High frequency module

Abstract

To provide a high frequency module with reduced transmission loss for signals in multiple bands.SOLUTION: A high frequency module 1 includes a switch 11 having a selection terminal 11b connected to an antenna 2a, a selection terminal 11c connected to an antenna 2b, and a common terminal 11a, a switch 12 having selection terminals 12a, 12b and a common terminal 12f, filters 41 and 42, an inductor 21 connected to a common path Pc connecting the common terminals 11a and 12f, an inductor 31 connected to a signal path P1 connecting the selection terminal 12a and the filter 41, and an inductor 32 connected to a signal path P2 connecting the selection terminal 12b and the filter 42, and a distance D31 between the inductor 21 and the inductor 31 is smaller than a distance D32 between the inductor 21 and the inductor 32.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a high-frequency module. [Background technology]

[0002] Patent document 1 discloses a front-end module having a configuration in which a first inductance element connected to a signal path transmitting a low-band group signal and a second inductance element connected to a signal path transmitting a high-band group signal are electromagnetically coupled to cancel out second-order harmonic components propagating through the signal path for the high-band group. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2017 / 006866 Summary of the Invention [Problem to be solved by the invention]

[0004] With the advancement of multi-band technology, there is a demand for high-frequency modules that reduce transmission loss of signals in multiple bands.

[0005] SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a high-frequency module in which transmission loss of signals in multiple bands is reduced. [Means for solving the problem]

[0006] In order to achieve the above object, a high-frequency module according to one embodiment of the present invention comprises: a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; and a third inductor connected to a second path connecting the fourth selection terminal and the second filter, wherein the distance between the first inductor and the second inductor is smaller than the distance between the first inductor and the third inductor.

[0007] Furthermore, a high-frequency module according to one aspect of the present invention includes: a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter, a second filter, a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; and a third inductor connected to a second path connecting the fourth selection terminal and the second filter, wherein the angle formed between the positive winding axis direction of the first inductor and the positive winding axis direction of the second inductor is smaller than the angle formed between the positive winding axis direction of the first inductor and the positive winding axis direction of the third inductor.

[0008] Furthermore, a high-frequency module according to one embodiment of the present invention includes a first switch having a first selection terminal connected to a first antenna, a second selection terminal connected to a second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; and a metal member arranged between the first inductor and the third inductor. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a high-frequency module in which transmission loss of signals in multiple bands is reduced. [Brief explanation of the drawings]

[0010] [Figure 1A] 1 is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment when receiving band A. FIG. [Figure 1B] 1 is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment when receiving band B. FIG. [Figure 1C] 1 is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment when simultaneously receiving band A and band B. FIG. [Figure 1D] FIG. 1 is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment when a diver circuit is used. [Figure 2] 1A and 1B are a plan view and a cross-sectional view of a high-frequency module according to an embodiment; [Figure 3] FIG. 10 is a plan view of a high-frequency module according to a first modified example of the embodiment. [Figure 4] 10A and 10B are a plan view and a cross-sectional view of a high-frequency module according to a second modification of the embodiment. [Figure 5A] FIG. 11 is a circuit configuration diagram of a high-frequency module according to a third modification of the embodiment when receiving a signal in band A. [Figure 5B] FIG. 11 is a circuit configuration diagram of a high-frequency module according to a third modified example of the embodiment when receiving band B. [Figure 5C] FIG. 11 is a circuit configuration diagram of a high-frequency module according to a third modification of the embodiment when receiving a band C signal. [Figure 6] 11 is a graph illustrating the pass characteristics of a low-pass filter of a high-frequency module according to a third modification of the embodiment. [Figure 7A] FIG. 10 is a circuit configuration diagram of a high-frequency module according to a fourth modification of the embodiment when transmitting in band A. [Figure 7B]FIG. 11 is a circuit configuration diagram of a high-frequency module according to a fourth modified example of the embodiment when receiving a signal in band A. [Figure 7C] FIG. 10 is a circuit configuration diagram of a high-frequency module according to a comparative example when transmitting in band A. [Figure 8] 13 is a graph showing the pass characteristics of the low-pass filters of the high-frequency modules according to the fourth modification of the embodiment and the comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, component arrangements, and connection forms shown in the following embodiments are merely examples and are not intended to limit the present invention. Among the components in the following embodiments, components that are not recited in independent claims will be described as optional components. Furthermore, the sizes or size ratios of the components shown in the drawings are not necessarily strict.

[0012] It should be noted that the drawings are schematic diagrams in which emphasis, omission, or adjustment of proportions has been appropriately made to illustrate the present invention, and are not necessarily strictly illustrated, and may differ from the actual shapes, positional relationships, and proportions. In the drawings, the same reference numerals are used to denote substantially the same components, and redundant explanations may be omitted or simplified.

[0013] In the circuit configurations disclosed herein, "connected" includes not only direct connection by connection terminals and / or wiring conductors, but also electrical connection via matching elements or switch circuits. "Connected between A and B" means connected to both A and B between A and B.

[0014] In the present invention, a "terminal" refers to a point where a conductor within an element terminates. Note that a terminal is not limited to a single point, but may be any point (node) on the conductor between elements or the entire conductor, provided that the impedance of the conductor between elements is sufficiently low.

[0015] In addition, in this disclosure, the terms "signal path" and "common path" refer to a transmission line that is composed of a wiring through which a high-frequency transmission signal or a high-frequency reception signal propagates, an electrode directly connected to the wiring, and a terminal directly connected to the wiring or the electrode.

[0016] Furthermore, in the circuit element arrangement of the present disclosure, "circuit element A is arranged in series on path B" means that the signal input terminal and signal output terminal of circuit element A are connected to two wirings that form at least a part of path B, respectively. At least one of the two wirings may be an electrode or a terminal.

[0017] In addition, in this disclosure, a planar view of a board means that the board and the circuit elements mounted on the board are viewed by orthogonal projection onto a plane parallel to the main surface of the board.

[0018] Furthermore, in the component placement of the present disclosure, "a component is placed on a substrate" includes a component being placed on the main surface of the substrate and a component being placed within the substrate. "A component is placed on the main surface of the substrate" includes a component being placed in contact with the main surface of the substrate, as well as a component being placed above the main surface without contacting the main surface (for example, a component being stacked on another component placed in contact with the main surface). "A component is placed on the main surface of the substrate" may also include a component being placed in a recess formed in the main surface. "A component is placed within the substrate" includes a component being encapsulated within a module substrate, as well as a component being entirely placed between both main surfaces of the substrate but partially not covered by the substrate, and a component being only partially placed within the substrate.

[0019] Furthermore, in the component arrangement of the present disclosure, "the winding axes are aligned in the positive direction" does not simply mean that the angle formed by the vector component in the positive winding axis direction is 0°, but also includes a range in which the winding axes are substantially aligned in the positive winding axis direction, and for example includes a range in which the angle formed by the vector component in the positive winding axis direction is within ±30°.

[0020] In the following embodiments, the passband of a filter is defined as a frequency band between two frequencies that are 3 dB higher than the minimum value of insertion loss within the passband.

[0021] Furthermore, in the present disclosure, the term "band" refers to at least one of an uplink operating band and a downlink operating band of a frequency band predefined by a standardization organization (e.g., 3GPP (registered trademark), IEEE (Institute of Electrical and Electronics Engineers)), etc., for a communication system built using a radio access technology (RAT). In the present embodiment, examples of the communication system that can be used include, but are not limited to, a Long Term Evolution (LTE) system, a 5th Generation (5G)-New Radio (NR) system, and a Wireless Local Area Network (WLAN) system. Note that the uplink operating band of a frequency band refers to a frequency range designated for uplink within the frequency band. Furthermore, the downlink operating band of a frequency band refers to a frequency range designated for downlink within the frequency band.

[0022] (Embodiment) [1 Circuit configuration of high frequency module 1 and communication device 4] The circuit configuration of a high-frequency module 1 and a communication device 4 according to the present embodiment will be described with reference to FIGS. 1A to 1D. FIG. 1A is a circuit configuration diagram of the high-frequency module 1 and the communication device 4 according to the embodiment when receiving in band A. FIG. 1B is a circuit configuration diagram of the high-frequency module 1 and the communication device 4 according to the embodiment when receiving in band B. FIG. 1C is a circuit configuration diagram of the high-frequency module 1 and the communication device 4 according to the embodiment when simultaneously receiving in band A and band B. FIG. 1D is a circuit configuration diagram of the high-frequency module 1 and the communication device 4 according to the embodiment when using a diver circuit.

[0023] As shown in FIGS. 1A to 1D, a communication device 4 includes a high-frequency module 1, antennas 2a, 2b, and 2c, and an RF signal processing circuit (RFIC: Radio Frequency Integrated Circuit) 3.

[0024] The high-frequency module 1 transmits high-frequency signals between the antennas 2a to 2c and the RFIC 3. The detailed circuit configuration of the high-frequency module 1 will be described later.

[0025] Antenna 2a is an example of a first antenna, and is connected to antenna connection terminal 101 of high-frequency module 1, receiving high-frequency signals from the outside and outputting them to high-frequency module 1. Antenna 2b is an example of a second antenna, and is connected to antenna connection terminal 102 of high-frequency module 1, receiving high-frequency signals from the outside and outputting them to high-frequency module 1. Antenna 2c is connected to antenna connection terminal 103 of high-frequency module 1, receiving high-frequency signals from the outside and outputting them to high-frequency module 1. Note that antennas 2a to 2c may transmit high-frequency signals output from high-frequency module 1 to the outside.

[0026] The RFIC 3 is an example of a signal processing circuit that processes radio frequency signals. Specifically, the RFIC 3 performs signal processing, such as down-conversion, on a received signal input via the receive path of the radio frequency module 1, and outputs the received signal generated by the signal processing to a baseband signal processing circuit (BBIC, not shown). Note that the RFIC 3 may also perform signal processing, such as up-conversion, on a transmit signal input from the BBIC, and output the transmit signal generated by the signal processing to the transmit path of the radio frequency module 1.

