Active Voltage Compensator

Abstract

The present invention provides an active voltage compensation device for actively compensating for noise generated in a common mode in each of at least two or more large current paths, the active voltage compensation device including a sensing unit for sensing a common mode noise current in the large current paths and generating an output signal corresponding to the noise current, an amplifier for amplifying the output signal of the sensing unit and generating an amplified signal, an amplified signal feedback unit for transmitting a feedback signal corresponding to the amplified signal of the amplifier unit back to the amplifier, and a compensation unit for generating a compensation voltage on the large current paths based on an output voltage corresponding to the amplified signal.

Description

[Technical field]

[0001] The present invention relates to an active voltage compensation device, and more particularly to an active voltage compensation device that actively compensates for a noise voltage input in common mode onto two or more large current paths connected to a power system. [Background technology]

[0002] In general, electrical equipment such as home appliances, industrial electrical products, and electric vehicles emit noise during operation. For example, noise may be emitted from electronic equipment through power lines due to the switching operation of a power conversion device. If such noise is left unchecked, it is not only harmful to the human body but also causes malfunctions or failures in peripheral components and other electronic equipment. The electromagnetic interference that electronic equipment causes to other equipment is called EMI (Electromagnetic Interference), and among them, the noise that is transmitted via wires and board wiring is called Conducted Emission (CE) noise.

[0003] In order to ensure that electronic devices operate without causing damage to peripheral components and other devices, the amount of EMI noise emitted by all electronic products is strictly regulated. Therefore, most electronic products must include a noise reduction device (e.g., EMI filter) that reduces EMI noise current to meet the regulations on noise emission. For example, EMI filters are essential in white-light appliances such as air conditioners, electric vehicles, aviation, and energy storage systems (ESS). Conventional EMI filters use a common mode choke (CM choke) to reduce common mode (CM) noise, which is a type of conducted emission (CE) noise. A common mode (CM) choke is a passive filter that plays a role in "suppressing" common mode noise.

[0004] On the other hand, in order to maintain the noise reduction performance of passive EMI filters in high power systems, the size or number of common mode chokes must be increased, which results in a significant increase in the size and cost of passive EMI filters in high power products.

[0005] To overcome the limitations of passive EMI filters, interest in active EMI filters has been growing. Active EMI filters can remove EMI noise by detecting the EMI noise and generating a signal to cancel the noise using active circuitry. Active EMI filters include active circuitry that generates an amplified signal in response to the detected noise signal. Summary of the Invention [Problem to be solved by the invention]

[0006] The present invention is intended to alleviate the above-mentioned problems, and has an object to provide an active voltage compensation device that actively compensates for noise voltage generated in common mode on a large current path, thereby reducing common mode noise.

[0007] Meanwhile, when actually applying an active EMI filter to an electronic product, mass production of semiconductor devices is required to meet various demands. If discrete devices (or components) are used to manufacture an active EMI filter for practical use, the number of devices for the active circuit increases and various components are required to improve the function of the active EMI filter. Therefore, there is a problem that the size and cost of the active EMI filter increase in order to achieve higher performance.

[0008] The present invention aims to improve the above-mentioned problems, and provides an active voltage compensation device including an integrated circuit part and a non-integrated circuit part, and can provide an active EMI filter using a custom integrated circuit (IC) that can be used in various power systems. The integrated circuit part is a single chip that includes essential components of the active voltage compensation device, and the non-integrated circuit part can be configured to realize active EMI filters of various designs.

[0009] On the other hand, when the voltage compensation device includes an active element, there is a problem that the active element may break down or malfunction when a high voltage disturbance such as a lightning strike occurs.

[0010] The present invention has been made to alleviate the above-mentioned problems, and has an object to provide an active voltage compensation device that is protected from disturbances such as lightning strikes when mounted in an electrical device.

[0011] On the other hand, in an active EMI filter, the active circuitry must be powered to operate. For example, the output of a switching mode power supply (SMPS) can be used as the power source for the active circuitry. The active circuitry may require a specific voltage (e.g. 12V), but in some systems, the SMPS may not output the specific voltage required to drive the active circuitry, which can cause the active circuitry to become unstable.

[0012] The present invention has been made to alleviate the above-mentioned problems, and has an object to provide an active voltage compensation device including an internalized power conversion section.

[0013] On the other hand, conventional voltage compensation devices have a large overall volume and a structure in which the elements are directly exposed to the external environment. Therefore, when used in a system placed in an external environment, the elements are easily deteriorated by external impacts and environmental influences, which can have a significant impact on the characteristics of the filter.

[0014] In addition, there is a problem in that failures in the active circuitry contained in the active EMI filter are difficult to identify with the naked eye.Because the active EMI filter only performs a noise reduction function, even if the active circuitry fails, the power system can still operate normally, so it is difficult to determine whether the active circuitry has failed based on the current situation.

[0015] The present invention is intended to improve the above-mentioned problems, and aims to provide a voltage compensation device that allows easy confirmation of whether the device is operating normally without disassembling the voltage compensation device even in a state independent of the external environment.

[0016] Another object of the present invention is to provide an active voltage compensation device in which an active circuit section and a malfunction detection circuit are both incorporated in a single integrated circuit (IC) chip.

[0017] However, these challenges are exemplary and the scope of the present invention is not limited thereto. [Means for solving the problem]

[0018] An embodiment of the present invention provides an active voltage compensation device that actively compensates for noise generated in a common mode in each of at least two or more large current paths, the active voltage compensation device including: a sensing unit that senses a common mode noise current on the large current path and generates an output signal corresponding to the noise current; an amplifier unit that amplifies the output signal of the sensing unit to generate an amplified signal; an amplified signal feedback unit that transmits a feedback signal corresponding to the amplified signal of the amplifier unit back to the amplifier unit; and a compensation unit that generates a compensation voltage on the large current path based on an output voltage corresponding to the amplified signal. Effect of the Invention

[0019] The active voltage compensator according to the various embodiments of the present invention configured as described above can provide a voltage compensator that does not significantly increase cost, area, volume, and weight even in a high power system. Specifically, the active voltage compensator according to the various embodiments of the present invention can reduce cost, area, volume, and weight compared to a passive compensator including a CM choke.

[0020] Additionally, active voltage compensation devices according to various embodiments of the present invention may provide an active voltage compensation device that can operate independently of a CM choke, rather than being parasitic on the CM choke.

[0021] Furthermore, the active voltage compensation device according to various embodiments of the present invention can perform a voltage compensation function regardless of the load of the surrounding conditions from which the EMI noise is emitted.

[0022] Furthermore, since the active voltage compensation devices according to various embodiments of the present invention include an integrated circuit portion, they can be universally applied to active voltage compensation devices of various designs, and their size can be minimized compared to cases where they include discrete semiconductor devices.

[0023] Furthermore, the active voltage compensation apparatus according to various embodiments of the present invention can be used in a variety of power electronic products regardless of their power ratings, and thus is scalable to high power and high noise systems.

[0024] Moreover, active voltage compensation devices according to various embodiments of the present invention are easy to mass produce and can be commercially available as stand-alone modules with versatility.

[0025] Furthermore, the active voltage compensation devices according to the various embodiments of the present invention have an active circuit terminal that is electrically isolated from the power line, thereby making it possible to stably protect the elements included in the active circuit terminal.

[0026] Furthermore, active voltage compensation devices according to various embodiments of the present invention can protect against external overvoltages such as lightning strikes, and therefore can operate stably regardless of the characteristics of the surrounding electrical system.

[0027] Furthermore, the active voltage compensation device according to various embodiments of the present invention can be applied to any of a variety of systems by having an internalized power conversion section.

[0028] Furthermore, in the active voltage compensator according to various embodiments of the present invention, an integrated circuit unit and a power conversion unit are incorporated in a single integrated circuit (IC) chip, so that the IC chip can be commercially available as an independent component with versatility, and a voltage compensator including the IC chip can be manufactured and commercialized as an independent module. The integrated circuit unit included in such a voltage compensator can operate stably regardless of the characteristics of the surrounding electrical system.

[0029] Furthermore, the active voltage compensation device according to various embodiments of the present invention can provide a miniaturized / modularized active voltage compensation device, and in particular can provide a voltage compensation device that allows easy checking of whether the device is operating normally without disassembling the voltage compensation device.

[0030] Furthermore, the active voltage compensation device according to various embodiments of the present invention can provide a single integrated circuit (IC) chip in which both the integrated circuit unit and the malfunction detection unit are integrated. By incorporating the malfunction detection unit in a chip in which the integrated circuit unit is integrated, it is possible to reduce the size and cost compared to a case in which the malfunction detection unit is separately configured using general commercially available elements.

[0031] In addition, by integrating the integrated circuit unit and the malfunction detection unit into a single IC chip, the IC chip can be commercialized as an independent component with versatility, and a voltage compensation device including the IC chip can be manufactured and commercialized as an independent module. Such a voltage compensation device can detect malfunctions of the device as an independent module regardless of the characteristics of the surrounding electrical system.

[0032] Of course, the scope of the present invention is not limited to such effects. [Brief description of the drawings]

[0033] [Figure 1] 1 is a schematic diagram showing a configuration of a system including an active voltage compensation device according to an embodiment of the present invention. [Diagram 2] 2 is a specific example of the active voltage compensation device shown in FIG. 1, and is a schematic diagram of an active voltage compensation device according to an embodiment of the present invention. [Diagram 3] FIG. 3 is a more specific example of the embodiment shown in FIG. 2, and is a schematic diagram of an active voltage compensation device according to an embodiment of the present invention. [Figure 4] FIG. 4 is a more specific example of the embodiment shown in FIG. 3, and is a schematic diagram of an active voltage compensation device according to an embodiment of the present invention. [Diagram 5] FIG. 4 is a more specific example of the embodiment shown in FIG. 3, and is a schematic diagram of an active voltage compensation device according to an embodiment of the present invention. [Figure 6] 13 is a schematic diagram showing a configuration of a system including an active voltage compensation device according to another embodiment of the present invention. [Figure 7] 13 is a schematic diagram illustrating a configuration of a system including an active voltage compensation device according to yet another embodiment of the present invention. [Figure 8] 2 is a specific example of the amplifier unit shown in FIG. 1, showing an example of the functional configuration of the amplifier unit according to one embodiment of the present invention. [Figure 9]9 shows a specific example of an active voltage compensation device including the amplifier section shown in FIG. 8. [Figure 10] 10 shows a specific example of the first integrated circuit unit of the first amplifier unit shown in FIG. [Figure 11] 13 is a schematic diagram illustrating a configuration of an active voltage compensation device according to still another embodiment of the present invention. [Figure 12] 13 is a schematic diagram illustrating a configuration of a system including an active voltage compensation device according to yet another embodiment of the present invention. [Figure 13] FIG. 13 is a specific example of the active voltage compensation device shown in FIG. 12, and is a schematic diagram of an active voltage compensation device according to an embodiment of the present invention. [Figure 14] 13 is a schematic diagram illustrating a configuration of an active voltage compensation device according to still another embodiment of the present invention. [Figure 15] 13 is a schematic diagram illustrating a configuration of a system including an active voltage compensation device according to yet another embodiment of the present invention. [Figure 16] 16 shows an example of the functional configuration of an amplifier section and a power management section of the active voltage compensation device shown in FIG. 15. [Figure 17] FIG. 16 is a specific example of the active voltage compensation device shown in FIG. 15, and is a schematic diagram of an active voltage compensation device according to an embodiment of the present invention. [Figure 18] 2 illustrates a schematic diagram of a power manager according to an embodiment of the present invention; [Figure 19] 19 illustrates a more specific example of the power conversion unit illustrated in FIG. 18. [Figure 20] 13 is a schematic diagram illustrating a configuration of an active voltage compensation device according to still another embodiment of the present invention. [Figure 21] 13 is a schematic diagram illustrating a configuration of a system including an active voltage compensation device according to yet another embodiment of the present invention. [Figure 22] FIG. 22 is a specific example of the active voltage compensation device shown in FIG. 21, and is a schematic diagram of an active voltage compensation device according to an embodiment of the present invention. [Diagram 23] 4 shows an example of a functional configuration of an amplifier section and a malfunction detector section according to an embodiment of the present invention. [Figure 24] FIG. 23 shows a more specific example of the embodiment shown in FIG. 22, and is a schematic diagram of an active voltage compensation device according to one embodiment of the present invention. [Diagram 25] 25 shows a specific example of the first integrated circuit unit and the first malfunction detection unit of the first amplifier unit shown in FIG. 24. [Figure 26] FIG. 23 shows a more specific example of the embodiment shown in FIG. 22, and is a schematic diagram of an active voltage compensation device according to one embodiment of the present invention. [Figure 27] 3 shows a functional configuration of a malfunction detection unit according to an embodiment of the present invention. [Figure 28] 1 is a schematic diagram of a logic circuit according to one embodiment of the present invention; [Figure 29] 4 is a circuit diagram of a second integrated circuit unit and a malfunction detection unit according to an embodiment of the present invention. FIG. [Diagram 30] 13 is a schematic diagram illustrating a configuration of an active voltage compensation device according to still another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] An embodiment of the present invention provides an active voltage compensation device that actively compensates for noise generated in a common mode in each of at least two or more large current paths, the active voltage compensation device including: a sensing unit that senses a common mode noise current on the large current path and generates an output signal corresponding to the noise current; an amplifier unit that amplifies the output signal of the sensing unit to generate an amplified signal; an amplified signal feedback unit that transmits a feedback signal corresponding to the amplified signal of the amplifier unit back to the amplifier unit; and a compensation unit that generates a compensation voltage on the large current path based on an output voltage corresponding to the amplified signal.

[0035] In one embodiment of the present invention, the amplifier unit may include a first amplifier unit and a second amplifier unit, the first amplifier unit amplifying an output signal of the sensing unit to generate the output voltage, and the second amplifier unit may be connected to the first amplifier unit to generate an output current required for noise compensation.

[0036] In an embodiment of the present invention, the sensing unit may have a form in which an electric wire for generating an input voltage of the amplifier unit is overlapped and wound around a CM choke around which the two or more large current paths are wound.

[0037] In one embodiment of the present invention, the compensation unit may be formed such that an electric wire for outputting an output signal of the amplifier unit passes through a core, and the large current path passes through the core or is wound around the core one or more times.

[0038] In one embodiment of the present invention, the at least two or more high current paths transmit a high current supplied by a second device to a first device, the amplifier section includes a non-integrated circuit section and a single-chip integrated circuit section, the non-integrated circuit section is designed according to at least one or more power systems of the first device and the second device, and the single-chip integrated circuit section may be independent of the rated power specifications of the first device and the second device.

[0039] In one embodiment of the present invention, the non-integrated circuit part may be designed according to the rated power of the first device.

[0040] In one embodiment of the present invention, depending on the design of the non-integrated circuit part, the single chip integrated circuit part may be used for the first device of a variety of power systems.

[0041] In one embodiment of the present invention, the one-chip integrated circuit unit may include a first integrated circuit unit and a second integrated circuit unit, and the second integrated circuit unit may include a first transistor, a second transistor, and one or more resistors.

[0042] In one embodiment of the invention, the first integrated circuit portion may include one or more transistors.

[0043] In one embodiment of the present invention, the sensing unit includes a sensing transformer, and the compensation unit includes a compensation transformer, and a configuration of the single-chip integrated circuit unit may be independent of a winding ratio between the sensing transformer and the compensation transformer and a target voltage gain of the amplifier unit.

[0044] In one embodiment of the present invention, the amplifier may further include a disturbance protection unit connected to the amplifier unit, and the disturbance protection unit may include a first disturbance protection unit connected in parallel to an output terminal of the sensing unit where the output signal is generated, a second disturbance protection unit connected in parallel to an input terminal of the compensation unit, and a third disturbance protection unit connected to an output terminal of the amplified signal feedback unit.

[0045] In one embodiment of the present invention, the first disturbance protection unit, the second disturbance protection unit and the third disturbance protection unit may have a first impedance when a voltage less than a predetermined threshold voltage is applied to the output terminal of the sensing unit, the input terminal of the compensating unit and the output terminal of the amplified signal feedback unit, and may have a second impedance lower than the first impedance when a voltage equal to or greater than the predetermined threshold voltage is applied to the output terminal of the sensing unit, the input terminal of the compensating unit and the output terminal of the amplified signal feedback unit.

[0046] In one embodiment of the present invention, the first disturbance protection unit, the second disturbance protection unit and the third disturbance protection unit may each include a TVS (Transient Voltage Suppression) diode element, and a junction capacitance of the TVS diode element may be several hundred pF or less.

[0047] In one embodiment of the present invention, the sensing unit includes a sensing transformer including a primary side disposed on the high current path and a secondary side that outputs the output signal to the amplifier unit, and the first disturbance protection unit can limit a voltage equal to or greater than a threshold voltage induced by the primary side to the secondary side based on a voltage applied to the at least two high current paths, to a voltage equal to or less than the threshold voltage, and transmit the limit to the amplifier unit.

[0048] In one embodiment of the present invention, the compensation unit includes a transformer having a primary side connected to the output terminal of the amplifier unit and a secondary side connected to the at least two or more large current paths, and the second disturbance protection unit can limit a voltage equal to or greater than a threshold voltage induced by the secondary side to the primary side based on a voltage applied to the at least two or more large current paths, to a voltage equal to or less than the threshold voltage, and transmit the limit to the amplifier unit.

[0049] In an embodiment of the present invention, the power supply device may further include a power management unit that receives a first voltage from a power supply device that supplies power and converts the first voltage into a second voltage of a specified magnitude.

[0050] In one embodiment of the present invention, the amplifier unit is driven by a second voltage, and active elements included in the amplifier unit and active elements included in the power management unit may be integrated into a single integrated circuit (IC) chip.

[0051] In one embodiment of the present invention, the power management unit may include a power conversion unit that generates a switching signal for outputting a second voltage of a predetermined magnitude from a first voltage of an arbitrary magnitude, a power management feedback unit that enables the power management unit to output the second voltage of a predetermined magnitude by transmitting a voltage signal output from the power conversion unit back to the power conversion unit, and a filter unit that passes only a DC component of the voltage signal.

[0052] In one embodiment of the present invention, the power conversion section may be integrated into the integrated circuit (IC) chip, and at least a portion of the power management feedback section and the filter section may be discrete commercial elements located outside the integrated circuit (IC) chip.

[0053] In one embodiment of the present invention, the power conversion unit may include a regulator that generates a low DC voltage for driving an internal circuit of the power conversion unit.

[0054] In one embodiment of the present invention, the power conversion unit may include a pulse width modulation circuit that generates the switching signal using the DC low voltage provided from the regulator, and a first switch and a second switch that are selectively turned on by the switching signal.

[0055] In one embodiment of the present invention, the at least two or more high current paths transmit a high current supplied by a second device to a first device, and the power supply device may be a power supply device for the first device or the second device.

[0056] In an embodiment of the present invention, the power supply may further include a malfunction detector configured to generate a signal corresponding to an operating state of at least one of the large current path, the sensing unit, the amplifying unit, and the compensating unit.

[0057] In one embodiment of the present invention, the amplifier unit includes a first amplifier unit that amplifies an output signal of the sensing unit to generate the output voltage, and a second amplifier unit that is connected to the first amplifier unit and generates an output current required for noise compensation, and the malfunction detection unit may include a first malfunction detection unit that generates a signal corresponding to an operating state of the first amplifier unit, and a second malfunction detection unit that generates a signal corresponding to an operating state of the second amplifier unit.

[0058] In one embodiment of the present invention, the malfunction detection unit may further include a malfunction judgment unit that judges the operating state of the amplifier unit based on signals generated by the first malfunction detection unit and the second malfunction detection unit, respectively, and generates a malfunction detection signal.

[0059] In one embodiment of the present invention, the first malfunction detection unit generates a signal corresponding to an operating state of the first amplification unit based on a voltage of at least one node within the first amplification unit, and the second malfunction detection unit generates a signal corresponding to an operating state of the second amplification unit based on a voltage of at least one node within the second amplification unit.

[0060] In one embodiment of the present invention, the first malfunction detection unit detects a differential DC voltage at two nodes included in the first amplification unit and detects whether the differential DC voltage is within a predetermined range, and the second malfunction detection unit detects a differential DC voltage at two nodes included in the second amplification unit and detects whether the differential DC voltage is within a predetermined range.

[0061] In one embodiment of the present invention, the first malfunction detection unit and the second malfunction detection unit can respectively be a malfunction detection signal output unit that outputs a signal corresponding to the operating state and a malfunction detection signal output unit that displays a signal corresponding to the operating state.

[0062] In one embodiment of the present invention, at least a portion of the amplifier section and the malfunction detection section may be incorporated in a single integrated circuit (IC) chip.

[0063] In one embodiment of the present invention, the integrated circuit (IC) chip may include a terminal for connecting to a power supply device that supplies power to the amplifier unit and the malfunction detection unit, a terminal for connecting to a reference potential of the amplifier unit and the malfunction detection unit, and an output terminal of the malfunction detection unit.

[0064] In one embodiment of the present invention, the integrated circuit (IC) chip may include a terminal connected to a switch for selectively supplying power to the malfunction detection unit.

[0065] Further aspects, features, and advantages will become apparent from the accompanying drawings, the claims, and the following detailed description of the invention.

[0066] Since the present invention can be modified in various ways and has various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, as well as methods for achieving them, will become apparent by referring to the embodiments described in detail below together with the drawings. However, the present invention is not limited to the embodiments disclosed below, and can be realized in various forms.

[0067] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the drawings, the same or corresponding components are given the same reference numerals, and duplicate descriptions thereof will be omitted.

[0068] In the following embodiments, the terms "first" and "second" are used not in a limiting sense but to distinguish one component from another. In the following embodiments, the singular expression includes the plural expression unless the context clearly indicates otherwise. In the following embodiments, the terms "include" and "have" mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components are added. In the drawings, the size of the components may be exaggerated or reduced for the convenience of explanation. In the following embodiments, the connection of components, parts, units, modules, etc. includes not only the case where the components, parts, units, modules are directly connected, but also the case where the components, parts, units, modules are indirectly connected with each other through the intermediation of other components, parts, units, modules.

[0069] 1 is a schematic diagram showing a system configuration including an active voltage compensation device 100 according to an embodiment of the present invention. The active voltage compensation device 100 detects a voltage V 1 generated in a common mode (CM) from a first device 300 via two or more large current paths (e.g., 111, 112). n (e.g. EMI noise voltage) can be actively compensated for.

[0070] Referring to FIG. 1, the active voltage compensation apparatus 100 may include a sensing unit 120, an amplifying unit 130, an amplified signal feedback unit 150, and a compensating unit 160.

