Pumping and processing device and method thereof

Abstract

A pump set (2) is fluidly connected in a flow direction (F1) of the pumped gas downstream of the process chamber (101) and upstream of the gas processing device (3), said pump set (2) comprising a Roots secondary vacuum pump (5) mounted in series upstream of a primary vacuum pump (4), said pump set (2) further comprising a control unit (17) configured to control an output parameter of said pump set (2) and / or said gas processing device (3) as a function of an input parameter, said input parameter being the power consumed by a motor (M2) of the Roots secondary vacuum pump (5).

Description

[Technical field]

[0001] The present invention relates to a pump set that is fluidly connected, in the direction of flow of the pumped gas, downstream of a production facility and upstream of a gas processing device. The present invention also relates to a pumping and processing device and a processing method thereof. [Background technology]

[0002] In the semiconductor, flat screen or photovoltaic manufacturing industries, gases are used in the manufacturing processes, and these gases, after passing through a primary vacuum pump, are generally treated in a gas treatment device. Some of these methods are said to be hazardous because the gases carried in the vacuum lines are flammable and / or explosive. Examples of these gases include hydrogen, silane, TEOS, and hydrides.

[0003] In addition to these dangerous gas species, there may also be deposits of reduced, i.e. non-oxidized, solid species in the vacuum lines, such as silicon dust or polymers of polysilanes. These deposits can build up over time and promote the development of further hazardous conditions. In fact, some non-oxidized deposits are highly flammable. These deposits can be ignited, among other things, by, for example, a sudden strong pumping of gas, or simply by an operator exposing the pipeline or the vacuum pump to air during maintenance work. Summary of the Invention [Problem to be solved by the invention]

[0004] Some explosions can be particularly destructive due to the very large energy released. This is especially true in the case of multiple explosions in a stepped sequence. The first explosion is initiated by flammable gases. This explosion may cause suspended deposits of reduced solid species in the pipeline. These flammable solid deposits are then blown up by the shock wave of the explosion, one after the other, in a "super explosion". The risk of this explosion causing damage to personnel and equipment is therefore very high.

[0005] The method currently used to address this problem is to continuously dilute the pumped gas with a neutral gas, usually nitrogen. The flow rate of this neutral gas is determined to be able to handle the most adverse pumping conditions with an additional safety margin. Therefore, in most cases, this flow rate is significantly over-designed, which has many drawbacks. First, the injection of nitrogen into the vacuum lines incurs additional costs not only associated with gas consumption, but also with the energy consumption of the vacuum pumps, vacuum line heating devices, and gas handling equipment.

[0006] Furthermore, the cooling of the vacuum lines caused by the dilution of the gas gives rise to other drawbacks, in particular due to the cost and risk of failure of the elements of the heating device. This large input of neutral gas also requires larger gas treatment equipment and primary pumping systems. Dilute nitrogen also causes the formation of nitrogen oxides or "NOx" (such as NO2) in gas treatment equipment. Nitrogen oxides are toxic and constitute air pollutants and must be treated.

[0007] Moreover, regardless of the amount of dilution gas injected, the operating parameters of the gas pumping and processing equipment are not always optimized for the amount of gas that needs to be processed. In fact, the information about the process gas injected into the process chamber is not reliably and completely accessible to be used downstream by the gas pumping and processing equipment. Usually, it is necessary to close an electric switch that can only obtain information about the introduction of gas into the process chamber. Moreover, this information is not always accessible in all manufacturing facilities. In fact, manufacturing steps in process chambers where less gas needs to be processed downstream may mobilize excessively large dilution and processing means, resulting in excessive energy consumption.

[0008] One of the aims of the present invention is, inter alia, to reduce the energy consumption of gas pumps and / or processing equipment. [Means for solving the problem]

[0009] In fact, the subject of the invention is a pump set fluidly connected in the direction of flow of the pumped gas downstream of a process chamber and upstream of a gas processing device, The pump set comprises: A primary vacuum pump; a Roots secondary vacuum pump mounted in series upstream of the primary vacuum pump and including a motor; The pump set comprises a control unit configured to control an output parameter of the pump set and / or the gas processing device as a function of an input parameter, the input parameter being the power consumed by the motor of the Roots secondary vacuum pump.

[0010] The power consumed by the motor of the Roots secondary vacuum pump allows the amount of gas processed by the gas processing device to be estimated, and from there the output parameters of the pump set and / or the gas processing device to be inferred. Knowing even roughly the amount of gas processed by the gas processing device allows the output parameters of the pump set or the gas processing device to be adapted to the pumping conditions. This solution can be implemented by pumping and processing equipment that is autonomous with respect to said manufacturing equipment item, i.e. without communication with said manufacturing equipment item.

[0011] The pump set may further include one or more of the features described below, either alone or in combination. The pump set may include a purge device configured to inject a purge gas into a flow path of the pumped gas between an output of the process chamber and an input of the gas processing device. The purge system may be configured to inject a purge gas into at least one pump stage of the primary vacuum pump. The purge device may include a controllable flow controller, including a variable opening control valve or an on / off controllable regulator valve.

