Optoelectronic component and method for manufacturing optoelectronic component

Abstract

The optoelectronic component comprises a carrier, at least one optoelectronic semiconductor chip arranged on the carrier, and a housing comprising a molding, the housing at least partially enclosing the optoelectronic semiconductor chip, and a reflective layer arranged on at least one side of the optoelectronic semiconductor chip. Further provided is a method for producing the optoelectronic component.

Description

[Technical field]

[0001] An optoelectronic component and a method for manufacturing an optoelectronic component are provided. [Background technology]

[0002] Optoelectronic components such as radiation emitting or receiving components, e.g. light emitting diodes (LEDs) and detectors, are used in many applications. The optoelectronic components comprise, for example, a carrier, an optoelectronic semiconductor chip having an active area, and a housing. One function of the housing is to provide greater robustness and a longer lifetime for the optoelectronic components. Housings that are subject to ultraviolet (UV) radiation often suffer a shortened lifetime due to attack by UV radiation. Summary of the Invention [Problem to be solved by the invention]

[0003] It is an object of the present invention to identify an optoelectronic component that can operate particularly efficiently. It is a further object of the present invention to identify a method for manufacturing an optoelectronic component that can operate particularly efficiently. [Means for solving the problem]

[0004] This problem is solved by the subject matter of the independent claims. Advantageous configurations and further developments are given in the dependent claims.

[0005] According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises a carrier. The carrier can for example be constituted by or can include a growth substrate. The carrier can comprise a ceramic material or be a ceramic substrate. Alternatively, the carrier can be another mechanically supporting part of the optoelectronic component. Furthermore, the carrier can comprise electrical contacts, whereby the optoelectronic component can be electrically contacted, for example from the rear side. Thus, a part of the electrical contact can be arranged on the underside of the carrier. This part of the electrical contact represents the electrical rear contact of the optoelectronic component. A further part of the electrical contact can be arranged on the upper side of the carrier. The electrically contacted parts on both the top and bottom sides of the carrier are electrically conductively connected to each other. Furthermore, the carrier can also comprise a coating.

[0006] The carrier may be a three-dimensional body having, for example, at least approximately the shape of a rectangular parallelepiped, a cylinder, or a disk. The carrier may have a main extension plane. The main extension plane of the carrier is parallel to a surface of the carrier, for example the coating surface.

[0007] According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises at least one optoelectronic semiconductor chip arranged on a carrier. The optoelectronic semiconductor chip may be a light-emitting diode chip, for example a light-emitting diode chip. The optoelectronic semiconductor chip may be designed to emit electromagnetic radiation when operated. For example, the optoelectronic semiconductor chip may emit electromagnetic radiation in the ultraviolet range. This emission may take place in particular in an orientation in which the optoelectronic semiconductor chip is not surrounded by a housing or carrier. Alternatively, the optoelectronic semiconductor chip may also be suitably used to receive electromagnetic radiation. The optoelectronic semiconductor chip may be arranged on an electrical contact of the carrier, which is arranged on the upper side of the carrier. This allows the optoelectronic semiconductor chip to be electrically contacted.

[0008] According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises a housing with a molding, the housing at least partially surrounding the optoelectronic semiconductor chip. For example, the molding can be formed on the optoelectronic semiconductor chip by casting, injection molding or extrusion. The molding can comprise a molding compound or can completely consist of a molding compound. The molding compound is, for example, but not necessarily, a polymer, epoxy or silicone. It is to be noted that the housing at least partially surrounding the optoelectronic semiconductor chip can mean that the housing at least partially surrounds the optoelectronic semiconductor chip in a lateral direction parallel to the main extension plane of the carrier. This can mean that the housing extends at least partially in the lateral direction around the optoelectronic semiconductor chip. The housing can completely surround the optoelectronic semiconductor chip in the lateral direction. The housing can be arranged at a distance from the optoelectronic semiconductor chip. Furthermore, a mechanically robust optoelectronic component can be realized by the housing.

[0009] According to at least one embodiment of the optoelectronic component, a reflective layer is arranged on at least one side of the optoelectronic semiconductor chip. The reflective layer can be optically reflective. The reflective layer can be a layer with a reflectivity of more than 40%, for example more than 50%, in particular more than 80%, preferably more than 90%, particularly preferably more than 95%, in particular almost 100%. This reflectivity can be achieved, for example, over a wide range of the spectrum of electromagnetic radiation or can apply only to a certain wavelength range. Alternatively or additionally, the reflective layer can have a low transmittance. The transmittance can be at most 20%, for example at most 10%, in particular at most 1%. This transmittance can be achieved, for example, over a wide range of the spectrum of electromagnetic radiation or can apply only to a certain wavelength range. For example, the wavelength range can be the UV-C region, i.e. the wavelength range of 100 nm-280 nm. For this wavelength band, the reflective layer can have one of the reflectivities and / or transmittances mentioned above.

