Substrate treatment method and substrate treatment apparatus

Abstract

To provide a technology capable of suppressing occurrence of fluttering at a substrate in rinse treatment after SPM treatment.SOLUTION: A substrate treatment method includes: holding and rotating a substrate; to the rotating substrate, discharging a mixed fluid generated by mixing SPM liquid obtained by mixing sulfuric acid with hydrogen peroxide solution and pure water in a vaporous state or a mist state; and after discharging the mixed fluid, discharging rinse liquid to the rotating substrate. The discharging the rinse liquid includes: first, discharging the rinse liquid toward an intermediate part between a center part and a peripheral part of the substrate; and, next, gradually moving a rinse liquid discharging position toward the center part of the substrate.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] The disclosed embodiments relate to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] Conventionally, a technique for removing a resist film formed on a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) by SPM (Sulfuric Acid Hydrogen Peroxide Mixture) treatment has been known. The SPM treatment is performed by supplying an SPM liquid, which is generated by mixing sulfuric acid and hydrogen peroxide water, to the resist film on the substrate (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-27245 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can prevent a substrate from flapping during a rinse process after an SPM process. [Means for solving the problem]

[0005] A substrate processing method according to one embodiment of the present disclosure includes holding and rotating a substrate, discharging a mixed fluid onto the rotating substrate, the mixed fluid being a mixture of SPM liquid, which is a mixture of sulfuric acid and hydrogen peroxide, and pure water in vapor or mist form, and discharging a rinse liquid onto the rotating substrate after discharging the mixed fluid. Discharging the rinse liquid involves first discharging the rinse liquid toward an intermediate portion between the center and peripheral portion of the substrate, and then gradually shifting the discharge position of the rinse liquid toward the center of the substrate. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to prevent the substrate from flapping during the rinsing process after the SPM process. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a schematic diagram illustrating an example of the configuration of a processing unit according to the embodiment. [Figure 3] FIG. 3 is a cross-sectional view showing an example of the configuration of a nozzle according to an embodiment. [Figure 4] FIG. 4 is a schematic diagram showing one step of the substrate processing according to the embodiment. [Figure 5] FIG. 5 is a schematic diagram showing one step of substrate processing according to the embodiment. [Figure 6] FIG. 6 is a schematic view showing one step of the substrate processing according to the embodiment. [Figure 7] FIG. 7 is a schematic view showing one step of the substrate processing according to the embodiment. [Figure 8] FIG. 8 is a schematic view showing one step of the substrate processing according to the embodiment. [Figure 9] FIG. 9 is a schematic view showing one step of the substrate processing according to the embodiment. [Figure 10] FIG. 10 is a schematic diagram illustrating a configuration example of a processing unit according to the first modification of the embodiment. [Figure 11] FIG. 11 is a schematic diagram illustrating a configuration example of a processing unit according to the second modification of the embodiment. [Figure 12] FIG. 12 is a schematic view showing one step of substrate processing according to the second modification of the embodiment. [Figure 13] FIG. 13 is a schematic view showing one step of substrate processing according to the second modification of the embodiment. [Figure 14] FIG. 14 is a schematic view showing one step of substrate processing according to the third modification of the embodiment. [Figure 15]FIG. 15 is a schematic view showing one step of substrate processing according to the third modification of the embodiment. [Figure 16] FIG. 16 is a flowchart showing the procedure of substrate processing executed by the substrate processing system according to this embodiment. [Figure 17] FIG. 17 is a flowchart showing a procedure of substrate processing executed by the substrate processing system according to the first modification of the embodiment. [Figure 18] FIG. 18 is a flowchart showing a procedure of substrate processing executed by the substrate processing system according to the second modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of a substrate processing method and a substrate processing apparatus disclosed herein will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the following embodiments. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from the actual situation. Furthermore, the dimensional relationships and ratios may differ between the drawings.

[0009] A conventional technique for removing resist films formed on substrates such as semiconductor wafers (hereinafter also referred to as wafers) is known, using SPM (Sulfuric Acid Hydrogen Peroxide Mixture) processing. This SPM processing is performed by supplying an SPM solution, which is made by mixing sulfuric acid and hydrogen peroxide water, to the resist film on the substrate.

[0010] Furthermore, a conventional technique has been disclosed in which high-temperature water vapor is discharged onto the substrate prior to discharging the SPM liquid, and the SPM treatment is carried out in a high-temperature environment, thereby achieving efficient SPM treatment.

[0011] On the other hand, in the above-mentioned conventional technology, if impurities are mixed in the water vapor, the impurities may adhere to the substrate, thereby contaminating the substrate.

[0012] Therefore, there is a need for a technology that can overcome the above-mentioned problems and prevent substrate contamination during liquid processing such as SPM processing.

[0013] <Outline of the substrate processing system> First, a schematic configuration of a substrate processing system 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus. In the following, to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0014] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0015] The loading / unloading station 2 includes a carrier placement section 11 and a transport section 12. On the carrier placement section 11, a plurality of carriers C are placed, each of which accommodates a plurality of substrates, in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W), in a horizontal position.

[0016] The transfer section 12 is provided adjacent to the carrier placement section 11 and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving horizontally and vertically and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0017] The processing station 3 is provided adjacent to the transport part 12. The processing station 3 includes a transport part 15 and a plurality of processing units 16. The processing unit 16 is an example of a substrate processing part. The plurality of processing units 16 are provided side by side on both sides of the transport part 15.

[0018] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0019] The processing unit 16 performs a predetermined substrate processing on the wafer W transferred by the substrate transfer device 17. The processing unit 16 will be described in detail later.

[0020] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0021] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0022] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the carrier C placed on the carrier placement unit 11 and places the removed wafer W on the delivery unit 14. The wafer W placed on the delivery unit 14 is then removed from the delivery unit 14 by the substrate transfer device 17 in the processing station 3 and carried into the processing unit 16.

[0023] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C on the carrier placement section 11 by the substrate transfer device 13.

