Light-emitting device

Abstract

To provide a light-emitting device that can achieve both improved light extraction efficiency and improved bonding strength between a dielectric film and a light-transmitting member.SOLUTION: A light-emitting device includes a semiconductor portion including a light-emitting layer, a dielectric film that is disposed on an upper surface of the semiconductor portion and that includes an oxide, and a light-transmitting member that is disposed on the upper surface of the dielectric film, and the refractive index of the dielectric film is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the light-transmitting member than the refractive index of the semiconductor portion, the oxide contains Al and Ta, and when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at%, the second amount is greater than 0 at% and not more than 60 at%.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a light emitting device. [Background technology]

[0002] Patent Document 1 discloses a light emitting device in which a light emitting portion is formed on the surface of a transparent substrate. In some light emitting devices, a dielectric film is disposed between the transparent substrate and the light emitting portion. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-174909 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a light emitting device that can achieve both improved light extraction efficiency and improved bonding strength between a dielectric film and a light-transmitting member. [Means for solving the problem]

[0005] According to one aspect of the disclosed technology, a light-emitting device includes a semiconductor portion including a light-emitting layer, a dielectric film including an oxide and disposed on an upper surface of the semiconductor portion, and a translucent member disposed on the upper surface of the dielectric film, wherein the refractive index of the dielectric film is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the translucent member than the refractive index of the semiconductor portion, the oxide includes Al and Ta, and when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at%, the second amount is greater than 0 at% and not more than 60 at%.

[0006] According to one aspect of the disclosed technique, a light emitting device includes a semiconductor section including a light emitting layer, a first light-transmissive member disposed on an upper surface of the semiconductor section, a dielectric film disposed on the upper surface of the first light-transmissive member and including an oxide, and a second light-transmissive member disposed on the upper surface of the dielectric film, wherein the refractive index of the dielectric film is smaller than the refractive index of the semiconductor section and closer to the refractive index of the second light-transmissive member than the refractive index of the semiconductor section, the refractive index of the first light-transmissive member is smaller than the refractive index of the semiconductor section and closer to the refractive index of the dielectric film than the refractive index of the semiconductor section, the oxide includes Al and Ta, and when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at%, the second amount is greater than 0 at% and not more than 60 at%. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to achieve both an improvement in light extraction efficiency and an improvement in the bonding strength between the dielectric film and the light-transmitting member. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view illustrating a light emitting device according to a first embodiment. [Figure 2] FIG. 1 is a diagram showing the relationship between the composition of a dielectric film and the surface energy and refractive index. [Figure 3] FIG. 1 is a diagram showing the relationship between the composition of a dielectric film and the light transmittance. [Figure 4] FIG. 1 is a diagram showing the relationship between the composition of a dielectric film and the light transmittance. [Figure 5] FIG. 10 is a graph showing the relationship between the amount of Ta contained in the oxide and the light extraction efficiency. [Figure 6] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 7] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 8] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 9]3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 10] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 11] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 12] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 13] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 14] 3A to 3C are plan views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 15] FIG. 10 is a cross-sectional view illustrating a light emitting device according to a second embodiment. [Figure 16] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 17] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 18] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 19] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 20] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 21] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. The following description is intended to embody the technical idea of ​​the present disclosure, and unless otherwise specified, the present disclosure is not limited to the following description.

[0010] In each drawing, components having the same function may be assigned the same reference numerals. For convenience, the embodiments may be shown separately to facilitate explanation or understanding of the main points, but partial substitution or combination of configurations shown in different embodiments or examples is possible. In the embodiments shown later, differences from the previously shown embodiments will be mainly described, and redundant explanations of commonalities with the previously shown embodiments may be omitted. The size and positional relationship of components shown in each drawing may be exaggerated for clarity. To avoid overly complicated drawings, some elements may be omitted, or end views showing only the cut surface may be used as cross-sectional views.

[0011] (First embodiment) The first embodiment relates to a light emitting device. Fig. 1 is a cross-sectional view illustrating the light emitting device according to the first embodiment.

[0012] The light emitting device 1 according to the first embodiment has a semiconductor portion 10, a dielectric film 22, and a light-transmitting member 23. In the following description, the length in the direction perpendicular to the top surface 10c of the semiconductor portion 10 and toward the dielectric film 22 may be referred to as the height or thickness.

[0013] The semiconductor section 10 includes a first semiconductor layer 10n, a light emitting layer 10a, and a second semiconductor layer 10p, which are stacked one on top of the other. The light emitting layer 10a is located between the first semiconductor layer 10n and the second semiconductor layer 10p. In this embodiment, the first semiconductor layer 10n includes an n-type semiconductor, and the second semiconductor layer 10p includes a p-type semiconductor. The light emitting layer 10a includes multiple barrier layers and multiple well layers, and can have a multiple quantum well structure in which the barrier layers and well layers are alternately stacked. For example, the semiconductor section 10 is rectangular in plan view. When the semiconductor section 10 is rectangular in plan view, the length of one side is, for example, 50 μm or more and 2000 μm or less.

[0014] The semiconductor portion 10 is made of a nitride semiconductor layer. x Al y Ga 1-x-yThis includes semiconductors of all compositions in which the composition ratios x and y in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges.

[0015] The semiconductor portion 10 has a recess R. For example, the recess R is located near the center of the semiconductor portion 10 in a plan view. The recess R is defined by the side surfaces of the first semiconductor layer 10n, the light emitting layer 10a, the second semiconductor layer 10p, and the top surface of the first semiconductor layer 10n. Of the surfaces defining the recess R, the side surfaces of the first semiconductor layer 10n, the light emitting layer 10a, and the second semiconductor layer 10p are inclined surfaces inclined with respect to the top surface 10c. The top surface 10c is roughened. The arithmetic mean roughness Ra of the top surface 10c is, for example, 100 nm or more and 250 nm or less.

