Adhesive composition, laminate, and producing method of processed semiconductor substrate

Abstract

To provide an adhesive composition or the like that makes it easy to wash a semiconductor substrate or an electronic device layer, in peeling with infrared laser.SOLUTION: An adhesive composition for forming an adhesive layer to be used for separating a first substrate, which is a semiconductor substrate or an electronic device layer, and a second substrate, which is a support substrate that transmits infrared laser, in a laminate comprising the first substrate, the second substrate, and an adhesive layer provided between the first substrate and the second substrate, after processing the first substrate, wherein the infrared laser is irradiated from the second substrate side onto the adhesive layer, the adhesive composition comprising a first component that transmits infrared and a second component that absorbs infrared, wherein in the adhesive layer, the first component or its cured product is more present on the second substrate side than on the first substrate side, and the second component or its cured product is more present on the first substrate side than on the second substrate side.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to adhesive compositions, laminates, and methods for producing processed semiconductor substrates. [Background technology]

[0002] Semiconductor wafers have traditionally been integrated in a two-dimensional plane, but for the purpose of even greater integration, there is a demand for semiconductor integration technology that integrates (stacks) the plane in a three-dimensional direction. This three-dimensional stacking is a technology that integrates multiple layers while connecting them using through silicon vias (TSVs). When integrating multiple layers, each wafer to be integrated is thinned by polishing the side opposite the circuit surface (i.e., the backside), and the thinned semiconductor wafers are stacked.

[0003] Semiconductor wafers (herein simply referred to as wafers) before thinning are bonded to a support in preparation for polishing with a polishing device. This bond must be easily peeled off after polishing, and is therefore called a temporary bond. This temporary bond must be easily removed from the support; applying a large force to remove it can cause the thinned semiconductor wafer to break or deform, so it must be easily removed to prevent this from happening. However, it is undesirable for the temporary bond to become dislodged or shifted due to the polishing stress during polishing of the backside of the semiconductor wafer. Therefore, the performance required of the temporary bond is that it can withstand the stress during polishing and be easily removed after polishing.

[0004] As temporary adhesives used for such temporary bonding, adhesives containing polydimethylsiloxane (Patent Document 1) and temporary adhesives containing epoxy-modified polysiloxane (Patent Document 2) have been proposed. In these techniques, the support and the semiconductor wafer are separated by inserting the sharp part of a device with a sharp part called a debonder into the layer of temporary adhesive.

[0005] On the other hand, it has been proposed to use infrared rays to separate a support from a semiconductor wafer. For example, an infrared-peelable adhesive composition that can be peeled off by infrared irradiation has been proposed, which contains a component (A) that cures by a hydrosilylation reaction and at least one component (B) selected from the group consisting of a component containing an epoxy-modified polyorganosiloxane, a component containing a methyl group-containing polyorganosiloxane, and a component containing a phenyl group-containing polyorganosiloxane (Patent Document 3). Furthermore, a method for peeling a laminate has been proposed, which includes a first step in which a first substrate made of a semiconductor forming substrate and a second substrate made of a support substrate that is transparent to infrared laser light are bonded to each other via a first adhesive layer provided on the first substrate side and a second adhesive layer provided on the second substrate side to form a laminate, the first adhesive layer being an adhesive layer obtained by curing an adhesive (A) containing a component that hardens by a hydrosilylation reaction, and the second adhesive layer being an adhesive layer that is transparent to the infrared laser and is obtained using an adhesive (B) that is a polymer adhesive having an aromatic ring in at least one of the main chain and the side chain; and a second step in which the infrared laser is irradiated from the second substrate side of the laminate to peel the first adhesive layer from the second adhesive layer to separate the first adhesive layer from the second adhesive layer (Patent Document 4). In infrared peeling, the adhesive is altered by irradiation with infrared light, making peeling easier. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2017 / 221772 Brochure [Patent Document 2] International Publication No. 2018 / 216732 Brochure [Patent Document 3] International Publication No. 2020 / 100966 Brochure [Patent Document 4] International Publication No. 2020 / 100965 Brochure Summary of the Invention [Problem to be solved by the invention]

[0007] The techniques described in Patent Documents 1 and 2 require a certain degree of insertion force when using equipment with sharp edges for peeling, which can result in problems such as long processing times and damage to the semiconductor wafer or supporting substrate. In the techniques described in Patent Documents 3 and 4, sufficient irradiation with an infrared laser is required to facilitate peeling, but in this case, problems may arise such as the processing time being long and deterioration of the adhesive, which reduces its cleanability.

[0008] An object of the present invention is to provide an adhesive composition that facilitates cleaning of a semiconductor substrate or electronic device layer during peeling using an infrared laser, a laminate using the adhesive composition, and a method for producing a processed semiconductor substrate or electronic device layer using the laminate. [Means for solving the problem]

[0009] The present inventors have conducted extensive research to solve the above problems, and as a result have found that the above problems can be solved, and have completed the present invention having the following gist.

[0010] That is, the present invention includes the following. [1] An adhesive composition for forming an adhesive layer used to separate the first substrate from the second substrate, the adhesive layer being formed in a laminate having a first substrate which is a semiconductor substrate or an electronic device layer, a second substrate which is a support substrate that transmits an infrared laser, and an adhesive layer provided between the first substrate and the second substrate, the adhesive layer being irradiated with the infrared laser from the second substrate side after processing the first substrate, It contains a first component that transmits infrared rays and a second component that absorbs infrared rays, In the adhesive layer, the first component or a cured product thereof is present in a larger amount on the second substrate side than on the first substrate side, and the second component or a cured product thereof is present in a larger amount on the first substrate side than on the second substrate side. Adhesive composition. [2] The adhesive composition according to [1], wherein the second component contains an infrared absorber. [3] The adhesive composition according to [1] or [2], wherein the insertion force required to insert the sharp portion of a substrate having a sharp portion between the first substrate and the second substrate and separate the first substrate and the second substrate after irradiating the adhesive layer with the infrared laser is smaller than the insertion force required to insert the sharp portion between the first substrate and the second substrate and separate the first substrate and the second substrate without irradiating the adhesive layer with the infrared laser. [4] A first substrate which is a semiconductor substrate or an electronic device layer; a second substrate that is a support substrate that transmits an infrared laser; an adhesive layer provided between the first substrate and the second substrate; The adhesive layer is an adhesive layer formed from the adhesive composition according to any one of [1] to [3]. [5] A processing step in which the first substrate of the laminate according to [4] is processed; a separation step of irradiating the adhesive layer with the infrared laser from the second substrate side, and then separating the processed first substrate and the second substrate; 1. A method for producing a processed semiconductor substrate or electronic device layer, comprising: [6] The method for manufacturing a processed semiconductor substrate or electronic device layer described in [5], wherein by irradiating the adhesive layer with the infrared laser, the insertion force required to insert the sharp portion of a substrate having a sharp portion between the first substrate and the second substrate to separate the first substrate and the second substrate is reduced compared to when the infrared laser is not irradiated to the adhesive layer. [Effects of the Invention]

[0011] According to the present invention, it is possible to provide an adhesive composition that facilitates cleaning of a semiconductor substrate or an electronic device layer in peeling using an infrared laser, a laminate using the adhesive composition, and a method for producing a processed semiconductor substrate or an electronic device layer using the laminate. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a schematic cross-sectional view of an example of a laminate according to the first embodiment. [Figure 2A] FIG. 2A is a schematic cross-sectional view (part 1) illustrating a method for producing a laminate showing one example of the first embodiment. [Figure 2B] FIG. 2B is a schematic cross-sectional view (part 2) illustrating a method for producing a laminate showing an example of the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view of an example of the laminate according to the second embodiment. [Figure 4A] FIG. 4A is a schematic cross-sectional view (part 1) illustrating a method for producing a laminate showing one example of the second embodiment. [Figure 4B] FIG. 4B is a schematic cross-sectional view (part 2) illustrating a method for producing a laminate showing an example of the second embodiment. [Figure 4C] FIG. 4C is a schematic cross-sectional view (part 3) illustrating a method for producing a laminate showing an example of the second embodiment. [Figure 5A] FIG. 5A is a schematic cross-sectional view (part 1) illustrating a method for processing a laminate showing an example of the first embodiment. [Figure 5B] FIG. 5B is a schematic cross-sectional view (part 2) illustrating a method for processing a laminate showing an example of the first embodiment. [Figure 5C] FIG. 5C is a schematic cross-sectional view (part 3) illustrating a method for processing a laminate showing an example of the first embodiment. [Figure 5D] FIG. 5D is a schematic cross-sectional view (part 4) illustrating a method for processing a laminate showing an example of the first embodiment. [Figure 5E] FIG. 5E is a schematic cross-sectional view (part 5) illustrating a method for processing a laminate showing an example of the first embodiment. [Figure 6A] FIG. 6A is a schematic cross-sectional view (part 1) illustrating a method for processing a laminate showing one example of the second embodiment. [Figure 6B] FIG. 6B is a schematic cross-sectional view (part 2) illustrating a method for processing a laminate showing an example of the second embodiment. [Figure 6C] FIG. 6C is a schematic cross-sectional view (part 3) illustrating a method for processing a laminate showing an example of the second embodiment. [Figure 6D] FIG. 6D is a schematic cross-sectional view (part 4) illustrating a method for processing a laminate showing an example of the second embodiment. [Figure 6E] FIG. 6E is a schematic cross-sectional view (part 5) illustrating a method for processing a laminate showing an example of the second embodiment. [Figure 6F] FIG. 6F is a schematic cross-sectional view (part 6) illustrating a method for processing a laminate showing an example of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0013] (Adhesive composition) The adhesive composition of the present invention is an adhesive composition for forming an adhesive layer. The adhesive layer is used by processing the first substrate in the laminate, irradiating the adhesive layer with an infrared laser from the second substrate side, and then separating the first substrate and the second substrate. The laminate has a first substrate, a second substrate, and an adhesive layer. The first substrate is a semiconductor substrate or an electronic device layer. The second substrate is a support substrate that is transparent to the infrared laser. The adhesive layer is disposed between the first substrate and the second substrate. The adhesive composition contains a first component that transmits infrared radiation and a second component that absorbs infrared radiation. In the adhesive layer, the first component or its cured product is present in greater amounts on the second substrate side than on the first substrate side, and the second component or its cured product is present in greater amounts on the first substrate side than on the second substrate side. Hereinafter, this state of existence may be referred to as a "specific state of existence in the adhesive layer."

