Optoelectronic module and method for operating the same - Patents.com

Abstract

An optoelectronic module is disclosed, comprising a semiconductor component (10) configured to emit electromagnetic radiation, a distribution structure (20) comprising a plurality of distribution elements (210), at least one input waveguide (201), and a plurality of output waveguides (202), and a plurality of conversion structures (30). Electromagnetic radiation emitted from the semiconductor component (10) enters the distribution structure (20) through the input waveguide (201). The electromagnetic radiation exits the distribution structure (20) through the output waveguides (202). A conversion structure (30) is disposed downstream of each output waveguide (202). A method of operation of the optoelectronic module (1) is further disclosed.

Description

[Technical field]

[0001] An optoelectronic module and a method of operating the optoelectronic module are disclosed. The optoelectronic module is specifically configured to generate electromagnetic radiation, for example light perceivable by the human eye. Summary of the Invention [Problem to be solved by the invention]

[0002] One of the problems to be solved is to identify an optoelectronic module having multiple output waveguides that has particularly high brightness.

[0003] A further problem to be solved is to identify a method of operating an optoelectronic module that allows for easy control of multiple output waveguides. [Means for solving the problem]

[0004] These problems are solved by a device and a method according to the independent claims. Advantageous and further embodiments of the device are the subject of the dependent claims and will become further apparent from the following description and the drawings.

[0005] According to at least one embodiment, the optoelectronic module comprises semiconductor components configured to emit electromagnetic radiation, preferably with a spectral distribution having a dominant wavelength within the visible spectral range, hereinafter the dominant wavelength being the wavelength of the electromagnetic radiation at which the spectrum of the radiation is at a global maximum.

[0006] The semiconductor component comprises, for example, at least one semiconductor emitter. In particular, the semiconductor emitter comprises a first region of a first electrical conductivity, a second region of a second electrical conductivity, and an active region configured to emit electromagnetic radiation. Advantageously, the first electrical conductivity is different from the second electrical conductivity. For example, the first region and the second region are each formed of a doped semiconductor material. In particular, the active region has a pn junction, a double heterostructure, a single quantum well structure (SQW), a multi-quantum well structure (MQW) for generating emitted light. The semiconductor emitter here is, for example, a light emitting diode, in particular a luminaire or a laser diode.

[0007] According to at least one embodiment, the optoelectronic module comprises a distribution structure comprising a number of distribution elements, at least one input waveguide and a number of output waveguides. The distribution structure has, for example, a planar waveguide structure. Preferably, the distribution elements, the at least one input waveguide and the output waveguide are monolithically integrated on a substrate. This allows a particularly compact design and advantageously low optical coupling losses.

[0008] In particular, the distribution structure is configured to distribute electromagnetic radiation from at least one input waveguide to a number of output waveguides in a predetermined intensity ratio. Thus, electromagnetic radiation coupled into the distribution structure can be emitted from the output waveguides in a desired ratio. The distribution elements are provided, for example, in the form of optical switches. Preferably, each distribution element comprises an input and at least two outputs. In particular, each distribution element influences the distribution of the radiation intensity of electromagnetic radiation incident via the input to the outputs.

[0009] According to at least one embodiment, the optoelectronic module comprises a plurality of conversion structures. In particular, the conversion structures are configured to convert electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength different from the first wavelength. The conversion structures, for example, convert the incident electromagnetic radiation partially or completely. In particular, the conversion structures emit a mixed radiation by converting a portion of the electromagnetic radiation incident on the conversion structures. Advantageously, the mixed radiation gives an observer a white impression.

[0010] According to at least one embodiment of the optoelectronic module, electromagnetic radiation emitted by the semiconductor component enters the distribution structure through an input waveguide, which advantageously has a core region and a cladding region, the cladding region at least partially surrounding the core region, the core region advantageously having a higher refractive index than the cladding region.

[0011] According to at least one embodiment of the optoelectronic module, the electromagnetic radiation is output from the distribution structure through output waveguides. A desired distribution of the electromagnetic radiation can be set in the output waveguides. For example, the electromagnetic radiation is output in one output direction from each output waveguide. Preferably, the output directions of all output waveguides are aligned parallel to each other.

[0012] According to at least one embodiment of the optoelectronic module, a conversion structure is arranged downstream of each output waveguide, the arrangement of one conversion structure per output waveguide resulting in a particularly high contrast ratio between adjacent conversion structures.

[0013] According to at least one embodiment, the optoelectronic module comprises: a semiconductor component configured to emit electromagnetic radiation; a distribution structure comprising a plurality of distribution elements, at least one input waveguide, and a plurality of output waveguides; a plurality of conversion structures; Electromagnetic radiation emitted by the semiconductor component is incident on the distribution structure through the input waveguide; the electromagnetic radiation is output from the distribution structure through the output waveguide; A transformation structure is disposed downstream of each output waveguide.

[0014] The optoelectronic module described herein is based in particular on the following considerations: To produce a pixelated light source of high brightness, several individual semiconductor components can be arranged next to each other in an array. To emit white light, a converter element may be arranged downstream of each semiconductor component. However, in such a configuration, effective cooling of the semiconductor components and the converter elements becomes more difficult, since both generate waste heat during operation. This may limit the maximum achievable brightness of the individual semiconductor components. Furthermore, the precise arrangement of multiple semiconductor components as an array may be associated with increased manufacturing costs.

[0015] The optoelectronic module described herein utilizes, inter alia, the idea of ​​spatially separating the generation of electromagnetic radiation from the conversion of electromagnetic radiation. Moreover, by using a distribution structure, only one semiconductor component is required to control multiple emission areas. The electromagnetic radiation generated in the semiconductor component is coupled to the distribution structure, where it is distributed to multiple output waveguides. Each output waveguide is followed by a conversion structure that converts at least a portion of the electromagnetic radiation. Due to the spatial separation between the semiconductor component and the conversion structure, the two structures can be cooled separately. Thus, advantageously, the semiconductor component and the conversion structure can be operated at different operating temperatures. Moreover, multiple conversion structures can be controlled with one semiconductor component. Time-consuming adjustment of multiple semiconductor components in an array can be advantageously avoided.

