Substrate processing method

Abstract

The present invention relates to a method for processing a substrate having an insulating layer and an electrode layer formed thereon, the method including: a plasma processing step of performing plasma processing on the substrate using a processing gas containing fluorine (F); a selective adsorption step of injecting a source gas containing a high dielectric constant (High-K) material onto the substrate after the plasma processing step to adsorb the high dielectric constant material only onto the electrode layer; and a selective deposition step of injecting a reaction gas onto the substrate after the selective adsorption step to deposit a high dielectric constant layer only onto the electrode layer.

Description

[Technical field]

[0001] The present invention relates to a substrate processing method for performing a processing step, such as a deposition step, on a substrate. [Background technology]

[0002] Generally, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. For this purpose, a deposition process for depositing a thin film of a specific material on the substrate, a photo process for selectively exposing the thin film using a photosensitive material, an etching process for removing the thin film at the selectively exposed portion to form a pattern, and other substrate treatment processes are performed. A thin film can be formed on the substrate by these substrate treatment processes.

[0003] Here, in a substrate processing method according to the prior art, when a third thin film layer is formed only on a first thin film layer of a first thin film layer and a second thin film layer formed on a substrate, a deposition process is performed to form the third thin film layer on both the first thin film layer and the second thin film layer, and then an etching process is repeatedly performed to etch only the portion of the third thin film layer formed on the second thin film layer, thereby forming the third thin film layer only on the first thin film layer.

[0004] Therefore, in the conventional substrate processing method, when an additional thin film layer is selectively formed on only some of the thin film layers among a plurality of thin film layers formed on the substrate, a problem occurs in that process efficiency is reduced. This problem is further exacerbated by the recent development of semiconductor devices, displays, solar cells, etc., which are not only miniaturized but also thinner. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been devised to solve the above-mentioned problems, and aims to provide a substrate processing method that can improve the efficiency of a process of selectively forming additional thin film layers only on some of a plurality of thin film layers formed on a substrate. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems, the present invention may include the following configurations.

[0007] A substrate processing method according to the present invention is a method for processing a substrate having an insulating layer and an electrode layer formed thereon, and may include a plasma processing step of performing a plasma processing on the substrate using a processing gas containing fluorine (F), a selective adsorption step of injecting a source gas containing a high dielectric constant (High-K) material onto the substrate after the plasma processing step to adsorb the high dielectric constant material only onto the electrode layer, and a selective deposition step of injecting a reaction gas onto the substrate after the selective adsorption step to deposit a high dielectric constant layer only onto the electrode layer. Effect of the Invention

[0008] According to the present invention, the following effects can be obtained.

[0009] The present invention is embodied such that a high dielectric layer is formed only on the electrode layer without an etching process for removing the high dielectric layer from the insulating layer by preventing the formation of a high dielectric layer on the insulating layer through a plasma treatment on a substrate on which an insulating layer and an electrode layer are formed, thereby improving the efficiency of a process for forming a high dielectric layer only on the electrode layer among the insulating layer and the electrode layer.

[0010] The present invention can omit the etching process for removing the high dielectric layer from the insulating layer, thereby increasing the productivity of a substrate in which a high dielectric layer is formed only on an electrode layer through a reduction in process time. [Brief description of the drawings]

[0011] [Figure 1] 1 is a schematic configuration diagram showing an example of a substrate processing apparatus in which a substrate processing method according to the present invention is performed; [Diagram 2] 1 is a schematic side cross-sectional view of an injection section that injects gas in an example of a substrate processing apparatus for performing a substrate processing method according to the present invention; [Diagram 3] 1 is a schematic side cross-sectional view of an injection section that injects gas in an example of a substrate processing apparatus for performing a substrate processing method according to the present invention; [Figure 4] 1 is a schematic flow chart of a substrate processing method according to the present invention. [Diagram 5] 1 is a schematic flow chart of a substrate processing method according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a substrate processing method according to the present invention will be described in detail with reference to the accompanying drawings.

[0013] In describing embodiments of the present invention, when a structure is described as being formed "on" or "under" another structure, such substrate should be interpreted to include cases where the structures are in contact with each other, as well as cases where a third structure is interposed between the structures.

