Methods for processing and manufacturing solar cells

Abstract

A method for processing at least one cut solar cell, the method comprising the steps of providing at least one solar cell, the cell having previously been subjected to a cutting process, and performing a carrier injection process on at least the cut end of the cell.

Description

[Technical field]

[0001] The present invention relates to a method for treating a solar cell, a method for manufacturing a solar cell, and solar cells treated or manufactured according to the method. [Background technology]

[0002] Solar cells (also called photovoltaic cells) are used to provide electrical energy from sunlight via the photovoltaic effect. Two of the main drivers for technological development of existing solar cell technology are (i) the desire to increase the efficiency of the cells, and (ii) the desire to decrease the cost of manufacturing the cells.

[0003] One of the major electron loss mechanisms in solar cells is carrier recombination within the cell, particularly at the electrical contacts as a result of the direct metal / silicon interface, which is characterized by a high density of recombination active localized states. This high surface state density increases the carrier recombination rate at the interface. The use of passivation contact techniques, such as silicon heterojunction (HJT) solar cells, has been found to reduce or minimize these losses. HJT solar cells are typically characterized by a symmetrical structure comprising a crystalline silicon wafer, c-Si (sometimes referred to as the "substrate"), surrounded by front and back layers of amorphous silicon, generally hydrogenated amorphous silicon (a-Si:H). The front and back a-Si layers may be a combination of intrinsic / doped layers, where the intrinsic portion of the layer constitutes the passivation layer and the doped portion of the layer constitutes the collector layer (e.g., electron or hole collector layer). Transparent conductive oxide (TCO) layers are typically disposed on the front and back a-Si layers, both of which function as anti-reflective coatings as well as allowing charge transport to metal electrodes disposed on the front and back TCO layers. As used herein, the terms "front" and "front" are used to refer to a direction that faces the light source in use (e.g., the sun) and is perpendicular to the front surface of the solar cell, and the terms "back", "back", and "rearward" are intended to refer to the direction opposite the front / front direction.

[0004] Several studies have been conducted to further increase the solar cell efficiency of HJT solar cells. In the paper Kobayashi et al., “Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking”, Solar Energy Materials and Solar Cells, Volume 173, 2017, Pages 43-49, ISSN 0927-0248, it is proposed that light exposure of silicon heterojunction solar cells can increase their operating voltage during exposure and thus their conversion efficiency. The authors attribute this improvement in performance to improved passivation of the heterointerface (c-Si / a-Si).

[0005] US2015013758A1 discloses a process for treating boron-free n-type photovoltaic cells, the process comprising illuminating an n-type heterojunction cell during a heat treatment carried out at a temperature of 20-200°C.

[0006] WO2020221399A1 discloses a method for stabilizing a solar cell, the stabilization step includes heating the solar cell to a temperature above 200°C and irradiating the solar cell with illumination from a light source, where the light source emits light in a wavelength range below 2500 nm, the amount of light emitted by the light source in this wavelength range is greater than 8000 Ws / m2, and the stabilization step includes a temperature treatment with a long temperature peak of up to 10 seconds with a temperature above 350°C.

[0007] All the above studies have focused on improving the efficiency of the complete solar cell by reducing the intrinsic defects in the HJT solar cell, e.g. due to bulk defects or impurities in the c-Si layer or at the c-Si / a-Si interface.

[0008] The present invention has been devised in light of the above considerations. Summary of the Invention

[0009] While existing literature focuses on improving the efficiency of full solar cells due to the reduction of intrinsic defects in the solar cells, the inventors recognize that for solar cells that undergo a cutting process (e.g., forming cells cut in half), the cutting process can result in an increased defect density at the surface and edges of the half cells after cutting. The use of cells cut in half can provide advantages over full cells, such as improved performance and durability. It is desirable to reduce or minimize the effects of defects introduced during the cutting process that can otherwise reduce the open circuit voltage and fill factor of the final solar module incorporating the cells.

[0010] The inventors have found that providing a post-cutting treatment to cut batteries can improve the performance of those batteries compared to cut batteries that do not receive such treatment.

[0011] Thus, in a first aspect, the present invention provides a method for treating at least one cut solar cell, comprising: Providing at least one solar cell, the cell having previously been subjected to a cutting process; and performing a carrier injection process on at least the cut edge of the battery.

[0012] Specifically, the inventors have demonstrated that by performing a carrier injection treatment on at least the cut end of a cut solar cell, the photoluminescence intensity, module V oc and / or module fill factor % (FF%). Moreover, the inventors have surprisingly found that the improvement in one or more of these performance indicators can be improved to a greater extent than the comparative improvement seen when the same treatment is applied to a cell that has not previously been subjected to the cutting process.

[0013] The inventors believe that this method may be applicable to several different types of solar cells, for example, the solar cell may be a heterojunction solar cell (HJT solar cell). Alternatively, it may be a PERC solar cell, such as a P-type mono PERC cell.

[0014] In a preferred embodiment, the solar cell is a heterojunction solar cell. As discussed above, HJT solar cells are typically characterized by a symmetrical structure comprising a crystalline silicon wafer, c-Si, surrounded by front and back layers of amorphous silicon (a-Si), typically hydrogenated amorphous silicon (a-Si:H). Without wishing to be bound by theory, the inventors hypothesize that by applying a carrier injection process to the cut cell, the injected carriers may improve passivation at the a-Si / c-Si interface, both in the bulk cell and at the cut edge, e.g. as a result of energy release from the recombination of the injected carriers that helps repair nearby interface states. Alternatively or additionally, the carrier injection process may cause an increase in the mobility of hydrogen gas that is "trapped" during the formation of the amorphous layer. This increased mobility may allow hydrogen to migrate to defect sites in the cell and passivate them, thus reducing the overall defect density.

[0015] The carrier injection process may include a light-based carrier injection process. Alternatively, the carrier injection process may include a charge-based carrier injection process. The light-based carrier injection process may include, for example, a halogen lamp process, an LED lamp process, and / or a laser process. The charge-based carrier injection process may include, for example, an electron injection process.

[0016] Therefore, the carrier injection process is -Halogen lamp treatment, -LED lamp treatment, -Laser treatment, - and / or electron injection treatment.

[0017] In some methods, the carrier injection process consists of one type of process selected from these four types of processes. In other methods, two or more of these types of carrier injection processes may be used in combination, e.g., sequentially or simultaneously. However, since the benefits from applying different types of processes are generally not additive, it may be preferable to use only a single type of process from the above list to reduce process complexity.

[0018] The carrier injection process may include a single sequential carrier injection process step performed for a predetermined time using predetermined process parameters (selected based on the type of carrier injection process being performed).

[0019] Alternatively, the carrier injection process may include multiple separate carrier injection process sub-steps. In other words, the carrier injection process may be performed over multiple separate predetermined time periods. The number of separate carrier injection process steps is not particularly limited, and the carrier injection process may include two or more, three or more, four or more, or five or more sub-steps. By performing a carrier injection process that includes multiple separate carrier injection process sub-steps, the advantage of a better throughput of the cells being processed is obtained. In other words, such a method may improve industrial efficiency.

