Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method capable of efficiently drying a substrate without reducing substrate reliability.SOLUTION: In a liquid treatment step, a substrate W is rotated by a rotary holding device 10 while a processing liquid is supplied to the substrate W by a processing liquid supply unit 30. In a drying step, the substrate W is rotated by the rotary holding device 10, and a gas is supplied to the substrate W by a gas supply unit 40 at a time point when a predetermined time or longer has elapsed from a start of the drying step. Alternatively, in the drying step, the substrate W is rotated by the rotary holding device 10, and the gas is supplied to the substrate W at a flow rate smaller than a maximum flow rate of the gas at which no particles are generated from the substrate W, or at a flow rate of 10 L / min or less. Alternatively, in the drying step, the substrate W is rotated by the rotary holding device 10, and the gas is supplied to a position located outside from a rotation center of the substrate W by a predetermined distance.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for performing a predetermined process on a substrate. [Background technology]

[0002] Substrate processing apparatuses are used to perform various processes on substrates such as semiconductor substrates, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays or organic EL (Electro Luminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, or substrates for solar cells. For example, in the manufacturing process of semiconductor devices, various patterns such as wiring circuits are formed on a substrate by supplying a chemical solution onto the substrate on which a photosensitive resist has been formed.

[0003] In the substrate processing apparatus described in Patent Document 1, a rinse process is performed to stop the progress of the chemical process and remove the chemical solution remaining on the substrate after pattern formation. In the rinse process, a rinse liquid is supplied onto the substrate after the chemical process. This replaces the chemical solution on the substrate. A drying process is then performed to remove the rinse liquid remaining on the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-167582 Summary of the Invention [Problem to be solved by the invention]

[0005] During drying, nitrogen gas is sometimes supplied to the center of a rotating substrate. This causes the remaining rinse liquid to run along the surface of the substrate and be thrown off to the outside of the substrate in a short time, accelerating the drying of the substrate. However, supplying nitrogen gas to the substrate increases the friction between the substrate surface and the rinse liquid, making the substrate surface more likely to become charged. If the substrate becomes too charged, it can cause defects and reduce the reliability of the substrate.

[0006] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can efficiently dry a substrate without reducing the reliability of the substrate. [Means for solving the problem]

[0007] A substrate processing apparatus according to a first aspect of the present invention includes a spinning holder configured to hold and rotate a substrate, a processing liquid supply unit configured to supply a processing liquid to the substrate, a gas supply unit configured to supply a gas to the substrate, and a control unit that, in a liquid processing step, controls the spinning holder to rotate the substrate and controls the processing liquid supply unit to supply the processing liquid to the substrate, and, in a drying step after the liquid processing step, controls the spinning holder to rotate the substrate and controls the gas supply unit to supply a gas to the substrate at a time when a first time or more has elapsed since the start of the drying step.

[0008] A substrate processing apparatus according to a second aspect of the present invention includes a spin holder configured to hold and rotate a substrate, a processing liquid supply unit configured to supply a processing liquid to the substrate, a gas supply unit configured to supply a gas to the substrate, and a control unit that, in a liquid processing step, controls the spin holder to rotate the substrate and controls the processing liquid supply unit to supply the processing liquid to the substrate, and, in a drying step after the liquid processing step, controls the spin holder to rotate the substrate and controls the gas supply unit to supply gas to the substrate at a first flow rate that is smaller than the maximum flow rate of gas when no particles are generated from the substrate.

[0009] A substrate processing apparatus according to a third aspect of the present invention includes a spin holder configured to hold and rotate a substrate, a processing liquid supply unit configured to supply a processing liquid to the substrate, a gas supply unit configured to supply a gas to the substrate, and a control unit that, in a liquid processing step, controls the spin holder to rotate the substrate and controls the processing liquid supply unit to supply the processing liquid to the substrate, and that, in a drying step after the liquid processing step, controls the spin holder to rotate the substrate and controls the gas supply unit to supply gas to the substrate at a flow rate of 10 L / min or less.

[0010] A substrate processing apparatus according to a fourth aspect of the present invention includes a rotary holder configured to hold and rotate a substrate, a processing liquid supply unit configured to supply a processing liquid to the substrate, a gas supply unit configured to supply a gas to the substrate, and a control unit that, in a liquid processing step, controls the rotary holder to rotate the substrate and controls the processing liquid supply unit to supply the processing liquid to the substrate, and that, in a drying step after the liquid processing step, controls the rotary holder to rotate the substrate and controls the gas supply unit to supply gas to a position a predetermined distance outside the center of rotation of the substrate.

[0011] A substrate processing method according to a fifth aspect of the present invention includes, in a liquid processing step, rotating the substrate by a rotary holder and supplying a processing liquid to the substrate by a processing liquid supply unit, and, in a drying step after the liquid processing step, rotating the substrate by the rotary holder and supplying a gas to the substrate by a gas supply unit at a time when a first time or more has elapsed since the start of the drying step.

[0012] A substrate processing method according to a sixth aspect of the present invention includes, in a liquid processing step, rotating the substrate with a spin holder and supplying a processing liquid to the substrate with a processing liquid supply unit, and, in a drying step after the liquid processing step, rotating the substrate with the spin holder and supplying a gas to the substrate with a first flow rate that is smaller than a maximum flow rate of gas when no particles are generated from the substrate with a gas supply unit.

[0013] A substrate processing method according to a seventh aspect of the present invention includes, in a liquid processing step, rotating the substrate by a spin holder and supplying a processing liquid to the substrate by a processing liquid supply unit, and, in a drying step after the liquid processing step, rotating the substrate by the spin holder and supplying a gas to the substrate at a flow rate of 10 L / min or less by a gas supply unit.

[0014] A substrate processing method according to an eighth aspect of the present invention includes, in a liquid processing step, rotating the substrate by a rotary holder and supplying a processing liquid to the substrate by a processing liquid supply unit, and, in a drying step after the liquid processing step, rotating the substrate by the rotary holder and supplying a gas by a gas supply unit to a position a predetermined distance outward from a rotation center of the substrate. [Effects of the Invention]

[0015] According to the present invention, a substrate can be dried efficiently without reducing the reliability of the substrate. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a schematic cross-sectional view showing a configuration of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a block diagram showing the configuration of a control device. [Figure 3] 4 is a timing chart showing the processing steps of the substrate W by the substrate processing apparatus. FIG. [Figure 4] 3 is a flowchart showing substrate processing by the control device of FIG. 2. [Figure 5] FIG. 10 is a timing chart showing the processing steps of the substrate W by the substrate processing apparatus according to the second embodiment. [Figure 6] FIG. 10 is a block diagram showing a configuration of a control device of a substrate processing apparatus according to a first modified example. [Figure 7] FIG. 10 is a diagram showing a time chart of a substrate processing process in a first modified example. [Figure 8]10 is a flowchart showing substrate processing in a first modified example. [Figure 9] FIG. 10 is a timing chart showing a substrate processing process performed by the substrate processing apparatus according to the third embodiment. [Figure 10] FIG. 10 is a diagram showing a time chart of a substrate processing process in a second modified example. [Figure 11] 10 is a flowchart showing a substrate processing method according to a second modified example. [Figure 12] FIG. 10 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to a fourth embodiment. [Figure 13] FIG. 10 is a time chart showing a processing step of a substrate W by the substrate processing apparatus according to the fourth embodiment. [Figure 14] FIG. 11 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to a third modified example. [Figure 15] FIG. 13 is a view showing an example of a gas supply pipe included in a gas supply unit of a substrate processing apparatus according to a fifth embodiment. [Figure 16] FIG. 13 is a view showing another example of a gas supply pipe included in the gas supply unit of the substrate processing apparatus according to the fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0017] A substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described below with reference to the drawings. In the following description, the term "substrate" refers to a substrate for an FPD (Flat Panel Display) used in a liquid crystal display device or an organic EL (Electroluminescence) display device, a semiconductor substrate, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. Furthermore, the upper surface of the substrate refers to the surface of the substrate facing upward, and the lower surface of the substrate refers to the surface of the substrate facing downward. The upper surface of the substrate may be the surface on which a circuit is formed (front surface) or the surface opposite the surface on which a circuit is formed (rear surface). Furthermore, the substrate has a circular shape in a plan view excluding the notch.

