Method for installing an EUV collector in an EUV projection exposure system or a component thereof, and EUV collector for carrying out the method

Abstract

To integrate an EUV collector, designed to guide EUV useful light and suppress stray light, into an EUV projection exposure system (1), which includes an EUV light source and illumination optics, a stray light suppression efficiency is first measured over a usable area of ​​the EUV collector. A low-suppression usable area section (43 optA high-impact target area (32) of the target area (42) is identified where the measured stray light suppression efficiency is lower than a given stray light suppression efficiency. Furthermore, a stray light exposure intensity is measured across a target area (42) in the useful light beam path at the location of an arrangement position of the useful area of ​​the EUV collector to be installed. A high-impact target area section (32) of the target area (42) is identified where the measured stray light exposure intensity is greater than a given stray light exposure intensity. The useful area is oriented relative to the target area (42) in an installation orientation in which the low-impact suppression target area section (43) is located. opt ) does not correspond to the high-impact target area section (32). The EUV collector is installed in the installation orientation. This results in an EUV collector with improved collector efficiency.

Description

[0001] The invention relates to a method for incorporating an EUV collector into an EUV projection exposure system or into an assembly therefor. Furthermore, the invention relates to an EUV collector for carrying out the method, an illumination system with such a collector, an optical system with such an illumination system, a projection exposure system with such an optical system, a manufacturing method for producing a micro- or nanostructured component, and a micro- or nanostructured component produced by this method.

[0002] An EUV collector of the type mentioned above is known from WO 2017 / 174423 A1, from US 2013 / 0335816 A1 and from US 7 084412 B2.

[0003] It is an object of the present invention to further develop an EUV collector of the type mentioned at the outset in such a way that its collector efficiency is improved.

[0004] This problem is solved according to the invention by an EUV collector with the features specified in claim 1.

[0005] The stray light radiation can consist of pump light reflected from the plasma source area, which serves to generate a plasma in the plasma source area. In particular, the stray light radiation comprises components of the pump light. According to the invention, it was recognized that stray light suppression efficiency across a collector's usable area is not constant, but rather subject to fluctuations due to the manufacturing process. Based on this, system parameterization is performed by measuring the stray light suppression efficiency across the collector's usable area on the one hand and the stray light exposure intensity across a target installation area on the other. This allows for differentiation as to which of at least two possible installation orientations of the EUV collector is preferable to at least one other installation orientation with regard to stray light suppression efficiency.With a given EUV collector, this allows for optimized stray light suppression and thus improved collector efficiency, without requiring extensive post-processing of the EUV collector with regard to its stray light suppression efficiency.

[0006] Using the identification process steps according to claims 2 and 3, the low-suppression target area section and / or the high-exposure target area section can be reproducibly identified. An identification threshold, i.e., an upper limit of the mean stray light suppression efficiency and / or a lower limit of the mean stray light exposure intensity, can be adapted to the respective suppression efficiency or exposure intensity profile. The upper limit of the stray light suppression efficiency can be 90%, but it can also be lower, for example, 80%, 75%, 70%, 60%, 50%, 25%, or even 10% of the mean stray light suppression efficiency. This upper limit is typically greater than 0.1% of the mean stray light suppression efficiency.The lower limit of the measured stray light exposure intensity relative to the mean stray light exposure intensity can be 150%, but it can also be higher, for example 160%, 175%, 200%, 250%, 300%, 400%, 500%, or even 1,000%. This lower limit is typically less than one hundred times the mean stray light exposure intensity.

[0007] The advantages of an EUV collector according to claim 4 correspond to those already explained above with reference to the installation method.

[0008] The collector mounting can have a plurality of mounting arms, which are in particular arranged equally distributed around a circumference of the collector reflector, thus enabling a corresponding plurality of installation orientations of the EUV collector.

[0009] An orientation difference according to claim 5 has proven effective in practice. This orientation difference can also be at least 90 degrees or even 180 degrees, thus allowing for exactly two installation orientations. This simplifies the design of the collector mounting.

