Throttle Valve and Foreline Cleaning Using a Microwave Source

Abstract

An exemplary semiconductor processing system may include a processing chamber that defines a processing region. The system may include a foreline coupled to the processing chamber, the foreline defining a fluid conduit. The system may include a radical generator having an inlet and an outlet. The outlet may be in fluid communication with the foreline. The system may include a gas source in fluid communication with the inlet of the radical generator. The system may include a throttle valve coupled to the foreline downstream of the radical generator.

Description

Technical Field

[0001]

[0001] This technology relates to components and devices for semiconductor manufacturing. More specifically, this technology relates to process chamber components and other semiconductor processing equipment.

Background Art

[0002]

[0002] Integrated circuits are realized by a process of creating intricately patterned material layers on a substrate surface. To create the patterned material on the substrate, a controlled method for forming and removing the material is required. Precursors are often dispensed to a processing region for uniformly depositing or etching the material on the substrate. Many aspects of the process chamber can affect the process uniformity, such as the uniformity of the process conditions within the chamber, the uniformity of the flow passing through the components, and the parameters of other processes and components. Even a slight discrepancy across the substrate can affect the forming or removing process.

[0003]

[0003] Therefore, there is a need for improved systems and methods that can be used to create high-quality devices and structures. These needs and other needs are addressed by this technology.

Summary of the Invention

[0004]

[0004] An exemplary semiconductor processing system can include a process chamber that defines a processing region. The system can include a foreline coupled to the process chamber, the foreline defining a fluid conduit. The system can include a radical generator having an inlet and an outlet. The outlet can be in fluid communication with the foreline. The system can include a gas source in fluid communication with the inlet of the radical generator. The system can include a throttle valve coupled to the foreline downstream of the radical generator.

[0005]

[0005] In some embodiments, the radical generator may include a microwave radical generator. The radical generator may be positioned proximate to the throttle valve. The gas source may include a gas panel. The gas source may include a remote plasma source. The system may include a cooling line coupled to the radical generator. During operation of the radical generator, the pressure within the processing chamber may be greater than the pressure within the foreline. The foreline may include a J-shaped pipe defining a first inlet, an outlet, and a second inlet disposed at a bend of the J-shaped pipe. The radical generator may be coupled to the second inlet.

[0006]

[0006] Some embodiments of the present technology may encompass a semiconductor processing system. The system may include a processing chamber defining a processing region. The system may include a foreline coupled to the processing chamber. The foreline may define a fluid conduit. The system may include a radical generator in fluid communication with the foreline. The system may include a throttle valve coupled to the foreline downstream of the radical generator.

[0007]

[0007] In some embodiments, the system may include a gas source coupled to an inlet of the radical generator. The gas source may include a gas panel. During operation of the radical generator, the pressure within the processing chamber may be greater than the pressure within the foreline. The system may include at least one cooling line coupled to a cooling fluid source. The radical generator may include a fluid inlet and a fluid outlet. The at least one cooling line may be in fluid communication with the fluid inlet and the fluid outlet. The radical generator may include an RF radical generator or a microwave radical generator. The foreline may include a J-shaped pipe defining a first inlet, an outlet, and a second inlet disposed at a bend of the J-shaped pipe. The radical generator may be coupled to the second inlet.

[0008]

[0008] Some embodiments of the present technology may include a method of cleaning a throttle valve. The method may include flowing a first gas into a processing chamber. The method may include discharging the first gas from the processing chamber into a foreline. The method may include flowing a second gas into a radical generator connected to the foreline. The method may include generating a plasma of the second gas in the radical generator. The method may include flowing a third gas through the radical generator to feed plasma radicals into the foreline. The method may include flowing the first gas, the second gas, and the third gas through a throttle valve connected to the foreline downstream of the radical generator.

[0009]

[0009] In some embodiments, the first gas may include a plasma generation precursor. The first gas may include an inert gas or a cleaning gas. The flow rate of the first gas may be greater than the flow rates of the third gas and the second gas. The plasma may include a capacitively coupled microwave plasma.

