Light-emitting device manufacturing method

JP2025159146A5Pending Publication Date: 2025-11-28NICHIA CORP
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Patent Information

Application Number
JP2025135908
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-08-18
Publication Date
2025-11-28

AI Technical Summary

Technical Problem

Existing light-emitting devices for vehicle lighting fixtures do not effectively achieve a high brightness region on the light-emitting surface without complex optical designs.

Method used

A light-emitting device design featuring a light source with a translucent member and a covering member, where the center of the light source is closer to one side of the translucent member than its opposite side, and the length from one side of the light source to the translucent member is at least ¼ of the length from one side of the translucent member to its opposite side, creating distinct high and low brightness regions on the emitting surface.

Benefits of technology

The design allows for a high-brightness region on the light-emitting surface, simplifying optical designs and enabling compact, efficient vehicle headlights with controlled light distribution.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a light-emitting device that has a high-luminance region partially on a light-emitting surface.SOLUTION: A light-emitting device 100 includes a light source 5 which includes a light-emitting element 10, a translucent member 30 which is so arranged as to have a second surface 30b opposed to the top surface 5a of the light source 5, and a covering member 40 which covers side faces of the translucent member 30 and side faces of the light source 5. The center of the top surface 5a of the light source 5 in top view is located closer to a second side face 30d of the translucent member 30 than the center of a first face 30a of the translucent member 30, and the length from a first side face 5c of the light source 5 to a first side face 30c of the translucent member 30 is 1 / 4 or more as long as the length of the first side face 30c of the translucent member 30 to the second side face 30d of the translucent member 30.SELECTED DRAWING: Figure 1C
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Description

[Technical Field]

[0001] The present disclosure relates to a light emitting device. [Background technology]

[0002] In recent years, LEDs have been used as light sources for vehicle lighting fixtures such as headlights. For example, Patent Document 1 discloses a light-emitting device including a light-emitting element, a phosphor plate placed on the upper surface of the light-emitting element, a sealing resin arranged so that the upper surface of the phosphor plate is exposed, and a diffusing resin covering the upper surface of the phosphor plate and the upper surface of the resin body. Furthermore, Patent Document 2 discloses a light-emitting device including a light-emitting element, a wavelength conversion member bonded to the upper surface of the light-emitting element, a translucent member having an area larger than the upper surface of the light-emitting element and arranged on the upper surface of the wavelength conversion member, a translucent side light-guiding member, and light-reflecting members arranged on at least each side surface of the wavelength conversion member, the translucent member, and the side light-guiding member. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-239140 [Patent Document 2] Japanese Patent Application Publication No. 2016-072515 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a light emitting device having a high brightness region partially on the light emitting surface. [Means for solving the problem]

[0005] a light-emitting device according to an embodiment of the present disclosure, comprising: a light source including a light-emitting element and having a light-emitting surface on an upper surface thereof; a translucent member having a first surface and a second surface located opposite the first surface, the second surface being arranged so that the second surface faces the upper surface of the light source; and a covering member exposing the first surface of the translucent member and covering a side surface of the translucent member and a side surface of the light source, wherein the side surface of the light source has a first side surface continuous with the upper surface and a second side surface located opposite the first side surface, the side surface of the translucent member has a first side surface located on the same side as the first side surface of the light source and a second side surface located opposite the first side surface, wherein, in a top view, the center of the upper surface of the light source is located closer to the second side surface of the translucent member than the center of the first surface of the translucent member, and the length from the first side surface of the light source to the first side surface of the translucent member is at least ¼ of the length from the first side surface of the translucent member to the second side surface of the translucent member. [Effects of the Invention]

[0006] According to an embodiment of the present disclosure, a light emitting device having a partially high brightness region on the light emitting surface can be provided. [Brief explanation of the drawings]

[0007] [Figure 1A] 1 is a perspective view schematically showing a light emitting device according to a first embodiment. [Figure 1B] FIG. 1 is a top view schematically showing a light emitting device according to a first embodiment. [Figure 1C] 1C is a cross-sectional view schematically showing a cross section taken along line IC-IC in FIG. 1B. [Figure 1D] FIG. 2 is a bottom view schematically showing the light emitting device according to the first embodiment. [Figure 2] 2 is a cross-sectional view schematically showing the optical path from the light source of the light emitting device according to the first embodiment. FIG. [Figure 3] 3 is a flowchart of a method for manufacturing the light emitting device according to the first embodiment. [Figure 4A] 2A to 2C are top views schematically showing a method for manufacturing the light emitting device according to the first embodiment. [Figure 4B]2A to 2C are top views schematically showing a method for manufacturing the light emitting device according to the first embodiment. [Figure 4C] 2A to 2C are cross-sectional views schematically illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4D] 2A to 2C are cross-sectional views schematically illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4E] 2A to 2C are cross-sectional views schematically illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4F] 2A to 2C are cross-sectional views schematically illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 5A] FIG. 10 is a top view schematically showing a light emitting device according to a second embodiment. [Figure 5B] FIG. 5B is a cross-sectional view schematically showing a cross section taken along line VB-VB in FIG. 5A. [Figure 6] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a third embodiment. [Figure 7] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a fourth embodiment. [Figure 8] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a fifth embodiment. [Figure 9] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a sixth embodiment. [Figure 10] FIG. 13 is a cross-sectional view schematically showing a light emitting device according to a seventh embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] The embodiments will be described below with reference to the drawings. However, the following embodiments are illustrative of a light-emitting device and a method for manufacturing a light-emitting device that embody the technical concept of the present embodiments, and are not limited thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, and relative positions of the components described in the embodiments are merely illustrative and do not limit the scope of the present invention. The sizes and positional relationships of components shown in each drawing may be exaggerated or simplified for clarity. To avoid overly complex drawings, some elements may be omitted, or end views showing only the cut surface may be used as cross-sectional views. Furthermore, "covering" does not necessarily mean direct contact, but also includes indirect covering, for example, via another component. Furthermore, "disposing" does not necessarily mean direct contact, but also includes indirect disposing, for example, via another component. In this specification, "top view" means observing from the top side, which is the light-emitting surface of the light-emitting device.

[0009] First Embodiment [Light-emitting device] FIG. 1A is a perspective view schematically showing a light emitting device according to a first embodiment. FIG. 1B is a top view schematically showing the light emitting device according to the first embodiment. FIG. 1C is a cross-sectional view schematically showing a cross section taken along line IC-IC in FIG. 1B. FIG. 1D is a bottom view schematically showing the light emitting device according to the first embodiment. FIG. 2 is a cross-sectional view schematically showing an optical path from a light source of the light emitting device according to the first embodiment.

[0010] The light emitting device 100 includes a light source 5 including a light emitting element 10 and having a light emitting surface on an upper surface 5a, a light-transmitting member 30 having a first surface 30a and a second surface 30b located opposite the first surface 30a and arranged so that the second surface 30b faces the upper surface 5a of the light source 5, and a covering member 40 exposing the first surface 30a of the light-transmitting member 30 and covering the side surfaces of the light source 5 and the light source 5. The side surfaces of the light source 5 include a first side surface 5c continuing to the upper surface 5a and a second side surface 5d located opposite the first side surface 5c, and the side surfaces of the light-transmitting member 30 include the first side surface 30c located on the same side as the first side surface 5c of the light source 5 and the second side surface 30d located opposite the first side surface 30c. When viewed from above, the center C1 of the upper surface 5a of the light source 5 is located closer to the second side surface 30d of the light-transmitting member 30 than the center C2 of the first surface 30a of the light-transmitting member 30, and the length L1 from the first side surface 5c of the light source 5 to the first side surface 30c of the light-transmitting member 30 is at least 1 / 4 of the length L2 from the first side surface 30c of the light-transmitting member 30 to the second side surface 30d of the light-transmitting member 30.