[0020] The total carrier injection process time may vary depending on the type of carrier injection process performed, for example, light-based carrier injection processes may require less process time than charge-based carrier injection processes because they may be relatively higher energy intensity processes than charge-based processing methods.

[0021] The total carrier injection time may range from 5 seconds to 1 hour. A total carrier injection treatment time of 5 seconds or more is preferred, since a minimum exposure time of 5 seconds or more may be required to observe any significant improvement in the efficiency of the cell. A total carrier injection treatment time of 1 hour or less is preferred, since the thermal budget (total amount of thermal energy transferred during a given high temperature operation) increases with increasing treatment length. Providing treatment for more than 1 hour may result in degradation of the cell and thus a decrease in its efficiency. Furthermore, providing long treatment times may also reduce the throughput of cells that can be processed in a given period of time, thereby reducing process efficiency.

[0022] If the carrier injection process includes multiple separate carrier injection process sub-steps, the processing time between each of these sub-steps may be 5 to 800 seconds. In the case of a light-based carrier injection process, the processing time during each sub-step may be, for example, 5 to 120 seconds, more preferably 10 to 60 seconds. In the case of a charge-based carrier injection process, the processing time during each sub-step may be, for example, 100 to 800 seconds, more preferably 200 to 400 seconds. In this case, the total carrier injection process time can be calculated as the cumulative total time of execution of all carrier injection process sub-steps. For example, if four separate processing steps are performed, each for 300 seconds, the total processing time will be 1200 seconds (20 minutes).

[0023] The carrier injection process may be performed such that the temperature of the cell during processing does not exceed 300°C, 250°C, 200°C, 150°C, or 100°C. In some embodiments, the temperature of the cell during processing may range from 100°C to 300°C. If the cell temperature during processing is lower than 100°C, hydrogen passivation at the a-Si / c-Si interface may not be as effective because the lower temperature may reduce the concentration of hydrogen in the minority species. If the cell temperature during processing is higher than 300°C, these higher temperatures may cause dissociation of previously passivated Si-H bonds, thereby resulting in a decrease in cell performance.

[0024] The optimal temperature of the battery during the carrier injection process may depend on the type of carrier injection.

[0025] For light-based carrier injection processing, the temperature of the cell may rise from about room temperature and peak at a temperature of 200° C. or more. Upon removal of illumination, the cell may rapidly return to room temperature (e.g., within minutes or seconds). In particular, when light-based carrier injection is performed on a single cell, the single cell may have a relatively large effective surface area per unit volume, thereby allowing for rapid heat transfer from the cell at the end of processing.

[0026] In contrast, in the case of charge-based carrier injection processing, a slower rate of heating and cooling may be observed during and after processing. This may be particularly true when multiple cells are stacked for simultaneous processing, as will be discussed in more detail below, because the effective surface area per unit volume for heat transfer may be relatively small. For example, when a charge-based carrier injection processing is performed, the temperature of the cell may increase from room temperature and be maintained at about 130° C. for the duration of the processing. When the processing is stopped, it may take up to 20 minutes to cool back to room temperature. Because the cooling rate for the charge-based carrier injection processing may be slower than the light-based processing, the peak temperature during the carrier injection processing may be selected to be relatively lower than the peak temperature for the light-based processing to avoid damage to the cell caused by prolonged exposure to high temperatures.

[0027] The process temperature may remain substantially constant throughout the carrier injection process. Alternatively, the process temperature may be varied throughout the carrier injection process. If the carrier injection process includes multiple separate carrier injection process substeps, the process temperature may be substantially the same throughout all substeps or may vary between substeps.

[0028] One or more further process parameters of the carrier injection process, including but not limited to the applied current, power, and / or light intensity (if applicable) of the process, may remain substantially constant throughout the carrier injection process. Alternatively, one or more of such process parameters may be varied throughout the carrier injection process. In particular, when the carrier injection process is performed as multiple separate carrier injection process sub-steps, the applied current, power, and / or light intensity (if applicable) may be varied between the separate carrier injection process sub-steps.

[0029] The selection of appropriate process parameters (applied current, power, light intensity, etc.) for each type of carrier injection process above (halogen lamp process, LED lamp process, electron injection process, and / or laser process) is described in more detail below, along with a description of further optional features associated with each type of carrier injection process.

[0030] Where the carrier injection process comprises a charge-based carrier injection process, such as an electron injection process, the carrier injection process may comprise at least exposing the cut end of the cell to electrons injected by the process.

[0031] In some charge-based carrier injection methods, a voltage may be applied to one or more batteries to cause a current to flow. In one suitable arrangement, a voltage may be applied to one or more batteries by placing the battery in electrical connection with two electrodes of a process unit to form a complete circuit, and then a power supply unit of the process unit applies a voltage between the electrodes, causing a current to flow through the battery. The applied voltage may be a fixed or near fixed voltage.

[0032] The charge-based carrier injection process may be performed at any suitable predetermined applied current. In some embodiments, the process may be performed at an applied current of 4-10 A. In preferred embodiments, the process may be performed at an applied current of 5-7 A, for example, about 4.3 A, about 5 A, about 5.5 A, about 5.8 A, about 6 A, or about 6.7 A. The applied current may be the same throughout the process. Alternatively, the applied current may be varied throughout the process. For example, if the process is performed as a series of substeps, the applied current during a first substep may be different from the applied current during a second substep.

[0033] In some preferred methods, the charge-based carrier injection process may be performed as a series of four sub-steps, each sub-step performed for a period of 300 seconds, for a total process time of 1200 seconds. The applied currents during each of the four sub-steps may be, for example, 4.3 / 6 / 6 / 6 A, 5.5 / 5.8 / 5.8 / 5.8 A, 6 / 6.7 / 6.7 / 6.7 A, or 5 / 5 / 5 / 5 A.

[0034] During the treatment process, as current flows through the battery, power is dissipated and the resulting heat may increase the temperature of the battery. The battery temperature of the one or more batteries being treated may be monitored, for example, by one or more temperature sensors. While any suitable temperature sensor may be used, a particularly preferred type of temperature sensor is an infrared sensor that allows for non-invasive temperature measurement. The temperature to be maintained in the battery (the "set point temperature") may then be set as a parameter of the treatment. In one arrangement, when the temperature sensor detects that the battery temperature exceeds the set point temperature, a feedback loop may trigger one or more actions to be performed to maintain the battery temperature at the set point temperature. For example, when the temperature sensor detects that the battery temperature exceeds the set point temperature, the feedback loop may trigger a cooling mechanism, thereby reducing the temperature of the battery to maintain it at the desired set point temperature. For example, in one form, a compressed dry air (CDA) source may be triggered to be turned on, thereby maintaining the temperature of the battery at the set point temperature by applying compressed dry air.

