Composite Confinement Device Assembly Including Photonics Platform

Abstract

A composite confinement device assembly is provided. The composite confinement device assembly includes a quantum object confinement device and a photonic platform. The confinement device includes one or more electrical components and is fabricated on a confinement device substrate. The photonic platform includes one or more photonic components hosted by the photonic platform substrate. The photonic platform substrate is mechanically coupled to the confinement device substrate to form the composite confinement device assembly.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Application No. 63 / 378,124, filed October 3, 2022, and U.S. Application No. 63 / 511,956, filed July 5, 2023, the entire contents of which are incorporated herein by reference.

[0002] Various embodiments relate to a composite confinement device assembly including a photonics platform, a system including the composite confinement device assembly, and a method for fabricating the composite confinement device assembly. One example embodiment relates to a composite confinement device assembly including a confinement device formed on a confinement device substrate and a photonics platform secured thereto. One example embodiment relates to a quantum charge coupled device (QCCD)-based quantum computer including the composite confinement device assembly. [Background technology]

[0003] When using ion traps to perform quantum computing, quantum computer gates and other functions are performed by applying laser beams to ions confined within the ion trap. Delivering these laser beams to large-scale quantum computers is a significant challenge due to the low ion height above the trap, the Rayleigh range of the laser beam, and the amount of laser power that must be delivered to the ions in the trap to perform the functions of the quantum computer. Through a commitment of effort, ingenuity, and innovation, many of the deficiencies of prior laser beam application techniques have been overcome by developing solutions structured in accordance with embodiments of the present invention, many examples of which are described in detail herein. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Application Serial No. 16 / 717,602 [Patent Document 2] U.S. Application No. 17 / 533587 [Patent Document 3] U.S. Application Serial No. 17 / 810,082 [Patent Document 4] U.S. Application Serial No. 17 / 583,308 Summary of the Invention [Means for solving the problem]

[0005] Example embodiments provide composite confinement device assemblies, assemblies or systems including the composite confinement device assemblies, and methods for fabricating the composite confinement device assemblies. In various embodiments, the composite confinement device assembly includes a confinement device formed on a confinement device substrate and a photonics platform secured relative to the confinement device. For example, in various embodiments, the photonics platform is secured to the confinement device substrate via spacing structures (e.g., legs, nanopositioner mounting systems, and / or the like). An example embodiment provides a QCCD-based quantum processor including the composite confinement device assembly.

[0006] According to one aspect of the present disclosure, a composite confinement device assembly is provided. In one example embodiment, the composite confinement device assembly includes a quantum object confinement device with one or more electrical components. The quantum object confinement device is fabricated on a confinement device substrate. The composite confinement device assembly further includes a photonic platform with one or more photonic components hosted by a photonic platform substrate. The photonic platform substrate is mechanically coupled to the confinement device substrate to form the composite confinement device assembly.

[0007] In one example embodiment, the photonic platform comprises a conductive layer on a surface of the photonic platform substrate facing the quantum object confinement device, the conductive layer configured to be held at a constant potential and comprising a transparent section of the conductive layer.

[0008] In one example embodiment, the surface of the conductive layer facing the quantum object confinement device has anti-reflective properties.

[0009] In one example embodiment, the photonic platform comprises an anti-reflective layer on a surface of the photonic platform substrate facing away from the quantum object confinement device.

[0010] In one example embodiment, the photonic platform comprises one or more photonic platform sink components configured to act as respective optical sinks configured to enable and / or facilitate the removal of one or more unwanted photons from a space between the quantum object confinement device and the photonic platform to reduce unwanted illumination of one or more non-target quantum objects located between the quantum object confinement device and the photonic platform.

[0011] In an example embodiment, the one or more sink components comprise one or more of a hole in the photonic platform configured to pass at least a first portion of the one or more undesired photons through the photonic platform substrate, a high optical transmittance engineered film configured to transmit at least a second portion of the one or more undesired photons, and a photon absorber configured to absorb at least a third portion of the one or more undesired photons.

[0012] In an example embodiment, the one or more photonic components of the photonic platform include one or more planar optical elements, one or more guided mode photonic elements, one or more micro-machined lenses, or one or more claddings.

[0013] In one example embodiment, the quantum object confinement device comprises a confinement device photon sink configured to enable and / or facilitate removal of one or more undesired photons from a space between the quantum object confinement device and the photonic platform to reduce undesired illumination of one or more non-target quantum objects located in the space between the quantum object confinement device and the photonic platform, the confinement device photon sink comprising one or more of: a hole or transparent window in the confinement device substrate configured to pass at least a first portion of the one or more undesired photons through the confinement device substrate; and a photon absorber configured to absorb at least a second portion of the one or more undesired photons.

[0014] In an example embodiment, the hole or transparent window in the confinement device substrate configured to pass at least a first portion of the one or more undesired photons through the confinement device substrate is further configured to dissipate at least a first portion of the one or more undesired photons.

[0015] In one example embodiment, the hole in the quantum object confinement device comprises a sink photon absorber configured to absorb at least a first portion of the one or more unwanted photons in the hole in the confinement device substrate.

[0016] In one example embodiment, an optical component is formed on the confinement device substrate, the optical component being configured to be illuminated by a first optical beam or pulse train and to provide a second optical beam or pulse train toward a defined location, the defined location being defined at least in part by the confinement device.

[0017] In one example embodiment, the photonic platform is configured to at least one of (a) provide a first optical beam or pulse train to an optical component or (b) provide a third optical beam or pulse train to a defined location, wherein the third optical beam or pulse train is coaxial with the second optical beam or pulse train.

[0018] In one example embodiment, the photonic platform substrate is mechanically coupled to the confinement device substrate via one or more spacing structures.

[0019] In an example embodiment, each of the one or more spacing structures has a thickness that corresponds to a set distance between the photonic platform and the confinement device substrate.

[0020] In an example embodiment, at least one of the one or more spacing structures comprises a respective actuator configured to mechanically couple the photonic platform to the confinement device substrate in an adjustable manner.

[0021] In one example embodiment, each actuator comprises a piezoelectric actuator.

[0022] In one example embodiment, the photonic platform substrate is mechanically coupled to the confinement device substrate via a nanopositioner mounting device.

[0023] According to another aspect, a method is provided for fabricating a composite confinement device assembly. In one example embodiment, the method includes fabricating a photonic platform comprising one or more photonic components hosted by a photonic platform substrate, the photonic platform substrate having one or more spacing structures extending from a confinement device-facing surface of the photonic platform, and coupling the one or more spacing structures to the confinement device substrate, the confinement device substrate having a quantum object confinement device with one or more electrical components formed thereon.