[0027] The RFIC 3 also functions as a control unit that controls the connection switching of the switches 11 and 12 of the high-frequency module 1 and controls the power supply voltage and bias voltage (current) supplied to the low-noise amplifiers 51 to 55. Note that part or all of the control unit function of the RFIC 3 may be implemented outside the RFIC 3, for example, in the BBIC or the high-frequency module 1.

[0028] The antennas 2a to 2c do not necessarily have to be included in the communication device 4.

[0029] 1A to 1D, the high-frequency module 1 includes switches 11 and 12, filters 41, 42, 43, 44, and 45, inductors 21, 31, 32, 33, 34, and 35, a capacitor 22, low-noise amplifiers 51, 52, 53, 54, and 55, a coupler 60, antenna connection terminals 101, 102, and 103, an external connection terminal 104, and signal output terminals 105, 110, 120, 130, 140, and 150.

[0030] The antenna connection terminal 101 is an example of a first antenna connection terminal and is connected to the antenna 2a and the selection terminal 11b of the switch 11. The antenna connection terminal 102 is an example of a second antenna connection terminal and is connected to the antenna 2b and the selection terminal 11c of the switch 11. The antenna connection terminal 103 is connected to the antenna 2c and the selection terminal 11d of the switch 11. The external connection terminal 104 is connected to the selection terminal 11e of the switch 11. The signal output terminal 105 is connected to the sub-line of the coupler 60. The signal output terminal 110 is connected to the output terminal of the low-noise amplifier 51 and the RFIC 3. The signal output terminal 120 is connected to the output terminal of the low-noise amplifier 52 and the RFIC 3. The signal output terminal 130 is connected to the output terminal of the low-noise amplifier 53 and the RFIC 3. The signal output terminal 140 is connected to the output terminal of the low-noise amplifier 54 and the RFIC 3. The signal output terminal 150 is connected to the output terminal of the low-noise amplifier 55 and the RFIC 3.

[0031] The filter 41 is an example of a first filter and has a pass band that includes the receive band of band A. One end of the filter 41 is connected to the inductor 31, and the other end is connected to the input terminal of the low-noise amplifier 51. The filter 42 is an example of a second filter and has a pass band that includes the receive band of band B. One end of the filter 42 is connected to the inductor 32, and the other end is connected to the input terminal of the low-noise amplifier 52. The filter 43 has a pass band that includes the receive band of band C. One end of the filter 43 is connected to the inductor 33, and the other end is connected to the input terminal of the low-noise amplifier 53. The filter 44 has a pass band that includes the receive band of band D. One end of the filter 44 is connected to the inductor 34, and the other end is connected to the input terminal of the low-noise amplifier 54. The filter 45 has a pass band that includes the receive band of band E. One end of the filter 45 is connected to the inductor 35, and the other end is connected to the input terminal of the low-noise amplifier 55. The structure of the filters 41 to 45 is not particularly limited, and may be, for example, an acoustic wave filter including an acoustic wave resonator, or an LC filter including an inductor and a capacitor, etc. The filters 43 to 45 do not necessarily have to be included in the high-frequency module 1.

[0032] Switch 11 is an example of a first switch, and has common terminal 11a (first common terminal), selection terminals 11b (first selection terminal), 11c (second selection terminal), 11d, and 11e (external connection terminals). Switch 11 switches between connection and disconnection between common terminal 11a and selection terminal 11b, between connection and disconnection between common terminal 11a and selection terminal 11c, between connection and disconnection between common terminal 11a and selection terminal 11d, between connection and disconnection between selection terminal 11b and selection terminal 11e, between connection and disconnection between selection terminal 11c and selection terminal 11e, and between connection and disconnection between selection terminal 11d and selection terminal 11e. The common terminal 11a is connected to a common terminal 12f of the switch 12 via a common path Pc, the selection terminal 11b is connected to the antenna 2a via an antenna connection terminal 101, the selection terminal 11c is connected to the antenna 2b via an antenna connection terminal 102, the selection terminal 11d is connected to the antenna 2c via an antenna connection terminal 103, and the selection terminal 11e is connected to an external circuit (diverter circuit 9) via an external connection terminal 104. Note that the selection terminals 11d and 11e do not necessarily have to be included in the switch 11.

[0033] The switch 12 is an example of a second switch and has a common terminal 12f (second common terminal), selection terminals 12a (third selection terminal), 12b (fourth selection terminal), 12c, 12d, and 12e. The switch 12 switches between connection and disconnection between the common terminal 12f and the selection terminal 12a, between connection and disconnection between the common terminal 12f and the selection terminal 12b, between connection and disconnection between the common terminal 12f and the selection terminal 12c, between connection and disconnection between the common terminal 12f and the selection terminal 12d, and between connection and disconnection between the common terminal 12f and the selection terminal 12e. The common terminal 12f is connected to the common terminal 11a via a common path Pc, the selection terminal 12a is connected to an inductor 31, the selection terminal 12b is connected to an inductor 32, the selection terminal 12c is connected to an inductor 33, the selection terminal 12d is connected to an inductor 34, and the selection terminal 12e is connected to an inductor 35. The selection terminals 12c, 12d, and 12e do not necessarily have to be included in the switch 12.

[0034] Inductor 21 is an example of a first inductor, and is connected to a common path Pc that connects common terminals 11a and 12f. More specifically, one end of inductor 21 is connected to common terminal 11a, and the other end is connected to common terminal 12f.

[0035] The capacitor 22 is an example of a first capacitor and is connected between the common path Pc and ground. In the present embodiment, the capacitor 22 is connected to the common path Pc between the inductor 21 and the common terminal 12f, but may be connected to the common path Pc between the inductor 21 and the common terminal 11a.

[0036] The inductor 21 and the capacitor 22 constitute the low-pass filter 20. The capacitor 22 may be omitted. The inductor 21 may be connected between the common path Pc and the ground. If the capacitor 22 is not provided, the inductor 21 may function as an impedance matching circuit.

[0037] The inductor 31 is an example of a second inductor, and is connected to a signal path P1 (first path) that connects the selection terminal 12a and the filter 41. More specifically, one end of the inductor 31 is connected to the selection terminal 12a, and the other end is connected to the filter 41. Note that the inductor 31 may be connected between the signal path P1 and ground.

[0038] The inductor 32 is an example of a third inductor, and is connected to a signal path P2 (second path) that connects the selection terminal 12b and the filter 42. More specifically, one end of the inductor 32 is connected to the selection terminal 12b, and the other end is connected to the filter 42. Note that the inductor 32 may be connected between the signal path P2 and ground.

[0039] Inductor 33 is connected to a signal path connecting selection terminal 12c and filter 43. More specifically, one end of inductor 33 is connected to selection terminal 12c, and the other end is connected to filter 43. Inductor 33 may be connected between the signal path and ground. Inductor 34 is connected to a signal path connecting selection terminal 12d and filter 44. More specifically, one end of inductor 34 is connected to selection terminal 12d, and the other end is connected to filter 44. Inductor 34 may be connected between the signal path and ground. Inductor 35 is connected to a signal path connecting selection terminal 12e and filter 45. More specifically, one end of inductor 35 is connected to selection terminal 12e, and the other end is connected to filter 45. Inductor 35 may be connected between the signal path and ground. Inductors 33 to 35 do not have to be included in high-frequency module 1.

[0040] The inductors 21 and 31 are configured to be magnetically coupled together, and the inductors 21 and 32 are configured to be magnetically coupled together.

[0041] The low-noise amplifier 51 has an input terminal connected to the filter 41 and an output terminal connected to the signal output terminal 110. The low-noise amplifier 51 is capable of amplifying signals in the reception band of band A. The low-noise amplifier 52 has an input terminal connected to the filter 42 and an output terminal connected to the signal output terminal 120. The low-noise amplifier 52 is capable of amplifying signals in the reception band of band B. The low-noise amplifier 53 has an input terminal connected to the filter 43 and an output terminal connected to the signal output terminal 130. The low-noise amplifier 53 is capable of amplifying signals in the reception band of band C. The low-noise amplifier 54 has an input terminal connected to the filter 44 and an output terminal connected to the signal output terminal 140. The low-noise amplifier 54 is capable of amplifying signals in the reception band of band D. The low-noise amplifier 55 has an input terminal connected to the filter 45 and an output terminal connected to the signal output terminal 150. The low-noise amplifier 55 is capable of amplifying signals in the reception band of band E. The low noise amplifiers 51 to 55 may be a single low noise amplifier capable of amplifying received signals of bands A to E. The low noise amplifiers 51 to 55 do not have to be included in the high frequency module 1.

[0042] The coupler 60 is disposed on the common path Pc and is capable of measuring the power of a signal transmitted through the common path Pc. The coupler 60 has a main line and a sub-line that are electromagnetically coupled to each other, the main line being disposed on the common path Pc, one end of the sub-line being terminated, and the other end being connected to the signal output terminal 105.

[0043] According to this, by placing only one coupler 60 that measures the signal power on the common path Pc, the power of signals transmitted through multiple signal paths corresponding to bands A to E can be measured, thereby making it possible to miniaturize the high-frequency module 1.

[0044] Next, the following cases will be described with reference to Figures 1A to 1D: (1) receiving a signal in band A (band A reception mode), (2) receiving a signal in band B (band B reception mode), (3) simultaneously receiving signals in band A and band B (band A & B simultaneous reception mode), and (4) receiving a signal in an external circuit (external circuit reception mode) in the high-frequency module 1.

[0045] First, as shown in FIG. 1A, in (1) Band A reception mode, common terminal 11a and selection terminal 11b are connected, and common terminal 12f and selection terminal 12a are connected. In this circuit state, a Band A signal passes through antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 31, filter 41, and low-noise amplifier 51 and is output from signal output terminal 110. At this time, a signal flows through inductors 21 and 31, causing inductors 21 and 31 to magnetically couple and generate a mutual inductance (+M1) (first mutual inductance). As a result, the inductance value of low-pass filter 20 (common path Pc) is equal to the inductance value L21 of inductor 21 plus +M1. Furthermore, the inductance value of signal path P1 is equal to the inductance value L31 of inductor 31 plus +M1.

