Method and apparatus for processing wafer

Abstract

To provide a method and apparatus for processing a wafer, capable of suitably obtaining a wafer having a desired shape as compared with before.SOLUTION: A method for processing a wafer comprises: a holding step 1002 of holding a first surface of a wafer on a first holding surface of a first holding part; a protective member supply step 1003 of supplying a liquid protective member to at least one of a second surface of the wafer held on the first holding part and a second holding surface of a second holding part facing the first holding part; a coating step 1005 of relatively approaching the first holding surface to the second holding surface to coat the second surface of the wafer with the protective member; and curing step 1006 of curing the protective member. Before the curing step 1006, performed is a shape control step 1004 of imparting external force to the wafer held by the first holding part or the protective member supplied in the protective member supply step 1003 to control the shape of the wafer held by the first holding part or the protective member.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a wafer processing method and a wafer processing apparatus. [Background technology]

[0002] A known method for obtaining a flat wafer is to form a protective member by coating one side of the wafer with a liquid resin and hardening it, grinding the side opposite the protective member, peeling the protective member off the wafer, and grinding the surface to which the protective member was attached (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-249652 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the method of Patent Document 1 had the problem that the swell and warp of the wafer after both sides were ground changed depending on the orientation of the wafer when the protective member was formed, and therefore it was not possible to obtain a wafer with the desired shape.

[0005] The present invention has been made in view of the above problems, and its object is to provide a wafer processing method and wafer processing apparatus that can more suitably obtain wafers having a desired shape than conventional methods. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems and achieve the object, the wafer processing method of the present invention is a wafer processing method comprising: a holding step of holding a first surface of a wafer on a first holding surface of a first holding part; a protective member supplying step of supplying a liquid protective member to at least one of the second surface of the wafer held by the first holding part and the second holding surface of a second holding part facing the first holding part; a covering step of bringing the first holding surface and the second holding surface closer together to cover the second surface of the wafer with the protective member; and a hardening step of hardening the protective member, characterized in that before the hardening step, a shape control step is carried out in which an external force is applied to at least one of the wafer held by the first holding part and the protective member supplied in the protective member supplying step to control the shape of at least one of the wafer held by the first holding part and the protective member.

[0007] The shape control step may include at least one of supplying and suctioning a fluid from the first holding surface.

[0008] The shape control step may include at least one of supplying and suctioning a fluid from the second holding surface.

[0009] The shape control step may provide a difference in the position in the thickness direction of the wafer within the region of the first holding surface or the second holding surface that holds the wafer.

[0010] The method may further include an acquisition step of acquiring information regarding the shape of the wafer when it is not held in the first holding portion, and the shape control step may apply an external force in a direction that brings the wafer closer to the shape acquired in the acquisition step.

[0011] In addition, in order to solve the above-mentioned problems and achieve the object, the wafer processing device of the present invention is a wafer processing device that includes a first holding unit having a first holding surface that holds the first side of the wafer, a second holding unit having a second holding surface facing the first holding unit, a supply unit that supplies a liquid protective material to at least one of the second side of the wafer held by the first holding unit or the second holding surface, a moving mechanism that brings the first holding unit and the second holding unit closer together to cover the second side of the wafer with the protective material, a hardening unit that hardens the protective material, and a shape control unit that applies an external force to the wafer or the protective material along the thickness direction of the wafer and controls the shape of the wafer or the protective material in the thickness direction. [Effects of the Invention]

[0012] In the present invention, before the shapes of the wafer and the liquid protective member are fixed by hardening the liquid protective member in the hardening step, an external force is applied to the wafer or the liquid protective member in the shape control step to control the shape of the wafer, so that the shape of the wafer can be controlled and fixed by the protective member in the hardening step. Therefore, the present invention makes it possible to obtain a wafer with a desired shape more preferably than conventional methods. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a side cross-sectional view showing an example of the configuration of a wafer processing apparatus according to the first embodiment. [Figure 2] FIG. 2 is a side view showing an example of a wafer to be processed by the wafer processing method and wafer processing apparatus according to the first embodiment. [Figure 3] 3 is a cross-sectional view showing a first holding unit of the wafer processing apparatus of FIG. [Figure 4] 4 is a bottom view showing a first holding unit of the wafer processing apparatus of FIG. 1. FIG. [Figure 5] FIG. 5 is a flowchart showing the processing procedure of the wafer processing method according to the first embodiment. [Figure 6]FIG. 6 is a side cross-sectional view illustrating the holding step of FIG. [Figure 7] FIG. 7 is a side cross-sectional view illustrating the shape control step of FIG. [Figure 8] FIG. 8 is a side cross-sectional view illustrating the coating step of FIG. [Figure 9] FIG. 9 is a side cross-sectional view illustrating the curing step of FIG. [Figure 10] 10A to 10C are side cross-sectional views illustrating steps after the hardening step in the wafer processing method of FIG. [Figure 11] FIG. 11 is a cross-sectional view showing a first holding unit of the wafer processing apparatus according to the second embodiment. [Figure 12] FIG. 12 is a cross-sectional view showing a first holding unit of the wafer processing apparatus according to the third embodiment. [Figure 13] FIG. 13 is a cross-sectional view showing a first holding unit of the wafer processing apparatus according to the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0014] Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Furthermore, various omissions, substitutions, or modifications of the configuration can be made within the scope of the gist of the present invention.

[0015] [Embodiment 1] A wafer processing method and wafer processing apparatus 1 according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a side cross-sectional view showing an example of the configuration of the wafer processing apparatus 1 according to the first embodiment. FIG. 2 is a side view showing an example of a wafer 100 to be processed by the wafer processing method and wafer processing apparatus 1 according to the first embodiment. FIG. 3 is a cross-sectional view showing a first holding unit 10 of the wafer processing apparatus 1 of FIG. 1. FIG. 4 is a bottom view showing the first holding unit 10 of the wafer processing apparatus 1 of FIG. 1.

[0016] The wafer processing method according to the first embodiment is an example of an operational process of the wafer processing apparatus 1 according to the first embodiment shown in Fig. 1, and is a method of processing the wafer 100 shown in Fig. 2. The wafer processing apparatus 1 according to the first embodiment shown in Fig. 1 is an example of an apparatus that performs the wafer processing method according to the first embodiment, and is an apparatus that processes the wafer 100 shown in Fig. 2.

[0017] The wafer 100 to be processed by the wafer processing method and wafer processing apparatus 1 according to the first embodiment is, for example, a disk-shaped semiconductor wafer or optical device wafer made of a base material such as silicon, sapphire, or gallium arsenide. As shown in FIG. 2 , the wafer 100 has a first surface 101 and a second surface 102 on the back side of the first surface 101. The wafer 100 may have a plurality of planned division lines formed in a grid pattern on the flat first surface 101 or the second surface 102, and devices may be formed in areas defined by the plurality of planned division lines. The present invention is not limited to this; the wafer 100 may not have planned division lines, and devices may not be formed on the wafer 100. In the example of the first embodiment shown in FIG. 2 , the wafer 100 is formed in a shape with warpage and undulation at the edge and deformation toward the second surface 102 in the region on the right side of the page in FIG. 2 in an unloaded state in which no load other than atmospheric pressure is applied.

[0018] As shown in FIG. 1, the wafer processing apparatus 1 of embodiment 1 includes a first holding section 10, a second holding section 20, a supply section 30, a moving mechanism 40, a hardening section 50, and a shape control section 61.

[0019] As shown in FIG. 1 , the first holding unit 10 has a first holding surface 11 that holds the first side 101 of the wafer 100. The first holding unit 10 is formed in a disk shape, and the surface facing downward serves as the first holding surface 11 that suction-holds the first side 101 of the wafer 100 from above. As shown in FIGS. 3 and 4 , the first holding unit 10 has a plurality of openings 12 formed on the first holding surface 11. In the first embodiment, as shown in FIG. 4 , the plurality of openings 12 formed on the first holding surface 11 are arranged in a lattice pattern at equal intervals on the first holding surface 11 in both a first direction parallel to the X-axis direction in FIG. 4 and a second direction orthogonal to the first direction and parallel to the Y-axis direction in FIG. 4 . Note that while FIG. 3 illustrates ten openings 12 formed along the X-axis direction and FIG. 4 illustrates seven openings 12 formed along the X-axis direction, in reality, the same number of openings 12 are formed along the X-axis direction.

