Substrate processing method

Abstract

The present invention provides a method for treating a substrate, according to one embodiment, the method includes a first step of supplying a process gas to a chamber, exciting the process gas to react with a specific film formed on a substrate to generate a reactant, and a second step of supplying a dissociation gas to the chamber, exciting the dissociation gas to remove the reactant from the substrate.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method, and more particularly to a substrate processing method for removing a hard mask film formed on a substrate. [Background technology]

[0002] Generally, semiconductor devices can be manufactured through the unit processes of photolithography, etching, deposition, and / or ion implantation. The photolithography process is a process of forming a photoresist film on a substrate. The photoresist film can function as a mask pattern that selectively exposes the substrate. In addition, a hard mask film can be formed under the photoresist film. The hard mask film can perform functions such as preventing the destruction of circuit patterns formed on the substrate. The photoresist film and hard mask film can be sequentially removed from the substrate in the same manner as stripping after performing the ion implantation or etching process.

[0003] The recent trend toward an increase in etching targets and finer patterns with high selectivity has led to an increase in the etching resistance of hard mask layers. For example, various impurities (e.g., carbon) can be added to the hard mask layer to improve the line roughness of the hard mask layer profile and simultaneously improve the etching resistance. However, adding impurities to the hard mask layer in this manner makes it difficult to easily remove the hard mask layer from the substrate after the etching process is completed. Specifically, impurities added to the hard mask layer can be oxidized during the process of removing the hard mask layer. The oxidized impurities have a very high boiling point, making them difficult to remove in subsequent processing steps.

[0004] Furthermore, if a higher temperature and a higher density plasma are generated to remove the impurity-doped hard mask layer on the substrate, not only the hard mask layer but also the insulating film formed on the substrate may be damaged. If the insulating film formed on the substrate with a high selectivity is damaged, the yield of the substrate may be reduced. Furthermore, even if a strong plasma is applied to the substrate, the impurity-doped hard mask layer is difficult to remove from the substrate. If the hard mask layer remains on the substrate, the efficiency of substrate processing may be reduced when performing subsequent processes. DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0005] [Technical issues] An object of the present invention is to provide a substrate processing method that can process substrates efficiently.

[0006] Another object of the present invention is to provide a substrate processing method capable of efficiently removing a hard mask film formed on a substrate.

[0007] Another object of the present invention is to provide a substrate processing method capable of efficiently removing a hard mask film containing a specific material while minimizing damage to an insulating film formed on a substrate.

[0008] The problems to be solved by the present invention are not limited to the above-mentioned problems, and problems not mentioned will be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the accompanying drawings. [Means for solving the problem]

[0009] [Technical solution] The present invention provides a method for treating a substrate, according to one embodiment, the method includes a first step of supplying a process gas to a chamber, exciting the process gas to react with a specific film formed on a substrate to generate a reactant, and a second step of supplying a dissociation gas to the chamber, exciting the dissociation gas to remove the reactant from the substrate.

[0010] According to one embodiment, the process gas may include a first gas that reacts with the specific film formed on the substrate, and a second gas that reacts with the surface of the film formed on the substrate to form a protective film on the surface or to etch the specific film.

[0011] According to one embodiment, the dissociated gas may further remove the protective film from the substrate.

[0012] According to one embodiment, the first and second steps are performed sequentially in one cycle and may be repeated multiple times.

[0013] According to one embodiment, the first gas may include CF4, SF6, Cl2, or HBr, the second gas may include O2, and the dissociation gas may include an inert gas.

[0014] According to one embodiment, the reactant may be vaporized at a set temperature in the range of 100 to 150 degrees Celsius.

[0015] According to one embodiment, a chuck supporting a substrate in the chamber in the first step may be maintained at the set temperature, and a bias power may be applied to the chuck in the second step.

[0016] According to one embodiment, the second step may be performed prior to the first step.

[0017] According to an embodiment, the specific layer may be a hard mask layer.

[0018] According to one embodiment, the hard mask layer may include a tungsten-containing additive and a carbon layer.

[0019] The present invention also provides a substrate processing method for removing a hard mask film formed on a substrate. According to one embodiment, the substrate processing method includes supplying a first gas to a chamber, exciting the first gas to react with the hard mask film formed on the substrate to generate a reactant, and supplying a second gas different from the first gas to the chamber, exciting the second gas to etch the hard mask film or react with an insulating film formed on the substrate to generate a protective film on a surface of the insulating film, wherein the first gas and the second gas can be supplied to the chamber simultaneously.