[0071] In this specification, the first device 300 may be various types of power systems that use the power source supplied by the second device 200. For example, the first device 300 may be a load that is driven by the power source supplied by the second device 200. The first device 300 may also be a load (e.g., an electric vehicle) that stores energy using the power source supplied by the second device 200 and is driven by the stored energy. However, the first device 300 is not limited thereto.

[0072] In this specification, the second device 200 may be a system of various types for supplying power in the form of current and / or voltage to the first device 300. For example, the second device 200 may be a device that generates and supplies power, or may be a device that supplies power generated by another device (e.g., an electric vehicle charging device). Of course, the second device 200 may be a device that supplies stored energy. However, the second device 200 is not limited thereto.

[0073] A power conversion device may be located on the first device 300 side. For example, first currents I11 and I12 may be generated on the large current paths 111 and 112 due to a switching operation of the power conversion device. Alternatively, for example, the first currents I11 and I12 may be generated by a noise current leaking from the first device 300 side flowing into the large current paths 111 and 112 via the second device 200 via the ground. The first currents I11 and I12 generated in the same direction on the large current paths 111 and 112 can be called common mode noise currents.

[0074] On the other hand, the common mode noise voltage V n may be a voltage generated between the ground (eg, reference potential 1) and the large current paths 111 and 112, instead of a voltage generated between the large current paths 111 and 112.

[0075] That is, the first device 300 side can correspond to a noise source, and the second device 200 side can correspond to a noise receiver.

[0076] The two or more high current paths 111, 112 may be paths that transmit the power supplied by the second device 200, i.e., the second currents I21, I22, to the first device 300, but may be, for example, power lines. For example, each of the two or more high current paths 111, 112 may be a live line and a neutral line. At least a part of the high current paths 111, 112 may pass through the active voltage compensation device 100. The second currents I21, I22 may be alternating currents having a frequency in a second frequency band. The second frequency band may be, for example, a band of 50 Hz to 60 Hz.

[0077] In addition, the two or more large current paths 111 and 112 may be paths through which noise generated from the first device 300, i.e., the first currents I11 and I12, are transmitted to the second device 200. Alternatively, the noise voltage V n may be a route through which

[0078] Noise voltage V n Alternatively, the first currents I11 and I12 may be input in a common mode to each of the two or more large current paths 111 and 112. The first currents I11 and I12 may be currents that are unintentionally generated in the first device 300 due to various causes. For example, the first currents I11 and I12 may be noise currents that are generated due to a virtual capacitance between the first device 300 and the surrounding environment. Alternatively, the first currents I11 and I12 may be noise currents that are generated due to a switching operation of a power conversion device of the first device 300. The noise voltage V n and the first currents I11 and I12 may have a frequency in a first frequency band. The first frequency band may be a frequency band higher than the above-mentioned second frequency band. The first frequency band may be, for example, a band having a range of 150 kHz to 30 MHz.

[0079] On the other hand, the two or more high current paths 111, 112 may include two paths, three paths (e.g., a three-phase three-wire power system), or four paths (e.g., a three-phase four-wire power system) as shown in Fig. 1. The number of high current paths 111, 112 may vary depending on the type and / or form of the power source used by the first device 300 and / or the second device 200.

[0080] The sensing unit 120 may detect the first currents I11 and I12 on the two or more high current paths 111 and 112 and generate output signals corresponding to the first currents I11 and I12. That is, the sensing unit 120 may mean a means for detecting the first currents I11 and I12 on the high current paths 111 and 112. At least a part of the high current paths 111 and 112 may pass through the sensing unit 120 for sensing the first currents I11 and I12, but a part of the sensing unit 120 where an output signal is generated by sensing may be insulated from the high current paths 111 and 112. In one embodiment, the sensing unit 120 may be realized by a sensing transformer. For example, the sensing unit 120 may be in a form in which an electric wire on the amplifier unit 130 side is wound around a CM choke around which a power line corresponding to the high current paths 111 and 112 is wound. The sensing transformer can detect the first currents I11 and I12 on the large current paths 111 and 112 while being insulated from the large current paths 111 and 112. However, the sensing unit 120 is not limited to the sensing transformer.

[0081] According to an embodiment, the sensing unit 120 may be differentially connected to an input terminal of the amplifier unit 130 .

[0082] The amplifier 130 is electrically connected to the sensing unit 120, and can amplify the output signal output from the sensing unit 120, and can generate an amplified output signal. In the present invention, "amplification" by the amplifier 130 can mean adjusting the magnitude and / or phase of the target to be amplified. The amplifier 130 can be realized by various means and may include active elements. In one embodiment, the amplifier 130 may include an OP-AMP. For example, the amplifier 130 may include a plurality of passive elements such as resistors and capacitors in addition to the OP-AMP. In addition, in one embodiment, the amplifier 130 may include a BJT (Bipolar Junction Transistor). For example, the amplifier 130 may include a plurality of passive elements such as resistors and capacitors in addition to the BJT. However, the present invention is not limited thereto, and the means for "amplification" described in the present invention can be used without limitation as the amplifier 130 of the present invention.

[0083] According to an embodiment, the second reference potential of the amplifier unit 130 may be distinguished from the first reference potential of the active voltage compensation apparatus 100. For example, when the amplifier unit 130 is insulated from the high current paths 111 and 112, the second reference potential of the amplifier unit 130 may be distinguished from the first reference potential of the active voltage compensation apparatus 100.

[0084] However, the present invention is not limited to this. For example, if the amplifier unit 130 is not insulated from the large current paths 111 and 112, the reference potential of the amplifier unit 130 and the reference potential of the active voltage compensation device 100 do not need to be distinguished.

[0085] The amplifier 130 may receive power from a third device 400 that is distinct from the first device 300 and / or the second device 200. The amplifier 130 may receive power from the third device 400 and amplify an output signal output from the sensing unit 120 to generate an amplified voltage. Here, the third device 400 may be a device that receives power from a power source independent of the first device 300 and the second device 200 and generates an input power source for the amplifier 130. Alternatively, the third device 400 may be a device that receives power from any one of the first device 300 and the second device 200 and generates an input power source for the amplifier 130.

[0086] The output signal (e.g., current or voltage) amplified by the amplifier unit 130 may be input to the compensation unit 160. Alternatively, the output signal amplified by the amplifier unit 130 may be converted into a feedback signal by the amplified signal feedback unit 150 and input to the input terminal of the amplifier unit 130 again.

[0087] The amplified signal feedback section 150 may have one end connected to the output end of the amplifying section 130 and the other end connected to the input end of the amplifying section 130 .

[0088] The amplified signal feedback unit 150 is electrically connected to the output terminal of the amplifier unit 130 and the input terminal of the amplifier unit 130, and can generate a feedback signal corresponding to the amplified signal generated by the amplifier unit 130, and input the generated feedback signal to the input terminal of the amplifier unit 130.

[0089] The amplified signal feedback section 150 can be realized by various means. In one embodiment, the amplified signal feedback section 150 may include a number of passive elements, such as resistors and capacitors.

[0090] The compensation unit 160 may generate a compensation voltage in series on the large current paths 111, 112 based on the amplified voltage output by the amplifier 130. The output side of the compensation unit 160 may generate a compensation voltage in series on the large current paths 111, 112, but may be insulated from the amplifier 130. For example, the compensation unit 160 may be composed of a compensation transformer for the insulation. An output signal (e.g., output voltage) of the amplifier 130 may be applied to the primary side of the compensation transformer, and a compensation voltage based on the output signal may be generated on the secondary side of the compensation transformer. The compensation voltage may have an effect of suppressing the first currents I11, I12 present on the large current paths 111, 112.

[0091] The compensation unit 160 may be of a feedforward type that compensates for noise input from the first device 300 side at a front stage on the power supply side. That is, in the active voltage compensation apparatus 100, the sensing unit 120 may be disposed on the first device 300 side, which is a noise source, and the compensation unit 160 may be disposed on the second device 200 side, which is a power supply side. However, the present invention is not limited thereto, and the active voltage compensation apparatus 100 may include a feedback type compensation unit that returns noise to a rear stage for compensation. In that case, in the active voltage compensation apparatus 100, the sensing unit 120 may be disposed on the second device 200 side, and the compensation unit 160 may be disposed on the first device 300 side.

[0092] 2 shows a more specific example of the embodiment shown in FIG. 1, and is a schematic diagram of an active voltage compensation device 100A according to an embodiment of the present invention. The active voltage compensation device 100A compensates for a noise voltage V input in common mode to each of two large current paths 111 and 112 connected to a first device 300. n can be actively compensated for.

[0093] Referring to FIG. 2, the active voltage compensation apparatus 100A may include a sensing unit 120, an amplifying unit 130A, an amplified signal feedback unit 150, and a compensating unit 160, and the amplifying unit 130A may include a first amplifying unit 131A and a second amplifying unit 132A.

[0094] The active voltage compensating apparatus 100A is different from the active voltage compensating apparatus 100 according to the embodiment described in Fig. 1 in that the amplifier unit 130A includes a first amplifier unit 131A and a second amplifier unit 132A. The active voltage compensating apparatus 100A will be described below focusing on the above-mentioned differences. The descriptions of the large current paths 111, 112, sensing unit 120, amplified signal feedback unit 150, compensation unit 160, reference potential 1, and reference potential 2 shown in relation to the active voltage compensating apparatus 100A in Fig. 2 correspond to those of Fig. 1.

[0095] The sensing unit 120 may sense the first currents I11 and I12 on the large current paths 111 and 112 to generate an output signal to the first amplifier unit 131A. The output signal may correspond to a voltage between nodes a and b. The nodes a and b may be differentially connected to the input terminals of the first amplifier unit 131A. Thus, the voltage between the nodes a and b may be input as an input voltage to the first amplifier unit 131A.

[0096] The first amplifier 131A can amplify the input voltage and output an output signal (e.g., an amplified voltage). In one embodiment, the first amplifier 131A may include an OP-AMP. For example, the first amplifier 131A may include a plurality of passive elements such as resistors and capacitors in addition to the OP-AMP.

[0097] An amplified voltage V1, which is an output signal of the first amplifier 131A, becomes an input signal of the compensation unit 160, and the compensation unit 160 can generate compensation voltages in series on the large current paths 111 and 112 based on V1.

[0098] On the other hand, the output signal of the first amplifier unit 131A becomes an input signal of the second amplifier unit 132A. The second amplifier unit 132A is electrically connected to the first amplifier unit 131A and can amplify the input signal of the second amplifier unit 132A to output an output signal (e.g., an amplified current). In one embodiment, the second amplifier unit 132A may include at least one BJT (Bipolar Junction Transistor). For example, the amplifier unit 130A may include a plurality of passive elements such as resistors and capacitors in addition to the BJT.

[0099] The amplified current I1, which is an output signal of the second amplifier 132A, is input to the compensation unit 160 and can serve to supply a current required for compensating for the noise voltage of the active voltage compensation apparatus 100. The second amplifier 132A can generate the amplified current I1 without substantially changing the amplified voltage V1, which is an output signal of the first amplifier 131A. By having the first amplifier 131A and the second amplifier 132A perform the voltage amplification and current amplification required for compensating for the noise voltage, respectively, the active voltage compensation apparatus 100 can operate more stably.

[0100] Although the first amplifier 131A and the second amplifier 132A are illustrated as being functionally distinct, according to one embodiment, the first amplifier 131A and the second amplifier 132A can be realized by one IC.

[0101] 3 shows a more specific example of the embodiment shown in FIG. 2, and is a schematic diagram of an active voltage compensation device 100B according to an embodiment of the present invention. The active voltage compensation device 100B compensates for a noise voltage V n can be actively compensated for.

[0102] Referring to FIG. 3, the active voltage compensation apparatus 100B may include a sensing transformer 120B, an amplifier section 130B, an amplified signal feedback section 150B and a compensation transformer 160B, and the amplifier section 130B may include a first amplifier section 131B and a second amplifier section 132B.

[0103] In one embodiment, the sensing unit 120 may include a sensing transformer 120B. Here, the sensing transformer 120B may sense a voltage induced across both ends of the sensing transformer 120B by the first currents I12, I12 or I11, I12 on the high current paths while being insulated from the high current paths 111, 112.

[0104] The sensing transformer 120B may include a primary side 121B disposed on the large current paths 111, 112, and a secondary side 122B differentially connected to an input terminal of the first amplifier 131B. The sensing transformer 120B may generate an induced current or an induced voltage in the secondary side 122B (e.g., secondary winding) based on a magnetic flux density induced by the first currents I11, I12 in the primary side 121B (e.g., primary winding) disposed on the large current paths 111, 112.

[0105] The primary side 121B of the sensing transformer 120B may be, for example, a winding in which the first large current path 111 and the second large current path 112 are wound around one core. However, the present invention is not limited thereto, and the primary side 121B of the sensing transformer 120B may be in a form in which the first large current path 111 and the second large current path 112 pass through the core.

[0106] According to an embodiment of the present invention, the sensing transformer 120B may be formed by overlapping and winding the wire of the secondary side 122B around the CM choke around which the first large current path 111 and the second large current path 112 are wound. When the sensing transformer 120B is formed using the CM choke in this manner, the sensing transformer 120B can function as a passive filter as a CM choke, in addition to performing only the functions of sensing and transforming. That is, when the sensing transformer 120B is formed by overlapping and winding the wire of the secondary side 122B around the CM choke, the sensing transformer 120B can simultaneously perform the functions of sensing and transforming the first currents I11 and I12 and suppressing or blocking the first currents I11 and I12. Meanwhile, by adding the active voltage compensation device according to various embodiments of the present invention to the above-mentioned CM choke, it is possible to effectively reduce the common mode noise voltage even in a high power system without increasing the size or number of the CM choke.

[0107] Specifically, the sensing transformer 120B may be configured such that the magnetic flux density induced by the first current I11 on the first large current path 111 (e.g., live line) and the magnetic flux density induced by the first current I12 on the second large current path 112 (e.g., neutral line) overlap (or reinforce) each other. Here, the large currents I21 and I22 also flow on the large current paths 111 and 112, but the magnetic flux density induced by the large current I21 on the first large current path 111 and the magnetic flux density induced by the large current I22 on the second large current path 112 may be configured to cancel each other out. Also, as an example, the sensing transformer 120B may be configured so that the magnitude of the magnetic flux density induced by the first currents I11, I12 in a first frequency band (e.g., a band having a range of 150 kHz to 30 MHz) is greater than the magnitude of the magnetic flux density induced by the large currents I21, I22 in a second frequency band (e.g., a band having a range of 50 Hz to 60 Hz).

[0108] In this way, the sensing transformer 120B is configured such that the magnetic flux densities induced by the large currents I21 and I22 cancel each other out, and only the first currents I11 and I12 corresponding to the common mode noise currents are detected. That is, the voltage induced on the secondary side 122B of the sensing transformer 120B may be a voltage obtained by converting the induced voltage on the primary side 121B by the first currents I11 and I12 at a predetermined ratio.

[0109] In one example, the primary side 121B and the secondary side 122B of the sensing transformer 120B are k sen may be coupled with a coupling coefficient of

[0110] For example, the voltage induced across the primary side 121B of the sensing transformer 120B by the first currents I11 and I12 is V choke Then, the voltage induced on the secondary side 122B is V sen is V choke N sen It is double.

[0111] Meanwhile, the secondary side of the sensing transformer 120B may be connected to the input terminal of the first amplifier unit 131B. For example, the secondary side 122B of the sensing transformer 120B may be differentially connected to the input terminal of the first amplifier unit 131B to provide an induced voltage to the first amplifier unit 131B.

[0112] The first amplifier 131B may be an example of the above-mentioned first amplifier 131. The first amplifier 131B amplifies the voltage V induced on the secondary side 122B, which is detected by the sensing transformer 120B. sen For example, the first amplifier 131B can amplify the induced voltage V sen The magnitude of the signal can be amplified by a predetermined factor and / or the phase can be adjusted.

[0113] JPEG2025500329000003.jpg11170 The output voltage V1 of the first amplifier 131B can indicate a potential with respect to the reference potential 2 of the first amplifier 131B.

[0114] The output voltage V1 of the first amplifier 131B becomes the input voltage of the compensation transformer 160B. That is, the output voltage V1 of the first amplifier 131B becomes the voltage of the primary side 161B of the compensation transformer 160B, and the compensation transformer 160B outputs a compensation voltage V in series on the large current paths 111 and 112, which are the secondary side 162B, based on V1. inj can be generated.

[0115] The second amplifier unit 132B may be an example of the aforementioned second amplifier unit 132. The second amplifier unit 132B can amplify the output current of the first amplifier unit 131B. For example, the second amplifier unit 132B can amplify the magnitude of the output current by a predetermined ratio and / or adjust the phase.

[0116] The output current of the second amplifier 132B becomes the input current of the compensation transformer 160B. That is, the output current of the second amplifier 132B becomes the current of the primary side 161B of the compensation transformer 160B, and the second amplifier 132B can be a means for amplifying the current to sufficiently supply the input current of the compensation transformer 160B. Meanwhile, the output voltage of the second amplifier 132B can have a value that is the same as or similar to the output voltage V1 of the first amplifier 131B. The output terminal of the second amplifier 132B is connected to the primary side 161B of the compensation transformer 160B, and the output voltage of the second amplifier 132B becomes the input voltage of the compensation transformer 160A.

[0117] The amplified signal feedback unit 150B may be one example of the above-mentioned amplified signal feedback unit 150. The amplified signal feedback unit 150B is connected between the output end of the second amplifying unit 132B and the input end of the first amplifying unit 131B, and can generate a feedback signal corresponding to the output signal (e.g., output voltage or output current) of the second amplifying unit 132B and transmit the feedback signal to the input end of the first amplifying unit 131B. The amplified signal feedback unit 150B may be a means for transmitting a feedback signal to the first amplifying unit 131B to achieve optimal noise voltage compensation according to the final output voltage or final output current of the amplifying units 131B and 132B.

[0118] The compensation transformer 160B may be an example of the compensation unit 160 described above. The compensation transformer 160B may be a means for isolating the amplifier units 131B and 132B including active elements from the large current paths 111 and 112. That is, the compensation transformer 160B applies a compensation voltage V to the large current paths 111 and 112 based on the output voltage V1 of the amplifier units 131B and 132B while being insulated from the large current paths 111 and 112. inj and may be a means for compensating the voltage.

[0119] The compensation transformer 160B may include a primary side 161B differentially connected to the output terminal of the second amplifier section 132B, and a secondary side 162B connected to the large current paths 111,112.

[0120] Compensation transformer 160B may have a structure in which an electric wire of primary side 161B and an electric wire of secondary side 162B pass through one core or are wound at least one turn around one core. The electric wire of primary side 161B is an electric wire through which an output signal of second amplifier 132B flows, and the electric wire of secondary side 162B may correspond to large current paths 111, 112.

[0121] The compensation transformer 160B generates a compensation voltage V on the large current paths 111 and 112, which are the secondary side 162B, based on the amplified voltage V1 generated on the primary side 161B. inj can be induced.

[0122] JPEG2025500329000004.jpg38170

[0123] In the active voltage compensating device 100B according to one embodiment, by using a reference potential (i.e., reference potential 2) for a component that generates a compensation voltage that is different from other components, the component that generates the compensation voltage can be operated in an isolated state, thereby improving the reliability of the active voltage compensating device 100B. However, the voltage compensating device according to the present invention is not limited to such an isolated structure.

[0124] On the other hand, the first device 300 detects a common mode noise voltage at a node connected to the primary side 121B of the sensing transformer 120B as V n and the voltage between the compensation transformer 160B and the second device 200 is V LISN And V n and V LISN Solving the circuit equation between V and V gives the following equation 1. n and V LISN can represent a potential relative to a reference potential 1 (e.g., ground).

number

[0125] The noise emitted to the second device 200 side by the operation of the active voltage compensation device 100B must be almost 0. Therefore, V LISN must be equal to 0, which leads to the following equation 2:

number

[0126] Using this, the effective impedance of the large current paths 111 and 112 at a point between the sensing transformer 120B and the compensation transformer 160B is calculated as shown in Equation 2.

number

[0127] JPEG2025500329000008.jpg22170

[0128] This is an effect of the active voltage compensation device 100B. The first amplifier unit 131B, the second amplifier unit 132B, the amplified signal feedback unit 150B, and the compensation transformer 160B of the active voltage compensation device 100B provide a voltage compensation (V inj ) can be performed, which has an effect equivalent to the effect of increasing the inductance, and can suppress the flow of noise current (L boost type).

[0129] JPEG2025500329000009.jpg21170

number

[0130] For example, the noise suppression effect can be obtained by adjusting the voltage gain G1 of the first amplifier 131B, the winding ratio N sen , the winding ratio N of the compensation transformer 160B inj is adjusted by

[0131] 4 and 5 are specific examples of the active voltage compensator 100B shown in FIG. 3, and each show an active voltage compensator 100C, 100C-1 according to an embodiment of the present invention.

[0132] The active voltage compensation device 100C according to one embodiment shown in FIG. 4 may include a sensing transformer 120C, an amplifier section 130C, an amplified signal feedback section 150C and a compensation transformer 160C, and the amplifier section 130C may include a first amplifier section 131C and a second amplifier section 132C.

[0133] The active voltage compensation device 100C-1 according to one embodiment shown in FIG. 5 may include a sensing transformer 120C, an amplifier section 130C, an amplified signal feedback section 150C and a compensation transformer 160C-1, and the amplifier section 130C may include a first amplifier section 131C and a second amplifier section 132C.

[0134] 4 and 5, the sensing transformer 120C is an example of the sensing transformer 120B described in FIG. 3, and the first amplifier section 131C, the second amplifier section 132C and the amplified signal feedback section 150C correspond to the descriptions of the sensing transformer 120B, the first amplifier section 131B, the second amplifier section 132B and the amplified signal feedback section 150B described in FIG. 3.

[0135] 4 and 5, the compensation transformer 160C, 160C-1 may have a structure in which a primary wire and a secondary wire pass through one core or are wound at least one time around one core. The primary wire may correspond to the output terminal of the second amplifier 132C. The secondary wire may correspond to the large current paths 111, 112.

[0136] The active voltage compensation device 100C of FIG. 4 shows an embodiment in which the wires on the primary side and the large current paths 111, 112 on the secondary side of the compensation transformer 160C pass through a core, and the winding ratio N inj can be about 1.

[0137] The active voltage compensation device 100C-1 of FIG. 5 shows an embodiment in which the wire on the primary side of the compensation transformer 160C-1 passes through a core, and the large current paths 111 and 112 on the secondary side are wound around the core once. inj may be about 2.

[0138] The compensation voltage induced on the secondary side of the compensation transformer 160C, 160C-1 is the output voltage of the second amplifier unit 132C multiplied by the winding ratio N inj It is possible to correspond to a value multiplied by

[0139] Meanwhile, referring again to FIGS. 4 and 5, in the active voltage compensation apparatus 100C, 100C-1 according to an embodiment of the present invention, the sensing transformer 120C may be a different type of element from the compensation transformer 160C, 160C-1.