[0020] As shown in FIG. 3 , the first holding unit 10 has a plurality of communication passages 13 formed therein that communicate between one or more openings 12 and the suction source 18 and the fluid supply source 19. One side of each communication passage 13 is in communication with one or more openings 12, and the other side is in communication with the suction source 18 and the fluid supply source 19 via a valve 14. In the first embodiment, as shown in FIGS. 3 and 4 , one side of the communication passage 13 is in communication with all of the openings 12 positioned at the same location in the first direction, and the number of communication passages 13 is the same as the number of openings 12 arranged along the first direction. However, the present invention is not limited to this. One side of the communication passages 13 may be in communication with all of the openings 12 positioned at the same location in the second direction, and the number of communication passages 13 may be the same as the number of openings 12 arranged along the second direction, or a communication passage may be formed for each opening 12. All of the openings 12 may be divided into any number of groups, and one side of the communication passages 13 may be in communication with all of the openings 12 belonging to one group, and the number of communication passages 13 may be the same as the number of the divided groups. 3, one valve 14 is provided for each communication passage 13, i.e., a plurality of valves 14 are provided in the same number as the number of communication passages 13. One suction source 18 and one fluid supply source 19 are provided.

[0021] The valve 14 is capable of switching whether the other side of the communicating passage 13 in which the valve 14 is provided is in communication with and connected to the suction source 18 or the fluid supply source 19, and is capable of switching between an open state in which the communicating passage 13 in which the valve 14 is provided is opened and a closed state in which communication within the communicating passage 13 is blocked, and in the open state, the amount of opening within the communicating passage 13 in which the valve 14 is provided can be controlled and adjusted.

[0022] Valve 14 switches the other side of communication passage 13 in which valve 14 is provided to a state in which it communicates and is connected to suction source 18, thereby introducing negative pressure 401 (see FIG. 6, etc.) onto first holding surface 11 from suction source 18 via communication passage 13 in which valve 14 is provided and through opening 12 in which communication passage 13 communicates and is connected to one side of communication passage 13, thereby creating a state in which suction is possible. Valve 14 switches the other side of communication passage 13 in which valve 14 is provided to a state in which it communicates and is connected to fluid supply source 19, thereby creating a state in which fluid 402 (see FIG. 7, etc.) can be supplied from fluid supply source 19 to first holding surface 11 via communication passage 13 in which valve 14 is provided and through opening 12 in which communication passage 13 communicates and is connected to one side of communication passage 13.

[0023] By switching the valve 14 to an open state that opens the inside of the communicating passage 13 in which the valve 14 is provided, a state is established in which negative pressure 401 is introduced onto the first holding surface 11 from the suction source 18 or fluid supply source 19 that communicates and connects to the other side of the communicating passage 13 in which the valve 14 is provided, via the communicating passage 13 in which the valve 14 is provided, through the opening 12 that communicates and connects to one side of the communicating passage 13. By switching the valve 14 to a closed state that blocks communication within the communicating passage 13 in which the valve 14 is provided, a state is established in which the suction or supply of fluid 402 by introducing negative pressure 401 onto the first holding surface 11 from the suction source 18 or fluid supply source 19 that communicates and connects to the other side of the communicating passage 13 in which the valve 14 is provided is stopped.

[0024] When the valve 14 is switched to an open state in which the communicating passage 13 in which the valve 14 is provided is opened, the valve 14 controls and adjusts the amount of opening, thereby controlling and adjusting the magnitude (suction strength) of the negative pressure 401 introduced onto the first holding surface 11 or the flow rate of the fluid 402 supplied from the suction source 18 or fluid supply source 19 to which the other side of the communicating passage 13 in which the valve 14 is provided communicates and connects, via the communicating passage 13 in which the valve 14 is provided, through the opening 12 to which one side of the communicating passage 13 communicates and connects.

[0025] In the first embodiment, a vacuum pump or the like is used as the suction source 18. The fluid 402 supplied by the fluid supply source 19 is preferably one that has little chemical effect on the wafer 100 and the liquid protective member 301, and in the first embodiment, a gas such as compressed air is used.

[0026] When all the valves 14 are switched so that the other side of the connecting passage 13 is connected to the suction source 18 and is in an open state, the first holding surface 11 of the first holding part 10 functions as a suction holding surface that suction-holds the first surface 101 of the wafer 100 facing the first holding surface 11 by negative pressure 401 introduced onto the first holding surface 11 from the suction source 18 through all the connecting passages 13 and all the openings 12.

[0027] 1, the second holding part 20 has a second holding surface 21 that faces the first holding surface 11 of the first holding part 10 along the vertical direction (the Z-axis direction in FIG. 1). When the first holding surface 11 of the first holding part 10 holds the first surface 101 of the wafer 100, the second holding surface 21 of the second holding part 20 faces the second surface 102 of the wafer 100 along the vertical direction. The second holding part 20 is formed in a substantially disk shape, and a recess 22 that is slightly larger than the outline of the wafer 100 in a plan view is formed on the surface facing upward, and the bottom surface of the recess 22 becomes the second holding surface 21.

[0028] The second holding unit 20 holds, from below, the sheet 110 supplied from a sheet supply unit (not shown) on the second holding surface 21. In the first embodiment, the sheet 110 is formed by the sheet supply unit (not shown) to be slightly larger than the second holding surface 21 of the second holding unit 20, and is transported onto the second holding surface 21 of the second holding unit 20. The second holding unit 20 receives the liquid protective material 301 supplied from the supply unit 30 onto the sheet 110 held on the second holding surface 21. In the first embodiment, the second holding unit 20 has a curing unit 50 provided vertically below it and formed integrally with the curing unit 50. The second holding unit 20 receives the curing action of the liquid protective material 301 supplied onto the sheet 110 from the curing unit 50 below, via the sheet 110 held on the second holding surface 21.

[0029] In the first embodiment in which an ultraviolet-curable resin is used as the liquid protective member 301, the second holding unit 20 and the sheet 110 are made of a material that transmits at least a portion of the ultraviolet light irradiated from the curing unit 50 below. In this case, the second holding unit 20 is, for example, a glass table or the like made of a material such as glass that is transparent to ultraviolet light, and the sheet 110 is made of, for example, a material such as polyolefin (PO) or polyethylene terephthalate (PET) that is transparent to ultraviolet light.

[0030] It should be noted that the present invention is not limited to this, and for example, when a thermosetting resin is used as the liquid protective member 301, the second holding member 20 and the sheet 110 are formed from a material that suitably transmits heat from the curing portion 50 below. Furthermore, when a mixture of an ultraviolet curing resin and a thermosetting resin is used as the liquid protective member 301, the second holding member 20 and the sheet 110 are formed from a material that transmits at least a portion of the ultraviolet rays irradiated from the curing portion 50 below and that suitably transmits heat from the curing portion 50 below.

[0031] The supply unit 30 supplies the liquid protective member 301 to at least one of the second surface 102 of the wafer 100 held by the first holding unit 10 and the second holding surface 21 of the second holding unit 20. In the first embodiment, the supply unit 30 supplies the liquid protective member 301 toward the second holding surface 21 of the second holding unit 20, but the present invention is not limited to this, and the liquid protective member 301 may be supplied toward the second surface 102 of the wafer 100 held by the first holding unit 10.

[0032] 1 , in the first embodiment, the supply unit 30 includes a supply source 31 of a liquid protective member 301 and a nozzle 32 that introduces the liquid protective member 301 from the supply source 31 toward the second holding surface 21 of the second holding unit 20. In the first embodiment, the liquid protective member 301 supplied by the supply unit 30 is preferably a liquid resin having a viscosity of, for example, 0.5 Pa s or more and 400 Pa s or less.