[0010] The reflective layer may consist of or contain a metal. For example, the reflective layer may contain gold, preferably rhodium, and particularly preferably aluminum. At least 90% of the volume of the reflective layer may consist of gold, rhodium or aluminum.

[0011] The reflective layer can also be, for example, a mirror. Thus, the reflective layer can comprise, for example, a dielectric mirror, a hybrid mirror, a multi-layer mirror, etc. In particular, the reflective side of the mirror can face the optoelectronic semiconductor chip.

[0012] The reflective layer may have a thickness of at least 20 nm, such as at least 50 nm. For example, the reflective layer may have a thickness of at least 1 μm.

[0013] The at least one side surface designates a surface of the optoelectronic semiconductor chip. The side surface is therefore part of the optoelectronic semiconductor chip. The at least one side surface is preferably a surface of the optoelectronic semiconductor chip that is aligned perpendicularly or transversely to the main extension plane of the carrier. Furthermore, the side surface is a surface that is not intended for the emission of electromagnetic radiation.

[0014] According to at least one embodiment, an optoelectronic component comprises a carrier, at least one optoelectronic semiconductor chip having a reflective layer arranged on at least one side and arranged on the carrier, and a housing having a molding and at least partially surrounding the optoelectronic chip.

[0015] The optoelectronic component described here is particularly based on the idea that a reflecting layer allows for high brightness, since a low proportion of the radiation emitted by the optoelectronic semiconductor chip is absorbed by the surrounding housing and can be emitted instead in a preferred exit direction. This allows for a minimization of the lateral emission of the optoelectronic semiconductor chip, which is usually not usable for the application. The preferred exit or entrance direction can be a direction extending perpendicularly to the main extension plane of the carrier. By means of the reflecting layer, at least a part of the housing material can be protected from the emitted electromagnetic radiation. Typical housing materials can be damaged by electromagnetic radiation and by UV radiation. Such damage is reduced at least by using a reflecting layer. In this way, the housing material can be at least partially protected from, for example, UV radiation emitted by the optoelectronic semiconductor chip. This allows the optoelectronic component to have a longer life and to operate more efficiently.

[0016] According to at least one embodiment of the optoelectronic component, the reflective layer is in at least part direct contact with the optoelectronic semiconductor chip. The reflective layer can be in at least part direct contact with the optoelectronic semiconductor chip at the side surface. The reflective layer can be in direct contact with the optoelectronic semiconductor chip over the entire side surface. This means that the reflective layer can completely cover the side surface. Due to the reflective layer being in direct contact with the optoelectronic semiconductor chip, the component size can be minimized or at least made smaller. This also allows for a higher brightness.

[0017] According to at least one embodiment of the optoelectronic component, at least one side surface of the optoelectronic semiconductor chip on which the reflective layer is arranged faces at least a part of the housing. The optoelectronic semiconductor chip can have at least one side surface. The housing can at least partially mold the optoelectronic semiconductor chip. For this reason, the housing can be arranged at least partially adjacent to at least one side surface of the optoelectronic semiconductor chip. The reflective layer can also be arranged on this at least one side surface. Facing a part of the housing means that the side surface of the optoelectronic semiconductor chip with the reflective layer runs partially parallel to the housing and only the reflective layer is arranged between the optoelectronic semiconductor chip and the housing. Thus, facing also means that the side surface of the optoelectronic semiconductor chip on which the reflective layer is applied is in direct contact with the housing. One idea of ​​the invention is that materials that are not highly UV-resistant can also be used as housing materials, for example molding compounds. An advantage of the above embodiment is that radiation emitted by the optoelectronic semiconductor chip is reflected by the reflective layer and is not radiated into the housing in these areas or penetrates the housing material. This prevents the housing from being damaged by the emitted electromagnetic radiation.

[0018] According to at least one embodiment of the optoelectronic component, the reflective layer completely covers at least one side of the optoelectronic semiconductor chip. The reflective layer may completely cover all sides of the optoelectronic semiconductor chip. The advantage of the embodiment is that the radiation emitted by the optoelectronic semiconductor chip is reflected particularly efficiently by the reflective layer on at least one side, i.e. over the entire side, and is not radiated into the housing or penetrated into the housing material. This protects the housing from damage caused by the radiated electromagnetic radiation.