[0018] 1. First embodiment (1) Configuration of the substrate processing equipment FIG. 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus according to a first embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 is a rotary substrate processing apparatus and includes a rotational holding device 10, a processing cup 20, a processing liquid supply unit 30, a gas supply unit 40, and a control device 50. The rotational holding device 10 includes a spin motor 11 and a spin chuck 12. The spin motor 11 has a rotational shaft 11a and is positioned so that the rotational shaft 11a faces upward. The spin chuck 12 is attached to the tip of the rotational shaft 11a of the spin motor 11 and rotates the substrate W about a vertical axis while holding the substrate W in a horizontal position. In this embodiment, the diameter of the substrate W is, for example, 300 mm.

[0019] The processing cup 20 is disposed to surround the periphery of the substrate W held by the spin chuck 12, and its inner walls receive the processing liquid splashed from the substrate W. An opening 21 is formed in the upper part of the processing cup 20. The upper surface of the substrate W is exposed upward through the opening 21, making it possible to perform processing on the upper surface of the substrate W from above. A waste liquid port 22 and an exhaust port 23 are formed in the lower part of the processing cup 20. The waste liquid port 22 guides the processing liquid received by the inner wall of the processing cup 20 to a waste liquid facility (not shown). The exhaust port 23 is connected to an exhaust facility in a factory where the substrate processing apparatus 100 is installed, and exhausts the atmosphere inside the processing cup 20 to the exhaust facility.

[0020] The processing liquid supply unit 30 includes a processing liquid supply source 31, a processing liquid nozzle 32, a processing liquid supply pipe 33, a processing liquid valve 34, and a nozzle transport part 35. The processing liquid supply source 31 is, for example, a bottle, and stores the processing liquid used for substrate processing. The substrate processing (liquid processing step) using the processing liquid is not particularly limited. In this embodiment, the processing liquid is, for example, a rinse liquid. The processing liquid nozzle 32 has a discharge part 32a for discharging the processing liquid, and is connected to the processing liquid supply source 31 via the processing liquid supply pipe 33. The processing liquid valve 34 includes an opening / closing valve and a flow rate adjustment valve, and is provided in the processing liquid supply pipe 33.

[0021] The nozzle transport unit 35 includes, for example, an actuator, and moves the processing liquid nozzle 32 between a processing position above the rotation center of the substrate W and a standby position outside the processing cup 20. Before the liquid processing step for the substrate W, the processing liquid nozzle 32 is moved to the processing position by the nozzle transport unit 35. In this case, the processing liquid nozzle 32 has the processing liquid discharge portion 32a facing directly downward at the processing position. In this state, by opening the processing liquid valve 34, the processing liquid stored in the processing liquid supply source 31 is guided to the processing liquid nozzle 32 through the processing liquid supply pipe 33. As a result, the processing liquid is supplied from the processing liquid nozzle 32 to the upper surface of the substrate W. The flow rate of the processing liquid supplied to the substrate W can be adjusted by the opening degree of the processing liquid valve 34.

[0022] The gas supply unit 40 includes a gas supply source 41, a gas nozzle 42, a gas supply pipe 43, a gas valve 44, and a nozzle transport part 45. The gas supply source 41 is, for example, a cylinder. The gas supply source 41 is filled with a gas used to promote drying of the substrate W. The gas may be an inert gas such as nitrogen gas, or clean air. The gas nozzle 42 has a discharge part 42a for discharging the gas, and is connected to the gas supply source 41 via the gas supply pipe 43. The gas valve 44 includes an opening / closing valve and a flow rate adjustment valve, and is provided in the gas supply pipe 43.

[0023] The nozzle transport unit 45 includes, for example, an actuator, and moves the gas nozzle 42 between a processing position above the substrate W and a standby position outside the processing cup 20. Before the drying process of the substrate W, the gas nozzle 42 is moved to the processing position by the nozzle transport unit 45. In this case, the gas nozzle 42 is positioned so that the gas outlet 42a of the gas nozzle 42 faces directly downward at the processing position. In this state, when the gas valve 44 is opened, the gas sealed in the gas supply source 41 is introduced to the gas nozzle 42 through the gas supply pipe 43. As a result, the gas is supplied from the gas nozzle 42 to the upper surface of the substrate W. The flow rate of the gas supplied to the substrate W can be adjusted by changing the opening of the gas valve 44.

[0024] The control device 50 is realized by, for example, a CPU (Central Processing Unit) and a memory. A substrate processing program for executing substrate processing is stored in the memory of the control device 50. FIG. 2 is a block diagram showing the configuration of the control device 50. As shown in FIG. 2, the control device 50 includes, as functional units, a rotation control unit 51, transfer control units 52 and 53, and opening / closing control units 54 and 55. The CPU of the control device 50 executes the substrate processing program stored in the memory to realize the functional units of the control device 50. Some or all of the functional units of the control device 50 may be realized by hardware such as electronic circuits.

[0025] The rotation control unit 51 controls the operation of the spin motor 11 to adjust the rotation speed of the substrate W held by the spin chuck 12. The transport control unit 52 controls the operation of the nozzle transport unit 35 to move the processing liquid nozzle 32 between the processing position and the standby position. The transport control unit 53 controls the operation of the nozzle transport unit 45 to move the gas nozzle 42 between the processing position and the standby position. The opening / closing control unit 54 controls the operation of the opening / closing valve in the processing liquid valve 34 to adjust the supply timing of the processing liquid. The opening / closing control unit 55 controls the operation of the opening / closing valve in the gas valve 44 to adjust the supply timing of the gas.

[0026] (2) Operation of the substrate processing device 3 is a timing chart showing the processing steps for a substrate W by the substrate processing apparatus 100. As shown in FIG. 3, the substrate processing apparatus 100 sequentially performs a liquid processing step and a drying step as the processing steps for the substrate W. Specifically, before time t1, the processing liquid nozzle 32 is moved from the standby position to the processing position by the nozzle transport unit 35, and the substrate W held by the spin chuck 12 is rotated at a constant rotational speed N1 by the spin motor 11. N1 is, for example, 200 rpm.

[0027] In this state, the processing liquid valve 34 is opened at time t1. In this case, the processing liquid is supplied from the processing liquid nozzle 32 to the center of the upper surface of the substrate W being rotated. The processing liquid supplied to the center of the upper surface of the substrate W is spread over the entire upper surface of the substrate W by centrifugal force associated with the rotation of the substrate W. In this way, the upper surface of the substrate W is liquid-processed. Thereafter, at time t2, the processing liquid valve 34 is closed, thereby stopping the supply of the processing liquid to the upper surface of the substrate W and completing the liquid processing process. Specifically, the liquid processing process is completed when a film of processing liquid having a substantially constant, predetermined thickness is formed on the upper surface of the substrate W. After the liquid processing process is completed, the processing liquid nozzle 32 is moved from the processing position to the standby position by the nozzle transport unit 35.

[0028] The drying process starts at time t2. Specifically, the gas nozzle 42 is moved from the standby position to the processing position by the nozzle transport unit 45 at a time before time t2. Also, the rotation speed of the substrate W is increased at time t2. In this case, the rotation speed of the substrate W reaches a constant value of N2, which is higher than N1, the rotation speed in the liquid processing process. N2 is preferably 300 rpm or more and 1000 rpm or less. N2 is more preferably 300 rpm or more and 500 rpm or less, and even more preferably 500 rpm. This starts drying of the substrate W.

[0029] At time t3, a predetermined time after time t2, the gas valve 44 is opened, and gas is supplied from the gas nozzle 42 to the center of the upper surface of the rotating substrate W. This further promotes drying of the substrate W. The time from time t2, when the drying process starts, to time t3, when the supply of gas to the substrate W starts, is called the delay time Δt. The delay time Δt is, for example, 35 seconds or more, and preferably 40 seconds or more.

[0030] Here, the maximum flow rate of gas at which no particles are generated from the substrate W when the gas is supplied to the substrate W is referred to as the threshold flow rate. The aperture of the gas nozzle 42 at which the flow rate of the gas supplied to the substrate W becomes the threshold flow rate is referred to as the threshold aperture. In this embodiment, the aperture of the gas valve 44 is adjusted to R0, which is the threshold aperture. As a result, the gas is supplied to the substrate W at the threshold flow rate. The threshold flow rate is, for example, 100 L / min.

[0031] Next, at time t4, the rotation speed of the substrate W is increased. In this case, the rotation speed of the substrate W reaches a constant value N3 that is greater than N2. N3 is, for example, 1500 rpm or more, and in this example, 2400 rpm. This completes drying of the substrate W. Thereafter, at time t5, the gas valve 44 is closed, thereby stopping the supply of gas to the upper surface of the substrate W and ending the drying process. After the drying process is completed, the gas nozzle 42 is moved from the processing position to the standby position by the nozzle transport unit 45. Furthermore, at time t5, the rotation speed of the substrate W is decreased, and the rotation of the substrate W stops at time t6.

