Room temperature quantum sensors

Abstract

To provide quantum sensors.SOLUTION: In one form of the present disclosure, a quantum sensor comprises a quantum device. The quantum device comprises gallium nitride (GaN) with a color center with a zero-phonon line (ZPL) between about 900 nanometers (nm) and about 990 nm. The GaN can be doped with silicon (Si) and have low carbon (C) and oxygen (O) impurity densities. In one example, the quantum device is GaN doped with about 1016 Si atoms per cm3, and having less than about 8×1015 C atoms per cm3 and less than about 6×1015 O atoms per cm3, and a Ga vacancy density less than about 1016 vacancies per cm3.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates generally to quantum sensors, and more particularly to gallium nitride (GaN) quantum sensors. [Background technology]

[0002] Quantum sensors are devices that use the properties of quantum mechanics to measure physical properties, resulting in more precise measurements than conventional sensing devices. Quantum sensors utilize color centers in materials to measure physical properties. For example, the negatively charged nitrogen-vacancy (NV-) centers found in diamond have been used as quantum sensors, where NV- quantum sensors can measure physical properties such as magnetic field strength, electric field strength, temperature, strain, and room temperature. While the NV- color centers in diamond are well understood and have advantageous spin properties and strong optical contrast at room temperature, commercially available diamond crystals typically measure approximately 1 cm. 2 Therefore, it is difficult to fabricate cost-effective large-scale diamond NV color center quantum sensors. Summary of the Invention [Problem to be solved by the invention]

[0003] The present disclosure addresses challenges related to creating cost-effective, scalable quantum sensors, as well as other challenges related to quantum sensors. [Means for solving the problem]

[0004] This section provides a general overview of the disclosure and is not an exhaustive disclosure of its entire scope or features.

[0005] In one aspect of the present disclosure, a quantum sensor includes a quantum device comprising gallium nitride (GaN) having a color center with a zero-phonon line (ZPL) between about 940 nanometers (nm) and about 960 nm.

[0006] In another aspect of the present disclosure, a quantum sensor includes a quantum device comprising GaN having a color center with a ZPL between about 900 nanometers (nm) and about 990 nm, wherein the GaN is doped with Si, and the quantum device is configured to operate between about -40 degrees Celsius (°C) and about 100°C.

[0007] In yet another aspect of the present disclosure, a quantum sensor includes a quantum device. The quantum device includes GaN having a color center with a ZPL of about 949 nanometers (nm) to about 951 nm. The GaN is Si-doped and has a ZPL of 1 cm. 3 Approximately 8 x 10 15 less than 1 C atom and 1 cm 3 Approximately 6 x 10 15 The quantum device has less than 100 O atoms. Further, the quantum device is configured to operate at about 15° C. to about 25° C. and to measure at least one of the temperature and magnetic field strength of the sample.

[0008] Further areas of applicability and various ways of enhancing the above techniques will become apparent from the description provided herein. The description and specific examples in this summary are intended for illustrative purposes only and are not intended to limit the scope of the present disclosure.