[0016] According to at least one embodiment of the optoelectronic module, the distribution element is a passive wavelength-selective filter element. For example, the distribution element is designed as a Mach-Zehnder interferometer, a dielectric interference thin film filter, a waveguide grating router or a microring resonator. Advantageously, a passive distribution element does not require any additional control. The distribution element is configured to select the electromagnetic radiation according to its dominant wavelength. In particular, the distribution of the output characteristic of the distribution element can be set, for example, by an electric field that is constantly applied during operation in a beam splitter or by a phase displacement that is constantly set in a Mach-Zehnder interferometer. This makes it possible, for example, to compensate for variations related to the manufacture of the distribution element. In the following of this specification, a distribution element having such a static correction during operation is considered as a passive filter element, since it does not require active adjustment of the control during operation.

[0017] According to at least one embodiment of the optoelectronic module, the distribution element has a passband with a bandwidth of at most 2 nm, preferably at most 1 nm. In particular, the distribution element has a high radiation transmittance in the passband. For example, electromagnetic radiation outside the passband is reflected or absorbed by the distribution element. The low bandwidth allows an advantageous control of a large number of distribution elements using semiconductor components that emit band-limited electromagnetic radiation.

[0018] According to at least one embodiment of the optoelectronic module, the semiconductor component is configured to emit coherent radiation with a modulatable dominant wavelength. By modulating the dominant wavelength, the distribution of the electromagnetic radiation can be influenced by a wavelength-selective distribution structure. In particular, the semiconductor component comprises a laser component with a sampled grating and a distributed Bragg reflector (sample grating distributed Bragg reflector laser (SG-DBR) laser). Alternatively, the semiconductor component is formed by a laser component with an external cavity.

[0019] According to at least one embodiment of the optoelectronic module, the dominant wavelength of the electromagnetic radiation emitted by the semiconductor component can be modulated over a bandwidth of 25 nm, preferably 50 nm, particularly preferably 100 nm in the spectral range including a wavelength of 447 nm. Preferably, the semiconductor component emits coherent electromagnetic radiation. In particular, the semiconductor component emits electromagnetic radiation whose dominant wavelength is between 390 nm and 480 nm.

[0020] According to at least one embodiment of the optoelectronic module, the dominant wavelength can be modulated at a frequency of at least 500 Hz, preferably at least 1 kHz, particularly preferably at least 2 kHz. A high modulation frequency can advantageously shorten the time span during which a particular dominant wavelength can be emitted. In particular, a high modulation frequency also increases the number of different dominant wavelengths that can be provided in a given display period. As a result, the number of controllable distribution elements and output waveguides can be increased.

[0021] In the following, the display period refers to the period of time during which the electromagnetic radiation of the desired intensity distribution is provided at the output waveguide. Advantageously, the display period is short enough that no flickering impression is generated for a human observer. For example, the display period is at most 1 / 30 seconds, preferably at most 1 / 60 seconds, and particularly preferably at most 1 / 100 seconds.

[0022] According to at least one embodiment of the optoelectronic module, the semiconductor component comprises at least two semiconductor emitters, a first semiconductor emitter configured to emit electromagnetic radiation having a variable dominant wavelength in a first spectral range and a second semiconductor emitter configured to emit electromagnetic radiation having a variable dominant wavelength in a second spectral range. In particular, the first dominant wavelength is different from the second dominant wavelength. For example, the spectral ranges of the first and second electromagnetic radiation do not overlap. By using multiple semiconductor emitters, the semiconductor component can emit electromagnetic radiation in a wider bandwidth.

[0023] According to at least one embodiment of the optoelectronic module, the input waveguides are assigned one for each semiconductor emitter. Thus, advantageously, the number of distribution elements required can be reduced. For example, a first semiconductor emitter is assigned a first number of output waveguides and a second semiconductor emitter is assigned a second number of output waveguides. Advantageously, the first dominant wavelength of the first semiconductor emitter is identical to the second dominant wavelength of the second semiconductor emitter.

[0024] According to at least one embodiment of the optoelectronic module, each output waveguide is assigned exactly one distribution element. Advantageously, as many distribution elements are required as there are output waveguides. In particular, each distribution element is configured to control exactly one output waveguide.

[0025] According to at least one embodiment of the optoelectronic module, the distribution elements are active and controllable coupling elements. Active distribution elements are advantageously particularly precisely controllable. For example, the distribution elements are designed as controllable directional couplers or as controllable directional couplers with phase inversion. In particular, each distribution element comprises a Mach-Zehnder interferometer. Advantageously, the distribution elements are designed as electro-optically controllable components. In other words, the intensity distribution at the output of the distribution elements can be adjusted by means of an electrical control signal. In particular, a control line is assigned to each distribution element.

[0026] According to at least one embodiment of the optoelectronic module, the distribution element can be modulated at a frequency of at least 0.5 GHz, preferably 1 GHz, particularly preferably 10 GHz. Modulation of the distribution element is defined hereinafter as a complete switching process. A particularly high modulation frequency advantageously increases the number of controllable output waveguides within a given display period.

[0027] According to at least one embodiment of the optoelectronic module, the semiconductor component is configured to emit coherent radiation having a dominant wavelength in the blue spectral range, in particular a dominant wavelength between 450 nm and 475 nm, in particular a dominant wavelength in the blue spectral range being suitable for generating white mixed light.

[0028] According to at least one embodiment of the optoelectronic module, each conversion structure comprises an output coupling element, for example an optical grating coupler, which allows for highly efficient coupling of electromagnetic radiation from the waveguide into the field.

[0029] According to at least one embodiment of the optoelectronic module, each conversion structure comprises a diffusing element. The diffusing element is preferably arranged downstream of the output coupling element. In particular, the diffusing element homogenizes the electromagnetic radiation leaving the output coupling element. For example, the diffusing element has a large number of small scattering centers. When parallel light rays hit different points of the diffusing element, they are distributed in different directions, thereby generating diffuse light.

[0030] According to at least one embodiment of the optoelectronic module, an input coupling element is assigned to each input waveguide, the input coupling element being, for example, a grating coupler, and in particular the input coupling element can improve the coupling efficiency between the semiconductor component and the input waveguide.

[0031] According to at least one embodiment of the optoelectronic module, the semiconductor component is formed of III / V compound semiconductor material. III / V compound semiconductor material has at least one element from group 3, such as In, Ga, Al, B, and one element from group 5, such as N, P, As. In particular, the term "III / V compound semiconductor material" includes the group of binary, ternary or quaternary compounds that include at least one element from group 3 and at least one element from group 5, including, for example, nitride and phosphide compound semiconductors. Such binary, ternary or quaternary compounds may also have, for example, one or more dopants and additional components. Preferably, at least the active region of the semiconductor component is formed of III / V compound semiconductor material. In particular, the semiconductor component also includes other materials, for example in the form of plating and / or carrier materials.

