Manufacturing apparatus for display device

Abstract

To provide a manufacturing apparatus for a display device, by which the process from the formation of a pixel circuit to the formation of a light-emitting element can be performed continuously.SOLUTION: A manufacturing apparatus for a light-emitting device that can continuously perform a film-formation step, a lithography step, an etching step, and a sealing step for forming an organic EL element, and a manufacturing apparatus for forming a pixel circuit that drives the organic EL element are provided. The formation from the pixel circuit to the organic EL element can be performed continuously, and a display device with high yield and high reliability can be formed.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to an apparatus and a method for manufacturing a display device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specific examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, memory devices, imaging devices, and operation methods thereof or manufacturing methods thereof. [Background technology]

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet devices, and notebook computers. Furthermore, with the rise in resolution, stationary display devices such as televisions and monitors also require higher definition. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of display devices that can be applied to display panels include liquid crystal display devices, light-emitting devices equipped with light-emitting elements such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs: Light Emitting Diodes), and electronic paper that displays using electrophoresis methods.

[0005] An organic EL element has a structure in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A display device using such an organic EL element does not require a backlight, which is necessary in liquid crystal display devices and the like, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-324673 Summary of the Invention [Problem to be solved by the invention]

[0007] Known organic EL display devices capable of full-color display include a configuration in which a white light-emitting element is combined with a color filter, and a configuration in which RGB light-emitting elements are formed on the same surface.

[0008] The latter configuration is ideal in terms of power consumption, and currently, in the manufacture of small and medium-sized panels, the luminescent materials are painted separately using metal masks, etc. However, because the process using metal masks has low alignment accuracy, the area occupied by the luminescent element within the pixel must be small, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks have problems in increasing pixel density or light emission intensity. To increase the aperture ratio, it is preferable to enlarge the area of ​​the light-emitting element using a lithography process or the like. However, the reliability of the materials that make up the light-emitting element deteriorates when impurities (water, oxygen, hydrogen, etc.) in the air invade, so multiple processes must be performed in an area with a controlled atmosphere.

[0010] Additionally, small, high-resolution displays are desired for AR and VR applications. Displays for AR and VR applications are preferably designed with narrow frames because they are installed in devices with small volumes, such as eyeglasses or goggles. Therefore, it is preferable to provide pixel circuit drivers and other components below the pixel circuits. Furthermore, when producing these small displays, there is a demand for manufacturing equipment that can perform continuous processing from the pixel circuit to the light-emitting element.

[0011] Therefore, an object of one embodiment of the present invention is to provide a manufacturing apparatus for a display device that can perform continuous processing from the formation of a pixel circuit to the formation of a light-emitting element without exposure to the atmosphere, or to provide a manufacturing apparatus for a display device that can form a light-emitting element without using a metal mask, or to provide a manufacturing method for a display device.

[0012] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0013] One aspect of the present invention relates to an apparatus for manufacturing a light-emitting device.

[0014] One aspect of the present invention is a display device manufacturing apparatus comprising a pixel circuit manufacturing apparatus and a light-emitting device manufacturing apparatus, the light-emitting device manufacturing apparatus comprising a first load lock chamber, a first cluster, and a second cluster, the first load lock chamber being connected to the first cluster via a first gate valve and the first load lock chamber being connected to the second cluster via a second gate valve, the first load lock chamber being controlled to a reduced pressure or an inert gas atmosphere, the first cluster being controlled to a reduced pressure and the second cluster being controlled to an inert gas atmosphere, the first cluster having a first transport device, a plurality of film formation devices, and an etching device, the second cluster having a second transport device and a plurality of devices for performing a lithography process, the pixel circuit manufacturing apparatus having a second load lock chamber, the first load lock chamber being connected to the second load lock chamber via a transfer chamber, and the display device manufacturing apparatus having a function of forming a light-emitting device having an island-shaped organic compound on a pixel electrode formed on a substrate by the pixel circuit manufacturing apparatus.

[0015] The film forming apparatus is preferably one or more selected from a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus, and the etching apparatus is preferably a dry etching apparatus.

[0016] The first cluster preferably includes a vacuum bake unit.

[0017] The multiple devices that perform the lithography process may include a coating device, an exposure device, a developing device, and a baking device, or may include a coating device and a nanoimprint device.

[0018] In the first cluster, the substrate can be loaded onto a substrate transport jig for processing. The substrate transport jig has a first jig and a second jig, and can sandwich the substrate between the first jig and the second jig.

[0019] Alternatively, the substrate transport jig may have a first jig and a plurality of second jigs, and a plurality of spaced-apart substrates may be placed on the first jig, with the substrates sandwiched between the first jig and the second jig.

[0020] The first cluster may include a substrate transport jig attachment / detachment device.

[0021] The first cluster may have a substrate inverting device to which a substrate transport jig is attached.

[0022] The pixel circuit manufacturing apparatus may have a third cluster and a fourth cluster, the second load lock chamber being connected to the third cluster via a third gate valve, the second load lock chamber being connected to the fourth cluster via a fourth gate valve, the second load lock chamber being controlled to reduced pressure or normal pressure, the third cluster being controlled to reduced pressure and the fourth cluster being controlled to normal pressure, the third cluster having a third transport device, multiple film formation devices, an etching device, and a plasma processing device, and the second cluster having a fourth transport device, multiple devices for performing lithography processes, and a polishing device.

[0023] Preferably, the film forming apparatus is one or more selected from a sputtering apparatus, a CVD apparatus, and an ALD apparatus, the etching apparatus is a dry etching apparatus, and the polishing apparatus is a CMP apparatus.

[0024] The apparatus for performing the lithography process may include a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus.

[0025] The first load lock chamber can be connected to the second load lock chamber via a fifth gate valve and a transfer chamber.

[0026] The substrate may be a silicon wafer, which may be provided with a driver circuit and have a pixel circuit electrically connected to the driver circuit. [Effects of the Invention]

[0027] By using one embodiment of the present invention, it is possible to provide a manufacturing apparatus for a display device that can perform steps from forming a pixel circuit to forming a light-emitting element continuously without exposure to the atmosphere, or a manufacturing apparatus for a display device that can form a light-emitting element without using a metal mask, or a manufacturing method for a display device.

[0028] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0029] [Figure 1] FIG. 1 is a diagram illustrating the manufacturing apparatus. [Figure 2] 2A and 2B are diagrams illustrating the substrate transport jig. [Figure 3] 3A to 3C are diagrams showing an example of the number of display devices that can be taken per substrate. [Figure 4] Fig. 4A is a diagram illustrating the size of the through-hole of the substrate transport jig and the hand part of the transport device, Fig. 4B and Fig. 4C are diagrams illustrating the substrate transport jig and the transport device. [Figure 5] Fig. 5A is a diagram illustrating a substrate inverting device, and Figs. 5B to 5D are diagrams illustrating the substrate inverting device and a substrate transport jig. [Figure 6] 6A to 6C are diagrams illustrating the substrate inversion operation. [Figure 7] 7A to 7C are diagrams illustrating the substrate inversion operation. [Figure 8] Fig. 8A is a diagram illustrating a vapor deposition apparatus, and Fig. 8B is a diagram illustrating a dry etching apparatus. [Figure 9] FIG. 9 is a diagram illustrating a manufacturing apparatus. [Figure 10]10A to 10D are diagrams illustrating a substrate placed on a substrate transport jig. [Figure 11] 11A to 11C are diagrams illustrating a method for placing a substrate on a substrate transport jig. [Figure 12] FIG. 12 is a diagram illustrating a display device. [Figure 13] 13A to 13C are diagrams illustrating a display device. [Figure 14] 14A to 14D are diagrams illustrating a method for manufacturing a display device. [Figure 15] 15A to 15D are diagrams illustrating a method for manufacturing a display device. [Figure 16] 16A to 16D are diagrams illustrating a method for manufacturing a display device. [Figure 17] FIG. 17 is a diagram illustrating a manufacturing apparatus. [Figure 18] FIG. 18 is a diagram illustrating a manufacturing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0030] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. In addition, hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0031] (Embodiment 1) In this embodiment, a manufacturing apparatus for a display device according to one embodiment of the present invention will be described with reference to drawings.

[0032] One aspect of the present invention is a manufacturing apparatus used to form a display device having light-emitting elements (also called light-emitting devices) such as organic EL elements. To miniaturize the organic EL elements or increase the area occupied by pixels, a lithography process is preferably used. However, since the intrusion of impurities such as water, oxygen, and hydrogen into the organic EL elements impairs their reliability, it is necessary to take measures such as controlling the atmosphere to have a low dew point from the manufacturing stage.