[0009] The present teachings will become more fully understood from the detailed description and the accompanying drawings, wherein: [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 illustrates a quantum sensor system utilizing gallium nitride (GaN) quantum devices in accordance with the teachings of the present disclosure. [Figure 2] FIG. 1 illustrates another quantum sensor system having a sample embedded with GaN quantum device nanoparticles in accordance with the teachings of the present disclosure. [Figure 3]FIG. 1 shows the photoluminescence spectrum of a GaN sample measured at room temperature. [Figure 4] FIG. 4 shows the optically detected magnetic resonance (ODMR) spectrum of the GaN sample of FIG. 3. [Figure 5] FIG. 1 illustrates a flowchart of a method according to the teachings of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011] The present disclosure provides quantum sensors (also referred to herein simply as "sensors") and sensor systems configured to measure various physical properties of a sample. For example, the sample may include a biological sample, such as biological cells (e.g., blood cells, skin cells, fat cells, etc.), an electrical device, a power device, a catalyst, and / or a battery electrolyte. The physical properties measured may include, among others, the temperature of the sample, the electric field strength at or within the sample, the magnetic field strength at or within the sample, and the pH of the sample. In one aspect of the present disclosure, the quantum sensor includes a quantum device, which includes gallium nitride (GaN). Without being bound by theory, GaN has desirable properties for quantum sensing. In particular, GaN has easily tunable electrical conductivity (i.e., both n-type and p-type conductivity depending on the application), a wide bandgap (approximately 3.4 eV), controllable carrier concentration, and is non-toxic to biological samples. Furthermore, GaN-based quantum sensors according to the teachings of the present disclosure can be formed using large-diameter wafers and well-established semiconductor technology. Therefore, GaN-based quantum sensors according to the teachings of the present disclosure are easier and more cost-effective to manufacture than conventional diamond-based quantum sensors. Furthermore, the GaN-based quantum sensors provided by the teachings of the present disclosure include a suitable zero-phonon line (ZPL) range that can be used for biosensing applications. For example, in one embodiment of the present disclosure, GaN has a ZPL of about 940 nanometers (nm) to about 960 nm, which is suitable for biosensing. Because longer wavelength lasers can be used compared to diamond NV centers, which use a laser wavelength of 532 nm, these GaN-based quantum sensors can be excited and emit signals to a detector even when the GaN-based sensor is located deeper in the sample. In other words, longer wavelength lasers allow for deeper penetration depths in biological materials. It should be understood that the ZPL is the energy difference between the excited and ground states of a color center.In addition, the ZPL has a frequency that is determined by the intrinsic energy difference between the excited and ground states, as well as by the local environment of the color center.

[0012] In one or more variations, the GaN is doped with silicon (Si). For example, in some variations, the GaN is doped with silicon (Si) in a volume of less than 1 cubic centimeter (cm 3 ) approximately 10 16 Further, in one or more embodiments, GaN contains 1 cm 3 Approximately 8 x 10 15 Less than 1 carbon (C) atom and 1 cm 3 Approximately 6 x 10 15 In addition, in at least one variation, the Ga vacancy density is less than 1 cm 3 Approximately 10 per 16 The Si concentration, together with the low concentrations of C and O impurities and the low concentration of Ga vacancies, supports the formation of color centers and stabilizes the bright state of color centers with a ZPL of about 900 nm to about 990 nm, for example, a color center with a ZPL of about 940 nm to about 960 nm.

[0013] As discussed below in connection with FIGS. 1 and 2, GaN quantum sensors can be implemented in various forms. For example, in one form, the GaN quantum sensor is configured as a chip, in which case the sample can be placed on the chip, i.e., the sample is in direct contact with the GaN quantum sensor. As used herein, the term "chip" refers to a layer of semiconductor material (also known as a wafer) with embedded electronic circuitry. In this form, the GaN quantum sensor is excited with a laser and a radio frequency (RF) source (e.g., a microwave source) that can modulate and analyze the fluorescent emission of the GaN quantum sensor to extract information about the sample. As another example, in one form, the GaN quantum sensor is configured as nanoparticles embedded in the sample. In this form, the GaN quantum sensor and sample are excited with a laser and an RF source that can modulate and analyze the fluorescent emission of the GaN quantum sensor to extract information about the sample. In either case, the GaN quantum sensor is configured to operate at room temperature (i.e., about 15 degrees Celsius (°C) to about 25°C) in one or more non-limiting examples.

[0014] Referring to FIG. 1 , a non-limiting example quantum sensor system 100 (also referred to herein as “system 100”) is shown. System 100, in one or more embodiments, is configured to perform optically detected magnetic resonance (ODMR) spectroscopy. In one or more variations, system 100 includes quantum device 110. As shown in FIG. 1 , quantum device 110, in one or more embodiments, is a semiconductor chip including GaN. In at least one variation, the GaN includes color centers that are utilized by system 100 to measure physical properties of sample 120 disposed on quantum device 110. As used herein, the phrase “color center” refers to a crystalline defect that introduces or provides additional optical absorption or emission in a crystalline material. In some variations, the color center is an impurity, i.e., a foreign atom. Alternatively or additionally, the color center is a vacancy. Sample 120 may be, for example, a biological sample such as a droplet of blood, a skin cell, an adipocyte, an electrical device, a power device, a catalyst, an electrolyte sample, and / or another suitable sample.