[0019] According to at least one embodiment of the optoelectronic component, at least one side surface of the optoelectronic semiconductor chip extends transversely or perpendicularly to the main extension plane of the carrier. The side surface can have a main extension plane that extends transversely or perpendicularly to the main extension plane of the carrier. The side surface is thus a surface that is not intended for emitting electromagnetic radiation. Preferably, radiation emitted from the side surface is reflected by a reflecting layer.

[0020] According to at least one embodiment of the optoelectronic component, the optoelectronic semiconductor chip comprises a further reflective layer on at least one further side extending transversely or perpendicularly to the main extension plane of the carrier. The further side is a different side of the optoelectronic semiconductor chip and therefore a different face of the optoelectronic semiconductor chip from the at least one side. In other respects, the further side may have similar properties to the side. The further reflective layer is arranged on the further side of the optoelectronic semiconductor chip. It should be noted that the further reflective layer may have similar properties to the reflective layer. An advantage of this embodiment is that the radiation emitted by the optoelectronic semiconductor chip can be particularly efficiently reflected by the reflective layer also arranged on the further side.

[0021] According to at least one embodiment of the optoelectronic component, the reflective layer is arranged on at least one further side surface of the optoelectronic semiconductor chip, which extends transversely or perpendicularly to the main extension surface of the carrier. The reflective layer can thereby cover a part of the further side surface or cover the entire surface. Furthermore, the reflective layer can also be arranged on all further side surfaces. As a result, a large proportion of the radiation emitted by the optoelectronic semiconductor chip on these sides is reflected. This prevents the housing from being damaged by the radiation.

[0022] According to at least one embodiment of the optoelectronic component, the reflective layer is in direct contact with the housing at least in part. The reflective layer can be in direct contact with the housing at least in part of the side of the optoelectronic semiconductor chip. The reflective layer can also be in direct contact with the housing, for example, over all sides of the side of the optoelectronic semiconductor chip. The idea of ​​the optoelectronic component described in the present disclosure is to allow a more compact design, which allows, for example, chip-scale package dimensions to be realized. This allows more optoelectronic components to be arranged consistently over a large area, which increases the brightness. The direct contact of the reflective layer with the housing allows a compact design of the optoelectronic component and also improves the stability of the reflective layer.

[0023] According to at least one embodiment of the optoelectronic component, the reflective layer comprises a metal, aluminum, rhodium and / or a mirror, as these materials have a high reflectivity in the UV range, so that a reflective layer made of one of these materials can, for example, reflect the emitted UV radiation particularly efficiently.

[0024] According to at least one embodiment of the optoelectronic component, the optoelectronic semiconductor chip is designed to emit electromagnetic radiation in the ultraviolet range when in operation, for this purpose the optoelectronic semiconductor chip can be, for example, a UV LED, a UV laser or a UV sapphire flip chip.

[0025] The idea of ​​the optoelectronic component described here is that a reflective layer is arranged between the optoelectronic semiconductor chip and the housing, thereby extending the service life of the housing, which is manufactured, for example, by a molding made of a UV-unstable material, by slowing down, preventing or almost preventing deterioration in the UV range induced by the emission of radiation.

[0026] According to at least one embodiment of the optoelectronic component, the reflective layer has a reflectivity in the UV range of at least 40%, at least 50% or at least 80%. A reflectivity of at least 40%, at least 50% or at least 80% of the reflective layer provides better protection of the housing material from UV radiation, since UV radiation impinging on the reflective layer is reflected and does not penetrate into the housing, and a higher proportion of UV radiation is emitted in the outgoing direction.

[0027] According to at least one embodiment of the optoelectronic component, the reflective layer has a transmittance of at most 20%, for example at most 10%, in particular at most 1%. Another term for transmittance is transparency. One advantage of this embodiment is that due to the low transmission of the reflective layer, UV radiation impinging on the reflective layer can be at least partially reflected and / or absorbed by the reflective layer. This allows for better protection of the housing material from UV radiation.

[0028] According to at least one embodiment of the optoelectronic component, the carrier is electrically contactable on the side facing away from the optoelectronic semiconductor chip. Electrically contactable may mean that the carrier comprises at least one electrical contact on the side facing away from the optoelectronic semiconductor chip. The electrical contact can be electrically connected with an electrical contact of the optoelectronic semiconductor chip. The carrier can comprise vias passing through the carrier. The vias can for example connect the bottom side of the carrier with the top side of the carrier perpendicularly or transversely to the main extension of the carrier. In this way, the optoelectronic semiconductor chip can be electrically contacted via the underside of the carrier, which is preferred. This means that the optoelectronic component can be surface mounted. In this case, no electrical contact is required at the radiation exit side of the optoelectronic semiconductor chip. This means that the entire upper side of the optoelectronic semiconductor chip is available for radiation emission. This allows an efficient operation of the optoelectronic component.