[0033] In the manufacturing apparatus according to one embodiment of the present invention, the film-forming process, lithography process, etching process, and sealing process for forming an organic EL element can be performed continuously without exposure to the atmosphere, thereby enabling the formation of a fine, high-brightness, and highly reliable organic EL element.

[0034] Furthermore, the manufacturing apparatus according to one embodiment of the present invention includes a manufacturing apparatus for forming a pixel circuit that drives an organic EL element, and therefore, the processes from the pixel circuit to the organic EL element can be continuously formed, and a display device with high yield and high reliability can be manufactured.

[0035] Furthermore, a silicon wafer can be used as a support substrate on which pixel circuits and organic EL elements are formed. By using a silicon wafer on which a driving circuit and the like have already been formed as a support substrate, pixel circuits can be formed on the driving circuit. This allows for the formation of a display device with a narrow frame suitable for AR or VR. The silicon wafer preferably has a diameter of 8 inches or more (e.g., 12 inches).

[0036] 1 is a diagram illustrating a manufacturing apparatus for a display device according to one embodiment of the present invention, which includes a manufacturing apparatus for a light-emitting device and a manufacturing apparatus for a pixel circuit.

[0037] <Light-emitting device manufacturing equipment> The light-emitting device manufacturing apparatus includes cluster 20E, cluster 30E, and load-lock chamber LL2. In this specification, a group of devices that share a transfer device and the like is called a cluster. Cluster 20E includes a group of devices for performing a vacuum process (reduced pressure process). Cluster 30E includes a group of devices for performing a process under atmospheric control.

[0038] <Cluster 20E> Cluster 20E has transfer chamber TF6 and vacuum process equipment EVC. While FIG. 1 shows an example in which there are six vacuum process equipment EVCs (vacuum process equipment EVC1 to EVC6), one or more may be used depending on the purpose. A vacuum pump VP is connected to each vacuum process equipment EVC, and a gate valve is provided between each vacuum process equipment EVC and transfer chamber TF6. Therefore, processes such as film formation or etching can be performed in parallel in each vacuum process equipment EVC.

[0039] The vacuum process refers to a process performed in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only a process performed under high vacuum, but also a process in which a process gas is introduced and pressure is controlled.

[0040] The transfer chamber TF6 is also provided with an independent vacuum pump VP to prevent cross-contamination during the processes performed in the vacuum process equipment EVC. Note that, as in the vacuum process equipment EVC6 shown in Figure 1, a configuration without a gate valve between the transfer chamber TF6 and the transfer chamber TF6 may be used.

[0041] The transfer chamber TF6 is connected to the load lock chamber LL2 via a gate valve. The transfer chamber TF6 is provided with transfer devices 70f1 and 70f2. The transfer device 70f1 can transfer a substrate placed in the load lock chamber LL2 to the vacuum process equipment EVC. The transfer device 70f2 can transfer the substrate using a substrate transfer jig, which will be described later. Note that the configuration may include only one of the transfer devices 70f1 and 70f2.

[0042] The vacuum process equipment EVC can be a deposition equipment such as an evaporation equipment, a sputtering equipment, a CVD (Chemical Vapor Deposition) equipment, or an ALD (Atomic Layer Deposition) equipment. The CVD equipment can be a thermal CVD equipment using heat, or a PECVD (Plasma Enhanced CVD) equipment using plasma. The ALD equipment can be a thermal ALD equipment using heat, or a PEALD (Plasma Enhanced ALD) equipment using plasma-excited reactants. The etching equipment can be a dry etching equipment. Auxiliary mechanisms such as a substrate transfer jig attachment / detachment device and a substrate inversion device can also be used as the vacuum process equipment EVC. These auxiliary mechanisms can be used in a vacuum process equipment EVC6 that does not have a gate valve between it and the transfer chamber TF6.

[0043] <Cluster 30E> Cluster 30E includes transfer chamber TF5 and atmospheric-pressure process equipment EAC, which mainly performs processes under atmospheric pressure. While FIG. 1 shows an example in which there are six atmospheric-pressure process equipment EAC (atmospheric-pressure process equipment EAC1 to EAC6), one or more units may be used depending on the purpose. The atmospheric-pressure process equipment EAC is not limited to processes under atmospheric pressure, and may be controlled to a pressure slightly lower than atmospheric pressure (negative or positive). Furthermore, when multiple atmospheric-pressure process equipment EACs are provided, the atmospheric pressures may be different for each unit.

[0044] The transfer chamber TF5 and the atmospheric pressure process unit EAC are connected to valves for introducing inert gas (IG), allowing for controlled inert gas atmosphere. The inert gas can be nitrogen or a noble gas such as argon or helium. It is also preferable for the inert gas to have a low dew point (for example, below -50°C). Performing the process in an inert gas atmosphere with a low dew point prevents the incorporation of impurities, enabling the formation of highly reliable organic EL elements.

[0045] 1 shows an example in which each of the atmospheric pressure process equipment EAC1 to EAC5 is connected to the transfer chamber TF5 via a gate valve. By providing a gate valve, it is possible to control the air pressure, control the inert gas species, and prevent cross-contamination. However, if strict control of these factors is not required, the atmospheric pressure process equipment EAC6 may be connected to the transfer chamber TF5 without a gate valve.

[0046] The transfer chamber TF5 is connected to the load lock chamber LL2 via a gate valve. A transfer device 70e is provided in the transfer chamber TF5, and can transfer a substrate placed in the load lock chamber LL2 to the atmospheric pressure process device EAC.

[0047] The atmospheric pressure process equipment EAC can be an equipment for performing a lithography process. For example, when performing a photolithography process, a resin (photoresist) coating equipment, an exposure equipment, a developing equipment, a baking equipment, etc. can be used. When performing a lithography process using nanoimprinting, a resin (UV curable resin, etc.) coating equipment, a nanoimprinting equipment, etc. can be used. In addition, depending on the application, a cleaning equipment, a wet etching equipment, a coating equipment, a resist stripping equipment, an opposing substrate bonding equipment, etc. can also be used as the atmospheric pressure process equipment EAC.

[0048] The load lock chamber LL2 is equipped with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load lock chamber LL2 can be controlled to have a reduced pressure or an inert gas atmosphere. For example, when transferring a substrate from cluster 20E to cluster 30E, the load lock chamber LL2 can be depressurized, the substrate can be transferred from cluster 20E, and the load lock chamber LL2 can be set to an inert gas atmosphere before the substrate is transferred to cluster 30E.

[0049] The load lock chamber LL2 is also provided with a substrate rotation mechanism 45 that rotates the transferred substrate around the Z axis (an axis perpendicular to the center of the substrate's upper surface). When a silicon wafer is used as the substrate, the substrate rotation mechanism 45 allows the orientation of the notch or orientation flat to be aligned when the substrate is transferred in or out.

[0050] <Pixel circuit manufacturing equipment> The pixel circuit manufacturing apparatus has a load / unload unit 10, cluster 20, cluster 30, and load lock chamber LL1. Cluster 20 has a group of devices for performing a vacuum process (reduced pressure process). Cluster 30 has a group of devices for performing a process under normal pressure. Note that in the description of cluster 20, explanation of parts common to cluster 20E will be omitted. Also, in the description of cluster 30, explanation of parts common to cluster 30E will be omitted.

[0051] <Load / unload section> The load / unload section 10 has load / unload chambers LU (load / unload chambers LU1, LU2, LU3) and transfer chamber TF1. Transfer chamber TF1 is connected to load / unload chamber LU. Transfer chamber TF1 is also connected to load lock chamber LL1 via a gate valve. A transfer device 70a is provided in transfer chamber TF1, which can transfer a substrate placed in load / unload chamber LU to load lock chamber LL1.

[0052] A gate valve may be provided between the load / unload chamber LU and the transfer chamber TF1. Although the load / unload chamber LU is shown in Fig. 1, a load chamber and an unload chamber may be provided separately.

[0053] <Cluster 20> The cluster 20 has a transfer chamber TF2 and a vacuum process unit VC. Although Fig. 1 shows an example in which there are six vacuum process units VC (vacuum process units VC1 to VC6), one or more units may be used depending on the purpose.

[0054] The transfer chamber TF2 is connected to the load lock chamber LL1 via a gate valve. A transfer device 70b is provided in the transfer chamber TF2. The transfer device 70b can transfer a substrate placed in the load lock chamber LL1 to the vacuum process device VC.

[0055] The vacuum process equipment VC may be a film forming equipment such as a sputtering equipment, a CVD equipment, an ALD equipment, or a plasma processing equipment, etc. The etching equipment may be a dry etching equipment, etc.

[0056] The plasma processing apparatus may be, for example, a microwave-excited plasma processing apparatus capable of generating high-density plasma, and may be used for, for example, a process of supplementing oxygen to components of a transistor when a transistor using an oxide semiconductor is formed in a pixel circuit.

