Chemically amplified positive photoresist compositions for improved pattern profile and enhanced etch resistance

Abstract

The present invention relates to a photoresist composition that can be exposed with a light source having a wavelength of 248 nm, and relates to a chemically amplified positive photoresist composition for improving pattern profile and enhancing etch resistance, which comprises a hydroxyl-containing phenolic polymer resin represented by compound 4, copolymerized with one of the compounds represented by formulas 1 to 3, selected as a monomer effective in improving etch resistance. Compared to conventional positive photoresists, this composition achieves a vertical profile and exhibits excellent etch resistance.

Description

[Technical Field]

[0001] The present invention relates to a chemically amplified positive photoresist composition for improving pattern profile and etch resistance, which comprises a phenolic polymer resin containing a hydroxyl group copolymerized with a novel monomer effective in etch resistance. [Background technology]

[0002] In recent years, with the advancement of semiconductor manufacturing technology, there has been a demand for miniaturization and high integration of semiconductor devices, leading to a demand for technology that can realize ultra-fine patterns with line widths of tens of nanometers or less. Technological advances for forming such ultra-fine patterns have been made possible by the development of light sources with smaller wavelengths, process technologies using light sources, and photoresists suitable for light sources. Photoresist is used in photolithography to form various patterns. Photoresist is a photosensitive resin that changes its solubility in a developer when exposed to light, allowing an image corresponding to the exposed pattern to be obtained. The photoresist pattern forming method includes a method using a negative tone developer (NTD, Negative Tone Development) and a method using a positive tone developer (PTD, Positive Tone Development). The pattern formation method using a negative developer is a method of forming a pattern by selectively dissolving and removing non-exposed regions with a negative developer, and the pattern formation method using a positive developer is a method of forming a pattern by selectively dissolving and removing exposed regions with a positive developer. Compared with pattern formation methods using positive developer solutions, the pattern formation method using a negative developer solution can realize reverse-phase patterns even in contact hole patterns and trench patterns that are difficult to form due to insufficient exposure dose, making it easier to form patterns when realizing the same pattern. Furthermore, since an organic solvent is used as a developer solution to remove unexposed portions, photoresist patterns can be formed more effectively. Meanwhile, a photolithography process using a photoresist composition generally includes the steps of coating a photoresist on a wafer, a soft baking process in which the coated photoresist is heated to evaporate the solvent, an imaging process using a light source passing through a photomask, a process in which a pattern is formed using a developer due to the difference in solubility between exposed and unexposed areas, and a process in which the pattern is etched to complete a circuit. The photoresist composition is composed of a photoacid generator that generates acid when irradiated with an excimer laser, a base resin, and other additives. The base resin has a structure with a hydroxyl group in a phenolic structure, and is generally a polystyrene polymer. The photoacid generator generates acid (H + Any of these can be used as long as it can generate a sulfonium salt, sulfonyldiazot, benzosulfonyl, iodine, chlorine, and carboxylic acid. In addition, the light sources mainly used in the above-mentioned process are in the wavelength range of 365 nm to 193 nm using i-line, KrF excimer laser, and ArF excimer laser light sources, and it is known that the shorter the wavelength, the finer the patterns that can be formed. Among these, KrF laser (248nm) photoresists continue to be a focus of research and development in pursuit of optical microfabrication, despite the subsequent development of ArF laser (193nm) systems. While the development of next-generation ArF photoresists is still lacking, the use of KrF photoresists offers significant cost savings in semiconductor mass production. The performance of KrF photoresists must also improve in response to these technological developments. For example, as higher integration requires thinner photoresists, there is a pressing need for photoresists with improved dry etching resistance. Other required characteristics include high resolution, a wide depth of focus (DOF), defect-free thin film formation, strong adhesion to the substrate, high contrast, high speed sensitivity, and chemical stability.

[0003] As mentioned above, prior patents relating to KrF photoresist technology include Korean Patent Publication No. 10-0047038 entitled "Chemical amplification type positive photoresist composition," Korean Patent Publication No. 10-1363842 entitled "Chemical amplification type positive photoresist composition and method for forming a resist pattern using the same," Korean Patent Publication No. 10-1204915 entitled "Photoresist polymer, photoresist composition containing the same, and method for forming a photoresist ... and Korean Patent Publication No. 10-1204915 entitled "Photoresist polymer, photoresist composition containing the same, and method for forming a photoresist pattern using the same." Korean Patent Publication No. 10-0273108, "Copolymer for producing photoresist and chemically amplified positive photoresist composition containing the same," Korean Patent Publication No. 10-1655947, "Negative photoresist composition for KrF laser having high resolution and high aspect ratio," Korean Patent Publication No. 10-1977886, "Chemically amplified positive photoresist composition for improving pattern profile," and Korean Patent Publication No. 10-0676801, "Resist material and pattern formation method," etc. As described in the above patent, KrF photoresists mainly use polyhydroxystyrene and polystyrene polymers as base polymers, which have good transmittance in the wavelength range of 248 nm to 365 nm, in order to improve resolution and sensitivity. Positive photoresists based on polyhydroxystyrene and polystyrene polymers have limitations in the range of usability in processes based on 248nm to 365nm light sources due to slope pattern shapes or footing phenomena, and as the photoresist thickness increases, the achievable resolution decreases, and there are also major issues such as process problems caused by issues such as insufficient etch resistance and insufficient adhesion depending on the type of underlying film. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a chemically amplified positive photoresist composition that not only has excellent pattern sensitivity, resolution, and dimensional stability, but also improves the pattern profile to be nearly vertical, and ultimately significantly improves the process margin by enhancing etch resistance. [Means for solving the problem]