[0032] (3) Substrate processing Fig. 4 is a flowchart showing substrate processing by the control device 50 of Fig. 2. The substrate processing of Fig. 4 is performed by the CPU of the control device 50 of Fig. 2 executing a substrate processing program stored in memory. The substrate processing will be described below with reference to the substrate processing apparatus 100 of Fig. 1, the control device 50 of Fig. 2, the time chart of Fig. 3, and the flowchart of Fig. 4. In the initial state, the spin motor 11 is stopped, the processing liquid nozzle 32 is in the standby position, the gas nozzle 42 is in the standby position, the processing liquid valve 34 is closed, and the gas valve 44 is closed.

[0033] First, the transport control unit 52 controls the nozzle transport unit 35 to move the processing liquid nozzle 32 to the processing position (step S1). The rotation control unit 51 controls the spin motor 11 to start rotating the substrate W (step S2). Either step S1 or step S2 may be performed first, or they may be performed simultaneously. Before time t1, the rotation speed of the substrate W reaches a constant value N1. This makes it possible to perform the liquid processing process on the substrate W.

[0034] Next, in the liquid processing step, the opening / closing control unit 54 opens the processing liquid valve 34 at time t1 (step S3). Thereafter, the opening / closing control unit 54 closes the processing liquid valve 34 at time t2 (step S4). This completes the liquid processing step for the substrate W. Furthermore, the rotation control unit 51 controls the spin motor 11 to increase the rotation speed of the substrate W (step S5). Step S5 may be performed simultaneously with step S4. Before time t3, the rotation speed of the substrate W reaches a constant value N2, which is greater than N1.

[0035] Next, the transfer control unit 52 controls the nozzle transfer unit 35 to move the processing liquid nozzle 32 to the standby position (step S6). Furthermore, the transfer control unit 53 controls the nozzle transfer unit 45 to move the gas nozzle 42 to the processing position (step S7). Step S7 may be performed simultaneously with step S6, and is performed before the rotation speed of the substrate W reaches N2. This allows the drying process of the substrate W to be performed.

[0036] Thereafter, in the drying step, the opening / closing control unit 55 determines whether the delay time Δt has elapsed since time t2 (step S8). If the delay time Δt has not elapsed, the opening / closing control unit 55 waits until the delay time Δt has elapsed. If the delay time Δt has elapsed (i.e., the current time has reached time t3), the opening / closing control unit 55 opens the gas valve 44 (step S9). Next, the rotation control unit 51 controls the spin motor 11 at time t4 to increase the rotation speed of the substrate W (step S10). Before time t5, the rotation speed of the substrate W reaches a constant value N3 that is greater than N2.

[0037] Subsequently, the opening / closing control unit 55 closes the gas valve 44 at time t5 (step S11). This completes the drying process for the substrate W. Furthermore, the rotation control unit 51 controls the spin motor 11 to reduce the rotation speed of the substrate W (step S12). Step S12 may be performed simultaneously with step S11. At time t6, the rotation of the substrate W stops. Thereafter, the transport control unit 53 controls the nozzle transport unit 45 to move the gas nozzle 42 to the standby position (step S13). This completes the substrate processing. Step S13 may be performed at any time after time t5.

[0038] (4) Effects In the substrate processing apparatus 100 according to this embodiment, the substrate W is rotated by the spin holding device 10 without gas being supplied during the period from the start time t2 of the drying step until the delay time Δt has elapsed. This allows for a certain degree of promotion of drying of the substrate W, with almost no charging due to friction between the substrate W and the processing liquid. After this period, gas is supplied to the rotating substrate W, further promoting drying of the substrate W. Since the amount of processing liquid remaining on the substrate W has decreased by the time the delay time Δt has elapsed from the start time t2 of the drying step, supplying gas to the substrate W will hardly result in charging due to friction between the substrate W and the processing liquid. This allows for efficient drying of the substrate W without reducing the reliability of the substrate W.

[0039] The delay time Δt is 40 seconds or more, so that the processing liquid remaining on the substrate W can be sufficiently reduced before the gas is supplied to the substrate W.

[0040] The rotation control unit 51 controls the spin holding device 10 so that the rotation speed of the substrate W in the drying step is higher than the rotation speed of the substrate W in the liquid processing step. In this case, the substrate W can be dried more efficiently.

[0041] Furthermore, in the drying process, the rotation control unit 51 controls the spin holding device 10 to rotate the substrate W at a rotation speed of N2 for a predetermined time, and then rotate the substrate W at a rotation speed of N3, which is higher than N2. In this case, drying of the substrate W is further accelerated. Here, if N2 is 300 rpm or more and 1000 rpm or less, charging due to friction between the substrate W and the processing liquid can be more reliably suppressed. Furthermore, at time t4 after the substrate W has rotated at the rotation speed of N2 for a predetermined time, the processing liquid remaining on the substrate W has decreased, so even if the substrate W is rotated at the rotation speed of N3, charging due to friction between the substrate W and the processing liquid hardly occurs. This allows the substrate W to be dried more efficiently without reducing the reliability of the substrate W.

[0042] 2. Second embodiment (1) Configuration and Operation of the Substrate Processing Apparatus The following describes the differences between the substrate processing apparatus 100 according to the second embodiment and the substrate processing apparatus 100 according to the first embodiment. In this embodiment, the aperture of the gas valve 44 is controlled to R1, which is smaller than the threshold aperture R0. When the aperture of the gas valve 44 is R1, the flow rate of the gas discharged from the gas nozzle 42 is, for example, less than 70 L / min. When the aperture of the gas valve 44 is R1, the flow rate of the gas discharged from the gas nozzle 42 is preferably 30 L / min or more and 60 L / min or less, and more preferably 50 L / min or less.

[0043] The threshold opening R0 of the gas valve 44 is determined by a preliminary evaluation. The preliminary evaluation is based on the size and number of particles adhering to the substrate W. Specifically, the threshold opening R0 is determined so that the number of particles of a predetermined size or larger is reduced to a predetermined number or less. Therefore, when the opening of the gas valve 44 is R1, the flow rate of the gas discharged from the gas nozzle 42 is smaller than the threshold flow rate (i.e., the maximum flow rate of gas when no particles are generated from the substrate W).

[0044] 5 is a timing chart showing the processing steps of a substrate W by the substrate processing apparatus 100 according to the second embodiment. As shown in FIG. 5, the operations of the spin motor 11 and the processing liquid valve 34 according to this embodiment are the same as those of the spin motor 11 and the processing liquid valve 34 according to the first embodiment. However, the gas valve 44 is opened at time t2, not at time t3, which is the delay time Δt after time t2 when the drying step starts. That is, in this embodiment, the delay time Δt is not provided. Also, as described above, the opening of the gas valve 44 is adjusted to R1, not R0.

[0045] The flowchart for substrate processing in this embodiment is similar to the flowchart for substrate processing in the first embodiment shown in Fig. 4, except that step S8 is not executed. According to this control, gas is supplied from gas nozzle 42 to the center of the upper surface of the rotating substrate W at a flow rate smaller than the threshold flow rate during the period from time t2 when the drying step starts to time t5 when the drying step ends.

[0046] (2) Effects In the substrate processing apparatus 100 according to this embodiment, gas is supplied to the substrate W at a flow rate that is smaller than the maximum flow rate of gas when no particles are generated from the substrate W. In this case, the flow rate of the gas supplied to the substrate W is sufficiently small, so that almost no charging due to friction between the substrate W and the processing liquid occurs, and drying of the substrate W is promoted. This allows the substrate W to be dried efficiently without reducing the reliability of the substrate W. In addition, in this example, the gas flow rate is less than 70 L / min. In this case, the amount of particles generated from the substrate W can be reliably reduced.

[0047] (3) First Modification 6 is a block diagram showing the configuration of a control device 50 of a substrate processing apparatus 100 according to a first modified example. As shown in Fig. 6, the control device 50 further includes a flow rate adjustment unit 56 as a functional unit. The flow rate adjustment unit 56 adjusts the flow rate of the gas supplied to the substrate W by controlling the aperture of the flow rate adjustment valve in the gas valve 44.

[0048] 7 is a timing chart of the processing step of the substrate W in the first modified example. As shown in FIG. 7, in the first modified example, the gas valve 44 is controlled so that the aperture is R1 during a period before time t2a, and is controlled so that the aperture is R2, which is larger than R1, during a period after time t2a. Time t2a is after time t2 and before time t4.

