Semiconductor module and manufacturing method of the same

Abstract

To provide a semiconductor module capable of inhibiting water vapor from entering an area below a protection film, and to provide a manufacturing method of the semiconductor module.SOLUTION: A semiconductor module according to an embodiment includes a semiconductor element, an electrode, a protection film, a water-repellent film, and a sealing member. The electrode is provided on the semiconductor element. The electrode has an outer periphery part and a center part. The outer periphery part includes an outer peripheral end. The center part is located at the inner side relative to the outer periphery part in a plan view. The protection film is provided at a side of the outer periphery part and on the outer periphery part. The protection film contains a polyimide resin. The water-repellent film is provided on the protection film. The water-repellent film contains a fluorinated resin. The sealing member is provided on the center part and the water-repellent film. The sealing member includes silicone gel.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a semiconductor module and a method for manufacturing the semiconductor module. [Background technology]

[0002] A semiconductor module is known in which a protective film is provided around the outer periphery of electrodes provided on a semiconductor element, and a sealing member is provided on the electrodes and the protective film. In such a semiconductor module, if silicone gel is used as the sealing member, water vapor that permeates the sealing member can penetrate below the protective film, which can easily cause malfunctions. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 7150183 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a semiconductor module and a method for manufacturing the semiconductor module that can prevent water vapor from penetrating below a protective film. [Means for solving the problem]

[0005] A semiconductor module according to an embodiment includes a semiconductor element, an electrode, a protective film, a water-repellent film, and a sealing member. The electrode is provided on the semiconductor element. The electrode has an outer periphery and a central portion. The outer periphery includes an outer periphery edge. The central portion is located more inward than the outer periphery in a plan view. The protective film is provided on the side of the outer periphery and on the outer periphery. The protective film contains polyimide resin. The water-repellent film is provided on the protective film. The water-repellent film contains a fluorine-substituted resin. The sealing member is provided on the central portion and on the water-repellent film. The sealing member contains silicone gel. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a cross-sectional view schematically illustrating a semiconductor module according to a first embodiment. [Figure 2] 1 is a cross-sectional view schematically illustrating a portion of a semiconductor module according to a first embodiment. [Figure 3] 1 is a cross-sectional view schematically illustrating a portion of a semiconductor module according to a first embodiment. [Figure 4] FIG. 10 is a cross-sectional view schematically illustrating a part of a semiconductor module according to a second embodiment. [Figure 5] FIG. 10 is a cross-sectional view schematically illustrating a part of a semiconductor module according to a third embodiment. [Figure 6] 6(a) to 6(d) are cross-sectional views that schematically show a method for manufacturing the semiconductor module according to the first embodiment. [Figure 7] 7(a) to 7(c) are cross-sectional views that schematically show a method for manufacturing a semiconductor module according to the second embodiment. [Figure 8] 8(a) and 8(b) are cross-sectional views schematically illustrating a method for manufacturing a semiconductor module according to the second embodiment. [Figure 9] 9(a) to 9(c) are cross-sectional views that schematically show a method for manufacturing a semiconductor module according to the third embodiment. [Figure 10]10(a) to 10(c) are cross-sectional views that schematically show a method for manufacturing a semiconductor module according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] <Semiconductor module> (First embodiment) FIG. 1 is a cross-sectional view schematically illustrating a semiconductor module according to a first embodiment. FIG. 2 is a cross-sectional view schematically illustrating a part of the semiconductor module according to the first embodiment. FIG. 3 is a cross-sectional view schematically illustrating a part of the semiconductor module according to the first embodiment. FIG. 2 is an enlarged view of the region R1 shown in FIG. FIG. 3 is an enlarged view of the region R2 shown in FIG. As shown in Figures 1 to 3, the semiconductor module 100 according to the first embodiment includes a semiconductor element 10, an electrode 20, a protective film 30, a water-repellent film 40, a sealing member 50, a base plate 81, a frame 82, a first member 83, a second member 84, a third member 85, and a wire 86.

