System and method for extracting process control information from radio frequency supply system of plasma processing system

Abstract

SOLUTION: To provide a system in which a first radio frequency signal generator is configured to generate a low frequency signal, a second radio frequency signal generator is configured to generate a high frequency signal, the impedance matching system has a first input connected to the output of the first radio frequency signal generator and a second input connected to the output of the second radio frequency signal generator, the impedance matching system controls the impedance at the outputs of the first and second radio frequency signal generators, the output of the impedance matching system is connected to a radio frequency supply input of the plasma processing system, a control module monitors a reflected voltage at the output of the second radio frequency signal generator, and the control module determines when the reflected voltage indicates a change in impedance along the transmission path of the high frequency signal, which is indicative of a particular processing condition and / or event within the plasma processing system.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001]

[0002] The present disclosure relates to the fabrication of semiconductor devices. [Background technology]

[0003]

[0004] In the fabrication of semiconductor devices such as integrated circuits, memory cells, and the like, a series of manufacturing operations are performed to define features on a semiconductor wafer (hereinafter "wafer"). The wafer contains integrated circuit devices in the form of multi-layer structures defined on a silicon substrate. At the substrate level, transistor devices with diffusion regions are formed. At the next level, interconnect metallization lines are patterned to electrically connect to the transistor devices and define the desired integrated circuit devices. Additionally, patterned conductive layers are insulated from other conductive layers by dielectric materials.

[0005] Many modern semiconductor chip fabrication processes involve the generation of a plasma that delivers ionic and / or radical components that are used to directly or indirectly affect changes on the surface of a substrate exposed to the plasma. For example, various plasma-based processes can be used to etch material from a substrate surface, deposit material onto a substrate surface, or modify material already present on the substrate surface. Plasma is often generated by applying radio frequency (RF) power to a process gas in a controlled environment so that the process gas is energized and converted into the desired plasma. The characteristics of the plasma and the corresponding process results on the substrate are affected by many process parameters, including, but not limited to, the material composition of the process gas, the flow rate of the process gas, the geometric characteristics of the plasma generation region and surrounding structures, the temperature of the process gas and surrounding materials, the frequency of the applied RF power, the magnitude of the applied RF power, and the temporal manner in which the RF power is applied, among others. Therefore, it is important to understand, monitor, and / or control some of the process parameters that can affect the characteristics of the generated plasma and the corresponding process results on the substrate. It is within this context that the present disclosure arises. Summary of the Invention

[0006] In an exemplary embodiment, a radio frequency signal generator system for a plasma processing system is disclosed. The radio frequency signal generator system includes a first radio frequency signal generator configured to generate a low frequency signal at an output of the first radio frequency signal generator. The radio frequency signal generator system also includes a second radio frequency signal generator configured to generate a high frequency signal at an output of the second radio frequency signal generator. The radio frequency signal generator system also includes an impedance matching system having a first input connected to the output of the first radio frequency signal generator and a second input connected to the output of the second radio frequency signal generator. The impedance matching system has an output connected to a radio frequency supply input of the plasma processing system. The impedance matching system is configured to control impedance at the output of the first radio frequency signal generator and the output of the second radio frequency signal generator. The radio frequency signal generator system also includes a control module programmed to monitor a reflected voltage at the output of the second radio frequency signal generator. The control module is programmed to determine when a reflected voltage at the output of the second radio frequency signal generator indicates a change in impedance along a transmission path of the radio frequency signal, the change in impedance being indicative of a corresponding process condition and / or event within the plasma processing system.

[0007] In an exemplary embodiment, a method for operating a radio frequency signal generator system for a plasma processing system is disclosed. The method includes operating a first radio frequency signal generator to generate a low frequency signal at an output of the first radio frequency signal generator. The method also includes operating a second radio frequency signal generator to generate a high frequency signal at an output of the second radio frequency signal generator. The method also includes operating an impedance matching system to control impedances at the output of the first radio frequency signal generator and the output of the second radio frequency signal generator. The low frequency signal and the high frequency signal are transmitted through the impedance matching system to a radio frequency supply input of the plasma processing system to generate a plasma within the plasma processing system. The method also includes operating a control module to monitor a reflected voltage at the output of the second radio frequency signal generator. The method also includes operating the control module to determine when the reflected voltage at the output of the second radio frequency signal generator indicates an impedance change along a transmission path of the high frequency signal that is indicative of a particular process condition and / or event within the plasma processing system.

[0008] Other aspects and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, which illustrate, by way of example, the invention. [Brief explanation of the drawings]

[0009] [Figure 1A] FIG. 1A is an exemplary cross-sectional side view of a CCP processing system according to some embodiments of the present disclosure.

[0010] [Figure 1B] FIG. 1B is an exemplary cross-sectional side view of an ICP processing system according to some embodiments of the present disclosure.

[0011] [Figure 1C] FIG. 1C is a diagram of a control module, according to some exemplary embodiments.

[0012] [Figure 2] FIG. 2 illustrates an RF signal generator system including a low-frequency RF signal generator and a high-frequency RF signal generator, according to some embodiments.

[0013] [Figure 3] FIG. 3 is a diagram of a frequency adjustment process, according to some embodiments.

[0014] [Figure 4] FIG. 4 illustrates plots of forward and reflected RF voltages proportional to delivered and reflected high frequency RF power at the output of a high frequency RF signal generator versus a low frequency RF signal waveform at the output of the low frequency RF signal generator, in accordance with some embodiments.

[0015] [Figure 5] FIG. 5 shows the same plot as FIG. 4 at the point where the etch front has penetrated the oxide layer to the underlying silicon wafer, according to some embodiments.

[0016] [Figure 6] FIG. 6 shows the same plot as FIG. 4 at the time an arcing event occurs in the plasma processing system, according to some embodiments.

[0017] [Figure 7] FIG. 7 is a flowchart of a method for operating an RF signal generator system for a plasma processing system, according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0018] In the following description, numerous specific details are set forth to provide a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that embodiments of the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail in order to avoid unnecessarily obscuring the present disclosure.

[0019] In the semiconductor industry, semiconductor substrates may undergo fabrication operations in various types of plasma chambers, such as capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) processing chambers. In both CCP and ICP processing chambers, radio frequency (RF) power is used to energize process gases and convert them into plasma within a plasma processing region to which the substrate is exposed. Reactive and / or charged species within the plasma interact with the substrate to modify the condition of the substrate, for example, by modifying materials present on the substrate, depositing materials on the substrate, or removing / etching materials from the substrate. CCP and ICP processing chambers may include one or more electrodes for receiving RF power to generate plasma within the plasma processing region. CCP and ICP processing chambers may also include one or more electrodes for receiving RF power and / or direct current (DC) power to generate a bias voltage at the substrate and attract charged species from the plasma toward the substrate. Also, in some embodiments, the CCP and ICP processing chambers may include one or more electrically powered components, such as a heater assembly, that receive power from one or more power sources, each of which may be either a DC power source or an AC (alternating current) power source.

[0020] In some embodiments, RF signals and / or electrical (non-RF) signals present on an RF electrical transmission path connected to a CCP and / or ICP processing chamber can indicate how much RF power is actually being transmitted to a plasma load in the CCP and / or ICP processing chamber. Also, in some embodiments, RF signals and / or electrical (non-RF) signals present at the output of an RF signal generator can indicate how much RF power is being reflected from the plasma load. It is important to minimize the amount of RF power reflected from the plasma load. Additionally, changes in RF power reflected from the plasma load can provide information about changes in the impedance of the plasma and / or other impedance changes along the RF signal transmission path. Changes in the impedance of the plasma load can indicate changes in the composition of the plasma, which can indicate changes in the condition of a substrate being processed by the plasma. Disclosed herein are systems and methods for monitoring reflected RF power at the output of an RF generator to obtain information about changes in the impedance of the plasma and / or other impedance changes along the RF signal transmission path, which can be used as meaningful indicators of process conditions and / or events.

[0021] In various embodiments, RF signals and / or electrical (non-RF) signals present on the RF electrical transmission path connected to the CCP and / or ICP processing chamber may be directly measured, calculated, or used to calculate values ​​of other parameters indicative of how much RF power is actually delivered to the plasma load in the CCP and / or ICP processing chamber, as well as how much RF power is reflected by the plasma load. It is desirable to maximize the amount of forward RF power actually delivered to the plasma load in the CCP and / or ICP processing chamber and minimize the amount of reflected RF power seen at the output of the RF signal generator.