[0057] <Cluster 30> Cluster 30 has a transfer chamber TF3 and atmospheric pressure process equipment AC that mainly performs processes under atmospheric pressure. While Fig. 1 shows an example in which there are six atmospheric pressure process equipment AC (atmospheric pressure process equipment AC1 to AC6), one or more units may be used depending on the purpose. Although not shown, a valve for introducing an inert gas (IG) may be provided, similar to cluster 30E, to control the inert gas atmosphere.

[0058] The transfer chamber TF3 is connected to the load lock chamber LL1 via a gate valve. A transfer device 70c is provided in the transfer chamber TF3, and can transfer a substrate placed in the load lock chamber LL1 to the atmospheric pressure process device AC.

[0059] The atmospheric pressure process equipment AC can be an equipment for performing a lithography process. For example, when performing a photolithography process, a resin (photoresist) coating equipment, an exposure equipment, a developing equipment, a resist stripping equipment, a baking equipment, etc. can be used. A polishing equipment can also be provided.

[0060] It is preferable to use a CMP (Chemical Mechanical Polishing) device as the polishing device. Applications include planarizing the formation surface of transistors and other elements of pixel circuits, forming buried plugs, and forming buried wiring. In addition, cleaning devices, wet etching devices, etc. may be applied to the atmospheric pressure process device AC depending on the application.

[0061] Load lock chamber LL1 is connected to load lock chamber LL2 via a gate valve, transfer chamber TF4, and another gate valve. Transfer chamber TF4 can also be connected to load chamber LD and unload chamber ULD. Load lock chamber LL1 is also provided with a substrate rotation mechanism 47 similar to substrate rotation mechanism 45.

[0062] By providing the unload chamber ULD in the transfer chamber TF4, for example, a substrate on which a light-emitting device formation process has been completed can be removed without returning it to the load / unload unit 10, thereby preventing contamination caused by the light-emitting device material. Furthermore, by providing a load chamber, for example, when only a light-emitting device formation process is to be performed, the substrate can be loaded without going through the load / unload unit 10. Note that the load / unload unit 10 can also remove a substrate on which only a pixel circuit formation process has been performed.

[0063] Transfer chamber TF4 is provided with a transfer device 70d, which can transfer substrates placed in load lock chamber LL1 to load lock chamber LL2. It can also carry substrates in from load chamber LD and out to unload chamber ULD. Transfer device 70d is self-propelled and can move along rails 75. Note that, depending on the specifications of transfer chamber TF4 and transfer device 70d, a self-propelled configuration may not be necessary.

[0064] Gate valves may be provided between the transfer chamber TF4 and each of the load chamber LD and unload chamber ULD. Valves for introducing inert gas (IG) may be provided to the load lock chamber LL1 and transfer chamber TF4 to control the inert gas atmosphere. A vacuum pump VP may also be provided in the transfer chamber TF4.

[0065] The manufacturing apparatus configured as described above can be used to perform the following processes. First, a substrate is carried from the load / unload chamber LU to cluster 20, where a film formation process is performed. Note that the silicon wafer substrate is provided with pixel drive circuits and the like as needed. Next, the substrate is carried from cluster 20 to cluster 30, where a lithography process is performed. Next, the substrate is carried from cluster 30 to cluster 20, where an etching process is performed. These processes are repeated several times as needed to form a structure (a pixel circuit having transistors using oxide semiconductors and the like). Next, a film formation process is performed in cluster 20, where a protective film is formed to cover the structure. Then, the substrate is carried out from cluster 20E to load lock chamber LL1.

[0066] Next, the substrate is carried into cluster 20E from load lock chamber LL1 via load lock chamber LL2, where a film formation process is performed. Next, the substrate is carried from cluster 20E to cluster 30E, where a lithography process is performed. Next, the substrate is carried from cluster 30E to cluster 20E, where an etching process is performed. These processes are repeated several times as necessary to form a structure (a light-emitting element such as an organic EL element) on the pixel circuit. Next, a film formation process is performed in cluster 20E, where a protective film is formed to cover the structure. Then, the substrate is carried out from cluster 20E to unload chamber ULD or load / unload chamber LU.

[0067] As a result, light-emitting elements such as organic EL elements can be transported into the atmosphere while sealed with a protective film, without being exposed to the atmosphere. In other words, when organic EL elements are formed as a structure, the intrusion of impurities contained in the atmosphere can be suppressed, thereby improving reliability. Furthermore, since the light-emitting device formation process is performed consecutively from the pixel circuit formation process, a display device with high yield and high reliability can be formed.

[0068] <Substrate transport jig> In vacuum process equipment, the orientation of the substrate (face-up or face-down) may differ depending on the equipment. For example, sputtering equipment, CVD equipment, etching equipment, etc., place the substrate on one of the opposing electrodes, so they can be used in either the face-up or face-down orientation.

[0069] Therefore, the substrate can be configured to be placed face-up in all vacuum process equipment VC in cluster 20. In the face-up method, the substrate can be placed on the hand part of the transfer device and transferred with the substrate surface on which the structure is to be formed facing up, and it is also easy to place the substrate on a stage (electrode, etc.) in the vacuum process equipment VC.

[0070] On the other hand, the evaporation device, which is one of the vacuum process devices EVC in cluster 20E, requires an evaporation source such as a crucible because the evaporation material is often powder. Therefore, it is preferable to install the evaporation source below and the substrate above in a face-down position. Therefore, it may be necessary to flip the substrate between processes.

[0071] In the face-down method, it is necessary to transport the substrate without touching the substrate surface with the hand of the transport device. Therefore, it is preferable to use a substrate transport jig as shown in Figures 2A and 2B. The substrate transport jig has jig 51 and jig 54. Figure 2A shows a substrate 60 sandwiched between jig 51 and jig 54, and this configuration is referred to as work substrate 50 in this specification. By sandwiching substrate 60 between jig 51 and jig 54, it is possible to reduce the bending of the substrate, which is particularly effective when installing the substrate using the face-down method.

[0072] The jig 54 has an opening, and the other parts of the jig hold the substrate 60. Since structures such as light-emitting elements are formed in the opening, the size and shape of the opening can be adjusted depending on the purpose. For example, the size of the opening can be determined depending on the size of the exposure area, which will be described below.

[0073] 3A to 3C show an example of the number of display devices that can be produced per substrate (e.g., a silicon wafer) with a diameter Φ of 12 inches. In FIGS. 3A to 3C, estimates are made assuming that external connection terminals are taken out from the backside using through-electrodes. This allows the display area to be widened. Pads may also be provided within the exposure area. In this case, the display area becomes smaller, but there is an effect of reducing the manufacturing cost related to the configuration for taking out the external connection terminals.

[0074] 3A to 3C each show an example in which the aspect ratio of the display area is 4:3.

[0075] FIG. 3A shows an example in which a sealing region is provided inside the exposure region (32 mm × 24 mm) of an exposure device. In the example of FIG. 3A, the width of the sealing region is 1.5 mm in the vertical direction and 2.0 mm in the horizontal direction. In this case, the size of the display region is 28 mm × 21 mm (aspect ratio 4:3), with a diagonal size of approximately 1.38 inches. The number of display devices per substrate is 72. If the width of the sealing region is 2.0 mm in the vertical direction and 2.65 mm in the horizontal direction, the size of the display region is 26.7 mm × 20 mm (aspect ratio 4:3), with a diagonal size of approximately 1.32 inches. If the width of the sealing region is 3.0 mm in the vertical direction and 4.0 mm in the horizontal direction, the size of the display region is 24 mm × 18 mm (aspect ratio 4:3), with a diagonal size of approximately 1.18 inches. In both cases, the number of display devices that can be mounted on one substrate is 72.

[0076] Figures 3B and 3C show examples in which a sealing region is provided outside the exposure region (32 mm x 24 mm) of the exposure device. In this case, a gap is left for the sealing region during exposure. A marker region is provided inside the exposure region. Figure 3B shows an example in which the width of the marker region is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing region is 2.0 mm. In this case, the size of the display region of the display device is approximately 1.51 inches diagonally. The number of display devices per substrate is 56. Note that if the width of the marker region is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, the size of the display region is approximately 1.45 inches diagonally. Figure 3C shows an example in which the width of the marker region is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing region is 3.0 mm. In this case, the size of the display region of the display device is approximately 1.51 inches diagonally, the same as the configuration in Figure 3B. The number of display devices that can be obtained from one substrate is 49, which is approximately 13% less than the configuration in FIG. 3B.

