Interlock system for a processing chamber exhaust assembly

Abstract

An exemplary semiconductor processing system may include a gas source coupled to several processing chambers. The gas source may include a controller. Each processing chamber may include an exhaust assembly having a foreline and a pump. The system may include at least one abatement system coupled to each pump. The system may include multiple exhaust lines extending between each pump and the abatement system. The system may include a dilution gas source coupled to each exhaust line. The system may include a mass flow controller fluidly coupled between the dilution gas source and each exhaust line. The system may include a temperature sensor coupled to each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled to a controller of the gas source. The controller may control the flow rate of gas into the chamber based on measurements from the temperature sensor.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 17 / 883,368, entitled "INTERLOCK SYSTEM FOR PROCESSING CHAMBER EXHAUST ASSEMBLY," filed on August 8, 2022, which is incorporated by reference in its entirety into this specification.

[0002]

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. In particular, the present technology relates to gas supply and exhaust systems and other semiconductor processing equipment. [Background technology]

[0003]

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on substrate surfaces. Producing patterned materials on substrates requires controlled methods for forming and removing materials. Precursors are often supplied to a processing region and distributed to uniformly deposit or etch material on the substrate. During and after processing steps, these precursors and / or other gases are exhausted from the processing region for disposal. In the case of toxic and / or flammable gases, gas disposal can include burning the toxic gas in an abatement system. Such disposal requires diluting the toxic gas with other gases before abatement, as well as the use of an abatement gas (e.g., a combustion-supporting gas) to fuel the abatement system.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to abate toxic and / or flammable gases while reducing the amount of dilution and / or abatement gas consumed. These and other needs are addressed by the present technology. Summary of the Invention

[0005] An exemplary semiconductor processing system may include at least one gas source fluidly coupled to one or more processing chambers. The at least one gas source may include a controller. Each processing chamber may include an exhaust assembly having a foreline and a pump fluidly coupled to the foreline. The system may include at least one abatement system fluidly coupled to a downstream end of each pump. The system may include multiple gas exhaust lines. Each gas exhaust line may extend between a respective pump and the abatement system. The system may include at least one dilution gas source fluidly coupled to each gas exhaust line. The system may include at least one mass flow controller fluidly coupled between the at least one dilution gas source and each gas exhaust line. The system may include at least one temperature sensor coupled to each gas exhaust line at a location between the respective pump and the abatement system. The at least one temperature sensor may be communicatively coupled to a controller of the at least one gas source. The controller may control a flow rate of gas into at least one of the one or more processing chambers based on measurements from the at least one temperature sensor.

[0006] In some embodiments, at least one temperature sensor may be communicatively coupled to at least one mass flow controller. The at least one mass flow controller may control a flow rate of dilution gas into at least one of the gas exhaust lines based on measurements from the at least one temperature sensor. The at least one mass flow controller may increase a flow rate of dilution gas into at least one of the gas exhaust lines when a temperature measured by the at least one temperature sensor exceeds a predetermined threshold. The at least one mass flow controller may increase a flow rate of dilution gas into at least one of the gas exhaust lines when a temperature measured by the at least one temperature sensor exceeds a first threshold. The controller may shut off the flow of gas into at least one of the one or more processing chambers when a temperature measured by the at least one temperature sensor exceeds a second threshold higher than the first threshold. The controller may shut off the flow of gas into at least one of the one or more processing chambers when a temperature measured by the at least one temperature sensor exceeds a predetermined threshold. Each temperature sensor may be coupled to an outer surface of a respective one of the gas exhaust lines. The system may include a plurality of heater jackets, each covering a respective one of the temperature sensors. At least one gas source may independently control the flow rate of gas to each of the one or more processing chambers. At least one mass flow controller may independently control the flow rate of dilution gas to each of the gas exhaust lines.

[0007] Some embodiments of the present invention may include a method for abating gas from a processing chamber. The method may include flowing a process gas into the processing chamber. The method may include exhausting the process gas from the processing chamber through an exhaust assembly. The exhaust assembly may include a foreline and a pump fluidly coupled to the foreline. The method may include flowing a dilution gas into a gas exhaust line downstream of the pump. The dilution gas may mix with the process gas in the gas exhaust line. The method may include measuring a temperature in the gas exhaust line. The method may include reducing a flow rate of the process gas into the processing chamber when the temperature exceeds a predetermined threshold.

[0008] In some embodiments, the method may include adjusting a flow rate of a dilution gas when the temperature exceeds a preset threshold that is lower than a predetermined threshold. The method may include flowing a dilution gas and a process gas into an abatement system. The method may include adjusting a flow rate of one or more abatement gases based on a chemical recipe being used in the processing chamber. Reducing the flow rate of the process gas may include completely shutting off the supply of process gas to the processing chamber.

