Droplet stream alignment mechanism and method

The alignment mechanism for droplet streams in EUV generation addresses targeting uncertainty, enhancing accuracy and reducing contamination, thus improving lithography precision.

JP2025537678APending Publication Date: 2025-11-20ASML NETHERLANDS BV
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Patent Information

Application Number
JP2025524179
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-11-16
Filing Date
2023-11-07
Publication Date
2025-11-20

AI Technical Summary

Technical Problem

The uncertainty in targeting droplet streams during EUV generation leads to contamination and instability, affecting the accuracy of lithography processes.

Method used

An alignment mechanism with first and second portions is used to adjust the nozzle, ensuring droplets travel along the desired path, comprising a cradle, clamps, spherical bearings, and adjustment mechanisms for precise alignment.

Benefits of technology

Enhances the accuracy of EUV generation by controlling droplet targeting, reducing contamination and instability, thereby improving the precision of lithography processes.

✦ Generated by Eureka AI based on patent content.

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Abstract

A system is provided that can reduce EUV generation instability to improve the accuracy of EUV lithography tools. The system (600) includes a first portion (604) and a second portion (606) of an alignment mechanism. The first portion is coupled to a nozzle (602) in a droplet generating device. The second portion is coupled to an exterior surface (608) of the droplet generating device. The second portion includes a second adjustment mechanism (612) for adjusting a first adjustment mechanism (610) of the first portion to align the nozzle so that droplets travel from the nozzle substantially along a droplet path (614).
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Description

[Technical Field]

[0001] (CROSS-REFERENCE TO RELATED APPLICATIONS)

[0001] This application claims priority to U.S. Patent Application No. 63 / 384,071, filed November 16, 2022, which is incorporated herein by reference in its entirety.

[0002] FIELD OF THE INVENTION

[0002] This application relates to extreme ultraviolet ("EUV") radiation sources and methods. In one exemplary application, EUV radiation can be used as exposure radiation in lithography processes for manufacturing semiconductor devices. [Background technology]

[0003] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that case, patterning devices, often referred to as masks or reticles, can be used to generate a circuit pattern that will be formed in an individual layer of the IC. This pattern can be transferred onto the target portion (e.g. comprising part of a die, one die or several dies) on the substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (photoresist or simply "resist") provided on the substrate. Typically, a single substrate will contain a network of adjacent target portions that are successively patterned. Conventional lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing the entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the radiation beam in a given direction (the "scan" direction) while the target portion is synchronously scanned parallel or anti-parallel to the given direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.

[0004]

[0004] Lithographic apparatus typically include an illumination system that conditions radiation generated by a radiation source before it is incident on a patterning device. A patterned beam of EUV light can be used to create extremely small features on a substrate. Extreme ultraviolet light (sometimes referred to as soft x-ray) is generally defined as electromagnetic radiation having a wavelength in the range of about 5 to 100 nm. One particular wavelength of interest in photolithography is 13.5 nm.

[0005]

[0005] Methods for producing EUV light include converting a source material into a plasma state that includes, but is not necessarily limited to, chemical elements that have emission lines in the EUV range, including, but not necessarily limited to, xenon, lithium, and tin.

[0006] In one such method, often referred to as laser-produced plasma ("LPP"), the desired plasma can be generated by irradiating a source material, for example in the form of droplets, a stream, or a wire, with a laser beam. In another method, often referred to as discharge-produced plasma ("DPP"), the required plasma can be generated by positioning a source material with an appropriate emission line between a pair of electrodes and striking an electrical discharge between the electrodes.

[0007]

[0007] One technique for generating droplets involves melting a target material, such as tin, and then extruding it under high pressure through a relatively small diameter nozzle opening, such as an opening with a diameter of about 0.5 pm to about 30 pm, to generate a droplet stream with a droplet velocity in the range of about 30 m / s to about 150 m / s. The nozzle capillary material and design structure can be subject to uncertainty. If the uncertainty is too large, droplets may contact ancillary devices near the droplet stream path, thereby contaminating the impacted devices. Furthermore, large uncertainty can adversely affect EUV generation, which in turn can affect the accuracy of lithography processes that rely on EUV radiation. Summary of the Invention

[0008]

[0008] Therefore, it is desirable to control the targeting of the droplet stream in situ to ensure that the droplets contact the laser so that they are converted into a plasma that emits EUV radiation, and similarly, it is desirable to reduce the instability of EUV generation to improve the accuracy of EUV lithography equipment.

[0009] In some embodiments, the system includes first and second portions of an alignment mechanism. The first portion is coupled to the nozzle and is disposed within the droplet generating device. The second portion is coupled to an exterior surface of the droplet generating device. The second portion includes a second adjustment mechanism for adjusting the first adjustment mechanism of the first portion to align the nozzle so that droplets travel from the nozzle substantially along the droplet path. In some embodiments, the alignment mechanism is used to align the component in position prior to installation. In some embodiments, the alignment mechanism is a steering mechanism for fine-tuning the positioning of the nozzle.

[0010] In some embodiments, a method includes generating droplets from a nozzle of a droplet generating device. The nozzle is coupled to a first portion of an alignment mechanism. The method further includes delivering the droplets toward a target area. The method further includes determining a position of the droplet stream relative to the target area. The method further includes adjusting a position of the nozzle based on the determination through interaction of the first portion of the alignment mechanism and a second portion of the alignment mechanism. The second portion is coupled to an exterior surface of the droplet generating device.

[0011] In some embodiments, the system includes first and second portions of an alignment mechanism. The first portion is coupled to a nozzle within a droplet generating device. The first portion includes a first adjustment mechanism. The second portion is coupled to an exterior surface of the droplet generating device. The second portion includes a second adjustment mechanism for adjusting the first adjustment mechanism to align the nozzle so that droplets travel from the nozzle substantially along the droplet path. The first adjustment mechanism includes a cradle for holding the nozzle, at least one clamp for attaching the nozzle to the cradle, and a spherical bearing. The spherical bearing includes a spherical structure supported in a groove and a leaf spring for biasing the spherical structure toward the groove. The second adjustment mechanism includes a base rigidly coupled to the nozzle and a mounting plate coupled to a frame of the system. The mounting plate is disposed on the base. The second adjustment mechanism further includes a pad rigidly coupled to the mounting plate and an intermediate structure rigidly coupled to the base. The intermediate structure is coupled to the pad. The second adjustment mechanism further includes a locking device for locking the base to the mounting plate.

[0012]

[0012] Further features of various embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the present disclosure is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative purposes only. Based on the teachings contained herein, additional embodiments will be apparent to those skilled in the art. [Brief explanation of the drawings]

[0013]

[0013] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate the present disclosure and, together with the description, serve to explain the principles of the present disclosure and to enable those skilled in the art to make and use the embodiments described herein.

[0014] [Figure 1] 1 illustrates a reflective lithographic apparatus according to some embodiments; [Figure 2A]

[0015] 1 shows details of a reflective lithographic apparatus according to some embodiments; [Figure 2B] 1 shows details of a reflective lithographic apparatus according to some embodiments; [Figure 3] 1 shows details of a reflective lithographic apparatus according to some embodiments; [Figure 4]

[0016] 1 illustrates a lithographic cell according to some embodiments. [Figure 5]

[0017] 1 illustrates a source material delivery system according to some embodiments. [Figure 6]

[0018] 1 illustrates a droplet generator device according to some embodiments. [Figure 7] 1 illustrates a droplet generator device according to some embodiments. [Figure 8]

[0019] 1 illustrates an adjustment mechanism according to some embodiments. [Figure 9A]

[0020] 1 illustrates a spherical bearing according to some embodiments. [Figure 9B]

[0020] A spherical bearing according to some embodiments is shown. [Figure 9C]

[0020] A spherical bearing according to some embodiments is shown. [Figure 10]

[0021] 1 illustrates an adjustment mechanism according to some embodiments. [Figure 11]

[0021] An adjustment mechanism according to some embodiments is shown. [Figure 12A]

[0021] An adjustment mechanism according to some embodiments is shown. [Figure 12B]

[0021] An adjustment mechanism according to some embodiments is shown. [Figure 13]

[0022] 1 is a flowchart illustrating operations of a method for adjusting the direction of a droplet stream, according to some embodiments. [Figure 14A]

[0023] 1 illustrates portions of a steering mechanism according to some embodiments. [Figure 14B]

[0024] 1 shows an embodiment of a motor drive of parts of the steering mechanism.

[0015]

[0025] Features of the present disclosure will become more apparent from the following detailed description when read in conjunction with the drawings. Like reference symbols identify corresponding elements throughout the drawings. In the drawings, like reference numbers generally indicate identical, functionally similar, and / or structurally similar elements. Furthermore, the leftmost digit(s) of a reference number generally identifies the figure in which that reference number first appears. Unless otherwise indicated, the figures provided throughout this disclosure should not necessarily be construed as being drawn to scale. DETAILED DESCRIPTION OF THE INVENTION

[0016]

[0026] This specification discloses one or more embodiments incorporating features of the present disclosure. One or more disclosed embodiments are provided by way of example. The scope of the present disclosure is not limited to the disclosed embodiment or embodiments. Claimed features are defined by the appended claims.

[0017]

[0027] References herein to one or more described embodiments, as well as to "one embodiment," "an embodiment," "an exemplary embodiment," "an example embodiment," and the like, indicate that one or more described embodiments may include a particular feature, structure, or characteristic, but not all embodiments necessarily include that particular feature, structure, or characteristic. Moreover, such phrases do not necessarily refer to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in connection with one embodiment, it will be understood that it is within the knowledge of one skilled in the art to achieve that particular feature, structure, or characteristic in connection with other embodiments, whether or not explicitly described.

[0018]

[0028] For ease of description, spatially relative terms such as "beneath," "below," "lower," "above," "on," and "upper" may be used herein to describe the relationship of one element or feature shown in the figures to one or more other elements or features. Spatially relative terms are intended to encompass various orientations of the device in use or operation in addition to the orientation shown in the figures. The device may be in other orientations (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may be similarly interpreted accordingly.

