Silicon-coated iron for oxidation prevention, silicon-coated nickel for oxidation prevention, and their manufacturing method

Abstract

The present invention relates to a silicon-coated anti-oxidation iron, a silicon-coated anti-oxidation nickel, and a method for manufacturing the same, and more particularly to an anti-oxidation iron including a surface coated with silicon (Si) that has resistance to oxidation while maintaining electrical properties by forming a protective film of a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer by depositing silicon (Si), and an anti-oxidation nickel including a surface coated with silicon (Si) that has resistance to oxidation while maintaining electrical properties by forming a protective film of a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer by depositing silicon (Si), and a method for manufacturing the same. The anti-oxidation silicon-coated iron of the present invention comprises an iron layer (10) and iron oxide (Fe 3 O 4 The present invention is characterized in that the ... The method for producing silicon-coated nickel of the present invention is characterized in that silicon (Si) is deposited in a single step of sputtering.

Description

[Technical field]

[0001] The present invention relates to an oxidation-resistant iron coated with silicon, an oxidation-resistant nickel coated with silicon, and a manufacturing method thereof, and more particularly to an oxidation-resistant iron including a surface coated with silicon (Si) that has resistance to oxidation while maintaining electrical properties by forming a protective film of a silicon (Si)-oxygen (O)-iron (Fe) mixed layer by depositing silicon (Si), and an oxidation-resistant nickel including a surface coated with silicon (Si) that has resistance to oxidation while maintaining electrical properties by depositing silicon (Si) to form a protective film of a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer, and a manufacturing method thereof. [Background technology]

[0002] In general, metal materials are oxidized through interaction with the surrounding environment, causing corrosion and reducing the durability of the metal itself. Conventional methods for preventing corrosion of metals include a method of adding other elements to the metal itself to produce a chemically stable alloy, and a method of treating the surface of the metal through coating, etc.

[0003] The surface coating method has an advantage that a coating material can be selected and used depending on the metal properties, application, and surrounding environment, and that corrosion resistance can be improved, but has a disadvantage that use at high temperatures is limited.

[0004] Therefore, in order to solve the above problems, a metal surface coating method that can simplify the process and solve the oxidation problem is required. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for forming a Si-O-Fe protective layer by Si deposition to prevent oxidation and to manufacture an anti-oxidation iron thin film that is stable against oxidation even at high temperatures.

[0006] The present invention has been devised to solve the above problems, and an object of the present invention is to provide a method for forming a Si-O-Ni protective layer by Si deposition to prevent oxidation and to manufacture an oxidation-resistant nickel thin film that is stable against oxidation even at high temperatures.

[0007] The technical problems that the invention aims to solve are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by a person having ordinary skill in the art to which the invention pertains from the following description. [Means for solving the problem]

[0008] The present invention relates to a silicon-coated iron for oxidation prevention, in which silicon (Si) is evaporated to form a silicon (Si)-oxygen (O)-iron (Fe) mixed layer.

[0009] In addition, the silicon-coated iron has the same electrical resistance as iron on which silicon (Si) is not deposited.

[0010] The silicon-coated iron is in the form of a thin film, foil or lump.

[0011] In addition, when the silicon-coated iron is in the form of a polycrystalline thin film, foil, or lump, it is characterized in that it is prevented from being oxidized even when heated at 200 to 350° C. for 20 to 40 minutes.

[0012] The silicon-coated iron has a surface resistance of 9.2×10 -4 ~9.6×10 -4 It is characterized by being Ω / □.

[0013] The silicon-coated iron is characterized by being composed of an iron layer 10, an iron oxide (Fe3O4) layer 20 formed on the iron layer 10, a SiFeX layer 30 formed on the iron oxide layer 20 by mixing silicon (Si)-oxygen (O)-iron (Fe), and a silicon (Si)-oxygen (O) mixed layer 40 formed on the SiFeX layer 30.

[0014] The iron oxide (Fe3O4) layer 20 is characterized in that it has a thickness of 3 to 7 nm.

[0015] The SiFeX layer 30, which is a mixture of silicon (Si), oxygen (O), and iron (Fe), is characterized by having a thickness of 0.8 to 1.2 nm.

[0016] The silicon (Si)-oxygen (O) mixed layer 40 is characterized in that it has a thickness of 5 to 30 nm.

[0017] The present invention relates to a method for producing silicon-coated iron for oxidation prevention, in which silicon (Si) is deposited on iron (Fe) in a single sputtering step.

[0018] The sputtering is performed in an argon atmosphere.

[0019] The sputtering is performed at room temperature to 350° C. for 1 to 5 minutes.

[0020] The present invention relates to a silicon-coated anti-oxidation nickel, in which silicon (Si) is evaporated to form a SiNiX layer 200, which is a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer.

[0021] In addition, the silicon-coated nickel has the same electrical resistance as nickel without the silicon (Si) deposited thereon.

[0022] The silicon-coated nickel is preferably in the form of a single crystal thin film, a polycrystalline thin film, a foil, or a lump.

[0023] In addition, when the silicon-coated nickel is a single crystal thin film, it is characterized in that it is prevented from being oxidized even when heated at 300 to 500° C. for 20 to 50 minutes.

[0024] In addition, when the silicon-coated nickel is in the form of a polycrystalline thin film, foil, or lump, it is characterized in that it is prevented from being oxidized even when heated at 300 to 400°C.