[0014] In the present invention, when the adhesive layer is irradiated with an infrared laser, the second component or its cured product absorbs the infrared light, causing deterioration or decomposition. Adhesive strength decreases in areas where the second component or its cured product is present in large amounts. In the adhesive layer, the first component or its cured product is present in greater amounts on the second substrate side than on the first substrate side, and the second component or its cured product is present in greater amounts on the first substrate side than on the second substrate side. Therefore, when the first and second substrates are separated, the adhesive layer can be peeled off without remaining on the first substrate, which is the semiconductor substrate or electronic device layer. As a result, the burden of cleaning the first substrate is reduced.

[0015] In the present invention, it is preferable that the insertion force (Fb) required when inserting the sharp portion of a substrate having a sharp portion between the first substrate and the second substrate to separate the first substrate and the second substrate after irradiating the adhesive layer with an infrared laser is smaller than the insertion force (Fa) required when inserting the sharp portion between the first substrate and the second substrate without irradiating the adhesive layer with an infrared laser. The insertion force (Fa) is, for example, 0.1N to 100N.

[0016] The ratio (Fb / Fa) of the insertion force (Fa) to the insertion force (Fb) is not particularly limited, but is preferably less than 1.0, more preferably 0.9 or less, and even more preferably 0.6 or less. The lower limit of the ratio (Fb / Fa) is not particularly limited, but the ratio (Fb / Fa) may be 0.01 or more, 0.05 or more, or 0.1 or more. The insertion force is measured, for example, as follows. After the semiconductor substrate or electronic device layer and the support substrate are temporarily bonded via an adhesive layer to obtain a laminate, peeling is performed using a peeling device. For peeling, a scraper blade (manufactured by Esco Corporation; blade thickness: 0.2 mm) is attached to the tip of a Newton meter, and the blade is inserted parallel to the substrate into the adhesive layer bonding the semiconductor substrate or electronic device layer and the support substrate, creating a peel trigger. The minimum force required to insert the blade is measured with the Newton meter and used as the insertion force. The insertion force can be measured using, for example, a Newton meter or a texture analyzer.

[0017] <First component> The first component is a component that transmits infrared rays. Examples of such components include, but are not limited to, non-silicone polymers. The non-silicone polymer refers to a polymer that does not have a siloxane bond. Examples of non-silicone polymers include polymers having an aromatic ring in at least one of the main chain and the side chain, such as polycarbonate and polystyrene.

[0018] The content of the adhesive component in the adhesive composition is not particularly limited, but from the viewpoint of suitably obtaining the effects of the present invention, it is preferably 30% by mass or more, more preferably 50% by mass or more, and particularly preferably 70% by mass or more, based on the non-volatile content of the adhesive composition. The upper limit is not particularly limited, but is, for example, preferably 95% by mass or less, more preferably 90% by mass or less, and particularly preferably 85% by mass or less. The non-volatile content of the adhesive composition refers to the components other than the solvent in the adhesive composition.

[0019] <Second component> The second component is a component that absorbs infrared rays, such as an infrared absorbing agent.

[0020] <<Infrared absorber>> The infrared absorbing agent is not particularly limited as long as it absorbs infrared rays, and may be an inorganic material or an organic material.

[0021] The infrared absorber has a function of, for example, being excited by infrared rays and transferring electrons and / or energy to other components, and also has a function of converting the absorbed infrared rays into heat. The infrared absorber preferably has a maximum absorption in the wavelength range of 750 to 1,400 nm.

[0022] Examples of infrared absorbers include dyes, pigments, and polyorganosiloxanes, whose siloxane bonds absorb infrared rays.

[0023] <<<Dyes and pigments>>> As the dye, commercially available dyes and known dyes described in literature such as "Dye Handbook" (edited by the Organic Synthetic Chemistry Association, published in 1970) can be used. Specific examples include azo dyes, metal complex azo dyes, pyrazolone azo dyes, naphthoquinone dyes, anthraquinone dyes, phthalocyanine dyes, carbonium dyes, quinoneimine dyes, methine dyes, cyanine dyes, squarylium dyes, pyrylium salts, and metal thiolate complex dyes. Of the dyes, cyanine dyes, squarylium dyes, and pyrylium salts are preferred, cyanine dyes are more preferred, and indolenine cyanine dyes are particularly preferred.

[0024] Specific examples of cyanine dyes include the compounds described in paragraphs 0017 to 0019 of JP-A No. 2001-133969, the compounds described in paragraphs 0016 to 0021 of JP-A No. 2002-023360, and the compounds described in paragraphs 0012 to 0037 of JP-A No. 2002-040638, preferably the compounds described in paragraphs 0034 to 0041 of JP-A No. 2002-278057, and paragraphs 0080 to 0086 of JP-A No. 2008-195018, and particularly preferably the compounds described in paragraphs 0035 to 0043 of JP-A No. 2007-90850. In addition, the compounds described in paragraphs 0008 to 0009 of JP-A No. 5-5005 and paragraphs 0022 to 0025 of JP-A No. 2001-222101 can also be preferably used. As the pigment, the compounds described in paragraphs 0072 to 0076 of JP-A No. 2008-195018 are preferred.

[0025] <<<Polyorganosiloxane>>> Polyorganosiloxane absorbs infrared rays and also imparts releasability to the adhesive layer. Therefore, polyorganosiloxane is both a component that absorbs infrared rays and a release agent component.

[0026] Polyorganosiloxanes usually contain siloxane units (D units), but may also contain Q units, M units, and T units. For example, they may consist of only D units, a combination of D units and Q units, a combination of D units and M units, a combination of D units and T units, a combination of D units, Q units, and M units, a combination of D units, M units, and T units, or a combination of D units, Q units, M units, and T units.

[0027] The polyorganosiloxane is not particularly limited, and examples thereof include polydimethylsiloxane, epoxy group-containing polyorganosiloxane, phenyl group-containing polyorganosiloxane, and carbinol-modified polyorganosiloxane.

[0028] -Polydimethylsiloxane- The "polydimethylsiloxane" in the present invention is an unmodified polyorganosiloxane, unlike epoxy group-containing polydimethylsiloxane, phenyl group-containing polydimethylsiloxane, carbinol-modified polyorganosiloxane, etc., and has a methyl group as an organic group bonded to a silicon atom. It is a polyorganosiloxane.

[0029] Specific examples of polydimethylsiloxane include, but are not limited to, those represented by formula (M1).

[0030] [ka] (n4 represents the number of repeating units and is a positive integer.)

[0031] The weight-average molecular weight of polydimethylsiloxane is not particularly limited, but is usually 100,000 to 2,000,000, preferably 200,000 to 1,200,000, and more preferably 300,000 to 900,000.The degree of dispersion is also not particularly limited, but is usually 1.0 to 10.0, and from the viewpoint of achieving suitable release with good reproducibility, is preferably 1.5 to 5.0, and more preferably 2.0 to 3.0. The viscosity of the polydimethylsiloxane is not particularly limited, but is usually 1,000 to 2,000,000 mm 2 The viscosity value of polydimethylsiloxane is expressed as kinematic viscosity, and is expressed in centistokes (cSt) = mm 2 / s. Viscosity (mPa s) is converted to density (g / cm 3 ) can be calculated by dividing the viscosity and density measured with an E-type rotational viscometer at 25°C. 2 / s)=viscosity (mPa s) / density (g / cm 3 ) can be calculated from the formula:

[0032] -Epoxy group-containing polyorganosiloxane- Examples of epoxy group-containing polyorganosiloxanes include R 11 R 12 SiO 2 / 2 The siloxane unit (D 10 Examples include those containing units.

[0033] R 11 is a group bonded to a silicon atom and represents an alkyl group, and R 12 is a group bonded to a silicon atom and represents an epoxy group or an organic group containing an epoxy group. The epoxy group in the epoxy group-containing organic group may be an independent epoxy group that is not condensed with other rings, or may be an epoxy group that forms a condensed ring with other rings, such as a 1,2-epoxycyclohexyl group. Specific examples of organic groups containing an epoxy group include, but are not limited to, 3-glycidoxypropyl and 2-(3,4-epoxycyclohexyl)ethyl. In the present invention, a preferred example of the epoxy group-containing polyorganosiloxane is epoxy group-containing polydimethylsiloxane, but is not limited thereto.

[0034] The epoxy group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 10 units), but D 10 In addition to units, Q units, M units and / or T units may be included. In a preferred embodiment of the present invention, specific examples of the epoxy group-containing polyorganosiloxane include D 10 Polyorganosiloxane consisting of only units, D 10 polyorganosiloxanes containing D units and Q units; 10 Polyorganosiloxanes containing D units and M units, 10 Polyorganosiloxanes containing D units and T units, 10 polyorganosiloxanes containing units, Q units and M units, D 10 Polyorganosiloxanes containing units, M units and T units, D 10 Examples of suitable organosiloxanes include polyorganosiloxanes containing Q units, M units, and T units.

