Mirror for projection exposure apparatus

Abstract

The mirror for a projection exposure apparatus has a spectral filter for the light reflected by the mirror, embodied as a grating structure (30). The grating structure (30) has at least two grating levels, and as a result, defines at least two optical path lengths for the reflected light. All the frank portions (35) of the grating structure (30) are in each case arranged between the grating level structure portions (33, 34) of the grating structure (30) that define adjacent grating levels respectively. The lower limit spatial wavelength over the defect-free partial frank portions of all the frank portions (35), which occupy at least 90% of the range of all the frank portions (35), is in the range of 0.01 μm to 1 μm, excluding the values at both ends. The upper limit spatial wavelength over the defect-free partial frank portions of all the frank portions (35) is in the range of 0.1 μm to 100 μm, excluding the values at both ends. The effective roughness of the defect-free partial frank portions that are greater than the lower limit spatial wavelength and less than the upper limit spatial wavelength is less than 10 nm. A protective layer is disposed on the grating structure (30). As a result, a mirror with an improved service life is obtained.

Description

Technical Field

[0001] This patent application claims the priority of German Patent Application No. 10 2022 207 052.6, the content of which is incorporated herein by reference.

[0002] The present invention relates to a mirror for a projection exposure apparatus. Furthermore, the present invention relates to an illumination optical unit having such a mirror, to an optical system having such an illumination optical unit, to an illumination system having such an illumination optical unit, to a projection exposure apparatus having such an optical system, to a method for manufacturing a microstructured component or a nanostructured component, and to a component manufactured by this method.

Background Art

[0003] Mirrors of the type described at the beginning are known from German Patent Application Publication No. 10 2018 220 629 A1, International Application No. 2017 / 207 401 A1, and German Patent Application Publication No. 10 2012 010 093 A1. German Patent Application Publication No. 10 2018 202 629 A1 discloses a mirror for an illumination optical system of a projection exposure apparatus having a spectral filter embodied as a grating structure. German Patent Application Publication No. 10 2010 030 913 A1 discloses a method for manufacturing a substrate for an EUV mirror having a given surface morphology at the use temperature.

Summary of the Invention

[0004] An object of the present invention is to develop a mirror of the type described at the beginning so that its service life is improved.

[0005] According to the present invention, this object is achieved by a mirror having the features defined in claim 1.

[0006] According to the present invention, it has been recognized that the effective roughness of the fringe portion of the grating structure used for spectroscopic filtering purposes on the mirror affects the durability of the protective layer on the grating structure. Care must be taken to ensure that the effective roughness of the fringe portion is small, particularly exceeding the spatial wavelength in the range of 0.01 μm to 1 μm excluding the values at both ends, so as to ensure the improvement of the durability of the protective layer. It has been found that the smoothness of the defect-free partial fringe portion and the corresponding smoothness of the protective layer that can subsequently be applied thereto have a positive effect on the durability of the protective layer and thus on the service life of the mirror. In this case, if the roughness specifications are guaranteed within the defect-free partial fringe portion, the influence of the structure over a certain range of the entire fringe portion and the greater roughness are acceptable. The lower limit spatial wavelength is such that when exceeding this, the roughness specifications will be satisfied, and depending on the embodiment of the grating structure, it can be within the range of 0.01 μm to 0.2 μm excluding the values at both ends. The upper limit spatial wavelength is such that when below this, the roughness specifications will be satisfied, and it can be within the range of 0.1 μm to 10 μm excluding the values at both ends.

[0007] For the definitions of the parameters "limiting spatial wavelength" and "effective roughness", refer to International Application No. 2017 / 207401 A1.

[0008] The mirror can be an EUV collector.

[0009] The mirror can be a component of the light source collector module, a component of the illumination optical unit, or alternatively a component of the projection optical unit of the illumination device.

[0010] The more stringent roughness requirements described in claim 2 lead to a further extension of the service life of the mirror. The effective roughness exceeding the lower limit spatial wavelength can be less than 1 nm and can also be less than 0.3 nm.

[0011] As long as the defect-free partial flange portion according to claim 3 contains more than 95% of the total flange portion, the adhesion of the substrate is correspondingly improved, and in this way, the service life of the mirror is further improved. It is possible for the entire flange portion to fully meet the specified roughness requirements, and in this case, as a result, the defect-free partial flange portion coincides with the entire flange portion.