[0010]

[0010] Such technology may provide a number of benefits over conventional systems and techniques. For example, embodiments of the present technology may utilize locally generated plasma radicals to actively clean residues deposited in the foreline and / or throttle valve. Additionally, the components can be modified to adapt to any number of chambers or processes. These and other embodiments are described in more detail below in conjunction with the following description and the accompanying figures, along with their many advantages and features.

[0011]

[0011] A further understanding of the nature and advantages of the disclosed technology can be obtained by reference to the following portions of this specification and the drawings.

Brief Description of the Drawings

[0012]

Figure 1

[0012] FIG. is a top view of an exemplary processing system according to some embodiments of the present technology.

Figure 2

[0013] Schematic cross-sectional view of an exemplary plasma system according to some embodiments of the present technology.

Figure 3

[0014] Schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology.

Figure 4

[0015] Schematic isometric view of an exemplary foreline assembly according to some embodiments of the present technology.

Figure 5

[0016] Operation of an exemplary method for cleaning a throttle valve according to some embodiments of the present technology.

DETAILED DESCRIPTION OF THE INVENTION

[0013]

[0017] Some of the figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes and are not to be considered to scale unless expressly stated to be so. Further, as schematic diagrams, the figures are provided to aid understanding and may not include all aspects or information compared to a realistic depiction and may include material emphasized for illustrative purposes.

[0014]

[0018] In the accompanying figures, similar components and / or features may have the same reference numerals. Further, various components of the same type may be distinguished according to the reference numerals by letters that distinguish between similar components. Where only a first reference numeral is used in this specification, the description is applicable to any one of the similar components having the same first reference numeral regardless of the letter.

[0015]

[0019] The plasma enhanced deposition process may excite one or more constituent precursors to facilitate film formation on a substrate. To develop semiconductor structures, any number of material films can be created, including conductive and dielectric films, as well as films to facilitate the transfer and removal of materials. For example, a hard mask film can be formed to facilitate patterning of the substrate while protecting underlying materials that are to be maintained in other ways. In many processing chambers, some precursors are mixed within a gas panel and supplied to a processing region of the chamber where a substrate can be disposed. While components of the lid stack can affect the flow distribution into the processing chamber, many other process variables can similarly affect the uniformity of deposition.

[0016]

[0020] Precursors and / or other process gases are often released from the chamber through several forelines. The pressure and fluid conductance of the released gas can be controlled by one or more throttle valves connected to the forelines. As the precursor passes through the foreline and throttle valve, radicals from the precursor collide inside the foreline and throttle valve, and residues deposit on the foreline and throttle valve. This can be particularly problematic for temperature-sensitive deposition processes because a large temperature difference between the processing region and the foreline / throttle valve can cause the deposition rate in the foreline and / or throttle valve to be significantly higher than in the processing region. When these residues accumulate within the throttle valve, the residues reduce the cross-sectional area of the flow path of the throttle valve, effectively changing the fluid conductance through the throttle valve and causing drift of the throttle valve. For example, the accumulation of residues over time requires the throttle valve to be opened to a greater extent (drift) to maintain the desired conductance due to the reduction in the cross-sectional area of the flow path. This drift of the throttle valve changes the cross-sectional area of the flow path associated with each angle of the throttle valve and, over time, requires the throttle valve to be opened to a greater angle considering the reduction in conductance and change in pressure of the gas flowing through the throttle valve. As the angle increases, it becomes more difficult to control the throttle valve to supply accurate conductance and fluid pressure.

[0017]

[0021] Conventionally, to counter the effects of throttle valve drift, it was necessary to flush the foreline and throttle valve with a hot purge gas such as NF3 that removes residues and cleans the surface of the throttle valve. However, these hot purge gases can be harmful to chamber components. Therefore, in conventional systems, a careful balance must be struck between the desire to reverse and / or reduce throttle valve drift and the need to minimize exposure of chamber components to such hot purge gases.