[0140] For example, the sensing transformer 120C may be configured such that an electric wire on the input end side of the first amplifier unit 131C is overlapped and wound around a CM choke around which the power lines corresponding to the large current paths 111 and 112 are wound. The sensing transformer 120C can sense noise by simply overlapping and winding the secondary side electric wire around the CM choke.

[0141] When the sensing transformer 120C is formed using the CM choke in this way, unlike the compensation transformers 160C and 160C-1 which only function as a transformer, the sensing transformer 120C can suppress noise using inductance as a passive filter. That is, when the sensing transformer 120C is formed by overlapping and winding the secondary wire around the CM choke, the sensing transformer 120C can also function as a passive filter as a CM choke, in addition to only performing the functions of sensing and transforming. Here, the impedance on the active voltage compensation device side can be designed to be sufficiently larger than the impedance of the CM choke so that the existing function of the CM choke is not hindered.

[0142] 6 is a schematic diagram showing a system configuration including an active voltage compensation device 100D according to another embodiment of the present invention. Hereinafter, a description of the contents that overlap with the contents described with reference to FIG. 3 will be omitted.

[0143] 6, the active voltage compensation device 100D detects a noise voltage V− input in common mode to each of the large current paths 111D, 112D, and 113D connected to the first device 300D. n can be actively compensated for.

[0144] To this end, an active voltage compensation device 100D according to another embodiment of the present invention may include three high current paths 111D, 112D, 113D, a sensing transformer 120D, an amplifier section 130D, an amplified signal feedback section 150D and a compensation transformer 160D, and the amplifier section 130D may include a first amplifier section 131D and a second amplifier section 132D.

[0145] In comparison with the active voltage compensation apparatus 100B according to the embodiment described in Fig. 3, the active voltage compensation apparatus 100D according to the embodiment shown in Fig. 6 includes three large current paths 111D, 112D, and 113D, and thus differs in the sensing transformer 120D and the compensation transformer 160D. Therefore, the active voltage compensation apparatus 100D will be described below focusing on the above-mentioned differences.

[0146] The active voltage compensation device 100D may include a first large current path 111D, a second large current path 112D, and a third large current path 113D that are distinct from one another. According to an embodiment, the first large current path 111D may be an R-phase power line, the second large current path 112D may be an S-phase power line, and the third large current path 113D may be a T-phase power line. A noise voltage or a noise current may be input in a common mode to each of the first large current path 111D, the second large current path 112D, and the third large current path 113D.

[0147] The primary side 121D of the sensing transformer 120D is disposed in each of the first large current path 111D, the second large current path 112D, and the third large current path 113D, and an induced voltage V sen The magnetic flux densities generated in the sensing transformer 120D by the noise currents on the three large current paths 111D, 112D, and 113D reinforce each other.

[0148] Meanwhile, in the active voltage compensation device 100D, the first and second amplifier units 131D and 132D and the amplified signal feedback unit 150D correspond to the first and second amplifier units 131B and 132B and the amplified signal feedback unit 150B. For example, the wires of the secondary side 122D of the sensing transformer 120D may be differentially connected to the first amplifier unit 131D. The voltage V induced on the secondary side 122D of the sensing transformer 120D may be sen becomes an input voltage to the first amplifier 131D. The first amplifier 131D can output an amplified voltage V1 based on the input voltage. The second amplifier 132D can output an amplified current I1 while maintaining the amplified voltage V1.

[0149] Said V1 can be the input voltage of compensation transformer 160D, ie, the voltage of the primary side 161D of compensation transformer 160D.

[0150] Meanwhile, the secondary side 162D of the compensation transformer 160D may be disposed in each of the first large current path 111D, the second large current path 112D, and the third large current path 113D. The compensation transformer 160D may generate a compensation voltage V in series to each of the three large current paths 111D, 112D, and 113D that are the secondary side 162D, based on the voltage V1 of the primary side 161D output from the second amplifier unit 132D. inj can be generated.

[0151] The active voltage compensation device 100D according to this embodiment can perform voltage compensation against common-mode noise on the power lines of a three-phase, three-wire power system.

[0152] 7 is a schematic diagram showing a system configuration including an active voltage compensation device 100E according to still another embodiment of the present invention. Hereinafter, a description of the contents that overlap with the contents described with reference to FIG. 3 will be omitted.

[0153] 7, the active voltage compensation device 100E detects a noise voltage V ncan be actively compensated for.

[0154] To this end, the active compensation device 100E according to one embodiment of the present invention may include four high current paths 111E, 112E, 113E, 114E, a sensing transformer 120E, an amplifier section 130E, an amplified signal feedback section 150E and a compensation transformer 160E, and the amplifier section 130E may include a first amplifier section 131E and a second amplifier section 132E.

[0155] In comparison with the active compensation apparatus 100B according to the embodiment described in Fig. 3, the active compensation apparatus 100E according to the embodiment shown in Fig. 7 includes four large current paths 111E, 112E, 113E, and 114E, and thus differs in the sensing transformer 120E and the compensation transformer 160E. Therefore, the following description of the active voltage compensation apparatus 100E will focus on the above-mentioned differences.

[0156] The active voltage compensation device 100E may include a first large current path 111E, a second large current path 112E, a third large current path 113E, and a fourth large current path 114E that are distinct from one another. According to an embodiment, the first large current path 111E may be an R-phase power line, the second large current path 112E may be an S-phase power line, the third large current path 113E may be a T-phase power line, and the fourth large current path 114E may be an N-phase power line. A noise voltage or noise current may be input in a common mode to each of the first, second, third, and fourth large current paths 111E, 112E, 113E, and 114E.

[0157] The primary side 121E of the sensing transformer 120E is disposed in each of the first large current path 111E, the second large current path 112E, the third large current path 113E, and the fourth large current path 114E, and an induced voltage V sen The magnetic flux densities generated in the sensing transformer 120E by the noise currents on the four high current paths 111E, 112E, 113E, and 114E reinforce each other.

[0158] Meanwhile, in the active voltage compensation device 100E, the first and second amplifier units 131E and 132E and the amplified signal feedback unit 150E correspond to the first and second amplifier units 131B and 132B and the amplified signal feedback unit 150B. For example, the wires of the secondary side 122E of the sensing transformer 120E may be differentially connected to the first amplifier unit 131E. The voltage V induced on the secondary side 122E of the sensing transformer 120E may be sen becomes an input voltage to the first amplifier 131E. The first amplifier 131E outputs an amplified voltage V1 based on the input voltage, and the second amplifier 132E can output an amplified current I1 while maintaining the amplified voltage V1.

[0159] Said V1 can be the input voltage of compensation transformer 160E, ie, the voltage of the primary side 161E of compensation transformer 160E.

[0160] Meanwhile, the secondary side 162E of the compensation transformer 160E may be disposed on each of the first large current path 111E, the second large current path 112E, the third large current path 113E, and the fourth large current path 114E. The compensation transformer 160E may provide a compensation voltage V in series to each of the four large current paths 111E, 112E, 113E, and 114E that are the secondary side 162E, based on the voltage V1 of the primary side 161E output from the second amplifier 132E. inj can be generated.

[0161] The active voltage compensation device 100E according to this embodiment can perform voltage compensation against common-mode noise on the power lines of a three-phase four-wire power system.

[0162] Unlike the use of a CM choke alone, the active voltage compensation device according to various embodiments only incurs a small increase in size and cost when used for high power applications, and therefore has a significant advantage over passive filters in terms of cost, volume, and weight in high power systems.

[0163] In addition, the active voltage compensation apparatus according to various embodiments of the present invention has a structure that is electrically isolated from a large current path (e.g., power line), so that the elements included in the amplifier unit 130 can be protected from EOS (electrical overstress). For example, the amplifier unit 130 according to various embodiments of the present invention can use a low DC voltage (e.g., the third device 400, 48V or less) used in the control board because it is isolated from the power line. Therefore, the amplifier unit 130 does not require a separate power conversion circuit. In addition, the active voltage compensation apparatus according to various embodiments of the present invention can use elements with a low rated voltage to configure the amplifier unit 130, regardless of the reference potential of the power supply device (e.g., the second device 200).

[0164] Furthermore, the active voltage compensator according to various embodiments of the present invention can stably operate regardless of the electrical system to which it is attached. Therefore, the active voltage compensator does not need to be custom designed through repeated testing for each circuit or system, and can have versatility as an independent component. The active voltage compensator according to various embodiments can be commercialized as an independent module.

[0165] FIG. 8 shows a specific example of the amplifier 130 shown in FIG. 1, and shows an example of the functional configuration of an amplifier 130F according to still another embodiment of the present invention.

[0166] 8, in the active voltage compensation apparatus 100 according to various embodiments of the present invention, the amplifier unit 130F may include an integrated circuit unit 500F and a non-integrated circuit unit. Also, the first amplifier unit 131F according to the embodiment of the present invention may include a first integrated circuit unit 1311F and a first non-integrated circuit unit 1312F, and the second amplifier unit 132F may include a second integrated circuit unit 1321F and a second non-integrated circuit unit 1322F. The first integrated circuit unit 1311F and the second integrated circuit unit 1321F may constitute the integrated circuit unit 500F of the amplifier unit 130F.

[0167] The integrated circuit unit 500F may include essential components of the active voltage compensation device 100. The essential components may include, for example, active elements. Thus, the active elements included in the amplifier unit 130F can be integrated into the integrated circuit unit 500F of the amplifier unit 130F. The non-integrated circuit unit of the amplifier unit 130F may not include active elements. The integrated circuit unit 500F may include not only active elements but also passive elements.

[0168] The integrated circuit unit 500F according to the embodiment of the present invention may be a single physical integrated circuit (IC) chip. The integrated circuit unit 500F according to the embodiment of the present invention has versatility as an independent module and can be applied to active voltage compensation devices 100 with various designs.

[0169] The non-integrated circuit unit according to the embodiment of the present invention may be a part of the amplifier unit 130F that is not included in the integrated circuit unit 500F. The non-integrated circuit unit may be modified depending on the design of the active voltage compensation apparatus 100.

[0170] The integrated circuit unit 500F formed of one IC chip may include a terminal for connecting to a non-integrated circuit unit. The integrated circuit unit 500F and the non-integrated circuit unit may be combined together to function as the amplifier unit 130F. Referring to both FIG. 8 and FIG. 2, the combination of the integrated circuit unit 500F and the non-integrated circuit unit may function to generate an amplified signal from the output signal output from the sensing unit 120. The amplified signal may be input to the compensation unit 160. The integrated circuit unit 500F may further include a terminal for connecting to the third device 400 and a terminal for connecting to a second reference potential. An example of a detailed configuration of the amplifier unit 130F including the integrated circuit unit 500F and the non-integrated circuit unit will be described later with reference to FIG. 9 and FIG. 10.

[0171] FIG. 9 shows a specific example of an active voltage compensation device 100F including the amplifier unit 130F shown in FIG. 8, and FIG. 10 shows a specific example of the first integrated circuit unit 1311F of the first amplifier unit 131F shown in FIG. 9.

[0172] The active voltage compensation device 100F detects a voltage V n (For example, noise voltage) can be actively compensated for. Hereinafter, description of the contents that overlap with the contents described with reference to Figs. 1 to 8 will be omitted.

[0173] 9 and 10, an active voltage compensation apparatus 100F according to an embodiment of the present invention may include a sensing transformer 120F, an amplifier unit 130F, an amplified signal feedback unit 150F, and a compensation transformer 160F, and the amplifier unit 130F may include a first amplifier unit 131F and a second amplifier unit 132F. The sensing transformer 120F and the compensation transformer 160F correspond to the sensing transformer 120B and the compensation transformer 160B described in FIG.

[0174] The first amplifier unit 131F of the active voltage compensation device 100F according to an embodiment may include a first integrated circuit unit 1311F and a first non-integrated circuit unit. In the first amplifier unit 131F, the remaining components except for the first integrated circuit unit 1311F may be included in the first non-integrated circuit unit. For example, in the first amplifier unit 131F, the components included in the first non-integrated circuit unit may be, but are not limited to, discrete commercial devices.

[0175] The first non-integrated circuit unit may be implemented differently depending on the embodiment. The first non-integrated circuit unit may be modified to allow the first integrated circuit unit 1311F to be applied to active voltage compensation apparatus 100 of various designs.

[0176] In one embodiment, the first integrated circuit unit 1311F may include one or more transistors. In one embodiment, the transistors may be configured with MOSFETs. For example, the first amplifier unit 131F may have a differential amplifier structure including a differential pair of MOSFETs.

[0177] The first integrated circuit unit 1311F may be realized in a single-chip IC. According to one embodiment, one or more MOSFETs of the first integrated circuit unit 1311F may be integrated in a single IC chip. The first integrated circuit unit 1311F may be realized in a single-chip IC together with the second integrated circuit unit 1321F of the second amplifier unit 132F described below.

[0178] The first integrated circuit unit 1311F realized by an IC in a single chip has a terminal A corresponding to the gates of M1 and M5, a terminal B corresponding to the gates of M2 and M6, and 19 Terminal D1 corresponds to the source of M 20 and a terminal D2 corresponding to the drain of the first integrated circuit unit 1311F. However, the configuration of the first integrated circuit unit 1311F of the single IC chip is not limited thereto, and may further include other terminals in addition to the terminals A, B, D1, and D2. For example, the first integrated circuit unit 1311F may further include a terminal connected to an external power supply device (e.g., a third device) or a terminal corresponding to a reference potential.

[0179] The terminal A corresponding to the gates of M1 and M5 is connected to the secondary side of the sensing transformer 120F and can serve as the input terminal of the first amplifier 131F. The terminal B corresponding to the gates of M2 and M6 may be connected to the amplified signal feedback unit 150F. 19 Terminals D1 and M correspond to the sources of 20 A terminal D2 corresponding to the drain of the first amplifier 131F is connected to the second amplifier section and can function as the output terminal of the first amplifier section 131F.

[0180] In various embodiments, at least one of terminals A, B, D1, and D2 of the first integrated circuit portion 1311F may be connected to a non-integrated circuit portion. The first integrated circuit portion 1311F may be coupled together with the first non-integrated circuit portion to function as the first amplifier portion 131F according to one embodiment.

[0181] In this manner, the active voltage compensation device 100F according to one embodiment can minimize the size by configuring the first amplifier unit 131F as a single-chip integrated circuit (IC), and can provide optimal performance without using expensive discrete commercial components when configuring the first amplifier unit 131F.

[0182] Meanwhile, the second amplifier unit 132F of the active voltage compensation device 100F according to an embodiment may include a second integrated circuit unit 1321F and a second non-integrated circuit unit. In the second amplifier unit 132F, the remaining components except for the second integrated circuit unit 1321F may be included in the second non-integrated circuit unit. For example, in the second amplifier unit 132F, the components included in the second non-integrated circuit unit may be discrete commercial elements, but are not limited thereto. The second non-integrated circuit unit may be realized in different ways depending on the embodiment. The second non-integrated circuit unit may be modified so that the second integrated circuit unit 1321F can be applied to active voltage compensation devices 100 with various designs.

[0183] In one embodiment, the second integrated circuit portion 1321F may include a first transistor 11, a second transistor 12, a diode 13, and / or one or more resistors. In one embodiment, the first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT. For example, the second amplifier portion 132F may have a push-pull amplifier structure including an npn BJT and a pnp BJT.

[0184] For example, one or more resistors included in the second integrated circuit portion 1321F may be R npn , R pnp , and / or R e For example, a resistor R npn can connect the collector terminal and the base terminal of the first transistor 11, and the resistor R pnp can connect the collector terminal and the base terminal of the second transistor 12, and a resistor R e can connect the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12.

[0185] In one embodiment, the second integrated circuit unit 1321F of the second amplifier unit 132F may further include a diode 13 in addition to the first transistor 11, the second transistor 12, and one or more resistors. For example, one end of the diode 13 may be connected to a base terminal of the first transistor 11, and the other end of the diode 13 may be connected to a base terminal of the second transistor 12. In an optional embodiment, the diode 13 may be replaced with a resistor.

[0186] In one embodiment, the resistor R included in the second integrated circuit portion 1321F npn , R pnp , R e , and / or bias diode 13 can be used for DC biasing of the BJT. The above components are common configurations in various active voltage compensation devices and can be integrated into a one-chip integrated circuit part 500.

[0187] In the second amplifier unit 132F, the configuration other than the second integrated circuit unit 1321F may be included in a non-integrated circuit unit. The second integrated circuit unit 1321F may be physically realized in one IC chip. The second non-integrated circuit unit may be composed of discrete commercial elements. The non-integrated circuit unit may be realized differently depending on the embodiment.

[0188] In the embodiment shown in FIG. 9, the second non-integrated circuit component is, for example, a capacitor C b , C e and C dc The second amplifier 132F may include a capacitor C b , C e Capacitor C can selectively couple only alternating current (AC) signals. b , C e can block the DC voltage at the base and emitter nodes of the first and second transistors 11, 12.

[0189] In one embodiment, the third device 400 generates a direct current (DC) voltage V 1 referenced to a second reference potential to drive the amplifier unit 130F. dc The capacitor C dc is the voltage V dc , which may be connected in parallel between the third device 400 and the second reference potential. Capacitor C dc can selectively couple only AC signals between the collectors of a first transistor 11 (eg, an npn BJT) and a second transistor 12 (eg, a pnp BJT).

[0190] In the second integrated circuit portion 1321F, a resistor R npn , R pnp and R e can adjust the operating points of the first and second transistors 11 and 12 (e.g., BJTs). npn , R pnp and R e may be designed according to the operating point of the BJT. npn is the collector terminal of the first transistor 11 (e.g., npn BJT), and can connect the third device 400 terminal and the base terminal of the first transistor 11 (e.g., npn BJT). pnp is the collector terminal of the second transistor 12 (e.g., a pnp BJT), and can connect a second reference potential to the base terminal of the second transistor 12 (e.g., a pnp BJT). e can connect the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12.

[0191] An output side of the first amplifier 131F according to an embodiment may be connected to the base sides of the first and second transistors 11 and 12. A primary side 161F of the compensation transformer 160F according to an embodiment may be connected to the emitter sides of the first and second transistors 11 and 12. Here, the connection includes the case where the connection is indirect. The second amplifier 132F according to an embodiment may have a feedback structure that injects the output current again into the bases of the first and second transistors 11 and 12. The feedback structure allows the second amplifier 132F to stably obtain a predetermined current gain for the operation of the active voltage compensation device 100F.

[0192] When the input voltage of the second amplifier 132F due to the noise signal is a positive swing greater than 0, the first transistor 11 (e.g., npn BJT) can operate. At this time, the operating current can flow through a first path passing through the first transistor 11. When the input voltage of the second amplifier 132F due to the noise is a negative swing less than 0, the second transistor 12 (e.g., pnp BJT) can operate. At this time, the operating current can flow through a second path passing through the second transistor 12.

[0193] The second integrated circuit portion 1321F may be realized by an integrated circuit (IC) in a single chip. According to an embodiment, the first transistor 11, the second transistor 12, the diode 13, the R npn , R pnp , R e may be integrated on a single chip.

[0194] The single chip IC of the second integrated circuit unit 1321F may include a terminal b1 corresponding to the base of the first transistor 11, a terminal c1 corresponding to the collector of the first transistor 11, a terminal e1 corresponding to the emitter of the first transistor 11, a terminal b2 corresponding to the base of the second transistor 12, a terminal c1 corresponding to the collector of the second transistor 12, and a terminal e2 corresponding to the emitter of the second transistor 12. However, the present invention is not limited thereto, and the single IC chip of the integrated circuit unit 1321F may further include other terminals in addition to the terminals b1, b2, c1, c2, e1, and e2.

[0195] In various embodiments, at least one of terminals b1, b2, c1, c2, e1, and e2 of the second integrated circuit portion 1321F may be connected to a non-integrated circuit portion. The second integrated circuit portion 1321F and the second non-integrated circuit portion may be coupled together to function as a second amplifier portion 132F according to one embodiment.

[0196] According to the embodiment shown in FIG. 9, the base terminal b1 of the first transistor 11 and the base terminal b2 of the second transistor 12 are connected to a capacitor C b The emitter terminal e1 of the first transistor 11 and the emitter terminal e2 of the second transistor 12 may be connected to a capacitor C e may be connected. The third device 400 may be connected between the collector terminal c1 of the first transistor 11 and the collector terminal c2 of the second transistor 12. The collector terminal c2 of the second transistor 12 may correspond to a second reference potential. A decoupling capacitor C dc may be connected between the collector terminal c1 of the first transistor 11 and the collector terminal c2 of the second transistor 12.

[0197] The second integrated circuit part 1321F and the second non-integrated circuit part C b , C e , C dc can function as the second amplifier 132F according to the embodiment shown in FIG.

[0198] The active voltage compensation device 100F can minimize its size and significantly reduce its manufacturing costs by configuring the second amplifier section 132F as a single-chip integrated circuit.

[0199] 9 and 8, the first integrated circuit unit 1311F and the second integrated circuit unit 1321F may be realized as a single chip IC, constituting the integrated circuit unit 500F. The first integrated circuit unit 1311F, the second integrated circuit unit 1321F, the first non-integrated circuit unit 1312F, and the second non-integrated circuit unit 1322F may function together as the amplifier unit 130F.

[0200] According to various embodiments of the present invention, essential components of the active voltage compensation device 100F may be integrated into the single-chip integrated circuit unit 500F. Thus, by using the single-chip integrated circuit unit 500F, the size of the amplifier unit 130F can be minimized compared to the case where a discrete semiconductor device is used.

[0201] Non-integrated circuit parts include inductors and capacitors (e.g., C b , C e , C dc ), impedances, etc. The inductors, capacitors, and impedances of the non-integrated circuit portion may be discrete components and implemented on the periphery of the one-chip integrated circuit portion 500F.

[0202] For example, in the embodiment shown in FIG. e The capacitance required to couple an AC signal may be several μF or more (e.g., 10 μF). This capacitance value is difficult to realize in a single chip integrated circuit, so the capacitor C b , C e and C dc may be implemented external to the integrated circuit portion, i.e. in a non-integrated circuit portion.

[0203] Also, in order to achieve design flexibility for various power systems or various first devices 300, impedance may be realized outside the integrated circuit unit, i.e., in a non-integrated circuit unit. For example, the amplifier unit 130F may include an impedance consisting of at least one resistor and / or capacitor in the non-integrated circuit unit, and the impedance can be flexibly designed according to the winding ratio of the sensing transformer 120F and the compensation transformer 160F or according to the required target voltage gain. By adjusting the impedance of the non-integrated circuit unit, various voltage compensation devices can be designed that allow the same integrated circuit unit 500 to be applied to various power systems.

