Substrate processing system and substrate processing method

Abstract

To provide a technology that can improve yield.SOLUTION: A substrate processing system according to an embodiment of the present disclosure includes a batch processing unit that processes multiple substrates at once, a single-wafer processing unit that processes substrates one by one, and a control circuit, and the control circuit calculates a batch processing time, including the time required for processing in the batch processing unit, on the basis of recipe information including procedures for executing substrate processing, and selects and executes one or more inspections of the inspection items whose inspection times are less than or equal to the batch processing time, on the basis of correspondence information that associates inspection items and inspection times for the inspection of the single-wafer processing unit.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing system and a substrate processing method. [Background technology]

[0002] A substrate processing system including a batch processing section and a single wafer processing section is known (see, for example, Patent Document 1). The batch processing section performs batch processing, which processes a lot including multiple substrates at once. The single wafer processing section performs single wafer processing, which processes substrates one by one. In the substrate processing system, combined processing, which includes batch processing and single wafer processing, and single wafer processing are performed in parallel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-121571 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that can improve yield. [Means for solving the problem]

[0005] A substrate processing system according to one aspect of the present disclosure includes a batch processing unit that processes multiple substrates at once, a single-wafer processing unit that processes substrates one by one, and a control circuit, wherein the control circuit calculates a batch processing time, including the time required for processing in the batch processing unit, based on recipe information including procedures for executing substrate processing, and selects and executes one or more inspections of the inspection items whose inspection times are less than or equal to the batch processing time, based on correspondence information that associates inspection items and inspection times for the inspection of the single-wafer processing unit. [Effects of the Invention]

[0006] According to the present disclosure, yield can be improved. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a flowchart showing a substrate processing method according to an embodiment. [Figure 3] FIG. 3 is a diagram showing the flow of substrates in the substrate processing method according to the embodiment. [Figure 4] FIG. 4 is a flowchart showing a method for inspecting the substrate processing system of FIG. [Figure 5] FIG. 5 is a diagram showing the flow of substrates in the inspection method of the substrate processing system of FIG. [Figure 6] FIG. 6 is a diagram illustrating an example of recipe information. [Figure 7] FIG. 7 is a diagram illustrating an example of the correspondence information. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Substrate Processing System] A substrate processing system according to an embodiment will be described with reference to Fig. 1. As shown in Fig. 1, the substrate processing system 1 includes a loading / unloading unit 2, a first interface unit 3, a batch processing unit 4, a second interface unit 5, a single wafer processing unit 6, and a control circuit 9.

[0010] The loading / unloading section 2 serves as both a loading section and an unloading section, thereby enabling a reduction in size of the substrate processing system 1. The loading / unloading section 2 includes a load port 21, a stocker 22, a loader 23, and a cassette transport device 24.

[0011] The load port 21 is arranged on the negative side of the X-axis direction of the carry-in / out section 2. Multiple (e.g., four) load ports 21 are arranged along the Y-axis direction. However, there is no particular limit to the number of load ports 21. A cassette C is placed on the load port 21. The cassette C contains multiple (e.g., 25) substrates W and is carried in and out of the load port 21. Inside the cassette C, the substrates W are held horizontally and in the vertical direction at a second pitch P2 (P2 = N × P1) that is N times the first pitch P1. N is a natural number of 2 or more, and is 2 in this embodiment, but may be 3 or more.

[0012] A plurality of stockers 22 (for example, four) are arranged along the Y-axis direction at the center of the load / unload section 2 in the X-axis direction. A plurality of stockers 22 (for example, two) are arranged adjacent to the first interface section 3 along the Y-axis direction on the positive side of the load / unload section 2 in the X-axis direction. The stockers 22 may be arranged in multiple tiers in the vertical direction. The stockers 22 temporarily store cassettes C containing substrates W before cleaning processing, cassettes C emptied after the substrates W have been removed, cassettes C containing test substrates, and cassettes C containing dummy substrates. Examples of test substrates include bare wafers without a pattern on their surface, patterned wafers with a pattern on their surface, and wafers with a temperature sensor. The stockers 22 may include a dedicated stocker for temporarily storing only cassettes C containing test substrates. The stockers 22 may include a dedicated stocker for temporarily storing only cassettes C containing dummy substrates. The number of stockers 22 is not particularly limited.

[0013] The loader 23 is adjacent to the first interface section 3 and is arranged on the positive side of the loading / unloading section 2 in the X-axis direction. A cassette C is placed on the loader 23. The loader 23 is provided with a lid opening / closing mechanism (not shown) for opening and closing the lid of the cassette C. A plurality of loaders 23 may be provided. The loaders 23 may be arranged in multiple stages in the vertical direction.

[0014] The cassette transfer device 24 is, for example, an articulated transfer robot, and transfers the cassette C between the load port 21, the stocker 22, and the loader 23.

[0015] The first interface section 3 is disposed on the positive side of the X-axis direction of the load / unload section 2. The first interface section 3 transports substrates W between the load / unload section 2, the batch processing section 4, and the single wafer processing section 6. The first interface section 3 has a substrate transfer device 31, a lot formation section 32, and a first delivery table 33.

[0016] The substrate transfer device 31 transports substrates W between a cassette C placed on the loader 23, a lot formation unit 32, and a first delivery table 33. The substrate transfer device 31 distributes the substrates W contained in the cassette C placed on the loader 23 between the first delivery table 33 for transporting them to the single wafer processing unit 6 and the lot formation unit 32 for transporting them to the batch processing unit 4. The substrate transfer device 31 is composed of a multi-axis (e.g., six-axis) arm robot and has a substrate holding arm 31a at its tip. The substrate holding arm 31a has multiple holding claws (not shown) that can hold multiple substrates W (e.g., 25 substrates W). The substrate holding arm 31a can assume any position and posture in three-dimensional space while holding substrates W with the holding claws.