[0009] In the following description, the direction from the semiconductor element 10 toward the electrode 20 is referred to as "upper," and the direction from the electrode 20 toward the semiconductor element 10 is referred to as "lower." Additionally, the direction perpendicular to the up-down direction is referred to as "lateral."

[0010] The base plate 81 is located at the bottom of the semiconductor module 100. The frame 82 extends upward, surrounding the outer periphery of the metal base 81. A first member 83, a second member 84, and a third member 85 are provided on the base plate 81 within the space surrounded by the frame 82. The first member 83 is provided on the base plate 81 with a first adhesive 83a interposed therebetween. The second member 84 is provided on the first member 83. The third member 85 is provided on the second member 84. The semiconductor element 10 is provided on the third member 85 with a second adhesive 10a interposed therebetween. The base plate 81, the frame 82, the first member 83, the second member 84, and the third member 85 are provided as needed and can be omitted.

[0011] The base plate 81 includes, for example, at least one of aluminum, silicon carbide, and copper. The frame 82 includes, for example, at least one of polyamide and PPS (polyphenylene sulfide). The first member 83 includes, for example, at least one of copper and aluminum. The second member 84 includes, for example, at least one of aluminum nitride, silicon nitride, and aluminum oxide. The third member 85 includes, for example, copper. The first adhesive 83a includes, for example, tin. The second adhesive 10a includes, for example, at least one of lead, tin, and silver.

[0012] The semiconductor element 10 is a so-called power semiconductor element such as an IGBT (insulated gate bipolar transistor) or a MOSFET (metal-oxide-semiconductor field-effect transistor). The semiconductor element 10 includes, for example, silicon carbide and gallium nitride, which have a wider bandgap than silicon.

[0013] An electrode 20 is provided on the semiconductor element 10. The electrode 20 is electrically connected to the semiconductor element 10. The electrode 20 has an outer peripheral portion 20a and a central portion 20b. The outer peripheral portion 20a includes an outer peripheral end 20e of the electrode 20. The central portion 20b is located more inward than the outer peripheral portion 20a in a plan view. The central portion 20b is surrounded by the outer peripheral portion 20a. The central portion 20b includes, for example, the center of the electrode 20. A wire 86 is provided on the central portion 20b. The wire 86 is electrically connected to the electrode 20. The wire 86 is provided as needed and can be omitted.

[0014] The electrode 20 includes, for example, at least one of aluminum and copper. The thickness of the electrode 20 is, for example, not less than 1 μm and not more than 10 μm (for example, about 4 μm).

[0015] In the semiconductor module 100, a termination oxide film 60 is further provided on the semiconductor element 10. The termination oxide film 60 is located to the side of the outer periphery 20a of the electrode 20. A portion of the termination oxide film 60 is located below a portion of the outer periphery 20a of the electrode 20. The termination oxide film 60 is provided as needed and can be omitted.

[0016] The termination oxide film 60 includes, for example, at least one of silicon oxide and silicon nitride. The thickness of the termination oxide film 60 is, for example, 0.1 μm or more and 5 μm or less (for example, about 1.2 μm).

[0017] A protective film 30 is provided on the sides of and on the outer periphery 20a. In the semiconductor module 100, the protective film 30 covers the entire upper surface of the outer periphery 20a. In the semiconductor module 100, the protective film 30 is provided on the outer periphery 20a and on the termination oxide film 60. Furthermore, the protective film 30 is not provided on the central portion 20b. In other words, the protective film 30 covers the outer periphery 20a of the electrode 20, but does not cover the central portion 20b. The protective film 30 protects the outer periphery 20a of the electrode 20.

[0018] The protective film 30 contains a polyimide resin and has a thickness of, for example, 1 μm or more and 10 μm or less (for example, about 5 μm).