[0024] In an example embodiment, the method further includes bonding a spacer wafer to the photonic platform substrate and etching the spacer wafer to form one or more spacing structures.

[0025] In one example embodiment, the photonic platform substrate comprises a transparent material.

[0026] In an example embodiment, the photonic platform substrate comprises silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, tantalum pentoxide, hafnia, or silicon carbide, and the spacer wafer comprises silicon, silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, tantalum pentoxide, hafnia, or silicon carbide.

[0027] In an example embodiment, fabricating the photonic platform comprises fabricating one or more photonic components on and / or in the photonic platform substrate.

[0028] In an example embodiment, the one or more photonic components comprise one or more planar optical elements, one or more guided-mode photonic elements, one or more micro-machined lenses, one or more claddings, one or more photonic filters, one or more photonic converters, one or more photonic detectors, or one or more active optical elements.

[0029] In one example embodiment, fabricating the photonic platform comprises fabricating one or more first photonic components on a surface of a photonic platform substrate configured to back against the confinement device, fabricating a cladding layer on the one or more first photonic components, smoothing the surface of the cladding layer, and fabricating one or more second photonic components on the smoothed cladding.

[0030] In one example embodiment, an anti-reflective coating is applied to the smoothed cladding surface.

[0031] In one example embodiment, the cladding layer and the photonic platform substrate comprise a common transparent material.

[0032] In one example embodiment, fabricating the photonic platform comprises fabricating a conductive layer on a surface of the photonic platform substrate configured to face the confinement device.

[0033] In one example embodiment, the surface of the conductive layer configured to face the quantum object confinement device has anti-reflective properties.

[0034] In one example embodiment, the relative positions of the one or more spacing structures are defined using lithography.

[0035] In one example embodiment, the method further includes patterning one or more alignment marks on each of the one or more spacing structures and patterning alignment marks corresponding to each of one or more bonding locations on the confinement device substrate, and bonding the one or more spacing structures to the confinement device substrate comprises aligning the one or more alignment marks with the corresponding alignment marks and bonding the one or more spacing structures to the bonding locations on the confinement device substrate.

[0036] In an example embodiment, the one or more spacing structures comprise respective actuators configured to adjust the relative positioning of the photonic platform and the confinement device with respect to one another.

[0037] In one example embodiment, each actuator comprises a respective piezoelectric actuator.

[0038] According to another aspect, a quantum processor is provided. In one example embodiment, the quantum processor includes a cryogenic and / or vacuum chamber and a composite confinement device assembly disposed within the cryogenic and / or vacuum chamber.

[0039] According to another aspect, a quantum computer is provided. In one example embodiment, the quantum computer includes a quantum processor including a composite confinement device assembly and a controller configured to control at least one operation of a photonic component of a photonic platform including a voltage source or an active optical element configured to provide a voltage signal to an electrical component of the quantum object confinement device.

[0040] According to another aspect, a composite confinement device assembly is provided that includes a quantum object confinement device fabricated in a confinement device substrate, a photonic platform comprising one or more photonic components hosted by the photonic platform substrate, and a loading opening configured to pass a quantum object through the quantum object confinement device.

[0041] In one example embodiment, the photonic platform substrate is mechanically coupled to the confinement device substrate to form a composite confinement device assembly, and the quantum object is generated by a source outside the composite confinement device assembly.

[0042] In one example embodiment, the loading opening comprises a through-hole through the photonic platform.

[0043] In one example embodiment, the photonic platform comprises one or more photonic layers, and the loading aperture passes through all of the photonic layers.

[0044] In one example embodiment, the composite confinement device assembly comprises a confinement device volume created by mechanically coupling a confinement device substrate and a photonic platform substrate.

[0045] In an example embodiment, the composite confinement device assembly comprises a particle flux opening configured to pass quantum objects that exit the confinement device volume without being captured and / or confined by the confinement device.

[0046] In one example embodiment, the particle flux aperture comprises a through-hole through the photonic platform.

[0047] In one example embodiment, the particle flux opening is parallel to the loading opening.

[0048] In one example embodiment, the particle flux opening comprises a through-hole through the containment device.

[0049] In one example embodiment, the particle flux opening is collinear with the loading opening.

[0050] Having thus described the invention in general terms, reference will now be made to the accompanying drawings, which are not necessarily drawn to scale. [Brief explanation of the drawings]

[0051] [Figure 1] FIG. 1 is a schematic diagram illustrating an example quantum computing system comprising a composite confinement device assembly, according to an example embodiment. [Figure 2] 1 is a schematic cross-sectional view of a portion of a composite containment device assembly, according to an example embodiment; [Figure 3A] 1 is a schematic cross-sectional view of a composite containment device assembly including a light sink, according to an example embodiment; [Figure 3B] 1 is a schematic cross-sectional view of a composite containment device assembly including a light sink, according to an example embodiment; [Figure 4] 1 is a schematic cross-sectional view of a composite confinement device assembly including a collection optical path, according to an example embodiment; [Figure 5A] 1A-1C are schematic cross-sectional views illustrating example cavities formed at least in part using surface photonic components, according to an example embodiment; [Figure 5B] 1A-1C are schematic cross-sectional views illustrating example cavities formed at least in part using surface photonic components, according to an example embodiment; [Figure 5C]1A-1C are schematic cross-sectional views illustrating example cavities formed at least in part using surface photonic components, according to an example embodiment; [Figure 5D] 1A-1C are schematic cross-sectional views illustrating example cavities formed at least in part using surface photonic components, according to an example embodiment; [Figure 5E] 1A-1C are schematic cross-sectional views illustrating example cavities formed at least in part using surface photonic components, according to an example embodiment; [Figure 6] 1 is a flowchart illustrating processes, procedures and / or operations for fabricating a composite containment device assembly, according to an example embodiment. [Figure 7A] 1A-1C are schematic cross-sectional views illustrating various points in the fabrication of a composite containment device assembly, according to an example embodiment. [Figure 7B] 1A-1C are schematic cross-sectional views illustrating various points in the fabrication of a composite containment device assembly, according to an example embodiment. [Figure 7C] 1A-1C are schematic cross-sectional views illustrating various points in the fabrication of a composite containment device assembly, according to an example embodiment. [Figure 7D] 1A-1C are schematic cross-sectional views illustrating various points in the fabrication of a composite containment device assembly, according to an example embodiment. [Figure 7E] 1A-1C are schematic cross-sectional views illustrating various points in the fabrication of a composite containment device assembly, according to an example embodiment. [Figure 7F] 1A-1C are schematic cross-sectional views illustrating various points in the fabrication of a composite containment device assembly, according to an example embodiment. [Figure 8] FIG. 1 is a schematic diagram of an example controller of a quantum computer configured to control the operation of various components of a quantum processor, according to various embodiments. [Figure 9] FIG. 1 is a schematic diagram of example computational entities of a quantum computer system that may be used in accordance with an example embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0052] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, which illustrate some, but not all, embodiments of the invention. Indeed, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (also written " / ") is used herein in both a disjunctive and conjunctive sense unless otherwise indicated. The terms "exemplary" and "illustrative" are used for examples without an indication of a level of quality. The terms "substantially," "about," and "approximately" refer to within workmanship and / or manufacturing tolerances and / or user measurement capabilities, unless otherwise indicated. Like numbers refer to like elements throughout.

