Thermoelectric device and thermoelectric system including the same

Abstract

A thermoelectric module array according to an embodiment of the present invention includes a first thermoelectric module and a second thermoelectric module disposed adjacent to the first thermoelectric module. The first thermoelectric module includes a first lower substrate, a plurality of semiconductor elements disposed on the first lower substrate, and a first upper substrate disposed on the plurality of semiconductor elements. The second thermoelectric module includes a second lower substrate, a plurality of semiconductor elements disposed on the second lower substrate, and a second upper substrate disposed on the plurality of semiconductor elements. The first thermoelectric module includes a first groove, and the second thermoelectric module includes a second groove disposed at a position corresponding to the first groove.

Description

Technical Field

[0001] The present invention relates to a thermoelectric device, and more particularly, to a thermoelectric device that utilizes a temperature difference between a low-temperature portion and a high-temperature portion of a thermoelectric element, and a thermoelectric system including the same.

Background Art

[0002] The thermoelectric phenomenon is a phenomenon generated by the movement of electrons and holes inside a material, and means a direct energy conversion between heat and electricity.

[0003] A thermoelectric element is a general term for elements that utilize the thermoelectric phenomenon, and has a structure in which a P-type thermoelectric material and an N-type thermoelectric material are joined between metal electrodes to form a PN junction pair.

[0004] Thermoelectric elements can be classified into elements that utilize the temperature change of electrical resistance, elements that utilize the Seebeck effect, which is a phenomenon in which an electromotive force is generated due to a temperature difference, and elements that utilize the Peltier effect, which is a phenomenon in which heat absorption or heat generation occurs due to an electric current.

[0005] Thermoelectric elements are variously applied to home appliances, electronic components, communication components, and the like. For example, thermoelectric elements can be applied to cooling devices, heating devices, power generation devices, and the like. Along with this, the requirements for the thermoelectric performance of thermoelectric elements are gradually increasing.

[0006] Recently, there has been a need to generate electricity using high-temperature heat and thermoelectric elements in automobiles, ships, and the like. At this time, a fluid flow portion through which a first fluid passes is arranged on the low-temperature portion side of the thermoelectric element, a heat sink is arranged on the high-temperature portion side of the thermoelectric element, and a second fluid having a temperature higher than that of the first fluid can pass through the heat sink. Along with this, electricity can be generated by the temperature difference between the low-temperature portion and the high-temperature portion of the thermoelectric element.

Summary of the Invention

Problems to be Solved by the Invention

[0007] The technical problem to be solved by the present invention is to provide a thermoelectric device that utilizes the temperature difference between the low-temperature part and the high-temperature part of a thermoelectric element, and a thermoelectric system including the same.

Means for Solving the Problem

[0008] The thermoelectric module array according to an embodiment of the present invention includes a first thermoelectric module and a second thermoelectric module disposed adjacent to the first thermoelectric module. The first thermoelectric module includes a first lower substrate, a plurality of semiconductor elements disposed on the first lower substrate, and a first upper substrate disposed on the plurality of semiconductor elements. The second thermoelectric module includes a second lower substrate, a plurality of semiconductor elements disposed on the second lower substrate, and a second upper substrate disposed on the plurality of semiconductor elements. The first thermoelectric module includes a first groove, and the second thermoelectric module includes a second groove disposed at a position corresponding to the first groove.

[0009] The plurality of semiconductor elements disposed on the first lower substrate include a first-1 semiconductor element disposed in a first region of the first lower substrate and a first-2 semiconductor element disposed in a second region of the first lower substrate. The plurality of semiconductor elements disposed on the second lower substrate include a second-1 semiconductor element disposed in a third region of the second lower substrate and a second-2 semiconductor element disposed in a fourth region of the second lower substrate. The first upper substrate may include a first-1 upper substrate disposed on the first-1 semiconductor element and the first-2 upper substrate disposed on the first-2 semiconductor element. The second upper substrate may include a second-1 upper substrate disposed on the second-1 semiconductor element and a second-2 upper substrate disposed on the second-2 semiconductor element.

[0010] The first groove may be formed on one side of the first lower substrate, and the second groove may be formed on one side of the second lower substrate.

[0011] The first groove and the second groove may be disposed at a position corresponding to the region between the first-1 upper substrate and the first-2 upper substrate.

[0012] It includes a frame disposed on the first lower substrate and the second lower substrate and arranged between the first upper substrate and the second upper substrate, and the frame can include holes corresponding to the first groove and the second groove.

[0013] The frame can be arranged between the first-1 upper substrate and the first-2 upper substrate and between the second-1 upper substrate and the second-2 upper substrate.

[0014] It further includes a connection electrode connecting the first region and the second region, and the first groove and the second groove can be arranged at positions overlapping each other along a direction perpendicular to the direction in which the connection electrode extends.

[0015] It further includes a fastening member arranged in the first groove and the second groove. The first upper substrate includes a first cutting portion, the second upper substrate includes a second cutting portion, and the first cutting portion and the second cutting portion can be the corners adjacent to the fastening member of the first upper substrate and the second upper substrate.

[0016] The frame can have a shape corresponding to the first cutting portion and the second cutting portion.

[0017] It can include a first insulating layer arranged between the first lower substrate and the plurality of semiconductor elements, and a second insulating layer arranged between the plurality of semiconductor elements and the first upper substrate.

[0018] It can further include a third insulating layer arranged between the first insulating layer and the plurality of semiconductor elements.

[0019] It can further include an extension electrode extending from the first electrode portion to one side on the first lower substrate, and an insulating member arranged on the extension electrode.

[0020] The ratio of the distance from the extension electrode to the end of the first lower substrate to the distance from the end to the closest semiconductor element among the plurality of semiconductor elements can be 1.5 or more and 3.5 or less.

[0021] The ratio of the height of the insulating member to the distance from the extension electrode to the end of the first lower substrate may be 0.25 or more and 0.7 or less.

[0022] A thermoelectric module array according to another embodiment of the present invention includes a first lower substrate, a plurality of semiconductor elements disposed on the first lower substrate, and a first-1 upper substrate and a first-2 upper substrate disposed on the plurality of semiconductor elements. The first lower substrate includes a first-1 groove and a first-2 groove, and an imaginary line connecting the center of the first-1 groove and the center of the first-2 groove is disposed in a region between the first-1 upper substrate and the first-2 upper substrate.

[0023] A thermoelectric module array according to still another embodiment of the present invention includes a first lower substrate, a plurality of first electrode portions disposed on the first lower substrate, a plurality of semiconductor elements disposed on the first electrode portions, a first upper substrate disposed on the plurality of semiconductor elements, an extension electrode extending from the first electrode portion to one side, and an insulating member disposed on the extension electrode. The insulating member includes a resin portion and an insulating frame having an opening formed to accommodate the resin portion, and the resin portion is disposed on the extension electrode.

[0024] A thermoelectric device according to an embodiment of the present invention includes a fluid flow portion including a first surface and a second surface spaced apart from the first surface along a first direction, a first thermoelectric module disposed on the first surface of the fluid flow portion, and a second thermoelectric module disposed on the second surface of the fluid flow portion. The fluid flow portion includes a flow path region including a flow path formed along a second direction perpendicular to the first direction, a fluid inflow region disposed on one side of the flow path region and including a first hole formed along the second direction, a fluid discharge region disposed on the other side of the flow path region and including a second hole formed along the second direction, and a first step portion disposed between the first hole and the flow path. The first step portion includes a first step surface and a first chamfered surface extending from the first step surface so as to be inclined toward the flow path.

[0025] The first fluid passes through the fluid inlet region, the flow path region, and the fluid discharge region along the second direction, and the second fluid, which is at a higher temperature than the first fluid, can pass through the heat sinks of the first thermoelectric module and the second thermoelectric module in a third direction perpendicular to the first direction and the second direction.

[0026] The first step surface may be a surface parallel to the surface perpendicular to the second direction.

[0027] The height of the first step surface may be 1 mm or more from the wall surface of the first hole.

[0028] The first chamfer surface may be inclined at an angle of 5 degrees to 85 degrees with respect to the surface perpendicular to the first step surface.

[0029] The length of the first chamfer surface may be 3 times or more the height of the first step surface.

[0030] The cross-sectional area of the first hole may be larger than the cross-sectional area of the flow path.

[0031] It further includes a second step portion disposed between the flow path and the second hole, and the second step portion may include a second step surface and a second chamfer surface extending so as to be inclined from the second step surface toward the flow path.

[0032] The thermoelectric device according to another embodiment of the present invention includes a fluid flow portion including a first surface and a second surface spaced apart from the first surface along the first direction, a first thermoelectric module disposed on the first surface of the fluid flow portion, and a second thermoelectric module disposed on the second surface of the fluid flow portion. The fluid flow portion includes a flow path region including a flow path formed along a second direction perpendicular to the first direction, a fluid inlet region disposed on one side of the flow path region and including a first hole formed along the second direction, and a fluid discharge region disposed on the other side of the flow path region and including a second hole formed along the second direction. A first groove having a predetermined depth is formed in the wall surface of the first hole.

[0033] The first fluid passes through the fluid inlet region, the flow path region, and the fluid discharge region along the second direction, and the second fluid, which is at a higher temperature than the first fluid, can pass through the heat sinks of the first thermoelectric module and the second thermoelectric module in a third direction perpendicular to the first direction and the second direction.

[0034] The first groove may be formed in a continuous ring shape along the wall surface of the first hole.

[0035] The first groove may be formed in a discontinuous ring shape along the wall surface of the first hole.

[0036] The length of the first groove may be 20% or more of the perimeter of the wall surface of the first hole.

[0037] The first groove may be formed in a spiral shape along the wall surface of the first hole.

[0038] It may further include a stepped portion disposed between the first hole and the flow path.

[0039] The first groove may be formed to extend along the second direction from one side of the fluid inlet region to the stepped portion, which is the other side of the fluid inlet region.

[0040] A second groove spaced from the first groove and having a predetermined depth may be further formed on the wall surface of the first hole.

[0041] The first groove and the second groove are arranged in sequence along the second direction from one side of the fluid inlet region to the other side of the fluid inlet region, and at least one of the distance from one side of the fluid inlet region to the first groove and the distance from the second groove to the stepped portion, which is the other side of the fluid inlet region, may be equal to or greater than the distance between the first groove and the second groove.

[0042] A thermoelectric device according to still another embodiment of the present invention includes a fluid flow portion including a first surface and a second surface spaced apart from the first surface in a first direction, a first thermoelectric module disposed on the first surface, a second thermoelectric module disposed on the second surface, a first shield member disposed on a third surface formed between the first surface and the second surface and extending so as to cover at least a part of the first surface and the second surface, a second shield member disposed on the first surface and the first thermoelectric module and covering at least a part of the first shield member, and a third shield member disposed on a fourth surface facing the third surface and extending so as to cover at least a part of the second shield member.

[0043] The fluid flow portion includes a flow path region formed such that a first fluid flows along a second direction intersecting the first direction between the first surface and the second surface. The first thermoelectric module includes a first substrate disposed on the first surface, a first electrode portion disposed on the first substrate, a semiconductor element disposed on the first electrode portion, a second electrode portion disposed on the semiconductor element, a second substrate disposed on the second electrode portion, and a heat sink disposed on the second substrate so as to contact a second fluid that is at a higher temperature than the first fluid. The second fluid can flow along a third direction from the fourth surface toward the third surface.

[0044] The second shield member includes a through hole through which the heat sink is exposed, and an edge of the through hole can be disposed on the second substrate.

[0045] The first thermoelectric module can further include an extension electrode extending from the first electrode portion in a direction toward the fourth surface on the first substrate.

[0046] The first thermoelectric module further includes a wiring connected to the extension electrode, and at least a part of the wiring can be covered by the third shield member.

[0047] The fluid flow portion includes a fluid inlet region disposed on one side of the flow path region and a fluid discharge region disposed on the other side of the flow path region spaced apart from the one side in the second direction. The first thermoelectric module and the second shield member are disposed on the flow path region, and may further include a fifth shield member disposed on the fluid inlet region and a sixth shield member disposed on the fluid discharge region.

[0048] The fifth shield member and the sixth shield member each extend to cover a part of the third surface and the fourth surface of the fluid flow portion, and the fifth shield member may include a groove formed on the fourth surface.

[0049] The wiring can be drawn out through the groove.

[0050] It may further include a first heat insulating member disposed between the third surface and the first shield member and a second heat insulating member disposed between the fourth surface and the third shield member.

[0051] It may further include a sealing member disposed between the second shield member and the third shield member.

[0052] It further includes a fourth shield member disposed on the second surface of the fluid flow portion and on the second thermoelectric module, and extending to cover a part of the first shield member on the third surface. The third shield member may be extended to further cover a part of the fourth shield member on the second surface.

