Thermal conductor, heat spreader, and heat dissipation structure
The thermal conductor with a diamond-containing metal layer, where diamonds are arranged to form edges for face-to-face contact, addresses the inefficiency of horizontal heat transfer, resulting in improved thermal conductivity and heat dissipation.
Patent Information
- Application Number
- JP2024053895
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-03-28
- Publication Date
- 2025-10-09
- Estimated Expiration
- 2044-03-28
AI Technical Summary
Existing heat transfer structures with diamonds arranged at intervals fail to fully utilize the heat transfer performance due to lack of horizontal heat transfer between diamonds, limiting the efficiency of heat dissipation.
A thermal conductor with a diamond-containing metal layer where diamonds are arranged in a single layer with their vertices or ridges forming edges, allowing for face-to-face contact and increased horizontal heat flow paths, enhancing thermal conductivity.
The configuration facilitates wider heat diffusion and improves thermal conductivity by forming both vertical and horizontal heat flow paths, increasing the contact area between adjacent diamonds and enhancing heat transfer performance.
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Figure 2025152139000001_ABST
Abstract
Description
[Technical Field]
[0001] The present invention relates to a thermal conductor and a heat spreader, and also to a heat dissipation structure including the heat spreader. [Background technology]
[0002] It is known that diamond, which has excellent thermal conductivity, is used to improve the performance of heat sinks and heat spreaders. For example, Patent Document 1 discloses an insulating and heat transfer structure comprising an insulator layer and high thermal conductor layers arranged on both sides of the insulator layer, the insulator layer having a bonding layer and insulating, highly thermally conductive hard particles protruding from the high thermal conductor layer, characterized in that a plurality of particle groups in which the insulating, highly thermally conductive hard particles are arranged at equal intervals in one in-plane direction of the bonding layer are arranged at equal intervals in a different direction from the one in-plane direction, and diamond is described as one of the insulating, highly thermally conductive hard particles. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-214492 Summary of the Invention [Problem to be solved by the invention]
[0004] By using a structure with a layer of diamonds arranged between the heat source and the heat sink, the heat flow path (vertical route) from the heat source to the heat sink can be improved. However, in the structure of Patent Document 1, the diamonds are arranged at intervals, and there is no heat transfer between the diamonds (horizontal route), so it cannot be said that the heat transfer performance of the diamonds is fully utilized.
[0005] Under these circumstances, an object of the present invention is to provide a thermal conductor and a heat spreader that can form a heat flow path between adjacent diamonds, and a heat dissipation structure that includes the heat spreader. [Means for solving the problem]
[0006] The thermal conductor of the present invention is a thermal conductor having a diamond-containing metal layer containing a plurality of diamonds arranged in a single layer and a metal that fixes the diamonds, wherein the diamonds are polyhedrons with octahedrons or greater, adjacent diamonds are in face-to-face contact, and the diamonds are arranged so that the ends of the diamonds on one side of the diamond-containing metal layer form vertices or ridges.
[0007] In this way, by using diamonds with octahedrons or more and arranging the diamonds in a single layer so that their vertices or ridges (hereinafter, "vertices or ridges" are referred to as "edges") are at the edge of one side of the diamond-containing metal layer, it is possible to make the layer thinner and easily form a structure in which adjacent diamonds face each other, and due to the dense structure, there is also a conformal action, increasing the area of face-to-face contact between adjacent diamonds. As a result, by forming heat flow paths (horizontal routes) between the diamonds in addition to the heat flow paths (vertical routes) from the heat source, heat can be diffused more widely, and the heat transfer performance of the diamond can be fully utilized.
[0008] Furthermore, with this configuration, adjacent diamonds can easily come into surface contact with each other regardless of the shape or alignment of the diamonds, which increases the degree of freedom in the shape of the diamonds used and therefore increases the degree of freedom in production.