[0032] Preferably, the semiconductor component is based on a phosphide compound semiconductor material. In this specification, "based on a phosphide compound semiconductor material" means that the semiconductor component or at least a part of it, particularly preferably at least the active region and / or the growth substrate wafer, is preferably made of Al n Ga m In 1-n-m P or As n Ga m In 1-n-m P (0≦n≦1, 0≦m≦1, and n+m≦1). The material does not necessarily have to have a mathematically exact composition according to the above formula. The semiconductor component can therefore contain additional components and can have one or more dopants. However, for simplicity, the above formula contains only the key components of the crystal lattice (Al or As, Ga, In, P), which may be partially replaced by small amounts of other substances. For example, the semiconductor component is formed of InGaAsP.

[0033] According to at least one embodiment of the optoelectronic module, the distribution structure is made of one of the following materials: III / V compound semiconductor materials, silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, gallium nitride. Preferably, the distribution structure is made of the same material as the semiconductor components. Advantageously, no refractive index difference occurs between the semiconductor components and the distribution structure.

[0034] According to at least one embodiment, the optoelectronic module comprises at least 10, preferably at least 30, particularly preferably at least 100 output waveguides. The increased number of output waveguides increases the achievable resolution of the optoelectronic module. For example, the optoelectronic module comprises up to 200 output waveguides.

[0035] A method of operating the optoelectronic module is further disclosed. In particular, the optoelectronic module can be operated by the methods described herein. This means that all features disclosed with respect to the method of operating the optoelectronic module are also disclosed with respect to the optoelectronic module, and vice versa.

[0036] According to at least one embodiment of the method for operating an optoelectronic module, the distribution element is provided as a passive wavelength-selective filter element. For example, the distribution element is designed as a Mach-Zehnder interferometer, a dielectric interference thin film filter, a waveguide grating router or a microring resonator. Advantageously, a passive distribution element does not require any additional control. The distribution element selects the electromagnetic radiation according to its dominant wavelength. In particular, the distribution element transmits electromagnetic radiation having a dominant wavelength within the passband and absorbs or reflects electromagnetic radiation in a spectral range outside the passband.

[0037] According to at least one embodiment of the method for operating an optoelectronic module, the semiconductor components emit electromagnetic radiation having various discrete dominant wavelengths. In particular, the discrete dominant wavelengths each correspond to a passband of a distribution element. The dominant wavelength of the electromagnetic radiation determines through which distribution element the electromagnetic radiation can be transmitted. In other words, a distribution element is assigned to each dominant wavelength.

[0038] According to at least one embodiment of a method for operating an optoelectronic module, the different dominant wavelengths are each emitted at a time dependent on the dominant wavelength during a display period, the emission of electromagnetic radiation of a particular dominant wavelength at a time dependent on the dominant wavelength enabling a desired intensity distribution of the electromagnetic radiation in the output waveguide.

[0039] According to at least one embodiment of the method for operating an optoelectronic module, the optical output power of the semiconductor component is constant during the display period, which allows a particularly simple control of the semiconductor component.

[0040] According to at least one embodiment of the method of operating the optoelectronic module, different dominant wavelengths are output during a display period that is in each case of the same duration. Advantageously, the dominant wavelength can be changed at a constant rate.

[0041] According to at least one embodiment of the method of operating an optoelectronic module, the optical output power of the semiconductor component is modulated during the display period in synchronization with the modulation of the dominant wavelength, so that a desired intensity distribution in the output waveguide can be achieved by modulating the output power of the semiconductor component.

[0042] According to at least one embodiment of the method for operating an optoelectronic module, the distribution element (210) is provided as an active and controllable coupling element. An active distribution element is advantageously particularly precisely controllable. For example, the distribution element is designed as a controllable directional coupler or as a controllable directional coupler with phase inversion. In particular, each distribution element comprises a Mach-Zehnder interferometer. Advantageously, the distribution element is designed as an electro-optically controllable component. In other words, the intensity distribution at the output of the distribution element is set by an electrical control signal. In particular, a control line is assigned to each distribution element.

[0043] In accordance with at least one embodiment of the method for operating an optoelectronic module, the semiconductor component emits electromagnetic radiation having a constant dominant wavelength, which allows a particularly simple design of the semiconductor component.

[0044] According to at least one embodiment of the method for operating an optoelectronic module, the optical output power of the semiconductor components is constant during the display period, which simplifies the control of the semiconductor components.

[0045] According to at least one embodiment of the method of operation of the optoelectronic module, the distribution element acts as a variably modulatable beam splitter whose distribution is constant over the display period. In particular, the distribution element is capable of distributing the optical power input to the distribution element to the output. The constant distribution over the display period reduces the minimum switching time requirements of the distribution element and simplifies the control.

[0046] According to at least one embodiment of the method of operation of the optoelectronic module, the distribution element acts as an optical switch and is switched multiple times during the display period. In the following of this document, a switch is understood to be a component that ideally has only two switching states. The distribution element can thus distribute all input electromagnetic radiation either to the first output or to the second output. This allows for a simplified control of the distribution element.

[0047] According to at least one embodiment of the method for operating an optoelectronic module, the optical output power of the semiconductor component is modulated synchronously with the distribution element during a display period, the modulation of the optical output power of the semiconductor component allowing the representation of a desired intensity distribution in the output waveguide when an optical switch is used as the distribution element.

[0048] The optoelectronic modules described herein are particularly suitable for use as pixelated light sources having high brightness, in particular as headlights in automobiles.