[0015] To measure the physical properties of sample 120, system 100, in one or more variations, includes laser source 130. In one embodiment, laser source 130 is an excitation source for quantum device 110 and sample 120. Laser source 130 emits laser beam 132 that contacts or illuminates quantum device 110, which is in direct contact with sample 120. Laser beam 132 excites electrons in the GaN color centers, inducing fluorescence from the GaN color centers. Laser source 130, in one or more embodiments, is a 532 nm green laser. In other embodiments, laser source 130 emits longer laser wavelengths, such as 594 nm, 612 nm, 633 nm, 647 nm, or 694 nm, among others. For example, laser source 130 may be an indium gallium nitride (InGaN)-based laser or an InGaN LED light source emitting a green laser at 532 nm, or a krypton (Kr)-based laser emitting a red laser at 647 nm. In one or more variations, system 100 includes a dichroic mirror 140 or other reflective surface that reflects laser beam 132 from laser source 130 onto quantum device 110 / sample 120.

[0016] System 100 further includes, in one or more embodiments, a microwave source 150 that applies a microwave signal to the GaN color center during ODMR spectroscopy. The microwave signal is amplified, in one embodiment, by amplifier 160. In either case, the applied microwave signal causes a change in the spin state of the GaN color center, inducing a resonant transition. The resonant transition may modulate the fluorescence (e.g., the wavelength and / or intensity of the fluorescence) emitted by quantum device 110. In one or more variations, spectrometer 190 detects and analyzes the fluorescence emitted by quantum device 110. The intensity and / or wavelength of the fluorescence is measured by spectrometer 190 as a function of the microwave signal emitted by microwave source 150. The collected fluorescence data may be collected using a computer or microcontroller 170 of system 100. The change in fluorescence as a function of the microwave signal provides insight into sample 120. For example, in one or more variations, the fluorescence intensity can provide information about the magnetic field strength at or within the sample 120, the electric field strength at or within the sample 120, the pH of the sample 120, and / or the temperature of the sample 120.

[0017] Referring now to FIG. 2 , another non-limiting example quantum sensor system 200 (also referred to herein as “system 200”) is disclosed. In some variations, system 200 is similar to system 100 described above with respect to FIG. 1 and includes one or more of laser source 130, dichroic mirror 140, microwave source 150, amplifier 160, spectrometer 190, and computer 170 with controller 172 and memory 174. However, unlike system 100, sample 220 is disposed on substrate 180, and quantum device 230 is disposed within sample 220. For example, as shown in FIG. 2 , quantum device 230 is disposed within biological cell 222. Additionally, in at least one variation, quantum device 230 is a GaN nanoparticle with a color center that is utilized by system 200 to measure physical properties of sample 220 and / or biological cell 222. That is, one or more physical properties of sample 220 and / or biological cell 222 are measured by exciting electrons in the GaN color center with laser beam 132, which induces fluorescence emission from the GaN color center. Microwave source 150 then applies a microwave signal to the GaN color center such that the fluorescence intensity and / or wavelength measured by spectrometer 190, as a function of the microwave signal, provides information about one or more physical properties of sample 220 and / or biological cell 222. For example, in one or more variations, the fluorescence intensity can provide information about the magnetic field strength at or in sample 220 and / or biological cell 222, the electric field strength at or in sample 220 and / or biological cell 222, the pH of sample 220 and / or biological cell 222, and / or the temperature of sample 220 and / or biological cell 222.

[0018] As noted above, in some variations, the quantum devices discussed in connection with Figures 1 and 2 are formed from GaN. The GaN may be doped GaN, and in some variations, the GaN is doped with Si, for example, via Si doping during chemical vapor deposition or Si ion implantation. In one or more non-limiting examples, the GaN may be formed from GaN having a thickness of 1 cm. 3 Approximately 10 per 16 1 cm. Furthermore, in one or more embodiments, GaN has low C and O impurity concentrations. For example, in one non-limiting example, GaN has a 1 cm 3 Approximately 8 x 10 15 less than 1 C atom and 1 cm 3 Approximately 6 x 10 15 Additionally, in at least one variation, the Ga vacancy density is less than 1 cm 3 Approximately 10 per 16 In one or more variations, the GaN has color centers with a ZPL between about 940 nm and about 960 nm. Non-limiting examples of average ZPLs for GaN include average ZPLs between about 940 nm and about 960 nm, between about 945 nm and about 955 nm, between about 948 nm and about 955 nm, between about 948 nm and about 952 nm, and between about 949 nm and about 951 nm. This ZPL thus makes GaN suitable for biosensing.