[0012] The gradient variation specification according to claim 4 leads to a further roughness characteristic evaluation, whereby a design of the flange portion of the lattice structure that extends the service life is obtained. The maximum gradient variation can be 150° / μm or less, 100° / μm or less, 50° / μm or less, or otherwise 25° / μm or less, for example 20° / μm.

[0013] By specifying the limit value of the second derivative of the defect structure for at least one spatial coordinate, a further roughness specification can arise.

[0014] The manufacturing method of the defect-free partial flange portion according to claim 5 results in an effective smoothing of this partial flange portion, thus leading to the satisfaction of the roughness specification. As the smoothing method, chemical and / or physical processes, local and / or overall laser ablation, polishing methods, or otherwise, in particular additive methods based on coating can be used.

[0015] The advantages of the illumination optical unit optically described in claim 6, the optical system described in claim 7, the illumination system described in claim 8, the projection exposure apparatus described in claim 9, the manufacturing method described in claim 10, and the microstructured component or element or nanostructured component or element described in claim 11 coincide with the advantages already considered above with reference to the mirror.

[0016] In particular, a semiconductor component, such as a memory chip, can be manufactured using the projection exposure apparatus.

[0017] Further advantages, features, and details of the present invention are apparent from the description of a plurality of exemplary embodiments with reference to the drawings.

Brief Description of the Drawings

[0018]

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Mode for Carrying Out the Invention

[0019] First, the overall structure of the microlithography projection exposure apparatus 1 will be described.

[0020] FIG. 1 schematically shows a meridional cross-section of the microlithography projection exposure apparatus 1. The illumination system 2 of the projection exposure apparatus 1 has, in addition to the radiation source 3 or light source 3, an illumination optical unit 4 for exposing the object field 5 in the object plane 6. In this case, a reticle (not shown in the drawing) disposed in the object field 5 and held by a reticle holder (not shown in the drawing) is exposed. The projection optical unit 7 serves to image the object field 5 into the image field 8 in the image plane 9. The structure on the reticle is imaged onto the photosensitive layer of a wafer (not shown in the drawing) disposed in the region of the image field 8 in the image plane 9 and held by a wafer holder (not shown in the drawing in the same way).

[0021] The radiation source 3 is an EUV radiation source where the emitted and used radiation is in the range between 5 nm and 30 nm. This can be a plasma source, such as a GDPP (gas discharge produced plasma) source or an LPP (laser produced plasma) source. As an example, a carbon dioxide laser operating at a wavelength of 10.6 μm, i.e., within the infrared range, can be used to excite tin to form a plasma. A synchrotron-based radiation source can also be used as the radiation source 3. A person skilled in the art can find information related to such radiation sources, for example, in U.S. Patent No. 6,859,515 B2. The EUV radiation 10 emitted from the radiation source 3 is converged by the collector 11. The corresponding collector is known from European Patent Application No. 1 225 481 A. Downstream of the collector 11, the EUV radiation 10 propagates through the intermediate focal plane 12 and then enters the field facet mirror 13 having a plurality of field facets 13a. The field facet mirror 13 is arranged in the plane of the illumination optical unit 4 that is optically conjugate to the object plane 6.

[0022] The EUV radiation 10 is hereinafter also referred to as illumination light or imaging light.

[0023] Downstream of the field facet mirror 13, the EUV radiation 10 is reflected by the pupil facet mirror 14 having a plurality of pupil facets 14a. The pupil facet mirror 14 is arranged in the pupil plane of the illumination optical unit 4 that is optically conjugate to the pupil plane of the projection optical unit 7. Using the pupil facet mirror 14 and an imaging optical assembly in the form of a transfer optical unit 15 having mirrors 16, 17, and 18 specified in the order of the beam path, the individual field facets 13a of the field facet mirror 13 are imaged into the object field 5. These are also called partial fields or individual mirror groups and will be described in more detail below. The last mirror 18 of the transfer optical unit 15 is a grazing incidence mirror.

[0024] FIG. 2 schematically shows, by way of example, a part of the reflecting surface of mirror 29 having a spectroscopic filter in the form of a grating structure 30. Mirror 29 can be a collector, a mirror of the illumination optical unit 4, and / or a mirror of the projection optical unit 7.

[0025] The grating structure 30 serves as a spectroscopic filter for masking and eliminating radiation having wavelengths within a predetermined range by diffraction, in particular for masking and eliminating wavelengths within the infrared range. The masked radiation having a wavelength different from the wavelength of the light used reflected by mirror 29 is also called stray light.