[0017] The lot forming section 32 is disposed on the positive side of the X-axis direction of the first interface section 3. The lot forming section 32 holds a plurality of substrates W at a first pitch P1 and forms a lot L.

[0018] The first transfer table 33 is adjacent to the single wafer processing unit 6 and is disposed on the positive side of the first interface unit 3 in the Y-axis direction. The first transfer table 33 includes a first area for placing substrates W before they are processed in the single wafer processing unit 6, and a second area for placing substrates W after they have been processed in the single wafer processing unit 6. The first and second areas are disposed side by side in the vertical direction. The second area is preferably located vertically above the first area. In this case, contamination of the processed substrates due to foreign matter falling from the unprocessed substrates can be prevented. In the first area, multiple substrates W are placed at a second pitch P2. The first area is configured to be able to hold a first number of substrates W. The first number is, for example, 25. The first number is, for example, the same number as the number of substrates W accommodated in the cassette C. In the second area, multiple substrates W are placed at a second pitch P2. The second area is configured to be able to hold a second number of substrates W. The second number is greater than the first number, for example, 50 or 100. The second number is, for example, the same as the number of substrates W constituting lot L. Lot L is composed of substrates W in multiple cassettes C. In the first area, the first delivery table 33 receives substrates W from the substrate transfer device 31 and temporarily stores them until they are delivered to the single wafer processing unit 6. In the second area, the first delivery table 33 receives substrates W from the fourth transport device 61 and temporarily stores them until they are delivered to the load / unload unit 2.

[0019] The batch processing unit 4 is disposed on the positive side of the first interface unit 3 in the X-axis direction. That is, the load / unload unit 2, the first interface unit 3, and the batch processing unit 4 are disposed in this order from the negative side of the X-axis direction toward the positive side of the X-axis direction. The batch processing unit 4 processes a lot L including a plurality of substrates W (for example, 50 or 100 substrates) arranged at a first pitch P1 at a time. One lot L is made up of substrates W in, for example, M cassettes C. M is a natural number equal to or greater than 2. M may be the same natural number as N, or may be a natural number different from N. The batch processing unit 4 has a chemical liquid tank 41, a rinse liquid tank 42, a first transport device 43, a processing tool 44, and a drive device 45.

[0020] The chemical liquid tank 41 and the rinse liquid tank 42 are arranged along the X-axis direction. For example, the chemical liquid tank 41 and the rinse liquid tank 42 are lined up in this order from the positive side of the X-axis direction to the negative side of the X-axis direction. The chemical liquid tank 41 and the rinse liquid tank 42 are also collectively referred to as a processing tank. The number of chemical liquid tanks 41 and rinse liquid tanks 42 is not limited to that shown in FIG. 1. For example, although one set of chemical liquid tank 41 and rinse liquid tank 42 is shown in FIG. 1, multiple sets may be provided.

[0021] The chemical tank 41 stores a chemical in which the lot L is immersed. The chemical is, for example, a phosphoric acid aqueous solution (H3PO4). The phosphoric acid aqueous solution selectively etches and removes the silicon nitride film from the silicon oxide film and the silicon nitride film. The chemical is not limited to a phosphoric acid aqueous solution. For example, DHF (dilute hydrofluoric acid), BHF (a mixture of hydrofluoric acid and ammonium fluoride), dilute sulfuric acid, SPM (a mixture of sulfuric acid, hydrogen peroxide, and water), SC1 (a mixture of ammonia, hydrogen peroxide, and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide, and water), TMAH (a mixture of tetramethylammonium hydroxide and water), a plating solution, or the like may be used. The chemical may be used for a stripping process or a plating process. The number of chemicals is not particularly limited, and multiple chemicals may be used.

[0022] The rinse liquid tank 42 stores a first rinse liquid in which the lot L is immersed. The first rinse liquid is pure water that removes chemicals from the substrate W, and is, for example, DIW (deionized water).

[0023] The first transfer device 43 has a guide rail 43a and a first transfer arm 43b. The guide rail 43a is disposed on the Y-axis negative side of the processing tank. The guide rail 43a extends horizontally (in the X-axis direction) from the first interface unit 3 to the batch processing unit 4. The first transfer arm 43b moves horizontally (in the X-axis direction) along the guide rail 43a. The first transfer arm 43b may move vertically or may rotate about a vertical axis. The first transfer arm 43b transfers lots L in a batch between the first interface unit 3 and the batch processing unit 4.

[0024] The processing tool 44 receives and holds the lot L from the first transport arm 43b. The processing tool 44 holds the plurality of substrates W at a first pitch P1 in the Y-axis direction, and holds each of the plurality of substrates W vertically.

[0025] The driving device 45 moves the processing tool 44 in the X-axis direction and the Z-axis direction. The processing tool 44 immerses the lot L in the chemical liquid stored in the chemical liquid tank 41, then immerses the lot L in the first rinse liquid stored in the rinse liquid tank 42, and then transfers the lot L to the first transfer device 43.

[0026] Although the number of units including the processing tool 44 and the driving device 45 is one in this embodiment, there may be more than one. In the latter case, one unit immerses the lot L in the chemical liquid stored in the chemical liquid tank 41, and another unit immerses the lot L in the first rinse liquid stored in the rinse liquid tank 42. In this case, the driving device 45 only needs to move the processing tool 44 in the Z-axis direction, and does not need to move the processing tool 44 in the X-axis direction.