[0033] In the first embodiment, the liquid protective member 301 supplied by the supply unit 30 is an ultraviolet-curable resin. However, the present invention is not limited to this, and a thermosetting resin may also be used. When an ultraviolet-curable resin is used, the liquid protective member 301 supplied by the supply unit 30 is composed of, for example, a curable resin component such as an ultraviolet-curable resin and a binder polymer component such as an acrylic polymer. When a thermosetting resin is used, the liquid protective member 301 supplied by the supply unit 30 is composed of a thermosetting resin component such as an epoxy resin or a phenol resin and a binder polymer component such as an acrylic polymer. The liquid protective member 301 supplied by the supply unit 30 may also be a mixture of an ultraviolet-curable resin and a thermosetting resin.

[0034] The nozzle 32 has a tip side facing the second holding surface 21 of the second holding unit 20, and a base side communicating with and connected to a supply source 31 that supplies the liquid protective material 301. The nozzle 32 can be rotated around a predetermined portion on the base side as a fulcrum, thereby moving the area toward which the tip side faces between a supply area within the second holding surface 21 of the second holding unit 20 and a retracted area outside the second holding surface 21 of the second holding unit 20, and can also move the area toward which the tip side faces as needed within the second holding surface 21 of the second holding unit 20. By moving the area toward which the tip side faces within the second holding surface 21 of the second holding unit 20 as needed in this way, the nozzle 32 can change and adjust the amount of liquid protective material 301 to be supplied for each area on the second holding surface 21 of the second holding unit 20.

[0035] The moving mechanism 40 brings the first holding unit 10 and the second holding unit 20 relatively close to each other to cover the second surface 102 of the wafer 100 with the liquid protective material 301. In the first embodiment, the moving mechanism 40 is provided in the first holding unit 10 and moves the first holding unit 10 relatively close to the second holding unit 20 in the vertical direction, thereby bringing the second surface 102 of the wafer 100 held on the first holding surface 11 of the first holding unit 10 close to, contacting, and pressing the liquid protective material 301 supplied onto the second holding surface 21 of the second holding unit 20 by the supply unit 30. In the first embodiment, the moving mechanism 40 is a known ball screw mechanism having a motor, a ball screw, and a guide. The moving mechanism 40 can control the relative moving speed of the first holding unit 10 with respect to the second holding unit 20. Furthermore, the moving mechanism 40 can control the pressing force that presses the second surface 102 of the wafer 100 held by the first holding part 10 against the liquid protective member 301 on the second holding surface 21 .

[0036] The hardening unit 50 hardens the liquid protective member 301 supplied to at least one of the second surface 102 of the wafer 100 held by the first holding unit 10 and the second holding surface 21 of the second holding unit 20, to form a hardened protective member 302 (see FIGS. 9 and 10 ). In the first embodiment, the hardening unit 50 is provided below the second holding surface 21 of the second holding unit 20 and hardens the liquid protective member 301 from the second holding surface 21 side of the second holding unit 20, but the present invention is not limited to this. For example, the hardening unit 50 may be provided in the first holding unit 10 and harden the liquid protective member 301 from the second surface 102 side of the wafer 100 held by the first holding unit 10.

[0037] In the first embodiment, an ultraviolet curing resin is used as the liquid protective member 301, and therefore a configuration is used in which a plurality of ultraviolet irradiating units 51 (see FIG. 9) that irradiate ultraviolet rays 52 (see FIG. 9) are arranged horizontally as the curing unit 50. The ultraviolet irradiating units 51 are, for example, ultraviolet LEDs. However, the present invention is not limited to this, and for example, when a thermosetting resin is used as the liquid protective member 301, a heater is used as the curing unit 50.

[0038] The shape control unit 61 applies an external force to the wafer 100 or the liquid protective member 301 along the thickness direction of the wafer 100, thereby controlling the shape in the thickness direction of the wafer 100 or the liquid protective member 301. Here, controlling the shape in the thickness direction of the wafer 100 or the liquid protective member 301 includes, in this specification, controlling shape elements of the outer shape of the wafer 100 or the liquid protective member 301, such as the straightness (straightness), flatness (irregularity), circularity (roundness), and cylindricity (roundness and straightness) of each of the first surface 101 and the second surface 102, as well as controlling attitude elements of the outer shape of the wafer 100 or the liquid protective member 301, such as the parallelism, squareness, and inclination between the first surface 101 and the second surface 102 (controlling the attitude). The shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held by the first holding surface 11, thereby controlling the shape of the wafer 100 in the thickness direction, but the present invention is not limited to this, and the shape control unit 61 may also apply an external force along the thickness direction of the wafer 100 to the liquid protective member 301.

[0039] In embodiment 1, the shape control unit 61 realizes the function of applying an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11 using multiple openings 12, multiple connecting passages 13, multiple valves 14, suction source 18 and fluid supply source 19 formed in the first holding unit 10, thereby controlling the shape of the wafer 100 in the thickness direction.

[0040] Specifically, the shape control unit 61 switches the valve 14 provided in the communication passage 13 that communicates with and connects to an opening 12 formed in an area on the first holding surface 11 corresponding to the desired area of ​​the wafer 100 held by the first holding surface 11 to a state in which the other side of the communication passage 13 communicates with and is connected to a suction source 18, thereby introducing negative pressure 401 from the suction source 18 through the communication passage 13 and the opening 12 onto the first holding surface 11, thereby applying an external force to the wafer 100 held by the first holding surface 11 in the desired area in a direction approaching the first holding surface 11 (vertically upward), thereby deforming the wafer 100 in the direction approaching the first holding surface 11 (vertically upward).

[0041] Furthermore, by controlling and adjusting the opening amount of this valve 14, the shape control unit 61 controls and adjusts the magnitude (suction strength) of the negative pressure 401 introduced onto the first holding surface 11 from the suction source 18 through the opening 12, thereby controlling and adjusting the magnitude of the external force applied to the wafer 100 held on the first holding surface 11 in the desired area in the direction approaching the first holding surface 11 (vertically upward), and controls and adjusts the deformation in the direction approaching the first holding surface 11 (vertically upward) to the desired magnitude.

[0042] In addition, the shape control unit 61 switches the valve 14 provided in the communication passage 13 that communicates with and connects to an opening 12 formed in an area on the first holding surface 11 corresponding to the desired area of ​​the wafer 100 held by the first holding surface 11 to a state in which the other side of the communication passage 13 communicates with and is connected to a fluid supply source 19, thereby supplying fluid 402 from the fluid supply source 19 onto the first holding surface 11 through the communication passage 13 and the opening 12, thereby applying an external force to the wafer 100 held by the first holding surface 11 in the desired area in a direction away from the first holding surface 11 (vertically downward), thereby deforming the wafer 100 in the direction away from the first holding surface 11 (vertically downward).

[0043] In addition, by controlling and adjusting the opening amount of this valve 14, the shape control unit 61 controls and adjusts the flow rate of the fluid 402 supplied from the fluid supply source 19 onto the first holding surface 11 through the opening 12, thereby controlling and adjusting the magnitude of the external force applied to the wafer 100 held on the first holding surface 11 in the desired area in a direction away from the first holding surface 11 (vertically downward), and controls and adjusts the deformation in the direction away from the first holding surface 11 (vertically downward) to the desired magnitude.

[0044] The wafer processing apparatus 1 includes a control unit 60 that controls each section and each mechanism to cause the wafer processing apparatus 1 according to embodiment 1 to perform each operation. The control unit 60 includes a shape control section 61.

