Half-bridge module with an insulated junction surface between two transistor strip sections

Abstract

The half-bridge module (M) has a support (T) having a conductor path layer. The conductor path layer has a first transistor strip section (LA), a second transistor strip section (HA), and an intermediate section (ZA), each extending along a first direction (R1). The intermediate section (ZA) is arranged between the first transistor strip section (LA) and the second transistor strip section (HA). In the intermediate section (ZA), a connection surface section (VF) of a first surface (F1) that also extends in the first transistor strip section (LA) extends. A bonding surface (P) insulated therefrom is provided alternately with the connection surface section (VF) in the first direction (R1).

Description

Technical Field

[0001] Vehicles equipped with an electric drive unit have an electric machine, and the windings of this electric machine are energized in a switchable manner. In order to often achieve a required output exceeding 100 kW, a high current often exceeding 100 A and an operating voltage often exceeding 100 V, particularly 800 V, are used. Therefore, a power transistor that generates a switching edge with a high current stroke in a short time is used for the switchable energization of the windings. In particular, in order to make the switching edge of the transistor shorter or to make the current rise rate faster, a transistor that switches extremely fast, such as a SiC transistor, is used. In particular, in order to be able to effectively use this type of transistor that switches extremely fast, a connection with extremely low inductance is required, and here, the signal propagation time should also be considered for a reliable connection circuit. The object of the present invention is to present a means capable of connecting a high-power transistor to a half-bridge in a low-inductance manner.

[0002] The above object is solved by the half-bridge module according to claim 1. Further characteristics, features, embodiments and advantages will become apparent from the dependent claims, the description and the drawings.

[0003] It is proposed to divide the conductor path layer of the support into two strip sections and an intermediate section located between these strip sections. These sections are strip-shaped and extend in the same direction. Thus, these strips are positioned (when viewed perpendicular to the longitudinal direction of the strip) one above the other, and the intermediate section is located between the first-mentioned strip sections. The two strip sections on both sides of the intermediate section are provided at that location for transistors that can be attached, for example, as bare dies (semiconductor components not housed). By having insulated junction surfaces located within the intermediate section, the overall inductance is slightly reduced. Based on their proximity, these junction surfaces enable a direct and short connection into the first upper strip section, where, on the other hand, output contact fields may be provided. These output contact fields are located immediately adjacent to the lower (second) strip section, such that the contact points on the insulated junction surface can be located immediately adjacent to the contact points of the second strip section. This results in contact means between the insulated junction surface and the lower second strip section that guarantee a very small area, as these are directly adjacent to each other between the connection of these junction surfaces and the connection of the second strip section. On the other hand, it is guaranteed that the current connection from the junction surface to the upper first strip section can likewise be extremely short, because the insulated junction surface also abuts or is adjacent to the first (upper) strip section. Thus, due to the junction surface being adjacent to the two strip sections, a low-inductance connection occurs. The first strip section and the second strip section are provided on both sides of the junction surface.

[0004] The first surface extends within the (upper) first strip section and preferably also extends into the intermediate section up to the (lower) second strip section. This enables a direct low-inductance connection of the potential of the first surface to the contact points in the (lower) second strip section. Based on the connection surface section, the first surface is adjacent to the (lower) second strip section, enabling a very short connection. The terms "lower" and "upper" relate to a plan view of a module as shown, for example, in FIG. 1, where the longitudinal direction of the support or conductor path layer runs from left to right. The term "strip section" is also used abbreviated as "strip". These strips are aligned with each other, in particular, in a direction perpendicular to the first direction (i.e., perpendicular to the longitudinal direction).

[0005] Thus, in the intermediate section, connection surface sections (which are in particular parts of the first surface extending within the first strip) and insulated joint surfaces are provided alternately along the extension of the strip (i.e., along the first direction or the longitudinal direction). The first surface and the insulated joint surfaces extending across the first strip section and the intermediate section are adjacent to the (lower) second strip section but are electrically separated from the (lower) second strip section, preferably via a groove in the conductor path layer. With respect to the connection surface section (i.e., the part of the first surface), this means a very short connection means to the second (lower) strip section, and with respect to the insulated joint surface, this means contact means located very close to the contact means of the second (lower) strip section. Thereby, the supply parts to these contact points can be located very close to each other. Based on the narrow guidance of these supply parts, a low inductance will occur.

[0006] Finally, the connection surface section of the first surface, which also extends within the (upper) first strip section, enables a contact location for the supply section that is substantially centered between the first strip section and the second strip section. This allows the contact points for the supply section to be arranged at approximately equal distances from components such as transistors located within or on the strip sections. Substantially the same signal propagation time occurs for the transistors of the various strip sections. As a result, switching edges formed by components on or within the first strip section reach the contact section on the connection surface section at approximately the same time as switching edges formed within or on the second strip section. This avoids asymmetry during drive control, so there is no need to adapt the signal propagation time in the control unit. Rather, the temporal symmetry for the components of the two strips results solely from the layout of the conductor path layer. The terms used here are related in particular to the depiction of FIG. 1, which is explained in more detail in the description of the figures. The strip sections described in this specification are in particular suitable for mounting transistors and are therefore also referred to as transistor strip sections.

[0007] The conductor path layer described in this specification has a layout having a first surface, a second surface, and an insulated joining surface. These three elements are separated from each other in the conductor path layer and are in particular electrically separated by the structure of the conductor path layer. Thus, the surfaces of the conductor path layer are individualized, and the structure of the conductor path layer sets the electrical separation of the surfaces. The separation of the surfaces can be set by etching or milling or other structuring measures.

[0008] The conductor path layer is further geometrically divided into two strip sections and an intermediate section located between these strip sections. The division into these sections is merely conceptual or functional, whereas the surfaces in the conductor path layer are materially and particularly electrically separated from each other. The division into strips does not necessarily mean an electrical division, but it does not exclude an electrical division. The strip sections and the intermediate section are directly adjacent to each other (in a direction perpendicular to the first direction). These sections preferably completely cover the support or the output area of the support. In particular, these sections are aligned in a direction perpendicular to the first direction. Like these surfaces, these sections are with respect to the largest side surface of the support (i.e., in a plan view rather than a cross-sectional view). The conductor path layer is particularly the conductive outer layer of the support. The strip sections each particularly reach from the outer edge of the conductor path layer to the intermediate section. These outer edges extend along the first direction, particularly along the longest edge of the support. The strip sections and the intermediate section preferably reach from one side of the conductor path layer to the opposite side, and these sides are perpendicular to the outer edges. When the support is rectangular, these sides are the shorter sides of the rectangle, and the outer edges are the longer sides of the rectangle.

[0009] The first surface extends across the first strip section and also across the connection surface section. These connection surface sections project from the first strip section into the intermediate section and are particularly adjacent to the second strip section. The portion of the first surface located within the first strip section and the connection surface section are electrically connected to each other and are preferably also connected by an integral formation or electrical connection elements. The first surface is electrically insulated from the second surface (by the structure of the conductor path layer). This is because there is a gap extending through the entire thickness of the conductor path layer between them. This gap or the resulting groove extends between the second surface and the connection surface section.

[0010] The insulated joint surface is, on the one hand, surrounded by the connection surface section of the first surface (inside the intermediate section) and the part of the first surface that extends within the first strip section, and is further surrounded by the second surface section. The second surface may have an edge that extends substantially along the first direction (the plurality of strip sections or the intermediate section also extends along the first direction). The first surface and the joint surface approach this edge (except for the grooves that electrically separate them). The edge parallel to this may correspond to the outer edge.