[0049] Further advantages and advantageous configurations as well as further embodiments of the optoelectronic module derive from the following exemplary embodiments shown in conjunction with the drawings, in which: [Brief description of the drawings]

[0050] [Figure 1] 1 is a schematic cross-sectional view of an optoelectronic module as described herein according to a first exemplary embodiment. [Diagram 2] 4 is a schematic cross-sectional view of an optoelectronic module as described herein according to a second exemplary embodiment. [Diagram 3] 13 is a schematic top view of an optoelectronic module as described herein according to a third exemplary embodiment. FIG. [Figure 4] FIG. 13 is a schematic top view of an optoelectronic module as described herein according to a fourth exemplary embodiment. [Diagram 5] FIG. 13 is a schematic perspective view of an optoelectronic module as described herein according to a fifth exemplary embodiment. [Figure 6] 1 is a control concept of an optoelectronic module as described herein according to a first exemplary embodiment. [Figure 7] 4 is a control concept of an optoelectronic module as described herein according to a second exemplary embodiment. [Figure 8] 1 is a schematic cross-sectional view of a transduction structure described herein according to a first exemplary embodiment. [Figure 9] 4 is a schematic cross-sectional view of a transduction structure described herein according to a second exemplary embodiment. [Figure 10] 11 is a schematic cross-sectional view of a transduction structure described herein according to a third exemplary embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view of a transduction structure described herein according to a fourth exemplary embodiment. [Figure 12] 13 is a schematic cross-sectional view of an optoelectronic module as described herein according to a sixth exemplary embodiment. [Figure 13A] 13 is a schematic top view of an optoelectronic module described herein according to a seventh exemplary embodiment. FIG. [Figure 13B] FIG. 13 is a schematic cross-sectional view of an optoelectronic module as described herein according to a seventh exemplary embodiment. [Figure 14] 13 is a schematic top view of an optoelectronic module described herein according to an eighth exemplary embodiment. FIG. [Figure 15] FIG. 13 is a schematic top view of an optoelectronic module described herein in accordance with a ninth exemplary embodiment. [Figure 16] A schematic cross-sectional view of an apparatus having multiple optoelectronic modules as described herein according to a tenth exemplary embodiment. [Figure 17]13 is a control concept of an optoelectronic module as described herein according to a third exemplary embodiment. [Figure 18] 13 is a control concept of an optoelectronic module as described herein according to a fourth exemplary embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0051] Elements having the same, similar or similar function are provided with the same reference numerals in the figures. The figures and the proportions of the elements shown therein are not treated as being to scale. Rather, individual elements may be shown exaggeratedly large in order to improve visibility and / or comprehension.

[0052] 1 is a schematic cross-sectional view of an optoelectronic module 1 as described herein according to a first exemplary embodiment. The optoelectronic module 1 comprises a semiconductor component 10 configured to emit electromagnetic radiation. The electromagnetic radiation preferably has a spectral distribution with a dominant wavelength in the visible spectral range.

[0053] Specifically, the semiconductor component 10 has a tunable dominant wavelength λ1 to λ n In particular, the semiconductor component 10 comprises a laser component with a sample grating and a distributed Bragg reflector (SG-DBR). Alternatively, the semiconductor component 10 is formed by a laser component with an external cavity.

[0054] The dominant wavelengths λ1 to λ of the electromagnetic radiation emitted by the semiconductor component 10 n can be modulated over a bandwidth of at least 25 nm, preferably over a bandwidth of at least 50 nm, particularly preferably over a bandwidth of at least 100 nm in the spectral range including the wavelength of 447 nm. n It emits electromagnetic radiation.

[0055] In addition, the dominant wavelengths λ1 to λ n can be modulated at a frequency of at least 500 Hz, preferably at least 1 kHz, particularly preferably at least 2 kHz. A high modulation frequency can advantageously shorten the time during which a particular dominant wavelength can be emitted. In particular, a high modulation frequency can also advantageously shorten the time during which the different dominant wavelengths λ1 to λ2 can be provided in a given display period TD. n Increase the number of.

[0056] Furthermore, the optoelectronic module 1 comprises at least one distribution structure 20 with a number of passive and wavelength-selective distribution elements 210, at least one input waveguide 201 and a number of output waveguides 202. The distribution structure 20 comprises a planar waveguide structure. This allows a particularly compact design and advantageously achieves low optical coupling losses. The distribution structure 20 is configured to distribute electromagnetic radiation from at least one input waveguide 201 to output waveguides 202 in a predefined intensity ratio. Electromagnetic radiation emitted by the semiconductor component 10 enters the distribution structure 20 through the input waveguide 201. The electromagnetic radiation then leaves the distribution structure 20 through the output waveguide 202. Exactly one distribution element 210 is assigned to each output waveguide 202. Advantageously, as many distribution elements 210 are required as there are output waveguides 202. Each distribution element 210 is configured to control exactly one output waveguide 202.

[0057] The distribution element 210 is designed as a Mach-Zehnder interferometer, a dielectric interference thin film filter, a waveguide grating router, or a micro-ring resonator. Advantageously, the passive distribution element 210 does not require any additional control. The distribution elements 210 are arranged to have respective dominant wavelengths λ1 to λ2. n In other words, each distribution element 210 is configured to select electromagnetic radiation according to a dominant wavelength λ1 to λ nor . The distribution element 210 has a spectral passband with a bandwidth of at most 2 nm, preferably at most 1 nm. In particular, the distribution element 210 has a high radiation transmittance in the passband. For example, the distribution element 210 reflects or absorbs electromagnetic radiation outside the passband. The low bandwidth allows an advantageous large number of distribution elements 210 to be controlled using semiconductor components 10 that emit band-limited electromagnetic radiation.

[0058] Furthermore, the optoelectronic module 1 comprises a number of conversion structures 30. The conversion structures 30 are arranged downstream of the distribution structure 20. The conversion structures 30 are configured to convert electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength different from the first wavelength. The conversion structures 30 for example bring about a partial or complete conversion of the incident electromagnetic radiation.

[0059] Each transformation structure 30 comprises an output coupling element 301, a diffusing element 302, and a transformation element 303. The output coupling element 301 is an optical grating coupler. A grating coupler can advantageously provide high efficiency coupling of electromagnetic radiation from a waveguide to a region.

[0060] The diffusing element 302 is disposed downstream of the output coupling element 301. In particular, the diffusing element 302 homogenizes the electromagnetic radiation exiting from the output coupling element 301. For example, the diffusing element 302 has many small scattering centers. When parallel light rays hit different points of the diffusing element 302, the parallel light rays are distributed in different directions, thus generating diffuse light.

[0061] The conversion element 303 comprises a conversion material, in particular in the form of a ceramic platelet. The diffusion element 302 is disposed between the conversion element 303 and the output coupling element 301.

[0062] The optical element 40 is disposed downstream of the conversion structure 30. The optical element 40 is radiation transmissive to the electromagnetic radiation emitted from the conversion structure 30. For example, the optical element is a projection lens.