[0018]

[0022] This technique overcomes these problems by connecting a radical generator to the foreline, and is often connected in a location close to the throttle valve. The radical generator can generate plasma radicals that can clean residues deposited in the foreline and / or throttle valve. The cleaning radicals can be generated during deposition operations, during chamber cleaning operations, and / or during the idle time of the chamber. This can help clean the throttle valve while having a neutral impact on the throughput of the processing chamber. Thus, this technique can reduce the occurrence of throttle valve drift and reduce (or eliminate) the need for a high-temperature throttle valve purge.

[0019]

[0023] The remaining disclosure details a particular cleaning process that utilizes the disclosed technology in the normal manner, but it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers as well as the processes that can occur in the described chamber. Thus, this technique should not be considered limited to use only in these particular cleaning processes or chambers. After discussing one possible system and chamber that may include lid stack components according to an embodiment of the technology, further variations and adaptations of this system according to embodiments of the technology will be described.

[0020]

[0024] FIG. 1 shows a top view of one embodiment of a processing system 100 by a deposition chamber, an etching chamber, a baking chamber, and a curing chamber according to an embodiment. In the figure, a pair of front-opening unified pods 102 are received by a robot arm 104 and placed in a low-pressure holding area 106 before being placed in one of the substrate processing chambers 108a-108f positioned in tandem sections 109a-109c to supply substrates of various sizes. A second robot arm 110 can be used to transfer the substrate wafer from the holding area 106 to and from the substrate processing chambers 108a-108f. Each of the substrate processing chambers 108a-f can be equipped to perform several substrate processing operations including the formation of a stack of semiconductor materials described herein, in addition to other substrate processes including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and annealing, ashing, etc.

[0021]

[0025] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric film or other film on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) are used to deposit a dielectric material on the substrate, and a third pair of processing chambers (e.g., 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-f) may be configured to deposit dielectric films alternately laminated on the substrate. Any one or more of the described processes may be performed in a chamber separated from the manufacturing system shown in various embodiments. It will be understood that further configurations of deposition chambers, etching chambers, annealing chambers, and curing chambers for dielectric films are envisioned by system 100.

[0022]

[0026] FIG. 2 shows a schematic cross-sectional view of an exemplary plasma system 200 according to some embodiments of the present technology. The plasma system 200 can include a pair of processing chambers 108 that are attached to one or more of the tandem sections 109 described above and can include faceplates or other components or assemblies according to embodiments of the present technology. The plasma system 200 can generally include a chamber body 202 having sidewalls 212, a bottom wall 216, and internal sidewalls 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include the same components.

[0023]

[0027] For example, the processing region 220B (the components of which may also be included in the processing region 220A) can include a pedestal 228 disposed within the processing region through a passage 222 formed in the bottom wall 216 within the plasma system 200. The pedestal 228 can provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 can include a heating element 232, such as a resistive heating element, that heats and controls the substrate temperature at a desired processing temperature. The pedestal 228 can also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0024]

[0028] The body of the pedestal 228 can be connected to the stem 226 by the flange 233. The stem 226 can electrically connect the pedestal 228 to the power output or power box 203. The power box 203 can include a drive system that controls the raising and movement of the pedestal 228 within the processing area 220B. The stem 226 can also include a power interface for providing power to the pedestal 228. The power box 203 can also include interfaces for power meters and thermometers, such as a thermocouple interface. The stem 226 can include a base assembly 238 adapted to be removably coupled to the power box 203. A circumferential ring 235 is shown above the power box 203. In some embodiments, the circumferential ring 235 can be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the upper surface of the power box 203.

[0025]

[0029] The rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing area 220B and may be utilized to position a substrate lift pin 261 disposed through the body of the pedestal 228. The substrate lift pin 261 can selectively space the substrate 229 from the pedestal to facilitate the replacement of the substrate 229 using a robot utilized to transfer the substrate 229 into and out of the processing area 220B through the substrate transfer port 260.