[0046] In addition, in (1) Band A reception mode, the signal of Band A is not limited to being received by antenna 2a, but may be received by antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0047] Next, as shown in FIG. 1B, in (2) Band B reception mode, common terminal 11a and selection terminal 11b are connected, and common terminal 12f and selection terminal 12b are connected. In this circuit state, a Band B signal passes through antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 32, filter 42, and low-noise amplifier 52 and is output from signal output terminal 120. At this time, a signal flows through inductors 21 and 32, causing inductors 21 and 32 to magnetically couple, generating a mutual inductance (+M2) (second mutual inductance). As a result, the inductance value of low-pass filter 20 (common path Pc) is equal to the inductance value L21 of inductor 21 plus +M2. Furthermore, the inductance value of signal path P2 is equal to the inductance value L32 of inductor 32 plus +M2.

[0048] In addition, in (2) Band B reception mode, reception of Band B signals is not limited to being performed by antenna 2a, and Band B signals may be received by antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0049] In conventional high-frequency modules, in order to place an optimized low-pass filter on each of multiple signal paths that transmit signals of multiple bands, low-pass filters were placed on each of the paths connecting antenna 2a and switch 11, the path connecting antenna 2b and switch 11, and the path connecting antenna 2c and switch 11.

[0050] In contrast, in the high-frequency module 1 according to the present embodiment, in the band A reception mode and the band B reception mode, a plurality of signal paths connecting the antennas 2a to 2c and any of the filters 41 to 45 also use the common path Pc, and one low-pass filter 20 is disposed in the common path Pc. As a result, no chip inductors are connected to the path connecting the antenna connection terminal 101 and the switch 11, the path connecting the antenna connection terminal 102 and the switch 11, or the path connecting the antenna connection terminal 103 and the switch 11.

[0051] According to this, the single inductor 21 arranged on the common path Pc can be used as a matching element for achieving impedance matching between the antennas 2a to 2c and the high-frequency module 1, and therefore the high-frequency module 1 can be made smaller.

[0052] Furthermore, by individually magnetically coupling inductor 21 of low-pass filter 20 with inductors 31 to 35 arranged in each signal path, the pass bandwidth and attenuation pole frequency of low-pass filter 20 can be optimized for each signal path for bands A to E. For example, in band A reception mode, inductors 21 and 31 are magnetically coupled to generate a mutual inductance (+M1), and in band B reception mode, inductors 21 and 32 are magnetically coupled to generate a mutual inductance (+M2) different from the mutual inductance (+M1). By generating such mutual inductances, the effective inductance value of common path Pc can be made larger than that of inductor 21, the effective inductance value of signal path P1 can be made larger than that of inductor 31, and the effective inductance value of signal path P2 can be made larger than that of inductor 32. Therefore, the inductance values ​​of inductors 21 and 31 can be reduced by the amount of mutual inductance (+M1), and the inductance values ​​of inductors 21 and 32 can be reduced by the amount of mutual inductance (+M2), thereby reducing the resistance loss of inductors 21, 31, and 32 and reducing the transmission loss of the signal path for band A and the signal path for band B.

[0053] 1C, in (3) Band A & B simultaneous reception mode, common terminal 11a and selection terminal 11b are connected, common terminal 12f and selection terminal 12a are connected, and common terminal 12f and selection terminal 12b are connected. In this circuit state, the Band A signal passes through antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 31, filter 41, and low-noise amplifier 51, and is output from signal output terminal 110. At the same time, the Band B signal passes through antenna 2a, switch 11, low-pass filter 20, switch 12, inductor 32, filter 42, and low-noise amplifier 52, and is output from signal output terminal 120. At this time, signals flow through inductors 21, 31, and 32, and inductor 21 magnetically couples with inductors 31 and 32, generating a mutual inductance (+M3). As a result, the inductance value of the low-pass filter 20 (common path Pc) is obtained by adding +M3 to the inductance value L21 of the inductor 21. The inductance value of the signal path P1 is obtained by adding +M1 to the inductance value L31 of the inductor 31, and the inductance value of the signal path P2 is obtained by adding +M2 to the inductance value L32 of the inductor 32.

[0054] In (3) Band A & B reception mode, the antenna 2a is not limited to receiving signals of band A and band B, and at least one signal of band A and band B may be received by antenna 2b or 2c. In this case, the common terminal 11a and the selection terminal 11c are connected, and / or the common terminal 11a and the selection terminal 11d are connected.

[0055] 1D, in (4) external circuit reception mode, selection terminal 11b and selection terminal 11e are connected. In this circuit state, the band A signal passes through antenna 2a, switch 11, and external connection terminal 104 and is output to diverter circuit 9, which is an external circuit of high-frequency module 1. Diverter circuit 9 includes, for example, switch 19, inductor 39, filter 49, and low-noise amplifier 59. The band A signal that passes through switch 11 of high-frequency module 1 passes through switch 19, inductor 39, filter 49, and low-noise amplifier 59 and is output to, for example, RFIC 3. Since switch 11 has selection terminal 11e, the band A signal transmitted through diverter circuit 9 does not pass through low-pass filter 20, thereby reducing transmission loss in the signal path connecting antennas 2a to 2c to diverter circuit 9.

[0056] In addition, in (4) external circuit reception mode, reception of band A signals is not limited to antenna 2a, and band A signals may be received by antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0057] [2. RF Module 1 Component Layout] Next, the component arrangement configuration of the high-frequency module 1 according to this embodiment will be described. FIG. 2 is a plan view and a cross-sectional view of the high-frequency module 1 according to this embodiment. FIG. 2(a) shows the arrangement of circuit components when the main surface 70a of the module substrate 70 is viewed from the positive side of the z-axis. Note that FIG. 2(a) shows the circuit components arranged on the main surface 70b of the module substrate 70 with dashed lines. FIG. 2(b) shows a cross-sectional view taken along line IIB-IIB in FIG. 2(a). Note that FIG. 2 omits the illustration of some of the wiring connecting the module substrate 70 and the circuit components. Also, FIG. 2 shows marks indicating the functions of the filters to facilitate understanding of their layout, but these marks are not attached to the actual filters.

[0058] The high-frequency module 1 shown in FIG. 2 further includes a module substrate 70, resin members 85 and 86, and a shield electrode layer 95 in addition to the components of the high-frequency module 1 shown in FIGS. 1A to 1D.

[0059] The module substrate 70 has opposing main surfaces 70a (first main surface) and 70b (second main surface), and is a substrate on which circuit components that constitute the high-frequency module 1 are mounted. As the module substrate 70, for example, a low-temperature co-fired ceramics (LTCC) substrate having a laminated structure of multiple dielectric layers, a high-temperature co-fired ceramics (HTCC) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL), a printed circuit board, or the like is used.

[0060] 2, filters 41 to 45 and inductors 21 and 31 to 35 are arranged on main surface 70a. Furthermore, semiconductor IC 81 and external connection terminals 91 and 92 are arranged on main surface 70b. Although not shown in FIG. 2, low-noise amplifiers 51 to 55, coupler 60, and capacitor 22 may be arranged on module substrate 70.

[0061] The semiconductor IC 81 is an example of a first semiconductor IC and includes the switches 11 and 12. The semiconductor IC 81 is configured using, for example, a complementary metal oxide semiconductor (CMOS), and specifically may be manufactured using an SOI (silicon on insulator) process. The semiconductor IC 81 may also be configured of at least one of GaAs, SiGe, and GaN. Note that the semiconductor material of the semiconductor IC 81 is not limited to the above-mentioned materials.

[0062] According to this, the circuit components that make up the high-frequency module 1 are distributed and arranged on both sides of the module substrate 70, so that the high-frequency module 1 can be made smaller.

[0063] Each of the inductors 21 and 31 to 35 is, for example, a surface-mount chip inductor. Each of the inductors 21 and 31 to 35 may be configured as a planar coil conductor formed on the module substrate .

[0064] As shown in FIG. 2(a), the distance D between the inductor 21 and the inductor 31 is 31 is the distance D between the inductor 21 and the inductor 32 32 is smaller than.

[0065] This makes it possible to make the mutual inductance (+M1) generated by the magnetic field coupling between inductors 21 and 31 different from the mutual inductance (+M2) generated by the magnetic field coupling between inductors 21 and 32. Furthermore, when the inductance values ​​of inductors 31 and 32 are approximately equal, it is possible to make the mutual inductance (+M1) larger than the mutual inductance (+M2).

[0066] This allows the inductance value of common path Pc to be greater than the inductance value of inductor 21, the inductance value of signal path P1 to be greater than the inductance value of inductor 31, and the inductance value of signal path P2 to be greater than the inductance value of inductor 32. Therefore, the inductance values ​​of inductors 21 and 31 can be reduced by the amount of mutual inductance (+M1), and the inductance values ​​of inductors 21 and 32 can be reduced by the amount of mutual inductance (+M2), thereby reducing the resistance loss of inductors 21, 31, and 32 and reducing the transmission loss of the signal path for band A and the signal path for band B. Furthermore, because the mutual inductance (+M1) and the mutual inductance (+M2) can be made different, it becomes possible to set the inductance value of common path Pc separately for transmitting signals for band A and signals for band B.

[0067] Furthermore, as shown in FIG. 2(a), the positive winding axis direction (negative x-axis direction) of inductor 21, the positive winding axis direction (negative x-axis direction) of inductor 31, and the positive winding axis direction (negative x-axis direction) of inductor 32 may be aligned.

[0068] According to this, the mutual inductance (+M1) and the mutual inductance (+M2) can be made positive. 31 and distance D 32 By adjusting the distance D, it is possible to define the magnitude relationship between the mutual inductance (+M1) and the mutual inductance (+M2). 31 is the distance D 32 Since the mutual inductance (+M1) is smaller than the mutual inductance (+M2), the mutual inductance (+M1) can be made larger than the mutual inductance (+M2).

[0069] If the inductor is a surface-mount chip component, its winding axis is the winding axis of the coil formed inside the component. If the inductor is configured as a planar coil formed on module substrate 70, its winding axis is an axis that is perpendicular to the plane including the planar coil and intersects with the area surrounded by the planar coil.

