Evaporation apparatus and evaporation method

Abstract

The present application relates to a vapor deposition apparatus, a vapor deposition system, and a vapor deposition method. The vapor deposition apparatus includes a substrate having a vapor deposition chamber including a first vapor deposition region and a second vapor deposition region that are continuously distributed along a first direction, a guide member positioned in the first vapor deposition region and the second vapor deposition region, and an evaporation source assembly provided on the guide member. The evaporation source assembly includes a first evaporation source and a second evaporation source that are each movably connected to the guide member, are reciprocally movable in the first vapor deposition region and the second vapor deposition region, and are reciprocally movable relative to the guide member along a second direction that intersects the first direction. Embodiments of the present application can meet the vapor deposition requirements of a device, and the vapor deposition system to which it is applied has a low cost, a small occupied space, and a high utilization rate of production capacity.

Description

Technical Field

[0001] This application claims priority to Chinese Patent Application No. 202210820657.7, titled "Evaporation Apparatus, Evaporation System, and Evaporation Method", filed on July 13, 2022, and all the contents of this application are incorporated herein by reference.

[0002] This application relates to the technical field of evaporation, and particularly to an evaporation apparatus, an evaporation system, and an evaporation method.

Background Art

[0003] Conventional display devices are formed using an evaporation process. Conventional evaporation systems need to have one chamber for the evaporation of each film layer. Taking an OLED device as an example, the number of its film layers is currently mainly 10 - 13 layers, and it is necessary to form one evaporation system with 10 - 13 evaporation apparatuses. As a result, the cost of the evaporation system is high, the occupied space is large, and the utilization rate of production capacity is low.

Summary of the Invention

[0004] Embodiments of this application provide an evaporation apparatus, an evaporation system, and an evaporation method. The evaporation apparatus can meet the evaporation requirements of a device, and the evaporation system it applies has a low cost, a small occupied space, and a high utilization rate of production capacity.

[0005] In one aspect, according to an embodiment of this application, there is provided a substrate having an evaporation chamber including a first evaporation region and a second evaporation region continuously distributed along a first direction, a guiding member located in the first evaporation region and the second evaporation region, and an evaporation source assembly provided on the guiding member. The evaporation source assembly includes a first evaporation source and a second evaporation source that are respectively movably connected to the guiding member, can reciprocate between the first evaporation region and the second evaporation region, and can reciprocate relative to the guiding member along a second direction intersecting the first direction.

[0006] Also, in one aspect, an embodiment of the present application provides a vapor deposition system including the above-described vapor deposition apparatus.

[0007] Furthermore, in one aspect, according to an embodiment of the present application, a providing step of providing the above-described vapor deposition apparatus, positioning a first evaporation source in a first vapor deposition region, and positioning a second evaporation source in a second vapor deposition region; a placing step of placing a first substrate to be vapor-deposited in the first vapor deposition region and placing a second substrate to be vapor-deposited in the second vapor deposition region; a vapor deposition step of moving the first evaporation source relative to the guiding member to sequentially vapor-deposit a first vapor deposition layer on the first substrate and the second substrate, and controlling to sequentially form a second vapor deposition layer on the first vapor deposition layer of the first substrate and the first vapor deposition layer of the second substrate by moving the second evaporation source relative to the guiding member.

[0008] According to a further aspect of an embodiment of the present application, the vapor deposition step includes a preliminary vapor deposition step of controlling the first evaporation source so that a first vapor deposition layer is vapor-deposited on the first substrate; a first position adjustment step of controlling the first evaporation source to enter the second vapor deposition region and the second evaporation source to enter the first vapor deposition region; a secondary vapor deposition step of controlling the first evaporation source so that a first vapor deposition layer is vapor-deposited on the second substrate and the second evaporation source so that a second vapor deposition layer is vapor-deposited on the first vapor deposition layer formed on the first substrate; a first feed step of carrying out the first substrate on which the first vapor deposition layer and the second vapor deposition layer are formed and carrying in the next first substrate to be vapor-deposited; a second position adjustment step of controlling the first evaporation source to enter the first vapor deposition region and the second evaporation source to enter the second vapor deposition region; a re-vapor deposition step of controlling the first evaporation source so that a first vapor deposition layer is vapor-deposited on the newly placed first substrate to be vapor-deposited and the second evaporation source so that a second vapor deposition layer is vapor-deposited on the first vapor deposition layer formed on the second substrate; Carry out the second substrate on which the first vapor deposition layer and the second vapor deposition layer are formed, and a second feed step of carrying in the next substrate to be vapor deposited. including The first position adjustment step, the secondary vapor deposition step, the first feed step, the second position adjustment step, the re-vapor deposition step, and the second feed step are repeatedly executed so that the first vapor deposition layer and the second vapor deposition layer are formed on both the first substrate and the second substrate to be vapor deposited by the same vapor deposition apparatus.

[0009] According to the vapor deposition apparatus, vapor deposition system, and vapor deposition method according to the embodiments of the present application, the vapor deposition apparatus includes a substrate, a guide member, and an evaporation source assembly. The vapor deposition chamber of the substrate includes a first vapor deposition region and a second vapor deposition region that are continuously distributed along a first direction. The evaporation source assembly includes a first evaporation source and a second evaporation source located in the same vapor deposition chamber. The first evaporation source and the second evaporation source are each movably connected to the guide member. In order to realize the vapor deposition of two vapor deposition layers on two different substrates to be vapor deposited in the same vapor deposition chamber, both the first evaporation source and the second evaporation source are reciprocally movable in the first vapor deposition region and the second vapor deposition region, and both the first evaporation source and the second evaporation source are reciprocally movable along a second direction with respect to the guide member. The vapor deposition apparatus can meet the vapor deposition requirements of the device and can reduce the number of vapor deposition apparatuses required for the vapor deposition system to which it is applied. Taking an OLED device as an example, the vapor deposition requirements of the multilayer film layer can be met with only half the number of vapor deposition apparatuses of the prior art, the cost is low, the occupied space is small, and the utilization rate of production capacity is high.

Brief Description of the Drawings

[0010] Hereinafter, with reference to the drawings, the features, advantages, and technical effects of exemplary embodiments of the present application will be described.