[0009] Some embodiments of the present technology may include a method for abating gas from at least one processing chamber. The method may include flowing at least one process gas to a plurality of processing chambers. The method may include exhausting the process gas from each of the plurality of processing chambers through an exhaust assembly of each respective processing chamber. Each exhaust assembly may include a foreline, a pump fluidly coupled to the foreline, and a gas exhaust line extending between the pump and an abatement system. The method may include flowing a dilution gas into each gas exhaust line downstream of each respective pump. The dilution gas may mix with the process gas in the gas exhaust line. The method may include measuring a temperature of each gas exhaust line. The method may include adjusting a flow rate of one or more gases when a temperature in a corresponding gas exhaust line exceeds a predetermined threshold.

[0010] In some embodiments, at least one process gas flowed into one of the plurality of processing chambers may be different from at least one process gas flowed into another one of the plurality of processing chambers. Adjusting the flow rate of the one or more gases may include cutting off the supply of at least one process gas to each of the plurality of processing chambers while allowing the at least one process gas to continue flowing to at least one other of the plurality of processing chambers. Adjusting the flow rate of the one or more gases may include adjusting the flow rate of a dilution gas into a particular one of the gas exhaust lines when a temperature of the particular one of the gas exhaust lines exceeds a preset threshold that is lower than a predetermined threshold. Each gas exhaust line may be coupled to a different inlet of an abatement system. The method may include adjusting the flow rate of the one or more abatement gases at the inlet of the abatement system based on a chemical recipe being used in a particular processing chamber associated with each one of the gas exhaust lines coupled to the inlet of the abatement system.

[0011] Such technology may provide numerous advantages over conventional systems and techniques. For example, embodiments of the present technology may reduce the amount of dilution and / or abatement gas used in the disposal of toxic process gases. For example, embodiments may allow the flow rate of the dilution and / or abatement gas to be adjusted to precisely or closely match the needs of a particular chemical recipe. Furthermore, in embodiments where exhaust and / or abatement equipment is shared across multiple chambers, embodiments may allow the flow rate of the process gas, dilution gas, and / or abatement gas for each chamber to be independently controlled. These and other embodiments, along with their many advantages and features, are described in more detail below and in the accompanying drawings.

[0012]

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0013] [Figure 1] 1 shows a schematic partial cross-sectional view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2]

[0014] 1 shows a schematic diagram of an exemplary processing system in accordance with some embodiments of the present technique; [Figure 3]

[0015] 1 illustrates several steps of an exemplary method for flowing gases into one or more processing chambers in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0016] Some of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes and should not be considered to scale unless expressly stated to be to scale. Furthermore, as schematic diagrams, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include material that is emphasized for illustrative purposes.

[0015]

[0017] In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used herein, the description is applicable to any one of the similar components having the same first reference numeral, regardless of the letter.

[0016]

[0018] Semiconductor processing steps often involve the use of plasma-generating precursors and / or other process gases to perform deposition, etching, and / or other process steps. Some process steps may involve the use of toxic and / or flammable gases that must be disposed of once exhausted from the process chamber. In many cases, disposal of the exhausted gases may involve feeding the exhausted gases to an abatement system that essentially combusts the exhausted gases. While these gases are generally stable during processing steps, problems arise during the venting process because the pressure within the exhaust assembly is higher than the reduced pressure maintained within the process chamber. As the pressure within the exhaust assembly increases, exothermic reactions of flammable gases can occur within the exhaust line.

[0017]

[0019] To prevent such exothermic reactions from occurring, conventional exhaust / abatement systems introduce a dilution gas into the exhaust line to dilute the exhausted process gas. However, conventional systems do not include any feedback loop to determine when and how much dilution gas should be used to dilute the exhausted process gas. Therefore, current systems typically set the dilution gas flow rate at a rate sufficient to dilute the maximum amount of process gas exhausted by the chamber for any chemical recipe that may be utilized in the chamber. Furthermore, conventional systems typically over-dilute by 20% to 50% to increase safety factors to ensure that exothermic reactions do not occur. While such processes are effective in preventing exothermic reactions upstream of the abatement system, they cause significant waste due to the large amount of dilution gas (often significantly exceeding the amount required for a particular process step). Furthermore, a fixed amount of abatement gas is flowed into the process chamber regardless of the chemical recipe being flowed, which also causes gas waste.