[0027] The second interface unit 5 is disposed on the positive side of the batch processing unit 4 in the Y-axis direction. The second interface unit 5 transports substrates W between the batch processing unit 4 and the single wafer processing unit 6. The second interface unit 5 has an immersion tank 51, a second transport device 52, a third transport device 53, and a second delivery table 54.

[0028] The immersion tank 51 is disposed outside the movement range of the first transport arm 43b. For example, the immersion tank 51 is disposed at a position offset toward the positive side of the Y-axis direction relative to the processing tank. The immersion tank 51 stores a second rinse liquid in which the lot L is immersed. The second rinse liquid is, for example, DIW (deionized water). The substrate W is held in the second rinse liquid until it is lifted up from the second rinse liquid by the third transport device 53. Because the substrate W is located below the liquid surface of the second rinse liquid, the surface tension of the second rinse liquid does not act on the substrate W, preventing the concave-convex pattern of the substrate W from collapsing.

[0029] The second transfer device 52 has a Y-axis driving device 52a, a Z-axis driving device 52b, and a second transfer arm 52c.

[0030] The Y-axis drive device 52a is disposed on the positive side of the X-axis direction of the second interface unit 5. The Y-axis drive device 52a extends horizontally (in the Y-axis direction) from the second interface unit 5 to the batch processing unit 4. The Y-axis drive device 52a moves the Z-axis drive device 52b and the second transfer arm 52c in the Y-axis direction. The Y-axis drive device 52a may include a ball screw.

[0031] The Z-axis driving device 52b is movably attached to the Y-axis driving device 52a. The Z-axis driving device 52b moves the second transfer arm 52c in the Z-axis direction. The Z-axis driving device 52b may include a ball screw.

[0032] The second transfer arm 52c is movably attached to the Z-axis driver 52b. The second transfer arm 52c receives and holds the lot L from the first transfer arm 43b. The second transfer arm 52c holds multiple substrates W in the Y-axis direction at a first pitch P1, and holds each of the multiple substrates W in the vertical direction. The second transfer arm 52c is moved in the Y-axis direction and the Z-axis direction by the Y-axis driver 52a and the Z-axis driver 52b. The second transfer arm 52c is configured to be movable between multiple positions including a delivery position, an immersion position, and a standby position.

[0033] The transfer position is a position where the first transfer arm 43b and the second transfer arm 52c transfer the lot L. The transfer position is on the negative side in the Y axis direction and the positive side in the Z axis direction.

[0034] The immersion position is a position where the lot L is immersed in the immersion tank 51. The immersion position is a position on the positive side in the Y axis direction and on the negative side in the Z axis direction relative to the delivery position.

[0035] The standby position is a position where the second transport arm 52c waits when the lot L is not being transferred or immersed in the immersion tank 51. The standby position is directly below the transfer position (negative side in the Z axis direction) and does not interfere with the movement of the first transport arm 43b. In this case, the second transport arm 52c can move to the transfer position simply by moving upward (positive side in the Z axis direction), thereby improving throughput. The standby position may be the same position as the immersion position. In this case, particles that may be generated by the operation of the first transport device 43 can be prevented from adhering to the second transport arm 52c. The standby position may be a position directly above the immersion position (positive side in the Z axis direction). In this way, by setting the standby position at a position different from the transfer position, contact between the first transport arm 43b and the second transport arm 52c can be prevented.

[0036] The second transfer device 52 moves the second transfer arm 52c to the immersion position or the standby position while the first transfer device 43 is operating, thereby preventing contact between the first transfer arm 43b and the second transfer arm 52c.

[0037] The third transfer device 53 is a multi-axis (e.g., six-axis) arm robot having a third transfer arm 53a at its tip. The third transfer arm 53a has holding claws (not shown) capable of holding one substrate W. The third transfer arm 53a can assume any position and posture in three-dimensional space while holding the substrate W with the holding claws. The third transfer device 53 transfers the substrate W between the second transfer arm 52c, which is in the immersion position, and the second transfer table 54. At this time, the immersion tank 51 is positioned outside the movement range of the first transfer arm 43b, so the first transfer arm 43b and the third transfer arm 53a do not interfere with each other. This allows one of the first transfer device 43 and the third transfer device 53 to operate independently, regardless of the operating state of the other. Therefore, the first transfer device 43 and the third transfer device 53 can be operated at any timing, thereby shortening the time required to transport the substrate W. As a result, the productivity of the substrate processing system 1 is improved.

[0038] The second delivery stage 54 is adjacent to the single wafer processing unit 6 and is arranged on the negative side of the second interface unit 5 in the X-axis direction. The second delivery stage 54 receives the substrate W from the third transfer device 53 and temporarily stores it until it is transferred to the single wafer processing unit 6. That is, the substrate W taken out of the immersion bath 51 is placed on the second delivery stage 54. It is preferable that the surface of the substrate W placed on the second delivery stage 54 is wet with, for example, the second rinse liquid. In this case, the surface tension of the second rinse liquid does not act on the substrate W, and collapse of the concave-convex pattern of the substrate W can be suppressed. A plurality of substrates W (for example, two) are placed on the second delivery stage 54.

