Substrate heating device and semiconductor device

Abstract

The present invention provides a substrate heating apparatus and semiconductor device, the substrate heating apparatus including a heating plate and at least two lift units, the heating plate having a contact surface for placing and heating a substrate, each lift unit including a lifting part and a receiving part, the lifting part being located outside the heating plate and the receiving part being connected to the lifting part to support and lift the substrate. In the present invention, the avoidance space for lifting the substrate is moved from the inside to the outside of the heating plate, thereby reducing the number and area of ​​openings in the contact surface, i.e., increasing the contact area between the heating plate and the substrate, and improving the heating temperature uniformity by the heating plate.

Description

[Technical Field]

[0001] The present invention relates to the field of semiconductor technology, and more particularly to a substrate heating device and a semiconductor device. [Background technology]

[0002] With the continuous development of integrated circuit technology, the manufacturing process of integrated circuits is also constantly changing, and the requirements for related processes are becoming increasingly stringent. Some processes (e.g., CVD process, PVD process, laser annealing process, bonding process, etc.) require the substrate to be heated to a certain temperature before further processing, and the temperature uniformity of the substrate before processing directly affects the subsequent processing results.

[0003] For example, in a laser annealing apparatus, a substrate is placed and heated using a substrate table equipped with a heating function, and the substrate table is further provided with a PIN prevention space for transporting and transferring the substrate. The PIN prevention space may be a number of holes provided in the substrate table, which significantly affect the heating temperature uniformity of the heating plate and further affect the resistance uniformity of the substrate after laser annealing, i.e., the annealing uniformity. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a substrate heating device and a semiconductor device that improve the uniformity of the heating temperature by the heating plate and further improve the uniformity of annealing. [Means for solving the problem]

[0005] In order to solve the above technical problem, the present invention provides a substrate heating apparatus, comprising: a heating plate; and at least two lift units; the heating plate is provided with a contact surface for placing and heating a substrate; Each of the lift units includes a lifting portion and a receiving portion, the lifting portion being provided radially outward of the heating plate, and the receiving portion being connected to the lifting portion to support and lift the substrate.

[0006] Optionally, the receiving portion includes a connecting end and a receiving end opposite to each other, the connecting end being used for connecting to the lifting portion, and the receiving portion including a receiving surface for receiving the substrate.

[0007] Optionally, the receiving surface contacts a surface of the substrate that is closer to the heating plate, and the heating plate is provided with a groove extending from the outside to the inside of the heating plate for receiving the receiving portion.

[0008] Optionally, the number of said lift units is at least three, and said at least three lift units are evenly distributed around the periphery of said heating plate.

[0009] Optionally, the receiving portion is positioned above the substrate, the receiving surface contacts one side of the substrate that is away from the heating plate, and the receiving surface is provided with an adsorption unit for fixing the substrate when the substrate is lifted.

[0010] Optionally, said at least two lift units are positioned within half of a periphery surrounding said heating plate.

[0011] Optionally, at least two of the receiving surfaces share one of the suction units, the suction units being annular and arranged circumferentially along the edge of the substrate.

[0012] Optionally, the receiving end further includes a guide surface connecting with the receiving surface, the guide surface inclined toward the substrate to guide the substrate from the guide surface to the receiving surface.

[0013] Optionally, the heating plate includes a plate body and a heating unit, a surface of the plate body facing the substrate being a heating surface, and the contact surface being provided within the heating surface.

[0014] Optionally, the device may further include an optical sensor and a vacuum sensor, and when the optical sensor is activated and the vacuum sensor is not activated, it is determined that the substrate is located on the lift unit, and when the optical sensor and the vacuum sensor are activated simultaneously, it is determined that the substrate is located on the contact surface.

[0015] According to another aspect of the present invention, there is further provided a semiconductor device including a substrate heating device, the substrate heating device including a heating plate and at least two lift units, the heating plate having a contact surface for placing and heating a substrate, each of the lift units including a lifting portion and a receiving portion, the lifting portion being disposed radially outside the heating plate, and the receiving portion being connected to the lifting portion to support and lift the substrate.

