Semiconductor device

Abstract

To provide a semiconductor device that effectively uses a conductive layer formed in the same process as one electrode of an element.SOLUTION: A semiconductor device has a first conductive layer 201 on a substrate 100, has a first insulating layer 300 thereon, has a first oxide semiconductor layer 301 thereon, has a second oxide semiconductor layer 302 thereon, has a second conductive layer 401 on the first oxide semiconductor layer, has a third conductive layer 402 on the second oxide semiconductor layer, has a fourth conductive layer 403 on the first oxide semiconductor layer and the second oxide semiconductor layer, has a second insulating layer 500 on the second conductive layer, third conductive layer, and fourth conductive layer, and has a fifth conductive layer 601 and a sixth conductive layer 604 thereon. The first conductive layer has a region overlapping the first oxide semiconductor layer. The fifth conductive layer has a region overlapping the first oxide semiconductor layer. The sixth conductive layer has a region overlapping the second oxide semiconductor layer and electrically connects the fifth conductive layer to the first conductive layer.SELECTED DRAWING: Figure 44

Description

[Technical Field]

[0001] The technical field relates to semiconductor devices. [Background technology]

[0002] Patent Document 1 discloses a semiconductor device having a transistor.

[0003] In paragraph 0012 of Patent Document 1, it is stated that "hydrogen element has both of the two factors that induce carriers. Therefore, a substance containing a hydrogen element hinders the oxide semiconductor layer from being highly purified and becoming closer to an i-type oxide semiconductor. It is stated that "it can be said that it is an element that contributes to the growth of iron."

[0004] In paragraph 0013 of Patent Document 1, "Substances containing hydrogen elements include, for example, hydrogen, water, hydroxide, etc. It is stated that "these compounds are compounds, hydrides, etc."

[0005] Patent Document 1 describes that when a substance containing a hydrogen element is contained in an oxide semiconductor layer, a transistor It is described that the threshold voltage of the transistor is shifted to the negative side. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-142311 Summary of the Invention [Problem to be solved by the invention]

[0007] The first purpose is to effectively utilize the conductive layer formed in the same process as one of the electrodes of the element. be.

[0008] The second purpose is to prevent substances containing hydrogen from penetrating into the oxide semiconductor layer. be.

[0009] The third purpose is to increase the on-state current of the transistors in the circuit.

[0010] A fourth object is to provide a semiconductor device having a novel structure.

[0011] The invention disclosed below is sufficient if it can achieve at least one of the first to fourth objects. [Means for solving the problem]

[0012] The inventions that can achieve at least one of the first to fourth objects are exemplified below.

[0013] For example, a first conductive layer is provided on an insulating surface, and a first insulating layer is provided on the first conductive layer. a first oxide semiconductor layer on the first insulating layer; and a second oxide semiconductor layer on the first insulating layer. a second conductive layer on the first oxide semiconductor layer; a third conductive layer on the first oxide semiconductor layer and a second oxide semiconductor layer on the second oxide semiconductor layer; a fourth conductive layer on the semiconductor layer, and a fourth conductive layer on the second conductive layer, the third conductive layer, and the a second insulating layer on the fourth conductive layer, a fifth conductive layer on the second insulating layer, a sixth conductive layer on the second insulating layer, the sixth conductive layer being connected to the first oxide semiconductor layer; the fifth conductive layer has a region overlapping with the first oxide semiconductor layer, The sixth conductive layer has a region overlapping with the second oxide semiconductor layer, and the fifth conductive layer a semiconductor device characterized in that the first conductive layer is electrically connected to the second conductive layer. .

[0014] For example, a first conductive layer is provided on an insulating surface, and a first insulating layer is provided on the first conductive layer. an oxide semiconductor layer on the first insulating layer; and a second conductive layer on the oxide semiconductor layer. a third conductive layer on the oxide semiconductor layer; and a fourth conductive layer on the oxide semiconductor layer. a second conductive layer on the second conductive layer, a third conductive layer on the third conductive layer, and a fourth conductive layer on the second conductive layer; a fifth conductive layer on the second insulating layer; a sixth conductive layer on the second insulating layer; a fourth conductive layer located between the second conductive layer and the third conductive layer; The oxide semiconductor layer has a first region overlapping the second conductive layer, and the oxide semiconductor The conductor layer has a second region overlapping the third conductive layer, and the oxide semiconductor layer has the a third region overlapping the fourth conductive layer, and the oxide semiconductor layer is a fourth region between the second region and the third region, and the oxide semiconductor layer a fifth region between the first conductive layer and the fourth region, and the first conductive layer has a region overlapping the fourth region; the fifth conductive layer has a region overlapping with the fourth region, and the sixth conductive layer has The fifth conductive layer has an area overlapping the fifth area, and the fifth conductive layer is electrically connected to the first conductive layer. The semiconductor device is characterized in that the semiconductor device is connected to the

[0015] For example, the sixth conductive layer is in a floating state. [Effects of the Invention]

[0016] The conductive layer formed in the same process as one electrode of the element can be effectively utilized.

[0017] This can prevent a substance containing a hydrogen element from entering the oxide semiconductor layer.

[0018] The on-state current of a transistor in the circuit can be increased.

[0019] A semiconductor device having a novel structure can be provided. [Brief explanation of the drawings]

[0020] [Figure 1] 1 is an example of a semiconductor device. [Figure 2] 1 is an example of a semiconductor device. [Figure 3] 1 is an example of a semiconductor device. [Figure 4] 1 is an example of a semiconductor device. [Figure 5] 1 is an example of a semiconductor device. [Figure 6] 1 is an example of a semiconductor device. [Figure 7] 1 is an example of a semiconductor device. [Figure 8] 1 is an example of a semiconductor device. [Figure 9] 1 is an example of a semiconductor device. [Figure 10] 1 is an example of a semiconductor device. [Figure 11] 1 is an example of a semiconductor device. [Figure 12] 1 is an example of a semiconductor device. [Figure 13] 1 is an example of a semiconductor device. [Figure 14] 1 is an example of a semiconductor device. [Figure 15] 1 is an example of a semiconductor device. [Figure 16] 1 is an example of a semiconductor device. [Figure 17] 1 is an example of a semiconductor device. [Figure 18] 1 is an example of a semiconductor device. [Figure 19] 1 is an example of a semiconductor device. [Figure 20] 1 is an example of a semiconductor device. [Figure 21] 1 is an example of a semiconductor device. [Figure 22] 1 is an example of a semiconductor device. [Figure 23] 1 is an example of a semiconductor device. [Figure 24] 1 is an example of a semiconductor device. [Figure 25] 1 is an example of a semiconductor device. [Figure 26]1 is an example of a semiconductor device. [Figure 27] 1 is an example of a semiconductor device. [Figure 28] 1 is an example of a semiconductor device. [Figure 29] 1 is an example of a semiconductor device. [Figure 30] 1 is an example of a semiconductor device. [Figure 31] 1 is an example of a semiconductor device. [Figure 32] 1 is an example of a semiconductor device. [Figure 33] 1 is an example of a semiconductor device. [Figure 34] 1 is an example of a semiconductor device. [Figure 35] 1 is an example of a semiconductor device. [Figure 36] 1 is an example of a semiconductor device. [Figure 37] 1 is an example of a semiconductor device. [Figure 38] 1 is an example of a semiconductor device. [Figure 39] 1 is an example of a semiconductor device. [Figure 40] 1 is an example of a semiconductor device. [Figure 41] 1 is an example of a semiconductor device. [Figure 42] 1 is an example of a semiconductor device. [Figure 43] 1 is an example of a semiconductor device. [Figure 44] 1 is an example of a semiconductor device. [Figure 45] 1 is an example of a semiconductor device. [Figure 46] 1 is an example of a semiconductor device. DETAILED DESCRIPTION OF THE INVENTION

[0021] The embodiments will be described in detail with reference to the drawings.

[0022] However, various changes in form and details may be made without departing from the spirit of the invention. This is readily understood by those skilled in the art.

[0023] Therefore, the scope of the invention should not be interpreted as being limited to the description of the following embodiments. do not have.

[0024] In the configurations described below, the same parts or parts having similar functions are denoted by the same reference numerals or symbols. The same hatching is used in common among different drawings, and repeated explanations thereof will be omitted.

[0025] In addition, the following embodiments can be implemented in combination with some or all of them as appropriate.

[0026] (Embodiment 1) The conductive layer formed in the same process as one electrode of the element can be effectively utilized. An example of a semiconductor device is shown below.

[0027] The substrate 10 has an insulating surface (FIGS. 1(A) and 1(B)).

[0028] A conductive layer 21 is provided on the insulating surface (FIG. 1(A)).

[0029] A conductive layer 22 is provided on the insulating surface (FIG. 1(A)).

[0030] A conductive layer 23 is provided on the insulating surface (FIG. 1(B)).

[0031] At least a part of the conductive layer 21 may function as, for example, a gate electrode of a transistor. This can be done.

[0032] At least a portion of the conductive layer 22 can function as, for example, a wiring or an electrode.

[0033] At least a portion of the conductive layer 22 may function as a gate electrode of a transistor.

[0034] At least a part of the conductive layer 23 may function as, for example, a gate electrode of a transistor. This can be done.

[0035] The conductive layers 21, 22, and 23 can be formed in the same step.

[0036] Therefore, the conductive layers 21, 22 and 23 can have the same material.

[0037] An insulating layer 30 is provided on the conductive layer 21, the conductive layer 22, and the conductive layer 23 (FIG. 1(A), Figure 1(B)).

[0038] At least a part of the insulating layer 30 functions as, for example, a gate insulating film of a transistor. It is possible.

[0039] A semiconductor layer 31 is provided on an insulating layer 30 (FIG. 1(A)).

[0040] A semiconductor layer 32 is provided on an insulating layer 30 (FIG. 1(B)).

[0041] The semiconductor layer 31 has a region overlapping with the conductive layer 21 .

[0042] The semiconductor layer 32 has an area overlapping with the conductive layer 23 .

[0043] At least a part of the semiconductor layer 31 functions as, for example, a channel forming region of a transistor. It can be done.

[0044] At least a part of the semiconductor layer 32 functions as, for example, a channel forming region of a transistor. It can be done.

[0045] The channel formation region is a region where a channel is formed.

[0046] A conductive layer 41 is provided on a semiconductor layer 31 (FIG. 1(A)).

[0047] A conductive layer 42 is provided on the semiconductor layer 31 (FIG. 1(A)).

[0048] A conductive layer 43 is provided on the semiconductor layer 32 (FIG. 1(B)).

[0049] A conductive layer 44 is provided on the semiconductor layer 32 (FIG. 1(B)).

[0050] At least a part of the conductive layer 41 may be, for example, a source electrode or a drain electrode of a transistor. It can function as one of the two.

[0051] At least a portion of the conductive layer 42 may be, for example, a source electrode or a drain electrode of a transistor. It can function as the other of the two.

[0052] At least a portion of the conductive layer 43 may be, for example, a source electrode or a drain electrode of a transistor. It can function as one of the two.

[0053] At least a portion of the conductive layer 44 may be, for example, a source electrode or a drain electrode of a transistor. It can function as the other of the two.

[0054] The conductive layer 41, the conductive layer 42, the conductive layer 43, and the conductive layer 44 can be formed in the same process. do.

[0055] Therefore, the conductive layers 41, 42, 43, and 44 are made of the same material. can be done.

[0056] An insulating layer 50 is provided on the conductive layer 41, the conductive layer 42, the conductive layer 43, and the conductive layer 44. (Figure 1(A), Figure 1(B)).

[0057] At least a portion of the insulating layer 50 can function as, for example, an interlayer insulating film.

[0058] When the insulating layer 50 includes an inorganic material, at least a portion of the insulating layer 50 may be formed of, for example, a protective film. It can function as.

[0059] A conductive layer 61 is provided on an insulating layer 50 (FIG. 1(A)).

[0060] A conductive layer 62 is provided on the insulating layer 50 (FIG. 1(B)).

[0061] The conductive layer 61 is electrically connected to the conductive layer 22 .

[0062] The conductive layer 61 is electrically connected to the conductive layer 42 .

[0063] The conductive layer 62 is electrically connected to the conductive layer 44 .

[0064] At least a portion of the conductive layer 61 can function as, for example, a wiring or an electrode.