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DETAILED DESCRIPTION OF THE INVENTION

[0011] The features and exemplary embodiments of each aspect of the present application will be described in detail below. In the following detailed description, by providing many specific details, a comprehensive understanding of the present application is provided. However, it is obvious to those skilled in the art that the present application can be implemented without some of these specific details. The following description of the embodiments is for better understanding of the present application by showing examples of the present application. In the drawings and the following description, at least partially known configurations and technologies are not shown, thereby avoiding the present application becoming unnecessarily ambiguous. And, for clarity, the sizes of some configurations may be exaggerated. Also, the features, configurations or characteristics described below can be combined with one or more embodiments in any suitable manner.

[0012] The directional terms used in the following description are all the directions shown in the drawings and do not limit the specific structure of the vapor deposition apparatus, vapor deposition apparatus and vapor deposition method of the present application. Also, as should be explained, in the description of the present application, unless there are clear regulations and limitations, the terms "attachment" and "connection" should be understood in a broad sense. For example, it may be a fixed connection, a removable connection, or an integral connection, and may also be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the present application according to the specific situation.

[0013] The related display device is formed by using an evaporation process. The conventional vapor deposition apparatus needs to be provided with one chamber for the vapor deposition of each film layer.

[0014] Taking the OLED device as an example, the number of its film layers is currently mainly 10 - 13 layers, and it is necessary to form one vapor deposition system with 10 - 13 vapor deposition apparatuses. Moreover, for every two vapor deposition apparatuses, it is necessary to at least combine one transfer chamber, one transition chamber and a gas assist chamber. As a result, the vapor deposition system formed by the vapor deposition apparatus has a high cost, a large occupied space, and a low utilization rate of production capacity.

[0015] To solve the above problems, embodiments of the present application provide an evaporation device, an evaporation system, and an evaporation method. The evaporation device has two evaporation sources installed simultaneously in one evaporation chamber, that is, at least two layers of film layers can be deposited by the same evaporation device. Thus, the evaporation system can save half of the evaporation device and the corresponding transition chamber, etc.

[0016] To better understand the present application, the evaporation device, evaporation system, and evaporation method according to embodiments of the present application will be described in detail below with reference to FIGS. 1 to 14.

[0017] As shown in FIG. 1, an embodiment of the present application provides an evaporation device 100 including a substrate 10 having an evaporation chamber including a first evaporation region 11 and a second evaporation region 12 continuously distributed along a first direction X, a guiding member 20, and an evaporation source assembly 30. The guiding member 20 is located in the first evaporation region 11 and the second evaporation region 12. The evaporation source assembly 30 is provided on the guiding member 20. The evaporation source assembly 30 includes a first evaporation source 31 and a second evaporation source 32. The first evaporation source 31 and the second evaporation source 32 are respectively movably connected to the guiding member 20. Both the first evaporation source 31 and the second evaporation source 32 are reciprocally movable in the first evaporation region 11 and the second evaporation region 12, and both the first evaporation source 31 and the second evaporation source 32 are reciprocally movable relative to the guiding member 20 along a second direction Y intersecting the first direction X.

[0018] Optionally, the first evaporation region 11 and the second evaporation region 12 are two regions continuously provided in the same evaporation chamber.

[0019] Optionally, the fact that the guiding member 20 is located in the first evaporation region 11 and the second evaporation region 12 is understood to mean that the guiding member 20 may be partially located in the first evaporation region 11 and partially located in the second evaporation region 12.

[0020] Optionally, in the initial state, one of the first evaporation source 31 and the second evaporation source 32 is located in the first deposition region 11 and the other is located in the second deposition region 12. The first evaporation source 31 and the second evaporation source 32 may be movably connected to the guide member 20 such that both move back and forth between the first deposition region 11 and the second deposition region 12 and move back and forth along the second direction Y with respect to the guide member 20 in the same deposition region.

[0021] Optionally, the fact that the first evaporation source 31 and the second evaporation source 32 are movably connected to the guide member 20 respectively may be understood as that the positions of the first evaporation source 31 and the second evaporation source 32 with respect to the guide member 20 are both adjustable. Being movably connected may include a connection method that can adjust the positions of the first evaporation source 31 and the second evaporation source 32 with respect to the guide member 20, such as a sliding connection or a rolling connection.

[0022] Optionally, the intersection angle at which the first direction X and the second direction Y intersect may be greater than 90°, may be less than 90°, or, of course, optionally, the intersection angle at which the first direction X and the second direction Y intersect may be equal to 90°.

[0023] Optionally, the first evaporation source 31 and the second evaporation source 32 may be point sources, or of course, may be line sources. Optionally, they are line sources.

[0024] When the vapor deposition apparatus 100 according to the embodiment of the present application is used, in the initial state within the same vapor deposition apparatus 100, the first evaporation source 31 can be positioned in the first deposition region 11 and the second evaporation source 32 can be positioned in the second deposition region 12. The first substrate to be vapor-deposited in the first deposition region 11 can be placed, and the second substrate to be vapor-deposited in the second deposition region 12 can be placed. Control is performed to move the first evaporation source 31 with respect to the guide member 20 to sequentially vapor-deposit a first vapor-deposited layer on the first substrate and the second substrate. Control is performed to move the second evaporation source 32 with respect to the guide member 20 to sequentially form a second vapor-deposited layer on the first vapor-deposited layer of the first substrate and the first vapor-deposited layer of the second substrate.

[0025] That is, with the same vapor deposition apparatus 100, two different film layers can be vapor-deposited on each of two different substrates respectively. Taking an OLED device as an example, the number of its film layers is currently mainly 10 to 13 layers. Taking 12 layers as an example, based on the vapor deposition method of one film layer in one chamber of the conventional vapor deposition apparatus 100, the conventional vapor deposition system needs to be composed of 12 vapor deposition apparatuses. However, when the vapor deposition apparatus 100 according to the embodiment of the present application is adopted, when vapor-depositing and forming an OLED device, only 6 vapor deposition apparatuses 100 can complete the vapor deposition of 10 to 13 film layers, which not only reduces the cost of the entire vapor deposition system, but also reduces the number of vapor deposition apparatuses 100, reduces the occupied space to approximately half of the original, and can complete the vapor deposition of two different substrates at one time, and the utilization rate of the production capacity of the vapor deposition apparatus 100 and the vapor deposition system to which it is applied is increased.