[0012] According to an exemplary embodiment, the output parameter of the pump set is the flow rate of the purge gas injected by the purge device. The power consumed by the motor of the Roots secondary vacuum pump allows the amount of gas processed by the gas processing device to be estimated, from which the flow rate of the injected purge gas can be inferred. By knowing, even roughly, the amount of gas processed by the gas processing device, the flow rate of the purge gas injected by the purge device can be adapted to the pumping conditions. In this way, it is possible to limit the consumption of the purge gas, thereby reducing the energy consumption of the pump set and at the same time reducing the energy consumption of the gas treatment device, thereby minimizing or even eliminating the production of nitrogen oxides in the gas treatment device.

[0013] According to an exemplary embodiment, in the case of a first operating state of the Roots secondary vacuum pump with a first power (input parameter), the output parameter, here the flow rate of injected purge gas, is greater than in the case of a second operating state of the Roots secondary vacuum pump with a second power that is higher than the first power. For example, the second operating state corresponds to a cleaning step in which the flow rate of gas processed by the processing equipment is less than that of the deposition step, especially when a purge gas is injected downstream of the Roots vacuum pump, and the cleaning gas (NF3), which is already dissolved, has less need to be processed by the gas processing equipment. The first operating state, with low power, corresponds to the deposition step.

[0014] Increasing the flow rate of purge gas injected by the purge device at low values ​​of the input parameters facilitates dilution and driving of the gas in the gas flow path during the deposition step. By reducing the flow rate of purge gas injected by the purge device at high values ​​of the input parameters, the consumption of purge gas and the energy consumption of the pump set and gas treatment device is limited and the formation of nitrogen oxides is minimized. The purge gas flow rate in the first operating state is, for example, at least 20% higher than the purge gas flow rate in the second operating state, and the purge gas flow rate in the second operating state is, for example, zero, but is injected into the bearings of the primary vacuum pump to protect the rolling bearings and sealing devices at the ends of the primary vacuum pump.

[0015] The control unit can be configured to control multiple flow rates of purge gas injected by the purge device that correspond to multiple power ranges consumed by the motor of the Roots secondary vacuum pump, each power range corresponding to a distinct recipe that can be executed in the process chamber. The purge device may include a purge gas heating device. According to an exemplary embodiment, the output parameter of the pump set is the power of the purge gas heating device.

[0016] According to an exemplary embodiment, in the case of a first operating state of the Roots secondary vacuum pump with a first power (input parameter), the output parameter, here the power of the heating device, is higher than in the case of a second operating state of the Roots secondary vacuum pump with a second power which is higher than the first power. Increasing the power of the heater at low values ​​of the input parameters increases the temperature of the purge gas during the deposition step, facilitating dilution and driving of the gas in the gas flow path. By reducing the power of the heating device at high values ​​of the input parameters, excessive power consumption of the heating device is avoided. It is thus possible to adapt the power consumption of the heating of the vacuum line to the flow rate of the gas treated by the gas treatment device, thus avoiding excessive consumption.

[0017] The power of the heating device in the first operating state is, for example, at least 20% higher than the second power of the heating device in the second operating state, which may be zero. The control unit can further be configured to control multiple powers of the heating device corresponding to multiple power ranges consumed by the motor of the Roots secondary vacuum pump, each power range corresponding to a distinct recipe that can be executed in the process chamber, in this way the heating of the vacuum line can be precisely adapted to the pumping situation.

[0018] Another subject of the invention is a pumping and treatment device comprising at least one pump set as described above and at least one gas treatment device comprising a treatment unit and / or a scrubber and / or a chemisorption and / or physisorption cartridge, said treatment unit being, for example, equipped with a combustor and / or an electrical system and / or a plasma generating device.

[0019] Where the treatment device includes a combustor, the combustor may, for example, include oxidizer and fuel injectors configured to inject oxidizer and fuel into the flow path of the pumped gas, and the output parameters of the gas treatment device may, for example, be the flow rates of oxidizer and fuel injected by the oxidizer and fuel injectors. For example, in the case of a first operating state of the Roots secondary vacuum pump with a first power (input parameter), the output parameters, here the flow rates of oxidizer and fuel injected by the oxidizer and fuel injectors, are greater than in the case of a second operating state of the Roots secondary vacuum pump with a second power that is higher than the first power.

[0020] Increasing the flow rates of oxidant and fuel injected into the combustor at low values ​​of the input parameters increases the flame temperature of the combustor during the deposition step, facilitating the processing of the gases, particularly by promoting the conversion of process gas residues into soluble substances. By reducing the flow rates of oxidant and fuel injected into the combustor at high values ​​of the input parameters, the flame temperature during the cleaning step is reduced and oxidant and fuel can be saved, so that the flow rates of oxidant and fuel can be adapted to the flow rate of the gas treated by the gas treatment device to avoid excessive consumption. The flow rates of the oxidant and fuel in the first operating state are, for example, at least 20% greater than the flow rates of the oxidant and fuel in the second operating state.