[0063] 2 shows a schematic cross-sectional view of an optoelectronic module 1 as described herein according to a second exemplary embodiment. The optoelectronic module 1 comprises a semiconductor component 10 configured to emit electromagnetic radiation. The semiconductor component 10 is configured to emit coherent radiation having a dominant wavelength in the blue spectral range. In particular, the dominant wavelength is greater than or equal to 440 nm and less than or equal to 475 nm. Preferably, the dominant wavelength is less than or equal to 465 nm.

[0064] Furthermore, the optoelectronic module 1 comprises a distribution structure 20 with a number of distribution elements 210, at least one input waveguide 201 and a number of output waveguides 202. The distribution structure 20 comprises a planar waveguide structure, which allows a particularly compact design and advantageously achieves low optical coupling losses. The distribution structure 20 is configured to distribute electromagnetic radiation from the at least one input waveguide 201 to the output waveguides 202 in a predefined intensity ratio. Electromagnetic radiation emitted by the semiconductor component 10 enters the distribution structure 20 through the input waveguide 201. The electromagnetic radiation then leaves the distribution structure 20 through the output waveguide 202.

[0065] The distribution element 210 is an active and controllable coupling element. The active distribution element 210 is advantageously particularly precisely controllable. For example, the distribution element 210 is designed as a controllable directional coupler or as a controllable directional coupler with phase inversion. The controllable directional coupler with phase inversion is advantageously more tolerant to manufacturing variations.

[0066] In particular, each distribution element 210 comprises a Mach-Zehnder interferometer. Advantageously, the distribution elements 210 are designed as electro-optically controllable components. In other words, the intensity distribution at the output of the distribution elements 210 can be adjusted by means of an electrical control signal.

[0067] A control line 211 is assigned to each distribution element 210. The optoelectronic module 1 further comprises a control device 212 connected to the control lines 211. Via the control lines 211, each distribution element 210 can be controlled by the control device 212 independently of the other distribution elements 210. The control device can set the distribution ratio of each distribution element independently of one another by applying appropriate potentials.

[0068] The distribution element 210 can be modulated at a frequency of at least 0.5 GHz, preferably 1 GHz, particularly preferably 10 GHz. Modulation of the distribution element 210 is defined in the following as a complete switching process, i.e. a complete switching from the first output to the second output of the distribution element. A particularly high modulation frequency can advantageously increase the number of controllable output waveguides 202 within a given display period TD.

[0069] Furthermore, the optoelectronic module 1 comprises a number of conversion structures 30. The conversion structures 30 are arranged downstream of the distribution structure 20. The conversion structures 30 are configured to convert electromagnetic radiation of a first wavelength into electromagnetic radiation of a second wavelength different from the first wavelength. The conversion structures 30 for example bring about a partial or complete conversion of the incident electromagnetic radiation. Advantageously, the dominant wavelength of the semiconductor component 10 is selected to serve as an efficient pump wavelength of the conversion structures 30.

[0070] Each transformation structure 30 comprises an output coupling element 301, a diffusing element 302, and a transformation element 303. The output coupling element 301 is an optical grating coupler. A grating coupler can advantageously provide high efficiency coupling of electromagnetic radiation from a waveguide to a region.

[0071] The diffusing element 302 is disposed downstream of the output coupling element 301. In particular, the diffusing element 302 homogenizes the electromagnetic radiation exiting from the output coupling element 301. For example, the diffusing element 302 has many small scattering centers. When parallel light rays hit different points of the diffusing element 302, the parallel light rays are distributed in different directions, thus generating diffuse light.

[0072] The conversion element 303 comprises a conversion material, in particular in the form of a ceramic platelet. The diffusion element 302 is disposed between the conversion element 303 and the output coupling element 301.

[0073] The optical element 40 is disposed downstream of the conversion structure 30. The optical element 40 is radiation transmissive to the electromagnetic radiation exiting the conversion structure 30. For example, the optical element is a projection lens.

[0074] 3 shows a schematic top view of the optoelectronic module 1 described herein according to a third exemplary embodiment. The third exemplary embodiment essentially corresponds to the second exemplary embodiment shown in FIG. 2. The distribution structure 20, the conversion structure 30 and the input coupling element 2011 are arranged on a common carrier 60. The carrier 60 is formed, for example, of one of the following materials: III / V compound semiconductor materials, silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, gallium nitride.

[0075] The input coupling element 2011 is assigned to the input waveguide 201. The input coupling element 2011 is designed as a grid coupler. The semiconductor component 10 is optically connected to the input coupling element 2011 via the optical waveguide 50. In other words, the electromagnetic radiation from the semiconductor component 10 first enters the optical waveguide 50 and then is coupled from the optical waveguide 50 into the input waveguide 201 via the input coupling element 2011. In particular, the input coupling element 2011 can improve the coupling efficiency between the semiconductor component 10 and the input waveguide 201.

[0076] 4 shows a schematic top view of an optoelectronic module 1 as described herein according to a fourth exemplary embodiment. The fourth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in FIG. 3. In contrast to the third exemplary embodiment, the semiconductor component 10 is arranged on a carrier 60. This makes it possible to provide a particularly compact optoelectronic module 1.

[0077] 5 shows a schematic perspective cross-sectional view of an optoelectronic module 1 as described herein according to a fifth exemplary embodiment. The fifth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in FIG. 3. Also, a heat sink 70 is arranged on the rear side of the carrier 60. The heat sink 70 allows efficient dissipation of heat from the conversion structure 30. The heat sink 70 is formed of a material with a particularly high thermal conductivity, for example a metal or a ceramic.

[0078] Furthermore, a number of optical elements 40 are arranged downstream of the conversion structure 30. The optical elements 40 are designed for beam shaping. They are in particular made of a polymer with high radiation transparency, for example polymethylmethacrylate, abbreviated PMMA, or alternatively glass. Advantageously, the optical elements 40 cause collimation of the electromagnetic radiation emerging from the conversion structure 30.

[0079] 6 shows a control concept of an optoelectronic module 1 as described herein according to a first exemplary embodiment. An optoelectronic module 1 is controlled which comprises a semiconductor component 10 and a distribution structure 20. The semiconductor component 10 emits electromagnetic radiation with a certain dominant wavelength in the visible spectral range. The distribution structure 20 comprises a number of active and controllable distribution elements 210. Each distribution element 210 has an input and two outputs. Note that the outputs of the distribution elements 210 are uniquely labeled A1, A2, B1, B2, B3, B4.