[0024] <Processing unit configuration> Next, the configuration of processing unit 16 will be described with reference to Figures 2 and 3. Figure 2 is a schematic diagram showing an example configuration of processing unit 16 according to an embodiment. As shown in Figure 2, processing unit 16 includes a chamber 20, a liquid processing section 30, a liquid supply section 40, and a collection cup 50.

[0025] Chamber 20 accommodates liquid processing section 30, liquid supply section 40, and collection cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of chamber 20. FFU 21 forms a downflow within chamber 20.

[0026] Liquid processing unit 30 includes a holder 31, a support 32, and a drive unit 33, and performs liquid processing on a placed wafer W. Holder 31 holds wafer W horizontally. Support 32 is a member extending in the vertical direction, and its base end is rotatably supported by drive unit 33, with its tip end supporting holder 31 horizontally. Drive unit 33 rotates support 32 around a vertical axis.

[0027] The liquid processing unit 30 rotates the support column 32 using the drive unit 33, thereby rotating the holder 31 supported by the support column 32, and thereby rotating the wafer W held by the holder 31.

[0028] Holding members 31a for holding the wafer W from the side are provided on the upper surface of holding unit 31 included in liquid processing unit 30. Wafer W is held horizontally by holding members 31a at a slight distance from the upper surface of holding unit 31. Wafer W is held by holding unit 31 with the surface on which substrate processing is performed facing upward.

[0029] The liquid supply unit 40 supplies a processing liquid to the wafer W. The liquid supply unit 40 includes nozzles 41 a and 41 b, arms 42 a and 42 b that horizontally support the nozzles 41 a and 41 b, respectively, and pivoting and lifting mechanisms 43 a and 43 b that pivot and lift the arms 42 a and 42 b, respectively. The nozzle 41 a is an example of a liquid discharge unit.

[0030] Nozzle 41a is, for example, a bar nozzle, and is connected to an SPM liquid supply unit 44 through an SPM liquid supply path 47, and is also connected to a water vapor supply unit 45 through a water vapor supply path 48. SPM liquid supply unit 44 is an example of a first supply unit, and water vapor supply unit 45 is an example of a second supply unit.

[0031] The SPM liquid supplied from the SPM liquid supply unit 44 is an example of a processing liquid, and is a chemical liquid produced by mixing sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) at a given ratio (e.g., H2SO4:H2O2=10:1). The SPM liquid is used, for example, in a process for removing a resist film formed on the surface of the wafer W.

[0032] The SPM liquid supply unit 44 includes a sulfuric acid supply source 44a, a valve 44b, a flow rate regulator 44c, a hydrogen peroxide supply source 44d, a valve 44e, a flow rate regulator 44f, and a confluence unit 44g.

[0033] The sulfuric acid supply source 44a supplies sulfuric acid maintained at a given temperature (for example, 120°C) to the confluence 44g through a valve 44b and a flow rate regulator 44c. The flow rate regulator 44c regulates the flow rate of the sulfuric acid supplied to the confluence 44g.

[0034] Hydrogen peroxide supply source 44d supplies hydrogen peroxide solution to confluence 44g via valve 44e and flow rate regulator 44f. Flow rate regulator 44f regulates the flow rate of hydrogen peroxide solution supplied to confluence 44g. Confluence 44g is connected to SPM liquid supply channel 47.

[0035] The SPM liquid produced by mixing sulfuric acid and hydrogen peroxide solution at confluence 44g is supplied to nozzle 41a through SPM liquid supply path 47. Note that the SPM liquid generates heat when the sulfuric acid and hydrogen peroxide solution mix, and so the temperature of the SPM liquid is raised to a temperature (for example, 140°C) higher than that of sulfuric acid by the time it reaches nozzle 41a.

[0036] The water vapor supply unit 45 includes a DIW supply source 45a, a steam generating mechanism 45b, a valve 45c, and a flow rate regulator 45d.

[0037] The DIW supply source 45a supplies DIW (Deionized Water) to the steam generating mechanism 45b. The steam generating mechanism 45b generates water vapor V (see FIG. 5) using the DIW supplied from the DIW supply source 45a as a raw material. The water vapor V is an example of pure water in a vapor state.

[0038] The flow rate regulator 45d adjusts the flow rate of the water vapor V supplied through the valve 45c to the water vapor supply path 48. Then, the water vapor V generated in the water vapor supply unit 45 is supplied through the water vapor supply path 48 to the nozzle 41a.

[0039] 3 is a cross-sectional view showing an example of the configuration of a nozzle 41a according to an embodiment. As shown in Fig. 3, one SPM liquid supply channel 47 and two water vapor supply channels 48 are inserted inside the nozzle 41a and aligned along the longitudinal direction of the nozzle 41a.

[0040] Furthermore, a discharge path 62 is connected between a discharge port 61 formed on the lower surface of the nozzle 41a and the SPM liquid supply path 47, and a discharge path 63 is connected between the discharge port 61 and the water vapor supply path .

[0041] That is, an SPM liquid (hereinafter referred to as SPM in the drawings) is supplied to an outlet 61 of the nozzle 41 a through an outlet path 62 , and water vapor V is supplied through an outlet path 63 .

[0042] In the nozzle 41a according to the embodiment, the SPM liquid and the water vapor V are mixed at the discharge port 61 to generate a mixed fluid M. That is, in the present disclosure, the mixed fluid M is generated by mixing the SPM liquid and the water vapor V after they are discharged from the nozzle 41a and before they reach the wafer W. Note that a plurality of discharge ports 61 are arranged in a row along the longitudinal direction of the nozzle 41a.

[0043] As a result, the nozzle 41a according to the embodiment can discharge a mixed fluid M, which is generated by mixing the SPM liquid and water vapor V, onto the wafer W from the multiple discharge ports 61. Furthermore, in this mixed fluid M, the temperature of the SPM liquid is further increased by the water vapor V (for example, to 160°C to 200°C).

[0044] Therefore, according to the embodiment, by treating the surface of the wafer W with the mixed fluid M in which the SPM liquid is heated, the resist film formed on the surface of the wafer W can be efficiently removed.