[0019] A water-repellent film 40 is provided on the protective film 30. In the semiconductor module 100, the water-repellent film 40 covers the entire upper surface of the protective film 30. It is sufficient that the water-repellent film 40 covers at least a portion of the upper surface of the protective film 30. In other words, the water-repellent film 40 does not have to cover a portion of the upper surface of the protective film 30.

[0020] The water-repellent film 40 includes a fluorine-substituted resin. The fluorine-substituted resin may be a resin in which at least a portion of the hydrogen atoms contained in the resin have been substituted with fluorine atoms, or a resin in which all of the hydrogen atoms have been substituted with fluorine atoms. The fluorine-substituted resin is preferably a resin in which some of the hydrogen atoms contained in the resin have been substituted with fluorine atoms. If some of the hydrogen atoms contained in the resin have been substituted with fluorine atoms, the number of fluorine atoms is not too large compared to, for example, a resin in which all of the hydrogen atoms contained in the resin have been substituted with fluorine atoms, making it easier to achieve both water repellency and adhesion to the protective film 30 and the sealing member 50.

[0021] The water-repellent film 40 includes, for example, at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin. That is, the water-repellent film 40 includes, for example, at least one of a fluorine-substituted polyimide resin, a fluorine-substituted polyimide silicone resin, a fluorine-substituted polyamide-imide resin, and a fluorine-substituted epoxy resin.

[0022] The thickness of the water-repellent film 40 is thinner than the thickness of the protective film 30, for example.

[0023] A sealing member 50 is provided on the central portion 20b and on the water-repellent film 40. In the semiconductor module 100, the sealing member 50 covers, within the space surrounded by the frame 2, the top of the base plate 81, sides of the first adhesive 83a, sides of the first member 83, the top of the second member 84, sides of the second member 84, the top of the third member 85, sides of the third member 85, sides of the second adhesive 10a, the top of the semiconductor element 10, sides of the semiconductor element 10, sides of the termination oxide film 60, sides of the protective film 30, and sides of the water-repellent film 40. In addition, wires 86 are provided inside the sealing member 50. The sealing member 50 seals the semiconductor element 10.

[0024] The sealing member 50 contains silicone gel. The thickness of the sealing member 50 is, for example, not less than 1 mm and not more than 50 mm (for example, about 10 mm).

[0025] The following describes the effects of the semiconductor module 100 according to the first embodiment. In a semiconductor module in which a protective film 30 is provided on the outer periphery 20a of an electrode 20 provided on a semiconductor element 10, if silicone gel is used for the sealing member 50, there is a problem in that water vapor that permeates the sealing member 50 penetrates below the protective film 30, making it prone to malfunction.

[0026] In contrast, in the semiconductor module 100, the water-repellent film 40 is provided on the protective film 30, thereby preventing water vapor that has permeated the sealing member 50 from penetrating below the protective film 30. Furthermore, for example, if silicone gel is used for the sealing member 50, it is difficult to provide a water-repellent film on the surface of the soft sealing member 50, making it difficult to achieve water repellency. In contrast, in the semiconductor module 100, the water-repellent film 40 is provided between the protective film 30 and the sealing member 50, making it easy to achieve water repellency even when silicone gel is used for the sealing member 50. Furthermore, since the water-repellent film 40 contains a fluorine-substituted resin, water repellency is easily achieved. Therefore, the occurrence of failures in the semiconductor module 100 can be reduced.

[0027] (Second embodiment) FIG. 4 is a cross-sectional view schematically illustrating a part of a semiconductor module according to the second embodiment. As shown in FIG. 4, the semiconductor module 200 according to the second embodiment is substantially the same as the semiconductor module 100 according to the first embodiment, except that it further includes an upper resin film 46.

[0028] The upper resin film 46 is provided between the water-repellent film 40 and the sealing member 50. In other words, the upper resin film 46 is provided on the water-repellent film 40. In the semiconductor module 200, the upper resin film 46 covers the entire upper surface of the water-repellent film 40. It is sufficient that the upper resin film 46 covers at least a portion of the upper surface of the water-repellent film 40. In other words, the upper resin film 46 does not have to be provided on a portion of the water-repellent film 40. The upper resin film 46 is provided as needed and can be omitted.

