope of the present invention as long as they incorporate the features of the present invention. For example, the shape, dimensions, materials, arrangement, installation form, etc. of each element of a semiconductor manufacturing equipment component, semiconductor manufacturing equipment, etc. are not limited to those exemplified, and can be modified as appropriate. Furthermore, the elements of each of the above-described embodiments can be combined to the extent technically possible, and such combinations are also included within the scope of the present invention as long as they include the features of the present invention. [Explanation of symbols]

[0171] 10, 10a~10c base material, 11 first surface, 12 second surface, 13 hole, 13a first hole, 13ac slope, 13b second hole, 13c third hole, 13s inner peripheral surface, 14, 15 boundary, 16a first region, 16b second region, 16c boundary, 17 boundary, 20 ceramic layer, 21 first part, 21s surface, 22 second part, 22s surface, 23 third part, 23s surface, 30 composite structure, θα, θβ, θ1~θ4 angle, 100 semiconductor manufacturing equipment, 110 chamber, 111 inner wall, 111b lower inner wall, 111u upper inner wall, 120, 120a to 120e: member for semiconductor manufacturing equipment, 160: electrostatic chuck, 191: region, 210: wafer, 221: particle, 311: first main surface, 312: second main surface, 313: through hole, 313a: first hole region, 313b: second hole region, 313c: third hole region, 313s: inner peripheral surface, L1 to L3: line segment, T21, T22: thickness, e1 to e4: end, P1 to P3: portion

Claims

1. A semiconductor manufacturing equipment member used in a chamber of the semiconductor manufacturing equipment, a substrate including a first surface, a second surface opposite the first surface, and at least one hole extending through the first surface and the second surface; a ceramic layer provided on the substrate; Equipped with The hole is a first hole portion that is continuous with the first surface and is inclined with respect to a first direction from the first surface toward the second surface; a second hole portion located between the second surface and the first hole portion in the first direction and extending along the first direction; a third hole portion located between the first hole portion and the second hole portion in the first direction and inclined with respect to the first direction; and the ceramic layer has a plasma erosion resistance greater than the plasma erosion resistance of the substrate; the ceramic layer includes a first portion provided so as to be exposed on the first surface and a second portion provided above the first hole portion; The third hole portion is provided so as to be exposed.

2. the hole has an inclined surface including the first hole portion and the third hole portion, 2. The semiconductor manufacturing equipment member according to claim 1, wherein the inclined surface is linear in a cross section parallel to the first direction.

3. the hole has an inclined surface including the first hole portion and the third hole portion, 2. The semiconductor manufacturing equipment member according to claim 1, wherein an angle formed between said first surface and said inclined surface is larger than an angle formed between said second hole portion and said inclined surface.

4. 4. The semiconductor manufacturing equipment member according to claim 1, wherein the second portion is thinner than the first portion.

5. 5. The semiconductor manufacturing equipment member according to claim 1, wherein the density of the second portion is higher than the density of the first portion.

6. 6. The semiconductor manufacturing equipment member according to claim 1, wherein the second portion has a higher hardness than the first portion.

7. 7. The semiconductor manufacturing equipment member according to claim 1, wherein the ceramic layer includes polycrystalline ceramics.

8. 8. The semiconductor manufacturing equipment member according to claim 7, wherein the average crystallite size of the polycrystalline ceramic calculated from a TEM image at a magnification of 400,000 to 2,000,000 is 3 to 50 nanometers.

9. 9. The semiconductor manufacturing equipment member according to claim 1, wherein the ceramic layer contains at least one selected from the group consisting of an oxide of a rare earth element, a fluoride of a rare earth element, and an oxyfluoride of a rare earth element.

10. 10. The semiconductor manufacturing equipment member according to claim 9, wherein the rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.

11. 11. The semiconductor manufacturing equipment member according to claim 1, wherein the substrate comprises ceramic.

12. The semiconductor manufacturing equipment member according to claim 11 , wherein the substrate comprises alumina.

13. a chamber; A semiconductor manufacturing equipment member according to any one of claims 1 to 12, A semiconductor manufacturing apparatus comprising: the chamber has an inner wall that defines a space in which plasma is generated; The ceramic layer of the semiconductor manufacturing equipment member forms at least a part of the inner wall.

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