[0045] The control unit 60 also acquires and stores wafer shape information 201, which is information about the shape of the wafer 100 when it is not held by the first holding unit 10, i.e., the shape of the wafer 100 in an unloaded state where no load other than atmospheric pressure is applied. The wafer shape information 201 is, for example, data representing the wafer 100 in a substantially unloaded state where no load other than atmospheric pressure is applied, using a three-dimensional model. In the example of embodiment 1 shown in FIG. 2 , the data reflects that the wafer 100 has been formed into a shape with warpage and undulations at its edge and deformation toward the second surface 102. The control unit 60 may receive and store the wafer shape information 201 input by an operator of the wafer processing device 1 via an input unit (not shown). The control unit 60 may also acquire and store the wafer shape information 201 by measuring the shape of the wafer 100 in an unloaded state where no load other than atmospheric pressure is applied, using a measurement unit (not shown).

[0046] The control unit 60 also acquires and stores wafer shape control information 202, which is information on processing by the shape control unit 61 in accordance with the shapes of the wafer 100 under various unloaded conditions. The wafer shape control information 202 is linked to information on processing by the shape control unit 61 for controlling the wafer 100 to approximate the shape of the wafer 100 under the unloaded condition when the wafer 100 is held in the first holding unit 10, for each of the shapes of the wafer 100 under various unloaded conditions. Here, in the first embodiment, the information on processing by the shape control unit 61 is connection destination switching information, open / close switching information, and opening amount information for each valve 14. The wafer shape control information 202 may be input and stored in the control unit 60 by an operator of the wafer processing apparatus 1 via an input unit (not shown). Furthermore, the control unit 60 may use an investigation unit (not shown) to investigate information on processing by the shape control unit 61 for controlling the wafer 100 to approximate its shape under various no-load conditions, and may acquire and store the wafer shape control information 202. Furthermore, the control unit 60 may acquire and store the wafer shape control information 202 from information saved in an arbitrary server.

[0047] The control unit 60 is a computer having an arithmetic processing device with a microprocessor such as a CPU (central processing unit), a storage device with memory such as a ROM (read only memory) or RAM (random access memory), and an input / output interface device. The arithmetic processing device of the control unit 60 performs arithmetic processing in accordance with a computer program stored in the storage device, and outputs control signals for controlling the wafer processing device 1 to each part and each mechanism of the wafer processing device 1 via the input / output interface device.

[0048] Next, this specification will describe a wafer processing method according to embodiment 1, which is an example of an operational process performed by the wafer processing apparatus 1 according to embodiment 1, with reference to the drawings. FIG. 5 is a flowchart showing the processing steps of the wafer processing method according to embodiment 1. FIG. 6 is a side cross-sectional view illustrating the holding step 1002 of FIG. 5. FIG. 7 is a side cross-sectional view illustrating the shape control step 1004 of FIG. 5. FIG. 8 is a side cross-sectional view illustrating the coating step 1005 of FIG. 5. FIG. 9 is a side cross-sectional view illustrating the hardening step 1006 of FIG. 5. FIG. 10 is a side cross-sectional view illustrating each step after the hardening step 1006 in the wafer processing method of FIG. 5. Note that FIGS. 6 to 10 omit illustration of some components of the wafer processing apparatus 1 according to embodiment 1. As shown in FIG. 5, the wafer processing method according to embodiment 1 includes an obtaining step 1001, a holding step 1002, a protective member supply step 1003, a shape control step 1004, a coating step 1005, and a hardening step 1006.

[0049] The acquiring step 1001 is a step of acquiring information about the shape of the wafer 100 when it is not held by the first holding unit 10. In the acquiring step 1001, for example, the control unit 60 measures the shape of the wafer 100 in an unloaded state in which no load other than atmospheric pressure is applied, using a measurement unit (not shown), and acquires and stores wafer shape information 201. Note that the acquiring step 1001 can be omitted in cases where substantially the same information as the wafer shape information 201 about the wafer 100 to be processed by the wafer processing method according to the first embodiment has been acquired, for example, because the wafer shape information 201 about wafers 100 in the same lot as the wafer 100 to be processed by the wafer processing method according to the first embodiment has already been acquired. If the acquiring step 1001 is not omitted and is to be performed, it is performed before the holding step 1002.

[0050] The holding step 1002 is a step in which the first side 101 of the wafer 100 is held by the first holding surface 11 of the first holding part 10. In the holding step 1002, first, the control unit 60 controls the transfer unit (not shown) to transfer the wafer 100 toward the first holding surface 11 of the first holding part 10. Next, in the holding step 1002, the control unit 60 controls the first holding part 10 to switch all of the valves 14 so that the other side of the communicating passages 13 is connected to the suction source 18 and is in an open state, and negative pressure 401 is introduced onto the first holding surface 11 from the suction source 18 through all the communicating passages 13 and all the openings 12, as shown in FIG. 6 , thereby suctioning the first side 101 of the wafer 100 facing the first holding surface 11 on the first holding surface 11 by the first holding part 10.

[0051] The protective material supply step 1003 is a step of supplying a liquid protective material 301 to at least one of the second surface 102 of the wafer 100 held by the first holding part 10 and the second holding surface 21 of the second holding part 20 facing the first holding part 10.

[0052] In the protective material supplying step 1003, in the first embodiment, as shown in FIG. 6 , first, a sheet supplying unit (not shown) supplies a sheet 110 formed slightly larger than the second holding surface 21 of the second holding unit 20 onto the second holding surface 21 of the second holding unit 20, and then the supplying unit 30 supplies an appropriate amount of liquid protective material 301 onto the sheet 110 arranged on the second holding surface 21 of the second holding unit 20. Therefore, the protective material supplying step 1003 may be performed before or after the holding step 1002. Note that the present invention is not limited to this, and the liquid protective material 301 may be supplied toward the second surface 102 of the wafer 100 held by the first holding unit 10 after the holding step 1002. Furthermore, in the present invention, the supply of the sheet 110 onto the second holding surface 21 of the second holding unit 20 may be omitted, and the liquid protective material 301 may be supplied directly onto the second holding surface 21 of the second holding unit 20.

[0053] The shape control step 1004 is a step that, before the hardening step 1006, applies an external force to at least one of the wafer 100 held by the first holding unit 10 and the liquid protective material 301 supplied in the protective material supplying step 1003, thereby controlling the shape of at least one of the wafer 100 held by the first holding unit 10 and the liquid protective material 301. In the first embodiment, the shape control step 1004 is performed at least after the holding step 1002 is performed in order to apply an external force along the thickness direction of the wafer 100 to the wafer 100 held by the first holding surface 11 and control the shape of the wafer 100 in the thickness direction, but the present invention is not limited to this. In the case where an external force along the thickness direction of the wafer 100 is applied to the liquid protective material 301 supplied in the protective material supplying step 1003 to control the shape of the wafer 100 in the thickness direction, the shape control step 1004 is performed at least after the protective material supplying step 1003 is performed.

[0054] 7 , in the shape control step 1004, the shape control unit 61 applies an external force to the wafer 100 held on the first holding surface 11 along the thickness direction of the wafer 100 by at least one of supplying and suctioning the fluid 402 from the first holding surface 11 using the multiple openings 12, multiple communication paths 13, multiple valves 14, suction source 18, and fluid supply source 19 formed in the first holding unit 10, thereby controlling the shape of the wafer 100 in the thickness direction. Note that the shape control step 1004 is not limited to this in the present invention, and may, for example, apply an external force to the liquid protective member 301 along the thickness direction of the wafer 100 by at least one of supplying and suctioning the fluid 402 from the second holding surface 21, similar to the first embodiment in which at least one of supplying and suctioning the fluid 402 from the first holding surface 11 is performed. In addition, the shape control step 1004 may apply an external force along the thickness direction of the wafer 100 to both the wafer 100 held by the first holding surface 11 and the liquid protective member 301, thereby controlling the shape of the wafer 100 in the thickness direction.