[0022] FIG. 1A illustrates an exemplary vertical cross-sectional view of a CCP processing system 100A in accordance with some embodiments of the present disclosure. The CCP processing system 100A includes a chamber 101 in which a plasma processing region 102 resides. Within the plasma processing region 102, a plasma 123 (represented by the dashed oval region) is generated upon exposure to a substrate 105, affecting changes to the substrate 105 in a controlled manner. In various fabrication processes, the changes to the substrate 105 can be changes to the material or surface conditions on the substrate 105. For example, in various fabrication processes, the changes to the substrate 105 can include one or more of etching material from the substrate 105, depositing material onto the substrate 105, or modifying material present on the substrate 105. In some embodiments, the substrate 105 is a semiconductor wafer undergoing a fabrication procedure. However, it should be understood that in various embodiments, the substrate 105 can be essentially any type of substrate undergoing a plasma-based fabrication process. For example, in some embodiments, the substrate 105 referred to herein can be a substrate formed of silicon, sapphire, GaN, GaAs, or SiC, or other substrate materials, and can include a glass panel / substrate, a metal foil, a metal sheet, a polymeric material, etc. Also, in various embodiments, the substrate 105 referred to herein can vary in form, shape, and / or size. For example, in some embodiments, the substrate 105 referred to herein can correspond to a 200 mm (millimeter) diameter semiconductor wafer, a 300 mm diameter semiconductor wafer, or a 450 mm diameter semiconductor wafer, among other semiconductor wafer sizes. Also, in some embodiments, the substrate 105 referred to herein can correspond to a non-circular substrate, such as a rectangular substrate for a flat panel display, etc., among other shapes.

[0023] The plasma processing region 102 within the CCP processing chamber 101 is connected to a process gas supply system 104, which allows one or more process gases to be supplied to the plasma processing region 102 in a controlled manner, as represented by line 106. It should be understood that the process gas supply system 104 includes one or more process gas sources and an arrangement of valves and mass flow controllers to enable the provision of one or more process gases to the plasma processing region 102 at controlled flow rates and flow times. Also, in various embodiments, the one or more process gases are delivered to the plasma processing region 102 in both a temporally and spatially controlled manner relative to the substrate 105. In various embodiments, the CCP processing system 100A operates by having the process gas supply system 104 deliver one or more process gases to the plasma processing region 102 and by applying RF power to the one or more process gases to convert the one or more process gases into a plasma 123 upon exposure to the substrate 105 to cause a change in material or surface condition on the substrate 105.

[0024] The CCP processing chamber 101 includes a substrate support structure 103 on which a substrate 105 is positioned and supported during processing operations. In some embodiments, an electrode 107 is disposed within the substrate support structure 103 and transmits RF power from the electrode 107 through the plasma processing region 102 to generate the plasma 123 and / or control ion energy. The electrode 107 is connected to receive RF power through an RF feed structure 109, which is connected to one or more RF power generators 111 by one or more impedance match systems 113. The RF feed structure 109 is an electrically conductive member. In some embodiments, the RF feed structure 109 includes an electrically conductive rod. The impedance matching system 113 includes an arrangement of capacitors and inductors configured to ensure that the impedance seen by the RF power generator 111 at the input of the impedance matching system 113 is sufficiently close to the output impedance at which the RF power generator 111 is designed to operate (typically 50 ohms) so that the RF power generated and transmitted by the RF power generator 111 is transmitted to the plasma processing region 102 as efficiently as possible, for example, with as few reflections as possible.

[0025] Also, in some embodiments, the CCP processing chamber 101 can include an upper electrode 115. In various embodiments, the upper electrode 115 can provide an electrical ground electrode or can be used to transmit RF power to the plasma processing region 102. For example, in some embodiments, the upper electrode 115 is connected to the reference ground potential 108, such that the upper electrode 115 provides a return path for the RF signal transmitted from the electrode 107 to the plasma processing region 102. Alternatively, in some embodiments, the upper electrode 115 is connected to receive RF power through an RF feed structure 117, which is connected to one or more RF power generators 121 by one or more impedance match systems 119. The impedance matching system 119 includes an arrangement of capacitors and inductors configured to ensure that the impedance seen by the RF power generator 121 at the input of the impedance matching system 119 is sufficiently close to the output impedance at which the RF power generator 121 is designed to operate (typically 50 ohms), so that the RF power generated and transmitted by the RF power generator 121 is transmitted to the plasma processing region 102 as efficiently as possible, for example, with as few reflections as possible.

[0026] In some embodiments, a heater assembly 125 is disposed within the substrate support structure 103 and controls the temperature of the substrate 105. The heater assembly 125 is electrically connected to receive power through electrical connection 127, which is supplied from a power source 131 through electrical connection 137 to an RF filter 129 and through the RF filter 129 to the electrical connection 127. In some embodiments, the power source 131 is an alternating current (AC) power source. In some embodiments, the power source 131 is a direct current (DC) power source. In some embodiments, the heater assembly 125 includes a plurality of electrical resistive heating elements. The RF filter 129 is configured to prevent RF power from entering the power source 131 while allowing transmission of electrical current between the power source 131 and the electrical connection 127.

[0027] Also, in some embodiments, a bias voltage control system 165 is connected to the substrate support structure 103 in the CCP processing chamber 101. In some embodiments, the bias voltage control system 165 is connected to one or more bias voltage electrodes disposed in the substrate support structure 103 and controls the bias voltage present at the substrate 105. The bias voltage can be controlled to attract charged components of the plasma 123 toward the substrate 105, thereby controlling the energy and directionality of the charged components of the plasma 123. For example, the bias voltage control system 165 can be operated to accelerate ions in the plasma 123 toward the substrate 105 to perform anisotropic etching on the substrate 105.

[0028] FIG. 1B illustrates an exemplary vertical cross-sectional view of an ICP processing system 100B in accordance with some embodiments of the present disclosure. The ICP processing system 100B may also be referred to as a transformer-coupled plasma (TCP) processing system. For ease of description herein, ICP processing system is used to refer to both ICP and TCP processing systems. The ICP processing system 100B includes a chamber 151 in which a plasma processing region 152 resides. Within the plasma processing region 152, a plasma 123 (represented by the dashed oval region) is generated upon exposure to a substrate 105 to affect changes to the substrate 105 in a controlled manner. In various fabrication processes, the changes to the substrate 105 may be changes to the material or surface conditions on the substrate 105. For example, in various fabrication processes, the changes to the substrate 105 may include one or more of etching material from the substrate 105, depositing material onto the substrate 105, or modifying material present on the substrate 105. It should be understood that the ICP processing chamber 151 may be any type of ICP processing chamber in which RF power is transmitted from a coil 155 located outside the ICP processing chamber 151 to a process gas within the ICP processing chamber 151 to generate a plasma 123 within a plasma processing region 152. An upper window structure 153 is provided to enable transmission of RF power from the coil 155 through the upper window structure 153 to the plasma processing region 152 of the ICP processing chamber 151.

[0029] A plasma processing region 152 within the ICP processing chamber 151 is connected to a process gas supply system 104, which allows one or more process gases to be supplied to the plasma processing region 152 in a controlled manner, as represented by line 106. The ICP processing system 100B operates by causing the process gas supply system 104 to flow one or more process gases into the plasma processing region 152 to cause a change in material or surface condition on the substrate 105, and by applying RF power to the one or more process gases through a coil 155, converting the one or more process gases into a plasma 123 upon exposure to the substrate 105. The coil 155 is disposed above the upper window structure 153. In the example of FIG. 1B, the coil 155 is formed as a radial coil assembly, with the shaded portions of the coil 155 oriented toward the inside of the page and the unshaded portions of the coil 155 oriented toward the outside of the page. However, it should be understood that in other embodiments, the coil 155 can have essentially any configuration suitable for transmitting RF power through the upper window structure 153 to the plasma processing region 152. In various embodiments, the coil 155 can have any number of turns and any cross-sectional size and shape (circular, elliptical, rectangular, trapezoidal, etc.) as needed to provide the desired transmission of RF power through the upper window structure 153 to the plasma processing region 152.