[0026] As an alternative embodiment, in the vapor deposition apparatus 100 according to the embodiment of the present application, the evaporation source assembly 30 and the guiding member 20 can be switched between a first state in which the first evaporation source 31 is located in the first vapor deposition region 11 and the second evaporation source 32 is located in the second vapor deposition region 12, and a second state in which the first evaporation source 31 moves to the second vapor deposition region 12 and the second evaporation source 32 moves to the first vapor deposition region 11.

[0027] Optionally, in any state, the first evaporation source 31 and the second evaporation source 32 are located in different evaporation regions for the evaporation source assembly 30 and the guiding member 20.

[0028] The vapor deposition apparatus 100 according to an embodiment of the present application can switch the evaporation source assembly 30 and the guide member 20 between a first state and a second state, and in different states, by positioning the first evaporation source 31 and the second evaporation source 32 in different evaporation regions, it is possible to avoid the first evaporation source 31 and the second evaporation source 32 interfering with each other during operation. Further, with the above arrangement, when using the vapor deposition apparatus 100, in at least some sections, the first evaporation source 31 and the second evaporation source 32 are synchronized so that different vapor deposition film layers are formed on different substrates to be vapor-deposited, and it is not only possible to ensure the completion of the vapor deposition of at least two different film layers of the same substrate within the same evaporation chamber, but also to ensure the completion of the vapor deposition of at least two different film layers of different substrates within the same evaporation chamber, thereby improving the utilization rate of production capacity.

[0029] As an alternative embodiment, in the vapor deposition apparatus 100 according to an embodiment of the present application, the first evaporation source 31 and the second evaporation source 32 can move synchronously with respect to the guide member 20.

[0030] That is, within the same time period, the first evaporation source 31 and the second evaporation source 32 can move with respect to the guide member 20 simultaneously.

[0031] Exemplarily, within the same time period, the first evaporation source 31 may move upward along the second direction Y and the second evaporation source 32 may move downward along the second direction Y, and also, for example, within the same time period, the first evaporation source 31 may move rightward along the first direction X and the second evaporation source 32 may move leftward along the first direction X.

[0032] Of course, when the vapor deposition apparatus 100 is used, the first evaporation source 31 and the second evaporation source 32 may move synchronously, and of course, depending on the vapor deposition, one may be fixed and the other may be moved.

[0033] In the evaporation apparatus 100 according to an embodiment of the present application, the first evaporation source 31 and the second evaporation source 32 can be moved synchronously with respect to the guide member 20. Two substrates to be evaporated are placed in the same evaporation apparatus 100. After the first film layer is evaporated on one substrate by the first evaporation source 31, the first evaporation source 31 and the second evaporation source 32 are moved synchronously. As a result, the second evaporation source 32 evaporates and forms the second film layer on the substrate on which the first film layer is formed, and at the same time, the first evaporation source 31 evaporates and forms the first film layer on the other substrate on which no film layer is formed. Thereby, the production efficiency of the evaporation apparatus 100 is effectively improved, and the utilization rate of the production capacity is improved.

[0034] As a selectable embodiment, in the evaporation apparatus 100 according to an embodiment of the present application, the guide member 20 includes a closed ring-shaped edge guide 21 located in the first evaporation region 11 and the second evaporation region 12, and a central guide 22 located in a ring-shaped chamber surrounded by the edge guide 21. The first evaporation source 31 is connected to the edge guide 21 and the central guide 22 and is movable at least along the edge guide 21. The second evaporation source 32 is connected to the edge guide 21 and the central guide 22 and is movable at least along the edge guide 21.

[0035] Optionally, the edge guide 21 may be a closed ring shape and may be an integral loop, or may be formed by joining a plurality of guide rails.

[0036] Optionally, the edge guide 21 may be a polygonal ring, and optionally, a rectangular ring.

[0037] Optionally, the central guide 22 is located in the ring-shaped chamber of the edge guide 21 and may be connected to the edge guide 21. Of course, it may be provided at a distance from the edge guide 21.

[0038] Optionally, the first evaporation source 31 and the second evaporation source 32 may be movably connected to the edge guide part 21 respectively, and the first evaporation source 31 and the second evaporation source 32 may be fixedly connected or movably connected to the central guide part 22.

[0039] In the vapor deposition apparatus 100 according to the embodiment of the present application, the guide member 20 includes an edge guide part 21 and a central guide part 22, and by defining the positional relationship between the edge guide part 21 and the central guide part 22 and the connection relationship between the first evaporation source 31 and the second evaporation source 32, the guide member 20 can meet the requirements for position adjustment of the first evaporation source 31 and the second evaporation source 32, while the overall structure of the guide member 20 is simple, advantageous for molding, and low in cost.

[0040] As an alternative embodiment, in the vapor deposition apparatus 100 according to the embodiment of the present application, the edge guide part 21 is a polygonal ring-shaped track.

[0041] Optionally, the edge guide part 21 may be a quadrilateral ring-shaped track, and may be a ring-shaped track such as a hexagon or an octagon as required, and specifically may be set according to vapor deposition.

[0042] In the vapor deposition apparatus 100 according to the embodiment of the present application, by making the edge guide part 21 a polygonal ring-shaped track, it is easy to adjust the positions of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y, and it is easy to deposit at least two layers of film layers on different substrates to be vapor-deposited in the same vapor deposition apparatus 100.

[0043] As an alternative embodiment, in the vapor deposition apparatus 100 according to the embodiment of the present application, the edge guide part 21 includes a first guide rail 211 provided so as to be distributed along the first direction X and extend along the second direction Y in pairs, and a second guide rail 212 provided so as to be distributed along the second direction Y and extend along the first direction X in pairs, and the first guide rail 211 and the second guide rail 212 are alternately distributed and the start end and the end end are connected.

[0044] Optionally, the number of the first guide rails 211 may be two, and of course, may also be four, six, etc., and optionally, it is two.

[0045] Optionally, the number of the second guide rails 212 may be two, and of course, may also be four or six, and optionally, it is two.

[0046] Optionally, the first guide rails 211 provided in pairs and the second guide rails 212 provided in pairs may form a rectangular frame-shaped guide rail.

[0047] In the vapor deposition apparatus 100 according to the embodiment of the present application, the edge guide part 21 adopts the above structural form, and can simplify the structure of the edge guide part 21 to meet the stable position adjustment requirements of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y.

