Substrate processing method and substrate processing equipment

Abstract

To reduce a particle without decreasing throughput.SOLUTION: Substrate processing equipment comprises a processing container, a first supply line, a second supply line, an exhaust line, a first vent line, and a second vent line, and implements a substrate processing method. The first supply line supplies first source gas into the processing container. The second supply line supplies the first source gas into the processing container. The exhaust line exhausts the gas. The first vent line connects the first supply line and the exhaust line. The second vent line connects the second supply line and the exhaust line. The substrate processing method includes: a step (a) of supplying the first source gas into the processing container from one of the first supply line and the second supply line, and a step (b) of cleaning the other of the first supply line and the second supply line via a first vent line or a second vent line connected to the other of the first supply line and the second supply line.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] For example, Patent Document 1 discloses a film formation apparatus that performs a cycle of alternately supplying and exhausting a first reactive gas and a second reactive gas multiple times in a vacuum chamber, thereby causing the reactive gases to react with each other and forming a thin film on the surface of a substrate. The film formation apparatus includes a purge gas supply unit that supplies a purge gas to a processing space between the timing of supplying the first reactive gas and the timing of supplying the second reactive gas.

[0003] For example, Patent Document 2 discloses a substrate processing apparatus including a processing vessel having a substrate holder for holding a substrate to be processed and evacuated at an exhaust port, and a raw material gas supply system for alternately supplying first and second raw material gases in the form of laminar flows to the processing vessel. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-87238 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-6733 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a substrate processing method and a substrate processing apparatus that can reduce particles without reducing throughput. [Means for solving the problem]

[0006] In one aspect of the present disclosure, a substrate processing apparatus performs a substrate processing method. The substrate processing apparatus includes a processing vessel, a first supply line, a second supply line, an exhaust line, a first vent line, and a second vent line. The first supply line supplies a first source gas into the processing vessel. The second supply line supplies the first source gas into the processing vessel. The exhaust line exhausts the gas. The first vent line connects the first supply line to the exhaust line. The second vent line connects the second supply line to the exhaust line. The substrate processing method includes (a) supplying a first source gas into the processing vessel from one of the first supply line or the second supply line, and (b) cleaning the other of the first supply line or the second supply line through the first vent line or the second vent line connected to the other of the first supply line or the second supply line. [Effects of the Invention]

[0007] According to the present disclosure, particles can be reduced without reducing throughput. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic diagram of a substrate processing apparatus according to a reference example. [Figure 2] FIG. 2 is a schematic diagram of a substrate processing apparatus according to an embodiment. [Figure 3] FIG. 3 is a flowchart showing a substrate processing method according to an embodiment. [Figure 4] FIG. 4 is a diagram showing an example of a recipe for simultaneously performing film formation and cleaning. [Figure 5] FIG. 5 is a schematic diagram of a substrate processing apparatus according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following describes in detail embodiments of the disclosed substrate processing method and substrate processing apparatus with reference to the drawings. Note that the substrate processing method and substrate processing apparatus according to the present disclosure are not limited to these embodiments, and the following embodiments can be appropriately combined within the scope of the present disclosure, so long as they do not cause any contradiction between the configurations and processing contents.

[0010] The drawings referred to below are schematic diagrams for the convenience of explanation, and therefore some details may be omitted and the dimensional proportions may not necessarily correspond to those of the actual objects.

[0011] [Substrate Processing Apparatus According to Reference Example] A substrate processing apparatus according to a reference example will be briefly described with reference to Fig. 1, and then a substrate processing apparatus according to an embodiment of the present disclosure will be described. Fig. 1 is a schematic diagram of the substrate processing apparatus according to the reference example.

[0012] The substrate processing apparatus 90 according to the reference example includes a processing vessel 1, an exhaust system 3, and a gas supply unit 200. The substrate processing apparatus 90 also includes a substrate support unit 11. The substrate support unit 11 is disposed within the processing vessel 1 and supports a substrate. The processing vessel 1 includes a processing space 12 defined by the ceiling wall, side walls, and substrate support unit 11 of the processing vessel 1. The processing vessel 1 is formed of a conductor such as aluminum and is grounded. The exhaust system 3 includes an exhaust line 31 and an exhaust device 32. The exhaust line 31 is connected to a gas outlet provided in the processing vessel 1. The exhaust device 32 exhausts gas.

[0013] The gas supply unit 200 has two gas supply systems: gas supply unit 200a and gas supply unit 200b. The gas supply unit 200a has a first source gas unit 202a and a supply line 201a1. The gas supply unit 200b has a second source gas unit 202b and a supply line 201b1. The vent line 201a2 branches off from the supply line 201a1 at a branch point Q1 and connects the supply line 201a1 to the exhaust line 31. The vent line 201b2 branches off from the supply line 201b1 at a branch point Q2 and connects the supply line 201b1 to the exhaust line 31.

[0014] A first on-off valve 211a is provided in the supply line 201a1 downstream of the branch point Q1. A second on-off valve 211b is provided in the vent line 201a2. The first on-off valve 211a controls the supply and stop of the supply of the first source gas from the supply line 201a1 to the processing chamber 1. The second on-off valve 211b controls the exhaust and stop of the exhaust of the first source gas from the vent line 201a2 to the exhaust line 31.

[0015] A third on-off valve 211c is provided on the supply line 201b1 downstream of the branch point Q2. A fourth on-off valve 211d is provided on the vent line 201b2. The third on-off valve 211c controls the supply and stop of the second source gas from the supply line 201b1 to the processing chamber 1. The fourth on-off valve 211d controls the exhaust and stop of the second source gas from the vent line 201b2 to the exhaust line 31.

[0016] 1, the first and third on-off valves 211a and 211c are open, and the second and fourth on-off valves 211b and 211d are closed. This allows the first and second source gases to be supplied to the processing chamber 1 from the supply lines 201a1 and 201b1. The first and second source gases then react with each other in the processing space 12, forming a film, such as an organic film, on the substrate W.

[0017] In the deposition polymerization process for forming organic films such as polyurea, polyimide, polyamide, and polyurethane, high concentrations of first and second source gases are supplied, or these source gases are supplied for long periods of time, which may generate particles in the piping of supply line 201a1 and supply line 201b1.

