Pressure sensor

Abstract

To provide a pressure sensor capable of suppressing the decrease in reliability.SOLUTION: A pressure sensor includes: a first detection region including a first transistor, a first detection electrode electrically connected to the first transistor, and a first pressure-sensitive layer disposed on the first detection electrode; a second detection region including a second transistor, a second detection electrode electrically connected to the second transistor, and a second pressure-sensitive layer disposed on the second detection electrode; and a partition wall disposed between the first pressure-sensitive layer and the second pressure-sensitive layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION An embodiment of the present invention relates to a pressure sensor. [Background technology]

[0002] Various pressure sensors capable of detecting pressure distribution have been proposed, but there is a demand for such pressure sensors that can suppress deterioration in reliability. Summary of the Invention [Problem to be solved by the invention]

[0003] An object of this embodiment is to provide a pressure sensor capable of suppressing a decrease in reliability. [Means for solving the problem]

[0004] According to one embodiment, the pressure sensor includes a plurality of first detection regions each including a first transistor, a first detection electrode electrically connected to the first transistor, and a first pressure-sensitive layer disposed on the first detection electrode; a plurality of second detection regions each including a second transistor, a second detection electrode electrically connected to the second transistor, and a second pressure-sensitive layer disposed on the second detection electrode; and a partition disposed between the first pressure-sensitive layer and the second pressure-sensitive layer. [Brief explanation of the drawings]

[0005] [Figure 1] FIG. 1 is a plan view showing an example of the configuration of a pressure sensor according to the first embodiment. [Figure 2] FIG. 2 is a plan view showing an example of the configuration of the pressure sensor shown in FIG. [Figure 3] FIG. 3 is a schematic cross-sectional view of the pressure sensor taken along line III-III in FIG. [Figure 4] FIG. 4 is a circuit diagram showing an example of the circuit configuration of the pressure sensor shown in FIG. [Figure 5]FIG. 5 is a cross-sectional view for explaining a state in which the input surface of the pressure sensor shown in FIG. 1 is pressed. [Figure 6] FIG. 6 is a plan view showing an example of the configuration of the pressure sensor according to the second embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view of the pressure sensor taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a plan view showing an example of the configuration of the pressure sensor according to the third embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view of the pressure sensor taken along line IX-IX in FIG. [Figure 10] FIG. 10 is a plan view showing an example of the configuration of the detection section of the pressure sensor shown in FIG. [Figure 11] FIG. 11 is a plan view showing an example of the configuration of the detection section of the pressure sensor shown in FIG. [Figure 12] FIG. 12 is a plan view showing an example of the configuration of the detection section of the pressure sensor shown in FIG. [Figure 13] FIG. 13 is a plan view showing an example of the configuration of the detection section of the pressure sensor shown in FIG. [Figure 14] FIG. 14 is a diagram showing an example of the relationship between the pressure applied to the input surface and the current value. [Figure 15] FIG. 15 is a plan view showing an example of the configuration of the detection section of the pressure sensor shown in FIG. [Figure 16] FIG. 16 is a plan view showing an example of the configuration of the detection section of the pressure sensor shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0006] The present embodiment will be described below with reference to the drawings. The disclosure is merely an example, and appropriate modifications that a person skilled in the art can easily make while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment for clarity of explanation, but these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each drawing, components that perform the same or similar functions as those described above with reference to the previous drawings are designated by the same reference numerals, and redundant detailed descriptions may be omitted as appropriate.

[0007] FIG. 1 is a plan view showing an example of the configuration of a pressure sensor 1 according to this embodiment. In one example, the first direction X, the second direction Y, and the third direction Z are perpendicular to one another, but they may intersect at an angle other than 90 degrees. The first direction X and the second direction Y correspond to directions parallel to the main surface of the substrate constituting the pressure sensor 1, and the third direction Z corresponds to the thickness direction of the pressure sensor 1. In this specification, the direction from the substrate 10 toward the protective layer 90 is referred to as the "upper side" (or simply "up"), and the direction from the protective layer 90 toward the substrate 10 is referred to as the "lower side" (or simply "lower"). When referring to a "second member above a first member" and a "second member below a first member," the second member may be in contact with the first member or may be spaced apart from the first member. Furthermore, the observation position for observing the pressure sensor 1 is assumed to be at the tip of the arrow indicating the third direction Z. Looking from this observation position toward the XY plane defined by the first direction X and the second direction Y is referred to as a planar view.

[0008] In this embodiment, the pressure sensor 1 is a pressure distribution sensor. The pressure sensor 1 includes a substrate 10. The substrate 10 is formed in a flat plate shape parallel to the XY plane. The substrate 10 has, for example, a rectangular shape in a plan view.

[0009] 1, the pressure sensor 1 includes a protective layer 90. The protective layer 90 is formed in the shape of a flat plate parallel to the XY plane. The substrate 10 and the protective layer 90 overlap each other in plan view.

[0010] The pressure sensor 1 has an input surface 1a on one side thereof to which pressure is applied. In the example shown in Fig. 1, the pressure sensor 1 has the input surface 1a on the surface of the protective layer 90 opposite to the surface facing the substrate 10. The pressure sensor 1 detects the pressure applied to the input surface 1a.

[0011] In a plan view, the input surface 1a includes a detection section 2 that detects pressure and a frame-shaped non-detection section 3 that surrounds the detection section 2. The detection section 2 includes a plurality of detection regions R. In the example shown in FIG. 1, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y.

[0012] The pressure sensor 1 further includes a connection portion 4, a gate line driving circuit 5, a signal line selection circuit 6, and a common wiring 7. The pressure sensor 1 also includes gate lines 8 and signal lines 9 (not shown). The connection portion 4, the gate line driving circuit 5, the signal line selection circuit 6, the common wiring 7, the gate lines 8, and the signal lines 9 are provided between a substrate 10 and a protective layer 90. The connection portion 4, the gate line driving circuit 5, the signal line selection circuit 6, and the common wiring 7 each overlap the non-detection portion 3 in a plan view.

[0013] The connecting portion 4 is for connecting the pressure sensor 1 to a driving IC (Integrated Circuit) (not shown) arranged outside the pressure sensor 1. The driving IC may be mounted as a COF (Chip On Film) on a flexible printed circuit board or a rigid board connected to the connecting portion 4. The driving IC may also be mounted as a COG (Chip On Glass) in an area of ​​the substrate 10 that overlaps with the non-detection portion 3.