[0065] At least a portion of the conductive layer 62 can function as, for example, one electrode of the element. do.

[0066] One electrode of the element can be called the bottom electrode.

[0067] The other electrode of the element can be called the top electrode.

[0068] When the element is a display device, one electrode of the element can be called a pixel electrode.

[0069] When the device is a display device, the other electrode of the device can be called a counter electrode.

[0070] The conductive layer 61 and the conductive layer 62 can be formed in the same step.

[0071] Therefore, the conductive layer 61 and the conductive layer 62 can have the same material.

[0072] An insulating layer 70 is provided on the conductive layer 61 and the conductive layer 62 (FIGS. 1(A) and 1(B)).

[0073] In the case of an EL display device, at least a part of the insulating layer 70 may function as, for example, a partition wall. The partition wall is located between adjacent pixel electrodes.

[0074] The partition preferably comprises an organic material.

[0075] By including an organic substance in the partition wall, the partition wall can function as a planarizing film. .

[0076] In the case of an EL display device, insulating layer 70 has areas that overlap the edges of conductive layer 62 .

[0077] In the case of an EL display, insulating layer 70 has holes in the areas where it overlaps conductive layer 62 .

[0078] When a liquid crystal display device is to be manufactured, at least a part of the insulating layer 70 is used as, for example, an alignment film. It can function as such.

[0079] When at least a part of the insulating layer 70 is made to function as an alignment film, the entire conductive layer 62 is made to function as an insulating film. It is preferable that it overlaps at least a portion of the edge layer 70 .

[0080] The alignment film preferably comprises an organic material.

[0081] In the case of an EL display device, a functional layer 80 is provided on the conductive layer 62 and the insulating layer 70 (FIG. 1(B) )).

[0082] In the case of an EL display device, the functional layer 80 is, for example, an EL layer (a layer containing an organic compound).

[0083] When a liquid crystal display device is to be manufactured, it is preferable to form the functional layer 80 on the alignment film.

[0084] In the case of a liquid crystal display device, the functional layer 80 is, for example, a liquid crystal layer.

[0085] A conductive layer 90 is provided on the functional layer 80 (FIG. 1(B)).

[0086] The conductive layer 90 can function, for example, as the other electrode of the element.

[0087] The structure shown in FIG. 1 includes a first hole penetrating only the insulating layer 50, and a second hole penetrating the insulating layer 50 and the insulating layer 30. The structure shown in FIG. 1 has a third hole that penetrates only the insulating layer 30. does not have.

[0088] The first hole and the second hole can be formed in the same step.

[0089] The first hole and the third hole cannot be formed in the same step.

[0090] The second hole and the third hole cannot be formed in the same step.

[0091] Therefore, the structure shown in FIG. 1 is a structure that makes it possible to reduce the number of steps.

[0092] If the third hole is not provided, the conductive layer 42 and the conductive layer 22 cannot be directly connected. .

[0093] Therefore, in FIG. 1, the conductive layer 42 and the conductive layer 22 are electrically connected via the conductive layer 61. are.

[0094] The conductive layer 61 can be formed in the same process as the conductive layer 62 (one electrode of the element). do.

[0095] Therefore, the structure shown in FIG. 1 effectively utilizes the conductive layer formed in the same process as one electrode of the element. It can be said that this is a structure that can be used.

[0096] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0097] (Embodiment 2) The structure allows for effective use of the conductive layer formed in the same process as one electrode of the element. An example of a semiconductor device is shown below.

[0098] 2A shows a structure in which the conductive layer 22 in FIG. 1A is removed and the conductive layer 61 and the conductive layer 21 are left. 1 is an example of a diagram in which the components are electrically connected.

[0099] In FIG. 2A, the other of the source and drain of the transistor is connected to the gate of the transistor. It is electrically connected to the port.

[0100] The connection in Figure 2(A) is called a diode connection.

[0101] By making a diode connection, a diode is formed using a transistor. can be done.

[0102] FIG. 2(B) is a diagram in which the conductive layer 22 is removed from FIG. 1(A) and a conductive layer 45 is added. This is an example.

[0103] The conductive layer 45 can be formed in the same step as the conductive layers 41 and 42 .

[0104] Thus, conductive layer 45 can have the same material as conductive layers 41 and 42 .

[0105] The conductive layer 61 is electrically connected to the conductive layer 45 .

[0106] The structure shown in this embodiment mode effectively uses a conductive layer formed in the same process as one electrode of the element. It can be said that this is a structure that can be used.

[0107] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0108] (Embodiment 3) A semiconductor having a structure capable of suppressing penetration of a substance containing hydrogen into an oxide semiconductor layer 1 shows an example of a conductor device.

[0109] When a substance containing a hydrogen element is contained in an oxide semiconductor layer, the threshold voltage of a transistor is The pressure shifts to the negative side.

[0110] By the way, inorganic substances have the function of blocking H2O.

[0111] Thus, for example, the insulating layer 50 in FIG. 1 preferably comprises an inorganic material.

[0112] By including an inorganic substance in the insulating layer 50, the substance containing hydrogen atoms can be easily introduced into the oxide semiconductor layer. It is possible to suppress the invasion of

[0113] Also, for example, as shown in FIG. 3, it is preferable to form a conductive layer 63.

[0114] The conductive layer 63 has a region overlapping with the channel formation region of the semiconductor layer 31 .

[0115] The conductive layer 63 prevents a substance containing hydrogen from penetrating into the oxide semiconductor layer. It can be further suppressed.

[0116] When the conductive layer 63 has an inorganic substance, the conductive layer 63 may function as, for example, a protective film. This can be done.

[0117] The semiconductor layer 31 in FIG. 3 is preferably an oxide semiconductor layer.

[0118] The insulating layer 70 is not an essential component.

[0119] When the insulating layer 70 contains an organic material, the insulating layer 70 may function as, for example, a planarizing film. This can be done.

[0120] When the insulating layer 70 contains an organic substance, the insulating layer 70 is provided with a substance containing hydrogen (H2O). This is because organic matter releases more H2O than inorganic matter. Because it includes.

[0121] Therefore, when the insulating layer 70 contains an organic material, the conductive layer 63 is formed on the insulating layer 50 as shown in FIG. and the insulating layer 70.

[0122] By disposing the conductive layer 63 between the insulating layer 50 and the insulating layer 70, the oxide semiconductor layer It is possible to prevent substances containing hydrogen elements from entering the

[0123] The semiconductor layer 31 has a first region that overlaps with the conductive layer 41 .

[0124] The semiconductor layer 31 has a second region that overlaps with the conductive layer 42 .

[0125] The semiconductor layer 31 has a third region.

[0126] The third region does not overlap with the conductive layer 41 and the conductive layer 42 .

[0127] The conductive layer 63 overlaps at least the third region.

[0128] Conductive layer 41, conductive layer 42, and conductive layer 63 each preferably comprise an inorganic material.

[0129] The conductive layer 41 has a function of preventing substances containing hydrogen from penetrating into the first region. Possess the ability.

[0130] The conductive layer 42 has a function of preventing substances containing hydrogen from penetrating into the second region. Possess the ability.

[0131] The conductive layer 63 has a function of preventing substances containing hydrogen from penetrating into the third region. Possess the ability.

[0132] The conductive layer 63 preferably overlaps the first region.

[0133] The conductive layer 63 preferably overlaps the second region.

[0134] When the conductive layer 63 and the conductive layer 21 are electrically connected, at least a part of the conductive layer 63 is , can function as a gate electrode, for example.

[0135] When the conductive layer 63 and the conductive layer 21 are electrically connected, at least a part of the insulating layer 50 For example, it can function as a gate insulating film.

[0136] When the conductive layer 63 and the conductive layer 21 are electrically connected, a transistor having the semiconductor layer 31 The transistor is a dual-gate transistor.

[0137] A dual-gate transistor has a structure in which a semiconductor layer is sandwiched between two gate electrodes. It is a transistor.

[0138] A bottom-gate transistor is a transistor that has a gate electrode below the semiconductor layer. do.

[0139] A top-gate transistor is a transistor that has a gate electrode on top of a semiconductor layer. do.

[0140] Both bottom-gate and top-gate transistors are single-gate It can be classified as a gate transistor.

[0141] The conductive layer 63 and the conductive layer 21 may be electrically isolated.

[0142] For example, by making the conductive layer 63 in a floating state, the semiconductor layer 31 The transistor can function as a bottom-gate transistor.

[0143] The floating state is, for example, a state in which the conductive layer 63 is not in contact with other conductive layers. be.

[0144] For example, by setting the potential of the conductive layer 63 to a predetermined potential, The threshold voltage of the transistor can be controlled.

[0145] When the transistor having the semiconductor layer 31 is an N-type transistor, the predetermined potential is a reference potential A lower potential is preferred.

[0146] When the transistor having the semiconductor layer 31 is a P-type transistor, the predetermined potential is a reference potential A higher potential is preferred.

[0147] By setting the potential of the conductive layer 63 to a predetermined potential, the transistor is made normally off. It becomes easier to do so.

[0148] The circuit has a reference potential.

[0149] A potential higher than the reference potential is defined as a high potential.

[0150] A potential lower than the reference potential is defined as a low potential.

[0151] The reference potential does not have to be 0V, but if the reference potential is 0V, the high potential is a positive voltage. A low potential is a negative potential.

[0152] In addition, it is preferable to form the conductive layer 63 in the same step as forming one electrode of the element.

[0153] When the conductive layer 63 is formed in the same process as one electrode of the element, the structure shown in FIG. It can be said that this structure makes effective use of the conductive layer formed in the same process as one of the electrodes.

[0154] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0155] (Fourth embodiment) A semiconductor having a structure capable of suppressing penetration of a substance containing hydrogen into an oxide semiconductor layer 1 shows an example of a conductor device.

[0156] FIG. 4A shows an example in which a conductive layer 63 is added to FIG. 1A.

[0157] FIG. 4B shows a state in which at least a part of the conductive layer 61 and a part of the semiconductor layer 31 are removed from FIG. This is an example of at least some overlap.

[0158] FIG. 5A shows an example in which a conductive layer 63 is added to FIG. 1B.

[0159] FIG. 5B shows a cross section of at least a part of the conductive layer 62 and a part of the semiconductor layer 32 in FIG. 1B. This is an example of at least some overlap.

[0160] FIG. 6A shows an example in which a conductive layer 63 is added to FIG. 2A.

[0161] FIG. 6B shows a state in which at least a part of the conductive layer 61 and a part of the semiconductor layer 31 are removed from FIG. 2A. This is an example of at least some overlap.

[0162] FIG. 7A shows an example in which a conductive layer 63 is added to FIG. 2B.

[0163] FIG. 7B shows a cross section of at least a part of the conductive layer 61 and a part of the semiconductor layer 31 in FIG. 2B. This is an example of at least some overlap.

[0164] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0165] (Embodiment 5) Figure 8 shows an example circuit.

[0166] The wiring L1 is electrically connected to the gate of the transistor Tr1.

[0167] The wiring L2 is electrically connected to either the source or the drain of the transistor Tr1. do.

[0168] The wiring L2 is electrically connected to either the source or the drain of the transistor Tr2. do.

[0169] The wiring L3 is electrically connected to the other of the source and drain of the transistor Tr2. do.

[0170] The line L3 is electrically connected to the gate of the transistor Tr2.

[0171] The wiring L4 is electrically connected to the other of the source and drain of the transistor Tr1. do.

[0172] At least a part of the wiring L1 functions as an input terminal of an inverter circuit or a buffer circuit. It is possible.

[0173] At least a part of the wiring L1 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0174] At least a part of the wiring L2 functions as an output terminal of an inverter circuit or a buffer circuit. It is possible.

[0175] At least a part of the wiring L2 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0176] At least a part of the wiring L3 has a function of being set to a first potential.

[0177] At least a part of the wiring L3 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0178] At least a part of the wiring L4 has a function of being set to a second potential.

[0179] At least a part of the wiring L4 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0180] The first potential is preferably different from the second potential.

[0181] The polarity of the transistor Tr1 is preferably the same as the polarity of the transistor Tr2. .

[0182] The transistor Tr1 and the transistor Tr2 are N-type transistors, and the first potential is If the second potential is greater than the first potential, the circuit of FIG. 8 can function as an inverter circuit. .