[0030] The coil 155 is connected to one or more RF power generators 157 through an RF power supply structure 161 by one or more impedance match systems 159. The impedance match systems 159 include an arrangement of capacitors and / or inductors configured to ensure that the impedance seen by the RF power generator 157 at the input of the impedance match system 159 is sufficiently close to the output impedance at which the RF power generator 157 is designed to operate (typically 50 ohms), so that the RF power supplied by the RF power generator 157 to the coil 155 is transmitted to the plasma processing region 152 as efficiently as possible, i.e., with as few reflections as possible. Also, in some embodiments, the ICP processing chamber 151 can include an electrode 107, an RF feed structure 109, an impedance match system 113, and an RF power generator 111, as described above with respect to FIG. 1A.

[0031] Additionally, in some embodiments, the ICP processing chamber 151 includes a heater assembly 125 disposed within the substrate support structure 103 to control the temperature of the substrate 105. As described with respect to the ICP processing chamber 101 of FIG. 1A, the heater assembly 125 of the ICP processing chamber 151 is electrically connected to receive power through electrical connection 127, which is provided from a power supply 131 through electrical connection 137 to an RF filter 129 and through the RF filter 129 to the electrical connection 127. Additionally, in some embodiments, a bias voltage control system 165 is connected to the substrate support structure 103 within the ICP processing chamber 151.

[0032] A control module 163 is configured and connected to control the plasma processing operations performed by the CCP processing system 100A and the ICP processing system 100B. In some embodiments, the control module 163 is implemented as a combination of computer hardware and software. The control module 163 can be configured and connected to control essentially any system or component associated with the CCP processing system 100A and / or the ICP processing system 100B. For example, the control module 163 can be configured and connected to control the process gas delivery system 104, the RF signal generator 111, the impedance matching system 113, the RF signal generator 121, the impedance matching system 119, the power supply 131 for the heater assembly 125, the bias voltage control system 165, the RF signal generator 157, the impedance matching system 159, and / or any other system or component.

[0033] The control module 163 may also be connected and configured to receive signals from various components, sensors, and monitoring devices associated with the CCP processing system 100A and the ICP processing system 100B. For example, the control module 163 may be connected and configured to receive electrical measurement signals, e.g., voltage and / or current, and RF measurement signals, from one or more of the substrate support structure 103, the RF feed structure 109, the RF feed structure 117, the RF feed structure 161, the electrical connection 127, and any other structure or component within the CCP processing system 100A and the ICP processing system 100B. The control module 163 may also be connected and configured to receive temperature and pressure measurement signals from within the plasma processing regions 102 and 152 of the CCP processing chamber 101 and the ICP processing chamber 151, respectively. In some embodiments, the control module 163 may also be configured and connected to receive, process, and respond to optically measured signals within the CCP processing chamber 101 and the ICP processing chamber 151.

[0034] It should be understood that the control module 163 can be connected and configured to control essentially any active, i.e., controllable, device associated with the operation of the CCP processing system 100A and the ICP processing system 100B. And, it should be understood that the control module 163 can be connected and configured to monitor essentially any physical and / or electrical state, condition, and / or parameter at essentially any location within the CCP processing system 100A and the ICP processing system 100B. The control module 163 can also be configured to direct the operation of various components in a synchronized and scheduled manner to perform predetermined plasma processing operations on the substrates 105. For example, the control module 163 can be configured to operate the CCP processing system 100A and the ICP processing system 100B by executing process inputs and control instructions / programs. The process inputs and control instructions / programs can include process recipes having time-dependent instructions for parameters such as power levels, timing parameters, process gases, mechanical movement of the substrates 101, etc., as needed to achieve desired process results on the substrates 105.

[0035] 1C shows a diagram of control module 163, according to some example embodiments. Control module 163 includes processor 181, storage hardware unit (HU) 183 (e.g., memory), input HU 171, output HU 175, input / output (I / O) interface 173, I / O interface 177, network interface controller (NIC) 179, and data communication bus 185. Processor 181, storage HU 183, input HU 171, output HU 175, I / O interface 173, I / O interface 177, and NIC 179 communicate data with each other via data communication bus 185. Examples of input HU 171 include a mouse, keyboard, stylus, data acquisition system, data acquisition card, etc. Examples of output HU 175 include a display, speaker, device controller, etc. Examples of NIC 179 include a network interface card, network adapter, etc. In various embodiments, NIC 179 is configured to operate according to one or more communication protocols and associated physical layers, such as Ethernet and / or EtherCAT, among others. Each of I / O interfaces 173 and 177 is defined to provide compatibility between different hardware units coupled to the I / O interface. For example, I / O interface 173 may be defined to convert signals received from input HU 171 to a format, amplitude, and / or rate compatible with data communication bus 185. I / O interface 177 may also be defined to convert signals received from data communication bus 185 to a format, amplitude, and / or rate compatible with output HU 175. While various operations described herein are performed by processor 181 of control module 163, it should be understood that in some embodiments, various operations may be performed by multiple processors of control module 163 and / or by multiple processors of multiple computing systems connected to control module 163.

[0036] 2 illustrates an RF signal generator system 200 including a low-frequency RF signal generator 201 and a high-frequency RF signal generator 202, according to some embodiments. Each of the low-frequency RF signal generator 201 and the high-frequency RF signal generator 202 is connected to provide an RF signal to the CCP / ICP processing system 100A / 100B through an impedance matching system 215. For ease of explanation, the CCP / ICP processing system 100A / 100B will hereinafter be referred to as the plasma processing system 100A / 100B. In various embodiments, the RF signal generator system 200 represents any one or more of the RF signal generators 111, 121, and 157, as described with respect to FIGS. 1A-1B. Additionally, the impedance matching system 215 represents each of the impedance matching systems 113, 119, and 159, as described with respect to FIGS. 1A-1B.

[0037] The low frequency RF signal generator 201 is configured to generate a low frequency RF signal of controlled amplitude and frequency and transmit it from an output 210 of the low frequency RF signal generator 201 through / along electrical conductor 213 to an input 217 of an impedance matching system 215. The low frequency RF signal then travels from an output 223 of the impedance matching system 215 through / along the RF feed structure 109 to an electrode (e.g., 107, 115, 155) in the plasma processing system 100A / 100B. In the case of the CCP processing system 100A, the low frequency RF signal travels through the plasma processing region 102 to generate the plasma 123. In the case of the ICP processing system 100B, the low frequency RF signal travels through the plasma processing region 152 to generate the plasma 123.

[0038] Similarly, the high frequency RF signal generator 202 is configured to generate and transmit a high frequency RF signal of controlled amplitude and frequency from an output 271 of the high frequency RF signal generator 202 through / along conductor 273 to an input 275 of the impedance matching system 215. The high frequency RF signal then travels from an output 223 of the impedance matching system 215 through / along RF feed structure 109 to an electrode (e.g., 107, 115, 155) in the plasma processing system 100A / 100B. In the case of the CCP processing system 100A, the high frequency RF signal travels through the plasma processing region 102 to generate the plasma 123. In the case of the ICP processing system 100B, the high frequency RF signal travels through the plasma processing region 152 to generate the plasma 123.

[0039] The impedance matching system 215 includes a combination of capacitors and inductors configured and connected in an electrical circuit to match the impedance at the output 210 of the low-frequency RF signal generator 201 to a design impedance (typically 50 ohms). The impedance matching system 215 also includes a combination of capacitors and inductors configured and connected in an electrical circuit to match the impedance at the output 271 of the high-frequency RF signal generator 202 to a design impedance (typically 50 ohms). The impedance matching system 215 also includes a network interface controller 239 that enables the impedance matching system 215 to send and receive data to and from systems external to the impedance matching system 215. Examples of the network interface controller 239 include a network interface card, a network adapter, etc. In various embodiments, the network interface controller 239 is configured to operate according to one or more network communication protocols and associate physical layers such as Ethernet and / or EtherCAT, among others.

[0040] The low-frequency RF signal generator 201 includes an oscillator 203 for generating an RF signal. The oscillator 203 is an electronic circuit that generates a periodic oscillating electrical signal, such as a sinusoidal electrical signal, having a particular frequency within the RF range. In some embodiments, the oscillator 203 is a low-frequency oscillator capable of oscillating within a frequency range extending from about 50 kilohertz (kHz) to about 3 megahertz (MHz). In some embodiments, the oscillator 203 is configured to generate a low-frequency RF signal of about 400 kHz. The output of the oscillator 203 is connected to the input of a power amplifier 205. The power amplifier 205 operates to amplify the low-frequency RF signal generated by the oscillator 203 and transmit the amplified low-frequency RF signal through the output of the power amplifier 205 to an output 210 of the low-frequency RF signal generator 201.