[0010] Stray light suppression in the EUV collector can be achieved using a diffraction grating. Such a grating can be a laminar grating or a blaze grating. It can be manufactured by material removal or etching, particularly mask etching. The diffraction efficiency of the grating can be very low in the 0th order. The suppression of the grating, i.e., the ratio between the 0th-order diffraction efficiency and the diffraction efficiency in higher orders, can be less than 1 / 100 and can be as low as 1 / 1000. The grating can be lithographically fabricated on the surface of the EUV collector.

[0011] The advantages of a lighting system according to claim 11, an optical system according to claim 12, a projection exposure system according to claim 13, a manufacturing method according to claim 14 and a micro- or nanostructured component according to claim 15 correspond to those already explained above with reference to the collector according to the invention.

[0012] The projection exposure system can be used to manufacture, in particular, a semiconductor component, for example a memory chip.

[0013] Exemplary embodiments of the invention are explained in more detail below with reference to the drawing. This drawing shows: Fig. 1 schematically a projection exposure system for EUV microlithography; Fig. 2 Details of a light source of the projection exposure system in the vicinity of an EUV collector for guiding EUV useful light from a plasma source area to a field facet mirror of an illumination optic of the projection exposure system, wherein the EUV collector is shown in a meridional section; Fig. 3 schematically a beam path of pump light from a pump light source of the EUV light source of the projection exposure system; Fig. 4. A view of the EUV collector, seen from viewpoint IV in Fig. 3, wherein a false light suppression efficiency over a usable area of ​​the EUV collector, namely a reflectivity of the usable area for infrared false light, is illustrated in a first orientation of the EUV collector relative to an installation target area in a useful light beam path at the location of an arrangement position of the usable area of ​​the EUV collector; Fig. 5 in one of the Fig. 4. The corresponding top view shows the installed target area in the useful light beam path, illustrating a false light exposure intensity, namely exposure to infrared light from a pump laser of the light source via the installed target area; and Fig. 6 in one of the Fig. 4 corresponding representation the EUV collector in an installation orientation which is the result of an installation procedure in which a low-suppression usable area section of the usable area of ​​the EUV collector does not coincide with a high-impact target area section of the target area.

[0014] A projection exposure system 1 for microlithography has a light source 2 for illumination light or imaging light 3, which will be explained in more detail below. The light source 2 is an EUV light source that generates light in a wavelength range, for example, between 5 nm and 30 nm, and in particular between 5 nm and 15 nm. The illumination or imaging light 3 is also referred to below as EUV working light.

[0015] Light source 2 can be, in particular, a light source with a wavelength of 13.5 nm or a light source with a wavelength of 6.9 nm. Other EUV wavelengths are also possible. A beam path of the illumination light 3 is shown in the Fig. 1 extremely schematically represented.

[0016] To guide the illumination light 3 from the light source 2 to an object field 4 in an object plane 5, an illumination optic 6 is used. The latter comprises a [missing information - likely a component or element] in the Fig. 1. A highly schematic field facet mirror FF and a highly schematic pupil facet mirror PF, also shown in general terms, are located in the beam path of the illumination light 3. Between the pupil facet mirror PF, which is arranged in a pupil plane 6a of the illumination optics, and the object field 4, a field-shaping mirror 6b for grazing incidence (GI mirror) is arranged in the beam path of the illumination light 3. Such a GI mirror 6b is not mandatory.

[0017] The pupil facets of the pupil facet mirror PF (not shown in detail) are part of a transmission optic that superimposes the field facets of the field facet mirror FF (also not shown) onto the object field 4 and, in particular, images them. An embodiment known from the prior art can be used for the field facet mirror FF on the one hand and the pupil facet mirror PF on the other. Such an illumination optic is known, for example, from DE 10 2009 045 096 A1.

[0018] Using a projection optic or imaging optic 7, the object field 4 is mapped onto an image field 8 in an image plane 9 at a predetermined reduction scale. Projection optics suitable for this purpose are known, for example, from DE 10 2012 202 675 A1.