[0014] The gate line driving circuit 5 is a circuit that drives the multiple gate lines 8 based on various control signals from the driving IC. The gate line driving circuit 5 selects the multiple gate lines 8 sequentially or simultaneously, and supplies gate driving signals to the selected gate lines 8.

[0015] The signal line selection circuit 6 is a switch circuit that sequentially or simultaneously selects multiple signal lines 9. The signal line selection circuit 6 is, for example, a multiplexer. The signal line selection circuit 6 connects the selected signal line 9 to the driving IC based on a selection signal supplied from the driving IC.

[0016] The common wiring 7 is a wiring for supplying a predetermined voltage to the common electrode, and is arranged along the outer edge 3a of the non-detection portion 3. The common wiring 7 is connected to the driving IC via the connection portion 4, and a constant voltage is supplied from the driving IC to the common wiring 7.

[0017] Fig. 2 is a plan view showing an example of the configuration of the pressure sensor 1 shown in Fig. 1. Here, a description will be given of the detection section 2 of the pressure sensor 1. In Fig. 2, the protective layer 90 is omitted.

[0018] The pressure sensor 1 includes a plurality of detection regions R and a partition wall 80. In the example shown in Fig. 2, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y.

[0019] Each of the multiple detection regions R includes a detection electrode 50, a common electrode 60, a pressure-sensitive layer 70, and a transistor 30 (not shown). The detection electrode 50 includes one electrode 50a extending in the second direction Y and multiple electrodes 50b extending from the electrode 50a in the first direction X. The common electrode 60 includes one electrode 60a extending in the second direction Y and multiple electrodes 60b extending from the electrode 60a in the first direction X. The electrodes 50b and the electrodes 60b are arranged alternately in the second direction Y. The pressure-sensitive layer 70 overlaps the detection electrode 50 and the common electrode 60. The pressure-sensitive layer 70 has, for example, a rectangular shape.

[0020] The partition walls 80 are arranged between two pressure-sensitive layers 70 adjacent to each other in the first direction X or the second direction Y. In the example shown in FIG. 2 , the partition walls 80 include a plurality of first partition walls 80a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second partition walls 80b arranged side by side in the second direction Y and extending in the first direction X. Two first partition walls 80a are arranged between the pressure-sensitive layers 70 adjacent to each other in the first direction X. Two second partition walls 80b are arranged between the pressure-sensitive layers 70 adjacent to each other in the second direction Y. The intersecting first partition walls 80a and second partition walls 80b are connected to each other. As a result, the partition walls 80 are formed in a lattice shape as a whole, surrounding each of the plurality of pressure-sensitive layers 70.

[0021] In the example shown in FIG. 2, the partition 80 has a plurality of openings AP1 that overlap the pressure-sensitive layer 70. The partition 80 also has a plurality of openings AP2 that do not overlap the pressure-sensitive layer 70. In the example shown in FIG. 2, the openings AP1 have a rectangular shape and are the same size as the pressure-sensitive layer 70. The partition 80 has a row in which the openings AP1 and the openings AP2 are alternately arranged in the first direction X, and a row in which the plurality of openings AP2 are repeatedly arranged in the first direction X. These rows are alternately arranged in the second direction Y. The partition 80 has a row in which the openings AP1 and the openings AP2 are alternately arranged in the second direction Y, and a row in which the plurality of openings AP2 are repeatedly arranged in the second direction Y. These rows are alternately arranged in the first direction X.

[0022] FIG. 3 is a schematic cross-sectional view of the pressure sensor 1 taken along line III-III in FIG. The pressure sensor 1 includes a substrate 10, an insulating layer 20, a plurality of transistors 30, an insulating layer 40, a plurality of detection electrodes 50, a plurality of common electrodes 60, a plurality of pressure-sensitive layers 70, a partition wall 80, and a protective layer 90. The pressure sensor 1 further includes a connection portion 4, a gate line driving circuit 5, a signal line selection circuit 6, and a common wiring 7 shown in FIG. 1. The pressure sensor 1 further includes a gate line 8 and a signal line 9 shown in FIG. 2.

[0023] The substrate 10 has a main surface (lower surface) 10A and a main surface (upper surface) 10B opposite the main surface 10A. The main surfaces 10A and 10B are substantially parallel to the XY plane. An insulating layer 20 covers the main surface 10B. Each of the plurality of transistors 30 is disposed on the insulating layer 20 for each detection region R.

[0024] The transistor 30 includes a semiconductor layer 30a, a gate insulating film 30b, a gate electrode 30c, a drain electrode 30d, and a source electrode 30e. The semiconductor layer 30a is disposed on the insulating layer 20. The gate insulating film 30b is disposed on the semiconductor layer 30a. The gate electrode 30c is disposed on the gate insulating film 30b. The drain electrode 30d is disposed on the semiconductor layer 30a. The drain electrode 30d is electrically connected to a gate line 8 (not shown). The source electrode 30e is disposed on the semiconductor layer 30a. The source electrode 30e is electrically connected to a signal line 9 (not shown).

[0025] The insulating layer 40 covers the insulating layer 20 and each of the plurality of transistors 30. The insulating layer 40 has a surface 40B facing the protective layer 90. The surface 40B is planarized. Although not shown, the connection portion 4, the gate line driving circuit 5, the signal line selection circuit 6, the common wiring 7, the gate lines 8, and the signal lines 9 are provided between the main surface 10B and the surface 40B.

[0026] Each of the multiple detection electrodes 50 is arranged on the surface 40B for each detection region R. The detection electrode 50 is electrically connected to the drain electrode 30d and electrically connected to the transistor 30. Each of the multiple common electrodes 60 is arranged on the surface 40B for each detection region R. In the detection region R, the detection electrode 50 and the common electrode 60 are adjacent to each other with the pressure-sensitive layer 70 interposed therebetween. The detection electrode 50 and the common electrode 60 are arranged on the same plane. In other words, the pressure sensor 1 has so-called parallel electrodes.