[0035] The epoxy group-containing polyorganosiloxane may have an epoxy group on a side chain, may have an epoxy group at one end, or may have epoxy groups at both ends.

[0036] The epoxy group-containing polyorganosiloxane is preferably an epoxy group-containing polydimethylsiloxane having an epoxy value of 0.1 to 5. The weight average molecular weight thereof is not particularly limited, but is usually 1,500 to 500,000, and from the viewpoint of suppressing precipitation in the composition, it is preferably 100,000 or less.

[0037] Specific examples of epoxy group-containing polyorganosiloxanes include, but are not limited to, those represented by formulas (E1) to (E3).

[0038] [ka] (m1 and n1 represent the number of each repeating unit and are positive integers.)

[0039] [ka] (m2 and n2 represent the number of repeating units and are positive integers, and R represents an alkylene group having 1 to 10 carbon atoms which may be interrupted by at least one of an oxygen atom and an unsaturated bond (e.g., a carbon-carbon double bond, a carbon-carbon triple bond, or -N=N-).)

[0040] [ka] (m3, n3, and o3 each represent the number of repeating units and are positive integers, and R represents an alkylene group having 1 to 10 carbon atoms which may be interrupted by at least one of an oxygen atom and an unsaturated bond (e.g., a carbon-carbon double bond, a carbon-carbon triple bond, or -N=N-).)

[0041] In the above general formula, when m1, m2, m3, and O3 are 2 or more, the repeating units thereof may be arranged adjacent to each other to form a block, or may be arranged randomly.

[0042] Since the polyorganosiloxane represented by formula (E3) has an epoxy group and a phenyl group, it is an epoxy group-containing polyorganosiloxane and also a phenyl group-containing polyorganosiloxane. The epoxy group-containing polyorganosiloxane may or may not have a phenyl group.

[0043] The weight-average molecular weight of the epoxy group-containing polyorganosiloxane is not particularly limited, but is usually 100,000 to 2,000,000, preferably 200,000 to 1,200,000, and more preferably 300,000 to 900,000.The degree of dispersion is also not particularly limited, but is usually 1.0 to 10.0, and from the viewpoint of achieving suitable release with good reproducibility, is preferably 1.5 to 5.0, and more preferably 2.0 to 3.0. The viscosity of the epoxy group-containing polyorganosiloxane is not particularly limited, but is usually 1,000 to 2,000,000 mm 2 The viscosity value of the epoxy group-containing polyorganosiloxane is expressed as a kinematic viscosity, and is expressed as centistokes (cSt) = mm 2 / s. Viscosity (mPa s) is converted to density (g / cm 3 ) can be calculated by dividing the viscosity and density measured with an E-type rotational viscometer at 25°C. 2 / s)=viscosity (mPa s) / density (g / cm 3 ) can be calculated from the formula:

[0044] -Phenyl group-containing polyorganosiloxane- Examples of the phenyl group-containing polyorganosiloxane include R 31 R 32 SiO 2 / 2 The siloxane unit (D 30 Examples include those containing units.

[0045] R 31 is a group bonded to a silicon atom and represents a phenyl group or an alkyl group; R 32 is a group bonded to a silicon atom and represents a phenyl group.

[0046] The phenyl group-containing polyorganosiloxane contains the above-mentioned siloxane unit (D 30 units), but D 30 In addition to units, Q units, M units and / or T units may be included.

[0047] In a preferred embodiment, specific examples of the phenyl group-containing polyorganosiloxane include D 30 Polyorganosiloxane consisting of only units, D 30 polyorganosiloxanes containing D units and Q units; 30 Polyorganosiloxanes containing D units and M units, 30 Polyorganosiloxanes containing D units and T units, 30 polyorganosiloxanes containing units, Q units and M units, D 30 Polyorganosiloxanes containing units, M units and T units, D 30 Examples of suitable polyorganosiloxanes include polyorganosiloxanes containing Q, M, and T units.

[0048] Specific examples of the phenyl group-containing polyorganosiloxane include, but are not limited to, those represented by formula (P1) or (P2).

[0049] [ka] (m5 and n5 each represent the number of repeating units and are positive integers.)

[0050] [ka] (m6 and n6 represent the number of each repeating unit and are positive integers.)

[0051] In the above general formula, when m5 and m6 are 2 or more, the repeating units may be arranged adjacent to each other to form a block, or may be arranged randomly.

[0052] -Carbinol-modified polyorganosiloxane- The carbinol-modified polyorganosiloxane is not particularly limited. Carbinol-modified polyorganosiloxanes are polyorganosiloxanes having hydroxy groups directly bonded to carbon atoms. Thus, the carbinol in "carbinol-modified polyorganosiloxanes" is not limited to methanol in the narrow sense, but also includes methanol derivatives.

[0053] The carbinol-modified polyorganosiloxane is, for example, a carbinol-modified polydimethylsiloxane.

[0054] The number of hydroxy groups directly bonded to carbon atoms in the carbinol-modified polyorganosiloxane is not particularly limited, and may be one or two or more.

[0055] The carbinol-modified polyorganosiloxane may have a hydroxy group bonded directly to a carbon atom in a side chain, may have a hydroxy group bonded directly to a carbon atom at one end, or may have hydroxy groups bonded directly to carbon atoms at both ends. The carbinol-modified polyorganosiloxane preferably has a hydroxy group directly bonded to a carbon atom in the side chain. In this case, even if the content of the carbinol-modified polyorganosiloxane is small, the adhesive layer formed from the adhesive composition can be imparted with good releasability.

[0056] The carbinol-modified polyorganosiloxane has, for example, a group represented by the following formula (Cg) as a group directly bonded to a silicon atom.

[0057] [ka] (In formula (Cg), R 1 represents a group having one or more carbon atoms. * represents a bond bonded to a silicon atom. However, the hydroxy group in formula (Cg) is directly bonded to a carbon atom.

[0058] The number of hydroxy groups directly bonded to a carbon atom in the group represented by formula (Cg) may be 1 or 2 or more. Examples of 2 or more include 2, 3, and 4.

[0059] R 1 The number of carbon atoms is not particularly limited, and may be, for example, 1 to 30, 1 to 20, or 1 to 10.

[0060] Examples of the group represented by formula (Cg) include groups represented by the following formulae (Cg-1) to (Cg-4). [ka] (In formula (Cg-1), R 11 represents an alkylene group having 1 to 6 carbon atoms which may be substituted with an alkoxy group having 1 to 3 carbon atoms. In formula (Cg-2), R 12 represents an alkylene group having 1 to 6 carbon atoms. 13 represents an alkylene group having 1 to 6 carbon atoms which may be substituted with an alkoxy group having 1 to 3 carbon atoms or a hydroxy group. In formula (Cg-3), R 14 represents an alkylene group having 1 to 6 carbon atoms. 15 represents an alkylene group having 1 to 3 carbon atoms, and m represents an integer of 1 to 10. In formula (Cg-4), R 16 ~R 18 each independently represents an alkylene group having 1 to 6 carbon atoms. In formulae (Cg-1) to (Cg-4), * represents a bond bonded to a silicon atom.

[0061] R 11 ~R 18 The alkylene group may be linear, branched, or cyclic.

[0062] Examples of the group represented by formula (Cg) include the following groups. [ka] (In the formula, m1 represents an integer of 2 to 10, and * represents a bond bonded to a silicon atom.)

[0063] The carbinol-modified polyorganosiloxane is represented, for example, by the following formula (CPS-1) or formula (CPS-2). [ka] (In formula (CPS-1), R 51 Each of X independently represents a hydrocarbon group. 1 represents a group represented by the above formula (Cg), n1 represents an integer of 0 or more, and n2 represents an integer of 1 or more. In formula (CPS-2), R 52 Each of X independently represents a hydrocarbon group. 2 represents a group represented by the above formula (Cg). 3 represents a hydrocarbon group or a group represented by the above formula (Cg). n3 represents an integer of 0 or more.

[0064] R 51 , R 52 , and X 3 In the formula (CPS-1a), examples of the hydrocarbon group include alkyl groups having 1 to 8 carbon atoms. As the alkyl group having 1 to 8 carbon atoms, a methyl group is preferred. That is, the carbinol-modified polyorganosiloxane is preferably a polydimethylsiloxane represented by the following formula (CPS-1a) or formula (CPS-2a): [ka] (In formula (CPS-1a), X 1 represents a group represented by the above formula (Cg), n1 represents an integer of 0 or more, and n2 represents an integer of 1 or more. In formula (CPS-2a), X 2 represents a group represented by the above formula (Cg). 3 represents a methyl group or a group represented by the above formula (Cg). n3 represents an integer of 0 or more.

[0065] The carbinol-modified polyorganosiloxane represented by formula (CPS-1) and the carbinol-modified polydimethylsiloxane represented by formula (CPS-1a) have a hydroxy group directly bonded to a carbon atom in the side chain. The carbinol-modified polyorganosiloxane represented by formula (CPS-2) and the carbinol-modified polydimethylsiloxane represented by formula (CPS-2a) have hydroxy groups directly bonded to carbon atoms at one or both ends.

[0066] In the carbinol-modified polyorganosiloxane represented by formula (CPS-1), when n2 is 2 or more, -Si(R 51 )(X 1 The siloxane units represented by —O— may be arranged adjacent to each other to form a block, or may be arranged randomly. In the carbinol-modified polydimethylsiloxane represented by formula (CPS-1a), when n2 is 2 or more, -Si(CH3)(X 1 The siloxane units represented by —O— may be arranged adjacent to each other to form a block, or may be arranged randomly.