[0021] If the treatment unit comprises an electrical system and / or a plasma generating device, the output parameter of the gas treatment device is the power of the electrical system or the plasma generating device. For example, in the case of a first operating state of the Roots secondary vacuum pump with a first power (input parameter), the output parameter (here the power of the electrical system or the plasma generating device) is greater than in the case of a second operating state of the Roots secondary vacuum pump with a second power that is higher than the first power.

[0022] By increasing the power of the electrical system or plasma generating device when the input parameter value is low, the power of the plasma light is increased, which in turn facilitates the processing of the gas, in particular by facilitating the conversion of process gas residues into soluble substances. By reducing the power of the electrical system or the plasma generating device at high values ​​of the input parameters, excessive power consumption of the electrical system or the plasma generating device is avoided. Thus, it is possible to adapt the power consumption of the gas processing device to the flow rate of the gas to be processed, thereby avoiding excessive consumption.

[0023] The power of the electrical system or plasma generating device in the first operating state is, for example, at least 20% greater than the power of the electrical system or plasma generating device in the second operating state.

[0024] The pumping and processing device may include a connection device configured to direct gas pumped by the pump set to a processing unit of the gas processing device, a scrubber of the gas processing device, a central scrubber, or another gas processing device, and the output parameter of the gas processing device is the orientation of the connection device. The connection device comprises, for example, a three-way or four-way valve which can be controlled by the control unit. For example, the control unit is configured to direct gas pumped by the pump set to the gas processing device when in a first operating state of the Roots secondary vacuum pump at a first power, and to direct gas pumped by the pump set to a scrubber of the gas processing device, a central scrubber, or another gas processing device when in a second operating state of the Roots secondary vacuum pump at a second power higher than the first power.

[0025] The cleaning gases used during the cleaning step are sufficiently soluble that they do not need to be pre-treated by a treatment unit, after which the gases exiting the pump set can be conveyed directly to a scrubber, central scrubber, or another gas treatment device, bypassing the treatment unit.

[0026] The control unit can be further configured to control the direction of gas pumped by the pump set according to a number of power ranges consumed by the motor of the Roots secondary vacuum pump, each power range corresponding to a distinct recipe that can be executed in the process chamber, such that the direction of gas at the output of the pump set can be precisely adapted to different pumping conditions. The control unit may be configured to communicate with a central unit of a manufacturing plant, in particular for manufacturing semiconductor devices or photovoltaic panels or flat screens, including manufacturing equipment items and pumping and processing equipment fluidly connected to the manufacturing equipment items.

[0027] Another subject of the invention is a method for pumping and treating gases by means of the pumping and treatment device described above, characterized in that the output parameters of the pump set and / or the gas treatment device are controlled as a function of an input parameter, the input parameter being the power consumed by the motor of the Roots secondary vacuum pump. The gas pumping and treatment methods can be performed in a process chamber in which a recipe is executed that performs alternating deposition and cleaning steps. [Brief description of the drawings]

[0028] [Figure 1] 1 is a schematic diagram of a manufacturing facility connected to the gas pumping and processing apparatus of the present invention; [Diagram 2] FIG. 2 is a schematic diagram of the pumping and processing apparatus of FIG. 1; [Diagram 3] 1 is a graph of the power consumed by the Roots secondary vacuum pump (in watts) as a function of the flow rate of gas pumped by the Roots secondary vacuum pump (in slm (1 slm is equal to 1.69 Pa.m3 / s)) for all recipes executable in the process chamber. [Figure 4] FIG. 4 is a schematic diagram showing an alternative embodiment of the purging system of the pumping and processing apparatus of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] Other characteristics and advantages of the invention will become apparent from the following description, given by way of non-limiting example in the light of the accompanying drawings, in which identical elements are provided with the same reference numbers, in which: The following embodiments are examples. Although the description refers to one or more embodiments, this does not necessarily mean that each reference relates to the same embodiment or that a feature applies only to one embodiment. Features of one of the different embodiments can also be combined or exchanged to provide other embodiments.

[0030] In the following, "upstream" defines an element that is located before another element with respect to the flow direction F1 of the pumped gas, while "downstream" defines an element that is located after another element with respect to the flow direction F1 of the pumped gas. The primary vacuum pump is a positive displacement vacuum pump configured to draw, transport and exhaust the gas to be pumped at atmospheric pressure using two rotors. The primary vacuum pump is configured to exhaust at atmospheric pressure or at pressures higher than atmospheric pressure, in particular up to 1200 mbar (120000 PA). The primary vacuum pump is also configured to start at atmospheric pressure. The primary vacuum pump comprises two rotors which are driven in rotation by at least one motor M1 of the primary vacuum pump. The primary vacuum pump is multi-stage, typically comprising 3 to 10 pump stages mounted in series.

[0031] A Roots secondary vacuum pump (also called a "Roots blower" or Roots compressor) is a positive displacement vacuum pump configured to use two Roots rotors to draw in, transport, and then discharge gas for pumping. The Roots secondary vacuum pump is mounted in series upstream of the primary vacuum pump. The Roots secondary vacuum pump has two rotors that are driven in rotation by one motor M2 of the Roots secondary vacuum pump.The Roots secondary vacuum pump has one to three pump stages mounted in series. Roots secondary vacuum pumps are distinguished from primary vacuum pumps mainly because of the larger pump stage size, larger pumping capacity, larger play tolerance, and the fact that Roots vacuum pumps cannot discharge at atmospheric pressure and must be installed in series upstream of the primary vacuum pump.