[0049] The opening of the gas valve 44 may be controlled to be R1 at least during the period from time t2 to time t2a, and to be R2 at least during the period from time t2a to time t5. This allows the gas flow rate after time t2a to be greater than the gas flow rate before time t2a. R2 may also be equal to R0.

[0050] Fig. 8 is a flowchart showing substrate processing in the first modified example. As shown in Fig. 8, the flowchart for substrate processing in this embodiment is similar to the flowchart for substrate processing in the first embodiment shown in Fig. 4, except that step S8 is not executed and steps S9a and S14 are added. Also, in the initial state, the opening degree of gas valve 44 is adjusted to R1.

[0051] Step S9a is executed between step S9 and step S10. In step S9a, the flow rate adjuster 56 increases the aperture of the gas valve 44 so that the aperture of the gas valve 44 changes from R1 to R2. Step S14 is executed, for example, after step S13. In step S14, the flow rate adjuster 56 decreases the aperture of the gas valve 44 so that the aperture of the gas valve 44 changes from R2 to R1. Step S14 may be executed at any time after step S11.

[0052] This control further promotes drying of the substrate W. Furthermore, at time t2a when gas has been supplied to the substrate W at a relatively small flow rate for a predetermined time, the amount of processing liquid remaining on the substrate W has decreased, so even if the flow rate of gas supplied to the substrate W is increased, almost no charging due to friction between the substrate W and the processing liquid occurs. This allows the substrate W to be dried more efficiently without reducing the reliability of the substrate W.

[0053] 3. Third Embodiment (1) Configuration and Operation of the Substrate Processing Apparatus The following describes the differences between the substrate processing apparatus 100 according to the third embodiment and the substrate processing apparatus 100 according to the first embodiment. In this embodiment, the aperture of the gas valve 44 is controlled to be R3, which is determined by a preliminary experiment. Here, the larger the aperture of the gas valve 44, the greater the flow rate of gas supplied to the substrate W, and therefore the greater the amount of charge caused by friction between the substrate W and the processing liquid. Therefore, in the preliminary experiment, the amount of charge generated on the substrate W is measured while gradually decreasing the aperture of the gas valve 44. The aperture of the gas valve 44 when the amount of charge reaches a predetermined, extremely small value is determined to be R3. In this example, the gas flow rate when the aperture of the gas valve 44 is R3 is 10 L / min or less.

[0054] 9 is a timing chart showing the processing steps of a substrate W by the substrate processing apparatus 100 according to the third embodiment. As shown in FIG. 9, the operations of the spin motor 11 and the processing liquid valve 34 in this embodiment are the same as those of the spin motor 11 and the processing liquid valve 34 in the first embodiment. However, the gas valve 44 is opened at time t2, not at time t3, which is the delay time Δt after time t2 when the drying step starts. That is, in this embodiment, the delay time Δt is not provided. Also, as described above, the opening of the gas valve 44 is adjusted to R3, not R0.

[0055] The flowchart for substrate processing in this embodiment is similar to the flowchart for substrate processing in the first embodiment shown in Fig. 4, except that step S8 is not executed. According to this control, gas is supplied from the gas nozzle 42 to the center of the upper surface of the rotating substrate W at a flow rate of 10 L / min or less during the period from the start time t2 of the drying process to the end time t5 of the drying process.

[0056] (2) Effects In the substrate processing apparatus 100 according to this embodiment, gas is supplied to the substrate W at a flow rate of 10 L / min or less. In this case, almost no charging due to friction between the substrate W and the processing liquid occurs, and drying of the substrate W is promoted. This allows the substrate W to be dried efficiently without deteriorating its reliability.

[0057] (3) Second Modification The control device 50 in the second modified example has a configuration similar to that of the control device 50 in the first modified example of the first embodiment shown in Fig. 6. Fig. 10 is a diagram showing a time chart of the processing step of the substrate W in the second modified example. As shown in Fig. 10, in the second modified example, the gas valve 44 is controlled so that the aperture of the gas valve 44 is R3 during the period before time t2b, and is controlled so that the aperture of the gas valve 44 is R4, which is larger than R3, during the period after time t2b. Time t2b is a time point after time t2 and before time t4.

[0058] The aperture of the gas valve 44 may be controlled to be R3 at least during the period from time t2 to time t2b, and to be R4 at least during the period from time t2b to time t5. This allows the gas flow rate after time t2b to be greater than the gas flow rate before time t2a, i.e., 10 L / min. Although R4 may be equal to R0, it is preferable that the flow rate of the gas discharged from the gas nozzle 42 when the aperture of the gas valve 44 is R4 be less than 70 L / min. In this case, the amount of particles generated from the substrate W can be reliably reduced.

[0059] Fig. 11 is a flowchart showing substrate processing in the second modified example. As shown in Fig. 11, the flowchart for substrate processing in this embodiment is similar to the flowchart for substrate processing in the first embodiment shown in Fig. 4, except that step S8 is not executed and steps S9b and S15 are added. Also, in the initial state, the opening degree of gas valve 44 is adjusted to R3.

[0060] Step S9b is executed between step S9 and step S10. In step S9b, the flow rate adjuster 56 increases the aperture of the gas valve 44 so that the aperture of the gas valve 44 changes from R3 to R4. Step S15 is executed, for example, after step S13. In step S15, the flow rate adjuster 56 decreases the aperture of the gas valve 44 so that the aperture of the gas valve 44 changes from R4 to R3. Step S15 may be executed at any time after step S11.

[0061] This control further promotes drying of the substrate W. Furthermore, at time t2b when gas has been supplied to the substrate W at a flow rate of 10 L / min or less for a predetermined time, the amount of processing liquid remaining on the substrate W has decreased, so even if the flow rate of gas supplied to the substrate W is greater than 10 L / min, almost no charging due to friction between the substrate W and the processing liquid occurs. This allows the substrate W to be dried more efficiently without reducing the reliability of the substrate W.

[0062] 4. Fourth Embodiment (1) Configuration and Operation of Substrate Processing Apparatus The following describes the differences between the substrate processing apparatus 100 according to the fourth embodiment and the substrate processing apparatus 100 according to the first embodiment. Fig. 12 is a schematic cross-sectional view showing the configuration of the substrate processing apparatus 100 according to the fourth embodiment. As shown in Fig. 12, in this embodiment, during the liquid processing step, the gas nozzle 42 is arranged at a processing position above the center of rotation of the substrate W held by the rotation holding device 10, with the gas nozzle 42 tilted with respect to a vertical axis perpendicular to the substrate W plate so that the gas discharge portion 42a faces diagonally downward.

[0063] The inclination angle of the gas nozzle 42 with respect to the vertical axis is, for example, about several degrees. The inclination angle of the gas nozzle 42 is preferably 3 degrees or more, and more preferably 4 degrees or more. The inclination angle of the gas nozzle 42 may be 6 degrees or less. With this configuration, the gas discharged from the discharge portion 42a of the gas nozzle 42 is supplied to a position that is a predetermined distance Δx outward from the center of the upper surface of the substrate W and sufficiently inward from the bevel portion of the substrate W. The distance Δx is preferably 10 mm or more and 130 mm or less. The distance Δx is preferably 50 mm or more and 70 mm or less, and more preferably 60 mm.

[0064] 13 is a timing chart showing the processing steps of a substrate W by the substrate processing apparatus 100 according to the fourth embodiment. As shown in FIG. 13, the operations of the spin motor 11 and the processing liquid valve 34 according to this embodiment are the same as those of the spin motor 11 and the processing liquid valve 34 according to the first embodiment. On the other hand, the gas valve 44 is opened at time t2, not at time t3, which is the delay time Δt after time t2 when the drying step starts. That is, in this embodiment, the delay time Δt is not provided. The opening of the gas valve 44 may be R0, as in the first embodiment.

[0065] The flowchart for substrate processing in this embodiment is similar to the flowchart for substrate processing in the first embodiment shown in FIG. 4, except that the gas valve 44 moved to the processing position in step S7 is tilted and step S8 is not performed.

[0066] (2) Effects In the substrate processing apparatus 100 according to this embodiment, gas is supplied to a position that is a predetermined distance Δx outward from the center of rotation of the substrate W. In this way, the gas is supplied to a position that avoids the center of rotation of the substrate W where the processing liquid is likely to remain, and therefore, the drying of the substrate W is promoted with almost no charging due to friction between the substrate W and the processing liquid. This allows the substrate W to be dried efficiently without reducing the reliability of the substrate W.