[0026]

[0030] The chamber lid 204 can be connected to the upper part of the chamber body 202. The lid 204 can accommodate one or more precursor distribution systems 208 connected thereto. The precursor distribution system 208 can include a precursor injection passage 240, and the precursor injection passage 240 can supply a reaction precursor and a cleaning precursor into the processing region 220B through the gas supply assembly 218. The gas supply assembly 218 can include a gas box 248 having a shielding plate 244 disposed intermediate the faceplate 246. A radio frequency (RF) source 265 can be connected to the gas supply assembly 218 to supply power to the gas supply assembly 218 to facilitate generating a plasma region between the faceplate 246 of the gas supply assembly 218 and the pedestal 228 which can be a processing region of the chamber. In some embodiments, the RF source can be connected to other parts of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 can be disposed between the lid 204 and the gas supply assembly 218 to prevent conduction of RF power to the lid 204. A shadow ring 206 can be disposed at the outer edge of the pedestal 228 and engage the pedestal 228.

[0027]

[0031] To cool the gas box 248 during operation, an optional cooling channel 247 can be formed within the gas box 248 of the gas distribution system 208. A heat transfer fluid such as water, ethylene glycol, gas, etc. can circulate through the cooling channel 247 so as to maintain the gas box 248 at a predetermined temperature. A liner assembly 227 can be disposed within the processing region 220B adjacent to the side walls 201, 212 of the chamber body 202 to prevent exposure of the side walls 201, 212 to the processing environment within the processing region 220B. The liner assembly 227 can include a circumferential pumping cavity 225 that can be connected to a pumping system 264 configured to exhaust gas and by-products from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 can be formed in the liner assembly 227. The exhaust ports 231 can be configured such that gas can flow from the processing region 220B to the circumferential pumping cavity 225 to facilitate processing within the system 200.

[0028]

[0032] FIG. 3 shows a schematic partial cross-sectional view of an exemplary processing system 300 according to some embodiments of the present technology. FIG. 3 can show further details regarding the components of the system 200. The system 300 is understood to include any features or aspects of the system 200 described above in some embodiments. The system 300 can be used to perform semiconductor processing operations including the deposition of the hard mask materials described above, as well as other deposition, removal, and cleaning operations. The system 300 shows a partial view of the chamber components that can be incorporated into the semiconductor processing system being discussed, and a view across the center of the faceplate, although the faceplate can otherwise be of any size and can include any number of apertures. Any aspect of the system 300 can also be incorporated into other processing chambers or systems, as will be readily understood by those skilled in the art.

[0029]

[0033] System 300 may include a processing chamber including a faceplate 305 through which a precursor may be supplied for processing, and the faceplate 305 may be coupled to a power source for generating plasma within a processing region of the chamber. The chamber may also include a chamber body 310 which, as illustrated, may include sidewalls and a base. As described above, a pedestal or substrate support 315 may extend through the base of the chamber. The substrate support 315 may include a support plate 320 that may support a semiconductor substrate. The support plate 320 may be coupled to a shaft 325 that may extend through the base of the chamber.

[0030]

[0034] The faceplate 305 may be supported directly or indirectly by the chamber body 310. As an example, the faceplate 305 may be supported on a pumping liner 330 and / or an isolator or other liner 335. For example, with an additional liner 335 and / or the faceplate 305 placed on the pumping liner 330, the pumping liner 330 may be placed on a shelf formed by an upper portion of the chamber body 310. The pumping liner 330 may define one or more exhaust ports 340 that enable the flow of gas from the processing region to one or more forelines 350 coupled to the processing chamber. For example, each exhaust port 340 may be in fluid communication with an upper end of one or more exhaust lumens 345 formed within a sidewall and / or base of the chamber body 310. Although the exhaust lumens 345 are shown extending through the sidewalls, it will be understood that other arrangements are possible in various embodiments. The lower end of each exhaust lumen 345 may be coupled to a respective one of the forelines 350. Each foreline 350 may define a fluid conduit for flowing process gas from the processing chamber and guiding the process gas through a throttle valve 355, and the throttle valve 355 may control the fluid conductance through the foreline 350.