[0035] In one particularly preferred form, multiple cells may be processed simultaneously. In such a form, multiple cells may be stacked together in a coin stack and loaded into a magazine. The cells may be stacked in series, with the negative side of one cell in contact with the positive side of an adjacent cell, or vice versa. To perform charge-based carrier injection processing, the cell stack is sandwiched between two metal plates in the magazine and disposed between two electrodes of a process unit to form a complete circuit. A power supply unit in the process unit may then apply a voltage between the electrodes causing a current to flow through the multiple cells.

[0036] If the carrier injection treatment includes an LED lamp treatment, the LED lamp treatment includes exposing at least the cut end of the cell to light emitted from an LED lamp with a light intensity of 80 to 180 suns, where 1 sun corresponds to standard illumination at AM1.5. The AM1.5 global spectrum is designed for flat plate modules and has a maximum light intensity of 1000 W / m2 as defined in ASTM G-173-03 (International Standard ISO 9845-1, 1992). 2 (100mW / cm 2 ) The light intensity may be 90 suns or more, 100 suns or more, 110 suns or more, 120 suns or more, 130 suns or more, 140 suns or more, or 150 suns or more in some cases. The light intensity may be 180 suns or less, 170 suns or less, 160 suns or less, or 150 suns or less in some cases.

[0037] The distance between the battery being treated and the illumination light source may be in the range of 5 to 40 cm. For example, the distance between the battery being treated and the illumination light source may be 5 cm or more, 10 cm or more, 15 cm or more, or 20 cm or more. The distance between the battery being treated and the illumination light source may be 40 cm or less, 35 cm or less, 30 cm or less, or 25 cm or less.

[0038] In one preferred method, the cells may be transported into a submersion chamber equipped with one or more LED lamp panels configured to emit white LED light (full spectrum - equivalent to AM1.5 global spectrum). The length of treatment time (sometimes referred to as exposure time or treatment time) may be determined by the conveyor speed and the length of the submersion chamber.

[0039] During the soaking process, the temperature of the battery may increase to a temperature of 200° C. or more. Preferably, the battery is not heated to a temperature higher than 300° C. for the reasons discussed above. In a similar manner as described above in connection with the charge-based carrier injection process, the battery temperature of one or more batteries being processed may be monitored, for example, by one or more temperature sensors during the process. The temperature maintained within the battery ("set point temperature") may also be set as a parameter of the process, for example, with suitable action being taken to maintain the battery temperature at the set point temperature when a temperature sensor detects that the battery temperature exceeds the set point temperature.

[0040] When the carrier injection treatment includes a halogen lamp treatment, the halogen lamp treatment may include a step of exposing at least the cut end of the battery to light emitted from a halogen lamp having a luminous flux (lm) in the range of 10,000 lm to 60,000 lm, more preferably about 20,000 lm to about 30,000 lm, more preferably about 22,000 lm to about 24,000 lm.

[0041] One convenient choice is a commercially available 1000 W halogen lamp with a luminous flux of about 23400 lm. This has been found to provide a suitable performance boost for the cells during processing. However, other commercially available halogen lamps are available that may have lumen / power ratios from 1 lumen per watt to 637 lumens per watt. These other commercially available lamps may also be suitable for carrying out the carrier injection process according to the present invention.

[0042] The distance between the battery being treated and the illumination light source may be in the range of 5-40 cm. For example, the distance between the battery being treated and the illumination light source may be 5 cm or more, 10 cm or more, 15 cm or more, or 20 cm or more. The distance between the battery being treated and the illumination light source may be 40 cm or less, 35 cm or less, 30 cm or less, or 25 cm or less.

[0043] In one preferred method, the cells may be transported into a submersion chamber equipped with one or more halogen lamp panels configured to emit white light (full spectrum - equivalent to AM1.5 global spectrum). The length of treatment time (sometimes referred to as exposure time or treatment time) may be determined by the conveyor speed and the length of the submersion chamber.

[0044] During the soaking process, the temperature of the battery may rise to 200° C. or more. Preferably, the battery is not heated to a temperature higher than 300° C. for the reasons discussed above. In a similar manner as described above in connection with the charge-based carrier injection process, the battery temperature of one or more batteries being processed may be monitored, for example, by one or more temperature sensors during the process. The temperature maintained within the battery (the "set point temperature") may also be set as a parameter of the process, for example, by a temperature sensor detecting that the battery temperature exceeds the set point temperature, with suitable action being taken to maintain the battery temperature at the set point temperature.

[0045] If the carrier injection process includes laser processing, the laser processing may include exposing at least the cut end of the cell to light emitted from a laser having a specified predetermined wavelength and power.

[0046] The use of laser-based carrier injection processes may be preferred over the use of other light-based carrier injection processes because illumination uniformity can be significantly improved and energy transfer to the cells being processed can be more efficient and effective.

[0047] The laser may have a wavelength in the infrared range. In other words, the laser may have a wavelength in the range of about 700 nm to about 1 mm. More preferably, the wavelength may be in the range of 780 nm to 1300 nm, more preferably 780 nm to 1000 nm. The use of a laser with a wavelength of about 1000 nm may be particularly preferred.

[0048] The laser may have a power in the range of 1000-4000 W, more preferably in the range of 2000 W-3000 W. In some cases, the laser may have a power of about 2800 W.

[0049] One example of a laser that has been found suitable for use in performing such processes is the K1-LIA-Y9000 laser by Dr Laser.

[0050] The distance between the battery being treated and the illumination light source may be in the range of 10-20 cm. For example, the distance between the battery being treated and the illumination light source may be 10 cm or more, or 15 cm or more. The distance between the battery being treated and the illumination light source may be 20 cm or less, or 15 cm or less.

[0051] During the laser-based carrier injection process, the cell may remain substantially stationary.

[0052] Irradiating the cell with laser light may raise the temperature of the cell to a temperature in the range of about 150° C. to 250° C. Preferably, the cell is not heated above 300° C. for reasons discussed above. In a similar manner as described above in connection with the charge-based carrier injection process, the cell temperature of one or more cells being processed may be monitored, for example, by one or more temperature sensors during processing. A temperature to be maintained within the cell (a "set point temperature") may also be set as a parameter of the process, for example, with suitable action being taken to maintain the cell temperature at the set point temperature upon a temperature sensor detecting that the cell temperature exceeds the set point temperature.

[0053] The method according to the invention may include the processing of a single cut solar cell that has been subjected to a cutting process prior to the processing. However, in a preferred method, multiple cut solar cell cells are processed simultaneously. The number of cells processed simultaneously is not particularly limited other than by practical considerations of available processing equipment. Thus, the method may include processing 2 or more, 5 or more, 10 or more, 20 or more, 30 or more, 40 or more, 50 or more, 100 or more, 200 or more, 300 or more, or 400 or more cut solar cell cells simultaneously. Processing multiple solar cells with a single processing method can dramatically improve the efficiency of the processing process and reduce the manufacturing cost of the processed solar cells. However, to avoid overheating of the cells during the processing process, it may be preferable to limit the total number of cells processed at any one time to 400 cells or less.

[0054] To process multiple cells simultaneously, multiple cut cells may be stacked and the stacked cells may be subjected to the carrier injection process simultaneously. The cells may be stacked such that the cut ends of the cells are substantially aligned with each other. In this way, the carrier injection process can be more easily performed on multiple cut ends simultaneously. It is preferred that the cut ends of multiple cells are substantially aligned, although a small amount of misalignment may be tolerated.

