Electrostatic chuck

Abstract

To provide an electrostatic chuck capable of preventing discharge at a power supply terminal.SOLUTION: An electrostatic chuck 10 includes a dielectric substrate 100 having a first portion 101 including a mounting surface and a second portion 102 protruding further outward from the outer peripheral end of the first portion 101, an internal electrode 140 provided inside the second portion 102, a power supply terminal 160 provided in a position that does not overlap with the internal electrode 140 when viewed from above, and a bypass portion 150 provided inside the dielectric substrate 100 and electrically connecting the power supply terminal 160 and the internal electrode 140.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to an electrostatic chuck. [Background technology]

[0002] For example, semiconductor manufacturing equipment such as an etching apparatus is provided with an electrostatic chuck as a device for attracting and holding a substrate, such as a silicon wafer, to be processed. The electrostatic chuck includes a dielectric substrate provided with an attracting electrode and a base plate supporting the dielectric substrate, which are joined together. When a voltage is applied to the attracting electrode, an electrostatic force is generated, attracting and holding a substrate placed on the dielectric substrate.

[0003] During substrate processing, an annular member called a focus ring or the like is arranged around the substrate. As described in Patent Document 1 below, a dielectric substrate may be provided with a flange portion on which such an annular member is placed. The portion of the dielectric substrate on which a substrate to be processed, such as a silicon wafer, is placed is hereinafter also referred to as the first portion. The flange portion provided on the dielectric substrate is hereinafter also referred to as the second portion. The second portion (flange portion) protrudes further outward from the outer circumferential edge of the first portion and is thinner than the first portion. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2023-177720 Summary of the Invention [Problem to be solved by the invention]

[0005] As described in Patent Document 1, an internal electrode is provided inside the second portion (flange portion). The internal electrode may be provided, for example, as an "attraction electrode" for generating an attraction force between the annular member and the internal electrode, or as an "RF electrode" for generating plasma and attracting it toward the substrate. A power supply terminal for supplying power to this internal electrode has conventionally been provided in a position on the second portion that overlaps with the internal electrode in a top view. When the power supply terminal is located in such a position, it is thought that discharge is more likely to occur, for example, because the air pressure around the power supply terminal becomes lower than atmospheric pressure.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide an electrostatic chuck that can prevent discharge at the power supply terminal. [Means for solving the problem]

[0007] In order to solve the above problems, the electrostatic chuck according to the present invention includes a dielectric substrate having a first portion including a mounting surface on which an object to be attracted is placed, and a second portion that protrudes further outward from the outer circumferential edge of the first portion and is thinner than the first portion; an internal electrode provided inside the second portion; a power supply terminal provided at a position that does not overlap with the internal electrode when viewed in a direction perpendicular to the mounting surface; and a bypass portion provided inside the dielectric substrate and electrically connecting the power supply terminal and the internal electrode.

[0008] The position overlapping with the internal electrode in top view is a position near the outer peripheral end of the dielectric substrate, where discharge is relatively likely to occur due to the low ambient air pressure. Therefore, in the electrostatic chuck having the above configuration, the bypass portion is provided to increase the degree of freedom in arranging the power supply terminal, and the power supply terminal is arranged in a position where it does not overlap with the internal electrode in top view. By arranging the power supply terminal so as to avoid the position where discharge is likely to occur, discharge at the power supply terminal can be prevented. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide an electrostatic chuck that can prevent discharge at the power supply terminal. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a cross-sectional view schematically showing the configuration of an electrostatic chuck according to a first embodiment. [Figure 2] 2 is an enlarged view showing in detail a portion of the configuration of the electrostatic chuck according to the first embodiment. FIG. [Figure 3] FIG. 2 is a diagram schematically illustrating the configuration of internal electrodes, bypass portions, etc., as viewed from above. [Figure 4] FIG. 10 is an enlarged view showing in detail a portion of the configuration of the electrostatic chuck according to the second embodiment. [Figure 5] FIG. 2 is a diagram schematically illustrating the configuration of internal electrodes, bypass portions, etc., as viewed from above. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, the present embodiment will be described with reference to the accompanying drawings. To facilitate understanding of the description, the same components in the drawings will be denoted by the same reference numerals as much as possible, and duplicated descriptions will be omitted.