[0031]

[0035] The foreline 350 can be connected to a radical generator 360 that can be disposed proximate to the inlet of the throttle valve 355. The radical generator 360 can include at least one inlet 365 connected to a gas source 375, and this gas source 375 can supply one or more gases to the radical generator 360. In some embodiments, the gas source 375 can be a remote plasma unit that supplies gas to the processing chamber. For example, a bypass line can be included that allows a portion of the gas from the remote plasma unit to bypass the chamber and enter the radical generator 360. In other embodiments, the radical generator 360 can include a dedicated gas source 375. For example, the gas source 375 can include one or more gas sticks from a gas panel having one or more fluid supply lines that introduce gas from the gas source 375 to the inlet 365 of the radical generator 360. The outlet 370 of the radical generator 360 can be in fluid communication with the foreline 350 upstream of the throttle valve 355 such that any gas and / or plasma exiting the outlet 370 passes through the throttle valve 355.

[0032]

[0036] In certain embodiments, each foreline 350 can be a J-shaped pipe 357 that includes a first inlet, and an outlet, and a bend of the J-shaped pipe 357 disposed between the first inlet and the outlet and / or a second inlet disposed at another intermediate location, and / or can include the J-shaped pipe 357. The first inlet can be connected to one of the inlet portion of the foreline 350 and / or the exhaust lumen 345, while the outlet can be connected to the outlet portion of the foreline 350 and / or the throttle valve 355. The second inlet can be connected to the outlet 370 of the radical generator 360 such that the throttle valve 355 is disposed downstream of the radical generator 360. Although shown as a J-shaped pipe 357, it will be understood that in other embodiments, other foreline configurations can be utilized to place the radical generator 360 in proximity to the throttle valve 355 and in fluid communication upstream of the throttle valve 355.

[0033]

[0037] The radical generator 360 can take various forms. For example, the radical generator 360 may be a microwave radical generator, an RF radical generator, or other radical generators. In certain embodiments, the radical generator 360 may be a microwave radical generator that uses a magnetron to generate microwave energy, and this microwave energy can then be delivered to the hollow coaxial electrode via a coaxial waveguide. The microwave power can be capacitively coupled to the plasma gas through the electrodes. By using a microwave radical generator instead of an RF radical generator, it may be possible to utilize a smaller radical generator. Furthermore, the microwave radical generator can create a larger number of radicals per unit output and may enable the use of a lower output level to create sufficient radicals to effectively clean the foreline 350 and / or the throttle valve 355.

[0034]

[0038] In some embodiments, the radical generator 360 may include a fluid inlet 380 and a fluid outlet 385 that can be in fluid communication with a coolant source 390 via one or more cooling lines 395. A coolant source 390, such as a process cooling water source, can supply circulating fluid to the fluid inlet 380 of the radical generator 360 via the fluid line 395. In this way, a heat conduction path can be established to reduce the temperature of at least a portion of the radical generator 360. For example, the radical generator 360 may include a circuit that controls the operation of the radical generator 360. This circuit, which is often near the fluid inlet 380 and / or the fluid outlet 385, may need to be maintained below a predetermined temperature to ensure that the circuit continues to operate as designed. The predetermined temperature can vary depending on the radical generator 360, but is often about 100 °C or less, about 90 °C or less, about 80 °C or less, about 75 °C or less, about 70 °C or less, or less. To maintain the temperature of the circuit at such levels, a coolant fluid, which can be water, ethylene glycol, and / or other coolants, can be provided at a temperature of about 100 °C or less, about 90 °C or less, about 80 °C or less, about 75 °C or less, about 70 °C or less, about 65 °C or less, about 60 °C or less, about 55 °C or less, about 50 °C or less, or less.