[0027] Each of the multiple pressure-sensitive layers 70 is formed for each detection region R. The pressure-sensitive layer 70 covers the detection electrode 50 and the common electrode 60. The pressure-sensitive layer 70 is in contact with the surface 40B between the detection electrode 50 and the common electrode 60. The pressure-sensitive layer 70 is in contact with the surface 40B between the detection electrode 50 and the partition wall 80, and between the common electrode 60 and the partition wall 80.

[0028] The partition walls 80 are disposed on the surface 40B. In the example shown in FIG. 3, two first partition walls 80a are disposed on the surface 40B between adjacent pressure-sensitive layers 70. Each of the first partition walls 80a has a side surface 81S facing the pressure-sensitive layer 70 and a side surface 82S opposite the side surface 81S. The side surface 81S is in contact with the pressure-sensitive layer 70. The side surface 81S faces the side surface 81S of another first partition wall 80a with the pressure-sensitive layer 70 interposed therebetween. An opening AP1 is formed between the opposing side surfaces 81S. The detection electrode 50, the common electrode 60, and the pressure-sensitive layer 70 are disposed in the opening AP1.

[0029] The side surface 82S faces the side surface 82S of another first partition 80a via a gap S. An opening AP2 is formed between the facing side surfaces 82S. The surface 40B is exposed through the opening AP2.

[0030] The protective layer 90 covers each of the pressure-sensitive layers 70 and the partition walls 80. In the example shown in Fig. 3, the protective layer 90 covers the entire surface of the pressure sensor 1. The protective layer 90 has an input surface 1a on the surface opposite to the surface facing the substrate 10.

[0031] The substrate 10 is an insulating substrate. The substrate 10 is, for example, a substrate or film made of glass or a resin such as polyimide (PI). The insulating layers 20 and 40 are inorganic or organic insulating films. The partition wall 80 is, for example, made of an insulating material such as an acrylic resin or an epoxy resin. The protective layer 90 is an insulating and flexible substrate. The protective layer 90 is, for example, a substrate or film made of a resin. The detection electrode 50 and the common electrode 60 are, for example, electrodes made of a metal material such as indium tin oxide (ITO).

[0032] The pressure-sensitive layer 70 is formed of an insulating resin containing a conductive material. The conductive material is, for example, fine particles having conductivity. The conductive material is dispersed in the insulating resin and is spaced apart from one another. The pressure-sensitive layer 70 is, for example, a conductive elastomer in which a conductive material is mixed with a rubber material. The pressure-sensitive layer 70 may be formed, for example, by applying an insulating resin material containing a conductive material onto the surface 40B using an inkjet printer or the like. The pressure-sensitive layer 70 may be composed of two or more types of pressure-sensitive layers that differ in the change in resistance value in response to a change in pressure.

[0033] A pressure-sensitive layer 70 formed from an insulating resin containing such conductive materials has a high resistance value when no pressure is applied because the conductive materials contained in the insulating resin are separated from each other. When pressure is applied to the pressure-sensitive layer 70, the insulating resin deforms, causing the conductive materials contained in the insulating resin to come into contact with or approach each other, thereby reducing the resistance value of the pressure-sensitive layer 70. When further pressure is applied to the pressure-sensitive layer 70 and the amount of deformation of the insulating resin increases, the amount of conductive materials that come into contact with or approach each other increases, further reducing the resistance value of the pressure-sensitive layer 70. In this way, the resistance value of the pressure-sensitive layer 70 formed from an insulating resin containing conductive materials changes in response to changes in pressure.

[0034] Fig. 4 is a circuit diagram showing an example of the circuit configuration of the pressure sensor 1 shown in Fig. 1. As shown in Fig. 4, the gate electrode 30c is electrically connected to the gate line 8. Furthermore, the source electrode 30e is electrically connected to the signal line 9. In other words, each of the transistors 30 is electrically connected to the gate line 8 and the signal line 9.

[0035] The gate lines 8 extend in the first direction X and are electrically connected to each of the transistors 30 in the plurality of detection regions R aligned in the first direction X. The signal lines 9 extend in the second direction Y, intersect with the gate lines 8, and are electrically connected to each of the transistors 30 in the plurality of detection regions R aligned in the second direction Y. The detection electrode 50 is electrically connected to the drain electrode 30d.

[0036] When the gate line 8 is scanned, the detection electrode 50 and the signal line 9 are electrically connected. As a result, the value of the current flowing between the detection electrode 50 and the common electrode 60 can be obtained via the signal line 9. From the obtained current value, the pressure applied to the input surface 1a can be detected.

[0037] 5 is a cross-sectional view for explaining a state in which the input surface 1a of the pressure sensor 1 is pressed. In FIG. 5, the transistor 30 is omitted.

[0038] In the detection region R, the detection electrode 50 and the common electrode 60 are adjacent to each other with the pressure-sensitive layer 70 interposed therebetween. When the input surface 1a of the pressure sensor 1 is not pressed, the pressure-sensitive layer 70 has a large resistance value. Therefore, when the input surface 1a is not pressed, the detection electrode 50 and the common electrode 60 are not electrically connected.

[0039] 5, when the input surface 1a is pressed by, for example, a finger, pressure is applied to the input surface 1a in the direction from the protective layer 90 toward the substrate 10, i.e., in the direction A1. At this time, in the detection region R, the pressure-sensitive layer 70 is compressed in the direction A1, and the conductive materials contained in the pressure-sensitive layer 70 come into contact with or come close to each other, reducing the resistance value of the pressure-sensitive layer 70. As a result, a current flows between the detection electrode 50 and the common electrode 60 via the pressure-sensitive layer 70.

[0040] As the pressure applied to the input surface 1a in the A1 direction increases, the pressure-sensitive layer 70 is further compressed in the A1 direction, and the amount of conductive material in contact with or close to each other increases. This further reduces the resistance of the pressure-sensitive layer 70, and the current flowing between the detection electrode 50 and the common electrode 60 via the pressure-sensitive layer 70 increases. In other words, as the pressure applied to the input surface 1a increases, the value of the current flowing between the detection electrode 50 and the common electrode 60 via the pressure-sensitive layer 70 increases. By detecting such changes in the current value, it is possible to detect changes in the pressure applied to the input surface 1a.