[0029] According to at least one embodiment of the optoelectronic component, an electrically insulating filler is arranged between the carrier and the optoelectronic semiconductor chip, which fills the gaps formed by the electrical contacts and the optoelectronic semiconductor chip, thereby preventing short-circuiting of the optoelectronic component via the reflective layer. One feature of the filler is that it is in particular electrically insulating. The filler can be, for example, a filling compound consisting of or containing epoxy.

[0030] The filler material can be flush with the edge of the optoelectronic semiconductor chip, or the filler material can extend beyond the edge of the optoelectronic semiconductor chip, or cover a portion of the side of the optoelectronic semiconductor chip, for example.

[0031] For example, the reflective layer is in direct contact with the carrier and the filler.

[0032] According to at least one further embodiment of the optoelectronic component, the carrier comprises a ceramic material and vias, and the optoelectronic semiconductor chip is a sapphire flip chip. The sapphire flip chip can be designed to emit electromagnetic radiation in the UV-C range. In particular, a reflective layer, which may contain aluminum, can be applied directly to the side of the sapphire flip chip. A housing can surround the sapphire flip chip and thus be directly adjacent to the reflective layer.

[0033] Further provided is a method for producing an optoelectronic component, preferably produced by a method as described herein, in other words, all features disclosed for the method for producing an optoelectronic component also disclose all features disclosed for the optoelectronic component and vice versa.

[0034] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, the method comprises the method steps of providing a carrier.

[0035] According to at least one embodiment of a method for manufacturing an optoelectronic semiconductor chip, the method comprises the method step of applying an optoelectronic semiconductor chip onto a carrier, the optoelectronic semiconductor chip being attached to the carrier, for example by soldering or gluing.

[0036] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor chip, the method comprises the method step of applying a reflective layer to at least one side of the optoelectronic semiconductor chip, whereby the reflective layer can also be in at least partial direct contact with the carrier, meaning that the reflective layer can be applied partially onto the carrier, the reflective layer can also be applied to all exposed surfaces, in particular of the carrier, the optoelectronic semiconductor chip and, in the case of a possible temporary medium, of the temporary medium.

[0037] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor chip, the method comprises a method step in which the optoelectronic semiconductor chip is at least partially molded by a housing comprising a molding body. The housing can comprise a molding body made of a molding compound, for example. The housing can be adapted to the semiconductor chip by molding, injection molding or extrusion.

[0038] The idea of ​​the method disclosed herein is that the applied reflective layer reduces the proportion of radiation emitted by the optoelectronic semiconductor chip that is absorbed by the surrounding housing and is instead emitted in a preferred emission direction, resulting in higher brightness. Furthermore, the reflective layer can at least partially protect the housing material from the radiation of the emitted electromagnetic radiation, which allows the optoelectronic component to have a longer life and operate more efficiently.

[0039] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, a temporary medium is applied to the optoelectronic semiconductor chip prior to the application of the reflective layer. The temporary medium may comprise a lacquer. The temporary medium can be applied to the optoelectronic semiconductor chip, for example, by vapor deposition, coating, sputtering, dispensing and / or stamping. In particular, the temporary medium can be applied only to the side of the optoelectronic semiconductor chip facing away from the carrier. It should be noted that the temporary medium can be applied to the optoelectronic semiconductor chip before or after the application of the optoelectronic semiconductor chip to the carrier.

[0040] The temporary medium can be removed, for example, by wet blasting. The use of a temporary medium has the advantage that the optoelectronic semiconductor chip is protected on the side facing the temporary medium.

[0041] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, the reflective layer is applied directly to at least one side surface of the optoelectronic semiconductor chip, the side surface extending transversely or perpendicularly to the main extension plane of the carrier. Methods for applying the reflective layer to the optoelectronic semiconductor chip include, for example, evaporation or sputtering. The direct contact of the reflective layer with the optoelectronic semiconductor chip allows the component size to be minimized or at least reduced. This also results in a higher brightness. The reflective layer can also be applied directly to at least one side surface using standard processes. The side surface extending transversely or perpendicularly to the main extension plane of the carrier is a surface that is not intended for the emission of electromagnetic radiation. Preferably, radiation emitted from the side surface is reflected by the reflective layer.

[0042] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, the reflective layer, after application, completely covers the carrier together with the optoelectronic semiconductor chip.

[0043] Entirely here means that the reflective layer is applied as a continuous coating, for example by vapor deposition or sputtering, to all exposed sides of the carrier with the optoelectronic semiconductor chip, but also means that the reflective layer is arranged on the side surfaces of the optoelectronic semiconductor chip.