[0012] A first embodiment will be described. An electrostatic chuck 10 according to this embodiment is configured to electrostatically attract and hold a substrate W to be processed inside a semiconductor manufacturing apparatus (not shown), such as an etching apparatus. The object to be attracted, that is, the substrate W, is, for example, a silicon wafer. The electrostatic chuck 10 may also be used in apparatuses other than semiconductor manufacturing apparatuses.

[0013] 1 is a schematic cross-sectional view showing the configuration of an electrostatic chuck 10 in a state where the electrostatic chuck 10 attracts and holds a substrate W. The electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200.

[0014] The dielectric substrate 100 is a substantially disk-shaped member made of a sintered ceramic body. The dielectric substrate 100 contains, for example, high-purity aluminum oxide (Al2O3), but may also contain other materials. The purity, type, and additives of the ceramics in the dielectric substrate 100 can be appropriately set in consideration of the plasma resistance and other properties required of the dielectric substrate 100 in semiconductor manufacturing equipment.

[0015] 1 of the dielectric substrate 100 is a "mounting surface" on which the substrate W is placed. Also, a lower surface 120 of the dielectric substrate 100 in FIG. 1 is a "bonded surface" that is bonded to the base plate 200 via a bonding layer 300. The viewpoint when the electrostatic chuck 10 is viewed from the side of the surface 110 along a direction perpendicular to the surface 110 will hereinafter also be referred to as a "top view."

[0016] The dielectric substrate 100 has a first portion 101 and a second portion 102. The first portion 101 is a generally cylindrical portion that extends from a surface 110 downward in Fig. 1 to a surface 120. Such a first portion 101 can be said to be a portion of the dielectric substrate 100 that includes the surface 110, which is the mounting surface.

[0017] The second portion 102 is an annular portion that protrudes further outward from the outer peripheral edge of the first portion 101, and is also referred to as the "flange" of the dielectric substrate 100. In FIG. 1, the boundary between the first portion 101 and the second portion 102 is indicated by a dotted line DL. The second portion 102 is thinner than the first portion 101. The surface 120 mentioned above is the lowermost surface of the first portion 101 in FIG. 1, and is also the lowermost surface of the second portion 102. The uppermost surface 143 of the second portion 102 is located lower than the surface 110 in FIG. 1.

[0018] 2, when a substrate W is processed in a semiconductor manufacturing apparatus, an annular member RE, such as a focus ring, is disposed around the substrate W. A surface 143 of the second portion 102 supports the annular member RE from below. The surface 143 is parallel to the surface 110.

[0019] An attraction electrode 130 is provided inside the first portion 101 of the dielectric substrate 100. The attraction electrode 130 is a thin, flat layer made of a metal material such as tungsten, and is disposed parallel to the surface 110. The attraction electrode 130 may be made of molybdenum, platinum, palladium, or the like, in addition to tungsten. When a voltage is applied to the attraction electrode 130 from the outside via a power supply path (not shown), an electrostatic force is generated between the surface 110 and the substrate W, thereby attracting and holding the substrate W. The power supply path may be configured in any of various well-known ways. The attraction electrode 130 may be provided as a single so-called "monopolar" electrode as in this embodiment, or as two so-called "bipolar" electrodes.

[0020] An internal electrode 140 is provided inside the second portion 102 of the dielectric substrate 100. The internal electrode 140 is a thin, flat layer made of the same material as the chucking electrode 130 and is disposed parallel to the surface 143. When a voltage is applied to the internal electrode 140 from the outside via a power supply line (not shown in FIG. 1 ), an electrostatic force is generated between the surface 143 and the annular member RE, thereby attracting and holding the annular member RE. The internal electrode 140 includes a first internal electrode 141 and a second internal electrode 142, and is provided as a so-called "bipolar" electrode. Alternatively, the internal electrode 140 may be configured as a "unipolar" electrode. The specific configurations of the internal electrode 140 and the power supply line connected thereto will be described later.

[0021] As shown in Fig. 1, a space SP1 is formed between the dielectric substrate 100 and the substrate W. When a process such as etching is performed in the semiconductor manufacturing equipment, helium gas for temperature adjustment is supplied to the space SP1 from the outside through a gas hole (not shown). By providing helium gas between the dielectric substrate 100 and the substrate W, the thermal resistance between them is adjusted, thereby maintaining the temperature of the substrate W at an appropriate temperature. Note that the temperature adjustment gas supplied to the space SP1 may be a type of gas other than helium.