[0025] The silicon-coated nickel has a surface resistance of 6.2×10 -4 ~6.8×10 -4 It is characterized by being Ω / □.

[0026] The silicon-coated nickel is characterized by being composed of a nickel layer 100, a SiNiX layer 200 formed on the nickel layer 100 by mixing silicon (Si)-oxygen (O)-nickel (Ni), a first silicon (Si)-oxygen (O) mixed layer 300 formed on the SiNiX layer 200, and a second silicon (Si)-oxygen (O) mixed layer 400 formed on the first silicon (Si)-oxygen (O) mixed layer 300.

[0027] The SiNiX layer 200 is characterized in that it has a thickness of 0.8 to 1.2 nm.

[0028] The silicon (Si)-oxygen (O) mixed layer including the first silicon (Si)-oxygen (O) mixed layer 300 and the second silicon (Si)-oxygen (O) mixed layer 400 is characterized in that it has a thickness of 5 to 30 nm.

[0029] The present invention relates to a method for producing silicon-coated nickel for oxidation prevention, in which silicon (Si) is deposited on nickel (Ni) in a single step by sputtering.

[0030] The sputtering is performed in an argon atmosphere.

[0031] The sputtering is performed at room temperature to 350° C. for 1 to 5 minutes. Effect of the Invention

[0032] By solving the above problems, the present invention can provide iron for oxidation prevention, which is easily oxidized by simply evaporating silicon (Si), and therefore the process is simple and the production efficiency is high, and since iron (Fe) and silicon (Si) are used, it is possible to provide economically valuable iron for oxidation prevention.

[0033] In addition, the present invention provides iron (Fe) having resistance to oxidation while maintaining electrical properties by forming a silicon (Si)-oxygen (O)-iron (Fe) protective film by deposition of silicon (Si), and a method for manufacturing the same.

[0034] Furthermore, the present invention can provide an antioxidant iron product which can be produced by a very simple and inexpensive method and which can be used semi-permanently at room temperature.

[0035] Furthermore, the present invention can provide anti-oxidant iron having significantly increased oxidation resistance at high temperatures.

[0036] Furthermore, the present invention produces nickel, which is susceptible to oxidation, by simply depositing silicon (Si), and therefore the process is simple and the production efficiency is high. In addition, the use of nickel (Ni) and silicon (Si) makes it possible to provide economically valuable oxidation-resistant nickel.

[0037] In addition, the present invention provides nickel (Ni) having resistance to oxidation while maintaining electrical properties by forming a silicon (Si)-oxygen (O)-nickel (Ni) protective film by deposition of silicon (Si), and a manufacturing method thereof.

[0038] Furthermore, the present invention can provide nickel that can be produced by a very simple and inexpensive method and that can be used semi-permanently at room temperature.

[0039] The present invention also provides an oxidation-resistant nickel having significantly increased oxidation resistance at high temperatures.

[0040] The effects of the present invention are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims. [Brief description of the drawings]

[0041] [Figure 1] 1 is a photograph of a pure iron plate and a silicon (Si) coated iron plate according to the present invention before and after heat treatment. [Diagram 2] 1 is a graph showing the results of XRD measurements of a pure iron plate and a silicon-coated iron plate before and after heat treatment according to the present invention. [Diagram 3] 4 is a photograph showing the results of SEM measurement of a pure iron plate and a silicon-coated iron plate before and after heat treatment according to the present invention. [Figure 4] 1A is a photograph and a graph showing the results of cross-sectional measurement by TEM of a silicon-coated iron plate according to the present invention, and (b) and (c) are photographs and a graph showing the results of component analysis by TEM of the sample surface. [Diagram 5] 1 is a graph showing the results of measuring the sheet resistance of a pure iron plate and a silicon-coated iron plate before and after heat treatment according to the present invention. [Figure 6] 1 is a photograph showing the predicted distribution of O (red) and Si (blue) on a thin Fe (gold) film of a silicon-coated iron plate according to the present invention, (a) a side view and (b) a plan view. [Figure 7] 1 is a graph showing predicted ΔE and atomic distribution based on penetration depth for a pure iron plate and a silicon coated iron plate according to the present invention. [Figure 8] 1 is a photograph of a pure nickel plate and a silicon (Si)-coated nickel plate according to the present invention before and after heat treatment. [Figure 9] 1 is a graph showing the results of XRD measurements of a pure nickel plate and a silicon-coated nickel plate according to the present invention before and after heat treatment. [Figure 10] 3 is a photograph showing the results of SEM measurement of a pure nickel plate and a silicon-coated nickel plate according to the present invention before and after heat treatment. [Figure 11] 1A is a photograph and a graph showing the results of cross-sectional measurement by TEM of a silicon-coated nickel plate according to the present invention, and (b) and (c) are photographs and a graph showing the results of component analysis by TEM of the sample surface. [Figure 12] 1 is a graph showing the results of measuring the sheet resistance of a pure nickel plate and a silicon-coated nickel plate according to the present invention before and after heat treatment. [Figure 13] 1 is a photograph showing the predicted distribution of O (red) and Si (gray) on a Ni (green) thin film of a silicon-coated nickel plate according to the present invention, (a) a side view and (b) a plan view. [Figure 14] 1 is a graph showing predicted ΔE and atomic distribution based on penetration depth for pure nickel plates and silicon coated nickel plates according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0042] The terms used in this specification are currently widely used and general terms that are selected as much as possible in consideration of the functions of the present invention, but these may change depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc. In addition, in certain cases, the applicant may arbitrarily select terms, and in such cases, the meanings of the terms will be described in detail in the description of the invention. Therefore, the terms used in this specification must be defined based on the meanings of the terms and the overall content of the present invention, rather than simply the names of the terms.