[0077] 2B is a diagram showing the jig 51, the substrate 60, and the jig 54 separated into upper and lower halves. The jig 51 and the jig 54 are preferably formed from a hard material such as metal, ceramics, or cermet. Alternatively, they may be formed from a combination of these. FIG. 2B shows an example in which a magnet is provided in the jig 51, and the substrate 60 is sandwiched between the jig 54 made of a magnetic metal.

[0078] Alternatively, magnetic metal may be provided only on the portion of jig 54 facing magnet 55, with the other portions being made of ceramics or the like. Magnet 55 may also be provided on the jig 51 side. Alternatively, magnet 55 may be provided on both jig 51 and jig 54. Note that substrate 60 may be sandwiched between jig 51 and jig 54 using a spring or other structure.

[0079] Furthermore, the jig 51 can be provided with through holes 58 for pusher pins and pins 62 for alignment. By passing a pusher pin through the through holes 58, the substrate 60 can be lifted, making it easy to install the substrate 60 in the jig 51 or remove it from the jig 51. Furthermore, a notch portion of the substrate 60 can be fitted to the pins 62, and rough alignment can be achieved by aligning the substrate 60 with the countersunk portion 59. Details of installing the substrate 60 in the jig 51 will be described later.

[0080] 2B, jig 51 has a rectangular top surface and a flat plate portion, which is preferably equal to or larger than the diameter of substrate 60. A first end perpendicular to the top surface of the flat plate portion and a second end opposite the first end are provided with protrusions 56. Protrusions 56 can be used when installing in a face-down position, as described below.

[0081] Furthermore, through holes 52 and 53 are provided between a third end perpendicular to the first end and a fourth end opposite to the third end.

[0082] Here, a comparison of the sizes of the through hole 52 and the hand unit 71 of the transport device 70 is shown in Figure 4B. If the inner dimensions of the cross section perpendicular to the long axis of the through hole 52 are X1 x Y1 and the outer dimensions of the cross section perpendicular to the long axis of the hand unit 71 are X2 x Y2, then X1 > X2 and Y1 > Y2. Therefore, the hand unit 71 of the transport device 70 can be inserted into the through hole 52 as shown in Figure 4A.

[0083] 4C, even if the work substrate 50 is inverted, it can be transported by inserting the hand unit 71 of the transport device 70 into the through-hole 52. Therefore, the hand unit 71 does not come into contact with the surface of the substrate 60 or the jig 54, which prevents scratches and contamination on the surface of the substrate 60 and prevents peeling of the film adhering to the jig 54.

[0084] Furthermore, since the inner height (Y1) of the through-hole 52 is greater than the thickness (Y2) of the hand portion 71, the hand portion 71 of the transport device 70 can be inserted into and removed from the through-hole 52 of the fixed work substrate 50 simply by operating the transport device 70. Note that although the number of through-holes 52 is three in Figures 4B and 4C, it may be two or four or more. Note that the substrate transport jig described in this embodiment is an example, and substrate transport jigs with other configurations may also be used.

[0085] <Substrate inversion device> 5A, the through-holes 53 are for inserting hand units 85a and 85b of the substrate inverting device 80. The substrate inverting device 80 has a pillar 82 fixed to a base 81, a rotation mechanism 83 fixed to the pillar 82, and a rotation unit 84 fixed to the rotation shaft of the rotation mechanism 83. The rotation unit 84 also has horizontal movement mechanisms 86a and 86b, with the hand unit 85a connected to the horizontal movement mechanism 86a and the hand unit 85b connected to the horizontal movement mechanism 86b.

[0086] 5B shows a cross section perpendicular to the long axis of hand unit 85b of substrate inverting device 80 and a cross section perpendicular to the long axis of through hole 53. The cross section perpendicular to the long axis of hand unit 85b has a convex shaped portion 87 in part. Furthermore, the cross section perpendicular to the long axis of through hole 53 has a concave shaped portion 57 in part.

[0087] As shown in Fig. 5C, the convex shape portion 87 and the concave shape portion 57 are brought into close contact with each other by moving the horizontal movement mechanism 86b with the horizontal movement mechanism. As shown in Fig. 5D, the hand unit 85a, which has an axisymmetric configuration, is also moved in the same way, thereby fixing the hand units 85a and 85b to the work substrate 50. Note that the convex shape portion 87 and the concave shape portion 57 may have any shape that allows them to come into close contact with each other, and may have a curvature.

[0088] In FIG. 5D, the convex shaped portion 87 and the concave shaped portion 57 come into contact when the hand portions 85a and 85b move away from each other, but the convex shaped portion 87 and the concave shaped portion 57 may come into contact when the hand portions 85a and 85b move toward each other.

[0089] Next, we will explain the inversion operation of the work substrate 50. It is assumed that the work substrate 50 is in a standby state with the hand portion 71 of the transport device 70 inserted into the through-hole 52 in advance. Also, it is assumed that the surface of the substrate 60 is facing up.

[0090] First, hand parts 85a and 85b of substrate inverting device 80 are moved in directions approaching each other, and transport device 70 is operated so that hand parts 85a and 85b are inserted into through-holes 53 (see FIG. 6A).

[0091] Next, the hand units 85a and 85b are moved away from each other, and the work substrate 50 is fixed to the hand units 85a and 85b. Then, the hand unit 71 of the transport device 70 is slightly lowered to a height where it does not come into contact with the inner wall of the through hole 52 (see FIG. 6B). Then, the hand unit 71 is removed from the through hole 52 (see FIG. 6C).

[0092] Next, the rotation mechanism 83 rotates the rotation unit 84 (see FIG. 7A), and after inversion, the hand unit 71 of the transport device is inserted into the through hole 53. Next, the hand units 85a and 85b of the substrate inversion device 80 are moved in directions approaching each other, and the fixation of the hand units 85a and 85b to the work substrate 50 is released. Then, the hand unit 71 of the transport device 70 is slightly raised to a height where it contacts the inner wall of the through hole 52 (see FIG. 7B).

[0093] Then, the hand portion 71 is retracted, and the work substrate 50 is removed from the hand portions 85a and 85b of the substrate inverting device 80. This completes the inverting operation of the work substrate 50. Note that the same operation can be performed when returning from the state of FIG. 7C to the state of FIG. 6A.

[0094] <Vacuum process equipment EVC> Next, the installation of the work substrate 50 in the vacuum process equipment EVC will be described. Fig. 8A is a diagram illustrating the vacuum process equipment EVC in which the work substrate 50 is installed face-down, and shows a deposition equipment 90a as an example. Note that the gate valve is omitted for clarity of illustration.

[0095] The vapor deposition device 90a has a pair of rails 91 fixed to the chamber at a position higher than the vapor deposition source 92 (crucible). By placing the work substrate 50 so that the side surfaces of the convex portions 56 of the work substrate 50 rest on the rails 91, the work substrate 50 can be placed face-down in the chamber of the vapor deposition device 90a.

[0096] The sputtering apparatus may also be configured to place the work substrate 50 on rails 91 in the same manner as the deposition apparatus 90a shown in FIG. 8A, and the substrate may be placed face-down.

[0097] 8B is a diagram illustrating a vacuum process equipment EVC in which the work substrate 50 is placed face-up, and shows a dry etching equipment 90b as an example. Note that for clarity of the drawing, the gate valve is omitted.

[0098] The dry etching apparatus 90b is a parallel plate type and has a cathode 95 (stage) and an anode 96. By placing the work substrate 50 so that the jig 51 side of the work substrate 50 is in contact with the stage, the work substrate 50 can be placed in the chamber of the dry etching apparatus 90b in a face-up manner. Note that because the work substrate 50 can be loaded and unloaded simply by operating the transport device 70, there is no need for pusher pins or the like to lift the substrate.

[0099] A CVD apparatus, ALD apparatus, or the like in which the work substrate 50 is placed in a face-up manner can also be configured to place the work substrate 50 on a stage in the same manner as the dry etching apparatus 90b shown in FIG. 8B.

[0100] By using the manufacturing apparatus according to one embodiment of the present invention described above, the film formation process, lithography process, etching process, and sealing process can be performed continuously, thereby enabling the formation of a fine, high-brightness, and highly reliable organic EL element.

[0101] <Large format compatible> As shown in Figure 9, cluster 20E may be configured to accommodate large substrates, allowing batch processing of multiple substrates. By configuring cluster 20E to accommodate large substrates, throughput can be increased. Alternatively, it can be effectively utilized when large-format equipment is already available. The configuration shown in Figure 9 can be the same as that shown in Figure 1, except for cluster 20E.