[0011] The connection surface section and the insulated joint surface approach the second surface. However, the connection surface section and the insulated joint surface are electrically insulated from the second surface by a structure within the conductor path layer. Between the first surface, the second surface, and the joint surface, the conductor path layer has an insulating structure that extends through the entire thickness of the conductor path layer. These structures are preferably recesses, such as gaps or grooves. The spacing that occurs between these surfaces corresponds to the minimum creep interval, thereby ensuring that these surfaces are sufficiently insulated from each other.

[0012] The first surface, the second surface, and the joint surface extend within the same conductor path layer. Thus, the conductor path layer is structured only by the groove that separates the second surface from the first surface and the joint surface, and the groove that separates the insulated joint surface from the first surface. In particular, along the first direction, the joint surface and the connection surface section may be repeatedly continuous a plurality of times, thereby enabling a symmetric connection with respect to the propagation time. This ensures that, in particular, the components on the first surface and the components on the second surface are similarly contact-connected from an electrical perspective (i.e., from the perspective of the inductance coverage of the connection, and from the perspective of the propagation time and the resistance of the connection).

[0013] One side of the conductor path layer preferably forms the outside of the support. In other words, the conductor path layer preferably forms the upper or lower side of the support, rather than the intermediate layer of a multilayer support. The support further has an insulating layer on which the conductor path layer is deposited. The conductor path layer is in particular a metal layer, for example a layer made of copper or a copper material or a layer made of aluminum or an aluminum material. The insulator may be a plastic, a plastic composite material or preferably a ceramic insulator. The support may be formed, for example, as a circuit board, for example as a printed circuit board, as a DCB circuit board or as an IMS circuit board. The support may be formed as a single layer, in which case the layer is formed by the conductor path layer, or the support may be formed as a multilayer, in which case one of the two layers is formed by the conductor path layer. It is also possible to provide another conductive layer inside the support, in which case the conductor path layer is the outer layer of the support. The outer layer may be provided with an insulating coating. This coating is removed in the area where the contact points for the supply lines or the areas where the components are to be attached are located.

[0014] The conductor path layer is structured and thus forms a conductor path structure. These conductor path structures include, as described herein, a first surface, a second surface and / or an insulated joint surface. In particular, the conductor path layer extends in one plane. In the case of a single-layer configuration of the support, the support can be connected to a cooling body on the side opposite to the conductor path layer. The insulating layer of the support may be connected to the cooling body, or the conductive layer of the support may be connected to the cooling body, and on the opposite side of this conductive layer, the conductor path layer is provided. The half-bridge module may be provided, mounted or not mounted.

[0015] The support is used, in particular, inside the half - bridge module. The (mounted) half - bridge module has a plurality of high - side transistors connected in parallel with each other and a plurality of low - side transistors connected in parallel. The high - side transistors are connected in series to the low - side transistors via connection points. While the connection points can be used as phase terminals or load terminals, the two ends of this series - connection circuit can be connected to a supply voltage, i.e., two supply potentials. The high - side transistors can be arranged within (or on) the second strip section using this configuration, whereas the low - side transistors can be arranged on (or preferably within) the first strip section (or on the first surface). Since the two strip sections described above are suitable for transistor placement, these strips are also referred to as transistor strips.

[0016] The support may be rectangular. In this case, the longer side corresponds to the first direction, along which the strip sections also extend. Horizontally with respect to this, the first strip section, the intermediate section, and the second strip section are positioned side by side. The support may further have an output section where the strip sections and the intermediate section are located, and may have at least one other section, for example, for bonding technology, filters, control units, etc. Preferably, however, the support is closed by the edges of the two strip sections. These strip sections are arranged on opposite sides of each other, and in this case, the edges perpendicular to this close the strip sections and the intermediate section in the longitudinal direction. The first direction preferably extends along the longer edge of the rectangle of the support, but may also extend along the shorter edge of the rectangle of the support.

[0017] Accordingly, a half-bridge module is proposed that includes a support having a conductor path layer. The support is particularly deposited on an insulating layer and has an uncovered surface (upper side) on the side opposite to the side (lower side) of the conductor path layer adjacent to the insulating layer. The conductor path layer has three sections in the form of strips. These strips each extend along a first direction. These strips extend parallel to each other in this direction. The conductor path layer has a first transistor strip section, a second transistor strip section, and an intermediate section (which can also be referred to as the strip intermediate section since it has the shape of a strip like the other two strip sections). The shape of the strip section is particularly rectangular, and the length of each rectangle corresponds to the length of the conductor path layer, and the width of the conductor path layer is formed by the sum of the widths of each strip section and the width of the intermediate section.

[0018] The conductor path layer is structured and formed according to the layout as described above. The intermediate section is located between the first transistor strip section and the second transistor strip section. Accordingly, in a direction transverse to the first direction, i.e., along the width of the conductor path layer, there are columns, namely the first transistor strip section, the intermediate section, and the second transistor strip section. These sections are particularly with respect to the plane in which the conductor path layer extends. That is, these strips extend in the same surface or the same plane. These strip sections and the intermediate section preferably fill the conductor path layer mostly or completely. These strip sections and the intermediate section are a functional division of the conductor path layer and not necessarily an electrical division. In particular, there is a first surface that extends within both the first strip section and the intermediate section, and there is no electrical division between the surface partial region extending within the intermediate section and the surface partial region extending within the first strip section.

[0019] Within the intermediate section, a connection surface section of the first surface extends. This first surface also extends within the first transistor strip section. The connection surface section is electrically connected to the surface extending within the first strip section. Preferably, the first strip section is substantially completely or at least mostly filled by the first surface, and in the intermediate section, only a partial region of the intermediate section is covered by (and forms) the first surface.

[0020] In the intermediate section, insulated joint surfaces are further located. These insulated joint surfaces are filled in the same way as the partial regions of the intermediate section. However, these partial regions do not overlap with the connection surface section. In particular, the connection surface section is electrically separated from the joint surfaces. The electrical separation or insulation between the joint surfaces and the connection surface section relates to the conductor path layer, and this conductor path layer may have a separating structure within the conductor path layer for electrical separation. In other words, the joint surfaces are insulated from the connection surface section by the fact that the surfaces of the conductor path layer forming the joint surfaces are separated from the connection surface section within the conductor path layer. However, this does not necessarily mean that these two surfaces can be electrically connected to each other outside the conductor path layer, for example, indirectly connected via components or the like. Therefore, the joint surfaces are insulated from the connection surface section so that the conductor path layer itself does not form a connection between these two surfaces or surface sections. The insulation of the joint surfaces from the connection surface section is caused by a physical separation in the conductor path layer, for example, by providing a groove between the joint surfaces and the connection surface section. Similarly, the second surface (of the same conductor path layer) may be separated from the connection surface section and also from the joint surfaces in the second strip section.

[0021] In the intermediate section, the insulated joint surfaces and the connection surface section are provided alternately along a first direction. The first direction extends along the longitudinal direction of the strip section or the longitudinal direction of the conductor path layer or the support, or along the longitudinal direction of the intermediate section. This first direction is perpendicular to a second direction. The first direction and the second direction are the directions in which the conductor path layer extends in a planar manner. The two directions are perpendicular to the extension of the thickness of the conductor path layer.