[0016] The first semiconductor layer 10n has an exposed portion S that is exposed from the second semiconductor layer 10p and the light emitting layer 10a. The height from the upper surface 10c to the exposed portion S is approximately the same as the height from the upper surface 10c to the surface of the first semiconductor layer 10n in the plane that defines the recess R. The exposed portion S is disposed around the second semiconductor layer 10p and the light emitting layer 10a.

[0017] The semiconductor portion 10 from the upper surface 10c to the exposed portion S is composed of a first semiconductor layer 10n. The side surface of the first semiconductor layer 10n is an inclined surface that is inclined with respect to the upper surface 10c. The semiconductor portion 10 is located below the first semiconductor layer 10n and has a stacked body including a light emitting layer 10a and a second semiconductor layer 10p. The side surface of this stacked body is an inclined surface that is inclined with respect to the upper surface 10c.

[0018] A p-side electrode 12 is disposed on the lower surface of the second semiconductor layer 10p. The p-side electrode 12 is electrically connected to the second semiconductor layer 10p. The p-side electrode 12 preferably has a reflectivity of 60% or more, preferably 70% or more, for light of the peak wavelength emitted by the light-emitting layer 10a. This allows the p-side electrode 12 to reflect light from the light-emitting layer 10a toward the second semiconductor layer 10p toward the first semiconductor layer 10n, thereby improving the light extraction efficiency. Metal materials such as Ag, Al, Rh, Ni, Ti, and Pt, or alloys containing these as main components, can be used for the p-side electrode 12. The p-side electrode 12 may have a single-layer structure made of one of these metal materials, or a multi-layer structure in which multiple layers are stacked. Alternatively, the p-side electrode 12 may be a transparent conductive film made of indium tin oxide (ITO), zinc oxide (ZnO), indium oxide (In2O3), or the like.

[0019] A first insulating film 15 is disposed on the second semiconductor layer 10p and the p-side electrode 12. The first insulating film 15 has an opening that exposes a part of the p-side electrode 12. For example, the first insulating film 15 is a silicon oxide film or a silicon nitride film.

[0020] A second insulating film 16 is disposed on the side surfaces of the second semiconductor layer 10p, the light emitting layer 10a, and the first insulating film 15. The second insulating film 16 is disposed on the exposed portion S and the side surfaces of the first semiconductor layer 10n. The second insulating film 16 has an opening that exposes a portion of the p-side electrode 12 and an opening that is located in the recess R and exposes a portion of the lower surface of the first semiconductor layer 10n. The second insulating film 16 is, for example, a silicon oxide film or a silicon nitride film.

[0021] The first conductive member 14 is disposed under the second insulating film 16. The first conductive member 14 is electrically connected to the first semiconductor layer 10n at an opening of the second insulating film 16 located in the recess R.

[0022] A second conductive member 13 is disposed under the second insulating film 16. The second conductive member 13 is electrically connected to the p-side electrode 12 exposed from the openings in the first insulating film 15 and the second insulating film 16. The second conductive member 13 is electrically connected to the second semiconductor layer 10p via the p-side electrode 12.

[0023] The first conductive member 14 and the second conductive member 13 can be made of metal materials such as Al, Rh, Ag, Ti, Pt, Au, Cu, Si, or other semiconductor materials, or alloys containing these as their main components. The first conductive member 14 and the second conductive member 13 can have a single-layer structure made of these metal materials, or a multi-layer structure made of multiple layers. The first conductive member 14 and the second conductive member 13 can be made of the same material and have the same structure, or can be made of different materials and have different structures.

[0024] The dielectric film 22 is disposed on the upper surface 10c of the semiconductor portion 10 and contains an oxide. The refractive index of the dielectric film 22 is smaller than that of the semiconductor portion 10 and closer to that of the light-transmitting member 23 than that of the semiconductor portion 10. That is, the refractive index of the dielectric film 22 is smaller than that of the semiconductor portion 10, and the absolute value of the difference between the refractive index of the dielectric film 22 and that of the light-transmitting member 23 is smaller than the absolute value of the difference between the refractive index of the dielectric film 22 and that of the semiconductor portion 10. For example, the refractive index of the semiconductor portion 10 is 2.0 or more and 3.0 or less, the refractive index of the light-transmitting member 23 is 1.7 or more and 1.9 or less, and the refractive index of the dielectric film 22 is 1.7 or more and 1.9 or less. Furthermore, for example, the absolute value of the difference between the refractive index of the dielectric film 22 and that of the light-transmitting member 23 is, for example, 0.3 or less, preferably 0.2 or less, and more preferably 0.1 or less. Note that the refractive index in this embodiment refers to the refractive index at the peak wavelength of light emitted by the light-emitting layer 10a of the semiconductor portion 10. The oxide contains Al and Ta, and when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at%, the second amount is greater than 0 at% and not more than 60 at%. The thickness of the dielectric film 22 is, for example, not less than 1 μm and not more than 50 μm.

[0025] The dielectric film 22 is preferably a dielectric film made of an inorganic material. The dielectric film 22 is translucent and transmits light emitted from the light-emitting layer 10a of the semiconductor section 10. The dielectric film 22 preferably has a transmittance of 60% or more, preferably 70% or more, for light of the peak wavelength emitted by the light-emitting layer 10a. The dielectric film 22 preferably includes a film having a refractive index between that of the semiconductor section 10 and that of the translucent member 23 described below. This configuration can achieve good light extraction efficiency. For example, the dielectric film 22 includes a film having a refractive index lower than that of the semiconductor section 10. For example, the refractive index of the dielectric film 22 is lower than that of the semiconductor section 10 and higher than that of the translucent member 23. When the semiconductor section 10 includes multiple semiconductor layers, the refractive index of the semiconductor section 10 is the refractive index of the semiconductor layer in contact with the dielectric film 22. In this embodiment, the refractive index of the dielectric film 22 is lower than that of the first semiconductor layer 10n.