[0080] The control concept shows the process of controlling all outputs A1, A2, B1, B2, B3 and B4 of the distribution element 210 and the optical output power of the semiconductor component 10 over a display period TD.

[0081] The display period TD indicates for what period the electromagnetic radiation of the desired intensity distribution is provided in the output waveguide 202. Advantageously, the display period TD is so short that no flickering impression is created for a human observer. For example, the display period TD is at most 1 / 30 seconds, preferably at most 1 / 60 seconds, and particularly preferably at most 1 / 100 seconds.

[0082] The distribution element 210 acts as an optical switch. In the display period TD, the distribution element 210 is switched multiple times. A value "1" means that this output is active and electromagnetic radiation is output at this output. A value "0" means that this output is not active and electromagnetic radiation is not output at this output. At a first time point in the display period TD, the outputs A1 and B1 of the distribution element 210 are active. Thus, electromagnetic radiation is emitted at the top output waveguide 202 and is output by the top conversion structure 30. The distribution element 210 is modulated at a frequency of at least 0.5 GHz, preferably at least 1 GHz, more preferably at least 10 GHz.

[0083] The optical output power of the semiconductor component 10 is modulated during the display period TD in synchronization with the distribution element 210. In this manner, selective control of the distribution element 210 allows each output waveguide 202 to be illuminated with a desired intensity distribution.

[0084] Fig. 7 shows a control concept of an optoelectronic module 1 as described herein according to a second exemplary embodiment. The structure of the electronic module 1 essentially corresponds to the controlled optoelectronic module 1 shown in Fig. 6. In contrast to the control concept shown in Fig. 6, the optical output power of the semiconductor component 10 is constant in the display period TD. The distribution element 210 acts as a variably modulatable beam splitter, the distribution of which is constant over the display period TD.

[0085] The first distribution element 210 with outputs A1 and A2 is controlled such that 50% of the emitted intensity is distributed to output A1 and 50% of the emitted intensity is distributed to output A2. The downstream distribution element with outputs B1 and B2 distributes 34% of the emitted intensity to output B1 and the remaining 66% of the emitted intensity to output B2. This results in a desired intensity distribution at the output waveguide 202.

[0086] Therefore, multiple switching operations of the distribution element 210 within the display period TD can be advantageously omitted. Furthermore, no modulation of the optical output power of the semiconductor component 10 is required. The semiconductor component 10 is in cw mode.

[0087] The output waveguide 202 may also be provided in the distribution structure 20 as an optical absorber, so that excess optical power can be absorbed by the optical absorber.

[0088] FIG. 8 shows a schematic cross-sectional view of the conversion structure 30 described herein according to a first exemplary embodiment. The conversion structure 30 includes an output coupling element 301, a diffusion element 302, and a conversion element 303. The output coupling element 301 is, for example, an optical grating coupler. The grating coupler for the photonic integrated circuit can advantageously increase the extraction efficiency of electromagnetic radiation from the waveguide into the range. The output coupling element 301 has a structure having a number of protrusions 3010 and recesses 3011 on the side facing the diffusion element 302.

[0089] The diffusing element 302 is disposed between the output coupling element 301 and the conversion element 303. The diffusing element homogenizes the electromagnetic radiation coming out of the output coupling element 301. The diffusing element 302 has multiple scattering centers. If parallel light rays hit different points of the diffusing element 302, they will be distributed in different directions, thus producing diffuse light.

[0090] The conversion element 303 comprises a conversion material. In particular, said conversion material has the form of a ceramic platelet. The conversion element 303 converts electromagnetic radiation of a first dominant wavelength λ1 into electromagnetic radiation of a second dominant wavelength λ2. In particular, the second dominant wavelength λ2 is greater than the first dominant wavelength λ1. For example, the first electromagnetic radiation is partially or completely converted. In case of partial conversion, the conversion element 303 emits a mixed radiation of converted and unconverted electromagnetic radiation. The conversion element 303 is mechanically self-supporting.

[0091] 9 shows a schematic cross-sectional view of the transduction structure 30 described herein according to a second exemplary embodiment. The second exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 8. In contrast to the first exemplary embodiment, the transduction structure 30 does not comprise a diffusing element 302. The transduction element 303 is arranged directly on the output coupling element 301. The transduction element 303 is mechanically free-standing and supported on a protruding portion 3010 of the output coupling element 301.

[0092] FIG. 10 shows a schematic cross-sectional view of the conversion structure 30 described herein according to a third exemplary embodiment. The third exemplary embodiment essentially corresponds to the second exemplary embodiment shown in FIG. 9. In contrast to the second exemplary embodiment, the conversion element 303 is applied to the output coupling element 301 by spray application. For example, the conversion element 303 is formed of a matrix material in which luminescent material particles are embedded. Radiation-transparent polymers, for example polysiloxanes, are particularly suitable as matrix materials. The conversion element 303 extends into a recess 3011 of the output coupling element 301. The conversion element 303 protrudes laterally beyond the output coupling element 301. Advantageously, this results in a particularly good adhesion between the output coupling element 301 and the conversion element 303.

[0093] 11 shows a schematic cross-sectional view of a conversion structure 30 as described herein according to a fourth exemplary embodiment. The fourth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in FIG. 10. In contrast to the third exemplary embodiment, the conversion element 303 is structured. For example, the conversion element 303 is configured by photolithography. The lateral extent of the conversion element 303 corresponds to the lateral extent of the protrusion 3010 of the structure of the output coupling element 301.

[0094] 12 shows a schematic cross-sectional view of an optoelectronic module 1 as described herein according to a sixth exemplary embodiment. The sixth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. In contrast to the first exemplary embodiment, the semiconductor component 10 comprises a plurality of semiconductor emitters 11, 12, 13. The first semiconductor emitter 11 emits electromagnetic radiation at a first dominant wavelength λ1 that is variable in a first spectral range, the second semiconductor emitter 12 emits electromagnetic radiation at a second dominant wavelength λ2 that is variable in a second spectral range, and the third semiconductor emitter 13 emits electromagnetic radiation at a third dominant wavelength λ3 that is variable in a third spectral range.