[0019] For example, referring to Figures 3 and 4, photoluminescence and ODMR spectra, respectively, obtained by subjecting the Si-doped GaN sample described in connection with Figures 1 and 2 to ODMR spectroscopy testing are shown. The Si-doped GaN sample was doped at 1 cm 3 Approximately 10 per 16 Si atoms, 1cm 3 Approximately 8 x 10 15 less than 1 C atom, 1 cm 3 Approximately 6 x 10 15 less than 1 O atom, and 1 cm 3 Approximately 10 per 16The GaN sample had a Ga vacancy density of less than 10 vacancies. The laser used to obtain the photoluminescence spectrum shown in Figure 3 and the ODMR spectrum shown in Figure 4 was a 532 nm laser with a power output of 5 microwatts (mW). Furthermore, the photoluminescence spectrum and ODMR spectrum were collected at room temperature (i.e., about 15°C to about 25°C). Referring to Figure 3, the photoluminescence spectrum is a plot of intensity versus frequency (nm) obtained from subjecting the GaN sample to ODMR spectroscopy. As shown in the photoluminescence spectrum, a peak representing the ZPL of Si-doped GaN occurred at a frequency of about 940 nm to about 960 nm.

[0020] Referring to Figure 4, the ODMR spectrum is a plot of photoluminescence (PL) versus microwave frequency (MHz) obtained from ODMR spectroscopy of a Si-doped GaN sample. As shown in the ODMR spectrum, an optical contrast peak appears at approximately 3850 MHz. The optical contrast peak is the point where the Si-doped GaN sample experiences an intensity change due to the spin state of the Si-doped GaN sample induced by the microwave signal emitted during ODMR spectroscopy. The presence of the optical contrast peak demonstrates that the Si-doped GaN quantum sensor with a ZPL of approximately 940 nm to approximately 960 nm can function at room temperature. Thus, the Si-doped GaN quantum sensor with a ZPL of approximately 940 nm to approximately 960 nm can be utilized at room temperature to measure physical properties (e.g., temperature and magnetic field strength) of samples such as biological samples and battery electrolytes.

[0021] 1-2 and with reference to FIG. 5, a method 30 for characterizing a sample using systems 100 and / or 200 is shown. Method 30 includes, at 300, disposing sample 120 on quantum device 110 (FIG. 1) or disposing quantum device 230 in sample 220 (FIG. 2), and, at 310, initiating optical excitation of quantum device 110, 230 using a light source. At 320, the microwave source initiates microwave excitation of quantum device 110, 230 at a predetermined frequency, and at 230, an optical signal (e.g., optical signal intensity) from the optically and microwave-excited quantum device 110, 230 is measured with a photodetector. Method 30 includes determining, at 340, whether the predetermined frequency at step 320 is greater than the final predetermined frequency. If the predetermined frequency at step 320 is less than or equal to the final predetermined frequency, method 30 updates and / or increases the predetermined frequency at 350 and returns to 320, where quantum device 110, 230 is microwave excited with the updated / increased microwave signal. This cycle, i.e., 320-330-340-350-320, continues until the predetermined frequency is greater than the final predetermined frequency. Then, if the predetermined frequency at 340 is greater than the final predetermined frequency, method 30 determines, at 360, the predetermined property of sample 120, 220. In some variations, computer 170 calculates (e.g., using controller 172) a value for the predetermined property using one or more equations stored in memory 174. Alternatively or additionally, computer 170 identifies (e.g., using controller 172) values ​​for the predetermined properties from a look-up table stored in memory 174. In this manner, system 100, system 200, and / or method 30 measure optical signals from optically and microwave-excited quantum devices 110, 230, respectively, as a function of the properties of sample 120, 220.

[0022] The foregoing description is merely exemplary in nature and is in no way intended to limit the present disclosure, its application, or uses. The work of the inventors named herein, to the extent that it may be described in the Background section, as well as any forms and / or variations of the present specification that may not otherwise be admitted as prior art at the time of filing, are not admitted explicitly or implicitly as prior art against the present technology.