[0029] The upper resin film 46 includes a non-fluorine-substituted resin. The upper resin film 46 includes, for example, at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin. That is, the upper resin film 46 includes, for example, at least one of a non-fluorine-substituted polyimide resin, a non-fluorine-substituted polyimide silicone resin, a non-fluorine-substituted polyamide-imide resin, and an non-fluorine-substituted epoxy resin.

[0030] The semiconductor module 200 can also achieve the same effects as the semiconductor module 100.

[0031] In the semiconductor module 200, the upper resin film 46 is provided between the water-repellent film 40 and the sealing member 50, thereby improving the adhesion between the water-repellent film 40 and the sealing member 50. For example, if the resin contained in the upper resin film 46 is the same as the resin contained in the water-repellent film 40, it is easy to improve the adhesion between the upper resin film 46 and the water-repellent film 40, and it is easy to improve the adhesion between the water-repellent film 40 and the sealing member 50.

[0032] (Third embodiment) FIG. 5 is a cross-sectional view schematically illustrating a part of a semiconductor module according to the third embodiment. As shown in FIG. 5, the semiconductor module 300 according to the third embodiment is substantially the same as the semiconductor module 200 according to the second embodiment, except that a lower resin film 48 is further provided.

[0033] The lower resin film 48 is provided between the protective film 30 and the water-repellent film 40. In other words, the lower resin film 48 is provided below the water-repellent film 40. In the semiconductor module 300, the lower resin film 48 covers the entire upper surface of the protective film 30. It is sufficient that the lower resin film 48 covers at least a portion of the upper surface of the protective film 30. In other words, the lower resin film 48 does not have to be provided on a portion of the protective film 30. In the semiconductor module 300, the water-repellent film 40 covers the entire upper surface of the lower resin film 48. It is sufficient that the water-repellent film 40 covers at least a portion of the upper surface of the lower resin film 48. In other words, the water-repellent film 40 does not have to be provided on a portion of the lower resin film 48. The lower resin film 48 is provided as needed and can be omitted.

[0034] The lower resin film 48 includes a non-fluorine-substituted resin. The lower resin film 48 includes, for example, at least one of a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin. That is, the upper resin film 46 includes, for example, at least one of a non-fluorine-substituted polyimide silicone resin, a non-fluorine-substituted polyamide-imide resin, and an non-fluorine-substituted epoxy resin.

[0035] In the semiconductor module 300, an upper resin film 46 is provided on the water-repellent film 40. The upper resin film 46 is provided as needed and can be omitted.

[0036] The semiconductor module 300 can also achieve the same effects as the semiconductor module 200.

[0037] In the semiconductor module 300, by providing the lower resin film 48 between the protective film 30 and the water-repellent film 40, it is possible to improve the adhesion between the protective film 30 and the water-repellent film 40 when the resin contained in the water-repellent film 40 is different from the resin contained in the protective film 30. For example, if the resin contained in the lower resin film 48 is the same as the resin contained in the water-repellent film 40, it is easy to improve the adhesion between the lower resin film 48 and the water-repellent film 40, and it is easy to improve the adhesion between the protective film 30 and the water-repellent film 40.

[0038] <Semiconductor module manufacturing method> (First embodiment) 6(a) to 6(d) are cross-sectional views that schematically show a method for manufacturing the semiconductor module according to the first embodiment. As shown in Figures 6(a) to 6(d), the method for manufacturing a semiconductor module according to the first embodiment includes a first step, a second step, a third step, and a fourth step. Figure 6(a) shows the first step. Figure 6(b) shows the second step. Figure 6(c) shows the third step. Figure 6(d) shows the fourth step.