[0026] The light-transmitting member 23 is disposed on the upper surface 22a of the dielectric film 22. The light-transmitting member 23 may be a sintered phosphor, or a resin (binder) such as epoxy resin or silicone resin containing a phosphor. A sintered phosphor refers to a member in which only a phosphor is sintered, or a member in which a phosphor is sintered together with ceramics such as aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, zirconium oxide, or titanium oxide, and does not contain resin. By using a sintered phosphor for the light-transmitting member 23, the heat dissipation of the phosphor is improved compared to a member in which a phosphor is contained in a resin (binder), and therefore the decrease in wavelength conversion efficiency can be reduced. The phosphor is an yttrium-aluminum-garnet phosphor (for example, Y3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu), α-sialon phosphors (e.g., Ca(Si,Al) 12 (O,N) 16:Eu), a nitride-based phosphor such as a CASN-based phosphor (e.g., CaAlSiN3:Eu) or a SCASN-based phosphor (e.g., (Sr,Ca)AlSiN3:Eu), a fluoride-based phosphor such as a KSF-based phosphor (e.g., K2SiF6:Mn), a KSAF-based phosphor (e.g., K2(Si,Al)F6:Mn) or a MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), a phosphor having a perovskite structure (e.g., CsPb(F,Cl,Br,I)3), or a quantum dot phosphor (e.g., CdSe, InP, AgInS2, or AgInSe2). For example, the refractive index of the dielectric film 22 may be higher than that of the light-transmitting member 23. The thickness of the light-transmitting member 23 is, for example, 100 μm or more and 400 μm or less, preferably 120 μm or more and 300 μm or less, and more preferably 130 μm or more and 260 μm or less. The light-transmitting member 23 may be a light-transmitting substrate such as a sapphire substrate.

[0027] Here, the investigations conducted by the inventors of the present invention regarding the composition of the dielectric film will be described.

[0028] The present inventors investigated the relationship between the composition of the dielectric film and the bonding strength between the dielectric film and the light-transmitting member. In this investigation, a 400 μm-thick plate-shaped sintered body of a yttrium-aluminum-garnet phosphor (hereinafter also referred to as a YAG plate) and an 850 μm-thick sapphire substrate were separately prepared as the light-transmitting member, and the dielectric film shown in Table 1 below was formed on the light-transmitting member by sputtering or chemical vapor deposition (CVD). The values ​​in parentheses in the material column in Table 1 (unit: at%) are values ​​converted to the proportion of metal elements.

[0029] [Table 1]

[0030] The samples were then heated to 300°C, simulating the reflow that occurs when the light-emitting device is mounted on a mounting board, and cooled to room temperature. The dielectric film was then peeled off from the light-transmitting member, and the surface energy of the surface of the dielectric film in the laminate of the light-transmitting member and the dielectric film at the time of peeling was measured, where the surface energy was in contact with the light-transmitting member. The results are shown in Figure 2. Note that in the samples in which the dielectric film D4, D6, or D7 was formed on the YAG plate by sputtering, the light-transmitting member cracked before the dielectric film was peeled off from the light-transmitting member, so the surface energy could not be measured. In these three samples, the surface energy was 8 J / cm 2 The refractive index (n value) of each dielectric film is also shown in FIG.

[0031] As shown in Figure 2, high surface energy was obtained for the dielectric films D4, D6, and D7. Furthermore, the dielectric films D6 and D7 have a higher refractive index than the dielectric film D4. Therefore, from the viewpoints of bonding strength and refractive index, the dielectric films D6 and D7 are promising.

[0032] The inventors of the present application investigated the relationship between the composition of a dielectric film and its transmittance. In this investigation, a sapphire substrate with a thickness of 850 μm was prepared as a light-transmitting member, and a dielectric film shown in Table 2 below was formed on the light-transmitting member. The thickness of the dielectric film was 1 μm. The values ​​in parentheses in the material column in Table 2 (unit: at%) are values ​​converted into the proportion of metal elements.

[0033] [Table 2]

[0034] The transmittance of the dielectric film was then measured, and the results are shown in Figures 3 and 4. Figure 3 also shows, as a reference, the measurement result of the transmittance of a sapphire substrate on which no dielectric film was formed.

[0035] As shown in Figure 3, dielectric films D1, D5, D7, and D8 exhibited transmittance comparable to that of the reference over a wide wavelength range, including blue light wavelengths of approximately 460 nm. Furthermore, as shown in Figure 4, in the wavelength range of 400 nm to 800 nm, dielectric film D7 exhibited the highest transmittance among Al-containing dielectric films D4, D6, D7, and D9. Therefore, from the perspective of transmittance, dielectric film D7 is promising.

[0036] Generally, the larger the band gap of a metal oxide, the higher its optical transmittance. Therefore, among Al2O3, Ta2O5, Nb2O5, and TiO2, the transmittance decreases in the following order: Al2O3, Ta2O5, Nb2O5, and TiO2. Based on this general theory, the transmittance of the composite oxide of Al2O3 and Ta2O5, the composite oxide of Al2O3 and Nb2O5, and the composite oxide of Al2O3 and TiO2 is lower than that of Al2O3.

[0037] However, as shown in Figures 3 and 4, dielectric film D7 made of a composite oxide of Al2O3 and Ta2O5 had a higher transmittance than dielectric film D4 made of Al2O3. In other words, the results obtained are different from the general theory above. The reason for this is not clear, but it is thought that the surfactant effect of Ta2O5 in the composite oxide formed dielectric film D7 densely, suppressing light scattering within dielectric film D7.

[0038] On the other hand, as shown in Figures 3 and 4, dielectric film D6 made of a composite oxide of Al2O3 and Nb2O5 and dielectric film D9 made of a composite oxide of Al2O3 and TiO2 had lower transmittance than dielectric film D4. This is thought to be because the band gaps of Nb2O5 and TiO2 are smaller than that of Al2O3, and the surfactant effect is not exerted, resulting in a film that is more sparse than dielectric film D7.