[0183] The transistor Tr1 and the transistor Tr2 are N-type transistors, and the first potential is If it is less than the second potential, the circuit of FIG. 8 can function as a buffer circuit.

[0184] The transistor Tr1 and the transistor Tr2 are P-type transistors, and the first potential is If it is greater than the second potential, the circuit of FIG. 8 can function as a buffer circuit.

[0185] The transistor Tr1 and the transistor Tr2 are P-type transistors, and the first potential is If the potential is less than the second potential, the circuit of FIG. 8 can function as an inverter circuit. .

[0186] When the circuit of FIG. 8 can function as an inverter circuit, the potential of the wiring L1 becomes Hi When the potential of the line L2 becomes gh, the potential of the line L2 becomes low.

[0187] When the circuit of FIG. 8 can function as an inverter circuit, the potential of the wiring L1 is Lo When the potential becomes w, the potential of the line L2 becomes High.

[0188] When the circuit of FIG. 8 can function as a buffer circuit, the potential of the wiring L1 becomes High. When the potential becomes h, the potential of the line L2 becomes High.

[0189] When the circuit of FIG. 8 can function as a buffer circuit, the potential of the wiring L1 is Low. When the potential of the line L1 is set to the high potential, the potential of the line L2 is set to the low potential.

[0190] When the first potential is smaller than the second potential, the first potential is a low potential and the second potential is a high potential. The potential is preferably a high potential.

[0191] When the first potential is greater than the second potential, the first potential is a high potential and the second potential is a low potential. The potential is preferably a low potential.

[0192] To stabilize the circuit operation, both transistor Tr1 and transistor Tr2 It is preferably normally off.

[0193] However, if the transistors Tr1 and Tr2 are P-type transistors, If transistor Tr1 is normally off and transistor Tr2 is normally on, This is preferable because the circuit operation is stable.

[0194] By making the transistor Tr1 or the transistor Tr2 have a dual gate structure, The on-state current of a transistor in the circuit can be increased.

[0195] In order to stabilize the circuit operation, the on-current of transistor Tr1 is It is preferable to make it larger than the on-current of r2.

[0196] Therefore, the transistor Tr1 is a dual-gate transistor, and the transistor Tr 2 is preferably a single gate transistor.

[0197] To stabilize circuit operation, it is preferable that the off-state current of transistor Tr1 is small. .

[0198] The transistor having an oxide semiconductor layer is different from the transistor having a silicon layer. The off-state current is comparatively small.

[0199] Therefore, the transistor Tr1 preferably includes an oxide semiconductor layer.

[0200] On the other hand, if you want to make the transistor Tr2 normally off, for example, It is necessary to control the threshold voltage of r2.

[0201] The transistor having a silicon-containing layer is a transistor having an oxide semiconductor layer. Compared to transistors, the threshold voltage is easier to control.

[0202] Specifically, by adding a donor element or an acceptor element to a layer containing silicon, Thus, the threshold voltage can be adjusted.

[0203] The addition of a donor element or an acceptor element is performed by ion doping or ion implantation. By doing so, the threshold voltage can be precisely controlled.

[0204] Therefore, it is preferable that the transistor Tr2 has a layer containing silicon.

[0205] Therefore, the transistor Tr1 has an oxide semiconductor layer, and the transistor Tr2 has a silicon It is preferable to have a layer having a con.

[0206] In order to reduce the number of processes, the semiconductor layer material of transistor Tr1 and transistor Tr The material of the second semiconductor layer may be the same as that of the first semiconductor layer.

[0207] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0208] (Embodiment 6) FIG. 9 is an example of a top view of a semiconductor device having the circuit shown in FIG.

[0209] FIG. 10A is an example of a cross-sectional view taken along the line AB in FIG.

[0210] FIG. 10B is an example of a cross-sectional view of the CD cross section of FIG.

[0211] FIG. 11A is an example of a cross-sectional view of the EF cross section of FIG.

[0212] FIG. 11B is an example of a cross-sectional view of the GH cross section of FIG.

[0213] FIG. 12 is an example of a cross-sectional view of a circuit in an element region formed in the same process as the circuits in FIGS. 9 to 11. be.

[0214] The element region is a region where elements are formed.

[0215] When the element is a display element, the element region can be called a pixel region.

[0216] 9 to 12 will be explained below.

[0217] The substrate 100 has an insulating surface.

[0218] A conductive layer 201 is provided on the insulating surface.

[0219] A conductive layer 202 is provided on the insulating surface.

[0220] A conductive layer 203 is provided on the insulating surface.

[0221] A conductive layer 251 is provided on the insulating surface.

[0222] An insulating layer 3 is formed on the conductive layer 201, the conductive layer 202, the conductive layer 203, and the conductive layer 251. 00.

[0223] A semiconductor layer 301 is provided on an insulating layer 300 .

[0224] A semiconductor layer 302 is provided on an insulating layer 300 .

[0225] A semiconductor layer 351 is provided on an insulating layer 300 .

[0226] The semiconductor layer 301 has a region overlapping with the conductive layer 201 .

[0227] The semiconductor layer 302 has a region overlapping with the conductive layer 202 .

[0228] The semiconductor layer 351 has a region overlapping with the conductive layer 251 .

[0229] The semiconductor layer 301 and the semiconductor layer 302 are separated, but the semiconductor layer 301 and the semiconductor layer 30 2 may be combined to form a single island-shaped semiconductor layer.

[0230] A conductive layer 401 is provided over a semiconductor layer 301 .

[0231] A conductive layer 402 is provided over the semiconductor layer 302 .

[0232] A conductive layer 403 is provided over the semiconductor layer 301 and the semiconductor layer 302 .

[0233] A conductive layer 451 is provided over the semiconductor layer 351 .

[0234] A conductive layer 452 is provided over the semiconductor layer 351 .

[0235] On the conductive layer 401, on the conductive layer 402, on the conductive layer 403, on the conductive layer 451, and on the conductive layer 45 2 has an insulating layer 500 on it.

[0236] A conductive layer 601 is provided on an insulating layer 500 .

[0237] A conductive layer 602 is provided on an insulating layer 500 .

[0238] A conductive layer 603 is provided on the insulating layer 500 .

[0239] A conductive layer 651 is provided on the insulating layer 500 .

[0240] In FIG. 9, the conductive layer 601, the conductive layer 602, the conductive layer 603, and the conductive layer 651 have light-transmitting properties. 6 shows an example in which the conductive layer 601, the conductive layer 602, the conductive layer 603, and the conductive layer 651 are The film may have light-blocking or reflective properties.

[0241] The conductive layer 601 has a region overlapping with the semiconductor layer 301 .

[0242] The conductive layer 601 is electrically connected to the conductive layer 201 .

[0243] The conductive layer 602 is electrically connected to the conductive layer 203 .

[0244] The conductive layer 602 is electrically connected to the conductive layer 403 .

[0245] The conductive layer 603 is electrically connected to the conductive layer 202 .

[0246] The conductive layer 603 is electrically connected to the conductive layer 402 .

[0247] The conductive layer 651 is electrically connected to the conductive layer 452 .

[0248] An insulating layer 700 is formed on the conductive layer 601, the conductive layer 602, the conductive layer 603, and the conductive layer 651. Has.

[0249] The functional layer 800 is provided on the insulating layer 700 and the conductive layer 651 .

[0250] A conductive layer 900 is provided on the functional layer 800 .

[0251] At least a part of the conductive layer 201 is, for example, the gate electrode of the transistor Tr1 in FIG. It can function as such.

[0252] At least a part of the conductive layer 201 can function as, for example, the wiring L1 in FIG. do.

[0253] At least a part of the conductive layer 202 is, for example, the gate electrode of the transistor Tr2 in FIG. It can function as such.

[0254] At least a part of the conductive layer 203 can function as, for example, the wiring L2 in FIG. do.

[0255] At least a part of the conductive layer 251 is used as, for example, a gate electrode of a transistor in the element region. It can function as such.

[0256] At least a part of the insulating layer 300 is, for example, the gate insulating film of the transistor Tr1 in FIG. It can function as.

[0257] At least a part of the insulating layer 300 is, for example, a gate insulating film of the transistor Tr2 in FIG. It can function as.

[0258] At least a part of the insulating layer 300 serves as, for example, a gate insulating film of a transistor in the element region. It can function as such.

[0259] At least a part of the semiconductor layer 301 has a channel type of, for example, the transistor Tr1 shown in FIG. It can function as a synthesis region.

[0260] At least a portion of the semiconductor layer 302 is, for example, a channel type of the transistor Tr2 in FIG. It can function as a synthesis region.

[0261] At least a part of the semiconductor layer 351 is used for forming a channel of a transistor in the device region, for example. It can function as a region.

[0262] At least a part of the conductive layer 401 is, for example, the source electrode or the gate electrode of the transistor Tr1 in FIG. can function as the other of the drain electrodes.

[0263] At least a part of the conductive layer 401 can function as, for example, the wiring L4 in FIG. do.

[0264] At least a portion of the conductive layer 402 may be, for example, the source electrode or the gate electrode of the transistor Tr2 in FIG. can function as the other of the drain electrodes.

[0265] At least a part of the conductive layer 402 can function as, for example, the wiring L3 in FIG. do.

[0266] At least a part of the conductive layer 403 is, for example, the source electrode or the gate electrode of the transistor Tr1 in FIG. can function as one of the drain electrodes.

[0267] At least a part of the conductive layer 403 is, for example, the source electrode or the gate electrode of the transistor Tr2 in FIG. can function as one of the drain electrodes.

[0268] At least a part of the conductive layer 403 can function as, for example, the wiring L2 in FIG. do.

[0269] At least a part of the conductive layer 451 is, for example, a source electrode of a transistor in the element region or It can function as one of the drain electrodes.

[0270] At least a part of the conductive layer 452 may be, for example, a source electrode of a transistor in the element region or It can function as the other of the drain electrodes.

[0271] At least a portion of the insulating layer 500 can function as, for example, an interlayer insulating film.

[0272] At least a part of the insulating layer 500 is, for example, the gate insulating film of the transistor Tr1 in FIG. It can function as.

[0273] At least a part of the conductive layer 601 is used as, for example, the gate electrode of the transistor Tr1 in FIG. It can function as such.

[0274] At least a part of the conductive layer 602 can function as, for example, the wiring L2 in FIG. do.

[0275] At least a portion of the conductive layer 603 is connected to the gate of the transistor Tr2 in FIG. It functions as a wiring that electrically connects the other of the source and drain of transistor Tr2. can be done.

[0276] At least a part of the conductive layer 651 can function as one electrode of the element in the element region. can.

[0277] In the case of an EL display device, at least a part of the insulating layer 700 functions as, for example, a partition wall. The partition wall is located between adjacent pixel electrodes.

[0278] The partition preferably comprises an organic material.

[0279] By including an organic substance in the partition wall, the partition wall can function as a planarizing film. .

[0280] In the case of an EL display device, the insulating layer 700 has an area that overlaps with an edge of the conductive layer 651 .

[0281] In the case of an EL display device, the insulating layer 700 has holes in the areas where it overlaps with the conductive layer 651 .

[0282] When a liquid crystal display device is to be manufactured, at least a part of the insulating layer 700 is used as, for example, an alignment film. It can function as such.

[0283] When at least a part of the insulating layer 700 is made to function as an alignment film, the entire conductive layer 651 It is preferable that the insulating layer 700 overlaps at least a portion of the insulating layer 700 .

[0284] The alignment film preferably comprises an organic material.

[0285] In the case of an EL display device, the functional layer 800 is, for example, an EL layer (a layer containing an organic compound). .

[0286] When a liquid crystal display device is to be manufactured, it is preferable to form a functional layer 800 on an insulating layer 700. .

[0287] In the case of a liquid crystal display device, the functional layer 800 is, for example, a liquid crystal layer.

[0288] The conductive layer 900 can function as, for example, the other electrode of the element.

[0289] The conductive layer 601 provides the transistor Tr1 with a dual gate structure. It is possible.

[0290] Since the transistor Tr2 is a single-gate transistor, the transistor Tr1 The on-current of the transistor Tr1 can be made larger than the on-current of the transistor Tr2.

[0291] It is preferable that the wiring L3 having the conductive layer 402 is electrically connected to a plurality of circuits.