[0009] In addition, "vertex" refers to the point that three or more ridgelines (sides) of diamond share, and "ridgeline" refers to the line that connects the vertices of diamond.In addition, in this application, "end" refers to the part that is furthest from the center in the thickness direction.For example, "end of one face side of diamond-containing metal layer" refers to the part that is furthest from the center in the diamond in the thickness direction of diamond-containing metal layer in the direction of one face of diamond-containing metal layer, and when the vertex of diamond is the part that is furthest from the center in the direction of one face of diamond-containing metal layer, the end of one face side of diamond-containing metal layer of diamond is vertex, when the ridgeline of diamond is the part that is furthest from the center in the direction of one face of diamond-containing metal layer, the end of one face side of diamond-containing metal layer of diamond is ridgeline, and when the face of diamond is the part that is furthest from the center in the direction of one face of diamond-containing metal layer, the end of one face side of diamond-containing metal layer of diamond is face.
[0010] Furthermore, it is preferable that the volume fraction of diamond in the diamond-containing metal layer is 50% or more. By increasing the diamond packing rate in this way, adjacent diamonds come into contact with each other more easily, and more heat flow paths (lateral routes) can be formed between the diamonds, thereby further improving thermal conductivity.
[0011] In the thermoelectric element of the present invention, the diamond is preferably a truncated octahedron or a hexagonal octahedron. By using diamonds of this shape, when the diamonds are arranged so that the ends on one side of the diamond-containing metal layer form the edge portion, the diamonds can be arranged at a higher density, further increasing the heat flow path between the diamonds.
[0012] The heat conductor of the present invention may comprise a heat conductive member having a flat surface and the diamond-containing metal layer disposed on at least one side of the flat surface. By combining the heat conductive member in this way, the degree of freedom in designing the shape of the heat conductor can be increased.
[0013] The thermal conductor of the present invention can be used as a heat spreader, that is, the heat spreader of the present invention is made of the thermal conductor of the present invention.
[0014] The heat spreader of the present invention can be incorporated into a heat dissipation structure, which includes the heat spreader of the present invention disposed on and thermally connected to a heat source, and a heat sink disposed on and thermally connected to the heat spreader. By incorporating the heat spreader of the present invention in this manner, heat that has flowed into the heat spreader from a heat source can be efficiently transferred from the heat spreader to a heat sink, resulting in a heat dissipation structure with excellent heat dissipation properties. [Effects of the Invention]
[0015] According to the present invention, there are provided a thermal conductor and a heat spreader capable of forming a heat flow path between adjacent diamonds, and a heat dissipation structure including the heat spreader. [Brief explanation of the drawings]
[0016] [Figure 1] 1 is a schematic diagram of a thermal conductor according to an embodiment of the present invention. [Figure 2] 2A to 2C are diagrams for explaining a method for manufacturing the thermal conductor of FIG. 1. [Figure 3] FIG. 10 is a diagram for explaining the difference depending on how diamonds are arranged. [Figure 4] FIG. 4 is a schematic diagram of a thermal conductor according to another embodiment of the present invention. [Figure 5] FIG. 4 is a schematic diagram of a thermal conductor according to another embodiment of the present invention. [Figure 6] FIG. 4 is a schematic diagram of a thermal conductor according to another embodiment of the present invention. [Figure 7] 1 is a schematic diagram of a heat dissipation structure according to an embodiment of the present invention. [Figure 8] 8 is a diagram for explaining the configuration of the heat dissipation structure of FIG. 7 in more detail. [Figure 9] FIG. 10 is a schematic diagram of a heat dissipation structure according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION
[0017] Hereinafter, an embodiment of the present invention will be described in detail with reference to Figures 1 to 9. However, the description of the constituent elements described below is one example (typical example) of an embodiment of the present invention, and the present invention is not limited to the following content unless the gist of the present invention is changed. In addition, when the expression "to" is used in this specification, it is used as an expression including the numerical value or physical property value before and after it. Furthermore, parts that are common to Figures 1 to 9 are assigned the same reference numerals and descriptions thereof will be omitted.
[0018] <Embodiment 1> Figure 1 is a schematic diagram of a thermal conductor 100 according to the present invention. The thermal conductor 100 shown in Figure 1 is a plate-like body made of a diamond-containing metal layer 20 containing a plurality of diamonds 40 arranged in one layer and a metal 42 that fixes the diamonds 40 in place.