[0019]

[0029] The term "about" can be used herein to indicate a value of a given quantity that can vary based on a particular technique. Based on a particular technique, the term "about" can indicate, for example, that the value of a given quantity varies within 10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

[0020]

[0030] Embodiments of the present disclosure may be implemented in hardware, firmware, software, or any combination thereof. Also, embodiments of the present disclosure may be implemented as instructions stored on a non-transitory machine-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM), random-access memory (RAM), magnetic disk storage media, optical storage media, flash memory devices, electrical, optical, acoustic, or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Furthermore, firmware, software, routines, and / or instructions may be described herein as performing certain actions. However, it will be appreciated that such description is merely for convenience and that such actions may actually result from a computing device, processor, controller, or other device executing the firmware, software, routines, instructions, etc.

[0021]

[0031] However, before describing such embodiments in further detail, it is beneficial to present an exemplary environment in which embodiments of the present disclosure can be implemented.

[0022]

[0032] Exemplary Lithography System

[0033] Figure 1 shows a lithographic apparatus 100 in which embodiments of the present disclosure can be implemented. The lithographic apparatus 100 can include the following structures: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., deep ultraviolet or extreme ultraviolet radiation); a support structure (e.g., a mask table) MT configured to support a patterning device (e.g., a mask, reticle, or dynamic patterning device) MA and connected to a first positioner PM configured to accurately position the patterning device MA; and a substrate table (e.g., a wafer table) WT configured to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate W. The lithographic apparatus 100 also includes a projection system PS configured to project a pattern imparted to the radiation beam B by the patterning device MA onto a target portion C of the substrate W (e.g., comprising one or more dies). In the lithographic apparatus 100, the patterning device MA and the projection system PS are reflective.

[0023]

[0034] The illumination system IL may include various types of optical components, such as refractive, reflective, catadioptric, magnetic, electromagnetic, electrostatic and / or other types of optical components, or any combination thereof, for directing, shaping or controlling the radiation beam B. The illumination system IL may also include sensors ES that provide measurements of one or more of, for example, energy per pulse, photon energy, intensity, average power, etc. The illumination system IL may include a measurement sensor MS for measuring displacement of the radiation beam B, and a uniformity compensator UC that allows the illumination slit uniformity to be controlled. The measurement sensor MS may be located at other positions, for example, the measurement sensor MS may be located on or near the substrate table WT.

[0024]

[0035] The support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device MA relative to a reference frame, the design of the lithographic apparatus 100, and other conditions, such as whether or not the patterning device MA is held in a vacuum environment. The support structure MT may use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device MA. The support structure MT may be, for example, a frame or a table, and may be fixed or movable as required. By using sensors, the support structure MT can ensure that the patterning device MA is at a desired position, for example with respect to the projection system PS.

[0025]

[0036] The term "patterning device" MA should be interpreted broadly as referring to any device that can be used to impart a radiation beam B with a pattern in its cross-section to create a pattern in a target portion C of the substrate W. The pattern imparted to the radiation beam B may correspond to a particular functional layer in a device being created in the target portion C to form an integrated circuit.

[0026]

[0037] The patterning device MA may be of a reflective type. Examples of patterning devices MA include reticles, masks, programmable mirror arrays, or programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam B in different directions. The tilted mirrors impart a pattern to the radiation beam B, which is reflected by the small mirror matrix.

[0027]

[0038] The term "projection system" PS may encompass any type of projection system, including refractive optical systems, catadioptric systems, magnetic optical systems, electromagnetic optical systems, and electrostatic optical systems, or any combination thereof, as appropriate to the exposure radiation used and other factors such as the use of an immersion liquid or a vacuum on the substrate W. A vacuum environment may be used for EUV or electron beam radiation, as other gases may be too absorbing of the radiation or electrons. Therefore, a vacuum environment may be provided throughout the beam path using a vacuum wall and vacuum pumps.

[0028]

[0039] Lithographic apparatus 100 may be of a type having two (dual stage) or more substrate tables WT (and / or two or more mask tables). In such a "multi-stage" machine, the additional substrate tables WT may be used in parallel, or one or more substrate tables WT may be used for exposure while one or more other tables perform preparatory steps. In some circumstances, the additional tables may not be substrate tables WT.

[0029]

[0040] The lithographic apparatus may be of a type in which at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, such as water, so as to fill a space between the projection system and the substrate. Immersion liquid may also be provided to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems. As used herein, the term "immersion" does not mean that a structure such as the substrate must be immersed in liquid, but simply that a liquid is located between the projection system and the substrate during exposure.

[0030]

[0041] The illuminator IL receives a radiation beam from a radiation source SO. The source SO and lithographic apparatus 100 may be separate physical entities, for example if the source SO is an excimer laser. In such cases, the source SO is not considered to form part of lithographic apparatus 100, and the radiation beam B is passed from the source SO to the illuminator IL using a beam delivery system BD (not shown), which may include, for example, suitable directing mirrors and / or beam expanders. In other cases, the source SO may be an integral part of lithographic apparatus 100, for example if the source SO is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.

[0031]

[0042] The illuminator IL can be used to adjust the radiation beam B so that it has a desired uniformity and intensity distribution in its cross-section. The desired uniformity of the radiation beam B can be maintained using a uniformity compensator. The uniformity compensator comprises a number of protrusions (e.g. fingers) that can be adjusted in the path of the radiation beam B to control the uniformity of the radiation beam B. A sensor can be used to monitor the uniformity of the radiation beam B.

[0032]

[0043] The radiation beam B is incident on a patterning device (e.g., mask) MA, which is held on a support structure (e.g., mask table) MT, and is patterned by the patterning device MA. In lithographic apparatus 100, the radiation beam B is reflected from the patterning device (e.g., mask) MA. After reflecting from the patterning device (e.g., mask) MA, the radiation beam B passes through a projection system PS, which focuses the radiation beam B onto a target portion C of a substrate W. The substrate table WT can be moved accurately (e.g., to position different target portions C in the path of the radiation beam B) using a second positioner PW and a position sensor IF2 (e.g., an interferometric device, a linear encoder, or a capacitive sensor). Similarly, the patterning device (e.g., mask) MA can be accurately positioned with respect to the path of the radiation beam B using a first positioner PM and another position sensor IF1. The patterning device (e.g., mask) MA and substrate W can be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.

[0033]

[0044] Lithographic apparatus 100 can be used in at least one of the following modes:

[0034]

[0045] 1. In step mode, the support structure (e.g. mask table) MT and substrate table WT are kept essentially stationary, while the entire pattern imparted to the radiation beam B is projected onto a target portion C in one go (i.e. a single static exposure), and the substrate table WT is then moved in the X and / or Y direction so that a different target portion C can be exposed.

[0035]

[0046] 2. In scan mode, the support structure (e.g. mask table) MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam B is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure (e.g. mask table) MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS.

[0036]

[0047] 3. In another mode, the support structure (e.g. mask table) MT holds the programmable patterning device and keeps it substantially stationary, while the substrate table WT is moved or scanned while a pattern imparted to the radiation beam B is projected onto a target portion C. A pulsed radiation source SO can be used, updating the programmable patterning device as required with each movement of the substrate table WT, or between successive radiation pulses during a scan. This mode of operation is readily applicable to maskless lithography using a programmable patterning device, such as a programmable mirror array.

[0037]

[0048] Also, combinations and / or variations on the described modes of use or entirely different modes of use may be employed.

[0038]

[0049] In another embodiment, lithographic apparatus 100 includes an EUV radiation source configured to generate a beam of EUV radiation for EUV lithography. Typically, the EUV radiation source is configured in a radiation system, and a corresponding illumination system is configured to condition the EUV radiation beam of the EUV radiation source.

[0039]

[0050] 2A shows in more detail a lithographic apparatus 100 (e.g., FIG. 1) including a source collector apparatus SO, an illumination system IL, and a projection system PS, according to some embodiments. The source collector apparatus SO is constructed and arranged such that a vacuum environment can be maintained within an enclosure 220 of the source collector apparatus SO. The EUV radiation-emitting plasma 210 can be formed by a discharge-produced plasma source. In some embodiments, an excited (e.g., laser-excited) plasma of tin (Sn) is provided to generate the EUV radiation.

[0040]

[0051] Radiation emitted by the EUV radiation-emitting plasma 210 is delivered from the source chamber 211 into the collector chamber 212 through an optional gas barrier or contaminant trap 230 (sometimes also referred to as a contaminant barrier or foil trap) positioned in or behind an opening in the source chamber 211. The contaminant trap 230 may include a channel structure. The contaminant trap 230 may also include a gas barrier or a combination of a gas barrier and a channel structure. The contaminant trap or contaminant barrier 230 further illustrated herein includes at least a channel structure.

[0041]

[0052] The collector chamber 212 may include a radiation collector CO, which may be a so-called grazing incidence collector. The radiation collector CO has an upstream radiation collector side 251 and a downstream radiation collector side 252. Radiation traversing the collector CO may be reflected off a grating spectral filter 240 and focused into a virtual source point INTF. The virtual source point INTF is commonly called the intermediate focus, and the source collector arrangement is positioned such that the intermediate focus INTF is located at or near the opening 219 of the enclosure structure 220. The virtual source point INTF is an image of the EUV radiation-emitting plasma 210. The grating spectral filter 240 is used to suppress, among other things, infrared (IR) radiation.

[0042]

[0053] The radiation then traverses an illumination system IL, which may include a faceted field mirror device 222 and a faceted pupil mirror device 224 arranged to provide a desired angular distribution of the radiation beam 221 at the patterning device MA, and to provide a desired radiation intensity uniformity at the patterning device MA. When the radiation beam 221 is reflected from the patterning device MA, which is held by the support structure MT, a patterned beam 226 is formed, which is imaged by the projection system PS via reflective elements 228, 229 onto a substrate W held by a wafer stage or substrate table WT. This is by way of example only, and other illumination systems may utilise a variety of other different mirrors and optical devices to direct the radiation beam 221 to the patterning device MA.

[0043]

[0054] In general, there may be more elements in the illumination optics unit IL and the projection system PS than are shown. A grating spectral filter 240 may optionally be present, depending on the type of lithographic apparatus. Furthermore, there may be more mirrors than are shown in Figure 2A. For example, there may be one to six additional reflective elements in the projection system PS compared to what is shown in Figure 2A.