[0292] The wiring L3 can be called a common wiring.

[0293] It is preferable that the wiring L4 having the conductive layer 401 is electrically connected to a plurality of circuits.

[0294] The wiring L4 can be called a common wiring.

[0295] For example, as shown in FIG. 9, it is preferable to place a plurality of circuits between the wiring L3 and the wiring L4. It's nice.

[0296] The wiring L1 preferably intersects with the wiring L3 or the wiring L4.

[0297] The wiring L2 preferably intersects with the wiring L3 or the wiring L4.

[0298] If the wiring L1 does not cross the wiring L3 and the wiring L4, the wiring L1 becomes very long.

[0299] If the wire L1 is very long, the resistance of the wire L1 becomes very high.

[0300] When the wiring L1 crosses the wiring L3 or the wiring L4, the wiring L1 can be shortened.

[0301] If the wire L2 does not cross the wires L3 and L4, the wire L2 becomes very long.

[0302] If the wire L2 is very long, the resistance of the wire L2 becomes very high.

[0303] When the wiring L2 crosses the wiring L3 or the wiring L4, the wiring L2 can be shortened.

[0304] For example, as shown in FIG. 9, by using the conductive layer 201 as the wiring L1, the wiring L1 can be crossed with the wiring L4.

[0305] For example, as shown in FIG. 9, the conductive layer 203, the conductive layer 403, and the conductive layer 602 are used as the wiring L2. By using the above, the wiring L2 can be made to cross the wiring L3.

[0306] When the conductive layer 402 and the conductive layer 202 are directly connected, holes are formed only in the insulating layer 300. A process is required.

[0307] For example, as shown in FIG. 9, the conductive layer 402 and the conductive layer 202 are electrically connected via the conductive layer 602. By connecting the layers together, the step of forming holes only in the insulating layer 300 becomes unnecessary.

[0308] By having at least one of the conductive layer 601, the conductive layer 602, and the conductive layer 603, Therefore, the conductive layer formed in the same process as one electrode of the element can be effectively utilized.

[0309] When the semiconductor layer 301 is an oxide semiconductor layer, the conductive layer 601 is provided, and thus the oxide semiconductor layer This can prevent substances containing hydrogen elements from penetrating into the nitride semiconductor layer.

[0310] By providing the conductive layer 601, the on-state current of a transistor in a circuit can be increased. This can be done.

[0311] A conductive layer is formed on the semiconductor layer 302 in the same process as one electrode of the element. do not have.

[0312] The semiconductor layer 302 is a silicon-containing layer that is resistant to a substance containing a hydrogen element. It is preferable to use

[0313] That is, the semiconductor layer 301 is an oxide semiconductor layer, and the semiconductor layer 302 is a layer containing silicon. It is preferable to set the following.

[0314] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0315] (Embodiment 7) Figure 13 shows an example of the circuit.

[0316] The wiring L1 is electrically connected to the gate of the transistor Tr1.

[0317] The wiring L2 is electrically connected to either the source or the drain of the transistor Tr1. do.

[0318] The wiring L2 is electrically connected to one terminal of the resistor R.

[0319] The wiring L3 is electrically connected to the other terminal of the resistor R.

[0320] The wiring L4 is electrically connected to the other of the source and drain of the transistor Tr1. do.

[0321] At least a part of the wiring L1 functions as an input terminal of an inverter circuit or a buffer circuit. It is possible.

[0322] At least a part of the wiring L1 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0323] At least a part of the wiring L2 functions as an output terminal of an inverter circuit or a buffer circuit. It is possible.

[0324] At least a part of the wiring L2 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0325] At least a part of the wiring L3 has a function of being set to a first potential.

[0326] At least a part of the wiring L3 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0327] At least a part of the wiring L4 has a function of being set to a second potential.

[0328] At least a part of the wiring L4 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0329] The first potential is preferably different from the second potential.

[0330] The polarity of the transistor Tr1 is not limited.

[0331] The transistor Tr1 is an N-type transistor, and the first potential is greater than the second potential. In this case, the circuit of FIG. 13 can function as an inverter circuit.

[0332] The transistor Tr1 is an N-type transistor, and the first potential is smaller than the second potential. In this case, the circuit of FIG. 13 can function as a buffer circuit.

[0333] The transistor Tr1 is a P-type transistor, and the first potential is greater than the second potential. In this case, the circuit of FIG. 13 can function as a buffer circuit.

[0334] The transistor Tr1 is a P-type transistor, and the first potential is smaller than the second potential. In this case, the circuit of FIG. 13 can function as an inverter circuit.

[0335] When the circuit of FIG. 13 can function as an inverter circuit, the potential of the wiring L1 is H When the potential of the wiring L1 becomes high, the potential of the wiring L2 becomes low.

[0336] When the circuit of FIG. 13 can function as an inverter circuit, the potential of the wiring L1 is When the potential becomes ow, the potential of the line L2 becomes high.

[0337] When the circuit of FIG. 13 can function as a buffer circuit, the potential of the wiring L1 becomes Hi When the potential of the line L2 becomes gh, the potential of the line L2 becomes High.

[0338] When the circuit of FIG. 13 can function as a buffer circuit, the potential of the wiring L1 is Lo When the potential becomes w, the potential of the wiring L2 becomes low.

[0339] When the first potential is smaller than the second potential, the first potential is a low potential and the second potential is a high potential. The potential is preferably a high potential.

[0340] When the first potential is greater than the second potential, the first potential is a high potential and the second potential is a low potential. The potential is preferably a low potential.

[0341] To stabilize the circuit operation, the resistance value when the transistor Tr1 is on must be It is preferable that the resistance value of the resistor R is smaller than that of the resistor R.

[0342] Therefore, it is preferable that the on-state current of the transistor Tr1 is large. Preferably, r1 is a dual gate structure.

[0343] To stabilize circuit operation, it is preferable that the off-state current of transistor Tr1 is small. .

[0344] The transistor having an oxide semiconductor layer is different from the transistor having a silicon layer. The off-state current is comparatively small.

[0345] Therefore, the transistor Tr1 preferably includes an oxide semiconductor layer.

[0346] The resistivity of a layer containing silicon can be adjusted more easily than that of a layer containing an oxide semiconductor layer. do.

[0347] Specifically, by adding a donor element or an acceptor element to a layer containing silicon, Thus, the resistivity can be adjusted.

[0348] The addition of a donor element or an acceptor element is performed by ion doping or ion implantation. By performing this process, precise control of the resistivity is possible.

[0349] Therefore, it is preferable that the resistor element R has a layer containing silicon.

[0350] Therefore, the transistor Tr1 has an oxide semiconductor layer, and the resistor R has silicon. It is preferable to have a layer that

[0351] In order to reduce the number of processes, the semiconductor layer material of the transistor Tr1 and the semiconductor of the resistor element R The material of the body layer may be the same.

[0352] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0353] (Embodiment 8) FIG. 14 is an example of a top view of a semiconductor device having the circuit shown in FIG.

[0354] FIG. 15 is an example of a cross-sectional view taken along the line AB in FIG.

[0355] 14 corresponds to an example in which the conductive layer 202 and the conductive layer 603 are omitted from FIG. 9, and therefore The explanation of repetition will be omitted.

[0356] At least a part of the semiconductor layer 302 functions as a resistor of the resistor element R of FIG. can be done.

[0357] Since the semiconductor layer 302 is a resistor, there is no gate electrode that overlaps the semiconductor layer 302. .

[0358] Specifically, the insulating layer 300 has a first region that overlaps the semiconductor layer 302 .

[0359] The insulating layer 500 has a second region that overlaps the semiconductor layer 302 .

[0360] The first region is in contact with the insulating surface.

[0361] The second region is in contact with the insulating layer 700 .

[0362] By providing the conductive layer 601 or the conductive layer 602, it is possible to form the conductive layer 601 or the conductive layer 602 in the same process as forming one electrode of the element. The formed conductive layer can be effectively utilized.

[0363] When the semiconductor layer 301 is an oxide semiconductor layer, the conductive layer 601 is provided. This can prevent substances containing hydrogen elements from penetrating into the semiconductor layer.

[0364] By providing the conductive layer 601, the on-state current of a transistor in a circuit can be increased. This can be done.

[0365] The resistance value when transistor Tr1 is in the off state is greater than the resistance value of resistor element R. is preferred.

[0366] Therefore, for example, as shown in FIG. 14, the direction of current flow in the transistor Tr1 is perpendicular to the direction of current flow. The width in the direction perpendicular to the direction in which current flows in the resistor element R is smaller than the width in the perpendicular direction (channel width). is preferably larger.

[0367] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0368] (Embodiment 9) Figure 16 shows an example of the circuit.

[0369] The wiring L1 is electrically connected to the gate of the transistor Tr1.

[0370] The wiring L2 is electrically connected to either the source or the drain of the transistor Tr1. do.

[0371] The wiring L2 is electrically connected to either the source or the drain of the transistor Tr2. do.

[0372] The line L2 is electrically connected to the gate of the transistor Tr2.

[0373] The wiring L3 is electrically connected to the other of the source and drain of the transistor Tr2. do.

[0374] The wiring L4 is electrically connected to the other of the source and drain of the transistor Tr1. do.

[0375] At least a part of the wiring L1 functions as an input terminal of an inverter circuit or a buffer circuit. It is possible.

[0376] At least a part of the wiring L1 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0377] At least a part of the wiring L2 functions as an output terminal of an inverter circuit or a buffer circuit. It is possible.

[0378] At least a part of the wiring L2 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0379] At least a part of the wiring L3 has a function of being set to a first potential.

[0380] At least a part of the wiring L3 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0381] At least a part of the wiring L4 has a function of being set to a second potential.

[0382] At least a part of the wiring L4 has a function of transmitting a signal, a voltage, or a current. It is possible.

[0383] The first potential is preferably different from the second potential.

[0384] The polarity of the transistor Tr1 is preferably the same as the polarity of the transistor Tr2. .

[0385] The transistor Tr1 and the transistor Tr2 are N-type transistors, and the first potential is If the second potential is greater than the first potential, the circuit of FIG. 16 can function as an inverter circuit. do.

[0386] The transistor Tr1 and the transistor Tr2 are N-type transistors, and the first potential is If the potential is less than the second potential, the circuit of FIG. 16 can function as a buffer circuit. .

[0387] The transistor Tr1 and the transistor Tr2 are P-type transistors, and the first potential is If the second potential is greater than the first potential, the circuit of FIG. 16 can function as a buffer circuit. .

[0388] The transistor Tr1 and the transistor Tr2 are P-type transistors, and the first potential is If the potential is less than the second potential, the circuit of FIG. 16 can function as an inverter circuit. do.

[0389] When the circuit of FIG. 16 can function as an inverter circuit, the potential of the wiring L1 is H When the potential of the wiring L1 becomes high, the potential of the wiring L2 becomes low.

[0390] When the circuit of FIG. 16 can function as an inverter circuit, the potential of the wiring L1 is When the potential becomes ow, the potential of the line L2 becomes high.

[0391] When the circuit of FIG. 16 can function as a buffer circuit, the potential of the wiring L1 becomes Hi When the potential of the line L2 becomes gh, the potential of the line L2 becomes High.

[0392] When the circuit of FIG. 16 can function as a buffer circuit, the potential of the wiring L1 is Lo When the potential becomes w, the potential of the wiring L2 becomes low.

[0393] When the first potential is smaller than the second potential, the first potential is a low potential and the second potential is a high potential. The potential is preferably a high potential.

[0394] When the first potential is greater than the second potential, the first potential is a high potential and the second potential is a low potential. The potential is preferably a low potential.

[0395] To stabilize the circuit operation, both transistor Tr1 and transistor Tr2 It is preferably normally off.

[0396] However, if the transistors Tr1 and Tr2 are N-type transistors, If transistor Tr1 is normally off and transistor Tr2 is normally on, This is preferable because the circuit operation is stable.

[0397] By making the transistor Tr1 or the transistor Tr2 have a dual gate structure, The on-state current of a transistor in the circuit can be increased.

[0398] In order to stabilize the circuit operation, the on-current of transistor Tr1 is It is preferable to make it larger than the on-current of r2.

[0399] Therefore, the transistor Tr1 is a dual-gate transistor, and the transistor Tr 2 is preferably a single gate transistor.