[0022] Along the second direction, the first strip section, the intermediate section, and the second strip section are positioned side by side. In other words, in the second direction, the area of the first surface located within the first strip section, the connection surface sections and the bonding surfaces alternately provided in the first direction, and thirdly, the second surface or the second strip section are positioned side by side. Since the connection surface sections and the bonding surfaces are alternately provided in the first direction (and inside the intermediate section), in particular, at the first longitudinal position, the first strip section, the connection surface section, and the second strip section are positioned side by side, and at the second longitudinal position, the first strip section, the bonding surface, and the second strip section are positioned side by side. In a first cross-section perpendicular to the first direction, the first surface may be adjacent to the second surface (including the connection surface section), whereas in a second cross-section perpendicular to the first direction, the first surface, the bonding surface, and the second surface are positioned side by side. The first cross-section and the second cross-section are in different positions in the first direction (i.e., the longitudinal direction).

[0023] Preferably, the connection surface section is adjacent to the second transistor strip section. A second surface of the conductor path layer that extends substantially or substantially completely into the second strip section is electrically insulated from the connection surface section (which belongs to the first surface). These joining surfaces are preferably also adjacent to the first transistor strip section, but are preferably electrically separated from the first surface that extends, inter alia, within the first strip section. The joining surface is electrically separated from the connection surface section inside the conductor path layer. The surfaces mentioned here are, in particular, the conductive surfaces of the conductive layer formed by the conductor path layer. These sections do not necessarily have to be understood as electrically separated partial regions of the conductor path layer with respect to the geometric division of the conductor path layer. While the first surface extends within the first strip section and within the intermediate section (as the connection surface section), thus causing a connection between the surface regions of different strips, the second surface extends within the second strip section, whereby the surface within the second strip section is separated from the intermediate section and the inner first strip section of the conductor path layer. The surface inside the first strip section and the surface inside the intermediate section are provided separately from the surface within the second strip section. This separation is effected by a separation structure within the conductor path layer.

[0024] The connection surface section or the first surface and / or the bonding surface is adjacent to the second transistor strip section but is not electrically connected (using the conductor path layer) to the second surface located within the second strip section. The bonding surface, in particular, is adjacent to the second strip section but is not electrically connected (using the conductor path layer) to the second surface located within the second strip section. The bonding surface is preferably provided electrically separated by the conductor path layer from the first surface, in particular the portion of the first surface located within the first strip section, and the connection surface section. The conductor path layer can exert a separating action by being structured in conductor paths or pads or having a separating structure such as a recess between the surfaces to be separated. The conductor path layer, in particular, exerts an insulating action by having grooves or recesses extending through the entire thickness of the conductor path layer. These grooves or gaps or recesses establish a material separation between the surfaces, surface sections or surface partial regions of the conductor path layer. However, since the support includes at least one insulating layer on which the conductor path layer is mounted, a mechanical connection occurs (although this mechanical connection is electrically insulated) despite the material separation within the conductor path layer.

[0025] The connection surface section preferably widens towards the second transistor strip section. In other words, the proportion of the first surface forming the connection surface section widens towards the second transistor strip section. Thus, this widening occurs along the second direction or perpendicular to the first direction, particularly in the plane of the conductor path layer. Alternatively or in combination with this, the bonding surface tapers towards the second transistor strip section. Here, the decreasing width is referred to as tapering. This tapering or decreasing width also relates to the extension along the second direction. The widening or tapering relates to the dimension in the longitudinal direction, i.e., along the first direction, of the corresponding surface or section. Alternatively, the width of the connection surface section may not change or decrease from the first strip section towards the second strip section. Similarly, it is possible for the bonding surface to widen or for the width not to change from the first strip section towards the second strip section. The width is here also considered to be the dimension in the longitudinal direction (= first direction). As an alternative possibility, it may be assumed that the bonding surface has a wider width at the location where the bonding surface is adjacent to the first strip section than at the location or edge where the bonding surface is adjacent to the second surface or the second strip section. Between these locations, the extension may be discontinuous or tapering and widening may be provided. Furthermore, the width of the connection surface section is preferably narrower at the location where the connection surface section is adjacent to the first strip section than at the edge where the connection surface section is adjacent to the second strip section or the second surface. The thickness of the conductor path layer is preferably constant (except where the conductor path layer has a recess).

[0026] The joint surface may have a plurality of connection points in a region adjacent to the first strip section. From each connection point, at least one connector may extend into the first strip section, preferably extending to the mounting surface for the component or to the component itself. Furthermore, the joint surface may have connecting points, which in particular comprise joint elements and are configured to contact-connect the supply potential. Furthermore, the connection surface section may have a plurality of connection points in the region of the connection surface section adjacent to the second strip section. From each connection point, at least one connector may extend into the second strip section, in particular extending to the mounting surface for the component or to the component itself. If a plurality of connectors extend from one connection point, these connectors may be connected to a plurality of components in one of the plurality of strip sections, or may lead to a plurality of mounting surfaces within the corresponding strip section. Furthermore, a plurality of connectors extending in a direction away from the same connection point may be connected to the same component in one of the plurality of strip sections, or may lead to the same mounting surface, thereby increasing the current-carrying capacity. A plurality of connector groups may extend in a separating direction from at least one joint surface and / or at least one connection surface section, each group having a plurality of connectors provided for connecting the same component or extending towards the same mounting surface.

[0027] The first surface and / or the second surface are preferably each a continuous surface. In particular, the partial region of the first surface extending within the first strip section is a continuous surface together with the connection surface section (or at least directly electrically connected). This partial region of the first surface extending within the first strip section is in particular formed as a continuous strip, in particular as a strip continuous along the first direction (and also along the second direction).

[0028] The connection surface section, which is also regarded as the first surface, is not continuous in the first direction and is provided alternately with the joint surface. Starting from a partial region of the first surface extending within the first strip section, that is, starting from the continuous strip, these connection surface sections extend towards the second transistor strip section. The connection surface section extends in particular up to the second surface. That is, the connection surface section has an edge (which may extend along the first direction) located on the side opposite to the second surface or the second strip section. In particular, in the conductor path layer, a groove (or another separating structure) is located between the edge of the connection surface section indicating the second surface or the second strip section and the second strip section or the second surface itself. The second surface may have an edge located on the side opposite to this edge of the connection surface section. The edge of the joint surface provided on the side of the second surface or the second strip section also preferably extends substantially along the first direction. By continuously forming the connection surface section and the partial region of the first surface extending within the first strip section, particularly easy electrical connection of the contact element or connection element in the connection surface section to the component in the first strip section, for example, becomes possible.

[0029] The second strip section is provided with a second surface. This second surface is formed conductively, for example, from a copper material, an aluminum material or another conductive material. The second surface is formed as a surface that is continuous in the first direction. The second surface is insulated from the first surface, i.e., in particular from the connection surface section, and from the bonding surface (using a separation structure within the conductor path layer). Preferably, a groove is located between the second surface on the one hand and the connection surface section and the bonding surface of the first surface on the other hand, preferably extending through the entire thickness of the conductor path layer. The second surface may have a mounting surface for transistors. These transistors or the belonging mounting surfaces are preferably juxtaposed along the first direction. These transistors may extend along one or more rows along the first direction. These rows extend along the first direction. Mounting surfaces may occur that are offset from each other perpendicular to the first direction, in particular periodically or alternately. This occurs especially when the mounting surfaces are arranged in a plurality of rows (parallel rows) along the first direction. Thus, these mounting surfaces are located side by side along the first direction on the second surface, in particular side by side along one or more rows. These rows extend along the first direction. Embodiments of half-bridge modules having mounting surfaces are in particular non-mounted half-bridge modules, where here the arrangement of the mounting surfaces on the second surface already ensures that the spacing with respect to the bonding surface and the connection surface section is small, thereby resulting in a low-inductance layout. The mounting surfaces are in particular configured for mounting SMD components such as transistors.