[0014] 1 to 3, the substrate processing method according to the present invention is to perform a processing step on a substrate S. The substrate S may be a silicon substrate, a glass substrate, a metal substrate, or the like. An insulating layer and an electrode layer are formed on the substrate S. In this case, the substrate processing method according to the present invention may perform a processing step on the substrate S on which the insulating layer and the electrode layer are formed. For example, the insulating layer may be manufactured using silicon nitride (SiN), and the electrode layer may be manufactured using titanium nitride (TiN).

[0015] The substrate processing method according to the present invention can be performed through a substrate processing apparatus 1. Before describing an embodiment of the substrate processing method according to the present invention, the substrate processing apparatus 1 will be described in detail as follows.

[0016] 1 to 3, the substrate processing apparatus 1 may include a chamber 2, a substrate support unit 3, and an ejection unit 4. The ... chamber 2 may include a substrate support unit 3 and an ejection unit 4.

[0017] The chamber 2 provides a processing space 100. In the processing space 100, a processing process for the substrate S may be performed. The processing space 100 may be disposed inside the chamber 2. The chamber 2 may be coupled with an exhaust port (not shown) for exhausting gas from the processing space 100. The substrate support unit 3 and the spray unit 4 may be disposed inside the chamber 2.

[0018] The substrate support 3 supports the substrate S. The substrate support 3 may support one substrate S or multiple substrates S. When multiple substrates S are supported on the substrate support 3, a process may be performed on the multiple substrates S at once to manufacture a thin film on each of the substrates S. The substrate support 3 may be coupled to the chamber 2. The substrate support 3 may be disposed inside the chamber 2.

[0019] The jet unit 4 jets gas toward the substrate support 3. The jet unit 4 may be connected to a gas storage unit 40. In this case, the jet unit 4 may jet the gas supplied from the gas storage unit 40 toward the substrate support 3. The jet unit 4 may be disposed inside the chamber 2. The jet unit 4 may be disposed facing the substrate support 3. The jet unit 4 may be disposed above the substrate support 3. The processing space 100 may be disposed between the jet unit 4 and the substrate support 3. The jet unit 4 may be coupled to a lead (not shown). The lead may be coupled to the chamber 2 to cover an upper portion of the chamber 2.

[0020] The ejection unit 4 may include a first gas passage 4a and a second gas passage 4b.

[0021] The first gas passage 4a is for injecting a first gas. One side of the first gas passage 4a may be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the first gas passage 4a may be connected to the processing space 100. Thus, the first gas supplied from the gas storage unit 40 may flow along the first gas passage 4a and then be injected into the processing space 100 through the first gas passage 4a. The first gas passage 4a may function as a passage through which the first gas flows and also as an injection port for injecting the first gas into the processing space 100.

[0022] The second gas passage 4b ​​is for injecting a second gas. The second gas and the first gas may be different gases. For example, when the first gas is a source gas, the second gas may be a reactant gas. One side of the second gas passage 4b ​​may be connected to the gas storage unit 40 via a pipe, a hose, or the like. The other side of the second gas passage 4b ​​may be connected to the processing space 100. Thus, the second gas supplied from the gas storage unit 40 may flow along the second gas passage 4b ​​and then be injected into the processing space 100 through the second gas passage 4b. The second gas passage 4b ​​may function as a passage for the flow of the second gas and as an injection port for injecting the second gas into the processing space 100.

[0023] The second gas passage 4b ​​and the first gas passage 4a may be arranged to be spatially separated from each other. Thus, the second gas supplied from the gas storage unit 40 to the second gas passage 4b ​​may be injected into the processing space 100 without passing through the first gas passage 4a. The first gas supplied from the gas storage unit 40 to the first gas passage 4a may be injected into the processing space 100 without passing through the second gas passage 4b. The second gas passage 4b ​​and the first gas passage 4a may inject gas toward different portions of the processing space 100.

[0024] For example, as shown in FIG. 2, the ejection portion 4 may include a first plate 41 and a second plate .