[0039] Based on the results of these investigations, the inventors of the present application investigated the relationship between the proportions of Al and Ta in oxides containing Al and Ta and the light extraction efficiency. In this investigation, a simulation was performed using the structure of the light-emitting device 1 according to the first embodiment shown in FIG. 1 as a model to examine the change in light extraction efficiency when the proportions of Al and Ta in the dielectric film 22 were varied. In this simulation, the sum of the first amount of Al contained in the oxide and the second amount of Ta contained in the oxide was taken as 100 at% and the second amount was varied to calculate the light extraction efficiency. The refractive index of the semiconductor portion 10 was set to 2.4, and the refractive index of the light-transmitting member 23 was set to 1.83. The results are shown in FIG. 5. The light extraction efficiency on the vertical axis in FIG. 5 is a value normalized by the light extraction efficiency when the second amount is 0 at%.

[0040] As shown in Figure 5, when the second amount is greater than 0 at% and not greater than 60 at% the light extraction efficiency is greater than 1.00. As described above, based on general theory, the transmittance of the composite oxide of Al2O3 and Ta2O5, the composite oxide of Al2O3 and Nb2O5, and the composite oxide of Al2O3 and TiO2 is lower than the transmittance of Al2O3. In contrast, the present inventors have discovered that when the second amount is greater than 0 at% and not greater than 60 at% the light extraction efficiency is higher than when the second amount is 0 at%. This finding was not previously known and was newly discovered by the present inventors.

[0041] 3, the dielectric film D8 made of Ta2O5 also has high transmittance, but the dielectric film D8 corresponds to the dielectric film when the second amount is 100 at% in the above simulation, and therefore the light extraction efficiency is low. This is thought to be because the refractive index of Ta2O5 is about 2.2, and the refractive index of the dielectric film D8 is closer to the refractive index of the semiconductor portion 10 (about 2.4) than to the refractive index of the light-transmitting member 23 (about 1.75 to 1.85).

[0042] This embodiment is based on these findings, and the refractive index of the dielectric film 22 is smaller than that of the semiconductor portion 10 and closer to that of the light-transmitting member 23 than that of the semiconductor portion 10. Furthermore, the oxide contained in the dielectric film 22 contains Al and Ta, and when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at%, the second amount is greater than 0 at% and not more than 60 at%. Therefore, it is possible to achieve both improved light extraction efficiency and improved bonding strength with the light-transmitting member. The first amount and the second amount can be measured by energy dispersive X-ray analysis (EDX).

[0043] When the second amount is greater than 0 at% and less than 25 at%, particularly high bonding strength can be obtained. Also, when the second amount is 25 at% or more and 60 at% or less, preferably 30 at% or more and 50 at% or less, and more preferably 35 at% or more and 45 at% or less, particularly high light extraction efficiency can be obtained.

[0044] The arithmetic mean roughness Ra of the upper surface 10c of the semiconductor portion 10 is preferably 100 nm or more and 250 nm or less. When this arithmetic mean roughness Ra is 100 nm or more and 250 nm or less, a region exists near the boundary between the semiconductor portion 10 and the dielectric film 22 where the refractive index is lower than the refractive index of the semiconductor portion 10 and higher than the refractive index of the dielectric film 22, and the change in the refractive index in the light emission direction becomes gradual. Therefore, the light extraction efficiency can be further improved.

[0045] The refractive index of the dielectric film 22 is preferably higher than the refractive index of the light-transmitting member 23. When the refractive index of the dielectric film 22 is higher than the refractive index of the light-transmitting member 23, the refractive index decreases in the order of the semiconductor portion 10, the dielectric film 22, and the light-transmitting member 23 along the light emission direction, and therefore the light extraction efficiency can be further improved.

[0046] The amount of Ta contained in the dielectric film 22 is preferably greater on the lower surface side of the dielectric film 22 than on the upper surface side. When the amount of Ta contained in the dielectric film 22 is greater on the lower surface side of the dielectric film 22 than on the upper surface side, the light extraction efficiency can be further improved. This is particularly effective when the second amount is 40 at % or less, as shown in FIG. 5.

[0047] For example, the light-emitting layer emits light having a peak emission wavelength in the range of 350 nm to 500 nm. For example, when the phosphor contained in the light-transmitting member 23 converts light having a peak emission wavelength in the range of 350 nm to 500 nm (blue light) into light having a peak emission wavelength in the range of 565 nm to 590 nm (yellow light), the light-emitting device 1 can emit white light.

[0048] The dielectric film 22 may have a plurality of films. For example, the dielectric film 22 may have a first dielectric film such as a SiON film that is in contact with the semiconductor portion 10, and a second dielectric film that contains an oxide containing Al and Ta and is disposed between the first dielectric film and the light-transmitting member 23. The light-emitting device 1 having the dielectric film 22 that has a plurality of films can also achieve both improved light extraction efficiency and improved bonding strength.

[0049] Next, a method for manufacturing the light emitting device according to the first embodiment will be described. Figures 6 to 13 are cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment.

[0050] First, as shown in FIG. 6, a wafer 20 is prepared. The wafer 20 has a substrate 11, a plurality of semiconductor portions 10, a p-side electrode 12, a first insulating film 15, a second insulating film 16, a first conductive member 14, and a second conductive member 13. The substrate 11 has a main surface 11a. The plurality of semiconductor portions 10 are arranged at a distance from each other on the main surface 11a. The thickness of the substrate 11 is, for example, not less than 500 μm and not more than 1000 μm.

[0051] The plurality of semiconductor portions 10 are formed, for example, as follows. That is, after a semiconductor structure including a first semiconductor layer 10n, a light emitting layer 10a, and a second semiconductor layer 10p is stacked on a substrate 11, a resist mask is formed on each of the regions of the semiconductor structure that will become the plurality of semiconductor portions 10. Then, the resist mask is used to remove parts of the semiconductor structure, thereby forming the plurality of semiconductor portions 10. Reactive ion etching (RIE), for example, can be used to remove the semiconductor structure.