[0041] The low-frequency RF signal generator 201 also includes a control system 209 configured to control all operational aspects of the low-frequency RF signal generator 201. In some embodiments, the control system 209 is configured similarly to the control module 163 of the plasma processing system 100A / 100B. For example, in some embodiments, the control system 209 includes a processor, a data storage device, an input / output interface, and a data bus through which the processor, the data storage device, and the input / output interface communicate data with each other. The control system 209 is connected to control the oscillator 203, as indicated by connection 204. The control system 209 is also connected to control the power amplifier 205, as indicated by connection 206. The control system 209 also includes a network interface controller 211 that enables the control system 209 to send and receive data to and from systems external to the low-frequency RF signal generator 201. Examples of the network interface controller 211 include a network interface card, a network adapter, etc. In various embodiments, the network interface controller 211 is configured to operate according to one or more network communication protocols and to associate physical layers such as Ethernet and / or EtherCAT, among others.

[0042] It should be understood that the control system 209 is connected and configured to control essentially any aspect of the low-frequency RF signal generator 201. And, it should be understood that the control system 209 can be connected and configured to monitor essentially any physical and / or electrical state, condition, and / or parameter at essentially any location within the low-frequency RF signal generator 201. The control system 209 is also configured to direct the operation of the low-frequency RF signal generator 201 according to a predetermined algorithm. For example, the control system 209 is configured to operate the low-frequency RF signal generator 201 by executing input and control instructions / programs. The input and control instructions / programs include target RF power setpoints and target frequency setpoints, among other parameters associated with the operation and control of the low-frequency RF signal generator 201.

[0043] The low frequency RF signal generator 201 also includes a voltage / current (V / I) sensor 207 connected to an output 210 of the low frequency RF signal generator 201. The V / I sensor 207 is connected to a control system 209, as shown by connection 208. In this configuration, the V / I sensor 207 provides the control system 209 with a real-time measurement of the voltage and current present on the output 210 of the low frequency RF signal generator 201. It should be understood that the V / I sensor 207 is located within the low frequency RF signal generator 201.

[0044] The high frequency RF signal generator 202 includes an oscillator 277 for generating an RF signal. The oscillator 277 is an electronic circuit that generates a periodic oscillating electrical signal, such as a sinusoidal electrical signal, having a particular frequency within the RF range. In some embodiments, the oscillator 277 is a high frequency oscillator capable of oscillating within a frequency range extending from about 10 MHz to about 130 MHz. In some embodiments, the oscillator 277 is configured to generate a high frequency RF signal of about 60 MHz. The output of the oscillator 277 is connected to the input of a power amplifier 279. The power amplifier 279 operates to amplify the high frequency RF signal generated by the oscillator 277 and transmit the amplified high frequency RF signal to the output 271 of the high frequency RF signal generator 202 through the output of the power amplifier 279.

[0045] The high frequency RF signal generator 202 also includes a control system 281 configured to control all operational aspects of the high frequency RF signal generator 202. In some embodiments, the control system 281 is configured similarly to the control module 163 of the plasma processing system 100A / 100B. For example, in some embodiments, the control system 281 includes a processor, a data storage device, an input / output interface, and a data bus through which the processor, the data storage device, and the input / output interface communicate data with each other. The control system 281 is connected to control the oscillator 277, as shown by connection 278. The control system 281 is also connected to control the power amplifier 279, as shown by connection 280. The control system 281 also includes a network interface controller 283 that enables the control system 281 to send and receive data to and from systems external to the high frequency RF signal generator 202. Examples of the network interface controller 283 include a network interface card, a network adapter, etc. In various embodiments, the network interface controller 283 is configured to operate according to one or more network communication protocols and to associate physical layers such as Ethernet and / or EtherCAT, among others.

[0046] It should be understood that the control system 281 is connected and configured to control essentially any aspect of the high frequency RF signal generator 202. And, it should be understood that the control system 281 can be connected and configured to monitor essentially any physical and / or electrical state, condition, and / or parameter at essentially any location within the high frequency RF signal generator 202. The control system 281 is also configured to direct the operation of the high frequency RF signal generator 202 according to a predetermined algorithm. For example, the control system 281 is configured to operate the high frequency RF signal generator 202 by executing input and control instructions / programs. The input and control instructions / programs include target RF power setpoints and target frequency setpoints, among other parameters associated with the operation and control of the high frequency RF signal generator 202.

[0047] High frequency RF signal generator 202 also includes a voltage / current (V / I) sensor 285 connected to output 271 of high frequency RF signal generator 202. V / I sensor 285 is connected to control system 281, as shown by connection 282. In this configuration, V / I sensor 285 provides control system 281 with a real-time measurement of the voltage and current present on output 271 of high frequency RF signal generator 202. It should be understood that V / I sensor 285 is located within high frequency RF signal generator 202.

[0048] In some embodiments, the control system 209 of the low frequency RF signal generator 201 is programmed to determine the real-time reflection coefficient (or gamma (Γ)) at the output 210 of the low frequency RF signal generator 201, where Γ=V r / V f and V r is the complex amplitude of the reflected RF signal, and V fis the complex amplitude of the forward RF signal. In some embodiments, the control system 209 of the low frequency RF signal generator 201 is also programmed to determine a voltage standing wave ratio (VSWR) at the output 210 of the low frequency RF signal generator 201, where VSWR=||V max | / |V min |=(1+|Γ|) / (1-|Γ|), and |V max |=|V f |+|V r | and |V min |=|V f |-|V r |. Minimization of reflected RF power associated with the low-frequency RF signal generated by the low-frequency RF signal generator 201 occurs when the reflection coefficient at the output 210 of the low-frequency RF signal generator 201 is as close to zero as possible. Also, minimization of reflected RF power associated with the low-frequency RF signal generated by the low-frequency RF signal generator 201 occurs when the VSWR at the output 210 of the low-frequency RF signal generator 201 is as close to one as possible, with one being the smallest possible value for VSWR. In some embodiments, the control system 209 is programmed to calculate a real-time reflection coefficient and / or VSWR at the output 210 of the low-frequency RF signal generator 201 using the real-time measured voltage at the output 210 of the low-frequency RF signal generator 201. The real-time reflection coefficient and / or VSWR at the output 210 of the low frequency RF signal generator 201, determined using voltage measurements taken within the low frequency RF signal generator 201, can be used as a feedback signal to minimize the reflection coefficient as close to zero as possible and / or minimize the VSWR as close to one as possible.

[0049] Similarly, in some embodiments, the control system 281 of the high frequency RF signal generator 202 is programmed to determine the reflection coefficient (or gamma (Γ)) and VSWR at the output 271 of the high frequency RF signal generator 202. Minimization of the reflected RF power associated with the high frequency RF signal generated by the high frequency RF signal generator 202 occurs when the reflection coefficient at the output 271 of the high frequency RF signal generator 202 is as close to zero as possible. Also, minimization of the reflected RF power associated with the high frequency RF signal generated by the high frequency RF signal generator 202 occurs when the VSWR at the output 271 of the high frequency RF signal generator 202 is as close to one as possible, with one being the smallest possible value for VSWR. In some embodiments, the control system 281 is programmed to calculate the real-time reflection coefficient and / or VSWR at the output 271 of the high frequency RF signal generator 202 using the real-time measured voltage at the output 271 of the high frequency RF signal generator 202. The real-time reflection coefficient and / or VSWR at output 271 of high frequency RF signal generator 202, determined using voltage measurements taken within high frequency RF signal generator 202, can be used as a feedback signal to minimize the reflection coefficient as close to zero as possible and / or minimize the VSWR as close to one as possible at output 271 of high frequency RF signal generator 202. The real-time reflection coefficient and / or VSWR at output 271 of high frequency RF signal generator 202, determined using voltage measurements taken within high frequency RF signal generator 202, can also be used to determine the reflected RF power at output 271 of high frequency RF signal generator 202.