[0041] According to this embodiment, it is possible to provide a pressure sensor capable of suppressing a decrease in reliability. In manufacturing a pressure sensor, for example, when forming a pressure-sensitive layer by applying a pressure-sensitive layer material to a desired location using inkjet printing or printing, the pressure-sensitive layer material may be applied to an undesired location depending on the accuracy of the application. Furthermore, depending on the viscosity of the pressure-sensitive layer material, the pressure-sensitive layer material may spread before hardening, causing the pressure-sensitive layer material to be applied to an undesired location or changing the thickness of the pressure-sensitive layer. This may reduce the reliability of the pressure sensor.

[0042] The pressure sensor 1 shown in FIGS. 2 and 3 includes a plurality of detection regions R. Each of the plurality of detection regions R includes a pressure-sensitive layer 70. A partition wall 80 is disposed between two adjacent pressure-sensitive layers 70. This prevents the pressure-sensitive layer material from being applied to unnecessary locations during the manufacture of the pressure sensor 1. It also prevents the applied pressure-sensitive layer material from spreading.

[0043] Therefore, according to this embodiment, it is possible to provide a pressure sensor capable of suppressing a decrease in reliability.

[0044] (Second embodiment) Fig. 6 is a plan view showing an example of the configuration of a pressure sensor 1 according to the second embodiment. The description above is used to omit the description of the same configuration as in the first embodiment. Here, the detection unit 2 of the pressure sensor 1 will be described. In Fig. 6, the protective layer 90 is omitted.

[0045] The pressure sensor 1 includes a plurality of detection regions R, a partition wall 80, and a common electrode 60 (not shown). In the example shown in Fig. 6, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y.

[0046] Each of the multiple detection regions R includes a detection electrode 50, a pressure-sensitive layer 70, and a transistor 30 (not shown). The pressure-sensitive layer 70 overlaps the detection electrode 50. In the example shown in FIG. 6, the pressure-sensitive layer 70 has a rectangular shape with the same size as the detection electrode 50, but this is not limiting, and the pressure-sensitive layer 70 may have an area smaller than the detection electrode 50.

[0047] In the example shown in FIG. 6 , the partition wall 80 includes a plurality of first partition walls 80a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second partition walls 80b arranged side by side in the second direction Y and extending in the first direction X. Two first partition walls 80a are arranged between adjacent pressure-sensitive layers 70 in the first direction X. Two second partition walls 80b are arranged between adjacent pressure-sensitive layers 70 in the second direction Y. The intersecting first partition walls 80a and second partition walls 80b are connected to each other. As a result, the partition wall 80 is formed in a lattice shape surrounding each of the plurality of pressure-sensitive layers 70. The partition wall 80 includes a plurality of openings AP1 overlapping the pressure-sensitive layers 70. The partition wall 80 further includes a plurality of openings AP2 not overlapping the pressure-sensitive layers 70. In the example shown in FIG. 6 , the openings AP1 have a rectangular shape the same size as the pressure-sensitive layers 70.

[0048] Fig. 7 is a schematic cross-sectional view of the pressure sensor 1 taken along line VII-VII in Fig. 6. The description of the same configuration as in the first embodiment will be omitted, as the above description is used.

[0049] The pressure sensor 1 includes a substrate 10, an insulating layer 20, a plurality of transistors 30, an insulating layer 40, a plurality of detection electrodes 50, a common electrode 60, a plurality of pressure-sensitive layers 70, a partition wall 80, and a protective layer 90.

[0050] Each of the plurality of detection electrodes 50 is disposed on the surface 40B for each detection region R. Each of the plurality of pressure-sensitive layers 70 is formed for each detection region R. The pressure-sensitive layer 70 is disposed on the detection electrode 50 and covers the detection electrode 50.

[0051] The partition walls 80 are disposed on the surface 40B. In the example shown in FIG. 7, two first partition walls 80a are disposed on the surface 40B between adjacent pressure-sensitive layers 70. Each of the first partition walls 80a has a side surface 81S facing the pressure-sensitive layer 70 and a side surface 82S opposite the side surface 81S. The side surface 81S faces the side surface 81S of another first partition wall 80a with the pressure-sensitive layer 70 interposed therebetween. An opening AP1 is formed between the opposing side surfaces 81S. The detection electrode 50 and the pressure-sensitive layer 70 are disposed in the opening AP1.

[0052] The common electrode 60 covers each of the multiple pressure-sensitive layers 70. In the example shown in Fig. 7, the common electrode 60 covers each of the multiple pressure-sensitive layers 70 and the partition walls 80, and covers the entire surface of the pressure sensor 1. The common electrode 60 faces each of the multiple detection electrodes 50 in the third direction Z, with the pressure-sensitive layers 70 interposed therebetween.

[0053] The protective layer 90 covers the common electrode 60. The protective layer 90 has an input surface 1a on the surface opposite to the surface facing the substrate 10. The common electrode 60 is, for example, a metal film deposited on the surface of the protective layer 90 opposite to the input surface 1a. Note that the pressure sensor 1 does not necessarily have to have the protective layer 90, in which case the surface of the common electrode 60 opposite to the surface facing the substrate 10 becomes the input surface 1a.

[0054] In this way, in the pressure sensor 1 according to the second embodiment, each of the plurality of detection electrodes 50 and the common electrode 60 are arranged to face each other. In other words, the pressure sensor 1 according to the second embodiment includes so-called opposed electrodes. The pressure sensor 1 according to the second embodiment also provides the same effects as those of the first embodiment.

[0055] (Third embodiment) Fig. 8 is a plan view showing an example of the configuration of a pressure sensor 1 according to a third embodiment. The description above is used to cite the same configuration as in the first embodiment, and a description will be omitted. Here, the detection unit 2 of the pressure sensor 1 will be described. In Fig. 8, the protective layer 90 is omitted.

[0056] The pressure sensor 1 includes a plurality of detection regions R and a partition wall 80. The pressure sensor 1 further includes a common electrode 61 and a common electrode 62 (not shown). In the example shown in Fig. 8, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y.

[0057] Each of the multiple detection regions R includes a detection electrode 50, a pressure-sensitive layer 70, and a transistor 30 (not shown). The pressure-sensitive layer 70 overlaps the detection electrode 50. In the example shown in FIG. 8, the pressure-sensitive layer 70 has a rectangular shape that is larger than the detection electrode 50.