[0011] The light emitting device 100 will be described as further including a wiring board 50 on which the light source 5 is arranged, and an electronic component 60 arranged on the wiring board 50 at a distance from the light source 5, as an example. Each component of the light emitting device 100 will be described below.

[0012] (light source) The light source 5 includes a light-emitting element 10. The light source 5 may use only the light-emitting element 10. Alternatively, the light source 5 may include other components such as a wavelength conversion member 20 on the light-emitting element 10. In this embodiment, the light source 5 includes the light-emitting element 10 and the wavelength conversion member 20. The upper surface of the wavelength conversion member 20 is referred to as a first upper surface 20a, the lower surface of the wavelength conversion member 20 is referred to as a first lower surface 20b, the upper surface of the light-emitting element 10 is referred to as a second upper surface 10a, and the lower surface of the light-emitting element 10 is referred to as a second lower surface 10b. Here, the first upper surface 20a of the wavelength conversion member 20 constitutes the upper surface 5a of the light source 5, and the second lower surface 10b of the light-emitting element 10 constitutes the lower surface 5b of the light source 5. The first side surface 20c of the wavelength conversion member 20 constitutes the first side surface 5c of the light source 5, and the second side surface 20d of the wavelength conversion member 20 constitutes the second side surface 5d of the light source 5. The side surface of the light-emitting element 10 also constitutes part of the side surface of the light source 5. The light source 5 can have various shapes when viewed from above, such as a circle, an ellipse, a polygon such as a square or a hexagon. Among these, a rectangular shape when viewed from above is preferable. Here, as an example, the light source 5 has a rectangular shape when viewed from above.

[0013] [Light-emitting element] The light emitting element 10 has a second upper surface 10a, a second lower surface 10b located on the opposite side of the second upper surface 10a, and side surfaces continuing to the second upper surface 10a and the second lower surface 10b. The light emitting element 10 can be a light emitting diode. The light emitting element 10 includes a semiconductor structure and at least a pair of positive and negative device electrodes. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer sandwiched between the n-side semiconductor layer and the p-side semiconductor layer. The active layer may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The semiconductor structure includes multiple semiconductor layers made of nitride semiconductors. The nitride semiconductors include In x Al y Ga 1-x-yThis includes semiconductors of all compositions in which the composition ratios x and y in the chemical formula N (0≦x, 0≦y, x+y≦1) are varied within the respective ranges. The emission peak wavelength of the active layer can be appropriately selected depending on the purpose. The active layer is configured to be able to emit, for example, visible light or ultraviolet light.

[0014] The semiconductor structure may include multiple light-emitting sections, each including an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. When the semiconductor structure includes multiple light-emitting sections, each light-emitting section may include well layers with different emission peak wavelengths or well layers with the same emission peak wavelength. The same emission peak wavelength also includes cases where the emission peak wavelengths vary by a few nanometers. The combination of emission peak wavelengths of the multiple light-emitting sections can be appropriately selected. For example, when the semiconductor structure includes two light-emitting sections, the combination of light emitted by each light-emitting section may be blue light with blue light, green light with green light, red light with red light, ultraviolet light with ultraviolet light, blue light with green light, blue light with red light, or green light with red light. For example, when the semiconductor structure includes three light-emitting sections, the combination of light emitted by each light-emitting section may be blue light, green light, and red light. Each light-emitting section may include one or more well layers with emission peak wavelengths different from those of the other well layers. The shape, size, etc. of the light emitting element 10 can be selected arbitrarily. The light-emitting element 10 may include a support substrate that supports the semiconductor laminate. Examples of the support substrate include insulating substrates such as sapphire and spinel (MgAl2O4), and nitride-based semiconductor substrates such as InN, AlN, GaN, InGaN, AlGaN, and InGaAlN. In order to extract light emitted from the light-emitting portion through the support substrate, it is preferable to use a light-transmitting material for the support substrate. When the light-emitting element 10 includes a support substrate, the light-emitting element 10 may include multiple semiconductor structures on the support substrate.

[0015] At least one pair of positive and negative element electrodes may be arranged on the same surface of the semiconductor laminate, or on different surfaces. A light-emitting element 10 having a desired electrode arrangement can be appropriately selected depending on the configuration of the wiring substrate 50 used in the light-emitting device 100. The light-emitting element 10 can be arranged on the upper surface wiring 2 of the wiring substrate 50 via a conductive member 8, for example. The conductive member 8 can be eutectic solder, a conductive paste such as a metal, a bump, or the like. The element electrodes of the light-emitting element 10 and the upper surface wiring 2 may be directly bonded to each other without the conductive member 8.

[0016] [Wavelength conversion material] In the light emitting device 100, the light source 5 includes a wavelength conversion member 20 disposed on the second upper surface 10a of the light emitting element 10. Here, as an example, the wavelength conversion member 20 has a rectangular shape in a top view. The wavelength conversion member 20 has a first upper surface 20a constituting the upper surface 5a of the light source 5, a first lower surface 20b located on the opposite side of the first upper surface 20a, and side surfaces continuous with the first upper surface 20a and the first lower surface 20b. The first lower surface 20b may be a surface substantially parallel to the first upper surface 20a, and may have a recess 25 recessed toward the light emitting element 10. Here, the first lower surface 20b has the recess 25, and a part of the light emitting element 10 is disposed within the recess 25. The side surface of the recess 25 may or may not be in contact with a part of the side surface of the light emitting element 10. The recess 25 is formed by embedding a part of the light emitting element 10 in the wavelength conversion member 20 during the manufacturing process. When the wavelength conversion member 20 has a recess 25, the first lower surface 20b of the wavelength conversion member 20 includes the bottom surface and side surfaces of the recess 25 that define the recess 25. By disposing a part of the light emitting element 10 in the recess 25 of the wavelength conversion member 20, it is possible to reduce the thickness of the light source 5 including the light emitting element 10 and the wavelength conversion member 20 in the wavelength conversion member 20. This reduces the light emitted laterally from the light source 5, improving the light extraction efficiency from the top surface.

[0017] The first lower surface 20b of the wavelength conversion member 20 has a larger area than the second upper surface 10a of the light emitting element 10. Specifically, the wavelength conversion member 20 has a size such that the outer edge of the wavelength conversion member 20 is positioned outside the outer edge of the light emitting element 10 in a top view. The side surface of the wavelength conversion member 20 may be any of a surface perpendicular to the first upper surface 20a and / or the first lower surface 20b, an inclined surface, a curved surface, etc., and may include a partially perpendicular region, an inclined region, or a curved region.

[0018] The thickness T1 of the wavelength conversion member 20 is preferably 30 μm or more from the viewpoint of improving the wavelength conversion efficiency and mechanical strength, and is preferably 100 μm or less from the viewpoint of miniaturizing the light emitting device 100. The thickness of the wavelength conversion member 20 is the length in the direction from the first lower surface 20b of the wavelength conversion member 20 toward the first upper surface 20a of the wavelength conversion member 20. In addition, when the wavelength conversion member 20 has recesses 25, the thickness of the wavelength conversion member 20 is the thickness at a portion where the recesses 25 are not formed.

[0019] From the viewpoint of adhesion to the light emitting element 10, the depth D1 of the recess 25 of the wavelength conversion member 20 is preferably ⅕ or more of the thickness of the light emitting element 10. Furthermore, from the viewpoint of wavelength conversion efficiency, the thickness from the bottom of the recess 25 to the first upper surface 20a (i.e., the difference between T1 and D1) is preferably 20 μm or more.

