RRAM forming voltage reduction due to proximity heater

Abstract

A computer memory device includes a bottom electrode, a top electrode, and a memory component disposed between the top and bottom electrodes. The memory component is fabricated from a dielectric solid material and is in direct contact with the top and bottom electrodes. The computer memory device further includes a proximity heater configured to elevate a temperature of a portion of the memory component. The computer memory device further includes a dielectric material layer in direct contact with the proximity heater. The dielectric material layer is in direct contact with one of the bottom electrode and the top electrode. (FIG. 3A)

Description

[Background technology]

[0001] The present disclosure relates to the electrical, electronic and computer fields. Specifically, the present disclosure relates to resistive random-access (RRAM) computer memory.

[0002] RRAM is a type of nonvolatile random-access (RAM) computer memory that functions by altering the electrical resistance of a dielectric solid material. More specifically, RRAM involves creating defects known as oxygen vacancies (oxide junctions where oxygen has been removed) in a thin oxide layer, which can charge and drift under an electric field. The movement of oxygen ions and vacancies in oxides is similar to the movement of electrons and holes in semiconductors. Dielectric solid materials, which are normally insulators, can be made to conduct through filaments, or conductive paths, that form when a sufficiently high voltage is applied. Specifically, during the application of a sufficiently high voltage, the dielectric solid material is increasingly biased until it begins to break down, creating a local conductive path. The local conductive path, also known as a filament, provides a low-resistance path through the dielectric solid material. Once the filament is formed, it can be reset (broken down to a high resistance) or set (reformed to a relatively low resistance) by applying another sufficiently high voltage. Due to this ability to switch the device between high and low resistance, the dielectric solid materials used in RRAM devices are commonly referred to as "switching" dielectrics.

[0003] A voltage that results in the filament is applied between a top electrode and a bottom electrode disposed on opposite sides of the switching dielectric. The application of a voltage between the top and bottom electrodes that results in the creation of the filament is called "forming." Forming can generally be a stochastic process. As a result, the location within the switching dielectric of an RRAM device where the filament forms is generally random and unpredictable.

[0004] RRAM offers several advantages over other types of RAM. For example, RRAM can operate on faster timescales than phase-change memory. RRAM can have a simpler and smaller cell structure than magnetoresistive RAM. Compared to flash memory and racetrack memory, RRAM can operate using relatively low voltages, allowing it to be used in low-power applications. Furthermore, because RRAM relies on the motion of oxygen atoms, it has the potential to be scaled to smaller sizes than other types of RAM. This may allow for scaling that is not directly tied to cell size.

[0005] However, the voltage required to form the filament during the forming operation is relatively high, posing a significant challenge to RRAM adoption and, therefore, the ability to utilize the benefits achievable by RRAM devices. Accordingly, reducing the forming voltage is desirable to improve the feasibility and applicability of RRAM devices.

[0006] One approach to reducing the forming voltage is to increase the temperature of the switching dielectric during the forming process. Increasing the temperature can reduce both the applied voltage and the time required for forming. However, achieving increased switching dielectric temperatures presents challenges. For example, heating the entire device not only heats the switching dielectric but also unnecessarily heats other elements of the device, resulting in a large amount of wasted energy. Furthermore, some other elements of the device may be adversely affected by a temperature increase large enough to reduce the forming voltage. Therefore, it is desirable to be able to selectively heat the switching dielectric of memory cells in an RRAM device. Summary of the Invention

[0007] An embodiment of the present disclosure includes a computer memory device. The computer memory device includes a bottom electrode, a top electrode, and a memory component made of a dielectric solid material. The memory component is disposed between the top electrode and the bottom electrode. The memory component is in direct contact with the top electrode and the bottom electrode. The device further includes a proximity heater configured to elevate a temperature of a portion of the memory component. The device further includes a dielectric material layer in direct contact with the proximity heater. The dielectric material layer is in direct contact with one of the bottom electrode and the top electrode.

[0008] The inclusion of a proximity heater within the device provides a structure that allows for selective heating of portions of the dielectric solid material of a memory component. Thus, such embodiments allow for selective heating of the switching dielectric of memory cells of a RRAM device.

[0009] According to some embodiments of the present disclosure, a proximity heater can be disposed between the top and bottom electrodes. Such embodiments further facilitate selective heating of the switching dielectric of memory cells of an RRAM device because the memory component is also disposed between the top and bottom electrodes and is therefore in proximity to the proximity heater.

[0010] According to some embodiments of the present disclosure, the proximity heater may be in direct contact with the memory component, which further facilitates selective heating of the switching dielectric of the memory cells of the RRAM device via the direct contact.

[0011] According to some embodiments of the present disclosure, the proximity heater may include an opening therethrough, and the bottom electrode may be at least partially disposed within the opening. Such embodiments further facilitate selective heating of the switching dielectric of memory cells of an RRAM device by providing a structure that effectively houses the proximity heater within the device.

[0012] An additional embodiment of the present disclosure includes a heating device configured to increase the temperature of a portion of a dielectric solid material of at least one resistive random access memory component. The heating device includes a heater material layer and a dielectric material layer in direct contact with the heater material layer. The dielectric material layer is also in direct contact with one of the top electrode and the bottom electrode of the at least one resistive random access memory component. The heating device further includes first and second terminals configured to pass a current through the heater material layer. The first and second terminals are configured to operate independently of terminals operating the top and bottom electrodes.

[0013] The inclusion of first and second terminals operable independently of the terminals operating the top and bottom electrodes allows for the inclusion of a heating device within the RRAM device while separating its function from the top and bottom electrodes to enable selective heating of the dielectric solid material of at least one RRAM component. Thus, such embodiments enable selective heating of the switching dielectric of memory cells of the RRAM device.