[0035]

[0039] Although it is mainly discussed in the context of placing a radical generator in proximity to a throttle valve, it should be understood that the present invention is not so limited. Embodiments of the present invention may implement a radical generator anywhere within a processing system where local cleaning is desired. For example, a particular chamber / system component may be identified as being able to benefit from cleaning with locally generated radicals, and the radical generator may be interconnected in a location upstream of the component and in proximity to the component such that the generated plasma radicals can reach the desired component before the lifetime of the radicals elapses.

[0036]

[0040] FIG. 4 shows a schematic isometric view of an exemplary foreline assembly 400 according to some embodiments of the present technology. The foreline assembly 400 may also be included in any of the chambers or systems described above, as well as other chambers or systems that can benefit from the insert. For example, the foreline assembly 400 may include components similar to the foreline 350 and the radical generator 360, and may include any of the features described in connection with such features of FIG. 3. For example, the foreline assembly 400 may include at least a portion of one or more forelines 405. Each foreline 405 may include an inlet 410 that may be directly or indirectly coupled to an exhaust lumen (e.g., exhaust lumen 345) of a processing chamber, and an outlet 415 that may be directly or indirectly coupled to a throttle valve (e.g., throttle valve 355). In some embodiments, each foreline 405 may be in the form of a J-shaped pipe that includes an additional inlet 420 disposed at a curved portion of the J-shaped pipe or other intermediate location. The additional inlet 420 may be downstream of the inlet 410 and upstream of the outlet 415, and may be coupled to a radical generator 425.

[0037]

[0041] The radical generator 425 may be similar to the radical generator 360 and may include any of the features described in connection with the radical generator 360. For example, the radical generator 425 may include at least one inlet 430 connectable to a gas source (e.g., gas source 375). For example, the inlet 430 may include a gas weld connectable to a gas panel to transfer gas from the gas panel to the radical generator 425. The outlet 435 of the radical generator 425 may be in fluid communication with the foreline 405 upstream of the outlet 415 such that the gas and / or plasma generated by the radical generator 425 and / or the gas and / or plasma passing through the radical generator 425 exits the outlet 415. In some embodiments, the radical generator 425 may include a fluid inlet 440 and a fluid outlet 445 in fluid communication with a cooling fluid source (e.g., cooling fluid source 390), and the fluid inlet 440 and the fluid outlet 445 may be used to circulate cooling fluid through the radical generator 425 to cool the circuit and / or other electrical components of the radical generator 425.

[0038]

[0042] FIG. 5 shows the operation of an exemplary method 500 for cleaning a throttle valve according to some embodiments of the present technology. The method may be performed in various processing chambers including the processing systems 200 and / or 300 described above, and the processing chambers may include forelines and / or radical generators according to embodiments of the present technology, such as forelines 350, 405 and / or radical generators 360 and / or 425. The method 500 may include some optional operations that may or may not be particularly relevant to some embodiments of the methods according to the present technology.

[0039]

[0043] This method may include optional operations before starting method 500, or the method may include additional operations. For example, method 500 may include operations that are executed in an order different from that shown. Method 500 may include, at operation 505, flowing a first gas into the processing chamber. The first gas may create a positive flow through the processing chamber and may pass through the foreline when discharged. The first gas may be a plasma generation precursor, an inert gas, a cleaning gas, and / or other gases. For example, when the throttle valve is cleaned during a deposition operation, the first gas may be a process gas such as a plasma generation precursor, but is not limited thereto. When the throttle valve is cleaned during a chamber cleaning process, the first gas may be a cleaning gas and / or a plasma generation gas that generates plasma radicals used to clean residues from the chamber components. When the throttle valve is cleaned during an idle period of the chamber (i.e., not during a processing operation or a cleaning operation), the first gas may be an inert gas that is simply flowed to create a positive flow and pressure within the foreline.