[0020] According to one embodiment, the reactant may be volatilized and removed from the substrate at a set temperature in the range of 100 to 150 degrees Celsius.

[0021] According to an embodiment, when the first gas is supplied to the chamber, the temperature inside the chamber may be maintained at the set temperature.

[0022] According to one embodiment, after the first gas and the second gas are supplied to the chamber, a dissociation gas different from the first gas and the second gas is supplied to the chamber, and the dissociation gas is excited to remove the reactant and the protective film from the substrate.

[0023] According to one embodiment, the method is performed in one cycle of supplying the first gas and the second gas, followed by supplying the dissociation gas, and the cycle may be repeated multiple times.

[0024] According to an embodiment, before the first gas and the second gas are supplied to the chamber, a dissociation gas different from the first gas and the second gas may be supplied to the chamber.

[0025] According to one embodiment, the first gas may include CF4, SF6, Cl2, or HBr, the second gas may include O2, and the dissociation gas may include an inert gas.

[0026] According to one embodiment, the hard mask layer may include a tungsten-containing additive and a carbon layer.

[0027] The present invention also provides a method for treating a substrate including an insulating film formed by alternating nitride and oxide films and a hard mask film formed on the insulating film. According to one embodiment, the substrate treating method includes a main strip step in which a first gas including CF4, SF6, Cl2, or HBr is excited in a chamber to react with the hard mask film formed on the substrate to generate a reactant, and a second gas including O2 is excited in the chamber to either etch the hard mask film or react with a surface of the insulating film to generate a protective film, and an over strip step in which, after the main strip step, a dissociation gas including an inert gas is supplied to the chamber while applying bias power to a chuck supporting the substrate in the chamber to remove the reactant and the protective film from the substrate, wherein the hard mask film includes an additive and a tungsten-doped carbon layer.

[0028] According to one embodiment, the reactant may be vaporized at a set temperature in the range of 100 to 150 degrees Celsius. [Effects of the Invention]

[0029] [Beneficial Effects] According to one embodiment of the present invention, substrates can be processed efficiently.

[0030] Furthermore, according to an embodiment of the present invention, the hard mask film formed on the substrate can be efficiently removed.

[0031] Furthermore, according to an embodiment of the present invention, it is possible to efficiently remove a hard mask film containing a specific material while minimizing damage to an insulating film formed on a substrate.

[0032] Furthermore, according to one embodiment of the present invention, a substrate is processed to achieve high selectivity using a hard mask film doped with a specific material, and the hard mask film doped with a specific material can be easily removed from the substrate.

[0033] The effects of the present invention are not limited to those described above, and effects not mentioned will be clearly understood by those skilled in the art to which the present invention pertains from this specification and the accompanying drawings. [Brief explanation of the drawings]

[0034] [Figure 1] FIG. 1 is a schematic view of a substrate processing apparatus in which a substrate processing method according to an embodiment of the present invention is performed. [Figure 2] FIG. 2 is a diagram illustrating a substrate being processed in a substrate processing method according to an embodiment of the present invention. [Figure 3] FIG. 3 is a flowchart of a substrate processing method according to an embodiment of the present invention. [Figure 4] FIG. 4 is a diagram showing a schematic view of a substrate being processed in the main strip step according to an embodiment of FIG. [Figure 5] FIG. 5 is an enlarged view of part A in FIG. [Figure 6] FIG. 6 is a table showing the characteristics of reactants produced in the main strip step according to one embodiment of FIG. [Figure 7] FIG. 7 is a diagram illustrating a substrate being processed in the over-strip step according to an embodiment of FIG. [Figure 8] FIG. 8 is an enlarged view of part B in FIG. [Figure 9] FIG. 9 is a flowchart of a substrate processing method according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0035] [Best Mode for Carrying Out the Invention] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various ways, and the scope of the present invention should not be construed as being limited to the embodiments described below. These embodiments are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

[0036] Terms such as "first" and "second" may be used to describe various components, but the components should not be limited by these terms. These terms may be used to distinguish one component from another. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component, without departing from the scope of the present invention.

[0037] FIG. 1 is a schematic view of a substrate processing apparatus in which a substrate processing method according to an embodiment of the present invention is performed.