[0014] Additional embodiments of the present disclosure include methods of forming a resistive random access memory component. The method includes forming a bottom electrode. The method further includes forming a proximity heater separated from the bottom electrode by a dielectric spacer such that a portion of the bottom electrode extends through a first opening in the proximity heater and a second opening in the dielectric spacer. The method further includes forming a memory element made of a dielectric solid material in direct contact with the portion of the bottom electrode. The method further includes forming a top electrode in direct contact with the memory element.

[0015] Such an embodiment enables selective heating of the switching dielectric of a memory cell of a RRAM device by forming a proximity heater such that a portion of the bottom electrode extends through the first opening into the proximity heater.

[0016] Additional embodiments of the present disclosure include a method of forming a resistive random access memory component. The method includes forming a bottom electrode. The method further includes forming a memory element made of a dielectric solid material in direct contact with the bottom electrode. The method further includes forming a top electrode in direct contact with the memory element. The method further includes forming a proximity heater configured to increase the temperature of at least a portion of the memory element. The proximity heater is separated from the top electrode by a dielectric spacer.

[0017] Such an embodiment allows for selective heating of the switching dielectric of the memory cells of the RRAM device, where forming the RRAM component includes forming a proximity heater.

[0018] Additional embodiments of the present disclosure include a computer memory device including a bottom electrode, a top electrode, and a memory component made of a dielectric solid material. The memory component is disposed in direct contact with the top electrode and the bottom electrode. The computer memory device further includes a proximity heater disposed between the top electrode and the bottom electrode, the proximity heater configured to elevate a temperature of a portion of the memory component. The computer memory device further includes a dielectric material layer in direct contact with the proximity heater and in direct contact with the bottom electrode.

[0019] Such an embodiment allows for selective heating of the switching dielectric of a memory cell of an RRAM device because the memory component is placed in direct contact with the top and bottom electrodes and is therefore in close proximity to a proximity heater located between the top and bottom electrodes.

[0020] The above summary is not intended to describe each illustrated embodiment or every implementation of the present disclosure. [Brief explanation of the drawings]

[0021] The drawings included in this disclosure are incorporated in and form a part of this specification. They illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure. The drawings illustrate typical embodiments only and are not intended to limit the present disclosure.

[0022] [Figure 1] FIG. 1 illustrates a flowchart of an exemplary method for forming a computer memory device, according to an embodiment of the present disclosure.

[0023] [Figure 2-1] FIG. 2A is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0024] FIG. 2B is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0025] FIG. 2C is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0026] FIG. 2D is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0027] [Figure 2-2] FIG. 2E is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0028] FIG. 2F is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0029] FIG. 2G is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0030] 2H is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0031] [Figure 2-3] FIG. 2I is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0032] FIG. 2J is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0033] FIG. 2K is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device following performance of a portion of the exemplary method shown in FIG. 1, according to an embodiment of the present disclosure.

[0034] [Figure 3] FIG. 3A is a schematic diagram illustrating a perspective view of a portion of the exemplary computer memory device shown in FIG. 2K, according to an embodiment of the present disclosure.

[0035] FIG. 3B is a schematic diagram illustrating a top view of a portion of the exemplary computer memory device shown in FIG. 2K, according to an embodiment of the present disclosure.

[0036] [Figure 4] FIG. 4A is a schematic diagram illustrating a top view of a portion of an exemplary computer memory device, according to an embodiment of the present disclosure.

[0037] FIG. 4B is a schematic diagram illustrating a cross-sectional view of an exemplary computer memory device, according to an embodiment of the present disclosure.

[0038] [Figure 5] FIG. 5A is a schematic diagram illustrating a plan view of a portion of the exemplary computer memory device shown in FIG. 4A, according to an embodiment of the present disclosure.

[0039] FIG. 5B is a schematic diagram illustrating a cross-sectional view of the exemplary computer memory device shown in FIG. 5A, according to an embodiment of the present disclosure.

[0040] [Figure 6] FIG. 6A is a schematic diagram illustrating a perspective view of an exemplary computer memory device, according to an embodiment of the present disclosure.

[0041] FIG. 6B is a schematic diagram illustrating a cross-sectional view of the exemplary computer memory device shown in FIG. 6A, according to an embodiment of the present disclosure.

[0042] [Figure 7] FIG. 1 is a schematic diagram illustrating a perspective view of a portion of an exemplary computer memory device, according to an embodiment of the present disclosure.

[0043] [Figure 8] FIG. 1 is a schematic diagram illustrating a perspective view of a portion of an exemplary computer memory device, according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0044] The present disclosure relates to the electrical, electronic, and computer fields. Specifically, the present disclosure relates to resistive random access (RRAM) computer memories. While the present disclosure is not necessarily limited to such applications, various aspects of the present disclosure may be understood through a discussion of various examples using this context.

[0045] Various embodiments of the present disclosure are described herein with reference to the associated drawings. Alternative embodiments may be devised without departing from the scope of the present disclosure. It should be noted that in the following description and in the drawings, various connections and relationships (e.g., above, below, adjacent, etc.) between elements are described. These connections and / or relationships may be direct or indirect unless otherwise specified, and the present disclosure is not intended to be limiting in this respect. Thus, a connection between entities may refer to a direct or indirect connection, and a relationship between entities may be a direct or indirect relationship. As an example of an indirect relationship, when a layer "A" is said to be formed on a layer "B," this includes a situation in which one or more intermediate layers (e.g., layer "C") exist between layer "A" and layer "B," as long as the relevant properties and functionality of layer "A" and layer "B" are not substantially altered by the intermediate layer(s).