[0095] The first dominant wavelength λ1, the second dominant wavelength λ2, and the third dominant wavelength λ3 are different from each other. Preferably, the spectral ranges of the first electromagnetic radiation, the second electromagnetic radiation, and the third electromagnetic radiation do not overlap. By using multiple semiconductor emitters 11, 12, 13, the semiconductor component 10 can emit electromagnetic radiation in a wider bandwidth.

[0096] Alternatively, the first, second and third dominant wavelengths λ1, λ2, λ3 are identical. If each semiconductor emitter 11, 12, 13 is assigned a separate input waveguide 201, the distinction between the first, second and third dominant wavelengths λ1, λ2, λ3 may not be necessary. This allows the variation in the emission wavelengths of the individual output waveguides 202 to be particularly small.

[0097] An input waveguide 201 is assigned to each semiconductor emitter 11, 12, 13. Advantageously, the required number of distribution elements 210 in the distribution structure 20 can thereby be reduced. For example, a first number of output waveguides 202 are assigned to the first semiconductor emitter 11, a second number of output waveguides 202 are assigned to the second semiconductor emitter 12 and a third number of output waveguides 202 are assigned to the third semiconductor emitter 13.

[0098] FIG. 13A shows a schematic top view of an optoelectronic module 1 as described herein according to a seventh exemplary embodiment. The seventh exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. 1. The distribution element 210 is designed as a microring resonator. The optoelectronic semiconductor component 10 emits a light having dominant wavelengths λ1 to λ2. n Each distribution element 210 emits electromagnetic radiation having a different dominant wavelength λ1 to λ n To each of the output waveguides 202, a distribution element 210 is assigned.

[0099] The distribution structure 20, the conversion structure 30 and the input coupling element 2011 are arranged on a common carrier 60. The carrier 60 is, for example, made of one of the following materials: III / V compound semiconductor materials, silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, gallium nitride.

[0100] 13B is a schematic cross-sectional view of the optoelectronic module 1 described herein according to the seventh exemplary embodiment. FIG. 13B is a cross-sectional view along the arrow AA of FIG. 13A. In this cross-sectional view, the structure of the conversion structure 30 is visible. The diffusion element 302 is disposed between the conversion element 303 and the output coupling element 301. The input waveguide 201 is disposed on the carrier 60.

[0101] FIG. 14 shows a schematic top view of the optoelectronic module 1 described herein according to an eighth exemplary embodiment. The eighth exemplary embodiment essentially corresponds to the third exemplary embodiment shown in FIG. 3. In contrast to the third exemplary embodiment, the distribution structure 20 is a passive wavelength-selective filter element. In particular, the distribution element 210 is designed as a passive Mach-Zehnder interferometer. Interferometers are wavelength sensitive and therefore suitable for wavelength division multiplexing. A Mach-Zehnder interferometer can be used as a two-wavelength separator. To route each component of wavelengths λ1 and λ2 to different outputs, the path length difference Δd is selected such that for λ1, the phase difference Φ=2πd / λ is an even multiple of π, and for λ2, the phase difference Φ=2πd / λ is an odd multiple of π. This means that Δd=q1*λ1 / 2 or Δd=q2*λ2 / 2, where q1 is even and q2 is odd. To separate more than two wavelengths, multiple Mach-Zehnder interferometers can be used in series.

[0102] 15 shows a schematic top view of an optoelectronic module 1 as described herein according to a ninth exemplary embodiment. The ninth exemplary embodiment essentially corresponds to the first exemplary embodiment shown in FIG. The distribution element 210 is designed as an interference thin film filter. The distribution element 210 and the plurality of reflectors 203 are arranged on a carrier 60. The reflectors 203 are made of a broadband reflecting material, in particular silver. The carrier 60 is designed as a gradient index rod.

[0103] Main wavelength λ1~λ n are separated by an arrangement of different filters. The transmitted electromagnetic radiation is directed at each filter, which passes a single dominant wavelength and blocks the others. The incident electromagnetic radiation is guided through a series of narrow-band interference filters, each of which transmits one wavelength in its passband and reflects all other wavelengths to the next filter.

[0104] 16 shows a schematic cross-sectional view of a device having multiple optoelectronic modules 1 as described herein according to a tenth exemplary embodiment. Two optoelectronic modules 1 are arranged such that the conversion structures 30 of the two optoelectronic modules 1 are adjacent to each other.

[0105] The optoelectronic module 1 is essentially identical to the exemplary embodiment of an optoelectronic module shown in Fig. 1. By using several optoelectronic modules 1, the number of controllable conversion structures 30 can be particularly easily scaled. Preferably, the optoelectronic modules used are of identical design.

[0106] Fig. 17 shows a control concept of an optoelectronic module 1 as described herein according to a third exemplary embodiment. An optoelectronic module 1 is controlled which comprises a semiconductor component 10 and a distribution structure 20. The semiconductor component 10 emits electromagnetic radiation with different discrete dominant wavelengths, preferably in the visible spectral range. The distribution structure 20 comprises a number of distribution elements 210 provided as passive wavelength-selective filter elements. The distribution elements 210 each have an output. The outputs of the distribution elements 210 are uniquely labeled B1, B2, B3 and B4.

[0107] The control concept shows the paths of the dominant wavelengths λ1-λ4 emitted by the semiconductor component 10 over a display period TD and the optical output power of the semiconductor component 10. The display period TD shows the time during which electromagnetic radiation of a desired intensity distribution is provided in the output waveguide 202. Advantageously, the display period TD is so short that no flickering impression is generated for a human observer. For example, the display period TD is at most 1 / 30 s, preferably at most 1 / 60 s, particularly preferably at most 1 / 100 s.

[0108] The optical output power of the semiconductor component 10 is constant during the display period TD.

[0109] Different dominant wavelengths λ1 to λ4 are emitted for times according to the dominant wavelengths during the display period TD. Only the distribution element 210 having the output portion B2 transmits electromagnetic radiation at the second dominant wavelength λ2. As a result, electromagnetic radiation is emitted from above in the second output waveguide 202 and output by the downstream conversion structure 30. In this way, by selectively changing the dominant wavelength output by the semiconductor component 10, each output waveguide 202 can be irradiated with a desired intensity distribution.

[0110] Fig. 18 shows a control concept of an optoelectronic module 1 as described herein according to a fourth exemplary embodiment. The structure of the optoelectronic module 1 essentially corresponds to the optoelectronic module 1 shown in Fig. 17. In contrast to the control concept shown in Fig. 17, the optical output power of the semiconductor component 10 is modulated in the display period TD.