[0044] For example, the reflective layer is not at least partially or completely removed from the carrier after application. The reflective layer can at least partially cover the carrier, for example, upon completion of the optoelectronic semiconductor chip. For example, the reflective layer is in direct contact with the carrier.

[0045] The idea of ​​the method steps is to apply a reflective layer to the surface of an optoelectronic semiconductor chip. The advantage of this embodiment is that the reflective layer does not have to be applied selectively to individual areas, but is completely covered over the entire surface, which simplifies the application steps.

[0046] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, the housing completely surrounds the optoelectronic semiconductor chip, at least on the side surfaces which extend transversely or perpendicularly to the main extension plane of the carrier.

[0047] The housing may completely surround only the side of the optoelectronic semiconductor chip which extends transversely or perpendicularly to the main extension plane of the carrier. It is furthermore conceivable that the upper side of the optoelectronic semiconductor chip which extends parallel to the main extension plane of the carrier is also surrounded by the housing. Surrounding here means that the housing is arranged around the optoelectronic semiconductor chip. It is also possible that only the reflective layer is located between the housing and the semiconductor chip.

[0048] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, after the molding with the housing, the side of the optoelectronic semiconductor chip facing away from the carrier is exposed. The temporary medium, a part of the reflective layer and / or a part of the housing may be located on the side of the optoelectronic semiconductor chip facing away from the carrier. For example, on the side of the optoelectronic semiconductor chip facing away from the carrier, a part of the reflective layer may be located first and a part of the housing on top of it. The housing and the reflective layer can be removed from the side of the optoelectronic semiconductor chip facing away from the carrier, for example by mechanical treatments such as grinding or water grinding. Alternatively, the optoelectronic semiconductor chip can be completely surrounded by the housing only laterally. Thereby, for example, the temporary medium and then a part of the reflective layer are applied to the side of the optoelectronic semiconductor chip facing away from the carrier. The surface of the optoelectronic semiconductor chip facing away from the carrier can then be exposed, for example by water grinding / wet blasting. The advantage of the above method steps is, for example, that no mask is required for the application of the reflective layer and the housing. This makes the method steps of the reflective layer and the method steps of the housing less cumbersome. Additionally, the coating can be easily removed along with the temporary medium.

[0049] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, the side of the optoelectronic semiconductor chip facing away from the carrier is exposed before the molding with the housing. The exposing can include removing the reflective layer. The reflective layer can be removed by wet blasting. The optoelectronic semiconductor chip can then be molded with a molding compound. According to this embodiment, the housing can be arranged up to the edge of the exit or entrance face of the optoelectronic semiconductor chip. The side of the optoelectronic semiconductor chip facing away from the carrier can be free of a housing. An advantage of this embodiment is that less material is removed from the side of the optoelectronic semiconductor chip facing away from the carrier by wet blasting. Furthermore, this embodiment includes a low consumption of housing material.

[0050] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, the method is carried out for a plurality of further optoelectronic semiconductor chips on a carrier and the carrier is cut. Each further optoelectronic semiconductor chip may have a similar configuration to the optoelectronic semiconductor chip. Cutting the carrier can mean that the carrier with the optoelectronic semiconductor chip and the further optoelectronic semiconductor chip is singulated into a plurality of optoelectronic components. An idea of ​​this embodiment is to produce a plurality of optoelectronic components in a particularly efficient manner. An advantage is that a plurality of optoelectronic components can be produced in parallel.

[0051] According to at least one embodiment of the method for producing an optoelectronic semiconductor chip, before applying the reflective layer, the gap formed between the carrier and the side of the optoelectronic semiconductor chip facing the carrier is at least partially filled with an electrically insulating filler material. The filler material can be inserted into the gap, for example, by a spraying process and / or with the aid of capillary forces. The filler material prevents shorting of the optoelectronic component via the reflective layer by filling the gap formed by the electrical contact and the optoelectronic semiconductor chip. The reflective layer can at least partially, in particular completely, cover the side of the filler material that is exposed when the reflective layer is subsequently applied. In particular, the reflective layer can be directly adjacent to the filler material. For example, the reflective layer is not subsequently removed at least partially or completely from the filler material and / or the carrier. In this way, the reflective layer can be directly adjacent to the filler material, for example, in an optoelectronic semiconductor chip produced using the above method. For example, the reflective layer completely covers the filler material on the side that is exposed before the application of the reflective layer. [Brief description of the drawings]