[0044]

[0055] In some embodiments, the illumination optics unit IL may include a sensor ES providing measurements of one or more of, for example, energy per pulse, photon energy, intensity, average power, etc. The illumination optics unit IL may include a measurement sensor MS for measuring the displacement of the radiation beam B, and a uniformity compensator UC for enabling the illumination slit uniformity to be controlled. The measurement sensor MS may also be located at other positions, for example the measurement sensor MS may be located on or close to the substrate table WT.

[0045]

[0056] 2A is shown as merely one example of a collector (or collector mirror) and is depicted as a nested collector with grazing incidence reflectors 253, 254, and 255. Grazing incidence reflectors 253, 254, and 255 are arranged axially symmetrically about optical axis O, and this type of collector optic CO is suitable for use in combination with a discharge-produced plasma source, often referred to as a DPP source.

[0046]

[0057] FIG. 2B illustrates selected portions of lithographic apparatus 100 (e.g., FIG. 1 ), including alternative collection optics within source collector apparatus SO, according to some embodiments. It will be appreciated that structures shown in FIG. 2A but not shown in FIG. 2B (for clarity) may still be included in embodiments referring to FIG. 2B . Elements in FIG. 2B having the same reference numbers as those in FIG. 2A have the same or substantially similar structure and function as those described with reference to FIG. 2A . In some embodiments, lithographic apparatus 100 can be used to expose a substrate W, such as a resist-coated wafer, with a patterned beam of EUV light. In FIG. 2B , illumination system IL and projection system PS are combined and represented as exposure device 256 (e.g., an integrated circuit lithography tool such as a stepper, scanner, step-and-scan system, direct-write system, or device using a contact mask and / or proximity mask) that uses EUV light from source collector apparatus SO. Lithographic apparatus 100 may also include collector optics 258 that reflect EUV light from EUV radiation emitting plasma 210 along a path into exposure device 256 for irradiating substrate W. Collector optics 258 includes a near-normal incidence collector mirror having a reflective surface in the form of a prolate spheroid (i.e., an ellipse rotated about its major axis) with a graded multi-layer coating including, for example, alternating layers of molybdenum and silicon, and possibly including one or more high-temperature diffusion barrier layers, smoothing layers, capping layers, and / or etch stop layers.

[0047]

[0058] FIG. 3 shows a detailed diagram of a portion of lithographic apparatus 100 (e.g., FIGS. 1, 2A, and 2B) according to one or more embodiments. Elements in FIG. 3 having the same reference numbers as those in FIGS. 1, 2A, and 2B have the same or substantially similar structure and function as those described with reference to FIGS. 1, 2A, and 2B. In some embodiments, lithographic apparatus 100 can include a source collector apparatus SO having an LPP EUV light emitter. As shown, source collector apparatus SO can include a laser system 302 for generating a train of light pulses and delivering the light pulses into light source chamber 212. In lithographic apparatus 100, the light pulses can travel along one or more beam paths from laser system 302 into chamber 212 to illuminate source material at irradiation region 304 and generate a plasma (e.g., the plasma region where high-temperature plasma 210 exists in FIG. 2B) that produces EUV light for substrate exposure in exposure device 256.

[0048]

[0059] In some embodiments, a laser suitable for use in laser system 302 may include a pulsed laser device, such as a pulsed gas discharge CO2 laser device that generates 9.3 pm or 10.6 pm radiation via DC or RF excitation and operates at relatively high powers, e.g., 10 kW or greater, and at high pulse repetition rates, e.g., 50 kHz or greater. In some embodiments, the laser may be an axially RF-excited CO2 laser with an oscillator-amplifier configuration with multistage amplification (e.g., a master oscillator / power amplifier (MOPA) or a power oscillator / power amplifier (POPA)), with a seed pulse initiated by a relatively low-energy, high-repetition-rate Q-switched oscillator capable of operation at, e.g., 100 kHz. The laser pulses from the oscillator may then be amplified, shaped, and / or focused before reaching irradiation region 304. A continuously pumped CO2 amplifier may be used for laser system 302. Alternatively, the laser may be configured as a so-called "self-targeting" laser system, in which a droplet serves as one mirror of the laser's optical cavity.

[0049]

[0060] In some embodiments, depending on the application, other types of lasers may also be suitable, such as excimer or molecular fluorine lasers operating at high power and high pulse repetition rates. Some examples include solid-state lasers with fiber-, rod-, slab-, or disk-type active media, other laser architectures with one or more chambers, such as an oscillator chamber and one or more amplifier chambers (parallel or serial amplifier chambers), master oscillator / power oscillator (MOPO) configurations, master oscillator / power ring amplifier (MOPRA) configurations, or solid-state lasers seeding one or more excimer, molecular fluorine, or CO amplifier or oscillator chambers may be suitable. Other suitable designs are also contemplated.

[0050]

[0061] In some embodiments, the source material can be first irradiated with a pre-pulse and then with a main pulse. The pre-pulse and main pulse seeds can be generated by a single oscillator or two separate oscillators. One or more common amplifiers can be used to amplify both the pre-pulse and main pulse seeds. In some embodiments, separate amplifiers can be used to amplify the pre-pulse and main pulse seeds.

[0051]

[0062] In some embodiments, the lithographic apparatus 100 may include a beam conditioning unit 306 between the laser system 302 and the irradiation region 304, the beam conditioning unit 306 having one or more optical systems for beam conditioning, such as beam expansion, steering, and / or focusing. For example, a steering system may be provided that may include one or more mirrors, prisms, lenses, etc., and configured to direct the laser focal position to various locations within the chamber 212. For example, the steering system may include a first flat mirror and a second flat mirror, the first flat mirror mounted on a tip-tilt actuator that can move the first flat mirror independently in two dimensions, and the second flat mirror mounted on a tip-tilt actuator that can move the second flat mirror independently in two dimensions. With one or more of the described configurations, the steering system may controllably move the focal position in a direction substantially perpendicular to the beam propagation direction (beam axis or optical axis).

[0052]

[0063] The beam adjustment unit 306 may include a focusing assembly for focusing the beam onto the illumination region 304 and adjusting the focal position along the beam axis. The focusing assembly may use an optical system such as a focusing lens or mirror coupled to an actuator for movement in a direction along the beam axis to move the focal position along the beam axis.

[0053]

[0064] In some embodiments, the source collector apparatus SO may also include a source material delivery system 308. The source material delivery system 308 delivers a source material, such as, for example, tin droplets, to an irradiation region 304 within the chamber 212. In the irradiation region 304, the droplets interact with light pulses from the laser system 302 to ultimately form a plasma, which generates EUV emissions to expose a substrate, such as a resist-coated wafer, in the exposure device 256. Further details regarding various droplet dispenser configurations can be found, for example, in U.S. Patent No. 7,872,245, entitled "Systems and Methods for Target Material Delivery in a Laser Produced Plasma EUV Light Source," issued on January 18, 2011; U.S. Patent No. 7,405,416, entitled "Method and Apparatus For EUV Plasma Source Target Delivery," issued on July 29, 2008; U.S. Patent No. 7,372,056, entitled "LPP EUV Plasma Source Material Target Delivery System," issued on May 13, 2008; and International Application WO2019 / 137846, entitled "Apparatus for and Method of Controlling Coalescence of Droplets in a Droplet Stream," issued on July 18, 2019, the contents of each of which are incorporated herein by reference in their entirety.

[0054]

[0065] In some embodiments, the source material for generating EUV light output for substrate exposure may include, but is not limited to, tin, lithium, xenon, or a combination thereof. The EUV-emitting elements, such as tin, lithium, and xenon, can be in the form of liquid droplets and / or solid particles contained within the liquid droplets. For example, elemental tin can be used as pure tin, a tin compound, such as SnBr4, SnBr2, or SnH4, a tin alloy, such as a tin-gallium alloy, a tin-indium alloy, or a tin-indium-gallium alloy, or a combination thereof. Depending on the material used, the source material can be provided to the irradiation region at various temperatures, including at or near room temperature (e.g., a tin alloy such as SnBr4), at elevated temperatures (e.g., pure tin), or below room temperature (e.g., SnH4), and in some cases can be relatively volatile, such as SnBr4.

[0055]

[0066] In some embodiments, lithographic apparatus 100 may also include a controller 310, which may include a drive laser control system 312. The drive laser control system 312 controls devices in the laser system 302 to generate light pulses for delivery into chamber 212 and / or to control movement of optics in the beam conditioning unit 306. Lithographic apparatus 100 may also include a droplet position detection system, which may include, for example, one or more droplet imagers 314 that provide output signals indicative of the position of one or more droplets relative to the illumination area 304. For example, the one or more droplet imagers 314 may provide output signals indicative of the position of the droplet stream relative to the illumination area 304. The one or more droplet imagers 314 may provide this output to a droplet position detection feedback system 316. The droplet position detection feedback system 316 may, for example, calculate droplet positions and trajectories, from which a droplet error may be calculated, for example, on a droplet-by-droplet basis or as an average. The droplet error is then provided as an input to controller 310, which can provide, for example, position, direction, and / or timing correction signals to laser system 302 to control laser trigger timing and / or control movement of optics in beam conditioning unit 306, thereby, for example, modifying the position and / or focal power of the light pulses delivered to irradiation region 304 in chamber 212. In source collector apparatus SO, source material delivery system 308 can also include a control system that is operable in response to signals from controller 310 (which, in some implementations, may include the droplet error described above or some quantity derived therefrom) to, for example, modify the release point, initial droplet stream direction, droplet release timing, and / or droplet modulation to correct for the error in droplets reaching irradiation region 304.

[0056]

[0067] In some embodiments, the lithographic apparatus 100 may also include a collector optics 258 and a gas dispenser device 320. The gas dispenser device 320 may provide gas from the source material delivery system 308 to a path of the source material (e.g., the irradiation region 304). The gas dispenser device 320 may include a nozzle through which the provided gas can be emitted. When positioned near the optical path of the laser system 302, the gas dispenser device 320 may be constructed (e.g., have an opening) so that light from the laser system 302 can reach the irradiation region 304 without being blocked by the gas dispenser device 320. A buffer gas, such as hydrogen, helium, argon, or a combination thereof, may be introduced, replenished, and / or removed from the chamber 212. The buffer gas may be present in the chamber 212 during plasma discharge and may act to slow down plasma-generating ions, reduce degradation of the optics, and / or increase plasma efficiency. Alternatively, magnetic and / or electric fields (not shown) can be used alone or in combination with a buffer gas to mitigate fast ion damage. The gas can be present (diluted) in a partial vacuum.