[0050] The control module 163 is connected to the control system 209 of the low-frequency RF signal generator 201 by NIC 179 and NIC 211, as shown by connection 243. The control module 163 is connected to the control system 281 of the high-frequency RF signal generator 202 by NIC 179 and NIC 283, as shown by connection 244. The control module 163 is connected to the impedance matching system 215 by NIC 179 and NIC 239, as shown by connection 245. In some embodiments, the control module 163 is programmed to direct the operation of the low-frequency RF signal generator 201 and the high-frequency RF signal generator 202 according to a frequency adjustment process. The frequency adjustment process automatically adjusts the operating frequency of the low-frequency RF signal generator 201 around a target frequency of the low-frequency signal to minimize the reflected voltage at the output 210 of the low-frequency RF signal generator 201. Also, in the frequency adjustment process, the operating frequency of the high frequency RF signal generator 202 is automatically adjusted near the target frequency of the high frequency signal to minimize the reflected voltage at the output 271 of the high frequency RF signal generator 202. In the frequency adjustment process, the operating frequency of the high frequency RF signal generator 202 is adjusted separately with respect to the target frequency of the high frequency signal in each of a plurality of time bins that collectively span a complete cycle of the low frequency signal generated by the low frequency RF signal generator 201, and the plurality of time bins and the corresponding separate operating frequency adjustments (of the high frequency RF signal generator 202) are repeated in sequence over each cycle of the low frequency signal generated by the low frequency RF signal generator 201.

[0051] FIG. 3 shows a diagram of a frequency adjustment process, according to some embodiments. The upper plot 301 shows a curve 303 of the voltage measured at the output 210 of the low-frequency RF signal generator 201 as a function of time. The curve 303 represents the low-frequency signal generated by the low-frequency RF signal generator 201. The low-frequency signal is a sinusoidal signal characterized by repeating cycles. In the upper plot 301, a given cycle of the low-frequency signal begins at point P1 and ends at point P3, with point P2 indicating the location of a half-cycle. In the example of FIG. 3, a cycle of the low-frequency signal begins where the low-frequency signal crosses the zero voltage level in a positive direction. This starting location of a cycle of the low-frequency signal is referred to herein as the positive-going zero-voltage crossing of the low-frequency signal. The location of a half-cycle occurs where the low-frequency signal crosses the zero voltage level in a negative direction. The cycle of the low-frequency signal ends where the low-frequency signal crosses the zero voltage level again in a positive direction. A cycle of the low-frequency signal is divided into a number of time bins B1 through B(N), where N is the total number of time bins. The example in FIG. 3 shows that a cycle of the low-frequency signal is divided into 20 (N=20) time bins B1 through B(N). The first time bin B1 of the number of time bins B1 through B(N) begins at a positive-going zero-voltage crossing of a complete cycle of the low-frequency signal. The last time bin B(N) of the number of time bins B1 through B(N) ends at the next positive-going zero-voltage crossing of a complete cycle of the low-frequency signal.

[0052] It should be understood that the 20 time bins (N=20) in FIG. 3 are shown as an example. In other embodiments, the plurality of time bins B1-B(N) can be set such that N is either less than or greater than 20. The example of FIG. 3 also shows that each of the plurality of time bins B1-B(N) covers an equal amount of time. However, in other embodiments, different respective plurality of time bins B1-B(N) can be defined to cover different amounts of time. For example, if greater resolution in adjusting the frequency of a high-frequency signal such as generated by high-frequency RF signal generator 202 is needed along a particular portion of a cycle of a low-frequency signal such as generated by low-frequency RF signal generator 201, some of the plurality of time bins B1-B(N) along that particular portion of the cycle of the low-frequency signal can each be defined to cover a shorter amount of time.

[0053] 3 also includes a lower plot 305 illustrating the adjustment of the operating frequency of the high frequency RF signal generator 202 in each of a plurality of time bins B1-B20 that collectively span a complete cycle of the low frequency signal generated by the low frequency RF signal generator 201. The operating frequency of the high frequency RF signal generator 202 is set to an adjusted frequency during each of the plurality of time bins B1-B20. The adjusted operating frequency of the high frequency RF signal generator 202 in any given one of the plurality of time bins B1-B(N) is set separately and independently from the others of the plurality of time bins B1-B(N). In some embodiments, the adjusted frequency of a given one of the plurality of time bins B1-B(N) is determined by a frequency adjustment amount (f) relative to a target frequency (HF0) of the high frequency signal generated by the high frequency RF signal generator 202. adj ) are integer multiples of the frequency adjustment amount (f adj ) are shown. As shown in FIG. 3, the adjusted frequency of a given one of the time bins B1 to B20 is determined by the frequency adjustment amount (f) relative to the target frequency (HF0). adj) is an integer multiple of the frequency adjustment amount (f). In some embodiments, the integer multiple is one of -4, -3, -2, -1, 0, +1, +2, +3, and +4. However, in other embodiments, integer multiples less than -4 and / or greater than +4 can be used. Also, in some embodiments, the integer multiple is replaced by a fractional multiple. Also, in some embodiments, the frequency adjustment amount (f adj ) is set as the target frequency of the low-frequency signal generated by the low-frequency RF signal generator 201. In the example of FIG. 3, when the target frequency of the low-frequency signal generated by the low-frequency RF signal generator 201 is 400 kHz, the bin level operating frequency of the high-frequency RF signal generator 202 is set as −4(f adj ) at HF0-1600kHz, -3(f adj ) at HF0-1200kHz, -2(f adj ) at HF0-800kHz, and -1(f adj ) and HF 0-400kHz, 0(f adj ) and HF0, and +1(f adj ) and HF0+400kHz, and +2(f adj ) and HF0+800kHz, and +3(f adj ) and HF0+1200kHz, and +4(f adj ) and HF0+1600 kHz. The operating frequency of the high frequency RF signal generator 202 for a given one of the plurality of time bins B1 to B(N), for example, the frequency adjustment amount (f adj ) is empirically determined as the frequency adjustment that minimizes the reflected RF power at the output 271 of the high frequency RF signal generator 202 during a given one of the multiple time bins B1-B(N). Also, in some embodiments, the frequency adjustment amount (f adj ) is set to a frequency that is a determined amount different from the target frequency of the low frequency signal generated by the low frequency RF signal generator 201.

[0054] The adjusted frequency of the high frequency RF signal generator 202 across multiple time bins B1-B(N) is repeated for each cycle of the low frequency signal generated by the low frequency RF signal generator 201. Periodically, the frequency adjustment process readjusts (redetermines) the adjusted frequency of the high frequency RF signal generator 202 for multiple time bins B1-B(N) to ensure that reflected RF power at the output 271 of the high frequency RF signal generator 202 is minimized as much as possible. In some embodiments, the frequency adjustment process is implemented by programming the control module 163, which directs the operation of the control system 209 in the low frequency RF signal generator 201 and the control system 281 in the high frequency RF signal generator 202.

[0055] FIG. 4 shows plots of the forward and reflected high frequency RF voltages at the output 271 of the high frequency RF signal generator 202 relative to a low frequency RF signal waveform at the output 210 of the low frequency RF signal generator 201, according to some embodiments. The plots in FIG. 4 correspond to the operation of the low frequency RF signal generator 201 and the high frequency RF signal generator 202 through the frequency adjustment process described above to generate a plasma for etching oxide from a silicon wafer. FIG. 4 includes an upper plot 401 showing a curve 303 of voltage measured as a function of time at the output 210 of the low frequency RF signal generator 201, as described above with respect to FIG. 3. The curve 303 represents the low frequency signal generated by the low frequency RF signal generator 201. FIG. 4 also includes a lower plot 403 showing a reflected RF voltage 405 as a function of time measured at the output 271 of the high frequency RF signal generator 202. The reflected RF voltage 405 is the white area in the lower plot 403. Lower plot 403 also shows forward RF voltage 407 as a function of time. Forward RF voltage 407 is the gray area in lower plot 403.