[0045] Returning to the description of FIG. 2, the nozzle 41b is connected to a rinse liquid supply unit 46. The rinse liquid R (see FIG. 4) supplied from the rinse liquid supply unit 46 is used, for example, for rinsing. Examples of the rinse liquid R according to the embodiment include hydrogen peroxide, DIW, ozone water, and diluted ammonia water.

[0046] The rinse liquid supply unit 46 includes a rinse liquid supply source 46a, a valve 46b, and a flow rate regulator 46c. The rinse liquid supply source 46a supplies the rinse liquid R to the nozzle 41b. The flow rate regulator 46c regulates the flow rate of the rinse liquid R supplied to the nozzle 41b via the valve 46b.

[0047] Recovery cup 50 is disposed to surround holder 31, and collects the processing liquid scattered from wafer W by the rotation of holder 31. A drain outlet 51 is formed at the bottom of recovery cup 50, and the processing liquid collected by recovery cup 50 is discharged from drain outlet 51 to the outside of processing unit 16.

[0048] In addition, an exhaust port 52 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the collection cup 50.

[0049] <Substrate processing details> Next, details of the substrate processing according to the embodiment will be described with reference to Figures 4 to 9. Figures 4 to 9 are schematic views showing one step of the substrate processing according to the embodiment.

[0050] 4, the control unit 18 (see FIG. 1) holds the wafer W by the holding unit 31 (see FIG. 2). Next, the control unit 18 positions the nozzle 41b above the center Wc of the wafer W, and positions the nozzle 41a above the wafer W and in the vicinity of the nozzle 41b.

[0051] Then, the control unit 18 rotates the wafer W at a given rotation speed and discharges the rinse liquid R from the nozzle 41b onto the center Wc of the wafer W. That is, the control unit 18 supplies the rinse liquid R so that the rinse liquid R that spreads when it comes into contact with the wafer W hits the center of the wafer W. In this way, the control unit 18 forms a liquid film of the rinse liquid R over the entire surface of the wafer W.

[0052] In this embodiment, the water vapor V used in the immediately preceding wafer processing may condense inside the water vapor supply path 48 (see FIG. 2), and the condensed water droplets may fall directly onto the surface of the wafer W from the nozzle 41a.

[0053] In the embodiment, impurities may be mixed into the water vapor V by the steam generating mechanism 45b (see FIG. 2) or the like, and therefore the water droplets remaining in the water vapor supply path 48 may also contain a large amount of impurities. Therefore, if the water droplets fall directly onto the surface of the wafer W, the wafer W may be contaminated by the impurities contained in the water droplets.

[0054] However, in the embodiment, a liquid film of the rinse liquid R is formed in advance over the entire surface of the wafer W, so that the impurities contained in the water droplets can be scattered from the wafer W without being directly attached to the surface of the wafer W.

[0055] That is, in the embodiment, it is possible to prevent impurities remaining in the water vapor supply path 48 from directly adhering to the surface of the wafer W. Therefore, according to the embodiment, by forming a liquid film of the rinsing liquid R on the entire surface of the wafer W in advance, it is possible to prevent the wafer W from being contaminated by impurities contained in the water vapor V.

[0056] 5, the control unit 18 may also eject water vapor V from the nozzle 41a toward the surface of the wafer W on which the liquid film of the rinse liquid R is formed. That is, in the process shown in FIG. 5, the SPM liquid is not supplied to the nozzle 41a, and only the water vapor V is supplied.

[0057] This makes it possible to reliably push out water droplets generated by condensation inside the water vapor supply path 48 from the water vapor supply path 48 together with the water vapor V. Therefore, according to the embodiment, contamination of the wafer W by impurities contained in the water vapor V can be further suppressed.

[0058] Furthermore, in the embodiment, the nozzle 41a and the water vapor supply path 48 can be heated by ejecting the water vapor V from the nozzle 41a toward the surface of the wafer W on which the liquid film of the rinse liquid R is formed. This makes it possible to prevent the water vapor V from condensing when the water vapor V is ejected from the nozzle 41a in a later process.

[0059] Therefore, according to the embodiment, contamination of the wafer W by impurities contained in the water vapor V can be further suppressed.

[0060] Furthermore, in the embodiment, by raising the temperature of the nozzle 41a and the water vapor supply channel 48 in advance with the water vapor V, it is possible to promote the rise in temperature when the water vapor V is discharged from the nozzle 41a in a later process.

[0061] Next, as shown in Fig. 6, the control unit 18 stops the discharge of the water vapor V from the nozzle 41a at the timing when the water droplets remaining in the water vapor supply channel 48 (see Fig. 2) are discharged to the outside (for example, about 10 seconds after the start of the discharge of the water vapor V). This allows the control unit 18 to remove the water droplets remaining in the water vapor supply channel 48.

[0062] Furthermore, at the same time as stopping the discharge of the water vapor V from the nozzle 41a, the control unit 18 also stops the discharge of the rinse liquid R from the nozzle 41b and moves the nozzle 41b to the standby position. Note that in the process shown in FIG. 6, a liquid film of the rinse liquid R continues to be formed on the surface of the wafer W.

[0063] 7, the control unit 18 rotates the wafer W at a given first rotation speed and discharges the SPM liquid from the nozzle 41a toward the surface of the wafer W on which a liquid film of the rinse liquid R is formed. For example, the control unit 18 discharges the SPM liquid from the nozzle 41a, which is a bar nozzle, from the center to the peripheral edge of the wafer W on which the liquid film of the rinse liquid R is formed.

[0064] 7, the water vapor V is not supplied to the nozzle 41a, and only the SPM liquid is supplied. As a result, the control unit 18 forms a liquid film of the SPM liquid on the surface of the wafer W.

[0065] Here, in the embodiment, by discharging the SPM liquid toward the surface of the wafer W on which the liquid film of the rinse liquid R is formed, the SPM liquid, which has a relatively high viscosity, can be spread quickly over the entire surface of the wafer W.

[0066] That is, in the embodiment, it is possible to prevent the highly viscous SPM liquid from spreading unevenly over the surface of the wafer W, and thereby preventing the SPM liquid from splashing on the holding member 31a (see FIG. 2) and the like. Therefore, according to the embodiment, it is possible to prevent the wafer W from being contaminated by such splashing.