[0058] In the example shown in FIG. 8 , the partition wall 80 includes a plurality of first partition walls 80a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second partition walls 80b arranged side by side in the second direction Y and extending in the first direction X. Two first partition walls 80a are arranged between adjacent pressure-sensitive layers 70 in the first direction X. Two second partition walls 80b are arranged between adjacent pressure-sensitive layers 70 in the second direction Y. The intersecting first partition walls 80a and second partition walls 80b are connected to each other. As a result, the partition wall 80 is formed in a lattice shape surrounding each of the plurality of pressure-sensitive layers 70. The partition wall 80 includes a plurality of openings AP1 overlapping the pressure-sensitive layers 70. The partition wall 80 further includes a plurality of openings AP2 not overlapping the pressure-sensitive layers 70. In the example shown in FIG. 8 , the openings AP1 have a rectangular shape the same size as the pressure-sensitive layers 70.

[0059] The common electrode 61 is disposed between two adjacent detection electrodes 50 in the first direction X or the second direction Y. In the example shown in FIG. 8 , the common electrode 61 includes a plurality of first common electrodes 61a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second common electrodes 61b arranged side by side in the second direction Y and extending in the first direction X. One first common electrode 61a is disposed between the adjacent detection electrodes 50 in the first direction X. One second common electrode 61b is disposed between the adjacent detection electrodes 50 in the second direction Y. The intersecting first common electrodes 61a and second common electrodes 61b are connected to each other. As a result, the common electrode 61 is formed in a lattice shape surrounding each of the multiple detection electrodes 50. The common electrode 61 overlaps the partition walls 80.

[0060] As indicated by the dashed dotted lines in Fig. 8, the common electrode 61 has a plurality of openings AP3 overlapping with the detection electrodes 50 and the openings AP1. In the example shown in Fig. 8, the openings AP3 have a rectangular shape that is larger than the detection electrodes 50 and smaller than the openings AP1. The common electrode 61 overlaps with the pressure-sensitive layer 70 between the edge of the openings AP3 and the edge of the openings AP1. The detection electrodes 50 are disposed in the openings AP3, spaced apart from the edge of the openings AP3.

[0061] Fig. 9 is a schematic cross-sectional view of the pressure sensor 1 taken along line IX-IX in Fig. 8. The description of the same configuration as in the first embodiment will be omitted, as the above description is used.

[0062] The pressure sensor 1 includes a substrate 10, an insulating layer 20, a plurality of transistors 30, an insulating layer 40, a plurality of detection electrodes 50, common electrodes 61 and 62, a plurality of pressure-sensitive layers 70, a partition wall 80, and a protective layer 90.

[0063] Each of the plurality of detection electrodes 50 is disposed on the surface 40B for each detection region R. Each of the plurality of detection electrodes 50 is disposed in an opening AP3 of the common electrode 61. The common electrode 61 is disposed on the surface 40B between adjacent detection electrodes 50. The detection electrodes 50 and the common electrode 61 are adjacent to each other with the pressure-sensitive layer 70 interposed therebetween.

[0064] Each of the multiple pressure-sensitive layers 70 is formed for each detection region R. The pressure-sensitive layer 70 covers the detection electrode 50. In a plan view, the pressure-sensitive layer 70 contacts the common electrode 61 between the edge of the opening AP1 and the edge of the opening AP3. The pressure-sensitive layer 70 contacts the surface 40B between the detection electrode 50 and the common electrode 61.

[0065] In the example shown in FIG. 9, two first partition walls 80a are arranged on the common electrode 61 between adjacent pressure-sensitive layers 70. Each of the first partition walls 80a has a side surface 81S facing the pressure-sensitive layer 70 and a side surface 82S opposite the side surface 81S. The side surface 81S faces the side surface 81S of another first partition wall 80a with the pressure-sensitive layer 70 interposed therebetween. An opening AP1 is formed between the opposing side surfaces 81S. Each of the detection electrode 50 and the pressure-sensitive layer 70 is arranged in the opening AP1.

[0066] The side surface 82S faces the side surface 82S of another first partition wall 80a across a gap S. An opening AP2 is formed between the facing side surfaces 82S. In the example shown in FIG. 9, the common electrode 61 is exposed in the opening AP2.

[0067] The common electrode 62 covers each of the multiple pressure-sensitive layers 70. In the example shown in Fig. 7, the common electrode 62 covers each of the multiple pressure-sensitive layers 70 and the partition walls 80, and covers the entire surface of the pressure sensor 1. The common electrode 62 faces the detection electrode 50 in the third direction Z, with the pressure-sensitive layers 70 interposed therebetween. The common electrodes 61 and 62 are at the same potential.

[0068] The protective layer 90 covers the common electrode 62. The protective layer 90 has an input surface 1a on the surface opposite to the surface facing the substrate 10. The common electrode 62 is, for example, a metal film deposited on the surface of the protective layer 90 opposite to the input surface 1a.

[0069] As described above, in the pressure sensor 1 according to the third embodiment, each of the plurality of detection electrodes 50 and the common electrode 61 are arranged on the same plane, and each of the plurality of detection electrodes 50 and the common electrode 62 are arranged to face each other. In other words, the pressure sensor 1 according to the third embodiment includes so-called hybrid electrodes that combine opposed electrodes and parallel electrodes. The pressure sensor 1 according to the third embodiment also provides the same effects as those of the first embodiment.

[0070] (Configuration example of detection unit 2) (Configuration example 1) Fig. 10 is a plan view showing an example of the configuration of the detection unit 2. The description above is used to cite the same configuration as in the first embodiment, and a description thereof will be omitted. In Fig. 10, the detection electrode 50, the common electrode 60, and the protective layer 90 are omitted.

[0071] The pressure sensor 1 includes a plurality of detection regions R and a partition wall 80. In the example shown in Fig. 10, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y. Each of the plurality of detection regions R includes a pressure-sensitive layer 70, a transistor 30 (not shown), and a detection electrode 50 (not shown).