[0040]

[0044] In operation 510, the method may include releasing a first gas from the processing chamber into the foreline. While the first gas flows through the foreline, method 500 may include, in operation 515, flowing a second gas to a radical generator coupled to the foreline. A plasma of the second gas may be generated within the radical generator in operation 520. The flow of the second gas and the generation of plasma radicals may be adjusted based on a desired throttle valve angle (and the current throttle valve angle). In other words, the generation of radicals may be based on the amount of residue that needs to be cleaned to achieve the desired throttle valve angle. In some embodiments, the second gas may include a plasma generating gas used for the cleaning operation, such as argon. When colliding with the plasma, in operation 525, a third gas may be flowed to the radical generator to feed the radicals of the plasma into the foreline. In certain embodiments, the third gas may include a mixture of argon, NF3, and O2, although many other gases may be utilized as the third gas. The flow rate of the first gas may be greater than the flow rates of the second gas (and radicals) and the third gas, such that the first gas, the second gas (and radicals), and the third gas flow downstream of the radical generator and may pass through a throttle valve coupled to the foreline. The flowed radicals may then react with the residue deposited on the foreline and / or the throttle valve and may help to clean the residue from the surface of the component. To ensure that the flow rate of the first gas is greater than the flow rates of the second gas and the third gas, the volume and / or velocity of the first gas may be greater than the combined velocity and / or volume of the second gas and the third gas, thereby maintaining a positive pressure flow through the foreline in the direction of the throttle valve and helping to prevent backflow of the second gas and the third gas. By preventing backflow, the embodiment may help to supply the plasma radicals to the throttle valve before the lifetime of the radicals elapses and may help to enhance the cleaning effect of the radicals.

[0041]

[0045] As described above, in some embodiments, the cleaning method can be performed during the processing operation of the processing chamber. In such an example, the flow of the first gas can include flowing one or more precursors or other process gases into the processing chamber through one or more of a gas box, a shielding plate, or a faceplate, etc., before supplying the precursor into the processing region of the chamber. Plasma can be generated from the precursor in the processing region, for example, by providing RF power to the faceplate to generate plasma, and / or plasma generated by a remote plasma unit can be supplied to the processing region. The material formed in the plasma can be deposited on the substrate. The precursor (i.e., the first gas) can be discharged from the processing chamber through a foreline where the flow of the first gas mixes with the flows of the second and third gases before passing through the throttle valve.

[0042]

[0046] In some embodiments, method 500 can be performed to clean components other than the throttle valve. For example, one or more components can be identified as being subject to the benefits of the targeted cleaning operation. One or more radical generators can be interconnected with the upstream and proximate gas flow paths of the one or more components. A positive flow of gas can be introduced into the flow path upstream of the radical generator, and then plasma can be generated within the radical generator. A third gas can be flowed through the radical generator to push plasma radicals into the flow path and downstream to the one or more components.

[0043]

[0047] In the above description, for the purpose of facilitating the understanding of various embodiments of the present technology, a number of detailed matters have been specified for illustrative purposes. However, it will be apparent to those skilled in the art that a particular embodiment can be practiced without some of these detailed matters or with additional detailed implementations.

[0044]

[0048] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the essence of the embodiments. Further, to avoid unnecessarily obscuring the present technology, some well-known processes and elements have not been described. Accordingly, the above description should not be construed as limiting the scope of the present technology.

[0045]

[0049] When a range of values is provided, each intervening value between the upper and lower limits of that range is specifically disclosed down to the smallest unit of the lower limit (unless clearly indicated otherwise by the context). Any narrower range between any of the recited values or intervening values not recited in the recited range, and any other recited value or intervening value within that recited range, is also included. The upper and lower limits of the narrower ranges may be included in or excluded from the range individually. Each range where either, neither, or both of the limiting values are included in the narrower range is also included in the present technology, provided that there are no limiting values specifically excluded from the recited range. When the recited range includes one or both of the limiting values, ranges excluding either or both of the included limiting values are also included.