[0026] The grating structure 30 has two grating levels, namely a lower grating level 31 and an upper grating level 32. With respect to the incident illumination light or imaging light 10 E the grating structure 30 defines two optical path lengths by means of these two grating levels 31, 32 with respect to the respective reflected illumination light or imaging light 10 R respectively. Depending on the embodiment of the grating structure 30, the grating structure 30 may have three or more grating levels, and as a result, in particular, it is also possible to define three or more different optical path lengths with respect to the respective reflected illumination light or imaging light 10R.

[0027] The lower grating level 31 is defined by a lower grating level structure portion 33 of the grating 30 flush therewith. The upper grating level 32 is defined by an upper grating level structure portion 34 of the grating structure 30.

[0028] The entire fringe portion 35 of the grating structure 30 is in any case arranged between the grating level structure portions 33, 34 or 34, 33 defining the adjacent grating levels 31, 32 or 32, 31 respectively. Between the entire fringe portion 35 and the lower grating level 31, there is a minimum fringe angle b which is less than 90° and is usually between 5° and 80°, for example in the range of 10° to 70° excluding the end values, or otherwise in the range of 30° to 60° excluding the end values.

[0029] FIG. 3 shows a deformed form of the grating structure 30 in which the frank angle b of the entire frank portion 35 with respect to the lower grating level 31 is smaller than in the case of the embodiment according to FIG. 2.

[0030] Since the frank angle b is not 90°, the grating structure 30 in each case has a trapezoidal cross-section in particular. The cross-section may correspond to an isosceles trapezoid. This is in particular non-rectangular.

[0031] The percentage of the area of the entire reflective surface area of the mirror 29, in particular the entire area of the grating structure 30 formed by the entire frank portion 35, in plan view is 10% or less, in particular 5% or less, in particular 3% or less, in particular 2% or less, in particular 1% or less, in particular 0.5% or less, in particular 0.3% or less, particularly in the case of a perpendicular projection. These area relationships apply in particular to the projection along the normal of the entire reflective surface of the mirror 29.

[0032] Instead of a trapezoidal cross-section, the grating structure 30 may generally also have a cross-section having a minimum envelope of a trapezoidal shape. The upper and lower grating level structure portions 34, 33 do not necessarily extend parallel to each other.

[0033] The level difference d between the lower grating level 31 and the upper grating level 32 can be on the order of a quarter wavelength in the infrared region. This level difference d is in particular in the range from 1 micrometer to 10 micrometers. Other values are likewise possible.

[0034] The level difference d is also referred to as the groove depth of the grating structure 30. For further details, see DE 10 2012 010 093 A1.

[0035] The grating structure 30 carries a protective layer 36. The frank angle b less than 90° makes it possible to close the protective layer 36, in particular to completely cover the substrate 37 without gaps. Furthermore, this ensures a desired service life and, in particular, good and permanent adhesion of the protective layer 36 on the grating structure 30, particularly in the region of the entire frank portion 35.

[0036] The perspective view according to FIG. 4 shows again the structure of the uncoated grating structure 30, which includes a lower grating level structure portion 33, an upper grating level structure portion 34, and an intervening all-flank portion 35. The enlarged excerpt V of FIG. 4 according to FIG. 5 shows the fine unevenness 37 of the all-flank portion 35.

[0037] FIGS. 4 and 5 show the uncoated grating structure 30, that is, the grating structure 30 before the application of the protective layer 36.

[0038] The fine unevenness 37 can be described as a surface structure distribution depending on the spatial wavelength P. The critical spatial wavelength P G Surface structures having a spatial wavelength less than are significantly reduced as a result of appropriate surface treatment, in particular smoothing or polishing, so that the critical spatial wavelength P G The effective roughness rms of the spatial wavelength P less than G Satisfies the following: (4π rmsG cos(θ) / λ) 2 <0.1 In the above formula, λ is the EUV wavelength used. In the above formula, θ is the incident angle of the EUV light 3 on the mirror surface of the mirror 29.

[0039] In addition to the incident angle θ, the relationship of the effective roughness rms G Depends only on the wavelength λ of the light used. When λ = 13.5 nm and θ = 0, the following holds: rms G ≦0.35 nm.