[0053] Example embodiments provide apparatus, systems, and corresponding methods for composite confinement device assemblies, various systems comprising at least one composite confinement device assembly, including quantum processors (e.g., QCCD-based quantum processors) and / or quantum computers comprising at least one composite confinement device assembly. Various embodiments provide fabrication methods for fabricating composite confinement device assemblies.

[0054] In various embodiments, a composite confinement device assembly includes at least a portion of a confinement device and a signal management system. For example, in various embodiments, the composite confinement device assembly includes a confinement device substrate on which a confinement device is formed. For example, electrical components forming and / or defining the confinement device are disposed and / or formed on the confinement device substrate. The electrical components include electrodes configured to define a confinement region within which a quantum object may be confined. The composite confinement device assembly further includes a photonics platform. In various embodiments, the photonics platform is part of the signal management system configured to control and / or provide photonic beams and / or pulses provided to one or more object locations. The object locations are defined, at least in part, by the confinement device. For example, the photonics platform includes optical components that can be used to control and / or provide photonic beams and / or pulses provided to one or more object locations. The photonics platform is coupled to and / or secured to the confinement device substrate via spacing structures (e.g., legs, spacers, nanopositioner mounting systems, and / or the like).

[0055] In various embodiments, the confinement device is configured to confine a plurality of quantum objects at respective object locations defined at least in part by the confinement device. The confinement device is further configured to transport the respective quantum objects between the respective object locations. The signal management system is configured to provide selected operating signals (e.g., laser beams, laser pulses, microwave beams or pulses, and / or the like) to the particular object locations.

[0056] In an example embodiment, the confinement device substrate further includes one or more optical components disposed and / or formed thereon. In various embodiments, the one or more optical components are configured to provide respective manipulation signals to respective object locations defined within the confinement region of the confinement device and / or receive / detect respective optical signals emitted by respective quantum objects located at the respective object locations. For example, the one or more optical components disposed and / or formed on the confinement device substrate are part of a signal manipulation system. In various embodiments, the one or more optical components include passive and / or active optical elements. In an example embodiment, the active optical elements include photodetectors, such as photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal-oxide semiconductor (CMOS) sensors, microelectromechanical systems (MEMS) sensors, modulators, and / or other photodetectors.

[0057] In various embodiments, the confinement device chip defines a plurality and / or an array of object locations. For example, the confinement device chip may be configured such that application of appropriate voltage signals to its electrical components (e.g., electrodes) generates electrical potentials configured to confine quantum objects at the respective object locations. In various embodiments, subarrays of object locations may be configured to perform specific functions (e.g., readout functions, performing single-qubit or multi-qubit (e.g., two-qubit) gates, and / or the like). In various embodiments, optical components disposed on the confinement device substrate and / or photonic components disposed on the photonic platform configured to perform specific functions are arranged on their respective substrates accordingly.

[0058] In various embodiments, the confinement device is an ion trap, such as a surface ion trap, a Paul ion trap, and / or others. Various other embodiments may include various other confinement devices (e.g., optical traps and / or others). In various embodiments, the quantum object is a neutral or ionic atom, a neutral, ionic, or multipolar molecule, a quantum particle, a quantum dot, and / or other object configured to be confined by the confinement device and having a quantum state that can be manipulated and / or controlled.

[0059] In various embodiments, the signal management system is configured to generate, provide, and control parameters (e.g., wavelength, intensity, phase, polarization, and / or other) of electromagnetic signals applied to one or more object locations defined at least in part by the confinement device for the purpose of controlling the quantum state of one or more quantum objects confined by the confinement device. In various embodiments, the signal management system comprises photonic components that are part of the photonic platform. In various embodiments, the signal management system may also include one or more optical components formed on the confinement device substrate. The photonic and / or optical components may include active and / or passive optical elements configured to generate, provide, collect / detect, and / or control parameters of the manipulation signals applied to and / or collected from the various object locations defined by the confinement device. In one example embodiment, the active optical elements include photodetectors, such as photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal-oxide semiconductor (CMOS) sensors, microelectromechanical systems (MEMS) sensors, modulators, and / or other photodetectors. In various embodiments, the photonic and / or optical components of the signal management system comprise planar optics (e.g., metasurfaces, diffractive optical elements, waveguides, tapers, wiring elements, grating couplers, ring resonators, etc.), guided-mode photonics (e.g., waveguides, tapers, wiring elements, grating couplers, ring resonators, modulators, etc.), photonic filters, photonic converters, micromachined lenses, and / or others. For example, in various embodiments, the photonic and / or optical components of the signal management system comprise one or more diffractive optical elements (DOEs), passive metasurfaces, active metasurfaces, optical modulators, low-loss waveguides, amplifiers, on-chip lasers, photodetectors, grating couplers, beamsplitters, edge couplers, optical local oscillators, tapers, reference cavities, optical sinks, optical absorbing structures, anti-reflective coatings, optical wiring elements, resonant structures, and / or others.In various embodiments, various photonic and / or optical components of the signal management system have electrical components associated with them (e.g., optical elements may be active optical elements with electrically controlled aspects), and other photonic and / or optical components of the signal management system do not have electrical components associated with them (e.g., optical elements may be passive optical elements and / or active elements controlled via techniques other than electrical signal-based control).

[0060] In various embodiments, the confinement device and / or the confinement device substrate define a device plane. In various embodiments, the photonic platform defines a platform plane. In various embodiments, the platform plane is parallel to the device plane but not coplanar with the device plane. For example, the platform plane and the device plane are separated by a set distance. A confinement device volume is defined between the confinement device substrate and the photonic platform. A confinement region generated through operation of the electrical components of the confinement device (formed on the confinement device substrate) generates a confinement region located within the confinement device volume defined between the confinement device and the photonic platform. For example, an object location defined at least in part by the confinement device is within the confinement device volume defined between the confinement device and the photonic platform.