[0038] Referring to FIG. 1, a substrate processing apparatus 1 can perform a substrate processing method according to an embodiment of the present invention.

[0039] A substrate processing apparatus 1 according to an embodiment may perform a predetermined process on a substrate W using plasma. The substrate W processed in the substrate processing apparatus 1 according to an embodiment may have a photoresist film removed.

[0040] The substrate processing apparatus 1 according to one embodiment can strip a thin film from a substrate (W). The thin film can be various types of films such as an oxide film, a nitride film, a silicon oxide film, a silicon nitride film, a polysilicon film, and a hard mask film. Alternatively, the thin film can be a native oxide film or a chemically generated oxide film. For example, the substrate processing apparatus 1 can strip a hard mask film formed on the substrate (W). A detailed description of the substrate (W) processed by the substrate processing apparatus 1 will be provided later.

[0041] The substrate processing apparatus 1 may include a processing section 10 and a plasma generating section 20. The processing section 10 processes a substrate (W). The plasma generating section 20 generates plasma.

[0042] The processing unit 10 may include a housing 100 and a chuck 120. The housing 100 has a processing space 101. The processing space 101 functions as a space for processing a substrate (W). The substrate (W) may be positioned in the processing space 101. The housing 100 may be connected to a plasma chamber 200, which will be described later. The top of the housing 100 may be open. Thus, the processing space 101 is connected to a plasma generation space 201, which will be described later. In addition, an exhaust unit (not shown) may be connected to the housing 100. The atmosphere within the processing space 101 may be exhausted to the outside of the processing space 101 by the exhaust unit (not shown).

[0043] The chuck 120 is located within the processing space 101. The chuck 120 supports a substrate (W). The chuck 120 may be an ESC that supports the substrate (W) using electrostatic force. A heater (not shown) may be disposed inside the chuck 120. The heater (not shown) may heat the chuck 120. The heater (not shown) may heat the chuck 120 to increase the temperature of the substrate (W) supported by the chuck 120. In addition, the chuck 120 may receive a voltage from a power supply module (not shown). According to one embodiment, the chuck 120 may receive a bias voltage from the power supply module (not shown).

[0044] Plasma is generated in the plasma generating unit 20. The plasma generating unit 20 may include a plasma chamber 200, a gas supply unit 220, and a plasma source (not shown).

[0045] The plasma chamber 200 has an internal space. The internal space may function as a plasma generation space 201 where plasma is generated. The plasma chamber 200 may have an open top and bottom. The open bottom of the plasma chamber 200 is connected to the processing space 101 described above. The open top of the plasma chamber 200 may be sealed by a gas supply port 210.

[0046] The gas supply unit 220 may be connected to the gas supply port 210. The gas supply unit 220 may supply gas to the plasma generation space 201. The gas supplied to the plasma generation space 201 may be excited by a plasma source (not shown) described below.

[0047] According to an embodiment, the gas supply unit 220 may supply a process gas and a dissociation gas. The process gas may include a first gas and a second gas.

[0048] According to one embodiment, the first gas may be a gas that chemically reacts with a specific film formed on the substrate (W). For example, the specific film formed on the substrate (W) may be a hard mask film. According to one embodiment, the first gas may include CF4, SF6, Cl2, or HBr. That is, the first gas may include a halogen-based gas.

[0049] According to one embodiment, the second gas may be a gas that etches a specific film (e.g., a hard mask film) formed on the substrate (W). Also, the second gas may be a gas that chemically reacts with thin films formed on the substrate (W). For example, the second gas may be a gas that reacts with an insulating film formed on the substrate (W). According to one embodiment, the second gas may include O2.

[0050] According to one embodiment, the dissociation gas may be a gas that physically reacts with thin films (such as a hard mask film, an oxide film, or a nitride film) formed on the substrate (W). For example, the dissociation gas may physically react with a hard mask film formed on the substrate (W). The dissociation gas may also physically react with reactants and protective films, which will be described in detail below. That is, according to one embodiment, the dissociation gas may be a gas that breaks the bonds formed by compounds. According to one embodiment, the dissociation gas may include an inert gas. For example, the dissociation gas may include hydrogen (H), deuterium, tritium, argon (Ar), Xe, Xr, etc.