[0019] In the diamond-containing metal layer 20, the diamond 40 is a truncated octahedron. The diamond 40 is arranged so that an end 40B on the side of face 20B, which is one face of the diamond-containing metal layer 20, is on face 20B, and the end 40B is an edge portion. That is, only the edge portion of the diamond 40 contacts face 20B of the diamond-containing metal layer 20. Also, only the edge portion of the diamond 40 contacts the other face of the diamond-containing layer 20 (the face opposite face 20B). Also, adjacent diamonds 40 are in face-to-face contact. At this time, by making the hexagonal faces of the diamonds 40 face-to-face, the lateral contact area can be made large.
[0020] Furthermore, the volume ratio of diamond 40 in diamond-containing metal layer 20 is 50% or more (for example, 50% to 80%). The volume ratio of diamond 40 is a value obtained by dividing the volume of diamond 40, which is obtained by dividing the mass of diamond 40 by the specific gravity of diamond 40, by the volume of diamond-containing metal layer 20.
[0021] (Production Example 1) The thermal conductor of the present invention can be obtained, for example, by a method including a step of arranging a plurality of diamonds in a layer on a substrate with the edges of the diamonds facing the substrate, and a step of plating the substrate on which the diamonds are arranged to form a plating layer.
[0022] The thermal conductor 100 can be obtained, for example, as shown in FIG. 2, by a method including the steps of arranging a plurality of diamonds 40 in a layer on a substrate 44 with the edges of the diamonds 40 facing the substrate 44, plating the substrate 44 on which the diamonds 40 are arranged to form a diamond-containing metal layer 20, and separating the substrate 44 and the diamond-containing metal layer 20.
[0023] 2, first, diamonds 40 are filled onto a substrate 44 while being vibrated, and the diamonds 40 are arranged at high density with their edges facing downwards, with adjacent diamonds 40 in face-to-face contact (FIG. 2(A)). In this case, the end of the diamond 40 on the substrate 44 side is the end 40B of the diamond 40. The substrate 44 may be made of, for example, metals such as stainless steel, copper, aluminum, steel, cemented carbide, molybdenum, molybdenum alloy, cermet, or titanium, ceramics, plastic, or the like.
[0024] The diamonds 40 are preferably selected from those with an average particle size of 35 μm to 1000 μm. The proportion of diamonds 40 with particle sizes within ±15% of the average particle size is preferably 90% or more, more preferably 93% or more, and even more preferably 95% or more. By using diamonds 40 with uniform particle sizes, it is easy to form a structure in which diamonds 40 are arranged at higher density with their edges facing the substrate. This average particle size is the average value of the particle sizes of 100 diamonds 40, and the particle size of each diamond 40 is the average value of the long and short sides of the circumscribing rectangle. When calculating this average particle size, the proportion of diamonds 40 with particle sizes within ±15% of the average particle size can also be calculated.
[0025] Next, metal 42 is deposited on substrate 44 by plating, thereby adhering diamond 40 with metal 42, and diamond-containing metal layer 20 is formed on substrate 44 (FIG. 2(B)). Preferred metal 42 is nickel or an alloy thereof, examples of which include Ni, Ni-S alloy, Ni-P alloy, Ni-B alloy, and Ni-Co alloy.
[0026] 2(B), plating is performed up to the top of the diamond 40, but plating is not limited to this. Plating may be performed so that the edge of the diamond 40 protrudes without plating up to the top of the diamond 40, and the diamond-containing metal layer 20 may have a structure in which the diamond 40 protrudes from the other surface 20S. Alternatively, the plating may be formed thick and polished after plating to adjust the volume ratio of the diamond 40 in the diamond-containing metal layer 20 to 50% or more, but considering productivity, etc., plating is preferably performed so that the volume ratio of the diamond 40 in the diamond-containing metal layer 20 is 50% or more. Considering the stability and productivity of the fixed diamond 40, the plating thickness is preferably about 35 to 95% of the average particle size of the diamond 40.
[0027] After the plating process, the substrate 44 and the diamond-containing metal layer 20 are separated to obtain a plate-shaped diamond-containing metal layer 20 (FIG. 2(C)).
[0028] As will be described later, the diamond-containing metal layer 20 may be used without being separated from the substrate 44, and when the thermal conductor 100 is combined with another member such as a heat sink, the thermal conductor 100 may be formed directly on the other member.