[0072] 10 , the partition walls 80 include a plurality of first partition walls 80a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second partition walls 80b arranged side by side in the second direction Y and extending in the first direction X. One first partition wall 80a is arranged between each pair of pressure-sensitive layers 70 adjacent to each other in the first direction X, and one second partition wall 80b is arranged between each pair of pressure-sensitive layers 70 adjacent to each other in the second direction Y. The intersecting first partition walls 80a and second partition walls 80b are connected to each other. As a result, the partition walls 80 are formed in a lattice shape as a whole, surrounding each of the plurality of pressure-sensitive layers 70.

[0073] 10, the partition wall 80 has a plurality of openings AP1 that overlap the pressure-sensitive layer 70. In the partition wall 80, the plurality of openings AP1 are arranged side by side in the first direction X and the second direction Y. The openings AP1 have a rectangular shape and are the same size as the pressure-sensitive layer 70. The pressure sensor 1 according to the first configuration example also provides the same effects as those of the first embodiment.

[0074] (Configuration example 2) Fig. 11 is a plan view showing an example of the configuration of the detection unit 2. The description above is used to cite the same configuration as in the first embodiment, and a description thereof will be omitted. In Fig. 11, the detection electrode 50, the common electrode 60, and the protective layer 90 are omitted.

[0075] The pressure sensor 1 includes a plurality of detection regions R and a plurality of partition walls 80. In the example shown in Fig. 11, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y. Each of the plurality of detection regions R includes a pressure-sensitive layer 70, a transistor 30 (not shown), and a detection electrode 50 (not shown).

[0076] Each of the plurality of partition walls 80 has a ring shape that surrounds the pressure-sensitive layer 70. Each of the plurality of partition walls 80 has an opening AP1 that overlaps the pressure-sensitive layer 70. In the example shown in Fig. 11, the opening AP1 has a rectangular shape that is the same size as the pressure-sensitive layer 70. The pressure sensor 1 according to the second configuration example also provides the same effects as those of the first embodiment.

[0077] (Configuration example 3) Fig. 12 is a plan view showing an example of the configuration of the detection unit 2. The description above is used to cite the same configuration as in the first embodiment, and a description thereof will be omitted. In Fig. 12, the detection electrode 50, the common electrode 60, and the protective layer 90 are omitted.

[0078] The pressure sensor 1 includes a plurality of detection regions R and a plurality of partition walls 80. In the example shown in Fig. 12, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y. Each of the plurality of detection regions R includes a pressure-sensitive layer 70, a transistor 30 (not shown), and a detection electrode 50 (not shown).

[0079] 12, the multiple partition walls 80 are arranged side by side in the first direction X and extend in the second direction Y. One partition wall 80 is arranged between each pair of pressure-sensitive layers 70 adjacent to each other in the first direction X. Each of the multiple partition walls 80 is in contact with each of the multiple pressure-sensitive layers 70 arranged side by side in the second direction Y. The pressure sensor 1 according to the third configuration example also provides the same effects as those of the first embodiment.

[0080] (Configuration example 4) Fig. 13 is a plan view showing an example of the configuration of the detection unit 2. The description above is used to cite the same configuration as in the second embodiment, and a description thereof will be omitted. In Fig. 13, the common electrode 60 and the protective layer 90 are omitted.

[0081] The pressure sensor 1 includes a plurality of detection regions R and a partition wall 80. In the example shown in FIG. 13, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y. The pressure sensor 1 includes pressure-sensitive layers 71, 72, and 73 as pressure-sensitive layers. Each of the plurality of detection regions R includes the pressure-sensitive layer 71, 72, or 73. Each of the plurality of detection regions R further includes a detection electrode 50 and a transistor 30 (not shown).

[0082] Each of the pressure-sensitive layers 71, 72, and 73 overlaps with the detection electrode 50. The pressure-sensitive layers 71, 72, and 73 have, for example, a rectangular shape of the same size as each other. Each of the pressure-sensitive layers 71, 72, and 73 have, for example, a rectangular shape of the same size as the detection electrode 50. In the example shown in FIG. 13 , a plurality of pressure-sensitive layers 71 are arranged side by side in the second direction Y, a plurality of pressure-sensitive layers 72 are arranged side by side in the second direction Y, and a plurality of pressure-sensitive layers 73 are arranged side by side in the second direction Y. Furthermore, the pressure-sensitive layers 71, 72, and 73 are arranged side by side in this order in the first direction X. However, the arrangement of the pressure-sensitive layers 71, 72, and 73 is not limited to this.

[0083] In the example shown in FIG. 13, the pressure sensor 1 includes the same number of pressure-sensitive layers 71, 72, and 73, but is not limited to this, and may include different numbers of pressure-sensitive layers 71, 72, and 73.

[0084] The pressure-sensitive layers 71, 72, and 73 have different resistance changes in response to pressure changes. For example, the resistance changes in response to pressure changes may be made different by varying the content of conductive material contained in the insulating resin. Alternatively, the resistance changes in response to pressure changes may be made different by varying the conductivity of the conductive material contained in the insulating resin. Alternatively, the resistance changes in response to pressure changes may be made different by varying the hardness of the insulating resin.

[0085] 13, the pressure sensor 1 includes three types of pressure-sensitive layers that have different changes in resistance value in response to a change in pressure, namely, pressure-sensitive layers 71, 72, and 73. However, the present invention is not limited to this. The pressure sensor 1 may include at least two or more types of pressure-sensitive layers that have different changes in resistance value in response to a change in pressure, and may include four or more types.

[0086] In the example shown in FIG. 13 , the partitions 80 include a plurality of first partitions 80a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second partitions 80b arranged side by side in the second direction Y and extending in the first direction X. Two first partitions 80a are arranged between adjacent pressure-sensitive layers in the first direction X. Two second partitions 80b are arranged between adjacent pressure-sensitive layers in the second direction Y. The intersecting first partitions 80a and second partitions 80b are connected to each other. As a result, the partitions 80 as a whole are formed in a lattice shape surrounding each of the pressure-sensitive layers 71, 72, and 73.

[0087] The partition wall 80 has a plurality of openings AP11 overlapping the pressure-sensitive layer 71, a plurality of openings AP12 overlapping the pressure-sensitive layer 72, and a plurality of openings AP13 overlapping the pressure-sensitive layer 73. The openings AP11 have a rectangular shape and are the same size as the pressure-sensitive layer 71. The openings AP12 have a rectangular shape and are the same size as the pressure-sensitive layer 72. The openings AP13 have a rectangular shape and are the same size as the pressure-sensitive layer 73. In the example shown in FIG. 13 , the openings AP11, AP12, and AP13 have rectangular shapes and are the same size as each other.