[0040] The effective roughness rms is obtained as the integral of the range between two different critical spatial wavelengths. The lower limit spatial wavelength P G Exceeding and optionally the upper limit spatial wavelength P G’ Less than, that is, between the lower limit spatial wavelength and the upper limit spatial wavelength, the effective roughness rms of the mirror surface GG’ Is at least 1.5 times larger but not more than 6 times larger than less than the lower limit spatial wavelength P G

[0041] The effective roughness rms on the order of 0.5 nm GG’0.5 nm represents the lower limit of this effective roughness, and it can exist within the region near the lower limit spatial wavelength P G The effective roughness rms on the order of 2 nm GG’ 2 nm represents the upper limit of this effective roughness, and it can exist within the region near the upper limit spatial wavelength P G’ nearby.

[0042] The limiting spatial wavelength P G The polishing of the mirror surface at spatial wavelengths less than this can be such that these spatial wavelengths do not substantially contribute to the spectral power density (PSD).

[0043] The spectral power density PSD is specified in units of [nm 4 . Details regarding the definition of the spectral power density can be found in the textbooks "Optical Scattering: Measurement and Analysis" by John C. Stover, 2nd edition in 1995 and 3rd edition in 2012, SPIE, as well as in the article "Power Spectral Density (PSD)" on the internet page of www.nanophys.kth.se that was searchable on January 22, 2016.

[0044] First, the measurement methods for the spectral power density PSD and second, for the effective roughness rms, can be collected from the paper "Surface characterization techniques for determining root-mean-square roughness and power spectral densities of optical components" by Duparre et al., Applied Optics, Vol. 41, No. 1, January 1, 2002. In the section "3. Instruments" of this paper, various items of measurement equipment are considered. In the section "4. Calculation of the Power Spectral Density Function and the rms roughness" of this paper, from the obtained measurement data, first the spectral power density PSD and second, in this paper σrms A method for calculating the effective roughness rms, which is called as such, is defined.

[0045] Each rms value of the effective roughness is obtained from the PSD based on the following relationship:

Equation

[0046]

[0047] In the case of the grating structure 30, the lower limit spatial wavelength P over the defect - free partial fringe portion that occupies at least 90% of the entire fringe portion 35 between adjacent grating level structure portions 33, 34 G is in the range of 0.01 μm to 1 μm excluding the values at both ends. Therefore, a higher lower limit spatial wavelength can be tolerated especially in a region extending over 10% or less of the entire fringe portion 35.

[0048] The effective roughness rms of the defect - free partial fringe portion of the entire fringe portion 35 G is less than 10 nm. Simplifying greatly, this effective roughness can be understood as a deviation from an ideal structure that linearly connects two grating levels 31, 32 between the grating level structure portions 33, 34.

[0049] Using a subtractive smoothing method and / or an additive smoothing method, as will be described below based on FIGS. 6 and 7, a defect - free partial fringe portion of the entire fringe portion 35 can be fabricated.

[0050] ​Exposed defects or convex defects on the full-flank portion 35 are exposed to stronger chemical or physical reactions during an ablation process, such as a chemical and / or physical process or a local or global laser ablation, where it is assumed that the etching rate acts at least substantially isotropically. Thus, as shown by the etching action arrow 38 in FIG. 6, more etching components, i.e., for example, chemical molecules or ions, act on defect A (see FIG. 6). Thus, fewer such etching components act on the comparison site B. For this reason, the material of the mirror substrate of the lattice structure 30 is ablated more in defect A than around defect A, resulting in the smoothing of the exposed defect A. A corresponding explanation also applies to the polishing method as an example of a subtractive smoothing method for the full-flank portion 35. The exposed defect A experiences stronger grinding during polishing than the comparison site B. In this case, the polishing means can act as an additive polishing component.

[0051] In the additive method, the concave defect C (see FIG. 7) is smoothed by coating. The coating particles used can move on the surface of the full-flank portion 35 according to their available energy and preferably accumulate in the concave defect structure caused by defect C. Such a concave defect structure is then filled with coating particles more quickly during the additive smoothing method than the coating of the rest of the surface of the full-flank portion 35 (in this case, see the comparison portion D).