[0056] Changes in impedance along the high-frequency RF signal transmission path manifest as changes in the reflected RF voltage 405 as a function of time measured at the output 271 of the high-frequency RF signal generator 202. Because the frequency adjustment process is defined to minimize reflected RF power, a sufficiently large change in impedance along the high-frequency RF signal transmission path can detune the system, causing a corresponding detectable increase in the reflected RF voltage 405 at the output 271 of the high-frequency RF signal generator 202. Changes in impedance along the high-frequency RF signal transmission path can indicate significant conditions and / or events in the plasma process and / or plasma processing system 100A / 100B. Thus, detecting changes in the reflected RF voltage 405 as a function of time measured at the output 271 of the high-frequency RF signal generator 202 can be used as an indicator of significant conditions and / or events in the plasma process and / or plasma processing system 100A / 100B. For example, FIG. 5 shows the same plot as FIG. 4 at the time the etch front penetrates the oxide layer and reaches the underlying silicon wafer, according to some embodiments. In FIG. 5 , a significant and detectable change occurs in the reflected RF voltage 405 as a function of time measured at the output 271 of the high frequency RF signal generator 202. Specifically, at or near the positive-going zero-voltage crossing of the low frequency RF signal (points P1 / P3), the reflected RF voltage 405 of the high frequency RF signal has a perturbation 501 when compared to the plot in FIG. 4 , which corresponds to the etch front moving through the oxide layer. The perturbation 501 indicates that a change in impedance has occurred along the high frequency RF signal transmission path. In some embodiments, changes in the plasma impedance affect harmonics of the high frequency RF signal, which may appear as a change in reflected RF power. In this example, the change in impedance indicated by the perturbation 501 is caused by a change in the composition of the plasma, which is caused by the etch front moving from the oxide layer to the underlying silicon wafer. Thus, in this example, the perturbation 501 in the reflected RF voltage 405 of the high frequency RF signal indicates an endpoint condition for removing the oxide layer from the silicon wafer.In some embodiments, the control module 163 is programmed to automatically command a stop of the etching process upon detecting a signature of a perturbation 501 in the reflected RF voltage 405 measured at the output 271 of the high frequency RF signal generator 202. Note that impedance changes along the high frequency RF signal transmission path caused by changes in the composition of the plasma are most noticeable at or near the time locations of the positive-going zero voltage crossings of the low frequency RF signal generated by the low frequency RF signal generator 201. Therefore, changes in the plasma impedance can be detected by monitoring the time bins (of the plurality of time bins B1 through B(N)) corresponding to the positive-going zero voltage crossings of the low frequency RF signal generated by the low frequency RF signal generator 201.

[0057] It should be understood that removal of an oxide layer from a silicon wafer is used herein for illustrative purposes. In many other embodiments, different types of perturbations in the reflected RF voltage 405 of the high frequency RF signal indicate different types of impedance changes along the high frequency RF signal transmission path, which in turn indicate different significant conditions and / or events in the plasma process and / or plasma processing system 100A / 100B. For example, in some embodiments, the perturbation in the reflected RF voltage 405 of the high frequency RF signal indicates an etch front moving from one material to another on the substrate, which may or may not correspond to an endpoint condition and can be used as a feedback signal for process control purposes. For example, upon detection of a perturbation in the reflected RF voltage 405 of the high frequency RF signal (as measured at the output 271 of the high frequency RF signal generator 202) indicating the movement of an etch front from one material to another on the substrate, the control module 163 is programmed to adjust the process gas composition and / or RF power supply parameters for the next step in the plasma processing recipe.

[0058] Additionally, in some embodiments, rapid and transient perturbations in the reflected RF voltage 405 of the high-frequency RF signal indicate an arcing event within the plasma processing system. Such arcing events can be dangerous to both the substrate being fabricated and the plasma processing system. Therefore, it is advantageous to be able to detect arcing events by monitoring perturbations in the reflected RF voltage 450 of the high-frequency RF signal. FIG. 6 shows the same plot as FIG. 4 at the time an arcing event occurs within the plasma processing system 100A / 100B, according to some embodiments. In FIG. 6, a noticeable and detectable change in the reflected RF voltage 405 as a function of time measured at the output 271 of the high-frequency RF signal generator 202 appears as a perturbation 601 indicative of an arcing event. The perturbation is characterized as rapid and transient. For example, in some embodiments, the perturbation 601 indicative of the occurrence of an arcing event appears and disappears within one cycle of the low-frequency signal generated by the low-frequency RF signal generator 201. The duration of an arcing event is typically very short, on the order of tens of nanoseconds, much shorter than the duration of a complete cycle of the low-frequency signal. In some embodiments, the control module 163 is programmed to analyze reflected RF power data measured at the output 271 of the high frequency RF signal generator 202 and identify the occurrence of a perturbation 601 indicative of an arcing event. In some embodiments, the control module 163 is programmed to direct an automatic shutdown of the plasma process upon detecting a perturbation 601 indicative of an arcing event.

[0059] In some embodiments, a slow, sustained change in the reflected RF voltage 405 of the high frequency RF signal, e.g., that is consistent across multiple plasma processing operations, indicates a change in chamber conditions within the plasma processing system, such as a buildup of by-products on surfaces within the plasma processing system. This slow, sustained change in the reflected RF voltage 405 of the high frequency RF signal can be detected by the control module 163, which is programmed to send an alert. Additionally, in some embodiments, the change in the reflected RF voltage 405 of the high frequency RF signal can be used to detect the completion of a waferless automatic cleaning (WAC) process for the plasma processing system. For example, a non-optimal and / or unstable signature may be present in the reflected RF voltage 405 of the high frequency RF signal until the WAC reaches an endpoint and the condition of the surfaces within the plasma processing system becomes essentially constant / clean (at which point the reflected RF voltage 405 of the high frequency RF signal stabilizes).

[0060] In some embodiments, the frequency adjustment process causes an automatic change in the operating frequency of the high frequency RF signal generator 202 to mitigate the counter perturbation 501 in the reflected RF voltage 405 of the high frequency RF signal. In these embodiments, the automatic change in the operating frequency of the high frequency RF signal generator 202 can be used as an indicator of the presence of the counter perturbation in the reflected high frequency RF power. In some embodiments, the control module 163 is programmed to directly detect the perturbation in the reflected high frequency RF power at the output 271 of the high frequency RF signal generator 202 or indirectly detect the perturbation in the reflected high frequency RF power by detecting an automatic change in the operating frequency of the high frequency RF signal generator 202 corresponding to the frequency adjustment process that attempts to mitigate the perturbation in the reflected high frequency RF power.

[0061] In accordance with the foregoing, an RF signal generator system 200 for plasma processing system 100A / 100B is disclosed herein. The RF signal generator system 200 includes a low-frequency RF signal generator 201 (a first RF signal generator) configured to generate a low-frequency signal at an output 210 of the low-frequency RF signal generator 201. The RF signal generator system 200 also includes a high-frequency RF signal generator 202 (a second RF signal generator) configured to generate a high-frequency signal at an output 271 of the high-frequency RF signal generator 202. The RF signal generator system 200 also includes an impedance matching system 215 having a first input 217 connected to the output 210 of the low-frequency RF signal generator 201 and a second input 275 connected to the output 271 of the high-frequency RF signal generator 202. The impedance matching system 215 has an output 223 connected to the radio frequency supply input (RF feed structure 109) of the plasma processing system 100A / 100B. The impedance matching system 215 is configured to control the impedance at the output 210 of the low frequency RF signal generator 201 and the output 271 of the high frequency RF signal generator 202. The RF signal generator system 200 also includes a control module 163 that is programmed to monitor a reflected voltage at the output 271 of the high frequency RF signal generator 202. The control module 163 is programmed to determine when the reflected voltage at the output 271 of the high frequency RF signal generator indicates a change in impedance along the transmission path of the high frequency signal that is indicative of a particular process condition and / or event. In some embodiments, the control system 281 of the high frequency RF signal generator 202 is programmed to monitor the reflected voltage at the output 271 of the high frequency RF signal generator 202 and determine when the reflected voltage at the output 271 of the high frequency RF signal generator indicates a change in impedance along the transmission path of the high frequency signal that is indicative of a particular process condition and / or event.

[0062] In some embodiments, the control module 163 (or control system 281) is programmed to correlate a rapid and sustained change in the reflected voltage at the output 271 of the high frequency RF signal generator 202 with a change in the impedance of the plasma generated by the low frequency signal and the high frequency signal. In some embodiments, the control module 163 (or control system 281) is programmed to signal an endpoint of the plasma process upon correlation of a rapid and sustained change in the reflected voltage at the output 271 of the high frequency RF signal generator 202 with a change in the impedance of the plasma. In some embodiments, the plasma process is an etching process. In some embodiments, the control module 163 (or control system 281) is programmed to signal a transition in the plasma process upon correlation of a rapid and sustained change in the reflected voltage at the output 271 of the high frequency RF signal generator 202 with a change in the impedance of the plasma. In some embodiments, the transition in the plasma process is exposure of a particular material on the substrate to the plasma.