[0005] To achieve the above object, the present invention provides a chemically amplified positive photoresist composition for improving pattern profile and etch resistance, which comprises a hydroxyl-containing phenolic polymer resin prepared by copolymerizing a novel monomer effective in improving etch resistance for a chemically amplified resist, represented by the following Chemical Formulas 1 to 3: [Chemical formula 1] [ka] [Chemical formula 2] [ka] [Chemical formula 3] [ka] In the present invention, the novel monomers and similar structures effective in improving etch resistance for resists, represented by Chemical Formulas 1 to 3, are readily available from a number of domestic and international suppliers. In the present invention, one of the compounds represented by the above chemical formulas 1 to 3 is selected as a monomer effective in improving etch resistance, and the hydroxyl-containing phenolic polymer resin copolymerized with this monomer is represented by the following chemical formula 4, and is characterized by having a weight average molecular weight of 1,000 to 400,000. In the present invention, the photoresist composition is characterized as a chemically amplified positive photoresist composition for improving pattern profile and etch resistance, comprising, relative to the total weight of the composition, 5 to 60 wt % of a hydroxyl group-containing phenolic polymer resin represented by the following Chemical Formula 4, in which one of the compounds represented by the above Chemical Formulas 1 to 3 is selected as a monomer effective in improving etch resistance and copolymerized therewith; 0.5 to 20 wt % of a photoacid generator; 0.01 to 5 wt % of an acid diffusion-blocking basic compound; 0.01 to 2 wt % of a surfactant; and the remainder being an organic solvent. [Chemical formula 4] [ka] (In the above structure, R is selected from the monomers represented by Chemical Formula 1 to Chemical Formula 3.) The phenolic polymer resin containing a hydroxyl group represented by the chemical formula 4 is characterized in that the copolymerization molar ratio a:b:c is 24.86-63.9:10.14-26.1:65-10. In the present invention, the photoacid generator may be a sulfonium salt, an iodonium salt, a sulfonyldiazomethane, an N-sulfonyloxyimide-type acid generator, or the like, and the types of compounds described below may be used alone or in combination of two or more. Sulfonium salts are salts of sulfonate and sulfonium cations, and examples of sulfonium cations include triphenylsulfonium, (4-tert-butoxyphenyl)diphenylsulfonium, bis(4-tert-butoxyphenyl)phenylsulfonium, tris(4-tert-butoxyphenyl)sulfonium, (3-tert-butoxyphenyl)diphenylsulfonium, bis(3-tert-butoxyphenyl)phenylsulfonium, tris(3-tert-butoxyphenyl)sulfonium, (3,4-ditert-butoxyphenyl)diphenylsulfonium, bis(3,4-ditert-butoxyphenyl)phenylsulfonium, tris(3,4-ditert-butoxyphenyl)sulfonium, diphenyl(4-thiophenoxyphenyl)sulfonium, (4-t Examples of sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoromethylphenylsulfonate, 2-tert-butoxycarbonylmethyloxyphenyl)diphenylsulfonium, tris(4-tert-butoxycarbonylmethyloxyphenyl)sulfonium, (4-tert-butoxyphenyl)bis(4-dimethylaminophenyl)sulfonium, tris(4-dimethylaminophenyl)sulfonium, 2-naphthyldiphenylsulfonium, dimethyl 2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium, 4-methoxyphenyldimethylsulfonium, trimethylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium, and tribenzylsulfonium. Examples of sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoromethyls ...Examples of iodonium salts include 2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate. Iodonium salts are salts of iodonium cations and sulfonates, such as diphenyliodonium, bis(4-tert-butylphenyl)iodonium, 4-tert-butoxyphenylphenyliodonium, and 4-methoxyphenylphenyliodonium, and examples of iodonium salts are salts of aryl iodonium cations and sulfonates, such as trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, and 2,2,2-trifluoroisopropyl methyl iodonate. Examples of the sulfonyldiazomethane include bis(ethylsulfonyl)diazomethane, bis(1-methylpropylsulfonyl)diazomethane, bis(2-methylpropylsulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(perfluoroisopropylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-methylphenylsulfonyl)diazomethane, bis(2,Examples of the photoacid generator include bissulfonyldiazomethanes and sulfonylcarbonyldiazomethanes such as bis(4-dimethylphenylsulfonyl)diazomethane, bis(2-naphthylsulfonyl)diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, and tert-butoxycarbonyl-4-methylphenylsulfonyldiazomethane. Examples of the N-sulfonyloxyimide photoacid generator include succinimide, naphthalenedicarboxylic acid imide, phthalic acid imide, and cyclohexyldicarboxylic acid imide. The imide skeleton of the imide, such as 5-norbornene-2,3-dicarboxylic acid imide, 5-norbornene-2,3-dicarboxylic acid imide, or 7-oxabicyclo[2.2.1]-5-heptene-2,3-dicarboxylic acid imide, is characterized by containing one or more selected from the group consisting of trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, etc.