[0067] The weight-average molecular weight of the carbinol-modified polyorganosiloxane is not particularly limited, but is usually 500 to 1,000,000, and preferably 5,000 to 50,000. The dispersity is also not particularly limited, but is usually 1.0 to 10.0, and from the viewpoint of achieving suitable release with good reproducibility, it is preferably 1.5 to 5.0, and more preferably 2.0 to 3.0. The viscosity of the carbinol-modified polyorganosiloxane is not particularly limited, but is usually 100 to 200,000 mm 2 The viscosity value of polydimethylsiloxane is expressed as kinematic viscosity, and is expressed in centistokes (cSt) = mm 2 / s. Viscosity (mPa s) is converted to density (g / cm 3 ) can be calculated by dividing the viscosity and density measured with an E-type rotational viscometer at 25°C.2 / s)=viscosity (mPa s) / density (g / cm 3 ) can be calculated from the formula:

[0068] The polyorganosiloxane can be used alone or in combination of two or more. Here, the two types in the two or more types of polyorganosiloxanes refer to, for example, a combination of polydimethylsiloxane and epoxy group-containing polyorganosiloxane, or a combination of polydimethylsiloxane and phenyl group-containing polyorganosiloxane, but does not refer to a combination of two epoxy group-containing polyorganosiloxanes that are different in molecular weight, viscosity, type of epoxy group, etc.

[0069] The polyorganosiloxane may be a commercially available product or may be synthesized. Commercially available polyorganosiloxanes include, for example, Wacker Chemical's WACKERSILICONE FLUID AK series (AK50, AK 350, AK 1000, AK 10000, AK 1000000) and GENIOPLAST GUM, Shin-Etsu Chemical Co., Ltd.'s dimethyl silicone oils (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968), and cyclic dimethyl silicone oil (KF-995); Gelest's epoxy group-containing polyorganosiloxanes (product names CMS-227, ECMS-327, EMS-622), and Shin-Etsu Chemical Co., Ltd.'s dimethyl silicone oils (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968). Examples of suitable polyorganosiloxanes include, but are not limited to, epoxy group-containing polyorganosiloxanes (KF-101, KF-1001, KF-1005, X-22-343), epoxy group-containing polyorganosiloxanes (DOWSIL BY16-839, DOWSIL 8413, DOWSIL 8411) manufactured by Dow-Toray Industries, Inc.; phenyl group-containing polyorganosiloxanes (PMM-1043, PMM-1025, PDM-0421, PDM-0821) manufactured by Gelest, phenyl group-containing polyorganosiloxane (KF50-3000CS) manufactured by Shin-Etsu Chemical Co., Ltd., and phenyl group-containing polyorganosiloxanes (TSF431, TSF433) manufactured by Momentive.

[0070] Commercially available carbinol-modified polyorganosiloxanes include, for example, KF6000, KF6001, KF6002, KF6003, X-22-4039, and X-22-4015 manufactured by Shin-Etsu Silicones Co., Ltd.; DMS-C15, DMS-C16, DMS-C21, DMS-C23, DBE-C25, DBE-C22, DMS-CA21, DMS-CS26, CMS-221, CMS-222, CMS-832, CMS-626, MCR-C12, MCR-C18, MCR-C22, MCS-C11, MCS-C13, MCR-C61, MCR-C62, and MCR-C63 manufactured by Gelest; and DOWSIL BY 16-201 and DOWSIL SF manufactured by Dow-Toray. Examples include 8427 Fluid and DOWSIL SF 8428 Fluid.

[0071] The content of the second component in the adhesive composition is not particularly limited, but from the viewpoint of optimally obtaining the effects of the present invention, it is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and particularly preferably 0.10% by mass or more, based on the non-volatile content of the adhesive composition. The upper limit is not particularly limited, but is, for example, preferably 50% by mass or less, more preferably 40% by mass or less, and particularly preferably 30% by mass or less.

[0072] <Solvent> The adhesive composition may contain a solvent for the purpose of adjusting viscosity, etc., and specific examples of the solvent include, but are not limited to, aliphatic hydrocarbons, aromatic hydrocarbons, and ketones. More specifically, examples of the solvent include, but are not limited to, hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, methylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, 5-nonanone, etc. These solvents can be used singly or in combination of two or more.

[0073] When the adhesive composition contains a solvent, the content of the solvent is appropriately set taking into consideration the desired viscosity of the composition, the coating method to be used, the thickness of the thin film to be produced, etc., but is, for example, in the range of about 10 to 90 mass % of the entire composition.

[0074] The viscosity of the adhesive composition used in the present invention is not particularly limited, but is usually 500 to 20,000 mPa·s, and preferably 1,000 to 1,0000 mPa·s at 25°C.

[0075] In the present invention, in order to remove foreign matter, the solvent, solution, etc. used may be filtered using a filter during the production of the adhesive composition or after all of the components have been mixed.

[0076] (Laminate) The laminate according to the present invention comprises a first substrate, a second substrate, and an adhesive layer. The first substrate is a semiconductor substrate or an electronic device layer. The second substrate is a support substrate that is transparent to the infrared laser.

[0077] The adhesive layer is disposed between the first substrate and the second substrate. The adhesive layer contacts the first substrate and the second substrate.

[0078] The laminate of the present invention is used for temporary bonding when processing a semiconductor substrate or an electronic device layer, and can be suitably used for processing such as thinning a semiconductor substrate or an electronic device layer. The semiconductor substrate is supported by the support substrate while it is being processed, such as thinned, etc. After the processing of the semiconductor substrate, the support substrate and the semiconductor substrate are separated. Furthermore, the electronic device layer is supported by the support substrate while the electronic device layer is being processed, such as being thinned, etc. After the processing of the electronic device layer, the support substrate and the electronic device layer are separated from each other. Residues of the adhesive layer remaining on the semiconductor substrate, the electronic device layer, or the support substrate after the semiconductor substrate or the electronic device layer is separated from the support substrate can be removed, for example, with a cleaning composition for cleaning semiconductor substrates and the like.

[0079] The laminated body will be described in detail below, with the laminated body including a semiconductor substrate and the laminated body including an electronic device layer being separated into two cases. The case where the laminate has a semiconductor substrate will be described below in the <First embodiment>, and the case where the laminate has an electronic device layer will be described below in the <Second embodiment>.

[0080] <First embodiment> The stacked structure having the semiconductor substrate is used for processing the semiconductor substrate. While the semiconductor substrate is being processed, the semiconductor substrate is adhered to a support substrate. After the processing of the semiconductor substrate, the semiconductor substrate is separated from the support substrate.

[0081] <<Semiconductor substrate>> The main material constituting the entire semiconductor substrate is not particularly limited as long as it is used for this type of application, but examples include silicon, silicon carbide, compound semiconductors, and glass substrates with organic resins. The shape of the semiconductor substrate is not particularly limited, but may be, for example, a disk shape. Note that the disk-shaped semiconductor substrate does not need to have a perfectly circular surface, and for example, the outer periphery of the semiconductor substrate may have a straight portion called an orientation flat or a notch. The thickness of the disk-shaped semiconductor substrate may be appropriately determined depending on the intended use of the semiconductor substrate, and is not particularly limited, but is, for example, 500 to 1,000 μm. The diameter of the disk-shaped semiconductor substrate may be appropriately determined depending on the intended use of the semiconductor substrate, and is not particularly limited, but is, for example, 100 to 1,000 mm.

[0082] The semiconductor substrate may have bumps, which are protruding terminals, such as electrodes. In the laminate, when the semiconductor substrate has bumps, the semiconductor substrate has the bumps on the support substrate side. In a semiconductor substrate, bumps are usually formed on the surface on which a circuit is formed. The circuit may be a single layer or a multilayer. There are no particular limitations on the shape of the circuit. In the semiconductor substrate, the surface opposite to the surface having the bumps (back surface) is the surface to be processed. The material, size, shape, structure, and density of the bumps on the semiconductor substrate are not particularly limited. Examples of the bumps include ball bumps, printed bumps, stud bumps, and plated bumps. Generally, the height, radius and pitch of the bumps are appropriately determined based on the conditions of a bump height of about 1 to 200 μm, a bump radius of 1 to 200 μm and a bump pitch of 1 to 500 μm. Examples of materials for the bumps include low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. The bumps may be composed of a single component or multiple components. More specifically, alloy platings mainly containing Sn, such as SnAg bumps, SnBi bumps, Sn bumps, and AuSn bumps, may be used. The bump may also have a laminated structure including a metal layer made of at least one of these components.

[0083] An example of a semiconductor substrate is a silicon wafer with a diameter of about 300 mm and a thickness of about 770 μm.

[0084] <<Support substrate>> The support substrate is not particularly limited as long as it is a member that can support the semiconductor substrate when the semiconductor substrate is processed and is transparent to an infrared laser, but examples thereof include a silicon support substrate.

[0085] The shape of the support substrate is not particularly limited, but may be, for example, a disk. Note that the surface of a disk-shaped support substrate does not necessarily have to be a perfect circle, and for example, the outer periphery of the support substrate may have a straight portion called an orientation flat or a notch. The thickness of the disk-shaped support substrate may be appropriately determined depending on the size of the semiconductor substrate, and is not particularly limited, but is, for example, 500 to 1,000 μm. The diameter of the disk-shaped support substrate may be appropriately determined depending on the size of the semiconductor substrate, and is not particularly limited, but is, for example, 100 to 1,000 mm.

[0086] An example of the support substrate is a silicon wafer with a diameter of about 300 mm and a thickness of about 700 μm.