[0016] As described above, in the present invention, the lifting section of the lift unit is provided radially outside the heating plate, and the receiving section is connected to the lifting section and faces the edge of the substrate, so that the substrate is contacted from the edge of the substrate and lifted. This moves the avoidance space for lifting the substrate from the inside of the heating plate to the outside of the heating plate, reducing the number and area of ​​openings in the contact surface and increasing the contact area between the heating plate and the substrate, thereby improving the uniformity of the heating temperature by the heating plate and further improving the uniformity of annealing. [Brief explanation of the drawings]

[0017] Those skilled in the art should understand that the accompanying drawings are provided for a better understanding of the present invention, and are not intended to limit the present invention. [Figure 1] 1 is a diagram showing a state in which a substrate is placed in the substrate heating apparatus according to the first embodiment. [Figure 2]FIG. 2 is a diagram showing a state in which the substrate is lifted in the substrate heating apparatus according to the first embodiment. [Figure 3] FIG. 2 is a top view showing the heating plate according to the first embodiment. [Figure 4] FIG. 10 is a diagram showing a state in which a substrate is placed in a substrate heating apparatus according to a second embodiment. [Figure 5] FIG. 10 is a diagram showing a state in which the substrate is lifted in the substrate heating apparatus according to the second embodiment. [Figure 6] FIG. 10 is a top view showing a heating plate and a lift unit according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0018] In order to make the objects, advantages, and features of the present invention clearer, the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. Please note that the following drawings are in a very simplified form, are not to a specific scale, and are used for convenient and clear assistance in describing the embodiments of the present invention. Furthermore, the structures shown in the following drawings are often parts of actual structures. In particular, the features shown in each drawing are different, and different scales may be used.

[0019] When an element or layer is described as being "on" or "connected" to another element or layer, it may be directly on or connected to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is described as being "directly on" or "directly connected" to another element or layer, there are no intervening elements or layers. Terms such as first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or sections, but it is understood that these elements, components, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a first element, component, region, layer, or section discussed below may be referred to as a second element, component, region, layer, or section without departing from the teachings of the present invention. Spatial relationship terms such as "below," "below," "below," "on," "above," and "above" may be used herein for convenience of description to describe the relationship of one element or feature to another element or feature shown in the figures. As will be understood, in addition to the orientation shown in the figures, the spatial relationship terms are intended to further encompass different orientations of the device during use and operation. For example, if the device in the figures is inverted, elements or features described as being "below," "beneath," or "below" other elements would be oriented so as to be "above" the other elements or features. The device may be oriented in another orientation (rotated 90 degrees or oriented in another direction), and the spatial relationship descriptors used herein would be interpreted accordingly. The terminology used herein is for the purpose of describing specific examples only and is not intended to limit the invention. As used herein, the singular forms "a," "one," and "the" are intended to include the plural unless the context clearly dictates otherwise. Furthermore, it will be understood that the term "comprising" specifies the presence of features, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements and / or components.As used herein, the term "and / or" includes any and all combinations of the associated listed items. [Example]

[0020] FIG. 1 is a diagram showing a state in which a substrate is placed in a substrate heating apparatus according to a first embodiment, and FIG. 3 is a top view showing a heating plate according to the first embodiment.

[0021] 1 and 3 , the substrate heating apparatus according to this embodiment includes a heating plate 20 having a heating surface 213 and at least two lift units 30. A contact surface 212 for placing a substrate 40 is provided within the heating surface 213, and at least two grooves 211 extending from the radially outer side of the heating plate 20 to within the contact surface 212 are provided in the heating surface 213. In this embodiment of the present invention, the substrate heating apparatus includes three lift units 30, and correspondingly, three grooves 211 are provided in the heating surface 213. Each lift unit 30 includes a lifting portion 32 and a receiving portion 31. The lifting portion 32 is provided on the outer side of the heating plate 20, and the receiving portion 31 is connected to the lifting portion 32 and faces the edge of the substrate 40. The receiving portion 31 contacts the edge of the substrate 40 from the outer side of the contact surface 212 to lift the substrate 40.