[0061] In various embodiments, the composite confinement device assembly is disposed within an operating region of a cryogenic and / or vacuum chamber and configured to operate under cryogenic and / or ultra-high vacuum conditions. For example, the composite confinement device assembly can be operated at temperatures below 124 K and / or below 10 -6 The device is configured to operate at a pressure of less than 100 Pa.

[0062] In various embodiments, the composite confinement device assemblies are part of a QCCD-based quantum system that includes a confinement device and a signal management system configured to confine a quantum object. In various embodiments, the signal management system includes a photonic platform and may include one or more optical components disposed on the confinement device substrate. In various embodiments, each composite confinement device assembly is part of a different quantum and / or atomic system (e.g., an atomic clock, a quantum clock, and / or other system including a confined quantum object).

[0063] Conventionally, laser beams are provided to locations within an ion trap through the use of external lasers and free-space optics configured to provide the laser beam to specific locations within the ion trap. However, the amount of space required for such beam paths is significant (e.g., several square meters) even to provide a laser beam to a relatively small number of defined locations within the ion trap. Additionally, the precision with which a laser beam can be provided to locations within the ion trap through such conventional means may limit the density of defined locations in the ion trap. Furthermore, ion traps are typically utilized within cryogenic and / or vacuum chambers. As such, the laser beam must pass through the cryogenic and / or vacuum chamber and any radiation and / or thermal shielding therein. Thus, technical challenges exist regarding how to provide operating signals to quantum object confinement devices that are efficient and can be accurately scaled to the size and / or dimensions of the quantum object confinement device. These technical challenges are exacerbated as the size of quantum object confinement devices is scaled up (e.g., as the number of locations or object positions defined for the quantum object confinement device increases).

[0064] Various embodiments provide technical solutions to these technical problems. In particular, in various embodiments, optical elements of the signal management system are incorporated and / or integrated into a composite confinement device assembly. For example, one or more optical elements of the signal management system are disposed within a cryogenic and / or vacuum chamber. For example, one or more optical elements of the signal management system include photonic components that are part of a photonic platform that is coupled and / or fixed relative to the confinement device and / or the confinement device substrate. In some embodiments, one or more optical elements of the signal management system include optical components disposed on the confinement device substrate. These one or more optical elements include passive and / or active optical elements configured to control various parameters of respective manipulation signals and precisely direct the respective manipulation signals to respective object locations. The optical elements may include one or more active optical elements, including photodetectors, such as photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal-oxide semiconductor (CMOS) sensors, microelectromechanical systems (MEMS) sensors, modulators, and / or other photodetectors. In various embodiments, the use of a photonics platform reduces the space requirements for free-space optics beam path configurations, the number of cryogenic and / or vacuum chamber pass-throughs, and / or other factors. Furthermore, the configuration of the composite confinement device assembly of various embodiments reduces the technical problem of adding a signal management system for larger confinement devices. For example, the photonics platform is scalable with the confinement device such that the signal management system is configurable to accommodate different numbers and / or arrangements / layouts of object locations. Thus, various embodiments provide a technical solution to the technical problem of how to provide manipulation signals to object locations such that the manipulation signals are efficiently and effectively provided to the object locations even when an array of object locations defined at least in part by the confinement device forms a two- or three-dimensional array.

[0065] Example Quantum Computing System with Composite Confinement Device Assembly In various embodiments, the composite confinement device assembly is part of a QCCD-based quantum computer, an example of which is illustrated by FIG.

[0066] 1 provides a schematic diagram of an example quantum computing system 100 including a composite confinement device assembly 200, according to an example embodiment. In various embodiments, composite confinement device assembly 200 includes a confinement device substrate 205 and a photonic platform 215. In various embodiments, photonic platform 215 and confinement device substrate 205 are coupled and / or secured relative to one another via spacing structure 202. In various embodiments, a plurality of electrical components forming and / or defining confinement device 210 are formed and / or disposed on confinement device substrate 205.

[0067] In various embodiments, the composite confinement device assembly 200 is placed within a cryogenic and / or vacuum chamber 40. For example, the confinement device substrate 205 and the photonic platform 215 are placed within the cryogenic and / or vacuum chamber 40.

[0068] In various embodiments, confinement device 210 and / or confinement device substrate 205 define a device plane. In various embodiments, photonic platform 215 defines a platform plane. In various embodiments, the platform plane is parallel to but not coplanar with the device plane. For example, the platform plane and the device plane are separated by a set distance h. In various embodiments, the set distance h is in the range of 5 microns to 500 microns. In one example embodiment, the set distance h is 2 to 5 times the height at which confinement device 210 is configured to confine quantum objects above the surface of confinement device substrate 205 that is configured to face photonic platform 215.

[0069] The open space between the confinement device substrate and the photonic platform defines a confinement device volume 206. A confinement region generated through operation of the electrical components of the confinement device 210 (formed in the confinement device substrate 205) generates a confinement region that is located within the confinement device volume 206 defined between the confinement device and the photonic platform. For example, an object location defined at least in part by the confinement device is within the confinement device volume 206 defined between the confinement device and the photonic platform.

[0070] In various embodiments, quantum computing system 100 comprises a signal management system. In various embodiments, the signal management system comprises photonic platform 215. For example, photonic platform 215 comprises one or more photonic components used to control and / or provide parameters (e.g., wavelength, focus, polarization, phase, propagation direction, and / or intensity) of one or more manipulation signals (e.g., electromagnetic signals configured to cause controlled evolution of the quantum state of the quantum object) to respective object locations. In various embodiments, the signal management system further comprises one or more optical components formed and / or disposed on and / or in confinement device substrate 205. In one example embodiment, the signal management system includes various optical elements, manipulation sources (e.g., lasers, masers, microwave sources, etc.) 300, and / or others located outside of cryogenic and / or vacuum chamber 40. For example, one or more optical elements and / or manipulation sources located outside the cryogenic and / or vacuum chamber 40 are, in various embodiments, coupled via optical fibers 86 and / or free-space optics to respective beam paths defined at least in part by the photonic components of the photonic platform 215 and / or the optical components of the confinement device substrate 205.

[0071] In various embodiments, quantum computing system 100 comprises computational entity 10 and quantum computer 110. In various embodiments, quantum computer 110 comprises controller 30 and quantum processor 115. In various embodiments, quantum processor comprises cryogenic and / or vacuum chamber 40 enclosing composite confinement device assembly 200 (e.g., ion trap-photonic platform assembly), one or more optical elements and / or manipulation sources 300 external to cryogenic and / or vacuum chamber 40, one or more voltage sources 50 configured to provide voltage signals to electrical components of composite confinement device assembly 200. In various embodiments, quantum processor 115 further includes one or more photodetectors configured to detect optical signals generated by quantum objects confined at each object position, magnetic field generators configured to generate desired magnetic fields and / or magnetic field gradients at each object position, and / or the like.