[0030] The first surface preferably has a mounting surface in the first strip section as well. The mounting surface of this is suitable for the mounting surface for transistors as described above, i.e., it is formed for the SMD mounting of bare die transistors or for the mounting of transistors based on another connection technology. The mounting surfaces are positioned side by side along the first direction. Similar to the above-described mounting surfaces, these mounting surfaces are spaced apart from each other and positioned side by side along the first direction and are not directly adjacent to each other. These mounting surfaces can be arranged in one or more rows extending along the first direction. In other words, these mounting surfaces may be provided at different heights with respect to the direction perpendicular to the first direction, i.e., they may have alternating different intervals with respect to the center line along the first direction. The half-bridge module with such mounting surfaces is not particularly mounted. The mounting surface is formed for high-current applications, i.e., for a continuous current of at least 10 A or at least 100 A. This also applies to the transistors in the mounted module.

[0031] A connection surface section of the first surface extending from the first strip section to the second strip section (and thus extending into the intermediate section) results in a very low-resistance connection that can be manufactured inexpensively. Furthermore, the above-described arrangement of the mounting surfaces in the first strip section automatically results in a short connection section to the bonding surface (located in the intermediate section), whereby the connection to the first surface or to components or bonding elements on the bonding surface can be realized with low inductance.

[0032] On the first surface, on the joining surface and within the second strip section (i.e., on the second surface), groups of joining elements are preferably provided respectively. These groups of joining elements provided on the first surface are preferably located within the first strip section, and thus are located along a strip of the first surface that extends continuously in the first direction. Each group of joining elements preferably has a plurality of joining elements that are (spaced apart) side by side along the first direction. One group may have a plurality of subgroups of joining elements, and these subgroups are located side by side in the direction of the first direction along a column respectively, but these columns are offset from each other perpendicularly to the first direction. These joining elements may be formed as sintered pads, contact surfaces, soldering pads, welding surfaces, joining pins, joining metal sheet pieces or mounting holes. The joining elements particularly have a planar section that extends on the conductor path surface, whereby a planar connection to the conductor path layer is formed. Joining pins may be provided, and these joining pins are, for example, press-fitted into the conductor path surface or are mounted on the conductor path surface (by, for example, welding, for example friction welding, soldering or sintering, etc.). The joining elements are electrically conductive. Preferably, supply lines, particularly joining metal sheet pieces, are used, and the supply lines have an end section that is mounted planar on the conductor path surface. For each first surface, each second surface and the joining surface, a plurality of end sections or contact locations are preferably provided respectively for this purpose, whereby the connection of the supply lines is distributed. The contact locations belonging to the same potential are preferably located (spaced apart) side by side along the first direction. In one example, the joining elements are formed as mounting holes, whereby, for example, joining using a screw connection or a press-fit pin connection or a groove connection becomes possible.

[0033] A group of bonding elements preferably refers to elements that are electrically connected to each other via a conductor path layer and are particularly arranged side by side or extending along a first direction. When a second strip section or a second surface is provided for a positive DC voltage supply potential and the bonding surface is provided for a negative DC voltage supply potential, a low inductance is generated only in the vicinity of the corresponding bonding element. In particular, the bonding elements on the first surface may be associated with phase potentials. In this case, on one side, a bonding surface for the phase is generated on the first surface, and on the other side, bonding elements on the second strip section and the bonding surface are generated, and these are associated with the DC voltage supply potential. In this way, the coupling between the clock-controlled signal at the phase potential and the potential of the supply voltage can be blocked or reduced. The bonding elements at the phase potential are preferably outside the region extending from the bonding elements at the first supply potential to the bonding elements at the second supply potential.

[0034] The semiconductor module with the bonding surface is preferably not mounted. However, this arrangement of the bonding surface provides, as described above, low-inductance connection means and generally a low-inductance layout.

[0035] In one embodiment, it is assumed that a group of bonding elements located on the first surface is provided within an intermediate section. In other words, in this embodiment, the group of bonding elements located on the first surface is located on the connection surface section. This provides a current path for these bonding elements towards the mounting surface on the first surface, and this current path has approximately the same length as the current path to the mounting surface (for the transistor) on the second surface. Based on this symmetry, improved signal characteristics occur, particularly for edges with a fast rise time, and also relate to the resistance of the connection of the mounting surface / transistor. In one embodiment, it is assumed that a group of bonding elements located on the first surface is located at the center between the rows of mounting surfaces in the first strip section and the rows of mounting surfaces in the second strip section. The deviation from this center is preferably 20 mm or less, 15 mm or less, 10 mm or less, or 5 mm or less.

[0036] From these joint surfaces, preferably, a first connector starts. These first connectors, in particular, extend into the first strip section. These connectors are preferably located above the support or above the conductor path layer. These connectors start from the region of the joint surface facing the first strip section. These connectors extend into the first strip section, where they may be connected to contact surfaces. These contact surfaces may be part of the first surface, but may also be formed for the use of components. In particular, the ends of the connectors on the side opposite the joint surface are formed to be materially connected to the contact surfaces of the components. A first connector may start from the joint surface, extend into (or over the upper half of the space above) the first strip section, or a plurality of connectors may be connected to the same joint surface and extend to various locations in the first strip section. This enables connecting a plurality of elements in the strip section to the same joint surface.

[0037] In a further embodiment, it is assumed that the half-bridge module has a second connector connected to the connection surface section. The second connector extends from these connection surface sections across the support into the second strip section. In this case, the second connector starts from the connection surface section and extends into the second strip section in the upper half of the space above the support or the conductor path layer. The second connector has ends located on the side opposite the connection surface section, and these ends are formed to be connected to elements in the second strip section, for example, contact points in the strip section, or preferably, contact surfaces formed for connecting components in the second strip section, for example, formed to be connected to the metallized surface of the component. A plurality of second connectors may extend from the connection surface section in a diverging direction into the second strip section.

[0038] The connecting body is formed in particular as a bonding wire or a bonding strip and may be manufactured from a conductive material such as a copper material or an aluminum material. In particular, the second connecting body is connected to the connection surface section in the region adjacent to the second strip section. These connecting bodies may be formed integrally or as multiple parts, in particular with end contact elements and conductors connecting these end contact elements to each other. The end contact elements may be formed, for example, as pins, screw elements or bonded metal sheet pieces, or may be formed as conductor ends bonded thereon.

[0039] The half-bridge module may be provided as a partially mounted, mounted or unmounted module. In particular, surface-mounted components may be mounted on the half-bridge module, i.e., SMD components may be mounted. The half-bridge module may be mounted as a mounted half-bridge module with a first transistor and a second transistor. A first transistor may be mounted on a first surface of the conductor path layer located within the first strip section. In other words, the first transistor is located on a surface section of the first surface located within the first strip section, i.e., on a surface section of the first surface that is continuous along the first direction. A second transistor may be mounted on a second surface extending within the second strip section. In the case of an unmounted half-bridge module, these strip sections are provided for mounting the transistors, and in the case of a mounted half-bridge module, since transistors are mounted on these strip sections, these strip sections can also be referred to as the first transistor strip section and the second transistor strip section. In addition to mounting by SMD technology, mounting by insertion technology or embedding technology is also possible.