[0051] The plasma source (not shown) generates plasma. According to one embodiment, the plasma source (not shown) may be an inductively coupled plasma (ICP) formed with an antenna. However, the plasma source is not limited thereto and may be modified into various devices capable of generating plasma, such as a capacitively coupled plasma (CCP) or a microwave plasma.

[0052] A plasma source (not shown) can apply high frequency power to the plasma generation space 201. The high frequency power applied to the plasma generation space 201 generates an electric field in the plasma generation space 201. The gas supplied to the plasma generation space 201 can obtain energy necessary for ionization from the electric field generated in the plasma generation space 201 and be excited into a plasma state.

[0053] FIG. 2 is a diagram schematically illustrating a substrate being processed by a substrate processing method according to an embodiment of the present invention.

[0054] Referring to FIG. 2, the substrate (W) according to one embodiment of the present invention may be a substrate (W) on which all processes have been completed. As described above, the substrate (W) according to one embodiment may be in a state where the photoresist film has been removed. According to one embodiment, thin films may be formed on the substrate (W) in a multi-layer structure. According to one embodiment, an insulating film 300, which is an interlayer insulating film, and a hard mask film 400 may be formed on the substrate (W). According to one embodiment of the present invention, the insulating film 300 and the hard mask film 400 may be sequentially stacked on the substrate (W).

[0055] According to one embodiment, the insulating film 300 may include a silicon oxide film and a silicon nitride film. The insulating film 300 may be stacked on the upper side of the substrate (W). For example, the insulating film 300 may include a silicon oxide film and a silicon nitride film stacked one on top of the other in a bottom-to-top direction. However, the insulating film 300 is not limited thereto, and may further include a native oxide film, a chemically generated oxide film, a polysilicon film, etc. Furthermore, a plurality of pores may be formed in the insulating film 300 to reduce the dielectric constant.

[0056] The hard mask film 400 may be located on the insulating film 300. According to an embodiment, the hard mask film 400 may include an additive and a carbon layer. According to an embodiment, the hard mask film 400 may be doped with tungsten (Wolfram) as an additive. Also, the hard mask film 400 may be doped with boron (Boron) as an additive. According to an embodiment, the hard mask film 400 may be boron-doped silicon, tungsten ACL, AIOC (ceramic carbon), WBC, etc.

[0057] FIG. 3 is a flowchart of a substrate processing method according to an embodiment of the present invention.

[0058] A substrate processing method according to an embodiment described below may be performed in the substrate processing apparatus 1 described with reference to Fig. 1. Accordingly, the same reference numerals as those used in Figs. 1 and 2 will be used hereinafter.

[0059] As shown in FIG. 3, a substrate processing method according to an embodiment of the present invention may include a substrate loading step (S10), a stripping step (S30), and a substrate unloading step (S50).

[0060] In the substrate loading step (S10), a substrate (W) is loaded into the substrate processing apparatus 1. Specifically, in the substrate loading step (S10), a return robot (not shown) loads the substrate (W) into the processing space 101 and seats the substrate (W) on the upper surface of the chuck 120.

[0061] The stripping step (S30) may strip a specific film formed on the substrate (W). That is, the stripping step (S30) may remove the hard mask film 400 formed on the substrate (W). The stripping step (S30) may include a main stripping step (S320) and an over stripping step (S340). For convenience, the main stripping step (S320) may be referred to as the first step, and the over stripping step (S340) may be referred to as the second step.

[0062] The main strip step (S320) and the over strip step (S340) may be performed sequentially. That is, in the substrate processing method according to an embodiment of the present invention, the main strip step (S320) may be performed first, followed by the over strip step (S340). The main strip step (S320) and the over strip step (S340) may be performed in one cycle. For example, the main strip step (S320) and the over strip step (S340) may be performed sequentially and repeatedly as one cycle. After the main strip step (S320) is completed, the atmosphere in the processing space 101 may be exhausted. Also, after the over strip step (S340) is completed, the atmosphere in the processing space 101 may be exhausted.

[0063] In a substrate processing method according to an embodiment of the present invention, after the stripping step (S30) is performed, a step (S40) can be performed to check whether the processed substrate (W) satisfies the process requirements. For example, after one cycle is completed by sequentially performing the main stripping step (S320) and the over-stripping step (S340), the thickness of the hard mask film formed on the substrate (W) can be inspected. If the thickness of the inspection hard mask film does not meet the process requirements, the stripping step (S30) is performed again. On the other hand, if the thickness of the inspection hard mask film meets the process requirements, the substrate unloading step (S50), which will be described later, is performed. That is, if the inspection hard mask film is completely removed from the substrate (W), the stripping step (S30) is terminated and the substrate unloading step (S50) is performed. The main stripping step (S320) and the over-stripping step (S340) will be described in detail below.