[0053] A thermoelectric system according to an embodiment of the present invention includes a first thermoelectric device, a second thermoelectric device disposed at a distance from the first thermoelectric device along a first direction, a wiring portion electrically connected to the first thermoelectric device and the second thermoelectric device, and a wiring protection portion disposed on one upper side of the first thermoelectric device and the second thermoelectric device so as to surround at least a part of the wiring portion. The wiring protection portion includes a bottom portion disposed on the first thermoelectric device and the second thermoelectric device, a first side wall extending from a first end of the bottom portion toward an upper direction of the bottom portion, a second side wall extending from a second end of the bottom portion, which is spaced apart from the first end of the bottom portion along the first direction, toward an upper direction with respect to the bottom portion, a third side wall disposed between the first side wall and the second side wall and extending from a third end between the first end and the second end of the bottom portion toward the upper direction, a fourth side wall disposed between the first side wall and the second side wall and extending from a fourth end of the bottom portion, which is spaced apart from the third end of the bottom portion in a second direction intersecting the first direction and the upper direction, toward the upper direction, a first top portion extending from the third side wall in the second direction and spaced apart from the bottom portion, a second top portion extending from the fourth side wall in a direction opposite to the second direction and spaced apart from the bottom portion, and a fifth side wall extending from the second top portion in the upper direction and connected to the first top portion. A distance between the third side wall and the fifth side wall gradually decreases along the upper direction.

[0054] The height of the first top portion with respect to the bottom portion may be higher than the height of the second top portion with respect to the bottom portion.

[0055] An angle formed by the third side wall and the fifth side wall may be 10 to 70 degrees.

[0056] A distance between the third side wall and the fourth side wall may gradually decrease along the upper direction.

[0057] The wiring protection portion may be disposed between the first side wall and the second side wall and may further include a shield cover portion covering at least a part of the first top portion, the second top portion, and the fifth side wall.

[0058] At least one fastening hole is formed in each of the first top portion and the second top portion, and can be fastened to the shield cover portion through the at least one fastening hole.

[0059] The wiring protection portion may further include a first heat insulating member disposed between the bottom portion and the first top portion and a second heat insulating member disposed between the bottom portion and the second top portion.

[0060] It may further include an upper structure disposed on the upper portions of the other sides of the first thermoelectric device and the second thermoelectric device.

[0061] The shapes of the wiring protection portion and the upper structure may be symmetric to each other.

[0062] It further includes a first hole and a second hole formed at intervals along the first direction from the bottom portion, and a third hole formed in the third side wall. The first wiring connected to the first thermoelectric device penetrates the first hole and is drawn out to the outside through the third hole. The second wiring connected to the second thermoelectric device penetrates the second hole and can be drawn out to the outside through the third hole.

[0063] A thermoelectric system according to another embodiment of the present invention includes a first thermoelectric system and a second thermoelectric system disposed below the first thermoelectric system. The first thermoelectric system includes a first thermoelectric device, a second thermoelectric device disposed at a distance along a first direction from the first thermoelectric device, a first wiring portion electrically connected to the first thermoelectric device and the second thermoelectric device, and a first wiring protection portion disposed on an upper side of one side of the first thermoelectric device and the second thermoelectric device so as to surround at least a part of the first wiring portion. The second thermoelectric system includes a third thermoelectric device, a fourth thermoelectric device disposed at a distance along a first direction from the third thermoelectric device, a second wiring portion electrically connected to the third thermoelectric device and the fourth thermoelectric device, and a second wiring protection portion disposed on an upper side of one side of the third thermoelectric device and the fourth thermoelectric device so as to surround at least a part of the second wiring portion. Each of the first to fourth thermoelectric devices includes a flow path region formed so that a first fluid penetrates along a second direction perpendicular to the first direction. A second fluid that is at a higher temperature than the first fluid flows between the first thermoelectric device and the second thermoelectric device and between the third thermoelectric device and the fourth thermoelectric device along a third direction perpendicular to the first direction and the second direction. The width of the bottom portion of the second wiring protection portion is 0.98 to 1.02 times the width of the top portion of the second wiring protection portion.

[0064] The thermoelectric system further includes a first upper structure symmetrically disposed on an upper side of the other side of the first thermoelectric device and the second thermoelectric device with respect to the first wiring protection portion, and a second upper structure symmetrically disposed on an upper side of the other side of the third thermoelectric device and the fourth thermoelectric device with respect to the second wiring protection portion. The distance between opposing surfaces of the first wiring protection portion and the first upper structure gradually narrows along the direction in which the second fluid flows. The shortest distance between the bottom of the second wiring protection portion and the bottom of the second upper structure can be 0.96 to 1.04 times the shortest distance between the top of the second wiring protection portion and the top of the second upper structure.

[0065] The first wiring protection part includes a first bottom disposed on the first thermoelectric device and the second thermoelectric device, a first side wall extending upward from a first end of the first bottom with respect to the first bottom, a second side wall extending upward from a second end spaced from the first end of the first bottom along the first direction with respect to the first bottom, a third side wall disposed between the first side wall and the second side wall and extending upward from a third end between the first end and the second end of the first bottom in the upward direction, a fourth side wall disposed between the first side wall and the second side wall and extending upward from a fourth end spaced from the third end of the first bottom in the second direction in the upward direction, a first top part extending from the third side wall in the second direction spaced from the first bottom, a second top part extending from the fourth side wall in a direction opposite to the second direction spaced from the first bottom, and a fifth side wall extending upward from the second top part and connected to the first top part, and a distance between the third side wall and the fifth side wall may gradually decrease along the upward direction.

[0066] The second wiring protection part includes a second bottom disposed on the third thermoelectric device and the fourth thermoelectric device, a sixth side wall extending upward from a fifth end of the second bottom with respect to the second bottom, a seventh side wall extending upward from a sixth end spaced from the fifth end of the second bottom along the first direction with respect to the second bottom, an eighth side wall disposed between the sixth side wall and the seventh side wall and extending upward from a seventh end between the fifth end and the sixth end of the second bottom in the upward direction, a ninth side wall disposed between the sixth side wall and the seventh side wall and extending upward from an eighth end spaced from the seventh end of the second bottom in the second direction in the upward direction, and a third top part extending from the eighth side wall in the second direction spaced from the second bottom, the ninth side wall extends to the third top part, and the eighth side wall and the ninth side wall may be parallel to each other.

Advantages of the Invention

[0067] According to an embodiment of the present invention, a thermoelectric device can be obtained that has a simple structure and is easy to assemble, while being able to accommodate the maximum number of thermoelectric elements within a predetermined space.

[0068] According to an embodiment of the present invention, a thermoelectric device with high thermoelectric performance can be obtained by increasing the temperature difference between the high-temperature part and the low-temperature part.

[0069] The thermoelectric device according to an embodiment of the present invention can be applied to a power generation device that generates electricity by utilizing the temperature difference between a high-temperature part and a low-temperature part.

[0070] The thermoelectric device according to an embodiment of the present invention can be applied to a Peltier device that cools or heats a specific object such as a fluid.

Brief Description of the Drawings

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Modes for Carrying Out the Invention

[0072] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0073] However, the technical idea of the present invention is not limited to some of the described embodiments and can be embodied in various different forms, and within the scope of the technical idea of the present invention, one or more of the components can be selectively combined and replaced between the embodiments for use.

[0074] Also, the terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted in a meaning generally understood by those having ordinary knowledge in the technical field to which the present invention pertains, unless clearly defined and described otherwise, and terms generally used like those defined in a dictionary can be interpreted considering their meaning in the context of the related art.

[0075] Also, the terms used in the embodiments of the present invention are for explaining the embodiments and are not intended to limit the present invention.

[0076] In this specification, unless otherwise specified in the context, the singular form also includes the plural form. When it is described as "at least one (or one or more) of A, B, and C", it can include one or more of all combinations that can be combined with A, B, and C.

[0077] Also, when describing the components of the embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. can be used.

[0078] Such terms are merely for distinguishing the components from other components, and are not limited to the essence, order, or sequence of the corresponding components by such terms.

[0079] And when a certain component is described as "connected", "coupled", or "joined" to another component, that component can include not only the case where it is directly connected, coupled, or joined to the other component, but also the case where it is "connected", "coupled", or "joined" by still other components between that component and the other component.

[0080] Also, when it is described as being formed or arranged "above or below" each component, "above or below" includes not only the case where two components are in direct contact with each other, but also the case where one or more still other components are formed or arranged between the two components. Also, when expressed as "above or below", it can include the meaning not only in the upward direction but also in the downward direction with respect to one component as a reference.

[0081] FIG. 1 is a perspective view of a thermoelectric device according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view of the thermoelectric device according to an embodiment of the present invention.

[0082] Referring to FIGS. 1 to 2, the thermoelectric device 1000 includes a fluid flow portion 1100 and a thermoelectric module 1200 disposed on the surface of the fluid flow portion 1100.

[0083] The thermoelectric device 1000 according to an embodiment of the present invention can produce electric power by utilizing the temperature difference between a first fluid flowing through the inside of the fluid flow unit 1100 and a second fluid passing through the outside of the fluid flow unit 1100. A plurality of thermoelectric devices 1000 may be arranged in parallel at predetermined intervals to form a thermoelectric system. According to this, the thermoelectric performance or power generation performance per unit area can be maximized. The thermoelectric device may be referred to as a power generation device, and the thermoelectric system may be referred to as a power generation system.

[0084] The first fluid flowing into the fluid flow unit 1100 may be water, but is not limited thereto, and may be various types of fluids having cooling performance. The temperature of the first fluid flowing into the fluid flow unit 1100 may be less than 100 °C, preferably less than 50 °C, more preferably less than 40 °C, but is not limited thereto, and may be a fluid having a temperature lower than that of the second fluid. The temperature of the first fluid discharged after passing through the fluid flow unit 1100 may be higher than the temperature of the first fluid flowing into the fluid flow unit 1100.

[0085] According to an embodiment of the present invention, the thermoelectric module 1200 may be disposed on the first surface 1110 of the fluid flow unit 1100 and the second surface 1120 facing the first surface 1110. The first fluid can flow from one side surface 1150 between the first surface 1110 and the second surface 1120 toward the other side surface 1160 facing the one side surface 1150 between the first surface 1110 and the second surface 1120. For this purpose, a fluid inlet may be disposed on one side surface, and a fluid outlet may be disposed on the other side surface. The second fluid can flow from the fourth surface 1140, which is the upper surface between the first surface 1110 and the second surface 1120, toward the third surface 1130, which is the lower surface between the first surface 1110 and the second surface 1120. For convenience of explanation, in this specification, the direction from the first surface 1110 toward the second surface 1120 may be referred to as the first direction, the direction in which the first fluid passes may be referred to as the second direction, and the direction in which the second fluid passes may be referred to as the third direction, but is not limited thereto.

[0086] On the one hand, the second fluid passes through the outside of the fluid flow portion 1100, for example, the heat sink of the thermoelectric module 1200 disposed outside the fluid flow portion 1100. The second fluid can be exhaust heat or intake heat of an automobile, a ship, etc., but is not limited thereto. For example, the temperature of the second fluid can be 100 °C or higher, preferably 200 °C or higher, more preferably 220 °C to 250 °C, but is not limited thereto, and can be a fluid having a temperature higher than the temperature of the first fluid.

[0087] In this specification, the temperature of the first fluid flowing through the inside of the fluid flow portion 1100 will be described by taking as an example that it is lower than the temperature of the second fluid passing through the heat sink 1220 of the thermoelectric module 1200 disposed outside the fluid flow portion 1100. Accordingly, in this specification, the fluid flow portion 1100 may be referred to as a duct or a cooling portion. However, the embodiments of the present invention are not limited thereto, and the temperature of the first fluid flowing through the inside of the fluid flow portion 1100 may be higher than the temperature of the second fluid passing through the heat sink 1220 of the thermoelectric module 1200 disposed outside the fluid flow portion 1100.

[0088] According to an embodiment of the present invention, the thermoelectric module 1200 includes a thermoelectric element and a heat sink 1220 disposed on the thermoelectric element. The thermoelectric element according to the embodiment of the present invention can have the structure of the thermoelectric element 100 illustrated in FIGS. 3 to 4.

[0089] Referring to FIGS. 3 to 4, the thermoelectric element 100 includes a first substrate 110, a first electrode portion 120, a P-type semiconductor element 130, an N-type semiconductor element 140, a second electrode portion 150, and a second substrate 160.