[0022] A seal ring 111 and dots 112 are provided on a surface 110 that is a mounting surface, and the space SP1 is formed around these.

[0023] The seal ring 111 is a wall that divides the space SP1 at the outermost position. The upper end of the seal ring 111 forms part of the surface 110 and abuts against the substrate W. Note that multiple seal rings 111 may be provided to divide the space SP1. With this configuration, it is possible to individually adjust the pressure of the helium gas in each space SP1 and make the surface temperature distribution of the substrate W during processing more uniform.

[0024] 1, the portion marked with the reference numeral "116" is the bottom surface of the space SP1. Hereinafter, this portion will also be referred to as the "bottom surface 116." The seal ring 111, together with the dots 112 described below, is formed by digging down a portion of the surface 110 to the position of the bottom surface 116.

[0025] The dots 112 are circular protrusions that protrude from the bottom surface 116. A plurality of dots 112 are provided, and are distributed approximately evenly on the mounting surface of the dielectric substrate 100. The upper end of each dot 112 forms part of the surface 110 and comes into contact with the substrate W. By providing a plurality of such dots 112, bending of the substrate W is suppressed.

[0026] The base plate 200 is a substantially disk-shaped member that supports the dielectric substrate 100. The base plate 200 is formed of a metal material such as aluminum. The upper surface 210 of the base plate 200 in FIG. 1 is a "bonded surface" that is bonded to the dielectric substrate 100 via a bonding layer 300. The outer shape of the surface 210 in a top view is generally the same as the outer shape of the second portion 102 in a top view.

[0027] The bonding layer 300 is a layer provided between the dielectric substrate 100 and the base plate 200, and bonds them together. The bonding layer 300 is formed by curing an adhesive made of an insulating material. In this embodiment, a silicone adhesive is used as the adhesive. However, the bonding layer 300 may be formed by curing another type of adhesive. In either case, it is preferable to use a material with as high a thermal conductivity as possible as the material for the bonding layer 300 so as to reduce the thermal resistance between the dielectric substrate 100 and the base plate 200.

[0028] An insulating film may be formed on the surface of the base plate 200. For example, an alumina film formed by thermal spraying can be used as the insulating film. By covering the surface of the base plate 200 with an insulating film, the dielectric strength of the base plate 200 can be increased.

[0029] A coolant flow path 250 for passing a coolant is formed inside the base plate 200. When a process such as etching is performed in the semiconductor manufacturing equipment, a coolant is supplied to the coolant flow path 250 from the outside, thereby cooling the base plate 200. Heat generated in the substrate W during the process is transferred to the coolant via the helium gas in the space SP1, the dielectric substrate 100, and the base plate 200, and is then discharged to the outside together with the coolant. The coolant is supplied to and discharged from the coolant flow path 250 through an opening (not shown) formed on a surface 220 of the base plate 200 opposite the surface 210. The coolant flow path 250 is formed to pass not only through the area overlapping with the first portion 101 in top view, but also through the area overlapping with the second portion 102. Therefore, not only the substrate W but also the annular member RE are cooled by the coolant passing through the coolant flow path 250.

[0030] The specific configuration of the internal electrodes 140 and the power supply paths connected thereto will be described with reference to Figures 2 and 3. Figure 2 shows a schematic cross-sectional view of the second portion 102 of the dielectric substrate 100 and the configuration of the surrounding area. Figure 3 shows a schematic top view of the configuration of the internal electrodes 140, etc.

[0031] As described above, the internal electrode 140 of this embodiment is configured as a "bipolar" electrode and includes a first internal electrode 141 and a second internal electrode 142. As shown in FIG. 3, these are formed to extend in concentric circular ring shapes when viewed from above. The first internal electrode 141 is disposed on the outer periphery, and the second internal electrode 142 is disposed on the inner periphery. The first internal electrode 141 and the second internal electrode 142 are provided at the same height position. The "height position" refers to a position along a direction perpendicular to the surface 110, which is the mounting surface.

[0032] A power supply terminal 160 is embedded in the surface 120 of the dielectric substrate 100. The power supply terminal 160 is a metal component for receiving power supplied from outside to the internal electrode 140. The power supply terminal 160 is provided individually corresponding to each of the first internal electrode 141 and the second internal electrode 142. The power supply terminal 160 provided corresponding to the first internal electrode 141 will also be referred to as the "first power supply terminal 161" below. Furthermore, the power supply terminal 160 provided corresponding to the second internal electrode 142 will also be referred to as the "second power supply terminal 162" below.