[0204] Meanwhile, the active voltage compensation apparatus 100F according to an embodiment may include an amplified signal feedback unit 150F. The amplified signal feedback unit 150F may have a feedback structure for injecting a feedback signal corresponding to the output voltage of the second amplifier unit 132F into the input terminal of the first amplifier unit 131F. By using the amplified signal feedback unit 150F, the active voltage compensation apparatus 100F may prevent a circuit oscillation phenomenon and stably maintain an appropriate gain for a noise compensation operation.

[0205] Circuit oscillation occurs when the loop gain of the closed circuit is 0 dB and the phase is −180 degrees. To avoid this circuit oscillation, the phase can be compensated by the amplified signal feedback unit 150F.

[0206] According to one embodiment, the amplified signal feedback section 150F may include one or more resistors and capacitors.

[0207] According to the embodiment shown in FIG. 9, the amplified signal feedback section 150F includes resistors R1, R2, R c and capacitor C c The amplified signal feedback unit 150F can adjust the position of the compensation frequency and the compensation value by adjusting the parameters of each resistor and capacitor.

[0208] In the amplified signal feedback section 150F, resistors R1, R2, R c and capacitor C c The frequency and phase determined by are as shown in Equation 5.

number

[0209] R1, R2, and R c , C c can be flexibly designed according to the winding ratio of the sensing transformer 120F and the compensation transformer 160F, or according to a required target voltage gain. In particular, the characteristics of the amplified signal feedback unit 150F must change according to the size of the sensing transformer 120F as well as the maximum rated voltage of the first device 300. Therefore, in order to make the ratio of the injection voltage to the sensing noise voltage uniform over a wide frequency range, it is necessary to appropriately design the amplified signal feedback unit 150F.

[0210] For example, in the embodiment shown in FIG. 9, R1, R2, and R c , C c By adjusting the ratio of the sensing transformer 120F and the winding ratio of the compensation transformer 160F, the injection voltage for the sensing noise voltage can be designed to be 1 in a wide frequency range. However, the amplified signal feedback unit 150F is not limited to the embodiment shown in Fig. 9, and can be designed differently depending on the size of the CM choke and surrounding elements for circuit stability.

[0211] On the other hand, when the integrated circuit unit 500F of the amplifier unit 130F is configured as a single chip IC, the amplified signal feedback unit 150F may be realized outside the integrated circuit unit 500F to achieve design flexibility. That is, by realizing the amplified signal feedback unit 150F outside the integrated circuit unit 500F, it is possible to ensure the design freedom of the active voltage compensation device 100F. By adjusting each element of the amplified signal feedback unit 150F, it is possible to design various voltage compensation devices that allow the same integrated circuit unit 500F to be applied to various power systems.

[0212] The integrated circuit portion 500F according to various embodiments of the present invention is designed for scalability so that it can be used in various types of active voltage compensation devices. The same type of integrated circuit portion 500F can be used in various embodiments, and the non-integrated circuit portion can be designed differently depending on the embodiment.

[0213] Thus, the active voltage compensation apparatus 100F according to various embodiments is characterized by being separated into an integrated circuit portion and a non-integrated circuit portion.

[0214] 11 is a schematic diagram showing the configuration of an active voltage compensation device 100F-1 according to another embodiment of the present invention. The active voltage compensation device 100F-1 is configured to compensate for a noise voltage V n In the following, the description that overlaps with the description made with reference to Figs. 1 to 10 will be omitted.

[0215] Referring to FIG. 11, the active voltage compensation device 100F-1 may include three high current paths 111, 112, 113, a sensing transformer 120F-1, an amplifier section 130F, an amplified signal feedback section 150F and a compensation transformer 160F-1, and the amplifier section 130F may include a first amplifier section 131F and a second amplifier section 132F.

[0216] In comparison with the active voltage compensator 100F according to the embodiment described above in Fig. 9, the active voltage compensator 100F-1 according to the embodiment shown in Fig. 11 includes three large current paths 111, 112, and 113, and therefore differs in the sensing transformer 120F-1 and the compensation transformer 160F-1. Therefore, the active voltage compensator 100F-1 will be described below, focusing on the above-mentioned differences.

[0217] The active voltage compensation device 100F-1 may include a first large current path 111, a second large current path 112, and a third large current path 113 that are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, and the third large current path 113 may be a T-phase power line. n The first currents I11, I12, and I13 may be input to the first large current path 111, the second large current path 112, and the third large current path 113, respectively, in a common mode.

[0218] The primary side 121F-1 of the sensing transformer 120F-1 is disposed in each of the first, second and third large current paths 111, 112 and 113, and can generate an induced voltage in the secondary side 122F-1. The magnetic flux densities generated in the sensing transformer 120F-1 by the first currents I11, I12 and I13 on the three large current paths 111, 112 and 113 reinforce each other.

[0219] On the other hand, in the active voltage compensation device 100F-1, the amplifier section 130F and the amplified signal feedback section 150F correspond to the amplifier section 130F and the amplified signal feedback section 150F described above with reference to FIG.

[0220] In one embodiment, the wires of the secondary side 122F-1 of the sensing transformer 120F-1 may be differentially connected to the first amplifier unit 131F-1. senbecomes an input voltage to the first amplifier 131F. The first amplifier 131F can output an amplified voltage V1 based on the input voltage. The second amplifier 132F can output an amplified current I1 while maintaining the amplified voltage V1. The V1 can be the input voltage of the compensation transformer 160F-1, that is, the voltage of the primary side 161F-1 of the compensation transformer 160F-1.

[0221] Meanwhile, the secondary side 162F-1 of the compensation transformer 160F-1 may be disposed on each of the first large current path 111, the second large current path 112, and the third large current path 113. The compensation transformer 160F-1 may generate a compensation voltage V in series to each of the three large current paths 111, 112, and 113 that are the secondary side 162F-1 based on the voltage V-1 of the primary side 161F-1 output from the second amplifier unit 132F-1. inj can be generated.

[0222] The active voltage compensation device 100F-1 according to this embodiment can perform voltage compensation for common-mode noise on the power lines of a three-phase, three-wire power system.

[0223] It goes without saying that the active voltage compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0224] The amplifier unit 130F according to an embodiment of the present invention can be applied to a single-phase (two-wire) system shown in Fig. 9 and a three-phase three-wire system shown in Fig. 10, and also to a three-phase four-wire system (not shown). Since the single-chip integrated circuit unit 500F can be applied to various systems, the integrated circuit unit 500F can have versatility in active voltage compensation devices according to various embodiments.

[0225] As described above, in various embodiments of the present invention, by using an amplifier unit that is divided into an integrated circuit unit and a non-integrated circuit unit, various types of active voltage compensation devices can be mass-produced through mass production of the integrated circuit unit. The integrated circuit unit can be generally and universally applied to devices including the active voltage compensation devices according to various embodiments. In addition, the single-chip integrated circuit unit can expand the functionality of the active voltage compensation device without additional components.

[0226] The active voltage compensation devices according to various embodiments have only a small increase in size and heat generation in high power systems compared to passive EMI filters, and the active voltage compensation devices according to various embodiments include single chip integrated circuit components, thereby minimizing size compared to discrete semiconductor devices.

[0227] The integrated circuit unit and the active voltage compensation device including the integrated circuit unit according to various embodiments can be used in various power electronic products regardless of the power rating. The integrated circuit unit and the active voltage compensation device including the integrated circuit unit according to various embodiments can be extended to high power and high-noise systems.

[0228] The integrated circuit portion according to various embodiments is sufficiently robust against voltage transients in the high current path in which the active voltage compensation device is installed.

[0229] FIG. 12 is a schematic diagram showing the configuration of a system including an active voltage compensation device 100G according to yet another embodiment of the present invention.

[0230] The active voltage compensation device 100G detects a voltage V n (For example, noise voltage) can be actively compensated for. In the following, description of the contents that overlap with the contents described with reference to Figs. 1 to 10 will be omitted.

[0231] Referring to FIG. 12, the active voltage compensation device may include a sensing unit 120G, an amplifying unit 130G, an amplified signal feedback unit 150G, a compensation unit 160G and a disturbance protection unit 600G, and the amplifying unit 130G may include a first amplifying unit 131G and a second amplifying unit 132G.

[0232] In comparison with the active voltage compensation apparatus 100A according to the embodiment described in Fig. 2, the active voltage compensation apparatus 100G according to the embodiment shown in Fig. 12 further includes a disturbance protection unit 600G connected to the input terminal or the output terminal of the first amplifying unit 131G and the second amplifying unit 132G. Therefore, the active voltage compensation apparatus 100G will be described below focusing on the above-mentioned differences.

[0233] The disturbance protection unit 600G can protect the first amplifying unit 131G or the second amplifying unit 132G from disturbance. For example, the active elements included in the first amplifying unit 131G and the second amplifying unit 132G can be protected by the disturbance protection unit 600G.

[0234] The active voltage compensating device 100G may be implemented in an electronic device, but generally, conditions under which an electric device operates may not be stable. That is, a disturbance signal such as an overvoltage or an overcurrent may enter the active voltage compensating device 100G from the outside via the large current paths 111 and 112. For example, a pulse voltage of several kV may be generated in at least one of the large current paths 111 and 112 due to a lightning strike or a lightning surge. The above-mentioned overvoltage / overcurrent may be transmitted to the first amplifying unit 131G or the second amplifying unit 132G via the sensing unit 120G, the compensating unit 160G, or the amplified signal feedback unit 150G. The first amplifying unit 131G or the second amplifying unit 132G may include various active elements and may be vulnerable to external disturbances, and may malfunction or break down due to the overvoltage / overcurrent.

[0235] The active voltage compensation apparatus 100 according to various embodiments of the present invention has a structure in which the first amplifier unit 131 or the second amplifier unit 132 is insulated from the large current paths 111, 112, and can therefore primarily protect the first amplifier unit 131 or the second amplifier unit 132 from the above-mentioned disturbances. The active voltage compensation apparatus 100 has an insulated structure, which can prevent the active elements from being directly exposed to a high voltage.

[0236] For more reliable protection against disturbances, the active voltage compensation device 100G may include a disturbance protection section 600G.

[0237] In one embodiment, when a voltage above a predetermined threshold voltage is applied to at least one of the input terminal of the first amplifier unit 131G to which the sensing unit 120G and the first amplifier unit 131G are connected, the output terminal of the second amplifier unit 132G to which the second amplifier unit 132G and the compensation unit 160G are connected, and the output terminal of the amplified signal feedback unit 150G to which the amplified signal feedback unit 150G and the first amplifier unit 131G are connected, the disturbance protection unit 600G can limit the applied voltage to a voltage below the threshold voltage.

[0238] For example, the disturbance protection unit 600G may include a first disturbance protection unit 601G for blocking an overvoltage transmitted to the first amplifier unit 131G via the sensing unit 120G, a second disturbance protection unit 602G for blocking an overvoltage transmitted to the second amplifier unit 132G via the compensation unit 160G, and a third disturbance protection unit 603G for blocking an overvoltage transmitted to the first amplifier unit 131G via the amplified signal feedback unit 150G.

[0239] The first disturbance protection unit 601G may be connected to the input end side of the first amplifier unit 131G. According to an embodiment, the first disturbance protection unit 601G may be connected in parallel to the output end of the sensing unit 120G.

[0240] The second disturbance protection unit 602G may be connected to an output terminal of the second amplifier unit 132G. The second disturbance protection unit 602G may be connected in parallel to an input terminal of the compensation unit 160G.

[0241] The third disturbance protection unit 603G may be connected to the output terminal of the amplified signal feedback unit 150G. The third disturbance protection unit 603G may be connected to a path that connects the output terminal of the amplified signal feedback unit 150G and the input terminal of the first amplifier unit 131G.

[0242] The first disturbance protection unit 601G, the second disturbance protection unit 602G, and the third disturbance protection unit 603G may be insulated from the large current paths 111 and 112.

[0243] According to an embodiment, the first disturbance protection unit 601G may have a first impedance when a voltage less than a predetermined threshold voltage is applied to the output terminal of the sensing unit 120G, and may have a second impedance lower than the first impedance when a voltage equal to or greater than the predetermined threshold voltage is applied to the output terminal of the sensing unit 120G. The first impedance may be a very large value, for example a value close to infinity.

[0244] Similarly, the second disturbance protection unit 602G may have a first impedance when a voltage less than a predetermined threshold voltage is applied to the output terminal of the second amplifier unit 132G, and may have a second impedance lower than the first impedance when a voltage equal to or greater than the predetermined threshold voltage is applied to the output terminal of the second amplifier unit 132G. Also, the third disturbance protection unit 603G may have a first impedance when a voltage less than a predetermined threshold voltage is applied to the output terminal of the amplified signal feedback unit 150G, and may have a second impedance lower than the first impedance when a voltage equal to or greater than the predetermined threshold voltage is applied to the output terminal of the amplified signal feedback unit 150G.

[0245] According to one embodiment, when the voltage applied to the disturbance protection unit 600G is less than a specified voltage, the disturbance protection unit 600G does not pass current through the disturbance protection unit 600G, but when an external overvoltage causes the voltage applied to the disturbance protection unit 600G to exceed the specified voltage, the disturbance protection unit 600G passes current (in parallel), thereby preventing the overvoltage from being transmitted to the first amplifier unit 131G or the second amplifier unit 132G and protecting the first amplifier unit 131G or the second amplifier unit 132G.

[0246] FIG. 13 is a specific example of the active voltage compensation apparatus 100G shown in FIG. 12, and diagrammatically illustrates an active voltage compensation apparatus 100H according to one embodiment of the present invention.

[0247] The active voltage compensation device 100H detects a voltage V n (For example, noise voltage) can be actively compensated for. In the following, description of the contents that overlap with the contents described with reference to Figs. 1 to 12 will be omitted.

[0248] 13, the active voltage compensation device 100H may include a sensing transformer 120H, an amplifier 130H, an amplified signal feedback unit 150H, a compensation transformer 160H, and a disturbance protection unit 600H. The amplifier 130H may include a first amplifier 131H and a second amplifier 132H, and the disturbance protection unit 600H may include a first disturbance protection element 601H, a second disturbance protection element 602H, and a third disturbance protection element 603H.

[0249] The sensing transformer 120H and the compensation transformer 160H correspond to the description of the sensing transformer 120B and the compensation transformer 160B described in Figure 3, and the first amplifier section 131H, the second amplifier section 132H, and the amplified signal feedback section 150H correspond to the description of the first amplifier section 131F, the second amplifier section 132F, and the amplified signal feedback section 150F described in Figure 9.

[0250] The first disturbance protection element 601H, the second disturbance protection element 602H, and the third disturbance protection element 603H may be one example of the first disturbance protection section 601G, the second disturbance protection section 602G, and the third disturbance protection section 603G described above.

[0251] The first disturbance protection element 601H, the second disturbance protection element 602H, and the third disturbance protection element 603H may include a TVS (Transient Voltage Suppression) diode element, but are not limited to this.

[0252] For example, an external overvoltage S such as a lightning surge may occur in at least one of the large current paths 111 and 112. For example, when an external overvoltage S occurs in the second large current path 112 as shown in FIG. 12, it is transferred in the form of magnetic energy to the first amplifier 131H or the second amplifier 132H via the first transfer path P1 or the second transfer path P2. The first transfer path P1 is a path via the sensing transformer 120H, and the second transfer path P2 is a path via the compensation transformer 160H. The active elements of the first amplifier 131H or the second amplifier 132H are vulnerable to external disturbances and therefore require a protection device.

[0253] The first disturbance protection element 601H may be connected in parallel to the secondary side 122H of the sensing transformer 120H to protect the first amplifier 131H from an overvoltage transmitted to the first transmission path P1. The second disturbance protection element 602H may be connected in parallel to the primary side 161H of the compensation transformer 160H to protect the second amplifier 132H from an overvoltage transmitted to the second transmission path P2. The third disturbance protection element 603H may be connected to the output end of the amplified signal feedback unit 150H to protect the first amplifier 131H from an overvoltage transmitted through the amplified signal feedback unit 150H. The first disturbance protection element 601H, the second disturbance protection element 602H, and the third disturbance protection element 603H may be insulated from the large current paths 111 and 112.

[0254] The first, second, and third disturbance protection elements 601H, 602H, and 603H may include, for example, TVS diode elements. Here, in order to minimize the performance degradation of the first amplifier unit 131H or the second amplifier unit 132H due to the TVS diode elements, a TVS diode element having a sufficiently low diode junction capacitance may be used. That is, the junction capacitance of the TVS diode for the first, second, and third disturbance protection elements 601H, 602H, and 603H may be equal to or less than a specified value. For example, the junction capacitance of the TVS diode may be equal to or less than several hundred pF. Also, even if the junction capacitance of the TVS diode for the first, second, and third disturbance protection elements 601H, 602H, and 603H is low, the durability thereof is guaranteed by the insulating structure.

[0255] The first, second, and third disturbance protection elements 601H, 602H, and 603H (e.g., TVS diodes) may have a breakdown voltage. For example, when the voltage applied to the first disturbance protection element 601H is less than the breakdown voltage, no current flows through the first disturbance protection element 601H. However, when a voltage equal to or greater than the breakdown voltage is applied across the first disturbance protection element 601H due to an external overvoltage S, the impedance of the first disturbance protection element 601H decreases, causing a current to flow through the first disturbance protection element 601H. The second disturbance protection element 602H and the third disturbance protection element 603H can also operate in the same manner as the first disturbance protection element 601H. Therefore, the active elements included in the first amplifier unit 131H or the second amplifier unit 132H can be protected from overvoltage.

[0256] When a voltage equal to or greater than a predetermined threshold voltage (e.g., breakdown voltage) is applied to at least one of the input terminal of the first amplifier unit 131H and the output terminal of the second amplifier unit 132H, the first, second, and third disturbance protection elements 601H, 602H, and 603H can consume at least a portion of the power due to the voltage equal to or greater than the predetermined threshold voltage. At least a remaining portion of the power due to the voltage equal to or greater than the predetermined threshold voltage can be consumed by the remaining elements (e.g., elements included in the first amplifier unit 131H, the second amplifier unit 132H, or the amplified signal feedback unit 150H).

[0257] 14 is a diagram illustrating a schematic configuration of an active voltage compensation device 100H-1 according to still another embodiment of the present invention. The active voltage compensation device 100H-1 compensates for a voltage V n (For example, noise voltage) can be actively compensated for. In the following, description of the contents that overlap with the contents described with reference to Figs. 1 to 13 will be omitted.

[0258] 14, the active voltage compensation device 100H-1 may include three large current paths 111, 112, 113, a sensing transformer 120H-1, an amplifier 130H, an amplified signal feedback unit 150H, a compensation transformer 160H-1, and a disturbance protection unit 600H, and the amplifier 130H may include a first amplifier 131H and a second amplifier 132H. The disturbance protection unit 600H may include a first disturbance protection element 601H, a second disturbance protection element 602H, and a third disturbance protection element 603H.

[0259] In comparison with the active voltage compensator 100H according to the embodiment described above in Fig. 13, the active voltage compensator 100H-1 according to the embodiment shown in Fig. 14 includes three large current paths 111, 112, and 113, and thus differs in the sensing transformer 120H-1 and the compensation transformer 160H-1. Therefore, the active voltage compensator 100H-1 will be described below, focusing on the above-mentioned differences.

[0260] The active voltage compensation device 100H-1 may include a first large current path 111, a second large current path 112, and a third large current path 113 that are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, and the third large current path 113 may be a T-phase power line. n The first currents I11, I12, and I13 may be input to the first large current path 111, the second large current path 112, and the third large current path 113, respectively, in a common mode.

[0261] The primary side 121H-1 of the sensing transformer 120H-1 is disposed in each of the first, second and third large current paths 111, 112 and 113, and can generate an induced voltage in the secondary side 122H-1. The magnetic flux densities generated in the sensing transformer 120H-1 by the first currents I11, I12 and I13 on the three large current paths 111, 112 and 113 reinforce each other.

[0262] On the other hand, in the active voltage compensation device 100H-1, the amplifier section 130H and the amplified signal feedback section 150H correspond to the amplifier section 130H and the amplified signal feedback section 150H described above with reference to FIG.

[0263] In one embodiment, the wires of the secondary side 122H-1 of the sensing transformer 120H-1 may be differentially connected to the first amplifier unit 131H-1. sen becomes an input voltage to the first amplifier 131H. The first amplifier 131H can output an amplified voltage V1 based on the input voltage. The second amplifier 132H can output an amplified current I1 while maintaining the amplified voltage V1.

[0264] The V1 can be the input voltage of the compensation transformer 160H-1, that is, the voltage of the primary side 161H-1 of the compensation transformer 160H-1.

[0265] On the other hand, the secondary side 162H-1 of the compensation transformer 160H-1 may be disposed on each of the first large current path 111, the second large current path 112, and the third large current path 113. The compensation transformer 160H-1 outputs a compensation voltage V in series to each of the three large current paths 111, 112, and 113 that are the secondary side 162H-1 based on the voltage V1 of the primary side 161H-1 output from the second amplifier unit 132H. inj can be generated.

[0266] The active voltage compensator 100H-1 according to this embodiment can perform voltage compensation against common-mode noise on the power lines of a three-phase three-wire power system, and can protect the amplifier unit 130H from external disturbances transmitted from the three large current paths 111, 112, 113 via the first path P1 or the second path P2.

[0267] It goes without saying that the active voltage compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0268] 15 is a schematic diagram showing a configuration of a system including an active voltage compensation device 100J according to still another embodiment of the present invention. The active voltage compensation device 100J compensates for a voltage V n (For example, noise voltage) can be actively compensated for. Below, description of the contents that overlap with the contents described with reference to Figs. 1 to 14 will be omitted.

[0269] Referring to FIG. 15, the active voltage compensation device 100J may include a sensing section 120, an amplifier section 130J, an amplified signal feedback section 150, a compensation section 160 and a power management section 180J, and the amplifier section 130J may include a first amplifier section 131J and a second amplifier section 132J.

[0270] In comparison with the active voltage compensator 100A according to the embodiment described in Fig. 2, the active voltage compensator 100J according to the embodiment shown in Fig. 15 further includes a power management unit 180J between the amplifier unit 130J and the third device 400. Therefore, the active voltage compensator 100J will be described below focusing on the above-mentioned differences.

[0271] The amplifier 130J according to an embodiment of the present invention may be supplied with power from a third device 400, which is a power device distinct from the first device 300 and / or the second device 200. The amplifier 130J may receive power from the third device 400 and amplify an output signal output from the sensing unit 120 to generate an amplified signal.

[0272] The third device 400 may be, for example, a device that receives power supply from one of the first device 300 and the second device 200 and generates input power for the amplifier unit 130J. The third device 400 may be, for example, a switching mode power supply (SMPS) of the first device 300 or the second device 200. The third device 400 may be, for example, a direct current (DC) voltage V I The output voltage V I can be used to drive the amplifier section 130J.