[0043] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which the present invention belongs. Terms as defined in commonly used dictionaries should be interpreted to have a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined in this application.

[0044] Numeric ranges are inclusive of the numerical values ​​as defined in the range. Every maximum numerical limitation given throughout this specification should be understood to include every lower numerical limitation, as if such lower numerical limitations were expressly written herein. Every minimum numerical limitation given throughout this specification includes every higher numerical limitation, as if such higher numerical limitations were expressly written herein. Every numerical range given throughout this specification includes every narrower numerical range that falls within such broader numerical range, as if such narrower numerical ranges were all expressly written herein.

[0045] Silicone-coated iron for oxidation protection

[0046] The present invention relates to an oxidation-resistant iron coated with silicon, and more particularly to an oxidation-resistant iron having a silicon (Si)-oxygen (O)-iron (Fe) mixed layer formed by evaporating silicon.

[0047] The oxidation-resistant iron having the mixed layer formed thereon may be resistant to oxidation while maintaining its electrical properties.

[0048] The mixed layer is formed to prevent further oxidation of the iron oxide layer, and the silicon may exhibit oxidation resistance at high temperatures. The silicon may serve to bind with the oxygen on the surface of the iron and fix it on the surface of the iron, and in this case, the most basic structure may be configured as shown in Fig. 6. As shown in the side view of Fig. 6(a) and the plan view of Fig. 6(b), when the oxygen covers the surface of the iron and is fixed by the silicon, other oxygen cannot enter the inside of the iron, and oxidation resistance may be exhibited.

[0049] In the present invention, the silicon-coated iron may have an electrical resistance between that of iron on which silicon (Si) is not deposited and that of gold (Au).

[0050] In the present invention, the silicon-coated iron may be a polycrystalline thin film, foil or lump.

[0051] In the present invention, when the silicon-coated iron is a polycrystalline thin film, foil, or lump, it may be one that is prevented from oxidizing even when heated at 200 to 400° C. for 20 to 40 minutes. When the silicon-coated iron is a polycrystalline thin film, foil, or lump, it may be one that is prevented from oxidizing and does not show any visible change in color or in the results of XRD measurement or SEM measurement even when the heat treatment is carried out as described above.

[0052] The present invention relates to an oxidation-resistant iron coated with silicon, in which a SiFeX layer, which is a silicon (Si)-oxygen (O)-iron (Fe) mixed layer, is formed by evaporating silicon.

[0053] The SiFeX-coated iron for oxidation prevention may be resistant to oxidation while maintaining its electrical and magnetic properties.

[0054] The SiFeX layer is formed to prevent further oxidation of the iron oxide layer, and the SiFeX layer may exhibit oxidation resistance at high temperatures. The silicon may bond with the oxygen on the surface of the iron and fix it on the surface of the iron, and the most basic structure may be configured as shown in Fig. 6. As shown in the side view of Fig. 6(a) and the plan view of Fig. 6(b), when the oxygen covers the surface of the iron and is fixed by the silicon, other oxygen cannot enter the inside of the iron, and the SiFeX layer may exhibit oxidation resistance.

[0055] In the present invention, the silicon-coated iron may have the same electrical resistance as iron on which silicon (Si) is not deposited.

[0056] In the present invention, the silicon-coated iron may be in the form of a thin film, a foil or a lump.

[0057] In the present invention, when the silicon-coated iron is in the form of a thin film, foil, or lump, it may be one that is prevented from oxidizing even when heated for 20 to 40 minutes at 200 to 350° C. When the iron is in the form of a thin film, foil, or lump, it may be one that is prevented from oxidizing and does not show any visible change in color or in the results of XRD measurement or SEM measurement even when the heat treatment is carried out as described above.

[0058] In the present invention, the silicon-coated iron has a surface resistance of 9.2×10 -4 ~9.6×10 -4 The silicon-coated iron may have a sheet resistance similar to that of iron not coated with silicon, and the sheet resistance may not increase sharply even after heat treatment.

[0059] In the present invention, the silicon-coated iron may be composed of an iron layer 10, an iron oxide (Fe3O4) layer 20 formed on the iron layer 10, a SiFeX layer 30 formed on the iron oxide layer 20 by mixing silicon (Si)-oxygen (O)-iron (Fe), and a silicon (Si)-oxygen (O) mixed layer 40 formed on the SiFeX layer 30.

[0060] In the present invention, the thickness of the iron oxide (Fe3O4) layer 20 may be 3 to 7 nm, and preferably 3 to 5 nm. The iron oxide layer may be formed very thinly so as to have almost no effect on the corrosion resistance of iron.

[0061] In the present invention, the SiFeX layer 30 formed by mixing silicon (Si), oxygen (O), and iron (Fe) may have a thickness of 0.8 to 1.2 nm.