[0022] The substrate 40 may be of any suitable shape, any suitable size, and any suitable material, and may be circular or rectangular in shape, and may be made of silicon, glass, sapphire, ceramics, organic glass, etc. In this embodiment, a silicon wafer having a base diameter of 300 mm will be described.

[0023] 1 , the heating plate 20 includes a plate body 21 and a heating unit 22. The plate body 21 can be made of a material with a high thermal uniformity, such as ceramics. The area where the plate body 21 contacts the substrate 40, i.e., the area where the substrate 40 is placed, is the contact surface 212. The heating units 22 are uniformly arranged within the plate body 21 to conduct heat to the surface of the plate body 21 and form a heating surface 213 on the surface of the plate body 21 to heat the substrate 40. The area of ​​the area where the heating units 22 are arranged within the plate body 21 can be larger than the area of ​​the contact surface 212 (the area of ​​the substrate 40), thereby offsetting heat loss at the edges of the heating plate 20. At the same time, the contact surface 212 can be positioned as far away from the edges of the heating surface 213 as possible (closer to the center) to ensure temperature uniformity within the contact surface 212. In this embodiment, taking the diameter of the substrate 40 as an example, 300 mm, the plate body 21 may be circular, and its diameter may be, for example, greater than 320 mm, the center of the contact surface 212 coincides with the center of the heating surface 213, the heating unit 22 may be an electric heating wire, and the heating unit 22 is arranged within a circular area with a diameter of 320 mm.

[0024] 1 , the substrate heating apparatus includes a mounting plate 10 for fixing other components of the substrate heating apparatus. The heating plate 20 is mounted on the mounting plate 10, and the driving member is connected to a lifting section 32 provided below the mounting plate 10 and penetrating the mounting plate 10 to drive the lift unit 30 to move up and down. Preferably, a plurality of support columns are provided between the mounting plate 10 and the heating plate 20, and these support columns fix the heating plate 20 above the mounting plate 10 at intervals, thereby insulating the heating plate 20 from heat and preventing it from affecting other components and reducing heat loss from the heating plate 20. An optical sensor 41 is provided below the mounting plate 10, and openings are provided above the optical sensor 41 on the mounting plate 10 and the heating plate 20. The optical sensor 41 emits light through the openings to detect whether a substrate 40 is present on the contact surface 212 or above the heating plate 20.

[0025] 1 , the substrate heating apparatus further includes a second suction unit 42 that is provided on the surface of the contact surface 212 and that fixes the substrate 40 by vacuum suction when the substrate 40 is placed on the contact surface 212, thereby closely adhering the substrate 40 to the contact surface 212 and improving the efficiency of heat conduction. Here, the second suction unit 42 includes a vacuum air passage that provides negative pressure, and this vacuum air passage passes through the mounting plate 10 and the plate body 21 to communicate with one or more second suction units 42. Preferably, a vacuum sensor 43 is further connected to the vacuum air passage below the mounting plate 10, and the vacuum sensor 43 can be used to detect whether the substrate 40 is present on the contact surface 212.

[0026] The combination of the optical sensor 41 and the vacuum sensor 43 is also advantageous for monitoring (managing) the state of the substrate 40 (material) in the substrate heating apparatus. As shown in FIG. 1, when the optical sensor 41 and the vacuum sensor 43 are activated simultaneously, it can be determined that the substrate 40 is placed on the heating surface 213 (contact surface 212). As shown in FIG. 2, when the optical sensor 41 is activated but the vacuum sensor 43 is not activated, it can be determined that the substrate 40 is placed above the heating surface 213, i.e., the substrate 40 is disposed on the lift unit 30. Of course, when neither sensor is activated, it can be determined that the substrate 40 is not present in the substrate heating apparatus or that there is an abnormality in the substrate 40, such as a crack.