[0018]

[0020] The present technology overcomes these challenges by including one or more temperature sensors that allow the increase in temperature that occurs during an exothermic reaction to be detected. For example, the temperature sensor may be located downstream of the pump in the exhaust assembly, since this is typically where the pressure in the exhaust assembly is high enough to cause an exothermic reaction. Based on the temperature in the exhaust assembly, the flow rate of the dilution gas may be adjusted to help prevent the concentration of the exhausted gas from increasing to a level where a reaction is likely to occur. If the temperature in the exhaust assembly exceeds a threshold level, the supply of process gas to the chamber may be reduced and / or shut off to prevent a buildup of flammable gases in the exhaust assembly, thereby mitigating and / or preventing any exothermic reactions from occurring. In embodiments in which a single exhaust assembly and / or abatement system is shared across multiple chambers, adjustments to the flow rate of the dilution gas and / or process gas may be performed independently for each chamber. This may allow different chemical recipes to be flowed in each chamber and / or allow flow to one chamber to continue while another chamber is shut off. Additionally, embodiments may allow the flow rate of the abatement gas to be customized for a given chemical recipe being delivered to a particular chamber. Thus, the present techniques may reduce the amount of diluent and / or abatement gas used and wasted during processing and / or cleaning steps.

[0019]

[0021] The remainder of the disclosure will broadly identify a particular venting process utilizing the disclosed technology, and it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may occur within the described chambers. Accordingly, the present technology should not be considered limited to use with only these particular deposition processes or chambers. This disclosure describes one possible system and chamber that may include a lid component according to embodiments of the present technology, before describing additional modifications and adaptations to this system according to embodiments of the present technology.

[0020]

[0022] 1 shows a schematic partial cross-sectional view of an exemplary processing chamber 100 in accordance with some embodiments of the present technique. Chamber 100 can be used to perform semiconductor processing steps, including deposition of hard mask materials, as well as other deposition, removal, and cleaning steps, as described above. Chamber 100 may show a partial view of chamber components that may be incorporated into the described semiconductor processing system, and may show a view across the center of the faceplate; otherwise, the faceplate may be of any size and include any number of openings. Any aspect of chamber 100 can be incorporated into other processing chambers or systems, as will be readily understood by those skilled in the art.

[0021]

[0023] The chamber 100 can include a processing chamber including a faceplate 105 through which precursors can be supplied for processing, and the faceplate 105 can be coupled to a power source for generating a plasma within a processing region of the chamber. For example, precursors, cleaning gases, and / or other gases can be supplied to the faceplate 105 from one or more gas sources (e.g., a gas panel) via one or more gas supply components (e.g., a gas box, a blocker plate, etc.). The chamber can also include a chamber body 110. The chamber body 110 can include sidewalls and a base, as shown. A pedestal or substrate support 115 can extend through the base of the chamber, as described above. The substrate support 115 can include a support plate 120 capable of supporting a semiconductor substrate. The support plate 120 can be coupled to a shaft 125 that extends through the base of the chamber.

[0022]

[0024] The faceplate 105 may be supported either directly or indirectly by the chamber body 110. By way of example only, the faceplate 105 may be supported on a pumping liner 130 and / or an isolator or other liner 135. For example, the pumping liner 130 may rest on a shelf formed by the upper part of the chamber body 110. An additional liner 135 and / or faceplate 105 is then placed on top of the pumping liner 130. The pumping liner 130 may define one or more exhaust ports 140 that allow gas flow from the processing region to one or more forelines 150 coupled to the processing chamber. For example, each exhaust port 140 may be fluidly coupled to the upper end of one or more exhaust lumens 145 formed in the sidewalls and / or base of the chamber body 110. A lower portion of the exhaust lumens 145 may be coupled to a respective one of the forelines 150. Each foreline 150 may define a fluid conduit for flowing process gases from the processing chamber and directing the process gases through a throttle valve 155. The throttle valve 155 may control the fluid conductance through the foreline 150. A pump 160 may be coupled to the throttle valve 155 and / or the downstream end of the foreline 150 for pumping gases out of the chamber body 110.

[0023]

[0025] While illustrated as a side pumping chamber having a pumping liner 130, it will be understood that other configurations are possible. For example, the chamber 100 can be a lower pumping chamber. In the lower pumping chamber, gases are vented from the chamber through one or more exhaust openings formed in or adjacent to the lower portion of the chamber body 110. The exhaust openings can be coupled to the foreline 150, the throttle valve 155, and / or the pump 160. In various embodiments, other configurations of exhaust components are possible.

[0024]

[0026] FIG. 2 shows a schematic diagram of an exemplary substrate processing system 200 for deposition, etching, baking, and curing chambers in accordance with some embodiments of the present technique. The system 200 may include one or more gas sources 205, each supplying one or more gases to one or more processing chambers 210. For example, each gas source 205 may be a gas panel that supplies one or more process gases (such as plasma-generating precursors, inert gases, cleaning gases, and / or other gases) to some or all of the chambers 210. As shown, the system 200 includes four chambers 210, although any number of chambers 210 may be present in various embodiments. For example, the system 200 may include one or more chambers, two or more chambers, three or more chambers, four or more chambers, five or more chambers, six or more chambers, seven or more chambers, eight or more chambers, or more, where each of the chambers 210 shares a single gas source 205 (e.g., a gas panel) with one or more controllers. One or more controllers operate several valves, mass flow controllers, and / or other flow control devices used to control the flow of any gases for a particular chemical recipe to the various chambers 210. The controllers of the gas sources 205 may independently control the flow of gases to each chamber 210. Thereby, the chemical recipe delivered to each chamber 210 may be the same or different.