[0273] On the other hand, there may be cases where an optimized DC voltage level required for the amplifier unit 130J exists, but the third device 400 cannot output the optimized voltage level required for the amplifier unit 130J. I may vary depending on the system (e.g., the first device 300 or the second device 200). For example, the optimal supply voltage of the amplifier unit 130J is 12V, but the output voltage V of the third device 400 is I The output voltage V of the third device 400 may be 15V, 24V, 48V, etc. depending on the system. I If this is directly supplied to the amplifier 130J, the operation of the amplifier 130J may become unstable or may cause a breakdown.

[0274] Therefore, the active voltage compensation device 100J according to the embodiment of the present invention may include a power management unit 180J between the amplifier unit 130J and the third device 400. The power management unit 180J controls the voltage V I The output voltage V O The output voltage V of the power management unit 180J can be converted toO may be input to the amplifier 130J. I can vary from 15V, 24V, 48V, etc. depending on the system, but V O is a fixed value at the optimized voltage level required for amplifier section 130J.

[0275] The power management unit 180J may be a DC-DC converter or a power management IC (PMIC).

[0276] According to an embodiment of the present invention, at least a part of the amplifier unit 130J and at least a part of the power management unit 180J may be integrated into one integrated circuit (IC) chip. For example, by incorporating at least a part of the amplifier unit 130J and at least a part of the power management unit 180J into one IC chip, the IC chip can be commercially available as an independent component with versatility. The IC chip incorporating at least a part of the amplifier unit 130J and the power management unit 180J will be described later with reference to FIG. 16 and subsequent figures.

[0277] FIG. 16 shows an example of the functional configuration of the amplifier section 130J and the power management section 180J of the active voltage compensator 100J shown in FIG.

[0278] 16, the amplifier unit 130J may include an integrated circuit unit and a non-integrated circuit unit. The non-integrated circuit unit is a configuration other than the integrated circuit unit and is composed only of passive elements, and the integrated circuit unit includes active elements. The integrated circuit unit may further include passive elements in addition to active elements.

[0279] The first amplifier 131J and the second amplifier 132J constituting the amplifier 130J may each include an integrated circuit unit and a non-integrated circuit unit. That is, the first amplifier 131J may include a first integrated circuit unit 1311J and a first non-integrated circuit unit 1312J, and the second amplifier 132J may include a second integrated circuit unit 1321J and a second non-integrated circuit unit 1322J. An example of a detailed configuration of the amplifier 130J including an integrated circuit unit and a non-integrated circuit unit will be described later with reference to FIG. 17.

[0280] The amplifier 130J can receive power from the third device 400 by the power management unit 180J. O and amplifies the output signal output from the sensing unit 120 to generate an amplified signal. The amplified signal may be input to the compensation unit 160 or the amplified signal feedback unit 150.

[0281] The first integrated circuit unit 1311J and the second integrated circuit unit 1321J of the amplifier unit 130J may include active elements. The first integrated circuit unit 1311J and the second integrated circuit unit 1321J may be connected to a third device 400, which is a power supply device, in order to drive the active elements. The first integrated circuit unit 1311J and the second integrated circuit unit 1321J can receive power from the third device 400 by the power management unit 180J.

[0282] The power management unit 180J receives an arbitrary DC voltage V I with a uniform output of V O The third device 400, the power management unit 180J, and the amplifier unit 130J may all be connected to the second reference potential. Therefore, the input voltage V I and the output voltage V O are voltages relative to a second reference potential. The second reference potential may be distinguished from the first reference potential of the active voltage compensation device 100J.

[0283] The power management unit 180J may include a power conversion unit 181J, a power management feedback unit 182J, and a filter unit 183J. The power conversion unit 181J receives an arbitrary input voltage V I The output voltage V O The power management feedback unit 182J can convert any input voltage V I The same output voltage V O The filter unit 183J is a DC voltage / current filter. The filter unit 183J may be located at the input end or the output end of the power management unit 180J. An example of a detailed configuration of the power management unit 180J will be described later with reference to Figs. 18 and 19.

[0284] The power management unit 180J may include an active element. Here, the reference potential of the power management unit 180J may be the same as the second reference potential which is the reference potential of the amplifier unit 130J. The reference potential of the power management unit 180J may be different from the first reference potential which is the reference potential of the active voltage compensation device 100J.

[0285] According to one embodiment, the first integrated circuit unit 1311J, the second integrated circuit unit 1321J, and the power conversion unit 181J of the power management unit 180J may be physically integrated into one integrated circuit (IC) chip 500J. However, this is only one embodiment, and in other embodiments, at least some elements of the first integrated circuit unit 1311J, the second integrated circuit unit 1321J, the power conversion unit 181J, and the power management feedback unit 182J may be physically integrated into one IC chip 500J. It goes without saying that in still other embodiments, the entire amplifier unit 130J and the power management unit 180J may be physically integrated into one IC chip 500J.

[0286] The IC chip 500J can be connected to any input voltage (V I ) level, the first integrated circuit portion 1311J and the second integrated circuit portion 1321J are provided with an optimized voltage (V O) level to operate the integrated circuit unit of the amplifier unit 130J. Such an IC chip 500J can be commercially available as an independent component with versatility.

[0287] Fig. 17 shows a more specific example of the embodiment shown in Fig. 15, and generally illustrates an active voltage compensation device 100K according to an embodiment of the present invention. The active voltage compensation device 100K can actively compensate for noise voltages input in common mode to each of two large current paths 111 and 112 connected to the first device 300.

[0288] Referring to FIG. 17, the active voltage compensation device 100K may include a sensing transformer 120K, an amplifier section 130K, an amplified signal feedback section 150K, a compensation transformer 160K and a power management section 180K, and the amplifier section 130K may include a first amplifier section 131K and a second amplifier section 132K.

[0289] In one embodiment, the sensing transformer 120K and the compensation transformer 160K of the active voltage compensation apparatus 100K are examples of the sensing unit 120 and the compensation unit 160 of the active voltage compensation apparatus 100J shown in Fig. 15. The description of the sensing transformer 120K and the compensation transformer 160K corresponds to the description of the sensing transformer 120B and the compensation transformer 160B described in Fig. 3.

[0290] Moreover, the amplifier unit 130K and the amplified signal feedback unit 150K of the active voltage compensation device 100K are examples of the amplifier unit 130J and the amplified signal feedback unit 150 of the active voltage compensation device 100J shown in Figures 15 and 16. The explanation of the amplified signal feedback unit 150K corresponds to the explanation of the amplified signal feedback unit 150F described in Figure 9.

[0291] The amplifier unit 130K of the active voltage compensation device 100K according to an embodiment may include an integrated circuit unit and a non-integrated circuit unit. The non-integrated circuit unit is composed of only passive elements, and the integrated circuit unit includes active elements. The integrated circuit unit may include not only active elements, but also passive elements. In the amplifier unit 130K, the remaining configuration except for the integrated circuit unit may be included in the non-integrated circuit unit.

[0292] The first amplifier unit 131K and the second amplifier unit 132K of the amplifier unit 130K may each include an integrated circuit unit and a non-integrated circuit unit. The first amplifier unit 131K may include a first integrated circuit unit 1311K and a first non-integrated circuit unit 1312K, and the second amplifier unit 132K may include a second integrated circuit unit 1321K and a second non-integrated circuit unit 1322K.

[0293] In an embodiment of the present invention, the first integrated circuit unit 1311K and the second integrated circuit unit 1321K are physically implemented on one integrated circuit (IC) chip together with a power conversion unit 181K of the power management unit 180K described below. The components included in the first non-integrated circuit unit and the second non-integrated circuit unit may be, but are not limited to, discrete commercial devices. The non-integrated circuit unit of the amplifier unit 130K may be implemented differently depending on the embodiment. The non-integrated circuit unit may be modified so that the integrated circuit unit of the amplifier unit 130K can be applied to active voltage compensation devices 100 of various designs.

[0294] In one embodiment, the first integrated circuit unit 1311K may include one or more transistors. In one embodiment, the transistors may be configured with MOSFETs. For example, the first amplifier unit 131K may have a differential amplifier structure including a differential pair of MOSFETs.

[0295] In one embodiment, the second integrated circuit portion 1321K may include an npn BJT 11, a pnp BJT 12, a diode 13, and one or more resistors. In one embodiment, the one or more resistors included in the second integrated circuit portion 1321K may include R npn , R pnp, and / or R e In the second integrated circuit portion 1321K, a resistor R npn can be connected between the collector and base ends of npn BJT11, and resistor R pnp can be connected between the collector and base ends of the pnp BJT12, and the resistor R e can connect the emitter terminal of npn BJT11 to the emitter terminal of pnp BJT12.

[0296] In one embodiment, a biasing diode 13 may be connected between the base terminal of the npn BJT 11 and the base terminal of the pnp BJT 12 in the second integrated circuit part 1321K. That is, one end of the diode 13 may be connected to the base terminal of the npn BJT 11, and the other end of the diode 13 may be connected to the base terminal of the pnp BJT 12. A resistor R npn , R pnp , R e , and / or bias diode 13 can be used to DC bias the BJTs 11, 12. In one embodiment of the present invention, resistor R npn , R pnp , R e and bias diode 13, which is a common component in various active voltage compensation devices, can be integrated on an IC chip.

[0297] In various embodiments of the present invention, first integrated circuit portion 1311K and second integrated circuit portion 1321K may be implemented on a single IC chip together with power conversion portion 181K of power management portion 180K. According to one embodiment, one or more MOSFETs of first integrated circuit portion 1311K may be integrated on an IC chip, and npn BJT 11, pnp BJT 12, diode 13 and resistor R of second integrated circuit portion 1321K may be integrated on an IC chip. npn , R pnp , R e may be integrated on an IC chip.

[0298] The IC chip may include terminals serving as an input terminal, an output terminal, and a power supply terminal in the first integrated circuit unit 1311K. The IC chip may also include a terminal corresponding to the base of the npn BJT11, a terminal corresponding to the collector of the npn BJT11, a terminal corresponding to the emitter of the npn BJT11, a terminal corresponding to the base of the pnp BJT12, a terminal corresponding to the collector of the pnp BJT12, and a terminal corresponding to the emitter of the pnp BJT12 in the second integrated circuit unit 1321K. In addition, the IC chip may further include terminals of a power conversion unit 181K, which will be described later in FIG. 16.

[0299] In various embodiments, at least one of the terminals of the IC chip described above may be connected to a non-integrated circuit portion. The first integrated circuit portion 1311K may be coupled together with the first non-integrated circuit portion to function as a first amplifier portion 131K according to one embodiment. The second integrated circuit portion 1321K may be coupled together with the second non-integrated circuit portion to function as a second amplifier portion 132K according to one embodiment.

[0300] In one embodiment, the non-integrated circuit portion is a capacitor C b , C e , C dc According to one embodiment, the base terminal of the second integrated circuit unit 1321K may include a capacitor C b The emitter terminal of the second integrated circuit portion 1321K may be connected to a capacitor C e The collector terminal of the pnp BJT 12 may be connected to a second reference potential outside the IC chip. A capacitor C dc may be connected.

[0301] Capacitor C included in non-integrated circuitry b and C e Capacitor C can block DC voltage at the base and emitter nodes of BJTs 11 and 12. b and Ce can selectively couple only alternating current (AC) signals.

[0302] Capacitor C dc is the voltage V O The DC decoupling capacitor for the power management unit 180K output voltage V O The capacitor C dc can selectively couple only AC signals between the collectors of npn BJT11 and pnp BJT12. The first integrated circuit unit 1311K and the second integrated circuit unit 1321K and the non-integrated circuit unit C b , C e , C dc The combination of these functions as an amplifier unit 130K.

[0303] In one embodiment, the second amplifier unit 132K may have a push-pull amplifier structure including an npn BJT and a pnp BJT, and may have a recurrent structure in which an output current is injected again into the bases of the BJTs 11 and 12. The recurrent structure enables the second amplifier unit 132K to stably obtain a predetermined current gain for the operation of the active voltage compensation device 100K.

[0304] For example, when the input voltage of the noise signal amplifier 130K is a positive swing greater than 0, the npn BJT 11 can operate. At this time, the operating current can flow through a first path passing through the npn BJT 11. When the input voltage of the noise signal amplifier 130K is a negative swing less than 0, the pnp BJT 12 can operate. At this time, the operating current can flow through a second path passing through the pnp BJT 12.

[0305] In the second integrated circuit portion 1321K, a resistor R npn , R pnp and R e The resistor R can adjust the operating point of the BJT. npn , Rpnp and R e may be designed according to the operating point of the BJT.

[0306] Capacitor C b , C e and C dc The capacitance required to couple an AC signal may be several μF or more (e.g., 10 μF). This capacitance value is difficult to realize on an IC chip, so the capacitor C b , C e and C dc may be implemented externally to the IC chip.

[0307] On the other hand, the voltage gain of the amplifier 130K is determined by R1, R2, and R3 of the amplified signal feedback unit 150K. c , C c It can be controlled by R1, R2, R c , C c can be flexibly designed according to the required target voltage gain depending on the winding ratio of the sensing transformer 120K and the compensation transformer 160K. c , C c may be implemented external to the IC chip (i.e., with non-integrated integrated circuit parts rather than integrated into an integrated circuit part) to achieve design flexibility for different power systems or different first devices 300.

[0308] Inductors and capacitors in non-integrated circuits (e.g. C b , C e , C dc ) and R1, R2, R of the amplified signal feedback unit 150K c , C c are separate components and may be implemented on the periphery of the IC chip.

[0309] The integrated circuit unit of the amplifier unit 130K may be connected to a third device 400, which is a power supply device, in order to drive the active elements. That is, the first integrated circuit unit 1311K and the second integrated circuit unit 1321K may be driven by power supplied from the third device 400 via the power management unit 180K.

[0310] To this end, the output terminal of the power management unit 180K may be connected to the power supply terminal of the first integrated circuit unit 1311K, and the first amplifier unit 130K may be supplied with a DC voltage V O The negative power supply terminal V EE may correspond to a second reference potential, and the positive power supply terminal V CC is the output voltage V of the power management unit 180K based on the second reference potential. O It can respond to the following.

[0311] In addition, the output terminal of the power management unit 180K applies a DC voltage V between the collector terminal of the npn BJT11 and the collector terminal of the pnp BJT12 of the second integrated circuit unit 1321K. O The collector node of the pnp BJT 12 may correspond to a second reference potential, and the collector node of the npn BJT 11 may provide an output voltage V of the power management unit 180K referenced to the second reference potential. O It can respond to the following.

[0312] The power management unit 180K may include a filter unit 183K, a power management feedback unit 182K, and a power conversion unit 181K which is another component. According to an embodiment, the first integrated circuit unit 1311K and the second integrated circuit unit 1321K of the amplifier unit 130K and the power conversion unit 181K of the power management unit 180K may be physically incorporated in one integrated circuit (IC) chip. The IC chip can convert any input voltage level to a voltage level optimized for the first integrated circuit unit 1311K and the second integrated circuit unit 1321K to operate the integrated circuit unit of the amplifier unit 130K. Such an IC chip can be commercially available as an independent component with versatility.

[0313] Fig. 18 is a schematic diagram of a power management unit 180L according to an embodiment of the present invention. The power management unit 180L shown in Fig. 18 is a specific example of the power management units 180J and 180K described above in Fig. 15 to Fig. 17, and shows more specifically each component of the power management unit 180L.

[0314] Referring to FIG. 18, a power management unit 180L may include a power conversion unit 181L, a power management feedback unit 182L, and a filter unit 183L.

[0315] The power management unit 180L may be a power management IC (PMIC). In one embodiment, the power management unit 180L may be a step-down converter, such as a buck converter.

[0316] 18 and 17, the output DC voltage V of the third device 400 is I is the input terminal V of the power conversion unit 181L. IN Input is made via V I can vary from 15V, 24V, 48V, etc. depending on the system.

[0317] The power conversion unit 181L converts any input voltage V I The set output voltage V O It can be converted to V O The value of can be set to an optimized voltage level (eg, 12V) required for the first integrated circuit portion 1311K and / or the second integrated circuit portion 1321K.

[0318] The power conversion unit 181L may include a control circuit 20, a regulator 30, and a switch unit 40. The configuration of the power conversion unit 181L is incorporated into a single IC chip together with the first integrated circuit unit 1311K and the second integrated circuit unit 1321K.

[0319] Regulator 30 operates based on the input voltage V I For example, a DC low voltage for driving an internal circuit (e.g., the control circuit 20) can be generated from an input voltage V Imay have a high voltage range of 12V or more, but it is efficient for the internal circuit of the power conversion unit 181L to be driven at a low voltage of 5V level. Therefore, the regulator 30 is a circuit that supplies a low DC voltage (e.g., 5V) for the internal IC of the power conversion unit 181L. The regulator 30 may be called a linear regulator, a pre-regulator, an on-chip supply, an LDO (low dropout) regulator, etc.

[0320] The control circuit 20 is driven by receiving a supply of a DC low voltage generated by the regulator 30. The control circuit 20 includes a circuit required to output a constant output voltage in an arbitrary input voltage range. The control circuit 20 can generate a pulse width modulation (PWM) signal, which is a switching signal required to output a constant voltage in an arbitrary input voltage range. A detailed configuration of the control circuit 20 will be described later with reference to FIG. 19.

[0321] The switch unit 40 performs a switching operation in response to a switching signal (i.e., a PWM signal) input from the control circuit 20 to generate a constant output voltage V O The switch unit 40 may include a level shifter 45, a first driver 43, a second driver 44, a first switch 41, and a second switch 42. The first and second switches 41 and 42 may be MOSFETs. The first switch 41 may be a high side MOSFET, and the second switch 42 may be a low side MOSFET. Since the MOSFET has a large input capacitance at the gate end, the first and second drivers 43 and 44 having a sufficient output may be disposed in a stage preceding the MOSFET.

[0322] In various embodiments of the present invention, the control circuit 20, regulator 30 and switch section 40 are integrated into a single IC chip along with the integrated circuit section of the amplifier section 130K.

[0323] The power management feedback unit 182L is connected to the control circuit 20 and is disposed outside the IC chip. The power management feedback unit 182L receives an arbitrary input voltage V I The same output voltage V O The power management feedback unit 182L is a feedback control system that enables the output of a power supply voltage Vcc. The power management feedback unit 182L may be configured with discrete commercial elements. Thus, a compensation circuit required according to circumstances can be tuned outside the IC chip. However, the present invention is not limited thereto, and some elements (e.g., resistors) of the power management feedback unit 182L may be incorporated in the IC chip according to the embodiment.

[0324] The filter unit 183L may be a DC voltage / current filter and may be located at the output end of the power conversion unit 181L. However, the present invention is not limited thereto, and when the power management unit 180L is a boost converter, the filter unit may be located at the input end of the power conversion unit 181L. On the other hand, the filter unit 183L may be configured as a discrete commercial element outside the IC chip.

[0325] The power management unit 180L finally outputs V O The final output voltage V O is input to the integrated circuit unit of the amplifier unit 130K. O may be set to an optimum voltage level for driving the integrated circuit portion.

[0326] FIG. 19 shows a more specific example of the power conversion unit 181L shown in FIG.

[0327] 18 and 19, the control circuit 20 of the power conversion unit 181L may include a voltage redistribution circuit 21, a protection circuit 22, a pulse width modulation circuit 23, a zero current detector 24, and a soft start circuit 25. The regulator 30 in FIG. 19 corresponds to the regulator 30 in FIG.

[0328] Regulator 30 operates based on the input voltage V I From this, a low DC voltage for driving the internal circuitry of the power conversion unit 181L can be generated. The low DC voltage generated by the regulator 30 may be, for example, at a 5V level.

[0329] The voltage redistribution circuit 21 can receive an input of a DC low voltage generated by the regulator 30. The voltage redistribution circuit 21 redistributes the DC low voltage input from the regulator 30 to a DC bias voltage suitable for an internal circuit block of the IC. For example, the voltage redistribution circuit 21 can redistribute the DC bias voltage to a BGR (band gap reference) block, a ramp generator block, and the like. The voltage redistribution circuit 21 can be referred to as a master bias, or the like.

[0330] The protection circuit 22 may include one or more protection circuits for various situations. In one embodiment, the protection circuit 22 may include an under-voltage protection circuit (Under Voltage Lock Out, UVLO). The under-voltage protection circuit can forcibly turn off the operation of the power conversion unit 181L to shut down unstable operation when the output voltage of the regulator 30 drops below a specified voltage.

[0331] In one embodiment, the protection circuit 22 may include a short current protection (SCP) circuit. The short current protection circuit can protect the power conversion unit 181L from a short circuit current.

[0332] In one embodiment, the protection circuit 22 may include an overcurrent protection (OCP) circuit. The overcurrent protection circuit can protect the power conversion unit 181L from an overcurrent.

[0333] In one embodiment, the protection circuit 22 may include a thermal shutdown (TSD) circuit that can shut down the circuit for protection when the temperature of the IC exceeds a specified value due to, for example, an overcurrent.

[0334] The pulse width modulation circuit 23 performs the core function of the control circuit 20. The pulse width modulation circuit 23 generates a constant output voltage V O The first switch 41 and the second switch 42 are selectively turned on or off by the PWM signal generated by the pulse width modulation circuit 23, thereby outputting the voltage signal V SW The voltage signal outputted through one terminal SW of the IC chip is converted to an output DC voltage V through a filter unit 183L and a power management feedback unit 182L. O may be supplied to the integrated circuit unit of the amplifier unit.

[0335] According to one embodiment, the pulse width modulation circuit 23 may include a band gap reference (BGR) block, a ramp generator block, an error amplifier (EA), a comparator, and an RS latch.

[0336] In one embodiment, the band gap reference (BGR) block maintains a constant voltage V REF The BGR block is a voltage bias circuit that outputs a constant voltage V REF can be fed to an error amplifier EA.

[0337] The ramp generator block generates the ramp signal V RAMP and a clock signal CLK can be generated.

[0338] The error amplifier EA is an amplifier required for the feedback circuit. One of the input terminals of the error amplifier EA may be connected to the power management feedback unit 182L via one terminal FB of the IC chip. The power management feedback unit 182L outside the IC chip may be connected to the non-inverting terminal of the error amplifier EA via the terminal FB of the IC chip.

[0339] The comparator is connected to the output signal EA_OUT of the error amplifier EA and the ramp signal V RAMP and outputs a digital signal based on the comparison. Meanwhile, an output terminal of the error amplifier EA may form a terminal EAO of the IC chip. A power management feedback unit 182L outside the IC chip may be connected to the output end of the error amplifier EA via the terminal EAO. The terminal EAO may correspond to a non-inverting terminal of the input terminals of the comparator.