[0006] In the present invention, examples of the acid diffusion-preventing basic compound include primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, nitrogen-containing compounds having a sulfonyl group, nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, alcoholic nitrogen-containing compounds, amide derivatives, and imide derivatives. The types of compounds described below can be used alone or in combination of two or more. Primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, and the like. Secondary aliphatic amines include dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, amine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N,N-dimethylmethylenediamine, N,N-dimethylethylenediamine, N,N-dimethyltetraethylenepentamine, etc.; tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, tricetylamine, N,N,N',N'-tetramethylmethylenediamine, N,N,N',N'-tetramethylethylenediamine, N,N,N',Examples of the aromatic amines and heterocyclic amines include N'-tetramethyltetraethylenepentamine, and examples of the mixed amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine, etc. Specific examples of the aromatic amines and heterocyclic amines include aniline derivatives (e.g., aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, N,N-dimethyltoluidine, etc.), diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (e.g., pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (e.g., oxazole, isoxazole, etc.), thiazole derivatives (e.g., thiazole, isothiazole, etc.), imidazole derivatives (e.g., imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazan derivatives, pyrroline derivatives (e.g., pyrroline, 2-methyl-1-pyrroline, etc.), pyrrolidine derivatives (e.g., pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone, etc.), imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (e.g., pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4-(1-butylpentyl)pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert- butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2-(1-ethylpropyl)pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (e.g., quinoline, 3-quinolinecarbonitrile, etc.), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,Examples of nitrogen-containing compounds having a carboxy group include aminobenzoic acid, indolecarboxylic acid, and amino acid derivatives (e.g., nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine, phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, and methoxyalanine). Examples of nitrogen-containing compounds having a sulfonyl group include 3-pyridinesulfonic acid and pyridinium p-toluenesulfonate. Examples of nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, 3-indolemethanol hydrate, monoethanolamine, diene Ethanolamine, triethanolamine, N-ethyldiethanolamine, N,N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 4-(2-hydroxyethyl)morpholine, 2-(2-hydroxyethyl)pyridine, 1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine, piperazine Examples of the amide derivatives include formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,These include N-dimethylacetamide, propionamide, benzamide, etc. The imide derivative is characterized by including one or more selected from the group consisting of phthalimide, succinimide, and maleimide.

[0007] In a preferred embodiment of the present invention, the surfactant is selected from the group consisting of polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene olein ether; polyoxyethylene alkyl aryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; polyoxyethylene polyoxypropylene block copolymers; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, and sorbitan monostearate; and nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate. Surfactants: F-Top EF301, EF303, EF352 (manufactured by Tochem Products Co., Ltd.), Megapack F171, F172, F173 (manufactured by Dainippon Ink and Chemicals Co., Ltd.), Fluorad FC430, FC431 (manufactured by Sumitomo 3M Ltd.), Asahiguard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfynol E1004, KH-10, KH-20, KH-30 and KH-40 (manufactured by Asahi Glass Co., Ltd.), organosiloxane polymers KP341, X-70-092, and X-70-093 (manufactured by Shin-Etsu Chemical Co., Ltd.), and acrylic acid- or methacrylic acid-based Polyflow No. 75 and No. 95 (manufactured by Kyoeisha Yushi Kagaku Kogyo Co., Ltd.), and among these, the present invention is characterized by containing at least one selected from the group consisting of FC430, Surflon S-381, Surfynol E1004, KH-20, and KH-30. [Effects of the Invention]

[0008] The present invention provides a chemically amplified positive photoresist composition that not only has excellent pattern sensitivity, resolution, and dimensional stability, but also improves the pattern profile to be nearly vertical, and also improves etch resistance, ultimately significantly improving process margins. DETAILED DESCRIPTION OF THE INVENTION