[0023] As used herein, the phrase "at least one of A, B, and C" should be construed to mean the logic (A or B or C) using the non-exclusive logic "or." It should be understood that various steps within a method may be performed in different order without altering the principles of the present disclosure. The disclosure of ranges includes the disclosure of the entire range and subranges within the entire range.

[0024] Headings and subheadings used herein (such as "Background" and "Summary") are intended merely to generally organize the topics within the disclosure and are not intended to limit the disclosure or any of its aspects or variations. The recitation of multiple aspects or variations having stated features is not intended to exclude other aspects or variations having additional features or incorporating different combinations of the stated features.

[0025] As used herein, the term "about" when in connection with a numerical value refers to known commercial and / or experimental measurement variations or tolerances for the quantity referenced herein. In some variations, such known commercial and / or experimental measurement tolerances are ±10% of the measurement, while in other variations, such known commercial and / or experimental measurement tolerances are ±5% of the measurement, while in yet other variations, such known commercial and / or experimental measurement tolerances are ±2.5% of the measurement. And, in at least one variation, such known commercial and / or experimental measurement tolerances are ±1% of the measurement.

[0026] As used herein, the terms "comprise" and "include," and variations thereof, are intended to be open-ended, such that the sequential or list-based recitation of items does not exclude other similar items that may also be useful in the devices and methods of the present technology. Similarly, the terms "can" and "may," and variations thereof, are intended to be open-ended, such that a statement that an embodiment or variation can or may comprise certain elements or features does not exclude other embodiments or variations of the present technology that do not contain those elements or features.

[0027] The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments. In this regard, the blocks in the flowcharts or block diagrams may represent modules, segments, or portions of code, which contain one or more executable instructions for implementing the specified logical function(s). It should also be noted that in some alternative implementations, the functions noted in the blocks may occur out of the order noted in the figures. For example, two blocks shown in succession may in fact be executed substantially concurrently, or in some cases, the blocks may be executed in the reverse order, depending on the functionality involved.

[0028] The sensors, systems, components, controllers, computers, and / or processes described above may be implemented in hardware or a combination of hardware and software, either in a centralized fashion in one processing system or in a distributed fashion with different elements spread across multiple interconnected processing systems. Any type of processing system or other apparatus configured to perform the methods described herein is suitable. A typical combination of hardware and software may be a processing system having computer-usable program code that, when loaded and executed, controls the processing system to perform the methods described herein. The systems, components, and / or processes may also be embedded in a computer-readable storage device, such as a computer program product or other data program storage device, that is readable by a machine and tangibly embodies a program of instructions executable by that machine to perform the methods and processes described herein. These elements may also be embedded in an application product that comprises features that enable implementation of the methods described herein and that, when loaded into a processing system, can perform these methods.

[0029] Furthermore, the arrangements described herein may take the form of a computer program product embodied in one or more computer-readable medium(s) having computer-readable program code embodied therein, e.g., stored thereon. Any combination of one or more computer-readable medium(s) may be utilized. The computer-readable medium may be a computer-readable signal medium or a computer-readable storage medium. The phrase "computer-readable storage medium" refers to a non-volatile storage medium. The computer-readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination thereof. More specific examples (non-exhaustive list) of computer-readable storage media include a portable computer diskette, a hard disk drive (HDD), a solid-state drive (SSD), a ROM, EPROM, or flash memory, a portable compact disc read-only memory (CD-ROM), a digital versatile disc (DVD), an optical storage device, a magnetic storage device, or any suitable combination thereof. In the context of this document, a computer-readable storage medium may be any tangible medium that can contain or store a program for use by or in connection with an instruction execution system, apparatus, or device.

[0030] The broad teachings of the present disclosure can be embodied in a variety of forms. Thus, while the present disclosure includes certain examples, the true scope of the present disclosure should not be so limited, as other modifications will become apparent to those skilled in the art upon review of the specification and the following claims. Reference herein to one form or variant, or to various forms or variants, means that the particular feature, structure, or characteristic described in connection with that form or variant, or a particular system, is included in at least one form or variant of the present disclosure. The appearance of the phrases "in one form" or "in one variant" (or variants thereof) does not necessarily refer to the same form or variant. It should also be understood that the various method steps discussed herein need not be performed in the same order as shown, and that not every method step is required in every form or variant.