[0052] As will be described later with reference to FIG. 14, the semiconductor portions 10 are arranged in a matrix on the major surface 11a in a plan view. In this specific example, adjacent semiconductor portions 10 are connected via connection portions 19. The connection portions 19 are arranged on the major surface 11a, similar to the semiconductor portions 10. The connection portions 19 are continuous with the first semiconductor layer 10n and are formed of a semiconductor layer containing an n-type semiconductor. The connection portions 19 are, for example, portions of the semiconductor layer containing an n-type semiconductor that remain unremoved during the removal of the semiconductor structure in the step of forming the plurality of semiconductor portions 10 described above. Note that the connection portions 19 do not necessarily have to be formed.

[0053] For example, the semiconductor portion 10 is formed by a metal organic chemical vapor deposition (MOCVD) method. The semiconductor portion 10 is formed by forming the first semiconductor layer 10n, the light emitting layer 10a, and the second semiconductor layer 10p in this order from the main surface 11a. The recesses R and the exposed portions S can be formed, for example, by forming a resist mask on the semiconductor portion 10 except for the regions to be the recesses R and the regions to be the exposed portions S, and then removing part of the nitride semiconductor layer using the resist mask. Note that the nitride semiconductor layer may be stacked on the substrate 11, and after forming the recesses R and the exposed portions S in each of the regions to be the semiconductor portion 10, the nitride semiconductor layer may be separated into a plurality of semiconductor portions 10.

[0054] The p-side electrode 12 can be formed by, for example, sputtering or vapor deposition. The first insulating film 15 can be formed by, for example, sputtering or vapor deposition. After the first insulating film 15 is formed, an opening can be formed in the first insulating film 15 by removing a portion of the first insulating film 15. The first insulating film 15 can be removed by, for example, wet etching or dry etching. The second insulating film 16 can be formed by, for example, sputtering or vapor deposition. After the second insulating film 16 is formed, an opening can be formed in the second insulating film 16 by removing a portion of the second insulating film 16. The second insulating film 16 can be removed by, for example, wet etching or dry etching. The first conductive member 14 and the second conductive member 13 can be formed by, for example, sputtering or vapor deposition.

[0055] Next, as shown in FIG. 7 , a resin member 18 is placed on the wafer 20. For example, after the resin member 18 is placed on the support substrate 21, the wafer 20 and the support substrate 21 are bonded via the resin member 18 with the resin member 18 positioned between the substrate 11 and the support substrate 21. Through this process, the resin member 18 is formed so as to cover the side surfaces of the semiconductor portion 10, the second insulating film 16, the first conductive member 14, and the second conductive member 13. The resin member 18 is also placed between two adjacent semiconductor portions 10. That is, the resin member 18 is placed on the main surface 11a of the substrate 11. In the example of FIG. 7 , the resin member 18 is placed on the main surface 11a via the connecting portion 19. However, if the connecting portion 19 is not placed, the resin member 18 is placed in contact with the main surface 11a of the substrate 11. For example, an epoxy resin, an acrylic resin, a polyimide resin, or the like can be used as the resin member 18.

[0056] The support substrate 21 is disposed on the resin member 18 and is bonded to the resin member 18. The support substrate 21 may be, for example, a sapphire substrate or a silicon substrate.

[0057] Next, as shown in FIG. 8, the substrate 11 is removed from the wafer 20 on which the resin member 18 and the support substrate 21 are disposed. In this embodiment, after removing the substrate 11, the first semiconductor layer 10n is partially removed, thereby removing the connection portion 19 shown in FIGS. 6 and 7, and exposing a portion of the semiconductor portion 10 and a portion of the resin member 18. Note that FIG. 8 is shown upside down compared to FIGS. 6 and 7. In FIGS. 6 and 7, the semiconductor portion 10 is disposed below the support substrate 21, whereas in FIG. 8, the semiconductor portion 10 is disposed above the support substrate 21. Similarly, FIGS. 9 to 13, which will be described later, are shown upside down compared to FIGS. 6 and 7.

[0058] The substrate 11 can be removed by a method such as laser lift-off (LLO), grinding, polishing, or etching. When the substrate 11 is a sapphire substrate, it is preferable to remove the substrate 11 by the LLO method. After removing the substrate 11, the semiconductor portion 10 has a first surface 10d facing the support substrate 21 and a second surface 10b located on the opposite side to the first surface 10d. The second surface 10b is the exposed surface of the semiconductor portion 10 that is exposed by removing the substrate 11. The exposed surface of the resin member 18 that is exposed by removing the semiconductor portion 10 is referred to as the resin upper surface 18a.

[0059] In this manner, an intermediate member 31 having the support substrate 21, the resin member 18, and a plurality of semiconductor portions 10 is obtained.

[0060] Next, as shown in FIG. 9, the second surface 10b is roughened. This roughening step results in an intermediate member 32 including a semiconductor portion 10 having a roughened upper surface 10c. Roughening the second surface 10b, which is the main light extraction surface of the semiconductor portion 10, to form the upper surface 10c can improve the light extraction efficiency of the light-emitting device. Roughening the second surface 10b can be achieved by, for example, RIE using a chlorine-containing gas or wet etching using an alkaline solution such as tetramethyl ammonium hydroxide (TMAH). The arithmetic mean roughness Ra of the second surface 10b before the roughening step is, for example, 0.1 nm or more and 0.5 nm or less. The arithmetic mean roughness Ra of the upper surface 10c after the roughening step is, for example, 100 nm or more and 250 nm or less.

[0061] As described above, second surface 10b is preferably roughened, but does not necessarily have to be roughened. By omitting roughening second surface 10b, the manufacturing process for the light emitting device can be shortened.

[0062] FIG. 14 is a plan view illustrating a method for manufacturing the light emitting device according to the first embodiment. FIG. 14 shows the state after the step of roughening the second surface 10b described above. FIG. 14 shows an intermediate member 32 with the roughened upper surface 10c exposed. As shown in FIG. 14, the semiconductor portions 10 with their upper surfaces 10c exposed are arranged in a matrix. Resin members 18 are disposed between adjacent semiconductor portions 10, and resin upper surfaces 18a are exposed from the semiconductor portions 10.