[0018] As a measure against particles, conventionally, the supply line 201a1 and the supply line 201b1 are evacuated and purged with a purge gas. In this case, since a process of evacuating and purging the supply line is added after film formation, the generation of particles is suppressed but the throughput is reduced.

[0019] In contrast, a substrate processing apparatus according to an embodiment of the present disclosure is provided with two gas supply lines and a vent line. The substrate processing apparatus supplies a source gas into a processing chamber 1 using one of the two gas supply lines, and simultaneously exhausts and purges the other supply line via the vent line. This allows the substrate processing apparatus to perform film formation on a substrate and cleaning of the supply line in parallel. Therefore, the substrate processing apparatus does not need to add a process for exhausting and purging the supply line after film formation. As a result, the substrate processing apparatus can reduce particles without reducing throughput. A substrate processing apparatus and a substrate processing method according to an embodiment are described below.

[0020] [Substrate processing equipment] A configuration of a substrate processing apparatus according to an embodiment of the present disclosure will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus according to the embodiment.

[0021] The substrate processing apparatus 10 performs processing such as film formation on the substrate W. For example, the substrate processing apparatus 10 performs a film formation process for an organic film such as polyurea, polyimide, polyamide, or polyurethane by vapor deposition polymerization. The substrate W may be a semiconductor wafer or a glass substrate. Film formation may be performed using a chemical vapor deposition (CVD) method, atomic layer deposition (ALD) method, or other film formation methods. The substrate processing apparatus 10 may be a single-wafer type substrate processing apparatus or a batch type substrate processing apparatus.

[0022] The substrate processing apparatus 10 includes a processing vessel 1, a gas supply unit 2, an exhaust system 3, and a control unit 4. The substrate processing apparatus 10 also includes a substrate support unit 11. The substrate support unit 11 supports a substrate W. The substrate support unit 11 is disposed within the processing vessel 1. The processing vessel 1 includes a processing space 12 defined by the ceiling wall, side walls, and substrate support unit 11 of the processing vessel 1. The processing vessel 1 is made of a conductor such as aluminum and is grounded.

[0023] The processing vessel 1 has at least one gas supply port 12d for supplying gas to the processing space 12 and at least one gas exhaust port 12e for exhausting gas from the plasma processing space. A gas supply unit 2 is connected to the gas supply port 12d. An exhaust system 3 is connected to the gas exhaust port. An opening (not shown) is formed in the sidewall of the processing vessel 1 for loading and unloading a substrate W into and from the processing vessel 1. The opening is opened and closed by a gate valve (not shown).

[0024] The exhaust system 3 includes an exhaust line 31 and an exhaust device 32. The exhaust line 31 is connected to the exhaust device 32 and configured to exhaust gases through the exhaust device 32. The exhaust device 32 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve adjusts the pressure in the processing space 12s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0025] The gas supply unit 2 has a first gas supply unit 2a and a second gas supply unit 2b. The first gas supply unit 2a has two supply lines. The two supply lines of the first gas supply unit 2a include a first supply path N1 consisting of supply line 23a0, supply line 23a1, and supply line 23a3, and a second supply path N2 consisting of supply line 23a0, supply line 23a2, and supply line 23a3.

[0026] Supply line 23a0 is connected to source gas supply unit 20a. Supply line 23a0 branches into supply line 23a1 and supply line 23a2 at branch point P1. Supply line 23a1 and supply line 23a2 merge into supply line 23a3 at merge point G1.

[0027] The source gas supplied by the source gas supply unit 20a may be a first source gas. In this case, the first supply path N1 is an example of a first supply line configured to supply the first source gas into the processing vessel 1. The second supply path N2 is an example of a second supply line configured to supply the first source gas into the processing vessel 1. However, the source gas supplied by the source gas supply unit 20a may be a second source gas. In this case, the first supply path N1 is an example of a third supply line configured to supply the second source gas into the processing vessel 1. The second supply path N2 is an example of a fourth supply line configured to supply the second source gas into the processing vessel 1.

[0028] The vent lines connected to the source gas supply unit 20a include a first vent path V1 consisting of a vent line 24a1 and a vent line 24a3, and a second vent path V2 consisting of a vent line 24a2 and a vent line 24a3. The first vent path V1 is connected to the first supply path N1. The second vent path V2 is connected to the second supply path N2. The vent line 24a1 branches off from the supply line 23a1 at a branch point P2. The vent line 24a2 branches off from the supply line 23a2 at a branch point P3. The vent line 24a1 and the vent line 24a2 merge into the vent line 24a3 at a junction G3. The vent line 24a3 is connected to the exhaust line 31.

[0029] The first vent path V1 is an example of a first vent line that connects the first supply line and the exhaust line 31. The second vent path V2 is an example of a second vent line that connects the second supply line and the exhaust line 31.

[0030] The two supply lines of the second gas supply unit 2b include a third supply path N3 consisting of supply line 23b0, supply line 23b1, and supply line 23b3, and a fourth supply path N4 consisting of supply line 23b0, supply line 23b2, and supply line 23b3.

[0031] Supply line 23b0 is connected to source gas supply unit 20b. Supply line 23b0 branches into supply line 23b1 and supply line 23b2 at branch point P4. Supply line 23b1 and supply line 23b2 merge into supply line 23b3 at merge point G2.

[0032] The source gas supplied by the source gas supply unit 20b may be different from the source gas supplied by the source gas supply unit 20a and may be, for example, a second source gas. In this case, the third supply path N3 is an example of a third supply line configured to supply the second source gas into the processing vessel 1. The fourth supply path N4 is an example of a fourth supply line configured to supply the second source gas into the processing vessel 1. However, when the source gas supplied by the source gas supply unit 20a is the second source gas, the source gas supplied by the source gas supply unit 20b may be the first source gas. In this case, the third supply path N3 is an example of a first supply line configured to supply the first source gas into the processing vessel 1. The fourth supply path N4 is an example of a second supply line configured to supply the first source gas into the processing vessel 1.

[0033] The vent lines connected to the source gas supply unit 20b include a third vent path V3 consisting of a vent line 24b1 and a vent line 24b3, and a fourth vent path V4 consisting of a vent line 24b2 and a vent line 24b3. The third vent path V3 is connected to the third supply path N3. The fourth vent path V4 is connected to the fourth supply path N4. The vent line 24b1 branches off from the supply line 23b1 at a branch point P5. The vent line 24b2 branches off from the supply line 23b2 at a branch point P6. The vent line 24b1 and the vent line 24b2 merge into the vent line 24b3 at a junction G4. The vent line 24b3 is connected to the exhaust line 31.