[0064] In the substrate unloading step (S50), the substrate W is unloaded from the processing space 101. Specifically, in the substrate unloading step (S50), a return robot (not shown) receives the substrate W from the chuck 120 and unloads the substrate W from the processing space 101. Subsequent processes can be performed on the substrate W unloaded from the substrate processing apparatus 1.

[0065] Figure 4 is a diagram illustrating a schematic view of a substrate processed in the main strip step according to an embodiment of Figure 3. Figure 5 is an enlarged view of part A in Figure 4. Figure 6 is a table illustrating the characteristics of reactants produced in the main strip step according to an embodiment of Figure 3.

[0066] In the main strip step (S320), a process gas is supplied. According to one embodiment, in the main strip step (S320), a first gas (G1) and a second gas (G2) may be excited into a plasma state and supplied to the processing space 101.

[0067] During the main strip step (S320), the temperature of the chuck 120 may be maintained at a set temperature. According to one embodiment, a heater (not shown) disposed inside the chuck 120 may be used to heat the chuck 120 and maintain the temperature within a range of 100 to 150 degrees Celsius. More preferably, the temperature of the chuck 120 may be maintained within a range of 100 to 130 degrees Celsius. According to one embodiment, the set temperature may be a temperature at which the reactants can be easily volatilized, as will be described in detail below. This will be described in detail later.

[0068] During the main strip step (S320), in addition to maintaining the temperature of the chuck 120 at a set temperature, the temperature of the processing space 101 may also be maintained at a set temperature. For example, during the main strip step (S320), the temperature of the processing space 101 may be maintained within a range of 100 to 150 degrees Celsius. More preferably, the temperature of the processing space 101 may be maintained within a range of 100 to 130 degrees Celsius.

[0069] According to one embodiment, in the main strip step (S320), an excited first gas (G1) may be supplied to the processing space 101. As described above, the first gas (G1) may include CF4, SF6, Cl2, or HBr. That is, the first gas (G1) may include a halogen-based gas.

[0070] The first gas (G1) supplied to the processing space 101 may react with a specific film formed on the substrate (W). For example, the first gas (G1) may chemically react with the hard mask film 400 formed on the substrate (W). The first gas (G1) and the hard mask film 400 may react with each other to generate a reactant. For example, the first gas (G1) may react with an additive (e.g., tungsten) added to the hard mask film 400. For example, when CF4 gas is supplied to the processing space 101, the CF4 gas may react with the tungsten added to the hard mask film 400. As a result, a reactant such as WF6 may be generated.

[0071] 6, the boiling point of the generated reactant WF6 is 17°C. Also, in the main strip step (S320) according to one embodiment of the present invention, the temperature of the processing space 101 or the temperature of the chuck 120 is maintained in the range of 100 to 150°C, so the reactant is volatilized after generation and can be easily removed from the substrate (W). Additionally, the additive added to the hard mask film 400 can be easily removed from the substrate (W).

[0072] According to an embodiment, in the main strip step (S320), a second gas (G2) excited into a plasma state may be supplied to the processing space 101. According to an embodiment, the second gas (G2) may include O2. According to an embodiment, the first gas (G1) and the second gas (G2) supplied in the main strip step (S320) may be supplied to the processing space 101 simultaneously.

[0073] The second gas (G2) supplied to the processing space 101 can etch a specific film formed on the substrate (W). According to one embodiment, a portion of the second gas (G2) supplied to the processing space 101 can etch the hard mask film 400 formed on the substrate (W). The hard mask film 400 can be etched during the main strip step (S320). For example, as shown in FIG. 5, the R1 portion of the hard mask film 400 can be etched during the main strip step (S320). Specifically, a portion of the hard mask film 400 formed on the substrate (W) reacts with the first gas (G1) to generate a reactant and is then volatilized and removed from the substrate (W). Another portion of the hard mask film 400 formed on the substrate (W) can be etched by the excited second gas (G2) and removed from the substrate (W).