[0072] In various embodiments, the cryogenic and / or vacuum chamber 40 is a temperature and / or pressure controlled chamber. For example, the quantum computing system 100 may include vacuum and / or temperature control components operatively coupled to the cryogenic and / or vacuum chamber 40.

[0073] In various embodiments, quantum computer 110 comprises one or more voltage sources 50. For example, voltage source 50 may comprise multiple voltage drivers and / or voltage sources and / or at least one radio frequency (RF) driver and / or voltage source. Voltage source 50, in one example embodiment, may be electrically coupled to corresponding electrical components 212 (e.g., electrodes) of confinement device 210. For example, electric and / or electromagnetic fields formed at least in part by applying voltage signals generated by voltage source 50 to electrical components 212 of confinement device 210 cause and / or form a confinement region of the confinement device.

[0074] In various embodiments, computational entity 10 is configured to allow a user to provide input to quantum computer 110 (e.g., via a user interface of computational entity 10) and receive, view, and / or otherwise enable output from quantum computer 110. Computational entity 10 may be in communication with a controller 30 of quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In an example embodiment, computational entity 10 may convert, organize, format, and / or otherwise translate information / data, quantum computing algorithms and / or circuits, and / or otherwise into a computational language, executable instructions, command set, and / or otherwise that controller 30 can understand and / or implement.

[0075] In various embodiments, controller 30 is configured to control and / or be in electrical communication with voltage source 50, the cryogenic and / or vacuum system controlling the temperature and / or pressure within cryogenic and / or vacuum chamber 40, manipulation source 60, photodetector, and / or other systems controlling various environmental conditions (e.g., temperature, pressure, magnetic field, and / or other) within cryogenic and / or vacuum chamber 40, and / or is configured to manipulate and / or effect the controlled evolution of the quantum state of one or more quantum objects confined by the confinement device. For example, controller 30 may cause a quantum circuit and / or algorithm to be executed by the controlled evolution of the quantum state of one or more quantum objects within the confinement device. For example, controller 30 may cause a readout procedure, possibly as part of executing the quantum circuit and / or algorithm. In various embodiments, quantum objects confined within the confinement device are used as qubits in quantum processor 115 and / or quantum computer 110.

[0076] Example of a composite containment device assembly 2 provides a schematic cross-sectional view of an example embodiment of a composite confinement device assembly 200. Composite confinement device assembly 200 includes a confinement device 210 and a photonic platform 215 formed on a confinement device substrate 205. Photonic platform 215 and confinement device substrate 205 are coupled to and / or secured relative to one another via spacing structures 202 (e.g., 202A, 202B).

[0077] In various embodiments, confinement device 210 and / or confinement device substrate 205 define device plane 208. In various embodiments, photonic platform 215 defines platform plane 218. In various embodiments, platform plane 218 is parallel to device plane 208 but not coplanar with device plane 208. For example, platform plane 218 and device plane 208 are separated by a set distance h. The relationship between platform plane 218 and device plane 208 is controlled and / or maintained by spacing structure 202. For example, the set distance h and / or the parallel relationship between platform plane 218 and device plane 208 is controlled and / or maintained by spacing structure 202. A confinement device volume 206 is defined and / or disposed between confinement device substrate 205 and photonic platform 215. The confinement region created through operation of electrical components 212 (e.g., 212A, 212B, 212C, 212D) of confinement device 210 (formed on confinement device substrate 205) creates a confinement region located within confinement device volume 206 defined between confinement device 210 and photonic platform 215. For example, object location 5 (e.g., 5A, 5B) defined at least in part by confinement device 210 is within confinement device volume 206 defined between confinement device 210 and photonic platform 215.

[0078] In various embodiments, composite confinement device assembly 200 comprises confinement device 210. Confinement device 210 comprises a plurality of electrical components 212 (e.g., 212A, 212B, 212C, 212D), such as electrodes in one example embodiment, configured to generate a confinement potential that defines one or more confinement regions of confinement device 210. In various embodiments, the plurality of electrical components 212 of confinement device 210 are formed and / or disposed on confinement device substrate 205. For example, controller 30 may control voltage source 50 to provide electrical signals to electrical components 212 of confinement device 210 such that electrical components 212 generate the confinement potential. The confinement potential is configured to confine a plurality of quantum objects within one or more confinement regions defined by confinement device 210 and disposed within confinement device volume 206 between confinement device substrate 205 and photonic platform 215. In various embodiments, the electrical components 212 and / or the containment potential are configured to define multiple object positions within the containment region and / or containment device volume 206 .

[0079] In various embodiments, the object locations are arranged in a one-dimensional or two-dimensional layout. For example, in one example embodiment, the object locations are arranged along the axes of the linear configuration of electrical components 212 of confinement device 210. In another example embodiment, the object locations are arranged in a two-dimensional array or layout defined by the two-dimensional configuration of electrical components 212 of confinement device 210. While example confinement devices with linear configurations of electrical components (e.g., electrodes) are described in U.S. Application No. 16 / 717,602, filed December 17, 2019, various other confinement devices having linear electrical component configurations may be used in various embodiments. Although several example confinement devices having two-dimensional electrical component configurations are described in U.S. Application No. 17 / 533,587, filed November 23, 2021, and U.S. Application No. 17 / 810,082, filed June 30, 2022, various other confinement devices having two-dimensional electrical component configurations may be used in various embodiments. The entire contents of U.S. Application No. 16 / 717,602, filed December 17, 2019, U.S. Application No. 17 / 533587, filed November 23, 2021, and U.S. Application No. 17 / 810,082, filed June 30, 2022, are incorporated herein by reference.

[0080] In various embodiments, voltage source 50 provides respective electrical signals to respective electrical components 212 (e.g., electrodes) of confinement device 210 such that a confinement potential is formed. Based on the contour and time evolution of the confinement potential (controlled by controller 30 via controlling the operation of voltage source 50), one or more quantum objects are confined to respective object locations 5, moved between respective object locations, and / or the like. When the quantum objects are located at the object locations, one or more functions (e.g., quantum computing functions) may be performed on the quantum objects. One example function that may be performed on a quantum object is photoionization of the quantum object. For example, an operating signal may be applied to a quantum object (e.g., an atom or molecule) to photoionize the quantum object.