[0057]

[0068] In some embodiments, lithographic apparatus 100 may also include collector optics 258. Collector optics 258 may be, for example, a near-normal incidence collector mirror having a reflective surface in the form of a prolate spheroid (i.e., an ellipse rotated about its major axis), with graded multi-layer coating layers including, for example, alternating layers of molybdenum and silicon, and possibly one or more high-temperature diffusion barrier layers, smoothing layers, capping layers, and / or etch-stop layers. Collector optics 258 may be formed with an aperture to allow light pulses generated by laser system 302 to pass through and reach illumination region 304. This or a similar aperture may be used to allow gas from gas dispenser device 320 to flow into chamber 212. As shown, collector optics 258 may be, for example, a prolate spheroid mirror having a first focus in or near illumination region 304 and a second focus in a so-called intermediate region 318. At the intermediate region 318, the EUV light can exit the source collector arrangement SO and enter an exposure device 256 that uses EUV light, such as an integrated circuit lithography tool. It will be appreciated that other optics may be used instead of a prolate spheroidal mirror to collect and direct the light to the intermediate location for subsequent delivery to a device that uses EUV light. Also contemplated are embodiments that use collector optics CO (FIG. 2A) with the structure and functionality described with reference to FIG. 3.

[0058]

[0069] Exemplary Lithography Cell

[0070] FIG. 4 illustrates a lithography cell 400, sometimes referred to as a lithocell or cluster, according to some embodiments. Lithography apparatus 100 may form part of the lithography cell 400. The lithography cell 400 may also include one or more devices that perform pre-exposure and post-exposure processes on a substrate. Conventionally, these may include a spin coater SC that deposits a resist layer, a developer DE that develops exposed resist, a chill plate CH, and a bake plate BK. A substrate handler or robot RO retrieves substrates from input / output ports I / O1, I / O2, moves them between various process tools, and then delivers them to a loading bay LB of lithography apparatus 100. These devices, often collectively referred to as a track, are under the control of a track control unit TCU, which is itself controlled by a supervisory control system SCS. The SCS also controls the lithography apparatus via a lithography control unit LACU. Thus, these various tools can be operated to maximize throughput and processing efficiency.

[0059]

[0071] Exemplary Plasma Material Droplet Source

[0072] 5 illustrates a source material delivery system 500 according to some embodiments. In some embodiments, the source material delivery system 500 can be used in the lithographic apparatus 100 (e.g., as the source material delivery system 308 of FIG. 3). The source material delivery system 500 can include a nozzle 502, an electromechanical element 504, and a waveform generator 506. The nozzle 502 can include a capillary tube 508. The source material delivery system 500 can further include a shroud 510, a controller 512, a detector 514, and / or a detector 516.

[0060]

[0073] As used herein, terms such as "electromechanical," "electrically actuatable," and the like can refer to a material or structure that undergoes a dimensional change (e.g., movement, deflection, contraction, etc.) when subjected to an electrical voltage, an electric field, a magnetic field, or a combination thereof, including, but not limited to, piezoelectric materials, electrostrictive materials, and magnetostrictive materials. Apparatus and methods for controlling droplet streams using electrically actuatable elements are disclosed, for example, in U.S. Published Application No. 2009 / 0014668, entitled "Laser Produced Plasma EUV Light Source Having a Droplet Stream Produced Using a Modulated Disturbance Wave," published January 15, 2009, and U.S. Patent No. 8,513,629, entitled "Droplet Generator with Actuator Induced Nozzle Cleaning," published August 20, 2013, both of which are incorporated herein by reference in their entireties.

[0061]

[0074] In some embodiments, the electromechanical element 504 may be disposed on (e.g., surrounding) the nozzle 502. It will be appreciated that the interaction between the nozzle 502 and the electromechanical element 504 described herein may refer to the interaction between a pressure-sensitive element of the nozzle 502 and the electromechanical element 504 (e.g., the electromechanical element 504 is disposed on the capillary tube 508). The waveform generator 506 may be electrically coupled to the electromechanical element 504. The controller 512 may be electrically coupled to the waveform generator 506.

[0062]

[0075] In some embodiments, an EUV-generating plasma can be generated by irradiating a target material (e.g., Sn) with a laser, ionizing the target material. The target material can be provided as a stream of coalesced droplets that intersect the laser path. The source material delivery systems 500 and 300 (FIG. 3) may also be referred to as droplet generator apparatuses, droplet generating devices, or the like.

[0063]

[0076] In some embodiments, nozzle 502 can eject initial target material droplets, shown in FIG. 5 as target material stream 518. Electromechanical element 504 and waveform generator 506 can manipulate the flow dynamics to convert target material stream 518 into coalesced droplets 522. The coalesced droplets 522 can be detected by detectors 514 and / or 516 to generate a signal (e.g., a detection signal). As used herein, terms like "detect" can refer to capturing an image of a droplet (e.g., with a camera) and / or providing a binary indication of the presence or absence of a droplet, or when a droplet crosses a given location (e.g., with a laser curtain). Detectors 514 and 516 can be trigger detectors, gating detectors, gate detectors, or other suitable detectors that generate a detection signal in response to meeting one or more conditions, such as detecting the presence of a droplet. Detectors 514 and 516 can detect the direction and position of the merged droplet stream 522 relative to a desired target area, such as illumination area 304 in FIG. 3 . One of detectors 514 and 516 can be an image capture device, and the other can be a gating detector. Controller 512 can determine characteristics of target material stream 518 based on the signal from detector 514. The characteristics of target material stream 518 can include, for example, the velocity profile of the droplet stream at the detection point, gaps (time and / or distance) between droplets, the presence of uncoalesced droplets (satellite droplets, or simply “satellites”), droplet size, coalescence length, droplet path (or target), etc. Controller 512 can use information from detectors 514 and / or 516 to generate feedback signals, for example, to control the operation and / or adjustment of gating waveform generator 506 or to adjust the target of nozzle 502 to more accurately direct the droplet path.

[0064]

[0077] Achieving this interaction between the coalesced droplets 522 and the laser is desirable because it is this interaction that ionizes the coalesced droplets 522 and creates the plasma that generates EUV radiation. In some embodiments, variations in the droplet-laser interaction can affect the efficiency and stability of EUV radiation. Instabilities can adversely affect lithography processes using EUV radiation. Therefore, it is desirable to create and control the droplet-laser interaction so that EUV generation is stable (e.g., reducing intensity fluctuations). In some embodiments, stable EUV generation may depend on achieving coalesced droplets 522 with uniform and consistent characteristics over extended periods of operation. An in-flight coalescence mechanism requires that the source material delivery system 500 be located some distance away from the irradiation region 304 ( FIG. 3 ). Consistent droplet coalescence can be achieved by positioning the source material delivery system 308 (or its nozzle) some distance away from the irradiation region 304 ( FIG. 3 ), for example, at a distance of 700 mm or more from the primary focal point. As used herein, the term "primary focal point" may refer to the optimal region (e.g., within irradiation region 304 (FIG. 3)) where radiation from laser system 302 (FIG. 3) can optimally intersect with coalesced droplets 522 to produce highly stable and efficient EUV radiation.

[0065]

[0078] The structures and features of the disclosed embodiments can reduce uncertainty in the aiming of the droplet stream. To provide additional context for droplet stream alignment embodiments, it is beneficial to describe the tolerances of the nozzle configuration.

[0066]

[0079] In some embodiments, when the source material delivery system 500 is installed in a lithography apparatus, rigorous alignment procedures can be performed to direct the droplet stream in a precise direction toward the primary focal point. As an example, measurements of the structure of the capillary tube 508 can be performed to estimate the expected droplet stream direction. While a steering system may be provided for the nozzle, the adjustment range of the nozzle steering system may be severely constrained by the overall design of the EUV illumination system. Therefore, it is desirable to aim the nozzle as optimally as possible during installation to minimize the need for additional steering adjustments.

[0067]

[0080] In some embodiments, a coordinate measuring machine (CMM) can be used to perform structural measurements of the capillary 508. The CMM can include a microscope and a probe that contacts multiple points on the capillary 508 to obtain coordinate measurements. Based on the measurements, the CMM can determine a given location and a given pointing direction of the capillary 508. In other words, the CMM can estimate the pointing direction of the capillary 508.

[0068]

[0081] In some embodiments, the nozzle may have inherent geometric features that cause an unknown spread in the droplet position (e.g., directional uncertainty). This is represented in FIG. 5 as directional uncertainty 524. Even if the CMM measurements are accurate, the internal features of the capillary 508 have uncertainty based on tolerances inherent in the manufacturing process. For example, a best-case scenario for directional uncertainty 524 is a variation of approximately ±1.3 degrees. It should be noted that while the capillary 508 may be constructed from glass, this is provided as a non-limiting example and other suitable capillary materials may also be used.

[0069]

[0082] In some embodiments, droplet path stability may be stable over time (e.g., minimal fluctuations during operation), but directional uncertainty 524 may arise when a source material delivery system 500 is newly installed in an EUV illumination system. This is because CMM measurements are performed ex-situ due to practical limitations in implementing a CMM within the illumination system. When the source material delivery system 500 is first installed in an EUV illumination system, the droplet stream path may be misdirected by an amount that exceeds the correction capabilities of the steering system described above. This situation may result in a costly and complex rebuild of the illumination system or replacement of the source material delivery system 500, which may not guarantee a resolution to the target problem.

[0070]

[0083] In some embodiments, there may be uncertainty in the material and design of the capillary 508. Even if a redesign changes the nozzle configuration, the new design may have even greater uncertainty (e.g., a directional uncertainty of ±2.0 degrees 524). Furthermore, if the uncertainty is too large, droplets may contact auxiliary devices near the droplet flow path, resulting in contamination of the impacted devices.