[0025] The first plate 41 is disposed above the second plate 42. The first plate 41 and the second plate 42 may be disposed apart from each other. A plurality of first gas holes 411 may be formed in the first plate 41. The plurality of first gas holes 411 may function as a passage through which the first gas flows. The plurality of first gas holes 411 may belong to the first gas passage 4a. A plurality of second gas holes 412 may be formed in the first plate 41. The plurality of second gas holes 412 may function as a passage through which the second gas flows. The plurality of second gas holes 412 may belong to the second gas passage 4b. A plurality of protruding members 413 may be coupled to the first plate 41. The plurality of protruding members 413 may protrude from a lower surface of the first plate 41 toward the second plate 42. Each of the plurality of first gas holes 411 may be formed by penetrating the first plate 41 and the plurality of protruding members 413.

[0026] A plurality of openings 421 may be formed in the second plate 42. The plurality of openings 421 may be formed penetrating the second plate 42. The plurality of openings 421 may be disposed at positions corresponding to the plurality of protruding members 413, respectively. Thus, as shown in FIG. 2, the plurality of protruding members 413 may be formed to have a length disposed to be inserted into each of the plurality of openings 421. Although not shown, the plurality of protruding members 413 may be formed to have a length disposed above each of the plurality of openings 421. The plurality of protruding members 413 may be formed to have a length protruding downward from the second plate 42. The plurality of second gas holes 412 may be disposed to inject gas toward an upper surface of the second plate 42.

[0027] The injection unit 4 may generate plasma using the second plate 42 and the first plate 41. In this case, a plasma power source such as RF power may be applied to the first plate 41, and the second plate 42 may be grounded. The first plate 41 may be grounded, and a plasma power source may be applied to the second plate 42.

[0028] As shown in FIG. 3, the second plate 42 may have a plurality of first openings 422 and a plurality of second openings 423 formed therein.

[0029] The first openings 422 may be formed through the second plate 42. The first openings 422 may be connected to the first gas holes 411, respectively. In this case, the protruding members 413 may be disposed to contact an upper surface of the second plate 42. The first gas may be injected into the processing space 100 through the first gas holes 411 and the first openings 422. The first gas holes 411 and the first openings 422 may belong to the first gas passage 4a.

[0030] The second openings 423 may be formed through the second plate 42. The second openings 423 may be connected to a buffer space 43 disposed between the first plate 41 and the second plate 42. The second gas may be injected into the processing space 100 through the second gas holes 412, the buffer space 43, and the second openings 423. The second gas holes 412, the buffer space 43, and the second openings 423 may belong to the second gas passage 4b.

[0031] The substrate processing method according to the present invention may be performed through the substrate processing apparatus 1. Although not shown, the substrate processing method according to the present invention may be performed through a substrate processing system including a plurality of the substrate processing apparatuses 1. In this case, at least one of the substrate processing apparatuses 1 may perform a surface treatment using an OEC (Oxide Elimination Chamber). At least one of the substrate processing apparatuses 1 may perform an In-Cycle Plasma Treatment using an ICP (Inductively Coupled Plasma). At least one of the substrate processing apparatuses 1 may perform a deposition process using ALD (Atomic Layer Deposition), CVD (Chemical Vapor Deposition), etc. The substrate processing system may be implemented as a cluster type in which the substrate processing apparatuses 1 are arranged around a transfer chamber. The substrate processing system may be implemented as an in-line type in which the substrate processing apparatuses 1 are arranged along the longitudinal direction of the transfer chamber. The substrate processing system may be implemented as a hybrid type in which a plurality of transfer chambers are connected in-line and the plurality of substrate processing apparatuses 1 are arranged around each of the transfer chambers.

[0032] 1 to 4, the substrate processing method according to the present invention can deposit a high-k layer made of a high-k material only on the electrode layer by performing a processing process on the substrate S on which the insulating layer and the electrode layer are formed. To this end, the substrate processing method according to the present invention can include a plasma processing step S10, a selective adsorption step S20, and a selective deposition step S30.