[0027] 2 , the substrate heating apparatus includes at least two lift units 30, which are provided on the outer periphery of the heating plate 20 and are used to receive the substrate 40 above the heating plate 20 or to lift the substrate 40 on the heating plate 20, thereby enabling the substrate 40 to be transferred onto the heating plate 20. Each lift unit 30 includes a lifting portion 32 and a receiving portion 31, and the lifting portion 32 may be rod-shaped. The at least two lifting portions 32 are provided evenly around the outer periphery of the heating plate 20 in the radial direction, penetrate the mounting plate 10, and are connected to a drive unit below the mounting plate 10, which drives the lifting portion 32 to move up and down. The receiving portion 31 is connected to the lifting portion 32 and faces the center line of the contact surface 212 (substrate 40). The receiving portion 31 receives the substrate 40. The receiving portion 31 includes a connecting end 312 and a receiving end 311 facing each other. The connecting end 312 is located at one end away from the contact surface 212 and is connected to the lifting unit 32. The receiving end 311 is located near the contact surface 212 (substrate 40) to receive the substrate 40. The receiving end 311 is used to receive the surface of the substrate 40. That is, the surface used to contact the substrate 40 is the receiving surface 311a. Preferably, the receiving end 311 further includes a guide surface 311b connected to the receiving surface 311a and inclined toward the back surface of the substrate 40. This guide surface 311b guides the substrate 40 from the guide surface 311b to the receiving surface 311a, ensuring the accuracy and consistency of the position of the lift unit 30 receiving the substrate 40. The guide surface 311b may be an inclined or curved surface, with the higher side of the guide surface 311b facing away from the substrate 40 and the lower side of the guide surface 311b facing closer to the substrate 40 and connected to the receiving surface 311a. When connected to the substrate 40, if the position of the substrate 40 is offset, i.e., if one side of the substrate 40 is placed on the guide surface 311b instead of the receiving surface 311a, the guide surface 311b can be used to guide the substrate 40 onto the receiving surface 311a, thereby achieving accurate positioning of the substrate 40.

[0028] 1 and 3, the heating plate 20 (heating surface 213) is provided with at least two corresponding grooves 211 for at least partially accommodating the receiving portions 31 when the substrate 40 is placed on the contact surface 212 and heated. The grooves 211 extend from the edge of the plate body 21 into the contact surface 212, and the shape and size of the grooves 211 are as similar as possible to the shape and size of the receiving portions 31 to reduce the influence of the receiving surface 311a of the receiving portion 31 on the contact surface 212 between the substrate 40 and the heating plate 20, thereby improving the heating temperature uniformity of the heating plate 20. In addition, in one preferred embodiment, the contact area between the receiving surface 311a of the receiving portion and the back surface of the substrate 40 is positioned in an area outside the process-required range of the substrate 40 (e.g., an ineffective area), and the grooves 211 are positioned on the contact surface 212 corresponding to the area outside the process-required range of the substrate 40, thereby improving the heating temperature uniformity of the substrate 40.

[0029] When the lift unit is installed in the heating plate, at least two openings are formed on the contact surface of the heating plate to accommodate the lift unit and provide escape space for the lift unit, and it should be understood that these openings have a significant impact on the temperature uniformity of the heating plate 20. Taking a rod-shaped lift unit as an example, the contact portion between the lift unit and the substrate needs to be provided with functional structures such as scratch resistance and friction increase, which results in a relatively large opening on the contact surface, which further adversely affects the temperature uniformity of the heating plate.

[0030] In contrast, in this embodiment, a lift unit 30 is provided outside the heating plate 20, and the receiving part 31 contacts the edge of the substrate 40 to lift it. The avoidance space for lifting the substrate 40 is moved to the outside of the heating plate 20, and the number and area of ​​the openings of the contact surface 212 can be reduced, thereby improving the temperature uniformity of the heating plate 20. In addition, the contact area between the contact surface 212 and the back surface of the substrate 40 is increased to utilize heat conduction, and the guide surface 311b of the receiving end 311 can ensure the alignment of the position of the substrate 40.