[0055] Thus, the method is providing a plurality of solar cells, each of the cells having previously been subjected to a cutting process; stacking the plurality of solar cells such that the cut ends of each of the cells are substantially aligned with the cut ends of the remaining solar cells of the plurality of solar cells; and performing a carrier injection process simultaneously on the cut ends of the multiple solar cells.

[0056] The treatment method may be carried out in a standalone manner, for example on commercially available batteries.

[0057] Alternatively, the treatment method may form part of a method for manufacturing a heterojunction solar cell.In a preferred embodiment, the solar cell is a heterojunction solar cell.

[0058] Thus, in a second aspect, the present invention provides a method for manufacturing a solar cell, the method comprising: (a) providing a crystalline silicon (c-Si) wafer; (b) depositing front and back amorphous silicon (a-Si) layers on the front and back sides, respectively, of the crystalline silicon wafer; (c) depositing front and back transparent conductive oxide (TCO) layers on the front and back amorphous silicon (a-Si) layers, respectively; (d) performing metallization to form one or more metal electrodes on the front and / or back TCO layer; (e) cutting the solar cell (or the partially fabricated solar cell); (f) performing a carrier injection process on at least the cut end of the battery; A step (e) of cutting the solar cell is performed any time after step (a) and after step (d), and a step (f) of performing a carrier injection process on at least the cut end of the cell is performed any time after both steps (b) and (e) have been performed.

[0059] Step (a) of providing a crystalline silicon (c-Si) wafer may include obtaining (e.g., by purchasing) a crystalline silicon (c-Si) wafer from a commercial source. Alternatively, it may include manufacturing the crystalline silicon (c-Si) wafer in any suitable manner, for example, by growing a single crystal silicon ingot or boule via the Czochralski (CZ) method, and cutting it into wafers in a manner well known in the art.

[0060] The c-Si wafer may also be referred to herein as a solar cell substrate. The substrate may be an n-type semiconductor, or the substrate may be a p-type semiconductor. When the substrate is an n-type semiconductor, the semiconductor material may be configured to include impurities of group V elements, such as phosphor (P), arsenic (As), and antimony (Sb). When the substrate is a p-type semiconductor material, it may contain impurities of group III elements, such as boron (B), gallium (Ga), and indium (In). In a preferred embodiment, the substrate comprises an n-type monocrystalline silicon wafer. The n-type c-Si may exhibit longer life characteristics when used as part of a heterojunction solar cell compared to a p-type monocrystalline silicon wafer.

[0061] The method may include a step of texturing the crystalline silicon (c-Si) wafer after step (a), for example between steps (a) and (b). The texturing may form an uneven surface or a surface with uneven properties. Texturing the c-Si wafer may reduce the light reflectance and improve the light capture at the solar cell surface and thus increase the efficiency of the solar cell. The texturing may be performed in any conventional manner, for example by etching into the (111) plane, by anisotropic wet chemical etching to form a pyramidal texture on the (100) silicon wafer surface.

[0062] In some methods, the texturing step may include the substeps of cleaning the c-Si substrate of organic surface contamination, performing the texturing by applying a mixture of KOH and an additive to achieve the required reflectivity, and cleaning the c-Si substrate to remove organic and metallic contamination (if present) and surface oxides.

[0063] In some embodiments, each of the constituent layers of the solar cell (e.g., the substrate, the hole collector layer, the electron collector layer, the passivation layer, and / or the transparent conductive layer) may be textured such that they have a non-uniform surface or have non-uniform properties.

[0064] The amorphous silicon (a-Si) deposited in step (b) may be hydrogenated amorphous silicon (a-Si:H). Step (b) of depositing front and back amorphous silicon (a-Si) layers on the front and back sides, respectively, of the crystalline silicon wafer comprises: (i) depositing front and back intrinsic amorphous silicon (a-Si(i)) layers on the front and back sides, respectively, of a crystalline silicon wafer; (ii) depositing a p-doped or n-doped amorphous silicon (a-Si(n), a-Si(p)) layer on each of the front and back intrinsic amorphous silicon (a-Si(i)) layers.

[0065] If the amorphous silicon layer comprises hydrogenated amorphous silicon, these substeps therefore include: (i) depositing front and back intrinsic hydrogenated amorphous silicon (a-Si(i)) layers on the front and back sides, respectively, of a crystalline silicon wafer; (ii) depositing a p-doped or n-doped hydrogenated amorphous silicon (a-Si:H(n), a-Si:H(p)) layer on each of the front and back intrinsic hydrogenated amorphous silicon (a-Si(i)) layers.

[0066] In this manner, the front and back intrinsic amorphous silicon (a-Si(i)) layers function as passivation layers, and the front and back p- or n-doped amorphous silicon (a-Si(n), a-Si(p)) layers function as collector layers (e.g., hole collector layer or electron collector layer). These may be conventionally referred to as "emitter" layers. One of these collector / emitter layers bonds with the substrate to form a pn junction. The other collector / emitter layer functions to collect charge carriers from the substrate.

[0067] During operation of a solar cell, multiple electron-hole pairs are generated by light incident on the substrate. If the substrate is n-type, and the collector layer forming part of the pn junction is p-type, the separated holes will migrate to that collector layer and the separated electrons will migrate to the substrate. The holes will therefore become the majority carriers in that collector layer, and the electrons will become the majority carriers in the substrate and are then collected by the other collector layer.

[0068] When the doped amorphous silicon is an n-type semiconductor, the semiconductor material may be configured to include impurities of Group V elements such as phosphor (P), arsenic (As), and antimony (Sb).When the doped amorphous silicon is a p-type semiconductor material, it may contain impurities of Group III elements such as boron (B), gallium (Ga), and indium (In).

[0069] Step (b) of depositing front and back amorphous silicon (a-Si) layers on the front and back sides of the crystalline silicon wafer, respectively, may be performed in any suitable manner. In a preferred method, this step is performed using plasma enhanced chemical vapor deposition (PECVD). PECVD is a well-established technique for the deposition of a wide variety of films and can be applied in a conventional manner to deposit the amorphous silicon (a-Si) layer. One example of a suitable method is a PECVD deposition process that involves flowing silane and hydrogen gases into a process chamber and utilizing a plasma to form the amorphous silicon layer. A doping gas may be introduced in addition to the silane and hydrogen gases, if necessary, to form a doped n / p layer.

[0070] It is preferred to deposit the subsequent n- and p-layers in separate process steps, while the front i / n-layers are preferably deposited together / sequentially, which may reduce the effects of phosphine contamination at the c-Si and a-Si:H(p) interfaces.

[0071] Step (c) of depositing front and back transparent conductive oxide (TCO) layers on the front and back amorphous silicon (a-Si) layers, respectively, may be performed using physical vapor deposition (PVD). PVD is a well-established technique for the deposition of a wide variety of films and may be applied in a conventional manner to deposit the TCO layers. The PVD process may use a rotating TCO target that is ionized argon gas that impinges and sputters the TCO onto the passivated wafer while it is being transported on a support tray, in the conventional manner for PD processes. This process may then be repeated for both sides of the passivated wafer.