[0062] In the present invention, the silicon (Si)-oxygen (O) mixed layer 40 may have a thickness of 5 to 30 nm, and preferably 8 to 20 nm.

[0063] Manufacturing method of silicon-coated iron for oxidation prevention

[0064] The present invention relates to a method for producing silicon-coated iron for oxidation prevention.

[0065] The silicon-coated iron for oxidation prevention according to the present invention relates to an iron for oxidation prevention in which a SiFeX layer, which is a silicon (Si)-oxygen (O)-iron (Fe) mixed layer, is formed by evaporating silicon.

[0066] The oxidation-resistant iron having the SiFeX layer formed thereon may be resistant to oxidation while maintaining its electrical properties.

[0067] The SiFeX layer is formed to prevent further oxidation of the iron oxide layer, and the SiFeX layer may exhibit oxidation resistance at high temperatures. The silicon may bond with the oxygen on the surface of the iron and fix it on the surface of the iron, and the most basic structure may be configured as shown in Fig. 6. As shown in the side view of Fig. 6(a) and the plan view of Fig. 6(b), when the oxygen covers the surface of the iron and is fixed by the silicon, other oxygen cannot enter the inside of the iron, and the SiFeX layer may exhibit oxidation resistance.

[0068] In the present invention, the silicon-coated iron may have the same electrical resistance as iron on which silicon (Si) is not deposited.

[0069] In the present invention, the silicon-coated iron may be in the form of a thin film, a foil or a lump.

[0070] In the present invention, when the silicon-coated iron is in the form of a thin film, foil, or lump, it may be one that is prevented from oxidizing even when heated for 20 to 40 minutes at 200 to 350° C. When the iron is in the form of a thin film, foil, or lump, it may be one that is prevented from oxidizing and does not show any visible change in color or in the results of XRD measurement or SEM measurement even when the heat treatment is carried out as described above.

[0071] In the present invention, the silicon-coated iron has a surface resistance of 9.2×10 -4 ~9.6×10 -4 The silicon-coated iron may have a sheet resistance similar to that of iron not coated with silicon, and the sheet resistance may not increase sharply even after heat treatment.

[0072] In the present invention, the silicon-coated iron may be composed of an iron layer 10, an iron oxide (Fe3O4) layer 20 formed on the iron layer 10, a SiFeX layer 30 formed on the iron oxide layer 20 by mixing silicon (Si)-oxygen (O)-iron (Fe), and a silicon (Si)-oxygen (O) mixed layer 40 formed on the SiFeX layer 30.

[0073] In the present invention, the thickness of the iron oxide (Fe3O4) layer 20 may be 3 to 7 nm, and preferably 3 to 5 nm. The iron oxide layer may be formed very thinly so as to have almost no effect on the corrosion resistance of iron.

[0074] In the present invention, the SiFeX layer 30 formed by mixing silicon (Si), oxygen (O), and iron (Fe) may have a thickness of 0.8 to 1.2 nm.

[0075] In the present invention, the silicon (Si)-oxygen (O) mixed layer 40 may have a thickness of 5 to 30 nm, and preferably 8 to 20 nm.

[0076] The present invention relates to a method for manufacturing silicon-coated iron for oxidation prevention, which comprises depositing silicon (Si) on iron (Fe) in a single process of sputtering. Since the manufacturing process is carried out in a single process as described above, the manufacturing method is very simple and economical.

[0077] In the present invention, the sputtering may be carried out under an argon atmosphere.

[0078] In the present invention, the sputtering may be performed at room temperature to 350° C. for 1 to 5 minutes, and preferably at 180 to 200° C. for 70 to 350 seconds. If the sputtering temperature and duration are higher or lower than the range, crystal grain boundaries and potentials are formed, resulting in a decrease in crystallinity, and therefore it is preferable to perform the sputtering within the above temperature and duration range.

[0079] Silicone coated nickel for oxidation protection

[0080] The present invention relates to an oxidation-resistant nickel coated with silicon, and more particularly to an oxidation-resistant nickel in which a SiNiX layer 200, which is a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer, is formed by evaporating silicon.

[0081] The oxidation-resistant nickel on which the SiNiX layer 200 is formed may be resistant to oxidation while maintaining its electrical properties.

[0082] The SiNiX layer 200 is formed to prevent oxidation and to exhibit oxidation resistance at high temperatures. The silicon may serve to bind with the oxygen on the surface of the nickel and fix it on the surface of the nickel, and in this case, the most basic structure may be configured as shown in Fig. 6. As shown in the side view of Fig. 6(a) and the plan view of Fig. 6(b), when the oxygen covers the surface of the nickel and is fixed by the silicon, other oxygen cannot enter the inside of the nickel, and oxidation resistance may be exhibited.

[0083] In the present invention, when the silicon-coated nickel is a single crystal thin film, it may be one that is prevented from being oxidized even when heated at 300 to 500° C. for 20 to 50 minutes.

[0084] In the present invention, when the silicon-coated nickel is a polycrystalline thin film, foil, or lump, it may be one that is prevented from oxidizing even when heated for 20 to 40 minutes at 200 to 400° C. When the silicon-coated nickel is a polycrystalline thin film, foil, or lump, it may be one that is prevented from oxidizing and does not show any visible change in color or in the results of XRD measurement or SEM measurement even when the heat treatment is carried out as described above.