[0400] To stabilize circuit operation, it is preferable that the off-state current of transistor Tr1 is small. .

[0401] The transistor having an oxide semiconductor layer is different from the transistor having a silicon layer. The off-state current is comparatively small.

[0402] Therefore, the transistor Tr1 preferably includes an oxide semiconductor layer.

[0403] On the other hand, if you want to make the transistor Tr2 normally off, for example, It is necessary to control the threshold voltage of r2.

[0404] The transistor having a silicon-containing layer is a transistor having an oxide semiconductor layer. Compared to transistors, the threshold voltage is easier to control.

[0405] Specifically, by adding a donor element or an acceptor element to a layer containing silicon, Thus, the threshold voltage can be adjusted.

[0406] The addition of a donor element or an acceptor element is performed by ion doping or ion implantation. By doing so, the threshold voltage can be precisely controlled.

[0407] Therefore, it is preferable that the transistor Tr2 has a layer containing silicon.

[0408] Therefore, the transistor Tr1 has an oxide semiconductor layer, and the transistor Tr2 has a silicon It is preferable to have a layer having a con.

[0409] In order to reduce the number of processes, the semiconductor layer material of transistor Tr1 and transistor Tr The material of the second semiconductor layer may be the same as that of the first semiconductor layer.

[0410] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0411] (Embodiment 10) FIG. 17 is an example of a top view of a semiconductor device having the circuit shown in FIG.

[0412] FIG. 18 is an example of a cross-sectional view of the IJ cross section of FIG.

[0413] 17 corresponds to an example in which the connection point of the conductive layer 603 in FIG. 9 is changed, so The explanation will be omitted.

[0414] In FIG. 9, the conductive layer 603 is electrically connected to the conductive layer 402, but in FIG. 603 is electrically connected to the conductive layer 403 .

[0415] By having at least one of the conductive layer 601, the conductive layer 602, and the conductive layer 603, Therefore, the conductive layer formed in the same process as one electrode of the element can be effectively utilized.

[0416] When the semiconductor layer 301 is an oxide semiconductor layer, the conductive layer 601 is provided. This can prevent substances containing hydrogen elements from penetrating into the semiconductor layer.

[0417] By providing the conductive layer 601, the on-state current of a transistor in a circuit can be increased. This can be done.

[0418] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0419] (Embodiment 11) As shown in FIGS. 19, 20, and 21, the transistor Tr1 is a single-gate transistor. It can also be used as a jista.

[0420] FIG. 19 shows an example in which the transistor Tr1 in FIG. 9 is a single-gate transistor.

[0421] FIG. 20 shows an example in which the transistor Tr1 in FIG. 14 is a single-gate transistor. .

[0422] FIG. 21 shows an example in which the transistor Tr1 in FIG. 17 is a single-gate transistor. .

[0423] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0424] (Embodiment 12) FIG. 22 shows an example in which the circuit of FIG. 8 is applied to a part of the gate driver of an EL display device.

[0425] A repeated explanation of the connection relationship of the circuit in FIG. 8 will be omitted.

[0426] The line L2 is electrically connected to the gate of the transistor Tr3.

[0427] The wiring S is electrically connected to one of the source and drain of the transistor Tr3. .

[0428] The wiring V is electrically connected to one of the source and drain of the transistor Tr4. .

[0429] The other of the source or drain of the transistor Tr3 is connected to the gate of the transistor Tr4. are electrically connected.

[0430] The other of the source and drain of the transistor Tr4 is electrically connected to the light-emitting element EL. are.

[0431] The light-emitting element EL is, for example, an organic EL element, an inorganic EL element, an LED element, or the like.

[0432] Using elements other than light-emitting EL (liquid crystal elements, electrophoretic elements, memory elements, capacitive elements, etc.) is also good.

[0433] In order to shorten the wiring L1, it is preferable to make the wiring L1 cross the wiring L3.

[0434] In order to shorten the wiring L2, it is preferable to make the wiring L2 cross the wiring L4.

[0435] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0436] (Embodiment 13) FIG. 23 shows an example in which the circuit of FIG. 8 is applied to a part of the gate driver of a liquid crystal display device.

[0437] A repeated explanation of the connection relationship of the circuit in FIG. 8 will be omitted.

[0438] The line L2 is electrically connected to the gate of the transistor Tr5.

[0439] The wiring S is electrically connected to one of the source and drain of the transistor Tr5. .

[0440] The liquid crystal element LC is electrically connected to the other of the source and drain of the transistor Tr5. are.

[0441] Using elements other than liquid crystal elements LC (light-emitting elements, electrophoretic elements, memory elements, capacitive elements, etc.) is also good.

[0442] In order to shorten the wiring L1, it is preferable to make the wiring L1 cross the wiring L3.

[0443] In order to shorten the wiring L2, it is preferable to make the wiring L2 cross the wiring L4.

[0444] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0445] (Embodiment 14) FIG. 24 shows an example in which the circuit of FIG. 13 is applied to a part of the gate driver of an EL display device.

[0446] A repeated explanation of the connection relationship of the circuit in FIG. 13 will be omitted.

[0447] The line L2 is electrically connected to the gate of the transistor Tr3.

[0448] The wiring S is electrically connected to one of the source and drain of the transistor Tr3. .

[0449] The wiring V is electrically connected to one of the source and drain of the transistor Tr4. .

[0450] The other of the source or drain of the transistor Tr3 is connected to the gate of the transistor Tr4. are electrically connected.

[0451] The other of the source and drain of the transistor Tr4 is electrically connected to the light-emitting element EL. are.

[0452] The light-emitting element EL is, for example, an organic EL element, an inorganic EL element, an LED element, or the like.

[0453] Using elements other than light-emitting EL (liquid crystal elements, electrophoretic elements, memory elements, capacitive elements, etc.) is also good.

[0454] In order to shorten the wiring L1, it is preferable to make the wiring L1 cross the wiring L3.

[0455] In order to shorten the wiring L2, it is preferable to make the wiring L2 cross the wiring L4.

[0456] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0457] (Embodiment 15) FIG. 25 shows an example in which the circuit of FIG. 13 is applied to a part of the gate driver of a liquid crystal display device.

[0458] A repeated explanation of the connection relationship of the circuit in FIG. 13 will be omitted.

[0459] The line L2 is electrically connected to the gate of the transistor Tr5.

[0460] The wiring S is electrically connected to one of the source and drain of the transistor Tr5. .

[0461] The liquid crystal element LC is electrically connected to the other of the source and drain of the transistor Tr5. are.

[0462] Using elements other than liquid crystal elements LC (light-emitting elements, electrophoretic elements, memory elements, capacitive elements, etc.) is also good.

[0463] In order to shorten the wiring L1, it is preferable to make the wiring L1 cross the wiring L3.

[0464] In order to shorten the wiring L2, it is preferable to make the wiring L2 cross the wiring L4.

[0465] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0466] (Embodiment 16) FIG. 26 shows an example in which the circuit of FIG. 16 is applied to a part of the gate driver of an EL display device.

[0467] A repeated explanation of the connection relationship of the circuit in FIG. 16 will be omitted.

[0468] The line L2 is electrically connected to the gate of the transistor Tr3.

[0469] The wiring S is electrically connected to one of the source and drain of the transistor Tr3. .

[0470] The wiring V is electrically connected to one of the source and drain of the transistor Tr4. .

[0471] The other of the source or drain of the transistor Tr3 is connected to the gate of the transistor Tr4. are electrically connected.

[0472] The other of the source and drain of the transistor Tr4 is electrically connected to the light-emitting element EL. are.

[0473] The light-emitting element EL is, for example, an organic EL element, an inorganic EL element, an LED element, or the like.

[0474] Using elements other than light-emitting EL (liquid crystal elements, electrophoretic elements, memory elements, capacitive elements, etc.) is also good.

[0475] In order to shorten the wiring L1, it is preferable to make the wiring L1 cross the wiring L3.

[0476] In order to shorten the wiring L2, it is preferable to make the wiring L2 cross the wiring L4.

[0477] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0478] (Embodiment 17) FIG. 27 shows an example in which the circuit of FIG. 16 is applied to a part of the gate driver of a liquid crystal display device.

[0479] A repeated explanation of the connection relationship of the circuit in FIG. 16 will be omitted.

[0480] The line L2 is electrically connected to the gate of the transistor Tr5.

[0481] The wiring S is electrically connected to one of the source and drain of the transistor Tr5. .

[0482] The liquid crystal element LC is electrically connected to the other of the source and drain of the transistor Tr5. are.

[0483] Using elements other than liquid crystal elements LC (light-emitting elements, electrophoretic elements, memory elements, capacitive elements, etc.) is also good.

[0484] In order to shorten the wiring L1, it is preferable to make the wiring L1 cross the wiring L3.

[0485] In order to shorten the wiring L2, it is preferable to make the wiring L2 cross the wiring L4.

[0486] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0487] (Embodiment 18) FIG. 28 shows an example in which a conductive layer 604 is added to the structure shown in FIG.

[0488] FIG. 29 is an example of a cross-sectional view taken along the line AB in FIG.

[0489] FIG. 30 shows an example in which a conductive layer 604 is added to the structure shown in FIG.

[0490] FIG. 31 is an example of a cross-sectional view of the AB cross section of FIG.

[0491] FIG. 32 shows an example in which a conductive layer 604 is added to the structure shown in FIG.

[0492] FIG. 33 is an example of a cross-sectional view taken along the line AB in FIG.

[0493] When the semiconductor layer 302 is an oxide semiconductor layer, when H2O penetrates into the oxide semiconductor layer, the oxide The properties of the semiconductor layer change.

[0494] The conductive layer 604 prevents H2O from penetrating into the semiconductor layer 302. can be done.

[0495] When the semiconductor layer 302 has a channel formation region, the threshold voltage of the transistor is shifted. This can prevent the device from being overloaded.

[0496] When the semiconductor layer 302 is a resistor, the resistivity of the resistor is prevented from fluctuating. It is possible.

[0497] The conductive layer 604 shown in this embodiment mode is in a floating state.

[0498] The floating state is, for example, a state in which the conductive layer 604 is not in contact with other conductive layers. be.

[0499] Conductive layer 604 is not in contact with conductive layer 201 .

[0500] The conductive layer 604 is electrically isolated from the conductive layer 201 .

[0501] Conductive layer 604 is not in contact with conductive layer 202 .

[0502] The conductive layer 604 is electrically isolated from the conductive layer 202 .

[0503] Conductive layer 604 is not in contact with conductive layer 401 .

[0504] The conductive layer 604 is electrically isolated from the conductive layer 401 .

[0505] Conductive layer 604 is not in contact with conductive layer 402 .

[0506] The conductive layer 604 is electrically isolated from the conductive layer 402 .

[0507] Conductive layer 604 is not in contact with conductive layer 403 .

[0508] The conductive layer 604 is electrically isolated from the conductive layer 403 .

[0509] When the conductive layer 604 is not in a floating state, the conductive layer 604 is electrically connected to other conductive layers. You can also connect it to

[0510] Here, by forming the conductive layer 604 in an island shape, the conductive layer 604 and other conductive layers This can reduce the parasitic capacitance that occurs between the two.

[0511] On the other hand, in order to improve the function as a protective film against the penetration of H2O, the conductive layer 604 It is preferable that the area of ​​the overlapping portion between the semiconductor layer 302 and the insulating layer 304 is large.

[0512] For example, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 401 .

[0513] For example, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 402 .

[0514] For example, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 403 .

[0515] In this embodiment, the area of ​​the overlapping portion between conductive layer 604 and conductive layer 401 is zero.

[0516] The conductive layer 604 can be formed in the same step as the conductive layer 601 .

[0517] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0518] (Embodiment 19) FIG. 34 shows an example in which the transistor Tr2 is a top-gate transistor.

[0519] FIG. 35 is an example of a cross-sectional view taken along the line AB in FIG.

[0520] The conductive layer 601 has a region overlapping with the semiconductor layer 301 .

[0521] The conductive layer 604 has a region overlapping with the semiconductor layer 302 .

[0522] Therefore, when the semiconductor layer is an oxide semiconductor layer, the oxide semiconductor layer is It is possible to suppress the intrusion of substances.

[0523] The transistor Tr1 is a dual-gate transistor, and the transistor Tr2 is a top By using a flip-gate transistor, the on-current of transistor Tr1 is It can be made larger than the on-current of start Tr2.