[0009] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one skilled in the art to which this invention belongs. Generally, the nomenclature used herein is well known and commonly used in the art. Throughout this specification, when a part "comprises" a certain element, this does not mean that it excludes other elements, but that it may further include other elements, unless specifically stated to the contrary. The "novel monomer effective in improving etch resistance" proposed in the present invention means a monomer structure that can improve etch resistance in the etching process that is performed in the subsequent process after the PEB (Post Exposure Bake) or HB (Hard Bake) process that is performed after the process of exposing to a light source of 248 nm to 365 nm. In the present invention, the term "photoresist" refers to a mixture of a polymer and a photosensitive agent, whose chemical properties change when exposed to light, and whose solubility in a specific solvent changes when exposed to light of a certain wavelength. Since there is a difference in the dissolution rate between the exposed and unexposed parts in the solvent, after a certain period of dissolution time, the undissolved parts remain, forming a pattern. The "photolithographic process" in this invention refers to a process in which, utilizing the properties of the photoresist described above, a mask engraved with a semiconductor design is placed between a light source and a photoresist film coated on a silicon wafer, and when the light source is turned on, the circuit engraved on the mask is transferred directly to the photoresist. In the present invention, "KrF" refers to a light source having a wavelength of 248 nm, and "i-Line" refers to a light source having a wavelength of 365 nm. One embodiment of the present invention provides a chemically amplified positive photoresist composition for improving pattern profile and etch resistance, which comprises a hydroxyl-containing phenolic polymer resin prepared by copolymerizing a novel monomer effective in improving etch resistance for a chemically amplified resist, represented by the following Chemical Formulas 1 to 3: [Chemical formula 1] [ka] [Chemical formula 2] [ka] [Chemical formula 3] [ka]

[0010] In a preferred embodiment of the present invention, one of the compounds represented by Formulas 1 to 3 is selected as a monomer effective in improving etch resistance, and the hydroxyl-containing phenolic polymer resin copolymerized with this monomer is represented by Formula 4 below. [Chemical formula 4] [ka] (In the above structure, R is selected from the monomers represented by Chemical Formula 1 to Chemical Formula 3.) In a preferred embodiment of the present invention, the phenolic polymer resin having a hydroxyl group represented by Chemical Formula 4 is characterized in that the copolymerization molar ratio a:b:c is 24.86-63.9:10.14-26.1:65-10. In a preferred embodiment of the present invention, the photoresist composition is a chemically amplified positive photoresist composition for improving pattern profile and etch resistance, comprising, relative to the total weight of the composition, 5 to 60 wt % of a hydroxyl group-containing phenolic polymer resin represented by the following Chemical Formula 4, copolymerized with one of the compounds represented by Chemical Formulas 1 to 3 selected as a monomer effective in improving etch resistance, 0.5 to 20 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion-blocking basic compound, 0.01 to 2 wt % of a surfactant, and the remainder being an organic solvent. In a preferred embodiment of the present invention, the hydroxyl-containing phenolic polymer resin represented by Chemical Formula 4, which contains the novel monomers effective in improving etch resistance represented by Chemical Formulas 1 to 3, preferably has a weight-average molecular weight of 1,000 to 400,000. If the weight-average molecular weight of the polymer resin is less than 1,000, it not only has no effect on the etch resistance of the photoresist, but also makes it impossible to form a vertical profile. Also, if the weight-average molecular weight of the polymer resin exceeds 400,000, even if it has an effect on etch resistance, it is undesirable because it can cause a reduction in process margins due to the accumulation of residual defects after pattern formation.