[0067] 8, the control unit 18 starts discharging the mixed fluid M from the nozzle 41a at the timing when the SPM liquid has spread over the entire surface of the wafer W (for example, about 3 seconds after the start of discharging the SPM liquid). For example, the control unit 18 discharges the mixed fluid M from the nozzle 41a, which is a bar nozzle, from the center to the peripheral edge of the wafer W.

[0068] 8, both the SPM liquid and the water vapor V are supplied to the nozzle 41a. As a result, the control unit 18 forms a liquid film of the mixed fluid M on the surface of the wafer W.

[0069] In the embodiment, the wafer W is subjected to the SPM process using the SPM liquid heated by the water vapor V, so that the resist film formed on the surface of the wafer W can be removed efficiently.

[0070] 7 and 8, during SPM processing, the control unit 18 first ejects only the SPM liquid from the nozzle 41a, and then additionally ejects water vapor V from the nozzle 41a. That is, the control unit 18 additionally ejects water vapor V onto the surface of the wafer W on which a liquid film of the SPM liquid has been formed.

[0071] This allows the control unit 18 to scatter impurities contained in the water vapor V from the wafer W without causing the impurities to adhere directly to the surface of the wafer W.

[0072] That is, in the embodiment, it is possible to prevent impurities contained in the water vapor V from directly adhering to the surface of the wafer W. Therefore, according to the embodiment, it is possible to prevent the wafer W from being contaminated in a liquid process such as an SPM process.

[0073] Furthermore, in the embodiment, it is preferable that the control unit 18 performs a process (see FIG. 5) of discharging only water vapor V from the nozzle 41a prior to the SPM process. This makes it possible to prevent the water droplets remaining in the water vapor supply path 48 from reacting with the SPM liquid and causing bumping, which would otherwise cause splashing, when the mixed fluid M is produced by the nozzle 41a.

[0074] Therefore, according to the embodiment, contamination of the wafer W due to such liquid splashes can be suppressed.

[0075] In addition, in the embodiment, in the discharge process of the mixed fluid M shown in Fig. 8, the rotation speed of the wafer W may be set to a second rotation speed which is smaller than the first rotation speed in the discharge process of the SPM liquid shown in Fig. 7. That is, in the embodiment, the discharge process of the SPM liquid may be performed at the larger first rotation speed, and the discharge process of the mixed fluid M may be performed at the smaller second rotation speed.

[0076] In this way, by performing the SPM liquid ejection process at the higher first rotation speed, a liquid film of the SPM liquid can be quickly formed over the entire surface of the wafer W, allowing for a quick transition to the mixed fluid M ejection process.

[0077] Furthermore, by performing the discharge process of the mixed fluid M at a lower second rotation speed, the contact time between the surface of the wafer W and the mixed fluid M can be increased, and therefore the resist film formed on the surface of the wafer W can be removed more efficiently.

[0078] That is, in the embodiment, by performing the discharge process of the mixed fluid M at the second rotation speed which is lower than the first rotation speed, the resist film can be efficiently removed in a short processing time.

[0079] In the embodiment, the discharge process of the SPM liquid shown in Fig. 7 may be performed at a larger first discharge flow rate, and the discharge process of the mixed fluid M shown in Fig. 8 may be performed at a smaller second discharge flow rate. This also makes it possible to efficiently remove the resist film in a short processing time.

[0080] 8, it is preferable to stop the supply of the water vapor V before the supply of the SPM liquid. If the supply of the SPM liquid is stopped before the supply of the water vapor V, the water vapor V containing impurities may directly adhere to the surface of the wafer W, which may contaminate the wafer W.

[0081] On the other hand, in the embodiment, by stopping the supply of the water vapor V before the supply of the SPM liquid, it is possible to prevent the water vapor V containing impurities from directly adhering to the surface of the wafer W. Therefore, according to the embodiment, it is possible to prevent the wafer W from being contaminated by the impurities contained in the water vapor V.

[0082] In the embodiment, when the discharge process of the mixed fluid M is finished, the supply of the water vapor V is not necessarily stopped before the supply of the SPM liquid, and the supply of the SPM liquid and the supply of the water vapor V may be stopped simultaneously.

[0083] This also makes it possible to prevent the water vapor V containing impurities from directly adhering to the surface of the wafer W, thereby preventing the wafer W from being contaminated by the impurities contained in the water vapor V.

[0084] 9, the control unit 18 moves the nozzle 41b to above the center Wc of the wafer W, and discharges the rinse liquid R from the nozzle 41b onto the wafer W. That is, the control unit 18 supplies the rinse liquid R so that the rinse liquid R that spreads when it comes into contact with the wafer W hits the center of the wafer W. In this way, the control unit 18 performs a rinse process on the wafer W.

[0085] 9 may be performed using hydrogen peroxide water. That is, in the embodiment, hydrogen peroxide water may be used as the rinse liquid R. This allows the wafer W to be rinsed efficiently.

[0086] Then, following this rinsing process, the control unit 18 performs a drying process (for example, spin drying) on ​​the wafer W, completing a series of substrate processing steps.

[0087] In the above embodiment, an example has been shown in which the SPM liquid is used as the processing liquid that serves as a raw material for the mixed fluid M together with the water vapor V, but the present disclosure is not limited to such an example. For example, dilute sulfuric acid, a mixture of sulfuric acid and ozone water, phosphoric acid, SC1 (a mixture of ammonia and hydrogen peroxide), DHF (dilute hydrofluoric acid), a mixture of hydrofluoric nitric acid and hydrogen peroxide, or the like may be used as the processing liquid that serves as a raw material for the mixed fluid M together with the water vapor V.

[0088] On the other hand, by using the SPM liquid as the processing liquid that serves as the raw material for the mixed fluid M together with the water vapor V, the SPM processing can be carried out at a high temperature, and therefore the resist film formed on the surface of the wafer W can be efficiently removed.

[0089] <Variation 1> Next, various modifications of the embodiment will be described with reference to Figures 10 to 15. Figure 10 is a schematic diagram showing an example of the configuration of a processing unit 16 according to a first modification of the embodiment.