[0085] In the present invention, the silicon-coated nickel has a surface resistance of 6.2×10-4 ~6.8×10 -4 The silicon-coated nickel may have a sheet resistance similar to that of nickel not coated with silicon, and the sheet resistance may not increase sharply even after heat treatment.

[0086] In the present invention, the silicon-coated nickel may be composed of a nickel layer 100, a SiNiX layer 200 formed on the nickel 100 and made of a mixture of silicon (Si)-oxygen (O)-nickel (Ni), a first silicon (Si)-oxygen (O) mixed layer 300 formed on the SiNiX layer 200, and a second silicon (Si)-oxygen (O) mixed layer 400 formed on the first silicon (Si)-oxygen (O) mixed layer 300.

[0087] In the present invention, the SiNiX layer 200 may have a thickness of 0.8 to 1.2 nm.

[0088] In the present invention, the silicon (Si)-oxygen (O) mixed layer including the first silicon (Si)-oxygen (O) mixed layer 300 and the second silicon (Si)-oxygen (O) mixed layer 400 may have a thickness of 5 to 30 nm, preferably 8 to 20 nm. The first silicon (Si)-oxygen (O) mixed layer 300 may have a higher oxygen content than a nickel content, and the second silicon (Si)-oxygen (O) mixed layer 400 may have a higher nickel content than an oxygen content.

[0089] How to make silicon-coated nickel for oxidation resistance

[0090] The present invention relates to a method for producing silicon-coated nickel for oxidation protection.

[0091] The silicon-coated anti-oxidation nickel of the present invention relates to an anti-oxidation nickel having a SiNiX layer 200, which is a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer, formed by depositing silicon. The present invention relates to a method for manufacturing the silicon-coated anti-oxidation nickel.

[0092] The silicon-coated anti-oxidation nickel of the present invention relates to an anti-oxidation nickel in which a SiNiX layer 200, which is a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer, is formed by evaporating silicon.

[0093] The oxidation-resistant nickel on which the SiNiX layer is formed may be resistant to oxidation while maintaining its electrical properties.

[0094] The SiNiX layer is formed to prevent oxidation, and the silicon may exhibit oxidation resistance at high temperatures. The silicon may bond with the oxygen on the surface of the nickel to fix it on the surface of the nickel, and the most basic structure may be configured as shown in Fig. 6. As shown in the side view of Fig. 6(a) and the plan view of Fig. 6(b), when the oxygen covers the surface of the nickel and is fixed by the silicon, other oxygen cannot enter the inside of the nickel, and oxidation resistance may be exhibited.

[0095] In the present invention, the silicon-coated nickel may have the same electrical resistance as nickel on which the silicon (Si) is not deposited.

[0096] In the present invention, the silicon-coated nickel may be a single crystal thin film, a polycrystalline thin film, a foil or a lump.

[0097] In the present invention, when the silicon-coated nickel is a single crystal thin film, it may be one that is prevented from being oxidized even when heated at 300 to 500° C. for 20 to 50 minutes.

[0098] In the present invention, when the silicon-coated nickel is a polycrystalline thin film, foil, or lump, it may be one that is prevented from oxidizing even when heated for 20 to 40 minutes at 200 to 400° C. When the silicon-coated nickel is a polycrystalline thin film, foil, or lump, it may be one that is prevented from oxidizing and does not show any visible change in color or in the results of XRD measurement or SEM measurement even when the heat treatment is carried out as described above.

[0099] In the present invention, the silicon-coated nickel has a surface resistance of 6.2×10 -4 ~6.8×10 -4 The silicon-coated nickel may have a sheet resistance similar to that of nickel not coated with silicon, and the sheet resistance may not increase sharply even after heat treatment.

[0100] In the present invention, the silicon-coated nickel may be composed of a nickel layer 100, a SiNiX layer 200 formed by mixing silicon (Si)-oxygen (O)-nickel (Ni) on the nickel 100, a first silicon (Si)-oxygen (O) mixed layer 300 formed on the SiNiX layer 200, and a second silicon (Si)-oxygen (O) mixed layer 400 formed on the first silicon (Si)-oxygen (O) mixed layer 300.

[0101] In the present invention, the SiNiX layer 200 may have a thickness of 0.8 to 1.2 nm.

[0102] In the present invention, the silicon (Si)-oxygen (O) mixed layer including the first silicon (Si)-oxygen (O) mixed layer 300 and the second silicon (Si)-oxygen (O) mixed layer 400 may have a thickness of 5 to 30 nm, preferably 8 to 20 nm. The first silicon (Si)-oxygen (O) mixed layer 300 may have a higher oxygen content than a nickel content, and the second silicon (Si)-oxygen (O) mixed layer 400 may have a higher nickel content than an oxygen content.

[0103] The present invention relates to a method for manufacturing silicon-coated nickel for oxidation prevention, which comprises depositing silicon (Si) on nickel (Ni) in a single process of sputtering. Since the manufacturing process is carried out in a single process as described above, the manufacturing method is very simple and economical.

[0104] In the present invention, the sputtering may be carried out under an argon atmosphere.

[0105] In the present invention, the sputtering may be performed at room temperature to 350° C. for 1 to 5 minutes, and preferably at 180 to 200° C. for 70 to 350 seconds. If the sputtering temperature and duration are higher or lower than the range, crystal grain boundaries and potentials are formed, resulting in a decrease in crystallinity, and therefore it is preferable to perform the sputtering within the above temperature and duration range.