[0067] The gas supply unit 40 also includes a gas nozzle 42 having a discharge port 42a that discharges gas. During the drying process, the gas nozzle 42 is positioned above the center of rotation of the substrate W with the discharge port 42a tilted so that it faces diagonally downward. In this case, gas can be easily supplied to a position that is a distance Δx outward from the center of rotation of the substrate W. In this example, the distance Δx is 10 mm or more and 130 mm or less. This makes it possible to easily prevent insufficient drying of the center of rotation of the substrate W while suppressing charging caused by friction between the substrate W and the processing liquid. In particular, by setting the inclination angle of the gas nozzle 42 to 4 degrees or more, charging caused by friction between the substrate W and the processing liquid can be more reliably suppressed.

[0068] (3) Third Modification In this embodiment, the processing position is above the center of rotation of the substrate W, and the gas nozzle 42 is disposed at the processing position in an inclined state during the drying step, but the embodiment is not limited to this. The processing position does not have to be above the center of rotation of the substrate W, as long as gas can be supplied to a position that is a distance Δx outward from the center of rotation of the substrate W and sufficiently inward from the bevel portion of the substrate W. Furthermore, the gas nozzle 42 does not have to be disposed at the processing position in an inclined state during the drying step.

[0069] 14 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus 100 according to a third modified example. As shown in FIG. 14, in this example, the processing position is above a position that is a distance Δx outward from the center of rotation of the substrate W. Furthermore, during the drying process, the gas nozzle 42 is disposed at the processing position with the gas outlet 42a facing directly downward. Even with this configuration, gas can be easily supplied to a position that is a distance Δx outward from the center of rotation of the substrate W.

[0070] 5. Fifth Embodiment (1) Gas supply pipe configuration 1, 12, or 14. In the substrate processing by the substrate processing apparatus 100 according to the present embodiment, any of the processing conditions for the substrate W disclosed in the first to fifth embodiments (including the first to third modified embodiments) may be used. Alternatively, in the substrate processing by the substrate processing apparatus 100 according to the present embodiment, processing conditions for the substrate W different from the processing conditions for the substrate W disclosed in the first to fifth embodiments may be used.

[0071] Fig. 15 is a diagram showing an example of a gas supply pipe 43 included in the gas supply unit 40 of the substrate processing apparatus 100 according to the fifth embodiment. As shown in Fig. 15, the gas supply pipe 43 includes a flow path portion 43a and one or more conductive portions 43b. To facilitate understanding of the structure of the gas supply pipe 43, the conductive portions 43b are indicated by a predetermined hatching pattern in Fig. 15.

[0072] The flow path portion 43a is, for example, a cylindrical pipe and is made of an insulating material. The insulating material may be, for example, a fluororesin. In this example, the flow path portion 43a is made of a resin containing PFA (perfluoroalkoxyalkane). The flow path portion 43a may have another cylindrical shape that forms an internal space, such as an elliptical cylindrical shape. Gas supplied from the gas supply source 41 to the gas nozzle 42 flows inside the flow path portion 43a.

[0073] The conductive portion 43b has a strip shape extending in the direction in which the flow path portion 43a extends (hereinafter referred to as the flow path direction), and is made of a conductive material. The conductive material may be, for example, conductive PFA or carbon. The conductive portion 43b is attached to the outer circumferential surface of the flow path portion 43a along the flow path direction. In this example, four conductive portions 43b are attached to the outer circumferential surface of the flow path portion 43a at 90-degree intervals.

[0074] The conductive portions 43b are provided so as to be groundable. In this example, one end of a conductive band (not shown) is hung over the gas supply pipe 43 so as to be in electrical contact with the plurality of conductive portions 43b. The other end of the conductive band is electrically connected to a grounding facility in a factory where the substrate processing apparatus 100 is installed. In this way, the plurality of conductive portions 43b are grounded through the conductive band. The conductive portions 43b may also be grounded by other methods.

[0075] Note that a groove for fitting the conductive portion 43b may be formed on the outer peripheral surface of the flow path portion 43a. In this case, the conductive portion 43b is fitted into the groove on the outer peripheral surface of the flow path portion 43a, thereby attaching the conductive portion 43b to the outer peripheral surface of the flow path portion 43a. In this configuration, the outer peripheral surface of the gas supply pipe 43 can be made flush with the portion where the conductive portion 43b is attached and the portion where the conductive portion 43b is not attached.

[0076] 16 is a diagram showing another example of the gas supply pipe 43 included in the gas supply unit 40 of the substrate processing apparatus 100 according to the fifth embodiment. As shown in Fig. 16, the gas supply pipe 43 further includes one or more conductive portions 43c and one or more conductive portions 43d in addition to the flow path portion 43a and one or more conductive portions 43b. To facilitate understanding of the structure of the gas supply pipe 43, in Fig. 16, the conductive portion 43b is indicated by a first hatching pattern, the conductive portion 43c is indicated by a second hatching pattern, and the conductive portion 43d is indicated by a third hatching pattern.

[0077] The conductive portion 43c has a strip shape extending in the flow path direction and is made of a conductive material. The conductive portion 43c may be made of the same material as the conductive portion 43b. The conductive portion 43c is attached to the inner circumferential surface of the flow path portion 43a along the flow path direction. In this example, four conductive portions 43c are provided corresponding to the four conductive portions 43b, respectively, and four conductive portions 43d are provided corresponding to the four conductive portions 43b, respectively. The four conductive portions 43c are attached to the inner circumferential surface of the flow path portion 43a at 90-degree intervals. Each conductive portion 43c faces the corresponding conductive portion 43b across the circumferential wall of the flow path portion 43a.

[0078] Each conductive portion 43d electrically connects the corresponding conductive portion 43b and conductive portion 43c. In this example, each conductive portion 43d has a strip shape extending along the flow path direction and is formed of a conductive member. Each conductive portion 43d may be formed of the same material as the conductive portions 43b and 43c. One or more (four in this example) slits extending in the flow path direction and penetrating the peripheral wall in the thickness direction are formed in the portion of the peripheral wall of the flow path portion 43a between the conductive portion 43b and the corresponding conductive portion 43c. Each conductive portion 43d fills the slit in the peripheral wall of the flow path portion 43a so as to contact the conductive portions 43b and 43c. As a result, the conductive portion 43b and the corresponding conductive portion 43c are electrically connected via the conductive portion 43d.

[0079] The conductive portions 43b to 43d are provided so as to be groundable. In this example, the conductive portion 43b is grounded in the same manner as the gas supply pipe 43 in FIG. 15, thereby grounding the conductive portions 43b to 43d. A groove for fitting the conductive portion 43c may be formed on the inner circumferential surface of the flow path portion 43a. In this case, the conductive portion 43c is fitted into the groove on the inner circumferential surface of the flow path portion 43a, thereby attaching the conductive portion 43c to the inner circumferential surface of the flow path portion 43a. In this configuration, the inner circumferential surface of the gas supply pipe 43 can be made flush with the portion where the conductive portion 43c is attached and the portion where the conductive portion 43c is not attached.

[0080] (2) Effects In the substrate processing apparatus 100 according to this embodiment, even if an electric charge is generated due to friction between the gas flowing through the flow path portion 43a of the gas supply pipe 43 shown in FIG. 15 and the peripheral wall of the flow path portion 43a, the electric charge is discharged to the ground through the conductive portion 43b. Alternatively, even if an electric charge is generated due to friction between the gas flowing through the flow path portion 43a of the gas supply pipe 43 shown in FIG. 16 and the peripheral wall of the flow path portion 43a, the electric charge is discharged to the ground through the conductive portions 43b to 43d. This more reliably prevents the substrate from being charged. The inventors have confirmed that the gas supply pipe 43 shown in FIG. 15 and the gas supply pipe 43 shown in FIG. 16 provide substantially the same effect of preventing the substrate from being charged.

[0081] 6. Other Embodiments In the above embodiment, the rotation control unit 51 controls the rotation holding device 10 so that the rotation speed of the substrate W in the drying step is higher than the rotation speed of the substrate W in the liquid treatment step, but the embodiment is not limited to this. The rotation control unit 51 may also control the rotation holding device 10 so that the rotation speed of the substrate W in the liquid treatment step is equal to the rotation speed of the substrate W in the drying step. Alternatively, the rotation control unit 51 may control the rotation holding device 10 so that the rotation speed of the substrate W in the drying step is lower than the rotation speed of the substrate W in the liquid treatment step.

[0082] Furthermore, in the above embodiment, the rotation control unit 51 controls the rotation holding device 10 so that the rotation speed of the substrate W increases from N2 to N3 during the drying process, but the embodiment is not limited to this. The rotation control unit 51 may also control the rotation holding device 10 so that the rotation speed of the substrate W remains constant during the drying process rather than increasing. Alternatively, the rotation control unit 51 may control the rotation holding device 10 so that the rotation speed of the substrate W decreases during the drying process.