[0090] The first electrode portion 120 is disposed between the first substrate 110 and the lower bottom surfaces of the P-type semiconductor element 130 and the N-type semiconductor element 140, and the second electrode portion 150 is disposed between the second substrate 160 and the upper bottom surfaces of the P-type semiconductor element 130 and the N-type semiconductor element 140. Accordingly, the plurality of P-type semiconductor elements 130 and the plurality of N-type semiconductor elements 140 are electrically connected by the first electrode portion 120 and the second electrode portion 150. A pair of P-type semiconductor element 130 and N-type semiconductor element 140 disposed between and electrically connected to the first electrode portion 120 and the second electrode portion 150 can form a unit cell.

[0091] For example, when a voltage is applied to the first electrode portion 120 and the second electrode portion 150 through the output lines 181 and 182, the substrate through which current flows from the P-type semiconductor element 130 to the N-type semiconductor element 140 by the Peltier effect absorbs heat and acts as a cooling part, and the substrate through which current flows from the N-type semiconductor element 140 to the P-type semiconductor element 130 can be heated to act as a heat generating part. Or when a temperature difference is applied between the first electrode portion 120 and the second electrode portion 150, charges in the P-type semiconductor element 130 and the N-type semiconductor element 140 may move due to the Seebeck effect to generate electricity.

[0092] Here, the P-type semiconductor element 130 and the N-type semiconductor element 140 can be bismuth telluride (Bi-Te)-based semiconductor elements containing bismuth (Bi) and tellurium (Te) as main raw materials. The P-type semiconductor element 130 can be a bismuth telluride (Bi-Te)-based thermoelectric leg containing at least one of antimony (Sb), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In). For example, the P-type semiconductor element 130 contains 99 to 99.999 wt% of Bi-Sb-Te as the main raw material substance with respect to the total weight of 100 wt%, and can contain at least one of nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), and indium (In) at 0.001 to 1 wt%. The N-type semiconductor element 140 can be a bismuth telluride (Bi-Te)-based thermoelectric leg containing at least one of selenium (Se), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), tellurium (Te), bismuth (Bi), and indium (In). For example, the N-type semiconductor element 140 contains 99 to 99.999 wt% of Bi-Se-Te as the main raw material substance with respect to the total weight of 100 wt%, and can contain at least one of nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), lead (Pb), boron (B), gallium (Ga), and indium (In) at 0.001 to 1 wt%.

[0093] The P-type semiconductor element 130 and the N-type semiconductor element 140 can be formed in a bulk type or a laminated type. Generally, the bulk type P-type semiconductor element 130 or the bulk type N-type semiconductor element 140 can be obtained through a process of heat-treating a thermoelectric material to produce an ingot, crushing the ingot and sieving it to obtain powder for a thermoelectric leg, sintering this, and cutting the sintered body. At this time, the P-type semiconductor element 130 and the N-type semiconductor element 140 can be polycrystalline thermoelectric legs. Thus, when the P-type semiconductor element 130 and the N-type semiconductor element 140 are polycrystalline thermoelectric legs, the strength of the P-type semiconductor element 130 and the N-type semiconductor element 140 can be increased. The laminated type P-type semiconductor element 130 or the laminated type N-type semiconductor element 140 can be obtained through a process of applying a paste containing a thermoelectric material onto a sheet-like base material to form unit members, and then laminating and cutting the unit members.

[0094] At this time, the pair of P-type semiconductor element 130 and N-type semiconductor element 140 can have the same shape and volume, or can have different shapes and volumes from each other. For example, since the electrical conduction characteristics of the P-type semiconductor element 130 and the N-type semiconductor element 140 are different, the height or cross-sectional area of the N-type semiconductor element 140 may be formed to be different from the height or cross-sectional area of the P-type semiconductor element 130.

[0095] At this time, the P-type semiconductor element 130 or the N-type semiconductor element 140 can have a cylindrical shape, a polygonal column shape, an elliptical column shape, etc.

[0096] In this specification, the semiconductor element may also be referred to as a thermoelectric leg, a thermoelectric structure, a semiconductor structure, etc.

[0097] The performance of the thermoelectric element according to an embodiment of the present invention can be indicated by a thermoelectric figure of merit (ZT). The thermoelectric figure of merit (ZT) can be shown as in Mathematical Formula 1.

[0098] [Mathematical Formula 1]

Number

[0099] Here, α is the Seebeck coefficient [V / K], σ is the electrical conductivity [S / m], and α2σ is the power factor ([W / mK2]). And T is the temperature, and k is the thermal conductivity [W / mK]. k can be expressed as a·cp·ρ, where a is the thermal diffusivity [cm2 / S], cp is the specific heat [J / gK], and ρ is the density [g / cm3].

[0100] To obtain the thermoelectric performance index of the thermoelectric element, the Z value (V / K) can be measured using a Z meter, and the thermoelectric performance index (ZT) can be calculated using the measured Z value.

[0101] Here, the first electrode portion 120 disposed between the first substrate 110 and the P-type semiconductor element 130 and the N-type semiconductor element 140, and the second electrode portion 150 disposed between the second substrate 160 and the P-type semiconductor element 130 and the N-type semiconductor element 140 include at least one of copper (Cu), silver (Ag), aluminum (Al), and nickel (Ni), and can have a thickness of 0.01 mm to 0.3 mm. When the thickness of the first electrode portion 120 or the second electrode portion 150 is less than 0.01 mm, the function as an electrode may deteriorate and the electrical conduction performance may be low. When it exceeds 0.3 mm, the conduction efficiency may be low due to an increase in resistance.

[0102] The first substrate 110 and the second substrate 160 facing each other can be metal substrates, and their thickness can be 0.1 mm to 1.5 mm. If the thickness of the metal substrate is less than 0.1 mm or exceeds 1.5 mm, the heat dissipation characteristics or the thermal conductivity may become excessively high, so the reliability of the thermoelectric element may decrease. Also, when the first substrate 110 and the second substrate 160 are metal substrates, insulating layers 170 can be further formed between the first substrate 110 and the first electrode portion 120 and between the second substrate 160 and the second electrode portion 150, respectively. The insulating layer 170 can include a material having a thermal conductivity of 1 to 20 W / mK. At this time, the insulating layer 170 can be a resin composition containing at least one of an epoxy resin and a silicone resin and an inorganic substance, a layer made of a silicone composite containing silicon and an inorganic substance, or an aluminum oxide layer. Here, the inorganic substance can be at least one of oxides, nitrides, and carbides such as aluminum, boron, and silicon.

[0103] Each insulating layer 170 can be a single insulating layer or a plurality of insulating layers having different compositions. At least a part of at least one side surface of the first electrode portion 120 and the second electrode portion 150 is filled with the insulating layer 170, and the upper surface of the insulating layer 170 disposed between the plurality of electrodes included in each electrode portion can have a shape recessed toward each substrate. When each insulating layer 170 is a plurality of insulating layers, at least a part of at least one side surface of the first electrode portion 120 and the second electrode portion 150 is filled with the insulating layer 170 disposed at the uppermost part with respect to each substrate, and the uppermost surface of the insulating layer 170 disposed between the plurality of electrodes included in each electrode portion can have a shape recessed toward each substrate.

[0104] At this time, the sizes of the first substrate 110 and the second substrate 160 may be formed to be different. That is, one of the volume, thickness, or area of the first substrate 110 and the second substrate 160 may be formed larger than the other volume, thickness, or area. Here, the thickness may be the thickness in the direction from the first substrate 110 to the second substrate 160, and the area may be the area in the direction perpendicular to the direction from the first substrate 110 to the second substrate 160. Accordingly, the heat absorption performance or heat dissipation performance of the thermoelectric element can be enhanced. Preferably, the deposition, thickness, or area of the first substrate 110 may be formed larger than at least one of the deposition, thickness, or area of the second substrate 160. At this time, when the first substrate 110 is arranged in the high-temperature region due to the Seebeck effect, applied to the heat-generating region due to the Peltier effect, or when a sealing member for protecting from the external environment of the thermoelectric element is arranged on the first substrate 110, at least one of the volume, thickness, or area can be made larger than that of the second substrate 160. At this time, the area of the first substrate 110 can be formed in the range of 1.2 to 5 times the area ratio of the second substrate 160. When the area of the first substrate 110 is formed less than 1.2 times that of the second substrate 160, the influence on the improvement of the heat transfer efficiency is not high. When it exceeds 5 times, on the contrary, the heat transfer efficiency drops significantly, and it may be difficult to maintain the basic shape of the thermoelectric module.

[0105] Also, a heat dissipation pattern, for example, a concavo-convex pattern, may be formed on at least one surface of the first substrate 110 and the second substrate 160. Accordingly, the heat dissipation performance of the thermoelectric element can be enhanced. When the concavo-convex pattern is formed on the surface in contact with the P-type semiconductor element 130 or the N-type semiconductor element 140, the bonding characteristics between the semiconductor element and the substrate can also be improved.

[0106] Although not shown, a sealing member may be further disposed between the first substrate 110 and the second substrate 160. The sealing member may be disposed on the side surfaces of the first electrode portion 120, the P-type semiconductor element 130, the N-type semiconductor element 140, and the second electrode portion 150 between the first substrate 110 and the second substrate 160. Accordingly, the first electrode portion 120, the P-type semiconductor element 130, the N-type semiconductor element 140, and the second electrode portion 150 may be sealed from external moisture, heat, contamination, etc.

[0107] Referring back to FIGS. 1-2, a thermoelectric module 1200 may be disposed on each of the first surface 1110 and the second surface 1120 of the fluid flow portion 1100.

[0108] As described above, each thermoelectric element includes a first substrate 110 disposed to contact the fluid flow portion 1100, a first electrode portion 120 disposed on the first substrate 110, a plurality of semiconductor elements 130, 140 disposed on the first electrode portion 120, a second electrode portion 150 disposed on the plurality of semiconductor elements 130, 140, and a second substrate 160 disposed on the second electrode portion 150, and a heat sink 1220 is disposed on the second substrate 160. At this time, the first substrate of the thermoelectric element disposed on the fluid flow portion 1100 may be a metal substrate, and the metal substrate may be adhered to the surface of the fluid flow portion 1100 by a thermal interface material (TIM, not shown). Since the metal substrate has excellent heat transfer performance, heat transfer between the thermoelectric element and the fluid flow portion 1100 is easy. Also, when the metal substrate and the fluid flow portion 1100 are adhered by a thermal interface material (TIM), heat transfer between the metal substrate and the fluid flow portion 1100 can be prevented from being obstructed. Here, the metal substrate may be one of a copper substrate, an aluminum substrate, and a copper-aluminum substrate, but is not limited thereto.

[0109] The thermoelectric module 1200 can include connectors for extracting the generated electricity to the outside or applying electricity for use as a Peltier. According to an embodiment of the present invention, an insulating member 900 can be disposed around the connectors to uniformly maintain the bonding force between the thermoelectric module 1200 and the fluid flow unit 1100 and protect the wiring W connected to the connectors.

[0110] And, according to an embodiment of the present invention, a shield member 1500 can be further disposed to prevent moisture or contaminants from penetrating inside the thermoelectric module 1200.

[0111] FIG. 5 is a perspective view of a fluid flow unit included in a thermoelectric device according to an embodiment of the present invention, FIG. 6 is a cross-sectional view of the fluid flow unit according to an embodiment of the present invention, and FIGS. 7 to 8 are partial enlarged views of a cross-section of the fluid flow unit according to an embodiment of the present invention.

[0112] Referring to Figs. 5 to 8, the fluid flow portion 1100 includes a flow path region 500 including a flow path 502 formed along a second direction perpendicular to a first direction from a first surface 1110 to a second surface 1120 of the fluid flow portion 1100, a fluid inflow region 510 disposed on one side of the flow path region 500 and including a first hole 512 formed along the second direction, and a fluid discharge region 520 disposed on the other side of the flow path region 500 and including a second hole 522 formed along the second direction. Here, the flow path region 500 includes a plurality of flow paths 502 parallel to each other along the second direction, the fluid inflow region 510 includes a plurality of first holes 512 parallel to each other along the second direction, the fluid discharge region 520 includes a plurality of second holes 522 parallel to each other along the second direction, and each flow path 502 can be disposed to correspond to each first hole 512 and each second hole 522. The first fluid flowing into the first hole 512 can be discharged into the second hole 522 after passing through the flow path 502 along the second direction. For this purpose, a connecting member (not shown) is disposed in the first hole 512, and the fluid flow portion 1100 can be connected to the outside through the connecting member. The connecting member has a shape of a hollow tube, a part of which can be inserted into the first hole 512, and the remaining part can protrude outside one side 1150 of the fluid flow portion 1100. The first fluid can be supplied from the outside through the connecting member, and after passing through the connecting member inserted into the first hole 512, it can be transmitted to the flow path 502. Similarly, a connecting member (not shown) is disposed in the second hole 522, and the fluid flow portion 1100 can be connected to the outside through the connecting member. The connecting member has a shape of a hollow tube, a part of which can be inserted into the second hole 522, and the remaining part can protrude outside the other side 1160 of the fluid flow portion 1100. The first fluid can be discharged to the outside through the connecting member inserted into the second hole 522 after passing through the flow path 502. The connecting member may be referred to as a connecting pipe. Thus, when the thermoelectric device according to an embodiment of the present invention is connected to an external configuration through the connecting member, the use of fastening members such as screws can be minimized.