[0072] The particular TCO material used to form the TCO layer is not particularly limited, but in a preferred method, the TCO layer may include indium tin oxide (ITO). The TCO layer may be textured to provide an anti-reflective surface. In this case, the TCO layer can effectively function as an anti-reflective layer that reduces the reflectance of light incident on the solar cell and increases the selectivity of a given wavelength band, thereby increasing the efficiency of the solar cell.

[0073] Step (d), performing metallization to form one or more metal electrodes on the front and / or back TCO layers, may be performed in any suitable manner conventionally known in the art. However, in a preferred form, step (d) comprises: applying a metallization material to the front and / or back TCO layer; and performing a heat treatment to form one or more metal electrodes from the metallization material.

[0074] The step of applying the metallization material may be performed using a printing process, for example by screen printing. Using a printing process to apply the metallization material allows for the formation of fine (i.e., narrow width and small depth) electrodes.

[0075] When a heat treatment is performed to form one or more metal electrodes from the metallization material, the heat treatment may be performed at a temperature not higher than 250°C, for example, the heat treatment may be performed at a temperature in the range of 180°C to 200°C, such as about 185°C, about 190°C, or about 195°C. Performing the heat treatment at a temperature lower than 250°C can reduce or prevent degradation of the underlying amorphous silicon layer during the process. It may be necessary to perform the heat treatment at a temperature higher than 180°C to ensure complete or proper formation of the metal electrodes from the metallization material.

[0076] When the metal electrodes are located on the front side of the solar cell, they may be referred to as "front electrodes." When the metal electrodes are located on the back side of the solar cell, they may be referred to as "back electrodes."

[0077] The front electrode and / or the back electrode may each comprise a plurality of finger electrodes disposed on the respective front and back surfaces of the solar cell. Each finger electrode may be configured to have an axial length substantially greater than its width. Both the width and axial length of the finger electrodes may be measured in a vertical direction within the plane of the respective surface of the solar cell. The finger electrodes may extend in a lateral direction parallel to the width direction of the solar cell.

[0078] The finger electrodes within each of the plurality of front and / or back finger electrodes may be spaced across the respective front and back surfaces of the solar cell to define laterally extending spaces between the finger electrodes. The finger electrodes may be spaced apart in a longitudinal direction that is substantially parallel to the length of the solar cell. Each of the plurality of finger electrodes may be substantially parallel to one another. Thus, the plurality of back finger electrodes may form an array of parallel longitudinally spaced (e.g., equally spaced) finger electrodes.

[0079] The front electrode and / or the back electrode may comprise one or more further conductive elements (e.g., elongated bus bars, or conductive wire portions) configured to form an electrical connection between the finger electrodes and the electrical circuitry of a solar module incorporating the solar cell.

[0080] Step (e) of cutting the solar cells may be performed by a laser-based or laser-assisted cutting process. For example, in some embodiments, cutting the solar cells may include scribing the cells with a laser, followed by mechanically separating the cells along the scribed lines. In other embodiments, cutting the solar cells may include scribing the cells with a laser, heating the cells along the lines, followed by rapid cooling of the heated area by a separate non-laser mechanism. In this process, the scribe creates a sharp crack end, and the heating and rapid cooling creates stresses in the wafer that propagate the crack and separate the cells.

[0081] Alternatively, any other suitable cutting process (e.g. a completely mechanical cutting process) may be used. As mentioned above, the step (e) of cutting the solar cell may be performed at any time after step (a) to after step (d). That is, it may be performed at any time before performing the carrier injection process. For example, cutting the cell or cutting the partially manufactured cell comprising the layered structure may be performed immediately after the step (a) of providing a crystalline silicon (c-Si) wafer. Alternatively, it may be performed immediately after the step of texturing the provided c-Si wafer. Alternatively, it may be performed immediately after performing a PECVD deposition of one or more layers of the layered structure. Alternatively, it may be performed immediately after performing a PVD deposition of one or more layers of the layered structure. Alternatively, it may be performed after metallization of the layered structure.

[0082] As mentioned above, step (f) of performing a carrier injection process at least on the cut end of the cell may be performed at any time after both steps (b) and (e) have been performed, i.e., after the front and back amorphous silicon (a-Si) layers have been deposited on the front and back sides, respectively, of the crystalline silicon wafer, and after the cell (or partially fabricated cell) has been cut. This is necessary because the defect repair mechanism involves the a-Si and c-Si interfaces. Therefore, an a-Si layer must be deposited on the c-Si wafer before performing the carrier injection process.

[0083] In a preferred embodiment, after each of steps (a)-(d) is performed, step (f) is performed of performing a carrier injection treatment at least at the cut end of the cell, which allows for improved passivation of all interfaces within the solar cell, including the a-Si-c-Si interface, the a-Si / TCO interface, and the TCO / electrode interface. Step (f) may be the last step in the solar cell manufacturing process.

[0084] The step (f) of performing a carrier injection process comprises performing at least one process selected from one or more of a light-based carrier injection process, or a charge-based carrier injection process, such as a halogen lamp process, an LED lamp process, an electron injection process, and / or a laser process. Further optional features of the carrier injection process are discussed above in relation to the first aspect of the invention and these apply equally to this aspect of the invention.

[0085] In a third aspect, the present invention provides a cut solar cell which has been subjected to the processing method of the first aspect of the invention or produced according to the production method of the second aspect of the invention.

[0086] Solar cells may be evaluated by one or more performance metrics, including but not limited to photoluminescence intensity (PL intensity). Solar cells according to the invention may demonstrate improved PL intensity compared to modules comprising cells not according to the invention.

[0087] The cut solar cells of the third aspect may be incorporated into a solar cell module. Thus, in a fourth aspect, there is provided a solar module comprising a plurality of solar cells, each according to the third aspect. The solar module may comprise at least a first solar cell and a second solar cell according to the third aspect of the invention. Preferably, the solar module comprises at least a first and a second solar cell according to the third aspect of the invention, an outer casing arranged to cover the first and second solar cells, and an encapsulant interposed between the outer casing and the first and second solar cells.

[0088] The first and second solar cells may be electrically coupled to each other. The solar module may include a plurality of solar cells. When the solar module includes a plurality of solar cells, they may be arranged in an array. The array of solar cells may be arranged in an array extending longitudinally (e.g., along the length) and / or laterally (e.g., across the width) of the solar module. The solar cells may be arranged in a grid, such as a rectangular or square grid pattern.

[0089] When multiple solar cells are present, some or all of the solar cells may be arranged in substantially the same plane. Thus, the solar cells may be arranged in a substantially planar array. The solar cells may each be arranged such that they are aligned in the same reference plane. For example, a first solar cell may be arranged, e.g. oriented, such that the horizontal plane of the first solar cell is aligned with the horizontal plane of the second solar cell. The reference planes of the first and second solar cells may be substantially aligned (e.g. parallel) with the horizontal plane of the solar module. Alternatively, some or all of the solar cells may be arranged in a shingle-like or shingle arrangement. Thus, the first solar cell may be arranged to at least partially overlap the second solar cell.