[0033] 1 to 4, the plasma treatment step S10 performs a plasma treatment on the substrate S using a treatment gas containing fluorine (F). The plasma treatment step S10 can prevent the high dielectric constant substance from being adsorbed onto the insulating layer by the plasma treatment. The plasma treatment step S10 can reduce the adsorption rate of the high dielectric constant substance to the insulating layer by the plasma treatment.

[0034] In this way, the substrate processing method according to the present invention is embodied such that the high dielectric layer is formed only on the electrode layer without an etching process for removing the high dielectric layer from the insulating layer by preventing the high dielectric layer from being formed on the insulating layer by the plasma processing. As a result, the substrate processing method according to the present invention can improve the efficiency of the process of forming the high dielectric layer only on the electrode layer among the insulating layer and the electrode layer. In addition, the substrate processing method according to the present invention can omit the etching process for removing the high dielectric layer from the insulating layer, thereby shortening the process time and thereby increasing the productivity of the substrate S in which the high dielectric layer is formed only on the electrode layer.

[0035] When the insulating layer made of silicon nitride (SiN) and the electrode layer made of titanium nitride (TiN) are formed on the substrate S, the plasma treatment step S10 may perform plasma treatment using a treatment gas containing sulfur hexafluoride (SF6). As a result, the plasma treatment step S10 can prevent the high dielectric constant material from being adsorbed on the insulating layer. In this case, the plasma treatment step S10 may form a blocking layer on the insulating layer that blocks the adsorption of the high dielectric constant material by performing plasma treatment on the substrate S using a treatment gas containing sulfur hexafluoride (SF6). The blocking layer can block the adsorption of the high dielectric constant material by being formed of a Si-F thin film containing silicon (Si) and fluorine (F) on the insulating layer. Meanwhile, the insulating layer has been described as being made of silicon nitride (SiN), but is not limited thereto. When the insulating layer contains a material such as silicon (Si) that is more reactive to fluorine (F) than the material constituting the electrode layer, it may be manufactured by containing other materials in addition to nitrogen (N).

[0036] The plasma treatment step S10 may form the blocking layer only on the insulating layer by the plasma treatment, and may not form the blocking layer on the electrode layer. In this case, the material constituting the electrode layer may have a lower reactivity with fluorine (F) than the material constituting the insulating layer. Also, the material constituting the electrode layer may have a higher reactivity with the high dielectric constant material than fluorine (F).

[0037] The plasma processing step S10 may involve performing plasma processing on the substrate S by ICP discharge. In this case, the plasma processing step S10 may be performed by a substrate processing apparatus 1 that performs in-cycle plasma treatment using ICP, among the substrate processing apparatuses 1 included in the substrate processing system.

[0038] 1 to 4, the selective adsorption step S20 injects a source gas containing the high dielectric constant material onto the substrate S on which the plasma treatment step S10 has been performed. Since the plasma treatment step S10 prevents the high dielectric constant layer from being formed on the insulating layer, the selective adsorption step S20 can adsorb the high dielectric constant material only onto the electrode layer. That is, the selective adsorption step S20 can adsorb the high dielectric constant material only onto the electrode layer using a selectivity. Therefore, the substrate processing method according to the present invention can improve the efficiency of the process of forming the high dielectric constant layer only on the electrode layer.

[0039] The selective adsorption step S20 may be performed by injecting a source gas containing niobium oxide. In this case, niobium (Nb) may correspond to the high dielectric constant material. Niobium (Nb) contained in the source gas cannot be adsorbed on the insulating layer due to fluorine (F) present only on the insulating layer, and can be adsorbed only on the electrode layer. The selective adsorption step S20 may inject a source gas containing niobium monoxide (NbO). The selective adsorption step S20 may inject a source gas containing niobium oxide composed of NbxOy in addition to niobium monoxide (NbO). Here, x and y are integers greater than 0 and may be the same value or different values.

[0040] The selective adsorption step S20 may be performed by injecting a source gas containing a high dielectric constant material onto the substrate S through the first gas passage 4a of the injector 4. In the case of the injector 4 as shown in FIG. 2, the source gas containing a high dielectric constant material may be injected onto the substrate S through the first gas holes 411 and the openings 421. In the case of the injector 4 as shown in FIG. 3, the source gas containing a high dielectric constant material may be injected onto the substrate S through the first gas holes 411 and the openings 422.