[0039] In the first step, as shown in FIG. 6(a), an electrode 20 is provided on a semiconductor element 10. The electrode 20 has an outer peripheral portion 20a and a central portion 20b (see FIG. 2). In the example of FIG. 6(a), a termination oxide film 60 is also provided on the semiconductor element 10. More specifically, first, the termination oxide film 60 is provided on the semiconductor element 10, and then the electrode 20 is provided so that a portion (the outer peripheral portion 20a) overlaps the termination oxide film 60. The termination oxide film 60 is provided as needed and can be omitted.

[0040] In the second step, as shown in FIG. 6(b), a protective film 30 is provided on the sides of the outer peripheral portion 20a of the electrode 20 and on the outer peripheral portion 20a. As described above, the protective film 30 contains a polyimide resin. In the example of FIG. 6(a), the protective film 30 is provided on the outer peripheral portion 20a and on the termination oxide film 60. For example, the protective film 30 can be formed by applying a material containing a polyimide resin to the sides of the outer peripheral portion 20a of the electrode 20 and on the outer peripheral portion 20a.

[0041] 6(c), in the third step, a water-repellent film 40 is provided on the protective film 30. As described above, the water-repellent film 40 contains a fluorine-substituted resin. More specifically, the water-repellent film 40 contains at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin, for example.

[0042] In the third step, for example, plasma treatment is performed on the surface of the protective film 30, thereby substituting fluorine for the surface of the protective film 30 and forming the water-repellent film 40. By performing the plasma treatment, some of the hydrogen atoms contained in the resin on the surface of the protective film 30 are substituted with fluorine atoms. This makes it possible to form the water-repellent film 40 containing fluorine-substituted resin. For example, by changing the conditions of the plasma treatment, it is possible to set the substitution rate of fluorine atoms (i.e., the fluorine content of the water-repellent film 40) to a desired value. This makes it possible to adjust, for example, the water repellency of the water-repellent film 40.

[0043] The plasma treatment may be, for example, atmospheric pressure plasma treatment or vacuum plasma treatment. In the plasma treatment, a gas containing fluorine atoms, such as tetrafluoromethane (CF4), may be used. In the plasma treatment, oxygen may be used together with the gas containing fluorine atoms. In the plasma treatment, an inert gas, such as a rare gas (e.g., helium) or nitrogen, may be used together with the gas containing fluorine atoms.

[0044] By performing plasma treatment on the surface of the protective film 30 to form the water-repellent film 40, it is easier to improve the adhesion between the protective film 30 and the water-repellent film 40 than when, for example, the water-repellent film 40 is formed by applying a material containing a fluorine-substituted resin. Therefore, it is easier to achieve both water repellency and adhesion to the protective film 30.

[0045] 6(d), a sealing member 50 is provided on the central portion 20b of the electrode 20 and on the water-repellent film 40. As described above, the sealing member 50 contains silicone gel. For example, the sealing member 50 can be formed by applying a material containing silicone gel onto the central portion 20b of the electrode 20, the water-repellent film 40, and the semiconductor element 10.

[0046] In this way, the semiconductor module 100 according to the first embodiment can be manufactured through the first step shown in FIG. 6(a), the second step shown in FIG. 6(b), the third step shown in FIG. 6(c), and the fourth step shown in FIG. 6(d).

[0047] (Second embodiment) 7(a) to 7(c), 8(a) and 8(b) are cross-sectional views that schematically show a method for manufacturing a semiconductor module according to the second embodiment. As shown in Figures 7(a) to 7(c), 8(a) and 8(b), the method for manufacturing a semiconductor module according to the second embodiment is substantially the same as the method for manufacturing a semiconductor module according to the first embodiment, except for the third step. Figure 7(a) shows the first step. Figure 7(b) shows the second step. Figures 7(c) and 8(a) show the third step. Figure 8(b) shows the fourth step.

[0048] In the first step, as shown in Fig. 7(a), an electrode 20 is provided on a semiconductor element 10. Fig. 7(a) is substantially the same as Fig. 6(a), and therefore a description thereof will be omitted.