[0011] In a preferred embodiment of the present invention, the polymer resin is preferably contained in an amount of 5 to 60 wt % based on the total weight of the composition. If the polymer resin is used in an amount of less than 5 wt %, problems such as poor profile, scum, and poor etch resistance may occur, while if the polymer resin is used in an amount of more than 60 wt %, problems such as poor patterning due to insufficient development may occur. In a preferred embodiment of the present invention, the photoacid generator includes sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide-type acid generators, etc., and the types of compounds described below can be used alone or in combination of two or more. Sulfonium salts are salts of sulfonate and sulfonium cations, and examples of sulfonium cations include triphenylsulfonium, (4-tert-butoxyphenyl)diphenylsulfonium, bis(4-tert-butoxyphenyl)phenylsulfonium, tris(4-tert-butoxyphenyl)sulfonium, (3-tert-butoxyphenyl)diphenylsulfonium, bis(3-tert-butoxyphenyl)phenylsulfonium, tris(3-tert-butoxyphenyl)sulfonium, (3,4-ditert-butoxyphenyl)diphenylsulfonium, bis(3,4-ditert-butoxyphenyl)phenylsulfonium, tris(3,4-ditert-butoxyphenyl)sulfonium, diphenyl(4-thiophenoxyphenyl)sulfonium, (4-t Examples of sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoromethylphenylsulfonate, 2-tert-butoxycarbonylmethyloxyphenyl)diphenylsulfonium, tris(4-tert-butoxycarbonylmethyloxyphenyl)sulfonium, (4-tert-butoxyphenyl)bis(4-dimethylaminophenyl)sulfonium, tris(4-dimethylaminophenyl)sulfonium, 2-naphthyldiphenylsulfonium, dimethyl 2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium, 4-methoxyphenyldimethylsulfonium, trimethylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium, and tribenzylsulfonium. Examples of sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoromethyls ...Examples of iodonium salts include 2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate. Iodonium salts are salts of iodonium cations and sulfonates, such as diphenyliodonium, bis(4-tert-butylphenyl)iodonium, 4-tert-butoxyphenylphenyliodonium, and 4-methoxyphenylphenyliodonium, and examples of iodonium salts are salts of aryl iodonium cations and sulfonates, such as trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, and 2,2,2-trifluoroisopropyl methyl iodonate. Examples of the sulfonyldiazomethane include bis(ethylsulfonyl)diazomethane, bis(1-methylpropylsulfonyl)diazomethane, bis(2-methylpropylsulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(perfluoroisopropylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-methylphenylsulfonyl)diazomethane, bis(2,Examples of suitable photoacid generators include bissulfonyldiazomethanes and sulfonylcarbonyldiazomethanes, such as bis(4-dimethylphenylsulfonyl)diazomethane, bis(2-naphthylsulfonyl)diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, and tert-butoxycarbonyl-4-methylphenylsulfonyldiazomethane. Examples of N-sulfonyloxyimide photoacid generators include succinimide, naphthalenedicarboxylic acid imide, phthalic acid imide, and cyclohexyldicarboxylic acid. The imide skeleton, such as 5-norbornene-2,3-dicarboxylic acid imide, 5-norbornene-2,3-dicarboxylic acid imide, 7-oxabicyclo[2.2.1]-5-heptene-2,3-dicarboxylic acid imide, and one or more selected from the group consisting of trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate, may be included.

[0012] The photoacid generator is preferably contained in an amount of 0.5 to 20 wt % based on the total weight of the composition. If the photoacid generator is used in an amount of less than 0.05 wt %, the angle of the pattern inclined surface may become less than 90° due to insufficient acid generated, while if the photoacid generator is used in an amount of more than 20 wt %, the photoacid generator may absorb light from the exposure source, reducing transmittance and causing pattern defects such as failure to define. In a preferred embodiment of the present invention, examples of the acid diffusion-preventing basic compound include primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, nitrogen-containing compounds having a sulfonyl group, nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, alcoholic nitrogen-containing compounds, amide derivatives, and imide derivatives. The types of compounds described below can be used alone or in combination of two or more. Primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, and the like. Secondary aliphatic amines include dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, amine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N,N-dimethylmethylenediamine, N,N-dimethylethylenediamine, N,N-dimethyltetraethylenepentamine, etc.; tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, tricetylamine, N,N,N',N'-tetramethylmethylenediamine, N,N,N',N'-tetramethylethylenediamine, N,N,N',Examples of the aromatic amines and heterocyclic amines include N'-tetramethyltetraethylenepentamine, and examples of the mixed amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine, etc. Specific examples of the aromatic amines and heterocyclic amines include aniline derivatives (e.g., aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, N,N-dimethyltoluidine, etc.), diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (e.g., pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (e.g., oxazole, isoxazole, etc.), thiazole derivatives (e.g., thiazole, isothiazole, etc.), imidazole derivatives (e.g., imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazan derivatives, pyrroline derivatives (e.g., pyrroline, 2-methyl-1-pyrroline, etc.), pyrrolidine derivatives (e.g., pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone, etc.), imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (e.g., pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4-(1-butylpentyl)pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert- butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2-(1-ethylpropyl)pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (e.g., quinoline, 3-quinolinecarbonitrile, etc.), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,Examples of nitrogen-containing compounds having a carboxy group include aminobenzoic acid, indolecarboxylic acid, and amino acid derivatives (e.g., nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine, phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, and methoxyalanine). Examples of nitrogen-containing compounds having a sulfonyl group include 3-pyridinesulfonic acid and pyridinium p-toluenesulfonate. Examples of nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, 3-indolemethanol hydrate, monoethanolamine, diene Ethanolamine, triethanolamine, N-ethyldiethanolamine, N,N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 4-(2-hydroxyethyl)morpholine, 2-(2-hydroxyethyl)pyridine, 1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine, piperazine Examples of the amide derivatives include formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,These include N-dimethylacetamide, propionamide, benzamide, etc. The imide derivative is characterized by including one or more selected from the group consisting of phthalimide, succinimide, and maleimide.