[0032] A manufacturing plant, in particular a plant for manufacturing semiconductor devices or photovoltaic panels or flat screens, comprises a manufacturing facility 100 and a pumping and processing device 1 fluidly connected to said manufacturing facility 100 . A facility 100 for manufacturing semiconductor devices or photovoltaic panels or flat screens comprises one or more process chambers 101 fluidly connected to one or more pumping and processing equipment 1 (see FIG. 1 ), which accommodate one or more substrates 102 for the manufacture of said devices.

[0033] The process chamber 101 of the manufacturing facility 100 is implemented with recipes 103 for controlling the gases injected into the process chamber 101. In particular, there are recipes 103 for alternating deposition steps with a precursor process gas of the TEOS type and cleaning steps with a cleaning gas such as NF3, or for waiting for the loading or unloading of a substrate 102. These recipes 103 contain a sequence of steps to be performed in the process chamber 101, defining the gas nature, flow rates and pressures as well as the step durations.

[0034] The pumping and processing device 1 comprises at least one pump set 2 and at least one gas processing device 3. The pump set 2 is fluidly connected to the process chamber 101 downstream of the process chamber 101 and is fluidly connected to the gas processing device 3 upstream of the process chamber 101 in the direction of flow of the pumped gases, which is represented diagrammatically by the arrow F1 in FIG. A single and same gas treatment device 3 can also be connected to several pump sets 2 .

[0035] An example of a pumping and processing apparatus 1 is shown in more detail in Figure 2. The pump set 2 comprises a primary vacuum pump 4 and a Roots secondary vacuum pump 5 mounted in series upstream of the primary vacuum pump 4 in the direction of flow of the gas being pumped. The Roots secondary vacuum pump 5 comprises a motor M2 arranged to drive two rotors of the Roots secondary vacuum pump 5 in rotation. The pump set 2 may also comprise at least one turbomolecular vacuum pump arranged upstream of and in series with the Roots secondary vacuum pump 5 in the flow direction F1 of the pumped gas, thereby being interposed between the process chamber 101 and the Roots secondary vacuum pump 5. The gas treatment device 3 is configured to treat the gas pumped by the pump set 2 at atmospheric pressure.

[0036] As is well known, the gas treatment device 3 comprises a treatment unit 6 and / or a scrubber 8 and / or a chemisorption and / or physisorption cartridge. The treatment unit 6 comprises a combustor 7 arranged for example to generate a thermal reaction at high temperature by combustion of hydrocarbons and / or an electrical system arranged for generating a thermal reaction at high temperature by heating electrical resistors and / or a plasma generator.

[0037] According to the exemplary embodiment shown in FIG. 2, the gas treatment device 3 comprises a combustor 7 and a scrubber 8 arranged in series downstream of the combustor 7 in the flow direction F1 of the pumped gas. The combustor 7 includes an oxidizer and fuel injector 11 configured to inject an oxidizer, such as oxygen or air, and a fuel, such as methane, into the flow path of the pumped gas between the output of the production facility 100 and the combustor 7, and in particular into the combustion chamber 12 of the combustor 7. The oxidizer and fuel injection device 11 comprises, for example, a first controllable flow controller 13 configured to control the injection of the oxidizer and a second controllable flow controller 14 configured to control the injection of the fuel. The oxidizer and fuel injected into the combustion chamber 12 of the combustor 7 combust and allow the pumped gases to rise to very high temperatures, thus activating the formation of new chemically reactive and soluble substances, which are then captured by the scrubber 8.

[0038] At the output of the gas treatment device 3, the gas can be discharged to the atmosphere or to a central scrubber of the production plant. The pump set 2 may include a purge device 15 configured to inject a purge gas into the flow path of the pumped gas between the output of the process chamber 101 and the input of the gas processing device 3 . The purge gas may be, for example, a neutral gas such as nitrogen or argon, or even dry air.

[0039] The purge device 15 is configured, for example, to inject purge gas into the input of the pump set 2, i.e. the input of the Roots secondary vacuum pump 5, and / or into the pump set 2 (see FIG. 1). For example, it is configured to inject purge gas into at least one pump stage T1-T5 of the primary vacuum pump 4 and / or into the input of the gas treatment device 3, as will be described below with reference to the variant embodiment of FIG.

[0040] To that end, the purge device 15 is, for example, equipped with at least one controllable flow controller 16 . The flow controller 16 comprises, for example, a variable opening controllable valve or an on-off controllable regulating valve. On-off controllable regulating valves are either open or closed and can be switched quickly, i.e. they can change state in a very short time, for example less than 16 ms, for example less than 10 ms. These are, for example, solenoid valves, such as electromagnetic valves or piezoelectric valves. They can therefore be controlled to open or close by a square wave control signal. On-off controllable regulating valves have the advantage that they are simple, reliable, not bulky and cheap.