[0113] According to an embodiment of the present invention, the cross-sectional area of each first hole 512 may be larger than the cross-sectional area of each flow path 502. Here, the cross-sectional area may be defined as the area of a cross-section perpendicular to the second direction in which the first fluid flows. According to this, with a connecting member inserted into the first hole 512, the cross-sectional area of the connecting member and the cross-sectional area of the flow path 502 may be 0.8 to 1.2 times, 0.85 to 1.15 times, 0.9 to 1.1 times, 0.95 to 1.05 times, 0.97 to 1.03 times, 0.99 to 1.01 times, and the flow resistance of the first fluid flowing along the second direction can be minimized.

[0114] Here, although the first hole 512 and the flow path 502 are shown as being matched one-to-one, and the flow path 502 and the second hole 522 are shown as being matched one-to-one, the present invention is not limited thereto. According to another embodiment of the present invention, the fluid passing through the plurality of first holes 512 may gather in one flow path, and the fluid passing through one flow path may be dispersed into the plurality of second holes 522.

[0115] According to an embodiment of the present invention, the fluid flow part 1100 further includes a first step part 530 disposed between the first hole 512 and the flow path 502. According to an embodiment of the present invention, the first step part 530 includes a first step surface 532 and a first chamfer surface 534 extending from the first step surface 532 so as to be inclined toward the flow path 502. Here, the first step surface 532 may be a surface parallel to the surface perpendicular to the second direction in which the first fluid flows. That is, the first step surface 532 may be a surface protruding from the wall surface of the first hole 512. The first step surface 532 can contact the end of a connecting member (not shown) inserted into the first hole 512, and accordingly, can function as a stopper for the connecting member. According to this, when assembling the connecting member with the fluid flow part 1100 according to the embodiment of the present invention, when the end of the connecting member contacts the first step surface 532, the connecting member stops without being further inserted into the fluid flow part 1100, so that the assembly is easy and the coupling force between the connecting member and the fluid flow part 1100 can be increased.

[0116] At this time, the height 532h of the first stepped surface 532 can be 1 mm or more from the wall surface of the first hole 512. The height 532h of the first stepped surface 532 can be equal to or less than the thickness of the connecting member having a hollow tube shape, for example, 0.5 to 1 times the thickness of the connecting member. According to this, while the first stepped surface 532 maintains the function of the stopper of the connecting member, the flow of the first fluid can be prevented from being obstructed by the first stepped surface 532. According to this, the vortex phenomenon of the first fluid caused by the first stepped surface 532 can be prevented.

[0117] According to an embodiment of the present invention, the first chamfered surface 534 is a surface that extends so as to be inclined from the first stepped surface 532 toward the flow path 502, and the first fluid discharged from the connecting member inserted into the first hole 512 can flow into the flow path 502 without flow path resistance by the first chamfered surface 534. The first chamfered surface 534 can form an angle (θ) of 5 degrees to 85 degrees, 10 degrees to 80 degrees, 15 degrees to 75 degrees, 20 degrees to 70 degrees, 25 degrees to 65 degrees, 30 degrees to 60 degrees, 35 degrees to 55 degrees, 40 degrees to 50 degrees, 40 degrees to 85 degrees, 45 degrees to 85 degrees, . According to this, the first fluid discharged from the connecting member can flow into the flow path 502 without a change in flow velocity.

[0118] At this time, the length 534L of the first chamfered surface 534 can be 3 times or more the height 532h of the first stepped surface 532. The length 534L of the first chamfered surface 534 can be 60% or more of the inner diameter of the connecting member. According to this, the first fluid can flow into the flow path 502 without flow path resistance by the first chamfered surface 534, and the thickness of the fluid flow portion 1100 in the first direction in the flow path region 500 can be made thinner.

[0119] Similarly, the fluid flow portion 1100 further includes a second step portion 540 disposed between the flow path 502 and the second hole 522. Here, although the first step portion 530 has been described as the center, the same structure can also be applied to the second step portion 540. The first step portion 530 and the second step portion 540 can be symmetric to each other. That is, the first step portion 540 can include a second step surface 542 disposed between the second hole 522 and the flow path 502 and a second chamfered surface 544 extending from the second step surface 542 so as to be inclined toward the flow path 502. According to this, a change in the flow velocity of the first fluid can be prevented in the fluid discharge region 520, and the first fluid can be discharged to the outside without flow path resistance.

[0120] On the other hand, as described above, the thermoelectric device 1000 according to the embodiment of the present invention is connected to an external configuration through a connecting member (not shown). One end of the connecting member is connected to the external configuration, and the other end of the connecting member is connected to the fluid flow portion 1100 according to the embodiment of the present invention. The other end of the connecting member can be inserted into the first hole 512 of the fluid flow portion 1100 according to the embodiment of the present invention and then fixed to the first hole 512.

[0121] For this purpose, according to the embodiment of the present invention, a first groove G1 having a predetermined depth is formed on the wall surface of the first hole 512. After inserting the other end of the connecting member into the first hole 512 and applying a force to the inner wall of the connecting member at a position corresponding to the first groove G1 to expand the diameter, the other end of the connecting member can be press-fitted into the first hole 512. According to this, the gap between the connecting member and the first groove G1 of the first hole 512 disappears, and airtightness can be ensured. According to this, since the thermoelectric device 1000 according to the embodiment of the present invention can be connected to an external configuration through a connecting member without a fastening member such as a screw, fastening force and durability can be ensured.

[0122] At this time, the first hole 512 is circular and the same as the connecting member, and the diameter of the first hole 512 can be designed to be larger than the diameter of the connecting member. For example, the diameter of the first hole 512 can be designed to be 0.2 to 0.4 mm larger than the diameter of the connecting member. According to this, the connecting member can be easily inserted into the first hole 512, and the airtightness and fastening property between the connecting member and the first hole 512 can be enhanced. For this reason, the connecting member can be made of a flexible material and can be bent to fit the shape of the first hole 512 after being inserted into the first hole 512.

[0123] According to an embodiment of the present invention, the distance 512L from one side of the fluid inflow region 510 to the first step portion 530 which is the other side of the fluid inflow region 510, that is, the distance that the first hole 512 extends along the second direction can be designed to be 40% or more and 70% or less of the entire length of the connecting member. According to this, the fastening force between the connecting member and the first hole 512 can be ensured, and the fastening operation can be easy.

[0124] According to an embodiment of the present invention, the first groove G1 formed in the first hole 512 can be formed in a continuous ring shape along the wall surface of the first hole 512. According to this, the fixing between the connecting member and the first groove G1 can be easy.

[0125] Or according to an embodiment of the present invention, the first groove G1 formed in the first hole 512 may be formed in a discontinuous ring shape along the wall surface of the first hole 512.

[0126] Or according to an embodiment of the present invention, the length of the first groove G1 can be more than 20%, more than 30%, more than 40%, more than 50%, more than 60%, more than 70%, more than 80%, more than 90% of the circumference of the wall surface of the first hole 512. Here, the length of the first groove G1 can be the distance that the first groove G1 extends along the wall surface of the first hole 512. For example, the length of the first groove G1 can be 1.5 mm to 4 mm. According to this, all of the fastening force and airtightness between the first groove G1 and the connecting member can be ensured.

[0127] According to an embodiment of the present invention, the first groove G1 may be formed in a spiral shape along the wall surface of the first hole 512. According to this, even when the thermoelectric device 1000 according to the embodiment of the present invention vibrates frequently, the possibility that the connecting member detaches from the thermoelectric device 1000 can be minimized.

[0128] Alternatively, according to an embodiment of the present invention, the first groove G1 may be formed to extend along the second direction from one side of the fluid inflow region 510, that is, the fluid inlet, to the other side of the fluid inflow region 510, that is, the first step portion 530.

[0129] According to an embodiment of the present invention, the depth G1D of the first groove G1 may be 20% or more and 50% or less of the thickness of the connecting member. Here, the depth G1D of the first groove G1 may be the vertical distance from the wall surface of the first hole 512 to the bottom surface of the first groove G1. When the depth of the first groove G1 satisfies such a numerical range, the fastening force and airtightness with the connecting member can be ensured simultaneously.

[0130] At this time, the length of the first groove G1 may be larger than the depth G1D of the first groove G1. For example, the length of the first groove G1 may be 2 times or more, 5 times or more, 10 times or more, 2 times to 20 times the depth G1D of the first groove G1. According to this, the operation for fixing the connecting member to the first hole 512 is easy, and the airtightness between the connecting member and the first hole 512 can be maintained.

[0131] According to an embodiment of the present invention, a second groove G2 spaced apart from the first groove G1 and having a predetermined depth may be further formed on the wall surface of the first hole 512. When two or more grooves are formed in the first hole 512, the fastening force can be further increased in a form like a hook while the connecting member fills the spaces of the first groove G1 and the second groove G2.

[0132] At this time, the first groove G1 and the second groove G2 are arranged in order along the second direction from one side of the fluid inflow region 510, that is, from the fluid inlet to the other side of the fluid inflow region 510, that is, the first step portion 530. At least one of the distance d1 from one side of the fluid inflow region 510 to the first groove G1 and the distance d2 from the second groove G2 to the first step portion 530 which is the other side of the fluid inflow region 510 can be equal to or greater than the distance d3 between the first groove G1 and the second groove G2. At this time, the distance between the first groove G1 and the second groove G2 can be 6 mm or more. According to this, the fastening force and airtightness between the connecting member and the first hole 512 can be ensured simultaneously.

[0133] For the sake of convenience of explanation, the description is centered on the groove formed in the first hole 512 of the fluid inflow region 510, but it is not limited thereto. Grooves can also be formed in the second hole 522 of the fluid discharge region 520 with the same or similar structure as the first hole 512.

[0134] Although not shown, a protrusion may be formed on the outer wall of the connecting member so as to engage with the groove of the first hole 512.

[0135] According to an embodiment of the present invention, the thickness of the fluid flow part 1100 in the first direction may be different in the flow path region 500, the fluid inlet region 510, and the fluid outlet region 520. According to an embodiment of the present invention, the thickness of the fluid flow part 1100 in the first direction may be different in the flow path region 500, the fluid inlet region 510, the fluid outlet region 520, the first step part 530, and the second step part 540. For example, the thickness in the first direction in the flow path region 500 may be thinner than the thickness in the first direction in the fluid inlet region 510 and the fluid outlet region 520. For example, the thickness in the first direction in the flow path region 500 may be thinner than the thickness in the first direction in the first step part 530 and the second step part 540, and may also be thinner than the thickness in the first direction in the first step part 530 and the second step part 540. It may be thinner than the thickness in the first direction in the fluid inlet region 510 and the fluid outlet region 520. When the first step part 530 and the second step part 540 include the first chamfer surface 534 and the second chamfer surface 544 respectively, the thickness of the flow path region 500 in the first direction may be implemented to be thinner than the thickness in the first direction in the fluid inlet region 510 and the fluid outlet region 520. Since the thermoelectric modules are arranged on both surfaces of the flow path region 500, the thinner the thickness of the flow path region 500 is implemented, the more the number of thermoelectric devices accommodated per unit volume can be increased, and the thermoelectric performance per unit volume can be improved.

[0136] According to an embodiment of the present invention, step surfaces 1142 and 1144 may be formed on the fluid inlet region 510 of the fluid flow part 1100 or on the fourth surface 1140 of the fluid inlet region 510 and the first step part 530. The step surfaces 1142 and 1144 are parallel to the fourth surface 1140, but can form a step with the fourth surface 1140 across the fourth surface 1140. The step surface 1142 can serve to guide the wiring connected to the thermoelectric module 1200 arranged on the first surface 1110 and the second surface 1120 of the fluid flow part 1100.

[0137] According to an embodiment of the present invention, protrusions 1112 may be disposed on the first surface 1110 and the second surface 1120 of the flow path region 500 of the fluid flow unit 1100. The protrusions 1112 may be a plurality of protrusions spaced apart from each other at a predetermined interval along the second direction on the side closer to the fourth surface 1140 among the third surface 1130 and the fourth surface 1140 of the fluid flow unit 1100. The protrusions 1112 may serve as a means for fixing the position of the thermoelectric module 1200 or the shield member 1500 described later.