[0040] These transistors each have a first output path contact surface facing the conductor path. The first output path contact surface is connected to the first surface. These contact surfaces are the contact surfaces of the transistors and are thus connected to the emitter, collector, source, or drain of the transistors. The transistor further has a second output path contact surface on the side opposite the first contact surface. Thus, the second contact surface is accessible from above in the case of a mounted transistor and, in particular, forms the surface above the conductor path layer. However, the first contact surface cannot be accessed from above in the case of a mounted transistor. This is because the first contact surface faces the conductor path layer and is thus covered by the transistor itself.

[0041] The second output path contact surface is likewise a contact surface connected to the collector, emitter, drain, or source of the transistor. The first contact surface and the second contact surface are connected to various electrodes of the transistor. Thus, the first contact surface may be connected to the collector, while the second contact surface is connected to the emitter, or vice versa. The first contact surface may be connected to the source of the transistor, while the second contact surface is connected to the drain, or vice versa.

[0042] The connection of the second contact surface is provided via a connecting body, in particular via the connecting body described in this specification. The second contact surface of the first transistor, which is provided on the first surface, is connected to a bonding surface (in the intermediate section of the conductor path layer). The second contact surface of the second transistor is connected to a connection surface section. This connection is direct and is effected in particular via a first connecting body and a second connecting body. The connecting body extends across the support. The first connecting body, which connects the bonding surface to the contact surface of the first transistor, extends from the bonding surface into the first strip section, in particular onto the contact surface of the first transistor. The connecting body connected to the connection surface section extends to the contact surface of the second transistor, which is connected in the second strip section. These connecting bodies effect an electrically conductive connection between the contact surface of the transistor and the bonding surface or the connection surface section. These connecting bodies can be directly adjacent to the contact surface or a connection layer, for example a sintered layer, a solder interlayer and / or an electrically conductive buffer layer for reducing mechanical stress, can be located between the contact surface and the connecting body. The above-mentioned contact surface (= metallization surface) is an output path contact surface.

[0043] The transistor can further have a signal contact surface so designated herein. Preferably, the half-bridge module in the mounted form has a half-bridge formed by a low-side transistor element, a high-side transistor element and an inner connection between these transistor elements. Each transistor element of the half-bridge is preferably formed by a plurality of transistors connected in parallel. The current-carrying capacity for the resulting transistor element is multiplied by the parallel connection circuit of the transistors. The inner connection includes the first surface or at least a partial region of the first surface. The inner connection is effected in particular via the connection surface section. The inner connection can further have a connecting body, in particular a connecting body extending from the connection surface section into the second strip section.

[0044] In an embodiment, the inner connection between transistor elements leads from a first contact surface of a first transistor to a first surface, in particular to a section of the first surface extending within a first strip section, from where the first surface is further guided to a connection surface section. The inner connection is further guided from the connection surface section (i.e., the first surface) by means of a connection body leading to a second contact surface of a second transistor. Thus, starting from the first transistor or the contact surface of the first transistor, the portion of the inner connection extends along a surface section of the first surface located within the first strip section, and from there, this inner connection is further guided through a connection surface section that also belongs to the first surface and is located in an intermediate section.

[0045] By the connection surface section abutting against a second surface or a second strip section, only a short distance is created for the connection body that further guides the inner connection from the connection surface section to the second transistor. The inner connection may further have connection elements located on the contact surface of the transistor, such as a soldering layer, a solder intermediate layer, a sintered layer, and / or a conductive buffer layer for reducing mechanical stress. The first transistor and the second transistor are located on a strip section with an intermediate section therebetween, but a short, well-conductive connection (which is a portion of the inner connection) is created by means of a conductor path layer due to the connection surface section protruding from the first strip section to the second strip section.

[0046] The two ends of the half-bridge on the opposite side are preferably realized by a bonding surface on one side and a second surface (in the second strip section) on the other side. The bonding surface and the second surface may each have an output contact field (or other bonding element), whereby, for example, a DC supply voltage can be applied thereto. In particular in this case, the bonding surface forms a terminal for the negative supply potential, and the second surface forms a terminal for the negative DC voltage supply potential. The output contact field provided on the bonding surface may form the negative terminal for the half-bridge. The output contact field provided on the second surface may form the positive terminal for the half-bridge. The output contact field provided on the first surface may form the phase terminal for the half-bridge (and may be connected to their inner connections).

[0047] The first surface may be formed as a connection point or a terminal for the phase potential or the AC potential. In particular, the first surface can be used as a load terminal.

[0048] The transistors can each have at least one signal contact surface. The signal contact surface of the first transistor is preferably provided on the side of the transistor facing the longitudinal edge on the outer side, i.e., opposite to the intermediate section (with respect to the first direction). The signal contact surface of the second transistor is preferably provided on the side of the second transistor facing the second longitudinal edge opposite to the first longitudinal edge, i.e., opposite to the intermediate section. Thereby, the signal contact surfaces can be contact-connected from the outside at a short distance. The signal contact surface is in particular a control signal contact surface, such as a gate contact or a base contact. Furthermore, the signal contact surface can be used as a monitoring signal terminal, such as a temperature signal terminal or a current measurement terminal.

[0049] The half-bridge module can further have a filter circuit (in a non-mounted form, a partially mounted form, or a fully mounted form). In particular, a filter circuit that shorts high-frequency signal components is mounted on the half-bridge module. The filter circuit may be formed as a snubber filter. The filter circuit may be arranged within the second transistor strip section, particularly on the second surface. Further, the filter circuit may be arranged on the bonding surface. Furthermore, a filter circuit may be provided, which has at least one component on the second surface or within the second strip section and at least one component on the bonding surface (or connection surface section).

[0050] The half-bridge module is particularly a half-bridge module of an inverter module, and the inverter module includes a plurality of half-bridge modules. The inverter module may be formed as a vehicle traction inverter. The half-bridge module is particularly a high-voltage module having a nominal voltage of more than 60V or at least 200V, 400V or 800V. Further, a vehicle-side charging circuit provided with a power factor correction filter having at least one of these half-bridge modules may be provided. Finally, a vehicle-side clock-controlled DC voltage converter in which an operating switch is driven by the half-bridge module may be provided.

Brief Description of the Drawings

[0051]

Figure 1

Figure 2a

Figure 2b

Figure 2c

Figure 3

[0052] FIG. 1 schematically shows a plan view of a half-bridge module M including a support T on which a conductor path layer is located. The conductor path layer is structured on a plurality of surfaces F1, F2, that is, divided from an electrical perspective, and for more detailed explanation, hereinafter it is geometrically or functionally divided into a plurality of sections LA, ZA, HA.

[0053] The sections used for the geometric division of the conductor path layer are a first strip section LA, a second strip section HA, and an intermediate section located between these strip sections. In the illustrated example, these strip sections are directly adjacent to the intermediate section. Thus, the illustrated surface or the entire conductor path layer is divided into two strip sections and an intermediate section having reference signs LA, HA, and ZA. The intermediate section ZA also has a strip shape. These sections are aligned perpendicular to a first direction R1.