[0041] The selective adsorption step S20 may be embodied so that niobium (Nb) is more smoothly adsorbed only on the electrode layer by adjusting the injection time of the source gas containing niobium oxide. In this case, the selective adsorption step S20 may inject the source gas containing niobium oxide for an injection time that is longer than a first adsorption time for niobium (Nb) to be adsorbed on the electrode layer and shorter than a second adsorption time for niobium (Nb) to be adsorbed on the insulating layer. Thus, the selective adsorption step S20 prevents niobium (Nb) from being adsorbed on the insulating layer and allows niobium (Nb) to be adsorbed on the electrode layer by adjusting the injection time of the source gas containing niobium oxide. Therefore, the substrate processing method according to the present invention can further improve the quality of the substrate S in which the high dielectric constant layer is deposited only on the electrode layer.

[0042] 1 to 4, the selective deposition step S30 deposits a high dielectric constant layer only on the electrode layer by injecting a reactive gas onto the substrate S on which the selective adsorption step S20 has been performed. The reactive gas may include a material that reacts with the high dielectric constant material adsorbed on the electrode layer. For example, the reactive gas may be a reactive gas including ozone (O3).

[0043] The selective deposition step S30 may be performed by injecting the reaction gas onto the substrate S through the second gas passage 4b ​​of the injection unit 4. In the case of the injection unit 4 as shown in FIG. 2, the reaction gas may be injected onto the substrate S through the second gas holes 412 and the openings 421. In the case of the injection unit 4 as shown in FIG. 3, the reaction gas may be injected onto the substrate S through the second gas holes 412, the buffer space 43, and the second openings 423.

[0044] 1 to 5, a substrate processing method according to the present invention may include a purging step S40.

[0045] The purge step S40 injects a purge gas onto the substrate S. The purge step S40 can purge gas that remains on the substrate S and cannot be adsorbed or deposited thereon. The purge step S40 can inject an inert gas such as argon (Ar) or nitrogen (N2) onto the substrate S as a purge gas.

[0046] The purge step S40 may be performed after the selective adsorption step S20 is performed. In this case, the purge step S40 may inject a purge gas onto the substrate S on which the selective adsorption step S20 is performed. In this way, the source gas that is not adsorbed to the substrate S and remains thereon may be purged.

[0047] The purge step S40 can be embodied so that niobium (Nb) is more smoothly adsorbed only on the electrode layer by adjusting the timing of injection of the purge gas. In this case, the purge step S40 can inject the purge gas onto the substrate S before the adsorption time for niobium (Nb) to be adsorbed on the insulating layer has elapsed from the time when the source gas including niobium oxide is injected through the selective adsorption step S20. Thus, the purge step S40 can prevent niobium (Nb) from being adsorbed on the insulating layer by purging before niobium (Nb) is adsorbed on the insulating layer. In this case, the purge step S40 can inject the purge gas onto the substrate S after the adsorption time for niobium (Nb) to be adsorbed on the electrode layer has elapsed from the time when the source gas including niobium oxide is injected through the selective adsorption step S20. Therefore, the purge step S40 prevents niobium (Nb) from being adsorbed on the insulating layer and allows niobium (Nb) to be adsorbed on the electrode layer by adjusting the timing of injecting the purge gas. Therefore, the substrate processing method according to the present invention can further improve the quality of the substrate S in which niobium (Nb) is deposited only on the electrode layer.

[0048] The purge step S40 may be performed after at least one of the plasma treatment step S10, the selective adsorption step S20, and the selective deposition step S30 has been performed. In this case, the purge step S40 may include a first purge step S41 of injecting a purge gas onto the substrate S after the selective adsorption step S20 has been performed. The selective deposition step S30 may be performed after the first purge step S41 has been performed. The purge step S40 may include a second purge step S42 of injecting a purge gas onto the substrate S after the selective deposition step S30 has been performed. After the second purge step S42 has been performed, the plasma treatment step S10 may be re-performed. The purge step S40 may include a third purge step S43 of injecting a purge gas onto the substrate S after the plasma treatment step S10 has been performed. The selective adsorption step S20 may be performed after the third purge step S43 has been performed. The substrate processing method according to the present invention may include at least one of the first purge step S41, the second purge step S42, and the third purge step S43.