[0074] In addition, another portion of the second gas (G2) supplied to the processing space 101 in the main strip step (S320) may react with thin films formed on the substrate (W). According to one embodiment, another portion of the second gas (G2) may chemically react with the surface of the thin films formed on the substrate (W). For example, another portion of the second gas (G2) may react with the surface of the insulating film 300 formed on the substrate (W) to form the protective film 500. For example, O2 gas, which is an example of the second gas (G2), may react with Si present on the surface of the insulating film 300 to form SiO2, which is the protective film 500.

[0075] As described above, when performing the main strip step (S320), the first gas (G1) and the second gas (G2) can be simultaneously supplied to the processing space 101. When CF4 gas, an example of the first gas (G1), is supplied to the processing space 101, if the CF4 gas reacts with Si present on the surface of the thin films formed on the substrate (W), SiF4 or SiCl2 can be produced, as shown in Figure 6. These compounds have very low boiling points and are easily volatilized, as shown in Figure 6.

[0076] If SiF4 or SiCl2 is generated on the surface of the insulating film 300, it may be easily volatilized and cause damage to the insulating film 300. That is, the first gas G1 supplied to the processing space 101 in the main strip step (S320) helps to easily remove additives added to the hard mask film 400, but may react with the surface of the insulating film 300 and cause damage to the insulating film 300. Therefore, according to one embodiment, a second gas G2 is supplied to the processing space 101 to etch and strip the hard mask film 400, and at the same time, a protective film 500 is formed on the surface of the insulating film 300, thereby minimizing damage to the insulating film 300 caused by the first gas G1.

[0077] According to the above-described embodiment of the present invention, the mechanism in which the first gas (G1) and the hard mask film 400 chemically react with each other to generate a reactant, the mechanism in which the second gas (G2) etches the hard mask film 400, and the mechanism in which the second gas (G2) chemically reacts with thin films formed on the substrate (W) to generate a protective film 500 on the surface of the thin films are performed simultaneously without any time interval.

[0078] For example, if the hard mask film 400 is etched by supplying only the second gas G2 to the processing space 101 without supplying the first gas G1 to the processing space 101, compounds with very high melting and boiling points (e.g., WO2, WO3, SiO2, etc.) may be generated, as shown in Figure 6. In this case, the generated compounds are difficult to remove in subsequent processes due to their high melting and boiling points.

[0079] In accordance with the above-described embodiment of the present invention, a reactant (e.g., WF6) that can easily volatilize and remove additives added to the hard mask film 400 can be generated using the first gas (G1), the hard mask film 400 can be etched using the second gas (G2), and at the same time, the second gas (G2) can be used to prevent the insulating film 300 and the hard mask film 400 from being excessively etched by the first gas (G1).

[0080] In the above embodiment, the second gas (G2) reacts with the surface of the insulating film 300 to form the protective film 500 on the surface of the insulating film 300, but the present invention is not limited thereto. For example, the second gas (G2) may react with the surface of the hard mask film 400 to form a protective film on the surface of the hard mask film 400. The protective film formed on the surface of the hard mask film 400 may prevent the hard mask film 400 from being excessively etched by the first gas (G1) and / or the second gas (G2).

[0081] 7 is a view showing a schematic view of a substrate being processed in the over-strip step according to an embodiment of FIG. 3. FIG. 8 is an enlarged view of part B of FIG.

[0082] According to an embodiment of the present invention, in the over-stripping step (S340), the dissociation gas (G3) is supplied. According to an embodiment, in the over-stripping step (S340), the dissociation gas (G3) excited in a plasma state may be supplied to the processing space 101.

[0083] As described above, the dissociation gas (G3) may be a gas that physically reacts with the thin films formed on the substrate (W). According to one embodiment, the dissociation gas may be a gas that breaks the bonds formed by compounds. According to one embodiment, the dissociation gas may include an inert gas. For example, the dissociation gas may include hydrogen (H2), deuterium, tritium, argon (Ar), xenon, xenon, etc.

[0084] The dissociation gas may physically react with the hard mask film 400 formed on the substrate (W). The dissociation gas G3 may also physically react with reactants that are not volatilized among the reactants generated in the main strip step (S320). The over-strip step (S340) may physically remove remaining reactants that are not volatilized and removed in the main strip step (S320). For example, as shown in FIG. 8, the R2 portion of the hard mask film 400 may be further etched by the physical reaction with the dissociation gas G3 during the over-strip step (S340).