[0019] To facilitate the description of the projection exposure system 1, a Cartesian xyz coordinate system is shown in the drawing, from which the respective positional relationships of the components depicted in the figures can be derived. In the Fig. 1. The x-direction runs perpendicular to the plane of the drawing and into it. The y-direction runs in the Fig. 1 to the left and the z-direction in the Fig. 1 upwards. The object plane 5 runs parallel to the xy-plane.

[0020] Object field 4 and image field 8 are rectangular. Alternatively, object field 4 and image field 8 can also be curved, specifically partially ring-shaped. Object field 4 and image field 8 have an xy aspect ratio greater than 1. This means that object field 4 has a longer object field dimension in the x-direction and a shorter object field dimension in the y-direction. These object field dimensions run along the field coordinates x and y.

[0021] For the projection optics 7, one of the embodiments known from the prior art can be used. Here, a section of a reflection mask 10, also referred to as a reticle, is projected, coinciding with the object field 4. The reticle 10 is supported by a reticle holder 10a. The reticle holder 10a is moved by a reticle displacement drive 10b.

[0022] The projection optics 7 image is projected onto the surface of a substrate 11 in the form of a wafer, which is supported by a substrate holder 12. The substrate holder 12 is moved by a wafer or substrate transfer drive 12a.

[0023] In the Fig. Figure 1 schematically shows a beam 13 of the illumination light 3 entering the projection optics 7 between the reticulum 10 and the projection optics 7, and a beam 14 of the illumination light 3 exiting the projection optics 7 between the projection optics 7 and the substrate 11. A field-side numerical aperture (NA) of the projection optics 7 is shown in the Fig. 1 not shown to scale.

[0024] Projection exposure system 1 is of the scanner type. Both the reticulum 10 and the substrate 11 are scanned in the y-direction during operation of projection exposure system 1. A stepper type of projection exposure system 1 is also possible, in which the reticulum 10 and the substrate 11 are moved stepwise in the y-direction between individual exposures of the substrate 11. These movements are synchronized with each other by appropriate control of the movement drives 10b and 12a.

[0025] Fig. Figure 2 shows details of light source 2.

[0026] Light source 2 is an LPP source (laser-produced plasma). For plasma generation, tin droplets 15 are produced as a continuous droplet sequence by a tin droplet generator 16. The trajectory of the tin droplets 15 runs perpendicular to a main beam direction 17 of the EUV useful light 3. The tin droplets 15 travel freely between the tin droplet generator 16 and a tin collector 18, passing through a plasma source region 19. The EUV useful light 3 is emitted from the plasma source region 19. In the plasma source region 19, the arriving tin droplet 15 is stimulated by pump light 20 from a pump light source 21. The pump light source 21 can be an infrared laser source, for example, a CO2 laser. Another IR laser source is also possible, in particular a solid-state laser, for example an Nd:YAG laser.

[0027] The pump light 20 is transferred to the plasma source area 19 via a mirror 22, which can be a controllably tiltable mirror, and a focusing lens 23. The pump light causes the tin droplet 15 arriving in the plasma source area 19 to be transformed into a plasma emitting the EUV useful light 3. A beam path of the EUV useful light 3 is shown in the Fig. Figure 2 shows the area between the plasma source region 19 and the field facet mirror FF, insofar as the EUV useful light is reflected by a collector mirror 24, which is hereinafter also referred to as the EUV collector 24. The EUV collector 24 has a central aperture 25 for the pump light 20, which is focused via the focusing lens 23 towards the plasma source region 19. The collector 24 is designed as an ellipsoidal mirror and transfers the EUV useful light 3 emitted by the plasma source region 19, which is arranged at one ellipsoidal focal point, to an intermediate focus 26 of the EUV useful light 3, which is arranged at the other ellipsoidal focal point of the collector 24.