[0071]

[0084] The structures and functions in the embodiments of the present disclosure can address at least the above-mentioned problems related to directional uncertainty 524.

[0072]

[0085] Exemplary Droplet Generator Alignment Mechanism

[0086] FIG. 6 shows a cross-sectional view of a droplet generator apparatus 600 according to some embodiments. In some embodiments, the droplet generator apparatus 600 can be used as the source material delivery system 308 (FIG. 3) and 500 (FIG. 5). The droplet generator apparatus 600 can include a nozzle 602, an aperture structure 616, and an alignment mechanism. The alignment mechanism can be provided as separate parts, such as parts 604 and 606 (e.g., a "first part of the alignment mechanism" and a "second part of the alignment mechanism"). In some embodiments, enumerated adjectives (e.g., "first," "second," "third," etc.) can be used as a naming convention and are not intended to indicate an order or hierarchy (unless otherwise indicated). For example, the terms "first part" and "second part" can distinguish two parts, but need not dictate whether these sections have a particular order or hierarchy. Furthermore, elements in the figures are not limited to any particular enumerated adjectives. For example, portion 604 may be referred to as a second section, and one or more other portions may be given one or more other distinguishing enumerated adjectives.

[0073]

[0087] In some embodiments, droplet generator device 600 can be mounted (e.g., via a vacuum flange or other interface) to an illumination system that includes a chamber wall 601. The gas within the chamber can be (e.g., partially) evacuated to achieve the rarefied environment already described above with reference to FIG. 3. The environment within the chamber (e.g., the left side of FIG. 6) where droplets are generated may be referred to as vacuum side 603. The environment outside the chamber (e.g., the right side) may be referred to as atmosphere side 605. Thus, droplet generator device 600 may include an exterior surface 608.

[0074]

[0088] In some embodiments, alignment mechanism portion 604 may include a corresponding adjustment mechanism 610 (e.g., a "first adjustment mechanism"). Alignment mechanism portion 606 may include a corresponding adjustment mechanism 612 (e.g., a "second adjustment mechanism"). Alignment mechanism portion 606 may be disposed on atmosphere side 605 and coupled to an exterior surface 608 of the droplet generator device. The droplet generator device may further include a pedestal 620.

[0075]

[0089] In some embodiments, the adjustment mechanism 610 can include a spherical bearing to provide a pivot for the pedestal 620 and the nozzle 602. The spherical plain bearing allows for angular rotation in multiple directions around a central pivot. The pedestal 620 can support the nozzle 602. The pedestal 620 is rigidly attached to both the adjustment mechanism 610 and the nozzle 602, allowing for adjustment (e.g., change in direction) of the nozzle 602 around the adjustment mechanism 610. The tip of the nozzle 602 (or the tip of the capillary tube 508 (FIG. 5)) can be positioned at the center of rotation of the adjustment mechanism 610. Droplets from the nozzle 602 can proceed in a droplet stream substantially along a droplet path 614. An operator can adjust the orientation or position of the nozzle 602 by using the adjustment mechanism 612 on the atmosphere side 605. Using the adjustment mechanism, the position of the nozzle 602 can be adjusted to align the droplet path 614 with respect to a target area, such as the irradiation area 304. The vacuum-air interface of droplet generator device 600 includes a travel budget that allows a range of motion for adjustment mechanism 612 while maintaining a vacuum seal.

[0076]

[0090] The adjustment mechanism 612 may include a base 630 rigidly coupled to the nozzle 602. An operator can adjust the orientation of the nozzle 602 and the droplet path 614 by adjusting the base 630. In this manner, the adjustment mechanism 612 can adjust the adjustment mechanism 610, for example, by rotating a spherical bearing of the adjustment mechanism 610, to align the nozzle 602 and the droplet path 614, i.e., the direction of the droplet stream. The aperture structure 616 may include a shielding structure having an aperture. The shielding structure can provide shielding when droplets travel substantially outside the path of the droplet path 614, for example, when the droplet generator device 600 is operating at an upward or downward speed. The aperture structure 616 may be located at the distal end of the nozzle alignment mechanism. The droplets may include heated tin, which is highly corrosive. Tin contamination can adversely affect the performance of an EUV source implementing the droplet generator device 600. Furthermore, tin contamination can affect internal components of the droplet generator device 600. Therefore, the alignment mechanism is fabricated from a corrosion-resistant material (eg, stainless steel with a coating of titanium nitride).

[0077]

[0091] In some embodiments, the adjustment mechanism 612 may also include a mounting plate 632 that supports additional elements for adjustment.

[0078]

[0092] Figure 7 is a perspective view of a droplet generator apparatus 700 according to some embodiments. In some embodiments, droplet generator apparatus 700 may be a different view than droplet generator apparatus 600 (Figure 6). Unless otherwise indicated, the structures and functions described above for elements in Figure 6 also apply to similarly numbered elements in Figure 7 (e.g., reference numbers having the same two digits on the right). At least some of the structures and functions in Figure 7 should be apparent from the description of the corresponding elements in Figure 6.

[0079]

[0093] In some embodiments, Figure 7 illustrates a frame 707, pedestal 720, adjustment mechanisms 710 and 712, an opening structure 716 located at the end of the pedestal 720, a clamp 718, a base 730, and a mounting plate 732 of a droplet generator apparatus 700. The clamp 718 can be used to rigidly attach the nozzle 602 (Figure 6) to the pedestal 720. The pedestal 720 and opening structure 716 are free to move relative to the frame 707 when performing alignment adjustments. The exterior of the adjustment mechanism 712 is shown in Figure 7. Certain portions of the adjustment mechanism 712 illustrated here can be used to lock the alignment once adjustment of the nozzle 602 (Figure 6) is complete (as further described below with reference to Figures 10-12).

[0080]

[0094] FIG. 8 shows an expanded view of adjustment mechanism 810 according to some embodiments. In some embodiments, adjustment mechanism 810 may be a different view than adjustment mechanisms 610 and / or 710 (FIGS. 6 and 7). Unless otherwise indicated, the structures and functions described above for elements in FIGS. 6 and 7 also apply to similarly numbered elements in FIG. 8 (e.g., reference numbers having the same two digits on the right). At least some of the structures and functions in FIG. 8 should be apparent from the description of the corresponding elements in FIGS. 6 and 7.

[0081]

[0095] In some embodiments, FIG. 8 shows the opening structure 816, one or more clamps 818, a cradle 820, and a spherical bearing 822 of the adjustment mechanism 810. The spherical bearing 822 can include a spring 824, a recessed structure 826, and a spherical structure 828. The spherical structure 828 can include a hollow sphere. Two opposing end caps of the hollow sphere have been removed to provide access through the spherical structure 828. In other words, the spherical structure 828 can have an annular or ring-like structure with a spherical exterior (as opposed to a straight cylinder). The assembly supporting the opening structure 816 is rigidly attached to the spherical structure 828 or the cradle 820, so that the opening structure 816 can move with the droplet path 614 (FIG. 6) when the nozzle 602 (FIG. 6) is adjusted. The spring 824 is used to secure the spherical structure 828 in the recessed structure 826 while allowing the spherical structure 828 to rotate into place. The spherical structure 828 can rotate based on adjustment of the first adjustment mechanism 610 (FIG. 6) by the adjustment mechanism 612 (FIG. 6).

[0082]

[0096] 9A shows a cross-sectional view of spherical bearing 922 according to some embodiments. In some embodiments, spherical bearing 922 may be in a different view than spherical bearing 822 (FIG. 8) (e.g., a view in which the droplet generator is pointing out of the plane of the page). Unless otherwise indicated, the structures and functions described above for elements in FIG. 8 also apply to similarly numbered elements in FIG. 9 (e.g., reference numbers with the same two digits on the right). At least some structures and functions in FIG. 9 should be apparent from the description of the corresponding elements in FIG. 8.

[0083]

[0097] In some embodiments, the spherical structure 928 can be supported by a recessed structure 926. The recessed structure 926 can be a groove (e.g., a V-groove). The spring 924 can be a leaf spring. The spring 924 can bias the spherical structure 928 toward the recessed structure 926 with enough force to prevent the spherical structure 928 from uncoupling, but with a small enough force to allow rotation of the spherical structure 928. The recessed structure 926 can be attached to a frame of a droplet generator device (e.g., 600 or 700 (FIGS. 6 and 7)), while the spherical structure 928 can rotate relative to it. The range of rotation possible is, for example, about ±2.0 degrees. The spherical structure 928 is hollow and open at two opposite ends to provide openings 929 for line-of-sight access to the droplet path 614 (FIG. 6).

[0084]

[0098] 9B and 9C show different cross-sectional views of spherical bearing 922 according to some embodiments. In this view, the spherical shape of spherical structure 928 is more apparent. Spherical structure 828 (FIG. 8) may be identical to spherical structure 928. FIG. 9B shows spherical structure 928 in a nominal position (e.g., unrotated). FIG. 9C shows spherical structure 928 in an adjusted position (e.g., after rotation). While the illustrated adjustment is up and down the page, it will be appreciated that adjustment may also include rotation perpendicular to the page and / or translation left and right along recessed structure 926.

[0085]

[0099] FIG. 10 shows a close-up view of adjustment mechanism 1012 according to some embodiments. In some embodiments, adjustment mechanism 1012 may be a different view than adjustment mechanisms 612 and / or 712 (FIGS. 6 and 7). Unless otherwise indicated, the structures and functions described above for elements in FIGS. 6 and 7 also apply to similarly numbered elements in FIG. 10 (e.g., reference numbers having the same two digits on the right). At least some of the structures and functions of FIG. 10 should be apparent from the description of the corresponding elements in FIGS. 6 and 7.

[0086]

[0100] In some embodiments, the adjustment mechanism 1012 may include a combination of adjustment and locking elements. In particular, the mechanism highlighted in FIG. 10 may belong to the locking category (e.g., prevents relative movement once locked). The locking elements may be located closer to the interior of the droplet generator device 600 (FIG. 6) than the actuation elements (e.g., located near the nozzle, on the left side of FIG. 6). Actuation elements are further described below with reference to FIG. 11.