[0039] The single wafer processing unit 6 is disposed on the negative side of the second interface unit 5 in the X-axis direction and on the positive side of the load / unload unit 2, the first interface unit 3, and the batch processing unit 4 in the Y-axis direction. The single wafer processing unit 6 processes substrates W one by one. The single wafer processing unit 6 has a fourth transfer device 61, a liquid processing device 62, and a drying device 63.

[0040] The fourth transfer device 61 has a guide rail 61a and a fourth transfer arm 61b. The guide rail 61a is arranged on the Y-axis negative side of the single wafer processing unit 6. The guide rail 61a extends horizontally (in the X-axis direction) in the single wafer processing unit 6. The fourth transfer arm 61b moves horizontally (in the X-axis direction) and vertically along the guide rail 61a and rotates about a vertical axis. The fourth transfer arm 61b transfers substrates W between the second transfer table 54, the liquid processing device 62, the drying device 63, and the first transfer table 33. The number of fourth transfer arms 61b may be one or more. In the latter case, the fourth transfer device 61 transfers multiple substrates W (for example, five) at a time.

[0041] The liquid processing device 62 is disposed on the positive side of the X-axis direction and the positive side of the Y-axis direction of the single wafer processing device 6. The liquid processing device 62 is a single wafer processing device, and processes substrates W one by one with a processing liquid. The liquid processing device 62 is disposed in multiple stages (for example, three stages) in the vertical direction (Z-axis direction). This allows multiple substrates W to be processed simultaneously with the processing liquid. There may be multiple processing liquids, and for example, pure water such as DIW and a drying liquid having a surface tension lower than that of pure water. The drying liquid may be, for example, alcohol such as IPA (isopropyl alcohol).

[0042] The drying device 63 is disposed adjacent to the liquid processing device 62 on the negative side in the X-axis direction. In this case, the end face of the single wafer processing device 6 on the positive side in the Y-axis direction can be disposed flush or approximately flush with the end face of the second interface unit 5 on the positive side in the Y-axis direction. This results in almost no dead space, thereby reducing the footprint of the substrate processing system 1. In contrast, if the drying device 63 is disposed adjacent to the liquid processing device 62 on the positive side in the Y-axis direction, the end face of the single wafer processing device 6 on the positive side in the Y-axis direction protrudes beyond the end face of the second interface unit 5 on the positive side in the Y-axis direction, which may result in dead space. The drying device 63 is a single wafer processing device and dries each substrate W one by one with a supercritical fluid. The drying devices 63 are disposed in multiple stages (e.g., three stages) in the vertical direction. This allows multiple substrates W to be dried simultaneously.

[0043] Both the liquid processing apparatus 62 and the drying apparatus 63 do not have to be of the single wafer type; the liquid processing apparatus 62 may be of the single wafer type and the drying apparatus 63 of the batch type. The drying apparatus 63 may dry a plurality of substrates W all at once using a supercritical fluid. The number of substrates W processed all at once in the drying apparatus 63 may be equal to or greater than the number of substrates W processed all at once in the liquid processing apparatus 62, but may also be less. Apparatus other than the liquid processing apparatus 62 and the drying apparatus 63 may be arranged in the single wafer processing apparatus 6.

[0044] The control circuit 9 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the substrate processing system 1. The control circuit 9 controls the operation of the substrate processing system 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92.

[0045] The control circuit 9 includes electronic circuits such as a CPU, a field programmable gate array (FPGA), or an application specific integrated circuit (ASIC). The control circuit 9 executes various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0046] [Substrate Processing Method] A substrate processing method according to an embodiment will be described with reference to Figures 2 and 3. The processing shown in Figure 2 is performed under the control of a control circuit 9.

[0047] First, a cassette C containing a plurality of substrates W is loaded into the loading / unloading section 2 and placed on the load port 21. The substrates W are, for example, product wafers. Inside the cassette C, the substrates W are held horizontally and vertically at a second pitch P2 (P2 = N × P1). N is a natural number of 2 or more, and is 2 in this embodiment, but may be 3 or more.

[0048] Next, the cassette transport device 24 transports the cassette C from the load port 21 to the loader 23 (arrow F1 in FIG. 3). When the cassette C is transported to the loader 23, the lid of the cassette C is opened by the lid opening / closing mechanism.

[0049] Next, the control circuit 9 controls each part of the substrate processing system 1 to perform the process shown in Fig. 2. The control circuit 9 controls each part of the substrate processing system 1 to perform the process shown in Fig. 2 every time a cassette C is placed on the loader 23.

[0050] First, the control circuit 9 controls each part of the substrate processing system 1 to transport the substrates W accommodated in the cassette C to the batch processing part 4 (step S21 in FIG. 2). Specifically, the substrate transfer device 31 receives the substrates W accommodated in the cassette C and transports them to the lot formation part 32 (arrow F2 in FIG. 3).

[0051] Next, the lot formation unit 32 holds multiple substrates W at a first pitch P1 (P1 = P2 / N) to form a lot L (step S22 in FIG. 2). One lot L is made up of, for example, M cassettes C of substrates W. Because the pitch of the substrates W narrows from the second pitch P2 to the first pitch P1, the number of substrates W to be processed at one time can be increased. Next, the first transport device 43 receives the lot L from the lot formation unit 32 and transports it to the processing tool 44 (arrow F3 in FIG. 3).

[0052] Next, the processing tool 44 descends from above the chemical liquid tank 41, immerses the lot L in the chemical liquid, and performs chemical processing (step S23 in FIG. 2). Thereafter, the processing tool 44 rises to lift the lot L out of the chemical liquid, and then moves horizontally (to the negative side in the X-axis direction) toward above the rinse liquid tank 42 (arrow F4 in FIG. 3).