[0028] The field facet mirror FF is arranged in the beam path of the EUV useful light 3 after the intermediate focus 26 in the area of ​​a far field of the EUV useful light 3.

[0029] The EUV collector 24 and other components of the light source 2, which may include the tin droplet generator 16, the tin collector 18, and the focusing lens 23, are arranged in a vacuum housing 27. The vacuum housing 27 has a through-opening 28 in the region of the intermediate focus 26. In the region of the entry of the pump light 20 into the vacuum housing 27, the latter has a pump light entry window 29.

[0030] Fig. Figure 3 shows a beam path of the pump light 20 between the focusing lens 23 and the aperture 28 in the Fig. 3. Vacuum housing only partially shown. 27. An xyz coordinate system is in the Fig. 3 compared to the Fig. 1 and Fig. 2 is tilted about the x-axis, which is perpendicular to the plane of the drawing, such that the z-axis runs along the main beam direction 17. An arrangement plane of the EUV collector 24 runs parallel to the xy-plane with respect to this coordinate system.

[0031] The pump light 20, focused by the focusing lens 23, is partially reflected in the plasma source region 19 by the tin droplet 15 entering this plasma source region 19 and, if applicable, by plasma already formed, in the form of a pump light component 31. This tin droplet 15 has a shape that does not reflect the pump light component 31 reflected by the tin droplet back into itself. The reflected pump light component 31 leaves the tin droplet with an angle of incidence that can be in the range between 5° and 35° and which, in the Fig. In the embodiment shown in Figure 3, the angle is approximately 20°. The pump light component 31 reflected by the tin droplet 15 strikes the EUV collector 24 in a pump light impact zone 32 that is decentered with respect to the pump light transmission aperture 25.

[0032] The EUV collector 24 is designed to guide the illumination light 3, i.e., the EUV useful light, from the source area 19 of the EUV light source 2 to the illumination optics 6 of the projection exposure system 1 via a reflective surface 33 of the EUV collector 24, and also to suppress stray light, namely the pump light 20, which illuminates the surface 33 of the EUV collector 24, particularly in the pump light emergence zone 32. To provide this suppression effect, an optical diffraction grating 34 for the pump light 20 is applied to the surface 33; this grating is not shown in detail in the drawing.

[0033] Fig. Figure 4 shows a top view of the EUV collector 24. This collector has a collector support 35 with a total of four support arms 36, 37, 38, and 39. The four support arms 36 to 39 are circumferentially fixed to a base body 40 of the EUV collector 24, which supports the usable area 33. The EUV collector 24 is attached to corresponding counter-supports of a support frame 41 via the support arms 36 to 39. This support frame can be part of the vacuum or negative pressure housing 27 (see Figure 4). Fig. 2).

[0034] The support arms 36 to 39 are arranged in the circumferential direction around a center Z of the usable area 33 or of the base body 40 in the same distribution, and thus have an angular distance of 90 degrees to each other in the circumferential direction around the center Z.

[0035] Overall, the collector holder 35 is designed in such a way that the EUV collector 24 can be installed in an arrangement position of the usable surface 33 in a total of four orientations of the usable surface 33 relative to an installation target surface 42 in the beam path of the illumination light 3, i.e. in the useful light beam path at the location of the arrangement position.

[0036] In the installed state, for example after the Fig. 2 and Fig. 3, the usable area 33 coincides with the installation target area 42.

[0037] Fig. Figure 4 shows the EUV collector 24 in one of a total of four possible installation orientations due to the fourfold symmetry of the collector bracket.