[0025]

[0027] Each chamber 210 may be similar to chamber 100 described above and may include any of the features described with respect to chamber 100. For example, each chamber 210 may define a processing region. Within the processing region, one or more processing steps may be performed, such as deposition processes, including cyclical layer deposition, chemical vapor deposition, and physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes. Each chamber 210 may include a substrate support that can accept a semiconductor substrate (or other substrate) during a processing step. Gases from a gas source 205 may be supplied to the processing region via a gas supply assembly. The gas supply assembly may include, but is not limited to, a gas box, a blocker plate, and / or a faceplate. Gases flowed into chamber 210 may be exhausted out of chamber 210 via an exhaust assembly 215. The exhaust assembly 215 may include a pumping liner, a foreline 220, a throttle valve, a pump 225, and / or a gas exhaust line 230. As shown, exhaust assembly 215 includes a foreline 220 fluidly coupled to chamber 210 (such as via a pumping liner), and a pump 225 may be fluidly coupled to a downstream end of foreline 220. The downstream end of pump 225 may be fluidly coupled to an abatement system 235. In that case, gas exhaust line 230 extends between and is fluidly coupled to pump 225 and abatement system 235.

[0026]

[0028] In some embodiments, each chamber 210 may be coupled to a dedicated abatement system 235. However, in many embodiments, multiple (and potentially all) chambers 210 may share a single abatement system 235. In such embodiments, the exhaust assembly 215 of each chamber 210 may be coupled to a separate inlet of the abatement system 235. This allows for customization of the flow rate of abatement gases to the abatement system 235 based on the chemical recipe flowing into and exhausting from each chamber 210.

[0027]

[0029] Before reaching the abatement system 235, the process and / or cleaning gases exhausted from the chamber 210 may be diluted to help prevent the exhausted gases from reacting. For example, a dilution gas source 240 may be coupled to the exhaust assembly 215 downstream of the pump 225. In some embodiments, this may involve providing dilution lines 245 extending between the dilution gas source 240 and each gas exhaust line 230. To control the flow rate of the dilution gas, mass flow controllers 250 and / or other flow control devices may be coupled between the dilution gas source 240 and the gas exhaust line 230. In some embodiments, each gas exhaust line 230 may have a dedicated dilution gas source 240 and / or mass flow controller 250, while in other embodiments, multiple gas exhaust lines 230 may share a single dilution gas source 240 and / or mass flow controller 250.

[0028]

[0030] One or more temperature sensors 255 may be coupled to each gas exhaust line 230, thereby allowing the temperature downstream of the pump 225 (e.g., between the pump 225 and the abatement system 235) to be monitored. The temperature sensors 255 may be coupled to the exterior surface of the gas exhaust line 230, disposed within the lumen of the gas exhaust line 230, and / or otherwise coupled to the gas exhaust line 230, to allow the temperature of the gas exhaust line 230 and / or the gas passing through the gas exhaust line 230 to be monitored. In some embodiments, one or more heater jackets 260 may be disposed around the exterior surface of the gas exhaust line 230 and / or the temperature sensors 255. While a single temperature sensor 255 is illustrated, it will be understood that any number of temperature sensors may be coupled to each gas exhaust line 230. For example, each gas exhaust line 230 may include one or more temperature sensors, two or more temperature sensors, three or more temperature sensors, four or more temperature sensors, or more.

[0029]