[0053] Next, the processing tool 44 descends from above the rinse liquid tank 42, immerses the lot L in the first rinse liquid, and performs rinse liquid processing (step S23 in FIG. 2). Thereafter, the processing tool 44 ascends to lift the lot L out of the first rinse liquid. Next, the first transfer device 43 receives the lot L from the processing tool 44 and transfers it to the second transfer device 52.

[0054] Next, the second transfer arm 52c of the second transfer device 52 moves horizontally (positive side in the Y-axis direction) and descends from above the immersion tank 51 to immerse the lot L in the second rinse liquid (step S24 in FIG. 2, arrow F5 in FIG. 3). The multiple substrates W in the lot L are held in the second rinse liquid until they are lifted up from the second rinse liquid by the third transfer device 53. Because the substrates W are present below the surface of the second rinse liquid, the surface tension of the second rinse liquid does not act on the substrates W, preventing the concave-convex pattern of the substrates W from collapsing.

[0055] Next, the third transfer device 53 transfers the substrates W of the lot L held by the second transfer arm 52c in the second rinse liquid to the second transfer table 54 (arrow F6 in FIG. 3). The third transfer device 53 transfers the substrates W one by one to the second transfer table 54.

[0056] Next, the fourth transfer device 61 receives the substrate W from the second delivery table 54 and transfers it to the liquid treatment device 62 (arrow F7 in FIG. 3).

[0057] Next, the liquid processing device 62 processes the substrates W one by one with a liquid (step S25 in FIG. 2). There may be multiple liquids, for example, pure water such as DIW and a drying liquid having a lower surface tension than pure water. The drying liquid may be, for example, alcohol such as IPA. The liquid processing device 62 supplies the pure water and the drying liquid in this order onto the upper surface of the substrate W to form a liquid film of the drying liquid.

[0058] Next, the fourth transfer device 61 receives the substrate W from the liquid treatment device 62 and holds the substrate W horizontally with the film of drying liquid facing upward. The fourth transfer device 61 transfers the substrate W from the liquid treatment device 62 to the drying device 63 (arrow F8 in FIG. 3).

[0059] Next, the drying device 63 dries the substrates W one by one with a supercritical fluid (step S25 in FIG. 2). The drying liquid can be replaced with the supercritical fluid, and collapse of the uneven pattern on the substrate W due to the surface tension of the drying liquid can be suppressed. Since the supercritical fluid requires a pressure-resistant container, single-wafer processing is performed rather than batch processing in order to reduce the size of the pressure-resistant container.

[0060] In this embodiment, the drying apparatus 63 is of a single-wafer type, but as described above, it may be of a batch type. The batch-type drying apparatus 63 dries multiple substrates W on which a liquid film has been formed all at once with a supercritical fluid. While the single-wafer type drying apparatus 63 has one transport arm for holding the substrates W, the batch-type drying apparatus 63 has multiple transport arms.

[0061] Furthermore, although the drying apparatus 63 of this embodiment dries the substrate W with a supercritical fluid, the drying method is not particularly limited. Any drying method that can prevent the concavo-convex pattern of the substrate W from collapsing may be used, for example, spin drying, scan drying, or water-repellent drying. In spin drying, the substrate W is rotated and the liquid film is shaken off from the substrate W by centrifugal force. In scan drying, the substrate W is rotated while the supply position of the drying liquid is moved from the center of the substrate W toward the periphery of the substrate W, and the liquid film is shaken off from the substrate W by centrifugal force. In scan drying, the supply position of a drying gas such as N2 gas may also be moved from the center of the substrate W toward the periphery of the substrate W to follow the supply position of the drying liquid.

[0062] Next, the fourth transfer device 61 receives the substrate W from the drying device 63 and transfers it to the first delivery table 33 (arrow F9 in FIG. 3).

[0063] Next, the substrate transfer device 31 receives the substrate W from the first delivery table 33 and stores it in the cassette C placed on the loader 23 (step S26 in FIG. 2, arrow F10 in FIG. 3).

[0064] Next, the cassette transport device 24 transports the cassette C from the loader 23 to the load port 21 (arrow F11 in FIG. 3). The cassette C transported to the load port 21 is transported from the loader / unloader 2 with multiple substrates W stored therein. The cassette transport device 24 may transport the cassette C from the loader 23 to the stocker 22 and temporarily store it in the stocker 22.

[0065] [Method for inspecting a substrate processing system] An inspection method for the substrate processing system 1 according to the embodiment will be described with reference to Figures 4 to 7. The process shown in Figure 4 is performed under the control of the control circuit 9. In the process shown in Figure 4, the state of the single-wafer processing unit 6 is diagnosed. The process shown in Figure 4 is performed, for example, while a plurality of substrates W are being processed in the batch processing unit 4.

[0066] First, the control circuit 9 calculates the batch processing time based on the recipe information, and then selects one or more inspections of inspection items whose inspection time is equal to or less than the batch processing time based on correspondence information that associates the inspection items with the inspection times (S41 in FIG. 4). The correspondence information may include a priority associated with the inspection items. In this case, the control circuit 9 may select and execute the inspections of the inspection items based on the priority and the inspection time.

[0067] The recipe information includes a procedure for processing the substrate W. The recipe information includes, for example, a step number, a process type, and a step time, as shown in FIG. 6. The process type and step time are associated with the step number. The step numbers include step S21, step S22, step S23, step S24, step S25, and step S26. The process types include unloading, lot formation, batch processing, immersion, single wafer processing, and storage. The step times include time t1, time t2, time t3, time t4, time t5, and time t6. The recipe information is prepared for each product specification, for example. The product specification includes, for example, the number of stacked cells in a NAND flash memory with a three-dimensional cell structure. For example, the greater the number of stacked cells, the longer the time t3 of the batch processing in step S23.