[0081] Another example of a function that can be performed on a quantum object is state preparation of the quantum object. For example, one or more manipulation signals may be applied to the quantum object to prepare it into a particular quantum state. For example, the particular quantum state may be a state within a defined qubit space used by a quantum computer such that the quantum object can be used as a qubit in the quantum computer.

[0082] Another example function that can be performed on a quantum object is to read out the quantum state of the quantum object. For example, an operating signal (e.g., a readout signal) may be applied to the quantum object. When the wave function of the quantum object collapses to a first state in the qubit space, the quantum object will fluoresce in response to the readout signal being applied to it. When the wave function of the quantum object collapses to a second state in the qubit space, the quantum object will not fluoresce in response to the readout signal being applied to it. Photodetectors configured to receive signals emitted by the quantum objects located at each object position 5 may then detect whether the quantum object has fluoresced so that the quantum state of the quantum object can be determined.

[0083] Another example function that can be performed on a quantum object is cooling a quantum object or a quantum object crystal comprising the quantum object. The quantum object crystal is a pair or set of quantum objects, at least one of the quantum objects in the quantum object crystal is a qubit quantum object used as a qubit in a quantum computer, and at least one quantum object in the quantum object crystal is used to perform cooperative cooling of the qubit quantum objects. For example, an operation signal (e.g., a cooling signal or cooperative cooling signal) may be applied to the quantum object or quantum object crystal to cool the (qubit) quantum object (e.g., reduce the vibrational and / or other kinetic energy of the (qubit) quantum object).

[0084] Another example function that can be performed on a quantum object is shelving the quantum object. In various embodiments, a quantum object in a second state in qubit space may be shelved during a readout function. For example, the shelving operation may include evolving the quantum state of the quantum object in the second state in qubit space to at least a metastable state outside of qubit space while the readout operation is performed. An example shelving process is described in U.S. Application No. 17 / 583,308, filed January 25, 2022, although various other shelving processes may be used in various embodiments. In various embodiments, shelving of the quantum object is performed by applying one or more operating signals to the quantum object while the quantum object is in the second state in qubit space to evolve the quantum state of the quantum object to at least a metastable state outside of qubit space.

[0085] Another example function that can be performed on a quantum object is (optical) repumping of the quantum object. In various embodiments, repumping of the quantum object involves applying one or more operating signals 61 to the quantum object to evolve the quantum state of the quantum object to an excited state.

[0086] Another example function that can be performed on a quantum object is to cause the quantum object to perform a single-qubit gate. For example, one or more manipulation signals may be applied to the quantum object to cause the quantum object to perform a single-qubit quantum gate (e.g., a single-qubit logic function).

[0087] Another example function that can be performed on a quantum object is to cause the quantum object to perform a two-qubit gate. For example, one or more manipulation signals may be applied to a pair or set of quantum objects that includes the quantum object to cause the quantum object and at least one other quantum object to perform a two-qubit (or three or more) quantum gate (e.g., a multi-qubit logic function).

[0088] In various embodiments, one or more optical components 214 (e.g., 214A, 214B, 214C) are formed on the confinement device substrate 205. In various embodiments, the one or more optical components 214 comprise planar optics (e.g., metasurfaces, DOEs), guided-mode photonics (e.g., waveguides), micromachined lenses, and / or others. For example, in various embodiments, the photonic and / or optical components of the signal management system comprise one or more DOEs, passive metasurfaces, active metasurfaces, optical modulators, low-loss waveguides, amplifiers, on-chip lasers, photodetectors, grating couplers, beam splitters, edge couplers, optical local oscillators, tapers, reference cavities, optical sinks, optical absorbing structures, anti-reflective coatings, optical interconnect elements, resonant structures, and / or others. In various embodiments, the one or more optical components 214 are configured to control parameters (e.g., wavelength, focus, polarization, phase, propagation direction, and / or intensity) and / or provide manipulation signals to respective object positions. For example, optical component 214 is associated with each object position 5 such that optical component 214 is part of an optical path for providing a respective operating signal to each object position to cause one or more quantum objects located at each object position to perform a respective function.

[0089] Composite confinement device assembly 200 further includes photonic platform 215. Photonic platform 215 comprises photonic components. In the illustrated embodiment, the photonic components of photonic platform 215 include clad photonic components (e.g., 228A, 228B, 228C) and exposed photonic components 229. In various embodiments, the clad photonic components include one or more waveguide layers 224. In various embodiments, one or more photonic components (e.g., clad photonic component 228 and / or exposed photonic component 229) comprise planar optics (e.g., metasurface, DOE), guided-mode photonics (e.g., waveguide), micromachined lenses, and / or the like. For example, in various embodiments, the photonic components of the signal management system comprise one or more DOEs, passive metasurfaces, active metasurfaces, optical modulators, low-loss waveguides, amplifiers, on-chip lasers, photodetectors, grating couplers, beam splitters, edge couplers, optical local oscillators, tapers, reference cavities, optical sinks, optical absorbing structures, anti-reflection coatings, optical wiring elements, resonant structures, and / or the like. In various embodiments, the one or more photonic components are configured to control parameters (e.g., wavelength, focus, polarization, phase, propagation direction, and / or intensity) and / or provide manipulation signals to the respective object locations. For example, a photonic component is associated with each object location 5 such that the photonic component is part of an optical path to provide a respective manipulation signal to the respective object location to cause one or more quantum objects located at the respective object location to perform a respective function.

[0090] In various embodiments, photonic platform 215 comprises photonic platform substrate 220. In various embodiments, photonic platform substrate 220 is transparent to light and / or electromagnetic signals characterized by wavelengths within a particular wavelength range. In various embodiments, the manipulation signals provided to each object location are characterized by wavelengths within a particular wavelength range. For example, photonic platform substrate 220 is transparent to the manipulation signals in various embodiments. In various embodiments, one or more waveguides, waveguide layers 224, and / or clad photonic components 228 are formed in photonic platform substrate 220. Cladding layers 230 (e.g., 230A, 230B) may then be deposited and / or formed on one or more waveguides, waveguide layers 224, and / or clad photonic components 228 to cover the one or more waveguides, waveguide layers 224, and / or clad photonic components 228. In various embodiments, several alternating layers of waveguides, waveguide layers 224, and / or clad photonic components 228 and corresponding cladding layers 230 may be sequentially formed on photonic platform substrate 220 to form component integration platform substrate 235. In various embodiments, cladding layers 230 and photonic platform substrate 220 are formed from the same material and / or materials having similar optical properties (e.g., similar refractive indices, absorption coefficients, and / or transmission coefficients for operating signals characterized by wavelengths within a particular wavelength range).