[0048] As an optional embodiment, in the vapor deposition apparatus 100 according to the embodiment of the present application, the central guide part 22 includes two or more third guide rails 221 distributed along the first direction X and each extending along the second direction Y and connected to the edge guide part 21. The first evaporation source 31 is movably connected to at least one third guide rail 221, and the second evaporation source 32 is movably connected to at least one third guide rail 221.

[0049] Optionally, the number of the third guide rails 221 may be two or more than two. By extending along the second direction Y, the first evaporation source 31 may be movably connected to one third guide rail 221 or movably connected to two or more third guide rails 221. Also, the second evaporation source 32 may be movably connected to one third guide rail 221 or movably connected to two or more third guide rails 221.

[0050] Optionally, the third guide rail 221 may be connected to one of the second guide rails 212 provided such that one end in the second direction Y is paired, and connected to the other of the second guide rails 212 provided such that the other end is paired.

[0051] Optionally, the third guide rail 221 is arranged in parallel at an interval in the first direction X with each first guide rail 211.

[0052] Optionally, the third guide rail 221 may adopt an integral structure with the edge guide part 21. Of course, it may also adopt a separate structure and be connected by welding or the like. Of course, in some other examples, each third guide rail may be connected to be in contact with the edge guide part 21. For example, the two may be in abutment with each other.

[0053] In the vapor deposition apparatus 100 according to the embodiment of the present application, the central guide part 22 includes two or more third guide rails 221 distributed along the first direction X. By defining the engagement relationship between the first evaporation source 31 and the second evaporation source 32 and the third guide rail 221 and the edge guide part 21, it is possible to easily meet the movement requirements of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y, move along the second direction Y in one evaporation region, and at the same time, switch between different evaporation regions along the first direction X, and ensure the vapor deposition requirements of two different film layers for each of the two different substrates.

[0054] It should be noted that the form in which the central guide part 22 includes two or more third guide rails 221 is only an optional embodiment and is not limited to the above form.

[0055] As shown in FIGS. 2 to 4, in some embodiments, the central guide 22 includes a pivot shaft 222, a main connection shaft 223, a first connection arm 224, and a second connection arm 225. The main connection shaft 223 is rotatably connected to the pivot shaft 222 and is rotatable about the pivot shaft 222. One end of the main connection shaft 223 is rotatably connected to the first connection arm 224, and the other end is rotatably connected to the second connection arm 225. The first evaporation source 31 is provided on the first connection arm 224 and is slidably connected to the edge guide 21. The second evaporation source 32 is provided on the second connection arm 225 and is slidably connected to the edge guide 21.

[0056] Optionally, the pivot shaft 222 and the main connection shaft 223 may be provided to intersect, and optionally, they may be provided perpendicular to each other, and the main connection shaft 223 may rotate about the pivot shaft 222.

[0057] Optionally, the main connection shaft 223 may be rotatably connected to the pivot shaft 222 at the central position in its longitudinal direction.

[0058] Optionally, the first connection arm 224 has a predetermined length. One end of the first connection arm 224 along its longitudinal direction is rotatably connected to one end of the main connection shaft 223 and may be connected by a rotating shaft. Accordingly, the second connection arm 225 has a predetermined length. One end of the second connection arm 225 along its longitudinal direction is rotatably connected to the other end of the main connection shaft 223 and may be connected by a rotating shaft.

[0059] Optionally, one end of the first evaporation source 31 is slidably fitted to the edge guide 21, and the other end is connected and fixed to one end of the first connection arm 224 away from the main connection shaft 223. Accordingly, one end of the second evaporation source 32 is slidably fitted to the edge guide 21, and the other end may be connected and fixed to the other end of the second connection arm 225 away from the main connection shaft 223.

[0060] As shown in FIGS. 2 to 4, in the vapor deposition apparatus 100 according to the embodiment of the present application, when the central guide part 22 adopts the above structural form and it is necessary to adjust the positions of the first evaporation source 31 and the second evaporation source 32, by rotationally driving the main connection shaft 223 around the pivot shaft 222 as the rotation center, the main connection shaft 223 rotates to move the first connection arm 224 and the second connection arm 225, and further moves the first evaporation source 31 and the second evaporation source 32 along the edge guide part 21. When the angle at which the main connection shaft 223 rotates around the pivot shaft 222 is 180° or less, the first evaporation source 31 and the second evaporation source 32 can move to the first vapor deposition region 11 or the second vapor deposition region 12 along the second direction Y with respect to the edge guide part 21. When the angle at which the main connection shaft 223 rotates around the pivot shaft 222 exceeds 180°, the first evaporation source 31 and the second evaporation source 32 can be moved to the first vapor deposition region 11 and the second vapor deposition region 12 along the first direction X. Similarly, the position adjustment requirements of the first evaporation source 31 and the second evaporation source 32 can be satisfied.

[0061] As shown in FIG. 5, in some embodiments, in the vapor deposition apparatus 100 according to the embodiment of the present application, the central guide part 22 can simultaneously include two or more third guide rails 221, a pivot shaft 222, a main connection shaft 223, a first connection arm 224, and a second connection arm 225.

[0062] Two or more third guide rails 221 are distributed along the first direction X. Each third guide rail 221 extends along the second direction Y and is connected to the edge guide part 21. The first evaporation source 31 is movably connected to at least one third guide rail 221, and the second evaporation source 32 is movably connected to at least one third guide rail 221. For ease of understanding, an example in which the central guide part 22 includes two third guide rails 221 will be described. The pivot shaft 222 may be located between two adjacent third guide rails 221. The main connection shaft 223 is rotatably connected to the pivot shaft 222 and is rotatable about the pivot shaft 222 as the rotation center. One end of the main connection shaft 223 is rotatably connected to the first connection arm 224, and the other end is rotatably connected to the second connection arm 225. The first evaporation source 31 is provided on the first connection arm 224 and is slidably connected to the edge guide part 21 and one third guide rail 221. The second evaporation source 32 is provided on the second connection arm 225 and is slidably connected to the edge guide part 21 and the other third guide rail 221.