[0524] Here, by forming the conductive layer 604 in an island shape, the conductive layer 604 and other conductive layers This can reduce the parasitic capacitance that occurs between the two.

[0525] On the other hand, in order to improve the function as a protective film against the penetration of H2O, the conductive layer 604 It is preferable that the area of ​​the overlapping portion between the semiconductor layer 302 and the insulating layer 304 is large.

[0526] For example, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 401 .

[0527] For example, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 402 .

[0528] For example, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 403 .

[0529] In this embodiment, the area of ​​the overlapping portion between conductive layer 604 and conductive layer 401 is zero.

[0530] The conductive layer 604 can be formed in the same step as the conductive layer 601 .

[0531] In this embodiment, the case of the circuit in FIG. 8 will be described, but the present invention can also be applied to other circuits.

[0532] For example, the conductive layer 604 may be electrically isolated from the conductive layer 402 and the conductive layer 604 may be electrically isolated from the conductive layer 402. By electrically connecting it to 403, the circuit of FIG. 16 can be fabricated.

[0533] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0534] (Embodiment 20) When the conductive layer 604 is a layer having heat dissipation properties, it can dissipate heat generated in the circuit. do.

[0535] When the conductive layer 604 is a layer having heat dissipation properties, the material of the semiconductor layer is not limited.

[0536] The heat dissipating layer may be made of gold, silver, copper, platinum, iron, aluminum, molybdenum, titanium, or titanium. Examples of suitable materials include, but are not limited to, tungsten.

[0537] For example, the thermal conductivity of gold is approximately 320 W / m·K.

[0538] For example, the thermal conductivity of silver is approximately 420 W / m·K.

[0539] For example, the thermal conductivity of copper is approximately 398 W / m·K.

[0540] For example, the thermal conductivity of platinum is approximately 70 W / m·K.

[0541] For example, the thermal conductivity of iron is approximately 84 W / m·K.

[0542] For example, the thermal conductivity of aluminum is approximately 236 W / m·K.

[0543] For example, the thermal conductivity of molybdenum is approximately 139 W / m·K.

[0544] For example, the thermal conductivity of titanium is approximately 21.9 W / m·K.

[0545] For example, the thermal conductivity of tungsten is approximately 177 W / m·K.

[0546] Gold, silver, copper, and aluminum have particularly high thermal conductivity.

[0547] The higher the thermal conductivity, the better the heat dissipation, so it is recommended to use a material with a thermal conductivity of 150 W / m K or higher. Preferred.

[0548] Gold alloy film, silver alloy film, copper alloy film, and aluminum alloy film also have a thermal conductivity of 150 W / m·K or more has a rate.

[0549] The conductive layer 604 may have a single layer structure or a multilayer structure.

[0550] When the conductive layer 604 has a laminated structure, it is sufficient that it has at least one layer having heat dissipation properties. .

[0551] When the conductive layer 604 is used as a layer having heat dissipation properties, the area of ​​the conductive layer 604 is preferably large. is preferred.

[0552] In addition, when the conductive layer 604 is used as a layer having heat dissipation properties, the insulating layer 500 is Using a high-quality material is preferable because it enhances the heat dissipation effect.

[0553] The insulating layer 500 may be a film containing silicon nitride, a film containing aluminum oxide, a film containing diamond, or the like. Although a film containing dry carbon, a film containing aluminum nitride, etc. can be used, Not determined.

[0554] For example, the thermal conductivity of silicon nitride is approximately 20 W / m·K.

[0555] For example, the thermal conductivity of aluminum oxide is approximately 23 W / m·K.

[0556] Aluminum oxide has a high blocking effect on H2O.

[0557] For example, the thermal conductivity of diamond-like carbon is approximately 400 to 1800 W / m K. be.

[0558] For example, the thermal conductivity of aluminum nitride is approximately 170 to 200 W / m·K.

[0559] The higher the thermal conductivity, the better the heat dissipation, so it is recommended to use a material with a thermal conductivity of 150 W / m K or higher. Preferred.

[0560] The insulating layer 500 may have a single layer structure or a multilayer structure.

[0561] When the insulating layer 500 has a laminated structure, it is sufficient that it has at least one layer having heat dissipation properties. .

[0562] For reference, the thermal conductivity of acrylic is 0.2 W / m·K.

[0563] For reference, the thermal conductivity of epoxy is 0.21 W / m·K.

[0564] For reference, the thermal conductivity of silicon dioxide is 8 W / m·K.

[0565] FIG. 36 shows an example in which the conductive layer 604 is arranged so as to overlap the entire circuit.

[0566] The semiconductor layer generates heat more easily than the conductive layer.

[0567] Therefore, it is preferable to arrange the conductive layer 604 so as to overlap at least the semiconductor layer.

[0568] The larger the area of ​​the conductive layer 604, the higher the heat dissipation effect.

[0569] On the other hand, if the conductive layer 604 overlaps with another conductive layer, the occurrence of parasitic capacitance becomes a problem.

[0570] Therefore, it is preferable to place the conductive layer 604 in a region where it does not overlap with other conductive layers.

[0571] In FIG. 36, the conductive layer 604 has a plurality of holes.

[0572] By disposing the conductive layer 601 inside the hole of the conductive layer 604, the conductive layer 601 and the conductive layer 604 are electrically connected. This prevents short circuits with the layer 604.

[0573] By disposing the conductive layer 602 inside the hole of the conductive layer 604, the conductive layer 602 and the conductive layer 604 are electrically connected. This prevents short circuits with the layer 604.

[0574] By disposing the conductive layer 603 inside the hole of the conductive layer 604, the conductive layer 603 and the conductive layer 604 are electrically connected. This prevents short circuits with the layer 604.

[0575] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0576] (Embodiment 21) In FIG. 36, the conductive layer 604 has an area overlapping with the conductive layer 401 .

[0577] Therefore, in FIG. 36, the parasitic capacitance between the conductive layer 604 and the conductive layer 401 becomes a problem. This may be the case.

[0578] In FIG. 36, conductive layer 604 has an area that overlaps conductive layer 402 .

[0579] Therefore, in FIG. 36, the parasitic capacitance between the conductive layer 604 and the conductive layer 402 becomes a problem. This may be the case.

[0580] On the other hand, in order to improve the function as a protective film against the penetration of H2O, the conductive layer 604 It is preferable that the area of ​​the overlapping portion between the semiconductor layer 302 and the insulating layer 304 is large.

[0581] Therefore, as shown in FIG. 37, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area be larger than the area of ​​the overlapping portion between the conductive layer 604 and the conductive layer 401 .

[0582] 37, the area of ​​the overlapping portion between the conductive layer 604 and the semiconductor layer 302 is It is preferable that the area be larger than the area of ​​the overlapping portion between the layer 604 and the conductive layer 402 .

[0583] The conductive layer 401 and the conductive layer 402 each have a first region (wiring portion) having a longitudinal direction. It can be said that the first region has a plurality of second regions (protrusions) adjacent to it.

[0584] In FIG. 37, the first region of the conductive layer 401 and the first region (wiring portion) of the conductive layer 402 are It can be said that the conductive layer 604 is located in the region.

[0585] At least some of the plurality of second regions (protrusions) are source electrodes or drain electrodes of transistors. It can function as an electrode.

[0586] The area of ​​the first region is larger than the area of ​​the second region.

[0587] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0588] (Embodiment 22) The conductive layer 604 is electrically connected to either the conductive layer 401 or the conductive layer 402. Therefore, the conductive layer 604 can be used as an auxiliary wiring.

[0589] FIG. 38 shows a structure in which the conductive layer 604 is electrically connected to the conductive layer 401 through a plurality of holes in the insulating layer 500. This is an example of electrical connection.

[0590] FIG. 39 shows a structure in which the conductive layer 604 is electrically connected to the conductive layer 402 through a plurality of holes in the insulating layer 500. This is an example of electrical connection.

[0591] In FIG. 38 or 39, a plurality of holes are provided at the intersections of the wires.

[0592] When the conductive layer 604 has a region overlapping with the semiconductor layer 302, the transistor Tr2 is an N-type In the case of a transistor, to prevent the transistor Tr2 from always being in the on state, The conductive layer 604 is preferably electrically connected to a conductive layer that is at a low potential.

[0593] When the conductive layer 604 has a region overlapping with the semiconductor layer 302, the transistor Tr2 is a P-type In the case of a transistor, to prevent the transistor Tr2 from always being in the on state, The conductive layer 604 is preferably electrically connected to a conductive layer that has a high potential.

[0594] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0595] (Embodiment 23) FIG. 40 shows the structure in which the conductive layer 603 and the conductive layer 604 in FIG. 39 are combined into one conductive layer. This is an example.

[0596] Even if the conductive layer 603 and the conductive layer 604 are combined into one conductive layer, there is no problem in circuit operation. do not have.

[0597] When the conductive layer 604 is used as a layer having heat dissipation properties, the area of ​​the conductive layer 604 becomes large. Therefore, the heat dissipation effect is increased, which is preferable.

[0598] Since the area of ​​the conductive layer 604 is large, when the conductive layer 604 is used as an auxiliary wiring, the resistance The resistance can be reduced.

[0599] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0600] (Embodiment 24) When the transistor Tr1 is a single-gate transistor, the conductive layer 601 is not necessary. This becomes:

[0601] Therefore, it is preferable to provide a conductive layer 605 instead of the conductive layer 601 as shown in FIG.

[0602] When the semiconductor layer 301 is an oxide semiconductor layer, the conductive layer 605 is provided. The penetration of H2O into the layer 301 can be suppressed.

[0603] The conductive layer 605 shown in this embodiment mode is in a floating state.

[0604] The floating state is, for example, a state in which the conductive layer 605 is not in contact with other conductive layers. be.

[0605] Conductive layer 605 is not in contact with conductive layer 201 .

[0606] The conductive layer 605 is electrically isolated from the conductive layer 201 .

[0607] Conductive layer 605 is not in contact with conductive layer 202 .

[0608] The conductive layer 605 is electrically isolated from the conductive layer 202 .

[0609] Conductive layer 605 is not in contact with conductive layer 401 .

[0610] The conductive layer 605 is electrically isolated from the conductive layer 401 .

[0611] Conductive layer 605 is not in contact with conductive layer 402 .

[0612] The conductive layer 605 is electrically isolated from the conductive layer 402 .

[0613] Conductive layer 605 is not in contact with conductive layer 403 .

[0614] The conductive layer 605 is electrically isolated from the conductive layer 403 .

[0615] When the conductive layer 605 is not in a floating state, the conductive layer 605 is electrically connected to other conductive layers. Alternatively, the device may be connected to the network.

[0616] Here, by forming the conductive layer 605 in an island shape, the conductive layer 605 and other conductive layers This can reduce the parasitic capacitance that occurs between the two.

[0617] On the other hand, in order to improve the function as a protective film against the penetration of H2O, the conductive layer 605 It is preferable that the area of ​​the overlapping portion between the semiconductor layer 301 and the insulating layer 302 is large.

[0618] For example, the area of ​​the overlapping portion between the conductive layer 605 and the semiconductor layer 301 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 401 .

[0619] For example, the area of ​​the overlapping portion between the conductive layer 605 and the semiconductor layer 301 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 402 .

[0620] For example, the area of ​​the overlapping portion between the conductive layer 605 and the semiconductor layer 301 is It is preferable that the area is larger than the area of ​​the overlapping portion with layer 403 .

[0621] In this embodiment, the area of ​​the overlapping portion between the conductive layer 605 and the conductive layer 402 is zero.

[0622] The conductive layer 605 can be formed in the same step as the conductive layer 604 .

[0623] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0624] (Embodiment 25) In FIG. 41, conductive layer 604 and conductive layer 605 may be combined into one conductive layer.

[0625] For example, as shown in FIG. 42, the conductive layer 604 may overlap the entire circuit.

[0626] The conductive layer 604 is formed so as not to short-circuit with the conductive layer 602 or the conductive layer 603. A plurality of holes are provided in the

[0627] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0628] (Embodiment 26) The resistance element R in FIG. 13 may be a fixed resistance or a variable resistance.

[0629] An example of a variable resistor is a transistor.