[0102] In this configuration, the transport jig accommodates multiple substrates 60. FIG. 10A shows an example in which four substrates 60 are aligned and arranged on the jig 51. However, as shown in FIG. 10B, a configuration close to a staggered arrangement may also be used. FIG. 10B shows a configuration in which six substrates 60 are staggered, and FIG. 10C shows a configuration in which nine substrates 60 are staggered. By staggering the substrates 60, the size of the jig 51 can be reduced. Alternatively, more substrates 60 can be arranged on the jig 51.

[0103] 11A is a diagram illustrating the placement of substrate 60 on jig 51. Jig 51 is placed on stage 46. Stage 46 can move horizontally along rails 76, and can be moved according to the movable range of transport device 70.

[0104] First, the substrate 60 is placed on the hand of the transfer device 70 so that the notch is positioned at the front. The position of the notch can be adjusted by the rotational operation of the substrate rotation mechanism 45 in the load lock chamber LL2.

[0105] Next, the substrate 60 is transported to the placement position of the jig 51, the pusher pin 69 is raised to lift the substrate 60, and the hand of the transport device 70 is withdrawn. Then, the pusher pin 69 is lowered and placed in the countersunk portion 59. During these operations, as shown in the top view of FIG. 11B, it is preferable to provide a distance between the pin 62 and the notch 61 of the substrate 60 so that they do not come into contact with each other. By doing so, even if the substrate 60 moves within the play range of the countersunk portion 59, the notch 61 and the pin 62 come into contact and stop, so the substrate 60 does not move significantly. In other words, rough alignment is achieved between the countersunk portion and the pin 62.

[0106] 11C, the jig 54 is held by a transfer device 66 and transferred onto the substrate 60. Here, precise alignment is performed by observing the markers on the substrate 60 and the markers on the jig 54 with a camera 65. The jig 54 is then lowered and brought into close contact with the substrate 60, and the jig 54 is removed from the transfer device 66. The jig 54 can be held in the transfer device 66 using, for example, an electrostatic chuck or an electromagnet.

[0107] By the above operations, it is possible to place multiple substrates 60 on the jig 51 and align and place the jig 54 on the substrates 60. Note that the same operations can be performed when using the transport jig shown in Figure 2.

[0108] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0109] (Embodiment 2) In this embodiment, a specific example of a transistor and a light-emitting element (organic EL element) manufactured using an apparatus for manufacturing a display device according to one embodiment of the present invention will be described.

[0110] In this specification, etc., a device that uses a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as an MM (metal mask) structure. In addition, in this specification, etc., a device that does not use a metal mask or an FMM may be referred to as an MML (metal maskless) structure.

[0111] In this specification, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be made into a light-emitting device that displays full color by combining it with a colored layer (for example, a color filter).

[0112] Light-emitting devices can be broadly divided into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the emission colors of the respective light-emitting layers are complementary to each other. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0113] A tandem-structured device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light, light from the light-emitting layers of the multiple light-emitting units may be combined to obtain white light. The configuration for obtaining white light is the same as that of the single-structured device. In a tandem-structured device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0114] Furthermore, when comparing the above-mentioned white light-emitting device (single structure or tandem structure) with a light-emitting device with an SBS structure, the light-emitting device with an SBS structure can consume less power than the white light-emitting device. If you want to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device with an SBS structure, so it is preferable because it can reduce manufacturing costs or increase manufacturing yields.

[0115] Tandem-structure devices may also have a configuration (BB, GG, RR, etc.) in which light is emitted from multiple layers. A tandem structure, which allows light emission from multiple layers, requires a high voltage to emit light, but the current required to achieve the same emission intensity as a single structure is smaller. Therefore, a tandem structure can reduce the current stress per light-emitting unit and extend the device life.

[0116] <Configuration example> 12 is a schematic top view of a display device 100 according to one embodiment of the present invention. The display device 100 includes a plurality of red light-emitting elements 110R, a plurality of green light-emitting elements 110G, and a plurality of blue light-emitting elements 110B. In FIG. 12, the light-emitting regions of the light-emitting elements are labeled with R, G, and B to easily distinguish the light-emitting elements from one another.

[0117] The light emitting elements 110R, 110G, and 110B are arranged in a matrix. Fig. 12 shows a so-called stripe arrangement in which light emitting elements of the same color are arranged in one direction. Note that the arrangement of the light emitting elements is not limited to this, and arrangements such as a delta arrangement or a zigzag arrangement may also be used, or a pentile arrangement may also be used.

[0118] It is preferable to use EL elements such as OLEDs (organic light emitting diodes) or QLEDs (quantum-dot light emitting diodes) as the light emitting elements 110R, 110G, and 110B. Examples of light emitting materials that the EL elements have include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF materials).

[0119] FIG. 13A is a schematic cross-sectional view corresponding to the dashed dotted line A1-A2 in FIG.

[0120] 12 shows cross sections of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B. The light emitting element 110R, the light emitting element 110G, and the light emitting element 110B are each provided on a pixel circuit, and have a pixel electrode 111 and a common electrode 113.

[0121] The light-emitting element 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains a light-emitting organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting element 110B contains a light-emitting organic compound that emits light having a peak in at least the blue wavelength range. Note that a structure in which the EL layer 112R, EL layer 112G, and EL layer 112B each emit light of a different color may be referred to as an SBS (Side By Side) structure.

[0122] EL layer 112R, EL layer 112G, and EL layer 112B may each have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer).

[0123] The pixel electrode 111 is provided for each light-emitting element. The common electrode 113 is provided as a continuous layer common to each light-emitting element. A conductive film that is transparent to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective to visible light is used for the other. By making the pixel electrode 111 transparent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making the pixel electrode 111 reflective and the common electrode 113 transparent, a top-emission display device can be obtained. Note that by making both the pixel electrode 111 and the common electrode 113 transparent, a dual-emission display device can also be obtained. In this embodiment, an example of manufacturing a top-emission display device will be described.

[0124] An insulating layer 131 is provided to cover the edge of the pixel electrode 111. The edge of the insulating layer 131 is preferably tapered.

[0125] The EL layer 112R, the EL layer 112G, and the EL layer 112B each have a region in contact with the upper surface of the pixel electrode 111 and a region in contact with the surface of the insulating layer 131. In addition, the ends of the EL layer 112R, the EL layer 112G, and the EL layer 112B are located on the insulating layer 131.

[0126] As shown in Figure 13A, a gap is provided between two EL layers between light-emitting elements of different colors. In this way, it is preferable that EL layer 112R, EL layer 112G, and EL layer 112B are arranged so that they do not contact each other. This effectively prevents current from flowing through two adjacent EL layers, which would otherwise cause unintended light emission. This allows for increased contrast and a display device with high display quality.

[0127] Furthermore, a protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities from diffusing from above into each light emitting element. Alternatively, the protective layer 121 has a function of capturing (also called gettering) impurities (typically impurities such as water and hydrogen) that may enter each light emitting element.

[0128] The protective layer 121 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0129] The pixel electrode 111 is electrically connected to one of the source and drain of the transistor 116. The transistor 116 can be, for example, a transistor having a metal oxide in a channel formation region (hereinafter referred to as an OS transistor). The OS transistor has higher mobility and superior electrical characteristics than amorphous silicon transistors. Furthermore, the OS transistor does not require the crystallization process that is required in the manufacturing process of polycrystalline silicon, and can be formed through a wiring process or the like. Therefore, the OS transistor can be formed on the transistor 115 having silicon in a channel formation region (hereinafter referred to as a Si transistor) formed on the substrate 60 without using a bonding process or the like.

[0130] Here, the transistor 116 is a transistor included in a pixel circuit and can be formed using a manufacturing apparatus of one embodiment of the present invention. The transistor 115 is a transistor included in a driver circuit of the pixel circuit. That is, since the pixel circuit can be formed over the driver circuit, a display device with a narrow frame can be formed.

[0131] As a semiconductor material for an OS transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used.

[0132] Because of the large energy gap of the semiconductor layer, OS transistors exhibit extremely low off-state currents of a few yA / μm (current value per 1 μm of channel width). Furthermore, unlike Si transistors, OS transistors have characteristics such as the absence of impact ionization, avalanche breakdown, and short-channel effects, making them suitable for the formation of high-voltage, highly reliable circuits. Furthermore, OS transistors are less susceptible to variations in electrical characteristics due to non-uniformity in crystallinity, which is a problem with Si transistors.

[0133] A semiconductor layer included in an OS transistor can be, for example, a film represented by an In-M-Zn-based oxide containing indium, zinc, and M (M is one or more metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can be typically formed by a sputtering method. Alternatively, it may be formed by an atomic layer deposition (ALD) method.