[0038] This is illustrated in the Fig. 4. Furthermore, the diffraction grating 34 has a stray light suppression efficiency over the working area 33. Approximately at the "eight o'clock" position, a weak suppression section 43 of the working area exists between the center Z and an edge of the working area 33. In this weak suppression section 43, the diffraction efficiency of the diffraction grating 34 for the pump light 20 is reduced compared to the diffraction efficiency over the rest of the working area 33. This diffraction efficiency in the weak suppression section 43 is, in particular, less than 90% of the mean stray light diffraction or suppression efficiency of the diffraction grating 34 and thus of the EUV collector 24.Depending on the design of the EUV collector 24, the stray light suppression efficiency in the low-suppression usable area section 43 can also be less than 90% of the mean stray light suppression efficiency and can, for example, be less than 80%, less than 70%, less than 60%, less than 50%, less than 40%, less than 30%, less than 20%, or even less than 10% of the mean stray light suppression efficiency. In extreme cases, no pump light diffraction may occur at all in the low-suppression usable area section 43.

[0039] Fig. Figure 5 shows the intensity of stray light exposure, i.e., the intensity of the pump light 20, across the target installation area 42 in the useful light beam path at the location of the useful surface 33 of the EUV collector 24 to be installed. This stray light exposure intensity is highest in the pump light impact zone 32. Outside the pump light impact zone 32, the stray light exposure intensity decreases continuously, as shown in the Fig. 5 illustrates.

[0040] The pump light impact zone 32 represents a high-impact target area section of the installed target area 42, in which the stray light impact intensity is greater than 150% of the average stray light impact intensity across the installed target area 42. Depending on the design of the EUV light source 2, the stray light impact intensity in the high-impact target area section 32 can also be greater than 175%, greater than 200%, greater than 250%, greater than 300%, greater than 400%, greater than 500%, or by an even greater factor than the average stray light impact intensity.

[0041] Fig. Figure 5 also illustrates the relative position of the high-impact target area section 32 to the low-impact usable area section 43 when the usable area 33 of the EUV collector 24 is installed according to Fig. 4 relative to the installation target area 42. With such an installation orientation, the high-impact target area section 32 on the one hand and the low-suppression usable area section 43 on the other hand overlap, so that precisely where a lot of pump light 20 hits the usable area 33, there is a comparatively weak diffraction efficiency, i.e. a weak stray light suppression efficiency.

[0042] Fig. Figure 6 shows another installation orientation of the EUV collector 24, in which it is rotated 180 degrees about an axis running through the center Z and parallel to the z-axis. The low-suppression usable surface section 43 is now in the "two o'clock" position. Due to the fourfold symmetry of the collector mount 35, the following also applies in this installation orientation: Fig. 6. It is possible to attach the support arms 36 to 39 to the counter-supports of the support frame 41.

[0043] Fig. Figure 5 shows the relative location of the weak suppression usable area section 43. opt Regarding the location of the high-impact target area section 32 of the installation target area 42. With the optimized installation orientation according to Fig. 6 overlap the weak suppression usable area section 43 opt and the high-impact target area section 32 does not, so that at the location of high impingement intensity of the pump light 20 there is no reduced diffraction efficiency of the diffraction grating 34 of the EUV collector 24.

[0044] When installing according to Fig. 6. The pump light 20 is therefore suppressed more effectively than with the installation orientation according to Fig. 4.

[0045] The two installation orientations according to the Fig. 4 and Fig. 6 therefore differ by 180 degrees in the circumferential direction around the center Z of the usable area 33. Due to the fourfold symmetry of the collector holder 35, installation orientations are possible which differ by 45 degrees in the circumferential direction around the center Z of the usable area 33.

[0046] The dashed line indicates... Fig. Figure 4 shows another variant of a collector support 45, which, in addition to the four support arms 36 to 39, has four further support arms 46 to 49. In total, the collector support 45 thus has eight support arms 36 to 39 and 46 to 49, which have an angular distance of 22.5 degrees between adjacent support arms in the circumferential direction around the center Z. Accordingly, the collector support 45 has eightfold symmetry, and a total of eight installation orientations of the usable area 33 of the EUV collector 24 relative to the target installation area 42 are possible, each differing by 22.5 degrees in the circumferential direction around the center Z.