[0031] The temperature sensor 255 may be communicatively coupled to the gas source 205, the dilution gas source 240, and / or the mass flow controller 250. This allows temperature measurements from the temperature sensor 255 to be used to provide feedback for controlling the flow rate of a process / cleaning gas to a particular chamber 210 and / or for controlling the flow rate of a dilution gas to a particular gas exhaust line 230. For example, the controller of the gas source 205 may control and / or otherwise adjust the flow rate of one or more process and / or cleaning gases to one or more processing chambers 210 based on measurements from the temperature sensor 255. In a particular embodiment, the controller of the gas source 205 may reduce the flow rate and / or completely cut off the supply of one or more process and / or cleaning gases to the processing chamber 210 (e.g., a flow rate of 0 lpm) when the temperature of the gas exhaust line 230 associated with the processing chamber 210 exceeds a predetermined threshold. The threshold may be set below the reaction temperature of the gas being exhausted from the chamber 210 and / or at a temperature indicating the onset of a small exothermic reaction in the gas exhaust line 230. In some embodiments, the threshold may be at least about 5°C, at least about 10°C, at least about 15°C, at least about 20°C, at least about 25°C, at least about 50°C, or higher temperatures below the reaction temperature. In one particular embodiment, the threshold may be below about 210°C, below about 205°C, below about 200°C, below about 195°C, below about 190°C, below about 185°C, below about 180°C, below about 175°C, or lower, depending on the gases being flowed through the chamber 210 and exhaust assembly 215. In some embodiments, multiple thresholds may be used, where a lower threshold temperature results in the flow of gas being throttled down or otherwise reduced, while a final (i.e., highest) threshold similar to those described above may result in the flow of gas being shut off completely using one or more valves of the gas source 205.In some embodiments, if dilution gas is not flowed into a particular gas exhaust line 230, a valve on the gas source 205 may be closed to ensure that toxic and / or flammable gases cannot be flowed into and exhausted from the chamber 210 without sufficient dilution gas. In some embodiments, detection of the flow rate of the dilution gas may be based on a signal from a mass flow controller 250, a temperature measurement from a temperature sensor 255 (such as a temperature at or in the gas exhaust line 230 that is below a known temperature of the dilution gas), and / or using one or more flow sensors and / or flow sensor switches 280 integrated into the gas exhaust line 230 and / or the dilution line 245. The flow sensor and / or flow sensor switch 280 may measure the flow rate of the dilution gas and ensure that the flow rate meets a minimum threshold flow rate for flowing the process / cleaning gas. If the flow rate falls below this threshold, the flow sensor and / or flow sensor switch 280 may cause the flow rate of the process / cleaning gas to be stopped. This may ensure that a minimum flow / volume of dilution gas flows into the gas exhaust line 230 to dilute the exhausted gas.

[0030]

[0032] In some embodiments, each mass flow controller 250 may control the flow rate of dilution gas to at least one of the gas exhaust lines 230. This control is based on measurements from a temperature sensor 255 associated with that gas exhaust line 230. For example, a preset flow rate of dilution gas may be flowed for a given chemistry as long as the temperature measurement remains below a certain preset threshold (which may be less than the predetermined threshold used by the gas source 205 controller). The mass flow controller 250 then increases the flow rate of dilution gas when the temperature exceeds the preset threshold. The flow rate of dilution gas may increase proportionally to the temperature and / or in steps. In some embodiments, multiple temperature thresholds may be utilized, whereby each time a higher temperature threshold is exceeded, the flow rate of dilution gas is increased by a specific amount and / or by a specific level. In some embodiments, the flow rate of dilution gas may be controlled independently for each chamber / gas exhaust line 230. In some embodiments, the amount of dilution gas flowed to each exhaust line 230 may be set based on the recipe being flowed through the particular chamber 210. For example, empirical data may be used to generate tables, formulas, or the like. The tables, formulas, or the like may be used to determine how much of a given dilution gas needs to flow at each step of a given recipe to adequately dilute the exhausted gas. In the event that more dilution is needed at a given step, the temperature sensor 255 may detect a temperature increase. This temperature increase triggers the mass flow controller 250 to increase the amount of dilution gas flowed into a particular one of the gas exhaust lines 230. Thus, some embodiments may allow recipe-based dilution gas control to be further supplemented by providing a dynamic adjustment knob based on the temperature in the gas exhaust line 230. For example, an initial flow rate of the dilution gas may be set based on the recipe. The flow rate may then be adjusted if the temperature in the gas exhaust line 230 exceeds a predetermined threshold.

[0031]

[0033] By using the temperature of the gas exhaust line 230 for each processing chamber as a feedback loop to control the flow rate of process / cleaning gas and / or dilution gas, embodiments may allow the flow rate of gas to be customized based on conditions within the exhaust assembly to prevent exothermic reactions of flammable gases while reducing the use of dilution gas. For example, when the measured temperature of the gas exhaust line 230 and / or the gas flowing therein exceeds a predetermined threshold, the gas source 205 may reduce and / or shut off the supply of process / cleaning gas to the chamber 210. This, in turn, may reduce the concentration of exhausted gas in the gas exhaust line 230 associated with the chamber 210 and reduce the likelihood of undesired exothermic reactions in the gas exhaust line 230. By allowing the gas supply for each chamber 210 to be controlled independently of one another, the flow rate of gas to a subset (e.g., one or more) of the chambers 210 may be reduced or stopped while the flow rate of gas to another subset of the chambers 210 is unaffected. Furthermore, by adjusting the flow rate of the dilution gas based on the temperature of the gas exhaust line 230 and / or the gas flowing within the gas exhaust line 230, dilution gas usage and waste can be reduced, while the flow rate can still be increased as the temperature increases to prevent exothermic reactions from occurring within the gas exhaust line 230. This allows the flow rate of the dilution gas to be tailored to the specific needs of the application via a feedback loop to ensure that the processing system operates safely while reducing dilution gas usage.