[0033] In this embodiment, one first power supply terminal 161 is provided corresponding to the first internal electrode 141, but a plurality of first power supply terminals 161 may be provided. Similarly, one second power supply terminal 162 is provided corresponding to the second internal electrode 142, but a plurality of second power supply terminals 162 may be provided.

[0034] A through hole 261 is formed in the base plate 200 at a portion that overlaps with the first power supply terminal 161 in a top view. A bus bar 11 is inserted into the through hole 261 from below, and one end of the bus bar 11 is connected to the first power supply terminal 161. External power is supplied to the first power supply terminal 161 via the bus bar 11.

[0035] Similarly, a through hole 262 is formed in the base plate 200 at a portion that overlaps with the second power supply terminal 162 in a top view. The bus bar 12 is inserted into the through hole 262 from below, and one end of the bus bar 12 is connected to the second power supply terminal 162. External power is supplied to the second power supply terminal 162 via the bus bar 12.

[0036] In this embodiment, the first internal electrode 141 and the second internal electrode 142 are provided in the second portion 102, while the first power supply terminal 161 and the second power supply terminal 162 are provided in the first portion 101. Therefore, the power supply terminal 160 is provided at a position that does not overlap with the internal electrode 140 in a top view.

[0037] To electrically connect such a power supply terminal 160 and the internal electrode 140, a bypass section 150 is provided inside the dielectric substrate 100. The bypass section 150 includes a first bypass section 151 and a second bypass section 152. Both of these are thin, flat layers made of the same material as the chucking electrode 130 and the internal electrode 140, and are arranged parallel to the surface 110.

[0038] The first bypass portion 151 electrically connects the first power supply terminal 161 and the first internal electrode 141. The first bypass portion 151 is located closer to the first power supply terminal 161 than the first internal electrode 141 in a direction perpendicular to the mounting surface, that is, located lower than the first internal electrode 141 and the second internal electrode 142 in Fig. 2. As shown in Fig. 3, the first bypass portion 151 is formed so as to extend from a position overlapping with the first internal electrode 141 to a position overlapping with the first power supply terminal 161 in top view.

[0039] The first internal electrode 141 and the first bypass portion 151 are electrically connected by a via 171. The via 171 is a through hole formed so as to extend from the first internal electrode 141 to the first bypass portion 151, and is filled with a conductive material such as tungsten.

[0040] In this embodiment, a bottomed hole is formed on the surface 120 of the dielectric substrate 100, and the first power supply terminal 161 is embedded in the hole with the first bypass portion 151 exposed at the bottom of the hole. With this configuration, the first power supply terminal 161 and the first bypass portion 151 are directly connected to each other. Instead of this configuration, the first power supply terminal 161 and the first bypass portion 151 may be electrically connected to each other via a via similar to the via 171, for example.

[0041] The second bypass portion 152 electrically connects the second power supply terminal 162 and the second internal electrode 142. The second bypass portion 152 is formed at the same height as the second internal electrode 142. The second bypass portion 152 is formed so as to extend linearly from the inner circumferential side of the second internal electrode 142 to a position overlapping with the second power supply terminal 162 in a top view. The second bypass portion 152 is formed simultaneously with the second internal electrode 142 by, for example, screen printing when the second internal electrode 142 is formed. For convenience of illustration, in FIG. 2, the second bypass portion 152 is depicted as being thinner than the second internal electrode 142, but in reality, they have the same thickness.

[0042] In this embodiment, a bottomed hole is formed in the surface 120 of the dielectric substrate 100, and the second power supply terminal 162 is embedded in the hole with the second bypass portion 152 exposed at the bottom of the hole. With this configuration, the second power supply terminal 162 and the second bypass portion 152 are directly connected to each other. The dimension of the second power supply terminal 162 in the up-down direction in FIG. 2 is larger than the dimension of the first power supply terminal 161 in the same direction. Instead of this configuration, the second power supply terminal 162 and the second bypass portion 152 may be electrically connected to each other via, for example, a via similar to the via 171.

[0043] As described above, in the electrostatic chuck 10 according to this embodiment, the power supply terminal 160 is provided at a position that does not overlap with the internal electrode 140 when viewed from above, and the power supply terminal 160 and the internal electrode 140 are electrically connected via the bypass portion 150.