[0063] In plan view, the outer edge of each of the upper surfaces 10c of the semiconductor portions 10 is referred to as the outer edge 10t. In this example, the outer shape of the outer edge 10t is approximately rectangular. In plan view, the end of the resin upper surface 18a that overlaps the outer edge 10t is referred to as the resin end 18t.

[0064] In plan view, planned singulation lines 30 are set between adjacent semiconductor portions 10. The planned singulation lines 30 are imaginary lines set for cutting a light-transmitting member 23 and a dielectric film 22, which will be described later, and singulating them into a plurality of light-emitting devices 1. A plurality of planned singulation lines 30 are set along two directions that are perpendicular to each other.

[0065] Next, as shown in FIG. 10 , a dielectric film 22 is formed to continuously cover a portion of the semiconductor portion 10 and a portion of the resin member 18. The dielectric film 22 can be formed, for example, by sputtering. The dielectric film 22 is formed to cover the upper surface 10c of the semiconductor portion 10, the upper resin surface 18a of the resin member 18, and the side surfaces of the resin member 18 from the resin end 18t to the upper resin surface 18a. The thickness of the dielectric film 22 is, for example, 1 μm to 50 μm. This shortens the time required for the process of flattening the upper surface of the dielectric film 22, which will be described later, while ensuring a sufficient arithmetic mean roughness Ra. Note that FIG. 10 shows the state of the dielectric film 22 after the process of flattening the upper surface of the dielectric film 22, which will be described later, has been performed. The arithmetic mean roughness Ra of the upper surface of the dielectric film 22 before the process of flattening the upper surface of the dielectric film 22 is greater than the arithmetic mean roughness Ra of the upper surface of the dielectric film 22 after the process of flattening the upper surface of the dielectric film 22 has been performed.

[0066] After the dielectric film 22 is formed, the upper surface of the dielectric film 22 is made nearly flat. Chemical mechanical polishing (CMP) can be used as a method for making the upper surface of the dielectric film 22 nearly flat. The arithmetic mean roughness Ra of the upper surface of the dielectric film 22 before the step of making the upper surface of the dielectric film 22 nearly flat is, for example, 50 nm or more and 200 nm or less. The arithmetic mean roughness Ra of the upper surface of the dielectric film 22 after the step of making the upper surface of the dielectric film 22 nearly flat is, for example, 0.1 nm or more and 0.5 nm or less. In this specification, making nearly flat means making the arithmetic mean roughness Ra of the surface to be made nearly flat approach zero.

[0067] The dielectric film 22 can have a nearly flat upper surface 22a by, for example, polishing about one-third of its thickness after formation. For example, after forming the dielectric film 22 to a thickness of about 10 μm, the nearly flat upper surface 22a can be obtained by polishing about 3 μm of the 10 μm thickness.

[0068] 11 , the light-transmitting member 23 is placed on the nearly flat upper surface 22a of the dielectric film 22. The light-transmitting member 23 is directly bonded to the nearly flat upper surface 22a of the dielectric film 22. The light-transmitting member 23 has a third surface 23a facing the upper surface 22a of the dielectric film 22.

[0069] For example, surface activated bonding (SAB) can be used to directly bond the dielectric film 22 and the light-transmitting member 23. In SAB, the upper surface 22a, which is the bonding surface of the dielectric film 22, and the third surface 23a, which is one bonding surface of the light-transmitting member 23, are activated by surface treatment, and then the dielectric film 22 and the light-transmitting member 23 are directly bonded together. The upper surface 22a of the dielectric film 22 and the third surface 23a of the light-transmitting member 23 can be activated by, for example, surface treatment in which an ion beam containing ions such as Ar is irradiated onto each bonding surface in a vacuum. Directly bonding the dielectric film 22 and the light-transmitting member 23 can improve light extraction efficiency without light absorption by the adhesive, compared to using an adhesive containing, for example, a resin. In direct bonding, applying a sufficient load between the upper surface 22a of the dielectric film 22 and the third surface 23a of the light-transmitting member 23 can achieve higher bonding strength. In the case of direct bonding, it is preferable to bond the surfaces with a lower arithmetic mean roughness Ra, for example, 0.1 nm to 0.5 nm, which allows a sufficient load to be applied between the surfaces to achieve high bonding strength.

[0070] 12, the support substrate 21 and the resin member 18 are removed, and an intermediate member 33 is formed in which a plurality of semiconductor portions 10 are bonded to a set of the dielectric film 22 and the light-transmitting member 23. The resin member 18 is removed by, for example, wet etching or the like.

[0071] 13, the intermediate member 33 is cut and singulated into a plurality of light emitting devices 1. Each of the plurality of light emitting devices 1 has a semiconductor portion 10, a dielectric film 22, and a light-transmitting member 23. The method for cutting the intermediate member 33 is not limited. For example, before arranging the light-transmitting member 23, a crack may be formed along the planned singulation line 30 by irradiating the dielectric film 22 with laser light, and the crack may be used as the starting point for cutting.

[0072] In this manner, a plurality of light emitting devices 1 can be manufactured.

[0073] The dielectric film 22 may be formed by bias sputtering. When the dielectric film 22 is formed by sputtering, gaps are unlikely to form between the dielectric film 22 and the semiconductor portion 10, but bias sputtering can make gaps even less likely to form.

[0074] The dielectric film 22 may be formed from a plurality of films. For example, a SiON film may be formed as a first dielectric film so as to be in contact with the semiconductor portion 10, and CMP of the SiON film may be performed. A second dielectric film containing an oxide containing Al and Ta may be formed so as to be in contact with the SiON film, and CMP of the second dielectric film may be performed. A light-emitting device 1 having a dielectric film 22 formed by this method may also achieve both improved light extraction efficiency and improved bonding strength.