[0020] As an example, the wavelength conversion member 20 contains a phosphor that converts the wavelength of the first light emitted from the light emitting element 10 into the second light. The emission peak wavelength of the first light is, for example, 420 nm or more and 460 nm or less. The emission peak wavelength of the second light is, for example, 500 nm or more and 600 nm or less. The phosphor concentration of the wavelength conversion member 20 is preferably, for example, 25 mass % or more and 70 mass % or less. The phosphor concentration indicates the proportion of the phosphor in the wavelength conversion member 20 that contains the phosphor.

[0021] Examples of the wavelength conversion member 20 include a sintered body of a phosphor, and a material in which phosphor powder is contained in a light-transmitting resin, glass, ceramics, etc. Examples of the light-transmitting resin that can be used include a resin containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, phenol resin, and polyimide resin.

[0022] The phosphor is an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSiO 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 oxynitride phosphors such as (La,Y)3Si6N 11 :Ce), BSESN phosphors (for example, (Ba,Sr)2Si5N8:Eu), SLA phosphors (for example, SrLiAl3N4:Eu), CASN phosphors (for example, CaAlSiN3:Eu) or SCASN phosphors (for example, (Sr,Ca)AlSiN3:Eu), nitride phosphors such as KSF phosphors (for example, K2SiF6:Mn), KSAF phosphors (for example, K2(Si 1-x Al x )F 6-x:Mn where x satisfies 0 < x < 1), or a fluoride phosphor such as an MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), a quantum dot having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), a II-VI group quantum dot (e.g., CdSe), a III-V group quantum dot (e.g., InP), or a quantum dot having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used.

[0023] (Light-transmissive member) The light-emitting device 100 includes a light-transmissive member 30. The light-transmissive member 30 has a first surface 30a and a second surface 30b located on the opposite side of the first surface. The first surface 30a of the light-transmissive member 30 can be the light-emitting surface of the light-emitting device 100. In the light-emitting device 100, the light-transmissive member 30 is arranged such that the second surface 30b faces the upper surface 5a of the light source 5. The light-transmissive member 30 can have various shapes such as a polygon such as a circle, an ellipse, a square, or a hexagon in a top view. Among them, a rectangle such as a square or a rectangle is preferable. Here, as an example, the light-transmissive member 30 has a rectangular shape in a top view. The light-transmissive member 30 has side surfaces connecting the first surface 30a and the second surface 30b. The side surfaces of the light-transmissive member 30 have a first side surface 30c located on the same side as the first side surface 5c of the light source 5 and a second side surface 30d located on the opposite side of the first side surface 30c. The second surface 30b of the light-transmissive member 30 has an area larger than the first upper surface 20a of the wavelength conversion member 20. That is, the outer edge of the light-transmissive member 30 is arranged to be located outside the outer edge of the wavelength conversion member 20 in a top view. The side surfaces of the light-transmissive member 30 can be any of a surface perpendicular to the upper and / or lower surfaces, an inclined surface, a curved surface, etc. Note that the light-transmissive member 30 may have a concavo-convex structure on a part or all of its surface.

[0024] The thickness of the light-transmitting member 30 is preferably 30 μm or more from the viewpoint of improving mechanical strength, and is preferably 300 μm or less from the viewpoint of miniaturizing the light-emitting device 100, and more preferably 100 μm to 200 μm.

[0025] The light-transmitting member 30 may be a plate-shaped member made of a light-transmitting material such as resin, glass, or inorganic material. Examples of glass that can be used include borosilicate glass and quartz glass, and examples of resins that can be used include silicone resin, epoxy resin, and acrylic resin. Considering its resistance to light degradation and mechanical strength, glass is preferred as the light-transmitting member. The light-transmitting member 30 may contain a light-diffusing material. By incorporating a light-diffusing material into the light-transmitting member 30, uneven chromaticity and uneven brightness can be suppressed. Examples of light-diffusing materials that can be used include titanium oxide, barium titanate, aluminum oxide, and silicon oxide.

[0026] The side surface of the light source 5 has a first side surface 5c continuing to the upper surface 5a of the light source 5 and a second side surface 5d located on the opposite side of the first side surface 5c. The side surface of the light-transmissive member 30 has a first side surface 30c located on the same side as the first side surface 5c of the light source 5 and a second side surface 30d located on the opposite side of the first side surface 30c.

[0027] In the light emitting device 100, in a top view, the center C1 of the upper surface 5a of the light source 5 is located closer to the second side surface 30d of the light-transmissive member 30 than the center C2 of the first surface 30a of the light-transmissive member 30. In addition, in a top view of the light emitting device 100, a length L1 from the first side surface 5c of the light source 5 to the first side surface 30c of the light-transmissive member 30 is equal to or greater than one-fourth of a length L2 from the first side surface 30c of the light-transmissive member 30 to the second side surface 30d of the light-transmissive member 30. Here, the length L1 is the shortest distance from the first side surface 5c of the light source 5 to the first side surface 30c of the light-transmissive member 30 in a top view, and the length L2 is the shortest distance from the first side surface 30c of the light-transmissive member 30 to the second side surface 30d of the light-transmissive member 30 in a top view. That is, in top view, the area of ​​the light-transmitting member 30 from a line tangent to the first side surface 5c of the light source 5 (i.e., line B2 in FIG. 1B) to the first side surface 30c of the light-transmitting member 30 is larger than the area from a line tangent to the second side surface 5d of the light source 5 (i.e., line B1 in FIG. 1B) to the second side surface 30d of the light-transmitting member 30. As a result, the light-transmitting member 30 has a first region 31 on the first side surface 30c side of the light-transmitting member 30 as a region that does not overlap with the light source 5 in top view. The first region 31 has an area larger than the region on the second side surface 30d side of the light-transmitting member 30 that does not overlap with the light source 5 in top view. In FIG. 1B, the first region 31 is the region from line B2 tangent to the first side surface 20c of the wavelength conversion member 20 to the first side surface 30c of the light-transmitting member 30. In the light emitting device 100, the second side surface 30d of the light-transmissive member 30 and the second side surface 5d of the light source 5 may coincide with each other in a top view.

[0028] In the light-emitting device 100, the light-transmitting member 30 has the first region 31. When the first surface 30a of the light-transmitting member 30 is used as the light-emitting surface of the light-emitting device 100, the first region 31 on the light-emitting surface of the light-emitting device 100 can be made lower in luminance than a region of the light-emitting surface that overlaps with the light source 5 in a top view (hereinafter referred to as the second region 32). Because the light-emitting element 10 is disposed below the second region 32, light emitted from the second region 32 has higher luminance than light emitted from the first region 31. This allows the light-emitting device 100 to have the first region 31 and the second region 32 with different luminances on the light-emitting surface. Therefore, for example, when the light-emitting device 100 is used in an automotive headlight, it is possible to provide a high-luminance region in a desired area of ​​the illumination region. In other words, it is easy to achieve a desired light distribution without using complex optical designs such as reflectors and lenses, which enables headlights to be made more compact and improves the design of headlights.

[0029] The length L1 from the first side surface 5c of the light source 5 to the first side surface 30c of the light-transmitting member 30 is preferably at least ¼, and more preferably at least about ⅓, of the length L2 from the first side surface 30c of the light-transmitting member 30 to the second side surface 30d of the light-transmitting member 30. This makes it possible to arrange the first region 31 and the second region 32 that emits light with higher brightness than the light emitted from the first region 31 on the light-emitting surface. Note that, from the viewpoint of miniaturization of the light-emitting device 100, the length L1 from the first side surface 5c of the light source 5 to the first side surface 30c of the light-transmitting member 30 is preferably at most ¾, and more preferably at most about ⅔, of the length L2 from the first side surface 30c of the light-transmitting member 30 to the second side surface 30d of the light-transmitting member 30.