[0034] The third vent path V3 is an example of a third vent line that connects the third supply line and the exhaust line 31. The fourth vent path V4 is an example of a fourth vent line that connects the fourth supply line and the exhaust line 31.

[0035] The source gas supply unit 20a includes a carrier gas supply unit 21a, a first vaporizer 40a, and a first flow rate controller 50a. The carrier gas supply unit 21a is connected to a carrier gas supply line 22a. The carrier gas supply unit 21a supplies N2 gas to the first vaporizer 40a. N2 gas is an example of a carrier gas. The carrier gas is not limited to this, and may be an inert gas such as He gas. The first vaporizer 40a is connected to a supply line 23a0 via the first flow rate controller 50a.

[0036] The first vaporizer 40a has a tank 41a that stores the liquid first source material LA. N2 gas flows through a carrier gas supply line 22a and is supplied to the tank 41a. The first vaporizer 40a vaporizes the first source material LA by heating, and outputs a mixed gas of the vaporized first source gas and N2 gas as a source gas. The first source material LA is not limited to a liquid, and may be a solid.

[0037] The source gas supply unit 20a supplies a source gas through a first supply path N1 or a second supply path N2 into the processing chamber 1. In the following description, Gas A illustrated in FIG. 1 is used as the first source gas.

[0038] The source gas supply unit 20b includes a carrier gas supply unit 21b, a second vaporizer 40b, and a second flow rate controller 50b. The carrier gas supply unit 21b is connected to a carrier gas supply line 22b. The carrier gas supply unit 21b supplies N2 gas to the second vaporizer 40b. N2 gas is an example of a carrier gas. The carrier gas is not limited to this, and may be an inert gas such as He gas.

[0039] The second vaporizer 40b has a tank 41b that stores the liquid second source material LB. N2 gas flows through a carrier gas supply line 22b and is supplied to the tank 41b. The second vaporizer 40b vaporizes the second source material LB by heating, and outputs a mixed gas of the vaporized second source gas and N2 gas as a source gas. The second source material LB is not limited to a liquid, and may be a solid.

[0040] The source gas supply unit 20b supplies the source gas through the third supply path N3 or the fourth supply path N4 into the processing chamber 1. In the following description, Gas B illustrated in FIG. 1 is used as the second source gas.

[0041] The first flow rate controller 50a and the second flow rate controller 50b are mass flow controllers (MFCs), have flow rate adjustment valves, and control the flow rates of the first source gas and the second source gas.

[0042] The first supply path N1 has a first on-off valve 60a on the supply line 23a1 downstream of the branch point P1. The second supply path N2 has a second on-off valve 60b on the supply line 23a2 downstream of the branch point P1. The supply and stop of the supply of the first source gas (GasA) are controlled by opening and closing the first on-off valve 60a and the second on-off valve 60b. Specifically, one of the first on-off valve 60a and the second on-off valve 60b is controlled to be open, and the other is controlled to be closed. As a result, the first source gas is supplied from one of the supply line 23a1 and the supply line 23a2, and the supply of the first source gas to the other of the supply line 23a1 and the supply line 23a2 is stopped.

[0043] The first vent path V1 has a third on-off valve 60c in the vent line 24a1 downstream of the branch point P2. The second vent path V2 has a fourth on-off valve 60d in the vent line 24a2 downstream of the branch point P3. The exhaust and stop of the exhaust of the first source gas are controlled by opening and closing the third on-off valve 60c and the fourth on-off valve 60d. Specifically, one of the third on-off valve 60c and the fourth on-off valve 60d is controlled to be open, and the other is controlled to be closed. As a result, the first source gas is exhausted from one of the supply line 23a1 and the supply line 23a2 via one of the vent line 24a1 and the vent line 24a2, and the exhaust of the first source gas from the other is stopped.

[0044] The third supply path N3 has a fifth on-off valve 60e on the supply line 23b1 downstream of the branch point P4. The fourth supply path N4 has a sixth on-off valve 60f on the supply line 23b2 downstream of the branch point P4. The supply and stop of the supply of the second source gas (Gas B) are controlled by opening and closing the fifth on-off valve 60e and the sixth on-off valve 60f. Specifically, one of the fifth on-off valve 60e and the sixth on-off valve 60f is controlled to be open, and the other is controlled to be closed. As a result, the second source gas is supplied from one of the supply line 23b1 and the supply line 23b2, and the supply of the second source gas to the other is stopped.

[0045] The third vent path V3 has a seventh on-off valve 60g on the vent line 24b1 downstream of the branch point P5. The fourth vent path V4 has an eighth on-off valve 60h on the vent line 24b2 downstream of the branch point P6. The exhaust and stop of the exhaust of the second source gas are controlled by opening and closing the seventh on-off valve 60g and the eighth on-off valve 60h. Specifically, one of the seventh on-off valve 60g and the eighth on-off valve 60h is controlled to be open, and the other is controlled to be closed. As a result, the second source gas is exhausted from one of the supply line 23b1 and the supply line 23b2 via one of the vent line 24b1 and the vent line 24b2, and the exhaust of the second source gas from the other is stopped.

[0046] Furthermore, the first supply path N1 has a ninth on-off valve 61a on the supply line 23a1 upstream of the junction G1. The second supply path N2 has a tenth on-off valve 61b on the supply line 23a2 upstream of the junction G1. Of the ninth on-off valve 61a and the tenth on-off valve 61b, the on-off valve located on the supply line to which the first source gas is supplied is opened, and the on-off valve located on the supply line to which the first source gas is not supplied is closed. This allows the ninth on-off valve 61a and the tenth on-off valve 61b to prevent the first source gas from flowing back into either the supply line 23a1 or the supply line 23a2 when the first source gas flows through the other line. The ninth on-off valve 61a and the tenth on-off valve 61b may be omitted.