[0041] The pump set 2 further comprises a control unit 17 configured to control output parameters of the pump set 2 and / or the gas treatment device 3 as a function of an input parameter, the input parameter being the power consumed by the motor M2 of the Roots secondary vacuum pump 5. The control unit 17 comprises one or more controllers or microcontrollers or processors and memory, such as electronic circuit boards, and executes a series of program instructions that enable implementation of a gas pumping and treatment method for a process chamber 101 in which a recipe 103 with alternating deposition and cleaning steps is executed. The control unit 17 can be configured to communicate with a central unit 9 in a manufacturing plant remote from the pumping and processing equipment 1 (see FIG. 1). The central unit 9 is configured to communicate with at least one other local control unit of a pump set in the manufacturing plant and is particularly configured to be able to manage the output parameters of the pump set and / or the gas processing equipment.

[0042] The communication between the control unit 17 and the central unit 9 may be handled via a wired or wireless link. In particular, the control unit 17 is configured to receive signals of the power consumed by the motor M2 of the Roots secondary vacuum pump 5, compare them with data stored in memory, and infer therefrom the amount of gas that can be processed by the downstream gas processing device 3. From this information and data stored in memory, such as look-up tables providing estimates of at least one output parameter of the pump set 2 and / or the gas processing device 3 as a function of the power consumed by the motor M2 of the Roots secondary vacuum pump 5, the control unit 17 can estimate values ​​to be given to one or more output parameters.

[0043] Thus, by knowing even roughly the amount of gas being processed by the gas processing device 3, it is possible to deduce, via a look-up table, the step of the recipe currently being executed in the process chamber 101, and thus the nature of the gas being pumped, and to adapt the output parameters of the pump set 2 and / or the gas processing device 3 to the pumping conditions. This solution is autonomous with respect to the manufacturing facility 100, i.e. it can be implemented in a pumping and processing device 1 that does not communicate with the manufacturing facility 100.

[0044] According to an exemplary embodiment, the output parameter of the pump set 2 is the flow rate of the purge gas injected by the purge device 15 . The power consumed by the motor M2 of the Roots secondary vacuum pump 5 allows an estimation of the amount of gas being treated by the gas treatment device 3. From this information and data stored in a memory, such as a look-up table, that provides at least one estimate of the flow rate of the purge gas injected by the purge device 15 as a function of the point at which the purge gas is injected, the flow rate of the injected purge gas can be inferred. By knowing roughly the amount of gas treated by the gas treatment device 3, the flow rate of the purge gas injected by the purge device 15 can be adapted to the pump conditions. In this way, it is possible to limit the consumption of purge gas, which reduces the energy consumption of the pump set 2 and at the same time the energy consumption of the gas treatment device 3, minimizing or even eliminating the production of nitrogen oxides in the gas treatment device 3.

[0045] According to an exemplary embodiment, in a first operating state of the Roots secondary vacuum pump 5 with a first power, the flow rate of the injected purge gas is greater than the flow rate in the case of a second operating state of the Roots secondary vacuum pump 5 with a second power higher than the first power. 3, which shows an example of the power consumed by the motor M2 of the Roots secondary vacuum pump 5 as a function of the flow rate of the gas pumped by the Roots secondary vacuum pump 5. The graph collectively illustrates all the pumping situations that may be encountered by a pump set 2 fluidly connected to a process chamber 101, and in particular, this process chamber implementing a recipe 103 that alternates between a deposition step B and a cleaning step A.

[0046] From this graph, it can be seen that the power consumed by the motor M2 of the Roots secondary vacuum pump 5 during cleaning step A is much higher than the power consumed during deposition step B. Knowing the look-up table (or the curve of FIG. 3), one can infer whether the process chamber 101 is undergoing deposition step B or a cleaning step as a function of the power consumed. In this embodiment, the second operating state, in which the purge gas is injected into pump stages T1-T5 of the primary vacuum pump 4, i.e. downstream of the Roots vacuum pump 5, and the power consumed by the motor M2 of the Roots vacuum pump 5 is the highest, corresponds to the cleaning step A, in which the flow rate of the gas treated by the treatment device 3 is lower than that of the deposition step B and the cleaning gas (NF3) is already dissolved. The first operating state, in which the power is lower, corresponds to the deposition step.

[0047] Here, the first operating state corresponds, for example, to a power consumed by the motor M2 of the Roots vacuum pump 5 being less than 2000 W, and the second operating state corresponds, for example, to a power consumption of 2000 W or more. Increasing the flow rate of purge gas injected by the purge device 15 when the power consumed by the motor M2 of the Roots secondary vacuum pump 5 is low facilitates dilution and driving of the gas in the gas flow path during the deposition step. By reducing the flow rate of purge gas injected by the purge device 15 when the power consumed by the motor M2 of the Roots secondary vacuum pump 5 is high, the consumption of purge gas, the energy consumption of the pump set 2 and the gas treatment device 3 is limited and the formation of nitrogen oxides is minimized.