[0063] The vapor deposition apparatus according to the embodiment of the present application includes a central guide part that simultaneously includes a third guide rail 221, a pivot shaft 222, a main connection shaft 223, a first connection arm 224, and a second connection arm 225. When it is necessary to adjust the positions of the first evaporation source 31 and the second evaporation source 32, by rotationally driving the main connection shaft 223 with the pivot shaft 222 as the rotation center, the main connection shaft 223 rotates to move the first connection arm 224 and the second connection arm 225, and further the first evaporation source 31 and the second evaporation source 32 can be moved.

[0064] When the angle at which the main connection shaft 223 rotates about the pivot shaft 222 as the rotation center is 180° or less, the first evaporation source 31 can move along the second direction Y to the first vapor deposition region 11 or the second vapor deposition region 12 with respect to the edge guide part 21 and one third guide rail 221. At the same time, the second evaporation source 32 can move along the second direction Y to the first vapor deposition region 11 or the second vapor deposition region 12 with respect to the edge guide part 21 and the other third guide rail 221.

[0065] When the angle at which the main connection shaft 223 rotates about the pivot shaft 222 exceeds 180°, the first evaporation source 31 and the second evaporation source 32 can be moved along the first direction X with respect to the edge guide part 21 to the first deposition region 11 and the second deposition region 12. Similarly, the position adjustment requirements of the first evaporation source 31 and the second evaporation source 32 can be satisfied.

[0066] As shown in FIG. 6, as an alternative embodiment, the deposition apparatus 100 according to the embodiment of the present application further includes a first placement plate 40 and a second placement plate 50 for placing the substrate to be deposited. The first placement plate 40 is provided in the first deposition region 11, and the second placement plate 50 is provided in the second deposition region 12.

[0067] Optionally, the shapes of the first placement plate 40 and the second placement plate 50 may be the same, and in the first direction X, the first placement plate 40 and the second placement plate 50 may be installed opposite to each other.

[0068] Optionally, both the first placement plate 40 and the second placement plate 50 are used for placing the substrate to be deposited. When the deposition apparatus 100 operates, the first placement plate 40 may be used for placing the first substrate to be deposited, and the second placement plate 50 may be used for placing the second substrate to be deposited.

[0069] Optionally, the surfaces of the first placement plate 40 and the second placement plate 50 facing the evaporation source assembly 30 may be flush.

[0070] By providing the first placement plate 40 and the second placement plate 50, the deposition apparatus 100 according to the embodiment of the present application can realize placing at least two substrates to be deposited synchronously, can guarantee the flatness of the substrate to be deposited, and can realize the positioning of the substrate to be deposited according to the positions of the first placement plate 40 and the second placement plate 50, thereby guaranteeing the deposition effect.

[0071] As an optional embodiment, the vapor deposition apparatus 100 according to the embodiments of the present application is provided on the substrate 10 and further includes a partition plate (not shown) that at least partially partitions the first vapor deposition region 11 and the second vapor deposition region 12.

[0072] Optionally, an avoidance space is provided on the partition plate to avoid the movement of the first evaporation source 31 and the second evaporation source 32 in the first direction X and the second direction Y.

[0073] By providing a partition plate, the vapor deposition apparatus 100 according to the embodiments of the present application can block to a certain extent the materials discharged from the first evaporation source 31 and the second evaporation source 32, reduce the crosstalk between the two, and guarantee the performance of the formed film layer.

[0074] As an optional embodiment, the vapor deposition apparatus 100 according to the embodiments of the present application further includes a collector configured to collect temperature information in the vapor deposition chamber, and a controller configured to determine the tension compensation amount of the mask plate based on the difference value between the temperature information and a preset temperature threshold.

[0075] Optionally, the collector may include a temperature sensor.

[0076] Optionally, there may be a mapping table between the difference value between the temperature information and the preset temperature threshold and the tension compensation amount. The corresponding tension compensation amount may be retrieved and obtained according to the difference value between the temperature information and the preset temperature threshold, and then the mask plate may be tensioned. The adoption of a mapping table between the difference value between the temperature information and the preset temperature threshold and the tension compensation amount has industry standards formed in the field of vapor deposition, especially in the field of panel vapor deposition, and is relatively general-purpose, so it will not be further described in this application.

[0077] Since two evaporation regions and two evaporation sources are installed simultaneously in one evaporation chamber, the temperature in the evaporation chamber becomes too high. After the temperature rises, if the mask plate is stretched according to the stretching regulations when the temperature has not risen, the stretching accuracy of the mask plate will be reduced. In the evaporation apparatus 100 according to an embodiment of the present application, by providing a collector, the temperature information of the first evaporation region 11 and the second evaporation region 12 in the evaporation chamber can be collected. Since the stretching requirements for the mask plate are different at different temperatures, based on the difference value between the temperature information and the preset temperature, by determining the stretching compensation amount of the mask plate, the stretching accuracy is guaranteed, the influence of the stretching accuracy caused by the temperature rise is avoided, and the evaporation effect is optimized.

[0078] As shown in FIG. 7, on the one hand, an embodiment of the present application further provides an evaporation system including the evaporation apparatus 100 according to each of the above embodiments.

[0079] Optionally, the number of evaporation apparatuses 100 included in the evaporation system may be two, three or more. Specifically, it may be determined according to the number of film layers required on the evaporation substrate. Taking the evaporation of an OLED device as an example, if it is set that 12 film layers need to be evaporated and formed on the OLED device, the evaporation system includes six evaporation apparatuses 100, with two evaporation apparatuses 100 as a group and distributed along the second direction Y. The three groups of evaporation apparatuses 100 are distributed along the first direction X. The two evaporation apparatuses 100 in the same group are communicated through one transfer chamber 200, and a transition chamber 300 is connected between the transfer chambers 200 of two adjacent groups of evaporation apparatuses 100.

[0080] For better understanding, hereinafter, it will be described by taking as an example that the six evaporation apparatuses 100 are respectively the first evaporation apparatus 110, the second evaporation apparatus 120, the third evaporation apparatus 130, the fourth evaporation apparatus 140, the fifth evaporation apparatus 150 and the sixth evaporation apparatus 160.

[0081] Place two substrates to be vapor-deposited, i.e., a first substrate and a second substrate, on the first vapor deposition apparatus 110. In the first vapor deposition apparatus 110, by controlling the movement of the first evaporation source 31, form a first film layer on each of the first substrate and the second substrate, and by controlling the movement of the second evaporation source 32, form a second film layer on each of the first film layers formed on the first substrate and the second substrate.