[0032]

[0034] The abatement system 235 may include several inlets 265, where each inlet is coupled to the gas exhaust line 230 of one of the chambers 210. The abatement system 235 may be coupled to and / or include one or more abatement gas sources 270. The one or more abatement gas sources 270 may supply one or more abatement gases to the abatement system 235. For example, the abatement gases may include methane, O2, hydrogen, and / or other fuels that may be used to power a burner or combustor 275. The burner or combustor 275 burns the exhausted gases and / or heats the exhausted (and diluted) gases to a temperature high enough to cause reactions that convert the exhausted gases into safe and / or otherwise stable by-products.

[0033]

[0035] The abatement system 235 may be communicatively coupled to the controller of the gas source 205. This may allow the flow rate of the abatement gas (e.g., fuel source) to be controlled (e.g., set and / or adjusted) based on the chemical recipe being flowed to each chamber 210 connected to the abatement system 235. For example, based on the amount, flow rate, timing, and / or other characteristics of a particular recipe, the flow rate and / or type of abatement gas flowed to the combustor 275 may be adjusted to most efficiently heat the exhausted gases exiting the combustor 275 while minimizing and / or otherwise reducing the amount of fuel required. For example, a lookup table may be generated that indicates how much of a given abatement gas is needed to fuel the combustor 275 for each step in a given recipe. Each step in a recipe may be associated with a given set of one or more gases and timing elements (e.g., start time, end time, duration). The amount and / or flow rate of one or more abatement gases needed for each step is provided. The abatement system 235 and / or abatement gas source 270 may communicate with the gas source 205 controller and / or other devices to determine what recipe is being flowed to each connected chamber 210 and use tables to identify the flow rate, timing, amount, selection, and / or other settings for one or more abatement gases needed to safely and completely abate the exhausted gases. When multiple chambers 210 are operating, the abatement system 235 and / or abatement gas source 270 may take into account the recipe and timing for each chamber 210 that exhausts gas to the combustor 275 to ensure that sufficient abatement gas is present at any given point in time. This allows different chambers 210 to utilize different recipes and / or be operated out of sync with one another, because the abatement system 235 and / or abatement gas source 270 may determine the total flow rate and concentration of gas present at each inlet 265 and / or combustor 275 based on the recipe used in each chamber 210.

[0034]

[0036] 3 illustrates several steps of a method 300 for abating gases from one or more processing chambers in accordance with some embodiments of the present technique. The method may be performed in a variety of processing systems, including the processing chamber 100 or system 200 described above. System 200 may include a gas source, exhaust assembly, or abatement system in accordance with some embodiments of the present technique, such as any of the gas sources, exhaust assemblies, or abatement systems described above. Method 300 may include several optional steps that may or may not be specifically associated with some embodiments of methods in accordance with the present technique.

[0035]

[0037] Method 300 may include a processing and / or cleaning method, which may include flowing one or more gases into one or more processing chambers in step 305. For example, method 300 may include steps for forming a hard mask film or other deposition steps. The method may include optional steps before beginning method 300, or the method may include additional steps. For example, method 300 may include steps performed in a different order than shown. Method 300 may include flowing at least one process and / or cleaning gas into one or more processing chambers. The gases and / or gas mixtures supplied to each chamber may be the same or different in various embodiments. The flowed gases may include plasma generating precursors, inert gases, cleaning gases, and / or other gases. In some examples, one or more of the gases may be flammable and / or toxic and may need to be carefully disposed of, such as by using thermal abatement.

[0036]

[0038] During and / or after the processing and / or cleaning steps, gases may be exhausted from each chamber through a corresponding exhaust assembly, such as exhaust assembly 215, in step 310. For example, gases may be pumped through a foreline and a pump into a gas exhaust line extending between the pump and an abatement system. In step 315, a dilution gas may be flowed into each gas exhaust line downstream of the pump. The dilution gas then mixes with the process and / or cleaning gases exhausted from the chamber. The flow of dilution gas may be used to dilute the process and / or cleaning gases to prevent the concentration of the exhausted gases from reaching a level that would produce an exothermic reaction when the pressure and / or temperature in the gas exhaust line increases.

[0037]

[0039] In step 320, the temperature of each gas exhaust line and / or the gas flowing through each gas exhaust line may be measured using one or more temperature sensors coupled to each gas exhaust line. One or more actions may be performed based on the measured temperature. For example, in step 325, the flow rate of one or more gases may be adjusted when the measured temperature exceeds a predetermined threshold. As one example, when the temperature of a particular gas exhaust line and / or the gas flowing through a particular gas exhaust line exceeds a predetermined threshold, the gas source controller may reduce the flow rate of process and / or cleaning gas to the chamber associated with the gas exhaust line where the high temperature is detected and / or completely shut off the supply of process and / or cleaning gas to that chamber. This may reduce the concentration of process and / or cleaning gas in the gas exhaust line to prevent and / or mitigate exothermic reactions occurring in the gas exhaust line. The flow rate of process and / or cleaning gas for each chamber may be controlled independently of one another, such that when the flow rate of gas to one chamber is reduced or shut off, the flow rate of gas to other chambers remains unaffected.