[0048] The flow rate of the purge gas in the first operating state is, for example, at least 20% higher than the flow rate of the purge gas in the second operating state, which may be, for example, zero, except for the flow rate of the purge gas injected into the bearings of the primary vacuum pump 4 to protect the rolling bearings and sealing devices located at the ends of the primary vacuum pump 4. The control unit 17 may further be configured to control the flow rate of the purge gas injected by the purge device 15 at multiple flow rates corresponding to multiple power ranges consumed by the motor M2 of the Roots secondary vacuum pump 5, each power range corresponding to a separate recipe 103 that can be implemented in the process chamber 101. In this way, the flow rate of the purge gas can be precisely adapted to the pumping conditions. The purge device 15 may include a purge gas heating device 18 (see FIG. 1) for heating the purge gas, for example to 50° C. or higher, for example to 500° C. or higher.

[0049] An output parameter of the pump set 2 controllable by the control unit 17 depending on the power consumption of the motor M2 may be the power of the heating device 18 for controlling the purge gas heating temperature. For example, in a first operating state of the Roots secondary vacuum pump 5 with a first power, the power of the heating device 18 will be higher than in a second operating state of the Roots secondary vacuum pump 5 with a second power that is higher than the first power. By increasing the power of the heating device 18 when the power consumption of the motor M2 of the Roots secondary vacuum pump 5 is low, the temperature of the purge gas increases during the deposition step, which facilitates dilution and driving of the gas in the gas flow path. By reducing the power of the heating device 18 in case of high power consumption of the motor M2 of the Roots secondary vacuum pump 5, excessive power consumption of the heating device 18 is avoided. It is thus possible to adapt the power consumption of the heating of the vacuum lines to the flow rate of the gas treated by the gas treatment device 3 and avoid excessive consumption.

[0050] The power of the heating device 18 in the first operating state is at least 20% higher than the second power of the heating device 18 in the second operating state, which may be, for example, zero. The control unit 17 can further be configured to control multiple powers of the heating device 18 corresponding to multiple power ranges consumed by the motor M2 of the Roots secondary vacuum pump 5. Each power range corresponds to a separate recipe 103 that can be implemented in the process chamber 101. In this way, the heating of the vacuum lines can be precisely adapted to the pumping situation.

[0051] If the processing unit 6 includes a combustor 7, the output parameters of the gas processing device 3, which can be controlled by the control unit 17 as a function of the power consumed by the motor M2, can also be the flow rates of oxidant and fuel injected by the oxidant and fuel injectors 11. For example, in a first operating state of the Roots secondary vacuum pump 5 with a first power, the flow rates of oxidant and fuel injected by the oxidant and fuel injector 11 are greater than in a second operating state of the Roots secondary vacuum pump 5 with a second power that is higher than the first power.

[0052] By increasing the flow rate of oxidizer and fuel injected into the combustor 7 when less power is consumed by the motor M2 of the Roots vacuum pump 5, the temperature of the flame in the combustor 7 during the deposition step is increased, which makes it easier to convert the process gas residues into soluble substances and makes the gas easier to process. By reducing the flow rates of oxidizer and fuel injected into the combustor 7 when the motor M2 of the Roots vacuum pump 5 is drawing high power, the flame temperature during the cleaning step is reduced and oxidizer and fuel can be saved. The flow rates of oxidizer and fuel can thus be adapted to the flow rate of the gas treated by the gas treatment device 3, avoiding excessive consumption. The flow rates of the oxidant and fuel in the first operating state are, for example, at least 20% greater than the flow rates of the oxidant and fuel in the second operating state.

[0053] The oxidizer and fuel flow rates in the second operating state are preferably non-zero in order to keep the flame constantly lit, in particular in order to more quickly resume a deposition step following a cleaning step in the process chamber 101. However, as described below, if the recipe 103 executed in the process chamber 101 uses or generates sufficient soluble gases and residues during the cleaning step, the pumped gases can be diverted for the second operating state, bypassing the treatment unit 6 and reconnected directly to the scrubber 8 or central scrubber of the gas processing device 3.

[0054] The control unit 17 can further be configured to control multiple flow rates of oxidizer and fuel injected by the oxidizer and fuel injectors 11 corresponding to multiple power ranges consumed by the motor M2 of the Roots secondary vacuum pump 5, each power range corresponding to a distinct recipe 103 that can be executed in the process chamber 101. In this way, the consumption of oxidizer and fuel can be precisely adapted to the pump conditions. The control of the flow controllers 13, 14 can be done directly by a control unit 17 of the pump set 2 or by a local control unit 19 of the gas processing device 3 which communicates with the control unit 17.

[0055] The control unit 17 and the local control unit 19 may communicate with each other by a wired or wireless link. The control unit 17 may be configured to communicate with a central unit 9 of the manufacturing plant. The central unit 9 may be configured to communicate with the local control unit 19 and at least one other local gas processing equipment control unit of the manufacturing plant to manage the oxidant and fuel injection flow rates of the set of gas processing equipment. If the processing unit 6 is equipped with an electrical system and / or a plasma generating device, the output parameter of the gas processing device 3 that can be controlled by the control unit 17 as a function of the power consumed by the motor M2 can be the power of the electrical system or the plasma generating device. For example, in a first operating state of the Roots secondary vacuum pump 5 with a first power, the power of the electrical system or plasma generating device is higher than in a second operating state of the Roots secondary vacuum pump 5 with a second power that is higher than the first power.