[0054] The strip sections LA, HA, and the intermediate section ZA are shown in the form of (rectangular) strips extending in their relatively long dimensions along a first direction R1. Perpendicular to the direction R1, a second direction extends in the plane of the figure, and along the second direction, the first strip section LA, the intermediate section ZA, and the second strip section HA are located side by side (in this order). The direction R1 extends along the length of the illustrated rectangular support, and in contrast, the direction R2 extends in the width (that is, along the shorter dimension of the rectangle). The entire surface or the upper side of the support is divided into sections LA, HA, and ZA. A support having an output area divided into sections LA, ZA, and HA may be provided in addition to at least one other region.

[0055] The first face F1 extends, on the one hand, within the first strip section LA. In this case, in FIG. 1, the face F1 almost completely fills this strip section. The face F1 further extends within the intermediate section ZA, forming the connection face section VF. The first face is continuous within the first strip section (in particular in the direction R1), whereas the first face is repeatedly interrupted within the intermediate section ZA in the direction R (by the insulated joint face P). Thus, a plurality of connection face sections VF arise that belong to the first face F1 and branch off from the continuous face area of the face F1 in the first strip section. In other embodiments, a first face consisting of two parts is envisaged, which comprises a first part in the section LA and a second part (which is the connection face section VF) in the section ZA, and the first part and the second part are connected via a connecting element, but both belong to the same conductor road surface.

[0056] Within the intermediate section ZA, a joint face P further extends, and the joint face P is electrically separated from the first face (i.e., also from the connection face section VF) (i.e., can take a different electrical potential). In FIG. 1, the joint face P alternates with the connection face section VF along the direction R1. The connection face section VF extends from the first strip section LA towards the second strip section HA and is adjacent to the second strip section HA. The joint face P also extends within the intermediate section ZA from the first strip section LA to the second strip section HA (and is electrically separated in the conductor road surface by the face F2 within the intermediate section ZA). The extension of the joint face P within the intermediate section ZA from the first strip section LA to the second strip section HA is perpendicular to the direction R1 (and along the support T).

[0057] The first surface F1 and the joint surface P are insulated from the second surface F2. A gap L exists between the intermediate section ZA and the second strip section HA. This gap electrically separates the second surface (and thus the second strip section) from the first surface F or the connection surface section VF of the first surface F and the joint surface P. The gap L is represented in the form of a groove extending along the direction R1. Along the groove, the thickness of the conductor path layer is completely interrupted. By having a gap extending along most of the outer edge of the joint surface P, the joint surface P is also insulated from the first surface F1. Thus, the joint surface is insulated by the groove from the connection surface section VF and from the surface area of the first surface F1 extending within the first strip section LA. With respect to the second surface F2, the joint surface P (and the first surface or the connection surface section VF of the first surface) is separated by the illustrated gap L. This separation results in the electrical insulation of the second surface F2 from the first surface F1 and the electrical insulation of the second surface F2 from the joint surface P. For this purpose, the support T has an insulating layer on which the conductor path layer is formed.

[0058] Thus, the conductor path layer is structured by the grooves or gaps described above. The grooves or gaps define the layout of the conductor path layer. According to another way of thinking, the outer edges of these surfaces or the conductor path layer define the layout of the conductor path layer or the half-bridge module.

[0059] In the schematic FIG. 1, the joint surface P has a substantially rectangular cross-section. This also applies to the connection surface section VF. However, this is just one of many possibilities, schematically representing that the connection surface section VF and the joint surface P together substantially completely fill the intermediate section ZA, that the connection surface section VF and the joint surface P extend substantially up to the second surface F2 or the second strip section HA, and that thereby the connection surface section VF and the joint surface P can be in contact connection by a short connector V' from the second surface F2.

[0060] Figures 2a to 2c schematically show some other embodiments of the geometric configuration of the joint surface P or the connection surface section VF.

[0061] The embodiment of the half-bridge module M shown in FIG. 1 is a mounted half-bridge module including a first transistor LT and a second transistor HT. The first transistor LT is provided on the first surface F1 in the first strip section LA. Thus, the first transistor is attached to a partial region of the first surface F1 that is continuous along the direction R1 (or located within the first strip section LA). From this continuous surface region of the first surface F1, the connection surface section VF extends toward the second strip section HA.

[0062] The second transistor HT is accommodated on the second surface F2 and thus within the second strip section HA. The second transistors HT are positioned side by side along the direction R1 at regular intervals. The first transistors LT are also positioned side by side along the first direction R1 at regular intervals on the first surface F1 (in the first strip section LA). Two rows of transistors are formed in each edge region on the opposite side of the support T or the conductor road surface (i.e., within the mutually separated first strip section LA and second strip section HA). A connection surface section VF or a joint surface P extends between the first transistors on one side and the second transistors on the other side. In other words, a second strip section extends between the rows of transistors LT, HT, and the surface or surface section provided there is used for connecting the transistors.

[0063] Inside the conductor path layer, the bonding surface P is electrically insulated from the first surface F1 (and also from the second surface F2). However, there is a connection body V that connects the bonding surface P to the transistor LT. A variation is shown in which one bonding surface is connected to a plurality of transistors (here two) via a plurality of connection bodies V (two are shown in the figure). For this purpose, each transistor LT has an output path contact surface OK, from which the connection body V extends towards the bonding surface P. The output path contact surface OK is, in particular, the metallization layer of the transistor LT and relates to the output terminals (drain, source, emitter or collector) of the transistor. The connection body V may in particular be a wire, a metal sheet piece, a conductive bridge element, a bonding tape or a bonding strip and may for example consist of an aluminum material or a copper material or another conductive material. Shown is that the larger bonding surfaces P (the three left - hand bonding surfaces P in FIG. 1) are each connected to two transistors or two contact surfaces OK. The bonding surface P, i.e., the right - most located bonding surface, is the smaller one and is connected to only one transistor LT. Thus, these bonding surfaces P can be connected to different numbers of transistors simultaneously, and the bonding surfaces P may be of different sizes.

[0064] The same applies to the connection surface section VF which may have different widths (dimensions in the direction R1). The width of the connection surface section VF shown on the far left is narrower than the width of the connection surface section VF following it on the right. Here too, the connection surface section VF is connected to a different number of transistors LT. The three larger connection surface sections VF are connected to two transistors LT, whereas the narrower connection surface section VF is only connected to one transistor LT for linking. However, despite the different numbers or surface sizes or widths, no asymmetry occurs from an electrical point of view. The second transistor HT also has output path contact surfaces OK’ respectively. These may be formed in the same way as the output contact surface OK which is the output surface. The connection surface section VF is connected to the corresponding contact surface OK’ of the transistor HT via each connecting body V’.

[0065] Each transistor LT is connected to one of the plurality of joint surfaces P shown in the figure. Each transistor LT is connected to one of the plurality of connection surface sections VF shown in the figure. However, additional connection surface sections or joint surfaces may be provided which have no connection to the transistor, i.e., no connection leading through the connecting bodies V, V’.