[0047] When installing the EUV collector 24 in the projection exposure system 1, the stray light suppression efficiency is first measured across the usable area 33 of the EUV collector 24. For this purpose, the usable area 33 is illuminated with the pump light 20, and a detector sensitive to the pump light 20 and, in particular, with high spatial resolution, is used to measure the diffraction efficiency, i.e., the stray light suppression efficiency, of a respective section of the usable area 33. The measurement result is a diagram corresponding to the Fig. 4 or 6. To measure the diffraction efficiency, a measurement technique, possibly adapted, can be used, which is described in the technical article Development of an EUVL collector with infrared radiation suppression (spiedigitallibrary.org) ,https: / / www.spiedigitallibrary.org / conference-proceedings-ofspie / 9048 / 90483C / Development-of-an-EUVL-collector-with-infraredradiation-suppression / 10.1117 / 12.2049279.full?SSO=1,.

[0048] Subsequently, at least one low-noise suppression area section corresponding to low-noise suppression area section 43 is identified by having a measured false-light suppression efficiency that is lower than a predefined false-light suppression efficiency. The predefined false-light suppression efficiency can be an average false-light suppression efficiency across the entire area 33. The low-noise suppression area section is then identified as that section of the area 33 where the measured false-light suppression efficiency is less than 90% of the average false-light suppression efficiency. A corresponding upper tolerance limit can also be smaller and may, for example, be 85%, 80%, 75%, 70%, 60%, 50%, or even less. This upper limit is typically greater than 1%.

[0049] Furthermore, as part of the installation procedure, the intensity of stray light exposure across the installation target surface 42 is measured, i.e., the intensity of the pump light 20 across the installation target surface 42. This can again be done with a spatially resolved detector sensitive to the pump light 20. One result of this measurement of stray light exposure intensity across the installation target surface 42 is shown in the Fig. Figure 5 illustrates this. Alternatively, instead of a measurement, a simulation of the false light exposure intensity can also be performed, which is based on a model of the light source 2.

[0050] Subsequently, a high-exposure target area section of the installed target area 42 is identified by determining whether the measured false light exposure intensity is greater than a given false light exposure intensity. In the case of the Fig. 5 is the identified high-impact target area section, the pump light impact zone 32.

[0051] When identifying the high-exposure target area section 32, an average stray light exposure intensity can be determined across the installation target area 42, and at least one high-exposure target area section can be identified if the measured stray light exposure intensity is greater than 150% of the average stray light exposure intensity. The lower tolerance limit can be higher and may be, for example, 200%, 250%, 300%, 400%, 500%, or 1,000%. This lower limit is typically less than 1 × 10⁻⁶. 6 .

[0052] After identifying, on the one hand, at least one low-suppression usable area section 43 and, on the other hand, at least one high-exposure target area section 32, the usable area 33 of the EUV collector 24 is oriented relative to the installation target area 42 in an installation orientation in which the low-suppression usable area section 43 does not coincide with the high-exposure target area section 32. Such an installation orientation is in the Fig. 5 in relation to the pump light impact zone 32 and the weak suppression usable area section 43 opt shown.

[0053] The EUV collector 24 is then installed in this orientation. The corresponding mounting arms 36 to 39 or 36 to 39, 46 to 49 are connected to the corresponding counter-brackets of the support frame 41.

[0054] The base body of the EUV collector 24 can be made of aluminum. Alternative materials for this base body are copper, alloys containing copper and / or aluminum, or powder metallurgy alloys of copper and aluminum oxide.

[0055] To produce a micro- or nanostructured component, the projection exposure system 1 is used as follows: First, the reflection mask 10 or the reticle and the substrate or wafer 11 are provided. Then, a structure on the reticle 10 is projected onto a photosensitive layer of the wafer 11 using the projection exposure system 1. Developing the photosensitive layer then creates a micro- or nanostructure on the wafer 11, thus producing the microstructured component. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] WO 2017 / 174423 A1