[0056] By increasing the power of the electrical system or plasma generating device when the power consumed by the motor M2 of the Roots vacuum pump 5 is low, the power of the plasma light is increased, which makes it easier to convert the residues of the process gas into soluble substances, making it easier to process the gas in particular. By reducing the power of the electrical system or the plasma generator in the case of high power consumption, excessive power consumption of the electrical system or the plasma generator is avoided. It is thus possible to adapt the power consumption of the gas treatment device 3 to the flow rate of the gas to be treated, thus avoiding excessive consumption. The power of the electrical system or plasma generator in the first operating state may be, for example, at least 20% greater than the power of the electrical system or plasma generator in the second operating state.

[0057] The power of the electrical system or plasma generator in the second operating state is preferably non-zero in order to minimize heating power, in particular in order to more quickly resume a deposition step following a cleaning step in the process chamber 101. However, as will be described below, if the recipe 103 executed in the process chamber 101 uses or generates sufficient soluble gases and residues during the cleaning step, the pumped gases can be diverted to the second operating state to bypass the treatment unit 6 of the gas processing device 3 and reconnected directly to the cleaner 8 or central cleaner of the gas processing device 3. The control unit 17 can further be configured to control multiple powers of the electrical system or plasma generating device corresponding to multiple power ranges consumed by the motor M2 of the Roots secondary vacuum pump 5. Each power range corresponds to a separate recipe 103 that can be executed in the process chamber 101. In this way, the power consumption of the gas processing device 3 can be precisely adapted to the pumping situation.

[0058] According to an exemplary embodiment, the pumping and treatment device 1 comprises a connection device 20 which is configured to direct the gas pumped by the pump set 2 to the treatment unit 6 of the gas treatment device 3, to the scrubber 8 of the gas treatment device 3, to a central scrubber or to another gas treatment device depending on the power consumed by the motor M2 of the Roots secondary vacuum pump 5, the output parameter of the gas treatment device 3 being the orientation of the connection device 20 (see figures 1 and 2). The connection device 20 comprises, for example, a three-way or four-way valve that can be controlled by the control unit 17 .

[0059] For example, the control unit 17 is configured to direct the gas pumped by the pump set 2 to the treatment unit 6 in order to place the Roots secondary vacuum pump 5 in a first operating state with a first power, or to direct the gas pumped by the pump set 2 to the scrubber 8 or to a central scrubber or another gas treatment device in order to place the Roots secondary vacuum pump 5 in a second operating state with a second power greater than the first power. The cleaning gases used during the cleaning step are sufficiently soluble that they do not need to be pre-treated in the treatment unit 6. The gases leaving the pump set 2 can bypass the treatment unit 6 and be conveyed directly to the scrubber 8 or a central scrubber, or to another gas treatment device.

[0060] The control unit 17 can further be configured to be able to control the direction of the gas pumped by the pump set 2 according to a number of power ranges consumed by the motor M2, each power range corresponding to a distinct recipe 103 that can be executed in the process chamber 101. This allows the treatment of the gas at the output side of the pump set 2 to be precisely adapted to different pumping situations.

[0061] 4 shows a more precise exemplary embodiment of a purging device 15. This purging device 15 is configured to inject a purging gas into at least one pump stage T1-T5 of the primary vacuum pump 4. The primary vacuum pump 4 comprises a stator (or pump body) mounted in series between the inlet 21 and the outlet 22 and forming at least two pump stages T1-T5 through which the gas to be pumped can circulate. In the illustrated example, the primary vacuum pump 4 comprises five pump stages T1-T5. The pump stage T1 communicating with the inlet 21 is the lowest pressure stage and is also called the first pump stage. The pump stage T5 communicating with the outlet 22 is the highest pressure stage and is also called the last pump stage. The primary vacuum pump 4 further comprises two rotors extending into the compression chambers of the pump stages T1-T5. The successive pump stages T1-T5 are connected to each other in series by respective interstage channels connecting the output of the previous pump stage to the input of the next stage. The rotors have lobes of the same profile, e.g. "Roots" or "Claw" type, or are of screw type or other similar positive displacement vacuum pump principle. The rotors are arranged to rotate synchronously in opposite directions in the pump stages T1-T5. During rotation, gas sucked from the inlet is trapped in the volume created by the rotor and stator of the pump stage T1-T5 and is then driven by the rotor to the next stage. The rotors are driven in rotation by at least one motor M1 of the primary vacuum pump 4, for example located at one end. Here, the purge device 15 comprises a distributor 23 configured to distribute purge gas to at least one pump stage T1 to T5 of the primary vacuum pump 4, and at least one flow controller 16 configured to control the flow rate of the purge gas in the distributor 23.