[0055] In the shape control step 1004, in the first embodiment, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 in a direction to bring the shape of the wafer 100 closer to the shape of the wafer 100 (wafer shape information 201) acquired in the acquisition step 1001 or to wafer shape information 201 that can be regarded as information substantially similar to the shape of the wafer 100, thereby controlling the shape in the thickness direction of the wafer 100. Specifically, in the shape control step 1004, the shape control unit 61 acquires processing information for control to bring the shape of the wafer 100 closer to the shape conforming to the wafer shape information 201, based on the wafer shape information 201 acquired in the acquisition step 1001 or previously and the wafer shape control information 202, and applies an external force along the thickness direction of the wafer 100 so as to bring the shape of the wafer 100 closer to the shape conforming to the wafer shape information 201, by switching the connection destination, switching between open and closed states, and adjusting the opening amount for each valve 14 according to the processing information.

[0056] In the shape control step 1004, in the example of the first embodiment shown in FIG. 7, in order to approximate the shape of the wafer 100 having warpage and undulations at the end and deformation toward the second surface 102 in the region on the right side of the paper in an unloaded state in which no load other than atmospheric pressure is applied, as shown in FIG. 2, the shape control unit 61 controls the valve 14 provided in the communication path 13 that communicates and connects with the opening 12 formed in the region facing the region corresponding to the deformation, with the other side of the communication path 13 communicating and connected with the fluid supply source 19. By switching to this state and controlling and adjusting the amount of opening, the magnitude of the flow rate of the fluid 402 supplied from the fluid supply source 19 through the opening 12 via the connecting passage 13 is controlled and adjusted, whereby an external force in a direction away from the first holding surface 11 (vertical downward direction) is applied to the wafer 100 held on the first holding surface 11 in the area corresponding to the deformation, and the magnitude of the external force is controlled and adjusted, causing the wafer 100 to undergo a deformation similar to the deformation in the direction away from the first holding surface 11 (vertical downward direction).

[0057] The covering step 1005 is a step in which the first holding surface 11 and the second holding surface 21 are brought relatively close to each other, and the second surface 102 of the wafer 100 is covered with the liquid protective material 301. The covering step 1005 is performed after the holding step 1002, the protective material supply step 1003, and the shape control step 1004 have been performed. In the covering step 1005, in embodiment 1, the moving mechanism 40 moves the first holding unit 10 closer to the second holding unit 20 in the vertical direction, and the second surface 102 of the wafer 100 held on the first holding surface 11 of the first holding unit 10 and whose shape is controlled by the shape control unit 61 is brought closer to, contacted with, and pressed against the liquid protective material 301 supplied onto the second holding surface 21 of the second holding unit 20 by the supply unit 30, thereby deforming the liquid protective material 301 into a shape (posture) that corresponds to the shape of the wafer 100 whose shape is controlled by the shape control unit 61 and is close to that shape, as shown in Figure 8.

[0058] In embodiment 1, the shape of the wafer 100 is controlled in the shape control step 1004, and the shape of the liquid protective material 301 is deformed in the coating step 1005 to conform to the shape of the wafer 100 controlled in the shape control step 1004. However, the present invention is not limited to this, and the shape of the liquid protective material 301 may be controlled in the shape control step 1004, and the shape of the wafer 100 may be deformed in the coating step 1005 to conform to the shape of the liquid protective material 301 controlled in the shape control step 1004.

[0059] The curing step 1006 is a step in which the liquid protective member 301 is cured to form a cured protective member 302. The curing step 1006 is performed after the covering step 1005. In the curing step 1006, in the first embodiment, as shown in FIG. 9 , the curing unit 50 uses multiple ultraviolet irradiation units 51 to irradiate ultraviolet rays 52 from the second holding surface 21 side of the second holding unit 20 toward the liquid protective member 301 containing an ultraviolet-curable resin, thereby curing the liquid protective member 301 with ultraviolet light to form a cured protective member 302.

[0060] It should be noted that the present invention is not limited to this in the curing step 1006, and the liquid protective member 301 containing the ultraviolet curable resin may be cured by irradiating it with ultraviolet light from the first holding surface 11 side. Also, in the curing step 1006, the liquid protective member 301 containing the thermosetting resin may be cured by heating it from the second holding surface 21 side or the first holding surface 11 side of the second holding part 20.

[0061] In the curing step 1006, the liquid protective member 301 is cured to form a cured protective member 302, thereby bonding the second surface 102 of the wafer 100 to the protective member 302 and bonding the protective member 302 to the sheet 110, thereby integrating the wafer 100, the protective member 302, and the sheet 110. Since the curing step 1006 is performed after the covering step 1005, the wafer 100, the protective member 302, and the sheet 110 are integrated together while maintaining the shapes of the wafer 100 held by the first holding unit 10 controlled through the steps up to the covering step 1005 and the liquid protective member 301 supplied in the protective member supplying step 1003. In other words, the curing step 1006 integrates the wafer 100, the protective member 302, and the sheet 110 while maintaining a state that is substantially similar to a substantially unloaded state in which as little load as possible is applied to the wafer 100 except for atmospheric pressure.

[0062] The wafer processing method according to embodiment 1 may further include, after performing the hardening step 1006, a first surface planarizing step 1007, a second surface exposing step 1008, a second surface planarizing step 1009, and a wafer removal step 1010, as shown in FIG. 10 .

[0063] 10, after the hardening step 1006 is performed, the first surface 101 of the wafer 100 is flattened on the side opposite to the second surface 102 to which the protective member 302 is bonded. In the first surface flattening step 1007, for example, the wafer 100 is held from the side of the second surface 102 to which the protective member 302 is bonded, and a grinding wheel having grinding stones arranged in an annular shape is pressed against the exposed first surface 101 of the wafer 100 while rotating around its axis, thereby grinding and flattening the first surface 101 of the wafer 100 to form a flat first surface 101-2.

[0064] 10 , after the first-surface planarization step 1007 is performed, the second surface 102 of the wafer 100, which is covered by the bonded protective member 302, is exposed by removing the protective member 302. In the second-surface exposing step 1008, for example, the protective member 302 and the sheet 110 are peeled off from the second surface 102 of the wafer 100, and a second sheet 111 is fixed to the first surface 101-2 of the wafer 100. Here, the second sheet 111 is, for example, an adhesive tape having a base layer made of a synthetic resin and a glue layer (adhesive layer) laminated on one surface of the base layer and made of an adhesive synthetic resin such as an adhesive.

[0065] 10 , after the second-surface exposing step 1008 is performed, the second surface 102 of the wafer 100 exposed in the second-surface exposing step 1008 is flattened. In the second surface flattening step 1009, for example, similarly to the first surface flattening step 1007, the wafer 100 is held from the side of the first surface 101-2 to which the second sheet 111 is fixed, and a grinding wheel having grinding stones arranged in an annular shape is pressed against the exposed second surface 102 of the wafer 100 while rotating around its axis, thereby grinding and flattening the second surface 102 of the wafer 100 to form a flat second surface 102-2.

[0066] The wafer removal step 1010 is a step of removing the wafer 100, whose both surfaces respectively become the flat first surface 101-2 and the flat second surface 102-2, after the second surface flattening step 1009. In the wafer removal step 1010, for example, the second sheet 111 is peeled off from the first surface 101-2 of the wafer 100, thereby removing the wafer 100, whose both surfaces respectively become the flat first surface 101-2 and the flat second surface 102-2.

[0067] The wafer processing method and wafer processing apparatus 1 of embodiment 1 having the above-described configuration controls the shape of the wafer 100 by applying an external force to the wafer 100 or the liquid protective member 301 in shape control step 1004 before fixing the shapes of the wafer 100 and the liquid protective member 301 (hardened protective member 302) by hardening the liquid protective member 301 to form the protective member 302 by the hardening section 50 in hardening step 1006, so that the shape of the wafer 100 can be fixed in a state in which it has been controlled to the desired shape by the protective member 302 in hardening step 1006. Therefore, the wafer processing method and wafer processing apparatus 1 according to embodiment 1 control and fix the shape of the wafer 100 in an unloaded state where no load other than atmospheric pressure is applied, thereby fixing the wafer 100 in a state in which residual stresses that cause swells and warping inside the wafer 100 are reduced and suppressed, thereby achieving the advantageous effect of reducing changes in the swells and warping of the wafer 100 that occur after any processing, and making it possible to more suitably obtain a wafer 100 with the desired shape than before.