[0070] The direction of the winding axis of an inductor is defined as follows: When a coil constituting an inductor is viewed from one side of the winding axis toward the other side, and if a current flows clockwise (to the right) in the coil, the positive direction of the winding axis is defined as the direction from the one side of the winding axis toward the other side, and the negative direction of the winding axis is defined as the direction from the other side of the winding axis toward the one side.

[0071] The resin member 85 is disposed so as to cover the main surface 70a, the filters 41 to 45, and the inductors 21 and 31 to 35. The resin member 86 is disposed so as to cover the main surface 70b and the semiconductor IC 81.

[0072] The shield electrode layer 95 is formed so as to cover the surface of the resin member 85, the side surfaces of the resin member 86, and the side surfaces of the module substrate 70, and is set to the ground potential.

[0073] At least one of the resin members 85, 86 and the shield electrode layer 95 may be omitted.

[0074] 2(a), when the module substrate 70 is viewed from above, the inductors 31 and 32 overlap with the semiconductor IC 81. This allows the wiring connected to the selection terminals 12a and 12b of the switch 12 to be shortened, thereby reducing the transmission loss of the high-frequency module 1. It is sufficient that at least one of the inductors 31 and 32 and the semiconductor IC 81 overlap.

[0075] Although not shown, when the module substrate 70 is viewed from above, the inductor 21 may overlap the semiconductor IC 81. This allows the wiring connected to the common terminal 12f side of the switch 12 to be shortened, thereby reducing the transmission loss of the high-frequency module 1.

[0076] [3. Component Arrangement of High-Frequency Module 1A According to Modification 1] Next, the component arrangement of a high-frequency module 1A according to Modification 1 will be described. The high-frequency module 1A according to this modification includes switches 11 and 12, filters 41 to 45, inductors 21, 31, 32A, 33, 34, and 35, a capacitor 22, low-noise amplifiers 51 to 55, a coupler 60, antenna connection terminals 101 to 103, an external connection terminal 104, signal output terminals 105 and 110 to 150, a module substrate 70, resin members 85 and 86, and a shield electrode layer 95. The high-frequency module 1A according to this modification differs from the high-frequency module 1 according to the embodiment only in the arrangement of the inductor 32. Therefore, the following description of the high-frequency module 1A according to this modification will omit the same components as those of the high-frequency module 1 according to the embodiment and will focus on the different components.

[0077] The inductor 32A is an example of a third inductor, and is connected to a signal path P2 that connects the selection terminal 12b and the filter 42. More specifically, one end of the inductor 32A is connected to the selection terminal 12b, and the other end is connected to the filter 42.

[0078] 3 is a plan view of a high-frequency module 1A according to a first modification of the embodiment. As shown in the figure, filters 41 to 45 and inductors 21, 31, 32A, 33, 34, and 35 are arranged on a main surface 70a. A semiconductor IC 81 and external connection terminals 91 and 92 are arranged on a main surface 70b. Although not shown in FIG. 3, low-noise amplifiers 51 to 55, coupler 60, and capacitor 22 may be arranged on the module substrate 70.

[0079] This allows the circuit components that make up the high-frequency module 1A to be distributed and arranged on both sides of the module substrate 70, thereby making it possible to reduce the size of the high-frequency module 1A.

[0080] Each of the inductors 21, 31, 32A, 33, 34, and 35 is, for example, a surface-mount chip inductor. Each of the inductors 21, 31, 32A, 33, 34, and 35 may be configured as a planar coil conductor formed on the module substrate 70.

[0081] As shown in FIG. 3, the positive winding axis direction (negative x-axis direction) of inductor 21 and the positive winding axis direction (negative x-axis direction) of inductor 31 are aligned, and the positive winding axis direction (negative x-axis direction) of inductor 21 and the negative winding axis direction (negative x-axis direction) of inductor 32A are aligned.

[0082] This makes it possible to make the mutual inductance (+M1) generated by the magnetic field coupling between inductor 21 and inductor 31 different from the mutual inductance (-M2) generated by the magnetic field coupling between inductor 21 and inductor 32A. Furthermore, when the inductance values ​​of inductor 31 and inductor 32A are approximately equal, it is possible to make the mutual inductance (+M1) larger than the mutual inductance (-M2).

[0083] This allows the inductance value of common path Pc to be greater than the inductance value of inductor 21, and the inductance value of signal path P1 to be greater than the inductance value of inductor 31. Therefore, the inductance values ​​of inductors 21 and 31 can be reduced by the amount of mutual inductance (+M1), thereby reducing the resistance loss of inductors 21 and 31 and reducing the transmission loss of the signal path for band A. Furthermore, because the mutual inductance (+M1) and the mutual inductance (-M2) can be made different, it becomes possible to set the inductance value of common path Pc separately for transmitting signals for band A and signals for band B.

[0084] In this modified example, the positive winding axis direction of inductor 31 is the same as the positive winding axis direction of inductor 21, and the positive winding axis direction of inductor 32A is opposite to the positive winding axis direction of inductor 21. However, instead of this arrangement, the angle formed between the positive winding axis direction of inductor 21 and the positive winding axis direction of inductor 31 may be smaller than the angle formed between the positive winding axis direction of inductor 21 and the positive winding axis direction of inductor 32A.

[0085] This allows the inductance value of common path Pc to be greater than the inductance value of inductor 21, and the inductance value of signal path P1 to be greater than the inductance value of inductor 31. Therefore, the inductance values ​​of inductors 21 and 31 can be reduced by the amount of mutual inductance (+M1) generated by the magnetic field coupling between inductors 21 and 31, thereby reducing the resistance loss of inductors 21 and 31 and reducing the transmission loss of the signal path for band A. Furthermore, the mutual inductance (+M1) generated by the magnetic field coupling between inductor 21 and inductor 31 can be made greater than the mutual inductance (+M2) generated by the magnetic field coupling between inductor 21 and inductor 32A, making it possible to set the inductance value of common path Pc separately for transmitting band A signals and for transmitting band B signals.

[0086] As shown in FIG. 3, the distance D between the inductor 21 and the inductor 31 is 31 is the distance D between the inductor 21 and the inductor 32A. 32 It may be smaller than

[0087] This allows the mutual inductance (+M1) and the mutual inductance (+M2) to be more significantly different from each other. Furthermore, when the inductance values ​​of the inductors 21 and 31 are approximately equal, the mutual inductance (+M1) can be made larger than the mutual inductance (+M2).

[0088] 3, in a plan view of the module substrate 70, the inductors 31 and 32A overlap the semiconductor IC 81. This allows the wiring connected to the selection terminals 12a and 12b of the switch 12 to be shortened, thereby reducing the transmission loss of the high-frequency module 1A. Note that it is sufficient that at least one of the inductors 31 and 32A overlaps with the semiconductor IC 81.

[0089] Although not shown, when the module substrate 70 is viewed from above, the inductor 21 may overlap the semiconductor IC 81. This allows the wiring connected to the common terminal 12f side of the switch 12 to be shortened, thereby reducing the transmission loss of the high-frequency module 1A.

[0090] [4. Component Arrangement of High-Frequency Module 1B According to Modification 2] Next, the component arrangement of a high-frequency module 1B according to Modification 2 will be described. The high-frequency module 1B according to this modification includes switches 11 and 12, filters 41 to 45, inductors 21 and 31 to 35, a capacitor 22, low-noise amplifiers 51 to 55, a coupler 60, antenna connection terminals 101 to 103, an external connection terminal 104, signal output terminals 105 and 110 to 150, a module substrate 70, resin members 85 and 86, a shield electrode layer 95, and a ground metal plate 93. The high-frequency module 1B according to this modification differs from the high-frequency module 1 according to the embodiment only in that the ground metal plate 93 is provided. Therefore, the following description of the high-frequency module 1B according to this modification will omit the same components as those of the high-frequency module 1 according to the embodiment and will focus on the different components.

[0091] 4 is a plan view and a cross-sectional view of a high-frequency module 1B according to a second modification of the embodiment. As shown in the figure, filters 41 to 45, inductors 21 and 31 to 35, and a ground metal plate 93 are arranged on a main surface 70a. A semiconductor IC 81 and external connection terminals 91 and 92 are arranged on a main surface 70b. Although not shown in FIG. 4, low-noise amplifiers 51 to 55, coupler 60, and capacitor 22 may be arranged on the module substrate 70.

[0092] According to this, the circuit components that make up the high-frequency module 1B are distributed and arranged on both sides of the module substrate 70, thereby making it possible to reduce the size of the high-frequency module 1B.

[0093] The ground metal plate 93 is an example of a metal member, and is provided on the main surface 70a between the inductors 21 and 31 and the inductor 32. More specifically, the ground metal plate 93 is provided on the main surface 70a so as to surround the inductors 21 and 31. The ground metal plate 93 may be bonded to the shield electrode layer 95 as shown in FIG. 4(b), or may be connected to a ground layer formed in the module substrate 70.

[0094] According to this, since a ground metal plate 93 is placed between the inductors 21 and 32, it is possible to make the mutual inductance (+M2) generated by the magnetic field coupling between the inductors 21 and 32 smaller than the mutual inductance (+M1) generated by the magnetic field coupling between the inductors 21 and 31.

[0095] The magnitude of the mutual inductance (+M1) and the mutual inductance (+M2) varies depending on the distance D between the inductor 21 and the inductor 31. 31 , the distance D between the inductor 21 and the inductor 32 32 , and the winding axis directions of the inductors 31 and 32.

[0096] This allows the inductance value of common path Pc to be greater than the inductance value of inductor 21, and the inductance value of signal path P1 to be greater than the inductance value of inductor 31. Therefore, the inductance values ​​of inductors 21 and 31 can be reduced by the amount of mutual inductance (+M1), thereby reducing the resistance loss of inductors 21 and 31 and reducing the transmission loss of the signal path for band A. Furthermore, because the mutual inductance (+M1) and the mutual inductance (+M2) can be made different, it becomes possible to set the inductance value of common path Pc separately for transmitting signals for band A and signals for band B.

[0097] In this modification, the ground metal plate 93 is provided on the main surface 70a so as to surround the inductors 21 and 31, but may be provided so as to surround the inductor 32 without surrounding the inductors 21 and 31. The metal member separating the inductors 21 and 31 from the inductor 32 does not have to be the ground metal plate 93, and may be, for example, a circuit element including a conductive member such as an electrode.