[0134] The atomic ratio of the metal elements in a sputtering target used to form an In-M-Zn-based oxide by sputtering preferably satisfies In≧M and Zn≧M. Preferred atomic ratios of the metal elements in such sputtering targets are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, etc. The atomic ratios of the semiconductor layer to be formed each have a variation of ±40% of the atomic ratio of the metal elements contained in the sputtering target.

[0135] The semiconductor layer is made of an oxide semiconductor with a low carrier density. For example, the semiconductor layer is made of an oxide semiconductor with a carrier density of 1×10 17 / cm 3 Less than 1 × 10 15 / cm 3 or less, more preferably 1 × 10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 or less, more preferably 1 × 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 An oxide semiconductor having a carrier density above or equal to this can be used. Such an oxide semiconductor is called a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. The oxide semiconductor has a low density of defect states and stable characteristics.

[0136] Note that the present invention is not limited to these, and an oxide semiconductor having an appropriate composition may be used depending on the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. In order to obtain the semiconductor characteristics of the transistor, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like of the semiconductor layer.

[0137] When silicon or carbon, which is one of the group 14 elements, is contained in the oxide semiconductor constituting the semiconductor layer, oxygen vacancies increase, resulting in n-type conductivity. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is set to 2×10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following applies.

[0138] In addition, when an alkali metal or alkaline earth metal is bonded to an oxide semiconductor, it may generate carriers, which may increase the off-state current of a transistor. Therefore, the concentration of the alkali metal or alkaline earth metal in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is set to 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0139] Furthermore, if nitrogen is contained in the oxide semiconductor that constitutes the semiconductor layer, electrons acting as carriers are generated, increasing the carrier density and making the semiconductor layer more likely to be n-type. As a result, transistors using oxide semiconductors that contain nitrogen tend to have normally-on characteristics. Therefore, the nitrogen concentration in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 5×10 18 atoms / cm 3 It is preferable to do the following:

[0140] Furthermore, if hydrogen is contained in an oxide semiconductor constituting a semiconductor layer, it may react with oxygen bonded to metal atoms to form water, which may form oxygen vacancies in the oxide semiconductor. If oxygen vacancies are present in the channel formation region of an oxide semiconductor, the transistor may exhibit normally-on characteristics. Furthermore, defects in which hydrogen enters the oxygen vacancies may function as donors and generate electrons that serve as carriers. Furthermore, some of the hydrogen may bond with oxygen that is bonded to metal atoms to generate electrons that serve as carriers. Therefore, a transistor using an oxide semiconductor containing a large amount of hydrogen is likely to exhibit normally-on characteristics.

[0141] A defect in which hydrogen is introduced into an oxygen vacancy can function as a donor in an oxide semiconductor. However, it is difficult to quantitatively evaluate such defects. Therefore, oxide semiconductors are sometimes evaluated using carrier concentration instead of donor concentration. Therefore, in this specification and the like, a carrier concentration assuming a state in which no electric field is applied may be used as a parameter of an oxide semiconductor instead of donor concentration. In other words, the "carrier concentration" described in this specification and the like may be rephrased as "donor concentration."

[0142] Therefore, it is preferable that the hydrogen concentration in the oxide semiconductor be reduced as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor measured by secondary ion mass spectrometry (SIMS) is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 When an oxide semiconductor in which impurities such as hydrogen are sufficiently reduced is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0143] A manufacturing apparatus for a display device according to one embodiment of the present invention includes a sputtering apparatus or an ALD apparatus and can form a high-quality oxide semiconductor.

[0144] 13A illustrates a configuration in which the light-emitting layers of the R, G, and B light-emitting elements are different from one another, but the present invention is not limited to this. For example, as shown in FIG. 13B, a color system may be used in which an EL layer 112W that emits white light is provided, and colored layers 114R (red), 114G (green), and 114B (blue) are provided so as to overlap the EL layer 112W to form light-emitting elements 110R, 110G, and 110B.

[0145] The EL layer 112W may have a tandem structure in which EL layers that emit R, G, and B light are connected in series. Alternatively, a structure in which light-emitting layers that emit R, G, and B light may be connected in series may be used. The colored layers 114R, 114G, and 114B may be, for example, red, green, and blue color filters.

[0146] Alternatively, as shown in FIG. 13C, a pixel circuit may be formed by a transistor 117 included in the substrate 60, and one of the source or drain of the transistor 117 and the pixel electrode 111 may be electrically connected.

[0147] Here, transistor 117 is a Si transistor formed on substrate 60. In the manufacturing apparatus of one embodiment of the present invention, substrate 60 on which transistor 117 is formed is loaded from a load chamber provided in transfer chamber TF4, and each light-emitting element is formed in cluster 20E and cluster 30E, and then the substrate is unloaded from an unload chamber provided in transfer chamber TF4. For example, during this time, other processing (such as forming an OS transistor) can be performed in cluster 20 and cluster 30.

[0148] <Example of manufacturing method> A manufacturing method of a display device according to one embodiment of the present invention will be described below, taking the display device included in the display device 100 shown in the above configuration example as an example.

[0149] 14A to 16D are schematic cross-sectional views illustrating steps in a manufacturing method of a display device, which will be described below. Note that the transistor 116, which is a component of the pixel circuit, and the transistor 115, which is a component of the driver circuit, shown in FIG. 13A, are omitted in FIG.

[0150] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, an atomic layer deposition (ALD) method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming a thin film by the above method.

[0151] Furthermore, methods such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating can be used to form thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices and to apply resins and the like used in lithography processes. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming thin films by the above-described methods. A manufacturing apparatus according to one embodiment of the present invention can also include an apparatus for applying resins by the above-described methods.

[0152] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed using a nanoimprint method. Furthermore, a method of directly forming island-shaped thin films by a film formation method using a masking mask may be used in combination.

[0153] There are two typical methods for processing thin films using photolithography. One is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask. The other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0154] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. Instead of light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0155] The thin film can be etched by dry etching, wet etching, etc. The manufacturing apparatus according to one embodiment of the present invention can include an apparatus for processing the thin film by the above-described method.

[0156] <Preparation of substrate 60> A substrate having heat resistance sufficient to withstand at least the subsequent heat treatment can be used as the substrate 60. When an insulating substrate is used as the substrate 60, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0157] In particular, as the substrate 60, it is preferable to use a substrate on which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate or the insulating substrate. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may be constituted.

[0158] <Formation of Pixel Circuit and Pixel Electrode 111> Subsequently, a plurality of pixel circuits are formed on the substrate 60, and pixel electrodes 111 are formed on the respective pixel circuits. First, a conductive film to be the pixel electrode 111 is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. Thereafter, the pixel electrode 111 can be formed by removing the resist mask.

[0159] As the pixel electrode 111, it is preferable to apply a material (for example, silver or aluminum) having a reflectance as high as possible in the entire wavelength range of visible light. The pixel electrode 111 formed of the material can be referred to as an electrode having light reflectivity. Thereby, not only can the light extraction efficiency of the light-emitting element be increased, but also the color reproducibility can be improved.

[0160] <Formation of Insulating Layer Subsequently, an insulating layer 131 is formed covering the end portion of the pixel electrode 111 (see FIG. 14A). As the insulating layer 131, an organic insulating film or an inorganic insulating film can be used. The insulating layer 131 preferably has a tapered shape at the end portion in order to improve the step coverage of the subsequent EL film. In particular, when an organic insulating film is used, it is preferable to use a photosensitive material because it is easy to control the shape of the end portion depending on the exposure and development conditions.

[0161] <Formation of EL Film 112Rf> Subsequently, an EL film 112Rf which will later become the EL layer 112R is formed on the pixel electrode 111 and the insulating layer 131 (see FIG. 14B).

[0162] The EL film 112Rf has a film containing at least a red light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated. The EL film 112Rf can be formed, for example, by a vapor deposition method, a sputtering method, or the like. Note that the present invention is not limited to this, and the above-described film formation methods can be appropriately used.

[0163] <Formation of the resist mask 143a> Subsequently, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting element 110R (see FIG. 14C). The resist mask 143a can be formed by a lithography process.

[0164] <Formation of the EL layer 112R> Subsequently, the EL film 112Rf is etched using the resist mask 143a as a mask to form the EL layer 112R in an island shape (see FIG. 14D). A dry etching method or a wet etching method can be used for the etching process.

[0165] <Formation of the EL film 112Gf> Subsequently, an EL film 112Gf that will later become the EL layer 112G is formed on the exposed pixel electrode 111 and the insulating layer 131, and on the resist mask 143a (see FIG. 15A).

[0166] The EL film 112Gf has a film containing at least a green light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0167] <Formation of the resist mask 143b> Subsequently, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting element 110G (see FIG. 15B). The resist mask 143b can be formed by a lithography process.