[0046] The following definitions and abbreviations are to be used in interpreting the claims and the specification. As used herein, the words "comprises," "comprising," "includes," "including," "has," "having," "contains," or "containing," or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a composition, mixture, process, method, article, or device that includes a list of elements is not necessarily limited to only those elements and may include other elements not expressly listed or inherent in such composition, mixture, process, method, article, or device.

[0047] For purposes of the following description, the terms “above,” “below,” “right,” “left,” “vertical,” “horizontal,” “top,” “bottom,” and their derivatives refer to the described structures and methods oriented in the drawing figures. Phrases such as “overlay,” “atop,” “on top of,” “positioned on,” or “positioned atop” mean that a first element, such as a first structure, is on a second element, such as a second structure, where an intervening element, such as an interfacial structure, may be present between the first and second elements. Phrases such as “direct contact” mean that a first element, such as a first structure, and a second element, such as a second structure, are connected without any intermediate conductive, insulating, or semiconducting layer at the interface between the two elements. Note that the phrase “selective to,” e.g., “the first element is selective to the second element,” means that the first element can be etched and the second element can act as an etch stop.

[0048] Returning now to aspects of the present disclosure, as noted above, the dielectric solid material, also referred to as the switching dielectric, of an RRAM cell, which is normally insulating, can be made to conduct through filaments or conductive paths formed by the application of a sufficiently high voltage. As further noted above, it is desirable to be able to selectively heat the switching dielectric of a memory cell of an RRAM device. As described herein, embodiments of the present disclosure enable selective heating of the switching dielectric of a memory cell of an RRAM device.

[0049] FIG. 1 shows a flowchart of an exemplary method 100 of forming a computer memory device according to an embodiment of the present disclosure. Method 100 begins with the performance of operation 104, where a bottom electrode is formed. Method 100 proceeds with the performance of operation 108, where a proximity heater is formed. Method 100 proceeds with the performance of operation 112, where a further portion of the bottom electrode is formed. Method 100 proceeds with the performance of operation 116, where a memory component is formed. Method 100 proceeds with the performance of operation 120, where a top electrode is formed. As described more specifically below, the performance of each operation of method 100 may include the performance of several sub-operations. The performance of method 100 is described more specifically below with reference to FIGS. 2A-2K.

[0050] As described above, performing operation 104 includes forming a bottom electrode. More specifically, the bottom electrode may be formed of a conventional electrode material. Non-limiting examples of suitable electrode materials include TiN or W. The bottom electrode may be formed using known techniques outside the scope of this disclosure and, therefore, will not be described in greater detail herein.

[0051] Once the bottom electrode is formed, method 100 proceeds with the performance of operation 108, where a proximity heater is formed. According to at least one embodiment of the present disclosure, forming the proximity heater further includes forming an interlayer dielectric on top of the bottom electrode. As described in more detail below, the interlayer dielectric insulates the proximity heater from the bottom electrode. The interlayer dielectric may be formed from a typical interlayer dielectric material. Non-limiting examples of suitable interlayer dielectric materials include SiO2 or SiCOH. The interlayer dielectric may be formed using known techniques outside the scope of the present disclosure and, therefore, will not be described in greater detail herein.

[0052] 2A illustrates an exemplary computer memory device 200 following performance of the above-described portions of method 100. As shown, memory device 200 includes a bottom electrode 204 and an interlayer dielectric 208 formed on top of bottom electrode 204.

[0053] In accordance with at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes etching a trench in the dielectric material and depositing a heater metal therein. As described more particularly below, the heater metal is used to form the proximity heater of device 200 and is therefore a thermally and electrically conductive material. Thus, as noted above, the interlayer dielectric thermally and electrically insulates the bottom electrode from the heater metal to prevent shorting of the device. The heater metal may typically be a thermally and electrically conductive material. Non-limiting examples of suitable materials for the heater metal include TiN, W, or Cu.

[0054] 2B illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, a portion of interlayer dielectric 208 is removed to form a trench, which is filled with heater metal 212.

[0055] In accordance with at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes depositing a thin interlevel dielectric layer on top of the heater metal. As described more particularly below, the thin interlevel dielectric layer enables the formation of a proximity heater collar.

[0056] 2C shows an exemplary device 200 following performance of the above portion of method 100. As shown, a thin interlayer dielectric layer 216 has been deposited on top of heater metal 212. Thin interlayer dielectric layer 216 may be made of the same material as interlayer dielectric 208. Alternatively, thin interlayer dielectric layer 216 may be made of a different dielectric material than interlayer dielectric 208. In either case, thin interlayer dielectric layer 216 is made of a material that is thermally and electrically insulating.

[0057] In accordance with at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes etching a large via opening through the thin interlayer dielectric layer, the heater metal, and the interlayer dielectric. As described more particularly below, the via opening enables the formation of a collar for a proximate heater. More specifically, the additional heater metal is conformally deposited in the via opening so as to be in direct contact with the existing layer of heater metal. Thus, the via opening is formed to expose the inner sidewall of the existing layer of heater material. Furthermore, to prevent shorting between the proximate heater and the bottom electrode, the additional heater metal is separated from the bottom electrode by a remaining portion of the interlayer dielectric formed on top of the bottom electrode. Thus, the via opening is formed to extend through the entire thickness of the thin interlayer dielectric layer and the entire thickness of the heater metal, thereby extending through only a portion of the thickness of the interlayer dielectric.