[0038]

[0040] Adjusting the flow rate of one or more gases may include adjusting the flow rate of a dilution gas to a particular one of the gas exhaust lines when a temperature associated with the gas exhaust line exceeds a predetermined threshold (which may be lower than a predetermined threshold associated with adjusting the process / cleaning gas). The flow rate of the dilution gas may be increased when the temperature exceeds a preset threshold. The flow rate of the dilution gas may be increased proportionally to the temperature and / or increased in stages. In some embodiments, multiple temperature thresholds may be utilized, whereby each time a higher temperature threshold is exceeded, the flow rate of the dilution gas is increased by a particular amount and / or level. In some embodiments, the flow rate of the dilution gas may be controlled independently for each chamber / gas exhaust line.

[0039]

[0041] The dilution gas and process / cleaning gas may be flowed to an abatement system for thermal disposal. For example, gas flowing through each gas exhaust line may be flowed into separate inlets of one or more abatement systems. In some embodiments, the processor of the abatement system and / or the processor (or mass flow controllers coupled thereto) of one or more abatement gas sources may be communicatively coupled to the gas sources supplying gas to each chamber coupled to the abatement system. This allows the flow rate, type, timing, and / or other characteristics of the abatement gas to be adjusted based on the chemicals being flowed to and exhausted from each chamber coupled to the abatement system. For example, based on the recipe being flowed into the abatement system at a given time, the abatement gas may be adjusted to efficiently thermally abate the exhausted gas. For example, based on the amount, flow rate, timing, and / or other characteristics of a particular recipe, the flow rate and / or type of abatement gas flowed to the combustor of the abatement system may be adjusted to most efficiently heat the exhausted gas exiting the combustor while minimizing and / or otherwise reducing the amount of fuel required. For example, a lookup table may be generated. The lookup table indicates how much of a given abatement gas is needed to fuel the combustor for each step in a given recipe. Each step in a recipe can be associated with a given set of one or more gases and timing elements (e.g., start time, end time, duration). The amount and / or flow rate of one or more abatement gases needed for each step is provided. The abatement system and / or abatement gas source can use the table to communicate with the gas source controller and / or other device to determine what recipe is being flowed to each connected chamber and identify the flow rate, timing, amount, selection, and / or other settings for one or more abatement gases needed to safely and completely abatement the vented gases. When multiple chambers are operating, the abatement system and / or abatement gas source can take into account the recipe and timing for each chamber venting gas to the combustor to ensure sufficient abatement gas is present at any given point in time.This allows different chambers to utilize different recipes and / or be operated out of sync with one another, as the abatement system and / or abatement gas source can determine the total flow rate and concentration of gas present at each inlet and / or combustor based on the recipe used in each chamber.

[0040]

[0042] In the foregoing description, for purposes of explanation, numerous details are presented in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details, or with additional details.

[0041]

[0043] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the technology. Therefore, the foregoing description should not be deemed to limit the scope of the technology.

[0042]

[0044] Where a range of values is provided, it is to be understood that each intervening value between the upper and lower limit of that range is specifically disclosed, to the smallest unit of the lower limit, unless the context clearly dictates otherwise. Any smaller ranges between any stated or unstated intervening value in a stated range, as well as any other stated or intervening value in that stated range, are also included. The upper and lower limits of such narrower ranges may individually be included or excluded from that range. Each range where either, neither, or both limits are included in this narrower range is also encompassed within the technology, even though there may be specifically excluded limits in the stated range. When a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0043]

[0045] As used in this specification and claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to an "area" includes a plurality of such areas, a reference to an "aperture" includes a reference to one or more apertures and equivalents thereof known to those skilled in the art, and so forth.

[0044]

[0046] Additionally, the terms "comprises," "comprising," "contains," "containing," "includes," and "including," when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A semiconductor processing system comprising: at least one gas source fluidly coupled to one or more processing chambers, the at least one gas source comprising a controller; and each processing chamber comprising an exhaust assembly, the exhaust assembly comprising: Foreline, and at least one gas source comprising a pump fluidly coupled to the foreline; at least one abatement system fluidly coupled to a downstream end of each pump; a plurality of gas exhaust lines, each gas exhaust line extending between a respective pump and the abatement system; at least one dilution gas source fluidly coupled to each gas exhaust line; at least one mass flow controller coupled between the at least one dilution gas source and each gas exhaust line; and at least one temperature sensor coupled to each gas exhaust line at a location between the respective pump and the abatement system; the at least one temperature sensor is communicatively coupled to the controller of the at least one gas source; The controller controls a flow of gas to at least one of the one or more processing chambers based on measurements from the at least one temperature sensor.