[0091] For example, in the illustrated embodiment, a plurality of clad photonic components 228 are formed on a first surface 231 of the photonic platform substrate 220. The first surface 231 of the photonic platform substrate 220 is configured, in the illustrated embodiment, to be against the confinement device substrate 205. A first clad layer 230A is then deposited and / or formed on the first surface 231 of the photonic platform substrate 220 and the clad photonic components 228 formed thereon. A waveguide layer 224 is formed on the first clad layer 230A, and a second clad layer 230B is formed on the waveguide layer 224. Various layers of waveguides and / or other photonic components (e.g., planar optics, guided mode photonics, micromachined lenses) and corresponding clad layers may be formed on the first surface 231 of the photonic platform substrate 220 as appropriate for the application to form a component integration platform substrate 235.

[0092] In various embodiments, photonic platform substrate 220 and / or cladding layer 230 include glass, sapphire, or fused silica. In various embodiments, various other materials may be used to form photonic platform substrate 220 and / or cladding layer 230, as appropriate for the application. For example, photonic platform substrate 220 and / or cladding layer 230 may include silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, tantalum pentoxide, hafnia, silicon carbide, or the like.

[0093] In various embodiments, cladding photonic components 228, waveguides, and / or waveguide layers 224 are configured to direct respective manipulation signals to respective object locations 5 defined by confinement device 210. In various embodiments, cladding photonic components 228, waveguides, and / or waveguide layers 224 are configured to control parameters (e.g., wavelength, focus, polarization, phase, propagation direction, and / or intensity) of respective manipulation signals provided to respective object locations 5.

[0094] In various embodiments, clad photonic components 228, waveguides, waveguide layers 224, and cladding layers are formed on the second surface 223 of photonic platform substrate 220 to form component integration platform substrate 235 (e.g., rather than first surface 231). In various embodiments, each clad photonic component 228, waveguide, waveguide layer 224, and cladding layer is formed on both the first surface 231 and the second surface 223 of photonic platform substrate 220 to form component integration platform substrate 235.

[0095] In various embodiments, an anti-reflective coating 226B is applied to the first surface 225 of the component integration platform substrate 235. For example, the anti-reflective coating 226B may be applied, formed, and / or deposited on the first surface 225 of the component integration platform substrate 235. In various embodiments, the anti-reflective coating 226B is processed to minimize and / or reduce reflection of light from the first surface 225. For example, the anti-reflective coating 226B is configured, processed, and / or designed to increase and / or maximize the transmission coefficient through the first surface 225. In various embodiments, the first surface 225 of the component integration platform substrate 235 is configured to face away from the confinement device substrate 205.

[0096] In various embodiments, exposed photonic components 229 are disposed on the first surface 225 of the component integration platform substrate 235. For example, the exposed photonic components 229 are formed on an anti-reflective coating 226B in one example embodiment. In various embodiments, the exposed photonic components 229 include one or more of planar optics (e.g., metasurfaces, DOEs), guided-mode photonics (e.g., waveguides), micromachined lenses, and / or the like. For example, in various embodiments, the exposed photonic components comprise DOEs, passive metasurfaces, active metasurfaces, optical modulators, low-loss waveguides, amplifiers, on-chip lasers, photodetectors, grating couplers, beam splitters, edge couplers, optical local oscillators, tapers, reference cavities, optical sinks, optical absorbing structures, optical interconnect elements, resonant structures, and / or the like. For example, in various embodiments, the exposed photonic components 229 include one or more metasurfaces, metasurface arrays, one or more lenses, lenslet arrays, and / or the like. In one example embodiment, exposed photonic component 229 is configured to couple a steering signal to photonic platform 215 .

[0097] Second surface 223 of photonic platform substrate 220 and / or component integration platform substrate 235 is configured to face confinement device substrate 205. In various embodiments, conductive layer 222 is disposed, deposited, and / or formed on second surface 223 of photonic platform substrate 220 and / or component integration platform substrate 235. In various embodiments, conductive layer 222 comprises a conductive material. In various embodiments, conductive layer 222 is configured to be held at a constant potential. For example, conductive layer 222 may be in electrical communication with a ground and / or a voltage source configured to hold conductive layer 222 at a constant potential.

[0098] In various embodiments, at least one or more sections of the conductive layer 222 are transparent to electromagnetic radiation characterized by wavelengths within a particular wavelength range. In various embodiments, the conductive layer 222 is a transparent conductive film and / or layer. For example, the conductive layer 222 may be formed from indium tin oxide (ITO) or another transparent conductive material. In various embodiments, the conductive layer 222 includes one or more transparent sections 232. For example, the conductive layer 222 may be formed from a non-transparent conductive material. The one or more transparent sections 232 may be windows opened in the non-transparent conductive material (e.g., via etching of the non-transparent conductive material, mask or lithographic deposition, and / or other). In various embodiments, the one or more transparent sections 232 are empty openings in the conductive material of the conductive layer 222 formed from a transparent conductive material.

[0099] In various embodiments, the confinement-device-facing surface 221 (and / or a portion thereof) of the conductive layer 222 has anti-reflective properties. In various embodiments, an anti-reflective coating 226A is applied, deposited, and / or disposed on the confinement-device-facing surface 221 of the conductive layer 222. In various embodiments, the anti-reflective coating 226A is processed to minimize and / or reduce reflection of light from the confinement-device-facing surface 221. For example, the anti-reflective coating 226A is configured, processed, and / or designed to increase and / or maximize the transmission coefficient through the confinement-device-facing surface 221. In various embodiments, the confinement-device-facing surface 221 is configured to face the confinement-device substrate 205.

[0100] In various embodiments, conductive layer 222 comprises a plurality of patterned electrodes. For example, in one example embodiment, conductive layer 222 comprises a plurality of patterned electrodes configured to form a confinement device. For example, conductive layer 222 may comprise a plurality of patterned electrodes configured to form a secondary confinement device that is separate (or nearly separate) from confinement device 210 formed on confinement device substrate 205. For example, conductive layer 222 may comprise a plurality of patterned electrodes configured to cooperate with electrode components 212 formed on confinement device substrate 205 to form a three-dimensional (3D) confinement device.

[0101] Photonic components (e.g., clad photonic components 228, exposed photonic components 229, and / or other photonic components) of photonic platform 215 are configured to provide various manipulation signals to each object location 5 defined at least in part by confinement device 210. Figure 2 illustrates two example strategies for providing various manipulation signals to each object location 5.