[0083] Furthermore, in the above-described embodiment, the liquid processing step is performed by supplying one type of processing liquid to the upper surface of the substrate W, but the embodiment is not limited to this. A configuration may be adopted in which a plurality of processing liquid supply sources and a plurality of processing liquid valves are connected to the processing liquid supply pipe 33 so that a plurality of processing liquids can be supplied to the processing liquid nozzle 32. In this case, for example, in the first liquid processing step, a chemical liquid such as SC1 or SC2 may be supplied to the upper surface of the substrate W as the first processing liquid, and then in the second liquid processing step, a rinse liquid such as DIW may be supplied to the upper surface of the substrate W as the second processing liquid. Alternatively, in the first liquid processing step, a rinse liquid such as DIW may be supplied to the upper surface of the substrate W as the first processing liquid, and then in the second liquid processing step, a chemical liquid such as IPA may be supplied to the upper surface of the substrate W as the second processing liquid.

[0084] In the above embodiment, the processing liquid nozzle 32 is configured so that the discharge portion 32a of the processing liquid faces directly downward when in the processing position, but the embodiment is not limited to this. If the processing liquid nozzle 32 and the gas nozzle 42 come into contact with each other as the processing liquid nozzle 32 or the gas nozzle 42 moves, the processing liquid nozzle 32 may be disposed at an angle to avoid the gas nozzle 42. In this case, the discharge portion 32a of the processing liquid nozzle 32 is configured so that the discharged processing liquid is supplied to the upper surface of the substrate W.

[0085] 7. Correspondence between each element of the claims and each part of the embodiment Below, examples of correspondence between each element of the claims and each element of the embodiments will be described, but the present invention is not limited to the following examples. Various other elements having the configuration or function described in the claims can also be used as each element of the claims.

[0086] In the above-described embodiment, the substrate W is an example of a substrate, the spinning and holding device 10 is an example of a spinning and holding section, the processing liquid supply unit 30 is an example of a processing liquid supply section, and the gas supply unit 40 is an example of a gas supply section. The control device 50 is an example of a control section, the substrate processing apparatus 100 is an example of a substrate processing apparatus, the discharge section 42a is an example of a discharge section, and the gas nozzle 42 is an example of a gas nozzle.

[0087] 8. Working Example In the following Examples 1 to 6, the results of substrate processing were evaluated while varying various substrate processing conditions. Specifically, during substrate processing, the center portion of the substrate becomes negatively charged. Furthermore, depending on the substrate processing conditions, particles are generated from the substrate. Therefore, examples in which the amount of negative charge (hereinafter simply referred to as charge amount) at the center portion of the substrate was relatively large or a large amount of particles was generated from the substrate as a result of substrate processing were evaluated as "X". Examples in which the amount of charge was relatively small and the amount of particle generation was relatively small were evaluated as "△". Examples in which the amount of charge or the amount of particle generation was better than "△" were evaluated as "◯". Examples in which the amount of charge or the amount of particle generation was better than "◯" were evaluated as "◎".

[0088] In Example 1, the gas supply delay time Δt in the drying step, which is one of the processing conditions, was varied to various values, and substrate processing similar to that of the first embodiment shown in the time chart of Figure 3 was performed. Other processing conditions included a gas flow rate of 30 L / min, a substrate rotation speed N2 of 500 rpm, and a substrate rotation speed N3 of 2400 rpm. The results of the substrate processing in Example 1 are shown in Table 1.

[0089] [Table 1]

[0090] As shown in Table 1, when the delay time Δt was 0 seconds, i.e., when gas was supplied to the substrate simultaneously with the start of the drying process, the amount of charge was relatively large, and the evaluation was "×". When the delay time Δt was 35 seconds, the amount of charge was sufficiently small, and the evaluation was "◯". When the delay time Δt was 40 seconds, 50 seconds, and 60 seconds, the amount of charge was extremely small, and the evaluation was "◎". From these evaluations, it was confirmed that the delay time Δt of gas supply to reduce the amount of charge is preferably 35 seconds or more, and more preferably 40 seconds or more.

[0091] In Example 2, substrate processing similar to that of the second embodiment shown in the time chart of Figure 5 was performed while varying the opening of gas valve 44 (i.e., gas flow rate), which is one of the processing conditions. Other processing conditions included a substrate rotation speed N2 of 500 rpm and a substrate rotation speed N3 of 2400 rpm. The results of substrate processing in Example 2 are shown in Table 2.

[0092] [Table 2]

[0093] As shown in Table 2, when the gas flow rate was 100 L / min, a large amount of particles with a size of 19 nm or more were generated from the substrate, resulting in an evaluation of "×." When the gas flow rate was 70 L / min, the amount of particles generated was relatively small, resulting in an evaluation of "△." When the gas flow rates were 60 L / min, 50 L / min, and 30 L / min, the amount of particles generated was extremely small, resulting in an evaluation of "◎." In particular, the amount of particles generated was the smallest when the gas flow rate was 50 L / min. From these evaluations, it was confirmed that the gas flow rate for reducing the amount of particles generated is preferably less than 70 L / min, more preferably 30 L / min to 60 L / min, and even more preferably 50 L / min.

[0094] In Example 3, substrate processing similar to that of the third embodiment shown in the time chart of Figure 9 was performed while varying the opening of gas valve 44 (i.e., gas flow rate), which is one of the processing conditions. Other processing conditions included a substrate rotation speed N2 of 500 rpm and a substrate rotation speed N3 of 2400 rpm. The results of substrate processing in Example 3 are shown in Table 3.

[0095] [Table 3]

[0096] As shown in Table 3, when the gas flow rate was 30 L / min and 20 L / min, the amount of charge was relatively small, and therefore the evaluation was "△". When the gas flow rate was 10 L / min and 0 L / min, the amount of charge was extremely small, and therefore the evaluation was "◎". From these evaluations, it was confirmed that the gas flow rate for reducing the amount of charge is preferably 30 L / min or less, and more preferably 10 L / min or less.

[0097] In Example 4, the tilt angle of gas nozzle 42, one of the processing conditions, was varied to various values, and substrate processing similar to that of the fourth embodiment shown in the time chart of Figure 13 was performed. Other processing conditions included a gas flow rate of 30 L / min, a substrate rotation speed N2 of 500 rpm, and a substrate rotation speed N3 of 2400 rpm. The results of substrate processing in Example 4 are shown in Table 4.

[0098] [Table 4]

[0099] As shown in Table 4, when the tilt angle was 0 degrees, i.e., when the gas nozzle 42 was not tilted, the amount of charge was relatively large, and was evaluated as "×". When the tilt angle was 3 degrees, the amount of charge was relatively small, and was evaluated as "△". When the tilt angle was 4 degrees and 5 degrees, the amount of charge was extremely small, and was evaluated as "◎". From these evaluations, it was confirmed that the tilt angle of the gas nozzle 42 for reducing the amount of charge is preferably 3 degrees or more, and more preferably 4 degrees or more.

[0100] In Example 5, substrate processing similar to that of the fourth embodiment (third modified example) shown in the time chart of Figure 13 was performed while varying one of the processing conditions, the distance Δx of the gas nozzle 42 from the center of the substrate. Other processing conditions included a gas flow rate of 50 L / min, a substrate rotation speed N2 of 500 rpm, and a substrate rotation speed N3 of 2400 rpm. The results of substrate processing in Example 5 are shown in Table 5.

[0101] [Table 5]

[0102] As shown in Table 5, when the distance Δx was 0 mm, i.e., when the gas nozzle 42 was positioned above the center of rotation of the substrate W without tilting, the amount of charge was relatively large and was evaluated as "×." When the distance Δx was 10 mm, 20 mm, and 130 mm, the amount of charge was sufficiently small and was evaluated as "◯." When the distance Δx was 60 mm and 100 mm, the amount of charge was extremely small and was evaluated as "◎." From these evaluations, it was confirmed that the distance Δx of the gas nozzle 42 from the center of the substrate to reduce the amount of charge is preferably 10 mm or more and 130 mm or less.

[0103] Furthermore, when the distance Δx was 60 mm, the amount of particles generated was extremely small. Therefore, in consideration of the amount of particles generated, it was confirmed that the distance Δx of gas nozzle 42 from the center of the substrate is more preferably 50 mm or more and 70 mm or less, and even more preferably 60 mm.