[0090] Typically, one or more solar cells in a module are electrically connected to each other in series or in parallel. In some arrangements, all solar cells in a module may be connected in series. In other configurations, a selected number of solar cells may be connected in series as a solar cell string. Multiple solar cell strings may be connected in parallel through one or more bypass diodes. Multiple possible solar cell configurations are well known in the art, and any suitable configuration may be used in the present modules.

[0091] An encapsulant may be configured to provide encapsulation of one or more solar cells. In general, this may be defined as a means of physically protecting the solar cells from external environmental conditions, which may include humidity, moisture, rain, and ultraviolet (UV) radiation. The encapsulant may also be configured to hold the components of a solar module (e.g., solar cells) in place within the module. The encapsulant may be configured to protect the solar cells from mechanical stresses, such as twisting or bending, and low-energy impacts caused by hail or errant projectiles.

[0092] The encapsulant may comprise a front encapsulant layer and a back encapsulant layer. The front encapsulant layer may be disposed directly or indirectly on the front side of the solar cell. The back encapsulant layer may be disposed directly or indirectly on the back side of the solar cell. The front encapsulant layer and the back encapsulant layer may be formed of the same material. Alternatively, the front encapsulant layer and the back encapsulant layer may be formed of different materials. The material of the front and / or back encapsulant layer may be selected from ethylene vinyl acetate (EVA), polyolefin elastomer (POE) material, or any other suitable encapsulant material known in the art.

[0093] The encapsulant may have a thickness that is significantly less than its length and width. The lateral extent of the encapsulant may be substantially the same as the lateral extent of the backing sheet of the module.

[0094] The outer casing of the solar module may include a front sheet or plate disposed on a front side of the solar module and a back sheet or plate disposed on a back side of the solar module. The front sheet may be formed of a transparent material such as glass. The back sheet may be formed of an insulating material, for example a polymeric insulating material such as polyethylene terephthalate (PET).

[0095] The solar module may include a frame, or one or more frame elements. The frame may be configured to hold the components of the solar module in place and provide a seal around the outer casing (e.g., the front sheet and the back sheet). If the solar module includes a front sheet and a back sheet, the frame may apply a compressive force between the front sheet and the back sheet to hold the components of the solar module in place, as would be readily understood by one of ordinary skill in the art.

[0096] Solar modules may be evaluated by one or more performance metrics, including, but not limited to, short circuit current (ISC), open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (PCE). Solar modules according to the present invention have higher module V compared to modules with cells not according to the present invention. oc , and / or may demonstrate high modular fill factor % (FF%).

[0097] Those skilled in the art will understand that, unless mutually exclusive, a feature or parameter described in connection with any one of the above embodiments may also be applied to any other embodiment. Further, unless mutually exclusive, any feature or parameter described herein may be applied to any embodiment and / or combined with any other feature or parameter described herein. [Brief description of the drawings]

[0098] BRIEF DESCRIPTION OF THE DRAWINGS Embodiments and experiments illustrating the principles of the present invention will now be discussed with reference to the accompanying drawings.

[0099] [Figure 1] 1 shows a schematic cross section through a heterojunction solar cell according to the present invention. [Figure 2a] 1 is a graph (1) showing a series of possible production process sequences for the manufacture of solar cells according to the present invention. [Figure 2b] Graph (2) showing a series of possible production process sequences for the manufacture of solar cells according to the present invention. [Figure 2c] Graph (3) showing a series of possible production process sequences for the manufacture of solar cells according to the invention. [Figure 2d] Graph (4) showing a series of possible production process sequences for the manufacture of solar cells according to the invention. [Figure 2e] Graph (5) showing a series of possible production process sequences for the manufacture of solar cells according to the invention. [Diagram 3] 1 shows a box plot of the module Voc ("maxvolt") of samples according to the invention (T3B-00246 group, T3B-00247 group, T3B-00248 group, and T3B-00249 group) compared to reference samples (T3B-00244 group, T3B-00245 group). [Figure 4] Box plots of module FF% ("Fillfactormaxval") of samples according to the invention (T3B-00246 group, T3B-00247 group, T3B-00248 group, and T3B-00249 group) compared to reference samples (T3B-00244 group, T3B-00245 group). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0100] Aspects and embodiments of the present invention will now be discussed with reference to the accompanying drawings. Further aspects and embodiments will be apparent to those skilled in the art. All documents mentioned in this specification are incorporated herein by reference.

[0101] In the drawings, the relative dimensions of the various elements of the solar module are shown diagrammatically and not to scale. For example, thicknesses of sheets, layers, films, etc. are exaggerated for clarity. Furthermore, when an element such as a layer, film, region, or substrate is referred to or illustrated as being "on" or "adjacent" another element, it will be understood that it may be directly on the other element, or that intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly adjacent" another element, there are no intervening elements present.

[0102] Figure 1 shows a schematic cross section through a heterojunction solar cell 100 according to the present invention. The arrow at the top of Figure 1 indicates the direction of solar radiation incident on the solar cell assembly in use. The solar cell has a front surface 2, on which light is incident in normal use, and a back surface 4 opposite the front surface 2. The front surface is configured to face substantially towards the sun in use.

[0103] A solar cell comprises a generally symmetrical layered structure. The "base" of the structure is a crystalline silicon wafer 6, also referred to herein as a c-Si layer or c-Si substrate. The c-Si substrate 6 is formed from an n-type monocrystalline silicon wafer. It is a textured layer.

[0104] There is a first collector layer 8 disposed on the front side of the substrate 6, and a second collector layer 10 disposed on the back side of the substrate 6. The first collector layer 8 is formed from p-type hydrogenated amorphous silicon (a-Si:H(p)) and also forms a hole collector layer that couples to create a charge separation field at the pn junction. The second collector layer 10 is formed from n-type amorphous hydrogenated silicon (a-Si:H(n)) and also forms an electron collector layer configured to selectively sort or extract charge carriers from the substrate 6.

[0105] Passivation layers 12a, 12b are disposed between the substrate 6 and each of the first collector layer 8 and the second collector layer 10. The passivation layers 12a, 12b are formed from intrinsic amorphous hydrogenated silicon (a-Si).

[0106] The solar cell further comprises a TCO layer 14a, 14b formed on each of the front and back hydrogenated amorphous silicon (a-Si:H) layers structured by the passivation and collector layers. These TCO layers are made of indium tin oxide (ITO). They may provide some anti-reflection functionality.

[0107] The solar cell further includes front and back electrodes 16 a , 16 b formed on the front and back TCO layers, respectively, and configured to extract photo-generated charge carriers from the solar cell 100 .

[0108] At least one edge of the solar cell is a cut edge 18, i.e., an edge that is formed during a cutting process during the manufacture of the solar cell. During manufacture, this cut edge is subjected to a treatment process that includes a carrier injection step.