[0087] <<Adhesive layer>> The adhesive layer is provided between the support substrate and the semiconductor substrate. The adhesive layer is in contact with, for example, a semiconductor substrate. The adhesive layer is in contact with, for example, a support substrate. The adhesive layer is an adhesive layer formed from an adhesive composition. In the adhesive layer, the first component or its cured product is present in greater amounts on the second substrate side than on the first substrate side, and the second component or its cured product is present in greater amounts on the first substrate side than on the second substrate side.

[0088] The thickness of the adhesive layer provided in the laminate of the present invention is not particularly limited, but is usually 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding non-uniformity due to a thick film, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and even more preferably 100 μm or less.

[0089] The method for forming the adhesive layer from the adhesive composition will be described in detail below in the section describing "Example of method for producing the laminate in the first embodiment."

[0090] An example of the configuration of the laminate of the first embodiment will be described below with reference to the drawings. FIG. 1 shows a schematic cross-sectional view of an example of the laminate of the first embodiment. 1 includes, in this order, a semiconductor substrate 1, an adhesive layer 2, and a support substrate 4. That is, the adhesive layer 2 is provided between the semiconductor substrate 1 and the support substrate 4. The adhesive layer 2 contacts the semiconductor substrate 1 and the support substrate 4. In the laminate of FIG. 1, the adhesive layer 2 has a first component layer 2x and a second component layer 2y. The first component layer 2x is located on the support substrate 4 side. The first component layer 2x contains a large amount of the first component or a cured product thereof. The second component layer 2y is located on the semiconductor substrate 1 side. The second component layer 2y contains a large amount of the second component or a cured product thereof. It should be noted that the boundary between the first component layer 2x and the second component layer 2y within the adhesive layer 2 does not need to be clear, as long as the first component or its cured product is present in greater amounts on the support substrate 4 side than on the semiconductor substrate 1 side, and the second component or its cured product is present in greater amounts on the semiconductor substrate 1 side than on the support substrate 4 side. For example, the concentration of the first component or its cured product may gradually decrease, and the concentration of the second component or its cured product may gradually increase, from the support substrate 4 side to the semiconductor substrate 1 side.

[0091] <<Example of manufacturing method of laminate in first embodiment>> A method for producing a laminate will be described below using the laminate shown in FIG. 1 as an example of the laminate in the first embodiment. An example of the laminate of the present invention can be produced by a method including the following first and second steps. First step: A step of applying an adhesive composition onto a semiconductor substrate to form an adhesive coating layer. Second step: The adhesive layer is heated to form an adhesive layer.

[0092] In one example of the present invention, in the adhesive layer of the laminate, the first component or its cured product is present in greater amounts on the support substrate side than on the semiconductor substrate side, and the second component or its cured product is present in greater amounts on the semiconductor substrate side than on the support substrate side. This particular state of presence in the adhesive layer is formed mainly through application and heating of the adhesive composition, and heating (post-heating) after applying a load in the thickness direction to the semiconductor substrate and support substrate. For example, in the adhesive coating layer after application, (i) phase separation occurs between the first component and the second component, and (ii) the second component selectively migrates to the semiconductor substrate side. Furthermore, for example, when heating is performed after a load is applied to the semiconductor substrate and the support substrate in the thickness direction, (iii) the first component selectively migrates to the support substrate side.

[0093] The method for applying the adhesive composition is not particularly limited, but is usually a spin coating method. Alternatively, a method may be employed in which a coating film is separately formed by a spin coating method or the like to form a sheet-like coating film, and the sheet-like coating film is then attached as an adhesive coating layer. The heating temperature of the applied adhesive composition cannot be generally specified because it varies depending on the type and amount of adhesive components contained in the adhesive composition, whether or not a solvent is contained, the boiling point of the solvent used, the desired thickness of the adhesive layer, etc., but is typically 80 to 150°C, and the heating time is typically 30 seconds to 5 minutes. When the adhesive composition contains a solvent, the applied adhesive composition is usually heated. The thickness of the adhesive coating layer obtained by applying the adhesive composition and heating it if necessary is usually about 5 to 500 μm, and is appropriately determined so that the final thickness of the adhesive layer falls within the above-mentioned range.

[0094] In the present invention, the laminate of the present invention can be obtained by applying a load in the thickness direction of the semiconductor substrate and the support substrate while performing a heat treatment, a decompression treatment, or both, and then performing a post-heat treatment. The treatment conditions to be adopted, whether heat treatment, decompression treatment, or a combination of both, are appropriately determined taking into consideration various factors such as the type of adhesive composition, the film thickness, and the desired adhesive strength.

[0095] The heat treatment temperature is generally determined appropriately from the range of 20 to 160° C., from the viewpoint of removing the solvent from the composition, etc. In particular, from the viewpoint of suppressing or avoiding excessive curing or unnecessary deterioration of the adhesive component, the temperature is preferably 150° C. or lower, more preferably 130° C. or lower, and the heating time is determined appropriately depending on the heating temperature and the type of adhesive, but from the viewpoint of reliably achieving suitable adhesion, it is generally 30 seconds or longer, preferably 1 minute or longer, and from the viewpoint of suppressing deterioration of the adhesive layer and other components, it is generally 10 minutes or shorter, preferably 5 minutes or shorter.

[0096] The reduced pressure treatment can be carried out by exposing the adhesive coated layers that are in contact with each other to an air pressure of 10 to 10,000 Pa. The reduced pressure treatment time is usually 1 to 30 minutes.

[0097] The load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate, the support substrate, and the layers therebetween and can firmly adhere them to each other, but is usually within the range of 10 to 50,000 N.

[0098] The post-heating temperature is preferably 120° C. or higher from the viewpoint of realizing a sufficient curing rate, and is preferably 260° C. or lower from the viewpoint of preventing deterioration of the substrate and each layer. The post-heating time is usually 1 minute or more, preferably 5 minutes or more, from the viewpoint of achieving suitable bonding of the substrates and layers that constitute the laminate, and is usually 180 minutes or less, preferably 120 minutes or less, from the viewpoint of suppressing or avoiding adverse effects on each layer due to excessive heating. Heating can be performed using a hot plate, an oven, etc. When post-heating is performed using a hot plate, the laminate may be heated with either the semiconductor substrate or the support substrate facing downward, but from the viewpoint of achieving suitable peeling with good reproducibility, post-heating is preferably performed with the semiconductor substrate facing downward. One purpose of the post-heat treatment is to achieve an adhesive layer that is a more suitable self-supporting film.

[0099] 2A to 2C are diagrams illustrating one embodiment of manufacturing a laminate. First, a laminate is prepared in which an adhesive coating layer 2a is formed on a semiconductor substrate 1 (FIG. 2A). This laminate can be obtained, for example, by applying an adhesive composition onto the semiconductor substrate 1 and heating it. 2A is then bonded to a support substrate 4 so that the adhesive coating layer 2a contacts the support substrate 4. Then, after applying a load in the thickness direction of the semiconductor substrate 1 and the support substrate 4 under reduced pressure, a heating device (hot plate, not shown) is placed on the surface of the semiconductor substrate 1 opposite to the surface where the adhesive coating layer 2a contacts, and the adhesive coating layer 2a is heated and hardened by the heating device, converting it into an adhesive layer 2 (FIG. 2B). Through these processes, phase separation and non-uniformity of concentration occur between the first component and the second component in the adhesive coating layer 2a, resulting in the formation of a first component layer 2x and a second component layer 2y in the adhesive layer 2. The laminate shown in FIG. 1 is obtained by the steps shown in FIGS. 2A and 2B.

[0100] <Second embodiment> The laminate having the electronic device layer is used for processing the electronic device layer. While the electronic device layer is being processed, the electronic device layer is adhered to a support substrate. After processing the electronic device layer, the electronic device layer is separated from the support substrate.

[0101] <<Electronic Device Layer>> The electronic device layer refers to a layer having an electronic device, and in the present invention, refers to a layer in which a plurality of semiconductor chip substrates are embedded in a sealing resin, that is, a layer consisting of a plurality of semiconductor chip substrates and a sealing resin disposed between the semiconductor chip substrates. Here, "electronic device" refers to a member that constitutes at least a part of an electronic component. The electronic device is not particularly limited and can be one in which various mechanical structures or circuits are formed on the surface of a semiconductor substrate. The electronic device is preferably a composite of a member made of metal or semiconductor and a resin that seals or insulates the member. The electronic device may have a rewiring layer (described later) and / or a semiconductor element or other element sealed or insulated with a sealing material or insulating material, and may have a single-layer or multi-layer structure.

[0102] <<Support substrate>> Examples of the support substrate include those similar to those explained in the section "Support substrate" in the "First embodiment" above.

[0103] <<Adhesive layer>> The adhesive layer is formed using the adhesive composition described above. The adhesive layer is described in detail in the section "Adhesive Layer" in the "First Embodiment" above.

[0104] An example of the configuration of the laminate of the second embodiment will be described below with reference to the drawings. The laminate of FIG. 3 includes a support substrate 24, an adhesive layer 22, and an electronic device layer 26, in that order. The electronic device layer 26 includes a plurality of semiconductor chip substrates 21 and sealing resin 25, which is a sealing material disposed between the semiconductor chip substrates 21. The adhesive layer 22 is provided between the electronic device layer 26 and the support substrate 24. The adhesive layer 22 contacts the electronic device layer 26 and the support substrate 24. 3, the adhesive layer 22 has a first component layer 22x and a second component layer 22y. The first component layer 22x is present on the support substrate 24 side. The first component layer 22x contains a large amount of the first component or a cured product thereof. The second component layer 22y is present on the electronic device layer 26 side. The second component layer 22y contains a large amount of the second component or a cured product thereof. It should be noted that the boundary between the first component layer 22x and the second component layer 22y within the adhesive layer 22 does not need to be clear, as long as the first component or its cured product is present in greater amounts on the support substrate 24 side than on the electronic device layer 26 side, and the second component or its cured product is present in greater amounts on the electronic device layer 26 side than on the support substrate 24 side. For example, the concentration of the first component or its cured product may gradually decrease, and the concentration of the second component or its cured product may gradually increase, from the support substrate 24 side toward the electronic device layer 26 side.