[0075] Instead of forming the dielectric film 22 so as to be in contact with the semiconductor portion 10, the dielectric film 22 may be formed on the surface opposite to the surface that will become the third surface 23a of the light-transmitting member 23, and after performing CMP on the dielectric film 22, the dielectric film 22 may be bonded to the semiconductor portion 10. When the light-transmitting member 23 is a sintered body, it is not easy to increase the flatness of the surface opposite to the surface that will become the third surface 23a, but by forming the dielectric film 22 on this surface by a sputtering method, the bonding strength between the light-transmitting member 23 and the dielectric film 22 can be improved compared to direct bonding.

[0076] (Second embodiment) The second embodiment differs from the first embodiment mainly in that a light-transmitting member is provided between the semiconductor portion 10 and the dielectric film 22. Fig. 15 is a cross-sectional view illustrating the light-emitting device according to the second embodiment.

[0077] The light emitting device 2 according to the second embodiment includes a semiconductor section 10, a light-transmitting member 24 (hereinafter also referred to as a first light-transmitting member 24), a dielectric film 22, and a light-transmitting member 23 (hereinafter also referred to as a second light-transmitting member 23). The semiconductor section 10, the dielectric film 22, and the second light-transmitting member 23 have the same configurations as those in the first embodiment. However, the upper surface 10c does not have to be roughened.

[0078] The first light-transmissive member 24 is disposed between the semiconductor portion 10 and the dielectric film 22. The first light-transmissive member 24 has a refractive index smaller than that of the semiconductor portion 10 and closer to that of the dielectric film 22 than that of the semiconductor portion 10. That is, the refractive index of the first light-transmissive member 24 is smaller than that of the semiconductor portion 10, and the absolute value of the difference between the refractive index of the first light-transmissive member 24 and that of the dielectric film 22 is smaller than the absolute value of the difference between the refractive index of the first light-transmissive member 24 and that of the semiconductor portion 10. The refractive index of the first light-transmissive member 24 is, for example, 1.7 to 1.9, and preferably 1.7 to 1.8. The thickness of the first light-transmissive member 24 is, for example, 10 μm to 50 μm, preferably 15 μm to 40 μm, and more preferably 25 μm to 35 μm.

[0079] The other configuration of the light emitting device 2 is the same as that of the light emitting device 1.

[0080] As with the first embodiment, the second embodiment can also achieve both improved light extraction efficiency and improved bonding strength between the dielectric film 22 and the second light-transmissive member 23. Furthermore, the refractive index of the first light-transmissive member 24 can be made smaller than the refractive index of the dielectric film 22 in order to improve the light extraction efficiency by reflecting the return light from the second light-transmissive member 23. As the first light-transmissive member 24, for example, a light-transmissive substrate such as a sapphire substrate can be used.

[0081] Next, a method for manufacturing the light emitting device according to the second embodiment will be described. Figures 16 to 21 are cross-sectional views illustrating the method for manufacturing the light emitting device according to the second embodiment.

[0082] First, similarly to the first embodiment, a wafer 20 is prepared (see FIG. 6), and a resin member 18 is placed on the wafer 20. The substrate 11 will later become the first light-transmissive member 24, and is, for example, a sapphire substrate. For example, after placing the resin member 18 on a support substrate 21, the wafer 20 and the support substrate 21 are bonded via the resin member 18 with the resin member 18 positioned between the substrate 11 and the support substrate 21 (see FIG. 7).

[0083] 16, the main surface of the substrate 11 opposite to the main surface 11a is polished. The thickness of the substrate 11 after polishing is, for example, 10 μm or more and 50 μm or less, preferably 15 μm or more and 40 μm or less, and more preferably 25 μm or more and 35 μm or less. A first light-transmissive member 24 is obtained from the substrate 11 by polishing.

[0084] Next, laser light is irradiated into the inside of the first light-transmissive member 24. The laser light is focused at a position at a specific depth inside the first light-transmissive member 24, and the energy of the laser light is concentrated at that position, forming modified regions 41 as shown in Fig. 17. The modified regions 41 formed by the irradiation of the laser light generate stress, and the stress causes cracks 42 to form inside the first light-transmissive member 24. The modified regions 41 and cracks 42 are formed along the planned singulation lines 30 (see Fig. 14).

[0085] A laminate of the dielectric film 22 and the second light-transmissive member 23 is prepared separately, and as shown in Fig. 18, the dielectric film 22 is bonded to the first light-transmissive member 24. In preparing the laminate of the dielectric film 22 and the second light-transmissive member 23, for example, the dielectric film 22 is formed by sputtering on the surface of the second light-transmissive member 23 opposite to the surface that will become the third surface 23a, the dielectric film 22 is subjected to CMP, and the thickness of the second light-transmissive member 23 is adjusted by polishing.

[0086] Next, as shown in FIG. 19, the support substrate 21 and the resin member 18 are removed, and an intermediate member 63 is formed in which a plurality of semiconductor portions 10 are bonded to a set of a first light-transmissive member 24, a dielectric film 22, and a second light-transmissive member 23.

[0087] Next, laser light is irradiated onto the inside of the second light-transmissive member 23. The laser light is focused at a position at a specific depth inside the second light-transmissive member 23, and the energy of the laser light is concentrated at that position, forming modified regions 51 as shown in FIG. 20. The modified regions 51 formed by the irradiation of the laser light generate stress, and the stress causes cracks 52 to form inside the second light-transmissive member 23. The modified regions 51 and cracks 52 are formed along the planned singulation lines 30.

[0088] 21 , the intermediate member 63 is cut and separated into a plurality of light emitting devices 2. Each of the plurality of light emitting devices 2 has a semiconductor portion 10, a first light-transmissive member 24, a dielectric film 22, and a second light-transmissive member 23. The method for cutting the intermediate member 63 is not limited.

[0089] In this manner, a plurality of light emitting devices 2 can be manufactured.

[0090] In the second embodiment, the dielectric film 22 and the second light-transmissive member 23 may be disposed in the same manner as in the first embodiment.