[0029] It should be noted that the majority of the diamonds 40 arranged in the diamond-containing metal layer 20 should have their ends 40B as edge portions, and some may have ends 40B as faces. The proportion of diamonds 40 whose ends 40B are edge portions and that are in face-to-face contact with adjacent diamonds 40 is, specifically, 50% or more of the diamonds contained in the diamond-containing metal layer 20, preferably 60% or more, more preferably 70% or more, and even more preferably 80% or more. The shape of the diamond's end 40B and whether or not there is face-to-face contact with adjacent diamonds can be determined, for example, by observing the diamond-containing metal layer 20 with a microscope, and can be evaluated by exposing the diamonds 40 on the front or back side as necessary and then observing with the microscope.
[0030] Furthermore, while the diamonds in the thermal conductor 100 are truncated octahedrons, the shape of the diamonds in the thermal conductor of the present invention is not limited to this and may be any shape greater than or equal to an octahedron. As shown in Figure 3, a structure in which diamonds 46 are arranged in a single layer with face S facing the face B1 on which the diamonds 46 are arranged (Figure 3(A)) facilitates point contact between adjacent diamonds 46 (areas surrounded by dotted lines in the figure). In contrast, a structure in which diamonds 46 are arranged in a single layer with edge E facing face B1 (Figure 3(B)) facilitates surface contact between adjacent diamonds 46 (areas surrounded by dotted lines in the figure) regardless of the shape or orientation of the diamonds 46. Furthermore, by arranging diamonds densely, as in the thermal conductor of the present invention, a shaping action due to the density can be expected, resulting in surface contact with a large contact area between adjacent diamonds. This allows for looser restrictions on the shape of the diamonds used, improving productivity while ensuring the formation of a heat flow path (lateral route) between adjacent diamonds.
[0031] From the viewpoint of facilitating the arrangement of diamonds at a higher density, the diamond is preferably a truncated octahedron or a hexahedron.
[0032] <Embodiment 2> Fig. 4 is a schematic diagram of a thermal conductor 110 according to the present invention. The thermal conductor 110 shown in Fig. 4 comprises a thermally conductive member 50 having a flat surface 50X, and a diamond-containing metal layer 20 disposed on one surface of the flat surface 50X. The diamond-containing metal layer 20 has the same configuration as the diamond-containing metal layer 20 of the thermal conductor 100, and is disposed so that the end 40B of the diamond 40 is the end of the diamond 40 on the flat surface 50X side. In other words, the multiple diamonds 40 are arranged in a single layer with their edges facing the flat surface 50X side.
[0033] The heat conductive member 50 is a member made of a thermally conductive material and has a flat portion 50X having a surface parallel to the surface 20B of the diamond-containing metal layer 20. In the heat conductor 110, the heat conductive member 50 is a plate-like member consisting of the flat portion 50X, but the shape of the heat conductive member 50 is not particularly limited. The heat conductive member 50 has a flat portion and a wall portion for surrounding a heat source, and may be a box-shaped frame (see FIG. 6) with one side open. When the heat conductive member is a box-shaped frame, the diamond-containing metal layer may be provided on either the side of the flat portion opposite the heat source side or the side of the flat portion facing the heat source.
[0034] The diamond-containing metal layer 20 and the heat conductive member 50 are bonded and thermally connected. This bonding may be achieved by using a thermally conductive adhesive such as thermally conductive grease or a heat dissipation gap filler to bond the diamond-containing metal layer 20 to the flat surface 50X of the heat conductive member 50, or by forming the diamond-containing metal layer 20 directly on the flat surface 50X of the heat conductive member 50.
[0035] (Production Example 2-1) As a method using a thermally conductive adhesive, for example, a method can be mentioned in which diamond-containing metal layer 20 is obtained in the same manner as in Production Example 1, and then flat portion 50X of thermally conductive member 50 and surface 20B (surface on the substrate 44 side) of diamond-containing metal layer 20 are superimposed and bonded together via a thermally conductive adhesive.
[0036] (Production Example 2-2) A method for directly forming the diamond-containing metal layer 20 on the flat surface 50X of the heat conductive member 50 includes, for example, using the heat conductive member 50 as the substrate 44 and carrying out the filling and plating process of diamond 40 in Production Example 1.