[0106] Working Example

[0107] Hereinafter, examples of the present invention will be described in detail, but it is obvious that the present invention is not limited to the following examples.

[0108] The advantages and features of the present invention, as well as the methods for achieving them, will become clearer with reference to the following detailed examples. However, the present invention is not limited to the following disclosed examples, and may be embodied in various different forms, and these examples are merely provided to fully disclose the present invention and fully inform those skilled in the art of the present invention of the scope of the invention, and the present invention is only defined by the scope of the claims.

[0109] <Example 1> Silicon-coated iron plate

[0110] Silicon (Si) was deposited to a thickness of 20 nm on an iron (Fe) plate by sputtering at 190° C. for 5 minutes in an argon atmosphere to prepare a silicon-coated iron plate.

[0111] <Comparative Example 1> Iron plate without silicone coating

[0112] An iron plate without silicone coating was prepared.

[0113] <Example 2> Silicon-coated nickel plate

[0114] Silicon (Si) was deposited to a thickness of 20 nm on a nickel (Ni) plate by sputtering at 190° C. for 5 minutes in an argon atmosphere to prepare a silicon-coated nickel plate.

[0115] <Comparative Example 2> Nickel plate without silicon coating

[0116] A nickel plate without any silicon coating was prepared.

[0117] <Experimental Example 1> Observation of the degree of oxidation after heat treatment

[0118] The iron plates manufactured in Example 1 and Comparative Example 1 were heat-treated at 300° C. for 30 minutes and observed before and after the heat treatment. The results are shown in FIG.

[0119] As shown in FIG. 1, the iron plate of Comparative Example 1 was oxidized and turned black after heat treatment, whereas the silicon-coated iron plate manufactured in Example 1 maintained its original color even after heat treatment, confirming that no oxidation occurred.

[0120] From the above results, it was confirmed that the silicon-coated iron according to the present invention exhibits resistance to oxidation.

[0121] In addition, the nickel plates manufactured in Example 2 and Comparative Example 2 were heat-treated at 400° C. for 30 minutes and observed before and after the heat treatment. The results are shown in FIG.

[0122] As shown in FIG. 8, the nickel plate of Comparative Example 2 was oxidized and turned black after heat treatment, whereas the silicon-coated nickel plate prepared in Example 2 maintained its original color even after heat treatment, confirming that no oxidation occurred.

[0123] From the above results, it was confirmed that the silicon-coated nickel according to the present invention exhibits resistance to oxidation.

[0124] <Experimental Example 2> XRD Measurement

[0125] The iron plates manufactured in Example 1 and Comparative Example 1 were heat-treated at 300° C. for 30 minutes, and were measured by XRD before and after the heat treatment. The results are shown in FIG.

[0126] As shown in FIG. 2, the silicon-coated iron plate produced in Example 1 showed no peaks other than Fe before and after heat treatment. In addition, the crystal structure did not change. This confirmed that the silicon-coated iron plate did not oxidize after heat treatment. On the other hand, in the case of the iron plate in Comparative Example 1, iron oxide peaks were observed after heat treatment, confirming that oxidation had occurred. It is presumed that iron oxide (Fe3O4) was also produced in Example 1, but this was not shown in the XRD results because the oxidation reaction was almost nonexistent and the iron was produced very thinly.

[0127] From the above results, it was confirmed that the silicon-coated iron according to the present invention exhibits resistance to oxidation.

[0128] In addition, the nickel plates manufactured in Example 2 and Comparative Example 2 were heat-treated at 400° C. for 30 minutes, and were measured by XRD before and after the heat treatment. The results are shown in FIG.

[0129] As shown in Fig. 9, the silicon-coated nickel plate produced in Example 2 had no peaks other than Ni before and after the heat treatment. In addition, the crystal structure did not change. This confirmed that the silicon-coated nickel plate did not oxidize after the heat treatment. On the other hand, in the case of the nickel plate of Comparative Example 2, a nickel oxide peak was observed after the heat treatment, confirming that oxidation occurred.

[0130] From the above results, it was confirmed that the silicon-coated nickel according to the present invention exhibits resistance to oxidation.

[0131] <Experimental Example 3> SEM Observation

[0132] The iron plates manufactured in Example 1 and Comparative Example 1 were heat-treated at 300° C. for 30 minutes, and were observed before and after the heat treatment at 10,000 times magnification by SEM. The results are shown in FIG.

[0133] As shown in Figure 3, the iron plate of Comparative Example 1 showed a change in its surface after heat treatment, whereas the silicon-coated iron plate produced in Example 1 showed no change in its surface after heat treatment. This confirmed that the silicon-coated anti-oxidation iron plate produced in Example 1 did not oxidize.

[0134] From the above results, it was confirmed that the silicon-coated iron according to the present invention exhibits resistance to oxidation.

[0135] In addition, the nickel plates manufactured in Example 2 and Comparative Example 2 were heat-treated at 400° C. for 30 minutes, and were observed before and after the heat treatment at a magnification of 10,000 times using a SEM. The results are shown in FIG.

[0136] 10, the nickel plate of Comparative Example 2 showed a change in the surface after heat treatment, whereas the silicon-coated nickel plate produced in Example 2 showed no change in the surface after heat treatment. This confirmed that the silicon-coated anti-oxidation nickel plate produced in Example 2 did not oxidize.