[0105] <<Example of manufacturing method of laminate in second embodiment>> A method for producing a laminate will be described below using the laminate shown in FIG. 3 as an example of the laminate in the second embodiment. The laminate of the present invention can be produced, for example, by a method including the following first to fourth steps. First step: A step of applying an adhesive composition to the surface of the support substrate to form an adhesive coating layer (and, if necessary, further heating to form an adhesive layer). The second step is to place the semiconductor chip substrate on the adhesive coating layer or adhesive layer, and bond the semiconductor chip substrate to the adhesive coating layer or adhesive layer while performing at least one of a heat treatment and a decompression treatment. The third step is to cure the adhesive layer by post-heat treatment to form an adhesive layer. The fourth step is to seal the semiconductor chip substrate fixed on the adhesive layer with a sealing resin. The second step will be explained in more detail, for example, by the step of the following embodiment (i). (i) A semiconductor chip substrate is placed on the adhesive coating layer or adhesive layer, and while performing at least one of a heat treatment and a decompression treatment, a load is applied in the thickness direction of the semiconductor chip substrate and the support substrate to bring them into close contact, and the semiconductor chip substrate is bonded to the adhesive coating layer or adhesive layer.

[0106] The third step may be performed after bonding the semiconductor chip substrate to the adhesive coating layer in the second step, or may be performed in conjunction with the second step. For example, the semiconductor chip substrate may be placed on the adhesive coating layer, and the adhesive coating layer may be heated and cured while a load is applied in the thickness direction of the semiconductor chip substrate and the support substrate, thereby simultaneously achieving close contact between the semiconductor chip substrate and the adhesive coating layer and curing the adhesive coating layer into the adhesive layer, thereby bonding the adhesive layer to the semiconductor chip substrate. In addition, the third step may be performed before the second step, and the semiconductor chip substrate may be placed on the adhesive layer, and the adhesive layer and the semiconductor chip substrate may be bonded together while applying a load in the thickness direction of the semiconductor chip substrate and the support substrate.

[0107] In one example of the present invention, the adhesive layer in the laminate has a greater amount of the first component or its cured product on the support substrate side than on the electronic device layer side, and a greater amount of the second component or its cured product on the electronic device layer side than on the support substrate side. This particular state of existence in the adhesive layer is formed mainly through application and heating of the adhesive composition, and heating (post-heating) after applying a load in the thickness direction to the semiconductor chip substrate and support substrate. For example, in the adhesive coating layer after application, (i) phase separation occurs between the first component and the second component, and (ii) the first component selectively migrates to the support substrate side. Furthermore, for example, when heating is performed after applying a load in the thickness direction to the semiconductor chip substrate and the support substrate, (iii) the second component selectively migrates to the semiconductor chip substrate side.

[0108] The application method, the heating temperature of the applied adhesive composition, the heating means, etc. are as described above in <<An example of a method for producing the laminate in the first embodiment>> of the <First embodiment>>.

[0109] The procedure for the method for producing the laminate of the second embodiment will be explained in more detail below with reference to the drawings. In this production method, the laminate shown in FIG. 3 is produced. 4A, an adhesive coating layer 22' made of an adhesive composition is formed on a support substrate 24. At this time, the adhesive coating layer 22' may be heated to form the adhesive layer 22. 4B, semiconductor chip substrate 21 is placed on adhesive layer 22 or adhesive coating layer 22', and while performing at least one of a heat treatment and a decompression treatment, a load is applied in the thickness direction of semiconductor chip substrate 21 and support substrate 24 to bring them into close contact, thereby bonding semiconductor chip substrate 21 to adhesive layer 22 or adhesive coating layer 22'. When semiconductor chip substrate 21 is bonded to adhesive coating layer 22', adhesive coating layer 22' is post-heat treated to harden it into adhesive layer 22, and semiconductor chip substrate 21 is fixed to adhesive layer 22. Through these processes, phase separation and non-uniformity of concentration occur between the first component and the second component in the adhesive coating layer 22a, resulting in the formation of a first component layer 22x and a second component layer 22y in the adhesive layer 22. Next, as shown in Fig. 4C, the semiconductor chip substrates 21 fixed on the adhesive layer 22 are sealed with sealing resin 25. In Fig. 4C, the plurality of semiconductor chip substrates 21 temporarily adhered to the support substrate 24 via the adhesive layer 22 are sealed with sealing resin 25. An electronic device layer 26 having the semiconductor chip substrates 21 and the sealing resin 25 disposed between the semiconductor chip substrates 21 is formed on the adhesive layer 22. In this way, the electronic device layer 26 is a base layer in which the plurality of semiconductor chip substrates are embedded in the sealing resin.

[0110] <<<Sealing process>>> The semiconductor chip substrate 21 is sealed using a sealing material. As a sealing material for sealing the semiconductor chip substrate 21, a material capable of insulating or sealing a member made of metal or semiconductor is used. In the present invention, for example, a resin composition (sealing resin) is used as the sealing material. The type of sealing resin is not particularly limited as long as it can seal and / or insulate metals or semiconductors, but it is preferable to use, for example, an epoxy resin or a silicone resin. The sealing material may contain other components such as a filler in addition to the resin component. Examples of the filler include spherical silica particles. In the sealing process, sealing resin heated to, for example, 130 to 170°C is supplied onto adhesive layer 22 while maintaining a high viscosity, so as to cover semiconductor chip substrate 21, and is compression molded to form a layer made of sealing resin 25 on adhesive layer 22. At this time, the temperature condition is, for example, 130 to 170°C. Also, the pressure applied to semiconductor chip substrate 21 is, for example, 50 to 500 N / cm 2 is.

[0111] (Method for manufacturing processed semiconductor substrates or electronic device layers) The laminate of the present invention can be used to provide a method for producing a processed semiconductor substrate or a processed electronic device layer. The "method for producing a processed semiconductor substrate" uses the laminate described in the "First embodiment" section of the above (Laminate), and the "method for producing a processed electronic device layer" uses the laminate described in the "Second embodiment" section of the above (Laminate). The "method for manufacturing a processed semiconductor substrate" will be explained in the <Third embodiment> below, and the "method for manufacturing a processed electronic device layer" will be explained in the <Fourth embodiment> below.

[0112] The method for producing a processed semiconductor substrate or electronic device layer includes the following steps. A processing step in which the first substrate of the laminate of the present invention is processed. A separation process in which an infrared laser is irradiated onto the adhesive layer from the second substrate side, and then the processed first substrate and second substrate are separated.

[0113] The infrared laser may have a wavelength of 1 μm to 20 μm, for example. The wavelength of the infrared laser is preferably 9.2 to 10.8 μm.

[0114] The infrared laser irradiation of the adhesive layer does not necessarily have to be performed on the entire adhesive layer. Even if there are areas irradiated with the infrared laser and areas not irradiated with the infrared laser, as long as the adhesive strength of a portion of the adhesive layer is sufficiently reduced, the second substrate can be peeled off from the laminate by applying a slight external force and lifting the second substrate. The ratio and positional relationship of the areas irradiated with the infrared laser and the areas not irradiated will vary depending on the adhesive composition forming the adhesive layer, the thickness of the adhesive layer, the intensity of the irradiated infrared laser, etc., but those skilled in the art can set appropriate conditions without excessive testing. For example, an area not irradiated with the infrared laser, having the same width as the infrared line width, may be provided adjacent to the area irradiated with the infrared laser. Furthermore, the infrared laser may be irradiated onto only the end portion of the adhesive layer sandwiched between the first substrate and the second substrate.

[0115] When the adhesive layer is irradiated with an infrared laser, the second component or its cured product absorbs the infrared light, causing deterioration or decomposition. Adhesive strength decreases in areas where the second component or its cured product is present in large amounts. In the adhesive layer, the first component or its cured product is present in greater amounts on the second substrate side than on the first substrate side, and the second component or its cured product is present in greater amounts on the first substrate side than on the second substrate side. Therefore, when the first and second substrates are separated, the adhesive layer can be peeled off without remaining on the first substrate, which is the semiconductor substrate or electronic device layer. As a result, the burden of cleaning the first substrate is reduced.

[0116] After irradiating the adhesive layer with an infrared laser, a material having a sharp edge may be inserted between the first substrate and the second substrate to make it easier to separate the first substrate and the second substrate.

[0117] The first substrate and the second substrate can be separated, for example, by holding the first substrate and the second substrate with a holder and moving one or both of the holders in a direction that separates the first substrate and the second substrate after the adhesive strength of the adhesive layer is reduced by irradiating the adhesive layer with an infrared laser. The holder may be, for example, a suction plate.

[0118] In the separation step, preferably, by irradiating the adhesive layer with an infrared laser, the insertion force required to insert the sharp portion of a substrate having a sharp portion between the first substrate and the second substrate to separate the first substrate and the second substrate is reduced compared to when the adhesive layer is not irradiated with an infrared laser. In other words, it is preferable that the insertion force (Fb) required to insert the sharp portion of a substrate having a sharp portion between the first substrate and the second substrate to separate the first substrate and the second substrate after irradiating the adhesive layer with an infrared laser is smaller than the insertion force (Fa) required to insert the sharp portion of a substrate having a sharp portion between the first substrate and the second substrate to separate the first substrate and the second substrate without irradiating the adhesive layer with an infrared laser. The insertion force (Fa) is, for example, 0.1N to 100N.