[0037] Furthermore, in the heat conductor 110, the diamond-containing metal layer 20 is disposed on the flat surface 50X of the heat conductive member 50 so that the end of the diamond 40 on the flat surface 50X side becomes the end 40B, but this is not limited thereto. The heat conductor of the present invention may also be configured so that the diamond-containing metal layer 20 is disposed on the flat surface 50X of the heat conductive member 50 so that the end of the diamond 40 on the opposite side to the flat surface 50X side becomes the end 40B. A heat conductor of this structure can be obtained by bonding the flat surface 50X and the other surface 20S of the diamond-containing metal layer 20 with an adhesive, instead of bonding the flat surface 50X and one surface 20B of the diamond-containing metal layer 20 with an adhesive in Production Example 2-1.
[0038] <Embodiment 3> Fig. 5 is a schematic diagram of a heat conductor 120 according to the present invention. The heat conductor 120 shown in Fig. 5 comprises a diamond-containing metal layer 21, a heat conductive member 50 having a flat surface 50X disposed on the diamond-containing metal layer 21, and a diamond-containing metal layer 22 disposed on the flat surface 50X of the heat conductive member 50. The diamond-containing metal layers 21 and 22 have the same configuration as the diamond-containing metal layer 20 of the heat conductor 100, and the diamond-containing metal layer 21 is disposed so that the end of the diamond-containing layer 21 on the flat surface 50X side of the diamond 40 corresponds to the end 40B of the diamond-containing metal layer 20, and the diamond-containing metal layer 22 is disposed so that the end of the diamond-containing metal layer 22 opposite to the flat surface 50X side of the diamond 40 corresponds to the end 40B of the diamond-containing metal layer 20. The diamond-containing metal layers 21 and 22 are joined to the heat conductive member 50 and thermally connected.
[0039] The method for joining the diamond-containing metal layer 21 and the heat conductive member 50 may be the same as or different from the method for joining the diamond-containing metal layer 22 and the heat conductive member 50. The heat conductor 120 can be manufactured by appropriately selecting the method of Manufacturing Example 1, Manufacturing Example 2-1, Manufacturing Example 2-2, etc. depending on the orientation of the end 40B of the diamond 40, and these manufacturing methods may be combined.
[0040] <Embodiment 4> FIG. 6 is a schematic diagram of a thermal conductor 130 according to the present invention. The thermal conductor 130 shown in FIG. 6 comprises a box-shaped thermally conductive member 52, a plate-shaped thermally conductive member 53, a diamond-containing metal layer 23, a plate-shaped thermally conductive member 54, and a diamond-containing metal layer 24. The thermally conductive member 52 is a member formed from a thermally conductive material and has a flat surface 52X and a wall 52Y for enclosing a heat source, forming a box-shaped frame with one open end. The thermally conductive members 53 and 54 are plate-shaped members formed from a thermally conductive material. The thermally conductive member 53 is disposed on one side of the flat surface 52X of the thermally conductive member 52, and the thermally conductive member 54 is disposed on the other side of the flat surface 52X of the thermally conductive member 52. Diamond-containing metal layer 23 is disposed on the side opposite to flat surface 52X of heat conductive member 53, and diamond-containing metal layer 24 is disposed on the side opposite to flat surface 52X of heat conductive member 54. These members are thermally connected. Diamond-containing metal layers 23, 24 have the same configuration as diamond-containing metal layer 20 of heat conductor 100, and diamond-containing metal layer 23 is disposed so that the end of diamond 40 on the heat conductive member 53 side becomes end 40B of diamond-containing metal layer 20, and diamond-containing metal layer 24 is disposed so that the end of diamond 40 on the heat conductive member 54 side becomes end 40B of diamond-containing metal layer 20.
[0041] (Production Example 4) The thermal conductor 130 can be obtained, for example, by bonding a thermally conductive member 53 having a diamond-containing metal layer 23 formed thereon to one surface of the flat portion 52X of the thermally conductive member 52, and bonding a thermally conductive member 54 having a diamond-containing metal layer 24 formed thereon to the other surface of the flat portion 52X of the thermally conductive member 52. Specifically, first, the thermally conductive member 53 is used as the substrate 44 to obtain the thermally conductive member 53 having the diamond-containing metal layer 23 formed thereon. Separately, the thermally conductive member 54 is used as the substrate 44 to obtain the thermally conductive member 54 having the diamond-containing metal layer 24 formed thereon. Next, one surface of the flat portion 52X of the thermally conductive member 52 is bonded to the thermally conductive member 53, and the other surface of the flat portion 52X of the thermally conductive member 52 is bonded to the thermally conductive member 54 using a thermally conductive adhesive.