[0082] The first substrate and the second substrate on which the first film layer and the second film layer are formed sequentially pass through the transfer chamber 200 and are transferred to the second vapor deposition apparatus 120. By the second vapor deposition apparatus 120, a third film layer and a fourth film layer are respectively formed on the second film layers of the first substrate and the second substrate. The first substrate and the second substrate on which four film layers are formed pass through the transition chamber 300 between the two sets of vapor deposition apparatuses 100 and are transferred to the third vapor deposition apparatus 130, on which a fifth film layer and a sixth film layer are formed. In this order, until the eleventh film layer and the twelfth film layer are formed in the sixth vapor deposition apparatus 160, the vapor deposition requirements of the OLED device are completed.

[0083] The vapor deposition system according to the embodiment of the present application includes the vapor deposition apparatus 100 according to each of the above embodiments. Therefore, with the same vapor deposition apparatus 100, two different film layers can be vapor-deposited on each of two different substrates. When vapor-depositing and forming an OLED device, only six vapor deposition apparatuses 100 can complete the vapor deposition of twelve film layers, which not only makes the entire vapor deposition system inexpensive, reduces the number of vapor deposition apparatuses 100, and reduces the occupied space to nearly half of the original, but also can complete the vapor deposition of two different substrates at one time, and improves the utilization rate of the production capacity of the vapor deposition apparatus 100 and the vapor deposition system to which it is applied.

[0084] As shown in FIGS. 8 to 14, according to another aspect, the embodiment of the present application provides the vapor deposition apparatus 100 of each of the above embodiments, and a providing step S100 of positioning the first evaporation source 31 in the first vapor deposition region 11 and positioning the second evaporation source 32 in the second vapor deposition region 12. A placing step S200 of placing a first substrate to be vapor-deposited on a first vapor-deposition region 11 and placing a second substrate to be vapor-deposited on a second vapor-deposition region 12; A vapor-deposition step S300 of controlling to move a first evaporation source 31 relative to a guiding member 20 to sequentially form a first vapor-deposited layer on the first substrate and the second substrate, and move a second evaporation source 32 relative to the guiding member 20 to sequentially form a second vapor-deposited layer on the first vapor-deposited layer of the first substrate and the first vapor-deposited layer of the second substrate; Further provided is a vapor-deposition method including the above steps.

[0085] Optionally, in step S100, the provided vapor-deposition apparatus 100 may be one, or of course, may be two or more. Optionally, the first evaporation source 31 and the second evaporation source 32 in the same vapor-deposition apparatus 100 may be located on the same side of the guiding member 20 in the second direction Y, or of course, may be located on different sides of the guiding member 20, and both may be arranged along a diagonal direction.

[0086] Optionally, in step S200, when the vapor-deposition apparatus 100 includes a first placing plate 40 and a second placing plate 50, the first substrate to be vapor-deposited can be placed on the first placing plate 40, and the second substrate to be vapor-deposited can be placed on the second placing plate 50.

[0087] Optionally, in step S300, control is performed to move the first evaporation source 31 relative to the guiding member 20 along the second direction Y to form a first vapor-deposited layer on the first substrate, then control is performed to move the first evaporation source 31 to the second vapor-deposition region 12, control is performed to move the second evaporation source 32 to the first vapor-deposition region 11, then control is performed to move the first evaporation source 31 relative to the guiding member 20 along the second direction Y to form a first vapor-deposited layer on the second substrate, control is performed to move the second evaporation source 32 relative to the guiding member 20 along the second direction Y to form a second vapor-deposited layer on the first vapor-deposited layer of the first substrate, and further, a second vapor-deposited layer is formed on the first vapor-deposited layer of the second substrate by the second evaporation source 32.

[0088] In the vapor deposition method according to the embodiment of the present application, by using the vapor deposition apparatus 100 according to the above embodiment, two different film layers can be vapor-deposited on each of two different substrates by the same vapor deposition apparatus 100, and the vapor deposition efficiency and the utilization rate of the production capacity are high.

[0089] As an alternative embodiment, in the vapor deposition method according to the embodiment of the present application, the vapor deposition step includes: As shown in FIGS. 9 and 10, a preliminary vapor deposition step of controlling the first evaporation source 31 so that a first vapor deposition layer is vapor-deposited on the first substrate; As shown in FIG. 11, a first position adjustment step of controlling the first evaporation source 31 to enter the second vapor deposition region 12 and the second evaporation source 32 to enter the first vapor deposition region 11; As shown in FIG. 12, a secondary vapor deposition step of controlling the first evaporation source 31 so that a first vapor deposition layer is vapor-deposited on the second substrate and the second evaporation source 32 so that a second vapor deposition layer is vapor-deposited on the first vapor deposition layer formed on the first substrate; A first feed step of carrying out the first substrate on which the first vapor deposition layer and the second vapor deposition layer are formed and carrying in the first substrate to be vapor-deposited next; As shown in FIG. 13, a second position adjustment step of controlling the first evaporation source 31 to enter the first vapor deposition region 11 and the second evaporation source 32 to enter the second vapor deposition region 12; As shown in FIG. 14, a re-vapor deposition step of controlling the first evaporation source 31 so that a first vapor deposition layer is vapor-deposited on the first substrate to be newly vapor-deposited and the second evaporation source 32 so that a second vapor deposition layer is vapor-deposited on the first vapor deposition layer formed on the second substrate; And a second feed step of carrying out the second substrate on which the first vapor deposition layer and the second vapor deposition layer are formed and carrying in the second substrate to be vapor-deposited next.

[0090] The first position adjustment step, the secondary vapor deposition step, the first feed step, the second position adjustment step, the re-vapor deposition step and the second feed step are repeatedly executed by the same vapor deposition apparatus 100 so as to form the first vapor deposition layer and the second vapor deposition layer on any of a plurality of first substrates and second substrates to be vapor-deposited.

[0091] Optionally, in the preliminary vapor deposition step, the first evaporation source 31 is moved along the second direction Y, and the first substrate is scanned and controlled to vapor-deposit a first vapor deposition layer on the first substrate.