[0013] The acid diffusion preventing basic compound is preferably contained in an amount of 0.01 to 5 wt % based on the total weight of the composition. If the acid diffusion preventing basic compound is used in an amount less than 0.01 wt %, excessive acid generation may occur, resulting in pattern defects such as pattern defects (LWR, LER) on the pattern wall or edge, while if the acid diffusion preventing basic compound is used in an amount more than 5 wt %, pattern formation may become impossible. In a preferred embodiment of the present invention, the surfactant is selected from the group consisting of polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene olein ether; polyoxyethylene alkyl aryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; polyoxyethyleneoxypropylene block copolymers; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, and sorbitan monostearate; and nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate. surfactants, F-Top EF301, EF303, EF352 (manufactured by Tochem Products Co., Ltd.), Megapack F171, F172, F173 (manufactured by Dainippon Ink and Chemicals Co., Ltd.), Fluorad FC430, FC431 (manufactured by Sumitomo 3M Ltd.), Asahiguard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfynol E1004, KH-10, KH-20, KH-30 and KH-40 (manufactured by Asahi Glass Co., Ltd.), organosiloxane polymers KP341, X-70-092, and X-70-093 (manufactured by Shin-Etsu Chemical Co., Ltd.), and acrylic acid- or methacrylic acid-based Polyflow No. 75 and No. 95 (manufactured by Kyoeisha Yushi Kagaku Kogyo Co., Ltd.), and among these, the present invention is characterized by containing at least one selected from the group consisting of FC430, Surflon S-381, Surfynol E1004, KH-20, and KH-30. In a preferred embodiment of the present invention, the solvent is selected from the group consisting of butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl acetate, methyl ethyl ketone, methyl amyl ketone, cyclohexanone, cyclopentanone, 3-ethoxyethyl propionate, 3-ethoxymethyl propionate, 3-methoxymethyl propionate, methyl acetoacetate, ethyl acetoacetate, diacetone alcohol, methyl pyruvate, ethyl pyruvate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether propionate, and propylene glycol monomethyl ether. Examples of the usable esters include propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, tetramethylene sulfone, and the like.

[0014] Meanwhile, in a preferred embodiment of the present invention, a new monomer effective in improving etch resistance is introduced and introduced in an appropriate amount to have an optimal copolymerization molar ratio range, thereby improving profile and process merger compared to existing KrF positive photoresists. The thickness of the chemically amplified positive photoresist composition can be 2,000 Å to 200,000 Å depending on the type and amount of solvent used. As described above, the present invention provides a chemically amplified positive photoresist composition having an optimum copolymerization molar ratio range by introducing a novel monomer effective in improving etch resistance and introducing an appropriate amount thereof to improve the profile and process margin compared to conventional KrF positive photoresists. The thickness of the chemically amplified positive photoresist composition can obtain a vertical profile depending on the exposure energy by adding the novel monomer effective in improving etch resistance, represented by Chemical Formulas 1 to 3, and is effective in improving etch resistance and providing a process margin compared to conventional KrF photoresists. [Example] The present invention will be described in more detail below with reference to examples. It will be obvious to those skilled in the art that these examples are merely illustrative of the present invention and should not be construed as limiting the scope of the present invention. A positive photoresist composition for KrF excimer laser was prepared using a phenolic polymer resin (Chemical Formula 4, where R is Chemical Formula 1) with a weight-average molecular weight of 16,100 as the base resin. The components a, b, and c, which determine the copolymerization molar ratio, and other photoresist components were combined as shown in Table 1 below. The prepared composition was coated on a silicon wafer using a spin coater and soft-baked at 100°C for 90 seconds, after which the target thickness of 0.4 μm was confirmed. After exposure with a 248 nm excimer laser scanner, the wafer was baked (PEB) at 110°C for 90 seconds, followed by development in 2.38% tetramethylammonium hydroxide to form a pattern. In addition, to evaluate the etching characteristics of the wafers obtained in Examples 1 to 12 below, the etch resistance was evaluated using an inductively coupled plasma reactive ion etching (ICP-RIE) device. The remaining ingredients, excluding the base resin, are listed below. PAG1: 10-Camphorsulfonate (4-butoxyphenyl)diphenylsulfonium PAG2: 4-(4'-methylphenylsulfonyloxy)phenylsulfonate (4-tert-butylphenyl)diphenylsulfonium Acid diffusion prevention basic compound: Tris(2-methoxyethyl)amine Surfactant A: FC-430 Surfactant B: Surflon S-38 Solvent A: Propylene glycol methyl ether acetate Solvent B: Ethyl lactate [Table 1]