[0049] In the second step, as shown in Fig. 7(b), a protective film 30 is provided on the sides and on the outer periphery 20a of the electrode 20. Fig. 7(b) is substantially the same as Fig. 6(b), and therefore a description thereof will be omitted.

[0050] 7(c), in the third step, first, a water-repellent film 40 is provided on the protective film 30. As described above, in the third step, for example, a plasma treatment is performed on the surface of the protective film 30, thereby replacing the surface of the protective film 30 with fluorine to form the water-repellent film 40.

[0051] In the third step, next, as shown in FIG. 8( a), an upper resin film 46 is formed on the water-repellent film 40. As described above, the upper resin film 46 contains a non-fluorine-substituted resin. More specifically, the upper resin film 46 contains, for example, at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin. For example, the upper resin film 46 can be formed by applying a material containing a non-fluorine-substituted resin onto the water-repellent film 40.

[0052] 8(b), in the fourth step, a sealing member 50 is provided on the central portion 20b of the electrode 20 and on the upper resin film 46. For example, the sealing member 50 can be formed by applying a material containing silicone gel onto the central portion 20b of the electrode 20, the upper resin film 46, and the semiconductor element 10.

[0053] In this way, the semiconductor module 200 according to the second embodiment can be manufactured by the first step shown in FIG. 7(a), the second step shown in FIG. 7(b), the third step shown in FIG. 7(c) and FIG. 8(a), and the fourth step shown in FIG. 8(b).

[0054] (Third embodiment) 9(a) to 9(c) and 10(a) to 10(c) are cross-sectional views that schematically show a method for manufacturing a semiconductor module according to the third embodiment. As shown in Figures 9(a) to 9(c) and 10(a) to 10(c), the method for manufacturing a semiconductor module according to the third embodiment is substantially the same as the method for manufacturing a semiconductor module according to the first embodiment, except for the third step. Figure 9(a) shows the first step. Figure 9(b) shows the second step. Figures 9(c), 10(a), and 10(b) show the third step. Figure 10(c) shows the fourth step.

[0055] In the first step, as shown in Fig. 9(a), an electrode 20 is provided on a semiconductor element 10. Fig. 9(a) is substantially the same as Fig. 6(a), and therefore a description thereof will be omitted.

[0056] In the second step, as shown in Fig. 9(b), a protective film 30 is provided on the sides and on the outer periphery 20a of the electrode 20. Fig. 9(b) is substantially the same as Fig. 6(b), and therefore a description thereof will be omitted.

[0057] In the third step, first, as shown in FIG. 9( c), a lower resin film 48 is formed on the protective film 30. As described above, the lower resin film 48 contains a non-fluorine-substituted resin. More specifically, the lower resin film 48 contains, for example, at least one of a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin. For example, the lower resin film 48 can be formed by applying a material containing a non-fluorine-substituted resin onto the protective film 30.

[0058] In the third step, as shown in FIG. 10( a), a water-repellent film 40 is then provided on the lower resin film 48. In the third step, for example, plasma treatment is performed on the surface of the lower resin film 48 to fluorine-substitute the surface of the lower resin film 48 and form the water-repellent film 40. By performing the plasma treatment, some of the hydrogen atoms contained in the resin on the surface of the lower resin film 48 are substituted with fluorine atoms. This makes it possible to form the water-repellent film 40 containing fluorine-substituted resin. For example, by changing the conditions of the plasma treatment, it is possible to set the substitution rate of fluorine atoms (i.e., the fluorine content of the water-repellent film 40) to a desired value. This makes it possible to adjust, for example, the water repellency of the water-repellent film 40. The plasma treatment on the surface of the lower resin film 48 can be performed in the same manner as the plasma treatment on the surface of the protective film 30 described above.