[0031] In one specific example of this embodiment, the diameter of the substrate 40 (contact surface 212) is 300 mm, the diameter of the heating plate 20 (heating surface 213) is 330 mm, and the three lift units 30 are all evenly spaced around the outer periphery of the heating plate 20. The receiving surface 311a may be located concentrically with the heating plate 20 in an area having a diameter of 296 mm to 300.6 mm, and the guide surface 311b may be located concentrically with the heating plate 20 in an area having a diameter of 300.6 mm to 302 mm. Of course, in the above example, the area of ​​the substrate 40 within a diameter of 296 mm is considered the effective area, but the diameter of one side of the receiving surface 311a remote from the substrate 40 may be greater than 300.6 mm, and the diameter of the higher side of the guide surface 311b may also be greater than 302 mm. [Example]

[0032] FIG. 4 is a diagram showing a state in which a substrate is placed in the substrate heating apparatus according to the second embodiment, and FIG. 5 is a diagram showing a state in which the substrate is lifted in the substrate heating apparatus according to the second embodiment.

[0033] 4 and 5, in this embodiment, as in the first embodiment, the lift unit 30 is provided radially outward from the heating plate 20, but the receiving portion 31 of the lift unit 30 is provided above the substrate 40. In other words, the substrate 40 is lifted by contacting the edge of one surface of the substrate 40 (e.g., the front surface of the substrate 40) that is away from the heating plate 20. For this reason, a first suction unit 313 is provided on the receiving surface 311a to fix the substrate 40 when lifting it. The first suction unit 313 has a vacuum air passage that penetrates the receiving portion 31 and the lifting portion 32. Of course, the contact area between the first suction unit 313 and the front surface of the substrate 40 may be located in an ineffective area of ​​the substrate 40.

[0034] After placing the substrate 40 on the heating plate 20 (contact surface 212), the lift unit 30 rises to a certain height and releases contact with the substrate 40. Therefore, there is no need to provide grooves for accommodating the receiving portions 31 on the heating surface 213 in the second embodiment. Compared to the first embodiment, the number and area of ​​openings on the heating surface 213 can be further reduced, and the temperature uniformity of the heating plate 20 can be further improved.

[0035] Referring to Figure 6, compared to Example 1 in which a space for connecting the lift unit 30 to the substrate 40 is provided above the lift unit 30, in this example, at least two lift units 30 are provided within half of the outer periphery of the heating plate 20 (i.e., on one side of the heating plate 20), and the other side of the lift unit 30 is used as a space for connecting to the substrate 40, i.e., the substrate 40 is connected from the half of the outer periphery where the lift unit 30 is not provided.

[0036] 6, in one preferred example, all lift units 30 of the heating device for the substrate 40 share one first suction unit 313. This first suction unit 313 has a ring shape provided along the circumferential direction of the edge of the substrate 40 and can contact the circumferential area (ineffective area) of the front edge of the substrate 40, thereby increasing the suction area, strengthening the suction force, and preventing the substrate 40 from falling off.

[0037] Regarding the principles and structures of other components in Example 2, such as the guide surface 311b, the optical sensor 41, the second suction unit 42, and the vacuum sensor 43, you may specifically refer to Example 1, and detailed explanations will be omitted here. [Example]

[0038] Example 3 provides a semiconductor device. The semiconductor device according to this example includes the substrate heating device described above for receiving a substrate within the semiconductor device and uniformly heating the substrate. The semiconductor device may be a CVD device, a PVD device, a laser annealing device, a bonding device, or the like. Specifically, the substrate heating device includes a heating plate and at least two lift units. The heating plate has a contact surface for placing and heating the substrate. Each lift unit includes a lifting portion and a receiving portion. The lifting portion is provided radially outward of the heating plate, and the receiving portion is connected to the lifting portion and faces the edge of the substrate. The receiving portion contacts the edge of the substrate from outside the contact surface to lift the substrate.