[0092] Optionally, in the first position adjustment step, the first evaporation source 31 and the second evaporation source 32 may be controlled to move in opposite directions along the first direction X so that the first evaporation source 31 enters the second vapor deposition region 12 and the second evaporation source 32 enters the first vapor deposition region 11. The first evaporation source 31 and the second evaporation source 32 may be synchronously controlled to move and enter the corresponding vapor deposition regions. Of course, the first evaporation source 31 and the second evaporation source 32 may be step-controlled to move and enter the corresponding vapor deposition regions. Optionally, it is synchronous control.

[0093] Optionally, in the secondary vapor deposition step, in order to form a first vapor deposition layer on the second substrate by the first evaporation source 31 and form a second vapor deposition layer on the first substrate by the second evaporation source 32, the first evaporation source 31 and the second evaporation source 32 may be controlled to move along the second direction Y relative to the guide member 20, respectively. The first evaporation source 31 may be synchronously controlled so that a first vapor deposition layer is vapor-deposited on the second substrate, and the second evaporation source 32 is synchronously controlled so that a second vapor deposition layer is vapor-deposited on the first vapor deposition layer formed on the first substrate. Of course, the first evaporation source 31 may be step-controlled so that a first vapor deposition layer is vapor-deposited on the second substrate, and the second evaporation source 32 may be step-controlled so that a second vapor deposition layer is vapor-deposited on the first vapor deposition layer formed on the first substrate. Optionally, it is synchronous control.

[0094] Optionally, the properties and functions of the materials ejected from the first evaporation source 31 and the second evaporation source 32 in the same vapor deposition apparatus 100 are similar, and there is no fear of contamination.

[0095] Optionally, in the first feed step, the first substrate on which the first and second vapor deposition layers have been deposited and carried out enters the next vapor deposition apparatus 100, and the third and fourth vapor deposition layers and the like can be vapor deposited thereon. The next first substrate to be vapor deposited may be arranged to face the second substrate on which the first vapor deposition layer has been formed in the first direction X. Optionally, the unloading of the first substrate on which the first and second vapor deposition layers have been vapor deposited and the loading of the next first substrate to be vapor deposited may be performed synchronously. Of course, the first substrate on which the first and second vapor deposition layers have been vapor deposited may be unloaded first, and then the next first substrate to be vapor deposited may be loaded.

[0096] Optionally, in the second position adjustment step, the first evaporation source 31 and the second evaporation source 32 can be controlled to move in the reverse direction along the first direction X so that the first evaporation source 31 returns to the first vapor deposition region 11 and the second evaporation source 32 returns to the second vapor deposition region 12. The entry of the first evaporation source 31 into the first vapor deposition region 11 and the entry of the second evaporation source 32 into the second vapor deposition region 12 can be synchronously controlled. Of course, the entry of the first evaporation source 31 into the first vapor deposition region 11 and the entry of the second evaporation source 32 into the second vapor deposition region 12 can be step-controlled, and optionally, it is synchronous control.

[0097] Optionally, in the re-evaporation step, the first evaporation source 31 and the second evaporation source 32 are respectively controlled to move along the second direction Y with respect to the guide member 20, and a first evaporation layer is formed by evaporation on the first substrate to be newly deposited by the first evaporation source 31, and a second evaporation layer is formed by evaporation on the first evaporation layer formed on the second substrate by the second evaporation source 32. The first evaporation source 31 may be synchronously controlled such that a first evaporation layer is formed by evaporation on the first substrate to be newly deposited, and the second evaporation source 32 is synchronously controlled such that a second evaporation layer is formed by evaporation on the first evaporation layer formed on the second substrate. Of course, the first evaporation source 31 is step-controlled such that a first evaporation layer is formed on the first substrate to be newly deposited, and the second evaporation source 32 is step-controlled such that a second evaporation layer is formed by evaporation on the first evaporation layer formed on the second substrate, and optionally, it is synchronous control.

[0098] Optionally, in the second feeding step, the second substrate on which the first evaporation layer and the second evaporation layer have been formed and carried out enters the next evaporation apparatus 100, and a third evaporation layer, a fourth evaporation layer, etc. can be formed by evaporation. The second substrate to be newly deposited and carried in may be arranged to face the first substrate on which the first evaporation layer has been formed in the first direction X. The carrying out of the second substrate on which the first evaporation layer and the second evaporation layer have been formed and the carrying in of the second substrate to be newly deposited may be performed synchronously. Of course, the second substrate on which the first evaporation layer and the second evaporation layer have been formed may be carried out first, and then the second substrate to be newly deposited may be carried in.

[0099] Optionally, until the first evaporation layer and the second evaporation layer are formed on all the first substrates and the second substrates to be evaporated, the first position adjustment step, the secondary evaporation step, the first feeding step, the second position adjustment step, the re-evaporation step, and the second feeding step may be repeated.

[0100] In the vapor deposition method according to the embodiment of the present application, the vapor deposition step adopts the above working procedure, which is advantageous for vapor depositing two different film layers on each of two different substrates by the same vapor deposition apparatus 100. For the 10-layer film, it saves 5 times of alignment and separation processes. Assuming that one sheet requires 240S, it can be predicted that it will be shortened to 180S, the utilization rate of production capacity is improved by 25%, and the vapor deposition efficiency and the utilization rate of production capacity are higher.

[0101] As described above, the present application has been described with reference to the preferred embodiments. However, various improvements can be made and the members therein can be replaced with equivalents without departing from the scope of the present application. In particular, as long as there is no configuration conflict, each technical feature mentioned in each embodiment can be combined in any manner. The present application is not limited to the specific embodiments disclosed in this specification, but includes all technical solutions falling within the scope of the claims.

Claims

1. A substrate having a deposition chamber including a first deposition region and a second deposition region that are continuously distributed along a first direction, A guiding member positioned in the first deposition region and the second deposition region, An evaporation source assembly provided on the guiding member, the evaporation source assembly being movably connected to the guiding member respectively, being capable of reciprocating between the first deposition region and the second deposition region, and being capable of reciprocating relative to the guiding member along a second direction intersecting the first direction, the evaporation source assembly including a first evaporation source and a second evaporation source, comprising a deposition apparatus.

2. The evaporation source assembly and the guiding member are switchable between a first state and a second state, In the first state, the first evaporation source is positioned in the first deposition region and the second evaporation source is positioned in the second deposition region, In the second state, the first evaporation source is moved to the second deposition region and the second evaporation source is moved to the first deposition region, The deposition apparatus according to Claim 1.