[0104] In Example 6, substrate processing similar to that of the fourth embodiment (third modified example) shown in the time chart of Figure 13 was performed while varying the substrate rotation speed N2, one of the processing conditions, to various values. Other processing conditions included a gas flow rate of 50 L / min, a substrate rotation speed N3 of 2400 rpm, and a distance Δx of the gas nozzle 42 from the center of the substrate of 60 mm. The results of substrate processing in Example 6 are shown in Table 6.

[0105] [Table 6]

[0106] As shown in Table 6, when the rotation speed N2 was 200 rpm, the amount of charge was relatively small, and therefore the evaluation was "△". When the rotation speed N2 was 300 rpm and 500 rpm, the amount of charge was extremely small, and therefore the evaluation was "◎". When the rotation speed N2 was 1000 rpm, the amount of charge was sufficiently small, and therefore the evaluation was "◯". From these evaluations, it was confirmed that the rotation speed N2 of the substrate for reducing the amount of charge is preferably 300 rpm or more and 1000 rpm or less. In particular, it was confirmed that the rotation speed N2 is more preferably 300 rpm or more and 500 rpm or less, and 500 rpm is even more preferable.

[0107] 9. Summary of the embodiment (Item 1) The substrate processing apparatus according to item 1 comprises: a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; The control unit controls the rotation holding unit to rotate the substrate and the processing liquid supply unit to supply processing liquid to the substrate in the liquid processing step, and controls the rotation holding unit to rotate the substrate and the gas supply unit to supply gas to the substrate when a first time or more has elapsed since the start of the drying step in the drying step.

[0108] In this substrate processing apparatus, the substrate is rotated by the rotation holder without supplying gas during the period from the start of the drying process until the first time, and thus drying of the substrate is promoted to a certain extent without generating almost any charging due to friction between the substrate and the processing liquid. After that period, gas is supplied to the rotating substrate, which further promotes drying of the substrate. Since the amount of processing liquid remaining on the substrate has decreased by the time the first time has elapsed since the start of the drying process, supplying gas to the substrate hardly generates any charging due to friction between the substrate and the processing liquid. This allows the substrate to be dried efficiently without reducing its reliability.

[0109] (Item 2) In the substrate processing apparatus according to item 1, The first period of time may be 40 seconds or more.

[0110] In this case, the processing liquid remaining on the substrate can be sufficiently reduced before the gas is supplied to the substrate.

[0111] (Item 3) The substrate processing apparatus according to item 3 is a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; The apparatus includes a control unit that, in a liquid processing step, rotates the substrate by controlling the spinning holder and supplies processing liquid to the substrate by controlling the processing liquid supply unit, and, in a drying step after the liquid processing step, rotates the substrate by controlling the spinning holder and supplies gas to the substrate at a first flow rate that is smaller than the maximum flow rate of gas when no particles are generated from the substrate by controlling the gas supply unit.

[0112] In this substrate processing apparatus, gas is supplied to the substrate at a sufficiently small flow rate, which substantially eliminates the generation of static electricity due to friction between the substrate and the processing liquid, thereby facilitating drying of the substrate, thereby enabling efficient drying of the substrate without reducing the reliability of the substrate.

[0113] (Item 4) In the substrate processing apparatus according to item 3, In the drying process, after gas is supplied to the substrate at the first flow rate for a second period of time, the control unit may control the gas supply unit to supply gas to the substrate at a second flow rate greater than the first flow rate.

[0114] In this case, drying of the substrate is further accelerated. Also, since the amount of processing liquid remaining on the substrate has decreased by the time the gas is supplied to the substrate at the first flow rate for the second time, charging due to friction between the substrate and the processing liquid hardly occurs even when the gas is supplied to the substrate at the second flow rate. This allows the substrate to be dried more efficiently without reducing the reliability of the substrate.

[0115] (Item 5) In the substrate processing apparatus according to item 3 or 4, The first flow rate may be less than 70 L / min.

[0116] In this case, the amount of particles generated from the substrate can be reliably reduced.

[0117] (Item 6) The substrate processing apparatus according to item 6 is a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; and a control unit that, in the liquid processing step, controls the spinning holder to rotate the substrate and controls the processing liquid supply unit to supply the processing liquid to the substrate, and, in the drying step after the liquid processing step, controls the spinning holder to rotate the substrate and controls the gas supply unit to supply gas to the substrate at a flow rate of 10 L / min or less.

[0118] In this substrate processing apparatus, gas is supplied to the substrate at a flow rate of 10 L / min or less. In this case, the substrate is dried efficiently without generating any static electricity due to friction between the substrate and the processing liquid. This allows the substrate to be dried efficiently without reducing its reliability.

[0119] (Item 7) In the substrate processing apparatus according to item 6, In the drying step, after gas has been supplied to the substrate at a flow rate of 10 L / min or less for a third time, the control unit may control the gas supply unit to supply gas to the substrate at a third flow rate greater than 10 L / min.

[0120] In this case, drying of the substrate is further accelerated. Furthermore, since the amount of processing liquid remaining on the substrate has decreased by the time the gas is supplied to the substrate at a flow rate of 10 L / min or less for the third time, almost no charging due to friction between the substrate and the processing liquid occurs, even when gas is supplied to the substrate at the third flow rate. This allows the substrate to be dried more efficiently without reducing its reliability.

[0121] (Item 8) In the substrate processing apparatus according to item 7, The third flow rate may be less than 70 L / min.

[0122] In this case, the amount of particles generated from the substrate can be reliably reduced.

[0123] (Item 9) The substrate processing apparatus according to item 9 is a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; The apparatus is provided with a control unit that, in a liquid processing step, rotates the substrate by controlling the rotation holding unit and supplies processing liquid to the substrate by controlling the processing liquid supply unit, and, in a drying step after the liquid processing step, rotates the substrate by controlling the rotation holding unit and supplies gas to a position a predetermined distance outward from the center of rotation of the substrate by controlling the gas supply unit.

[0124] In this substrate processing apparatus, gas is supplied to a position that avoids the center of rotation of the substrate, where processing liquid is likely to remain, thereby facilitating drying of the substrate with almost no charging due to friction between the substrate and the processing liquid, thereby enabling efficient drying of the substrate without reducing the reliability of the substrate.

[0125] (Item 10) In the substrate processing apparatus according to item 9, The predetermined distance may be equal to or greater than 10 mm and equal to or less than 130 mm.

[0126] In this case, it is possible to easily prevent the center of rotation of the substrate from being insufficiently dried while suppressing charging due to friction between the substrate and the processing liquid.

[0127] (Item 11) In the substrate processing apparatus according to item 9 or 10, the gas supply unit includes a gas nozzle having a discharge unit that discharges a gas; In the drying step, the gas nozzle may be disposed above a center of rotation of the substrate with the outlet portion tilted so as to face diagonally downward.

[0128] In this case, the gas can be easily supplied to a position a predetermined distance outward from the center of rotation of the substrate.

[0129] (Item 12) In the substrate processing apparatus according to item 11, The gas nozzle may be inclined at an angle of 4 degrees or more with respect to an axis perpendicular to the substrate held by the rotating holder.

[0130] In this case, charging due to friction between the substrate and the processing liquid can be more reliably suppressed.

[0131] (Item 13) In the substrate processing apparatus according to item 9 or 10, the gas supply unit includes a gas nozzle having a discharge unit that discharges a gas, In the drying step, the gas nozzle may be disposed above a position spaced the predetermined distance from the center of rotation of the substrate, with the gas nozzle standing upright with the discharge portion facing directly downward.

[0132] In this case, the gas can be easily supplied to a position a predetermined distance outward from the center of rotation of the substrate.

[0133] (Item 14) In the substrate processing apparatus according to any one of items 1 to 13, The control unit may control the spin holder so that the rotation speed of the substrate in the drying step is higher than the rotation speed of the substrate in the liquid processing step.

[0134] In this case, the substrate can be dried more efficiently.

[0135] (Item 15) In the substrate processing apparatus according to any one of items 1 to 14, The control unit may control the rotation holding unit to rotate the substrate at a first rotation speed for a fourth time during the drying process, and then rotate the substrate at a second rotation speed that is greater than the first rotation speed.

[0136] In this case, drying of the substrate is further accelerated. Also, since the amount of processing liquid remaining on the substrate has decreased by the time the substrate has rotated at the first rotation speed for the fourth time, even if the substrate is rotated at the second rotation speed, almost no charging due to friction between the substrate and the processing liquid occurs. This allows the substrate to be dried more efficiently without reducing the reliability of the substrate.

[0137] (Item 16) In the substrate processing apparatus according to item 15, The first rotational speed may be equal to or greater than 300 rpm and equal to or less than 1000 rpm.