[0138] According to an embodiment of the present invention, predetermined grooves 1114 may be formed on the first surface 1110 and the second surface 1120 of the flow path region 500 of the fluid flow unit 1100. The predetermined grooves 1114 may serve as a position guide for the thermoelectric module 1200 described later.

[0139] According to an embodiment of the present invention, the thermoelectric module 1200 is disposed on the first surface 1110 and the second surface 1120 of the fluid flow unit 1100. The fluid flow unit 1100 includes a flow path region 500, and a flow path inflow region 510 and a flow path discharge region 520 disposed on both sides of the flow path region 500. According to an embodiment of the present invention, the thermoelectric module 1200 is disposed in the flow path region 500.

[0140] FIG. 9 is a perspective view of a thermoelectric module according to an embodiment of the present invention, FIG. 10 is a plan view of a thermoelectric module according to an embodiment of the present invention, FIG. 11 is an exploded perspective view of a thermoelectric module according to an embodiment of the present invention, FIG. 12 is the shape of an electrode portion disposed on a lower substrate of a thermoelectric module according to an embodiment of the present invention, FIG. 13 is a plan view of a frame included in a thermoelectric module according to an embodiment of the present invention, FIG. 14 is a plan view of an insulating member included in a thermoelectric module according to an embodiment of the present invention, and FIG. 15 is a graph showing insulation resistance according to an insulation distance.

[0141] Referring to FIGS. 9 to 14, the thermoelectric module 1200 includes a first thermoelectric module 600 and a second thermoelectric module 700 disposed adjacent to the first thermoelectric module 600. According to an embodiment of the present invention, a plurality of thermoelectric modules 1200 may be disposed on the first surface 1110 and the second surface 1120 of the fluid flow portion 1100, respectively. The thermoelectric module 1200 includes a thermoelectric element and a heat sink, and redundant descriptions for the same content as that described with reference to FIGS. 3 to 4 are omitted.

[0142] According to an embodiment of the present invention, the first thermoelectric module 600 includes a first lower substrate 610, a plurality of semiconductor elements disposed on the first lower substrate 610, and a first upper substrate 620 disposed on the plurality of semiconductor elements. The second thermoelectric module 700 includes a second lower substrate 710, a plurality of semiconductor elements disposed on the second lower substrate 710, and a second upper substrate 720 disposed on the plurality of semiconductor elements. The first and second lower substrates 610 and 710 are the first substrate 110 described with reference to FIGS. 3 to 4. The plurality of semiconductor elements may be the P-type semiconductor elements 130 and N-type semiconductor elements 140 described with reference to FIGS. 3 to 4, and the first and second upper substrates 620 and 720 may be the second substrate 160 described with reference to FIGS. 3 to 4.

[0143] According to an embodiment of the present invention, the first and second lower substrates 610 and 710 are disposed on the first surface 1110 of the fluid flow portion  1100. At this time, the first and second lower substrates 610 and 710 may be disposed so as to be in direct contact with the first surface 1110 of the fluid flow portion 1100, or may be disposed so as to be in indirect contact through a thermal interface material (TIM) or the like.

[0144] According to an embodiment of the present invention, the first lower substrate 610 includes first to fourth outer contours 610S1 to 610S4, the second lower substrate 710 includes first to fourth outer contours 710S1 to 710S4, the first outer contour 610S1 and the second outer contour 610S2 of the first lower substrate 610 face each other, the third outer contour 610S3 and the fourth outer contour 610S4 of the first lower substrate 610 face each other, the first outer contour 710S1 and the second outer contour 710S2 of the second lower substrate 710 face each other, the third outer contour 710S3 and the fourth outer contour 710S4 of the second lower substrate 710 face each other, and the first outer contour 610S1 and the second outer contour 610S2 of the first lower substrate 610 and the first outer contour 710S1 and the second outer contour 710S2 of the second lower substrate 710 may be sequentially arranged along the second direction.

[0145] The plurality of semiconductor elements disposed on the first lower substrate 610 include a first-1 semiconductor element disposed in the first region 611 of the first lower substrate 610 and a first-2 semiconductor element disposed in the second region 612 of the first lower substrate 610. The plurality of semiconductor elements disposed on the second lower substrate 710 include a second-1 semiconductor element disposed in the third region 711 of the second lower substrate 710 and a second-2 semiconductor element disposed in the fourth region 712 of the second lower substrate 710. A first-1 electrode portion 631 is disposed between the first region 611 of the first lower substrate 610 and the first-1 semiconductor element, a first-2 electrode portion 632 is disposed between the second region 612 of the first lower substrate 610 and the first-2 semiconductor element, a second-1 electrode portion 731 is disposed between the third region 711 of the second lower substrate 710 and the second-1 semiconductor element, and a second-2 electrode portion 732 is disposed between the fourth region 714 of the second lower substrate 710 and the second-2 semiconductor element. The first-1 electrode portion 631 and the first-2 electrode portion 632 are connected by a connection electrode 633, and the second-1 electrode portion 731 and the second-2 electrode portion 732 are connected by a connection electrode 733.

[0146] The first upper substrate 620 includes a first-1 upper substrate 621 disposed on the first-1 semiconductor element and a first-2 upper substrate 622 disposed on the first-2 semiconductor element. The second upper substrate 720 includes a second-1 upper substrate 721 disposed on the second-1 semiconductor element and a second-2 upper substrate 722 disposed on the second-2 semiconductor element. A first-1 heat sink 641 is disposed on the first-1 upper substrate 621, a first-2 heat sink 642 is disposed on the first-2 upper substrate 622, a second-1 heat sink 741 is disposed on the second-1 upper substrate 721, and a second-2 heat sink 742 is disposed on the second-2 upper substrate 722.

[0147] According to an embodiment of the present invention, the length of the connecting electrodes 633 and 733 in the major axis direction can be 2 to 4 times the length of the electrodes included in the first-1 electrode portion 631, the first-2 electrode portion 632, the second-1 electrode portion 731, and the second-2 electrode portion 732 in the major axis direction. According to this, the distance between the first-1 heat sink 641 and the first-2 heat sink 642 and the distance between the second-1 heat sink 741 and the second-2 heat sink 742 can be ensured to be a predetermined distance or more, so that interference between the heat sinks can be prevented and the working efficiency can be improved.

[0148] A frame 800 can be further disposed on the first lower substrate 610 and the second lower substrate 710. The frame 800 can include an insulating material and can be disposed between the first-1 upper substrate 621, the first-2 upper substrate 622, the second-1 upper substrate 721, and the second-2 upper substrate 722. Accordingly, the frame 800 can separate the first-1 upper substrate 621, the first-2 upper substrate 622, the second-1 upper substrate 721, and the second-2 upper substrate 722.

[0149] According to an embodiment of the present invention, the first thermoelectric module 600 includes a first groove 650, and the second thermoelectric module 700 includes a second groove 750. According to an embodiment of the present invention, the first groove 650 is formed in the first lower substrate 610, and the second groove 750 is formed in the second lower substrate 710. The first groove 650 includes a first-1 groove 651 and a first-2 groove 652. The first-1 groove 651 is formed in a first outer contour 610S1 which is an outer contour of the first lower substrate 610, and the first-2 groove 652 may be formed in a second outer contour 610S2 which is another outer contour of the first lower substrate 610. The second groove 750 includes a second-1 groove 751 and a second-2 groove 752. The second-1 groove 751 is formed in a first outer contour 710S1 which is an outer contour of the second lower substrate 710, and the second-2 groove 752 may be formed in a second outer contour 710S2 which is another outer contour of the second lower substrate 710. At this time, a virtual line V connecting the center of the first-1 groove 651 and the center of the first-2 groove 652 may be disposed in a region that vertically overlaps a region between the first-1 upper substrate 621 and the first-2 upper substrate 622. A virtual line connecting the center of the second-1 groove 751 and the center of the second-2 groove 752 may be disposed in a region that vertically overlaps a region between the second-1 upper substrate 721 and the second-2 upper substrate 722. The first-1 groove 651 and the first-2 groove 652 may be arranged to overlap each other along a direction perpendicular to the direction in which a connection electrode 633 connecting the first-1 electrode portion 631 and the first-2 electrode portion 632 extends. The second-1 groove 751 and the second-2 groove 752 may be arranged to overlap each other along a direction perpendicular to the direction in which a connection electrode 733 connecting the second-1 electrode portion 731 and the second-2 electrode portion 732 extends.

[0150] At this time, the first-2 groove 652 and the second-1 groove 751 are disposed at corresponding positions, and the first-2 groove 652 and the second-1 groove 751 can form a hole h1. The hole h1 formed by the first-2 groove 652 and the second-1 groove 751 can be a hole for a fastening member (not shown) to pass through.

[0151] The frame 800 can include a hole h2 corresponding to the hole h1 formed by the first-second groove 652 and the second-first groove 751. A fastening member (not shown) can penetrate through the hole h2 and the hole h1. Accordingly, the first thermoelectric module 600 and the second thermoelectric module 700 according to an embodiment of the present invention can be simultaneously fixed by one fastening member. According to this, since it is not necessary to penetrate the fastening member within the effective region where the semiconductor element is disposed, the arrangement of the electrode portion and the semiconductor element is easy, and the thermoelectric performance per unit area can be improved. A plurality of first-second grooves 652 and a plurality of second-first grooves 751 are disposed at corresponding positions to each other, and the plurality of first-second grooves 652 and the plurality of second-first grooves 751 may form a plurality of holes h1.

[0152] At this time, the head portion of the fastening member (not shown) can be disposed on the upper part of the edge of the hole h2 of the frame 800. For this purpose, among the four corners of the first-1 upper substrate 621, the corner adjacent to the hole h2; among the four corners of the first-2 upper substrate 622, the corner adjacent to the hole h2; among the four corners of the second-1 upper substrate 721, the corner adjacent to the hole h2; and among the four corners of the second-2 upper substrate 722, the corner adjacent to the hole h2 can each include first to fourth cutting portions 621C, 622C, 721C, 722C. Here, the cutting portion may mean a chamfered shape. According to an embodiment of the present invention, since the frame 800 is disposed between the first-1 upper substrate 621, the first-2 upper substrate 622, the second-1 upper substrate 721, and the second-2 upper substrate 722, it can include first to fourth openings 810, 820, 830, 840 surrounding the first-1 upper substrate 621, the first-2 upper substrate 622, the second-1 upper substrate 721, and the second-2 upper substrate 722, respectively. The first to fourth openings 810, 820, 830, 840 of the frame 800 can have a shape corresponding to the outer contour of the first-1 upper substrate 621, the first-2 upper substrate 622, the second-1 upper substrate 721, and the second-2 upper substrate 722, respectively. That is, among the four corners of each of the first to fourth openings 810, 820, 830, 840 of the frame 800, the corner adjacent to the hole h2 can have a shape corresponding to the first to fourth cutting portions 621C, 622C, 721C, 722C of the first-1 upper substrate 621, the first-2 upper substrate 622, the second-1 upper substrate 721, and the second-2 upper substrate 722.

[0153] Although not shown, as described with reference to FIGS. 3 to 4, a first insulating layer can be disposed between the first lower substrate 610 and the plurality of semiconductor elements, and a second insulating layer can be disposed between the plurality of semiconductor elements and the first upper substrate 620. A third insulating layer may be further disposed between the first insulating layer and the plurality of semiconductor elements.

[0154] As described above, a first - 1 electrode portion 631 and a first - 2 electrode portion 632 may be disposed between the first lower substrate 610 and the plurality of semiconductor elements, and a second - 1 electrode portion 731 and a second - 2 electrode portion 632 may be disposed between the second lower substrate 710 and the plurality of semiconductor elements.

[0155] And, an extension electrode 634 extending toward the fourth outer contour 610S4 of the first lower substrate 610 may be further disposed on the first lower substrate 610. In an embodiment of the present invention, the second fluid can flow in a direction from the fourth outer contour 610S4 toward the third outer contour 610S3. That is, the extension electrode 634 may be disposed in the direction in which the second fluid flows in. The area of the extension electrode 634 may be larger than the area of each electrode forming the first - 1 electrode portion 631 and the first - 2 electrode portion 632. A connector may be disposed on the extension electrode 634, and a wiring may be connected to the connector.

[0156] According to an embodiment of the present invention, an insulating member 900 is further disposed on the extension electrode 634. Although one insulating member 900 is shown as being disposed on the first thermoelectric module 600 and the second thermoelectric module 700, the embodiments of the present invention are not limited thereto, and each insulating member may be disposed on each thermoelectric module. The insulating member 900 can uniformly maintain the bonding force between the first and second thermoelectric modules 600, 700 and the fluid flow portion 1100, and can protect the wiring connected to the connector.