[0058] 2D illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, via opening 220 extends through the entire thickness of thin interlayer dielectric layer 216 and the entire thickness of heater metal 212, and extends through only a portion of the thickness of interlayer dielectric 208. As shown, the inner sidewalls of the existing layer of heater metal 212 are exposed by via opening 220. Via opening 220 does not expose bottom electrode 204 due to the remaining thickness of interlayer dielectric 208.

[0059] In accordance with at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes conformally depositing an additional heater metal over the device. The additional heater metal covers the top surface of the thin interlayer dielectric layer and the top surface of the interlayer dielectric that forms the bottom of the via opening. Furthermore, the additional heater metal covers the thin interlayer dielectric layer that forms the sidewalls of the via opening, the existing layer of heater metal, and the exposed vertical surfaces of the interlayer dielectric. As a result, the additional heater metal is in direct contact with the existing layer of heater metal.

[0060] 2E illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, additional heater metal 224 has been conformally deposited on device 200, such that additional heater metal 224 covers the top surface of thin interlayer dielectric layer 216 and the top surface of interlayer dielectric 208, which forms the bottom of via opening 220. Additional heater metal 224 also covers thin interlayer dielectric layer 216, which forms the sidewalls of via opening 220, the existing layer of heater metal 212, and the exposed vertical surfaces of interlayer dielectric 208. As a result, additional heater metal 224 is in direct contact with the existing layer of heater metal 212. Also, as a result of the conformal deposition, additional heater metal 224 is formed integrally with the existing layer of heater metal 212, such that additional heater metal 224 and heater metal 212 form a single, continuous mass.

[0061] In accordance with at least one embodiment of the present disclosure, performing operation 108 of method 100 further includes performing an etch-back to remove horizontal portions of the additional heater metal. As a result, the remaining mass of heater metal and additional heater metal form a straight portion and a collar portion integrally formed with one another. Additionally, the continuous mass of heater metal and additional heater metal remaining after the etch-back includes an opening formed through the collar portion. Thus, performing the etch-back completes the formation of the proximity heater, and thus completes the performance of operation 108.

[0062] 2F illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, an etchback has been performed to remove horizontal portions of additional heater metal 224 covering the exposed top surfaces of thin interlayer dielectric layer 216 and interlayer dielectric 208. As a result, vertical portions of additional heater metal 224 remain covering the exposed vertical surfaces of thin interlayer dielectric layer 216, heater metal 212, and interlayer dielectric 208. Thus, the remaining additional heater metal 224 forms collar portion 226 of proximity heater 232. Furthermore, the remaining heater metal 212 forms straight portion 228 of proximity heater 232. As shown, collar portion 226 is in direct contact with and integrally formed with straight portion 228. Thus, proximity heater 232 is a continuous mass including straight portion 228 and collar portion 226. Additionally, as will be explained in more detail below, an opening 236 extending through the collar portion 226 of the proximity heater 232 is used to accommodate an additional portion of the bottom electrode therein.

[0063] 1 , following the performance of operation 108, method 100 proceeds with the performance of operation 112, where a further portion of the bottom electrode is formed. In accordance with at least one embodiment of the present disclosure, the performance of operation 112 includes forming a dielectric spacer over the device.

[0064] More specifically, in such embodiments, the dielectric spacer provides an insulating lining on the inner wall surface of the proximity heater. Thus, the dielectric spacer insulates a further portion of the bottom electrode from the collar portion of the proximity heater. Non-limiting examples of suitable materials for the dielectric spacer include SiN, AlN, or BN. Considering its function, the dielectric spacer is preferably made of a material that is electrically insulating to prevent short circuits between the proximity heater and the bottom electrode, and thermally conductive to allow heat transfer from the proximity heater to the memory component. Materials such as AlN and h-BN are good candidates.

[0065] 2G illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, dielectric spacers 240 have been conformally deposited on device 200 in a manner substantially similar to the additional heater metal described above. Thus, dielectric spacers 240 cover the exposed horizontal surfaces of thin interlevel dielectric layer 216 and interlevel dielectric 208. Dielectric spacers 240 also cover the exposed vertical surfaces within opening 236. Thus, dielectric spacers 240 cover the exposed vertical surfaces of collar portion 226 of proximity heater 232.

[0066] In accordance with at least one embodiment of the present disclosure, performing operation 112 of method 100 further includes performing an etch-back of the dielectric spacers such that the dielectric spacers remain in the collar opening only on vertical surfaces. In other words, performing the etch-back removes the dielectric spacers from all horizontal surfaces of the device.

[0067] 2H illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, dielectric spacers 240 have been etched back to remain only on the vertical surfaces of collar portion 226 of proximity heater 232. Notably, the horizontal top surfaces of collar portion 226, which are substantially coplanar with the top surface of thin interlevel dielectric layer 216, are exposed by the etchback of dielectric spacers 240.

[0068] In accordance with at least one embodiment of the present disclosure, performing operation 112 of method 100 further includes selectively etching the interlayer dielectric through the opening in the proximity heater, thereby exposing a portion of the top surface of the bottom electrode thereunder.

[0069] 2I illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, interlayer dielectric 208 has been selectively etched through opening 236 to expose a portion of the top surface of bottom electrode 204 at the bottom of device 200. In other words, etching interlayer dielectric 208 causes opening 236 to extend down to the top surface of bottom electrode 204.

[0070] According to at least one embodiment of the present disclosure, performing operation 112 of method 100 further includes filling the opening with an additional electrode material such that the additional electrode material is in direct contact with the exposed portion of the bottom electrode. The additional electrode material may be the same material as that used to form the bottom electrode. Thus, the additional electrode material forms an additional portion of the bottom electrode integrally formed with the bottom electrode. Thus, following performance of this portion of operation 112, the additional portion of the bottom electrode and the bottom electrode collectively form a continuous mass that is the bottom electrode.