[0063] In some embodiments, the control module 163 (or control system 281) is programmed to correlate a rapid, transient change in the reflected voltage at the output 271 of the high frequency RF signal generator 202 to an arcing event. In these embodiments, the control module 163 (or control system 281) is also programmed to signal the detection of an arcing event. In some embodiments, the control module 163 (or control system 281) is programmed to correlate a slow, sustained change in the reflected voltage at the output 271 of the high frequency RF signal generator 202 to a change in a condition of the plasma processing system 100A / 100B. In these embodiments, the control module 163 (or control system 281) is programmed to signal the detection of a change in a condition of the plasma processing system 100A / 100B. In some embodiments, the change in a condition of the plasma processing system 100A / 100B is a buildup of by-product material on one or more surfaces within the plasma processing system 100A / 100B.

[0064] In some embodiments, the control module 163 (or control system 281) is programmed to correlate a rapid and sustained change in the reflected voltage at the output 271 of the high frequency RF signal generator 202 to an endpoint of a waferless automatic cleaning process being performed on the plasma processing system 100A / 100B. In some embodiments, the control module 163 (or control system 281) is programmed to compare the reflected voltage at the output 271 of the high frequency RF signal generator 202 to one or more of a plurality of stored reflected voltage signatures, e.g., waveforms, each associated with a plurality of conditions and / or events, and determine whether a corresponding condition / event has occurred. In these embodiments, the control module 163 (or control system 281) is also programmed to signal the occurrence of the corresponding condition / event.

[0065] In some embodiments, control module 163 (or a combination of control system 209 and control system 281) is programmed to direct the operation of low-frequency RF signal generator 201 and high-frequency RF signal generator 202 according to a frequency adjustment process. The frequency adjustment process automatically adjusts the operating frequency of low-frequency RF signal generator 201 around a target frequency of the low-frequency signal to minimize the reflected voltage at output 210 of low-frequency RF signal generator 201. The frequency adjustment process also automatically adjusts the operating frequency of high-frequency RF signal generator 202 around a target frequency of the high-frequency signal to minimize the reflected voltage at output 271 of high-frequency RF signal generator 202. The operating frequency of high-frequency RF signal generator 202 is adjusted separately with respect to the target frequency of the high-frequency signal in each of a plurality of time bins B1-B(N) that collectively span a complete cycle of the low-frequency signal generated by low-frequency RF signal generator 201. The multiple time bins B1 to B(N) and the corresponding separate operating frequency adjustments of the high frequency RF signal generator 202 are repeated in sequence over each cycle of the low frequency signal generated by the low frequency RF signal generator 201.

[0066] In some embodiments, a first time bin B1 of the plurality of time bins B1-B(N) begins at a positive-going zero voltage crossing of a complete cycle of the low-frequency signal generated by the low-frequency RF signal generator 201. Also, a last time bin B(N) of the plurality of time bins B1-B(N) ends at a positive-going zero voltage crossing of a complete cycle of the low-frequency signal generated by the low-frequency RF signal generator 201. In some embodiments, the operating frequency of the high-frequency RF signal generator 202 is set to an adjusted frequency in each of the plurality of time bins B1-B(N). The adjusted frequency in any given one of the plurality of time bins B1-B(N) is set independently and separately with respect to the other ones of the plurality of time bins B1-B(N). In some embodiments, the adjusted frequency of a given one of the plurality of time bins B1-B(N) is set by a frequency adjustment amount (f) relative to a target frequency (HF0) of the high-frequency signal generated by the high-frequency RF signal generator 202. adj In some embodiments, the integer multiple is one of −4, −3, −2, −1, 0, +1, +2, +3, and +4, and the frequency adjustment amount (f adj ) is the target frequency of the low frequency signal generated by the low frequency RF signal generator 201. In some embodiments, the control module 163 (or control system 281) is programmed to correlate the rapid and sustained change in the reflected voltage at the output 271 of the high frequency RF signal generator 202, which occurs at the positive-going zero voltage crossing of a complete cycle of the low frequency signal, to the change in impedance of the plasma generated by the low frequency signal and the high frequency signal.

[0067] 7 shows a flowchart of a method for operating an RF signal generator system 200 for a plasma processing system 100A / 100B in accordance with some embodiments. The method includes an operation 701 for operating a low-frequency RF signal generator 201 (a first RF signal generator) to generate a low-frequency signal at an output 210 of the low-frequency RF signal generator. The method also includes an operation 703 for operating a high-frequency RF signal generator 202 (a second RF signal generator) to generate a high-frequency signal at an output 271 of the high-frequency RF signal generator 202. The method also includes an operation 705 for operating an impedance matching system 215 to control the impedance at the output 210 of the low-frequency RF signal generator 201 and the output 271 of the high-frequency RF signal generator 202. The low-frequency signal and the high-frequency signal are transmitted through the impedance matching system 215 to a radio frequency supply input of the plasma processing system 100A / 100B to generate a plasma in the plasma processing system 100A / 100B. The method further includes an operation 707 for operating the control module 163 (or control system 281) to monitor the reflected RF voltage at the output 271 of the high frequency RF signal generator 202. The method also includes an operation 709 for operating the control module 163 (or control system 281) to determine when the reflected RF voltage at the output 271 of the high frequency RF signal generator 202 indicates a change in impedance along the transmission path of the high frequency signal that is indicative of a particular process condition and / or event within the plasma and / or plasma processing system 100A / 100B.

[0068] In some embodiments, the method includes identifying a change in plasma impedance by detecting a rapid and sustained change in reflected RF voltage at the output 271 of the high frequency RF signal generator 202. In some embodiments, the method includes signaling an endpoint of the plasma process upon identifying the change in plasma impedance. In some embodiments, the plasma process is an etching process. In some embodiments, the method includes signaling a transition in the plasma process upon identifying the change in plasma impedance. In some embodiments, the transition in the plasma process is exposure of a particular material on the substrate to the plasma. In some embodiments, the method includes identifying an arcing event in the plasma processing system 100A / 100B by detecting a rapid and transient change in reflected RF power at the output 271 of the high frequency RF signal generator 202. Also in these embodiments, the method includes signaling the identification of the arcing event. In some embodiments, the method includes identifying a change in a condition of the plasma processing system 100A / 100B by detecting a slow and sustained change in reflected RF power at the output 271 of the high frequency RF signal generator 201. In these embodiments, the method includes signaling detection of a change in a condition of the plasma processing system 100A / 100B. In some embodiments, the change in a condition of the plasma processing system 100A / 100B is a buildup of by-product material on one or more surfaces within the plasma processing system 100A / 100B.

[0069] In some embodiments, the method includes performing a waferless automatic cleaning process on the plasma processing system 100A / 100B and stopping the waferless automatic cleaning process upon detecting a rapid and sustained change in reflected RF power at the output 271 of the high frequency RF signal generator 202. In some embodiments, the method includes identifying the occurrence of a particular condition / event within the plasma processing system 100A / 100B by comparing the reflected RF voltage at the output 271 of the high frequency RF signal generator 202 to stored reflected RF voltage signatures, e.g., waveforms, associated with different conditions and / or events within the plasma and / or plasma processing system, respectively. Also in these embodiments, the method includes signaling the occurrence of the particular condition / event.

[0070] In some embodiments, the method includes operating the low-frequency RF signal generator 201 and the high-frequency RF signal generator 202 according to a frequency adjustment process. The frequency adjustment process automatically adjusts the operating frequency of the low-frequency RF signal generator 201 near a target frequency of the low-frequency signal to minimize reflected RF voltage at the output 210 of the low-frequency RF signal generator 201. The frequency adjustment process also automatically adjusts the operating frequency of the high-frequency RF signal generator 202 near the target frequency of the high-frequency signal to minimize reflected RF voltage at the output 271 of the high-frequency RF signal generator 202. The operating frequency of the high-frequency RF signal generator 202 is separately adjusted with respect to the target frequency of the high-frequency signal in each of a plurality of time bins B1-B(N) that collectively span a complete cycle of the low-frequency signal generated by the low-frequency RF signal generator 201. The plurality of time bins B1-B(N) and the corresponding separate operating frequency adjustments of the high-frequency RF signal generator 202 are repeated in sequence over each cycle of the low-frequency signal generated by the low-frequency RF signal generator 201.