[0052] In the following, the optoelectronic components and methods for manufacturing optoelectronic components described in the present disclosure will be explained in more detail with reference to exemplary embodiments and the accompanying drawings. [Figure 1] FIG. 1 illustrates a schematic cross-sectional view of an optoelectronic component according to an exemplary embodiment. [Figure 2A] FIG. 2A illustrates method steps in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2B] FIG. 2B illustrates a method step in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2C] FIG. 2C illustrates a method step in a method for manufacturing an optoelectronic component according to an exemplary embodiment. [Figure 2D] FIG. 2D illustrates a method step in a method for manufacturing an optoelectronic component according to an example embodiment. [Figure 2E] FIG. 2E illustrates a method step in a method for manufacturing an optoelectronic component according to an example embodiment. [Figure 2F] FIG. 2F illustrates a method step in a method for manufacturing an optoelectronic component according to an example embodiment. [Figure 3A] FIG. 3A further illustrates steps in a manufacturing process for an optoelectronic component according to an exemplary embodiment. [Figure 3B] FIG. 3B illustrates further steps in a manufacturing process for an optoelectronic component according to an exemplary embodiment. [Figure 3C] FIG. 3C illustrates further steps in a manufacturing process for an optoelectronic component according to an exemplary embodiment. [Figure 3D] FIG. 3D illustrates further steps in the manufacturing process of an optoelectronic component according to an exemplary embodiment. [Figure 4A] FIG. 4A shows a further embodiment of a method for manufacturing an optoelectronic component. [Figure 4B] FIG. 4B illustrates a further embodiment of a method for manufacturing an optoelectronic component. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0053] Elements having the same, similar or similar function are given the same reference numerals in the figures. The figures and the proportions of the elements shown in the figures do not necessarily represent exact proportions. Rather, individual elements may be shown exaggerated in size to improve visibility and / or comprehension.

[0054] In FIG. 1, a cross-sectional view of an optoelectronic component 100 is shown. The optoelectronic component 100 comprises a carrier 1. The carrier 1 comprises two vias 6b passing through the carrier 1. On the upper side 10 of the carrier 1, two contact areas 6a are arranged at a distance from each other. On the lower side 9 of the carrier 1, there are two connection areas 6c arranged at a distance from each other. The contact areas 6a, the vias 6b and the connection areas 6c together form an electrical contact 6. Each of the connection areas 6c on the lower side 9 of the carrier 1 is electrically connected to the contact areas 6a on the upper side 10 of the carrier 1 via one of the vias 6b. The upper side 10 is arranged on the opposite side of the carrier 1 to the lower side 9.

[0055] The optoelectronic component 100 comprises an optoelectronic semiconductor chip 2 applied to a carrier 1. The optoelectronic semiconductor chip 2 can be designed, for example, to emit electromagnetic radiation in the ultraviolet range when in operation. On the side facing the carrier 1, the optoelectronic semiconductor chip 2 comprises two solder pads 8. The solder pads 8 are each electrically conductively connected to a contact area 6a of the carrier 1. An electrically non-conductive filler material 5 is inserted in the gap between the optoelectronic semiconductor chip 2 and the carrier 1. As in the illustrated exemplary embodiment, the filler material 5 can be flush with the edge of the optoelectronic semiconductor chip 2. Alternatively, the filler material 5 can, for example, extend beyond the edge of the optoelectronic semiconductor chip 2 or cover part of a side surface 11 of the optoelectronic semiconductor chip 2. The optoelectronic semiconductor chip 2 comprises at least one side surface 11 extending transversely or perpendicularly to the main extension plane of the carrier 1 and at least one further side surface 12. In the cross-sectional view of FIG. 1, the side surface 11 and the further side surface 12 are visible. However, the optoelectronic semiconductor chip 2 can also have more side surfaces 11, 12, for example four side surfaces in total. In the illustrated exemplary embodiment, the reflective layer 3 is applied directly to the side surfaces 11, 12 of the optoelectronic semiconductor chip 2 and completely covers the side surfaces 11, 12. The reflective layer 3 comprises metal, aluminum, rhodium and / or a mirror. The reflective layer 3 only needs to have a reflectivity of at least 40% in the UV range. Furthermore, in this exemplary embodiment, the reflective layer 3 is arranged partly directly on the filler 5 adjacent to the side surfaces 11, 12 and partly directly on the carrier 1. The reflective layer 3 covers the areas of the carrier 1 where there is no optoelectronic semiconductor chip 2. The optoelectronic semiconductor chip 2 is completely surrounded by a housing 4 which is in direct contact with the reflective layer 3 in a lateral direction x extending parallel to the main extension plane of the carrier 1. The housing 4 comprises a molding. The housing 4 is arranged on the carrier 1.For this reason, some areas of the reflective layer 3 are located between the carrier 1 and the housing 4 in a vertical direction z extending perpendicularly to the main extension plane of the carrier 1 .