[0071] According to at least some embodiments of the present disclosure, performing operation 112 further includes polishing a top surface of the additional portion of the bottom electrode so that the top surface of the additional portion of the bottom electrode is substantially coplanar with a top surface of the thin interlayer dielectric layer, the collar portion of the proximity heater, and the dielectric spacer. Polishing may be accomplished, for example, by performing a chemical-mechanical polishing (CMP) procedure.

[0072] 2J illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, opening 236 (shown in FIG. 2I) is filled with additional electrode material, such that the additional electrode material is in direct contact with and integrally formed with bottom electrode 204. As a result, the completed bottom electrode 204, including the additional electrode material, is a continuous mass extending from the bottom surface of device 200 through all existing layers of device 200, and is substantially flush with the top surface of thin interlayer dielectric layer 216, collar portion 226 of proximity heater 232, and dielectric spacer 240.

[0073] In other words, according to the embodiment of device 200, opening 236 (shown in FIG. 2I) extends through proximity heater 232, and bottom electrode 204 is at least partially disposed within opening 236. More specifically, a further portion of bottom electrode 204 is disposed within opening 236 such that bottom electrode 204 is separated from proximity heater 232 by dielectric spacer 240.

[0074] Returning to FIG. 1 , following the performance of operation 112, method 100 proceeds with the performance of operation 116, in which a memory component of the device is formed. In accordance with at least one embodiment of the present disclosure, performance of operation 116 includes forming a switching dielectric material layer on the top surface of the device. As described above, a switching dielectric material is a dielectric solid material, which is typically insulating, that can be made conductive through filaments or conductive paths formed through the dielectric solid material by applying a sufficiently high voltage. The memory component includes the switching dielectric material layer. In other words, the memory component is made of a dielectric solid material. In accordance with at least one embodiment of the present disclosure, the memory component does not include any additional elements. In such an embodiment, the memory component is a dielectric solid material layer.

[0075] The memory component is in direct contact with the top surface of the bottom electrode, the thin interlayer dielectric layer, the adjacent heater collar, and the dielectric spacer. The switching dielectric material from which the memory component is made can be a material typically used as a switching material in RRAM cells. A non-limiting example of a suitable material for the memory component is HfO. x or TaO x Includes.

[0076] Following the performance of operation 116, method 100 proceeds with the performance of operation 120, in which a top electrode is formed. The top electrode is formed in direct contact with the top surface of the memory component. The top electrode may be made of a known electrode material. The top electrode may be made of the same material as the bottom electrode. Alternatively, the top electrode may be made of a different material than the bottom electrode.

[0077] 2K illustrates an exemplary device 200 following performance of the above portion of method 100. As shown, a memory component 244 made of a dielectric solid material has been formed in direct contact with the top surface of bottom electrode 204, thin interlayer dielectric layer 216, collar portion 226 of proximity heater 232, and dielectric spacer 240. Thus, memory component 244 is separated from straight portion 228 of proximity heater 232 by thin interlayer dielectric layer 216.

[0078] 2K, the top electrode 248 is formed in direct contact with the top surface of the memory component 244. Thus, the top electrode 248 is separated from the bottom electrode 204, the thin interlayer dielectric layer 216, the proximity heater 232, and the dielectric spacer 240 by the memory component 244.

[0079] FIG. 2K illustrates an exemplary device 200 following completion of execution of method 100. FIGS. 3A and 3B illustrate perspective and plan views, respectively, of the portion of device 200 illustrated in FIG. 2K. To facilitate a clearer view of proximity heater 232, among other things, the view illustrated in FIG. 3A does not include thin interlayer dielectric layer 216, interlayer dielectric 208, or dielectric spacer 240 (shown in FIG. 2K). Additionally, to further facilitate a clearer view of proximity heater 232, memory component 244 is shown as transparent in the view illustrated in FIG. 3A. In FIG. 3B, to facilitate a clearer view of proximity heater 232, only the proximity heater 232, dielectric spacer 240, and a further portion of bottom electrode 204 extending through opening 236 (shown in FIG. 2I) are shown.

[0080] As shown, the exemplary device 200 includes a bottom electrode 204, a top electrode 248, a memory component 244, a proximity heater 232, and a dielectric spacer 240. The memory component 244 is disposed between and in direct contact with the top electrode 248 and the bottom electrode 204. Thus, a filament F (shown in FIG. 2K ) can be formed in the memory component 244 by applying a current between the bottom electrode 204 and the top electrode 248 through the dielectric solid material making up the memory component 244. As described above, applying a current between the bottom electrode 204 and the top electrode 248, thereby forming the filament F, is referred to as “forming” the filament F. The proximity heater 232 is configured to increase the temperature of a portion of the memory component 244. Specifically, the proximity heater 232 is configured to increase the temperature of at least the portion of the dielectric solid material of the memory component 244 in which the filament F is formed.

[0081] Thus, the proximity heater 232 allows for selective heating of the dielectric solid material of the memory component 244. As described above, this selective heating allows for a reduction in the applied voltage required for forming and a reduction in the time required to form the filament in the dielectric solid material of the memory component 244. This selective heating also allows for such an advantage in RRAM devices without unnecessarily heating other elements of the device.

[0082] 3A and 3B, the proximity heater 232 is configured to be operated independently of the top and bottom electrodes 248, 204. More specifically, the proximity heater 232 is electrically connected between terminals T1 and T2, such that current between terminals T1, T2 is conducted through the proximity heater 232. The top and bottom electrodes 248, 204 are electrically connected to terminals T3 and T4, such that current between terminals T3, T4 is conducted through the bottom electrode, the memory component 244, and the top electrode 248. Thus, the proximity heater 232 can be operated to raise the temperature of the memory component 244 only during the forming procedure. At all other times, read and write currents can flow between terminals T3, T4 through the memory component 244 without operating the proximity heater 232. Accordingly, embodiments of the present disclosure enable temporally and spatially selective heating of the memory component 244 only during the forming procedure.