[0059] By forming the water-repellent film 40 by performing plasma treatment on the surface of the lower resin film 48, it is easier to improve the adhesion between the protective film 30 and the water-repellent film 40 than when, for example, the water-repellent film 40 is formed by applying a material containing a fluorine-substituted resin. Therefore, it is easier to achieve both water repellency and adhesion to the protective film 30.

[0060] In the third step, next, as shown in Fig. 10(b), after forming the water-repellent film 40, an upper resin film 46 is formed on the water-repellent film 40. Fig. 10(b) is substantially the same as Fig. 8(a), and therefore description thereof will be omitted.

[0061] 10(c), in the fourth step, a sealing member 50 is provided on the central portion 20b of the electrode 20, on the upper resin film 46, and on the semiconductor element 10. FIG. 10(c) is substantially the same as FIG. 8(b), and therefore a description thereof will be omitted.

[0062] In this way, the semiconductor module 300 according to the third embodiment can be manufactured by the first step shown in FIG. 9(a), the second step shown in FIG. 9(b), the third step shown in FIG. 9(c), FIG. 10(a), and FIG. 10(b), and the fourth step shown in FIG. 10(c).

[0063] If the upper resin film 46 is omitted, the step shown in FIG. 10(b) may be omitted.

[0064] Embodiments may include the following features.

[0065] (Configuration 1) A semiconductor element; an electrode provided on the semiconductor element, the electrode having an outer periphery including an outer periphery edge and a central portion located inside the outer periphery in a plan view; a protective film including a polyimide resin and provided on the sides of and on the outer periphery of the outer periphery; a water-repellent film containing a fluorine-substituted resin provided on the protective film; a sealing member provided on the central portion and on the water-repellent film, the sealing member including a silicone gel; A semiconductor module comprising:

[0066] (Configuration 2) an upper resin film provided between the water-repellent film and the sealing member; 2. The semiconductor module according to claim 1, wherein the upper resin film includes a resin that is not fluorine-substituted.

[0067] (Configuration 3) a lower resin film provided between the protective film and the water-repellent film, 3. The semiconductor module according to claim 1, wherein the lower resin film contains a resin that is not fluorine-substituted.

[0068] (Configuration 4) 4. The semiconductor module according to any one of configurations 1 to 3, wherein the water-repellent film contains at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin.

[0069] (Configuration 5) 3. The semiconductor module according to configuration 2, wherein the upper resin film contains at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin.

[0070] (Configuration 6) 4. The semiconductor module according to configuration 3, wherein the lower resin film contains at least one of a polyimide silicone resin, a polyamide imide resin, and an epoxy resin.

[0071] (Configuration 7) a first step of providing an electrode on a semiconductor element, the electrode having an outer peripheral portion including an outer peripheral edge and a central portion located inside the outer peripheral portion in a plan view; a second step of providing a protective film containing a polyimide resin on the sides of and on the outer periphery of the outer periphery; a third step of providing a water-repellent film containing a fluorine-substituted resin on the protective film; a fourth step of providing a sealing member containing silicone gel on the central portion and on the water-repellent film; A method for manufacturing a semiconductor module, comprising:

[0072] (Configuration 8) 8. The method for manufacturing a semiconductor module according to claim 7, wherein in the third step, a plasma treatment is performed on the surface of the protective film to replace the surface of the protective film with fluorine, thereby forming the water-repellent film.

[0073] (Configuration 9) A method for manufacturing a semiconductor module according to configuration 7, wherein in the third step, a lower resin film containing a resin that is not fluorine-substituted is formed on the protective film, and a plasma treatment is performed on the surface of the lower resin film, thereby substituting fluorine for the surface of the lower resin film and forming the water-repellent film.

[0074] (Configuration 10) 10. The method for manufacturing a semiconductor module according to any one of configurations 7 to 9, wherein in the third step, after forming the water-repellent film, an upper resin film containing a non-fluorine-substituted resin is formed on the water-repellent film.