[0056] An exemplary embodiment of a method for manufacturing an optoelectronic component 100 is shown in FIGS. 2A-2F.

[0057] In a first step, in Fig. 2A, a carrier 1 is provided. Two contact areas 6a are located on the upper side 10 of the carrier 1, and two connection areas 6c are located on the lower side 9 of the carrier 1. The connection areas 6c are connected to the contact areas 6a, respectively, via the carrier 1 by electrically conductive vias 6b. Since Figs. 2A-2F are schematic cross-sectional views, the three parts of the carrier 1 shown are in particular connectable to one another.

[0058] In a next step, in FIG. 2B, the optoelectronic semiconductor chip 2 is soldered by means of solder pads 8 to the contact areas 6 a on the carrier 1 .

[0059] 2C shows the optoelectronic component 100 after a method step of inserting a filler material 5 into the gap between the optoelectronic semiconductor chip 2 and the carrier 1. The filler material 5 prevents short circuits of the optoelectronic semiconductor chip 2 via the reflective layer 3.

[0060] 2D, a reflective layer 3 is then applied onto the optoelectronic component 100. The reflective layer 3 covers the side surfaces 11, 12 of the optoelectronic semiconductor chip 2, the exposed surface of the filling material 5 and partially the upper side 10 of the carrier 1.

[0061] As shown in Fig. 2E, the next step in the manufacturing method for the optoelectronic component 100 then follows, in which the optoelectronic semiconductor chip 2 is shaped by the housing 4, which thereby encloses the optoelectronic semiconductor chip 2 and provides a mechanically robust component. The housing 4 completely covers the optoelectronic semiconductor chip 2 and the areas of the carrier 1 which are free of the optoelectronic semiconductor chip 2. The housing 4 completely surrounds the optoelectronic semiconductor chip 2 on its side faces 11, 12 which extend transversely or perpendicularly to the main extension plane of the carrier 1.

[0062] Figure 2F shows a cross-sectional view of the finished optoelectronic component 100. After application of the housing 4 in Figure 2E, the face of the optoelectronic semiconductor chip 2 facing away from the carrier 1 is exposed. The exposed face is intended to emit radiation when the optoelectronic component 100 is in operation.

[0063] In the schematic cross-sectional views of Figures 3A-3D, a further exemplary embodiment of a method for manufacturing an optoelectronic component 100 is shown, which thus follows on from the exemplary embodiment in Figures 2A-2C.

[0064] 2A-2C, in Fig. 3A a temporary medium 7 is then applied onto the optoelectronic semiconductor chip 2. Thereby, the temporary medium 7 is applied only to the side of the optoelectronic semiconductor chip 2 facing away from the carrier 1.

[0065] 3B, a reflective layer 3 is applied. The reflective layer 3 covers the temporary medium 7, the side surfaces 11, 12 of the optoelectronic semiconductor chip 2, the exposed surface of the filling material 5 and the exposed part of the upper side 10 of the carrier 1.

[0066] FIG. 3C shows the subsequent step of removing the temporary medium 7 and the reflective layer 3 applied thereto from the side of the optoelectronic semiconductor chip 2 facing away from the carrier 1.

[0067] 3D shows the final method step for completing the optoelectronic component 100 by applying the housing 4 so as to laterally shape the optoelectronic semiconductor chip 2. The upper side of the housing 4 is flush with the upper side of the optoelectronic semiconductor chip 2.

[0068] In Fig. 4A a further embodiment of a method for manufacturing an optoelectronic component 100 is shown, whereby the method steps shown in Figs. 2A-2F or 3A-3D are carried out and the manufacturing method is carried out on the carrier 1 for a further plurality of optoelectronic semiconductor chips 2.

[0069] Figure 4B shows a method step subsequent to figure 4A, in which the carrier 1 is cut, so that a number of optoelectronic components 100 can be produced.

[0070] The features and exemplary embodiments described with respect to the figures can be combined with each other in further exemplary embodiments, even if not all combinations are explicitly described. Furthermore, the exemplary embodiments described with respect to the figures may alternatively or additionally include further features according to the description in the general part.

[0071] The present invention is not limited to the description based on the above exemplary embodiments, but rather includes any novel feature and any combination of features, and in particular includes any combination of features in the claims, even if that feature or combination itself is not explicitly recited in the claims or embodiments.