[0630] For example, as shown in FIG. 43, the resistor element R is a transistor Tr2, and the third voltage of the wiring L5 is The resistance value may be adjusted by adjusting the position.

[0631] The line L5 is electrically connected to the gate of the transistor Tr2.

[0632] At least a part of the wiring L5 has a function capable of transmitting a signal, a voltage, or a current. It can have the ability.

[0633] The transistor Tr2 may be either normally off or normally on.

[0634] To stabilize circuit operation, it is preferable that the off-state current of transistor Tr1 is small. .

[0635] The transistor having an oxide semiconductor layer is different from the transistor having a silicon layer. The off-state current is comparatively small.

[0636] Therefore, the transistor Tr1 preferably includes an oxide semiconductor layer.

[0637] On the other hand, if you want to make the transistor Tr2 normally off, for example, It is necessary to control the threshold voltage of r2.

[0638] The transistor having a silicon-containing layer is a transistor having an oxide semiconductor layer. Compared to transistors, the threshold voltage is easier to control.

[0639] Specifically, by adding a donor element or an acceptor element to a layer containing silicon, Thus, the threshold voltage can be adjusted.

[0640] The addition of a donor element or an acceptor element is performed by ion doping or ion implantation. By doing so, the threshold voltage can be precisely controlled.

[0641] Therefore, it is preferable that the transistor Tr2 has a layer containing silicon.

[0642] Therefore, the transistor Tr1 has an oxide semiconductor layer, and the transistor Tr2 has a silicon It is preferable to have a layer having a con.

[0643] However, the material of the semiconductor layer of the transistor Tr1 and the material of the semiconductor layer of the transistor Tr2 are By making the same, the number of processes can be reduced. The material of the semiconductor layer and the material of the semiconductor layer of the transistor Tr2 may be selected appropriately as needed. stomach.

[0644] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0645] (Embodiment 27) The novel cross-sectional structures described in the other embodiments will be summarized below.

[0646] First, FIG. 44(A) will be described.

[0647] The substrate 100 has an insulating surface.

[0648] A conductive layer 201 is provided on the insulating surface.

[0649] An insulating layer 300 is provided on the conductive layer 201 .

[0650] A semiconductor layer 301 is provided on an insulating layer 300 .

[0651] A semiconductor layer 302 is provided on an insulating layer 300 .

[0652] The semiconductor layer 301 has a region overlapping with the conductive layer 201 .

[0653] The conductive layer 201 has a region overlapping with the channel formation region of the transistor Tr1.

[0654] A conductive layer 401 is provided over a semiconductor layer 301 .

[0655] A conductive layer 402 is provided over the semiconductor layer 302 .

[0656] A conductive layer 403 is provided over the semiconductor layer 301 and the semiconductor layer 302 .

[0657] An insulating layer 500 is provided over the conductive layer 401, the conductive layer 402, and the conductive layer 403.

[0658] A conductive layer 601 is provided on an insulating layer 500 .

[0659] The conductive layer 601 has a region overlapping with the semiconductor layer 301 .

[0660] The conductive layer 601 has a region overlapping with the channel formation region of the transistor Tr1.

[0661] An insulating layer 700 is provided on a conductive layer 601 .

[0662] The insulating layer 700 is not an essential component.

[0663] FIG. 44(B) is an example in which a conductive layer 202 is added to FIG. 44(A).

[0664] The conductive layer 202 can be formed in the same step as the conductive layer 201 .

[0665] The conductive layer 202 has the same material as the conductive layer 201 .

[0666] The semiconductor layer 302 has a region overlapping with the conductive layer 202 .

[0667] The conductive layer 202 has a region overlapping with the channel formation region of the transistor Tr2.

[0668] FIG. 44(C) is an example in which a conductive layer 604 is added to FIG. 44(A).

[0669] FIG. 44(D) is an example in which a conductive layer 604 is added to FIG. 44(B).

[0670] The conductive layer 604 can be formed in the same step as the conductive layer 601 .

[0671] The conductive layer 604 has the same material as the conductive layer 601 .

[0672] The semiconductor layer 302 has a region overlapping with the conductive layer 604 .

[0673] The conductive layer 604 has a region overlapping with the channel formation region of the transistor Tr2.

[0674] This embodiment is also applicable to circuits other than inverter circuits and buffer circuits.

[0675] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0676] (Embodiment 28) The semiconductor layer 301 and the semiconductor layer 302 may be combined into one semiconductor layer.

[0677] FIG. 45(A) shows, for example, a semiconductor layer 301 and a semiconductor layer 302 of FIG. 44(A) joined together. Here is an example.

[0678] FIG. 45(B) shows, for example, a structure in which the semiconductor layer 301 and the semiconductor layer 302 in FIG. 44(B) are bonded together. Here is an example.

[0679] FIG. 45(C) shows, for example, a structure in which the semiconductor layer 301 and the semiconductor layer 302 in FIG. 44(C) are joined together. Here is an example.

[0680] FIG. 45(D) shows, for example, a structure in which the semiconductor layer 301 and the semiconductor layer 302 in FIG. 44(D) are joined together. Here is an example.

[0681] First, FIG. 45(A) will be described.

[0682] The substrate 100 has an insulating surface.

[0683] A conductive layer 201 is provided on the insulating surface.

[0684] An insulating layer 300 is provided on the conductive layer 201 .

[0685] A semiconductor layer 301 is provided on an insulating layer 300 .

[0686] The semiconductor layer 301 has a region overlapping with the conductive layer 201 .

[0687] The conductive layer 201 has a region overlapping with the channel formation region of the transistor Tr1.

[0688] A conductive layer 401 is provided over a semiconductor layer 301 .

[0689] A conductive layer 402 is provided over the semiconductor layer 301 .

[0690] A conductive layer 403 is provided over the semiconductor layer 301 .

[0691] An insulating layer 500 is provided over the conductive layer 401, the conductive layer 402, and the conductive layer 403.

[0692] A conductive layer 601 is provided on an insulating layer 500 .

[0693] The conductive layer 601 has a region overlapping with the semiconductor layer 301 .

[0694] The conductive layer 601 has a region overlapping with the channel formation region of the transistor Tr1.

[0695] An insulating layer 700 is provided on a conductive layer 601 .

[0696] The insulating layer 700 is not an essential component.

[0697] FIG. 45(B) is an example in which a conductive layer 202 is added to FIG. 45(A).

[0698] The conductive layer 202 can be formed in the same step as the conductive layer 201 .

[0699] The conductive layer 202 has the same material as the conductive layer 201 .

[0700] The semiconductor layer 301 has a region overlapping with the conductive layer 202 .

[0701] The conductive layer 201 has a region overlapping with the channel formation region of the transistor Tr2.

[0702] FIG. 45(C) is an example in which a conductive layer 604 is added to FIG. 45(A).

[0703] FIG. 45(D) is an example in which a conductive layer 604 is added to FIG. 45(B).

[0704] The conductive layer 604 can be formed in the same step as the conductive layer 601 .

[0705] The conductive layer 604 has the same material as the conductive layer 601 .

[0706] The semiconductor layer 301 has a region overlapping with the conductive layer 604 .

[0707] The conductive layer 604 has a region overlapping with the channel formation region of the transistor Tr2.

[0708] The conductive layer 403 is located between the conductive layer 401 and the conductive layer 402 .

[0709] The semiconductor layer 301 has a first region that overlaps with the conductive layer 401 .

[0710] The semiconductor layer 301 has a second region that overlaps with the conductive layer 402 .

[0711] The semiconductor layer 301 has a third region that overlaps with the conductive layer 403 .

[0712] The semiconductor layer 301 has a fourth region between the first region and the third region.

[0713] The semiconductor layer 301 has a fifth region between the second region and the third region.

[0714] The channel forming region of the transistor Tr1 has at least a fourth region.

[0715] The channel forming region of the transistor Tr2 has at least a fifth region.

[0716] The resistor of the resistive element R has at least a fifth region.

[0717] This embodiment is also applicable to circuits other than inverter circuits and buffer circuits.

[0718] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0719] (Embodiment 29) 22 to 27, the wiring S is one of the source or drain of the transistor in the element region. It is electrically connected to the

[0720] The output terminal (wire L2) of the inverter circuit or buffer circuit is electrically connected to the wire S. is also good.

[0721] That is, an inverter circuit or a buffer circuit may be used as part of the source driver.

[0722] FIG. 46 shows a circuit diagram of an inverter circuit or a buffer circuit in which the output terminal (wire L2) is electrically connected to the wire S. 1 is an example of a wiring structure for connecting to

[0723] In this case, the wiring L2 corresponds to the wiring S.

[0724] For example, FIG. 46(A) has a conductive layer 411.

[0725] The conductive layer 411 can be formed in the same step as the conductive layers 402 and 403 .

[0726] At least a portion of the conductive layer 411 can function as, for example, the wiring L2.

[0727] The conductive layer 602 is electrically connected to the conductive layer 403 .

[0728] The conductive layer 602 is electrically connected to the conductive layer 411 .

[0729] Conductive layer 602 intersects with conductive layer 402 .

[0730] The conductive layer 602 can be formed in the same process as one of the electrodes of the element.

[0731] For example, FIG. 46B shows an example in which the conductive layer 402 is formed into a plurality of island-shaped conductive layers.

[0732] The plurality of island-shaped conductive layers includes, for example, a conductive layer 402a and a conductive layer 402b.

[0733] It has a conductive layer 611 formed in the same process as one of the electrodes of the element.

[0734] The conductive layer 611 is electrically connected to the conductive layer 402a.

[0735] The conductive layer 611 is electrically connected to the conductive layer 402b.

[0736] Conductive layer 611 intersects with conductive layer 403 .

[0737] At least a portion of the conductive layer 402a can function as, for example, the wiring L4.

[0738] At least a part of the conductive layer 402a is, for example, a source electrode or a drain electrode of the transistor Tr2. It can function as the other of the rain electrodes.

[0739] At least a portion of the conductive layer 402b can function as, for example, the wiring L4.

[0740] At least a part of the conductive layer 403 can function as, for example, the wiring L2.

[0741] At least a portion of the conductive layer 611 can function as, for example, the wiring L4.

[0742] In addition, when an inverter circuit or a buffer circuit is used as part of the gate driver, An example of the structure is shown in Figure 46(C).

[0743] FIG. 46(C) shows a case where the conductive layer 203 does not cross the conductive layer 402, and the conductive layer 602 is connected to the conductive layer 402. This is an example of crossing with 402.

[0744] As described above, it is possible to effectively utilize the conductive layer formed in the same process as one electrode of the element. can.

[0745] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above.

[0746] (Embodiment 30)

[0747] The substrates are glass substrates, quartz substrates, metal substrates, semiconductor substrates, resin substrates (plastic substrates) ) and the like can be used, but are not limited to these.

[0748] A base insulating film may be formed on the substrate.

[0749] The substrate preferably has an insulating surface.

[0750] A glass substrate, a quartz substrate, a resin substrate, etc. have an insulating surface.

[0751] Metal substrates, semiconductor substrates, etc. do not have insulating surfaces, so forming an insulating base layer It is possible to have a more insulating surface.

[0752] The substrate may be flexible.

[0753] When a glass substrate is made thin, it becomes flexible.

[0754] The resin substrate is flexible.

[0755] The insulating layer can be made of any material as long as it has insulating properties.

[0756] The insulating layer may have a single layer structure or a multilayer structure.

[0757] Examples of insulating layers include insulating layers containing inorganic substances and insulating layers containing organic substances. Not limited.

[0758] The insulating layer containing an inorganic material is, for example, a film containing silicon oxide or a film containing silicon nitride. film, film having aluminum nitride, film having aluminum oxide, film having hafnium oxide Examples of the membrane include, but are not limited to, a membrane.

[0759] Examples of insulating layers containing organic materials include films containing polyimide and films containing acrylic. Examples of suitable materials include, but are not limited to, siloxane-based films, epoxy-based films, and the like.

[0760] The insulating layer that can function as a gate insulating film must be an insulating layer containing an inorganic material. is preferred.

[0761] The conductive layer can be made of any material that is conductive.

[0762] The conductive layer may have a single layer structure or a multilayer structure.

[0763] The conductive layer may be, but is not limited to, a film containing a metal, a film containing a transparent conductor, or the like.