[0075] (Configuration 11) 11. The method for manufacturing a semiconductor module according to any one of configurations 7 to 10, wherein the water-repellent film contains at least one of polyimide resin, polyimide silicone resin, polyamide-imide resin, and epoxy resin.

[0076] (Configuration 12) 10. The method for manufacturing a semiconductor module according to claim 9, wherein the lower resin film contains at least one of a polyimide silicone resin, a polyamide imide resin, and an epoxy resin.

[0077] (Configuration 13) 11. The method for manufacturing a semiconductor module according to claim 10, wherein the upper resin film contains at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin.

[0078] As described above, according to the embodiment, it is possible to provide a semiconductor module and a method for manufacturing a semiconductor module that can prevent water vapor from penetrating below the protective film.

[0079] While the present invention has been described above by way of example, it is not intended to limit the scope of the present invention. This novel embodiment may be embodied in various other forms, and various omissions, substitutions, modifications, etc. may be made without departing from the spirit of the invention. This embodiment and its modifications are intended to be included within the scope and spirit of the invention, as well as within the scope of the claims and their equivalents. [Explanation of symbols]

[0080] 10: Semiconductor element 10a: Second adhesive 20: Electrode 20a: Outer periphery 20b: Central part 20e: Outer edge 30:Protective film 40: Water-repellent film 46: Upper resin film 48: Lower resin film 50: Sealing member 60: Termination oxide film 81: Base plate 82: Frame 83: First member 83a: First adhesive 84: Second member 85: Third member 86: Wire 100, 200, 300: Semiconductor modules

Claims

1. A semiconductor element; an electrode provided on the semiconductor element, the electrode having an outer periphery including an outer periphery edge and a central portion located inside the outer periphery in a plan view; a protective film including a polyimide resin and provided on the sides of and on the outer periphery of the outer periphery; a water-repellent film containing a fluorine-substituted resin provided on the protective film; a sealing member provided on the central portion and on the water-repellent film, the sealing member including a silicone gel; A semiconductor module comprising:

2. an upper resin film provided between the water-repellent film and the sealing member; The semiconductor module according to claim 1 , wherein the upper resin film contains a resin that is not fluorine-substituted.

3. a lower resin film provided between the protective film and the water-repellent film, The semiconductor module according to claim 1 , wherein the lower resin film contains a resin that is not fluorine-substituted.

4. 2. The semiconductor module according to claim 1, wherein the water-repellent film contains at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin.

5. 3. The semiconductor module according to claim 2, wherein the upper resin film includes at least one of a polyimide resin, a polyimide silicone resin, a polyamide-imide resin, and an epoxy resin.

6. 4. The semiconductor module according to claim 3, wherein the lower resin film includes at least one of a polyimide silicone resin, a polyamide imide resin, and an epoxy resin.

7. a first step of providing an electrode on a semiconductor element, the electrode having an outer periphery including an outer periphery edge and a central portion located inside the outer periphery in a plan view; a second step of providing a protective film containing a polyimide resin on the sides of and on the outer periphery of the outer periphery; a third step of providing a water-repellent film containing a fluorine-substituted resin on the protective film; a fourth step of providing a sealing member containing silicone gel on the central portion and on the water-repellent film; A method for manufacturing a semiconductor module, comprising:

8. 8. The method for manufacturing a semiconductor module according to claim 7, wherein in the third step, the surface of the protective film is subjected to a plasma treatment to substitute fluorine for the surface of the protective film, thereby forming the water-repellent film.

9. 8. The method for manufacturing a semiconductor module according to claim 7, wherein in the third step, a lower resin film containing a resin that is not fluorine-substituted is formed on the protective film, and a plasma treatment is performed on a surface of the lower resin film, thereby substituting fluorine for the surface of the lower resin film and forming the water-repellent film.

10. 8. The method for manufacturing a semiconductor module according to claim 7, wherein in the third step, after forming the water-repellent film, an upper resin film containing a non-fluorine-substituted resin is formed on the water-repellent film.

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