[0098] Furthermore, a ground metal plate may be disposed on the main surface 70a to separate the filters 41-45 from the inductors 21 and 31-35. This makes it possible to suppress electromagnetic field coupling between the inductors 21 and 31-35 and the filters 41-45 while ensuring magnetic field coupling between the inductors 21 and 31-35.

[0099] [5. Configuration of High-Frequency Module 1C According to Modification 3] Next, the circuit configuration and pass characteristics of a high-frequency module 1C according to a third modification of the embodiment will be described. FIG. 5A is a circuit configuration diagram of the high-frequency module 1C according to the third modification of the embodiment when receiving band A. FIG. 5B is a circuit configuration diagram of the high-frequency module 1C according to the third modification of the embodiment when receiving band B. FIG. 5C is a circuit configuration diagram of the high-frequency module 1C according to the third modification of the embodiment when receiving band C. As shown in FIGS. 5A to 5C, the high-frequency module 1C includes switches 11 and 12, filters 41 to 45, inductors 21, 31 to 35, capacitors 22 and 23, low-noise amplifiers 51 to 55, antenna connection terminals 101 to 103, and signal output terminals 110 to 150. The high-frequency module 1C may also include a coupler 60 disposed in the common path Pc. The high-frequency module 1C according to this modification differs from the high-frequency module 1 according to the embodiment in the circuit configuration of a low-pass filter 20C. Therefore, in the following, the description of the high-frequency module 1C according to this modification will be omitted for the same components as those of the high-frequency module 1 according to the embodiment, and the description will focus on the different components.

[0100] Inductor 21 is an example of a first inductor, and is connected to a common path Pc that connects common terminals 11a and 12f. More specifically, one end of inductor 21 is connected to common terminal 11a, and the other end is connected to common terminal 12f.

[0101] The capacitor 22 is an example of a first capacitor and is connected between the common path Pc and ground. In the present embodiment, the capacitor 22 is connected to the common path Pc between the inductor 21 and the common terminal 12f, but may be connected to the common path Pc between the inductor 21 and the common terminal 11a.

[0102] The capacitor 23 is an example of a second capacitor, and is connected in parallel to the inductor 21.

[0103] The inductor 21 and the capacitors 22 and 23 form a low-pass filter 20C. Note that the capacitor 22 may be omitted.

[0104] The inductors 21 and 31 are configured to be magnetically coupled together. The inductors 21 and 33 are configured to be magnetically coupled together. The inductors 21 and 32 are configured not to be magnetically coupled together.

[0105] Examples of the configuration of the high-frequency module 1C that realizes the presence or absence of magnetic field coupling between the inductor 21 and the inductors 31 to 33 as described above include the following arrangement configurations A to C. The high-frequency module 1C further includes a module substrate 70 having main surfaces 70a and 70b facing each other.

[0106] (Layout configuration A) Inductors 21 and 31 to 33 are arranged on main surface 70a, with the positive winding axis direction of inductor 21 aligned with the positive winding axis direction of inductor 31, and the positive winding axis direction of inductor 21 aligned with the negative winding axis direction of inductor 33. Distance D between inductors 21 and 31 31 is the distance D between the inductor 21 and the inductor 3232 is smaller than.

[0107] (Layout configuration B) Inductors 21 and 31 to 33 are arranged on main surface 70a, the positive winding axis direction of inductor 21 is aligned with the positive winding axis direction of inductor 31, the positive winding axis direction of inductor 21 is aligned with the negative winding axis direction of inductor 33, and the angle formed by the positive winding axis direction of inductor 21 and the positive winding axis direction of inductor 32 is 90°.

[0108] (Layout configuration C) Inductors 21 and 31-33 are arranged on main surface 70a, with the positive winding axis of inductor 21 aligned with the positive winding axis of inductor 31, and the positive winding axis of inductor 21 aligned with the negative winding axis of inductor 33. Furthermore, a ground metal plate is erected on main surface 70a so as to surround inductors 21, 31, and 33, but not inductor 32.

[0109] Next, the following cases will be described with reference to Figures 5A to 5C: (1) receiving a signal in band A (band A reception mode), (2) receiving a signal in band B (band B reception mode), and (3) simultaneously receiving a signal in band C (band C reception mode) in the high-frequency module 1C.

[0110] First, as shown in FIG. 5A, in (1) Band A reception mode, common terminal 11a and selection terminal 11b are connected, and common terminal 12f and selection terminal 12a are connected. In this circuit state, a Band A signal passes through antenna 2a, switch 11, low-pass filter 20C, switch 12, inductor 31, filter 41, and low-noise amplifier 51, and is output from signal output terminal 110. At this time, a signal flows through inductors 21 and 31, causing inductors 21 and 31 to magnetically couple and generate mutual inductance (+M1). As a result, in low-pass filter 20C, an inductance of +M1 is equivalently added in series to common path Pc, an inductance of -M1 is equivalently added in series to the shunt path connecting common path Pc and capacitor 22, and an inductance of +M1 is equivalently added in series to signal path P1.

[0111] In addition, in (1) Band A reception mode, the signal of Band A is not limited to being received by antenna 2a, but may be received by antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0112] 5B, in (2) Band B reception mode, common terminal 11a is connected to selection terminal 11b, and common terminal 12f is connected to selection terminal 12b. In this circuit state, a Band B signal passes through antenna 2a, switch 11, low-pass filter 20C, switch 12, inductor 32, filter 42, and low-noise amplifier 52, and is output from signal output terminal 120. At this time, a signal flows through inductors 21 and 32, but since inductor 21 and inductor 32 are configured so as not to be magnetically coupled, no mutual inductance occurs between inductor 21 and inductor 32.

[0113] In addition, in (2) Band B reception mode, reception of Band B signals is not limited to being performed by antenna 2a, and Band B signals may be received by antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0114] Next, as shown in FIG. 5C , in (3) Band C reception mode, common terminal 11a and selection terminal 11b are connected, and common terminal 12f and selection terminal 12c are connected. In this circuit state, a Band C signal passes through antenna 2a, switch 11, low-pass filter 20C, switch 12, inductor 33, filter 43, and low-noise amplifier 53 and is output from signal output terminal 130. At this time, a signal flows through inductors 21 and 33, causing inductors 21 and 33 to magnetically couple and generate mutual inductance (−M3). As a result, in low-pass filter 20C, an inductance of −M3 is equivalently added in series to common path Pc, an inductance of +M3 is equivalently added in series to the shunt path connecting common path Pc and capacitor 22, and an inductance of −M3 is equivalently added in series to signal path P3 connecting selection terminal 12c and filter 43.

[0115] In addition, in (3) Band C reception mode, reception of Band C signals is not limited to being performed by antenna 2a, and Band C signals may be received by antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0116] 6 is a graph showing the pass characteristics of the low-pass filter 20C of the high-frequency module 1C according to the third modification of the embodiment. The graph shows the pass characteristics of the low-pass filter 20C in (1) the band A reception mode, (2) the band B reception mode, and (3) the band C reception mode.

[0117] In the Band A receive mode, an equivalent inductor with an inductance of -M1 is added between the common path Pc and the ground, and the resonant circuit including this equivalent inductor causes the frequency f A The first attenuation pole is formed.

[0118] In the case of Band B reception mode, an equivalent inductor generated by magnetic field coupling is not added between the common path Pc and the ground, and the frequency f B The second attenuation pole is formed.

[0119] In the Band C receive mode, an equivalent inductor with an inductance of +M3 is added between the common path Pc and ground, and the resonant circuit including this equivalent inductor generates a frequency f C The third attenuation pole is formed.

[0120] According to this, the magnetic field coupling of inductors 21 and 31 allows an equivalent inductor having a negative inductance (-M1) and no resistance component to be added between common path Pc and capacitor 22, making it possible to generate a steep first attenuation pole. Also, the magnetic field coupling of inductors 21 and 33 allows an equivalent inductor having a positive inductance (+M3) and no resistance component to be added between common path Pc and capacitor 22, making it possible to generate a steep third attenuation pole. This makes it possible to make the attenuation pole generation frequencies different between the magnetic field coupling of inductors 21 and 31 and the magnetic field coupling of inductors 21 and 33.

[0121] For example, in the case where band A is located on the higher frequency side than band B, and band B is located on the higher frequency side than band C, f A >f B >f CThis allows the high-frequency end of the pass band of low-pass filter 20C to be shifted in accordance with the band frequency, thereby reducing the loss of signals in each band. In other words, by magnetically coupling inductor 21 of low-pass filter 20C with inductors 31 to 35 arranged in each signal path, the pass band width and the frequency of the attenuation pole of low-pass filter 20C can be optimized for each signal path for bands A to E.

[0122] Furthermore, in the high-frequency module 1C according to this modification, a common path Pc is also used for multiple signal paths connecting the antennas 2a to 2c with any of the filters 41 to 45, and one low-pass filter 20C is disposed in the common path Pc. As a result, no chip inductors are connected to the path connecting the antenna connection terminal 101 and the switch 11, the path connecting the antenna connection terminal 102 and the switch 11, or the path connecting the antenna connection terminal 103 and the switch 11.

[0123] This allows the low-pass filter 20C to double as a matching circuit for impedance matching between the antennas 2a to 2c and the high-frequency module 1C, thereby enabling the high-frequency module 1C to be made smaller.

[0124] [6. Configuration of High-Frequency Module 1D According to Modification 4] Next, the circuit configuration and pass characteristics of a high-frequency module 1D according to a fourth modification of the embodiment will be described. FIG. 7A is a circuit configuration diagram of the high-frequency module 1D according to the fourth modification of the embodiment during band A transmission. FIG. 7B is a circuit configuration diagram of the high-frequency module 1D according to the fourth modification of the embodiment during band A reception. As shown in FIGS. 7A and 7B, the high-frequency module 1D includes switches 11 and 12, filters 41 and 43 to 46, inductors 21, 31, and 33 to 36, capacitors 22 and 24, low-noise amplifiers 51 and 53 to 55, a power amplifier 56, antenna connection terminals 101 to 103, signal output terminals 120 to 150, and a signal input terminal 160. The high-frequency module 1D may also include a coupler 60 disposed in the common path Pc. The high-frequency module 1D according to this modification differs from the high-frequency module 1 according to the embodiment in the configuration of a low-pass filter 20D and in that a band A transmission circuit is provided instead of a band B reception circuit. Therefore, in the following, a description of the configuration of the high-frequency module 1D according to this modification that is the same as that of the high-frequency module 1 according to the embodiment will be omitted, and the different configuration will be mainly described.