[0119] The ratio (Fb / Fa) of the insertion force (Fa) to the insertion force (Fb) is not particularly limited, but is preferably less than 1.0, more preferably 0.9 or less, and even more preferably 0.6 or less. The lower limit of the ratio (Fb / Fa) is not particularly limited, but the ratio (Fb / Fa) may be 0.01 or more, 0.05 or more, or 0.1 or more. The insertion force is measured, for example, as described above.

[0120] <Third embodiment> The method for producing a processed semiconductor substrate of the present invention includes the following step 5A and step 6A. The method for producing a processed semiconductor substrate may further include the following step 7A. Here, step 5A is a step of processing the semiconductor substrate in the laminate described in the above section <First embodiment>. Step 6A is a step of separating the semiconductor substrate processed in Step 5A from the support substrate. Step 7A is a step of cleaning the processed semiconductor substrate after step 6A.

[0121] The processing performed on the semiconductor substrate in step 5A is, for example, processing of the side opposite the circuit surface of the wafer, such as thinning the wafer by polishing the back surface of the wafer. Thereafter, for example, through-silicon vias (TSVs) are formed, and then the thinned wafer is peeled off from the support substrate to form a wafer stack, which is then three-dimensionally mounted. Also, for example, before or after this, wafer backside electrodes are formed. During the wafer thinning and TSV process, the wafer is subjected to a heat load of approximately 250 to 350°C while adhered to the support substrate. The laminate of the present invention, including the adhesive layer, is typically heat-resistant to this load. The processing is not limited to the above, and also includes, for example, the implementation of a mounting process for semiconductor components when a substrate for mounting the semiconductor components is temporarily bonded to a support substrate to support the substrate.

[0122] In the step 6A, the method for separating (peeling) the semiconductor substrate and the support substrate is the above-mentioned separation step.

[0123] The substrates can be cleaned by spraying the cleaning composition onto the surface of at least one of the separated semiconductor substrate and supporting substrate, or by immersing the separated semiconductor substrate or supporting substrate in the cleaning composition. Furthermore, the surface of the processed semiconductor substrate or the like may be cleaned using a removal tape or the like. As an example of cleaning the substrate, after the step 6A, a step 7A of cleaning the processed semiconductor substrate may be performed. Examples of detergent compositions used for cleaning include the following.

[0124] The cleaning composition typically contains a solvent. Examples of the solvent include lactones, ketones, polyhydric alcohols, compounds having an ester bond, derivatives of polyhydric alcohols, cyclic ethers, esters, and aromatic organic solvents. Examples of lactones include γ-butyrolactone. Examples of ketones include acetone, methyl ethyl ketone, cyclohexanone, methyl-n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone. Examples of polyhydric alcohols include ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol. Examples of compounds having an ester bond include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate. Examples of derivatives of polyhydric alcohols include monoalkyl ethers such as monomethyl ether, monoethyl ether, monopropyl ether, and monobutyl ether of the above polyhydric alcohols or compounds having an ester bond, or compounds having an ether bond such as monophenyl ether, etc. Among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred. Examples of cyclic ethers include dioxane. Examples of esters include methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, and ethyl ethoxypropionate. Examples of aromatic organic solvents include anisole, ethyl benzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether, phenetole, butyl phenyl ether, ethyl benzene, diethyl benzene, pentyl benzene, isopropyl benzene, toluene, xylene, cymene, and mesitylene. These may be used alone or in combination of two or more. Among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, and ethyl lactate (EL) are preferred.

[0125] A mixed solvent of PGMEA and a polar solvent is also preferred. The blending ratio (mass ratio) may be appropriately determined taking into consideration the compatibility of PGMEA with the polar solvent, and is preferably within the range of 1:9 to 9:1, and more preferably 2:8 to 8:2. For example, when EL is blended as the polar solvent, the mass ratio of PGMEA:EL is preferably 1:9 to 9:1, more preferably 2:8 to 8:2. When PGME is blended as the polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3. When PGME and cyclohexanone are blended as the polar solvents, the mass ratio of PGMEA:(PGME + cyclohexanone) is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3.

[0126] The cleaning composition may or may not contain a salt; however, the absence of a salt is preferred in terms of increasing versatility in processing semiconductor substrates using the laminate and reducing costs.

[0127] An example of a cleaning composition containing a salt is a cleaning composition containing a quaternary ammonium salt and a solvent. The quaternary ammonium salt is composed of a quaternary ammonium cation and an anion, and is not particularly limited as long as it is used for this type of application. A typical example of such a quaternary ammonium cation is a tetra(hydrocarbon)ammonium cation. On the other hand, an anion paired with the quaternary ammonium cation is a hydroxide ion (OH - ); fluorine ion (F - ), chloride ions (Cl - ), bromide ion (Br - ), iodine ion (I - ) and other halogen ions; tetrafluoroborate ion (BF4 - ); Hexafluorophosphate ion (PF6 -) and the like, but are not limited to these.

[0128] The quaternary ammonium salt is preferably a halogen-containing quaternary ammonium salt, more preferably a fluorine-containing quaternary ammonium salt. In the quaternary ammonium salt, the halogen atom may be contained in either the cation or the anion, but is preferably contained in the anion.

[0129] In a preferred embodiment, the fluorine-containing quaternary ammonium salt is a tetra(hydrocarbon)ammonium fluoride. Specific examples of the hydrocarbon group in tetra(hydrocarbon)ammonium fluoride include alkyl groups having 1 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, alkynyl groups having 2 to 20 carbon atoms, and aryl groups having 6 to 20 carbon atoms. In a more preferred embodiment, the tetra(hydrocarbon)ammonium fluoride comprises a tetraalkylammonium fluoride. Specific examples of tetraalkylammonium fluorides include, but are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride (also called tetrabutylammonium fluoride), etc. Among these, tetrabutylammonium fluoride is preferred.

[0130] The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used in the form of hydrates. The quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride may be used singly or in combination of two or more. The amount of the quaternary ammonium salt is not particularly limited as long as it dissolves in the solvent contained in the detergent composition, but is usually 0.1 to 30% by mass relative to the detergent composition.

[0131] When the cleaning composition contains a salt, the solvent to be used in combination with the salt is not particularly limited as long as it is used for this type of application and dissolves the salt, such as a quaternary ammonium salt. However, from the viewpoint of reproducibly obtaining a cleaning composition having excellent cleaning properties and from the viewpoint of satisfactorily dissolving the salt, such as a quaternary ammonium salt, and obtaining a cleaning composition with excellent uniformity, the cleaning composition preferably contains one or two or more amide solvents.

[0132] A suitable example of the amide solvent is an acid amide derivative represented by formula (Z). [ka]

[0133] In the formula, R 0 represents an ethyl group, a propyl group, or an isopropyl group, preferably an ethyl group or an isopropyl group, and more preferably an ethyl group. A and R B each independently represents an alkyl group having 1 to 4 carbon atoms. The alkyl group having 1 to 4 carbon atoms may be linear, branched, or cyclic, and specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, a cyclopropyl group, an n-butyl group, an isobutyl group, an s-butyl group, a t-butyl group, and a cyclobutyl group. Of these, R A and R B As the alkyl group, a methyl group or an ethyl group is preferred, and both of them are more preferably methyl groups or ethyl groups, and both of them are even more preferably methyl groups.

[0134] Examples of the acid amide derivative represented by formula (Z) include N,N-dimethylpropionamide, N,N-diethylpropionamide, N-ethyl-N-methylpropionamide, N,N-dimethylbutyric acid amide, N,N-diethylbutyric acid amide, N-ethyl-N-methylbutyric acid amide, N,N-dimethylisobutyric acid amide, N,N-diethylisobutyric acid amide, N-ethyl-N-methylisobutyric acid amide, etc. Among these, N,N-dimethylpropionamide and N,N-dimethylisobutyric acid amide are particularly preferred, and N,N-dimethylpropionamide is more preferred.

[0135] The acid amide derivative represented by formula (Z) may be synthesized by a substitution reaction between the corresponding carboxylic acid ester and an amine, or a commercially available product may be used.

[0136] Another example of a preferred amide solvent is a lactam compound represented by formula (Y). [ka]

[0137] In formula (Y), R 101 represents a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R 102 represents an alkylene group having 1 to 6 carbon atoms. Specific examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, and an n-butyl group, and specific examples of the alkylene group having 1 to 6 carbon atoms include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, and a hexamethylene group, but are not limited to these.

[0138] Specific examples of the lactam compound represented by formula (Y) include α-lactam compounds, β-lactam compounds, γ-lactam compounds, δ-lactam compounds, etc., which can be used alone or in combination of two or more.

[0139] In a preferred embodiment, the lactam compound represented by formula (Y) comprises 1-alkyl-2-pyrrolidone (N-alkyl-γ-butyrolactam), in a more preferred embodiment, N-methylpyrrolidone (NMP) or N-ethylpyrrolidone (NEP), and in an even more preferred embodiment, N-methylpyrrolidone (NMP).

[0140] The cleaning composition used in the present invention may contain water as a solvent, but typically only an organic solvent is used as the solvent to avoid corrosion of the substrate, etc. In this case, however, it is not excluded that the cleaning composition may contain water of hydration of salts or trace amounts of water contained in the organic solvent. The water content of the cleaning composition used in the present invention is typically 5% by mass or less.

[0141] The constituent elements and methodological elements relating to the above-described steps of the method for manufacturing a processed semiconductor substrate of the present invention may be modified in various ways without departing from the spirit and scope of the present invention. The method for producing a processed semiconductor substrate of the present invention may include steps other than those described above.