[0046]

[0050] In this specification and the appended claims, the singular forms "a," "an," and "the" include the plural meaning (unless clearly indicated otherwise by the context). Thus, for example, reference to "an aperture" includes a plurality of such apertures, and reference to "the plate" includes reference to one or more plates and their equivalents known to those skilled in the art.

[0047]

[0051] Also, when the terms "comprise(s) / comprising", "contain(s) / containing", and "include(s) / including" are used in this specification and the following claims, they are intended to specify the presence of the stated features, integers, components, or steps, but do not preclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims

1. A semiconductor processing system, comprising: a processing chamber defining a processing region; a foreline connected to the processing chamber, the foreline defining a fluid conduit; a radical generator having an inlet and an outlet, the outlet being in fluid communication with the foreline; a gas source in fluid communication with the inlet of the radical generator; a throttle valve connected to the foreline downstream of the radical generator. A semiconductor processing system comprising the above components.

2. The semiconductor processing system according to claim 1, wherein the radical generator includes a microwave radical generator.

3. The semiconductor processing system according to claim 1, wherein the radical generator is positioned proximate to the throttle valve.

4. The semiconductor processing system according to claim 1, wherein the gas source includes a gas panel.

5. The semiconductor processing system according to claim 1, wherein the gas source includes a remote plasma source.

6. The semiconductor processing system according to claim 1, further comprising a cooling line connected to the radical generator.

7. The semiconductor processing system according to claim 1, wherein during operation of the radical generator, the pressure in the processing chamber is greater than the pressure in the foreline.

8. The foreline comprises a J-shaped pipe defining a first inlet, an outlet, and a second inlet disposed at a curved portion of the J-shaped pipe, and the radical generator is connected to the second inlet.

9. A semiconductor processing system, comprising: a processing chamber defining a processing region; a foreline connected to the processing chamber, the foreline defining a fluid conduit; a radical generator in fluid communication with the foreline; a throttle valve connected to the foreline downstream of the radical generator. A semiconductor processing system comprising the above components.

10. The semiconductor processing system according to claim 9, further comprising a gas source connected to an inlet of the radical generator.

11. The semiconductor processing system according to claim 10, wherein the gas source includes a gas panel.

12. The semiconductor processing system according to claim 9, wherein during operation of the radical generator, the pressure in the processing chamber is greater than the pressure in the foreline.

13. further comprising at least one cooling line connected to a cooling fluid source The radical generator includes a fluid inlet and a fluid outlet, The semiconductor processing system according to claim 9, wherein the at least one cooling line is in fluid communication with the fluid inlet and the fluid outlet.

14. The semiconductor processing system according to claim 9, wherein the radical generator includes an RF radical generator or a microwave radical generator.

15. The foreline includes a J-shaped pipe defining a first inlet, an outlet, and a second inlet disposed at a curved portion of the J-shaped pipe, The semiconductor processing system according to claim 9, wherein the radical generator is connected to the second inlet.

16. A method for cleaning a throttle valve, comprising: Flowing a first gas into a processing chamber; Releasing the first gas from the processing chamber into a foreline; Flowing a second gas through a radical generator connected to the foreline; Generating a plasma of the second gas in the radical generator; Flowing a third gas through the radical generator to feed radicals of the plasma into the foreline; Flowing the first gas, the second gas, and the third gas through a throttle valve connected to the foreline downstream of the radical generator. A method for cleaning a throttle valve.

17. The method for cleaning a throttle valve according to claim 16, wherein the first gas includes a plasma generation precursor.

18. The method for cleaning a throttle valve according to claim 16, wherein the first gas includes an inert gas or a cleaning gas.

19. The method for cleaning a throttle valve according to claim 16, wherein a flow rate of the first gas is greater than a flow rate of the third gas and a flow rate of the second gas.

20. The method for cleaning a throttle valve according to claim 16, wherein the plasma includes capacitively coupled microwave plasma.

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