[0125] The signal input terminal 160 is connected to the input terminal of the power amplifier 56. The signal output terminal 120 is connected to the output terminal of the low noise amplifier 51.

[0126] The filter 46 is an example of a first filter, and has a passband that includes the transmission band of Band A. One end of the filter 46 is connected to the inductor 36, and the other end is connected to the output end of the power amplifier 56.

[0127] The filter 41 is an example of a second filter, and has a pass band that includes the reception band of band A. One end of the filter 41 is connected to the inductor 31, and the other end is connected to the input terminal of the low-noise amplifier 51.

[0128] The switch 12 has a common terminal 12f and selection terminals 12a, 12b, 12c, 12d, and 12e. The common terminal 12f is connected to the common terminal 11a via a common path Pc, the selection terminal 12a is connected to an inductor 36, the selection terminal 12b is connected to an inductor 31, the selection terminal 12c is connected to an inductor 33, the selection terminal 12d is connected to an inductor 34, and the selection terminal 12e is connected to an inductor 35.

[0129] The capacitor 24 is connected between the common path Pc and ground.

[0130] Inductor 21 is an example of a first inductor, and is connected to a common path Pc that connects common terminals 11a and 12f. More specifically, one end of inductor 21 is connected to common terminal 11a, and the other end is connected to common terminal 12f.

[0131] The inductor 36 is an example of a first inductor, and is connected to a signal path P1 (first path) that connects the selection terminal 12a and the filter 46. More specifically, one end of the inductor 36 is connected to the selection terminal 12a, and the other end is connected to the filter 46. Note that the inductor 36 may be connected between the signal path P1 and ground.

[0132] The inductor 31 is an example of a second inductor, and is connected to a signal path P2 (second path) that connects the selection terminal 12a and the filter 41. More specifically, one end of the inductor 31 is connected to the selection terminal 12a, and the other end is connected to the filter 41. Note that the inductor 31 may be connected between the signal path P2 and ground.

[0133] The inductor 21 and the capacitors 22 and 24 form a low-pass filter 20D. Note that the capacitors 22 and 24 may be omitted. The inductor 21 may be connected between the common path Pc and ground. If the capacitors 22 and 24 are not provided, the inductor 21 may function as an impedance matching circuit.

[0134] The inductor 21 and the inductor 36 are configured to be magnetically coupled to each other, while the inductor 21 and the inductor 31 are configured not to be magnetically coupled to each other.

[0135] The inductor 36 is connected to a signal path P1 that connects the selection terminal 12a and the filter 46. More specifically, one end of the inductor 36 is connected to the selection terminal 12a, and the other end is connected to the filter 46. The inductor 36 may be connected between the signal path P1 and ground.

[0136] The inductor 31 is connected to a signal path P2 that connects the selection terminal 12b and the filter 41. More specifically, one end of the inductor 31 is connected to the selection terminal 12b, and the other end is connected to the filter 41. The inductor 31 may be connected between the signal path P2 and ground.

[0137] The power amplifier 56 has an output terminal connected to the filter 46 and an input terminal connected to a signal input terminal 160. The low-noise amplifier 51 has an input terminal connected to the filter 41 and an output terminal connected to a signal output terminal 120.

[0138] Examples of the configuration of the high-frequency module 1D that realizes the presence or absence of magnetic field coupling between the inductor 21 and the inductors 31 and 36 as described above include the following arrangement configurations D to F. The high-frequency module 1D further includes a module substrate 70 having main surfaces 70a and 70b facing each other.

[0139] (Deployment configuration D) Inductors 21, 31, and 36 are arranged on main surface 70a, and the positive winding axis direction of inductor 21 is aligned with the negative winding axis direction of inductor 36. 31 is the distance D between the inductor 21 and the inductor 36 36 is greater than.

[0140] (Deployment configuration E) Inductors 21, 31, and 36 are arranged on main surface 70a, the positive winding axis direction of inductor 21 is aligned with the negative winding axis direction of inductor 36, and the angle formed by the positive winding axis direction of inductor 21 and the positive winding axis direction of inductor 31 is 90°.

[0141] (Deployment configuration F) Inductors 21, 31, and 36 are arranged on main surface 70a, with the positive winding axis of inductor 21 aligned with the negative winding axis of inductor 36. Furthermore, a ground metal plate is erected on main surface 70a so as to surround inductors 21 and 36 but not inductor 31.

[0142] Next, (1) the case where a band A signal is transmitted (band A transmission mode) and (2) the case where a band A signal is received (band A reception mode) in the high-frequency module 1D will be described with reference to FIGS. 7A and 7B, respectively.

[0143] 7A, in (1) Band A transmission mode, common terminal 11a and selection terminal 11b are connected, and common terminal 12f and selection terminal 12a are connected. In this circuit state, a Band A signal passes through signal input terminal 160, power amplifier 56, filter 46, inductor 36, switch 12, low-pass filter 20D, and switch 11, and is output from antenna 2a. At this time, a signal flows through inductors 21 and 36, causing inductors 21 and 36 to magnetically couple and generate mutual inductance (-M1). As a result, in low-pass filter 20D, an inductance of -M1 is equivalently added in series to common path Pc, an inductance of +M1 is equivalently added in series to the shunt path connecting common path Pc and capacitor 22, and an inductance of -M1 is equivalently added in series to signal path P1.

[0144] In addition, in (1) Band A transmission mode, the transmission of a Band A signal is not limited to being from antenna 2a, and a Band B signal may be transmitted from antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0145] 7B, in (2) band A reception mode, common terminal 11a and selection terminal 11b are connected, and common terminal 12f and selection terminal 12b are connected. In this circuit state, a band A signal passes through antenna 2a, switch 11, low-pass filter 20D, switch 12, inductor 31, filter 41, and low-noise amplifier 51, and is output from signal output terminal 120. At this time, a signal flows through inductors 21 and 31, but since inductor 21 and inductor 31 are configured so as not to be magnetically coupled, no mutual inductance occurs between inductor 21 and inductor 31.

[0146] In addition, in (2) Band A reception mode, the signal of Band A is not limited to being received by antenna 2a, but may be received by antenna 2b or 2c. In this case, common terminal 11a and selection terminal 11c are connected, or common terminal 11a and selection terminal 11d are connected.

[0147] Next, the circuit configuration of a high-frequency module 500 according to a comparative example, which has a conventional configuration, will be described. FIG. 7C is a circuit configuration diagram of the high-frequency module 500 according to the comparative example during Band A transmission. As shown in the figure, the high-frequency module 500 includes switches 11 and 12, filters 41 and 43 to 46, inductors 21, 25, 31, and 33 to 36, capacitors 22 and 24, low-noise amplifiers 51 and 53 to 55, a power amplifier 56, antenna connection terminals 101 to 103, signal output terminals 120 to 150, and a signal input terminal 160. The high-frequency module 500 according to the comparative example differs from the high-frequency module 1D according to Modification 4 mainly in the configuration of the low-pass filter 520. Therefore, the following description of the high-frequency module 500 according to the comparative example will omit a description of the same components as those of the high-frequency module 1D according to Modification 4 and will focus on the different components.

[0148] The inductor 25 is connected between the common path Pc and the capacitor 22. The inductors 21 and 25 and the capacitors 22 and 24 form a low-pass filter 520.

[0149] The inductor 21 and the inductor 36 are configured so as not to be magnetically coupled to each other, and the inductor 21 and the inductor 31 are configured so as not to be magnetically coupled to each other.

[0150] 7C , in high-frequency module 500, in (1) band A transmission mode, common terminal 11a and selection terminal 11b are connected, and common terminal 12f and selection terminal 12a are connected. In this circuit state, a band A signal passes through signal input terminal 160, power amplifier 56, filter 46, inductor 36, switch 12, low-pass filter 520, and switch 11, and is output from antenna 2a. At this time, inductors 21 and 36 are not magnetically coupled, so no inductance due to the magnetic field coupling of inductors 21 and 36 is added to low-pass filter 520. For this reason, inductor 25 is provided as part of the circuit configuration of high-frequency module 500.

[0151] 8 is a graph showing the pass characteristics of the low-pass filter 20D of the high-frequency module 1D according to the fourth modification of the embodiment and the low-pass filter 520 of the high-frequency module 500 according to the comparative example. The graph shows the pass characteristics of the low-pass filter 20D (520) in (1) the band A transmission mode of the high-frequency module 1D, (2) the band A reception mode of the high-frequency module 1D, and (3) the band A transmission mode and band A reception mode of the high-frequency module 500.

[0152] In the Band A transmission mode, both the high-frequency modules 1D and 500 use the frequency f T In the high-frequency module 500, an LC series resonant circuit is formed by the inductor 25 and the capacitor 22 between the common path Pc and the ground. On the other hand, in the high-frequency module 1D, an LC series resonant circuit is formed by the equivalent inductor (+M1) and the capacitor 22 between the common path Pc and the ground. The equivalent inductor added to the high-frequency module 1D does not have a resistance loss, and therefore the Q value of the LC series resonant circuit can be increased, and therefore the attenuation pole (at frequency f T ) can be made steeper. Accordingly, the high-frequency module 1D can reduce the insertion loss at the high-frequency end of the pass band of the low-pass filter 20D (reduce the so-called shoulder drop) more than the high-frequency module 500.

[0153] Furthermore, in the high-frequency module 1D, the equivalent inductance is not generated during reception, and therefore the insertion loss of the low-pass filter 20D can be reduced compared to the high-frequency module 500 in the band A reception mode.