[0764] Examples of metals include aluminum, titanium, molybdenum, tungsten, chromium, Examples include, but are not limited to, gold, silver, copper, alkali metals, and alkaline earth metals.

[0765] Examples of transparent conductors include indium tin oxide and indium zinc oxide. Not limited.

[0766] Metals have opaque or reflective properties.

[0767] The transparent conductor has light-transmitting properties.

[0768] When one electrode of the element is transparent, light can be extracted from the electrode. Cut.

[0769] When the other electrode of the element is transparent, light can be extracted from the other electrode of the element. Cut.

[0770] The semiconductor layer can be made of any material that has semiconducting properties.

[0771] The semiconductor layer may have a single layer structure or a multilayer structure.

[0772] The semiconductor layer may be, but is not limited to, an oxide semiconductor layer or a semiconductor layer other than an oxide semiconductor layer. stomach.

[0773] Semiconductor layers other than oxide semiconductor layers include layers containing silicon and organic semiconductor layers. is not limited to.

[0774] Examples of the layer containing silicon include a silicon film, a silicon germanium film, and a silicon carbide film. These include, but are not limited to:

[0775] Even if a silicon film containing impurities is provided between the silicon-containing layer and the source electrode, good.

[0776] A silicon film containing impurities is provided between the silicon-containing layer and the drain electrode. is also good.

[0777] The impurities include donor elements and acceptor elements.

[0778] The donor element for the silicon film may be, but is not limited to, phosphorus.

[0779] Acceptor elements for silicon films include, but are not limited to, boron.

[0780] An N-type transistor can be fabricated by using a silicon film containing a donor element.

[0781] Using a silicon film containing an acceptor element, a P-type transistor can be fabricated. Cut.

[0782] The oxide semiconductor layer is a film containing an oxide semiconductor material.

[0783] The oxide semiconductor layer is not limited as long as it is a film containing metal and oxygen.

[0784] For example, a film containing indium and oxygen, a film containing zinc and oxygen, a film containing tin and oxygen, etc. can function as an oxide semiconductor layer.

[0785] For example, the oxide semiconductor layer may be an indium oxide film, a tin oxide film, or a zinc oxide film. is not limited to.

[0786] For example, the oxide semiconductor layer may be an In-Zn oxide film, an Sn-Zn oxide film, or an Al -Zn-based oxide film, Zn-Mg-based oxide film, Sn-Mg-based oxide film, In-Mg-based oxide film Examples of the material include, but are not limited to, an In-Ga oxide film and an In-Ga oxide film.

[0787] The AB-based oxide film (A and B are elements) means a film containing A, B, and oxygen.

[0788] For example, the oxide semiconductor layer may be an In—Ga—Zn-based oxide film, an In—Sn- Zn-based oxide film, Sn-Ga-Zn-based oxide film, In-Al-Zn-based oxide film, In-H f-Zn oxide film, In-La-Zn oxide film, In-Ce-Zn oxide film, In -Pr-Zn oxide film, In-Nd-Zn oxide film, In-Sm-Zn oxide film, In-Eu-Zn oxide film, In-Gd-Zn oxide film, In-Tb-Zn oxide Film, In-Dy-Zn oxide film, In-Ho-Zn oxide film, In-Er-Zn acid oxide film, In-Tm-Zn oxide film, In-Yb-Zn oxide film, In-Lu-Zn There are limited types of oxide films, such as Al-Ga-Zn oxide films and Sn-Al-Zn oxide films. It will not be done.

[0789] An ABC oxide film (A, B, and C are elements) means a film containing A, B, C, and oxygen. Taste.

[0790] For example, the oxide semiconductor layer may be an In-Sn-Ga-Zn oxide film, an In-Hf-G a-Zn oxide film, In-Al-Ga-Zn oxide film, In-Sn-Al-Zn acid oxide film, In-Sn-Hf-Zn oxide film, In-Hf-Al-Zn oxide film, etc. but is not limited to.

[0791] ABCD oxide film (A, B, C, D are elements) is a film made of A, B, C, D and oxygen. It means a membrane having

[0792] As the oxide semiconductor layer, a film containing indium, gallium, zinc, and oxygen is particularly preferable. It's nice.

[0793] When an oxide semiconductor layer is used, an n-type transistor can be manufactured.

[0794] The oxide semiconductor layer preferably has a crystal structure.

[0795] The crystal is oriented so that the C-axis direction is perpendicular to the surface of the oxide semiconductor layer or the substrate. preferable.

[0796] The crystals with the C-axis oriented perpendicular to the surface of the oxide semiconductor layer or substrate are called CAAC (C This is called an Axis Aligned Crystal.

[0797] The angle between the C axis of the crystal and the surface of the oxide semiconductor layer or the substrate is preferably 90 degrees, but it is also preferable that the angle be 80 degrees. It may be between 100°C and 100°C.

[0798] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed by a sputtering method. In the first method, the substrate temperature during film formation is set to 200° C. or higher and 450° C. or lower.

[0799] In the first method, CAAC is formed on the lower and upper layers of an oxide semiconductor layer.

[0800] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed, and then a 65 The second method involves heat treatment at 0°C or above for at least 3 minutes.

[0801] In the second method, a CAAC is formed at least on the upper layer of the oxide semiconductor layer (second method Pattern of Law A).

[0802] In the second method, the thickness of the oxide semiconductor layer is reduced, so that the lower and upper layers A CAAC can be formed (pattern B of the second method).

[0803] As an example of a method for producing CAAC, the first oxide film formed by pattern B of the second method is There is a third method in which a second oxide semiconductor layer is formed on the oxide semiconductor layer.

[0804] The method for forming the oxide semiconductor layer in the second and third methods is not limited to the sputtering method. Not determined.

[0805] By the first to third methods, the angle between the C axis and the surface of the oxide semiconductor layer or the substrate is 80 degrees. Crystals can be formed that are above 100 degrees Celsius or below.

[0806] In the first to third methods, an oxide semiconductor layer having a CAAC at least on the upper layer (surface) is formed. It can be formed.

[0807] The layer containing an organic compound preferably has at least a light-emitting layer.

[0808] The elements include display elements (liquid crystal elements, light-emitting elements, electrophoretic elements, etc.), memory elements, and capacitor elements. There is but is not limited to.

[0809] When describing "B above A," it means that at least a part of B is located above A. Taste.

[0810] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above. (Embodiment 31)

[0811] A semiconductor device is a device that has an element that includes a semiconductor.

[0812] The elements having semiconductors include, for example, transistors, resistors, capacitors, diodes, etc. be.

[0813] The transistor is preferably, but not limited to, a field effect transistor.

[0814] The transistor is preferably, but not limited to, a thin film transistor.

[0815] The transistor may be formed using a silicon wafer, an SOI substrate, or the like.

[0816] Examples of the semiconductor device include a display device having a display element and a storage device having a storage element. , RFID, processors, etc., but are not limited to them.

[0817] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. It can be implemented in appropriate combination with at least a part of the above. [Explanation of symbols]

[0818] 10 Substrate 21 Conductive layer 22 Conductive layer 23 Conductive layer 30 insulating layer 31 Semiconductor layer 32 Semiconductor layer 41 Conductive layer 42 Conductive layer 43 Conductive layer 44 Conductive layer 45 Conductive layer 50 insulating layer 61 Conductive layer 62 Conductive layer 63 Conductive Layer 70 insulating layer 80 Functional Layers 90 Conductive Layer 100 boards 201 Conductive layer 202 Conductive layer 203 Conductive Layer 251 Conductive Layer 300 insulating layer 301 Semiconductor layer 302 Semiconductor layer 351 Semiconductor layer 401 Conductive layer 402 Conductive layer 402a Conductive layer 402b conductive layer 403 Conductive Layer 411 Conductive layer 451 Conductive Layer 452 Conductive layer 500 insulating layer 601 Conductive layer 602 Conductive layer 603 Conductive layer 604 Conductive layer 605 Conductive layer 611 Conductive layer 651 Conductive layer 700 insulating layer 800 Functional Layers 900 Conductive Layer L1 wiring L2 cabling L3 cabling L4 cabling L5 wiring S wiring V wiring Tr1 transistor Tr2 transistor Tr3 transistor Tr4 transistor Tr5 transistor R resistive element EL light-emitting element LC liquid crystal element

Claims

1. The semiconductor device includes first to sixth wirings, a first circuit, a second circuit, and a first conductive layer; the first circuit includes a first transistor and a second transistor; the second circuit includes a third transistor and a fourth transistor; one of the source and the drain of the first transistor is always electrically connected to the first wiring; the other of the source and the drain of the first transistor is always electrically connected to the gate of the second transistor; one of the source and the drain of the second transistor is always electrically connected to the third wiring; the gate of the first transistor is always electrically connected to the fourth wiring; when the first wiring is in a state of conduction with the gate of the second transistor and the third wiring via at least a channel formation region of the first transistor, a potential of the first wiring is applied to the gate of the second transistor and the third wiring; when the first transistor is in a non-conductive state and the second wiring is in a conductive state with the third wiring at least through a channel formation region of the second transistor, a potential of the second wiring is applied to the third wiring; one of the source and the drain of the third transistor is always electrically connected to the first wiring; the other of the source and the drain of the third transistor is always electrically connected to the gate of the fourth transistor; one of the source and the drain of the fourth transistor is always electrically connected to the fifth wiring; the gate of the third transistor is always electrically connected to the sixth wiring; when the first wiring is in a state of conduction with the gate of the fourth transistor and the fifth wiring via at least a channel formation region of the third transistor, a potential of the first wiring is applied to the gate of the fourth transistor and the fifth wiring; when the third transistor is in a non-conductive state and the second wiring is in a conductive state with the fifth wiring through at least a channel formation region of the fourth transistor, a potential of the second wiring is applied to the fifth wiring; the first conductive layer is always electrically connected to the second wiring and has a region disposed above the second wiring; the first conductive layer has a first hole; a second conductive layer having a function as a gate of the second transistor overlapping with the first hole; Semiconductor device.

2. The semiconductor device includes first to sixth wirings, a first circuit, a second circuit, and a first conductive layer; the first circuit includes a first transistor and a second transistor; the second circuit includes a third transistor and a fourth transistor; one of the source and the drain of the first transistor is always electrically connected to the first wiring; the other of the source and the drain of the first transistor is always electrically connected to the gate of the second transistor; one of the source and the drain of the second transistor is always electrically connected to the third wiring; the gate of the first transistor is always electrically connected to the fourth wiring; when the first wiring is in a state of conduction with the gate of the second transistor and the third wiring via at least a channel formation region of the first transistor, a potential of the first wiring is applied to the gate of the second transistor and the third wiring; when the first transistor is in a non-conductive state and the second wiring is in a conductive state with the third wiring at least through a channel formation region of the second transistor, a potential of the second wiring is applied to the third wiring; one of the source and the drain of the third transistor is always electrically connected to the first wiring; the other of the source and the drain of the third transistor is always electrically connected to the gate of the fourth transistor; one of the source and the drain of the fourth transistor is always electrically connected to the fifth wiring; the gate of the third transistor is always electrically connected to the sixth wiring; when the first wiring is in a state of conduction with the gate of the fourth transistor and the fifth wiring via at least a channel formation region of the third transistor, a potential of the first wiring is applied to the gate of the fourth transistor and the fifth wiring; when the third transistor is in a non-conductive state and the second wiring is in a conductive state with the fifth wiring through at least a channel formation region of the fourth transistor, a potential of the second wiring is applied to the fifth wiring; the first conductive layer is always electrically connected to the second wiring and has a region disposed above the second wiring; the first conductive layer has a first hole; a second conductive layer having a function as a gate of the second transistor overlapping with the first hole; the first conductive layer has a second hole; a third conductive layer having a function as a gate of the fourth transistor overlapping with the second hole; Semiconductor device.

3. In claim 1 or claim 2, the first conductive layer has a region that does not overlap with the first wiring; Semiconductor device.

4. In any one of claims 1 to 3, the first conductive layer has a region that does not overlap with the second wiring; Semiconductor device.

5. In any one of claims 1 to 4, the first conductive layer includes any one of gold, silver, copper, platinum, iron, aluminum, molybdenum, titanium, and tungsten; Semiconductor device.

6. In any one of claims 1 to 5, the first to fourth transistors have the same polarity; Semiconductor device.

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