[0030] The length L3 from the third side surface 5e of the light source 5 to the fourth side surface 5f of the light source 5 can be 80% or more and 100% or less of the length L4 from the third side surface 30e of the light-transmissive member 30 to the fourth side surface 30f of the light-transmissive member 30. Here, the length L3 is the shortest distance from the third side surface 5e of the light source 5 to the fourth side surface 5f of the light source 5 in a top view, and the length L4 is the shortest distance from the third side surface 30e of the light-transmissive member 30 to the fourth side surface 30f of the light-transmissive member 30 in a top view. Note that the length L3 from the third side surface 5e of the light source 5 to the fourth side surface 5f of the light source 5 can be set appropriately according to a desired light distribution. As an example, the light emitting device 100 can be used as a low-beam light source for a vehicle headlight. In this case, the light emitting device 100 is arranged so that light emitted from the second region 32 (i.e., the high-brightness region) illuminates the upper side of the headlight's light distribution pattern in the vertical direction, and light emitted from the first region 31 (i.e., the low-brightness region) illuminates the lower side of the headlight's light distribution pattern in the vertical direction. This reduces the possibility that the road surface near the vehicle in the low-beam headlight illumination region is illuminated more brightly than necessary, thereby reducing the occurrence of glare due to road surface reflection. In this case, for example, by making the planar shape of the light source 5 a rectangle with the above-mentioned length L3 as the long side, it is possible to more brightly illuminate the left and right directions of the headlight's light distribution pattern.

[0031] (wiring board) In the light emitting device 100, the light emitting element 10 can be disposed on a wiring board 50. The wiring board 50 includes a base material 51 and a plurality of wirings 52 that function as electrodes of the light emitting device 100.

[0032] The substrate 51 can be made of a material known in the art as a substrate for forming a wiring board for supporting electronic components such as light-emitting elements. Examples include insulating materials such as glass epoxy, resin, and ceramics, semiconductor materials such as silicon, and conductive materials such as copper. Among these, ceramics with high heat resistance and light resistance are preferably used. Examples of ceramics include aluminum oxide, aluminum nitride, silicon nitride, and LTCC. Composite materials of these insulating, semiconductor, and conductive materials can also be used. When a semiconductor or conductive material is used as the substrate 51, the wiring 52 can be arranged on the upper and lower surfaces of the substrate 51 via an insulating layer.

[0033] The wiring 52 includes at least upper wiring 2 disposed on the upper surface of the substrate and connected to the light emitting element 10. Here, the wiring further includes lower wiring 3 (e.g., anode terminal 301 and cathode terminal 302) which are external connection terminals electrically connected to an external power supply and disposed on the lower surface opposite the upper surface, and inner layer wiring which electrically connects the upper wiring 2 and the lower wiring 3. The inner layer wiring includes, for example, vias 4 which penetrate the base material 51. Note that the wiring substrate 50 may also include side wiring disposed on the side surface as wiring which electrically connects the upper wiring 2 and the lower wiring 3. Examples of materials for the wiring 52 include metals such as Fe, Cu, Ni, Al, Ag, Au, Pt, Ti, W, and Pd, and alloys containing at least one of these metals.

[0034] (electronic parts) The electronic component 60 is, for example, a protective element. The protective element is, for example, a Zener diode. The electronic component 60 is, for example, disposed on the upper surface wiring 2 of the wiring substrate 50 by a conductive member 8. Note that the light emitting device 100 does not necessarily have to include the electronic component 60.

[0035] (Covering material) The light emitting device 100 can include a covering member 40 that covers the light source 5 and the light-transmitting member 30 . The covering member 40 exposes the first surface 30a of the light-transmitting member 30 and covers the side surfaces of the light source 5 and the light source 5. When the light-emitting device 100 includes an electronic component 60, the covering member 40 preferably covers the electronic component 60. Furthermore, when the light-emitting element 10 is disposed on a wiring board 50, the covering member 40 preferably covers the upper surface wiring 2 of the wiring board 50.

[0036] The covering member 40 preferably has light-blocking properties, specifically, light-reflecting properties. Furthermore, the covering member 40 is preferably made of an insulating material. Examples of materials that can be used for the covering member 40 include thermosetting resins and thermoplastic resins. Specifically, the covering member 40 can be made of a resin containing particles of a light-reflecting substance. Examples of resins include resins or hybrid resins containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, phenolic resin, bismaleimide triazine resin, and polyphthalamide resin. Among these, resins containing silicone resin as a base polymer are preferred, as they have excellent heat resistance, electrical insulation, and flexibility. Examples of light-reflecting materials include titanium oxide, silicon oxide, zirconium oxide, aluminum oxide, magnesium oxide, calcium carbonate, calcium hydroxide, calcium silicate, zinc oxide, barium titanate, potassium titanate, aluminum nitride, boron nitride, mullite, and combinations thereof. Titanium oxide is particularly preferred because it is relatively stable against moisture and has a high refractive index.

[0037] The concentration of the light-reflecting material in the covering member 40 is preferably, for example, 60% by mass or more and 70% by mass or less. The concentration of the light-reflecting material indicates the proportion of the light-reflecting material in the covering member 40 that contains the light-reflecting material. The reflectance of the covering member 40 is preferably, for example, 1% or more and 95% or less. The reflectance means the reflectance at the emission peak wavelength of the light emitted from the light emitting element 10.

[0038] The total light transmittance of the covering member 40 is preferably, for example, 1% or more and 35% or less. The total light transmittance is the ratio of the amount of light that passes through a target object to the amount of light that enters the target object. For example, the total light transmittance refers to the total light transmittance measured in accordance with Japanese Industrial Standard JIS K 7375:2008.

[0039] [Light-emitting device operation] When power is supplied to the light-emitting device 100 from an external power source, the light-emitting element 10 emits light. At least a portion of the first light emitted from the light-emitting element 10 is wavelength-converted to second light by the phosphor contained in the wavelength conversion member 20. The second light is mixed with the first light that has not been wavelength-converted to the second light. The mixed light is emitted to the outside as, for example, white light. In this case, as described above, the light-transmitting member 30 has the first region 31. Because the first region 31 does not overlap with the light source 5 in a top view, the amount of light emitted from the first region 31 is less than the amount of light emitted from the second region 32 below which the light-emitting element 10 is disposed. Therefore, the brightness of the second region 32 on the light-emitting surface of the light-emitting device 100 is relatively higher than the brightness of the first region 31. This allows the light-emitting device 100 to have a high-brightness region on its light-emitting surface. In this way, the light-emitting device 100 can have a high-brightness region in the irradiation area of ​​the light emitted from the light-emitting region. The light-emitting region is the light-emitting surface of the light-emitting device 100, and in this case, the light-emitting surface of the light-emitting device 100 is the first surface 30a of the light-transmitting member 30.

[0040] Here, the luminance difference between the first region 31 and the second region 32 on the light-emitting surface of the light-emitting device 100 will be specifically described with reference to Fig. 2. Also, Fig. 1B and Fig. 1C will be referenced as appropriate. Note that Fig. 2 only shows a schematic representation of some of the optical paths to simplify the description. In reality, the traveling direction of light changes as appropriate due to refraction, scattering, etc. between and within each component, but this may be omitted from the illustration for simplification.

[0041] Most of the light Lt emitted from the light source 5 is emitted from the first surface 30a of the light-transmitting member 30 on the wavelength conversion member 20 side. On the other hand, since the first region 31 of the light-transmitting member 30 is far from the light source 5 in top view, the amount of light Lt emitted from the first surface 30a of the light-transmitting member 30 in the first region 31 is less than the light Lt emitted from the second region 32 below which the light emitting element 10 is located. This reduces the amount of light emitted from the first region 31 side. Therefore, the luminance of the first region 31 side of the light-emitting surface of the light-emitting device 100 decreases, and the luminance of the wavelength conversion member 20 side of the light-emitting surface becomes relatively high.