[0047] Furthermore, the third supply path N3 has an eleventh on-off valve 61c on the supply line 23b1 upstream of the junction G2. The fourth supply path N4 has a twelfth on-off valve 61d on the supply line 23b2 upstream of the junction G2. Of the eleventh on-off valve 61c and the twelfth on-off valve 61d, the on-off valve located on the supply line to which the second source gas is supplied is opened, and the on-off valve located on the supply line to which the second source gas is not supplied is closed. This allows the eleventh on-off valve 61c and the twelfth on-off valve 61d to prevent the second source gas from flowing back into the other supply line 23b1 or 23b2 when the second source gas flows through one of the supply lines. The eleventh on-off valve 61c and the twelfth on-off valve 61d may be omitted.

[0048] The distance D between the connection position D1 between the vent line 24a3 and the exhaust line 31 and the connection position D2 between the vent line 24b3 and the exhaust line 31 is several tens of centimeters or more. Therefore, the first source gas exhausted from the vent line 24a3 to the exhaust line 31 and the second source gas exhausted from the vent line 24b3 to the exhaust line 31 are not mixed in the exhaust line 31. This allows the substrate processing apparatus 10 to prevent film formation inside the exhaust line 31.

[0049] The purge gas supply unit 70 supplies N2 gas as an example of a purge gas. However, the purge gas is not limited to N2 gas, and may be an inert gas such as Ar gas. The purge gas supply unit 70 is connected to the first supply path N1 to the fourth supply path N4 via the first purge gas path 72a to the fourth purge gas path 72d. The first purge gas path 72a connects the supply line 23a1 to the purge gas supply unit 70. A thirteenth on-off valve 80a is provided in the first purge gas path 72a. The second purge gas path 72b connects the supply line 23a2 to the purge gas supply unit 70. A fourteenth on-off valve 80b is provided in the second purge gas path 72b. The third purge gas path 72c connects the supply line 23b1 to the purge gas supply unit 70. A fifteenth on-off valve 80c is provided in the third purge gas path 72c. The fourth purge gas passage 72d connects the supply line 23b2 and the purge gas supply unit 70. A sixteenth on-off valve 80d is provided on the fourth purge gas passage 72d.

[0050] One of the thirteenth on-off valve 80a and the fourteenth on-off valve 80b is controlled to an open state, and the other is controlled to a closed state. As a result, N2 gas is supplied to one of the supply line 23a1 and the supply line 23a2, and the supply of N2 gas to the other is stopped. In addition, one of the fifteenth on-off valve 80c and the sixteenth on-off valve 80d is controlled to an open state, and the other is controlled to a closed state. As a result, N2 gas is supplied to one of the supply line 23b1 and the supply line 23b2, and the supply of N2 gas to the other is stopped.

[0051] The control unit 4 processes computer-executable instructions that cause the substrate processing apparatus 10 to perform various processes included in the substrate processing method described in this disclosure. The control unit 4 may be configured to control each element of the substrate processing apparatus 10 to perform the various processes described herein. In one embodiment, part or all of the control unit 4 may be included in the substrate processing apparatus 10. The control unit 4 may include a processing unit, a storage unit, and a communication interface. The control unit 4 may be implemented, for example, by a computer. The processing unit reads a program from the storage unit and executes the read program, thereby performing various control operations. The program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The processing unit may be a central processing unit (CPU). The storage unit may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface communicates with the substrate processing apparatus 10 via a communication line such as a LAN (Local Area Network).

[0052] The first raw material LA and the second raw material LB are examples of film-forming raw material monomers. The first raw material LA is an example of a first monomer, such as isocyanate. The second raw material LB is an example of a second monomer, such as amine.

[0053] A first source gas containing a first raw material gas such as isocyanate and a second source gas containing a second raw material gas such as amine are examples of film formation gases. For example, the first source gas containing isocyanate gas and the second source gas containing amine gas are mixed in the processing space 12 to form an organic film of a polymer having a urea bond on the surface of the substrate W supported by the substrate support 11.

[0054] For example, the substrate processing apparatus 10 can produce a linear polyurea by using a diisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. A combination of a diisocyanate and a diamine is, for example, 4,4'-diphenylmethane diisocyanate (MDI) and 1,12-diaminododecane (DAD). A combination of a diisocyanate and a diamine is, for example, 1,3-bis(isocyanatomethyl)cyclohexane (H6XDI) and 1,12-diaminododecane (DAD). A combination of a diisocyanate and a diamine is, for example, 1,3-bis(isocyanatomethyl)cyclohexane (H6XDI) and 1,3-bis(aminomethyl)cyclohexane (H6XDA). Examples of the combination of diisocyanate and diamine include 1,3-bis(isocyanatomethyl)cyclohexane (H6XDI) and hexamethylenediamine (HMDA). Examples of the combination of diisocyanate and diamine include m-xylylenediisocyanate (XDI) and m-xylylenediamine (XDA). Examples of the combination of diisocyanate and diamine include m-xylylenediisocyanate (XDI) and benzylamine (BA).

[0055] For example, the substrate processing apparatus 10 can produce a crosslinkable polyurea by using a diisocyanate as the first monomer and a triamine (e.g., a primary amine) or a tetraamine (e.g., a secondary amine) as the second monomer. The substrate processing apparatus 10 can also produce a trimer having a urea bond by using a monoisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. The substrate processing apparatus 10 can also produce a dimer having a urea bond by using a monoisocyanate as the first monomer and a monoamine (e.g., a primary amine) as the second monomer.

[0056] [Substrate processing method] Next, a substrate processing method according to an embodiment of the present disclosure will be described with reference to Figs. 2 to 5. Fig. 3 is a flowchart showing a substrate processing method according to an embodiment. Fig. 4 is a diagram showing an example of a recipe for simultaneously performing film formation and cleaning. Figs. 2 and 5 are schematic diagrams of a substrate processing apparatus according to an embodiment.

[0057] The substrate processing method may be controlled by the control unit 4 and performed by the substrate processing apparatus 10. Note that the substrate processing apparatus 10 is an example of a substrate processing apparatus that performs the substrate processing method of the present disclosure, and is not limited thereto.

[0058] In the examples of FIGS. 2 and 5, the gases used for film formation are a first source gas (Gas A) consisting of a first raw material gas LA and N2 gas, and a second source gas (Gas B) consisting of a second raw material gas LB and N2 gas.

[0059] First, in step S10, the control unit 4 initializes a variable n relating to the number of steps indicated in the recipe to 0.