[0142] An example of the third embodiment will be described with reference to Figures 5A to 5E. This example is an example of manufacturing a thinned semiconductor substrate. First, a laminate is prepared (FIG. 5A). This laminate is the same as the laminate shown in FIGS. 1 and 2B. Next, a polishing device (not shown) is used to polish the surface of the semiconductor substrate 1 opposite to the surface in contact with the adhesive layer 2, thereby thinning the semiconductor substrate 1 (FIG. 5B). Note that the thinned semiconductor substrate 1 may be subjected to the formation of through electrodes, etc. Next, the adhesive layer 2 is irradiated with an infrared laser L from the support substrate 4 side (FIG. 5C). The infrared laser may be irradiated onto the entire surface of the adhesive layer 2, or may be irradiated onto a part of the surface. Next, a peeling device (not shown) is used to separate the thinned semiconductor substrate 1 from the support substrate 4 (FIG. 5D). This results in a thinned semiconductor substrate 1 (FIG. 5E). When the adhesive layer 2 is irradiated with an infrared laser, the second component or its cured product absorbs the infrared light and changes or decomposes. The adhesive strength decreases in areas where the second component or its cured product is present in large amounts (second component layer 2y). In the adhesive layer 2, the first component or its cured product is present in greater amounts on the support substrate 4 side than on the semiconductor substrate 1 side (second component layer 2y), and the second component or its cured product is present in greater amounts on the semiconductor substrate 1 side than on the support substrate 4 side (first component layer 2x). Therefore, when the semiconductor substrate 1 and the support substrate 4 are separated, the adhesive layer 2 can be peeled off without remaining on the semiconductor substrate 1. As a result, the burden of cleaning the semiconductor substrate 1 is reduced. However, a small amount of residue of the adhesive layer 2 may remain on the thinned semiconductor substrate 1. Therefore, it is preferable to clean the thinned semiconductor substrate 1 with a cleaning composition to remove the residue of the adhesive layer 2 from the semiconductor substrate 1.

[0143] <Fourth embodiment> The method for producing a processed electronic device layer of the present invention includes the following Step 5B and Step 6B. The method for producing a processed electronic device layer may further include the following Step 7B. Here, Step 5B is a step of processing the electronic device layer in the laminate described in the section <Second embodiment> above. Step 6B is a step of separating the electronic device layer processed in Step 5B from the support substrate. Step 7B is a step of cleaning the processed electronic device layer after Step 6B. A specific example of the fourth embodiment will be described below with reference to FIGS. 6A to 6F.

[0144] Examples of the processing performed on the electronic device layer in the step 5B include a grinding step and a wiring layer forming step.

[0145] <<Grinding process>> The grinding step is a step of grinding away the resin portion of the sealing resin 25 layer in the electronic device layer 26 so that a part of the semiconductor chip substrate 21 is exposed. Grinding of the sealing resin portion is performed, for example, as shown in Fig. 6B, by grinding the layer of sealing resin 25 of the stack shown in Fig. 6A until it has a thickness substantially equal to that of the semiconductor chip substrate 21. The stack shown in Fig. 6A is the same stack as the stacks shown in Figs. 3 and 4C.

[0146] <<Wiring layer formation process>> The wiring layer forming step is a step of forming a wiring layer on the semiconductor chip substrate 21 exposed after the grinding step. In FIG. 6C, a wiring layer 28 is formed on an electronic device layer 26 made up of a semiconductor chip substrate 21 and a layer of sealing resin 25. The wiring layer 28 is also called an RDL (Redistribution Layer), and is a thin-film wiring body that forms wiring connected to the substrate, and can have a single-layer or multi-layer structure. x The wiring may be formed by a conductor (for example, a metal such as aluminum, copper, titanium, nickel, gold, or silver, or an alloy such as a silver-tin alloy) between a conductive material (e.g., a photosensitive resin such as a photosensitive epoxy, or the like), but is not limited to this. The wiring layer 28 may be formed, for example, by the following method. First, silicon oxide (SiO x ), a dielectric layer of a photosensitive resin or the like is formed. The dielectric layer made of silicon oxide can be formed by, for example, a sputtering method, a vacuum deposition method, or the like. The dielectric layer made of a photosensitive resin can be formed by applying the photosensitive resin onto the layer of sealing resin 25 by, for example, a method such as spin coating, dipping, roller blade, spray coating, or slit coating. Subsequently, wiring is formed on the dielectric layer using a conductor such as a metal. Methods for forming the wiring include known semiconductor processing techniques such as lithography processes such as photolithography (resist lithography) and etching processes. Examples of such lithography processes include lithography processes using a positive resist material and lithography processes using a negative resist material. In the method for manufacturing a laminate according to the fourth embodiment, it is further possible to form bumps or mount elements on the wiring layer 28. Mounting elements on the wiring layer 28 can be performed using, for example, a chip mounter or the like. The stack according to the fourth embodiment may be a stack produced in a process based on fan-out technology, in which terminals provided on a semiconductor chip substrate are mounted on a wiring layer extending outside the chip area.

[0147] In Step 6B, the method for separating (peeling) the electronic device layer from the support substrate is the separation step described above.

[0148] 6D to 6F are schematic cross-sectional views for explaining a method for separating the laminated body. One embodiment of a method for manufacturing a semiconductor package (electronic component) can be explained with reference to FIGS. The step of separating the laminate is a step of separating the electronic device layer 26 and the support substrate 24, as shown in FIGS. 6D and 6E. Specifically, an infrared laser L is irradiated onto the adhesive layer 22 from the support substrate 24 side (FIG. 6D). The infrared laser may be irradiated onto the entire adhesive layer 22, or may be irradiated onto a portion of the adhesive layer 22. Next, a peeling device (not shown) is used to separate the thinned electronic device layer 26 from the support substrate 24 (FIG. 6E). When the adhesive layer 22 is irradiated with an infrared laser, the first component or its cured product absorbs the infrared light and changes or decomposes. The adhesive strength decreases in areas where the first component or its cured product is present in large amounts (second component layer 22y). In the adhesive layer 22, the first component or its cured product is present in greater amounts on the support substrate 24 side than on the electronic device layer 26 side (second component layer 22y), and the second component or its cured product is present in greater amounts on the electronic device layer 26 side than on the support substrate 24 side (first component layer 22x). Therefore, when the electronic device layer 26 and the support substrate 24 are separated, the adhesive layer 22 can be peeled off without remaining on the electronic device layer 26. As a result, the burden of cleaning the electronic device layer 26 is reduced.

[0149] The substrate can be cleaned by spraying the cleaning composition onto the surface of at least one of the separated electronic device layer and the supporting substrate, or by immersing the separated electronic device layer or the supporting substrate in the cleaning composition. The surface of the processed electronic device layer or the like may also be cleaned using a removal tape or the like. As a result of the above, a processed electronic device layer (electronic component) as shown in FIG. 6F can be suitably obtained.

[0150] The components and methodological elements of the above-described steps of the method for producing a processed electronic device layer of the present invention may be modified in various ways without departing from the spirit and scope of the present invention. The method for producing a processed electronic device layer of the present invention may include steps other than those described above. [Explanation of symbols]

[0151] 1. Semiconductor substrate 2 Adhesive layer 2a Adhesive coating layer 2x 1st component layer 2y 2nd component layer 4 Support substrate 21 Semiconductor chip substrate 22 Adhesive layer 22' adhesive coating layer 22x 1st component layer 22y 2nd component layer 24 Support substrate 25 Sealing resin 26 Electronic Device Layer 28 wiring layer L Infrared laser

Claims

1. An adhesive composition for forming an adhesive layer used to separate the first substrate from the second substrate, the adhesive layer being formed in a laminate having a first substrate which is a semiconductor substrate or an electronic device layer, a second substrate which is a support substrate which transmits an infrared laser, and an adhesive layer provided between the first substrate and the second substrate, the adhesive layer being irradiated with the infrared laser from the second substrate side after processing the first substrate, The composition contains a first component that transmits infrared rays and a second component that absorbs infrared rays, In the adhesive layer, the first component or a cured product thereof is present in a larger amount on the second substrate side than on the first substrate side, and the second component or a cured product thereof is present in a larger amount on the first substrate side than on the second substrate side. Adhesive composition.

2. The adhesive composition of claim 1 , wherein the second component comprises an infrared absorber.

3. 2. The adhesive composition according to claim 1, wherein the insertion force required when inserting the sharp portion of a substrate having a sharp portion between the first substrate and the second substrate to separate the first substrate and the second substrate after irradiating the adhesive layer with the infrared laser is smaller than the insertion force required when inserting the sharp portion between the first substrate and the second substrate without irradiating the adhesive layer with the infrared laser to separate the first substrate and the second substrate.

4. a first substrate which is a semiconductor substrate or an electronic device layer; a second base that is a support substrate that transmits an infrared laser; an adhesive layer provided between the first substrate and the second substrate; A laminate, wherein the adhesive layer is an adhesive layer formed from the adhesive composition according to any one of claims 1 to 3.

5. a processing step in which the first substrate of the laminate according to claim 4 is processed; a separation step of irradiating the adhesive layer with the infrared laser from the second substrate side, and then separating the processed first substrate and the second substrate; 1. A method for producing a processed semiconductor substrate or electronic device layer, comprising:

6. 6. The method for manufacturing a processed semiconductor substrate or electronic device layer according to claim 5, wherein irradiating the adhesive layer with the infrared laser reduces an insertion force required to insert a sharp portion of a material having a sharp portion between the first substrate and the second substrate to separate the first substrate and the second substrate, compared to a case where the infrared laser is not irradiated to the adhesive layer.

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