[0083] Notably, the embodiment of device 200 shown herein depicts the further portion of the bottom electrode as being substantially cylindrical and the opening in the proximity heater as also being substantially cylindrical, such that the opening is substantially concentric with the further portion of the bottom electrode, and such that the dielectric spacer is substantially annular so as to fill the space between the proximity heater and the further portion of the bottom electrode. However, it should be noted that in alternative embodiments, the further portion of the bottom electrode, the opening, and the dielectric spacer may have different shapes. Also, in alternative embodiments, the bottom electrode and the opening may have different shapes from one another.

[0084] 2K and 3B, the dielectric spacer 240 of the device 200 is in direct contact with the proximity heater 232 and in direct contact with the bottom electrode 204. As mentioned above, the dielectric spacer 240 electrically isolates the proximity heater 232 from the bottom electrode 204, thus preventing short circuits therebetween.

[0085] 3A, in accordance with the embodiment of device 200, proximity heater 232 includes straight portion 228 and collar portion 226 integrally formed with straight portion 228. Opening 236 extends through collar portion 226 of proximity heater 232. However, alternative embodiments of the present disclosure may differ from device 200 by omitting the collar portion.

[0086] For example, Figures 4A and 4B illustrate one embodiment of device 300 having substantially similar structure and function to device 200, except that proximity heater 332, as shown, lacks a collar. In other words, proximity heater 332 includes only a straight portion 328. Thus, as shown in Figure 4A, opening 336 extends through straight portion 328. Like device 200, device 300 includes a dielectric spacer 340 that separates proximity heater 332 from bottom electrode 304. As shown in Figure 4B, due to the absence of a collar, dielectric spacer 340 is in direct contact with thin interlayer dielectric layer 316 above proximity heater 332 and interlayer dielectric 308 below proximity heater 332.

[0087] Like device 200, device 300 may also be formed by performing method 100 shown in Figure 1. However, because the proximity heater of device 300 does not include a collar portion, forming device 300 does not include those sub-operations of method 100 that result in the formation of a collar portion. In other words, performing operation 108, in which the proximity heater is formed, to form device 300 does not include conformally depositing additional heater metal on the device and therefore etching back its horizontal portions.

[0088] 4B, device 300 includes thin interlayer dielectric layer 316. However, as described more particularly below, alternative embodiments of the present disclosure may differ from device 300 by omitting thin interlayer dielectric layer 316.

[0089] For example, Figures 5A and 5B illustrate one embodiment of device 400 having substantially similar structure and function to device 300, except that device 400, as shown, lacks a thin interlayer dielectric layer between proximity heater 432 and memory component 444. The view of device 400 shown in Figure 5A appears identical to the view of device 300 shown in Figure 4A because only proximity heater 432, dielectric spacer 440, and bottom electrode 404 are shown. However, as shown in Figure 5B, proximity heater 432 is in direct contact with memory component 444 along the entirety of proximity heater 432, except within opening 436 (shown in Figure 5A).

[0090] In such embodiments, if current is conducted through the proximity heater 432, one possible way to prevent a filament from forming in the memory component between the proximity heater 432 and the top electrode 448 is to ensure that the proximity heater 432 is programmed using a voltage close to that of the top electrode 448, so that little electric field develops between the proximity heater 432 and the top electrode 448. Furthermore, in such embodiments, the material used to form the dielectric spacer 440 needs to have a very high breakdown field to prevent breakdown of the material of the dielectric spacer 440. Alternatively, a thin electrical insulator can be formed between the proximity heater 432 and the memory component 444. For example, a thin interlayer dielectric layer included in other embodiments serves this function.

[0091] Like device 300, device 400 may also be formed by performing method 100 shown in Figure 1. However, because the proximity heater of device 400 does not include a thin interlayer dielectric layer, forming device 400 does not include those sub-operations of method 100 that result in the formation of a thin interlayer dielectric layer. In other words, to form device 400, performing operation 108, in which the proximity heater is formed, does not include depositing a thin interlayer dielectric layer on top of the heater metal.

[0092] 2K and 3A , in accordance with an embodiment of device 200, proximity heater 232 is disposed between top electrode 248 and bottom electrode 204. Accordingly, proximity heater 232 is disposed proximate memory component 244 to facilitate efficient, selective heating of the switching dielectric of memory component 244. More specifically, in accordance with an embodiment of device 200, proximity heater 232 is in direct contact with memory component 244. However, alternative embodiments of the present disclosure can differ from device 200 by forming the device such that the proximity heater is disposed above the top electrode. In other words, in alternative embodiments of the present disclosure, the top electrode can be disposed between the proximity heater and the memory component. In such embodiments, the top electrode is also disposed between the proximity heater and the bottom electrode.

[0093] 6A and 6B illustrate an embodiment of a device 500 having substantially similar structure and function to device 200, except that the proximity heater 532 is separated from the memory component 544 by the top electrode 548 as shown. Accordingly, in such an embodiment, the dielectric spacer 540 is formed in direct contact with the top electrode 548, rather than the bottom electrode 504, to prevent shorting with the top electrode 548. The proximity heater 532 is not formed to avoid contact with the bottom electrode 504 between the bottom electrode 504 and the memory component 544. Such an embodiment of the proximity heater 532 need not include a collar or opening.