[0068] The wafer processing method and wafer processing apparatus 1 according to embodiment 1 can be modified to control and fix the shape of the wafer 100 under a load condition that causes the desired swell or warpage, thereby hardening and fixing the liquid protective member 301 in a state in which the wafer 100 has residual stress that causes the desired swell or warpage inside. Therefore, the wafer 100 after fixing can be subjected to any processing such as cutting (dicing), grinding, laser processing, plasma processing, etc., and after the any processing, the fixation by the hardened protective member 302 can be released to release the residual stress and cause the desired swell or warpage to appear, thereby obtaining a wafer 100 of the desired shape.

[0069] Furthermore, in the wafer processing method and wafer processing apparatus 1 according to the first embodiment, in the shape control step 1004, the shape control unit 61 at least supplies and sucks the fluid 402 from the first holding surface 11 by using the plurality of openings 12, the plurality of communication paths 13, the plurality of valves 14, the suction source 18, and the fluid supply source 19 formed in the first holding unit 10. As a result, the wafer processing method and wafer processing apparatus 1 according to the first embodiment can control the shape of the wafer 100 by applying an external force to the wafer 100, which has higher rigidity than the liquid protective member 301, and can thereby suitably fix the shape of the wafer 100 in a controlled state to a desired shape, and more specifically, can suitably achieve obtaining the wafer 100 in a desired shape more suitably than before.

[0070] Furthermore, in the wafer processing method and wafer processing apparatus 1 according to the first embodiment, in the shape control step 1004, instead of the shape control unit 61 at least one of supplying and suctioning the fluid 402 from the first holding surface 11, the second holding surface 21 may be provided with a plurality of openings 12, a plurality of communication paths 13, a plurality of valves 14, a suction source 18, and a fluid supply source 19 similar to those of the first holding surface 11, and at least one of supplying and suctioning the fluid 402 from the second holding surface 21. In this case, the wafer processing method and wafer processing apparatus 1 according to the first embodiment thereby apply an external force to the liquid protective member 301 supplied onto the second holding surface 21 to control the shape of the wafer 100, thereby fixing the wafer 100 in a state in which the shape of the wafer 100 is controlled to a desired shape. More specifically, it is possible to more suitably obtain a wafer 100 having a desired shape than in the past.

[0071] Furthermore, the wafer processing method and wafer processing apparatus 1 according to the first embodiment execute an acquisition step 1001 in which the control unit 60 acquires information about the shape of the wafer 100 in a state where the wafer is not held by the first holding unit 10, i.e., in an unloaded state where no load other than atmospheric pressure is applied, and in a shape control step 1004, the shape control unit 61 applies an external force in a direction to bring the shape of the wafer 100 closer to the shape acquired in the acquisition step 1001. As a result, more specifically, the wafer processing method and wafer processing apparatus 1 according to the first embodiment fix the wafer 100 in a controlled state to the shape of the wafer 100 in an unloaded state where no load other than atmospheric pressure is applied, thereby fixing the wafer 100 in a state where residual stress that causes swell or warpage inside the wafer 100 is reduced and suppressed, thereby reducing changes in the swell or warpage of the wafer 100 that occur after any processing, and making it possible to more suitably obtain a wafer 100 having a desired shape than before.

[0072] [Embodiment 2] A wafer processing method and wafer processing apparatus 1-2 according to embodiment 2 of the present invention will be described with reference to the drawings. Fig. 11 is a cross-sectional view showing a first holding unit 10-2 of the wafer processing apparatus 1-2 according to embodiment 2. In Fig. 11, the same parts as those in embodiment 1 are designated by the same reference numerals, and their description will be omitted.

[0073] The wafer processing method according to the second embodiment is an example of an operational process of the wafer processing apparatus 1-2 according to the second embodiment shown in Fig. 11, and is a method for processing the wafer 100 shown in Fig. 2. The wafer processing apparatus 1-2 according to the second embodiment shown in Fig. 11 is an example of an apparatus that performs the wafer processing method according to the second embodiment, and is an apparatus that processes the wafer 100 shown in Fig. 2.

[0074] As shown in FIG. 11, the wafer processing apparatus 1-2 of embodiment 2 is the wafer processing apparatus 1 of embodiment 1 modified to include a first holding unit 10-2 instead of the first holding unit 10, and the other configurations are the same as those of embodiment 1.

[0075] 11, the first holding unit 10-2 includes a disk-shaped frame 71 having a recess formed therein, a disk-shaped suction unit 72 fitted in the recess, a plurality of piezoelectric elements 73, a voltage application unit 74, a plurality of conductive paths 75 (conductors), and a plurality of switches 76. The suction unit 72 of the first holding unit 10-2 is formed from a porous ceramic or the like having a large number of porous holes, and is connected to a suction source 18 similar to that of the first embodiment via a communicating path 13-2 formed in the frame 71. The exposed surface (lower surface) of the suction unit 72 of the first holding unit 10-2 facing downward constitutes a first holding surface 11 that suction-holds the wafer 100 from above by negative pressure introduced from the suction source 18 via the communicating path 13-2.

[0076] The plurality of piezoelectric elements 73 are arranged on the surface of the adsorption unit 72 opposite to the first holding surface 11. In the second embodiment, the plurality of piezoelectric elements 73 are all formed in the shape of rectangular plates (square plates) of the same size, and are arranged in a grid pattern on the surface of the adsorption unit 72 opposite to the first holding surface 11, with no gaps between them in both a first direction parallel to the X-axis direction in Fig. 11 and a second direction perpendicular to the first direction and parallel to the Y-axis direction in Fig. 11.

[0077] As shown in FIG. 11 , the first holding unit 10-2 has a plurality of conductive paths 75 formed therein that electrically connect one or more piezoelectric elements 73 to a voltage application unit 74. One side of each conductive path 75 is connected to one or more piezoelectric elements 73, and the other side is connected to the voltage application unit 74 via a switch 76. In the second embodiment, as shown in FIG. 11 , one side of each conductive path 75 is connected to all of the piezoelectric elements 73 that are positioned at the same location in the first direction, and the number of conductive paths 75 is the same as the number of the piezoelectric elements 73 arranged along the first direction. However, the present invention is not limited to this. One side of each conductive path 75 may be connected to all of the piezoelectric elements 73 that are positioned at the same location in the second direction, and the number of conductive paths 75 may be the same as the number of the piezoelectric elements 73 arranged along the second direction, or each conductive path may be formed for each piezoelectric element 73. All of the piezoelectric elements 73 may be divided into any number of groups, and one side of each conductive path 75 may be connected to all of the piezoelectric elements 73 that belong to one group, and the number of conductive paths 75 may be the same as the number of the divided groups. 11, one switch 76 is provided for each conductive path 75, i.e., a plurality of switches are provided, the number of which is the same as the number of conductive paths 75. The voltage application unit 74 is, for example, a power source or a battery, and one voltage application unit is provided.

[0078] The switch 76 can be switched between a conductive state in which the conductive path 75 in which the switch 76 is provided is closed to provide electrical continuity, and a cut-off state in which the conductive path 75 is opened to cut off electrical continuity, and in the conductive state, the switch 76 can control and adjust the voltage applied to the piezoelectric element 73 through the conductive path 75 in which the switch 76 is provided.