3. The first evaporation source and the second evaporation source are movable synchronously relative to the guiding member, The deposition apparatus according to Claim 2.

4. The guiding member includes a closed ring-shaped edge guide positioned in the first deposition region and the second deposition region, and a central guide positioned in a ring-shaped chamber surrounded by the edge guide, The first evaporation source is connected to the edge guide and the central guide and is movable at least along the edge guide, and the second evaporation source is connected to the edge guide and the central guide and is movable at least along the edge guide, The deposition apparatus according to Claim 1.

5. The edge guide is a polygonal ring-shaped track, The deposition apparatus according to Claim 4.

6. The edge guide includes a first guide rail provided in pairs distributed along the first direction and extending along the second direction, and a second guide rail provided in pairs distributed along the second direction and extending along the first direction, the first guide rail and the second guide rail being provided alternately and having their start ends and end ends connected to each other, The deposition apparatus according to Claim 5.

7. The first guide rail provided to be paired and the second guide rail provided to be paired form a rectangular frame-shaped guide rail. The vapor deposition apparatus according to claim 6.

8. The central guide part includes two or more third guide rails distributed along the first direction and each extending along the second direction and connected to the edge guide part. The first evaporation source is movably connected to at least one of the third guide rails, and the second evaporation source is movably connected to at least one of the third guide rails. The vapor deposition apparatus according to claim 6.

9. One end of the third guide rail in the second direction is connected to one of the second guide rails provided to be paired, and the other end of the third guide rail in the second direction is connected to the other of the second guide rails provided to be paired. The vapor deposition apparatus according to claim 8.

10. The third guide rails are provided in parallel at intervals in the first direction with respect to each of the first guide rails. The vapor deposition apparatus according to claim 8.

11. The central guide part includes a pivot shaft, a main connection shaft, a first connection arm, and a second connection arm. The main connection shaft is rotatably connected to the pivot shaft and is rotatable about the pivot shaft. One end of the main connection shaft is rotatably connected to the first connection arm and the other end is rotatably connected to the second connection arm. The first evaporation source is provided on the first connection arm and is slidably connected to the edge guide part. The second evaporation source is provided on the second connection arm and is slidably connected to the edge guide part. The vapor deposition apparatus according to claim 4.

12. The main connection shaft is rotatably connected to the pivot shaft at the central position in its longitudinal direction. The vapor deposition apparatus according to claim 11.

13. One end of the first evaporation source is slidably fitted to the edge guide part, and the other end is fixedly connected to one end of the first connection arm away from the main connection shaft. One end of the second evaporation source is slidably fitted to the edge guide part, and the other end is fixedly connected to one end of the second connection arm away from the main connection shaft. The vapor deposition apparatus according to claim 11.

14. The central guide part includes two or more third guide rails that are distributed along the first direction, each extending along the second direction and connected to the edge guide part, a pivot shaft located between two adjacent third guide rails, a main connection shaft that is rotatably connected to the pivot shaft, is rotatable about the pivot shaft as a rotation center, has one end rotatably connected to a first connection arm and the other end rotatably connected to a second connection arm, the first connection arm, and the second connection arm. The first evaporation source is provided on the first connection arm and is slidably connected to the edge guide part and one of the third guide rails. The second evaporation source is provided on the second connection arm and is slidably connected to the edge guide part and the other third guide rail. The vapor deposition apparatus according to claim 4.

15. The vapor deposition apparatus further includes a first placement plate and a second placement plate for placing a substrate to be vapor-deposited. The first placement plate is provided in the first vapor deposition area, and the second placement plate is provided in the second vapor deposition area. The vapor deposition apparatus according to claim 1.

16. The vapor deposition apparatus is provided on the base body and further includes a partition plate that at least partially partitions the first vapor deposition area and the second vapor deposition area. The vapor deposition apparatus according to claim 1.

17. The vapor deposition apparatus further includes a collector arranged to collect temperature information in the vapor deposition chamber, and a controller configured to determine the tension compensation amount of the mask plate based on the difference value between the temperature information and a preset temperature threshold value. The vapor deposition apparatus according to claim 1.

18. A vapor deposition system including the vapor deposition apparatus according to any one of claims 1 to 17. Vapor deposition system.

19. A providing step of providing the vapor deposition apparatus according to claim 1, positioning the first evaporation source in the first vapor deposition area and the second evaporation source in the second vapor deposition area; A placing step of placing a first substrate to be vapor-deposited in the first vapor deposition area and a second substrate to be vapor-deposited in the second vapor deposition area; A vapor deposition step of moving the first evaporation source relative to the guide member to sequentially vapor-deposit a first vapor deposition layer on the first substrate and the second substrate, and controlling to sequentially form a second vapor deposition layer on the first vapor deposition layer of the first substrate and the first vapor deposition layer of the second substrate by moving the second evaporation source relative to the guide member. Evaporation method.

20. The evaporation step includes: A preliminary evaporation step of controlling the first evaporation source so that a first evaporation layer is formed by evaporation on the first substrate; A first position adjustment step of controlling the first evaporation source to enter the second evaporation region and the second evaporation source to enter the first evaporation region; A secondary evaporation step of controlling the first evaporation source so that a first evaporation layer is formed by evaporation on the second substrate and the second evaporation source so that a second evaporation layer is formed by evaporation on the first evaporation layer formed on the first substrate; A first feed step of carrying out the first substrate on which the first evaporation layer and the second evaporation layer are formed and carrying in the next first substrate to be evaporated; A second position adjustment step of controlling the first evaporation source to enter the first evaporation region and the second evaporation source to enter the second evaporation region; A re-evaporation step of controlling the first evaporation source so that a first evaporation layer is formed by evaporation on the newly loaded first substrate to be evaporated and the second evaporation source so that a second evaporation layer is formed by evaporation on the first evaporation layer formed on the second substrate; A second feed step of carrying out the second substrate on which the first evaporation layer and the second evaporation layer are formed and carrying in the next second substrate to be evaporated; and the first position adjustment step, the secondary evaporation step, the first feed step, the second position adjustment step, the re-evaporation step, and the second feed step are repeatedly executed by the same evaporation apparatus so as to form a first evaporation layer and a second evaporation layer on any of the plurality of first substrates and second substrates to be evaporated. The evaporation method according to claim 19.

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