[0094] 6A, a channel is formed in the top electrode 548, the channel is covered with a dielectric spacer 540, and a proximity heater 532 is formed in the dielectric spacer 540 to prevent shorting between the top electrode 548 and the proximity heater 532. As shown in FIG. 6A, with such an embodiment of the device 500, the top surface of the proximity heater 532 is substantially flush with the top surface of the top electrode 548.

[0095] However, in alternative embodiments, the proximity heater 532 may be formed on top of the top surface of the top electrode 548, rather than being embedded in a channel within the top surface of the top electrode 548. In such embodiments, the top surface of the proximity heater 532 is not substantially coplanar with the top surface of the electrode 548.

[0096] According to some embodiments of the present disclosure, a device may also include multiple proximity heaters constructed and arranged to increase the temperature of the same portion of the dielectric solid material of a memory component. For example, in Figure 7, device 600 is shown including a first proximity heater 632a (similar to proximity heater 232 of device 200) disposed between top electrode 648 and bottom electrode 604, and a second proximity heater 632b (similar to proximity heater 532 of device 500) disposed above top electrode 648. In other words, top electrode 648 is disposed between first proximity heater 632a and second proximity heater 632b.

[0097] According to some embodiments of the present disclosure, a device may include multiple proximity heaters configured to elevate the temperature of different portions of a memory component or different portions of different memory components. According to some embodiments, multiple proximity heaters may be arranged in series with one another. Thus, according to some embodiments, multiple proximity heaters may be operated substantially simultaneously. For example, FIG. 8 illustrates a device 700 including a first proximity heater 732a and a second proximity heater 732b. Each of the proximity heaters 732 illustrated in FIG. 8 is substantially similar to proximity heater 232 of device 200. However, in alternative embodiments, each proximity heater may be substantially similar to a proximity heater of any device disclosed herein.

[0098] In addition to the embodiments described above, other embodiments are contemplated to have fewer, more, or different operational steps. Also, in some embodiments, some or all of the operational steps may be performed in a different order. Furthermore, multiple operations may occur simultaneously or as part of a larger process.

[0099] As noted above, reference is made to various embodiments. However, it should be understood that the present disclosure is not limited to the specifically described embodiments. Alternatively, any combination of the described features and elements, whether related to different embodiments or not, is contemplated for making and practicing the present disclosure. Many modifications and variations may be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. Moreover, while embodiments of the present disclosure may achieve other possible solutions or advantages over the prior art, whether or not a particular advantage is achieved by a given embodiment does not limit the present disclosure. Thus, the described aspects, features, embodiments, and advantages are merely exemplary and should not be considered elements or limitations of the appended claims unless explicitly recited in the claims.

[0100] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit various embodiments. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It will be further understood that the terms "includes" or "including," or combinations thereof, when used herein, specify the presence of stated features, integers, steps, operations, elements, or components, or combinations thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof, or combinations thereof. In the preceding detailed description of exemplary embodiments of various embodiments, reference has been made to the accompanying drawings (in which like numerals represent like elements), which form a part of this specification, and which show, by way of illustration, specific exemplary embodiments in which the various embodiments may be practiced. These embodiments have been described in sufficient detail to enable those skilled in the art to practice the embodiments, but other embodiments may be used, and logical, mechanical, electrical, and other changes may be made without departing from the scope of the various embodiments. In the foregoing description, numerous specific details have been set forth to provide a thorough understanding of the various embodiments. However, various embodiments may be practiced without these specific details. In other instances, well-known circuits, structures and techniques have not been shown in detail in order not to obscure the embodiments.

[0101] As used herein, "plurality," when used in reference to an item, means one or more of the item. For example, "several different types of networks" means one or more different types of networks.

[0102] Where different reference numerals include a common number followed by a different letter (e.g., 100a, 100b, 100c), or a separator character followed by a different number (e.g., 100-1, 100-2, or 100.1, 100.2), the use of a reference letter without a letter or a following number (e.g., 100) may refer to the entire group of elements, any subset of the group, or an illustrative exemplar of the group.

[0103] Furthermore, the phrase "at least one of," when used in conjunction with a list of items, means that one or more different combinations of the listed items may be used, and that only one of each item included in the list may be required. In other words, "at least one" means that any combination of the listed items and number of items may be used, but not all items in the list are required. An item may be a particular object, thing, or category.

[0104] For example, without limitation, "at least one of item A, item B, or item C" may include item A, item A and item B, or item B. This example may also include item A, item B, and item C, or item B and item C. Of course, any combination of these items may be present. In some illustrative examples, "at least one" may be, for example, without limitation, 2 items A, 1 item B, 10 items C, 4 items B, and 7 items C, or other suitable combinations.

[0105] Different instances of the term "embodiment" as used herein do not necessarily refer to the same embodiment, but may refer to the same embodiment. Any data and data structures shown or described herein are merely examples; other embodiments may use different amounts of data, types of data, fields, numbers and types of fields, field names, numbers and types of rows, records, entries, or organizations of data. Furthermore, any data may be combined with logic such that a separate data structure may not be necessary. Accordingly, the foregoing detailed description should not be taken in a limiting sense.

[0106] The descriptions of various embodiments of the present disclosure have been presented for illustrative purposes, but are not intended to be exhaustive or limiting of the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein has been selected to best explain the principles of the embodiments, practical applications, or technical improvements over commercially available technologies, or to enable others skilled in the art to understand the embodiments disclosed herein.

[0107] While the present invention has been described in terms of specific embodiments, it is anticipated that variations and modifications thereto will become apparent to those skilled in the art. It is therefore intended that the following claims be interpreted to cover all such variations and modifications as fall within the true spirit and scope of the invention.