[0062] The distributor 23 comprises, for example, a common part with one input connected to a purge gas source and at least two branches connected on the one hand to the common part and on the other hand to each of the pump stages T1 to T5. The branches connected to the first pump stage T1 and the last pump stage T5 are, for example, arranged to emerge at the bearings of the primary vacuum pump 4, in particular to protect the rolling bearings and the sealing devices located at both ends of the primary vacuum pump 4. The branches connected to the intermediate pump stages T2, T3, T4 are, for example, arranged to emerge at the respective outputs of the stages. For example, one flow controller 16 is arranged in each branch of the distributor 23, which can be controlled by the control unit 17 depending on the power consumed by the motor M2 of the Roots secondary vacuum pump 5 and thus the amount of gas processed. [Explanation of symbols]

[0063] 1 Pumping and treatment equipment 2 Pump Set 3 Gas treatment equipment 4 Primary Vacuum Pump 5. Roots Secondary Vacuum Pump 6 Processing Unit 7. Combustor 8. Cleaning Machine 9 Central Unit 11 Fuel injection device 12 Combustion chamber 13 First flow controller 14 Second flow controller 15 Purging device 16 Flow Controller 17 Control Unit 18 Heating device 19 Local Control Unit 20 Connection Device 100 Manufacturing equipment 101 Process chamber 103 Recipes F1 Gas flow direction M1, M2 motors T1~T5 pump stages

Claims

1. A pumping and treatment device (1) comprising at least one pump set (2) and at least one gas treatment device (3) comprising a treatment unit (6), the pump set (2) being fluidly connected downstream of the process chamber (101) and upstream of the gas treatment device (3) in the direction of flow of the pumped gas (F1); The pump set (2) includes a primary vacuum pump (4) and a Roots secondary vacuum pump (5) mounted in series upstream of the primary vacuum pump (4) and including a motor (M2); 2. The pump set (2) comprises a control unit (17) configured to control an output parameter of the gas treatment device (3) as a function of an input parameter, the input parameter being the power consumed by the motor (M2) of the Roots secondary vacuum pump (5).

2. 2. The method of claim 1, further comprising a purge device (15) configured to inject a purge gas into the flow path of the pumped gas between the output of the process chamber (101) and the input of the gas processing device (3), The control unit (17) is also configured to control output parameters of the pump set (2); 2. A pumping and treatment device, comprising: a pump set (2) for pumping a gas through a purge device (15) and a purge gas supply (16) for supplying the gas to the purge device (15);

3. In claim 2, 1. A pumping and processing apparatus comprising: a Roots secondary vacuum pump having a first power supply and a second power supply, the first power supply being connected to said Roots secondary vacuum pump; a second power supply being connected to said Roots secondary vacuum pump;

4. In claim 2, the control unit (17) is configured to control a plurality of flow rates of the purge gas injected by the purge device (15) corresponding to a plurality of power ranges consumed by the motor (M2) of the Roots secondary vacuum pump (5); Each of said power ranges corresponds to a distinct recipe (103) that can be performed in said process chamber (101).

5. In claim 1, a purge device (15) configured to inject a purge gas into the flow path of the pumped gas between the output of the process chamber (101) and the input of the gas processing device (3); the purge device (15) comprises a heating device (18) for heating the purge gas, and the control unit (17) is configured to control output parameters of the pump set (2); 2. A pumping and treatment device according to claim 1, wherein said output parameter of said pump set (2) is the power of said heating device (18).

6. In claim 1, the treatment unit (6) comprises a combustor (7), the combustor (7) further comprising an oxidant and fuel injector (11) configured to inject an oxidant and a fuel into the flow path of the pumped gas; A pumping and treatment device, characterized in that the output parameters of the gas treatment device (3) are the flow rates of the oxidant and the fuel injected by the oxidant and fuel injection devices (11).

7. In claim 1, 2. A pumping and treatment device, characterized in that the treatment unit (6) comprises an electric system and / or a plasma generating device, and the output parameter of the gas treatment device (3) is the power of the electric system or the plasma generating device.

8. In claim 1, a connection device (20) configured to direct the gas pumped by the pump set (2) to the treatment unit (6) of the gas treatment device (3) or to a scrubber (8) of the gas treatment device (3) or to a central scrubber or to another gas treatment device, A pumping and treatment device, characterized in that said output parameter of said gas treatment device (3) is the orientation of said connection device (20).

9. A pump and treatment device (1) according to claim 1, said control unit (17) being adapted to communicate with a central unit (9) of the production plant; The manufacturing plant is, in particular, an apparatus for manufacturing semiconductor elements or photovoltaic panels or flat screens, characterized in that it comprises a manufacturing installation (100) and the pump and processing device (1) fluidly connected to the manufacturing installation (100).

10. 3. A method for pumping and treating gases by means of a pumping and treatment device (1) according to claim 1 or 2, characterized in that an output parameter of the gas treatment device (3) is controlled as a function of an input parameter, which is the power consumed by the motor (M2) of the Roots secondary vacuum pump (5).

11. 11. The method of claim 10, wherein the method is performed in a process chamber (101) in which a recipe (103) is executed that includes alternating deposition and cleaning steps.

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