[0137] From the above results, it was confirmed that the silicon-coated nickel according to the present invention exhibits resistance to oxidation.

[0138] <Experimental Example 4> TEM analysis

[0139] The iron plate manufactured in Example 1 was analyzed by TEM, and the results are shown in FIG.

[0140] As shown in FIG. 4, it was confirmed that the silicon-coated iron plate has a thin film surface formed in the following order: an iron layer, an iron oxide (Fe3O4) layer formed on the iron layer, a SiFeX layer formed of a mixture of silicon (Si)-oxygen (O)-iron (Fe) on the iron oxide layer, and a silicon (Si)-oxygen (O) mixture layer formed on the SiFeX layer.

[0141] When the iron plate was exposed to air, a natural oxide film formed, revealing iron oxide (Fe3O4). The natural oxide film was so thin that it was not visible to the naked eye or in XRD results. By depositing silicon on the natural oxide film, silicon atoms fixed the oxygen, which moves freely on the silicon surface, to the optimal site, revealing the SiFeX layer, which was determined to play a crucial role in preventing oxidation. It was confirmed that Si-O-Fe bonds were formed.

[0142] From the above results, it was confirmed that the silicon-coated iron according to the present invention can exhibit oxidation resistance at high temperatures by forming a Si-O-Fe mixed layer on the iron layer, thereby preventing oxidation.

[0143] In addition, the silicon-coated nickel plate prepared in Example 2 was analyzed by TEM, and the results are shown in FIG.

[0144] As shown in FIG. 11, it was confirmed that the silicon-coated nickel plate has a thin film surface formed in the following order: a nickel layer, a SiNiX layer formed on the nickel layer by mixing silicon (Si)-oxygen (O)-nickel (Ni), a first silicon (Si)-oxygen (O) mixed layer formed on the SiNiX layer, and a second silicon (Si)-oxygen (O) mixed layer formed on the first silicon (Si)-oxygen (O) mixed layer.

[0145] By depositing silicon on the nickel layer, silicon atoms fix the oxygen, which moves freely on the surface of the nickel layer, to the optimal site to generate Si-O-Ni bonds, and it was determined that the SiNiX layer formed thus plays an important role in preventing oxidation.

[0146] From the above results, it was confirmed that the silicon-coated nickel according to the present invention can exhibit oxidation resistance at high temperatures by forming a Si-O-Ni mixed layer on the nickel layer, thereby preventing oxidation.

[0147] <Experimental Example 5> Measurement of surface resistance

[0148] The iron plates manufactured in Example 1 and Comparative Example 1 were heat-treated at 300° C. for 30 minutes, and the sheet resistance was measured before and after the heat treatment. The results are shown in FIG.

[0149] As shown in FIG. 5, in the case of the iron plate of Comparative Example 1, the sheet resistance value increased rapidly after the heat treatment, whereas in the case of the silicon-coated iron plate manufactured in Example 1, no significant change was observed even after the heat treatment.

[0150] From the above results, it was confirmed that the silicon-coated iron according to the present invention exhibits resistance to oxidation while maintaining electrical properties.

[0151] In addition, the nickel plates manufactured in Example 2 and Comparative Example 2 were heat-treated at 400° C. for 30 minutes, and the sheet resistance was measured before and after the heat treatment. The results are shown in FIG.

[0152] As shown in FIG. 12, in the case of the nickel plate of Comparative Example 2, the sheet resistance value increased rapidly after the heat treatment, whereas in the case of the silicon-coated nickel plate produced in Example 2, no significant change was observed even after the heat treatment.

[0153] From the above results, it was confirmed that the silicon-coated nickel according to the present invention exhibits resistance to oxidation while maintaining electrical properties.

[0154] <Experimental Example 6> Measurement of oxygen energy difference based on penetration depth

[0155] Using the energy of the state in which the silicon-coated iron plate produced in Example 1 exists outside the surface, the energy of oxygen penetrating into the iron was calculated based on the depth from the surface, and the difference between this and the energy calculated when oxygen exists on the surface of the sample is shown in FIG. 7.

[0156] As shown in FIG. 7, in the case of the silicon-coated iron plate manufactured in Example 1, oxygen must overcome an energy barrier to pass through the Si-O-Fe mixed layer from the surface, and the energy barrier represents resistance to oxidation.

[0157] From the above results, it was confirmed that the silicon-coated iron according to the present invention exhibits resistance to oxidation.

[0158] In addition, the energy of oxygen penetrating into nickel was calculated based on the depth from the surface, using the energy of the state in which the silicon produced in Example 2 exists outside the surface of the coated nickel plate as a reference, and the difference between this and the energy calculated when oxygen exists on the surface of the sample is shown in FIG. 14.

[0159] As shown in FIG. 14, in the case of the silicon-coated nickel plate manufactured in Example 2, oxygen must overcome an energy barrier to pass through the Si-O-Ni mixed layer from the surface, and the energy barrier represents resistance to oxidation.