[0340] The RS latch can transmit a PWM signal to the switch section 40 based on the clock signal CLK.

[0341] The PWM signal can turn on the first switch 41 and the second switch 42 by an on or off digital signal. If the first switch 41 and the second switch 42 are turned on simultaneously even for a short time, the MOSFET may be damaged by an overcurrent. Therefore, in order to prevent the first and second switches 41 and 42 from being turned on simultaneously, the switch unit 40 may include a non-overlap circuit 46.

[0342] The PWM signal output from the RS latch may be transmitted to a non-overlap circuit 46 of the switch unit 40. The non-overlap circuit 46 may generate a very short time interval during which the first switch 41 and the second switch 42 are both off. The short time interval may be called a dead-time, and may be, for example, several tens of nanoseconds (nsec). The non-overlap circuit 46 may be called a dead-time generator.

[0343] On the other hand, the first and second switches 41 and 42 may be MOSFETs. The first switch 41 may be a high side MOSFET, and the second switch 42 may be a low side MOSFET. Since the input capacitance of the gate terminal of a MOSFET is large, the first and second drivers 43 and 44 having sufficient output may be disposed in front of the MOSFET.

[0344] On the other hand, the control circuit 20 may further include a zero current detector 24 .

[0345] If 0 A or a reverse current occurs in the second switch 42, which is the low-side MOSFET, the power management unit 180L must operate in discontinuous current mode (DCM) for efficiency. To this end, the zero current detector 24 can cut off the PWM signal input to the second switch 42 when a reverse current is detected in the second switch 42.

[0346] On the other hand, the control circuit 20 may further include a soft start circuit 25 .

[0347] When the power management unit 180L (i.e., the converter) is suddenly driven in the off state, a voltage is instantaneously applied to the output capacitor, etc., causing a transient current, which may cause a breakdown in the MOSFET, etc. To prevent this, the soft start circuit 25 can gradually increase the output voltage, etc., even in a situation where the converter is suddenly driven.

[0348] 20 is a schematic diagram showing the configuration of an active voltage compensation device 100K-1 according to still another embodiment of the present invention. In the following, a description that overlaps with the description made with reference to FIGS. 1 to 19 will be omitted.

[0349] 20, the active voltage compensation device 100K-1 can actively compensate for a noise voltage input in common mode to each of the large current paths 111, 112, and 113 connected to the first device 300.

[0350] To this end, the active voltage compensation device 100K-1 may include three high current paths 111, 112, 113, a sensing transformer 120K-1, an amplifier section 130K, an amplified signal feedback section 150K, a compensation transformer 160K-1 and a power management section 180K, and the amplifier section 130K may include a first amplifier section 131K and a second amplifier section 132K.

[0351] In comparison with the active voltage compensation apparatus 100K according to the embodiment described above (see FIG. 15), the active voltage compensation apparatus 100K-1 according to the embodiment shown in FIG. 20 includes three large current paths 111, 112, and 113, and thus differs in the primary side 121K-1 of the sensing transformer 120K-1 and the secondary side 162K-1 of the compensation transformer 160K-1. The active voltage compensation apparatus 100K-1 will be described below, focusing on the above-mentioned differences.

[0352] The active voltage compensation device 100K-1 may include a first large current path 111, a second large current path 112, and a third large current path 113 that are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, and the third large current path 113 may be a T-phase power line. n The first currents I11, I12, and I13 may be input to the first large current path 111, the second large current path 112, and the third large current path 113, respectively, in a common mode.

[0353] The primary side 121K-1 of the sensing transformer 120K-1 is disposed in each of the first, second and third large current paths 111, 112 and 113, and can generate an induced voltage in the secondary side 122K-1. The magnetic flux densities generated in the sensing transformer 120K-1 by the first currents I11, I12 and I13 on the three large current paths 111, 112 and 113 reinforce each other.

[0354] On the other hand, in the active voltage compensation device 100K-1, the amplifier section 130K and the amplified signal feedback section 150K correspond to the amplifier section 130K and the amplified signal feedback section 150K described above with reference to FIG.

[0355] In one embodiment, the wires of the secondary side 122K-1 of the sensing transformer 120K-1 may be differentially connected to the first amplifier unit 131K-1. sen becomes the input voltage of the first amplifier 131K. The first amplifier 131K can output an amplified voltage V1 based on the input voltage. The second amplifier 132K can output an amplified current I -1 can be output. The V1 can be the input voltage of the compensation transformer 160K-1, that is, the voltage of the primary side 161K-1 of the compensation transformer 160K-1.

[0356] Meanwhile, the secondary side 162K-1 of the compensation transformer 160K-1 may be disposed on each of the first large current path 111, the second large current path 112, and the third large current path 113. The compensation transformer 160K-1 outputs a compensation voltage V in series to each of the three large current paths 111, 112, and 113 that are the secondary side 162K-1 based on the voltage V1 of the primary side 161K-1 output from the second amplifier unit 132K. inj can be generated.

[0357] The active voltage compensation device 100K-1 according to this embodiment can perform voltage compensation against common-mode noise on the power lines of a three-phase, three-wire power system.

[0358] It goes without saying that the active voltage compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0359] In various embodiments of the present invention, the integrated circuit unit included in the amplifier unit and the power conversion unit included in the power management unit may be physically integrated into a single IC chip. I Even if the input is a voltage V, the power conversion section generates a voltage V optimized for driving the internal integrated circuit section. O and drives the integrated circuit section. Therefore, the IC chip can be commercially used as an independent component with versatility. Furthermore, the integrated circuit section included in the amplifier section can operate stably regardless of the characteristics of the surrounding system.

[0360] FIG. 21 is a schematic diagram showing the configuration of a system including an active voltage compensation device 100M according to yet another embodiment of the present invention.

[0361] The active voltage compensation device 100M detects a voltage V n (For example, noise voltage) can be actively compensated for. Below, description of the contents that overlap with the contents described with reference to Figs. 1 to 20 will be omitted.

[0362] Referring to FIG. 21, the active voltage compensation device 100M may include a sensing unit 120M, an amplifying unit 130M, an amplified signal feedback unit 150M, a compensation unit 160M and a malfunction detection unit 190M, and the amplifying unit 130M may include a first amplifying unit 131M and a second amplifying unit 132M.

[0363] In comparison with the active voltage compensator 100A according to the embodiment described in Fig. 2, the active voltage compensator 100M according to the embodiment shown in Fig. 21 further includes a malfunction detection unit 190M connected to the large current paths 111, 112, the sensing unit 120M, the first amplifying unit 131M, the second amplifying unit 132M, and the compensating unit 160M. Therefore, the active voltage compensator 100M will be described below, focusing on the above-mentioned differences.

[0364] According to an embodiment, the malfunction detection unit 190M may generate a signal corresponding to at least one of the operating states of the two or more large current paths 111, 112, the sensing unit 120M, the amplifying unit 130M, and the compensating unit 160M.

[0365] Specifically, the two or more high current paths 111, 112 may be electrically connected to the malfunction detection unit 190M. Here, the malfunction detection unit 190M can check the states of the two or more high current paths 111, 112 and generate a signal corresponding thereto. For example, the malfunction detection unit 190M can check the voltages of the two or more high current paths 111, 112 and / or the line voltages of the two or more high current paths 111, 112 and generate a signal indicating whether the high current paths 111, 112 are normal or not based on the voltages.

[0366] Meanwhile, the sensing unit 120M may be electrically connected to the malfunction detection unit 190M. The malfunction detection unit 190M may check the operating state of the sensing unit 120M and generate a signal corresponding thereto. For example, in an example in which the sensing unit 120M is realized by a sensing transformer, the malfunction detection unit 190M may check whether the primary side and the secondary side of the sensing transformer are insulated, and based on the result, may generate a signal indicating whether the sensing unit 120M is normal or not.

[0367] Meanwhile, the amplifier 130M may be electrically connected to the malfunction detector 190M. The malfunction detector 190M can check the operating state of the amplifier 130 and generate a signal corresponding thereto. A method in which the malfunction detector 190M checks whether or not there is an abnormality in the amplifier 130M will be described later.

[0368] Meanwhile, the compensation unit 160M may be electrically connected to the malfunction detection unit 190M. The malfunction detection unit 190M can check the operating state of the compensation unit 160M and generate a signal corresponding thereto. For example, in an example in which the compensation unit 160M is realized by a compensation transformer, the malfunction detection unit 190M can check whether the primary side and the secondary side of the compensation transformer are insulated, and based on that, generate a signal indicating whether the compensation unit 160M is normal or not.

[0369] As described above, the malfunction detection unit 190M can check the operating state of at least one of the two or more high current paths 111, 112, the sensing unit 120M, the amplification unit 130M, and the compensation unit 160M (hereinafter referred to as the confirmation target), and generate a signal corresponding to the confirmed operating state.

[0370] In one embodiment, the malfunction detection unit 190M may include a malfunction detection signal output unit that outputs a signal corresponding to the operational state of the object to be checked, and a malfunction detection signal display unit that displays the signal corresponding to the operational state.

[0371] The malfunction detection signal output unit may output a signal in the form of a voltage corresponding to the operating state of the object to be checked based on whether or not the voltage of at least one node inside the object to be checked is within a predetermined reference voltage range. The signal (i.e., voltage) output by the malfunction detection signal output unit may be output to an external device or to a malfunction detection signal display unit. Here, the external device may refer to various devices including the above-mentioned first device 300 and second device 200.

[0372] The malfunction detection signal display unit may include a light-emitting element that is turned on based on the signal generated by the malfunction detection signal output unit described above. Here, the light-emitting element may include, for example, a light-emitting diode.

[0373] In another embodiment, the malfunction detection signal display unit may include a light emitting element group including at least two or more light emitting elements. Here, the malfunction detection signal display unit may control the on / off of at least one or more light emitting elements of the light emitting element group based on the signal generated by the detection signal output unit. For example, the malfunction detection signal display unit may increase the number of light emitting elements that are turned on in proportion to the magnitude of the voltage generated by the malfunction detection signal output unit.

[0374] The light-emitting element as described above does not necessarily have to be located within the active voltage compensation device, but may be located in an external location electrically connected to the malfunction detection signal output section and suitable for user recognition.

[0375] As described above, the malfunction detection unit 190M can check the operating state of the check target based on at least one node voltage inside the check target, and can also check the operating state of the check target based on at least one path current inside the check target. Of course, the malfunction detection unit 190M can also check the operating state of the check target based on the temperature, temperature change, and magnetic field and / or electric field magnitude of the check target. However, this is merely an example, and the idea of ​​the present invention is not limited thereto.

[0376] The active voltage compensation device 100M configured as described above can detect voltages under specific conditions on two or more high current paths 111, 112 and actively compensate for them, and can be applied to high current, high voltage and / or high power systems despite the miniaturization of the device.

[0377] Meanwhile, the active voltage compensation apparatus 100M configured as above may be realized in the form of a module including a substrate sealed in one sealing structure. Also, each component of the active voltage compensation apparatus 100M and the first device 300, the second device 200, the third device 400, the first reference potential, the second reference potential, and terminals connected to other external devices may be provided in the form of pins protruding in a direction perpendicular to one surface of the substrate.

[0378] For example, a terminal for outputting a signal corresponding to the operating state generated by the malfunction detection unit 190M may be provided in the form of a pin protruding from the above-mentioned module, so that a user can easily check whether or not there is an abnormality in a specific configuration of the active voltage compensator 100M by checking the voltage of the corresponding pin without disassembling the module.

[0379] 22 shows a more specific example of the embodiment shown in FIG. 21, and is a schematic diagram of an active voltage compensation device 100N according to an embodiment of the present invention. The active voltage compensation device 100N is a device that compensates for a voltage V input in common mode to each of two or more large current paths 111 and 112 connected to a first device 300. n (e.g. noise voltage) can be actively compensated for.

[0380] The active voltage compensation device 100N may include a sensing unit 120N, an amplifying unit 130N, an amplified signal feedback unit 150N, a compensation unit 160N, and a malfunction detection unit 190N. The amplifying unit 130N may include a first amplifying unit 131N and a second amplifying unit 132N, and the malfunction detection unit 190N may include a first malfunction detection unit 191N, a second malfunction detection unit 192N, and a malfunction determination unit 193N.

[0381] The descriptions of the sensing section 120N, the first amplification section 131N, the second amplification section 132N, the amplified signal feedback section 150N and the compensation section 160N of the active voltage compensation device 100N correspond to the descriptions of the sensing section 120, the first amplification section 131A, the second amplification section 132A, the amplified signal feedback section 150 and the compensation section 160 in Figure 2.

[0382] The malfunction detection unit 190N is connected to the amplifier unit 130N to check the operating state of the amplifier unit 130N and generate a signal corresponding thereto, so that the malfunction detection unit 190N can detect a malfunction or failure of the amplifier unit 130N.

[0383] According to an embodiment, signals at two nodes included in the amplifier 130N may be differentially input to the malfunction detector 190N. The malfunction detector 190N can detect the differential signal between the two nodes included in the amplifier 130N. The malfunction detector 190N can detect a malfunction of the amplifier 130N by using the input differential signal. For example, the malfunction detector 190N can detect a malfunction of the amplifier 130N by determining whether or not the differential signal satisfies a predetermined condition.

[0384] The malfunction detection unit 190N can output a signal indicating the presence or absence of a malfunction in the amplifier unit 130N. To that end, the malfunction detection unit 190N may include a malfunction detection signal output unit and a malfunction detection signal display unit. The malfunction detection signal output unit outputs a signal corresponding to the operating state of the object to be confirmed, and the malfunction detection signal display unit can display the signal corresponding to the operating state. In another embodiment, the malfunction detection unit 190N may include only a malfunction detection signal output unit.

[0385] On the other hand, the malfunction detection section 190N may include a plurality of malfunction detection sections connected to each component of the amplifier section 130N in order to detect an abnormality in the amplifier section 130N. The following description will be given based on a configuration in which the active voltage compensator 100 includes two malfunction detection sections.

[0386] In one embodiment, the malfunction detection unit 190N may include a first malfunction detection unit 191N connected to the first amplifier unit 131N and a second malfunction detection unit 192N connected to the second amplifier unit 132N. The malfunction detection unit 190N may further include a malfunction determination unit 193N connected to both the first malfunction detection unit 191N and the second malfunction detection unit 192N.

[0387] The first malfunction detection unit 191N may be electrically connected to the first amplifier unit 131N. The first malfunction detection unit 191N may check the operating state of the first amplifier unit 131N and generate a signal corresponding to the checked operating state. To that end, the first malfunction detection unit 191N may include an output unit that generates a malfunction detection signal and / or a display unit that displays the signal.

[0388] The output section of the first malfunction detection section 191N can generate a signal corresponding to the operating state of the first amplification section 131N based on whether or not at least one node voltage inside the first amplification section 131N is included in a predetermined reference voltage range. For example, when the node voltage inside the first amplification section 131N is a value corresponding to half (e.g., 6 [V]) of the operating voltage of the first amplification section 131N (e.g., 12 [V]), that is, a value within a predetermined range from half the operating voltage of the first amplification section 131N (e.g., 4 to 8 [V]), the output section of the first malfunction detection section 191N can generate a signal indicating that the operating state of the first amplification section 131N is normal. Here, the range of the half value of the operating voltage of the first amplification section 131N can be appropriately determined according to the design of the active voltage compensation device 100N.

[0389] The signal generated by the output section of the first malfunction detection section 191N may be output to a display section of the first malfunction detection section 191N and / or a malfunction determination section 193N, which will be described later.

[0390] The display unit of the first malfunction detection unit 191N may include at least one light-emitting element for indicating whether the state of the first amplifier 131N is normal or abnormal. Here, the light-emitting element may include, for example, a light-emitting diode, and may indicate normality when lit and abnormality when unlit.

[0391] In another embodiment, the display unit of the first malfunction detection unit 191N may include a light emitting element group including at least two or more light emitting elements to more specifically display the node voltage inside the first amplification unit 131N. For example, the display unit of the first malfunction detection unit 191N may increase the number of light emitting elements that light up in proportion to the node voltage inside the first amplification unit 131N. The light emitting elements as described above do not necessarily have to be located inside the active voltage compensation device 100N, but may be located at an external position that is electrically connected to the output unit of the first malfunction detection unit 191N and is suitable for the user to recognize.

[0392] The second malfunction detection unit 192N may be electrically connected to the second amplifier unit 132N. The second malfunction detection unit 192N can check the operating state of the second amplifier unit 132N and generate a signal corresponding to the checked operating state. To that end, the second malfunction detection unit 192N may include an output unit that generates a malfunction detection signal and / or a display unit that displays the signal.

[0393] The output section of the second malfunction detection section 192N can generate a signal corresponding to the operating state of the second amplification section 132N based on whether or not at least one node voltage inside the second amplification section 132N is included in a predetermined reference voltage range. For example, when the node voltage inside the second amplification section 132N is a value corresponding to half (e.g., 6 [V]) of the operating voltage (e.g., 12 [V]) of the second amplification section 132N, that is, a value within a predetermined range from half the operating voltage of the second amplification section 132N (e.g., 4 to 8 [V]), the output section of the second malfunction detection section 192N can generate a signal indicating that the operating state of the second amplification section 132N is normal. Here, the range of the half value of the operating voltage of the second amplification section 132N can be appropriately determined according to the design of the active voltage compensation device 100N.

[0394] The signal generated by the output section of the second malfunction detection section 192N may be output to a display section of the second malfunction detection section 192N and / or a malfunction determination section 193N described later.

[0395] The display unit of the second malfunction detection unit 192N may include at least one light-emitting element for indicating whether the state of the second amplification unit 132N is normal or abnormal. Here, the light-emitting element may include, for example, a light-emitting diode, and may indicate normality when lit and abnormality when unlit.

[0396] In another embodiment, the display unit of the second malfunction detection unit 192N may include a light emitting element group including at least two or more light emitting elements to more specifically display the node voltage inside the second amplification unit 132N. For example, the display unit of the second malfunction detection unit 192N may increase the number of light emitting elements that light up in proportion to the node voltage inside the second amplification unit 132N. The light emitting elements as described above do not necessarily have to be located inside the active voltage compensation device 100N, but may be located at an external position that is electrically connected to the output unit of the second malfunction detection unit 192N and is suitable for the user to recognize.

[0397] The malfunction detection unit 190N may further include a malfunction determination unit 193N connected to the first malfunction detection unit 191N and the second malfunction detection unit 192N to determine a malfunction or failure of the entire amplifier unit 130N.

[0398] The malfunction determination unit 193N may be electrically connected to the first malfunction detection unit 191N and the second malfunction detection unit 192N. The malfunction determination unit 193N may receive signals output from the first malfunction detection unit 191N and the second malfunction detection unit 192N and generate a signal corresponding to the operating state of the amplifier unit 130N. To this end, the malfunction determination unit 193N may include an output unit that generates a malfunction detection signal, and may further include a display unit that displays the signal.

[0399] The output section of the malfunction determination section 193N can receive signals generated from the first malfunction detection section 191N and the second malfunction detection section 192N so as to correspond to the operating states of the first amplifier section 131N and the second amplifier section 132N, respectively, and generate a signal corresponding to the operating state of the amplifier section 130N. For example, the malfunction determination section 193N can receive signals corresponding to whether the states of the first amplifier section 131N and the second amplifier section 132N are normal or not from the first malfunction detection section 191N and the second malfunction detection section 192N, and can generate a signal indicating that the operating state of the amplifier section 130N is normal when both the states of the first amplifier section 131N and the second amplifier section 132N are normal. Alternatively, when at least one state of the first amplifier section 131N and the second amplifier section 132N is abnormal, the malfunction determination section 193N can generate a signal indicating that the operating state of the amplifier section 130N is abnormal.

[0400] The display unit of the malfunction determination unit 193N may include at least one light-emitting element for indicating whether the state of the amplifier unit 130N is normal or abnormal. Here, the light-emitting element may include, for example, a light-emitting diode, and may indicate normality when lit and abnormality when unlit. However, this is merely an example, and the idea of ​​the present invention is not limited thereto.

[0401] Fig. 23 shows an example of the functional configuration of an amplifier 130Q and a malfunction detection unit 190Q according to an embodiment of the present invention. The amplifier 130Q and the malfunction detection unit 190Q in Fig. 23 are a specific example of the amplifier 130N and the malfunction detection unit 190N shown in Fig. 22.

[0402] 23, the amplifier unit 130Q may include an integrated circuit unit and a non-integrated circuit unit. The non-integrated circuit unit is composed of only passive elements, and the integrated circuit unit includes active elements. In one embodiment, the integrated circuit unit may include not only active elements but also passive elements.

[0403] The first amplifier unit 131Q and the second amplifier unit 132Q constituting the amplifier unit 130Q may each include an integrated circuit unit and a non-integrated circuit unit. That is, the first amplifier unit 131Q may include a first integrated circuit unit 1311Q and a first non-integrated circuit unit 1312Q, and the second amplifier unit 132Q may include a second integrated circuit unit 1321Q and a second non-integrated circuit unit 1322Q.

[0404] 22 and 23, the combination of the integrated circuit part and the non-integrated circuit part of the amplifier unit 130Q may function to generate an amplified signal from the signal output from the sensing unit 120N. The amplified signal may be input to the compensation unit 160N.

[0405] The amplifier 130Q may be connected to a malfunction detector 190Q. The malfunction detector 190Q is connected to the amplifier 130Q and can detect a malfunction or failure of the amplifier 130Q.

[0406] The malfunction detection section 190Q may include a first malfunction detection section 191Q connected to the first amplifier section 131Q, a second malfunction detection section 192Q connected to the second amplifier section 132Q, and a malfunction determination section 193Q. Signals at two nodes included in the first amplifier section 131Q may be differentially input to the first malfunction detection section 191Q, and signals at two nodes included in the second amplifier section 132Q may be differentially input to the second malfunction detection section 192Q.

[0407] The first malfunction detection unit 191Q and the second malfunction detection unit 192Q can detect the differential signals of the two nodes input thereto. The two nodes included in the first amplifier unit 131Q may be two nodes included in the first integrated circuit unit 1311Q, and the two nodes included in the second amplifier unit 132Q may be two nodes included in the second integrated circuit unit 1321Q. The two nodes included in the first amplifier unit 131Q may also be connected to the first non-integrated circuit unit 1312Q, and the two nodes included in the second amplifier unit 132Q may also be connected to the second non-integrated circuit unit 1322Q.

[0408] The first malfunction detector 191Q and the second malfunction detector 192Q can generate output signals indicating whether the detected differential signals are within a predetermined range or not. The output signals may indicate whether the first amplifier 131Q and the second amplifier 132Q are malfunctioning or not.