[0157] According to an embodiment of the present invention, the insulating member 900 includes an insulating frame 920 in which an opening 910 is formed. The opening 910 may be disposed at a position corresponding to the extension electrode 634, and the opening 910 may be filled with resin. Accordingly, resin may be disposed on the extension electrode 634 to be insulated, and the withstand voltage performance of the first and second thermoelectric modules 600 and 700 can be enhanced. Here, the resin may include an epoxy resin or a silicone resin. When the insulating frame 920 includes a plastic material, the insulating frame 920 can be easily molded into various sizes and shapes. For example, the insulating frame 920 may be a plastic material applicable at high temperatures, such as PPS (polyphenylene sulfide). According to this, it is possible to prevent the problem that the shape of the insulating frame 920 is deformed by the second fluid at a high temperature.

[0158] According to an embodiment of the present invention, a through hole 930 may be formed between the openings 910 of the insulating frame 920, and a fastening member may be fastened to the through hole 930.

[0159] According to an embodiment of the present invention, the insulating member 900 may be disposed with respect to the first thermoelectric module 600 and the second thermoelectric module 700, respectively, and one insulating member 900 may be disposed on the first thermoelectric module 600 and the second thermoelectric module 700.

[0160] According to an embodiment of the present invention, first-third grooves 653 and second-third grooves 753 may be further disposed on the fourth outer shell 610S4 of the first lower substrate 610 and the fourth outer shell 710S4 of the second lower substrate 710, respectively, and grooves 940 corresponding to the first-third grooves 653 and the second-third grooves 753 may be further disposed on the insulating member 900. The first-third grooves 653 and the second-third grooves 753 respectively disposed on the fourth outer shell 610S4 of the first lower substrate 610 and the fourth outer shell 710S4 of the second lower substrate 710 and the grooves 940 disposed on the insulating member 900 may serve as position alignment means, and these grooves can mesh with the protrusion 1112 of the fluid flow unit 1100 to be position-aligned.

[0161] Referring to FIG. 15, in order to obtain an insulation resistance of 500 MΩ or more, an insulation distance of 12 mm or more must be ensured. In this specification, the insulation distance may mean the shortest insulation distance from the effective area where the semiconductor element is arranged to the outer contour of the substrate. When the insulation frame 920 is arranged on the extension electrode 634 as in the embodiment of the present invention, the insulation distance can be increased by the height of the insulation frame 920, and accordingly, a higher insulation resistance can be obtained. For example, the shortest insulation distance can be defined by (2 * height of the insulation frame + length of the insulation frame). Here, the height of the insulation frame is defined as the height along the first direction with respect to the lower substrate, and the length of the insulation frame can be defined as the length along the third direction.

[0162] According to an embodiment of the present invention, the ratio of the distance from the extension electrode 634 to the fourth outer contour 610S4 of the first lower substrate 610 to the distance from the fourth outer contour 610S4 of the first lower substrate 610 to the nearest semiconductor element among the plurality of semiconductor elements can be 1.5 times or more and 3.5 times or less. According to an embodiment of the present invention, the ratio of the distance from the extension electrode 634 to the fourth outer contour 610S4 of the first lower substrate 610 to the height of the insulation frame 920 can be 0.25 times or more and 0.7 times or less. For example, the distance from the fourth outer contour 610S4 of the first lower substrate 610 to the nearest semiconductor element among the plurality of semiconductor elements is 9 mm to 21 mm, the distance from the extension electrode 634 to the fourth outer contour 610S4 of the first lower substrate 610 is 3 mm to 14 mm, and the height of the insulation frame 920 can be 1.5 mm to 4 mm. That is, even when the distance from the extension electrode 634 to the fourth outer contour 610S4 of the first lower substrate 610 is 3 mm, an insulation distance of 12 mm can be ensured by the insulation frame 920. According to this, not only can a high insulation resistance be satisfied, but also the area of the effective region where the semiconductor element is arranged to obtain thermoelectric performance can be maximized, and the insulation frame 920 can prevent the flow path of the second fluid passing through the heat sink.

[0163] As described above, according to an embodiment of the present invention, the frame 800 may be arranged to surround the first to fourth upper substrates. Since the frame 800 contains an insulating material, the insulating distance of the thermoelectric module may be further increased by the frame 800.

[0164] Here, although the thermoelectric module 1200 is described as including the first thermoelectric module 600 and the second thermoelectric module 700, and the first and second thermoelectric modules 600 and 700 each include the first and second lower substrates 610 and 710, it is not limited thereto. According to another embodiment of the present invention, the first and second lower substrates 610 and 710 may be embodied as one lower substrate, the first to fourth upper substrates 621, 622, 721, and 722 may be arranged on one lower substrate, and holes may be formed in the frame 800 and the lower substrate so as to correspond to the separation regions between the first to fourth upper substrates 621, 622, 721, and 722.

[0165] On the other hand, referring to FIGS. 1 to 2, a shield member 1500 may be further arranged to prevent moisture or contaminants from penetrating into the thermoelectric module 1200. As described above, the fluid flow unit 1100 includes a first surface 1110 and a second surface 1120 spaced apart from the first surface 1110 in a first direction, and the thermoelectric module 1200 is arranged on the first surface 1110 and the second surface 1120 of the fluid flow unit 1100, respectively. The first fluid flows through between the first surface 1110 and the second surface 1120 of the fluid flow unit 1100 along a second direction perpendicular to the first direction, and the second fluid, which is at a higher temperature than the first fluid, flows along the heat sink 1220 of the thermoelectric module 1200 along a third direction perpendicular to the first direction and the second direction. Here, the third direction may be a direction from the fourth surface 1140 to the third surface 1130 of the fluid flow unit 1100.

[0166] FIGS. 16 to 23 are drawings showing a process of assembling a shield member to a thermoelectric device according to an embodiment of the present invention, FIG. 24 is a cross-sectional view of the thermoelectric device according to an embodiment of the present invention in a state where the shield member is assembled, and FIG. 25 is a perspective view of the thermoelectric device according to an embodiment of the present invention with the third shield member removed.

[0167] Referring to FIGS. 16 and 17, with the thermoelectric modules 1200 assembled on the first surface 1110 and the second surface 1120 of the fluid flow portion 1100 respectively, a first shield member 1510 is disposed on the third surface 1130 of the fluid flow portion 1100.

[0168] Although the first shield member 1510 is disposed on the third surface 1130 of the fluid flow portion 1100, it can be extended to cover a part of the first surface 1110 and the second surface 1120 of the fluid flow portion 1100. For example, the cross-section of the first shield member 1510 can be in the shape of "⊂". According to this, the first shield member 1510 can protect not only the third surface 1130 of the fluid flow portion 1100, but also the boundary between the first surface 1110 and the third surface 1130 and the boundary between the second surface 1120 and the third surface 1130.

[0169] At this time, a first heat insulation member 1610 can be further disposed between the fluid flow portion 1100 and the first shield member 1510. According to this, even if a high-temperature second fluid flows on the surface of the first shield member 1510, the influence on the first fluid in the fluid flow portion 1100 can be minimized. A fastening hole 1512 is formed in the first shield member 1510, and it can be fastened to the third surface 1130 of the fluid flow portion 1100 through this. Therefore, the first heat insulation member 1610 can be disposed between the fastening holes 1512.

[0170] Next, referring to FIGS. 18 and 19, with the thermoelectric modules 1200 assembled on the first surface 1110 and the second surface 1120 of the fluid flow section 1100 respectively, and the first shield member 1510 assembled on the third surface 1130 of the fluid flow section 1100, a second shield member 1520 is disposed on the first surface 1110 of the fluid flow section 1100 and the thermoelectric module 1200. At this time, the second shield member 1520 can be extended to the third surface 1130 of the fluid flow section 1100 so as to cover a part of the first shield member 1510 disposed on the third surface 1130 of the fluid flow section 1100. At the same time, a fourth shield member 1540 symmetric to the second shield member 1520 can also be disposed on the second surface 1120 of the fluid flow section 1100 and the thermoelectric module 1200, and the fourth shield member 1540 can be extended to the third surface 1130 of the fluid flow section 1100 so as to cover a part of the first shield member 1510 disposed on the third surface 1130 of the fluid flow section 1100. According to this, since the gaps between the first shield member 1510 and the second shield member 1520 and between the first shield member 1510 and the fourth shield member 1540 are not directly disposed in the flowing direction of the second fluid, the problem that the second fluid flows between the gaps between the first shield member 1510 and the second shield member 1520 and between the first shield member 1510 and the fourth shield member 1540 can be prevented.

[0171] On the other hand, the second shield member 1520 and the fourth shield member 1540 each include grooves 1522 and 1542 that are disposed corresponding to each other. The grooves 1522 and 1542 are disposed on the third surface 1130 and can be disposed corresponding to the fastening holes 1512 of the first shield member 1510. Accordingly, a fastening member (not shown) can penetrate through the holes formed by the grooves 1522 and 1542 of the second shield member 1520 and the fourth shield member 1540 and the fastening holes 1512 of the first shield member 1510 and be fixed to the third surface 1130 of the fluid flow section 1100.

[0172] As described above, the thermoelectric module 1200 includes a thermoelectric element disposed on the fluid flow portion 1100 and a heat sink disposed on the thermoelectric element, and the thermoelectric module 1200 can include a first thermoelectric module 600 and a second thermoelectric module 700 disposed adjacent to the first thermoelectric module 600.

[0173] According to an embodiment of the present invention, the second shield member 1520 includes a through hole 1524 through which the heat sink is exposed, and the edge of the through hole 1524 can be disposed on the upper substrate of the first thermoelectric module 600 and the second thermoelectric module 700. According to this, the high-temperature second fluid can flow along the third direction through the heat sink.

[0174] Next, referring to FIGS. 20 and 21, the thermoelectric module 1200 is assembled on the first surface 1110 and the second surface 1120 of the fluid flow portion 1100, the first shield member 1510 is assembled on the third surface 1130 of the fluid flow portion 1100, and the second shield member 1520 and the fourth shield member 1540 are assembled on the first surface 1110 and the second surface 1120 of the fluid flow portion 1100. In this state, the third shield member 1530 is disposed on the fourth surface 1140 of the fluid flow portion 1100.

[0175] Although the third shield member 1530 is disposed on the fourth surface 1140 of the fluid flow section 1100, it may extend to a part of the first surface 1110 and the second surface 1120 of the fluid flow section 1100. For example, the cross-section of the third shield member 1530 may be in the shape of "⊂". According to this, the third shield member 1530 can protect not only the fourth surface 1140 of the fluid flow section 1100, but also the boundary between the first surface 1110 and the fourth surface 1140 and the boundary between the second surface 1120 and the fourth surface 1140. Also, in a structure where the second fluid flows from the fourth surface 1140 to the third surface 1130 on the first surface 1110 and the second surface 1120 of the fluid flow section 1100, when the third shield member 1530 is disposed on the second and fourth shield members 1520, 1540, the gap between the second and fourth shield members 1520, 1540 and the third shield member 1530 is not directly exposed along the direction in which the second fluid flows. Therefore, the problem of the second fluid seeping between the second and fourth shield members 1520, 1540 and the third shield member 1530 can be minimized.

[0176] At this time, a second heat insulating member 1620 may be further disposed between the fluid flow section 1100 and the third shield member 1530. According to this, even if the high-temperature second fluid flows on the surface of the third shield member 1530, the influence on the first fluid in the fluid flow section 1100 can be minimized. In order to minimize the influence of the high-temperature second fluid on the first fluid in the fluid flow section 1100, the second heat insulating member 1620 disposed between the fluid flow section 1100 and the third shield member 1530 may also extend to a part of the first surface 1110 and the second surface 1120 of the fluid flow section 1100. Although not shown, fastening holes may be formed in the third shield member 1530, and it may be fastened to the fourth surface 1140 of the fluid flow section 1100 through these.

[0177] According to an embodiment of the present invention, a sealing member 1532 may be applied to the boundary between the third shield member 1530 and the second shield member 1520 and the boundary between the third shield member 1530 and the fourth shield member 1540. According to this, the problem that the high-temperature second fluid penetrates the boundary between the third shield member 1530 and the second shield member 1520 and the boundary between the third shield member 1530 and the fourth shield member 1540 can be prevented.

[0178] On the other hand, as described with reference to FIGS. 5 to 8, the fluid flow portion 1100 includes a flow path region 500, a fluid inlet region 510, and a fluid discharge region 520. The thermoelectric module 1200 and the first to fourth shield members 1510, 1520, 1530, 1540 are all disposed on the flow path region 500.