[0154] In the Band A reception mode of the high-frequency module 1D, the inductors 21 and 32 may be arranged so as to generate a mutual inductance (+M2). This makes it possible to add an equivalent inductor of the mutual inductance (-M2) between the common path Pc and the capacitor 22, thereby further reducing the insertion loss of the low-pass filter 20D.

[0155] [7 Effects etc.] As described above, the high-frequency module 1 according to the embodiment includes the switch 11 having the selection terminal 11b connected to the antenna 2a, the selection terminal 11c connected to the antenna 2b, and the common terminal 11a, the switch 12 having the selection terminals 12a, 12b, and the common terminal 12f, the filters 41 and 42, the inductor 21 connected to the common path Pc connecting the common terminals 11a and 12f, the inductor 31 connected to the signal path P1 connecting the selection terminal 12a and the filter 41, and the inductor 32 connected to the signal path P2 connecting the selection terminal 12b and the filter 42. 31 is the distance D between the inductor 21 and the inductor 32 32 is smaller than.

[0156] According to this, multiple signal paths connecting either antenna 2a or 2b and either filter 41 or 42 also use common path Pc. At this time, inductor 21 and inductor 31 are magnetically coupled to generate a mutual inductance (+M1), and inductor 21 and inductor 32 are magnetically coupled to generate a mutual inductance (+M2) different from the mutual inductance (+M1). By generating such mutual inductance, the inductance value of common path Pc can be made larger than that of inductor 21, the inductance value of signal path P1 can be made larger than that of inductor 31, and the inductance value of signal path P2 can be made larger than that of inductor 32. Therefore, the inductance values ​​of inductors 21 and 31 can be reduced by the amount of mutual inductance (+M1), and the inductance values ​​of inductors 21 and 32 can be reduced by the amount of mutual inductance (+M2), thereby reducing the resistance loss of inductors 21, 31, and 32 and reducing the transmission loss of signals in multiple bands passing through common path Pc and signal paths P1 and P2. Furthermore, because inductor 21 arranged in common path Pc is also used to achieve magnetic field coupling of multiple individual signal paths, the high-frequency module 1 can be made smaller.

[0157] Furthermore, for example, in high-frequency module 1, the positive winding axis direction of inductor 21, the positive winding axis direction of inductor 31, and the positive winding axis direction of inductor 32 are aligned.

[0158] This allows the mutual inductance (+M1) to be greater than the mutual inductance (+M2).

[0159] Furthermore, for example, high-frequency module 1A according to variant example 1 includes switch 11 having selection terminal 11b connected to antenna 2a, selection terminal 11c connected to antenna 2b, and common terminal 11a, switch 12 having selection terminals 12a, 12b and common terminal 12f, filters 41 and 42, inductor 21 connected to common path Pc connecting common terminals 11a and 12f, inductor 31 connected to signal path P1 connecting selection terminal 12a and filter 41, and inductor 32A connected to signal path P2 connecting selection terminal 12b and filter 42, and the angle formed between the positive winding axis direction of inductor 21 and the positive winding axis direction of inductor 31 is smaller than the angle formed between the positive winding axis direction of inductor 21 and the positive winding axis direction of inductor 32A.

[0160] According to this configuration, multiple signal paths connecting either antenna 2a or 2b with either filter 41 or 42 share the common path Pc. In this case, inductor 21 and inductor 31 are magnetically coupled to generate a mutual inductance (+M1), and inductor 21 and inductor 32A are magnetically coupled to generate a mutual inductance (+M2) different from the mutual inductance (+M1). By generating the mutual inductances described above, the inductance of common path Pc can be made larger than that of inductor 21, the inductance of signal path P1 can be made larger than that of inductor 31, and the inductance of signal path P2 can be made larger than that of inductor 32A. This reduces the resistance loss of inductors 21, 31, and 32A, and reduces the transmission loss of signals in multiple bands passing through common path Pc and signal paths P1 and P2. Furthermore, because inductor 21 arranged in common path Pc is also used to individually realize magnetic coupling of multiple signal paths, the high-frequency module 1A can be made smaller.

[0161] Furthermore, for example, in high-frequency module 1A, the positive winding axis direction of inductor 21 and the positive winding axis direction of inductor 31 are aligned, the positive winding axis direction of inductor 21 and the negative winding axis direction of inductor 32 are aligned, and the distance D between inductors 21 and 31 is 31 is the distance D between the inductor 21 and the inductor 32A. 32 is smaller than.

[0162] This allows the mutual inductance (+M1) to be greater than the mutual inductance (-M2).

[0163] For example, a high-frequency module 1B according to variant example 2 includes a switch 11 having a selection terminal 11b connected to antenna 2a, a selection terminal 11c connected to antenna 2b, and a common terminal 11a, a switch 12 having selection terminals 12a, 12b, and a common terminal 12f, filters 41 and 42, an inductor 21 connected to a common path Pc connecting the common terminals 11a and 12f, an inductor 31 connected to a signal path P1 connecting the selection terminal 12a and the filter 41, an inductor 32 connected to a signal path P2 connecting the selection terminal 12b and the filter 42, and a metal member arranged between the inductor 21 and the inductor 32.

[0164] According to this configuration, multiple signal paths connecting either antenna 2a or 2b with either filter 41 or 42 share the common path Pc. In this case, inductor 21 and inductor 31 are magnetically coupled to generate a mutual inductance (+M1), and inductor 21 and inductor 32 are magnetically coupled to generate a mutual inductance (+M2) different from the mutual inductance (+M1). By generating the mutual inductances described above, the inductance of common path Pc can be made larger than that of inductor 21, the inductance of signal path P1 can be made larger than that of inductor 31, and the inductance of signal path P2 can be made larger than that of inductor 32. This reduces the resistance loss of inductors 21, 31, and 32, and reduces the transmission loss of signals in multiple bands passing through common path Pc and signal paths P1 and P2. Furthermore, because inductor 21 arranged in common path Pc is also used to individually realize magnetic coupling of multiple signal paths, the high-frequency module 1B can be made smaller.

[0165] For example, the high-frequency module 1B further includes a module substrate 70 having main surfaces 70a and 70b facing each other, inductors 21, 31, and 32 are arranged on the main surface 70a, and in a plan view of the main surface 70a, the metal member is a ground metal plate 93 erected between the inductors 21 and 31 and the inductor 32.

[0166] This allows the mutual inductance (+M1) to be greater than the mutual inductance (+M2).

[0167] Furthermore, for example, in the high-frequency modules 1, 1A, and 1B, the switches 11 and 12 are included in the semiconductor IC 81, the inductors 21, 31, and 32 are arranged on the main surface 70a, and the semiconductor IC 81 is arranged on the main surface 70b.

[0168] According to this, the inductors 21, 31, and 32 and the switches 11 and 12 are arranged on both sides of the module substrate 70, so that the high-frequency modules 1, 1A, and 1B can be made smaller.

[0169] Furthermore, for example, in the high-frequency modules 1, 1A, and 1B, at least one of the inductors 31 and 32 overlaps with the semiconductor IC 81 when the module substrate 70 is viewed from above.

[0170] This allows the wiring connected to the selection terminal side of the switch 12 to be short, thereby reducing the transmission loss of the high-frequency modules 1, 1A, and 1B.

[0171] Furthermore, for example, in the high-frequency modules 1, 1A, and 1B, when the module substrate 70 is viewed from above, the inductor 21 overlaps with the semiconductor IC 81.

[0172] This allows the wiring connected to the common terminal side of the switch 12 to be short, thereby reducing the transmission loss of the high-frequency modules 1, 1A, and 1B.

[0173] For example, in the high-frequency modules 1, 1A, and 1B, one end of the inductor 21 is connected to the common terminal 11a, the other end of the inductor 21 is connected to the common terminal 12f, and further, a capacitor 22 is connected between the common path Pc and ground.

[0174] In this configuration, inductor 21 and capacitor 22 constitute low-pass filter 20, and a first mutual inductance or a second mutual inductance can be generated by switching the connection of switch 12. This makes it possible to change the passband width, the frequency of the attenuation pole, the amount of attenuation, and the like of low-pass filter 20.

[0175] For example, the high-frequency module 1C according to the third modification further includes a capacitor 23 connected in parallel to the inductor 21.

[0176] This allows a negative mutual inductance (-M1) to be generated between the common path Pc and the capacitor 22 due to the magnetic field coupling of the inductors 21 and 31, and a steep attenuation pole can be generated in the low-pass filter 20C due to LC resonance caused by the mutual inductance (-M1) and the capacitor 22. This allows the magnetic field coupling of the inductors 21 and 31 and the magnetic field coupling of the inductors 21 and 32 to have different frequencies at which attenuation poles are generated.

[0177] Furthermore, for example, in the high-frequency module 1C, when the common terminal 12f and the selection terminal 12a are connected and the common terminal 12f and the selection terminal 12b are not connected, a first attenuation pole (f A ) occurs, and when the common terminal 12f and the selection terminal 12a are disconnected and the common terminal 12f and the selection terminal 12b are connected, a first attenuation pole (f A ) on the lower frequency side of the second attenuation pole (f B ) occurs.

[0178] According to this, by magnetically coupling the inductor 21 of the low-pass filter 20C with the inductors 31 and 32 arranged in the signal paths P1 and P2, respectively, the pass bandwidth and the frequency of the attenuation pole of the low-pass filter 20C can be optimized for each signal path.

[0179] Furthermore, for example, the high-frequency modules 1, 1A, 1B, and 1C further include a coupler 60 disposed in the common path Pc.

[0180] According to this, by placing only one coupler 60 that measures the power of a signal on the common path Pc, the power of signals transmitted through multiple signal paths can be measured, thereby making it possible to reduce the size of the high-frequency modules 1, 1A, 1B, and 1C.

[0181] For example, the high-frequency modules 1, 1A, 1B, and 1C further include an antenna connection terminal 101 connected between the antenna 2a and the selection terminal 11b, and an antenna connection terminal 102 connected between the antenna 2b and the selection terminal 11c, and no chip-shaped inductor is connected to the signal path connecting the antenna connection terminal 101 and the selection terminal 11b, and the signal path connecting the antenna connection terminal 102 and the selection terminal 11c.