[0409] The malfunction detection unit 190Q may further include a malfunction determination unit 193Q connected to the first malfunction detection unit 191Q and the second malfunction detection unit 192Q. The output signals of the first malfunction detection unit 191Q and the second malfunction detection unit 192Q may be input to the malfunction determination unit 193Q. The malfunction determination unit 193Q may generate and output a signal indicating the presence or absence of a malfunction or failure of the amplifier unit 130Q based on the input output signal. The signal output from the malfunction determination unit 193Q may indicate the presence or absence of a failure of the entire amplifier unit 130Q, or may indicate the presence or absence of a failure of each of the first amplifier unit 131Q and the second amplifier unit 132Q.

[0410] In one embodiment, the first integrated circuit unit 1311Q and the second integrated circuit unit 1321Q of the amplifier unit 130Q and the malfunction detection unit 190N may be physically integrated into one integrated circuit (IC) chip 500Q. However, this is merely one embodiment, and it goes without saying that in other embodiments, the integrated circuit unit and the non-integrated circuit unit of the amplifier unit 130Q and the malfunction detection unit 190N may be physically integrated into one IC chip 500Q.

[0411] The first malfunction detection unit 191Q, the second malfunction detection unit 192Q, and the malfunction determination unit 193Q may include active elements. Here, the reference potential of the first malfunction detection unit 191Q, the second malfunction detection unit 192Q, and the malfunction determination unit 193Q may be the same as the second reference potential which is the reference potential of the amplifier unit 130Q. The reference potential of the first malfunction detection unit 191Q and the second malfunction detection unit 192Q may be different from the first reference potential which is the reference potential of the active voltage compensation device 100.

[0412] 22 and 23, the amplifier 130Q and the malfunction detector 190Q may receive power from a third device 400 that is distinct from the first device 300 and / or the second device 200. The amplifier 130Q may receive power from the third device 400 and amplify an output signal output from the sensing unit 120N to generate an amplified signal. The malfunction detector 190Q may receive power from the third device 400 and generate an output signal indicating whether or not a differential signal input from the amplifier 130Q is within a predetermined range. The output signal may indicate whether or not the amplifier 130Q is malfunctioning.

[0413] The third device 400 may be a device that receives power supply from a power supply independent of the first device 300 and the second device 200 and generates input power supply for the amplifier 130Q and the malfunction detection unit 190Q. Alternatively, the third device 400 may be a device that receives power supply from one of the first device 300 and the second device 200 and generates input power supply for the amplifier 130Q and the malfunction detection unit 190Q.

[0414] The IC chip 500Q may include a terminal for connecting to a third device, a terminal for connecting to a second reference potential, and a terminal for outputting an output signal of the malfunction detection unit 190Q. The IC chip 500Q may further include other terminals.

[0415] As an example, in an embodiment in which only the first integrated circuit unit 1311Q and the second integrated circuit unit 1321Q of the amplifier unit 130Q are integrated into an IC chip 500Q together with the malfunction detection unit 190Q, the other terminal may be connected to a non-integrated circuit unit of the amplifier unit 130Q. As another example, in an embodiment in which the integrated circuit unit and the non-integrated circuit unit included in the amplifier unit 130Q and the malfunction detection unit 190Q are all integrated into a single IC chip 500Q, the other terminal may be connected to an output end of the sensing unit and an input end of the compensation unit.

[0416] Fig. 24 shows a more specific example of the embodiment shown in Fig. 22 and generally shows an active voltage compensation apparatus 100P according to one embodiment of the present invention, and Fig. 25 shows a specific example of the first integrated circuit unit 1311P and the first malfunction detection unit 191P of the first amplifier unit 131P shown in Fig. 24. The active voltage compensation apparatus 100P shown in Fig. 24 is an example of the active voltage compensation apparatus 100N shown in Fig. 22, and the amplifier unit 130P included in the active voltage compensation apparatus 100P is an example of the amplifier unit 130N of the active voltage compensation apparatus 100N.

[0417] The active voltage compensation device 100P detects a voltage V n (e.g. noise voltage) can be actively compensated for.

[0418] 24 and 25, the active voltage compensation apparatus 100P may include a sensing transformer 120P, an amplifier 130P, an amplified signal feedback unit 150P, a compensation transformer 160P, and a malfunction detection unit 190P, and the amplifier 130P may include a first amplifier 131P and a second amplifier 132P. The malfunction detection unit 190P may include a first malfunction detection unit 191P and a second malfunction detection unit 192P, and may further include a malfunction determination unit (not shown) connected to the first malfunction detection unit 191P and the second malfunction detection unit 192P.

[0419] When comparing the active voltage compensation apparatus 100P with the active voltage compensation apparatus 100F according to the embodiment described in Fig. 9, the active voltage compensation apparatus 100P according to the embodiment shown in Fig. 24 further includes a first malfunction detection unit 191P connected to the first amplifier unit 131P, and a second malfunction detection unit 192P connected to the second amplifier unit 132P. Therefore, the active voltage compensation apparatus 100P will be described below, focusing on the above-mentioned differences.

[0420] The amplifier unit 130P included in the active voltage compensation device 100P according to an embodiment may include an integrated circuit unit and a non-integrated circuit unit. In an embodiment in which the amplifier unit 130P includes a first amplifier unit 131P and a second amplifier unit 132P, the first amplifier unit 131P may include a first integrated circuit unit 1311P and a first non-integrated circuit unit 1312P, and the second amplifier unit 132P may include a second integrated circuit unit 1321P and a second non-integrated circuit unit 1322P. The first integrated circuit unit 1311P and the second integrated circuit unit 1321P may constitute the integrated circuit unit of the amplifier unit 130P. The non-integrated circuit unit of the amplifier unit 130P may be the remaining configuration except for the integrated circuit unit of the amplifier unit 130P. The non-integrated circuit unit may be modified according to the design of the active voltage compensation device 100P.

[0421] The amplifier 130P and a malfunction detector 190P, which will be described later, can receive power from a third device 400. The third device 400 supplies a direct current (DC) voltage V dd The amplifier 130P supplies the V dd C acts as a DC decoupling capacitor for dc The C may include dc is connected in parallel between the third device 400 and a second reference potential and is capable of selectively coupling only AC signals.

[0422] In one embodiment, the first integrated circuit unit 1311P of the first amplifier unit 131P may include one or more transistors. In one embodiment, the transistors may be configured with MOSFETs. For example, the first integrated circuit unit 1311P may have a differential amplifier structure including MOSFETs forming a differential pair. An example of a detailed configuration of the first integrated circuit unit 1311P corresponds to the description of the first integrated circuit unit 1311F described in FIG. 10.

[0423] The induced voltage induced on the secondary side 122P by the sensing transformer 120P may be differentially input to the first amplifier unit 131P. In one embodiment, the secondary side 122P of the sensing transformer 120P may be connected to the gates of two MOSFETs (e.g., M1 and M5) included in the first integrated circuit unit 1311P.

[0424] The first amplifier 131P may generate and output an amplified signal (e.g., an amplified voltage) based on a voltage input from the secondary side 122P of the sensing transformer 120P. In one embodiment, the source and drain sides of different MOSFETs (e.g., M19, M20) included in the first integrated circuit unit 1311P may together form an output unit of the first amplifier 131P, and the output unit may be connected to an input unit of the second amplifier 132P to transmit the amplified signal to the second amplifier 132P. Here, the connection may be indirectly connected.

[0425] In one embodiment, the amplified signal feedback unit 150P may be connected to the gates of two MOSFETs (M2, M6) included in the first integrated circuit unit 1311P. The amplifying unit 130P can transmit a feedback signal based on the output signal of the second amplifying unit 132P to the first amplifying unit 131P via the amplified signal feedback unit 150P.

[0426] The first amplifier unit 131P receives power from the third device 400, so that the nodes included in the first integrated circuit unit 1311P can swing widely in a common mode. For example, the voltages at the gate node, source node, and drain node of the MOSFET included in the first integrated circuit unit 1311P can swing in a common mode.

[0427] The first amplifier 131P can check whether the first amplifier 131P operates normally by checking whether the first integrated circuit unit 1311P of the first amplifier 131P operates normally. In other words, it can check whether the first amplifier 131P operates normally by checking whether the DC bias of the first amplifier 131P is normal.

[0428] As described above, since the voltage swings widely in common mode at the nodes of the first integrated circuit unit 1311P, it is possible to sense a malfunction of the first amplifier unit 131P by detecting only the differential DC voltage between two nodes included in the first integrated circuit unit 1311P. For example, as shown in Fig. 25, the first malfunction detector 191P may be connected to a node between M9 and M11 and a node between N11 and M15. The first malfunction detector 191P can determine that the state of the first amplifier unit 131P is normal when the differential DC voltage between the nodes satisfies a predetermined condition.

[0429] That is, the first malfunction detection unit 191P according to one embodiment can output a signal indicating a malfunction of the first amplification unit 131P, using a differential DC voltage between two nodes included in the first amplification unit 131P.

[0430] In an embodiment of the present invention, the first integrated circuit unit 1311P may be realized by an integrated circuit (IC) in a single chip. For example, one or more MOSFETs of the first integrated circuit unit 1311P may be integrated on a single chip. In one embodiment, the first integrated circuit unit 1311P may be integrated on a single chip together with the first malfunction detection unit 191P described below. In another embodiment, the first integrated circuit unit 1311P may be realized on a single IC chip together with the second integrated circuit unit 1321P described below and the entire malfunction detection unit 190P.

[0431] When the first integrated circuit unit 1311P and the first malfunction detection unit 191P are realized in one IC chip 501P, the IC chip 501P may include a terminal u1 for connecting to the third device 400, a terminal u2 for connecting to a second reference potential, a terminal u3 for outputting an output signal of the first malfunction detection unit 191P, a terminal u4 for connecting to the secondary side of the sensing transformer 120P, a terminal u5 for connecting to the amplified signal feedback unit 150P, and a terminal u6 for connecting to the second amplifier unit 132P. However, the present invention is not limited thereto, and the IC chip 501P may further include other terminals in addition to the terminals u1 to u6.

[0432] The amplified signal amplified by the first amplifier unit 131P may be input to the second amplifier unit 132P. The second amplifier unit 132P is supplied with power from the third device 400 and can amplify the amplified signal input from the first amplifier unit 131P again. The amplification in the second amplifier unit 132P may be such that only the current is amplified while the voltage of the amplified signal of the first amplifier unit 131P is maintained as is (or is not changed significantly). The second amplifier unit 132P enables the active voltage compensation device 100P to secure a sufficient current for driving the device.

[0433] In one embodiment, the second integrated circuit unit 1321P of the second amplifier unit 132P includes a first transistor 11, a second transistor 12, a diode 13, R npn , R pnp , R e The second non-integrated circuit portion 1322P may include b , C e may include:

[0434] In one embodiment, the first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT. For example, the second amplifier unit 132P may have a push-pull amplifier structure including an npn BJT and a pnp BJT.

[0435] The third device 400 that supplies power to the second amplifier 132P supplies a direct current (DC) voltage V dd The amplifier 130P supplies the V dd DC decoupling capacitor C dc C dc may be connected in parallel between the third device 400 and a second reference potential, and can selectively couple only alternating current (AC) signals between the collectors of the first transistor 11 (e.g., npn BJT) and the second transistor 12 (e.g., pnp BJT) in the second amplifier section 132P.

[0436] C included in the second amplifier 132P b and C e can selectively couple only alternating current (AC) signals.

[0437] In the second integrated circuit unit 1321P of the second amplifier unit 132P, R npn , R pnp and R e can adjust the operating points of the first and second transistors 11 and 12. npn is the collector terminal of the first transistor 11 (e.g., npn BJT), and can connect the third device 400 terminal and the base terminal of the first transistor 11 (e.g., npn BJT). R pnp is the collector terminal of the second transistor 12 (e.g., a pnp BJT), and can connect the second reference potential to the base terminal of the second transistor 12 (e.g., a pnp BJT). R e can connect the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12.

[0438] An output side of the first amplifying unit 131P according to an embodiment may be connected to the base sides of the first and second transistors 11 and 12. A primary side 161P of the compensation transformer 160P according to an embodiment may be connected to the emitter sides of the first and second transistors 11 and 12. An amplified signal feedback unit 150P according to an embodiment may be connected to the emitter sides of the first and second transistors 11 and 12. Here, the term "connected" includes a case where the connection is indirectly connected.

[0439] The second amplifier unit 132P according to an embodiment may have a recurrent structure that injects the output signal back into the bases of the first and second transistors 11 and 12. The recurrent structure allows the second amplifier unit 132P to stably obtain a predetermined current gain for the operation of the active voltage compensation device 100P.

[0440] When the input voltage of the second amplifier 132P due to the noise signal is a positive swing greater than 0, the first transistor 11 (e.g., npn BJT) can operate. At this time, the operating current can flow through a first path passing through the first transistor 11. When the input voltage of the second amplifier 132P due to the noise is a negative swing less than 0, the second transistor 12 (e.g., pnp BJT) can operate. At this time, the operating current can flow through a second path passing through the second transistor 12.

[0441] In various embodiments, it may be preferable to use a power supply with a higher possible voltage since there may be a large noise level that must be compensated for by the first device 300. For example, the third device 400 that provides the power may be independent of the first device 300 and the second device 200.

[0442] By receiving power supply from the third device 400, the nodes of the first transistor 11 and the second transistor 12 can swing widely in a common mode. For example, the voltages at the base nodes and the emitter nodes of the first and second transistors 11 and 12 can swing in a common mode.

[0443] It is possible to check whether the second amplifier unit 132P operates normally by checking whether the second integrated circuit unit 1321 of the second amplifier unit 132P operates normally. In other words, it is possible to check whether the second amplifier unit 132P operates normally by checking whether the DC bias of the second amplifier unit 132P is normal.

[0444] As described above, since the voltage swings widely in common mode at the nodes of the first and second transistors 11 and 12, it is possible to sense a malfunction of the second amplifier unit 132P by detecting only the differential DC voltage between the first transistor 11 and the second transistor 12. That is, in order to sense a malfunction of the second amplifier unit 132P, the second malfunction detector 192P may be connected to one node of the first transistor 11 and one node of the second transistor 12.

[0445] The second malfunction detection unit 192P can selectively detect only the differential DC voltage between the first transistor 11 and the second transistor 12. For example, a differential signal between one node of the first transistor 11 and one node of the second transistor 12 may be input to the second malfunction detection unit 192P. The differential signal may be a differential DC voltage between the emitter of the first transistor 11 and the emitter of the second transistor 12.

[0446] That is, the second malfunction detection unit 192P can output a signal indicating the state of the second amplifier unit 132P by using a differential DC voltage between two nodes included in the second amplifier unit 132P. The second malfunction detection unit 192P can determine that the second amplifier unit 132P is normal when a differential DC voltage between one node of the first transistor 11 and one node of the second transistor 12 satisfies a predetermined condition.

[0447] According to one embodiment, the second malfunction detection unit 192P can output a signal indicating that the state of the second amplifier unit 132P is normal when the differential DC voltage between the emitter of the first transistor 11 and the emitter of the second transistor 12 is within a predetermined range. The second malfunction detection unit 192P can output a signal indicating that the state of the second amplifier unit 132P is faulty when the differential DC voltage is outside the predetermined range.

[0448] In an embodiment of the present invention, at least a part of the second amplifier 132P and the second malfunction detector 192P may be physically integrated into one IC chip.

[0449] In one embodiment, the second integrated circuit unit 1321P of the second amplifier unit 132P and the second malfunction detector unit 192P may be integrated into one IC chip 502P. For example, the first transistor 11, the second transistor 12, the diode 13, the R npn , R pnp , R e and the second malfunction detection unit 192P may be integrated into one IC chip 502P.

[0450] In this case, the IC chip 502P may include a terminal t1 for connecting to the third device 400, a terminal t2 for connecting to a second reference potential, a terminal t3 for outputting an output signal of the second malfunction detection unit 192P, and terminals (e.g., t4, t5, t6, t7) for connecting to passive elements of the second non-integrated circuit unit 1322P.

[0451] For example, the terminals for connection to the second non-integrated circuit unit 1322P may include a terminal t4 corresponding to the emitter of the first transistor 11 and a terminal t5 corresponding to the emitter of the second transistor 12. In the embodiment shown in FIG. 24, the two terminals t4, t5 corresponding to the emitters of the first and second transistors 11, 12 may also correspond to the differential input of the second malfunction detection unit 192P. The terminals t4, t5 corresponding to the emitters of the first and second transistors 11, 12 may also correspond to the C e may be connected to

[0452] The terminals for connection to the second non-integrated circuit unit 1322P may include a terminal t6 corresponding to the base of the first transistor 11 and a terminal t7 corresponding to the base of the second transistor 12. The terminals t6 and t7 corresponding to the bases of the first and second transistors 11 and 12 are respectively connected to the C b may be connected to

[0453] However, the present invention is not limited thereto. In another embodiment, the IC chip 502P may further include at least a part of the second non-integrated circuit unit 1322P of the second amplifier unit 132P. In another embodiment, the IC chip 502P may include all of the second integrated circuit unit 1321P and the second non-integrated circuit unit 1322P of the second amplifier unit 132P, and the second malfunction detection unit 192P.

[0454] The malfunction detection section 190P may further include a malfunction determination section (not shown) connected to the first malfunction detection section 191P and the second malfunction detection section 192P. The description of the malfunction determination section corresponds to the description of the malfunction determination section 193Q in FIG.

[0455] The malfunction determination unit may include an active element. The malfunction determination unit may be realized by an IC in a single chip. The IC chip may include a terminal for connecting to the output signal terminal u3 of the first malfunction detection unit 191P and the output signal terminal t3 of the second malfunction detection unit 192P. The IC chip may also include a terminal for outputting the output signal of the malfunction determination unit 193P. The output signal may be a signal indicating the presence or absence of a malfunction of the amplifier unit 130P by determining the operating state of the amplifier unit 130P based on the output signal of the first malfunction detection unit 191P and the output signal of the second malfunction detection unit 192P.

[0456] The malfunction determination section may be realized on one IC chip together with the first integrated circuit section 1311P, the first malfunction detection section 191P, the second integrated circuit section 1321P, and the second malfunction detection section 192P.

[0457] In various embodiments of the present invention, by incorporating the malfunction detection unit 190P in the IC chip 500P in which the integrated circuit unit of the amplifier unit 130P is integrated, it is possible to reduce the size and cost compared to a case in which the malfunction detection unit 190P is separately configured using general commercially available elements. Furthermore, by integrating at least a part of the amplifier unit 130P and the malfunction detection unit 190P in one IC chip 500P, the IC chip 500P or the active voltage compensation device 100P can be commercially available as an independent component with versatility.

[0458] The malfunction detection section 190P will be described in detail later with reference to FIGS.

[0459] Fig. 26 shows a more specific example of the embodiment shown in Fig. 22, and generally illustrates an active voltage compensator 100P-1 according to one embodiment of the present invention. The active voltage compensator 100P-1 shown in Fig. 26 is an example of the active voltage compensator 100N shown in Fig. 22. The amplifier 130P-1 included in the active voltage compensator 100P-1 is an example of the amplifier 130N of the active voltage compensator 100N.

[0460] The amplifier 130P-1 shown in Fig. 26 corresponds to the amplifier 130P shown in Fig. 24, and may differ only in the position where the second malfunction detection unit 192P-1 is connected. Specifically, in an IC chip 502P-1 in which the second amplifier 132P-1 is integrated, a differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 may be input to the second malfunction detection unit 192P-1. Therefore, the explanation of the amplifier 130P-1 will be brief, since it corresponds to the explanation of the amplifier 130P.

[0461] In one embodiment, the non-integrated circuit portion of the second amplifier unit 132P-1 is C b , C e The integrated circuit portion of the second amplifier portion 132P-1 may include a first transistor 11, a second transistor 12, a diode 13, R npn , R pnp , R e In one embodiment, the first transistor 11 may be an npn BJT, and the second transistor 12 may be a pnp BJT. For example, the second amplifier unit 132P-1 may have a push-pull amplifier structure including an npn BJT and a pnp BJT. The second amplifier unit 132P-1 according to one embodiment may have a recurrent structure that injects an output current back into the bases of the first and second transistors 11 and 12.

[0462] When the input voltage of the second amplifier 132P-1 due to the noise signal is a positive swing greater than 0, the first transistor 11 (e.g., npn BJT) can operate. When the input voltage of the second amplifier 132P-1 due to the noise is a negative swing less than 0, the second transistor 12 (e.g., pnp BJT) can operate.

[0463] Since the second amplifier 132P-1 receives power from the third device 400, the voltages at the base and emitter nodes of the first and second transistors 11 and 12 can swing widely in common mode. Here, by checking whether the DC bias of the second amplifier 132P-1 is normal, it can be checked whether the second amplifier 132P-1 operates normally.

[0464] As described above, since the voltages at the base nodes and emitter nodes of the first and second transistors 11 and 12 swing widely in common mode, it is possible to sense a malfunction by detecting only the differential DC voltage between one node of the first transistor 11 and one node of the second transistor 12.

[0465] According to the embodiment shown in FIG. 26, a differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 may be input to the second malfunction detection unit 192P-1. If the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 is within a predetermined range, the second malfunction detection unit 192P-1 can output a signal indicating normality via the output terminal t3. If the differential DC voltage between the base of the first transistor 11 and the base of the second transistor 12 is outside the predetermined range, the second malfunction detection unit 192P-1 can output a signal indicating a failure via the output terminal t3.

[0466] In an embodiment of the present invention, at least a part of the second amplifier section 132P-1 and the second malfunction detector section 192P-1 may be physically integrated into one IC chip 502P-1.

[0467] In one embodiment, as shown in Fig. 26, the integrated circuit unit of the second amplifier unit 132P-1 and the second malfunction detector unit 192P-1 may be integrated into one IC chip 502P-1. For example, the first transistor 11, the second transistor 12, the diode 13, the R npn , R pnp , Re and the second malfunction detection unit 192P-1 may be integrated into one IC chip 502P-1.

[0468] In this case, the IC chip 502P-1 may include a terminal t1 for connecting to the third device 400, a terminal t2 for connecting to a second reference potential, a terminal t3 for outputting an output signal of the second malfunction detection section 192P-1, and terminals (e.g. t4, t5, t6, t7) for connecting to a non-integrated circuit section of the second amplifier section 132P-1. For example, the terminals for connecting to the non-integrated circuit section of the second amplifier section 132P-1 may include a terminal t4 corresponding to the emitter of the first transistor 11 and a terminal t5 corresponding to the emitter of the second transistor 12. The terminals t4 and t5 corresponding to the emitters are respectively C of the passive element section. e may be connected to

[0469] The terminals for connecting to the non-integrated circuit unit of the second amplifier unit 132P-1 may include a terminal t6 corresponding to the base of the first transistor 11 and a terminal t7 corresponding to the base of the second transistor 12. In the embodiment shown in FIG. 26, the two terminals t6 and t7 corresponding to the bases may also correspond to the differential input of the second malfunction detection unit 192P-1. The terminals t6 and t7 corresponding to the bases may respectively correspond to the C b may be connected to

[0470] However, the present invention is not limited thereto. In another embodiment, the IC chip 502P-1 may further include at least a portion of the non-integrated circuit portion of the second amplifier unit 132P-1. In another embodiment, the IC chip 502P-1 may include all of the integrated circuit portion and non-integrated circuit portion of the second amplifier unit 132P-1 and the second malfunction detection unit 192P-1.