[0168] <Formation of the EL layer 112G> Subsequently, using the resist mask 143b as a mask, the EL film 112Gf is etched to form the EL layer 112G in an island shape (see Fig. 15C). The dry etching method or the wet etching method can be used for the etching process.

[0169] <Formation of EL film 112Bf> Subsequently, an EL film 112Bf, which will later become the EL layer 112B, is formed on the exposed pixel electrode 111 and the insulating layer 131, as well as on the resist masks 143a and 143b (see Fig. 15D).

[0170] The EL film 112Bf has a film containing at least a blue light-emitting organic compound. In addition, a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated may also be used.

[0171] <Formation of resist mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting element 110B (see Fig. 16A). The resist mask 143b can be formed by a lithography process.

[0172] <Formation of EL layer 112B> Subsequently, using the resist mask 143c as a mask, the EL film 112Bf is etched to form the EL layer 112G in an island shape (see Fig. 16B). The dry etching method or the wet etching method can be used for the etching process.

[0173] <Removal of resist mask> Subsequently, the resist masks 143a, 143b, and 143c are removed (see Fig. 16C). For the removal of the resist mask, for example, a peeling method using an organic solvent can be used. Alternatively, ashing using a dry etching apparatus may also be used.

[0174] <Formation of common electrode> Next, a conductive film that will become the common electrode 113 of the organic EL element is formed on the EL layers 112R, 112G, and 112B exposed in the previous step, and on the insulating layer 131. The common electrode 113 can be a single film of either a thin metal film (e.g., an alloy of silver and magnesium) that transmits light emitted from the light-emitting layer, or a light-transmitting conductive film (e.g., indium tin oxide or an oxide containing one or more of indium, gallium, and zinc), or a laminate film of both. The common electrode 113 made of such a film can be said to be an electrode that has light transparency. A vapor deposition apparatus and / or a sputtering apparatus can be used in the process of forming the conductive film that will become the common electrode 113.

[0175] By providing a light-reflective electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission light-emitting element is formed.

[0176] <Protective layer formation> Subsequently, a protective layer 121 is formed on the common electrode 113 (see FIG. 16D). A sputtering device, a CVD device, an ALD device, or the like can be used in the step of forming the protective layer.

[0177] <Manufacturing equipment example 1> An example of a manufacturing apparatus that can be used for the manufacturing process from the formation of the pixel circuit and EL film 112Rf to the formation of the protective layer 121 is shown in Fig. 17. The basic configuration of the manufacturing apparatus shown in Fig. 17 is the same as that of the manufacturing apparatus shown in Fig. 1, but this example embodies the necessary apparatus in consideration of the transistor manufacturing process, the formation of R, G, and B light-emitting elements, and shortening of process time by multitasking.

[0178] The following will specifically describe Cluster 20E and Cluster 30E, as well as Cluster 20 and Cluster 30. FIG. 17 is a perspective view schematically showing the entire manufacturing apparatus, and illustrations of utility facilities and gate valves are omitted. Further, Transfer Chambers TF1 to TF7 and Load Lock Chambers LL1 and LL2 are shown with their interiors visualized for clarity.

[0179] <Cluster 20E> Cluster 20E has a block having Transfer Chamber TF5 and vacuum process apparatuses EVC1 to EVC11, and a block having Transfer Chamber TF7 and vacuum process apparatuses EVC12 to EVC14. Note that, without dividing Cluster 20E into two blocks, Transfer Chamber TF6 and vacuum process apparatuses EVC1 to EVC14 may be formed as one block.

[0180] Transfer Chamber TF6 has transfer devices 70f1 and 70f2. Transfer Chamber TF7 has transfer device 70g. Here, transfer devices 70f1 and 70f2 are self-propelled and can move along rail 78.

[0181] <EVC1 to EVC5> Vacuum process apparatuses EVC1 to EVC5 are evaporation apparatuses for forming EL films 112Rf, EL film 112Gf, and EL film 112Bf. For example, each of vacuum process apparatuses EVC2, EVC3, and EVC4 can be a forming apparatus for a light-emitting layer (R), a light-emitting layer (G), and a light-emitting layer (B), respectively. Further, vacuum process apparatuses EVC1 and EVC5 can be assigned as forming apparatuses for common layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.

[0182] <EVC6, EVC7> The vacuum processing apparatus EVC6 can be used as the detaching device for the substrate transfer jig described in FIGS. 2A and 2B. The substrate can be carried into the vacuum processing apparatus EVC6 by the transfer device 70f1 and attached to the substrate transfer jig. Also, the substrate transfer jig can be removed from the vacuum processing apparatus EVC6, and the substrate alone can be carried out.

[0183] The vacuum processing apparatus EVC7 can be used as the substrate inversion device described in FIGS. 5A and 5B. The work substrate 50 can be inverted as needed in the vacuum processing apparatus EVC7.

[0184] <EVC8, EVC9> The vacuum processing apparatuses EVC8 and EVC9 can be used as film forming apparatuses for forming the common electrode 113. For example, the vacuum processing apparatus EVC8 can be used as an evaporation apparatus for forming a metal film that transmits visible light. Also, the vacuum processing apparatus EVC9 can be used as a sputtering apparatus for forming a transparent conductive film.

[0185] <EVC10, EVC11> The vacuum processing apparatus EVC10 can be used as a film forming apparatus for forming the protective layer 121. For example, the vacuum processing apparatus EVC10 can be a sputtering apparatus. Alternatively, it may be a CVD apparatus or an ALD apparatus, etc. Or, a separate vacuum processing apparatus EVC may be provided, and a plurality of different film forming apparatuses may be provided to form the protective layer 121 as a laminated film.

[0186] The vacuum processing apparatus EVC11 can be used as a dry etching apparatus for forming the EL layers 112R, 112G, and 112B and removing the resist mask. Or, a separate vacuum processing apparatus EVC may be provided, and a separate ashing apparatus may be provided.

[0187] <EVC12 to EVC14> One or more of the vacuum process apparatuses EVC12, EVC13, and EVC14 can be a vacuum baking apparatus. In an organic EL element, the reliability deteriorates due to the intrusion of impurities such as water. Therefore, it is preferable to perform vacuum baking (heat treatment under reduced pressure) as a process before forming the EL films 112Rf, EL films 112Gf, and EL films 112Bf to remove impurities such as water adhering to the work substrate 50.

[0188] In the above, an example in which one type of apparatus is arranged one by one has been shown, but two or three apparatuses with a relatively long process time may be arranged. For example, all of the vacuum process apparatuses EVC12, EVC13, and EVC14 can be vacuum baking apparatuses.

[0189] <Cluster 30E> Cluster 30E has a transfer chamber TF5 and atmospheric pressure process apparatuses EAC1 to EAC9.

[0190] The transfer chamber TF5 has a transfer device 70e. The transfer device 70e is self-propelled and can move on the rail 77.

[0191] <EAC1 to EAC3> One or more of a cleaning device, a wet etching device, a resist stripping device, a counter substrate bonding device, etc. can be assigned to the atmospheric pressure process apparatuses EAC1 to EAC3. It may be appropriately selected according to the process.

[0192] <EAC4 to EAC9> The atmospheric pressure process apparatuses EAC4 to EAC9 can be apparatuses used for a lithography process. For example, the atmospheric pressure process apparatus EAC4 can be a resin (photoresist) coating apparatus, the atmospheric pressure process apparatus EAC5 can be an exposure apparatus, and the atmospheric pressure process apparatus EAC6 can be a developing apparatus.

[0193] Alternatively, the atmospheric pressure process device EAC4 can be a resin (such as UV curable resin) coating device, the atmospheric pressure process device EAC5 can be a nanoimprint device, and the atmospheric pressure process device EAC6 can be a developing device. When the developing device is not used, another device may be assigned to the atmospheric pressure process device EAC6.

[0194] In addition, the atmospheric pressure process devices EAC7 to EAC9 can be baking devices. In the baking device, pre-baking, post-baking of the photoresist, or drying after cleaning can be performed.

[0195] <Cluster 20> Cluster 20 has a block having a transfer chamber TF2 and vacuum process devices VC1 to VC11.

[0196] The transfer chamber TF2 has a transfer device 70b. Here, the transfer device 70b is self-propelled and can move along the rail 73.

[0197] <VC1 to VC3> The vacuum process devices VC1 to VC3 can be sputtering devices for forming an insulating layer, a semiconductor layer (such as a metal oxide), a conductive layer, etc. For example, each of the vacuum process devices VC1, VC2, and VC3 can be a dedicated device for forming an insulating layer, a semiconductor layer, and a conductive layer, respectively.