[0015] (The copolymerization ratio (a:b:c) is a ratio of monomer a to monomer b in the polymer resin, which is maintained constant at approximately 2.45, while the sum of the ratio of monomer a and the ratio of monomer b is gradually decreased and the ratio of monomer c is gradually increased from Example 1 to Example 12.) Characteristic measurements The characteristics of the chemically amplified positive photoresist compositions for improving pattern profile and etch resistance, which contain phenolic polymer resins containing novel monomers effective in improving pattern profile and etch resistance, prepared as in Examples 1 to 12 and Comparative Example 1, were measured. Sensitivity, resolution, and profile shape were measured using a critical dimension scanning electron microscope (CD-SEM), which can observe the critical dimension of the pattern, and confirmed by observing the minimum line width (resolution) based on L / S (Line, Space). Sensitivity was also confirmed by measuring the energy at which the minimum line width (resolution) could be confirmed. The optimal exposure dose (sensitivity: Eop) was defined as the exposure dose that defined the top and bottom of 0.15 μm size lines and spaces at a 1:1 ratio. The minimum line width of the lines and spaces separated based on this exposure dose was defined as the resolution of the resist to be evaluated. The shape of the photoresist pattern was determined by observing the cross section of the resist using a scanning electron microscope. The PED stability of the resist was evaluated by exposing it to the optimum exposure dose, leaving it for 24 hours, then performing PEB (post exposure bake), and measuring the degree of line width variation. The smaller this variation, the better the PED stability. The results of such measurements are shown in Table 2 below. [Table 2] (*: Relative evaluation was performed with the etch resistance of Comparative Example 1 normalized to 1.) As can be seen from Table 1, the evaluation results for Examples 1 to 12, which are evaluated by increasing the ratio of the novel monomer effective in improving etch resistance contained in the base resin, show that the etch resistance is improved compared to Comparative Example 1, and the PED stability after 24 hours is also improved. Furthermore, when compared with the results of Comparative Example 1, it can be seen that the vertical pattern profile is also improved, and optimal results are obtained when the copolymerization molar ratio of the novel monomer effective in improving etch resistance is 15 to 25. When the copolymerization molar ratio of the new monomer that is effective for etch resistance is less than 15, the shape of the pattern profile is confirmed to be abnormal, negative slope, and when the copolymerization molar ratio of the new monomer is 30 or more, it is confirmed that although it is effective for etch resistance and PED stability after 24 hours, it is ineffective for sensitivity and resolution.

[0016] As a result, it was confirmed that when the novel monomers effective in improving etch resistance of Formulas 1 to 3 are contained in an optimal content in a copolymerization molar ratio range of 15 to 25, a photoresist composition for KrF light sources having an optimal effect in improving etch resistance, which includes a polymer resin containing the novel monomers effective in improving etch resistance, can be provided. Any simple variations or modifications of the present invention can be easily implemented by a person having ordinary skill in the art, and any such variations or modifications can be considered to be included in the scope of the present invention.

Claims

1. A photoresist composition that can be exposed to a light source having a wavelength of 248 nm, A chemically amplified positive photoresist composition for improving pattern profile and etch resistance, comprising a phenolic polymer resin having a hydroxyl group represented by the following formula 4, copolymerized with one of the compounds represented by the following formulas 1 to 3 selected as a monomer effective in improving etch resistance: [Chemical formula 1] 【Chemical 1】 [Chemical formula 2] 【Chemistry 2】 [Chemical formula 3] 【Chemistry 3】 [Chemical formula 4] 【Chemistry 4】 (In the above structure, R is selected from the monomers represented by Chemical Formulas 1 to 3.)

2. 10. The chemically amplified positive photoresist composition for improving pattern profile and etch resistance according to claim 1, wherein the photoresist composition comprises, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.5 to 20 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion-blocking basic compound, 0.01 to 2 wt % of a surfactant, and the remainder being an organic solvent.

3. 3. The chemically amplified positive photoresist composition for improving pattern profile and etch resistance according to claim 2, wherein the polymer resin is a phenolic polymer resin containing a hydroxyl group represented by Chemical Formula 4, and the copolymerization molar ratio a:b:c is 24.86 to 63.9:10.14 to 26.1:65 to 10.