[0068] The batch processing time includes the time required for processing by the batch processing unit 4. In the example of Fig. 6, the time required for processing by the batch processing unit 4 is time t3. Time t3 includes the time from when chemical liquid processing on lot L is started in the batch processing unit 4 to when rinse liquid processing on lot L is completed. Time t3 may also include the time from when the first transport device 43 receives lot L from the lot formation unit 32 to when it transfers lot L to the processing tool 44.

[0069] The batch processing time may include the time required for lot formation. In this case, the inspection time of the single wafer processing unit 6 can be extended. In the example of FIG. 6, the time required for lot formation is time t2. Time t2 includes the time required for the lot formation unit 32 to form the lot L.

[0070] The batch processing time may include the time for immersing the lot L in the immersion tank 51. In this case, the inspection time of the single wafer processing unit 6 can be extended. In the example of Fig. 6, the time for immersing the lot L in the immersion tank 51 is time t4. Time t4 includes the time from when the second transfer device 52 receives the lot L to when the third transfer device 53 lifts the first substrate W of the lot L out of the second rinse liquid.

[0071] Correspondence information is prepared, for example, for each type of process. The type of process is the type of processing performed on multiple substrates W being processed in the batch processing unit 4. The process includes, for example, process I, process II, and process III, as shown in FIG. 7. In process I, the correspondence information includes an inspection item, an inspection time, and a priority. The inspection time and priority are associated with the inspection item. In process II and process III, similar to process I, the correspondence information includes an inspection item, an inspection time, and a priority. Process II and process III may include inspection items, inspection times, and priorities that are different from those in process I.

[0072] The inspection items include inspection items for the single wafer processing unit 6. In the example of FIG. 7, the inspection items include inspection A, inspection B, inspection C, and inspection D. The inspection time is the time required to perform the inspection of the corresponding inspection item. In the example of FIG. 7, the inspection time includes 1.0 hour, 0.5 hour, 1.0 hour, and 0.5 hour. The priority indicates the inspection priority of the corresponding inspection item. In the example of FIG. 7, the priority includes 1, 2, 3, and 4. The priority numbers indicate decreasing priority in the order of 1, 2, 3, and 4.

[0073] For example, if the type of process processing is process processing I and the batch processing time is 2.5 hours, the control circuit 9 selects one or more inspection items in descending order of priority so that the total inspection time is 2.5 hours or less. That is, the control circuit 9 selects inspection A, inspection B, and inspection C. For example, if the type of process processing is process processing I and the batch processing time is 3.0 hours, the control circuit 9 selects one or more inspection items in descending order of priority so that the total inspection time is 3.0 hours or less. That is, the control circuit 9 selects inspection A, inspection B, inspection C, and inspection D.

[0074] The inspection items include, for example, a particle inspection, a transport particle inspection, a pattern collapse inspection, a temperature inspection, and a dummy process. The inspection items may further include other inspections.

[0075] The particle inspection is performed using a particle inspection substrate as the inspection substrate. The particle inspection substrate is, for example, a bare wafer with no pattern on its surface. The particle inspection includes diagnosing the state of the drying device 63 based on the number of particles on the bare wafer, which changes as the bare wafer is processed in the drying device 63. For example, the control circuit 9 calculates the difference between the number of particles on the bare wafer after processing in the drying device 63 and the number of particles on the bare wafer before processing in the drying device 63, and diagnoses the drying device 63 as abnormal if the difference is greater than a threshold value. The number of particles can be measured, for example, by a wafer defect inspection device provided separately from the substrate processing system 1.

[0076] The transport particle inspection is performed using a particle inspection substrate as the inspection substrate, similar to the particle inspection. The particle inspection substrate is, for example, a bare wafer with no pattern on its surface. The transport particle inspection includes diagnosing the state of the fourth transport device 61 based on the number of particles on the bare wafer, which changes as the bare wafer is transported to the fourth transport device 61. For example, the control circuit 9 calculates the difference between the number of particles on the bare wafer repeatedly transported by the fourth transport device 61 and the number of particles on the bare wafer before being transported by the fourth transport device 61. Next, if the difference is greater than a threshold, the control circuit 9 diagnoses that the fourth transport device 61 is abnormal. The number of particles can be measured, for example, by a wafer defect inspection device provided separately from the substrate processing system 1.

[0077] The pattern collapse inspection is performed using a collapse inspection substrate as the inspection substrate. The collapse inspection substrate is, for example, a patterned wafer having a pattern on its surface. The patterned wafer is, for example, a wafer having the same pattern as a product wafer on its surface. The pattern is, for example, an STI (Shallow Trench Isolation) pattern. The pattern may also be a pillar pattern. The pattern collapse inspection includes diagnosing the state of the drying device 63 based on the state of the pattern on the bare wafer that changes when the patterned wafer is processed in the drying device 63. For example, the control circuit 9 calculates the number and rate of pattern collapses caused by processing the patterned wafer in the drying device 63 based on a surface image of the patterned wafer after processing in the drying device 63 and a surface image of the patterned wafer before processing in the drying device 63. Next, the control circuit 9 diagnoses that the drying device 63 is abnormal if the calculated number and rate of pattern collapses are greater than a threshold. The surface image of the patterned wafer can be acquired, for example, by an image inspection device provided separately from the substrate processing system 1. The image inspection device is, for example, a scanning electron microscope (SEM).