[0060] Next, in step S11, the control unit 4 controls the first on-off valve 60a and the fourth on-off valve 60d to an open state, and the second on-off valve 60b and the third on-off valve 60c to a closed state. The control unit 4 also controls the fifth on-off valve 60e and the eighth on-off valve 60h to an open state, and the sixth on-off valve 60f and the seventh on-off valve 60g to a closed state. The control unit 4 also controls the ninth on-off valve 61a and the eleventh on-off valve 61c to an open state, and the tenth on-off valve 61b and the twelfth on-off valve 61d to a closed state.

[0061] Next, in step S12, the control unit 4 controls the fourteenth on-off valve 80b and the sixteenth on-off valve 80d to an open state, and controls the thirteenth on-off valve 80a and the fifteenth on-off valve 80c to a closed state, thereby controlling the on-off states of the first on-off valve 60a to the eighth on-off valve 60h, the ninth on-off valve 61a to the twelfth on-off valve 61d, and the thirteenth on-off valve 80a to the sixteenth on-off valve 80d, as illustrated in FIG.

[0062] By controlling the opening and closing of the above-described on-off valves, in step S13, the control unit 4 supplies the first source gas (Gas A) through the first supply path N1 and the second source gas (Gas B) through the third supply path N3. At the same time, the control unit 4 evacuates the second supply path N2 via the vent line 24a2 and supplies N2 gas from the second purge gas path 72b to the second supply path N2 to purge the second supply path N2. The control unit 4 also evacuates the fourth supply path N4 via the vent line 24b2 and supplies N2 gas from the fourth purge gas path 72d to the fourth supply path N4 to purge the fourth supply path N4. However, the control unit 4 may also purge the second supply path N2 with N2 gas without evacuating the second supply path N2. The control unit 4 may also purge the fourth supply path N4 with N2 gas without evacuating the fourth supply path N4. 4, the substrate processing apparatus 10 can simultaneously form a film using two source gases supplied from the first supply path N1 and the third supply path N3, and clean the second supply path N2 and the fourth supply path N4. The first to fourth steps are film formation steps. However, the recipe steps are not limited to this, and may include steps such as a stabilization step before or after the film formation step.

[0063] Steps S12 and S13 may be performed simultaneously. The order of steps S12 and S13 may be reversed. The supply of the first source gas (Gas A) in steps S11 to S13 is an example of the process (a). The supply of the second source gas (Gas B) in steps S11 to S13 is an example of the process (c). The cleaning of the second supply path N2 and the fourth supply path N4 in steps S11 to S13 is an example of the processes (b) and (d).

[0064] Next, in step S14, the control unit 4 determines whether the (1+n)th step has been completed. Here, n is set to 0. Therefore, the control unit 4 determines whether the first step has been completed. The control unit 4 determines whether the first step has been completed based on the recipe. For example, in the example of FIG. 4, the control unit 4 determines that the first step has been completed when the film formation time T1 of the first step has elapsed. While the control unit 4 determines that the first step has not been completed, it determines "NO" in step S14 and repeats the processes of steps S13 and S14. When the control unit 4 determines that the first step has been completed, it determines "YES" in step S14 and proceeds to step S15.

[0065] In step S15, the control unit 4 controls the second on-off valve 60b and the third on-off valve 60c to an open state, and the first on-off valve 60a and the fourth on-off valve 60d to a closed state. The control unit 4 also controls the sixth on-off valve 60f and the seventh on-off valve 60g to an open state, and the fifth on-off valve 60e and the eighth on-off valve 60h to a closed state. The control unit 4 also controls the tenth on-off valve 61b and the twelfth on-off valve 61d to an open state, and the ninth on-off valve 61a and the eleventh on-off valve 61c to an open state.

[0066] Next, in step S16, the control unit 4 controls the thirteenth on-off valve 80a and the fifteenth on-off valve 80c to an open state, and controls the fourteenth on-off valve 80b and the sixteenth on-off valve 80d to a closed state, thereby controlling the on-off states of the first on-off valve 60a to the eighth on-off valve 60h, the ninth on-off valve 61a to the twelfth on-off valve 61d, and the thirteenth on-off valve 80a to the sixteenth on-off valve 80d, as illustrated in FIG.

[0067] By controlling the opening and closing of the above-described on-off valves, in step S17, the control unit 4 supplies the first source gas (Gas A) from the second supply path N2 and the second source gas (Gas B) from the fourth supply path N4. At the same time, the control unit 4 evacuates the first supply path N1 via the vent line 24a1 and supplies N2 gas from the first purge gas path 72a to the first supply path N1 to purge the first supply path N1. The control unit 4 also evacuates the third supply path N3 via the vent line 24b1 and supplies N2 gas from the third purge gas path 72c to the third supply path N3 to purge the third supply path N3. However, the control unit 4 may also purge the first supply path N1 with N2 gas without evacuating the first supply path N1. The control unit 4 may also purge the third supply path N3 with N2 gas without evacuating the third supply path N3. As a result, as illustrated in the second step of Figure 4, the substrate processing apparatus 10 can simultaneously form a film using two source gases supplied from the second supply path N2 and the fourth supply path N4, and clean the first supply path N1 and the third supply path N3.

[0068] The control unit 4 may perform steps S15 and S16 simultaneously. The order of steps S15 and S16 may be reversed. The supply of the first source gas (GasA) in steps S15 to S17 is an example of the process (a). The supply of the second source gas (GasB) in steps S15 to S17 is an example of the process (c). The cleaning of the first supply path N1 and the third supply path N3 in steps S15 to S17 is an example of the processes (b) and (d).

[0069] Next, in step S18, the control unit 4 determines whether the (2+n)th step has been completed. Here, n is set to 0. Therefore, the control unit 4 determines whether the second step has been completed. The control unit 4 determines whether the second step has been completed based on the recipe. For example, in the example of FIG. 4, the control unit 4 determines that the second step has been completed when the film formation time T2 of the second step has elapsed. While the control unit 4 determines that the second step has not been completed, it determines "NO" in step S18 and repeats the processes of steps S17 and S18. When the control unit 4 determines that the second step has been completed, it determines "YES" in step S18 and proceeds to step S19.

[0070] In step S19, the control unit 4 determines whether there is a next step. The control unit 4 determines whether there is a next step based on the recipe. For example, in the example of FIG. 4, there is a third step following the second step. Therefore, the control unit 4 determines "YES" in step S19 and proceeds to step S20.