[0087]

[0101] In some embodiments, adjustment mechanism 1012 can include a base 1030, a mounting plate 1032, and a locking device 1036. Base 1030 can be rigidly attached to nozzle 602 (FIG. 6). Mounting plate 1032 can be attached to frame 1007 (e.g., the frame of droplet generator 600 (FIG. 6)).

[0088]

[0102] In some embodiments, when the adjustment mechanism 1012 is in an unlocked state, the base 1030 can move relative to the mounting plate 1032, which remains stationary. In the unlocked state, the separation between the base 1030 and the mounting plate 1032 can be, for example, about 0.5 mm or more, 1.0 mm or more, 2.0 mm or more, etc. Because of this small separation, it is desirable for the interface between the base 1030 and the mounting plate 1032 to have a matching shape (e.g., an overlapping shape) to allow the base 1030 to move relative to the mounting plate 1032 despite being in close proximity to one another. Thus, in some embodiments, the interface between the base 1030 and the mounting plate 1032 can be a hemispherical interface with a radial center located on the pivot axis defined by the adjustment mechanism 610 ( FIG. 6 ).

[0089]

[0103] In some embodiments, the mounting plate 1032 can include an opening 1033. The opening 1033 allows an adjustment member access to the base 1030 for adjustment.

[0090]

[0104] In some embodiments, the locking device 1036 can be engaged (e.g., tightened) to place the adjustment mechanism 1012 in a locked state. In the locked state, the mounting plate 1032 is positioned on (e.g., in contact with) the base 1030, frictionally preventing movement relative to one another. In the unlocked state, the mounting plate 1032 remains stationary while the base 1030 can move relative to the mounting plate 1032. Because the base 1030 is directly coupled to the droplet generator, adjustment of the base 1030 (as part of the adjustment mechanism 612) causes a proportional actuation of the nozzle 620, which in turn causes a proportional rotation of the adjustment mechanism 610.

[0091]

[0105] FIG. 11 illustrates an adjustment mechanism 1112 according to some embodiments. In some embodiments, adjustment mechanism 1112 may be a different view than adjustment mechanisms 612, 712, and / or 1012 ( FIGS. 6 , 7 , and 10 ) and shows additional components. Unless otherwise indicated, the structures and functions described above for elements in FIGS. 6 , 7 , and 10 also apply to similarly numbered elements in FIG. 11 (e.g., reference numbers having the same two digits on the right). At least some of the structures and functions of FIG. 11 should be apparent from the description of the corresponding elements in FIGS. 6 , 7 , and 10 .

[0092]

[0106] In some embodiments, adjustment mechanism 1112 can include a combination of adjustment and locking elements. In particular, the mechanisms highlighted in Figure 11 may fall into the adjustment category (e.g., adjust the direction of droplet path 614 (Figure 6)), although some locking elements (e.g., locking device 1136) can be illustrated for context. The adjustment elements can be located further from the interior of droplet generator apparatus 600 (Figure 6) than the locking elements.

[0093]

[0107] In some embodiments, the adjustment mechanism 1112 can include a mounting structure 1131, a pad 1134, an intermediate structure 1135, fasteners 1137 and 1139, and an adjustment member 1138. The intermediate structure 1135 can be a standoff (e.g., a threaded separator). The fasteners 1137 and 1139 can be threaded fasteners (e.g., bolts). The fastener 1137 can attach the intermediate structure 1135 to the base 1030 ( FIG. 10 ) through an opening 1033 ( FIG. 10 ) (and also through openings in the mounting structure 1131 and pad 1134, not shown). The adjustment member 1138 can be a set screw contacting the intermediate structure 1135. The adjustment member 1138 can be rotated to move the intermediate structure 1135 up, down, left, or right (with respect to the plane of the page). Moving intermediate structure 1135 moves base 1030 (FIG. 10), which in turn allows the orientation of nozzle 602 and droplet path 614 (FIG. 6) to be adjusted. For example, using adjustment member 1138, adjustment mechanism 1112 (along with adjustment mechanism 610 in FIG. 6) can adjust the position of nozzle 602 (FIG. 6) within a range of approximately 0.01 degrees to 1.75 degrees. Adjustments can be made in two dimensions, i.e., along two axes, relative to the fixed horizontal and vertical planes of the nozzle alignment mechanism. In other words, adjustment of intermediate structure 1135 of portion 606 (FIG. 6) causes a proportional adjustment of portion 604 (FIG. 6).

[0094]

[0108] In some embodiments, the mounting structure 1131 can be rigidly coupled to the mounting plate 1032 (FIG. 2) (i.e., stationary relative to the frame 1007 (FIG. 10)). The pads 1134 can be attached to the mounting structure 1131 using fasteners 1139. In other words, the pads 1134 can be rigidly attached to the mounting plate 1032 and the frame 1007 (FIG. 10).

[0095]

[0109] In some embodiments, adjustments can be made when the adjustment mechanism 1112 is in an unlocked state. To lock the adjustment mechanism 1112 after adjustment, the locking devices 1136 can be engaged (e.g., tightened bolts). The mounting structure 1131 and pad 1134 can have openings for each of the locking devices 1136 to allow access to the locking devices 1136.

[0096]

[0110] In some embodiments, the pad 1134 and the intermediate structure 1135 may be in contact or separated depending on the locked / unlocked state of the adjustment mechanism 1112 (described in more detail below with reference to FIG. 12). To allow the intermediate structure 1135 to move relative to the pad 1134 while in contact, the interface between the pad 1134 and the intermediate structure 1135 may be a spherical interface with a radial center located on the pivot axis defined by the adjustment mechanism 610 (FIG. 6).

[0097]

[0111] FIGS. 12A and 12B show adjustment mechanisms 1210 and 1212 according to some embodiments. The right-hand portions of FIGS. 12A and 12B show a cross-section of the mechanism of FIG. 11, which can be understood to be disposed on a mounting plate (632, 732, or 1032 in FIGS. 6, 7, or 10). In some embodiments, elements in FIGS. 12A and 12B can correspond to elements in FIGS. 6 through 11. In particular, adjustment mechanism 1210 corresponds to the leftmost portion of adjustment mechanism 610 shown in FIG. 6. Unless otherwise indicated, the structure and function described above for elements in FIGS. 6 through 11 also apply to similarly numbered elements in FIGS. 12A and 12B (e.g., reference numbers having the same two digits on the right). At least some of the structure and function of FIGS. 12A and 12B should be apparent from the description of the corresponding elements in FIGS. 6 through 11.

[0098]

[0112] In some embodiments, Figure 12A may correspond to a locked state. The adjustment mechanism 1210 includes a recessed structure 1226 and a spherical structure 1228 supported within the recessed structure. A capillary tip 1240 (e.g., of nozzle 602 (Figure 6)) can be positioned approximately at the center of rotation of the spherical structure 1228. A highlighting structure 1242 is highlighted by a dotted circle. This highlighting illustrates the difference between the locked and unlocked states of the alignment mechanism. The overall context of the highlighting structure 1242 is shown compared to the highlighting structure 1242' of Figure 12B.

[0099]

[0113] In some embodiments, the adjustment mechanism 1212 includes a base 1230, a mounting plate 1232, a pad 1234, an intermediate structure 1235, a fastener 1237, and an adjustment member 1238. Interface 1244 indicates the interface between the base 1230 and the mounting plate 1232. As shown in FIG. 12A , the opposing surfaces of the base 1230 and the mounting plate 1232 overlap. In other words, the shapes of these surfaces match to form a snug fit when connected. Interface 1246 indicates the interface between the pad 1234 and the intermediate structure 1235. In a locked state, interface 1244 does not exhibit a gap, whereas interface 1246 exhibits a gap. At interface 1244, the base 1230 and the mounting plate 1232 contact each other, providing friction between them to lock them together. This contact and friction can be provided by tightening the locking device 1036 / 1136 ( FIGS. 10 and 11 ).

[0100]

[0114] In some embodiments, FIG. 12B may correspond to an unlocked state to allow adjustment. Here, the change in the mechanism is represented by highlight feature 1242′, interface 1244′, and interface 1246′. Highlight feature 1242 shows that bulbous feature 1228 has moved slightly forward (the direction is indicated by the white arrow). This forward movement is an artifact of the unlocked state of adjustment mechanism 1212 shifting certain elements forward. The forward movement may be approximately 2.0 mm or less, 1.5 mm or less, or 1.0 mm or less.

[0101]

[0115] In some embodiments, to unlock the adjustment mechanism 1212, the locking device 1036 / 1136 (FIGS. 10 and 11) can be released. This release separates the base 1030 from the mounting plate 1032 (FIG. 10), which can then pull the intermediate structure 1135 forward (direction indicated by the white arrow, with the forwardly moved structure shown in white dashed outline). Interface 1244′ indicates that a gap has formed between the base 1230 and the mounting plate 1232, thereby eliminating the friction provided for locking. Conversely, interface 1246′ indicates that the pad 1234 and the intermediate structure 1235 are now in contact. Interface 1246′ can be used as a physical stop to prevent the forward movement from completely sliding the spherical structure 1228 out of the recessed structure 1226.

[0102]

[0116] In the contacted, unlocked state, the intermediate structure 1235 can still be moved relative to the pad 1234 by adjusting the adjustment member 1238. When the intermediate structure 1235 is moved by adjusting the adjustment member 1238, this causes the spherical structure 1228 and the nozzle to rotate. To facilitate this, the interface 1246′ can be a spherical interface with the radial center of the sphere located at the capillary tip 1240. To reduce friction during contact, one of the contact surfaces can comprise a material with a low coefficient of friction (e.g., a polymer, plastic, Teflon coating, etc.). For example, the pad 1234 can be manufactured from a block of plastic. After adjustment, the locking device 1036 / 1136 (FIGS. 10 and 11) can be engaged and the setup can return to the state shown in FIG. 12A.

[0103]

[0117] It has been noted that in some embodiments, structures such as capillary tip 1240 and capillary 508 (FIG. 5) may exhibit manufacturing uncertainties until they are first used to generate a droplet stream along droplet path 614 (FIG. 6). Once the direction of droplet path 614 is observed (e.g., using a detector), the droplet generator device is no longer subject to the large uncertainty represented by uncertainty 524 (FIG. 5), and thus, momentary variations in droplet direction may be significantly reduced (e.g., achieving steady state). If the droplet stream is misaligned (i.e., not on target at the primary focus), the adjustment mechanisms disclosed herein can be used to align droplet path 614 (FIG. 6) in situ by metrology (e.g., a camera).