[0471] In one embodiment, at least a portion of the first amplifier unit 131P and the first malfunction detection unit 191P may be integrated into one IC chip 501P, and at least a portion of the second amplifier unit 132P and the second malfunction detection unit 192P-1 may be integrated into one IC chip 502P-1, and the IC chips 501P and 502P-1 may be configured as the same IC chip 500P-1.

[0472] FIG. 27 shows a functional configuration of a malfunction detection section 190P according to an embodiment of the present invention, and FIG. 28 is a schematic diagram of a logic circuit 197 according to an embodiment of the present invention.

[0473] 27 and 28, the malfunction detection unit 190P may include a subtractor 194, a first comparator 195a, a second comparator 195b, a first level shifter 196a, a second level shifter 196b, and a logic circuit 197. In an embodiment in which the malfunction detection unit 190P includes the first malfunction detection unit 191P and the second malfunction detection unit 192P, the first malfunction detection unit 191P and the second malfunction detection unit 192P may include the subtractor 194, the first comparator 195a, the second comparator 195b, the first level shifter 196a, the second level shifter 196b, and a logic circuit 197, respectively. However, this is merely an embodiment, and the malfunction detection unit 190P of the present invention is not limited thereto.

[0474] The second malfunction detection unit 192P connected to the second amplifier 132P will be described in detail below with reference to Fig. 27 and Fig. 28 together with Fig. 24. The description of the second malfunction detection unit 192P is also applicable to the malfunction detection unit 190P and the first malfunction detection unit 191P.

[0475] The second malfunction detection unit 192P can be applied to the IC chips 500Q, 500P, and 500P-1 according to the various embodiments described above.

[0476] In various embodiments, signals at two nodes included in the second amplifier unit 132P may be differentially input to the subtractor 194 of the second malfunction detection unit 192P. As described above, a signal at one node of the first transistor 11 and a signal at one node of the second transistor 12 may be differentially input to the subtractor 194.

[0477] The subtractor 194 can selectively sense only the differential DC voltage between the node of the first transistor 11 and the node of the second transistor 12. Since the subtractor 194 senses the voltages at the two nodes differentially, it can ignore the common mode swing of the two nodes. The subtractor 194 subtracts the sensed differential DC voltage V sub can be output.

[0478] In one embodiment, the subtractor 194 calculates the differential DC voltage V between the emitter of the first transistor 11 and the emitter of the second transistor 12. sub In this case, the input terminal of the subtractor 194 may share a node with the emitters of the first and second transistors 11 and 12.

[0479] In another embodiment, the subtractor 194 calculates the differential DC voltage V between the base of the first transistor 11 and the base of the second transistor 12. sub In this case, the input terminal of the subtractor 194 may share a node with the bases of the first and second transistors 11 and 12.

[0480] On the other hand, the voltage at each input terminal of the subtractor 194 can swing, and the swing is equal to or smaller than the rated voltage V dd Therefore, the subtractor 194 may be set to a value corresponding to the rated voltage V dd Thus, the subtractor 194 may have a rated voltage corresponding to the supply voltage V dd may be supplied as is to drive the inverter 10.

[0481] Since the second malfunction detection unit 192P must not affect the operation of the second amplification unit 132P, the subtractor 194 of the second malfunction detection unit 192P may have a high input impedance. For example, the subtractor 194 may be configured with a circuit having an input impedance higher than 10 kOhm.

[0482] According to one embodiment, the subtractor 194 may include a rail-to-rail Op-amp.

[0483] The first and second comparators 195a and 195b receive the differential DC voltage V sub It is possible to detect whether the magnitude of the differential DC voltage V is within a predetermined range. sub If the magnitude of the differential DC voltage V is within the predetermined range, it can be determined that the second amplifier 132P is normal. sub If the magnitude of the differential DC voltage V is outside the predetermined range, it can be determined that the second amplifier unit 132P is faulty. sub is the maximum reference voltage V ref,max and the minimum reference voltage V ref,min If the differential DC voltage V is between 0 and 1, the second amplifier 132P may be normal. sub is the maximum reference voltage V ref,max Higher or minimum reference voltage V ref,min If it is lower, the second amplifier unit 132P may be faulty.

[0484] Maximum reference voltage V ref,max and the minimum reference voltage V ref,min can be preset in various embodiments. Hereinafter, the maximum reference voltage V ref,max and the minimum reference voltage V ref,min This section explains the criteria for setting the above.

[0485] In one embodiment, the subtractor 194 calculates the differential DC voltage V between the emitter of the first transistor 11 and the emitter of the second transistor 12. sub When the second amplifier 132P operates normally, the differential DC voltage V sub Ie *R e It can be used to respond to R e is a resistor connecting the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12, and I e is R e The current flowing through I e and R e can be determined by design. In this embodiment, the maximum reference voltage V ref,max I e *R e The minimum reference voltage V ref,min I e *R e It may be set lower by a specified amount.

[0486] In another embodiment, the subtractor 194 calculates the differential DC voltage V between the base of the first transistor 11 and the base of the second transistor 12. sub When the second amplifier 132P operates normally, the differential DC voltage V sub (I e *R e +2V be,bjt ) can be handled. R e is a resistor connecting the emitter terminal of the first transistor 11 and the emitter terminal of the second transistor 12, and I e is R e The current flowing through I e and R e can be determined by design. be,bjt indicates the voltage between the base and the emitter of the first transistor 11 or the second transistor 12. In this embodiment, the maximum reference voltage V ref,max (I e *R e +2V be,bjt ) by a specified amount. ref,min (I e *R e +2V be,bjt ) by a specified amount. For example, ref,maxis 2V, the minimum reference voltage V ref,min may be set to 1.4V, but is not limited to this.

[0487] The first comparator 195a detects a differential DC voltage V sub is the maximum reference voltage V ref,max The second comparator 195b outputs a first signal a11 indicating whether the differential DC voltage V sub is the minimum reference voltage V ref,min A second signal a21 can be output indicative of whether it is higher or not.

[0488] Meanwhile, since a high voltage may still be generated at the input terminals of the first and second comparators 195a and 195b, the first and second comparators 195a and 195b are turned off at the rated voltage V dd Therefore, the first and second comparators 195a and 195b may have a rated voltage corresponding to the supply voltage V dd may be supplied as is to drive the inverter 10.

[0489] According to one embodiment, the first and second comparators 195a, 195b may include an open-loop 2-stage Op-amp.

[0490] The first and second level shifters 196a and 196b can reduce the voltage of the output signals of the comparators 195a and 195b.

[0491] The gate voltage of the MOSFET included in the logic circuit 197 is equal to the rated voltage V dd Since the voltage levels of the first and second signals a11 and a21 are lowered, they must be input to the logic circuit 197. Therefore, by using the level shifters 196a and 196b, it is possible to maintain the signs of the first and second signals a11 and a21 and lower only the magnitude of the voltages.

[0492] The first signal a11 output from the first comparator 195a may be input to the first level shifter 196a. The first level shifter 196a may output a third signal a12 in which the voltage level of the first signal a11 is lowered.

[0493] The second signal a21 output from the second comparator 195b may be input to the second level shifter 196b. The second level shifter 196b can output a fourth signal a22 in which the voltage level of the second signal a21 is lowered.

[0494] The rated voltage of the input terminals of the level shifters 196a and 196b is the supply voltage V dd The rated voltage of the output terminals of the level shifters 196a and 196b can correspond to the supply voltage V dd It may be lower. For example, the supply voltage V dd may be 12V, and the rated voltage at the output terminals of the level shifters 196a and 196b may be 5V.

[0495] The third signal a12 and the fourth signal a22 may be input to the logic circuit 197. The logic circuit 197 uses the third signal a12 and the fourth signal a22 to calculate a differential DC voltage V sub is the maximum reference voltage V ref,max and the minimum reference voltage V ref,min or 1. The fifth signal a3 may be a digital signal that is either 0 or 1. For example, when the fifth signal a3 indicates 0, the second amplifier 132P is in a normal state, and when the fifth signal a3 indicates 1, the second amplifier 132P is in a fault state. Of course, the reverse is also possible.

[0496] 28, a third signal a12 which is an output of a first level shifter 196a and a fourth signal a22 which is an output of a second level shifter 196b may be input to a logic circuit 197. The logic circuit 197 may output a fifth signal a3 based on the third signal a12 and the fourth signal a22 which are input. For example, the logic circuit 197 may have a truth table such as Table 1 below. [Table 1]

[0497] In one embodiment, the first comparator 195a detects a differential DC voltage V sub is the maximum reference voltage V ref,max If the first signal a11 is smaller than the second comparator 195b, the third signal a12 can output a high signal indicating 1. In that case, since the first signal a11 indicates 1, the third signal a12 can also indicate 1. In one embodiment, the second comparator 195b compares the differential DC voltage V sub is the minimum reference voltage V ref,min If it is greater, a low signal indicating 0 can be output. In that case, since the second signal a21 indicates 0, the fourth signal a22 can also indicate 0.

[0498] According to the embodiment described above, when the fifth signal a3 in Table 1 indicates 0, it can be determined that the second amplifier unit 132P operates normally. When the fifth signal a3 indicates 1, it can be determined that the second amplifier unit 132P malfunctions.

[0499] However, the logic circuit 197 shown in Fig. 28 and the above truth table are merely examples, and the present invention is not limited thereto. According to various embodiments, the second malfunction detection unit 192P may be designed to output a fifth signal a3 indicating the presence or absence of a malfunction of the second amplification unit 132P.

[0500] 28 again, the LED driver 14 may be connected to the output terminal t3 of the logic circuit 197. The LED driver 14 can drive the external LED 15 of the IC chip 500P based on the fifth signal a3.

[0501] For example, when the fifth signal a3 indicates 1, the LED driver 14 can turn on the external LED 15. The turned-on external LED 15 can indicate a malfunction state. When the fifth signal a3 indicates 0, the LED driver 14 can turn off the external LED 15. The turned-off external LED 15 can indicate a normal state.

[0502] The logic circuit 197 may be provided with a small size MOSFET for efficiency. The fifth signal a3, which is the output of the logic circuit 197, may be, for example, 0V or more and 5V or less. The LED driver 14 connected to the output terminal t3 of the logic circuit 197 may be, for example, an NMOS LED driver. In another embodiment, the output terminal t3 of the logic circuit 197 may be connected to a malfunction determination unit.

[0503] Meanwhile, as described above, the output terminals of the level shifters 196a, 196b and the logic circuit 197 may have a lower rated voltage than the subtractor 194, the comparators 195a, 195b and the input terminals of the level shifters 196a, 196b.

[0504] Therefore, the input terminals of the subtractor 194, the comparators 195a and 195b, and the level shifters 196a and 196b are connected to V dd The output terminals of the level shifters 196a and 196b and the logic circuit 197 may be supplied with V ddA lower supply voltage may be provided. As an example, the inputs of the subtractor 194, the comparators 195a, 195b and the level shifters 196a, 196b may be driven at 12V. The outputs of the level shifters 196a, 196b and the logic circuit 197 may be driven at 5V. Thus, referring to FIG. 27, the subtractor 194, the comparators 195a, 195b and the inputs of the level shifters 196a, 196b are shown to be included in a high supply voltage domain, and the outputs of the level shifters 196a, 196b and the logic circuit 197 are shown to be included in a low supply voltage domain. The high supply voltage domain and the low supply voltage domain do not indicate actual physical domains, but are terms to distinguish between components driven by a high supply voltage and components driven by a low supply voltage.

[0505] The above description of the second malfunction detection unit 192P can also be applied to the first malfunction detection unit 191P. In the first malfunction detection unit 191P, a subtractor 194 is connected to two nodes included in the first amplifier unit 131P to output a differential DC voltage V sub The only difference between this and the second malfunction detection section 192P is that it detects the above. FIG. 29 is a circuit diagram of the second integrated circuit unit 1321P and the second malfunction detection unit 192P according to an embodiment of the present invention.

[0506] 29 together with FIG. 24, the second integrated circuit unit 1321P of the second amplifier unit includes a first transistor 11, a second transistor 12, a diode 13, R npn , R pnp , R e The second malfunction detection unit 192P may include a subtractor 194, first and second comparators 195a and 195b, first and second level shifters 196a and 196b, and a logic circuit 197. In one embodiment, the second malfunction detection unit 192P may further include an LED driver 14 at an output terminal of the logic circuit 197. In another embodiment, the second malfunction detection unit 192P may have a malfunction determination unit connected to an output terminal of the logic circuit 197.

[0507] Since the second malfunction detection section 192P must not affect the operation of the second amplifier section 132P including the second integrated circuit section 1321P, the subtractor 194 of the second malfunction detection section 192P may have a high input impedance.

[0508] The second malfunction detection unit 192P does not need to be operated all the time, but only needs to be operated when a malfunction check is required. Therefore, in order to reduce unnecessary power consumption, a switch 16 is provided, and only the second malfunction detection unit 192P can be selectively turned off.

[0509] The switch 16 may be present outside the IC chip 500P. The IC chip 500P may further include another terminal t8 for selectively supplying power to the second malfunction detection unit 192P based on the state of the switch 16. The switch 16 may be connected between the third device 400 and the terminal t8.

[0510] On the other hand, the second malfunction detection unit 192P may include components driven by a high supply voltage and components driven by a low supply voltage. For example, the input terminals of the subtractor 194, the comparators 195a and 195b, and the level shifters 196a and 196b are connected to the high supply voltage V dd The outputs of the level shifters 196a and 196b and the logic circuit 197 may be driven by the supply voltage V dd It may be driven at a lower voltage.

[0511] In one embodiment, the second integrated circuit unit 1321P and the second malfunction detection unit 192P may be physically integrated into one IC chip 502P. For example, the IC chip 502P may include a terminal t1 for connecting to the third device 400, a terminal t2 for connecting to a second reference potential, an output terminal t3 of the second malfunction detection unit 192P, terminals (e.g., t4, t5, t6, t7) for connecting to the second non-integrated circuit unit 1322P, and a terminal t8 that can turn on / off the drive of the second malfunction detection unit 192P.

[0512] On the other hand, while FIG. 29 shows an embodiment in which the emitter nodes of the first and second transistors 11, 12 are connected to the input terminals of the subtractor 194, in other embodiments, the base nodes of the first and second transistors 11, 12 may be connected to the input terminals of the subtractor 194. The above description of the second malfunction detection unit 192P including the switch 16 and the voltage distribution circuit 17 is also applicable to the first malfunction detection unit 191P.

[0513] The malfunction detection section 190P may further include a malfunction determination section 193P. The malfunction determination section 193P may be connected to an output terminal of a logic circuit included in the first malfunction detection section 191P and an output terminal of a logic circuit included in the second malfunction detection section 192P.

[0514] In one embodiment, the malfunction judgment unit 193P may include a logic circuit 197 shown in FIG. 28. The output signal X of the first malfunction detection unit 191P and the output signal Y of the second malfunction detection unit 192P may be input to the logic circuit of the malfunction judgment unit 193P. The logic circuit of the malfunction judgment unit 193P may output a sixth signal Z indicating whether the operation state of the amplifier unit 130P is normal or not based on the output signal X and the output signal Y. The sixth signal may be a digital signal that is one of 0 and 1. For example, when the sixth signal indicates 0, the amplifier unit 130P is in a normal state, and when the sixth signal indicates 1, the amplifier unit 130P is in a fault state. Of course, the opposite case is also possible.

[0515] The malfunction determination unit 193P can determine that the operation state of the amplifier unit 130P is normal when both the output signal X and the output signal Y are signals corresponding to the normal state. That is, the malfunction determination unit 193P can output a signal indicating that the operation state of the amplifier unit 130P is normal only when both the operation states of the first amplifier unit 131P and the second amplifier unit 132P are normal. The malfunction detection unit 190P includes a malfunction determination unit 193P, and can ultimately determine a malfunction of the amplifier unit 130P from each operation state of the first amplifier unit 131P and the second amplifier unit 132P, and can output a signal indicating the normal state or the fault state of the amplifier unit 130P.

[0516] 30 is a schematic diagram showing the configuration of an active voltage compensator 100P-2 according to still another embodiment of the present invention. In the following, a description of the contents that overlap with the contents described with reference to FIGS. 1 to 29 will be omitted.

[0517] 30, the active voltage compensation device 100P-2 can actively compensate for noise voltages input in common mode to each of the large current paths 111, 112, and 113 connected to the first device 300.

[0518] To this end, an active voltage compensation device 100P-2 according to another embodiment of the present invention may include three large current paths 111, 112, 113, a sensing transformer 120P-2, an amplifier unit 130P, an amplified signal feedback unit 150P, a compensation transformer 160P-2, and a malfunction detection unit 190P.

[0519] In comparison with the active voltage compensation apparatus 100P according to the above-described embodiment, the active voltage compensation apparatus 100P-2 according to the embodiment shown in Fig. 30 includes three large current paths 111, 112, and 113, and thus differs in the sensing transformer 120P-2 and the compensation transformer 160P-2. Therefore, the following description of the active voltage compensation apparatus 100P will focus on the above-mentioned differences.

[0520] The active voltage compensation device 100P-2 may include a first large current path 111, a second large current path 112, and a third large current path 113 that are distinct from one another. According to an embodiment, the first large current path 111 may be an R-phase power line, the second large current path 112 may be an S-phase power line, and the third large current path 113 may be a T-phase power line. n The first currents I11, I12, and I13 may be input to the first large current path 111, the second large current path 112, and the third large current path 113, respectively, in a common mode.

[0521] The primary side 121P-2 of the sensing transformer 120P-2 is disposed in each of the first, second and third large current paths 111, 112 and 113, and can generate an induced voltage in the secondary side 122P-2. The magnetic flux densities generated in the sensing transformer 120P-2 by the first currents I11, I12 and I13 on the three large current paths 111, 112 and 113 reinforce each other. In the active voltage compensation device 100P-2, the amplifier 130P may be realized by an amplifier 130P-1 shown in FIG.

[0522] Meanwhile, the secondary side 162P-2 of the compensation transformer 160P-2 may be disposed in each of the first large current path 111, the second large current path 112, and the third large current path 113. The compensation transformer 160P-2 can generate compensation voltages in series for each of the three large current paths 111, 112, and 113 that are the secondary side 162P-2, based on the voltage V1 of the primary side 161P-2 output from the second amplifier unit 132P.

[0523] The active voltage compensation device 100P-2 according to this embodiment can perform voltage compensation for common-mode noise on the power lines of a three-phase, three-wire power system. It goes without saying that the active voltage compensation devices according to the various embodiments of the present invention can be modified so as to be applicable to a three-phase four-wire system according to the technical concept of the present invention.

[0524] In the active voltage compensator 100, the integrated circuit unit of the amplifier and the malfunction detection unit can be integrated into one IC chip, and the IC chip of the active voltage compensator can be commercially available as an independent component with versatility. In addition, an active voltage compensator including an IC chip can be manufactured as an independent module and commercially available. Such an active voltage compensator can detect malfunctions as an independent module regardless of the characteristics of the surrounding electrical system.

[0525] The specific implementation described in the present invention is one embodiment and does not limit the scope of the present invention in any way. For the sake of brevity of the specification, descriptions of conventional electronic configurations, control systems, software, and other functional aspects of the system may be omitted. In addition, the wire connections or connecting members between components shown in the drawings are illustrative of functional connections and / or physical or circuit connections, and may be replaced in an actual device and may be realized as various additional functional connections, physical connections, or circuit connections.

[0526] The spirit of the present invention should not be limited to the above-described embodiments, and not only the scope of the appended claims, but also any scope equivalent to or modified equivalently from the scope of the claims can be said to belong to the scope of the spirit of the present invention. [Industrial Applicability]

[0527] The embodiments of the present invention relate to an active voltage compensation device, and can be used in electronic devices such as home appliances, industrial electrical products, electric vehicles, aviation, energy storage systems, etc. However, the industrial applicability of the embodiments of the present invention is not limited to the above.

Claims

1. An active voltage compensation device that actively compensates for noise generated in a common mode in each of at least two or more large current paths, comprising: a sensing unit that senses a common mode noise current on the large current path and generates an output signal corresponding to the noise current; an amplifier unit that amplifies an output signal of the sensing unit to generate an amplified signal; an amplified signal feedback unit that transmits a feedback signal corresponding to the amplified signal of the amplifier unit back to the amplifier unit; a compensation section that generates a compensation voltage on the high current path based on an output voltage corresponding to the amplified signal.

2. the amplifier unit includes a first amplifier unit and a second amplifier unit, the first amplifier amplifies an output signal of the sensing unit to generate the output voltage; 2. The active voltage compensation device according to claim 1, wherein the second amplifier section is connected to the first amplifier section and generates an output current required for noise compensation.

3. 2. The active voltage compensation device according to claim 1, wherein the sensing unit is configured such that an electric wire for generating an input voltage of the amplifier unit is wound around a CM choke around which the two or more high current paths are wound.

4. 2. The active voltage compensation device according to claim 1, wherein the compensation section is formed such that an electric wire for outputting the output signal of the amplifier section passes through a core, and the large current path passes through the core or is wound around the core one or more times.

5. the at least two or more high current paths transmit a high current supplied by a second device to a first device; The amplifier unit includes a non-integrated circuit unit and a one-chip integrated circuit unit, the non-integrated circuit part is designed with at least one power system of the first device and the second device; 2. The active voltage compensation device of claim 1, wherein the single chip integrated circuit portion is independent of power rating specifications of the first device and the second device.

6. The active voltage compensation device according to claim 5 , wherein the non-integrated circuit part is designed according to a power rating of the first device.

7. 7. The active voltage compensation device of claim 6, wherein the single chip integrated circuit device is used for the first device of various power systems depending on the design of the non-integrated circuit device.

8. the single-chip integrated circuit unit includes a first integrated circuit unit and a second integrated circuit unit, The active voltage compensation apparatus of claim 5 , wherein the second integrated circuit portion includes a first transistor, a second transistor, and one or more resistors.

9. The active voltage compensation apparatus of claim 8 , wherein the first integrated circuit portion includes one or more transistors.

10. The sensing unit includes a sensing transformer, The compensation unit includes a compensation transformer.

6. The active voltage compensation device according to claim 5, wherein a configuration of the single chip integrated circuit unit is independent of a turns ratio between the sensing transformer and the compensation transformer and a target voltage gain of the amplifier unit.

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