[0182] This allows the inductor 21 to serve as both a matching element between the antenna 2a and the high-frequency module 1 (and 1A, 1B, 1C) and a matching element between the antenna 2b and the high-frequency module 1 (and 1A, 1B, 1C), thereby enabling the high-frequency modules 1, 1A, 1B, and 1C to be made smaller.

[0183] Furthermore, for example, in the high-frequency modules 1, 1A, 1B, and 1C, the switch 11 further has a selection terminal 11e that is connected to a diver circuit 9 other than the high-frequency module 1 (and 1A, 1B, and 1C) and can be connected to at least one of the selection terminals 11b and 11c.

[0184] According to this, since no inductor is disposed in the signal path connecting the antennas 2a and 2b and the diver circuit 9, the transmission loss in the signal path can be reduced.

[0185] (Other embodiments, etc.) Although the high-frequency module and communication device according to the present invention have been described above with reference to the embodiments and modifications thereof, the high-frequency module and communication device according to the present invention are not limited to the above-described embodiments and modifications. The present invention also includes other embodiments realized by combining any of the components in the above-described embodiments and modifications, modifications obtained by applying various modifications to the above-described embodiments and modifications that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above-described high-frequency module.

[0186] For example, in the high-frequency modules and communication devices according to the above-described embodiments and modifications, other circuit elements, wiring, etc. may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings.

[0187] The features of the high frequency module described based on the above embodiment will be described below.

[0188] <1> a first switch having a first selection terminal connected to the first antenna, a second selection terminal connected to the second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; a distance between the first inductor and the second inductor being smaller than a distance between the first inductor and the third inductor;

[0189] <2> The positive winding axis direction of the first inductor, the positive winding axis direction of the second inductor, and the positive winding axis direction of the third inductor are aligned. <1> The high-frequency module according to claim 1.

[0190] <3> a first switch having a first selection terminal connected to the first antenna, a second selection terminal connected to the second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; a positive winding axis direction of the first inductor and a positive winding axis direction of the second inductor, the positive angle formed by the positive winding axis direction of the first inductor and the positive winding axis direction of the third inductor being smaller than an angle formed by the positive winding axis direction of the first inductor and the positive winding axis direction of the third inductor;

[0191] <4> a positive winding axis direction of the first inductor and a positive winding axis direction of the second inductor are aligned, a positive winding axis direction of the first inductor and a negative winding axis direction of the third inductor are aligned, a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor; <3> The high-frequency module according to claim 1.

[0192] <5> a first switch having a first selection terminal connected to the first antenna, a second selection terminal connected to the second antenna, and a first common terminal; a second switch having a third selection terminal, a fourth selection terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; a metal member disposed between the first inductor and the third inductor.

[0193] <6> The module further includes a module substrate having a first main surface and a second main surface facing each other, the first inductor, the second inductor, and the third inductor are disposed on the first main surface; In a plan view of the first principal surface, the metal member is a ground metal plate provided upright between the first inductor, the second inductor, and the third inductor. <5> The high-frequency module according to claim 1.

[0194] <7> The module further includes a module substrate having a first main surface and a second main surface facing each other, the first switch and the second switch are included in a first semiconductor IC; the first inductor, the second inductor, and the third inductor are disposed on the first main surface; the first semiconductor IC is disposed on the second main surface; <1> ~ <5> 10. The high-frequency module according to claim 9, wherein

[0195] <8> When the module substrate is viewed from above, at least one of the second inductor and the third inductor overlaps with the first semiconductor IC. <7> The high-frequency module according to claim 1.

[0196] <9> When the module substrate is viewed from above, the first inductor overlaps with the first semiconductor IC. <7> The high-frequency module according to claim 1.

[0197] <10> one end of the first inductor is connected to the first common terminal; the other end of the first inductor is connected to the second common terminal; further comprising a first capacitor connected between the common path and ground; <1> ~ <9> 10. The high-frequency module according to claim 9, wherein

[0198] <11> moreover, a second capacitor connected in parallel with the first inductor; <10> The high-frequency module according to claim 1.

[0199] <12> when the second common terminal and the third selection terminal are connected and the second common terminal and the fourth selection terminal are not connected, a first attenuation pole occurs in the pass characteristic of the common path, When the second common terminal and the third selection terminal are disconnected and the second common terminal and the fourth selection terminal are connected, a second attenuation pole occurs in the pass characteristic of the common path, the second attenuation pole being on a lower frequency side than the first attenuation pole. <11> The high-frequency module according to claim 1.

[0200] <13> further comprising a coupler disposed on the common path. <1> ~ <12> 10. The high-frequency module according to claim 9, wherein

[0201] <14> moreover, a first antenna connection terminal connected between the first antenna and the first selection terminal; a second antenna connection terminal connected between the second antenna and the second selection terminal, a chip-type inductor is not connected to a path connecting the first antenna connection terminal and the first selection terminal and a path connecting the second antenna connection terminal and the second selection terminal; <1> ~ <13> 10. The high-frequency module according to claim 9, wherein

[0202] <15> the first switch further includes an external connection terminal connected to an external circuit other than the high-frequency module and connectable to at least one of the first selection terminal and the second selection terminal. <14> The high-frequency module according to claim 1. [Industrial Applicability]

[0203] The present invention can be widely used as a high-frequency module disposed in the front end of communication devices such as mobile phones. [Explanation of symbols]

[0204] 1, 1A, 1B, 1C, 1D, 500 High Frequency Module 2a, 2b, 2c antennas 3 RF signal processing circuit (RFIC) 4. Communications equipment 9 Diver Circuit 11, 12, 19 switches 11a, 12f common terminal 11b, 11c, 11d, 11e, 12a, 12b, 12c, 12d, 12e selection terminals 20, 20C, 20D, 520 low-pass filters 21, 25, 31, 32, 32A, 33, 34, 35, 36, 39 Inductors 22, 23, 24 Capacitors 41, 42, 43, 44, 45, 46, 49 Filters 51, 52, 53, 54, 55, 59 Low noise amplifier 56 Power Amplifier 60 Coupler 70 Module Board 70a, 70b main surface 81 Semiconductor IC 85, 86 Resin parts 91, 92, 104 External connection terminals 93 Ground metal plate 95 Shield electrode layer 101, 102, 103 Antenna connection terminals 105, 110, 120, 130, 140, 150 signal output terminal 160 signal input terminal P1, P2, P3 signal path Pc common pathway

Claims

1. a first switch having a first selection terminal connected to the first antenna, a second selection terminal connected to the second antenna, and a first common terminal; a second switch having a third select terminal, a fourth select terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor; High frequency module.

2. a positive winding axis direction of the first inductor, a positive winding axis direction of the second inductor, and a positive winding axis direction of the third inductor are aligned with each other; The high frequency module according to claim 1 .

3. a first switch having a first selection terminal connected to the first antenna, a second selection terminal connected to the second antenna, and a first common terminal; a second switch having a third select terminal, a fourth select terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; an angle formed between the positive winding axis direction of the first inductor and the positive winding axis direction of the second inductor is smaller than an angle formed between the positive winding axis direction of the first inductor and the positive winding axis direction of the third inductor; High frequency module.

4. a positive winding axis direction of the first inductor and a positive winding axis direction of the second inductor are aligned, a positive winding axis direction of the first inductor and a negative winding axis direction of the third inductor are aligned, a distance between the first inductor and the second inductor is smaller than a distance between the first inductor and the third inductor; The high frequency module according to claim 3 .

5. a first switch having a first selection terminal connected to the first antenna, a second selection terminal connected to the second antenna, and a first common terminal; a second switch having a third select terminal, a fourth select terminal, and a second common terminal; a first filter and a second filter; a first inductor connected to a common path connecting the first common terminal and the second common terminal; a second inductor connected to a first path connecting the third selection terminal and the first filter; a third inductor connected to a second path connecting the fourth selection terminal and the second filter; a metal member disposed between the first inductor and the third inductor. High frequency module.

6. The module further includes a module substrate having a first main surface and a second main surface facing each other, the first inductor, the second inductor, and the third inductor are disposed on the first main surface; In a plan view of the first main surface, the metal member is a ground metal plate provided upright between the first inductor, the second inductor, and the third inductor. The high frequency module according to claim 5 .

7. The module further includes a module substrate having a first main surface and a second main surface facing each other, the first switch and the second switch are included in a first semiconductor IC; the first inductor, the second inductor, and the third inductor are disposed on the first main surface; the first semiconductor IC is disposed on the second main surface; The high frequency module according to any one of claims 1 to 5.

8. When the module substrate is viewed from above, at least one of the second inductor and the third inductor overlaps with the first semiconductor IC. The high frequency module according to claim 7 .

9. When the module substrate is viewed from above, the first inductor overlaps with the first semiconductor IC. The high frequency module according to claim 7 .

10. one end of the first inductor is connected to the first common terminal; the other end of the first inductor is connected to the second common terminal; further comprising a first capacitor connected between the common path and ground; The high frequency module according to any one of claims 1 to 5.

11. moreover, a second capacitor connected in parallel with the first inductor; The high frequency module according to claim 10.

12. when the second common terminal and the third selection terminal are connected and the second common terminal and the fourth selection terminal are disconnected in the second switch, a first attenuation pole occurs in the pass characteristic of the common path, When the second common terminal and the third selection terminal of the second switch are disconnected and the second common terminal and the fourth selection terminal are connected, a second attenuation pole occurs in the pass characteristic of the common path, the second attenuation pole being located on a lower frequency side than the first attenuation pole. The high frequency module according to claim 11.

13. further comprising a coupler disposed on the common path. The high frequency module according to any one of claims 1 to 5.

14. moreover, a first antenna connection terminal connected between the first antenna and the first selection terminal; a second antenna connection terminal connected between the second antenna and the second selection terminal, a chip-type inductor is not connected to a path connecting the first antenna connection terminal and the first selection terminal and a path connecting the second antenna connection terminal and the second selection terminal; The high frequency module according to any one of claims 1 to 5.

15. The first switch further includes: an external connection terminal connected to an external circuit other than the high-frequency module and connectable to at least one of the first selection terminal and the second selection terminal; The high frequency module according to claim 14.

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