[0072] This patent application claims priority to German patent application 10 2022 102 431.8, the disclosure of which is incorporated herein by reference. [Explanation of symbols]

[0073] 1. Career 2. Optoelectronic semiconductor chips 3 reflective layer 4. Housing 5 Filling material 6 Electrical Contact 6a Contact area 6b Via 6c Connection area 7. Provisional Media 8 Solder Pads 9 Lower side 10 Upper side 11 Side 12 Further aspects 100 Optoelectronic Components x Horizontal z vertical direction

Claims

1. Career (1) and at least one optoelectronic semiconductor chip (2) arranged on said carrier (1); a housing (4) having a molded body and at least partially surrounding the optoelectronic semiconductor chip (2), A reflective layer (3) is arranged on at least one side (11) of the optoelectronic semiconductor chip (2), The carrier (1) has vias (6b), the optoelectronic component (100).

2. 2. The optoelectronic component (100) according to claim 1, wherein the reflective layer (3) is in at least partly direct contact with the optoelectronic semiconductor chip (2).

3. 3. The optoelectronic component (100) according to claim 1 or 2, wherein the at least one side (11) on which the reflective layer (3) is arranged faces at least a part of the housing (4).

4. The optoelectronic component (100) according to any one of the preceding claims, wherein the reflective layer (3) completely covers the at least one side surface (11) of the optoelectronic semiconductor chip (2).

5. 5. The optoelectronic component (100) according to any one of claims 1 to 4, wherein the at least one side surface (11) of the optoelectronic semiconductor chip (2) extends transversely or perpendicularly to a main extension plane of the carrier (1).

6. The optoelectronic component (100) according to any one of claims 1 to 5, wherein the optoelectronic semiconductor chip (2) has a reflective layer (3) on at least one further side surface (12) extending transversely or perpendicularly to the main extension surface of the carrier (1).

7. The optoelectronic component (100) according to any one of the preceding claims, wherein the reflective layer (3) is arranged, at least in parts, in direct contact with the housing (4).

8. The optoelectronic component (100) according to any one of the preceding claims, wherein the reflective layer (3) comprises a metal, aluminium, rhodium and / or a mirror.

9. The optoelectronic component (100) according to any one of the preceding claims, wherein the optoelectronic semiconductor chip (2) is adapted to emit, in operation, electromagnetic radiation in the ultraviolet range.

10. The optoelectronic component (100) according to any one of the preceding claims, wherein the reflective layer (3) has a reflectivity of at least 40% in the UV range.

11. The optoelectronic component (100) according to any one of claims 1 to 10, wherein the carrier (1) is electrically contactable on a side facing away from the optoelectronic semiconductor chip (2), and the carrier (1) is at least partially covered by the reflective layer (3).

12. The optoelectronic component (100) according to any one of claims 1 to 11, wherein an electrically insulating filler (5) is arranged between the carrier (1) and the optoelectronic semiconductor chip (2), and the reflective layer (3) is arranged in part directly on the filler (5).

13. Providing a carrier (1); applying optoelectronic semiconductor chips (2) onto the carrier (1); applying a reflective layer (3) to at least one side surface (11) of the optoelectronic semiconductor chip (2); and forming at least a portion of the optoelectronic semiconductor chip (2) by a housing (4) having a molding, A method for manufacturing an optoelectronic component (100), wherein the carrier (1) comprises vias (6b).

14. 14. The method according to claim 13, further comprising applying a temporary medium (7) to the optoelectronic semiconductor chip (2) prior to the applying step of the reflective layer (3).

15. 15. The method according to claim 13 or 14, wherein the reflective layer (3) is applied directly to the at least one side surface (11) of the optoelectronic semiconductor chip (2), the side surface (11) extending transversely or perpendicularly to a main extension plane of the carrier (1).

16. The method according to any one of claims 13 to 15, wherein the reflective layer (3), after application, completely covers the carrier (1) together with the optoelectronic semiconductor chip (2).

17. The method according to any one of claims 13 to 16, wherein the housing completely surrounds the optoelectronic semiconductor chip (2) at least at the side faces (11) which extend transversely or perpendicularly to a main extension plane of the carrier (1).

18. The method according to any one of claims 13 to 17, wherein the side of the optoelectronic semiconductor chip (2) facing away from the carrier (1) is exposed after molding with the housing (4).

19. The method according to any one of claims 13 to 18, wherein the method is performed for a plurality of further optoelectronic semiconductor chips (2) on the carrier (1) and the carrier (1) is cut.

20. 20. The method according to claim 13, wherein prior to the application of the reflective layer (3), the gap formed between the carrier (1) and the side of the optoelectronic semiconductor chip (2) facing the carrier (1) is at least partially filled with an electrically insulating filler material (5).

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