[0088] FIG. 14 is a diagram showing an example of the relationship between the pressure P applied to the input surface 1a and the current value C. In FIG. The pressure-sensitive layers 71, 72, and 73 have different resistance values ​​that change with a change in pressure P. For this reason, in the pressure sensor 1 including the pressure-sensitive layers 71, 72, and 73, as shown in Fig. 14, the current value C1 that flows between the detection electrode 50 and the common electrode 60 via the pressure-sensitive layer 71, the current value C2 that flows between the detection electrode 50 and the common electrode 60 via the pressure-sensitive layer 72, and the current value C3 that flows between the detection electrode 50 and the common electrode 60 via the pressure-sensitive layer 73 all vary in the way that the current value C changes with a change in pressure P. For this reason, the pressure-sensitive layers 71, 72, and 73 have different ranges of pressure P within which changes in pressure P can be accurately detected.

[0089] 14, the pressure-sensitive layer 71 can detect changes in pressure P at low pressures with good sensitivity, but the range of pressure P over which changes in pressure P can be detected is narrower than that of the pressure-sensitive layer 72. The pressure-sensitive layer 72 has lower sensitivity at low pressures than the pressure-sensitive layer 71, but the range of pressure P over which changes in pressure P can be detected is wider than that of the pressure-sensitive layer 71. Therefore, the pressure sensor 1 including the pressure-sensitive layers 71 and 72 can detect changes in pressure P over a wider range of pressure P than a pressure sensor including only the pressure-sensitive layer 71. Furthermore, such a pressure sensor 1 can detect changes in pressure P at low pressures with better sensitivity than a pressure sensor including only the pressure-sensitive layer 72.

[0090] According to this configuration example, the pressure sensor 1 can detect changes in pressure input to the input surface 1a over a wider pressure range. Also, the detection sensitivity can be further improved within a desired pressure range. Also, the pressure sensor 1 according to configuration example 4 can achieve the same effects as those of the first embodiment.

[0091] (Configuration Example 5) Fig. 15 is a plan view showing one configuration example of the detection unit 2. The description above is used to omit a description of the same configuration as in the above-mentioned configuration example 4. In Fig. 15, the common electrode 60 and the protective layer 90 are omitted. The pressure sensor 1 of configuration example 5 differs from configuration example 4 in that the pressure-sensitive layers 71, 72, and 73 have different areas.

[0092] The pressure sensor 1 includes a plurality of detection regions R and a partition wall 80. In the example shown in Fig. 15, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y. Each of the plurality of detection regions R includes a pressure-sensitive layer 71, 72, or 73. Each of the plurality of detection regions R further includes a detection electrode 50 and a transistor 30 (not shown).

[0093] 15, a plurality of pressure-sensitive layers 71 are arranged side by side in the second direction Y, a plurality of pressure-sensitive layers 72 are arranged side by side in the second direction Y, and a plurality of pressure-sensitive layers 73 are arranged side by side in the second direction Y. Furthermore, the pressure-sensitive layers 71, 72, and 73 are arranged side by side in this order in the first direction X. However, the arrangement of the pressure-sensitive layers 71, 72, and 73 is not limited to this.

[0094] The pressure-sensitive layers 71, 72, and 73 have different areas. In the example shown in Fig. 15, the pressure-sensitive layer 72 has a larger area than the pressure-sensitive layer 71, and the pressure-sensitive layer 73 has a larger area than the pressure-sensitive layers 71 and 72, but this is not limited to this. It is also possible that one of the pressure-sensitive layers 71, 72, and 73 has a different area from the other two pressure-sensitive layers, and the other two pressure-sensitive layers have the same area.

[0095] 15, the detection electrode 50 is larger than the pressure-sensitive layers 71 and 72 and has a rectangular shape the same size as the pressure-sensitive layer 73.

[0096] In the example shown in FIG. 15 , the partitions 80 include a plurality of first partitions 80a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second partitions 80b arranged side by side in the second direction Y and extending in the first direction X. Two first partitions 80a are arranged between adjacent pressure-sensitive layers in the first direction X. Two second partitions 80b are arranged between adjacent pressure-sensitive layers in the second direction Y. The intersecting first partitions 80a and second partitions 80b are connected to each other. As a result, the partitions 80 as a whole are formed in a lattice shape surrounding each of the pressure-sensitive layers 71, 72, and 73.

[0097] The partition wall 80 has a plurality of openings AP11 overlapping the pressure-sensitive layer 71, a plurality of openings AP12 overlapping the pressure-sensitive layer 72, and a plurality of openings AP13 overlapping the pressure-sensitive layer 73. The openings AP11, AP12, and AP13 have a rectangular shape and are the same size as the pressure-sensitive layer 73. Each of the pressure-sensitive layers 71 and 72 is spaced apart from the partition wall 80. The pressure-sensitive layer 73 is in contact with the partition wall 80. The pressure sensor 1 according to the fifth configuration example also provides the same effects as those of the fourth configuration example.

[0098] (Configuration Example 6) Fig. 16 is a plan view showing one configuration example of the detection unit 2. The description above is used to omit a description of the same configuration as in the above-described configuration example 5. In Fig. 16, the common electrode 60 and the protective layer 90 are omitted. The pressure sensor 1 of configuration example 6 differs from configuration example 5 in that the opening AP11 overlapping the pressure-sensitive layer 71, the opening AP12 overlapping the pressure-sensitive layer 72, and the opening AP13 overlapping the pressure-sensitive layer 73 have different areas.

[0099] The pressure sensor 1 includes a plurality of detection regions R and a partition wall 80. In the example shown in Fig. 16, the plurality of detection regions R are arranged side by side in the first direction X and the second direction Y. Each of the plurality of detection regions R includes a pressure-sensitive layer 71, 72, or 73. Each of the plurality of detection regions R includes a detection electrode 51, 52, or 53. Each of the plurality of detection regions R further includes a transistor 30 (not shown).