[0052] Using FIGS. 8 to 13, various defect examples on the full-flank portion 35 are examined based on roughness parameters. Each of FIGS. 8 to 13 is subdivided into four figures as a function of the spatial coordinate x and drawn overlapping each other. The top figure shows the defect range y D (x). The figure immediately below shows the profile of the structural coordinate y E (x) of the lattice structure, i.e., in particular of the full-flank portion 35. The figure immediately below that shows the first derivative y E ’(x) of the lattice structure profile. The bottom figure of FIGS. 8 to 13 shows the second derivative y EIndicates “(x)”.

[0053] FIG. 8 shows an ideal case of the entire frank part 35 without defects. This frank part 35 extends between -3 and +3 of the x - coordinate specified in any unit. The first - order derivative y’ varies between 0 in the lattice - level structure parts 33 and 34 and -1 in the region of the entire frank part 35. This corresponds to a frank angle b of 45°.

[0054] For example, the target criterion related to the derivative y’ that can be used to establish the absence of defects in each frank part is that the maximum gradient variation of the defect structure measured in degrees per delta x, which is a path section along the entire frank part 35 with reference to the dimensions of the actual defect structure, is less than 200° / μm. The lower limit can be specified, for example, as 150° / μm, 100° / μm, 75° / μm, 50° / μm, 30° / μm, 25° / μm, or 20° / μm. These values are related to the values of the spatial frequency or spatial wavelength specified above.

[0055] The second - order derivative y” has respectively negative or positive pseudo - singularities in the edge - transition regions at the x - coordinates -3 and 3, on the one hand, between the upper lattice - level structure part 34 and the entire frank part 35, and on the other hand, between the entire frank part 35 and the lower lattice - level structure part 33.

[0056] The conditions defined above for the first - order derivative y’ and / or the second - order derivative y” do not need to exist throughout the entire lattice structure 30. For example, for a partial frank part without defects having at least 90% of the range of the entire frank part 35, it is sufficient that these derivative conditions are satisfied. This range of the partial frank part without defects may also be larger, for example, 95% of the entire frank part 35.

[0057] The following examples of defects are depicted quite exaggeratedly in FIGS. 9ff.

[0058] According to FIG. 9, in the case of a defect example of a "rounded-off particle", which is a convex defect, i.e., a defect protruding more than the remaining part of the Frank part, in any case, there exists a first derivative of an order of magnitude of about 10 in absolute value with respect to the x-coordinate that forms the boundary of the defective particle. By the upper limit value of the absolute value of this first derivative being in the range of 3 to 5, for example, excluding the values at both ends, it is possible to define the smoothing target value of this "rounded-off particle" defect example that must be achieved within the smoothing range such that the x-coordinate range occupied by the original particle defect also belongs to the defect-free partial Frank part.

[0059] Within the edge transition region of the defect example shown in FIG. 9, there exists an absolute value of a very large second derivative that reaches a maximum value of about 1500. In order to specify the target value of a well-functioning smoothing method, an upper limit value of an order of magnitude of about 500 can also be specified for the second derivative. In this case, it can be assumed that the absolute limit value of the concave defect structure is higher than that of the convex defect structure, because it can be assumed that the protective layer 36 adheres better to the concave defect structure than to the convex defect structure.

[0060] Therefore, a higher limit value of an order of magnitude of about 500 can be allowed for the positive values of the second derivative y'', while a lower limit value of an order of magnitude of about 300 can be a candidate for the negative values.

[0061] FIG. 10 shows the corresponding values for a particle example of a "particle with edge cross section contour". In this type of defect, the absolute value of the first derivative becomes relatively small.

[0062] The absolute value of the second derivative y” is also smaller in the case of the defective example of the convex “particle with edge-shaped cross section” according to FIG. 10 than in the example according to FIG. 9. Regarding the target values of the first derivative value y’ and the second derivative value y” defined above, only the direct convex edge region of the defective example according to FIG. 10 deviates from the specification. Therefore, by utilizing a relatively gentle smoothing ablation at this edge region x = 0, the absence of defects can be realized even within the region of this defective structure.

[0063] FIG. 11 shows a defective example of a “scratch”, that is, a concave defect representing a depression in the surrounding flange portion having a substantially triangular cross section in the example according to FIG. 11. In the context of the defective examples according to FIGS. 9 and 10, especially in relation to the defective example according to FIG. 10, what has been described above is also correspondingly applicable here. Especially within the range of the second derivative y”, a higher tolerance limit than that existing in FIGS. 9 and 10 can be set for the concave defect according to FIG. 11. Therefore, the defect according to FIG. 11 is acceptable and optionally does not require smoothing.