[0071] In some embodiments, a first time bin B1 of the plurality of time bins B1-B(N) begins at a positive-going zero voltage crossing of a complete cycle of the low-frequency signal generated by the low-frequency RF signal generator 201. And, a last time bin B(N) of the plurality of time bins B1-B(N) ends at a positive-going zero voltage crossing of a complete cycle of the low-frequency signal generated by the low-frequency RF signal generator 201. In some embodiments, the method includes setting an operating frequency of the high-frequency RF signal generator 202 to an adjusted frequency in each of the plurality of time bins B1-B(N). The adjusted frequency in any given one of the plurality of time bins B1-B(N) is set independently and separately with respect to the other ones of the plurality of time bins B1-B(N). In some embodiments, the adjusted frequency of a given one of the plurality of time bins B1-B(N) is set by a frequency adjustment amount (f) relative to a target frequency (HF0) of the high-frequency signal generated by the high-frequency RF signal generator 202. adj In some embodiments, the integer multiple is one of −4, −3, −2, −1, 0, +1, +2, +3, and +4, and the frequency adjustment amount (f adj ) is a target frequency of the low frequency signal generated by the low frequency RF signal generator 201. In some embodiments, the method includes identifying a change in the impedance of the plasma by detecting the occurrence of a rapid and sustained change in the reflected RF voltage at the output 271 of the high frequency RF signal generator 202 at time bin B1 corresponding to a positive-going zero voltage crossing of a complete cycle of the low frequency signal generated by the low frequency RF signal generator 201.

[0072] It should be understood that the embodiments described herein may employ various computer-implemented operations involving data stored in computer systems. These operations require physical manipulation of physical quantities. Any of the operations described herein that form part of the embodiments are useful machine operations. The embodiments also relate to hardware units or apparatus for performing these operations. An apparatus may be specially constructed for a special-purpose computer. When defined as a special-purpose computer, the computer is operable for its dedicated purpose, but may also perform other processes, program execution, or routines that are not part of its dedicated purpose. In some embodiments, operations may be processed by a general-purpose computer selectively activated or configured by one or more computer programs stored in computer memory, cache, or obtained over a network. When data is obtained over a network, the data may be processed by other computers on the network (e.g., a cloud of computing resources).

[0073] Various embodiments described herein can be implemented as computer-readable code on a non-transitory computer-readable medium. A non-transitory computer-readable medium is any data storage hardware unit that can store data, which can then be read by a computer system. Examples of non-transitory computer-readable media include hard drives, network-attached storage (NAS), ROM, RAM, compact disc ROM (CD-ROM), CD-recordable (CD-R), CD-rewritable (CD-RW), magnetic tape, and other optical and non-optical data storage hardware units. A non-transitory computer-readable medium can include computer-readable tangible media distributed over network-coupled computer systems so that the computer-readable code is stored and executed in a distributed manner.

[0074] Although the foregoing disclosure includes some details for clarity of understanding, it will be apparent that certain changes and modifications can be practiced within the scope of the appended claims. For example, it should be understood that one or more features from any embodiment disclosed herein can be combined with one or more features of any other embodiment disclosed herein. Therefore, the present embodiments should be considered illustrative rather than limiting, and the claims should not be limited to the details set forth herein, but may be modified within the scope and equivalents of the described embodiments.

[0075] The claims are as follows:

Claims

1. 1. A radio frequency signal generator system for a plasma processing system, comprising: a first radio frequency signal generator configured to generate a low frequency signal at an output of the first radio frequency signal generator; a second radio frequency signal generator configured to generate a high frequency signal at an output of the second radio frequency signal generator; an impedance matching system having a first input connected to the output of the first radio frequency signal generator and a second input connected to the output of the second radio frequency signal generator, the impedance matching system having an output connected to a radio frequency supply input of the plasma processing system, the impedance matching system being configured to control impedance at the output of the first radio frequency signal generator and the output of the second radio frequency signal generator; A control module comprising: monitoring a reflected voltage at the output of the second radio frequency signal generator; and a control module programmed to determine when the reflected voltage at the output of the second radio frequency signal generator indicates a change in impedance along a transmission path of the high frequency signal, the change indicating a corresponding process condition and / or event within the plasma processing system.

2. 2. The radio frequency signal generator system of claim 1, The control module is programmed to correlate rapid and sustained changes in the reflected voltage at the output of the second radio frequency signal generator to changes in impedance of a plasma generated by the low frequency signal and the high frequency signal.

3. 3. A radio frequency signal generator system according to claim 2, comprising: The radio frequency signal generator system, wherein the control module is programmed to signal an endpoint of the plasma process upon correlation of the rapid and sustained change in the reflected voltage at the output of the second radio frequency signal generator with a change in the impedance of the plasma.

4. 4. A radio frequency signal generator system according to claim 3, comprising: The radio frequency signal generator system, wherein the plasma process is an etching process.

5. 3. A radio frequency signal generator system according to claim 2, comprising: The radio frequency signal generator system, wherein the control module is programmed to signal a transition in a plasma process upon correlation of the rapid and sustained change in the reflected voltage at the output of the second radio frequency signal generator with a change in the impedance of the plasma.

6. 6. A radio frequency signal generator system according to claim 5, comprising: The radio frequency signal generator system, wherein the transition in the plasma process is exposure of a material on a substrate to the plasma.

7. 2. The radio frequency signal generator system of claim 1, the control module is programmed to determine a correlation between a rapid, temporary change in the reflected voltage at the output of the second radio frequency signal generator and an arcing event, and the control module is programmed to signal detection of the arcing event based on the correlation.

8. 2. The radio frequency signal generator system of claim 1, The control module is programmed to determine a correlation between a slow, sustained change in the reflected voltage at the output of the second radio frequency signal generator and a change in a condition of the plasma processing system, and the control module is programmed to signal detection of the change in the condition of the plasma processing system based on the correlation.

9. 9. A radio frequency signal generator system according to claim 8, comprising: The radio frequency signal generator system, wherein the change in the condition of the plasma processing system is a buildup of by-product material on one or more surfaces within the plasma processing system.

10. 2. The radio frequency signal generator system of claim 1, the control module is programmed to correlate a rapid and sustained change in the reflected voltage at the output of the second radio frequency signal generator to an endpoint of a waferless automatic cleaning process performed on the plasma processing system.

11. 2. The radio frequency signal generator system of claim 1, the control module is programmed to compare the reflected voltage at the output of the second radio frequency signal generator with one or more of a plurality of stored reflected voltage signatures associated with a plurality of conditions and / or events, respectively, to determine whether a corresponding condition / event has occurred, and the control module is programmed to signal the occurrence of the corresponding condition / event.

12. 2. The radio frequency signal generator system of claim 1, the control module is programmed to direct operation of the first radio frequency signal generator and the second radio frequency signal generator according to a frequency adjustment process that automatically adjusts the operating frequency of the first radio frequency signal generator about a target frequency of the low frequency signal to minimize reflected voltage at the output of the first radio frequency signal generator; the frequency adjustment process automatically adjusts the operating frequency of the second radio frequency signal generator about a target frequency of the high frequency signal to minimize the reflected voltage at the output of the second radio frequency signal generator, the operating frequency of the second radio frequency signal generator being separately adjusted with respect to the target frequency of the high frequency signal in each of a plurality of time bins that collectively span a complete cycle of the low frequency signal generated by the first radio frequency signal generator, the plurality of time bins and corresponding separate operating frequency adjustments being repeated in sequence over each cycle of the low frequency signal generated by the first radio frequency signal generator. Radio frequency signal generator system.

13. 13. A radio frequency signal generator system according to claim 12, comprising: a first time bin of the plurality of time bins starting at a positive-going zero voltage crossing of the complete cycle of the low frequency signal and a last time bin of the plurality of time bins ending at the positive-going zero voltage crossing of the complete cycle of the low frequency signal.

14. 13. A radio frequency signal generator system according to claim 12, comprising: a radio frequency signal generator system, wherein the operating frequency of the second radio frequency signal generator is set to an adjusted frequency in each of the plurality of time bins, and the adjusted frequency in any given one of the plurality of time bins is set independently and separately with respect to others of the plurality of time bins.

15. 15. The radio frequency signal generator system of claim 14, 10. A radio frequency signal generator system, wherein the adjusted frequency for a given one of the plurality of time bins is an integer multiple of a frequency adjustment amount relative to the target frequency of the radio frequency signal.

16. 16. A radio frequency signal generator system according to claim 15, comprising: a frequency adjustment amount that is a target frequency of the low-frequency signal generated by the first radio frequency signal generator;

17. 17. The radio frequency signal generator system of claim 16, The control module is programmed to correlate a rapid and sustained change in the reflected voltage at the output of the second radio frequency signal generator, which occurs at a positive-going zero voltage crossing of the complete cycle of the low frequency signal, to a change in impedance of a plasma generated by the low frequency signal and the high frequency signal.

Images