[0100] The pressure-sensitive layer 71 overlaps the detection electrode 51. The pressure-sensitive layer 72 overlaps the detection electrode 52. The pressure-sensitive layer 73 overlaps the detection electrode 53.

[0101] 16, a plurality of pressure-sensitive layers 71 are arranged side by side in the second direction Y, a plurality of pressure-sensitive layers 72 are arranged side by side in the second direction Y, and a plurality of pressure-sensitive layers 73 are arranged side by side in the second direction Y. Furthermore, the pressure-sensitive layers 71, 72, and 73 are arranged side by side in this order in the first direction X. However, the arrangement of the pressure-sensitive layers 71, 72, and 73 is not limited to this.

[0102] 16, the pressure-sensitive layer 71 has a square shape, the pressure-sensitive layer 72 has a square shape larger than that of the pressure-sensitive layer 71, and the pressure-sensitive layer 73 has a square shape larger than that of the pressure-sensitive layers 71 and 72. In other words, the length of one side of the pressure-sensitive layer 72 is longer than that of the pressure-sensitive layer 71, and the length of one side of the pressure-sensitive layer 73 is longer than that of the pressure-sensitive layers 71 and 72.

[0103] In the example shown in FIG. 16 , the partitions 80 include a plurality of first partitions 80a arranged side by side in the first direction X and extending in the second direction Y, and a plurality of second partitions 80b arranged side by side in the second direction Y and extending in the first direction X. Two first partitions 80a are arranged between adjacent pressure-sensitive layers in the first direction X. Two second partitions 80b are arranged between adjacent pressure-sensitive layers in the second direction Y. The intersecting first partitions 80a and second partitions 80b are connected to each other. As a result, the partitions 80 as a whole are formed in a lattice shape surrounding each of the pressure-sensitive layers 71, 72, and 73.

[0104] The partition wall 80 includes a plurality of openings AP11 overlapping the pressure-sensitive layer 71, a plurality of openings AP12 overlapping the pressure-sensitive layer 72, and a plurality of openings AP13 overlapping the pressure-sensitive layer 73. The openings AP11, AP12, and AP13 have different areas. In the example shown in FIG. 16, each of the openings AP11, AP12, and AP13 has a rectangular shape. The length of the opening AP11 in the first direction X is equal to the length of one side of the pressure-sensitive layer 71. The length of the opening AP12 in the first direction X is equal to the length of one side of the pressure-sensitive layer 72. The length of the opening AP13 in the first direction X is equal to the length of one side of the pressure-sensitive layer 73. The lengths of the pressure-sensitive layers 71, 72, and 73 in the second direction Y are equal to the length of one side of the pressure-sensitive layer 73. In other words, the opening AP12 has a larger area than the opening AP11, and the opening AP13 has a larger area than the openings AP11 and AP12.

[0105] 16, each of the pressure-sensitive layers 71 and 72 has three sides in contact with the partition wall 80 and one side spaced apart from the partition wall 80. The pressure-sensitive layer 73 has all four sides in contact with the partition wall 80. The detection electrode 51 has a rectangular shape that is the same size as the opening AP11, the detection electrode 52 has a rectangular shape that is the same size as the opening AP12, and the detection electrode 53 has a rectangular shape that is the same size as the opening AP13. The pressure sensor 1 according to the sixth configuration example also provides the same effects as those of the fifth configuration example.

[0106] The configuration examples shown in FIGS. 10 to 13, 15 and 16 can be applied to any of pressure sensors with parallel electrodes, pressure sensors with opposed electrodes, and pressure sensors with hybrid electrodes.

[0107] As described above, according to this embodiment, it is possible to provide a pressure sensor capable of suppressing a decrease in reliability.

[0108] The present invention is not limited to the above-described embodiments, and the components can be modified and embodied in practice without departing from the spirit of the invention. Furthermore, various inventions can be created by appropriately combining multiple components disclosed in each embodiment. For example, some components may be omitted from all the components shown in each embodiment. Furthermore, components from different embodiments may be appropriately combined. [Explanation of symbols]

[0109] 1...Pressure sensor 2...Detection part 3...Non-detection part 4...Connection portion 5...Gate line driving circuit 6...Signal line selection circuit 7...Common wiring 8...Gate line 9...Signal line 10... Substrate 20... Insulating layer 30... Transistor 40... Insulating layer 50... Detection electrode 60, 61, 62…Common electrode 70... Pressure-sensitive layer 80... Partition wall 90... Protective layer R: Detection area

Claims

1. a first sensing region including a first transistor, a first sensing electrode electrically connected to the first transistor, and a first pressure-sensitive layer disposed on the first sensing electrode; a second sensing region including a second transistor, a second sensing electrode electrically connected to the second transistor, and a second pressure-sensitive layer disposed on the second sensing electrode; a partition disposed between the first pressure-sensitive layer and the second pressure-sensitive layer.

2. the partition wall surrounds each of the first pressure-sensitive layer and the second pressure-sensitive layer, The pressure sensor according to claim 1 , wherein the partition wall has, in a plan view, a first opening overlapping the first pressure-sensitive layer and a second opening overlapping the second pressure-sensitive layer.

3. The pressure sensor according to claim 1 , wherein the partition wall is made of an insulating material.

4. The pressure sensor according to claim 1 , wherein the partition wall is made of an acrylic resin or an epoxy resin.

5. The pressure sensor according to claim 1 , wherein the first pressure-sensitive layer and the second pressure-sensitive layer are formed of an insulating resin containing a conductive material.

6. The pressure sensor according to claim 1 , wherein the first pressure-sensitive layer and the second pressure-sensitive layer have different resistance values ​​that change with pressure.

7. The pressure sensor according to claim 1 , wherein the first pressure-sensitive layer and the second pressure-sensitive layer have different areas in a plan view.

8. The pressure sensor according to claim 2 , wherein the first opening and the second opening have different areas in a plan view.

9. an insulating layer covering the first transistor and the second transistor; the first detection electrode and the second detection electrode are disposed on the insulating layer; The pressure sensor according to claim 1 , wherein the partition wall is disposed on the insulating layer.

10. The pressure sensor of claim 9 further comprising a common electrode disposed on the insulating layer.

11. The pressure sensor of claim 9 , further comprising a common electrode disposed on the first pressure sensitive layer and the second pressure sensitive layer.

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