[0042] [Method of manufacturing a light-emitting device] Next, a method for manufacturing the light emitting device 100 will be described. The materials and arrangement of each component are the same as those described above in the description of the light-emitting device 100, and will not be described here as appropriate. The number of light-emitting elements, the size of the light source, and the size of the light-transmitting component are not limited to those shown in the drawings for ease of explanation. Figures 1A to 1D will also be referenced as appropriate.

[0043] Fig. 3 is a flowchart of a method for manufacturing a light emitting device according to the first embodiment. Figs. 4A and 4B are top views schematically showing the method for manufacturing a light emitting device according to the first embodiment. Figs. 4C to 4F are cross-sectional views schematically showing the method for manufacturing a light emitting device according to the first embodiment.

[0044] The method for manufacturing the light emitting device 100 includes the steps of: arranging a light source 5, which includes a light emitting element 10 and has a light-emitting surface on its upper surface 5a, on the second surface 30b of a light-transmitting member 30 having a first surface 30a and a second surface 30b opposite the first surface 30a, such that the upper surface 5a of the light source 5 faces the second surface 30b of the light-transmitting member 30; and arranging a covering member 40 so as to expose the first surface 30a of the light-transmitting member 30 and cover the side surfaces of the light source 5 and the light source 5. The side surface of the light source 5 has a first side surface 5c continuous with the upper surface 5a and a second side surface 5d opposite the first side surface 5c. The side surface of the light-transmitting member 30 has the first side surface 30c located on the same side as the first side surface 5c of the light source 5, and the second side surface 30d opposite the first side surface 30c. Then, in the process of arranging the light source 5, the light source 5 is arranged so that, when viewed from above, the center C1 of the upper surface 5a of the light source 5 is located closer to the second side surface 30d of the light-transmitting member 30 than the center C2 of the first surface 30a of the light-transmitting member 30, and the length L1 from the first side surface 5c of the light source 5 to the first side surface 30c of the light-transmitting member 30 is at least 1 / 4 of the length L2 from the first side surface 30c of the light-transmitting member 30 to the second side surface 30d of the light-transmitting member 30.

[0045] The manufacturing method of the light emitting device 100 may include, in the step of arranging the light source 5, a step of arranging the wavelength conversion member 20 such that the first upper surface 20a of the wavelength conversion member 20, which has a first upper surface 20a and a first lower surface 20b located opposite the first upper surface 20a, faces the second surface 30b of the light-transmitting member 30, which has a first surface 30a and a second surface 30b located opposite the first surface 30a; and a step of bonding the light emitting element 10 and the wavelength conversion member 20 such that the second upper surface 10a of the light emitting element 10, which has a second upper surface 10a and a second lower surface 10b located opposite the second upper surface 10a, faces the first lower surface 20b of the wavelength conversion member 20. Furthermore, the method for manufacturing the light emitting device 100 may include a step of arranging the light emitting element 10 on the wiring substrate 50 before the step of arranging the covering member 40.

[0046] The manufacturing method of the light emitting device 100 is described as including step S11 of arranging a wavelength conversion member, step S12 of arranging a light emitting element, step S13 of arranging a light-transmitting member, and step S14 of arranging a covering member.

[0047] (Step of placing wavelength conversion member) The step S11 of arranging the wavelength conversion member is a step of arranging the wavelength conversion member 20 so that the first upper surface 20a of the wavelength conversion member 20 faces the second surface 30b of the light-transmitting member 30, as shown in Figures 4A and 4B. In step S11 of arranging the wavelength conversion member, first, a plurality of uncured or semi-cured resins constituting the wavelength conversion member 20 are arranged at predetermined intervals on the second surface 300b of the flat-plate-shaped light-transmitting member 300 so as to have a predetermined size and shape. The resin can be arranged by, for example, printing or potting. Next, the light-transmitting member 300 is divided into individual pieces at desired positions, and light-transmitting members 30 each including the wavelength conversion member 20 are obtained. The individual pieces can be obtained by cutting the light-transmitting member 300 with laser irradiation or a tool such as a blade.

[0048] In step S11 of arranging the wavelength conversion member, the position at which the wavelength conversion member 20 is arranged and the position at which the light-transmitting member 300 is divided are appropriately adjusted so that, in a top view, the center of the first upper surface 20a of the wavelength conversion member 20 (i.e., the center C1 of the upper surface 5a of the light source 5) is located closer to the second side surface 30d of the light-transmitting member 30 than the center C2 of the first surface 30a of the light-transmitting member 30, and the length L1 from the first side surface 20c of the wavelength conversion member 20 (i.e., the first side surface 5c of the light source 5) to the first side surface 30c of the light-transmitting member 30 is ¼ or more of the length L2 from the first side surface 30c of the light-transmitting member 30 to the second side surface 30d of the light-transmitting member 30. Here, it has been described that a flat translucent member 300 having a plurality of regions that will become the translucent members 30 after being singulated is prepared, and the wavelength conversion member 20 is placed thereon, and then the member is divided, so that a plurality of translucent members 30 each having the wavelength conversion member 20 placed thereon are prepared at one time; however, the translucent members 30 each having the wavelength conversion member 20 placed thereon may also be prepared individually.

[0049] (Process of arranging light-emitting elements) The step S12 of arranging the light emitting element is a step of arranging the light emitting element 10 on the wiring substrate 50, as shown in FIG. 4C. In step S12 of arranging the light-emitting element, the light-emitting element 10 is arranged on the upper surface wiring 2 via the conductive member 8. Note that the light-emitting element 10 and the upper surface wiring 2 may be directly joined to each other by bonding the element electrode of the light-emitting element 10 to the upper surface wiring 2 without the conductive member 8. Furthermore, if the light-emitting device 100 includes an electronic component 60, in step S12 of arranging the light-emitting element, the electronic component 60 is arranged on the wiring board 50 before or after the light-emitting element 10 is arranged on the wiring board 50. Note that the arrangement of the electronic component 60 may be performed at any time before step S14 of arranging the covering member.

[0050] (Step of placing a light-transmitting member) 4D and 4E, the step S13 of arranging the light-transmitting member is a step of arranging the light-transmitting member 30 so that the second upper surface 10a of the light-emitting element 10 faces the first lower surface 20b of the wavelength conversion member 20. By the step S13 of arranging the light-transmitting member, the light source 5 to which the light-transmitting member 30 is joined is manufactured. In the step S13 of arranging the light-transmitting member, the second upper surface 10a of the light-emitting element 10 may be arranged on the first lower surface 20b of the wavelength conversion member 20 via a light-transmitting adhesive or the like. Alternatively, as in the present embodiment, the light-emitting element 10 may be arranged so that a portion of the light-emitting element 10 is embedded in the first lower surface 20b of the wavelength conversion member 20. When a portion of the light-emitting element 10 is embedded in the first lower surface 20b of the wavelength conversion member 20, the wavelength conversion member 20 preferably contains a resin. When the wavelength conversion member 20 contains a resin, the resin constituting the wavelength conversion member 20 is preferably in an uncured or semi-cured state in the step of arranging the light-transmitting member. The light-emitting element 10 may be embedded by applying pressure from the side of the light-transmitting member 30 to which the wavelength conversion member 20 is bonded, or by applying pressure from the side of the light-emitting element 10. Thereafter, the uncured or semi-cured resin constituting the wavelength conversion member 20 is cured to form the wavelength conversion member 20 having the recess 25.