[0198] <VC4 to VC6> The vacuum process devices VC4 to VC6 can be dry etching devices for performing pattern formation of each layer, contact hole formation, and resist mask removal (ashing) after lithography. Alternatively, a separate vacuum process device VC can be provided as an ashing device.

[0199] <VC7 to VC9> The vacuum process apparatuses VC7 to VC9 are CVD apparatuses for forming an insulating layer, a conductive layer, etc. For example, for forming an insulating film, a plasma CVD apparatus can be used, and for forming a conductive layer (metal), thermal CVD using a source gas containing metal can be used.

[0200] <VC10, VC11> The vacuum process apparatus VC10 can be an ALD apparatus. Since the ALD apparatus has excellent step coverage, it can be used for a protective layer, a gate insulating layer, etc. Also, the vacuum process apparatus VC11 can be a plasma processing apparatus. In the plasma processing apparatus, oxygen can be supplied to the gate insulating layer, and the gate insulating layer can be made of high quality. Also, when an OS transistor is used, oxygen can be supplied to the channel formation region through the gate insulating layer.

[0201] <Cluster 30> Cluster 30 has a transfer chamber TF3 and atmospheric pressure process apparatuses AC1 to AC9.

[0202] The transfer chamber TF3 has a transfer device 70e. The transfer device 70e is self-propelled and can move on the rail 74.

[0203] <AC1, AC2> For the atmospheric pressure process apparatuses AC1 and AC2, any one or more of a cleaning device, a wet etching device, a CMP device, a resist stripping device, etc. can be assigned. It can be appropriately selected according to the process. Note that an atmospheric pressure process apparatus AC can be further provided and any of the above devices can be assigned.

[0204] <AC4 to AC9> The atmospheric pressure process apparatuses AC4 to AC6 can be apparatuses used for a lithography process. The configuration of the atmospheric pressure process apparatuses AC4 to AC6 can be the same as that of the atmospheric pressure process apparatuses EAC4 to EAC6.

[0205] The atmospheric pressure process equipment AC7 to AC9 may be a baking equipment, which may perform pre-baking, post-baking, or drying after cleaning of the photoresist.

[0206] <Production equipment example 2> Fig. 18 shows an example in which the manufacturing equipment shown in Fig. 9 is used as the basic configuration and the necessary equipment is specified in the same manner as in Fig. 17. The load / unload unit 10, cluster 20, cluster 30, and cluster 30E can be configured in the same manner as shown in Fig. 17, except that the configuration of cluster 20E is enlarged and that transfer chamber TF7 is integrated with transfer chamber TF6.

[0207] 9 to 11 are provided to perform batch processing of substrates 60, and the size of transfer device 70f2 is increased. Note that although the configuration is such that transfer device 70f3 similar to transfer device 70f2 is provided, transfer device 70f3 does not necessarily have to be provided.

[0208] Furthermore, the vacuum process equipment EVC12 to EVC14 are vacuum baking equipment, but they do not need to be compatible with large sizes. The vacuum baking process is performed before the transfer jig is attached to the substrate 60, so processing can be performed on a substrate 60 basis.

[0209] 17, the processes and processing equipment using cluster 20E and cluster 30E, the front and back sides of the substrate (up: face-up method, down: face-down method), and elements corresponding to the above-mentioned manufacturing method are summarized in Tables 1 and 2. Note that the description of the load lock chamber LL2 and the loading and unloading of the substrate into and out of each device is omitted.

[0210] Table 1 shows the steps up to forming one type of EL layer after forming the pixel electrode 111. Note that the EL layer is formed by performing the corresponding steps for each of R, G, and B, so steps No. 1 to No. 16 in Table 1 are performed three times.

[0211] [Table 1]

[0212] Table 2 shows the steps after the EL layers 112R, 112G, and 112B are formed, up to the step of forming the protective layer 121. Note that the replacement of the substrate transport jig in step No. 55 can be achieved by replacing the jig 54 with one having an opening larger than the opening of the jig 54 attached in step No. 50. This allows a protective layer to be provided that covers the edge of the common electrode.

[0213] [Table 2]

[0214] The manufacturing apparatus according to one embodiment of the present invention has the function of automatically carrying out step No. 1 shown in Table 1 to step No. 59 shown in Table 2.

[0215] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes. [Explanation of symbols]

[0216] AC1: Atmospheric pressure process equipment, AC2: Atmospheric pressure process equipment, AC3: Atmospheric pressure process equipment, AC4: Atmospheric pressure process equipment, AC5: Atmospheric pressure process equipment, AC6: Atmospheric pressure process equipment, AC7: Atmospheric pressure process equipment, AC8: Atmospheric pressure process equipment, AC9: Atmospheric pressure process equipment, EAC1: Atmospheric pressure process equipment, EAC2: Atmospheric pressure process equipment, EAC3: Atmospheric pressure process equipment, EAC4: Atmospheric pressure process equipment, EAC5: Atmospheric pressure process equipment, EAC6: Atmospheric pressure process equipment, EAC7: Atmospheric pressure process equipment, EAC8: Atmospheric pressure process equipment, EAC9: Atmospheric pressure process equipment, EVC1: Empty process equipment, EVC2: Vacuum process equipment, EVC3: Vacuum process equipment, EVC4: Vacuum process equipment, EVC5: Vacuum process equipment, EVC6: Vacuum process equipment, EVC7: Vacuum process equipment, EVC8: Vacuum process equipment, EVC9: Vacuum process equipment, EVC10: Vacuum process equipment, EVC11: Vacuum process equipment, EVC12: Vacuum process equipment, EVC13: Vacuum process equipment, EVC14: Vacuum process equipment, LL1: Load lock chamber, LL2: Load lock chamber, LU1: Load unload chamber, TF1: Transfer chamber, TF2: Transfer chamber, TF3: Transfer chamber, TF4: Transfer chamber, TF5: Transfer chamber, TF6: Transfer chamber, TF7: Transfer chamber, VC1: Vacuum process device, VC2: Vacuum process device, VC3: Vacuum process device, VC4: Vacuum process device, VC5: Vacuum process device, VC6: Vacuum process device, VC7: Vacuum process device, VC8: Vacuum process device, VC9: Vacuum process device, VC10: Vacuum process device, VC11: Vacuum process device, 10: Load / unload unit, 20: Cluster, 20E: Cluster, 3 0: cluster, 30E: cluster, 45: substrate rotation mechanism, 46: stage, 47: substrate rotation mechanism, 50: work substrate, 51: jig, 52: through hole, 53: through hole, 54: jig, 55: magnet, 56: convex portion, 57: shaped portion, 58: through hole, 59: counterbore portion, 60: substrate, 61: notch, 62: pin, 65: camera, 66: transport device, 69: pusher pin, 70: transport device, 70a: transport device, 70b: transport device, 70c: transport device, 70d: transport device, 70e: transport device, 70f1: transport device, 70f2: transport device, 70f3: transport device, 70g: transport device,71: hand unit, 73: rail, 74: rail, 75: rail, 76: rail, 77: rail, 78: rail, 80: substrate inverting device, 81: stand, 82: column, 83: rotation mechanism, 84: rotation unit, 85a: hand unit, 85b: hand unit, 86a: horizontal movement mechanism, 86b: horizontal movement mechanism, 87: shaping unit, 90a: deposition device, 90b: dry etching device, 91: rail, 92: deposition source, 95: cathode, 96: anode, 100: display device, 110B: light-emitting element, 110G: light-emitting element Optical element, 110R: light-emitting element, 111: pixel electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 112R: EL layer, 112Rf: EL film, 112W: EL layer, 113: common electrode, 114B: colored layer, 114G: colored layer, 114R: colored layer, 115: transistor, 116: transistor, 117: transistor, 121: protective layer, 131: insulating layer, 143a: resist mask, 143b: resist mask, 143c: resist mask,

Claims

[Claim 1] A manufacturing apparatus for a pixel circuit and a manufacturing apparatus for a light-emitting device, The light-emitting device manufacturing apparatus includes: a first load lock chamber, a first cluster, and a second cluster; the first load lock chamber is connected to the first cluster via a first gate valve; the first load lock chamber is connected to the second cluster via a second gate valve; the first load lock chamber is controlled to a reduced pressure or an inert gas atmosphere; the first cluster is controlled to a reduced pressure; The second cluster is controlled to be in an inert gas atmosphere; the first cluster includes a first transfer device, a plurality of film forming devices, and an etching device; the second cluster includes a second transfer device and a plurality of devices for performing a lithography process; the pixel circuit manufacturing apparatus has a second load lock chamber; the first load lock chamber is connected to the second load lock chamber via a transfer chamber; A display device manufacturing apparatus having a function of forming a light-emitting device having an organic compound on a pixel electrode formed on a substrate by the pixel circuit manufacturing apparatus.

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