[0090] 10, the processing unit 16 according to the first modification differs from the embodiment in that a water mist supply unit 45A is provided instead of the water vapor supply unit 45. Therefore, in the following examples, the same components as those in the embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0091] Nozzle 41a is, for example, a bar nozzle, and is connected to an SPM liquid supply unit 44 through an SPM liquid supply path 47, and is also connected to a water mist supply unit 45A through a water mist supply path 48A. Water mist supply unit 45A is another example of a second supply unit.

[0092] The water mist supplied from the water mist supply unit 45A is an example of mist-like pure water, and is generated by mixing DIW and nitrogen (N2). This water mist is used to raise the temperature of the SPM liquid, similar to the water vapor V in the embodiment.

[0093] The water mist supply unit 45A includes a DIW supply source 45a, a valve 45c, a flow rate regulator 45d, a nitrogen supply source 45f, a valve 45g, a flow rate regulator 45h, a mixer 45i, and a heater 45j.

[0094] The DIW supply source 45a supplies DIW to the mixer 45i through a valve 45c and a flow regulator 45d, which regulates the flow rate of the DIW supplied to the mixer 45i.

[0095] The nitrogen supply source 45f supplies nitrogen gas to the mixer 45i through a valve 45g and a flow regulator 45h, which regulates the flow rate of the nitrogen gas supplied to the mixer 45i.

[0096] The mixer 45i functions as an atomizer. In the first modification, the DIW in a liquid state at room temperature is mixed with nitrogen gas at room temperature in the mixer 45i and atomized into water mist, which flows out to the heater 45j downstream.

[0097] The heater 45j is connected to the water mist supply passage 48A. The heater 45j heats the water mist supplied from the mixer 45i to a given temperature (for example, about 100°C) and supplies the heated water mist to the water mist supply passage 48A.

[0098] The water mist supplied to the nozzle 41a through the water mist supply path 48A is discharged from the discharge port 61 (see FIG. 3) of the nozzle 41a through the discharge path 63 (see FIG. 3), similar to the water vapor V of the embodiment. This allows the processing unit 16 according to the first modification to discharge the mixed fluid M, which is generated by mixing the SPM liquid and the water mist, onto the wafer W from the nozzle 41a.

[0099] Furthermore, in Modification 1, the mist-like DIW is mixed with the SPM liquid after being sprayed, so that the mixing of the SPM liquid and the water mist is quickly completed, and a rapid temperature rise due to the heat of hydration is achieved. Therefore, according to Modification 1, the resist film formed on the surface of the wafer W can be efficiently removed by the mixed fluid M in which the SPM liquid is heated.

[0100] In the first modification, similarly to the above-described embodiment, the control unit 18 may form a liquid film of the rinse liquid R on the surface of the wafer W prior to the discharge of the water mist (see FIG. 5). This prevents water droplets generated by condensation of the water mist remaining in the water mist supply path 48A from being directly discharged onto the surface of the wafer W.

[0101] Therefore, according to the first modification, it is possible to prevent water stains and the like caused by such water droplets from remaining on the surface of the wafer W, and therefore it is possible to prevent the wafer W from being contaminated by such water stains and the like.

[0102] Furthermore, in Modification 1, during SPM processing, the control unit 18 may first eject only the SPM liquid from the nozzle 41a, and then additionally eject a water mist from the nozzle 41a (see FIGS. 7 and 8). That is, the control unit 18 may eject a water mist onto the surface of the wafer W on which a liquid film of the SPM liquid has been formed.

[0103] This allows the control unit 18 to prevent the scale contained in the water mist from directly adhering to the surface of the wafer W. Therefore, according to the first modification, it is possible to prevent the wafer W from being contaminated by such scale.

[0104] Furthermore, in Modification 1, it is preferable that the control unit 18 performs a process of discharging only water mist from the nozzle 41a (see FIG. 5) prior to the SPM process. This makes it possible to prevent the water droplets remaining in the water mist supply path 48A from reacting with the SPM liquid, causing bumping and splashing, when the mixed fluid M is produced by the nozzle 41a.

[0105] Therefore, according to the first modification, contamination of the wafer W due to such liquid splashing can be suppressed.

[0106] <Variation 2> Fig. 11 is a schematic diagram showing a configuration example of a processing unit 16 according to Modification 2 of the embodiment. As shown in Fig. 11, the processing unit 16 according to Modification 2 differs from the embodiment in that a nozzle 41c is further provided on the arm 42b and a hydrogen peroxide supply unit 49 is provided connected to the nozzle 41c.

[0107] The hydrogen peroxide solution supply unit 49 includes a hydrogen peroxide solution supply source 49a, a valve 49b, and a flow rate regulator 49c. The hydrogen peroxide solution supply source 49a supplies the hydrogen peroxide solution to the nozzle 41c through the valve 49b and the flow rate regulator 49c. The flow rate regulator 49c regulates the flow rate of the hydrogen peroxide solution supplied to the nozzle 41c.

[0108] In the second modification, DIW is supplied from the rinse liquid supply source 46a of the rinse liquid supply unit 46 to the nozzle 41b as the rinse liquid R (see FIG. 13).

[0109] 12 and 13 are schematic views showing a step of the substrate processing according to Modification 2 of the embodiment. In the substrate processing according to Modification 2, various processes up to the discharge process of the mixed fluid M shown in FIG. 8 are the same as those in the embodiment, and therefore descriptions thereof will be omitted.

[0110] 8, the control unit 18 moves the nozzle 41c to above the center Wc of the wafer W, as shown in Fig. 12, and discharges the hydrogen peroxide solution from the nozzle 41c onto the wafer W. In this way, the control unit 18 treats the surface of the wafer W with the hydrogen peroxide solution.

[0111] As a result, in variant 2, if sulfur (S) components contained in the SPM liquid used in SPM processing remain on the surface of the wafer W, the sulfur components can be removed from the surface of the wafer W by reacting the sulfur components with hydrogen peroxide water.

[0112] 13, the control unit 18 moves the nozzle 41b to above the center of the wafer W, and discharges the rinse liquid R, which is DIW, from the nozzle 41b onto the wafer W. In this way, the control unit 18 performs a rinse process on the wafer W.