[0051] By arranging the light emitting element 10 so that a portion of the light emitting element 10 is embedded in the first lower surface 20b of the wavelength conversion member 20, the light emitting element 10 and the wavelength conversion member 20 can be joined together without using an adhesive. In this embodiment, the light-transmitting member is arranged so that, in a top view, the center C1 of the upper surface 5a of the light source 5, i.e., the center of the first upper surface 20a of the wavelength conversion member 20, is located closer to the second side surface 30d of the light-transmitting member 30 than the center C2 of the first surface 30a of the light-transmitting member 30. In this case, by arranging the light emitting element 10 so that a portion of the light emitting element 10 is embedded in the first lower surface 20b of the wavelength conversion member 20 (i.e., a portion of the light emitting element 10 is arranged in the recess 25), it is possible to reduce tilt of the light-transmitting member 30, due to its own weight, such that the first region 31 side approaches the wiring substrate 50 side.

[0052] (Step of placing covering member) 4F , the step S14 of arranging the covering member is a step of arranging the covering member 40 so as to expose the first surface 30a of the light-transmitting member 30 and cover the side surfaces of the light source 5 (i.e., the side surfaces of the wavelength conversion member 20 and the light emitting element 10). Here, the covering member 40 may be further arranged so as to cover the top surface and side surfaces of the electronic component 60 and the top surface of the wiring board 50. In step S14 of placing the covering member, the uncured resin that constitutes the covering member 40 is placed on the wiring substrate 50 so as to expose the first surface 30a of the light-transmitting member 30 and cover the side surfaces of the light source 5 and the light source 5. The resin can be placed by potting, for example. It is also possible to place the resin by compression molding, transfer molding, or the like. The resin is then cured to form the covering member 40. If necessary, the top surface of the formed covering member 40 may be cut to adjust the height or to flatten the top surface of the covering member 40.

[0053] In the method for manufacturing the light emitting device 100, a plurality of light emitting devices 100 may be manufactured simultaneously or individually using a single wiring board having a plurality of continuous regions that will become the wiring boards 50 of the individual light emitting devices 100 after singulation. When a plurality of light emitting devices 100 are manufactured simultaneously, after step S14 of arranging the covering member, the light emitting devices 100 are singulated into individual light emitting devices 100, and the light emitting devices 100 are formed.

[0054] Next, other embodiments will be described. Here, reference will be made to Figures 1A to 1D as appropriate, and the description of the configurations that have already been described will be omitted as appropriate. Note that the light-emitting devices according to other embodiments described below can also be light-emitting devices having a high-brightness region on the light-emitting surface.

[0055] Second Embodiment Fig. 5A is a top view schematically showing a light emitting device according to a second embodiment, and Fig. 5B is a cross-sectional view schematically showing a cross section taken along line VB-VB in Fig. 5A.

[0056] The light emitting device 100A differs from the light emitting device 100 of the first embodiment in that the second surface 30Ab of the light-transmitting member 30A has a groove 35 between the first side surface 30Ac and the second side surface 30Ad of the light-transmitting member 30A, and the light source 5 is disposed between the groove 35 and the second side surface 30Ad of the light-transmitting member 30A. 5A and 5B, in the light emitting device 100A, the groove 35 is preferably a groove that divides the second surface 30Ab of the light-transmitting member 30A into two separate regions. The groove 35 is disposed along the first side surface 5c of the light source 5 (i.e., the first side surface 20c of the wavelength conversion member 20 that constitutes the light source 5) and is spaced from the first side surface 5c of the light source 5. The groove 35 continues from the third side surface 30Ae of the light-transmitting member 30A to the fourth side surface 30Af of the light-transmitting member 30A. A covering member 40 is disposed in the groove 35. In the light emitting device 100A, the light-transmitting member 30A has the grooves 35, so that, as will be described later, a portion of the light emitted from the light source 5 and propagating through the light-transmitting member 30A is reflected by the grooves 35 and / or the covering member 40 disposed in the grooves 35 and is emitted from the second region 32A side. This increases the amount of light emitted from the second region 32A on the light emitting surface of the light emitting device 100A. Therefore, the brightness on the light source 5 side of the light emitting surface becomes relatively higher. This makes it possible to further increase the difference in brightness between the first region 31A and the second region 32A on the light emitting surface.

[0057] The grooves 35 are formed on the second surface 300b of the flat light-transmitting member 300, for example, after step S11 of arranging the wavelength conversion member. Alternatively, the grooves 35 may be formed after the light-transmitting member 300 is divided into individual pieces and before step S13 of arranging the light-transmitting member. The grooves 35 can be formed, for example, by removing a part of the light-transmitting member by laser irradiation or with a tool such as a blade.

[0058] The depth D2 of the groove 35 can be, for example, between 1 / 5 and 1 / 2 of the thickness of the light-transmitting member 30A. The width W1 of the groove 35 (i.e., the maximum length in the direction from the first side surface 30Ac to the second side surface 30Ad) is, for example, between 1 / 2 and 1 / 1 of the depth D1 of the groove. The depth D2 and width W1 of the groove 35 may be substantially constant over the entire region, or may have partially different depths D2 and widths W1.

[0059] Third Embodiment FIG. 6 is a cross-sectional view schematically showing a light emitting device according to the third embodiment.

[0060] The light emitting device 100B differs from the light emitting device 100A of the second embodiment in that it includes a light absorbing member 70 that is spaced apart from the light source 5 and is disposed on the second surface 30Ab of the light-transmitting member 30A. The light absorbing member 70 preferably has a light blocking property and a reflectance lower than that of the covering member 40. Specifically, the light absorbing member 70 preferably has a light absorbing property. As shown in Fig. 6, the light absorbing member 70 is disposed in the first region 31A on the second surface 30Ab of the light-transmitting member 30A. The light absorbing member 70 is preferably spaced apart from the light source 5. Furthermore, in this embodiment, as shown in Fig. 6, the light-transmitting member 30A preferably has a groove 35. Note that, when the light-transmitting member 30A has the groove 35, it is preferable that the light absorbing member 70 is not disposed in the groove 35. This makes it possible to reduce light absorption by the light absorbing member 70 of the light emitted from the second region 32A. By including the light absorbing member 70, the light emitting device 100B absorbs a portion of the light emitted from the light source 5 and guided toward the first region 31A of the light-transmitting member 30A by the light absorbing member 70. This allows the brightness of the first region 31A on the light emitting surface of the light emitting device 100B to be relatively lower than the brightness of the second region 32A. This allows the difference in brightness between the first region 31A and the second region 32A on the light emitting surface to be greater.

[0061] The light absorbing member 70 is preferably a gray or black resin containing a black pigment such as carbon black or titanium black. Examples of resins that can be used include fluororesin, acrylic resin, silicone resin, epoxy resin, and urethane resin. Specifically, the light absorbing member 70 may be a silicone resin containing 0.1% by mass to 10% by mass of carbon black. The thickness of the light absorbing member 70 is preferably 10 μm to 40 μm, and more preferably 20 μm to 30 μm. When the light source 5 includes a wavelength conversion member 20, the thickness of the light absorbing member 70 is preferably thinner than the thickness of the wavelength conversion member 20.

[0062] The light absorbing member 70 is disposed on the second surface 300b of the flat plate-shaped light-transmitting member 300, for example, before step S11 of disposing the wavelength conversion member. Alternatively, the light absorbing member 70 may be disposed before step S13 of disposing the light-transmitting member after the light-transmitting member 300 is divided into individual pieces. The light absorbing member 70 can be arranged by, for example, printing, spray coating, etc. A plate-shaped light absorbing member 70 may be prepared and directly bonded to the light-transmitting member 30A, or may be bonded to the light-transmitting member 30A using a known adhesive member.