[0071] In step S20, the control unit 4 adds 2 to the variable n, and returns to step S11. The control unit 4 executes the processes of steps S11 to S13. As a result, the open / closed states of the open / closed pulses are again controlled to the states shown in the example of FIG.

[0072] In step S14, the control unit 4 determines whether the (1+n)th step has been completed. Here, n is set to 2. Therefore, the control unit 4 determines whether the third step has been completed based on the recipe. When the control unit 4 determines that the third step has been completed, it determines "YES" in step S14 and proceeds to step S15.

[0073] The control unit 4 executes the processes of steps S15 to S17, whereby the open / closed states of the open / closed pulses are again controlled to the states shown in the example of FIG.

[0074] In step S18, the control unit 4 determines whether the (2+n)th step has been completed. Here, n is set to 2. Therefore, the control unit 4 determines whether the fourth step has been completed based on the recipe. When the control unit 4 determines that the fourth step has been completed, it determines "YES" in step S18 and proceeds to step S19.

[0075] In step S19, the control unit 4 determines whether there is a next step. If the control unit 4 determines that there is a next step based on the recipe, it determines "YES" in step S19 and proceeds to step S20. If the control unit 4 determines that there is no next step, it determines "NO" in step S19 and ends the process.

[0076] [effect] A substrate processing apparatus 10 according to an embodiment of the present disclosure has two gas supply lines and a vent line. The vent line is connected to an exhaust line. With this configuration, in a substrate processing method according to an embodiment of the present disclosure, a source gas is supplied into a processing chamber 1 from one of the two gas supply lines to form a film, and the other supply line is evacuated and purged via a vent line connected to the other supply line. This allows the substrate processing apparatus 10 to simultaneously perform film formation on a substrate and cleaning of the supply lines. Therefore, the substrate processing apparatus 10 does not need to add a process for evacuating and purging the supply lines after film formation. As a result, the substrate processing apparatus 10 can reduce particles without reducing throughput. This allows the substrate processing apparatus 10 to improve film formation performance without reducing productivity.

[0077] The supply lines 23a3 and 23b3 cannot be purged. However, the supply lines 23a3 and 23b3 can be heated by installing a heater therein, and are close to the processing vessel 1, so the temperature is unlikely to drop due to heat input from the processing vessel 1, making it difficult for cold spots to form. Furthermore, the supply lines 23a3 and 23b3 account for only a few percent of the total supply line length, and their lengths are short, ranging from a few centimeters to several tens of centimeters. Therefore, the fact that the supply lines 23a3 and 23b3 cannot be purged is unlikely to cause particle generation.

[0078] The substrate processing method according to this embodiment includes (a) supplying a first source gas into the processing vessel 1 from one of a first supply line or a second supply line, and (b) cleaning the other of the first supply line or the second supply line through a first vent line or a second vent line connected to the other of the first supply line or the second supply line.

[0079] For example, the substrate processing method may include (a) supplying a first source gas from one of the first supply line or the second supply line by controlling the first on-off valve 60a and the second on-off valve 60b, and (b) cleaning the other of the first supply line or the second supply line via the first vent line or the second vent line by controlling the third on-off valve 60c and the fourth on-off valve 60d.

[0080] Alternatively, the substrate processing method may be such that a set of the first on-off valve 60a and the fourth on-off valve 60d is defined as a first set, and a set of the second on-off valve 60b and the third on-off valve 60c is defined as a second set, and in (a) and (b), the on-off states of the on-off valves in the same set are controlled to be the same for the first and second sets, and the on-off states of the on-off valves in different sets are controlled to be different. This allows the substrate processing method to supply the first source gas from one of the first supply line or the second supply line to form a film, while simultaneously cleaning the other of the first supply line or the second supply line.

[0081] In the substrate processing method (a) and (b), the open / closed states of the first and second sets of open / close valves may be alternately switched, thereby allowing the first supply line and the second supply line to be alternately cleaned.

[0082] In the substrate processing method, (b) may include alternately flowing a purge gas through the first vent line and the second vent line to alternately clean the first supply line and the second supply line.

[0083] In addition, in (b), the substrate processing method may include alternately exhausting the first source gas through the first vent line and the second vent line, and alternately flowing a purge gas through the first vent line and the second vent line, thereby alternately cleaning the first supply line and the second supply line.

[0084] Furthermore, the substrate processing method according to this embodiment may include (c) supplying a second source gas into the processing vessel from one of the third supply line or the fourth supply line, and (d) cleaning the other of the third supply line or the fourth supply line through a third vent line or a fourth vent line connected to the other of the third supply line or the fourth supply line.

[0085] For example, the substrate processing method may include (c) supplying the second source gas from either the third supply line or the fourth supply line by controlling the fifth on-off valve 60e and the sixth on-off valve 60f, and (d) cleaning the other of the third supply line or the fourth supply line via the third vent line or the fourth vent line by controlling the seventh on-off valve 60g and the eighth on-off valve 60h.

[0086] Alternatively, the substrate processing method may be such that the set of the fifth on-off valve 60e and the eighth on-off valve 60h is a third set, and the set of the sixth on-off valve 60f and the seventh on-off valve 60g is a fourth set, and in (c) and (d), the on-off states of the on-off valves in the same set for the third and fourth sets are controlled to be the same, and the on-off states of the on-off valves in different sets are controlled to be different. This allows the substrate processing method to supply the second source gas from one of the first supply line or the second supply line to form a film, while simultaneously cleaning the other of the first supply line or the second supply line.

[0087] In the substrate processing method, in steps (c) and (d), the open / closed states of the third and fourth sets of open / close valves may be alternately switched, thereby enabling the third supply line and the fourth supply line to be alternately cleaned.

[0088] In the substrate processing method, in (d), the purge gas is alternately caused to flow through the third vent line and the fourth vent line, thereby alternately cleaning the third supply line and the fourth supply line.

[0089] In addition, in (d), the substrate processing method can alternately clean the third supply line and the fourth supply line by alternately exhausting the second source gas through the third vent line and the fourth vent line and alternately flowing the purge gas through the third vent line and the fourth vent line.