[0109] The sequence of the manufacturing method according to the invention will now be described in relation to Figures 2a-e, which graphically show a sequence of possible production processes for the manufacture of solar cells according to the invention.

[0110] Each of these production processes includes the following steps in various orders: - Providing a c-Si substrate (Step 201) - Texturing the c-Si substrate (step 202) (Note: in some methods it may not be necessary to perform the texturing step. For example, the c-Si substrate may be provided as a pre-textured substrate. This step is therefore optional) - PECVD deposition of front and back hydrogenated amorphous silicon (a-Si:H) layers on the front and back sides, respectively, of a crystalline silicon wafer, comprising the following sub-steps: Then, a sub-step of depositing a-Si:H(i) layer by PECVD (step 203) A sub-step of depositing a pre-a-Si:H(i / n) layer by PECVD (step 204) Then, a substep of PECVD deposition of an a-Si:H(p) layer (step (205) - depositing front and back transparent conductive oxide (TCO) layers on the front and back hydrogenated amorphous silicon (a-Si:H) layers, respectively, comprising the following sub-steps: A substep of PVD deposition of a pre-TCO layer (step 206) A sub-step of PVD deposition of a post-TCO layer (step 207) - Cutting the battery in half with a laser (step 208) - carrying out metallization to form one or more metal electrodes on the front and / or back TCO layer, comprising the following sub-steps: ○ Sub-step of printing Ag fingers (step 209) A sub-step of curing the layered structure at less than 250° C. (step 210) - A sub-step of performing a carrier injection process (step 211)

[0111] As can be seen from these process sequences, the step of cutting the solar cell can be performed at any time from after providing a c-Si substrate (step 201) to after performing metallization steps (steps 209, 210) to form one or more metal electrodes on the front and / or back TCO layers.

[0112] The step of performing the carrier injection treatment can be performed at any time after PECVD deposition of the front and back hydrogenated amorphous silicon (a-Si:H) layers on the front and back sides, respectively, of the crystalline silicon wafer (steps 203, 204, 205) and after the battery disconnection is performed (step 208), but preferably it is performed as the final step of the production process, as shown in each of Figures 2a-e.

[0113] Some experimental examples and results will now be described.

[0114] Effect of carrier injection treatment on measured photoluminescence intensity (PL intensity) Several samples (12) were treated according to the method of the present invention to examine the effect of the treatment on the measured photoluminescence intensity. Specifically, these samples were subjected to a charge-based carrier injection treatment. Samples 1-12, which had previously been subjected to a cutting process (i.e., cells cut in half), were treated and compared to reference samples 13 and 14, which had not previously been subjected to a cutting process.

[0115] The process was carried out as follows:

[0116] A number of batteries were stacked together in a coin stack and loaded into a magazine. The batteries were stacked in series, with the negative side of one battery in contact with the positive side of the adjacent battery and vice versa. The magazine was then processed using a charge-based carrier injection process using an electronic injector (Changzhou Shichuang Energy Co Ltd. model: Anti-LID6000) with up to eight process units.

[0117] The battery stack was sandwiched between two metal plates in the magazine and the whole block was lifted by the bottom electrode of each process unit, then the top electrode was contacted to the block to complete a circuit. A voltage was then applied by the power supply unit of each process unit, allowing a current to flow. The amount of current was chosen as a parameter - see the table below for details of the selected applied currents.

[0118] A set point temperature was also selected for each treatment, as shown in the table below, which is the temperature at which the battery was maintained during the treatment. This temperature maintenance was achieved by detecting the temperature of the battery using an infrared thermometer, and activating the delivery of compressed dry air (CDA) to the battery as a cooling mechanism when the battery was detected to be at a temperature higher than the set point temperature. In this manner, the temperature of the battery can be maintained substantially constant at the set point temperature throughout the treatment.

[0119] Samples 1-12 were divided into four groups, each containing three samples, namely, groups G3, G4, G5, and G6. The carrier injection process parameters for each group were varied as described in the table below. Specifically, the process duration, process temperature, and applied current during the process were varied.

[0120] The photoluminescence intensity of each sample was then measured using a BT Imaging Pty Ltd. Device, model: LIS-R1. The photoluminescence intensity was determined using the "PL open circuit image measurement" mode with the following settings: exposure time = 0.2 seconds, illumination area = "large", light source set point = 0.1 sun. [Table 1]

[0121] From this data, it can be seen that the average increase in PL intensity resulting from carrier injection treatment of all samples according to the invention, (632.3+273.9+497.9-35.7) / 4=342.1, was greater than the corresponding increase in PL intensity of the reference sample, 258.6. No treatment was performed on intact battery samples 13 and 14, but a slight increase in PL intensity was observed between the first and second measurements. This slight increase is assumed to be simply the result of measurement drift over time for the untreated samples.

[0122] It should be noted that samples 3, 11, and 12 showed poor performance after processing. It is hypothesized that these poor results were observed due to possible thermal damage during the carrier injection process due to the stacking arrangement of the cells during processing. Indeed, if these samples are excluded from the results and the average increase in PL intensity is calculated based only on samples 1, 2, 4, 5, 6, 7, 8, 9, and 10, the average increase in PL intensity is 558, more than twice the corresponding increase in PL intensity of the standard sample.

[0123] The largest increase in PL intensity was observed for samples 1 and 2, which underwent four separate electron injection treatment steps of 300 seconds each, at respective applied currents of 5.5 / 5.8 / 5.8 / 5.8 A and at a treatment temperature of 127.5° C. Therefore, these conditions may be the preferred treatment conditions for providing an increase in the PL intensity of solar cells.

[0124] Module V oc and the effect of carrier injection treatment on FF% The current-voltage electrical characteristics of modules incorporating batteries processed according to the present invention are also measured using a module V oc The effect of cell treatment on the % FF was investigated to determine. Test modules were constructed using cells that underwent the same treatments as Samples 1-12. These were compared to comparative test modules constructed using reference cells that had not been subjected to the cutting process.

[0125] The (non-reference) modules tested were divided into four groups of three ("Shoporders") based on the type of processing performed on the cells contained in each module (see Table 2 below). The carrier injection processing parameters for each group were varied as described in the table below. Specifically, the processing duration, processing temperature, and applied current during processing were varied. The reference modules tested are shown as "Shoporders" T3B-00244 and T3B-00245 (see Table 2 below).

[0126] All modules were then measured for module VOC and module FF% using a commercially available solar simulator machine. To measure module VOC and module FF%, a probe from the machine is placed in contact with the module contacts. The solar simulator machine then generates a flash of light that simulates the solar radiation spectrum received at the Earth's surface. The modules generate a current from the light, and then the module VOC and module FF% are output by the commercially available solar simulator. [Table 2] Table 2: Module V of Samples 1-12 (T3B-00246, T3B-00247, T3B-00248, and T3B-00249) versus test modules constructed using batteries that underwent the same processing as the comparison test modules (T3B-00244, T3B-00245). oc and data showing FF%

[0127] The data are also presented as a series of box plots in Figures 3 and 4. The mean module V oc It can be seen that the average FF% is better for all module groups where the cells within the modules have previously been subjected to the cutting process (shoporders T3B-00246, T3B-00247, T3B-00248, and T3B-00249) compared to modules containing cells that have not previously been subjected to the cutting process (shoporders T3B-00244, T3B-00245), again demonstrating that the solar cell treatment according to the invention results in surprisingly improved technical performance.