[0042] The orientation of the diamond-containing metal layers 21 to 24 is not limited to the above configuration. When the heat conductor of the present invention has a configuration in which diamond-containing metal layers are arranged on both sides of the flat surface of the heat conductive member, the diamond-containing metal layers may each independently have a plurality of diamonds arranged in a single layer with their edge portions facing the flat surface side of the heat conductive member, or may have their edge portions facing the side opposite to the flat surface side.
[0043] <Embodiment 5> The thermal conductor of the present invention can be used as a heat spreader, and can be combined with a heat dissipation member such as a heat sink to form a heat dissipation structure for dissipating heat from a heat source.
[0044] 7 is a schematic diagram of a heat dissipation structure 200 according to the present invention. The heat dissipation structure 200 shown in FIG. 7 includes a heat spreader 10 disposed on a heat source 1, and a heat sink 3 disposed on the heat spreader 10.
[0045] The heat sink 3 is a component comprising a base 30 having a surface 30S facing the heat source 1 and a plurality of heat dissipation fins (not shown) erected on the surface of the base 30 opposite the surface 30S, but the shape of the heat sink is not limited to this. The heat spreader 10 is a component disposed between the heat source 1 and the surface 30S of the base 30 of the heat sink 3. The heat spreader 10 is a thermal conductor of the present invention. By thermally connecting the heat source 1, the heat spreader 10, and the heat sink 3, heat from the heat source 1 can be conducted from the heat spreader 10 to the heat sink 3 and dissipated from the heat sink 3 to the outside.
[0046] For example, the heat dissipation structure 200 can be configured as a heat dissipation structure 200a shown in Figure 8(A), in which the heat spreader 10 is a diamond-containing metal layer 20 (thermal conductor 100) and is bonded to a heat source 1 with an adhesive 5 (thermally conductive adhesive), and a heat sink 3 bonded to the heat spreader 10 with the adhesive 5.
[0047] 8(B), the heat dissipation structure 200 can be a structure in which the heat spreader 10 is a thermal conductor comprising a heat conductive member 50 having a flat portion 50X, a diamond-containing metal layer 20 bonded to one surface of the flat portion 50X of the heat conductive member 50 with an adhesive 5, and a diamond-containing metal layer 20 bonded to the other surface of the flat portion 50X of the heat conductive member 50 with an adhesive 5, and the heat spreader 10 is bonded to a heat source 1 with the adhesive 5, and a heat sink 3 bonded to the heat spreader 10 with the adhesive 5.
[0048] 8(C) and 8(D), the heat dissipation structure 200 may have a configuration in which a diamond-containing metal layer of the thermal conductor of the present invention is formed directly on the heat sink 3. This allows the diamond-containing metal layer to be bonded by electrodeposition.
[0049] The heat dissipation structure 200c shown in Fig. 8(C) has a structure in which the diamond-containing metal layer 20, which is bonded to the heat source 1 with an adhesive 5, is formed directly on the heat sink 3. In this case, the diamond-containing metal layer 20 is the heat spreader 10. In the heat dissipation structure 200c, the heat sink 3 is used as the substrate 44, and after the diamond-containing metal layer 20 is formed directly on the surface 30S of the heat sink 3, the heat sink 3 and the diamond-containing metal layer 20 are used without being separated.