[0044] The reason for adopting such a configuration will be explained below. In addition to the electrostatic chuck 10, a support base 400 provided in the semiconductor manufacturing apparatus is also shown in Fig. 2. The support base 400 is a member for supporting the electrostatic chuck 10 from below. The electrostatic chuck 10 is fastened and fixed to the support base 400 by, for example, bolts (not shown).

[0045] The support base 400 includes a cylindrical portion 410 and a flange portion 420. The cylindrical portion 410 is a portion having a substantially cylindrical shape, and its central axis coincides with the central axis of the electrostatic chuck 10. The inner diameter of the cylindrical portion 410 is approximately the same as or slightly larger than the diameter of the surface 110, and is smaller than the outer diameter of the second portion 102 and the base plate 200.

[0046] The flange portion 420 is a circular flange formed so as to protrude toward the outer periphery from the end of the cylindrical portion 410 on the electrostatic chuck 10 side. The outer diameter of the flange portion 420 is approximately equal to the outer diameters of the second portion 102 and the base plate 200. The flange portion 420 is fastened and fixed to the base plate 200 in a state in which it abuts against the surface 220 of the base plate 200 from below.

[0047] An O-ring (not shown) is sandwiched between the flange portion 420 and the base plate 200. This maintains the airtightness of the space SP2 inside the cylindrical portion 410. During processing of the substrate W, the pressure in the space SP3 around the electrostatic chuck 10 is reduced, while the pressure inside the space SP2 is maintained at atmospheric pressure.

[0048] If the power supply terminal 160 were provided in a position overlapping the internal electrode 140 in a top view, the power supply terminal 160 and the electric path connected to it would be exposed to the space SP3. The space SP3 is depressurized as described above, and according to Paschen's law, it is a pressure region in which discharge is relatively likely to occur. For this reason, it is thought that discharge is likely to occur when power is supplied to the internal electrode 140 via the power supply terminal 160 or the like.

[0049] Therefore, in the electrostatic chuck 10 according to this embodiment, the bypass portion 150 is provided to increase the degree of freedom in arranging the power supply terminal 160, and the power supply terminal 160 is arranged at a position where it does not overlap with the internal electrode 140 in a top view. Specifically, by providing the power supply terminal 160 in the first portion 101 and arranging it in the space SP2, which is at atmospheric pressure, it is possible to prevent discharge from occurring in the power supply terminal 160, the bus bars 11, 12, and the like.

[0050] In this embodiment, the entire power supply terminal 160 is provided in the first portion 101, but only a portion of the power supply terminal 160 may be provided in the first portion 101. For example, a portion of the first power supply terminal 161 may be provided in the first portion 101, and the remaining portion of the first power supply terminal 161 may be provided in the second portion 102. In either case, it is preferable that the entire first power supply terminal 161 and the second power supply terminal 162 are disposed in the space SP2, which is at atmospheric pressure.

[0051] In this embodiment, the first bypass portion 151 connected to the first internal electrode 141 on the outer periphery side is located at a different height position from the first internal electrode 141. Specifically, the first bypass portion 151 is located at a lower position than the first internal electrode 141 in FIG. 2. By providing the first bypass portion 151 at such a height position, the first bypass portion 151 can be freely routed further to the first power supply terminal 161 on the inner periphery side without interfering with the second internal electrode 142 on the inner periphery side. Note that the first bypass portion 151 may also be located at a higher position than the first internal electrode 141 in FIG. 2.

[0052] In this embodiment, the first bypass portion 151 and the second bypass portion 152 are located at different heights. Specifically, the first bypass portion 151 is located below the first internal electrode 141 as described above, while the second bypass portion 152 is located at the same height as the first internal electrode 141 and the second internal electrode 142. Since the second internal electrode 142 and the second bypass portion 152 can be formed simultaneously, manufacturing costs can be reduced. In addition, since there is no need to interpose a via with low resistance between the second internal electrode 142 and the second bypass portion 152, there is also the advantage that heat generation at the connection portion between the two is suppressed.

[0053] The above configuration can also be adopted when the internal electrode 140 is provided as a unipolar electrode rather than a bipolar electrode. That is, the bypass section 150 extending from the internal electrode 140 may be provided at the same height as the unipolar internal electrode 140. In this case, too, the power supply terminal 160 connected to the bypass section 150 is preferably provided at a position that does not overlap with the internal electrode 140 in a top view, and more preferably is provided in the first portion 101.