[0085] In addition, the dissociated gas (G3) can weaken the bonding strength between the carbon layer and additives contained in the hard mask film 400 on the substrate (W), and can physically react with the protective film 500 formed on the surface of the thin films in the main strip step (S320).

[0086] In the over-strip step (S340) according to one embodiment of the present invention, a bias voltage may be applied to the chuck 120 (see FIG. 1). This may improve the linearity of the dissociation gas G3 supplied to the processing space 101 during the over-strip step (S340). That is, this may improve the ability of the dissociation gas G3 supplied to the processing space 101 during the over-strip step (S340) to be drawn into the substrate W. This may improve the physical reactivity between the dissociation gas G3 and the thin films (e.g., the insulating film 300, the hard mask film 400, the protective film 500, or reactants) formed on the substrate W. This may also improve the bonding strength of the thin films formed on the substrate W, allowing the thin films to be easily removed.

[0087] The main strip step (S320) and the over strip step (S340) may each be performed for a short time to minimize damage to the insulating film 300 formed on the substrate (W). Also, the main strip step (S320) and the over strip step (S340) may each be performed for a short time to prevent excessive etching of the hard mask film 400 formed on the substrate (W). That is, the main strip step (S320) and the over strip step (S340) may each be performed within a range of several seconds, and one cycle of the main strip step (S320) and the over strip step (S340) may be repeated multiple times.

[0088] In addition, when the over-strip step (S340) according to the above-described embodiment of the present invention is performed, the bonding strength between the compounds can be weakened and reactants that are not removed in the main strip step (S320) can be removed, thereby efficiently removing the hard mask film 400 formed on the substrate (W).

[0089] In addition, the over-strip step (S340) may weaken the bonding strength of the thin films formed on the substrate (W) by using the dissociation gas (G3). Therefore, if the process requirements are not met after the over-strip step (S340) and the main strip step (S320) is performed again after the over-strip step (S340), the chemical reaction between the first gas (G1) and / or second gas (G2) and the thin films formed on the substrate (W) may occur more easily during the main strip step (S320). In other words, the over-strip step (S340) can improve the process efficiency of the main strip step (S320) and, at the same time, can clearly remove the thin films that were not removed during the main strip step (S320).

[0090] In the above embodiment, the first gas (G1) is CF4 and the second gas (G2) is O2, but the present invention is not limited thereto. For example, the types of the first gas (G1) and the second gas (G2) may be variously changed depending on the types of additives contained in the hard mask film 400.

[0091] FIG. 9 is a flowchart of a substrate processing method according to another embodiment of FIG.

[0092] 9, the substrate processing method according to one embodiment of the present invention may include a substrate loading step (S10), a pre-processing step (S20), a stripping step (S30), and a substrate unloading step (S50).

[0093] The substrate loading step (S10), stripping step (S30), and substrate unloading step (S50) according to one embodiment are the same as or similar to the substrate loading step (S10), stripping step (S30), and substrate unloading step (S50) according to one embodiment described with reference to Figures 3 to 8, so a description of the overlapping content will be omitted below.

[0094] According to one embodiment, the pre-treatment step S20 may be performed after the substrate loading step S10, or before the stripping step S30.

[0095] The pre-treatment step (S20) may supply a dissociation gas to the processing space. In one embodiment, the dissociation gas is the same as the dissociation gas supplied to the processing space in the over-stripping step (S340) described above. That is, the pre-treatment step (S30) supplies a dissociation gas to cause a physical reaction with the thin films formed on the substrate (W). For example, the dissociation gas may physically react with the hard mask film 400 formed on the substrate (W).

[0096] In addition, in the pre-treatment step (S20), a bias voltage may be applied to the chuck 120. By applying a bias voltage to the chuck 120, the ability of dissociated gas to be attracted to the substrate (W) may be improved. For example, the ability of the dissociated gas to be attracted to the hard mask film 400 among the thin films formed on the substrate (W) may be improved. That is, in the pre-treatment step (S20), the bonding strength of the hard mask film 400 may be preemptively weakened. As a result, the hard mask film 400 may be more efficiently removed in the subsequent stripping step (S30).