[0104]

[0118] FIG. 13 illustrates operations of a method 1300 for adjusting the direction of a droplet stream, according to some embodiments. In operation 1302, a nozzle may be clamped within an alignment mechanism. In operation 1304, droplets may be generated from the nozzle. In operation 1306, droplets may be delivered through the nozzle toward a target area (e.g., a primary focus). In operation 1308, a position of the droplet relative to the target area may be determined. Detectors 514 and / or 516 (FIG. 5) may be used to determine this position. Detectors 514 and / or 516 (FIG. 5) may include a CCD camera, a strobe light shadowgram device, or the like. In operation 1310, a position or orientation of the nozzle may be adjusted based on the determined droplet position. This adjustment may be performed using the structure and functionality of the alignment and adjustment mechanism described herein. In operation 1312, once it is determined that the adjustment has successfully directed the droplet toward the target area, the alignment mechanism may be locked in a fixed position.

[0105]

[0119] The method of Figure 13 can be performed in any conceivable order, and not all steps need to be performed. Furthermore, the method of Figure 13 described above merely reflects one example of operation and is not limiting. That is, other method operations are anticipated based on the embodiments described with reference to Figures 1 through 12.

[0106]

[0120] The method of Figure 13 and the figures and embodiments described above are directed to an alignment system that can be advantageously locked into an alignment position, such as in operation 1312 of Figure 13. In accordance with these embodiments, an alignment mechanism is installed on the droplet generator assembly, and the droplet generator assembly, including the components described above, is locked in place, with any fine adjustments or steering being performed using other means.

[0107]

[0121] According to other embodiments, such as those shown in Figures 14A and 14B, the components are not locked in place and the positioning mechanism described and illustrated above acts as a steering mechanism to fine-tune the position of the droplet stream emitted from a nozzle such as nozzle 602.

[0108]

[0122] FIG. 14A illustrates a steering mechanism 1412 according to some embodiments. In some embodiments, the steering mechanism 1412 may be a different view than the adjustment mechanisms 612, 712, 1012, and / or 1212 ( FIGS. 6 , 7 , 10 , and 11 ) to illustrate additional components. Unless otherwise indicated, the structure and function described above for elements in FIGS. 6 , 7 , 10 , and 11 also apply to similarly numbered elements in FIG. 14A (e.g., reference numbers having the same two digits on the right). The structure and function of at least some of the elements in FIG. 14A should be apparent from the description of the corresponding elements in FIGS. 6 , 7 , 10 , and 11 .

[0109]

[0123] In some embodiments, the steering mechanism 1412 can include a mounting structure 1431, an intermediate structure 1435, and a steering member 1438. The steering member 1438 can be motor-driven or manually adjustable.

[0110]

[0124] 14B illustrates an example of a motorized steering member 1438 according to some embodiments. In some embodiments, the steering member 1438 may be a piezoelectrically actuated steering member 1438 including a piezo actuator. Multiple steering members may control the direction of the droplet stream by actuating multiple steering members with corresponding piezo actuators. The actuation allows for fine adjustment of the droplet path (e.g., see droplet path 614 (FIG. 6)).

[0111]

[0125] In some embodiments, the droplet path steering mechanisms described herein can be characterized as part of a gimbal mechanism (e.g., a nozzle steering gimbal). The droplet path steering mechanisms described herein can eliminate or simplify cooling water circuits, eliminate or simplify gravity compensation (a limitation of Lorentz actuators), reduce footprint and volume requirements, and / or reduce material and construction costs.

[0112]

[0126] Although specific reference is made herein to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein has other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, LCDs, thin-film magnetic heads, and the like. In light of these alternative applications, those skilled in the art will recognize that when the terms "wafer" or "die" are used herein, they may be considered synonymous with the more general terms "substrate" or "target portion," respectively. The substrates described herein may be processed, before or after exposure, in, for example, a track unit (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology unit, and / or an inspection unit. Where appropriate, the disclosure herein may be applied to these and other substrate processing tools. Furthermore, a substrate may be processed multiple times, for example to produce a multi-layer IC, and thus the term substrate, as used herein, may also refer to a substrate that already includes multiple processed layers.

[0113]

[0127] Although particular reference has been made to the use of embodiments of the present disclosure in the context of optical lithography, it will be appreciated that the present disclosure may be used in other applications, such as droplet generators used in the energy industry, fuel injection, inkjets, etc.

[0114]

[0128] It is to be understood that the phraseology or terminology herein is for the purpose of description and not of limitation, and thus, the terminology or terminology of the present disclosure should be interpreted by one of ordinary skill in the art in light of the teachings herein.

[0115]

[0129] As used herein, the term "substrate" describes a material onto which a layer of material is added. In some embodiments, the substrate itself may be patterned, and the material added onto it may also be patterned or may remain unpatterned.

[0116]

[0130] While specific embodiments of the present disclosure have been described above, it will be appreciated that the present disclosure may be practiced otherwise than as described, and this description is not intended to limit the disclosure.

[0117]

[0131] It is understood that the "Description of the Invention" section, and not the "Summary" and "Abstract" sections, are intended to be used to interpret the claims. While the "Summary" and "Abstract" sections may describe one or more exemplary embodiments of the disclosure as envisioned by the inventors, they cannot describe every exemplary embodiment and therefore are not intended to limit the scope of the disclosure and the appended claims in any way.

[0118]

[0132] The present disclosure has been described above using functional components that illustrate the implementation of specific functions and relationships thereof. The boundaries of these functional components have been arbitrarily defined herein for the convenience of description. Alternative boundaries may be defined as long as the specific functions and relationships thereof are appropriately performed.

[0119]

[0133] The foregoing description of specific embodiments fully reveals the overall nature of the present disclosure, such that those skilled in the art can readily modify and / or adapt such specific embodiments for various applications without undue experimentation and without departing from the general concept of the present disclosure. Accordingly, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed embodiments, based on the teaching and guidance presented herein.

[0120]

[0134] The breadth and scope of protected subject matter should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.

[0121]

[0135] Other aspects of the invention are set forth in the following numbered clauses: 1. a first portion of an alignment mechanism coupled to the nozzle and disposed within the droplet generation device; a second portion of the alignment mechanism coupled to an outer surface of the droplet generation device; wherein the second part includes a second adjustment mechanism configured to adjust the first adjustment mechanism of the first part to adjust the position of the nozzle and align a path of the droplet stream with respect to the target area. 2. The first adjustment mechanism is a cradle configured to hold the nozzle; at least one clamp configured to attach the nozzle to the cradle; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a spring configured to bias the spherical structure toward the groove; a spherical bearing including: 2. The system of claim 1, comprising: 3. The system of clause 2, wherein the spherical structure is configured to rotate based on adjustment of the first adjustment mechanism by the second adjustment mechanism. 4. The system of clause 2, wherein the spring comprises a leaf spring. 5. The system of clause 1, wherein a first portion of the alignment mechanism is located within the vacuum environment and a second portion is located outside the vacuum environment. 6. The second adjustment mechanism is a base rigidly coupled to the nozzle; a mounting plate coupled to the frame of the system and disposed on the base; a pad rigidly coupled to the mounting plate; an intermediate structure rigidly coupled to the base and configured to be coupled to the pad; a locking device configured to lock the base to the mounting plate; 2. The system of claim 1, comprising: 7. The system of clause 6, wherein the base is movable relative to the mounting plate. 8. The system of clause 7, wherein the intermediate structure is further configured to move the base relative to the mounting plate. 9. The first adjustment mechanism is a cradle configured to hold the nozzle; at least one clamp configured to attach the nozzle to the cradle; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a spring configured to bias the spherical structure toward the groove; a spherical bearing including: 7. The system of claim 6, wherein the base of the second adjustment mechanism is configured to rotate the spherical structure of the first adjustment mechanism based on adjustment of the first adjustment mechanism by the second adjustment mechanism. 10. The system of clause 6, wherein the locking device is further configured to lock and unlock the position of the second adjustment mechanism. 11. The system of clause 1, wherein the second adjustment mechanism includes a plurality of adjustment members configured to adjust the second adjustment mechanism in orthogonal directions to adjust the position of the nozzle. 12. The system of clause 11, wherein the plurality of adjustment members includes a corresponding plurality of motor-driven piezoelectric actuators configured to actuate the plurality of adjustment members to control the direction of the droplet stream. 13. The system of clause 1, wherein the first and second adjustment mechanisms are configured to adjust the position of the nozzle within a range of approximately 0.01 degrees to 1.75 degrees relative to the plane of the alignment mechanism. 14. The system described in clause 1, wherein the first and second adjustment mechanisms are configured to adjust the position of the nozzle within a range of approximately 0.01 degrees to 1.75 degrees relative to each of the vertical plane of the alignment mechanism and the horizontal plane of the alignment mechanism. 15. The system of clause 1, further comprising a shielding structure having an opening disposed at the end of the nozzle, the droplets passing through the opening. 16. The system of clause 1, wherein the alignment mechanism is formed of a coated metal. 17. The system described in clause 1, wherein the alignment mechanism is formed of titanium nitride coated stainless steel. 18. Generating droplets from a nozzle of a droplet generating device, the nozzle being coupled to a first portion of an alignment mechanism; delivering droplets along a droplet stream toward a target area; determining a position of the droplet stream relative to the target area; adjusting, based on the determination, a position of the nozzle by interaction of a first portion of an alignment mechanism and a second portion of the alignment mechanism, the second portion being coupled to an exterior surface of the droplet generation device; A method comprising: 19. A first portion of the alignment mechanism is disposed within a vacuum environment inside the droplet generating device; 19. The method of claim 18, wherein adjusting the position of the nozzle is performed by adjusting a second portion outside the vacuum environment. 20. Adjustment is 19. The method of clause 18, comprising rotating the first, second, third, and / or fourth adjustment members of the second portion to adjust the intermediate structure of the second portion in the corresponding first, second, third, and / or fourth directions. 21. Generating droplets from a nozzle of a droplet generating device, the nozzle being coupled to a first portion of an alignment mechanism; delivering droplets along a droplet stream toward a target area; determining a position of the droplet stream relative to the target area; adjusting, based on the determination, a position of the nozzle by interaction of a first portion of an alignment mechanism and a second portion of the alignment mechanism, the second portion being coupled to an exterior surface of the droplet generation device; A method comprising: To adjust, The method includes rotating first, second, third, and / or fourth adjustment members of the second portion to adjust the intermediate structure of the second portion in corresponding first, second, third, and / or fourth directions, wherein the rotation of the first, second, third, and / or fourth adjustment members is performed using corresponding first, second, third, and / or fourth piezoelectric actuators. 22. The method of clause 20, wherein adjustment of the intermediate structure of the second part results in a proportional adjustment of the first part. 23. The method of clause 20, wherein adjustment of the intermediate structure causes a corresponding adjustment of the orientation of the nozzle within a range of about 0.01 degrees to 1.75 degrees relative to the plane of the first portion of the alignment mechanism. 24. The method of clause 18, further comprising locking the second portion of the alignment mechanism in a fixed position by tightening a locking device extending through the second portion. 25. A cradle configured to hold a nozzle; at least one clamp configured to attach the nozzle to the cradle; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a spring configured to bias the spherical structure toward the groove; a spherical bearing including: forming the first portion using 19. The method of claim 18, wherein adjusting the position of the nozzle comprises moving the second adjustment mechanism to move the first adjustment mechanism, thereby rotating the spherical structure. 26. The method of clause 18, further comprising: delivering droplets from the nozzle through the opening towards the target area. 27. A first portion of an alignment mechanism coupled to the nozzle and disposed within the droplet generation device; a second portion of the alignment mechanism coupled to an outer surface of the droplet generation device; the second portion includes a second adjustment mechanism configured to adjust the first adjustment mechanism of the first portion to adjust the position of the nozzle and align a path of the droplet stream with respect to the target area; The first adjustment mechanism is a cradle configured to hold the nozzle; at least one clamp configured to attach the nozzle to the cradle; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a leaf spring configured to bias the spherical structure toward the groove; a spherical bearing including: Including, The second adjustment mechanism is a base rigidly coupled to the nozzle; a mounting plate coupled to the frame of the system and disposed on the base; a pad rigidly coupled to the mounting plate; an intermediate structure rigidly coupled to the base and configured to be coupled to the pad; Including, The system, wherein the base is movable relative to the mounting plate, and the intermediate structure is further configured to move the base relative to the mounting plate, and the base is configured to rotate the spherical structure based on adjustment of the intermediate structure, and adjustment of the intermediate structure causes proportional adjustment of the first portion. 28. The system of clause 27, further comprising a locking device configured to lock the base to the mounting plate. 29. The system of clause 27, wherein the second adjustment mechanism includes a plurality of motor-driven piezoelectric actuator adjustment members configured to adjust the second adjustment mechanism in orthogonal directions to control the direction of the path of the droplet stream.