[0078] The temperature inspection is performed using a temperature inspection substrate as the inspection substrate. The temperature inspection substrate is, for example, a sensor-equipped wafer having a temperature sensor. The sensor-equipped wafer may have multiple temperature sensors within the wafer surface. The temperature sensor is, for example, a wireless temperature sensor. In this case, the temperature sensor can wirelessly transmit the detected temperature to the control circuit 9. The temperature inspection includes diagnosing the condition of the drying device 63 based on the temperature detected by the temperature sensor of the sensor-equipped wafer carried into the drying device 63. The temperature inspection is performed with the interior of the drying device 63 at normal pressure. In this case, abnormalities in sealing materials such as O-rings provided in the drying device 63 can be detected.

[0079] The dummy processing is performed using dummy substrates as test substrates, and includes a process of passing a large number of dummy substrates through the drying device 63 to increase the cleanliness of the drying device 63.

[0080] In the correspondence information shown in FIG. 7, for example, inspection A is a dummy process, inspection B is a particle inspection, inspection C is a pattern collapse inspection, and inspection D is a temperature inspection.

[0081] Next, the control circuit 9 executes inspection of one or more selected inspection items. At the time of starting the inspection, for example, a cassette C containing the inspection substrates to be used for the inspection of each inspection item, the various conditions of which (for example, the number of particles, surface image) have been measured in advance before being processed in the single-wafer processing unit 6, may be stored in advance in the stocker 22. In this case, the time required for each inspection can be shortened. If the cassette C containing the inspection substrates is not in the stocker 22, the cassette C containing the inspection substrates is carried in from the load port 21.

[0082] When performing inspections of one or more selected inspection items, the control circuit 9 may change the order of the inspections of the selected one or more inspection items. For example, the control circuit 9 performs dummy processing among the inspections of one or more inspection items last. In this case, when the multiple substrates W processed in the batch processing unit 4 are processed in the drying device 63, the drying device 63 will be in a highly clean state.

[0083] First, the control circuit 9 controls each part of the substrate processing system 1 to transport the substrates for testing housed in the cassette C to the single wafer processing unit 6 (step S42 in FIG. 4). Specifically, the cassette transport device 24 transports the cassette C housing the substrates for testing from the stocker 22 to the loader 23 (arrow G1 in FIG. 5). When the cassette C is transported to the loader 23, the lid of the cassette C is opened by the lid opening / closing mechanism. Next, the substrate transfer device 31 receives the substrates for testing housed in the cassette C and transports them to the first delivery table 33 (arrow G2 in FIG. 5). Next, the fourth transport device 61 receives the substrates for testing from the first delivery table 33 and transports them to the drying device 63 (arrow G3 in FIG. 5).

[0084] Next, the control circuit 9 controls each part of the substrate processing system 1 so that the test substrate is processed in the single wafer processing unit 6 (step S43 in FIG. 4). Specifically, the drying device 63 performs a predetermined process on the test substrate. The predetermined process may be the same as the process of drying the substrate W with a supercritical fluid in step S25 of the substrate processing method described above.

[0085] Next, the control circuit 9 controls each part of the substrate processing system 1 to transport the test substrate processed in the single-wafer processing unit 6 to the cassette C (step S44 in FIG. 4). Specifically, the fourth transport device 61 receives the test substrate from the drying device 63 and transports it to the first delivery table 33 (arrow G4 in FIG. 5). Next, the substrate transfer device 31 receives the test substrate from the first delivery table 33 and stores it in the cassette C placed on the loader 23 (arrow G5 in FIG. 5). Next, the cassette transport device 24 transports the cassette C from the loader 23 to the load port 21 (arrow G6 in FIG. 5). The cassette C transported to the load port 21 is transported from the carry-in / out unit 2 with the test substrate stored therein. The unloaded inspection substrate is transported to an inspection device (e.g., a wafer defect inspection device, an image inspection device) provided separately from the substrate processing system 1, and various conditions after processing (e.g., the number of particles, surface images) are measured (step S45 in Figure 4).

[0086] Next, the control circuit 9 diagnoses the state of the single wafer processing unit 6 based on various states of the test substrate before processing and various states of the test substrate after processing (step S46 in FIG. 4). The control circuit 9 may diagnose the state of the single wafer processing unit 6 using a machine learning model. The state of the single wafer processing unit 6 includes, for example, the state of the drying device 63. The state of the single wafer processing unit 6 may also include the state of the fourth transport device 61. The state of the single wafer processing unit 6 may also include the state of the liquid processing device 62.

[0087] When the control circuit 9 diagnoses that the state of the drying apparatus 63 is abnormal, it may disable the drying apparatus 63 diagnosed as abnormal. The control circuit 9 may change the transfer schedule so that the substrates W are not transported to the disabled drying apparatus 63. The transfer schedule is a chronological list of the transfer destinations and transfer orders of each substrate W. When the control circuit 9 changes the transfer schedule, it may recalculate the estimated time at which processing of multiple substrates W in the substrate processing system 1 will be completed, and transmit the recalculated estimated time to a host computer or the like that can communicate with the control circuit 9.