[0113] In addition, in the second modification, the sulfur component that has reacted with the hydrogen peroxide solution can be removed from the surface of the wafer W by the rinsing process.

[0114] As described above, in variant 2, after the mixed fluid M is ejected, a hydrogen peroxide ejection process and a rinsing process are successively performed, thereby further cleaning the surface of the wafer W that has been subjected to liquid processing such as SPM processing.

[0115] <Variation 3> 14 and 15 are schematic views showing a step of the substrate processing according to Modification 3 of the embodiment. In the substrate processing according to Modification 3, various processes up to the discharge process of the mixed fluid M shown in FIG. 8 are the same as those in the embodiment, and therefore descriptions thereof will be omitted.

[0116] Following the discharge process of the mixed fluid M shown in FIG. 8, the control unit 18 performs the following process as shown in FIG. The nozzle 41b is moved to above the intermediate portion Wm between the center portion Wc and the peripheral portion We of the wafer W, and the rinse liquid R is discharged onto the wafer W from the nozzle 41b.

[0117] That is, the control unit 18 supplies the rinse liquid R so that the rinse liquid R that spreads when it comes into contact with the wafer W falls on the middle portion Wm and the peripheral portion We of the wafer W. In this way, the control unit 18 performs a rinse process on the wafer W.

[0118] The middle portion Wm of the wafer W is, for example, a portion spaced a given distance from the peripheral edge We of the wafer W toward the center Wc (for example, approximately 50 (mm) from the peripheral edge We).

[0119] 15, the control unit 18 gradually moves the nozzle 41b from above the intermediate portion Wm of the wafer W to above the center portion Wc, and continues to discharge the rinse liquid R from the nozzle 41b (so-called scan-in operation). This allows the control unit 18 to perform a rinse process on the center portion Wc of the wafer W as well.

[0120] For example, in a rinse process for a wafer W, if a room temperature rinse liquid R is ejected onto the center Wc of the wafer W, which is very hot (for example, about 200°C) immediately after SPM processing, the temperature difference between the center Wc and the peripheral edge We of the wafer W will be very large.

[0121] Therefore, in this case, the peripheral portion We of the wafer W expands significantly while the central portion We contracts rapidly, which may cause fluttering of the wafer W in the initial stage of the rinse process. In particular, in the SPM process using a bar nozzle, the temperatures of the central portion We and the peripheral portion We of the wafer W become approximately uniform, which may cause such fluttering to occur significantly in the initial stage of the rinse process.

[0122] Therefore, in this modification 3, in the rinsing process of the wafer W, the rinsing liquid R is first discharged onto the middle portion Wm of the wafer W, which is closer to the peripheral portion We than the center portion Wc. This makes it possible to reduce the temperature difference between the center portion Wc and the peripheral portion We of the wafer W in the early stage of the rinsing process.

[0123] Therefore, according to the third modification, it is possible to prevent the wafer W from flapping in the initial stage of the rinse process that is performed immediately after the SPM process using the bar nozzle.

[0124] 14 and 15 show an example in which the rinse process performed immediately after the SPM process when the wafer W is in a high temperature state is performed by the scan-in operation, but the present disclosure is not limited to such an example. For example, in the process of removing sulfur components using hydrogen peroxide solution performed immediately after the SPM process when the wafer W is in a high temperature state, the discharge of hydrogen peroxide solution may be performed by the scan-in operation.

[0125] The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a holding unit 31, a liquid discharge unit (nozzle 41a), a first supply unit (SPM liquid supply unit 44), a second supply unit (water vapor supply unit 45, water mist supply unit 45A), and a control unit 18. The holding unit 31 holds a substrate (wafer W). The liquid discharge unit (nozzle 41a) discharges a fluid onto the substrate (wafer W) held by the holding unit 31. The first supply unit (SPM liquid supply unit 44) supplies a processing liquid (SPM liquid) generated by mixing sulfuric acid and hydrogen peroxide solution to the liquid discharge unit (nozzle 41a). The second supply unit (water vapor supply unit 45, water mist supply unit 45A) supplies pure water in the form of vapor or mist to the liquid discharge unit (nozzle 41a). The control unit 18 controls each unit. The control unit 18 also discharges the processing liquid (SPM liquid) from the liquid discharge unit (nozzle 41a) onto the substrate (wafer W) held by the holder 31. Furthermore, the control unit 18 discharges a mixed fluid M, which is generated by mixing the processing liquid (SPM liquid) with pure water in a vapor or mist state, from the liquid discharge unit (nozzle 41a) onto the substrate (wafer W) onto which the processing liquid (SPM liquid) has been discharged. This makes it possible to prevent the wafer W from being contaminated during the SPM process.

[0126] <Substrate processing procedure> Next, the procedure of substrate processing according to the embodiment and various modifications will be described with reference to Figures 16 to 18. Figure 16 is a flowchart showing the procedure of substrate processing executed by the substrate processing system 1 according to the embodiment.

[0127] First, the control unit 18 controls the processing unit 16 and the like to hold the wafer W in the holder 31 (step S101). Then, the control unit 18 controls the rinse liquid supply unit 46 and the like to discharge the rinse liquid R onto the rotating wafer W. As a result, the control unit 18 forms a liquid film of the rinse liquid R on the surface of the wafer W (step S102).

[0128] Next, the control unit 18 controls the water vapor supply unit 45 and the like to discharge the water vapor V onto the wafer W (step S103). As a result, the control unit 18 discharges the water droplets remaining in the water vapor supply path 48 to the outside.

[0129] Next, the control unit 18 controls the water vapor supply unit 45, the rinse liquid supply unit 46, etc. to stop the discharge of the rinse liquid R and the water vapor V onto the wafer W (step S104). Then, the control unit 18 controls the SPM liquid supply unit 44, etc. to discharge the SPM liquid onto the wafer W (step S105).

[0130] Next, the control unit 18 controls the SPM liquid supply unit 44, the water vapor supply unit 45, etc. to supply both the SPM liquid and the water vapor V to the nozzle 41a, thereby discharging the mixed fluid M onto the wafer W (step S106).