[0039] As described above, in the present invention, the lifting section of the lift unit is provided radially outside the heating plate, and the receiving section is connected to the lifting section and faces the edge of the substrate, so that the substrate is contacted from the edge of the substrate to lift and lower it. This moves the avoidance space for lifting the substrate from inside the heating plate to outside the heating plate, reducing the number and area of ​​openings in the contact surface and increasing the contact area between the heating plate and the substrate, thereby improving the uniformity of the heating temperature by the heating plate.

[0040] The above description is merely a description of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention. Any changes and modifications made by those skilled in the art based on the above disclosure shall be included within the scope of protection of the claims. [Explanation of symbols]

[0041] 10 - mounting plate; 20 - heating plate; 21 - plate body; 22 - heating unit; 211 - groove; 212 - contact surface; 213 - heating surface; 30 - lift unit; 32 - lifting part; 31 - receiving part; 311 - receiving end; 312 - connecting end; 311a - receiving surface; 311b - guide surface; 313 - first suction unit; 40 - substrate; 41 - optical sensor; 42 - second suction unit; 43 - vacuum sensor; 44 - support

Claims

1. a heating plate and at least two lift units; the heating plate is provided with a contact surface for placing and heating a substrate; A substrate heating device characterized in that each lift unit includes a lifting portion and a receiving portion, the lifting portion being arranged radially outside the heating plate, and the receiving portion being connected to the lifting portion to support and lift the substrate.

2. 2. The substrate heating apparatus according to claim 1, wherein the receiving portion includes a connecting end and a receiving end facing each other, the connecting end being connected to the lifting portion, and the receiving end including a receiving surface for receiving the substrate.

3. 3. The substrate heating device of claim 2, wherein the receiving surface contacts one side of the substrate that is closest to the heating plate, and the heating plate has a groove extending from the outside to the inside of the heating plate to accommodate the receiving surface.

4. 4. The substrate heating apparatus of claim 3, wherein the number of the lift units is at least three, and the at least three lift units are evenly arranged along the periphery of the heating plate.

5. 3. The substrate heating device of claim 2, wherein the receiving portion is positioned above the substrate, the receiving surface is in contact with one side of the substrate that is away from the heating plate, and the receiving surface is provided with an adsorption unit for fixing the substrate when the substrate is lifted.

6. The substrate heating apparatus of claim 5 , wherein the at least two lift units are disposed within half of a periphery surrounding the heating plate.

7. 7. The substrate heating apparatus according to claim 6, wherein at least two of the receiving surfaces share one of the suction units, the suction units being annular and arranged in a circumferential direction along the edge of the substrate.

8. The substrate heating device according to any one of claims 2 to 7, characterized in that the receiving end further includes a guide surface connected to the receiving surface, the guide surface being inclined toward the substrate to guide the substrate from the guide surface to the receiving surface.

9. The substrate heating device according to any one of claims 1 to 7, characterized in that the heating plate includes a plate body and a heating unit, one surface of the plate body facing the substrate is a heating surface, and the contact surface is provided within the heating surface.

10. The substrate heating device of any one of claims 2 to 7, further comprising an optical sensor and a vacuum sensor, wherein when the optical sensor is activated and the vacuum sensor is not activated, it is determined that the substrate is located on the lift unit, and when the optical sensor and the vacuum sensor are activated simultaneously, it is determined that the substrate is located on the contact surface.

11. A semiconductor device comprising a substrate heating device having a heating plate and at least two lift units, wherein the heating plate has a contact surface for placing and heating a substrate, and each of the lift units includes a lifting portion and a receiving portion, the lifting portion being provided radially outward of the heating plate, and the receiving portion being connected to the lifting portion to support and lift the substrate.

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