[0090] The substrate processing method may perform (a) and (b) in parallel. For example, the substrate processing method may perform (a) and (b) simultaneously. However, the substrate processing method is not limited to performing (a) and (b) completely simultaneously, and may perform parts of (a) and (b) in parallel. For example, the substrate processing method may perform intermediate processing of (a) and (b) simultaneously, and start or end the initial or final processing of (a) and (b) at different times.

[0091] The substrate processing method may perform (c) and (d) in parallel. For example, the substrate processing method may perform (c) and (d) simultaneously. However, the substrate processing method is not limited to performing (c) and (d) completely simultaneously, and may perform part of them in parallel. For example, the substrate processing method may perform intermediate processing of (c) and (d) simultaneously, and the first or last processing of (c) and (d) may start or end at different times.

[0092] The embodiment has been described above. As described above, the substrate processing method in the embodiment includes steps (a) and (b). In step (a), a first source gas is supplied into the processing chamber from one of a first supply line or a second supply line. In step (b), the other of the first supply line or the second supply line is cleaned via a first vent line or a second vent line connected to the other of the first supply line or the second supply line.

[0093] Furthermore, the substrate processing apparatus 10 in this embodiment includes a processing chamber 1, a first supply line, a second supply line, an exhaust line 31, a first vent line, a second vent line, and a controller 4. The first supply line and the second supply line supply a first source gas into the processing chamber. The exhaust line 31 exhausts the gas. The first vent line connects the first supply line to the exhaust line 31. The second vent line connects the second supply line to the exhaust line 31. The controller 4 controls steps including (a) and (b).

[0094] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0095] For example, although the example in which the gas supply unit 2 has the first gas supply unit 2 a and the second gas supply unit 2 b has been shown, the gas supply unit 2 may have at least either the first gas supply unit 2 a or the second gas supply unit 2 b. Furthermore, the gas supply unit 2 is not limited to this, and may have three or more gas supply units.

[0096] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment. (Appendix 1) A processing vessel; a first supply line configured to supply a first source gas into the interior of the process vessel; a second supply line configured to supply a first source gas into the interior of the process vessel; an exhaust line configured to exhaust the gas; a first vent line connecting the first supply line and the exhaust line; a second vent line connecting the second supply line and the exhaust line; A substrate processing method performed in a substrate processing apparatus comprising: (a) supplying the first source gas into the processing chamber through one of the first supply line and the second supply line; (b) cleaning the other of the first supply line or the second supply line through the first vent line or the second vent line connected to the other of the first supply line or the second supply line; A substrate processing method comprising: (Appendix 2) (a) and (b) are carried out in parallel; 2. The substrate processing method of claim 1. (Appendix 3) a first opening / closing valve provided in the first supply line; a second opening / closing valve provided in the second supply line; a third on-off valve provided in the first vent line; a fourth on-off valve provided in the second vent line, In the step (a), the first source gas is supplied from one of the first supply line and the second supply line by controlling the first on-off valve and the second on-off valve; In the step (b), the other of the first supply line and the second supply line is cleaned via the first vent line or the second vent line by controlling the third on-off valve and the fourth on-off valve. 3. The substrate processing method according to claim 1 or 2. (Appendix 4) A set of the first on-off valve and the fourth on-off valve is a first set, and a set of the second on-off valve and the third on-off valve is a second set, In (a) and (b), the first and second sets are controlled so that the opening and closing states of the opening and closing valves in the same set are the same, and the opening and closing states of the opening and closing valves in different sets are controlled so that they are different. 4. The substrate processing method of claim 3. (Appendix 5) In the steps (a) and (b), the first supply line and the second supply line are alternately cleaned by alternately switching the open / close states of the first and second sets of open / close valves. 5. The substrate processing method according to claim 4. (Appendix 6) In the step (b), a purge gas is alternately flowed through the first vent line and the second vent line to alternately clean the first supply line and the second supply line. 6. A substrate processing method according to claim 5. (Appendix 7) In the step (b), the first source gas is alternately exhausted through the first vent line and the second vent line, and a purge gas is alternately flowed through the first vent line and the second vent line, thereby alternately cleaning the first supply line and the second supply line. 6. A substrate processing method according to claim 5. (Appendix 8) a third supply line configured to supply a second source gas into the interior of the processing vessel; a fourth supply line configured to supply a second source gas into the interior of the processing vessel; a third vent line connecting the third supply line and the exhaust line; a fourth vent line connecting the fourth supply line and the exhaust line; Equipped with (c) supplying the second source gas into the processing chamber through one of the third supply line and the fourth supply line; (d) cleaning the other of the third supply line or the fourth supply line through the third vent line or the fourth vent line connected to the other of the third supply line or the fourth supply line; 8. The substrate processing method according to any one of claims 1 to 7, further comprising: (Appendix 9) (c) and (d) are carried out in parallel; 9. The substrate processing method according to claim 8. (Appendix 10) a fifth on-off valve provided in the third supply line; a sixth on-off valve provided in the fourth supply line; a seventh on-off valve provided in the third vent line; an eighth on-off valve provided in the fourth vent line; In the step (c), the second source gas is supplied from one of the third supply line and the fourth supply line by controlling the fifth on-off valve and the sixth on-off valve; In the step (d), the other of the third supply line and the fourth supply line is cleaned via the third vent line or the fourth vent line by controlling the seventh on-off valve and the eighth on-off valve. 10. The substrate processing method according to claim 8 or 9. (Appendix 11) A set of the fifth on-off valve and the eighth on-off valve is a third set, and a set of the sixth on-off valve and the seventh on-off valve is a fourth set, In (c) and (d), the open / close states of the open / close valves in the third and fourth sets are controlled to be the same, and the open / close states of the open / close valves in different sets are controlled to be different. 11. The substrate processing method according to claim 10. (Appendix 12) In the steps (c) and (d), the third supply line and the fourth supply line are alternately cleaned by alternately switching the open / close states of the third and fourth sets of open / close valves. 12. The substrate processing method according to claim 11. (Appendix 13) In the step (d), a purge gas is alternately flowed through the third vent line and the fourth vent line to alternately clean the third supply line and the fourth supply line. 13. The substrate processing method of claim 12. (Appendix 14) In the step (d), the second source gas is alternately exhausted through the third vent line and the fourth vent line, and a purge gas is alternately flowed through the third vent line and the fourth vent line, thereby alternately cleaning the third supply line and the fourth supply line. 13. The substrate processing method of claim 12. (Appendix 15) A processing vessel; a first supply line configured to supply a first source gas into the interior of the process vessel; a second supply line configured to supply a first source gas into the interior of the process vessel; an exhaust line configured to exhaust the gas; a first vent line connecting the first supply line and the exhaust line; a second vent line connecting the second supply line and the exhaust line; a control unit, The control unit (a) supplying the first source gas into the processing chamber through one of the first supply line and the second supply line; (b) cleaning the other of the first supply line or the second supply line through a first vent line or a second vent line connected to the other of the first supply line or the second supply line; A substrate processing apparatus that controls a process including: [Explanation of symbols]