[0179] Referring to FIGS. 22 to 23, with the thermoelectric module 1200 and the first to fourth shield members 1510, 1520, 1530, 1540 all disposed on the fluid flow portion 1100, a fifth shield member 1550 is further disposed on the fluid inlet region 510, and a sixth shield member 1560 is further disposed on the fluid discharge region 520. At this time, the fifth shield member 1550 and the sixth shield member 1560 may be extended so as to cover a part of the third surface 1130 and the fourth surface 1140 of the fluid flow portion 1100, respectively. And a third heat insulating member 1630 and a fourth heat insulating member 1640 may be further disposed between the fluid inlet region 510 and the fifth shield member 1550 and between the fluid discharge region 520 and the sixth shield member 1560, respectively.

[0180] On the other hand, as described with reference to FIGS. 9 to 13, the extension electrode of the thermoelectric module extends in the direction in which the second fluid flows in, a connector is disposed on the extension electrode, and a wiring may be connected to the connector.

[0181] That is, when the second fluid flows from the fourth surface 1140 to the third surface 1130 of the fluid flow portion 1100, the extension electrode, the connector, and the wiring can be disposed on the fourth surface 1140 side of the fluid flow portion 1100. Accordingly, according to an embodiment of the present invention, the fifth shield member 1550 can include a groove 1552 disposed on the fourth surface 1140, and the wiring can be drawn out to the outside through the groove 1552.

[0182] Referring to FIG. 24, the second fluid flows along the third direction. That is, the third shield member 1530 is disposed on the second shield member 1520, and the second shield member 1520 is disposed on the first shield member 1510, and the second fluid sequentially flows along the third shield member 1530, the second shield member 1520, and the first shield member 1510. According to this, the second fluid can pass along the third direction without being immersed between the third shield member 1530 and the second shield member 1520 and between the second shield member 1520 and the first shield member 1510).

[0183] Referring to FIG. 25, according to the structure according to an embodiment of the present invention, only the third shield member 1530 can be removed from the thermoelectric device 1000, and accordingly, the extension electrode, the connector, the wiring, etc. can be exposed. When a failure occurs in the extension electrode, the connector, and the wiring, it is possible to repair only by removing the third shield member 1530 without disassembling or replacing the entire thermoelectric device 1000.

[0184] According to an embodiment of the present invention, a plurality of thermoelectric devices may form a thermoelectric system.

[0185] FIG. 26 is a thermoelectric system according to an embodiment of the present invention, FIGS. 27 to 29 are drawings showing a process of assembling a wiring protection portion to the thermoelectric system according to an embodiment of the present invention, and FIG. 30 is a perspective view of an upper structure included in the thermoelectric system according to an embodiment of the present invention.

[0186] Referring to FIGS. 26 to 29, the thermoelectric system 2500 includes a first thermoelectric device 1000-1, a second thermoelectric device 1000-2 disposed at a distance from the first thermoelectric device 1000-1 along a first direction, a third thermoelectric device 1000-3 disposed at a distance from the second thermoelectric device 1000-2 along the first direction, a wiring portion W electrically connected to the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3, and a wiring protection portion 1700 disposed on an upper side of one side of the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3 so as to surround at least a part of the wiring portion W.

[0187] The first fluid flows through the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-1 respectively along a second direction perpendicular to the first direction, and the second fluid, which is at a higher temperature than the first fluid, can flow between the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3 along a third direction perpendicular to the first direction and the second direction.

[0188] The first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3 can each be a thermoelectric device described with reference to FIGS. 1 to 25.

[0189] As described above, the wiring W connected to the thermoelectric module included in each thermoelectric device is drawn out to the upper end of the fluid inflow region 510 of the fluid flow portion 1100, that is, the fourth surface 1140 of the fluid inflow region 510 of the fluid flow portion 1100.

[0190] According to an embodiment of the present invention, the wiring protection portion 1700 is disposed on an upper side of one side of a plurality of thermoelectric devices disposed at a distance from each other along the first direction, for example, the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3. Here, one side means the fluid inflow region 510 of the fluid flow portion 1100, and the upper side means the surface disposed in the direction in which the second fluid flows, that is, the fourth surface 1140 of the fluid flow portion 1100 when the second fluid flows from the fourth surface 1140 to the third surface 1130 of the fluid flow portion 1100 in the third direction.

[0191] The wiring protection part 1700 serves to collect the wirings drawn from a plurality of thermoelectric devices and guide them to the outside. When the wiring protection part 1700 is arranged at the upper part on one side of the fluid flow part 1100, that is, in the fluid inflow region 510, since it does not obstruct the flow of the second fluid passing through the thermoelectric module 1200 arranged in the flow path region 520, the thermoelectric performance can be enhanced. Further, since the temperature of the fluid inflow region 510 is lower than that of the fluid discharge region 520, the temperature of the wiring passing through the wiring protection part 1700 can be maintained in a lower state.

[0192] Referring to FIGS. 26 to 27, the wiring protection part 1700 includes a bottom part 1710 disposed on a plurality of thermoelectric devices 1000-1, ..., 1000-3, a first side wall 1720 extending upward from the first end 1711 of the bottom part 1710, a second side wall 1730 extending upward from the second end 1712 spaced apart from the first end 1711 of the bottom part 1710 along the first direction, a third side wall 1740 disposed between the first side wall 1720 and the second side wall 1730 and extending upward from the third end 1713 between the first end 1711 and the second end 1712 of the bottom part 1710, a fourth side wall 1742 disposed between the first side wall 1720 and the second side wall 1730 and extending upward from the fourth end 1714 spaced apart from the third end 1713 of the bottom part 1710 along the second direction, a first top part 1780 extending in the second direction from the third side wall 1740 and spaced apart from the bottom part 1710, a second top part 1790 extending in the direction opposite to the second direction from the fourth side wall 1742 and spaced apart from the bottom part 1710, and fifth side walls 1770, 1772 extending upward from the second top part 1790 and connected to the first top part 1780. As shown, the first end 1711 and the second end 1712 each extend along the second direction, and the first end 1711 and the second end 1712 may be arranged to be spaced apart from each other along the first direction. The third end 1713 and the fourth end 1714 each extend along the first direction, and the third end 1713 and the fourth end 1714 may be arranged to be spaced apart from each other along the second direction. At this time, the height of the first top part 1780 may be higher than the height of the second top part 1790 with respect to the bottom part 1710.

[0193] According to an embodiment of the present invention, the distance between the third side wall 1740 and the fifth side walls 1771 and 1772 gradually decreases along the upward direction of the bottom 1710. For example, when the third side wall 1740 is arranged substantially perpendicular to the bottom 1710, the fifth side walls 1770 and 1772 may be inclined so as to approach the third side wall 1740 as they move away from the bottom 1710 in the upward direction. For example, the angle in the second direction between the third side wall 1740 and the fifth side walls 1771 and 1772 may be arranged to be 10 to 70 degrees, preferably 15 to 60 degrees, more preferably 20 to 50 degrees, and even more preferably 25 to 40 degrees. According to this, as will be described later, the second fluid can flow into the space between the first to third thermoelectric devices 1000-1, 1000-2, and 1000-3 without flow path resistance or loss.

[0194] In an embodiment of the present invention, the third side wall 1740 and the fourth side wall 1742 are arranged parallel to each other, and accordingly, the distance between the third side wall 1740 and the fourth side wall 1742 may be the same along the upward direction of the bottom 1710.

[0195] Alternatively, although not shown, in another embodiment of the present invention, the distance between the third side wall 1740 and the fourth side wall 1742 may gradually decrease along the upward direction of the bottom 1710. At this time, the fourth side wall 1742 may be arranged parallel to the fifth side walls 1770 and 1772. That is, the angle in the second direction between the third side wall 1740 and the fifth side walls 1771 and 1772 may be the same as the angle in the second direction between the third side wall 1740 and the fourth side wall 1742. Alternatively, that is, the angle in the second direction between the third side wall 1740 and the fifth side walls 1771 and 1772 may be smaller than the angle in the second direction between the third side wall 1740 and the fourth side wall 1742. According to this, the second fluid can flow into the space between the first to third thermoelectric devices 1000-1, 1000-2, and 1000-3 without flow path resistance or loss.

[0196] According to an embodiment of the present invention, the wiring protection unit 1700 includes a first hole 1750, a second hole 1752, a third hole 1754 formed to be spaced apart from the bottom 1710 in a first direction, and a fourth hole 1756 disposed on the third sidewall 1740. At this time, the third sidewall 1740 can be disposed on the side relatively far from the flow path region 520, that is, the fluid inlet side of the first fluid, that is, the third end 1713 side, of both sides of the bottom 1710 spaced apart along the second direction.

[0197] The first wiring W1 connected to the first thermoelectric device 1000-1 penetrates the first hole 1750, extends upward along the third sidewall 1740, and is drawn out to the outside through the fourth hole 1756. The second wiring W2 connected to the second thermoelectric device 1000-2 penetrates the second hole 1752, extends upward along the third sidewall 1740, and is drawn out to the outside through the fourth hole 1756. The third wiring W3 connected to the third thermoelectric device 1000-3 penetrates the third hole 1754, extends upward along the third sidewall 1740, and is drawn out to the outside through the fourth hole 1756.

[0198] In this way, when the wiring protection unit 1700 collects the wirings connected to a plurality of thermoelectric devices and draws them out to the outside, the connection and work of the wirings are easy, and it is easy to protect the wirings from the high-temperature second fluid.

[0199] At this time, the first hole 1750, the second hole 1752, and the third hole 1754 can be formed at the boundary between the bottom 1710 and the third sidewall 1740 of the wiring protection unit 1700. According to this, the first to third wirings W1, W2, W3 that have passed through the first hole 1750, the second hole 1752, and the third hole 1754 extend upward along the third sidewall 1740 in a state of being in contact with the third sidewall 1740, and then can be drawn out to the outside through the fourth hole 1756. Since the third sidewall 1740 is disposed on the fluid inlet side, when the first to third wirings W1, W2, W3 come into contact with the third sidewall 1740, the temperatures of the first to third wirings W1, W2, W3 can be maintained at a lower state.

[0200] Referring to FIGS. 27 to 28, according to an embodiment of the present invention, the wiring protection part 1700 may further include a heat insulating member 1760. The heat insulating member 1760 may be disposed on the bottom 1710 between the first side wall 1720 and the second side wall 1730. At this time, the heat insulating member 1760 may be disposed to contact the first wiring to the third wiring W1, W2, W3 extending along the third side wall 1740. According to this, even if the high-temperature second fluid passes through the surface of the wiring protection part 1700, the problem that heat is applied to the first wiring to the third wiring W1, W2, W3 by the heat insulating member 1760 can be prevented. At this time, the heat insulating member 1760 may include a first heat insulating member disposed between the bottom 1710 and the first top part 1780 and a second heat insulating member disposed between the bottom 1710 and the second top part 1790.

[0201] At this time, the space between the first side wall 1720 and the second side wall 1730 and the heat insulating member 1760 may be sealed by a sealing member 770. Along with this, the problem that the heat of the second fluid is applied to the first wiring to the third wiring W1, W2, W3 through the gap between the first side wall 1720 and the second side wall 1730 and the heat insulating member 1760 can be prevented.

[0202] Referring to FIG. 29, the wiring protection part 1700 is disposed between the first side wall 1720 and the second side wall 1730, and further includes a shield cover part 780 covering at least a part of the first top part 1780, the second top part 1790, and the fifth side walls 1770, 1772. For this purpose, at least one fastening hole 1782, 1784, 1792, 1794 is formed in each of the first top part 1780 and the second top part 1790, and the shield cover part 780 can be fastened using a fastening member through at least one fastening hole 1782, 1784, 1792, 1794.

[0203] Referring again to FIG. 26, the thermoelectric system 2500 can further include an upper structure 1800 that is spaced apart from the wiring protection portion 1700 along the second direction and disposed on the other upper sides of the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3. Here, the other sides of the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3 may mean the fluid discharge port side of the first fluid.

[0204] Referring to FIG. 30, the external shape of the upper structure 1800 may be the same as the external shape of the wiring protection portion 1700 and may be arranged symmetrically with the wiring protection portion 1700. For example, the upper structure 1800 can include a heat insulating material and can be formed into an external shape that is symmetric with the wiring protection portion 1700. Alternatively, the upper structure 1800 may have the same material and structure as the wiring protection portion 1700. For example, the upper structure 1800 can also include a bottom, a first side wall 1820, a second side wall 1830, a third side wall, a fourth side wall 1844, a first top portion 1880, a second top portion 1890, and a fifth side wall 1870 in a shape that is symmetric with the wiring protection portion 1700. For example, the upper structure 1800 can have the same shape as the shape in which the heat insulating member 1760 fills the wiring protection portion 1700. Although not shown, a shield cover portion is disposed on at least a part of the first top portion 1880, the second top portion 1890, and the fifth side wall 1870 of the upper structure 1800, and the shield cover portion can be fastened to the upper structure 1800 through fastening holes 1882, 1884, 1892, 1894 formed in the first top portion 1880 and the second top portion 1890. According to this, the weights on both sides of the thermoelectric system 2500 can be balanced. The upper structure 1800 can be disposed on the fluid discharge region 520 of the fluid flow portion 1100 of the first thermoelectric device 1000-1, the second thermoelectric device 1000-2, and the third thermoelectric device 1000-3. Along with this, the wiring protection portion 1700 and the upper structure 1800 can also serve to guide the flow of the second fluid.