[0160] From the above results, it was confirmed that the silicon-coated nickel according to the present invention exhibits resistance to oxidation. [Explanation of symbols]

[0161] 10 Iron Layer 20 Iron oxide (Fe3O4) layer 30 SiFeX layers 40 Silicon (Si)-oxygen (O) mixed layer 100 Nickel (Ni) layer 200 SiNiX layers 300 First silicon (Si)-oxygen (O) mixed layer 400 Second silicon (Si)-oxygen (O) mixed layer

Claims

1. The silicon-coated iron for oxidation prevention is formed by evaporating silicon (Si) to form a SiFeX layer (30) which is a silicon (Si)-oxygen (O)-iron (Fe) mixed layer.

2. The silicon-coated iron is 2. The silicon-coated, oxidation-resistant iron of claim 1, characterized in that the silicon (Si) has an electrical resistivity similar to that of undeposited iron.

3. The silicon-coated iron is The silicon-coated iron for oxidation prevention according to claim 1, characterized in that it is in the form of a thin film, foil or lump.

4. When the silicon-coated iron is a thin film, a foil, or a lump, The silicon-coated iron for oxidation prevention according to claim 3, which is prevented from oxidation even when heated at 200 to 350° C. for 20 to 40 minutes.

5. The silicon-coated iron is Surface resistance is 9.2 x 10 －４ ~9.6 x 10 －４ The silicon-coated iron for oxidation prevention according to claim 1, characterized in that the resistance is Ω / □.

6. The silicon-coated iron is An iron layer (10); The iron oxide (Fe ３ O ４ ) layer (20); a SiFeX layer (30) formed on the iron oxide layer (20) by mixing silicon (Si)-oxygen (O)-iron (Fe); 2. The silicon-coated iron for oxidation prevention according to claim 1, characterized in that it is composed of a silicon (Si)-oxygen (O) mixed layer (40) formed on the SiFeX layer (30).

7. The iron oxide (Fe ３ O ４ ) layer (20) The silicon-coated iron for oxidation prevention according to claim 6, characterized in that the thickness is 3-7 nm.

8. The SiFeX layer (30) is a mixture of silicon (Si), oxygen (O) and iron (Fe), The silicon-coated iron for oxidation prevention according to claim 6, characterized in that the thickness is 0.8-1.2 nm.

9. The silicon (Si)-oxygen (O) mixed layer (40) is The silicon-coated iron for oxidation prevention according to claim 6, characterized in that the thickness is 5-30 nm.

10. A method for manufacturing silicon-coated iron for oxidation prevention, in which silicon (Si) is deposited on iron (Fe) in a single process by sputtering.

11. The sputtering is 10. The method for producing silicon-coated iron for oxidation prevention according to claim 10, characterized in that the method is carried out under an argon atmosphere.

12. The sputtering is 10. The method for producing silicon-coated iron for oxidation prevention according to claim 10, characterized in that the treatment is carried out at room temperature to 350° C. for 1 to 5 minutes.

13. Silicon (Si) is evaporated to form a SiNiX layer (200) which is a silicon (Si)-oxygen (O)-nickel (Ni) mixed layer. Silicon is coated on nickel for oxidation prevention.

14. The silicon-coated nickel is 14. The silicon-coated anti-oxidant nickel of claim 13, characterized in that the silicon (Si) has an electrical resistivity similar to that of undeposited nickel.

15. The silicon-coated nickel is The silicon-coated nickel for oxidation protection according to claim 13, characterized in that it is a single crystal film, a polycrystalline film, a foil or a bulk.

16. When the silicon-coated nickel is a single crystal thin film, The silicon-coated nickel for oxidation prevention according to claim 15, which is prevented from oxidation even when heated at 300 to 500° C. for 20 to 40 minutes.

17. When the silicon-coated nickel is a polycrystalline thin film, foil, or bulk, The silicon-coated nickel for oxidation prevention according to claim 15, which is prevented from oxidation even when heated at 200 to 400° C. for 20 to 40 minutes.

18. The silicon-coated nickel is Surface resistance is 6.2 x 10 －４ ~6.8 x 10 －４ The silicon-coated nickel for oxidation prevention according to claim 13, characterized in that it has a resistance of Ω / □.

19. The silicon-coated nickel is A nickel layer (100); A SiNiX layer (200) formed on the nickel layer (100) by mixing silicon (Si)-oxygen (O)-nickel (Ni); A first silicon (Si)-oxygen (O) mixed layer (300) formed on the SiNiX layer (200); and a second silicon (Si)-oxygen (O) mixed layer (400) formed on the first silicon (Si)-oxygen (O) mixed layer (300). The silicon-coated nickel for oxidation prevention according to claim 13.

20. The SiNiX layer (200) is The silicon-coated nickel for oxidation prevention according to claim 19, characterized in that the thickness is 0.8-1.2 nm.

21. The silicon (Si)-oxygen (O) mixed layer including the first silicon (Si)-oxygen (O) mixed layer (300) and the second silicon (Si)-oxygen (O) mixed layer (400) is The silicon-coated nickel for oxidation prevention according to claim 19, characterized in that the thickness is 5-30 nm.

22. A method for producing silicon-coated nickel for oxidation prevention, in which silicon (Si) is deposited on nickel (Ni) in a single step by sputtering.

23. The sputtering is The method for producing silicon-coated nickel for oxidation prevention according to claim 22, characterized in that it is carried out under an argon atmosphere.

24. The sputtering is The method for producing silicon-coated nickel for oxidation prevention according to claim 23, characterized in that the method is carried out at room temperature to 350° C. for 1 to 5 minutes.

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