[0111] In the display period TD, different dominant wavelengths are emitted during the same period. Thus, the rate of change of the dominant wavelength can be set to be constant. The optical output power of the semiconductor component 10 is modulated synchronously with the modulation of the dominant wavelength in the display period TD. For example, the semiconductor component 1 does not emit electromagnetic radiation at the first dominant wavelength, so that the output waveguide 202 with the output section B1 is not illuminated. Thus, by modulating the output power of the semiconductor component 10, a desired intensity distribution in the output waveguide 202 can be realized.

[0112] The scope of the carrier is not limited by the description based on the exemplary embodiments, but rather the invention includes any novel feature, particularly any combination of the features in the claims, even if that feature or combination is not explicitly recited in the claims.

[0113] This application claims priority from German patent application 102022106271.6, the disclosure of which is incorporated herein by reference. [Explanation of symbols]

[0114] 1 Optoelectronics Module 10. Semiconductor parts 11 First semiconductor emitter 12 Second semiconductor emitter 13 Third Semiconductor Emitter 20 Distribution structure 201 Input waveguide 2011 Input coupling element 202 Output waveguide 203 Reflector 210 Distribution element 211 Control Line 212 Control device 30 Transformation Structure 301 Output coupling element 3010 Convex part 3011 Recess 302 Diffusion element 303 Conversion element 40 Optical Elements 50 Optical waveguide 60 Career 70 Heat sink TD display period λ1 First dominant wavelength λ2 Second dominant wavelength λ3 Third dominant wavelength λ n nth dominant wavelength

Claims

1. a semiconductor component (10) configured to emit electromagnetic radiation; a distribution structure (20) comprising a plurality of distribution elements (210), at least one input waveguide (201), and a plurality of output waveguides (202); a plurality of conversion structures (30); the distribution element (210), the at least one input waveguide (201), and the output waveguide (202) are monolithically integrated on a substrate; The electromagnetic radiation emitted by the semiconductor component (10) enters the distribution structure (20) via the input waveguide (201); The electromagnetic radiation is output from the distribution structure (20) via the output waveguide (202); A conversion structure (30) is disposed downstream of each output waveguide (202); Optoelectronic module (1).

2. the distribution element (210) is a passive wavelength selective filter element; An optoelectronic module (1) according to claim 1.

3. The distribution element (210) has a passband with a bandwidth of at most 2 nm, preferably at most 1 nm. An optoelectronic module (1) according to claim 2.

4. The semiconductor component (10) is configured to emit coherent radiation having a modulatable dominant wavelength. Optoelectronic module (1) according to claim 2 or 3.

5. The dominant wavelength of the electromagnetic radiation emitted by the semiconductor component (10) is modulatable over a bandwidth of at least 25 nm, preferably at least 50 nm, particularly preferably at least 100 nm in a spectral range including a wavelength of 447 nm; An optoelectronic module (1) according to claim 4.

6. The dominant wavelength can be modulated at a frequency of at least 500 Hz, preferably at least 1 kHz, particularly preferably at least 2 kHz; An optoelectronic module (1) according to claim 5.

7. The semiconductor component (10) comprises at least two semiconductor emitters (11, 12), a first semiconductor emitter (11) configured to emit electromagnetic radiation having a variable dominant wavelength in a first spectral range and a second semiconductor emitter (12) configured to emit electromagnetic radiation having a variable dominant wavelength in a second spectral range. An optoelectronic module (1) according to any one of claims 2 to 6.

8. Each semiconductor emitter (11, 12) is assigned an input waveguide (201); An optoelectronic module (1) according to claim 7.

9. Each output waveguide (202) is assigned exactly one distribution element (210); An optoelectronic module (1) according to any one of claims 2 to 8.

10. The distribution element (210) is an active and controllable coupling element. An optoelectronic module (1) according to claim 1.

11. The distribution element (210) is capable of being modulated at a frequency of at least 0.5 GHz, preferably at 1 GHz, particularly preferably at 10 GHz; Optoelectronic module (1) according to claim 10.

12. the semiconductor component (10) being configured to emit coherent radiation having a dominant wavelength in the blue spectral range, Optoelectronic module (1) according to claim 10 or 11.

13. Each transforming structure (30) comprises an output coupling element (301); Optoelectronic module (1) according to any one of the preceding claims.

14. Each conversion structure (30) comprises a diffusing element (302); Optoelectronic module (1) according to any one of the preceding claims.

15. An input coupling element (2011) is associated with each input waveguide (201); Optoelectronic module (1) according to any one of the preceding claims.

16. The semiconductor component (10) is formed of a III / V compound semiconductor material. Optoelectronic module (1) according to any one of the preceding claims.

17. said distribution structure (20) being formed from one of the following materials (in particular the same III / V compound semiconductor material as said semiconductor component), silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminium oxide, aluminium nitride and gallium nitride, Optoelectronic module (1) according to any one of the preceding claims.

18. The optoelectronic module (1) comprises at least 10, preferably at least 30, more preferably at least 100 output waveguides (202), Optoelectronic module (1) according to any one of the preceding claims.

19. The distribution element (210) is provided as a passive wavelength-selective filter element; 2. A method for operating an optoelectronic module (1) according to claim 1, wherein the semiconductor components (10) emit electromagnetic radiation of different discrete dominant wavelengths, comprising: Each of the different dominant wavelengths is emitted for a time period corresponding to the dominant wavelength during a display period (TD), and the optical output power of the semiconductor component (10) is constant during the display period (TD), or The different dominant wavelengths are emitted for the same period during the display period (TD), and The optical output power of the semiconductor component (10) is modulated in synchronization with the modulation of the dominant wavelength during the display period (TD). How it works.

20. The distribution element (210) is provided as an active and controllable coupling element, 2. A method for operating an optoelectronic module (1) according to claim 1, wherein the semiconductor component (10) emits electromagnetic radiation at a dominant wavelength, the method comprising: The optical output power of the semiconductor component (10) is constant during the display period (TD), and The distribution element (210) acts as a variably modulatable beam splitter, the distribution of the distribution element being constant over the display period (TD), or The distribution element (210) acts as an optical switch and is switched multiple times during a display period (TD); and The optical output power of the semiconductor component (10) is modulated synchronously with the distribution element (210) during the display period (TD). How it works.

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