[0002] US 2013 / 0335816 A1

[0002] US 7 084412 B2

[0002] DE 10 2009 045 096 A1

[0017] DE 10 2012 202 675 A1

[0018] Cited non-patent literature

[0000] Technical article Development of an EUVL collector with infrared radiation suppression (spiedigitallibrary.org) ,https: / / www.spiedigitallibrary.org / conference-proceedings-ofspie / 9048 / 90483C / Development-of-an-EUVL-collector-with-infraredradiation-suppression / 10.1117 / 12.2049279.full?SSO=1,

[0047]

Claims

[1] Method for installing an EUV collector (24), carried out - for guiding EUV useful light (3) from an EUV light source (2) of an EUV projection exposure system (1) by means of a usable area (33) of the EUV collector (24) to an illumination optic (6) of the EUV projection exposure system (1) and, - to suppress stray light (20) which affects the usable area (33) of the EUV collector (24) emanating from the EUV light source (2), into the EUV projection exposure system (1) or a module therefor, by the following steps: - Measuring stray light suppression efficiency across the usable area (33), - Identify at least one weak suppression usable area section (43) in which the measured stray light suppression efficiency is lower than a given stray light suppression efficiency, - Measuring the intensity of false light exposure via an installation target surface (42) in the useful light beam path at the location of an arrangement position of the useful surface (33) of the EUV collector (24) to be installed, - Identifying at least one high-exposure target area section (32) of the installation target area (42) in which the measured false light exposure intensity is greater than a given false light exposure intensity, - Orienting the usable area (33) relative to the installation target area (42) into an installation orientation in which the weak suppression usable area section (43) opt ) does not correspond to the heavy impact target area section (32), - Installing the EUV collector (24) in the installation orientation. [2] Method according to claim 1, characterized by , that the following steps are carried out to identify the weak suppression usable area section (43): - Determining an average stray light suppression efficiency across the usable area, - Identifying the weak suppression usable area section (43) where the measured stray light suppression efficiency is less than 90% of the mean stray light suppression efficiency. [3] Method according to claim 1 or 2, characterized by , that the following steps are carried out to identify the high-impact target area section (32): - Determining a mean stray light exposure intensity over the installation target area (42), - Identifying a high-exposure target area section (32) of the installation target area (42) in which the measured false light exposure intensity is greater than 150% of the mean false light exposure intensity. [4] EUV collector (24) for carrying out a method according to any one of claims 1 to 3, carried out - for guiding EUV useful light (3) from an EUV light source (2) by means of a usable area (33) of the EUV collector (24) to an illumination optic (6) of an EUV projection exposure system (1) and - to suppress stray light (20) which affects the usable area (33) of the EUV collector (24) emanating from the EUV light source (2), - with a collector holder (35; 45) designed in such a way that the EUV collector (24) can be installed in an arrangement position of the usable area (33) in at least two orientations of the usable area (33) relative to an installation target area (42) in the useful light beam path at the location of the arrangement position. [5] EUV collector according to claim 4, characterized by that two of the possible orientations of the usable area (33) differ relative to the installation target area (42) by at least 45 degrees in the circumferential direction around a center (Z) of the usable area (33). [6] Lighting system with an EUV collector (24) according to one of claims 4 or 5 and with a lighting optic (6) for illuminating an object field (4) in which an object (10) to be imaged can be arranged, with the EUV useful light (3). [7] Optical system comprising an illumination system according to claim 6 and a projection optic (7) for imaging the object field (4) into an image field (8) in which a substrate (11) can be arranged onto which a section of the object (10) to be imaged is to be imaged. [8] Projection exposure system (1) with an optical system according to claim 7 and with an EUV light source (2). [9] Method for manufacturing a structured component comprising the following process steps: - Installing an EUV collector (24) in a projection exposure system according to claim 8 using the installation method according to one of claims 1 to 3, - Providing a reticule (10) and a wafer (11), - Projecting a structure on the reticulum (10) onto a light-sensitive layer of the wafer (11) using the projection exposure system, - Creating a micro- and / or nanostructure on the wafer (11). [10] Structured component manufactured according to a method according to claim 9.

Images