[0063] Most of the light emitted from the light source 5 is emitted from the first surface 30Aa of the light-transmissive member 30A on the wavelength conversion member 20 side. On the other hand, because the first region 31A of the light-transmissive member 30A is far from the light source 5 in a top view, the amount of light emitted from the first surface 30Aa of the light-transmissive member 30A on the first region 31A side is small. Furthermore, part of the light emitted from the light source 5 is reflected by the grooves 35 and / or the covering member 40 arranged in the grooves 35, returns to the wavelength conversion member 20 side, and is emitted from the first surface 30Aa of the light-transmissive member 30A on the wavelength conversion member 20 side. Furthermore, part of the light emitted from the light source 5 propagating within the light-transmissive member 30A is absorbed by the light-absorbing member 70. As a result, the amount of light emitted from the second region 32A side increases and the amount of light emitted from the first region 31A side decreases. Therefore, the luminance of the light emitting surface of the light emitting device 100B on the first region 31A side becomes lower, and the luminance of the light emitting surface on the second region 32A side becomes relatively higher.

[0064] <Fourth embodiment> FIG. 7 is a cross-sectional view schematically showing a light emitting device according to the fourth embodiment.

[0065] The light emitting device 100C differs from the light emitting device 100B of the third embodiment in that it includes a light diffusing member 80 disposed on the first surface 30Aa of the light-transmitting member 30A. As shown in FIG. 7, the light diffusion member 80 is disposed on the first surface 30Aa of the light-transmitting member 30A and on the upper surface of the covering member 40. By including the light diffusing member 80 in the light emitting device 100C, the light emitted from the light source 5 is diffused by the light diffusing member 80, and the boundary between the first region 31A side and the second region 32A side in the light emitted from the light emitting device 100C can be made less visible. Furthermore, by having the light diffusing member 80 cover the upper surface of the covering member 40, the boundary between the light-transmitting member 30A and the covering member 40 can be made less visible. This allows for smoother changes in illuminance within the illumination range when the light emitting device 100C is used as a light source for an automobile headlight, for example.

[0066] The light diffusion member 80 may be, for example, a plate-shaped material made by incorporating a light diffusion substance into a translucent material such as resin, glass, or inorganic material. The resin, glass, or light diffusion substance may be any of those exemplified as the translucent member. The thickness of the light diffusion member 80 is preferably, for example, 10 μm to 100 μm, and more preferably 20 μm to 50 μm.

[0067] The light diffusion member 80 is disposed on the first surface 30Aa of the light-transmitting member 30A and the upper surface of the covering member 40, for example, after step S14 of disposing the covering member. The light diffusing member 80 can be bonded to the first surface 30Aa of the light-transmitting member 30A and the upper surface of the covering member 40 using, for example, a known adhesive member. Alternatively, the light diffusing member 80 may cover the first surface 30Aa of the light-transmitting member 30A and the upper surface of the covering member 40 by, for example, electrodeposition, printing, spray coating, or the like.

[0068] Fifth Embodiment FIG. 8 is a cross-sectional view schematically showing a light emitting device according to a fifth embodiment.

[0069] The light emitting device 100D differs from the light emitting device 100C of the fourth embodiment in that it includes a support member 90 that is disposed on the wiring substrate 50 and supports the light-transmitting member 30A. 8, the support member 90 covers the electronic components 60 and is arranged in contact with the light-absorbing member 70 arranged on the light-transmitting member 30A. Here, the support member 90 supports the first region 31A side of the light-transmitting member 30A via the light-absorbing member 70, but if the light-emitting device does not include the light-absorbing member 70, the support member 90 may support the first region 31A side of the light-transmitting member 30A in contact with the light-transmitting member 30A. Furthermore, the support member 90 may cover a portion of the electronic components 60, or may support the light-transmitting member 30A without covering the electronic components 60. The light emitting device 100D includes the support member 90, which can prevent the first region 31A side of the light-transmitting member 30A from tilting toward the wiring board 50. This makes it possible to stably maintain the position of the light-transmitting member 30A.

[0070] For example, silicone resin, epoxy resin, or the like can be used as the support member 90. Furthermore, it is preferable that a high-viscosity resin be used for the support member 90 in order to maintain the height required to support the light-transmitting member 30A. For example, it is preferable that a resin having a viscosity of 200 Pa·s or more and 800 Pa·s or less at 25°C be used for the support member 90.

[0071] The support member 90 is disposed on the wiring substrate 50, for example, before step S13 of disposing the light-transmitting member. The support member 90 can be disposed by potting, for example.

[0072] Sixth Embodiment FIG. 9 is a cross-sectional view schematically showing a light emitting device according to the sixth embodiment.

[0073] The light emitting device 100E differs from the light emitting device 100 of the first embodiment in that a light absorbing member 70 is provided between the light source 5A and the light-transmitting member 30. 9, the light absorbing member 70 is disposed on the second surface 30b of the light-transmitting member 30, over an area from near the center of the upper surface 5Aa of the light source 5 to the first region 31 side of the light-transmitting member 30. In the light source 5A, the wavelength conversion member 20A is thinner in the area where the light absorbing member 70 is disposed than in the area where the light absorbing member 70 is not disposed, by the thickness of the light absorbing member 70. By including the light absorbing member 70, the light emitting device 100E absorbs a portion of the light emitted from the upper surface 5Aa of the light source 5A by the light absorbing member 70. Furthermore, of the light emitted from the light source 5A, a portion of the light on the first region 31 side of the light-transmitting member 30 is absorbed by the light absorbing member 70. Therefore, the brightness of the first region 31 side of the light emitting surface of the light emitting device 100E becomes relatively lower than that of the second region 32 side. This makes it possible to further increase the difference in brightness between the first region 31 side and the second region 32 side of the light emitting surface. The light absorbing member 70 can be disposed on the second surface 300b of the flat plate-shaped light-transmitting member 300, for example, before step S11 of disposing the wavelength conversion member. Other matters relating to the light absorbing member 70 are as described in the third embodiment. As a modification, a light reflecting member may be used instead of the light absorbing member 70. The same material as the covering member 40 may be used as the light reflecting member.

[0074] Seventh Embodiment FIG. 10 is a cross-sectional view schematically showing the light emitting device according to the seventh embodiment.

[0075] The light emitting device 100F differs from the configuration of the light emitting device 100 of the first embodiment in that the wavelength conversion member 20B does not have a recess on the first lower surface 20Bb, and a portion of the light emitting element 10 is not disposed within the recess. As shown in FIG. 10, the light source 5B has a light emitting element 10 disposed on a substantially flat first lower surface 20Bb of a wavelength conversion member 20B. The light emitting device 100F has a flat wavelength conversion member 20B. The flat wavelength conversion member 20B can be a resin molded body, glass, ceramics, a sintered body of a phosphor, or the like. This makes it possible to suitably use direct bonding such as atomic diffusion bonding or surface activated bonding as a method for bonding the wavelength conversion member 20B to the light emitting element 10 and / or a method for bonding the wavelength conversion member 20B to the light-transmitting member 30 in the light emitting device 100F.

[0076] The light emitting element 10 and the wavelength conversion member 20B may be bonded via a known adhesive member. The light emitting device may also include a light guiding member in which the adhesive member extends to the side surface of the light emitting element 10. The light guiding member may be, for example, a light-transmitting resin. The light guiding member may be, for example, an organic resin such as epoxy resin, silicone resin, phenol resin, or polyimide resin. When the wavelength conversion member 20B to which the light-transmitting member 30 is bonded is bonded to the light emitting element 10 via an adhesive member, the light emitting device 100F preferably includes a support member 90 that supports the light-transmitting member 30, as in the fifth embodiment and the example shown in FIG. 8, in order to prevent the light-transmitting member 30 from tilting due to its own weight.

[0077] The light-emitting device and the manufacturing method thereof according to the present embodiment have been specifically described above using the detailed description for carrying out the invention. However, the scope of the present invention is not limited to these descriptions and should be broadly interpreted based on the claims. Furthermore, various modifications and alterations based on these descriptions are also included in the scope of the present invention. Furthermore, the above-described embodiments can be implemented in combination with each other.