[0066] FIG. 1 shows a plurality of groups of bonding elements 1, 2, 3. The first group of bonding elements 1 is located on the connection surface section VF. Generally, the groups of bonding elements 1 are located on the first surface F1. Thus, an embodiment may be provided in which the first group of bonding elements 1 is provided on the first surface F1 in the first strip section LA, rather than on the first surface F1 in the intermediate section ZA as shown. In other words, the bonding elements may be located on the surface area of the first surface F1 that is continuous in the direction R1, i.e., located within the first strip section LA. Thus, there are two possibilities for arranging the first group of bonding elements 1. Thus, it is possible to arrange the first group of bonding elements 1 on the connection surface section VF as shown, or, as indicated by reference numeral 1', to arrange the first bonding element at the edge region of the first strip section LA, opposite to the intermediate section ZA. Thus, a group of the first bonding elements 1' arranged between the transistors LT in the first strip section LA is shown. The group of the first bonding elements 1 or the first bonding elements 1' includes bonding elements arranged (and spaced apart from each other) along the direction R1. Thereby, the potential of the first surface can be connected to the (first) connection conductor guiding the potential of the first surface F1 at a plurality of locations. This is in particular the phase potential or the load potential, which, from an electrical point of view, corresponds to the potential of the inner connection of the half-bridge.

[0067] Furthermore, a group of the second bonding elements 2 is shown. Each bonding surface P shown has (at least) one bonding element 2. These bonding elements 2 are provided to be connected to the same (second) connection conductor, i.e., are interconnected via this connection conductor. The second bonding elements are provided to guide the same potential, in particular the DC voltage supply potential (e.g., negative supply potential). The group of the second bonding elements 2 is located on the bonding surface P and thus within the intermediate section ZA.

[0068] In the illustrated embodiment, the group of first joining elements 1 and the group of second joining elements 2 extend along direction R1 and are provided in two rows located within the intermediate section ZA. By using the joining elements arranged as indicated by reference numeral 1, connection paths to various transistors LT, HT having substantially equal lengths are made possible. By the joining element indicated by reference numeral 1', connection to the first surface F1 is made possible at locations on the side opposite to the second strip section. Furthermore, these locations are separated from the joining surface P or the joining element 2 by at least half the width of the first strip section.

[0069] The group of third joining elements 3 is provided within the second strip section HA, that is, on the second surface F2. These joining elements are also arranged along rows extending in direction R1. Generally, the various groups of joining elements 1, 1', 2, and 3 can be provided in a plurality of rows, and these rows are offset from each other substantially perpendicular to direction R1 (in particular, along the support T).

[0070] A connecting body V that connects the contact surface OK of the transistor LT to the joining surface P is shown. Similarly, a connecting body V' that connects the connection surface section VF to the contact surface OK' of the transistor HT is shown. When no transistor is mounted on the half-bridge module M, this layout alone makes it possible to configure the connecting bodies V, V' to be correspondingly short and for the connecting bodies V, V' to extend from the connection surface section VF or the joining surface P into the strip sections LA, HA. In the non-mounted embodiment, at the location where the transistor is written in FIG. 1, there are also located a mounting surface for the transistor or a joining element for the transistor, such as a conductive connection element or the like.

[0071] Figure 1 shows a mounted half - bridge module M comprising transistors having signal contacts SK in addition to output contact surfaces OK, OK'. Illustrated are transistors each having two signal contacts. These may be formed, for example, as gate terminals or Kelvin terminals (temperature signal terminals) or sensor terminals (current detection terminals). Transistors having three signal contact surfaces SK, SK' may also be provided, or transistors having only one signal contact surface SK, SK' may also be provided.

[0072] In the layout of the conductor path layer shown in Figure 1, since both the bonding surface P and the connection surface section VF extend between the two strip sections LA, HA, a direct and short connection path results for the transistors in the first strip section LA as well as for the transistors in the second strip section HA in order to realize a half - bridge. The illustrated transistors LT are connected in parallel with each other. This also applies to the transistors HT within the second strip section HA. This parallel connection circuit is achieved by the fact that the first transistors LT are mounted on the same first surface F1 and that all of the second transistors HT are mounted on the second surface F2. Furthermore, the parallel connection circuit of the first transistors LT is obtained by a bonding conductor (also referred to as a connection conductor path) not shown or a short - circuit connection not shown that makes the bonding surfaces P contact - connect to each other, thereby short - circuiting these bonding surfaces P. Furthermore, the parallel connection circuit of the second transistors HT is obtained by the fact that these second transistors HT are each connected (via the connector V') to the connection surface section VF that converges on the first surface F1 or the first strip section. This is because surface 1 is continuous in the first strip section.

[0073] The bonding element 2 is, in particular, a bonding element at a negative potential, and the bonding element 3 is a terminal for a positive potential. These two potentials are the potentials of the supplied DC voltage. The bonding element 1 forms a terminal for the potential of the connection point or the internal connection between two transistor elements of the illustrated half-bridge module resulting from various transistor groups. The potential of the bonding element 1 may be used, for example, as a load terminal for an electromechanical device or as a phase terminal. This also applies to the bonding element 1'. A first bonding conductor may be provided, and the first bonding conductor is connected to the first bonding element 1. The first bonding conductor may be a phase terminal of the half-bridge module. A second bonding conductor may be provided, and the second bonding conductor is connected to the second bonding element 2. The second bonding conductor may be a negative supply potential conductor of the half-bridge module. A third bonding conductor may be provided, and the third bonding conductor is connected to the third bonding element 3. The third bonding conductor may be a positive supply potential conductor of the half-bridge module.

[0074] A filter circuit may be provided, and for example, a snubber or the like that can be arranged at the location indicated by the cross may be provided. These locations are in the edge region of the second surface adjacent to the intermediate section (or the bonding surface P). For example, the filter circuit may be formed as SMD components respectively mounted on the second surface F2. Further, the filter circuit may be connected to the bonding surface by a bonding connection. When the filter circuit has surface contacts, the bonding connection can extend from the bonding surface P on the side opposite to the filter circuit to the surface contacts. This type of SMD component further has another contact surface, and by this another contact surface, the SMD component is mounted on the second surface. The filter circuit may be located on the bonding surface P in the edge region of the bonding surface P adjacent to the second surface.

[0075] Figures 2a, 2b, and 2c show another geometric embodiment for representing the joint surface P or the connection surface section VF. Each surface F1 in FIGS. 2a to 2c corresponds to the first surface F1 inside the first strip section LA and inside the surface area of the first surface F1 that forms the connection surface section. The first partial region of the first surface F1 is located within the first strip section LA and is continuous in the direction R1. From there, the connection surface section VF extends towards the second strip section HA or the second surface F2. A joint surface P is provided in the intermediate section located between the first surface area of the surface F1 and the second surface F2. It is schematically shown that the connection surface section VF and the joint surface P (including the part of the conductor path layer) substantially completely cover the intermediate section, and only the gap between the connection surface section VF and the joint surface P interrupts the conductor path layer that would otherwise be continuous.

[0076] In FIG. 2a, the joint surface P has a first region that is adjacent to the continuous partial region of the first surface F1 and is substantially rectangular, followed by a tapered section in the direction towards the second surface F2. A trapezoidal tapered portion is shown. In the direction of the second surface F2, there is another partial region that is rectangular like the first partial region but is formed narrower than the first partial region. The connection surface section VF shown in FIG. 2 is complementary to this. Starting from the partial region of the first surface F1 located within the first strip section, in the direction towards the second surface F2, the shown connection surface section VF extends substantially according to a rectangle, followed by a section with a widened width. Similarly, in the direction towards the second surface F2, there is also a rectangular partial region that follows, but this partial region is wider than the first-mentioned partial region. Thus, FIG. 2a shows an insulated joint surface P in the shape of a trapezoid, and in this trapezoid, rectangles of different sizes follow in a direction perpendicular to the parallel side pairs of the trapezoid.