[0138] In this case, charging due to friction between the substrate and the processing liquid can be more reliably suppressed.

[0139] (Item 17) In the substrate processing apparatus according to any one of items 1 to 16, The gas supply unit may include a gas supply pipe having a flow path through which gas supplied to the substrate flows, and a conductive part attached to the flow path so as to be groundable.

[0140] With this configuration, even if an electric charge is generated due to friction between the gas flowing through the flow path and the flow path, the electric charge can be discharged to the ground, thereby more reliably preventing the substrate from being charged.

[0141] (Item 18) The substrate processing method according to item 18 includes: In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; In the drying process after the liquid processing process, the substrate is rotated by the rotation holder, and a gas is supplied to the substrate by the gas supply unit when a first time or more has elapsed since the start of the drying process.

[0142] According to this substrate processing method, the substrate is rotated by the spin holder without supplying gas during the period from the start of the drying process until the first time, which promotes drying of the substrate to a certain extent without generating almost any charging due to friction between the substrate and the processing liquid. After that period, gas is supplied to the rotating substrate, which further promotes drying of the substrate. Since the amount of processing liquid remaining on the substrate has decreased by the time the first time has elapsed since the start of the drying process, supplying gas to the substrate hardly generates any charging due to friction between the substrate and the processing liquid. This allows the substrate to be dried efficiently without reducing its reliability.

[0143] (Item 19) The substrate processing method according to item 19 includes: In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; In the drying process after the liquid processing process, the substrate is rotated by the rotation holder, and gas is supplied to the substrate by the gas supply unit at a first flow rate that is smaller than the maximum flow rate of gas when no particles are generated from the substrate.

[0144] According to this substrate processing method, gas is supplied to the substrate at a sufficiently small flow rate, which promotes drying of the substrate without generating any charging due to friction between the substrate and the processing liquid, thereby enabling efficient drying of the substrate without reducing the reliability of the substrate.

[0145] (Item 20) The substrate processing method according to item 20 includes: In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; In the drying step after the liquid treatment step, the substrate is rotated by the rotation holder, and a gas is supplied to the substrate by the gas supply unit at a flow rate of 10 L / min or less.

[0146] According to this substrate processing method, gas is supplied to the substrate at a flow rate of 10 L / min or less. In this case, the drying of the substrate is promoted with almost no charging due to friction between the substrate and the processing liquid. This allows the substrate to be dried efficiently without reducing its reliability.

[0147] (Item 21) The substrate processing method according to item 21 includes: In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; The drying step after the liquid treatment step may include rotating the substrate by the rotation holder and supplying gas by a gas supply unit to a position a predetermined distance outward from the center of rotation of the substrate.

[0148] According to this substrate processing method, gas is supplied to a position that avoids the center of rotation of the substrate, where processing liquid is likely to remain, and therefore, the drying of the substrate is promoted with almost no charging due to friction between the substrate and the processing liquid, thereby enabling the substrate to be dried efficiently without reducing its reliability. [Explanation of symbols]

[0149] 10...rotation holding device, 11...spin motor, 11a...rotation shaft, 12...spin chuck, 20...processing cup, 21...opening, 22...waste liquid port, 23...exhaust port, 30...processing liquid supply unit, 31...processing liquid supply source, 32...processing liquid nozzle, 33...processing liquid supply pipe, 34...processing liquid valve, 35, 45...nozzle transport section, 40...gas supply unit, 41...gas supply source, 42...gas nozzle, 43...gas supply pipe, 43a...flow path section, 43b to 43d...conductive section, 44...gas valve, 50...control device, 51...rotation control section, 52, 53...transport control section, 54, 55...opening and closing control section, 100...substrate processing apparatus, W...substrate

Claims

1. a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; a control unit that, in a liquid processing step, controls the spinning holder to rotate the substrate and controls the processing liquid supply unit to supply a processing liquid to the substrate, and, in a drying step after the liquid processing step, controls the spinning holder to rotate the substrate and controls the gas supply unit to supply a gas to the substrate when a first time or more has elapsed since the start of the drying step.

2. The substrate processing apparatus of claim 1 , wherein the first time period is 40 seconds or more.

3. a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; a control unit that, in a liquid processing step, controls the spin holding unit to rotate the substrate and controls the processing liquid supply unit to supply a processing liquid to the substrate, and, in a drying step after the liquid processing step, controls the spin holding unit to rotate the substrate and controls the gas supply unit to supply a gas to the substrate at a first flow rate that is smaller than a maximum flow rate of gas when no particles are generated from the substrate.

4. 4. The substrate processing apparatus of claim 3, wherein, in the drying process, after gas is supplied to the substrate at the first flow rate for a second time, the control unit controls the gas supply unit to supply gas to the substrate at a second flow rate greater than the first flow rate.

5. The substrate processing apparatus according to claim 3 , wherein the first flow rate is less than 70 L / min.

6. a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; a control unit that, in a liquid processing step, controls the spin holding unit to rotate the substrate and controls the processing liquid supply unit to supply a processing liquid to the substrate, and, in a drying step after the liquid processing step, controls the spin holding unit to rotate the substrate and controls the gas supply unit to supply a gas to the substrate at a flow rate of 10 L / min or less.

7. 7. The substrate processing apparatus of claim 6, wherein, in the drying process, after gas is supplied to the substrate at a flow rate of 10 L / min or less for a third time, the control unit controls the gas supply unit to supply gas to the substrate at a third flow rate greater than 10 L / min.

8. The substrate processing apparatus of claim 7 , wherein the third flow rate is less than 70 L / min.

9. a rotation holder configured to hold and rotate the substrate; a processing liquid supply unit configured to be able to supply a processing liquid to the substrate; a gas supply unit configured to be able to supply gas to the substrate; a control unit that, in a liquid processing step, controls the rotation holding unit to rotate the substrate and controls the processing liquid supply unit to supply a processing liquid to the substrate, and, in a drying step after the liquid processing step, controls the rotation holding unit to rotate the substrate and controls the gas supply unit to supply a gas to a position a predetermined distance outside the rotation center of the substrate.

10. The substrate processing apparatus according to claim 9 , wherein the predetermined distance is equal to or greater than 10 mm and equal to or less than 130 mm.

11. the gas supply unit includes a gas nozzle having a discharge unit that discharges a gas, 11. The substrate processing apparatus according to claim 9, wherein the gas nozzle is arranged above a center of rotation of the substrate in a state in which the discharge portion faces obliquely downward during the drying step.

12. 12. The substrate processing apparatus according to claim 11, wherein the gas nozzle is inclined at an angle of 4 degrees or more with respect to an axis perpendicular to the substrate held by the rotating holder.

13. the gas supply unit includes a gas nozzle having a discharge unit that discharges a gas, 11. The substrate processing apparatus according to claim 9, wherein the gas nozzle is positioned above a position spaced the predetermined distance from a rotation center of the substrate in an upright state with the outlet facing directly downward during the drying process.

14. 11. The substrate processing apparatus according to claim 1, wherein the control unit controls the spin holder so that the rotation speed of the substrate in the drying step is higher than the rotation speed of the substrate in the liquid processing step.

15. 11. The substrate processing apparatus according to claim 1, wherein the control unit controls the rotation holding unit to rotate the substrate at a first rotation speed for a fourth time in the drying step, and then rotate the substrate at a second rotation speed that is higher than the first rotation speed.

16. The substrate processing apparatus of claim 15, wherein the first rotation speed is equal to or greater than 300 rpm and equal to or less than 1000 rpm.

17. 11. The substrate processing apparatus according to claim 1, wherein the gas supply section includes a gas supply pipe having a flow path section through which gas supplied to the substrate flows and a conductive section attached to the flow path section so as to be groundable.

18. In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; a drying step after the liquid processing step, rotating the substrate by the rotary holder, and supplying gas to the substrate by the gas supply unit when a first time or more has elapsed since the start of the drying step.

19. In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; a drying step after the liquid processing step, rotating the substrate by the rotation holder, and supplying gas to the substrate by the gas supply unit at a first flow rate that is smaller than a maximum flow rate of gas when no particles are generated from the substrate.

20. In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; In a drying step after the liquid processing step, the substrate is rotated by the rotation holder, and a gas is supplied to the substrate at a flow rate of 10 L / min or less by a gas supply unit.

21. In a liquid processing step, the substrate is rotated by a rotation holder and a processing liquid is supplied to the substrate by a processing liquid supply unit; a drying step after the liquid processing step, wherein the substrate is rotated by the rotation holder and a gas supply unit supplies gas to a position a predetermined distance outward from the center of rotation of the substrate.

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