[0078] The wavelength conversion member may have a laminated structure of two or more layers. In this case, the phosphor concentration may be the ratio of the phosphor to the total amount of all layers containing the phosphor in the wavelength conversion member. Furthermore, the light emitting device may have a reflective film such as a dielectric multilayer film disposed on the upper surface of the wavelength conversion member or the light diffusing member, which makes it easier to adjust the brightness and luminous intensity of the light emitted from the light emitting region of the light emitting device.

[0079] In addition, in the manufacturing method of the light emitting device, the order of some steps is not limited, and the steps may be performed in reverse order. For example, after arranging the light emitting element on the wavelength conversion member, the light-transmitting member may be arranged on the wavelength conversion member. Furthermore, after arranging the light source on the wiring board, the light-transmitting member may be arranged on the light source. Furthermore, after arranging the light emitting element on the wiring board, the wavelength conversion member may be arranged on the light emitting element.

[0080] A light emitting device according to an embodiment of the present disclosure is, for example, as follows. [Section 1] a light source including a light emitting element and having a light emitting surface on an upper surface; a light-transmitting member having a first surface and a second surface located opposite to the first surface, the second surface being disposed so as to face an upper surface of the light source; a covering member that exposes a first surface of the light-transmitting member and covers a side surface of the light-transmitting member and a side surface of the light source, the side surface of the light source includes a first side surface connected to the top surface and a second side surface located opposite to the first side surface, the side surfaces of the light-transmitting member include a first side surface located on the same side as the first side surface of the light source and a second side surface located on the opposite side to the first side surface, A light emitting device in which, when viewed from above, the center of the upper surface of the light source is located closer to the second side surface of the light-transmitting member than the center of the first surface of the light-transmitting member, and the length from the first side surface of the light source to the first side surface of the light-transmitting member is at least 1 / 4 of the length from the first side surface of the light-transmitting member to the second side surface of the light-transmitting member. [Section 2] Item 2. The light emitting device according to item 1, wherein the light source comprises a wavelength conversion member on the light emitting element. [Section 3] the wavelength conversion member has a first upper surface that constitutes an upper surface of the light source and a first lower surface located opposite to the first upper surface, 3. The light emitting device according to item 2, wherein the first lower surface has a recess, and a part of the light emitting element is disposed in the recess. [Section 4] the second surface of the light-transmitting member has a groove between the first side surface and the second side surface of the light-transmitting member, 4. The light emitting device according to any one of items 1 to 3, wherein the light source is disposed between the groove and the second side surface of the light-transmitting member. [Section 5] 5. The light emitting device according to item 4, wherein the groove divides the second surface of the light-transmitting member into two regions spaced apart from each other. [Section 6] 6. The light emitting device according to any one of items 1 to 5, further comprising a light absorbing member disposed on a second surface of the light-transmitting member, the light absorbing member being spaced apart from the light source. [Section 7] 7. The light emitting device according to any one of items 1 to 6, further comprising a light diffusing member disposed on a first surface of the light-transmitting member. [Section 8] a wiring board on which the light source is disposed; Item 8. The light emitting device according to any one of items 1 to 7, further comprising: an electronic component disposed on the wiring board at a distance from the light source. [Section 9] a wiring board on which the light source is disposed; Item 9. The light emitting device according to any one of items 1 to 8, further comprising a support member disposed on the wiring substrate and supporting the light-transmitting member. [Industrial Applicability]

[0081] The light emitting device according to the embodiment of the present disclosure can be suitably used for vehicle lighting such as headlights, etc. In addition, the light emitting device according to the embodiment of the present disclosure can be used in backlight sources for liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements and destination guides, as well as image reading devices in digital video cameras, facsimiles, copiers, scanners, etc., projectors, etc. [Explanation of symbols]

[0082] 5, 5A, 5B light source 5a, 5Aa top surface 5b Bottom side 5c 1st side 5d 2nd side 5e 3rd aspect 5f 4th side 8 Conductive material 10 Light-emitting element 10a 2nd top surface 10b 2nd bottom surface 20, 20A, 20B Wavelength conversion material 20a 1st top surface 20b, 20Bb 1st bottom surface 20c 1st side 20d 2nd side 25 recess 30, 30A Translucent member 30a, 30Aa 1st side 30b, 30Ab second side 30c, 30Ac 1st side 30d, 30Ad 2nd side 30e, 30Ae 3rd side 30f, 30Af 4th side 31, 31A 1st area 32, 32A 2nd area 35 Groove 300 Translucent material 300b 2nd side 40 Covering material 50 Wiring board 51 Base material 52 Wiring 2 Top wiring 3 Bottom wiring 301 Anode terminal 302 Cathode terminal 4 Via 60 Electronic Components 70 Light absorbing material 80 Light diffusion material 90 Support member 100, 100A, 100B, 100C, 100D, 100E, 100F Light-emitting device C1, C2 center D1, D2 depth L1, L2, L3, L4 lengths Lt light T1 Thickness W1 width

Claims

1. A method of manufacturing a light-emitting device, comprising: preparing a light-transmitting member having a first surface and a second surface located opposite to the first surface, and an uncured or semi-cured wavelength conversion member disposed on the second surface; and arranging the light-transmitting member on the light-emitting element such that a portion of the light-emitting element is embedded in a first lower surface of the wavelength conversion member, the first lower surface being disposed on the light-transmitting member and having a first upper surface and a first lower surface located opposite to the first upper surface, the wavelength conversion member has, as side surfaces, a first side surface and a second side surface located on the opposite side to the first side surface, the light-transmitting member has, as side surfaces, a first side surface located on the same side as the first side surface of the wavelength conversion member, and a second side surface located on the opposite side to the first side surface of the light-transmitting member, a light-emitting device manufacturing method, wherein, in the light-transmitting member prepared in the step of preparing the light-transmitting member, a center of a first upper surface of the wavelength conversion member is located closer to a second side surface of the light-transmitting member than a center of a first surface of the light-transmitting member when viewed from above.

2. A method for manufacturing a light-emitting device as described in claim 1, wherein the step of positioning the translucent member involves applying pressure from the translucent member side or from the light-emitting element side.

3. A method for manufacturing a light-emitting device as described in claim 1 or claim 2, further comprising, after the step of placing the translucent member, a step of exposing a first surface of the translucent member and placing a covering member that covers the side of the translucent member, the side of the wavelength conversion member, and the side of the light-emitting element.

4. A method for manufacturing a light-emitting device as described in claim 1 or claim 2, further comprising a step of placing the light-emitting element on a wiring board before the step of placing the translucent member.

5. A method for manufacturing a light-emitting device as described in Claim 4, wherein the process of arranging the light-emitting element on a wiring board includes a process of arranging electronic components on the wiring board.

6. In the step of preparing the translucent member, the translucent member has a groove between a first side surface of the translucent member and a second side surface of the translucent member on the second surface, The method for manufacturing a light emitting device according to claim 1 , wherein the wavelength conversion member is disposed between the groove and the second side surface of the light-transmitting member.

7. A method for manufacturing a light-emitting device as described in claim 1 or claim 2, wherein in the translucent member and the wavelength conversion member prepared in the process of preparing the translucent member, the length from the first side of the wavelength conversion member to the first side of the translucent member is at least 1 / 4 of the length from the first side of the translucent member to the second side of the translucent member.

8. A method for manufacturing a light-emitting device as described in claim 1 or claim 2, wherein the step of preparing the translucent member includes preparing a flat translucent member having a plurality of regions that will become the translucent member after being singulated, arranging the wavelength conversion member on the flat translucent member, and then dividing the flat translucent member, and preparing a plurality of the singulated translucent members on which the wavelength conversion member is arranged.