[0077] Figure 2b shows another embodiment of the insulated joint surface P. This embodiment has a first rectangular partial region, followed by a trapezoid in the direction towards the second surface F2. Similar to FIG. 2a, in FIG. 2b, the corresponding, adjacent connection surface section VF is formed complementary to the joint surface P. The subsequent trapezoid tapering towards the second surface F2 is adjacent to the second surface F2.

[0078] Figure 2c shows another embodiment with a trapezoidal joint surface P. The wider side of the parallel side pair of the trapezoid of the joint surface P is adjacent to the surface section of the first surface F1 located within the first strip section, while the narrower side of the parallel side pair of the trapezoid is adjacent to the second surface F2 (but not in contact connection with the second surface F2). Here too, it can be seen that the connection surface section VF may generally be formed complementary to the joint surface P.

[0079] The groove between the joint surface P and the connection surface section VF extends around most of the joint surface P and preferably has a substantially constant width along this extension. Also, a groove is provided between the second surface F2 on one hand and the connection surface section VF and the joint surface P on the other hand. This can similarly have a constant width in the extension direction. Since the two grooves described above completely surround the joint surface P, the electrical insulation inside the conductor path layer caused by these grooves makes the joint surface P inside the conductor path layer an electrical island, that is, insulated (from the surrounding area) inside the structured conductor path layer. The conductor path layer includes, in addition to the conductive surface, a structure that causes an electrical interruption inside the conductor path layer.

[0080] FIG. 3 shows an alternative embodiment of a filter circuit having a capacitor component C and a resistor component R. An intermediate island ZI is located between the second face F2 and the bonding face P, separated from the second face F2, the bonding face P, and also from the first face or the connection face section VF by a groove. The intermediate island ZI is a conductive face insulated from adjacent regions of the conductor path layer. The intermediate island ZI is located in the edge region of the second strip section HA facing the intermediate section ZA, the edge region of the intermediate section ZA facing the second strip section HA, or a region including these two edge regions.

[0081] The resistor R starts from the second face F2 and bridges the groove between the second face F2 and the intermediate island ZI. In other words, the resistor R connects the second face F2 to the intermediate island. The intermediate island ZI is further connected to the bonding face P via the capacitor C, and the capacitor C bridges the groove between the intermediate island and the bonding face. The capacitor and the resistor may be provided at the interchanged locations. A series RC element connecting the second face F2 to the bonding face P is obtained. In this way, the RC element connects the two DC voltage supply potentials of the module as a high-pass.

[0082] The filter circuit shown in FIG. 3 may be arranged particularly at or above the location indicated by the cross in FIG. 1. The intermediate island is formed as part of the conductor path layer. Similarly, the second face, the first face, and the bonding face form parts of the conductor path layer, but these are separated from each other (inside the conductor path layer).

Claims

1. A half-bridge module (M) comprising a support (T) having a conductor path layer, wherein the conductor path layer has a first transistor strip section (LA), a second transistor strip section (HA) and an intermediate section (ZA) each extending along a first direction (R1), the intermediate section (ZA) being arranged between the first transistor strip section (LA) and the second transistor strip section (HA), within the intermediate section (ZA), a connection surface section (VF) of a first surface (F1) also extending within the first transistor strip section (LA) and a bonding surface (P) insulated therefrom are alternately provided in the first direction (R1), a half-bridge module (M).

2. The connection surface section (VF) is adjacent to the second transistor strip section (HA) and insulated from the second transistor strip section (HA), and / or the bonding surface (P) is adjacent to the first transistor strip section (LA), the half-bridge module (M) according to Claim 1.

3. The connection surface section (VF) widens towards the second transistor strip section (HA), and / or the bonding surface (P) tapers towards the second transistor strip section (HA), the half-bridge module (M) according to Claim 1 or 2.

4. The first surface within the first transistor strip section (LA) extends as a strip continuous in the first direction (R1), from the continuous strip, the connection surface section (VF) extends towards the second transistor strip section (HA), the half-bridge module (M) according to Claim 1, 2 or 3.

5. A second surface (F2) extends within the second transistor strip section (HA), the second surface (F2) being insulated from the first surface (F1) and the bonding surface (P) and having a mounting surface for transistors (HT) extending in one or more rows along the first direction (R1), the half-bridge module (M) according to any one of Claims 1 to 4.

6. The first surface (F1) within the first transistor strip section (LA) has a mounting surface for transistors (HT) that extends in one or more columns along the first direction (R1). The half-bridge module (M) according to any one of claims 1 to 5.

7. On the first surface (F1), on the bonding surface (P) and within the second transistor strip section (HA), groups of bonding elements (1, 2, 3) are provided respectively. The bonding elements (1, 2, 3) are formed as sintering pads, soldering pads, welding surfaces, bonding pins, bonding metal sheet pieces or mounting holes. The half-bridge module (M) according to any one of claims 1 to 6.

8. The group of bonding elements (1) located on the first surface (F1) is provided within the intermediate section (ZA), or is located centrally between the row of transistor mounting surfaces in the first transistor strip section (LA) and the row of transistor mounting surfaces in the second transistor strip section (HA) with a deviation, The deviation is 20 mm or less, 15 mm or less, 10 mm or less or 5 mm or less. The half-bridge module (M) according to claim 7.

9. It has a first connector (V) connected to the bonding surface (P) and extending from the bonding surface (P) across the support (T) into the first transistor strip section (LA), The half-bridge module (M) further has a second connector (V'), and the second connector (V') is connected to the connection surface section (VF) and extends from the connection surface section (VF) across the support (T) into the second transistor strip section (HA). The half-bridge module (M) according to any one of claims 1 to 8.

10. The first transistor (LT) and the second transistor (HT) are mounted. The first transistor (LT) is mounted on the first surface (F1) of the conductor path layer within the first transistor strip section (LA), The second transistor (HT) is mounted on the second surface (F2) extending within the second transistor strip section (HA). The half-bridge module (M) according to any one of claims 1 to 9.

11. The first output path contact surface of the first transistor (LT) is connected to the first surface (F1), The first output path contact surface of the second transistor (HT) is connected to the second surface (F2), The second output path contact surface (OK) of the first transistor (LT) is connected to the bonding surface (P) across a first connection body (V) extending across the support (T), The second output path contact surface (OK') of the second transistor (HT) is connected to the connection surface section (VF) across a second connection body (V') extending across the support (T). The half-bridge module (M) according to claim 10.

12. Having a half-bridge comprising a low-side transistor element, a high-side transistor element, and an inner connection between the transistor elements, The low-side transistor element is formed by the first transistor (LT), the high-side transistor element is formed by the second transistor (HT), and the inner connection includes the first surface (F1). The half-bridge module (M) according to claim 10 or 11.

13. The first transistor (LT) and the second transistor (HT) each have a signal contact surface (SK, SK'), The signal contact surface (SK) of the first transistor (LT) is provided on the side of the first transistor (LT) opposite to the intermediate section (ZA), and the signal contact surface (SK') of the second transistor (HT) is provided on the side of the second transistor (HT) opposite to the intermediate section (ZA). The half-bridge module (M) according to claim 10, 11 or 12.

14. At least one filter circuit (FI; C, R) is mounted, The at least one filter circuit (FI; C, R) is arranged within the second transistor strip section (HA) and / or on the bonding surface (P). The half-bridge module (M) according to any one of claims 1 to 13.

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