[0091] The above describes in detail preferred embodiments, but the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0092] The present specification includes the following embodiments. 1. a semiconductor portion including a light emitting layer; a dielectric film including an oxide and disposed on an upper surface of the semiconductor portion; a light-transmitting member disposed on an upper surface of the dielectric film; and the refractive index of the dielectric film is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the light-transmitting member than the refractive index of the semiconductor portion; the oxide includes Al and Ta; a light emitting device, wherein when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at %, the second amount is greater than 0 at % and not more than 60 at %. 2. 2. The light emitting device of claim 1, wherein the second amount is greater than 0 at % and less than 25 at %. 3. 2. The light emitting device according to claim 1, wherein the second amount is 25 at % or more and 60 at % or less. 4. 4. The light emitting device according to any one of 1 to 3 above, wherein the arithmetic mean roughness Ra of the upper surface of the semiconductor portion is 100 nm or more and 250 nm or less. 5. 5. The light emitting device according to any one of 1 to 4 above, wherein the refractive index of the dielectric film is greater than the refractive index of the light-transmitting member. 6. 6. The light emitting device according to any one of 1 to 5 above, wherein the amount of Ta contained in the dielectric film is greater on the lower surface side of the dielectric film than on the upper surface side thereof. 7. 7. The light emitting device according to any one of 1 to 6 above, wherein the light-transmitting member contains a phosphor. 8. 8. The light emitting device according to any one of 1 to 7 above, wherein the light emitting layer emits light having an emission peak wavelength in the range of 350 nm to 500 nm. 9. 9. The light emitting device according to any one of 1 to 8 above, wherein the refractive index of the light-transmitting member is 1.7 or more and 1.9 or less. 10. 10. The light emitting device according to any one of 1 to 9 above, wherein the refractive index of the semiconductor portion is 2.0 or more and 3.0 or less. 11. 11. The light emitting device according to any one of 1 to 10 above, wherein the thickness of the dielectric film is 1 μm or more and 50 μm or less. 12. 12. The light emitting device according to any one of 1 to 11 above, wherein the thickness of the light-transmitting member is 100 μm or more and 400 μm or less. 13. a semiconductor portion including a light emitting layer; a first light-transmissive member disposed on an upper surface of the semiconductor portion; a dielectric film including an oxide and disposed on an upper surface of the first light-transmitting member; a second light-transmitting member disposed on an upper surface of the dielectric film; and the refractive index of the dielectric film is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the second light-transmitting member than the refractive index of the semiconductor portion; the refractive index of the first light-transmitting member is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the dielectric film than the refractive index of the semiconductor portion; the oxide includes Al and Ta; a light emitting device, wherein when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at %, the second amount is greater than 0 at % and not more than 60 at %. 14. 14. The light emitting device according to claim 13, wherein the refractive index of the first light-transmissive member is smaller than the refractive index of the dielectric film. 15. 15. The light emitting device according to claim 13 or 14, wherein the first light-transmissive member is a sapphire substrate. [Explanation of symbols]

[0093] 1: Light emitting device 10: Semiconductor Department 10a: Light-emitting layer 10c:Top surface 10n: first semiconductor layer 10p: second semiconductor layer 22: Dielectric film 22a:Top surface 23: Translucent member (second translucent member) 24: Translucent member (first translucent member)

Claims

1. a semiconductor portion including a light emitting layer; a dielectric film including an oxide and disposed on an upper surface of the semiconductor portion; a light-transmitting member disposed on an upper surface of the dielectric film; and the refractive index of the dielectric film is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the light-transmitting member than the refractive index of the semiconductor portion; the oxide includes Al and Ta; a light-emitting device, wherein when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at %, the second amount is greater than 0 at % and not more than 60 at %.

2. The light emitting device of claim 1 , wherein the second amount is greater than 0 at % and less than 25 at %.

3. The light emitting device according to claim 1 , wherein the second amount is equal to or greater than 25 at % and equal to or less than 60 at %.

4. 4. The light emitting device according to claim 1, wherein the arithmetic mean roughness Ra of the upper surface of the semiconductor portion is 100 nm or more and 250 nm or less.

5. 4. The light emitting device according to claim 1, wherein the refractive index of the dielectric film is greater than the refractive index of the light-transmitting member.

6. 4. The light emitting device according to claim 1, wherein the amount of Ta contained in the dielectric film is greater on the lower surface side of the dielectric film than on the upper surface side of the dielectric film.

7. The light emitting device according to claim 1 , wherein the light-transmitting member includes a phosphor.

8. 4. The light emitting device according to claim 1, wherein the light emitting layer emits light having an emission peak wavelength in the range of 350 nm to 500 nm.

9. 4. The light emitting device according to claim 1, wherein the refractive index of the light-transmitting member is 1.7 or more and 1.9 or less.

10. 4. The light emitting device according to claim 1, wherein the refractive index of the semiconductor portion is equal to or greater than 2.0 and equal to or less than 3.

0.

11. 4. The light emitting device according to claim 1, wherein the dielectric film has a thickness of 1 μm or more and 50 μm or less.

12. 4. The light emitting device according to claim 1, wherein the thickness of the light-transmitting member is 100 [mu]m or more and 400 [mu]m or less.

13. a semiconductor portion including a light emitting layer; a first light-transmitting member disposed on an upper surface of the semiconductor portion; a dielectric film including an oxide and disposed on an upper surface of the first light-transmitting member; a second light-transmitting member disposed on an upper surface of the dielectric film; and the refractive index of the dielectric film is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the second light-transmitting member than the refractive index of the semiconductor portion; the refractive index of the first light-transmitting member is smaller than the refractive index of the semiconductor portion and closer to the refractive index of the dielectric film than the refractive index of the semiconductor portion; the oxide includes Al and Ta; a light-emitting device, wherein when the sum of a first amount of Al contained in the oxide and a second amount of Ta contained in the oxide is taken as 100 at %, the second amount is greater than 0 at % and not more than 60 at %.

14. The light emitting device according to claim 13 , wherein the refractive index of the first light-transmissive member is smaller than the refractive index of the dielectric film.

15. The light emitting device according to claim 13 , wherein the first light-transmissive member is a sapphire substrate.

Images