[0097] 1: Processing container 2: Gas supply section 2a: First gas supply unit 2b: Second gas supply section 3: Exhaust system 4: Control section 10: Substrate processing equipment 11: Substrate support part 23a0-23a3, 23b0-23b3: Supply lines 24a1~24a3, 24b1~24b3: Vent line 31: Exhaust line 40a: First vaporizer 40b: Second vaporizer 50a: First flow rate controller 50b: 2nd flow controller 72a: First purge gas path 72b: Second purge gas path 72c: Third purge gas path 72d: Fourth purge gas path N1: First supply route N2: Second supply route N3: Third supply route N4: 4th supply route V1: First vent route V2: Second vent route V3: Third vent route V4: 4th vent route

Claims

1. A processing vessel; a first supply line configured to supply a first source gas into the interior of the processing vessel; a second supply line configured to supply a first source gas into the interior of the processing vessel; an exhaust line configured to exhaust the gas; a first vent line connecting the first supply line and the exhaust line; a second vent line connecting the second supply line and the exhaust line; A substrate processing method performed in a substrate processing apparatus comprising: (a) supplying the first source gas into the processing chamber through one of the first supply line and the second supply line; (b) cleaning the other of the first supply line or the second supply line via the first vent line or the second vent line connected to the other of the first supply line or the second supply line; A substrate processing method comprising:

2. (a) and (b) are carried out in parallel; The substrate processing method according to claim 1 .

3. a first opening / closing valve provided in the first supply line; a second opening / closing valve provided in the second supply line; a third on-off valve provided in the first vent line; a fourth on-off valve provided in the second vent line, In the step (a), the first source gas is supplied from one of the first supply line and the second supply line by controlling the first on-off valve and the second on-off valve; In the step (b), the other of the first supply line and the second supply line is cleaned via the first vent line or the second vent line by controlling the third on-off valve and the fourth on-off valve.

3. The substrate processing method according to claim 1.

4. a pair of the first on-off valve and the fourth on-off valve is a first pair, and a pair of the second on-off valve and the third on-off valve is a second pair, In (a) and (b), the first and second sets are controlled so that the opening and closing states of the opening and closing valves in the same set are the same, and the opening and closing states of the opening and closing valves in different sets are controlled so that they are different. The substrate processing method according to claim 3 .

5. In the steps (a) and (b), the first supply line and the second supply line are alternately cleaned by alternately switching the open / closed states of the first and second sets of open / close valves. The substrate processing method according to claim 4 .

6. In the step (b), a purge gas is alternately flowed through the first vent line and the second vent line to alternately clean the first supply line and the second supply line. The substrate processing method according to claim 5 .

7. In the step (b), the first source gas is alternately exhausted through the first vent line and the second vent line, and a purge gas is alternately flowed through the first vent line and the second vent line, thereby alternately cleaning the first supply line and the second supply line. The substrate processing method according to claim 5 .

8. a third supply line configured to supply a second source gas into the interior of the processing vessel; a fourth supply line configured to supply a second source gas into the interior of the processing vessel; a third vent line connecting the third supply line and the exhaust line; a fourth vent line connecting the fourth supply line and the exhaust line; Equipped with (c) supplying the second source gas into the processing chamber through one of the third supply line and the fourth supply line; (d) cleaning the other of the third supply line or the fourth supply line via the third vent line or the fourth vent line connected to the other of the third supply line or the fourth supply line; The substrate processing method of claim 1 , further comprising:

9. (c) and (d) are carried out in parallel; The substrate processing method according to claim 8 .

10. a fifth on-off valve provided in the third supply line; a sixth opening / closing valve provided in the fourth supply line; a seventh on-off valve provided in the third vent line; an eighth on-off valve provided in the fourth vent line; In the step (c), the second source gas is supplied from one of the third supply line and the fourth supply line by controlling the fifth on-off valve and the sixth on-off valve; In the step (d), the other of the third supply line and the fourth supply line is cleaned via the third vent line or the fourth vent line by controlling the seventh on-off valve and the eighth on-off valve. The substrate processing method according to claim 8 .

11. a set of the fifth on-off valve and the eighth on-off valve is a third set, a set of the sixth on-off valve and the seventh on-off valve is a fourth set, In the (c) and (d), the open / close states of the open / close valves in the same group are controlled to be the same for the third group and the fourth group, and the open / close states of the open / close valves in different groups are controlled to be different for the third group and the fourth group. The substrate processing method according to claim 10.

12. In the steps (c) and (d), the third supply line and the fourth supply line are alternately cleaned by alternately switching the open / close states of the third and fourth sets of open / close valves. The substrate processing method according to claim 11 .

13. In the step (d), a purge gas is alternately flowed through the third vent line and the fourth vent line to alternately clean the third supply line and the fourth supply line. The substrate processing method according to claim 12.

14. In the step (d), the second source gas is alternately exhausted through the third vent line and the fourth vent line, and a purge gas is alternately flowed through the third vent line and the fourth vent line, thereby alternately cleaning the third supply line and the fourth supply line. The substrate processing method according to claim 13.

15. A processing vessel; a first supply line configured to supply a first source gas into the interior of the processing vessel; a second supply line configured to supply a first source gas into the interior of the processing vessel; an exhaust line configured to exhaust the gas; a first vent line connecting the first supply line and the exhaust line; a second vent line connecting the second supply line and the exhaust line; a control unit, The control unit (a) supplying the first source gas into the processing chamber through one of the first supply line and the second supply line; (b) cleaning the other of the first supply line or the second supply line through a first vent line or a second vent line connected to the other of the first supply line or the second supply line; A substrate processing apparatus that controls a process including:

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