[0122]

[0136] The above-described embodiments and other examples are within the scope of the following claims.

Claims

1. a first portion of an alignment mechanism coupled to the nozzle and disposed within the droplet generation device; a second portion of the alignment mechanism coupled to an outer surface of the droplet generation device; wherein the second portion includes a second adjustment mechanism configured to adjust a first adjustment mechanism of the first portion to adjust a position of the nozzle and align a path of a droplet stream with respect to a target area.

2. The first adjustment mechanism includes: a cradle configured to hold the nozzle; at least one clamp configured to attach the nozzle to the pedestal; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a spring configured to bias the spherical structure toward the groove; a spherical bearing including: The system of claim 1 , comprising:

3. The system of claim 2 , wherein the spherical structure is configured to rotate based on adjustment of the first adjustment mechanism by the second adjustment mechanism.

4. The system of claim 2 , wherein the spring comprises a leaf spring.

5. The system of claim 1 , wherein the first portion of the alignment mechanism is located within a vacuum environment and the second portion is located outside the vacuum environment.

6. The second adjustment mechanism includes: a base rigidly coupled to the nozzle; a mounting plate coupled to a frame of the system and positioned on the base; a pad rigidly coupled to the mounting plate; an intermediate structure rigidly coupled to the base and configured to be coupled to the pad; a locking device configured to lock the base to the mounting plate; The system of claim 1 , comprising:

7. The system of claim 6 , wherein the base is movable relative to the mounting plate.

8. The system of claim 7 , wherein the intermediate structure is further configured to move the base relative to the mounting plate.

9. The first adjustment mechanism includes: a cradle configured to hold the nozzle; at least one clamp configured to attach the nozzle to the pedestal; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a spring configured to bias the spherical structure toward the groove; a spherical bearing including:

7. The system of claim 6, wherein the base of the second adjustment mechanism is configured to rotate the spherical structure of the first adjustment mechanism based on adjustment of the first adjustment mechanism by the second adjustment mechanism.

10. The system of claim 6 , wherein the locking device is further configured to lock and unlock the position of the second adjustment mechanism.

11. The system of claim 1 , wherein the second adjustment mechanism includes a plurality of adjustment members configured to adjust the second adjustment mechanism in orthogonal directions to adjust the position of the nozzle.

12. The system of claim 11 , wherein the plurality of adjustment members comprises a corresponding plurality of motor-driven piezoelectric actuators configured to actuate the plurality of adjustment members to control the direction of the droplet stream.

13. The system of claim 1 , wherein the first and second adjustment mechanisms are configured to adjust the position of the nozzle within a range of approximately 0.01 degrees to 1.75 degrees relative to a plane of the alignment mechanism.

14. 2. The system of claim 1, wherein the first and second adjustment mechanisms are configured to adjust the position of the nozzle within a range of approximately 0.01 degrees to 1.75 degrees relative to each of a vertical plane of the alignment mechanism and a horizontal plane of the alignment mechanism.

15. The system of claim 1 , further comprising a shielding structure having an opening disposed at an end of the nozzle, the droplets passing through the opening.

16. The system of claim 1 , wherein the alignment mechanism is formed of a coated metal.

17. The system of claim 1 , wherein the alignment mechanism is formed from titanium nitride coated stainless steel.

18. generating droplets from a nozzle of a droplet generating device, the nozzle being coupled to a first portion of an alignment mechanism; delivering the droplets along a droplet stream towards a target area; determining a position of the droplet stream relative to the target area; adjusting a position of the nozzle based on the determination by interaction of the first portion of the alignment mechanism and a second portion of the alignment mechanism, the second portion being coupled to an exterior surface of the droplet generation device; and A method comprising:

19. the first portion of the alignment mechanism is disposed within a vacuum environment within the droplet generation device; The method of claim 18 , wherein the adjusting of the position of the nozzle is performed by adjusting the second portion outside the vacuum environment.

20. The adjustment is 20. The method of claim 18, comprising rotating first, second, third, and / or fourth adjustment members of the second portion to adjust intermediate structures of the second portion in corresponding first, second, third, and / or fourth directions.

21. generating droplets from a nozzle of a droplet generating device, the nozzle being coupled to a first portion of an alignment mechanism; delivering the droplets along a droplet stream towards a target area; determining a position of the droplet stream relative to the target area; adjusting a position of the nozzle based on the determination by interaction of the first portion of the alignment mechanism and a second portion of the alignment mechanism, the second portion being coupled to an exterior surface of the droplet generation device; and A method comprising: The adjusting step comprises: rotating first, second, third, and / or fourth adjustment members of the second portion to adjust an intermediate structure of the second portion in a corresponding first, second, third, and / or fourth direction, wherein the rotation of the first, second, third, and / or fourth adjustment members is performed using a corresponding first, second, third, and / or fourth piezoelectric actuator.

22. 21. The method of claim 20, wherein the adjustment of the intermediate structure of the second portion causes a proportional adjustment of the first portion.

23. 21. The method of claim 20, wherein the adjustment of the intermediate structure causes a corresponding adjustment in the orientation of the nozzle relative to a plane of the first portion of the alignment feature within a range of about 0.01 degrees to 1.75 degrees.

24. 20. The method of claim 18, further comprising locking the second portion of the alignment mechanism in a fixed position by tightening a locking device extending through the second portion.

25. a cradle configured to hold the nozzle; at least one clamp configured to attach the nozzle to the pedestal; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a spring configured to bias the spherical structure toward the groove; a spherical bearing including: forming the first portion using 20. The method of claim 18, wherein the adjusting the position of the nozzle comprises moving the second adjustment mechanism to move the first adjustment mechanism, thereby rotating the spherical structure.

26. 20. The method of claim 18, further comprising: delivering the droplets from the nozzle through an opening toward the target area.

27. a first portion of an alignment mechanism coupled to the nozzle and disposed within the droplet generation device; a second portion of the alignment mechanism coupled to an outer surface of the droplet generation device; the second portion includes a second adjustment mechanism configured to adjust the first adjustment mechanism of the first portion to adjust the position of the nozzle and align a path of the droplet stream with respect to a target area; The first adjustment mechanism includes: a cradle configured to hold the nozzle; at least one clamp configured to attach the nozzle to the pedestal; A spherical bearing, a spherical structure rigidly coupled to the cradle and supported within the groove; a leaf spring configured to bias the spherical structure toward the groove; a spherical bearing including: Including, The second adjustment mechanism includes: a base rigidly coupled to the nozzle; a mounting plate coupled to a frame of the system and positioned on the base; a pad rigidly coupled to the mounting plate; an intermediate structure rigidly coupled to the base and configured to be coupled to the pad; Including, the base is movable relative to the mounting plate, the intermediate structure is further configured to move the base relative to the mounting plate, the base is configured to rotate the spherical structure based on adjustment of the intermediate structure, the adjustment of the intermediate structure causes proportional adjustment of the first portion.

28. 30. The system of claim 27, further comprising a locking device configured to lock the base to the mounting plate.

29. 28. The system of claim 27, wherein the second adjustment mechanism includes a plurality of motor-driven piezoelectric actuator adjustment members configured to adjust the second adjustment mechanism in orthogonal directions to control the direction of the path of the droplet stream.