[0097] The above detailed description exemplifies the present invention. Furthermore, the above description illustrates preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the inventive concept disclosed herein, within the scope of equivalents to the disclosed disclosure, and / or within the scope of the skill or knowledge of the art. The above-described embodiments illustrate the best mode for embodying the technical ideas of the present invention, and various modifications are possible as required for specific application fields and uses of the present invention. Therefore, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be construed to include other embodiments.

Claims

1. 1. A method for processing a substrate, comprising: a first step of supplying a process gas to a chamber, and exciting the process gas to react with a specific film formed on a substrate to generate a reactant; a second step of supplying a dissociative gas to the chamber, the dissociative gas being excited to remove the reactants from the substrate.

2. The process gas is a first gas that reacts with the specific film formed on the substrate; 2. The substrate processing method of claim 1, further comprising a second gas that reacts with a surface of a film formed on the substrate to form a protective film on the surface or to etch the specific film.

3. The substrate processing method according to claim 2 , wherein the dissociated gas further removes the protective film from the substrate.

4. 4. The method of claim 3, wherein the first and second steps are sequentially performed in one cycle and are repeated a plurality of times.

5. The first gas is CF ４ ,SCIENCE FICTION ６ , Cl ２ or HBr, The second gas is O ２ Including, The substrate processing method according to claim 4 , wherein the dissociated gas includes an inert gas.

6. 2. The method of claim 1, wherein the reactant is vaporized at a set temperature in the range of 100 to 150 degrees Celsius.

7. a chuck supporting the substrate within the chamber in the first stage is maintained at the set temperature; 7. The substrate processing method according to claim 6, wherein bias power is applied to the chuck in the second step.

8. 2. The method of claim 1, wherein the second step is performed prior to the first step.

9. 9. The substrate processing method according to claim 1, wherein the specific film is a hard mask film.

10. The substrate processing method of claim 9 , wherein the hard mask film includes a carbon layer and an additive containing tungsten.

11. 1. A substrate processing method for removing a hard mask film formed on a substrate, comprising: supplying a first gas into a chamber, the first gas being excited and reacting with the hard mask film formed on the substrate to generate a reactant; A second gas different from the first gas is supplied to the chamber, and the second gas is excited to etch the hard mask film or react with an insulating film formed on a substrate to form a protective film on the surface of the insulating film; The substrate processing method wherein the first gas and the second gas are simultaneously supplied to the chamber.

12. 12. The method of claim 11, wherein the reactant is volatilized and removed from the substrate at a set temperature in the range of 100 to 150 degrees Celsius.

13. 13. The substrate processing method of claim 12, wherein the temperature inside the chamber is maintained at the set temperature when the first gas is supplied to the chamber.

14. 12. The substrate processing method of claim 11, further comprising: supplying the first gas and the second gas into the chamber; and then supplying a dissociated gas different from the first gas and the second gas into the chamber, and exciting the dissociated gas to remove the reactant and the protective film from the substrate.

15. The method comprises:

15. The substrate processing method of claim 14, wherein a cycle of supplying the first gas and the second gas and then supplying the dissociation gas is performed, and the cycle is repeated a plurality of times.

16. 12. The method of claim 11, further comprising: supplying a dissociation gas different from the first gas and the second gas into the chamber before supplying the first gas and the second gas into the chamber.

17. The first gas is CF ４ ,SCIENCE FICTION ６ , Cl ２ or HBr, The second gas is O ２ Including, 17. The substrate processing method according to claim 14, wherein the dissociated gas includes an inert gas.

18. The substrate processing method of claim 11 , wherein the hard mask film includes a carbon layer and an additive containing tungsten.

19. 1. A method for treating a substrate including an insulating film formed by alternatingly stacking nitride films and oxide films, and a hard mask film stacked on the insulating film, comprising: CF ４ ,SCIENCE FICTION ６ , Cl ２ Alternatively, a first gas containing HBr is excited in the chamber and reacts with the hard mask film formed on the substrate to generate a reactant, and O ２ a main strip step in which a second gas containing and an over-strip step of removing the reactant and the protective film from the substrate by supplying a dissociation gas including an inert gas into the chamber while applying bias power to a chuck supporting the substrate in the chamber after the main strip step. The hard mask film includes an additive and a tungsten-doped carbon layer.

20. 20. The method of claim 19, wherein the reactant is vaporized at a set temperature in the range of 100 to 150 degrees Celsius.

Images