[0131] Next, the control unit 18 controls the water vapor supply unit 45 and the like to stop the discharge of water vapor V from the nozzle 41a (step S107), and then controls the SPM liquid supply unit 44 and the like to stop the discharge of SPM liquid from the nozzle 41a (step S108).

[0132] Next, the control unit 18 controls the rinse liquid supply unit 46 and the like to perform a rinse process on the wafer W with the rinse liquid R (step S109). The process of step S109 may be performed by performing a scan-in operation of the nozzle 41b. Then, the control unit 18 controls the processing unit 16 to perform a drying process (e.g., spin drying) on ​​the wafer W (step S110), thereby completing a series of substrate processing steps.

[0133] FIG. 17 is a flowchart showing the procedure of substrate processing executed by the substrate processing system 1 according to the first modification of the embodiment.

[0134] First, the control unit 18 controls the processing unit 16 and the like to hold the wafer W in the holder 31 (step S201). Then, the control unit 18 controls the rinse liquid supply unit 46 and the like to discharge the rinse liquid R onto the rotating wafer W. As a result, the control unit 18 forms a liquid film of the rinse liquid R on the surface of the wafer W (step S202).

[0135] Next, the control unit 18 controls the water mist supply unit 45A and the like to discharge water mist onto the wafer W (step S203). As a result, the control unit 18 discharges water droplets remaining in the water mist supply path 48A to the outside.

[0136] Next, the control unit 18 controls the water mist supply unit 45A, the rinse liquid supply unit 46, etc. to stop the discharge of the rinse liquid R and the water mist onto the wafer W (step S204). Then, the control unit 18 controls the SPM liquid supply unit 44, etc. to discharge the SPM liquid onto the wafer W (step S205).

[0137] Next, the control unit 18 controls the SPM liquid supply unit 44, the water mist supply unit 45A, etc. to supply both the SPM liquid and the water mist to the nozzle 41a, thereby discharging the mixed fluid M onto the wafer W (step S206).

[0138] Next, control unit 18 controls water mist supply unit 45A and the like to stop the discharge of water mist from nozzle 41a (step S207), and then controls SPM liquid supply unit 44 and the like to stop the discharge of SPM liquid from nozzle 41a (step S208).

[0139] Next, the control unit 18 controls the rinse liquid supply unit 46 and the like to perform a rinse process on the wafer W with the rinse liquid R (step S209). The process of step S209 may be performed by performing a scan-in operation of the nozzle 41b. Then, the control unit 18 controls the processing unit 16 to perform a drying process (e.g., spin drying) on ​​the wafer W (step S210), thereby completing a series of substrate processing steps.

[0140] FIG. 18 is a flowchart showing the procedure of substrate processing executed by the substrate processing system 1 according to this embodiment.

[0141] First, the control unit 18 controls the processing unit 16 and the like to hold the wafer W in the holder 31 (step S301). Then, the control unit 18 controls the rinse liquid supply unit 46 and the like to discharge the rinse liquid R onto the rotating wafer W. As a result, the control unit 18 forms a liquid film of the rinse liquid R on the surface of the wafer W (step S302).

[0142] Next, the control unit 18 controls the water vapor supply unit 45 and the like to discharge the water vapor V onto the wafer W (step S303). As a result, the control unit 18 discharges the water droplets remaining in the water vapor supply path 48 to the outside.

[0143] Next, the control unit 18 controls the water vapor supply unit 45, the rinse liquid supply unit 46, etc. to stop the discharge of the rinse liquid R and the water vapor V onto the wafer W (step S304). Then, the control unit 18 controls the SPM liquid supply unit 44, etc. to discharge the SPM liquid onto the wafer W (step S305).

[0144] Next, the control unit 18 controls the SPM liquid supply unit 44, the water vapor supply unit 45, etc. to supply both the SPM liquid and the water vapor V to the nozzle 41a, thereby discharging the mixed fluid M onto the wafer W (step S306).

[0145] Next, the control unit 18 controls the water vapor supply unit 45 and the like to stop the discharge of water vapor V from the nozzle 41a (step S307), and then controls the SPM liquid supply unit 44 and the like to stop the discharge of SPM liquid from the nozzle 41a (step S308).

[0146] Next, control unit 18 controls hydrogen peroxide supply unit 49 and the like to discharge hydrogen peroxide solution onto wafer W (step S309). Note that the process of step S309 may be performed by scanning nozzle 41c. Then, control unit 18 controls rinse liquid supply unit 46 and the like to perform a rinse process on wafer W with rinse liquid R, which is DIW (step S310).

[0147] Next, the control unit 18 controls the processing unit 16 to perform a drying process (for example, spin drying) on ​​the wafer W (step S311), completing a series of substrate processing steps.

[0148] The substrate processing method according to the embodiment includes a processing liquid discharge step (steps S105, S205, S305) and a mixed fluid discharge step (steps S106, S206, S306). In the processing liquid discharge step (steps S105, S205, S305), a processing liquid (SPM liquid) generated by mixing sulfuric acid and hydrogen peroxide solution is discharged onto a substrate (wafer W). In the mixed fluid discharge step (steps S106, S206, S306), a mixed fluid M generated by mixing the processing liquid (SPM liquid) with pure water in a vapor or mist state is discharged onto the substrate (wafer W) onto which the processing liquid (SPM liquid) has been discharged. This makes it possible to prevent contamination of the wafer W during liquid processing such as SPM processing.

[0149] The substrate processing method according to the embodiment further includes a liquid film forming step (steps S102, S202, S302) and a pure water discharging step (steps S103, S203, S303). The liquid film forming step (steps S102, S202, S302) involves discharging the rinse liquid R onto the substrate (wafer W) to form a liquid film of the rinse liquid R on the surface of the substrate (wafer W). The pure water discharging step (steps S103, S203, S303) involves discharging pure water in a vapor or mist state onto the liquid film of the rinse liquid R formed on the surface of the substrate (wafer W). The processing liquid discharging step (steps S105, S205, S305) is performed after the pure water discharging step (steps S103, S203, S303). This prevents the wafer W from being contaminated by impurities, scale, or the like.