[0031] The above description of embodiments and variations has been provided for purposes of illustration and description. It is not intended to be exhaustive or to limit the present disclosure. Individual elements or features of a particular embodiment or variation are generally not limited to that particular embodiment or variation, but, where applicable, even if not specifically shown or described, may be interchangeable and used in selected embodiments or variations. It may also be variously modified. Such variations are not to be considered departures from the present disclosure, and all such variations are intended to be included within the scope of the present disclosure.

Claims

1. 1. A quantum sensor comprising: a quantum device comprising gallium nitride (GaN) having color centers, the zero phonon line (ZPL) of the color centers being between about 900 nanometers (nm) and about 990 nm; Quantum sensors equipped with

2. The quantum sensor of claim 1 , wherein the GaN is silicon (Si) doped.

3. The GaN is 1 cubic centimeter (cm ３ ) about 10 １６ The quantum sensor of claim 2 comprising Si atoms.

4. 10. The quantum sensor of claim 1, wherein the quantum device is configured to operate between about -40 degrees Celsius (°C) and about 100°C.

5. The GaN is 1 cm ３ Approximately 8 x 10 per １５ 10. The quantum sensor of claim 1, comprising less than 10 carbon (C) atoms.

6. The GaN is 1 cm ３ Approximately 6 x 10 per １５ 10. The quantum sensor of claim 1, comprising less than 10 oxygen (O) atoms.

7. 10. The quantum sensor of claim 1, wherein the ZPL of the GaN is from about 948 nm to about 955 nm.

8. 10. The quantum sensor of claim 1, wherein the ZPL of the GaN is between about 949 nm and about 951 nm.

9. The quantum sensor of claim 1 , wherein the quantum device is configured to measure a temperature of a sample.

10. The quantum sensor of claim 1 , wherein the quantum device is configured to measure a magnetic field strength of a sample.

11. 10. The quantum sensor of claim 1, further comprising a biological sample, wherein the quantum device is in contact with the biological sample and configured to measure at least one of a temperature and a magnetic field strength of the biological sample.

12. 10. The quantum sensor of claim 1, further comprising a battery electrolyte, wherein the quantum device is in contact with the battery electrolyte and is configured to measure at least one of a temperature and a magnetic field strength of the battery electrolyte.

13. 1. A quantum sensor comprising: a quantum device comprising gallium nitride (GaN) having color centers, the color centers having zero phonon lines (ZPLs) between about 900 nanometers (nm) and about 990 nm, the GaN being Si-doped, and the quantum device being configured to operate between about 15 degrees Celsius (°C) and about 25°C; Quantum sensors equipped with

14. 14. The quantum sensor of claim 13, wherein the ZPL of the GaN is between about 940 nm and about 960 nm.

15. 14. The quantum sensor of claim 13, wherein the ZPL of the GaN is from about 948 nm to about 955 nm.

16. The quantum sensor of claim 13 , wherein the quantum device is configured to measure a temperature of a sample.

17. The quantum sensor of claim 13 , wherein the quantum device is configured to measure a magnetic field strength of a sample.

18. 14. The quantum sensor of claim 13, further comprising a biological sample, wherein the quantum device is configured to measure at least one of a temperature and a magnetic field strength of the biological sample.

19. 14. The quantum sensor of claim 13, further comprising a battery electrolyte, wherein the quantum device is configured to measure at least one of a temperature and a magnetic field strength of the battery electrolyte.

20. 1. A quantum sensor comprising: A quantum device comprising doped gallium nitride (GaN) having color centers, the color centers having a zero phonon line (ZPL) between about 940 nanometers (nm) and about 960 nm, and the doped GaN has a wavelength of 1 cm ３ About 10 per １６ Si-doped with Si atoms, 1 cm ３ Approximately 8 x 10 per １５ less than 1 C atom and 1 cm ３ Approximately 6 x 10 per １５ a quantum device having less than 100 O atoms, the quantum device being configured to operate between about 15 degrees Celsius (°C) and about 25°C and to measure at least one of a temperature and a magnetic field strength of a sample; Quantum sensors equipped with

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