[0079] By switching the switch 76 to a conductive state in which the conductive path 75 in which the switch 76 is provided is closed, a voltage is applied from the voltage application unit 74 to which the other side of the conductive path 75 in which the switch 76 is provided is connected, via the conductive path 75 in which the switch 76 is provided, to the piezoelectric element 73 connected to one side of the conductive path 75, causing the piezoelectric element 73 to expand and contract along the thickness direction of the wafer 100, thereby changing the position of the first holding surface 11 along the thickness direction of the wafer 100 corresponding to the arrangement position of the piezoelectric element 73. By switching the switch 76 to a blocking state in which the conductive path 75 in which the switch 76 is provided is opened to block conduction, the application of voltage to the piezoelectric element 73 from the voltage application unit 74 to which the other side of the conductive path 75 in which the switch 76 is provided is connected is stopped, and the piezoelectric element 73 is brought into a state in which it stops expanding and contracting along the thickness direction of the wafer 100, thereby maintaining the position of the first holding surface 11 along the thickness direction of the wafer 100 corresponding to the arrangement position of the piezoelectric element 73 in a fixed position.

[0080] When the switch 76 is switched to a conductive state in which the conductive path 75 in which the switch 76 is provided is closed and conductive, the switch 76 controls and adjusts the voltage applied to the piezoelectric element 73 through the conductive path 75 in which the switch 76 is provided, thereby controlling and adjusting the magnitude of expansion and contraction of the piezoelectric element 73 to which voltage is applied from the voltage application section 74 to which the other side of the conductive path 75 in which the switch 76 is provided is connected, and thereby controlling and adjusting the position along the thickness direction of the wafer 100 of the first holding surface 11 corresponding to the placement position of the piezoelectric element 73.

[0081] The wafer processing apparatus 1-2 of embodiment 2 is a modified version of the wafer processing apparatus 1 of embodiment 1, in which the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11 using the multiple openings 12, multiple connecting passages 13, multiple valves 14, suction source 18, and fluid supply source 19 formed in the first holding unit 10, thereby controlling the thickness direction shape of the wafer 100.Instead, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11 using the multiple piezoelectric elements 73, voltage application unit 74, multiple conductive paths 75 (conductors), and multiple switches 76 formed in the first holding unit 10-2, by creating differences in thickness direction positions within the area where the wafer 100 is held on the first holding surface 11, thereby controlling the thickness direction shape of the wafer 100.

[0082] Specifically, the shape control unit 61 switches to a conductive state a switch 76 provided in a conductive path 75 connecting a piezoelectric element 73 formed in an area on the first holding surface 11 corresponding to a desired area of ​​the wafer 100 held by the first holding surface 11, thereby applying a voltage from a voltage application unit 74 to the piezoelectric element 73 via the conductive path 75, causing the piezoelectric element 73 to expand and contract, and changing the position of the first holding surface 11 along the thickness direction of the wafer 100 corresponding to the arrangement position of the piezoelectric element 73, thereby differentiating the position in the thickness direction within the area of ​​the first holding surface 11 that holds the wafer 100. By differentiating the position in the thickness direction within the area of ​​the first holding surface 11 that holds the wafer 100 in this way, the shape control unit 61 can apply an external force to the desired area of ​​the wafer 100 held by the first holding surface 11 in the thickness direction of the wafer 100, thereby deforming the wafer 100 in that direction.

[0083] In addition, the shape control unit 61 controls and adjusts the voltage applied to the piezoelectric element 73 through the conductive path 75 in which the switch 76 is provided, using this switch 76 to control and adjust the magnitude of the difference in thickness direction position within the area where the first holding surface 11 holds the wafer 100, thereby controlling and adjusting the magnitude of the external force applied in the thickness direction of the wafer 100 in the desired area to the wafer 100 held by the first holding surface 11, and controlling and adjusting the deformation in that direction to the desired magnitude.

[0084] The wafer processing method according to the second embodiment is the same as the wafer processing method according to the first embodiment, except that the shape control step 1004 is performed by the shape control unit 61 performing at least one of supplying and suctioning a fluid 402 from the first holding surface 11 using the plurality of openings 12, the plurality of communication paths 13, the plurality of valves 14, the suction source 18, and the fluid supply source 19 formed in the first holding unit 10, thereby applying an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11, and Instead of controlling the thickness-wise shape of wafer 100, a plurality of piezoelectric elements 73, a voltage application section 74, a plurality of conductive paths 75 (conductors), and a plurality of switches 76 formed in first holding section 10-2 are used to create differences in thickness-wise positions within the area of ​​first holding surface 11 that holds wafer 100, thereby applying an external force along the thickness direction of wafer 100 to wafer 100 held by first holding surface 11, thereby controlling the thickness-wise shape of wafer 100.

[0085] The wafer processing method and wafer processing apparatus 1-2 according to the second embodiment having the above-described configuration is the wafer processing method and wafer processing apparatus 1 according to the first embodiment, in which in the shape control step 1004, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11 by the plurality of openings 12, the plurality of communication paths 13, the plurality of valves 14, the suction source 18, and the fluid supply source 19 formed in the first holding surface 10, Instead of controlling the shape of the wafer 100 in the thickness direction, a plurality of piezoelectric elements 73, a voltage application unit 74, a plurality of conductive paths 75 (conductors), and a plurality of switches 76 formed in the first holding unit 10-2 are used to differentiate positions in the thickness direction within the region of the first holding surface 11 that holds the wafer 100, thereby applying an external force along the thickness direction of the wafer 100 to the wafer 100 held by the first holding surface 11, thereby controlling the shape of the wafer 100 in the thickness direction. Therefore, the wafer processing method and wafer processing apparatus 1-2 according to the second embodiment have the same effects as the wafer processing method and wafer processing apparatus 1 according to the first embodiment. Furthermore, the wafer processing method and wafer processing device 1-2 according to embodiment 2 can control the shape of the wafer 100 by applying an external force to the wafer 100, which has higher rigidity than the liquid protective member 301, and can therefore fix the shape of the wafer 100 in a controlled state to the desired shape, thereby more specifically, making it possible to more suitably obtain a wafer 100 in the desired shape than has been possible in the past.

[0086] [Embodiment 3] A wafer processing method and wafer processing apparatus 1-3 according to embodiment 3 of the present invention will be described with reference to the drawings. Fig. 12 is a cross-sectional view showing a first holding unit 10-3 of the wafer processing apparatus 1-3 according to embodiment 3. In Fig. 12, the same parts as those in embodiments 1 and 2 are designated by the same reference numerals, and their description will be omitted.

[0087] As shown in FIG. 12, the wafer processing apparatus 1-3 of embodiment 3 is the wafer processing apparatus 1, 1-2 of embodiments 1, 2, modified to include a first holding unit 10-3 instead of the first holding unit 10, 10-2, and the other configurations are the same as those of embodiments 1, 2.

[0088] 12, the first holding unit 10-3 includes a suction-holding table 81 and an external force application unit 82. The suction-holding table 81 includes, for example, a disk-shaped frame body with a recess formed therein and a disk-shaped suction unit fitted into the recess, the suction unit being formed from a porous ceramic or the like with a large number of porous holes and connected to a suction source (not shown) via a communication path (not shown) formed in the frame body, and the exposed surface (lower surface) facing downward of the suction unit forms a first holding surface 11 that suction-holds the wafer 100 from above by negative pressure introduced from the suction source (not shown) via the communication path (not shown).

[0089] 12, the external force application portion 82 is provided on the outer periphery side of the first holding surface 11 of the first holding unit 10-3, facing the inner periphery side of the first holding surface 11. In the third embodiment, a plurality of external force application portions 82 are provided and arranged at equal intervals along the circumferential direction. In the third embodiment, for example, an air blower is used that applies an external force to the outer periphery side of the wafer 100 suction-held by the first holding surface 11 of the first holding unit 10-3 by blowing air from the outer periphery side of the first holding surface 11 of the first holding unit 10-3 toward the inner periphery side of the first holding surface 11.

[0090] A wafer processing method and wafer processing apparatus 1-3 according to embodiment 3 is a wafer processing method and wafer processing apparatus 1, 1-2 according to embodiments 1 and 2, in which, in shape control step 1004, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held by the first holding surface 11, thereby controlling the shape in the thickness direction of the wafer 100. In the wafer processing method and wafer processing apparatus 1-3 according to embodiment 3, in shape control step 1004, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held by the first holding surface 11, thereby controlling the shape in the thickness direction of the wafer 100 by adjusting and controlling whether or not an external force is applied by the external force application unit 82 and the pressure to be applied.