4. The photoacid generator is selected from the group consisting of triphenylsulfonium, (4-tert-butoxyphenyl)diphenylsulfonium, bis(4-tert-butoxyphenyl)phenylsulfonium, tris(4-tert-butoxyphenyl)sulfonium, (3-tert-butoxyphenyl)diphenylsulfonium, bis(3-tert-butoxyphenyl)phenylsulfonium, tris(3-tert-butoxyphenyl)sulfonium, (3,4-ditert-butoxyphenyl)diphenylsulfonium, bis(3,4-ditert-butoxyphenyl)diphenylsulfonium, phenylsulfonium, tris(3,4-ditert-butoxyphenyl)sulfonium, diphenyl(4-thiophenoxyphenyl)sulfonium, (4-tert-butoxycarbonylmethyloxyphenyl)diphenylsulfonium, tris(4-tert-butoxycarbonylmethyloxyphenyl)sulfonium, (4-tert-butoxyphenyl)bis(4-dimethylaminophenyl)sulfonium, tris(4-dimethylaminophenyl)sulfonium, 2-naphthyldiphenylsulfonium, dimethyl 2-naphthylsulfonium, 4-hydroxybenzoyl hydroxyphenyl dimethyl sulfonium, 4-methoxyphenyl dimethyl sulfonium, trimethyl sulfonium, 2-oxocyclohexylcyclohexylmethyl sulfonium, trinaphthyl sulfonium, tribenzyl sulfonium, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctane sulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, Benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, diphenyliodonium, bis(4-tert-butylphenyl)iodonium, 4-tert-butoxyphenylphenyliodonium, 4-methoxyphenylphenyliodonium, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, 4-(4-toluenesulfonyloxy)benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, bis(ethylsulfonyl)diazomethane, bis(1-methylpropylsulfonyl)diazomethane, bis(2-methylpropylsulfonyl)diazomethane, bis(1,1-dimethylethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(perfluoroisopropylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(4-methylphenylsulfonyl)diazomethane benzene, bis(2,4-dimethylphenylsulfonyl)diazomethane, bis(2-naphthylsulfonyl)diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl 2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, tert-butoxycarbonyl-4-methylphenylsulfonyldiazomethane, succinimide, naphthalenedicarboxylic acid imide, phthalic acid imide, cyclohexyldicarboxylic acid imide, 5-norbornene-2,3-dicarboxylic acid imide, 7-oxabicyclo[2.2.1]-5-heptene-2,3-dicarboxylic acid imide, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,The chemically amplified positive photoresist composition for improving pattern profile and etch resistance according to claim 2, characterized in that the photoresist is at least one selected from the group consisting of 2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, and the like.

5. The acid diffusion preventing basic compound may be ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert-amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, dimethylamine, diethylamine, amine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N,N-dimethylmethylenediamine, N,N-dimethylethylenediamine, N,N-dimethyltetraethylenepentamine, trimethylamine, triethylamine, tri-n-propylamine amine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, tricetylamine, N,N,N',N'-tetramethylmethylenediamine, N,N,N',N'-tetramethylethylenediamine, N,N,N',N'-tetramethyltetraethylenepentaamine amine, dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N,N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-dinitroaniline, N,N-dimethyltoluidine, diphenyl(p-tolyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, oxazole, isoxazole, thiazole, isothiazole, imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, pyrazole derivatives, furazan derivatives, pyrroline, 2-methyl-1-pyrroline, pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone, imidazoline derivatives, imidazolidine derivatives, pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4-(1-butylpentyl)pyridine, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methylpyridine, ... butyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2-(1-ethylpropyl)pyridine, aminopyridine, dimethylaminopyridine, pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline, 3-quinolinecarbonitrile, isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives, aminobenzoic acid, indolecarboxylic acid, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine, phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine, 3-pyridine sulfonic acid, p-toluene Pyridinium sulfonate, 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, 3-indole methanol hydrate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N,N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 4-(2-hydroxyethyl)morpholine, 2- (2-hydroxyethyl)pyridine, 1-(2-hydroxyethyl)piperazine, 1-[2-(2-hydroxyethoxy)ethyl]piperazine, piperidineethanol, 1-(2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)-2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1,2-propanediol, 8-hydroxyeurolidine, 3-quinuclidinol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-methyl-2-pyrrolidineethanol, The chemically amplified positive photoresist composition for improving pattern profile and etch resistance according to claim 2, characterized in that the photoresist is at least one selected from the group consisting of diethyl ether, N-(2-hydroxyethyl)phthalimide, N-(2-hydroxyethyl)isonicotinamide, formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N,N-dimethylacetamide, propionamide, benzamide, phthalimide, succinimide, maleimide, and the like.

6. The surfactants include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene olein ether, polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene ...laurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostea Polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, Eftop EF301, EF303, EF352, Megapack F171, F172, F173, Fluorad FC430, FC431, Asahiguard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfynol E1004, KH-10, KH-20, KH-30, KH-40, organosiloxane polymer KP341, X-70-092, X-70-093, acrylic acid-based or methacrylic acid-based Polyflow No. 75, No.

3. The chemically amplified positive photoresist composition for improving pattern profile and etch resistance according to claim 2, wherein the photoresist is at least one selected from the group consisting of 95, 96, 97, 98, 99, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 99, 100, 101, 102, 103,

7. The organic solvent may be butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl acetate, methyl ethyl ketone, methyl amyl ketone, cyclohexanone, cyclopentanone, 3-ethoxyethyl propionate, 3-ethoxymethyl propionate, 3-methoxymethyl propionate, methyl acetoacetate, ethyl acetoacetate, diacetone alcohol, methyl pyruvate, ethyl pyruvate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol 3. The chemically amplified positive photoresist composition for improving pattern profile and etch resistance as claimed in claim 2, characterized in that the photoresist is at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 3-methyl-3-methoxybutanol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, tetramethylene sulfone, and the like.

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