[0128] The highest average module V for group T3B-00249, which was subjected to four separate electron injection treatment steps of 600 seconds each at applied currents of 4.3 / 6 / 6 / 6A, respectively, and at a treatment temperature of 127.5°C. oc and FF% were observed. These conditions therefore correspond to the module V of the module incorporating the solar cell according to the invention. ocand may be preferred processing conditions to provide an increase in FF%.

[0129] The features disclosed in the foregoing specification, or the following claims, or the accompanying drawings, may be utilized separately or in any combination of such features, as appropriate to realize the invention in its diverse forms, in terms of their specific form, or means for performing a disclosed function, or a method or process for obtaining a disclosed result.

[0130] While the present invention has been described in conjunction with the exemplary embodiments set forth above, many equivalent modifications and variations will be apparent to those skilled in the art given this disclosure. Accordingly, the exemplary embodiments of the invention set forth above are considered to be illustrative rather than limiting. Various changes to the described embodiments can be made without departing from the spirit and scope of the invention.

[0131] For the avoidance of any doubt, any theoretical explanations provided herein are provided for the purpose of enhancing the understanding of the reader, and the inventors do not wish to be bound by any of these theoretical explanations.

[0132] Any section headings used herein are for organizational purposes only and are not to be construed as limiting the subject matter described.

[0133] Unless the context requires otherwise, throughout this specification, including the claims which follow, the words "comprises" and "includes," and variations such as "comprises," "comprising," and "comprising," are understood to imply the inclusion of a stated integer or step or group of integers or steps, but not the exclusion of any other integer or step or group of integers or steps.

[0134] It should be noted that, as used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Ranges may be expressed herein as from "about" one particular value and / or to "about" another particular value. When such a range is expressed, another embodiment includes from the one particular value and / or to the other particular value. Similarly, when values ​​are expressed as approximations by use of the antecedent "about," it is understood that the particular value forms another embodiment. In connection with numerical values, the term "about" is optional and may mean, for example, + / - 10%.

Claims

1. 1. A method for treating at least one cut solar cell, comprising the steps of: providing the at least one solar cell, the cell having previously been subjected to a cutting process; and performing a carrier injection process on at least the cut end of the battery.

2. The method of claim 1 , wherein the solar cell is a heterojunction solar cell.

3. The method of claim 1 or 2, wherein the carrier injection process comprises at least one process selected from a light-based carrier injection process or a charge-based carrier injection process.

4. The carrier injection process includes: i. a halogen lamp treatment comprising exposing at least the cut ends of the cells to light emitted from a halogen lamp having a luminous flux (lm) in the range of 10,000 lm to 60,000 lm; ii. LED lamp treatment comprising exposing at least the cut end of the cell to light emitted from an LED lamp at a light intensity of 80-180 suns, where 1 sun corresponds to standard lighting at AM 1.5; and / or iii. a laser treatment comprising exposing at least the cut end of the cell to light emitted from a laser having a designated predetermined wavelength and a power in the range of 1000-4000 W.

5. 5. The method according to claim 3 or 4, wherein the carrier injection process is a light-based carrier injection process and the distance between the cell being treated and the light source used in the process is in the range of 5 to 40 cm.

6. The method of claim 3 , wherein the carrier injection process comprises a charge-based carrier injection process comprising applying a voltage to the at least one cut solar cell to cause a current to flow.

7. The method of claim 6, wherein the charge-based carrier injection process is carried out at an applied current of 4-10 A.

8. 10. A method according to any one of the preceding claims, wherein the carrier injection process comprises a number of separate carrier injection process steps.

9. The method of claim 8 , wherein one or more parameters of the carrier injection process are varied between the separate carrier injection process steps.

10. 10. A method according to any one of the preceding claims, wherein the treatment is carried out for a total time between 5 seconds and 1 hour.

11. 2. A method according to any one of the preceding claims, wherein the carrier injection treatment is carried out such that the cell temperature is in the range of 100°C to 300°C during the carrier injection treatment.

12. 10. The method according to any one of the preceding claims, wherein a plurality of cut solar cells are processed simultaneously.

13. A method for manufacturing a solar cell, comprising the steps of: (a) providing a crystalline silicon (c-Si) wafer; (b) depositing front and back amorphous silicon (a-Si) layers on the front and back sides of the crystalline silicon wafer, respectively; (c) depositing front and back transparent conductive oxide (TCO) layers on said front and back amorphous silicon (a-Si) layers, respectively; (d) performing metallization to form one or more metal electrodes on said front and / or back TCO layers; (e) cutting the solar cell; (f) performing a carrier injection process on at least the cut end of the battery; The method, wherein the step (e) of cutting the solar cell is performed at any time after step (a) and after step (d), and the step (f) of performing a carrier injection process on at least the cut end of the cell is performed at any time after both steps (b) and (e) have been performed.

14. 14. The method of claim 13, wherein step (f) of performing a carrier injection treatment on at least the cut end of the battery is performed after each of steps (a)-(d) is performed.

15. 15. The method of claim 13 or 14, wherein the carrier injection process comprises at least one process selected from a light-based carrier injection process or a charge-based carrier injection process.

16. said step (b) of depositing front and back amorphous silicon (a-Si) layers on the front and back sides, respectively, of said crystalline silicon wafer; (i) depositing front and back intrinsic amorphous silicon (a-Si(i)) layers on the front and back sides, respectively, of the crystalline silicon wafer; (ii) depositing a p-doped or n-doped hydrogenated amorphous silicon (a-Si(n), a-Si(p)) layer on each of the front and back intrinsic amorphous silicon (a-Si(i)) layers.

17. 17. The method of any one of claims 13 to 16, wherein the step (b) of depositing front and back amorphous silicon (a-Si) layers on the front and back sides, respectively, of the crystalline silicon wafer is performed using plasma enhanced chemical vapor deposition (PECVD).

18. 18. The method according to any one of claims 13 to 17, wherein the step (c) of depositing front and back transparent conductive oxide (TCO) layers on the front and back amorphous silicon (a-Si) layers, respectively, is carried out using physical vapor deposition (PVD).

19. 19. The method according to any one of claims 13 to 18, wherein the step (d) of performing metallization to form one or more metal electrodes on the front and / or back TCO layer comprises the sub-steps of applying a metallization material to the front and / or back TCO layer and performing a heat treatment to form the one or more metal electrodes from the metallization material.

20. The method according to any one of claims 13 to 19, wherein the step (e) of cutting the solar cells is performed by a laser-based or laser-assisted cutting process.

21. A cut solar cell which has been subjected to the treatment method according to any one of claims 1 to 12 or produced according to the method according to any one of claims 13 to 20.

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