[0091] The wafer processing method and wafer processing apparatus 1-3 according to the third embodiment having the above-described configuration is the wafer processing method and wafer processing apparatus 1, 1-2 according to the first and second embodiments, except that in the shape control step 1004, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11 by adjusting and controlling whether or not an external force is applied by the external force application unit 82 and the pressure to be applied, thereby controlling the shape in the thickness direction of the wafer 100. Therefore, the wafer processing method and wafer processing apparatus 1-3 according to the third embodiment achieve the same effects as the wafer processing methods and wafer processing apparatuses 1, 1-2 according to the first and second embodiments. Furthermore, the wafer processing method and wafer processing device 1-3 according to embodiment 3 can control the shape of the wafer 100 by applying an external force to the wafer 100, which has higher rigidity than the liquid protective member 301, and can therefore fix the shape of the wafer 100 in a controlled state to the desired shape, thereby more specifically, making it possible to more suitably obtain a wafer 100 in the desired shape than has been possible in the past.

[0092] [Embodiment 4] A wafer processing method and wafer processing apparatus 1-4 according to embodiment 4 of the present invention will be described with reference to the drawings. Fig. 13 is a cross-sectional view showing a first holding unit 10-4 of the wafer processing apparatus 1-4 according to embodiment 4. In Fig. 13, the same parts as those in embodiments 1, 2, and 3 are designated by the same reference numerals, and their description will be omitted.

[0093] As shown in FIG. 13, the wafer processing apparatus 1-4 of embodiment 4 is the wafer processing apparatus 1, 1-2, 1-3 of embodiments 1, 2, 3, modified to include a first holding unit 10-4 instead of the first holding unit 10, 10-2, 10-3, and the other configurations are the same as those of embodiments 1, 2, 3.

[0094] 13, the first holding unit 10-4 includes a disk-shaped frame 91 with a recess formed therein, a disk-shaped suction unit 92 fitted in the recess, and an external force application plate 93. The suction unit 92 of the first holding unit 10-4 is formed from a porous ceramic or the like with a large number of porous holes, and is connected to a suction source 18 similar to that of the first embodiment via a communicating passage 13-4 formed in the frame 91. The downward-facing lower surface of the suction unit 92 of the first holding unit 10-4 suction-holds the external force application plate 93 from above by negative pressure introduced from the suction source 18 via the communicating passage 13-2.

[0095] The external force applying plate 93 is formed in a plate shape, one surface of which is suction-held by the suction unit 92, and the other surface behind the one surface constitutes the first holding surface 11 that suction-holds the wafer 100 from above by negative pressure introduced from the suction source 18 through the communicating passage 13-2 and the communicating passage 13 similar to that in embodiment 1 (not shown) in the external force applying plate 93. Thus, in the first holding unit 10-4, the frame 91 and the suction unit 92 function as an external force applying plate holding unit that holds the external force applying plate 93 constituting the first holding surface 11 from above. Furthermore, the external force applying plate 93 is formed with a plurality of openings 12 and a plurality of communicating passages 13 similar to those in embodiment 1, and is provided with a plurality of valves 14, a suction source 18, and a fluid supply source 19 similar to those in embodiment 1.

[0096] That is, in the wafer processing apparatus 1-4 according to the fourth embodiment, the target in the wafer processing apparatus 1 according to the first embodiment, where the plurality of openings 12 and the plurality of communicating paths 13 are formed and the plurality of valves 14, the suction source 18, and the fluid supply source 19 are provided, is changed to an external force application plate 93. Therefore, in the wafer processing method and wafer processing apparatus 1-4 according to the fourth embodiment, similar to the wafer processing method and wafer processing apparatus 1 according to the first embodiment, in the shape control step 1004, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11 by the plurality of openings 12, the plurality of communicating paths 13, the plurality of valves 14, the suction source 18, and the fluid supply source 19 formed in the first holding unit 10, thereby controlling the shape of the wafer 100 in the thickness direction.

[0097] The wafer processing method and wafer processing apparatus 1-4 of embodiment 4 having the above-described configuration, like the wafer processing method and wafer processing apparatus 1 of embodiment 1, in the shape control step 1004, the shape control unit 61 applies an external force along the thickness direction of the wafer 100 to the wafer 100 held on the first holding surface 11 using the multiple openings 12, multiple connecting passages 13, multiple valves 14, suction source 18 and fluid supply source 19 formed in the first holding portion 10, thereby controlling the shape of the wafer 100 in the thickness direction, thereby achieving the same effects as the wafer processing method and wafer processing apparatus 1 of embodiment 1. Furthermore, the wafer processing method and wafer processing apparatus 1-4 according to embodiment 4 are the same as those according to embodiment 1, except that the target for forming the plurality of openings 12 and the plurality of communicating passages 13 and providing the plurality of valves 14, the suction source 18 and the fluid supply source 19 is changed to the external force application plate 93. Therefore, the effect of easily implementing the method and apparatus is achieved by providing a new external force application plate 93 to a conventional chuck table configured with a frame body 91 and an adsorption portion 92.

[0098] The present invention is not limited to the above-described embodiment, and can be implemented in various modifications without departing from the gist of the present invention. [Explanation of symbols]

[0099] 1, 1-2, 1-3, 1-4 Wafer processing equipment 10,10-2,10-3,10-4 First holding part 11 First holding surface 20 Second holding part 21 Second holding surface 30 Supply section 40 Moving mechanism 50 Hardened part 61 Shape control section 100 wafers 101 Front page 102 Second side 301 Liquid protective materials 401 Negative pressure 402 Fluid 1001 Acquisition Steps 1002 Retention Steps 1003 Protective material supply step 1004 Shape Control Steps 1005 Covering Step 1006 Hardening Step

Claims

1. A method for processing a wafer, comprising: a holding step of holding a first surface of the wafer on a first holding surface of a first holding part; a protective member supplying step of supplying a liquid protective member to at least one of a second surface of the wafer held by the first holding part and a second holding surface of a second holding part facing the first holding part; a covering step of bringing the first holding surface and the second holding surface relatively close to each other and covering the second surface of the wafer with the protective member; a curing step of curing the protective member, A wafer processing method characterized by carrying out a shape control step, before the hardening step, of applying an external force to at least one of the wafer held by the first holding unit and the protective member supplied in the protective member supply step, thereby controlling the shape of at least one of the wafer held by the first holding unit and the protective member.

2. 2. The wafer processing method according to claim 1, wherein the shape control step comprises at least one of supplying and suctioning a fluid from the first holding surface.

3. 2. The wafer processing method according to claim 1, wherein the shape control step comprises at least one of supplying and suctioning a fluid from the second holding surface.

4. 2. The wafer processing method according to claim 1, wherein the shape control step provides a difference in the position in the thickness direction of the wafer within the region of the first holding surface or the second holding surface that holds the wafer.

5. further comprising an acquisition step of acquiring information about the shape of the wafer when the wafer is not held by the first holding unit, 5. The wafer processing method according to claim 1, wherein the shape control step applies an external force in a direction to bring the wafer closer to the shape acquired in the acquisition step.

6. A wafer processing device, a first holding part having a first holding surface that holds a first surface of the wafer; a second holding portion having a second holding surface facing the first holding portion; a supply unit that supplies a liquid protective material to at least one of the second surface of the wafer held by the first holding unit and the second holding surface; a moving mechanism that brings the first holding part and the second holding part relatively close to each other to cover the second surface of the wafer with the protective member; a curing unit that cures the protective member; a shape control unit that applies an external force to the wafer or the protective member along the thickness direction of the wafer to control the shape of the wafer or the protective member in the thickness direction; A wafer processing apparatus comprising:

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