2. the at least one temperature sensor is communicatively coupled to the at least one mass flow controller; 10. The semiconductor processing system of claim 1, wherein the at least one mass flow controller controls a flow rate of dilution gas into at least one of the gas exhaust lines based on measurements from the at least one temperature sensor.

3. 10. The semiconductor processing system of claim 1, wherein the at least one mass flow controller increases the flow rate of dilution gas into at least one of the gas exhaust lines when a temperature measured by the at least one temperature sensor exceeds a predetermined threshold.

4. the at least one mass flow controller increases a flow rate of dilution gas into at least one of the gas exhaust lines when a temperature measured by the at least one temperature sensor exceeds a first threshold; 10. The semiconductor processing system of claim 1, wherein the controller shuts off gas flow to the at least one of the one or more processing chambers when the temperature measured by the at least one temperature sensor exceeds a second threshold that is higher than the first threshold.

5. 10. The semiconductor processing system of claim 1, wherein the controller shuts off gas flow to the at least one of the one or more processing chambers when a temperature measured by the at least one temperature sensor exceeds a predetermined threshold.

6. 10. The semiconductor processing system of claim 1, wherein each temperature sensor is coupled to an exterior surface of a respective one of said gas exhaust lines.

7. 10. The semiconductor processing system of claim 1, further comprising a plurality of heater jackets, each heater jacket covering a respective one of said temperature sensors.

8. 10. The semiconductor processing system of claim 1, wherein said at least one gas source independently controls said flow rate of said gas to each of said one or more processing chambers.

9. 10. The semiconductor processing system of claim 1, wherein said at least one mass flow controller independently controls the flow rate of dilution gas into each of said gas exhaust lines.

10. 1. A method of abating gas from a processing chamber, comprising: flowing a process gas into the processing chamber; Exhausting the process gas from the processing chamber through an exhaust assembly, the exhaust assembly comprising: Foreline, and evacuating the process gas with a pump fluidly coupled to the foreline; flowing a dilution gas into a gas exhaust line downstream of the pump, the dilution gas mixing with the process gas in the gas exhaust line; measuring the temperature of the gas exhaust line; and A method of abating gas from a processing chamber comprising: reducing a flow rate of the process gas into the processing chamber when the temperature exceeds a predetermined threshold.

11. 11. The method of abating gases from a processing chamber of claim 10, further comprising adjusting a flow rate of the dilution gas when the temperature exceeds a preset threshold that is lower than the predetermined threshold.

12. 11. The method of abating gases from a processing chamber of claim 10, further comprising flowing the diluent gas and the process gas into an abatement system.

13. 13. The method of abating gases from a processing chamber of claim 12, further comprising adjusting the flow rate of one or more abatement gases based on a chemical recipe being used in the processing chamber.

14. 11. The method of abating gas from a processing chamber of claim 10, wherein reducing the flow rate of the process gas comprises completely shutting off the supply of the process gas to the processing chamber.

15. 1. A method for abating gases from at least one processing chamber, comprising: flowing at least one process gas into a plurality of processing chambers; exhausting the process gas from each of the plurality of processing chambers through an exhaust assembly of each respective processing chamber, each exhaust assembly comprising: Foreline, a pump fluidly coupled to the foreline; and venting the process gas, including a gas exhaust line extending between the pump and an abatement system; flowing a dilution gas into each gas exhaust line downstream of each respective pump, the dilution gas mixing with the process gas in the gas exhaust line; Measuring the temperature of each gas exhaust line; and A method of abating gases from at least one processing chamber, comprising adjusting the flow rate of one or more gases when the temperature in a corresponding gas exhaust line exceeds a predetermined threshold.

16. 16. The method of claim 15, wherein the at least one process gas flowed into one of the plurality of processing chambers is different from the at least one process gas flowed into another one of the plurality of processing chambers.

17. 16. The method of claim 15, wherein adjusting the flow rate of the one or more gases comprises cutting off the supply of the at least one process gas to each one of the plurality of processing chambers while allowing the at least one process gas to continue flowing to at least one other processing chamber of the plurality of processing chambers.

18. 16. The method of claim 15, wherein adjusting the flow rate of the one or more gases comprises adjusting the flow rate of the dilution gas into the particular one of the gas exhaust lines when the temperature of the particular one of the gas exhaust lines exceeds a preset threshold that is lower than the predetermined threshold.

19. 16. The method of abating gases from at least one processing chamber of claim 15, wherein each gas exhaust line is coupled to a different inlet of the abatement system.

20. 16. The method of claim 15, further comprising adjusting the flow rate of one or more abatement gases at the inlet of the abatement system based on a chemical recipe used in a particular processing chamber associated with each one of the gas exhaust lines coupled to the inlet of the abatement system.

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