[0050] The heat dissipation structure 200d shown in FIG. 8(D) is a structure including a heat sink 3, a diamond-containing metal layer 20 formed directly on the heat sink 3, a heat conductive member 50 bonded to the diamond-containing metal layer 20 with an adhesive 5, and a diamond-containing metal layer 20 formed directly on the heat conductive member 50, and the diamond-containing metal layer 20 formed directly on the heat conductive member 50 is bonded to the heat source 1 with the adhesive 5. In this case, the laminated portion of the diamond-containing metal layer 20, the heat conductive member 50, and the diamond-containing metal layer 20 forms the heat spreader 10. The heat dissipation structure 200d can be obtained by the following method. First, using the heat sink 3 as the substrate 44, diamonds are arranged with their edges facing the surface 30S of the heat sink 3, and plated to form the diamond-containing metal layer 20. Separately, diamonds are arranged with their edges facing one surface of the flat portion 50X of the heat conductive member 50, and plated to form the diamond-containing metal layer 20. Then, the diamond-containing metal layer 20 formed on the heat sink 3 and the heat conductive member 50 are bonded together with an adhesive 5 .
[0051] <Embodiment 6> The heat dissipation structure of the present invention can be incorporated into electronic devices, etc. Fig. 9 shows an example in which a heat dissipation structure 210 is incorporated as a heat dissipation structure for a CPU die.
[0052] The heat dissipation structure 210 shown in FIG. 9 includes a heat conductor 140, which is a heat spreader, and a heat sink 3. The heat conductor 140 includes a copper plate 70 on which a diamond-containing metal layer 25 is formed, and a box-shaped heat-conducting member 52. The diamond-containing metal layer 25 includes a plurality of diamonds 48 arranged in a single layer and a metal 42 that secures the diamonds 48. The diamonds 48 are polyhedrons with octahedrons or higher and are in face-to-face contact with adjacent diamonds 48. The diamonds 48 are arranged so that the ends 48B of the diamonds 48 on one side of the diamond-containing metal layer 25 (the copper plate 70 side) form vertices or ridges. The copper plate 70 on which the diamond-containing metal layer 25 is formed is bonded to both sides of a flat surface 52X of the heat-conducting member 52 via a thermally conductive adhesive 5. The heat sink 3 is bonded to the diamond-containing metal layer 25 located outside the flat surface 52X of the heat-conducting member 52 with the adhesive 5.
[0053] When used as a heat dissipation structure for a CPU die 1a, the heat dissipation structure 210 is placed on a package substrate 7 so that the wall portion 52Y of the thermally conductive member 52 surrounds the CPU die 1a, and the thermal conductor 140 and the CPU die 1a are bonded together with an adhesive 5. [Industrial Applicability]
[0054] INDUSTRIAL APPLICABILITY The present invention can be used in the field of electronic devices and the like as a thermal conductor for effectively dissipating heat, for example, used in heat sinks, heat spreaders, etc., and is therefore industrially useful. [Explanation of symbols]
[0055] 1 Heat source 1a CPU die 3 Heatsink 5. Adhesive 7 Package substrate 10 Heat spreader 20, 21, 22, 23, 24, 25 Diamond-containing metal layer 20S, 20B, 30S, B1 side 30 Base 40, 46, 48 Diamond 40B, 48B end 42 metal 44 PCB 50, 52, 53, 54 Thermally conductive member 50X, 52X flat section 52Y wall 70 Copper plate 100, 110, 120, 130, 140 Thermal Conductor 200, 200a, 200b, 200c, 200d, 210 Heat dissipation structure
Claims
1. A heat conductor having a diamond-containing metal layer including a plurality of diamonds arranged in a layer and a metal for fixing the diamonds, The diamond is an octahedron or higher polyhedron, and adjacent diamonds are in face contact with each other, A heat conductor, wherein the diamond is arranged so that an end of the diamond on one surface side of the diamond-containing metal layer forms a vertex or a ridge line.
2. 2. The heat conductor according to claim 1, wherein the volume fraction of the diamond in the diamond-containing metal layer is 50% or more.
3. 2. The thermal conductor of claim 1, wherein the diamond is a truncated octahedron or a hexa-octahedron.
4. a thermally conductive member having a flat portion; 2. The heat conductor according to claim 1, further comprising: the diamond-containing metal layer disposed on at least one surface side of the flat portion.
5. A heat spreader comprising the thermal conductor according to any one of claims 1 to 4.
6. The heat spreader of claim 5 , which is disposed on and thermally bonded to a heat source; a heat sink disposed on and thermally bonded to the heat spreader.
Citation Information
Patent Citations
Nickel diamond composite and method for manufacturing the same
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