[0049] 1 to 5, a substrate processing method according to the present invention may include a surface processing step S50.

[0050] The surface treatment step S50 performs a surface treatment on the substrate S. The surface treatment step S50 can be performed before the plasma treatment step S10 is performed. The surface treatment step S50 can remove impurities from at least one of the insulating layer and the electrode layer by performing a surface treatment on the substrate S through an OEC. In this case, the surface treatment step S50 can be performed by a substrate processing apparatus 1 that performs a surface treatment using an OEC, among a plurality of substrate processing apparatuses 1 included in the substrate processing system.

[0051] After the surface treatment step S50, the plasma treatment step S10 may be performed. Thus, the substrate processing method according to the present invention can generate a selectivity of a high dielectric constant material for the electrode layer and the insulating layer through the surface treatment using OEC and the in-cycle plasma treatment using ICP. In this case, the surface treatment step S50 and the plasma treatment step S10 can be implemented as a selectivity forming process.

[0052] The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it will be apparent to those having ordinary skill in the art to which the present invention pertains that various substitutions, modifications and alterations are possible within the scope not departing from the technical idea of ​​the present invention.

Claims

1. A processing method for a substrate on which an insulating layer and an electrode layer are formed, comprising the steps of: a plasma processing step of performing a plasma processing on the substrate using a processing gas containing fluorine (F); a selective adsorption step of injecting a source gas containing a high dielectric constant (High-K) material onto the substrate after the plasma treatment step to adsorb the high dielectric constant material only onto the electrode layer; a selective deposition step of depositing a high dielectric constant layer only on the electrode layer by injecting a reactive gas onto the substrate on which the selective adsorption step has been performed.

2. The plasma treatment step is performed by applying sulfur hexafluoride (SF) to the substrate on which the insulating layer made of silicon nitride (SiN) and the electrode layer made of titanium nitride (TiN) are formed. ６ 2. The method according to claim 1, wherein the plasma processing is performed using a processing gas containing a nitrogen atom or a nitrogen atom.

3. The plasma treatment step may be performed using sulfur hexafluoride (SF ６ 2. The method according to claim 1, further comprising the steps of: performing plasma processing on the substrate using a processing gas containing a high dielectric constant material; and forming a barrier layer on the insulating layer for blocking adsorption of a high dielectric constant material.

4. 4. The substrate processing method according to claim 1, wherein the selective adsorption step comprises injecting a source gas containing niobium oxide.

5. 4. The substrate processing method according to claim 1, wherein the selective adsorption step comprises injecting a source gas containing niobium monoxide (NbO).

6. 5. The substrate processing method according to claim 4, wherein the selective adsorption step comprises injecting a source gas containing niobium oxide for an injection time that is longer than a first adsorption time during which niobium is adsorbed on the electrode layer and shorter than a second adsorption time during which niobium is adsorbed on the insulating layer.

7. a purge step of injecting a purge gas onto the substrate on which the selective adsorption step has been performed; 5. The method of claim 4, wherein the purging step comprises injecting a purge gas onto the substrate before an adsorption time during which niobium is adsorbed onto the insulating layer has elapsed since a source gas containing niobium oxide was injected during the selective adsorption step.

8. The selective deposition step may include ozone (O ３ 5. The method according to claim 4, further comprising the step of spraying a reactive gas containing:

9. A purge step includes injecting a purge gas onto the substrate; 2. The substrate processing method of claim 1, wherein the purging step is performed after at least one of the plasma processing step, the selective adsorption step, and the selective deposition step is performed.

10. 2. The substrate processing method according to claim 1, further comprising a surface processing step of performing a surface treatment on the substrate before the plasma processing step is performed.

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