[0064] Derivative data with absolute values matching the defective example according to FIG. 9 appears in the defective example of a “channel” according to FIG. 12. In the edge region of the defect according to FIG. 12, the derivatives y’ and y” exhibit large values, but these need to be removed by an appropriate additive smoothing method so that the defect according to FIG. 12 becomes part of a defect-free partial flange portion.

[0065] FIG. 13 is a defective example of “statistical micro-roughness”. Here, in part, excessively large values occur in the derivatives y’ and y”, but these need to be removed by corresponding smoothing methods so that the corresponding-sized portions of the entire flange portion are reprocessed onto a defect-free partial flange portion that achieves the smoothing target value.

[0066] Once the structuring and smoothing of the substrate are complete, a closed protective layer 36 is applied to the grating structure 30. The protective layer 36 can be applied to the mirror substrate and in particular deposited thereon. The protective layer 36 can also be grown on the mirror substrate.

[0067] In particular, a molybdenum-silicon bilayer structure can fulfill the role of the protective layer 36. Details of such layer stacks are known from the prior art.

[0068] To manufacture microstructured components or nanostructured components, in particular semiconductor components, such as microchips, by lithography, the projection exposure apparatus 1 is utilized such that at least one part of the reticle within the object field 5 is imaged onto the region of the photosensitive layer on the wafer within the image field 8. Depending on the embodiment of the projection exposure apparatus 1 as a scanner or a stepper, the reticle and the wafer are moved synchronously in time, continuously in scanner operation, or step by step in stepper operation.

Claims

1. A mirror (29) for a projection exposure apparatus, A spectral filter for the light (10) reflected by the mirror (29), embodied as a lattice structure (30) R ), having The lattice structure (30) defines at least two lattice levels (31, 32), and as a result, defines at least two optical path lengths for the reflected light (10 R ). wherein all the frank portions (35) of the grating structure (30) are in each case arranged between the grating level structure portions (33, 34) of the grating structure (30) that define adjacent grating levels (31, 32), The lower limit spatial wavelength (P) across the defect-free partial frank part of the entire frank part (35), which occupies at least 90% of the range of the entire frank part (35) between the adjacent lattice level structure parts (33, 34) G ) is in the range of 0.01 μm to 1 μm, excluding the values at both ends, The upper limit spatial wavelength (P) over the defect-free partial frank part of the entire frank part (35) G’ is in the range of 0.1 μm to 100 μm, excluding both end values, The lower limit spatial wavelength (P G ), and the effective roughness (rms G’ ) of the defect-free partial Frank part that is less than the upper limit spatial wavelength (P G ) is less than 10 nm, and the mirror (29) has a protective layer (36) on the grating structure (30).

2. The effective roughness (rms G ) of the defect-free partial Frank part exceeding the lower limit spatial wavelength is less than 3 nm, and the mirror according to claim 1 is characterized in that.

3. The mirror according to claim 1 or 2, characterized in that the defect-free partial frank portion has an extent exceeding 95% of the total frank portion (35) between the adjacent grating level structure portions (33, 34).

4. The mirror according to any one of claims 1 to 3, characterized in that the maximum gradient variation measured in the structure of the defect-free partial frank portion is 200° / μm or less.

5. The mirror according to any one of claims 1 to 4, characterized in that the defect-free partial frank portion is manufactured by a subtractive method and / or an additive method.

6. An illumination optical unit (4) for guiding illumination light (10) into an object field of view (5) within an objective surface (6) in which an object to be imaged can be arranged, the illumination optical unit having the mirror according to any one of claims 1 to 5.

7. An optical system having the illumination optical unit according to claim 6, and having a projection optical unit (7) for imaging the object field of view (5) into an image field of view (8).

8. An illumination system having the illumination optical unit according to claim 6 and an EUV light source (3).

9. A projection exposure apparatus (1) having the optical system according to claim 7 and an EUV light source (3).

10. A method for manufacturing a microstructured component or a nanostructured component, the method comprising the following steps: preparing a substrate to which a layer composed of a photosensitive material is at least partially applied; preparing a reticle having a structure to be imaged; preparing the projection exposure apparatus (1) according to claim 9; and projecting at least one portion of the reticle onto the region of the photosensitive layer of the substrate using the projection exposure apparatus (1).

11. A component manufactured by the method according to claim 10. ​ ​

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