[0205] For this purpose, the shield cover portion 780 of the wiring protection portion 1700 may include a first inclined surface 782, and the upper structure 1800 may include a second inclined surface corresponding to the first inclined surface 782. The first inclined surface 782 may be arranged along the fifth side walls 1770, 1772 of the wiring protection portion 1700. The second inclined surface may be the fifth side wall 1870 of the upper structure 1800 or may mean a surface arranged along the fifth side wall 1870 among the shield cover portions of the upper structure 1800.

[0206] As shown in FIG. 26, according to an embodiment of the present invention, the distance D between the first inclined surface 782 and the second inclined surface may gradually become narrower along the direction in which the second fluid flows. According to this, the second fluid flowing into the thermoelectric system 2500 can gather in the central region where the thermoelectric module 1200 is arranged and then pass along the third direction.

[0207] On the other hand, according to another embodiment of the present invention, the thermoelectric systems may be arranged in multiple stages.

[0208] FIG. 31 is a perspective view of a thermoelectric system according to another embodiment of the present invention, FIGS. 32 to 33 are drawings showing the process of assembling a wiring protection portion to the thermoelectric system according to another embodiment of the present invention, and FIG. 34 is a perspective view of an upper structure included in the thermoelectric system according to another embodiment of the present invention.

[0209] Referring to FIGS. 31 to 33, the thermoelectric system 3000 includes a first thermoelectric system 3100 and a second thermoelectric system 3200 arranged below the first thermoelectric system 3100 along the third direction in which the second fluid flows, and each thermoelectric system includes a plurality of thermoelectric devices arranged to be spaced apart in the first direction.

[0210] Regarding each of the plurality of thermoelectric devices included in the first thermoelectric system 3100 and the second thermoelectric system 3200 respectively, the content described with reference to FIGS. 1 to 25 may be applied.

[0211] For the first thermoelectric system 3100 and the second thermoelectric system 3200 respectively, redundant descriptions for the same content as that described through FIGS. 26 to 30 are omitted.

[0212] According to an embodiment of the present invention, the external shapes of the wiring protection part and the upper structure included in the first thermoelectric system 3100 may be different from the external shapes of the wiring protection part and the upper structure included in the second thermoelectric system 3200.

[0213] In the thermoelectric system closest to the inlet of the second fluid, for example, in the first thermoelectric system 3100 of FIG. 31, the distance D1 between the opposing surfaces of the wiring protection part 1700 and the upper structure 1800 may gradually become narrower along the direction in which the second fluid flows. According to this, the second fluid flowing into the thermoelectric system 3000 can gather in the central region where the thermoelectric module 1200 is disposed and then pass along the third direction.

[0214] Differently, the shapes of the wiring protection part 2700 and the upper structure 2800 in the thermoelectric system disposed at the lower end of the thermoelectric system closest to the inlet of the second fluid, for example, in the second thermoelectric system 3200 of FIG. 31, are different from the shapes of the wiring protection part 1700 and the upper structure 1800 in the thermoelectric system closest to the inlet of the second fluid, for example, in the first thermoelectric system 3100 of FIG. 31.

[0215] According to an embodiment of the present invention, the width of the bottom of the wiring protection part 2700 of the second thermoelectric system 3200 is 0.98 to 1.02 times the width of the top part. Similarly, the width of the bottom of the upper structure 2800 of the second thermoelectric system 3200 is 0.98 to 1.02 times the width of the top part. Here, the bottom and the top part may be arranged oppositely along the third direction. For example, the bottom may be the bottom surface or the region including the bottom surface arranged toward the plurality of thermoelectric devices included in the second thermoelectric system 3200, and the top part may be the top surface or the region including the top surface which is the opposite surface of the bottom surface. The top surface may be the surface arranged toward the first thermoelectric system 3100.

[0216] According to this, the thermoelectric system disposed at the lower end of the thermoelectric system closest to the inlet of the second fluid, for example, the second thermoelectric system 3200 in FIG. 31, the opposing surfaces of the wiring protection part 2700 and the upper structure 2800 can be parallel to each other. In this specification, if it is within an error range of within ±4%, it can be interpreted as parallel. That is, the distance D2 between the opposing surfaces of the wiring protection part 2700 and the upper structure 2800 in the second thermoelectric system 3200 in FIG. 31 can be the same along the direction in which the second fluid flows or have a deviation within ±4%. For example, the deviation between the shortest distance between the bottom of the wiring protection part 2700 and the bottom of the upper structure 2800 and the shortest distance between the top of the wiring protection part 2700 and the top of the upper structure 2800 can be within ±4%. That is, the shortest distance between the bottom of the wiring protection part 2700 and the bottom of the upper structure 2800 can be 0.96 to 1.04 times the shortest distance between the top of the wiring protection part 2700 and the top of the upper structure 2800. According to this, it is possible to prevent the problem that the second fluid flows outside the central region where the thermoelectric module 1200 is disposed and a vortex is generated. That is, the opposing surfaces of the wiring protection part 2700 and the upper structure 2800 can play a role in controlling the vortex of the second fluid within the path in which the second fluid flows.

[0217] For this reason, the shapes of the first and second side walls 2720, 2730 of the wiring protection part 2700 of the second thermoelectric system 3200, the shape of the heat insulation member 2760, and the shape of the shield cover part 2780 can be different from the shapes of the first and second side walls 1720, 1730 of the wiring protection part 1700 of the first thermoelectric system 3100, the shape of the heat insulation member 1760, and the shape of the cover member 1780. As described through FIGS. 26 to 30, the shield cover part 2780 includes a first inclined surface, and accordingly, the fifth side walls 1770, 1772 also include inclined surfaces so that the shield cover part 2780 can be disposed. In contrast, the external shape of the wiring protection part 2700 of the second thermoelectric system 3200 can be in the shape of a straight hexahedron, and accordingly, the external shape of the upper structure 2800 of the second thermoelectric system 3200 can also have the shape of a straight hexahedron, which is the same external shape as the wiring protection part 2700.

[0218] That is, the wiring protection part 2700 of the second thermoelectric system 3200 is arranged on the thermoelectric device and includes a bottom surrounded by a fifth end 2711, a sixth end 2712, a seventh end, and an eighth end 2714, a sixth side wall 2720 and a seventh side wall 2730 respectively extending upward from the fifth end 2711 and the sixth end 2712 of the bottom, an eighth side wall 2740 arranged between the sixth side wall 2720 and the seventh side wall 2730 and extending upward from the seventh end of the bottom, a ninth side wall 2742 arranged between the sixth side wall 2720 and the seventh side wall 2730 and extending upward from the eighth end 2714 of the bottom, and a third top part 2790 spaced from the bottom and extending in a second direction from the eighth side wall 2740. At this time, the ninth side wall 2740 extends to the third top part 2790, and the eighth side wall 2740 and the ninth side wall 2740 are parallel to each other. As shown in the figure, both ends along the first direction of the ninth side wall 2740 can be extended to meet the third top part 2790, and accordingly, the ninth side wall 2740 can have a concave shape between both ends along the first direction. When the ninth side wall 2740 has a concave shape between both ends along the first direction, it is easy to assemble the shield cover part 2780 after arranging wiring and heat insulation members in the space between the bottom, the eighth side wall 2740, and the ninth side wall 2740.

[0219] Similarly, the upper structure 2800 of the second thermoelectric system 3200 can include side walls 2820, 2842 and a top part 2980 that are symmetric to the wiring protection part 2700. Although not shown, the shield cover part of the upper structure 2800 of the second thermoelectric system 3200 can have the same shape as the shield cover part 2780 of the wiring protection part 2700 of the second thermoelectric system 3200.

[0220] Here, although the second thermoelectric system 3200 is shown as being arranged under the first thermoelectric system 3100, it is not limited thereto, and additional thermoelectric systems may be further arranged under the second thermoelectric system 3200.

[0221] Throughout this specification, the thermoelectric elements 100 and 1210 are described as including a first substrate 110, a first electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, a second electrode 150, and a second substrate 160. However, the definition of the thermoelectric elements 100 and 1210 is not limited thereto, and the thermoelectric elements 100 and 1210 may include a first electrode 120, a P-type thermoelectric leg 130, an N-type thermoelectric leg 140, a second electrode 150, and a second substrate 160, and may mean those disposed on the first substrate 110.

[0222] The power generation system can generate electricity through heat sources generated in ships, automobiles, power plants, geothermal energy, etc., and a plurality of power generation devices can be arranged to efficiently collect the heat sources. At this time, each power generation device can improve the bonding force between the thermoelectric module and the fluid flow part to improve the cooling performance of the low-temperature part of the thermoelectric element. Along with this, the efficiency and reliability of the power generation device can be improved, so the fuel efficiency of transportation devices such as ships and vehicles can be improved. Therefore, in the shipping industry and the transportation industry, it is possible to reduce transportation costs and create an environmentally friendly industrial environment. When applied to the manufacturing industry such as steel mills, material costs and the like can be saved.

[0223] In the above, the present invention has been described with reference to preferred embodiments. However, it will be understood by those skilled in the relevant technical field that the present invention can be variously modified and changed without departing from the spirit and scope of the present invention described in the following claims.

Claims

1. a first thermoelectric module, and a second thermoelectric module disposed adjacent to the first thermoelectric module, wherein the first thermoelectric module includes a first lower substrate, a plurality of semiconductor elements disposed on the first lower substrate, and a first upper substrate disposed on the plurality of semiconductor elements, wherein the second thermoelectric module includes a second lower substrate, a plurality of semiconductor elements disposed on the second lower substrate, and a second upper substrate disposed on the plurality of semiconductor elements, wherein the first thermoelectric module includes a first groove, and the second thermoelectric module includes a second groove disposed at a position corresponding to the first groove, the thermoelectric module array.

2. The plurality of semiconductor elements disposed on the first lower substrate include a first-1 semiconductor element disposed in a first region of the first lower substrate and a first-2 semiconductor element disposed in a second region of the first lower substrate, the plurality of semiconductor elements disposed on the second lower substrate include a second-1 semiconductor element disposed in a third region of the second lower substrate and a second-2 semiconductor element disposed in a fourth region of the second lower substrate, the first upper substrate includes a first-1 upper substrate disposed on the first-1 semiconductor element and the first-2 upper substrate disposed on the first-2 semiconductor element, and the second upper substrate includes a second-1 upper substrate disposed on the second-1 semiconductor element and a second-2 upper substrate disposed on the second-2 semiconductor element, the thermoelectric module array according to claim 1.

3. The first groove is formed on one side of the first lower substrate, and the second groove is formed on one side of the second lower substrate, the thermoelectric module array according to claim 2.

4. The first groove and the second groove are disposed at positions corresponding to a region between the first-1 upper substrate and the first-2 upper substrate, the thermoelectric module array according to claim 3.

5. including a frame disposed on the first lower substrate and the second lower substrate and disposed between the first upper substrate and the second upper substrate, wherein the frame includes holes corresponding to the first groove and the second groove, the thermoelectric module array according to claim 4.

6. The frame is disposed between the first-1 upper substrate and the first-2 upper substrate and between the second-1 upper substrate and the second-2 upper substrate, the thermoelectric module array according to claim 5.

7. further including a connection electrode connecting the first region and the second region, The thermoelectric module array according to claim 2, wherein the first groove and the second groove are arranged at positions overlapping each other along a direction perpendicular to the direction in which the connecting electrode extends.

8. further comprising fastening members disposed in the first groove and the second groove, the first upper substrate includes a first cutting portion, the second upper substrate includes a second cutting portion, The thermoelectric module array according to claim 5, wherein the first cutting portion and the second cutting portion are corner portions adjacent to the fastening members of the first upper substrate and the second upper substrate.

9. The thermoelectric module array according to claim 8, wherein the frame has a shape corresponding to the first cutting portion and the second cutting portion.

10. a first insulating layer disposed between the first lower substrate and the plurality of semiconductor elements, and a second insulating layer disposed between the plurality of semiconductor elements and the first upper substrate. The thermoelectric module array according to claim 1.

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