Claims

1. bottom electrode; Upper electrode; a memory component made of a dielectric solid material, said memory component being disposed between said top electrode and said bottom electrode and in direct contact with said top electrode and said bottom electrode; a proximity heater configured to increase the temperature of a portion of the memory component; and a layer of dielectric material in direct contact with the proximity heater; Equipped with The dielectric material layer is in direct contact with one of the bottom electrode and the top electrode. Computer memory device.

2. The computer memory device of claim 1 , wherein the proximity heater is disposed between the top electrode and the bottom electrode.

3. The computer memory device of claim 2 , wherein the proximity heater is in direct contact with the memory component.

4. the proximity heater includes an aperture therethrough; and The bottom electrode is at least partially disposed within the opening.

3. The computer memory device of claim 2.

5. the proximity heater includes a straight portion and a collar portion integrally formed with the straight portion; and The opening extends through the collar portion.

5. The computer memory device of claim 4.

6. an additional proximity heater configured to increase the temperature of the portion of the memory component; and a further layer of dielectric material in direct contact with the further proximity heater; Furthermore, The further layer of dielectric material is in direct contact with another of the bottom electrode and the top electrode.

10. A computer memory device according to any one of the preceding claims.

7. the proximity heater is disposed between the top electrode and the bottom electrode; and The upper electrode is disposed between the proximity heater and the further proximity heater.

7. The computer memory device of claim 6.

8. The top electrode is disposed between the proximity heater and the bottom electrode.

10. A computer memory device according to any one of the preceding claims.

9. the upper electrode including a channel formed therein; and The proximity heater is disposed at least partially within the channel.

9. The computer memory device of claim 8.

10. The dielectric material layer is disposed within the channel such that the dielectric material layer separates the proximity heater from the upper electrode.

10. The computer memory device of claim 9.

11. The top surface of the proximity heater is substantially coplanar with the top surface of the upper electrode.

11. The computer memory device of claim 10.

12. More Memory Components Furthermore, The proximity heater is configured to increase the temperature of a portion of the additional memory component.

10. A computer memory device according to any one of the preceding claims.

13. 1. A heating device configured to increase a temperature of a portion of a dielectric solid state material of at least one resistive random access memory component, the heating device comprising: a heater material layer; a dielectric material layer in direct contact with the heater material layer, the dielectric material layer in direct contact with one of a top electrode and a bottom electrode of the at least one resistive random access memory component; and a first terminal and a second terminal configured to pass a current through the heater material layer, the first terminal and the second terminal configured to be operated independently of terminals operating the top and bottom electrodes; A heating device comprising:

14. the heater material layer includes an opening therethrough; and The opening is configured to receive a portion of the bottom electrode therein such that the heater material layer does not directly contact the portion of the bottom electrode.

14. The heating device of claim 13.

15. the heater material layer includes a straight portion and a collar portion integrally formed with the straight portion; and The opening is formed through the collar portion.

15. The heating device of claim 14.

16. The heater material layer includes a top surface that is substantially coplanar with a top surface of the top electrode. A heating device according to any one of the preceding claims 13 to 15.

17. The dielectric material layer is in direct contact with one of a further top electrode and a further bottom electrode of the at least one further resistive random access memory component. A heating device according to any one of the preceding claims 13 to 16.

18. the heater material layer includes an opening therethrough and a further opening therethrough; the opening is configured to receive a portion of the bottom electrode therein such that the heater material layer is not in direct contact with the portion of the bottom electrode; and The further opening is configured to receive the portion of the further bottom electrode therein such that the heater material layer is not in direct contact with the portion of the further bottom electrode.

18. The heating device of claim 17.

19. 1. A method of forming a resistive random access memory component, the method comprising: forming a bottom electrode; forming a proximity heater spaced from the bottom electrode by the dielectric spacer such that a portion of the bottom electrode extends through a first opening in the proximity heater and a second opening in the dielectric spacer; forming a memory element made of a dielectric solid material in direct contact with said portion of said bottom electrode; and forming a top electrode in direct contact with the memory element; A method for providing

20. forming the proximity heater; forming a heater material layer spaced apart from a further portion of the bottom electrode by the interlayer dielectric; and forming the first opening through the heater material layer and the interlayer dielectric to expose a top surface of the further portion of the bottom electrode; and The portion of the bottom electrode is configured to be in direct contact with the top surface of the further portion of the bottom electrode.

20. The method of claim 19.

21. Forming the proximity heater further includes forming a collar of the heater material in direct contact with the heater material layer such that the collar lines the first opening.

21. The method of claim 20.

22. 1. A method of forming a resistive random access memory component, the method comprising: forming a bottom electrode; forming a memory element made of a dielectric solid material in direct contact with said bottom electrode; forming a top electrode in direct contact with the memory element; and forming a proximity heater configured to increase a temperature of at least a portion of the memory element, the proximity heater being spaced from the top electrode by a dielectric spacer; A method for providing

23. forming the top electrode includes forming a channel in a top surface of the top electrode; and Forming the proximity heater includes forming the proximity heater within the channel.

23. The method of claim 22.

24. Forming the proximity heater further includes forming the proximity heater such that a top surface of the proximity heater is substantially coplanar with a top surface of the upper electrode.

24. The method of claim 23.

25. bottom electrode; Upper electrode; a memory component made of a dielectric solid material, said memory component being disposed in direct contact with said top electrode and said bottom electrode; a proximity heater disposed between the top electrode and the bottom electrode, configured to increase the temperature of a portion of the memory component; and a layer of dielectric material in direct contact with the proximity heater and in direct contact with the bottom electrode; 1. A computer memory device comprising:

Images