[0150] Furthermore, in the substrate processing method according to the embodiment, the processing liquid discharge step (steps S105, S205, S305) is performed on the surface of the substrate (wafer W) on which a liquid film of the rinse liquid R has been formed. This makes it possible to prevent the wafer W from being contaminated by liquid splashes.

[0151] In the substrate processing method according to the embodiment, the rinse liquid R is hydrogen peroxide solution, which allows the wafer W to be rinsed efficiently.

[0152] The substrate processing method according to the embodiment further includes a hydrogen peroxide solution discharge step (step S309) and a rinsing step (step S310). In the hydrogen peroxide solution discharge step (step S309), hydrogen peroxide solution is discharged onto the substrate (wafer W) after the mixed fluid discharge step (step S306). In the rinsing step (step S310), pure water, which is a rinse liquid R, is discharged onto the substrate (wafer W) after the hydrogen peroxide solution discharge step (step S309). This allows the surface of the wafer W, which has been subjected to a liquid process such as SPM processing, to be further cleaned.

[0153] In the substrate processing method according to the embodiment, the substrate (wafer W) rotates at a first rotation speed in the processing liquid discharge step (steps S105, S205, S305). In addition, the substrate (wafer W) rotates at a second rotation speed that is lower than the first rotation speed in the mixed fluid discharge step (steps S106, S206, S306). This allows the resist film to be removed efficiently in a short processing time.

[0154] In addition, in the substrate processing method according to the embodiment, when the mixed fluid discharge step (steps S106, S206, S306) is completed, the supply of the pure water in vapor or mist form is stopped before the supply of the processing liquid (SPM liquid). This makes it possible to prevent the wafer W from being contaminated by impurities, scale, etc.

[0155] In the substrate processing method according to the embodiment, the mixed fluid M is generated by mixing the processing liquid (SPM liquid) and the vapor or mist of pure water after they are discharged from the nozzle 41a and before they reach the substrate (wafer W). This allows the high-temperature mixed fluid M to be supplied to the wafer W.

[0156] Furthermore, in the substrate processing method according to the embodiment, the fluid mixture M is supplied from the center to the peripheral edge of the substrate (wafer W), and the rinse liquid R is supplied so that the rinse liquid R that spreads upon contact with the substrate (wafer W) falls on the center of the substrate (wafer W). This allows liquid processing such as SPM processing to be carried out efficiently.

[0157] Moreover, the substrate processing method according to the embodiment further includes a rinsing step (S109, S209) of discharging a rinsing liquid onto the substrate (wafer W) after the mixed fluid discharging step (steps S106, S206, S306). In the rinsing step (S109, S209), the rinsing liquid is first discharged toward an intermediate portion Wm between the center Wc and the peripheral portion We of the substrate (wafer W), and then the discharge position of the rinsing liquid is gradually moved toward the center Wc of the substrate (wafer W). This makes it possible to prevent the wafer W from flapping in the early stages of the rinsing process.

[0158] In the substrate processing method according to the embodiment, the processing liquid is an SPM liquid produced by mixing sulfuric acid and hydrogen peroxide solution, which makes it possible to efficiently remove the resist film formed on the surface of the wafer W.

[0159] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from the spirit thereof. For example, in the above-described embodiments, an example in which a rinsing process and a drying process are performed after an SPM process using a mixed fluid M is shown, but a cleaning process or the like may be performed between the SPM process and the rinsing process. Such a cleaning process can be performed, for example, by discharging SC-1 (a mixed liquid of ammonia and hydrogen peroxide solution) onto the surface of the wafer W.

[0160] Furthermore, in the above-described embodiment, an example in which spin drying is performed as the drying process has been shown, but spin drying may also be performed after a drying liquid (for example, IPA (isopropyl alcohol)) is ejected onto the surface of the wafer W.

[0161] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0162] W wafer (an example of a substrate) Wc center We Periphery Wm middle part 1. Substrate processing system (an example of a substrate processing device) 16 Processing Unit 18 Control Unit 31 Holding part 41a Nozzle (an example of a liquid discharge part) 41b, 41c nozzle 44 SPM liquid supply unit (an example of the first supply unit) 45 Steam supply unit (an example of a second supply unit) 45A Water mist supply unit (another example of the second supply unit) 46 Rinse liquid supply unit 47 SPM liquid supply path 48 Steam supply channel 48A Water mist supply line 49 Super water supply section

Claims

1. holding and rotating the substrate; Discharging a mixed fluid produced by mixing an SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide solution, with pure water in a vapor or mist state onto the rotating substrate; After discharging the fluid mixture, discharging a rinse liquid onto the rotating substrate; Including, The rinse liquid is first discharged toward an intermediate portion between the center and the peripheral portion of the substrate, and then the discharge position of the rinse liquid is gradually moved toward the center of the substrate. Substrate processing method.

2. The intermediate portion is closer to the peripheral portion than the central portion. The substrate processing method according to claim 1 .

3. The rinse solution is hydrogen peroxide.

3. The substrate processing method according to claim 1.

4. The mixed fluid is supplied from the center to the periphery of the substrate. The substrate processing method according to any one of claims 1 to 3.

5. The step of holding and rotating the substrate includes holding the substrate using a holding member that holds the substrate from the side. The substrate processing method according to any one of claims 1 to 4.

6. a holder that holds and rotates the substrate; a mixed fluid discharge unit that discharges a mixed fluid generated by mixing an SPM liquid, which is a mixed liquid of sulfuric acid and hydrogen peroxide water, with pure water in a vapor or mist state onto the substrate held by the holder; a rinse liquid discharge unit that discharges a rinse liquid onto the substrate held by the holder; A control unit that controls each part Equipped with The control unit holding and rotating the substrate; Discharging the fluid mixture onto the rotating substrate; After the process of discharging the mixed fluid, a process of discharging a rinse liquid onto the rotating substrate. Run The rinse liquid is first discharged toward an intermediate portion between the center and the peripheral portion of the substrate, and then the discharge position of the rinse liquid is gradually moved toward the center of the substrate. Substrate processing equipment.

Images