[0088] When the control circuit 9 diagnoses that the status of the drying device 63 is abnormal, it may notify the administrator of the substrate processing system 1 of information identifying the drying device 63 diagnosed as abnormal. In this case, the administrator can perform maintenance work, such as replacing parts of the drying device 63 diagnosed as abnormal. This reduces the time required to restore the drying device 63 diagnosed as abnormal. When the maintenance work on the drying device 63 diagnosed as abnormal is completed, the control circuit 9 may control each component of the substrate processing system 1 to transport an inspection substrate to the drying device 63 for inspection while multiple substrates W are being processed in the batch processing unit 4 and the single-wafer processing unit 6. In this case, when the drying device 63 on which maintenance work has been performed is diagnosed as normal, the control circuit 9 may change the drying device 63 from unavailable to available.

[0089] When the processes from step S41 to step S46 are completed, the control circuit 9 controls each part of the substrate processing system 1 so that the single wafer processing unit 6 starts processing the plurality of substrates W processed in the batch processing unit 4.

[0090] When the processing of the plurality of substrates W in the single-wafer processing section 6 is completed, the control circuit 9 may generate data that associates the diagnosis result of the state of the single-wafer processing section 6 in step S46 with the yield of the plurality of substrates W processed in the single-wafer processing section 6 after the diagnosis. The control circuit 9 may store the generated data in the storage section 92. The control circuit 9 may use the generated data for training the machine learning model used in step S46.

[0091] Incidentally, several hours may pass between the start of processing of a plurality of substrates W in the batch processing unit 4 and the start of processing in the single wafer processing unit. For this reason, even if each device in the single wafer processing unit 6 is normal before the start of processing of a plurality of substrates W in the batch processing unit 4, an abnormality may occur between the start of processing of a plurality of substrates W in the batch processing unit 4 and the start of processing in the single wafer processing unit 6. If an abnormality in the device cannot be detected by a sensor or the like, the substrates W will be processed in a device in an abnormal state, resulting in a decrease in yield.

[0092] In contrast, the substrate processing system 1 according to the embodiment includes a batch processing unit 4, a single-wafer processing unit 6, and a control circuit 9. The control circuit 9 calculates the batch processing time based on recipe information. Based on correspondence information associating inspection items with inspection times for the single-wafer processing unit 6, the control circuit 9 selects and executes one or more inspections for inspection items whose inspection time is equal to or shorter than the batch processing time. In this case, inspections can be executed immediately before the plurality of substrates W to be processed in the batch processing unit 4 are processed in the single-wafer processing unit 6, within a time that does not exceed the batch processing time, and inspections for inspection items that are likely to affect yield reduction can be executed with priority. Therefore, any device diagnosed as abnormal while the plurality of substrates W are being processed in the batch processing unit 4 can be disabled. As a result, productivity can be maintained while yield is improved.

[0093] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0094] 1. Substrate Processing System 4 Batch Processing Unit 6 Single wafer processing section 9 Control Circuit W substrate

Claims

1. a batch processing unit that processes a plurality of substrates at once; a single wafer processing section for processing substrates one by one; a control circuit; Equipped with The control circuit calculating a batch processing time including a time required for processing in the batch processing unit based on recipe information including a procedure for executing substrate processing; selecting and executing one or more inspections of the inspection items whose inspection time is equal to or less than the batch processing time based on correspondence information in which inspection items and inspection times of the inspections for the single wafer processing unit are associated with each other; To execute Substrate processing system.

2. the inspection is performed during processing of a plurality of the substrates in the batch processing unit. The substrate processing system of claim 1 .

3. a loading / unloading section for loading / unloading a cassette containing a substrate for testing; The test is transporting the substrates for testing housed in the cassette to the single-substrate processing section; processing the test substrate in the single-substrate processing section; transporting the test substrate processed in the single-substrate processing unit to the cassette; inspecting the test substrate transported to the cassette; Including, The substrate processing system of claim 1 .

4. the test substrate is a bare wafer having no pattern on its surface, the inspection includes diagnosing a state of the single wafer processing unit based on the number of particles adhering to the bare wafer. The substrate processing system according to claim 3 .

5. the test substrate is a patterned wafer having a pattern on its surface, the inspection includes diagnosing a state of the single wafer processing unit based on a state of the pattern of the pattern wafer. The substrate processing system according to claim 3 .

6. the test substrate is a sensor-equipped wafer having a temperature sensor, the inspection includes diagnosing a state of the single wafer processing unit based on a temperature detected by the sensor-equipped wafer. The substrate processing system according to claim 3 .

7. an interface unit that transports the substrate between the batch processing unit and the single wafer processing unit; the interface unit has an immersion tank in which the plurality of substrates processed in the batch processing unit are immersed in a rinse liquid and kept waiting; the batch processing time includes a time for waiting the plurality of substrates in the immersion tank. The substrate processing system according to claim 1 .

8. the correspondence information includes a priority associated with the examination item, the control circuit selects and executes the test of the test item based on the priority. The substrate processing system according to claim 1 .

9. the control circuit changes a transport schedule for the plurality of substrates to be processed in the batch processing unit based on the result of the inspection. The substrate processing system according to claim 1 .

10. the single-wafer processing unit has a drying device that dries the substrate with a supercritical fluid, The inspection includes diagnosing the condition of the drying device. The substrate processing system according to claim 1 .

11. A substrate processing method in a substrate processing system including a batch processing section that processes a plurality of substrates collectively and a single substrate processing section that processes substrates one by one, comprising: calculating a batch processing time including a time required for processing in the batch processing unit based on recipe information including a procedure for executing substrate processing; selecting and executing one or more inspections of the inspection items whose inspection time is equal to or less than the batch processing time based on correspondence information in which inspection items and inspection times of the inspections for the single wafer processing unit are associated with each other; A substrate processing method comprising:

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