[0054] The internal electrode 140 may be provided as an adsorption electrode for adsorbing and holding the annular member RE, as in this embodiment, or may be provided as an "RF electrode" for generating plasma and attracting it toward the substrate W.

[0055] The second embodiment will be described with reference to FIGS. 4 and 5. The following mainly describes differences from the first embodiment, and descriptions of commonalities with the first embodiment will be omitted where appropriate. In FIG. 4, the configuration of an electrostatic chuck 10 according to this embodiment is depicted from the same perspective as in FIG. 2. In FIG. 5, the configuration of an electrostatic chuck 10 according to this embodiment is depicted from the same perspective as in FIG. 3.

[0056] The electrostatic chuck 10 according to this embodiment differs from the first embodiment in the height position of the second bypass portion 152. The second bypass portion 152 of this embodiment is located at the same height position as the first bypass portion 151. The second internal electrode 142 and the second bypass portion 152 are electrically connected by a via 172. The via 172 is a through hole formed to extend from the second internal electrode 142 to the second bypass portion 152, and is filled with a conductive material such as tungsten.

[0057] In this embodiment, the first bypass portion 151 and the second bypass portion 152 are located at the same height, and therefore the dimension of the second power feed terminal 162 in the up-down direction in FIG. 4 is the same as the dimension of the first power feed terminal 161 in the same direction. As a result, it is possible to use a component having the same shape as the first power feed terminal 161 as the second power feed terminal 162. By sharing some of the components in this way, the manufacturing cost of the electrostatic chuck 10 can be reduced.

[0058] The present embodiment has been described above with reference to specific examples. However, the present disclosure is not limited to these specific examples. Design modifications to these specific examples made by a person skilled in the art as appropriate are also included within the scope of the present disclosure as long as they comprise the features of the present disclosure. The elements of the above-described specific examples, as well as their arrangement, conditions, shape, etc., are not limited to those exemplified and can be modified as appropriate. The elements of the above-described specific examples can be combined in various ways as appropriate, as long as no technical contradictions arise. [Explanation of symbols]

[0059] 10: Electrostatic chuck 100: Dielectric substrate 101: Part 1 102:Second part 110: Face 140: Internal electrode 141:First internal electrode 142:Second internal electrode 150: Bypass section 151: First bypass section 152: Second bypass section 160: Power supply terminal 161: First power supply terminal 162: Second power supply terminal W: Substrate

Claims

1. a dielectric substrate having a first portion including a mounting surface on which an object to be attracted is placed, and a second portion protruding further outward from an outer circumferential edge of the first portion and being thinner than the first portion; an internal electrode provided inside the second portion; a power supply terminal provided at a position that does not overlap with the internal electrode when viewed from a direction perpendicular to the mounting surface; a bypass portion provided inside the dielectric substrate and electrically connecting the power supply terminal and the internal electrode.

2. 2. The electrostatic chuck according to claim 1, wherein the power supply terminal is provided on the first portion.

3. 3. The electrostatic chuck according to claim 2, wherein the bypass portion is located at the same height as the internal electrode.

4. the internal electrodes include a first internal electrode and a second internal electrode provided at the same height position; the power supply terminals include a first power supply terminal and a second power supply terminal; The bypass section a first bypass portion electrically connecting the first power supply terminal and the first internal electrode; 2. The electrostatic chuck according to claim 1, further comprising: a second bypass portion electrically connecting the second power supply terminal and the second internal electrode.

5. the first internal electrode is located at a position closer to the outer periphery than the second internal electrode, 5. The electrostatic chuck according to claim 4, wherein the first bypass portion is located at a different height from the first internal electrode.

6. In a direction perpendicular to the mounting surface, 6. The electrostatic chuck according to claim 5, wherein the first bypass portion is located closer to the first power supply terminal than the first internal electrode.

7. 6. The electrostatic chuck according to claim 5, wherein the second bypass portion is located at a different height from the first bypass portion.

8. 8. The electrostatic chuck according to claim 7, wherein the second bypass portion is located at the same height as the second internal electrode.

9. 6. The electrostatic chuck according to claim 5, wherein the second bypass portion is located at the same height as the first bypass portion.

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