[0102] For example, two manipulation signals are provided such that they are coaxially counter-propagating when incident on the first object position 5A during the overlapping time period. The first manipulation signal 281 and the second manipulation signal 282 are provided during the overlapping time period such that the first manipulation signal 281 and the second manipulation signal 282 are both incident on the first object position 5A during a particular time window. For example, the first manipulation signal 281 is provided to the photonic platform 215 such that the first manipulation signal 281 is adjusted (e.g., one or more parameters thereof are controlled) by the exposed photonic component 229 and the first clad photonic component 228A. The first manipulation signal 281 is then reflected and / or further adjusted by the first optical component 214A. The second manipulation signal 282 is provided to the photonic platform 215 such that the second manipulation signal 282 is adjusted (e.g., one or more parameters thereof are controlled) by the exposed photonic component 229 and the second clad photonic component 228B. The first actuation signal 281 and the second actuation signal 282 pass through the first object position 5A such that the first actuation signal 281 and the second actuation signal are coaxial but counter-propagating. In various embodiments, such a configuration may be used to perform two-qubit gates and / or other quantum logic operations at the first object position 5A. For example, the coaxial counter-propagating (reflected) first actuation signal 281 and the second actuation signal 282 may be used to perform two-qubit gates and / or other quantum logic operations at the first object position 5A.

[0103] In another example, at a second object position 5B, the third manipulation signal 283 and the fourth manipulation signal 284 are provided along a common optical path to provide coaxial counter-propagating manipulation signals at the second object position 5B. The third manipulation signal 283 and the fourth manipulation signal 284 are provided during overlapping time periods such that the third manipulation signal 283 and the fourth manipulation signal 284 are both incident on the second object position 5B during a particular time window. For example, the third manipulation signal 283 and the fourth manipulation signal 284 are both provided to the photonic platform 215 such that the third manipulation signal 283 and the fourth manipulation signal 284 are modulated (e.g., one or more parameters thereof are controlled) by the exposed photonic element 229 and the third clad photonic element 228C. The third manipulation signal 283 and the fourth manipulation signal 284 are reflected and / or further modulated by the second optical element 214B. The reflected third actuation signal 283 and the reflected fourth actuation signal 284 pass back through the second object position 5B to provide coaxial counter-propagating actuation signals (e.g., the third actuation signal 283 interacts with the reflected fourth actuation signal, and the fourth actuation signal 284 interacts with the reflected third actuation signal). For example, in one example embodiment, the second optical component 214B is a retroreflector. In various embodiments, such a configuration may be used to perform two-qubit gates and / or other quantum logic operations at the second object position 5B. For example, the coaxial counter-propagating third actuation signal and the reflected fourth actuation signal and the coaxial counter-propagating reflected third actuation signal and the fourth actuation signal may be used to perform two-qubit gates and / or other quantum logic operations at the second object position 5B. In an example embodiment, when second optical component 214B is a retroreflector, the coaxial counter-propagating third and reflected fourth steering signals and the coaxial counter-propagating reflected third and fourth steering signals generate a phase-stable interference pattern.

[0104] In various embodiments, composite confinement device assembly 200 further includes an optical sink. For example, photonic platform 215 may include one or more photonic platform sinks configured to act as an optical sink. In another example, confinement device substrate 205 includes one or more device substrate sinks configured to act as an optical sink. For example, optical sinks of composite confinement device assembly 200 are configured to enable and / or facilitate the removal of photons from and / or allow the escape of photons from confinement device volume 206 disposed between photonic platform 215 and confinement device substrate 205.

[0105] For example, one or more optical sinks of composite confinement device assembly 200 are configured to reduce unwanted photons (e.g., scattered photons that are no longer part of the manipulation signal) from confinement device volume 206 between the quantum object confinement device and the photonic platform to reduce unwanted illumination of one or more non-target quantum objects located between the quantum object confinement device and the photonic platform.

[0106] In various embodiments, the photonic platform 215 is secured to the confinement device substrate 205 via one or more spacing structures 202. In various embodiments, the spacing structures 202 are pillars of solid material. For example, the spacing structures 202 are formed in various embodiments by etching portions of a spacer wafer. For example, a spacer wafer bonded to the photonic platform substrate 220 may be etched to form the open space of the confinement device volume 206 and the spacing structures 202.

[0107] In various embodiments, spacing structure 202 is and / or comprises an actuator. For example, spacing structure 202 may be an actuator operable to adjust the relative positioning between photonic platform 215 and confinement device substrate 205. In an example embodiment, each actuator is coupled to a respective motor configured to control actuation of the respective actuator. In an example embodiment, each actuator comprises one or more piezoelectric actuators. The piezoelectric actuators are configured to adjust the distance between photonic platform 215 and confinement device substrate 205 and / or adjust one or more angles between device plane 208 and platform plane 218. For example, a nanopositioner may be used to perform dynamic alignment between photonic platform 215 and confinement device substrate 205.

[0108] In one example embodiment, the photonic platform 215 and the confinement device substrate 205 are secured to one another via a nanopositioner mount arrangement. For example, a nanopositioning system such as a nanopositioner mount arrangement may be used to secure the photonic platform 215 to the confinement device substrate 205 in an adjustable manner.

[0109] 3A and 3B illustrate example embodiments in which a composite containment device assembly 200 includes various types of light sinks.

[0110] 3A illustrates a portion of a composite confinement device assembly 200 in which the photonic platform includes one or more photonic platform sinks, including platform absorbing sink 320A, and the confinement device substrate 205 includes one or more device substrate sinks, including device absorbing sink 320B. For example, in various embodiments, one or more optical sinks (e.g., photonic platform sink and / or device substrate sink) are absorbing optical sinks configured to absorb and / or significantly attenuate light incident thereon. For example, the absorbing optical sink comprises a photon absorber. In example embodiments, the photon absorber is positioned on a surface of the quantum object confinement device or photonic platform and / or is at least partially embedded within confinement device substrate 205 or photonic platform substrate 220. For example, the absorbing optical sink is configured to absorb and / or attenuate light characterized by wavelengths within a particular wavelength range (e.g., a particular wavelength range over which photonic platform substrate 220 is transparent) or a wavelength range including the particular wavelength range. For example, an absorbing light sink may be a metal or non-transparent material deposition, nanotube array, and / or other structure configured to absorb and / or attenuate light characterized by wavelengths within a particular wavelength range.

[0111] 3B illustrates a portion of a composite confinement device assembly 200 in which the photonic platform includes one or more photonic platform sinks, including platform hole sink 330A, and the confinement device substrate 205 includes one or more device substrate sinks, including device hole sink 330B. For example, in various embodiments, the one or more light sinks (e.g., photonic platform sink and / or device substrate sink) are holes in and / or through the respective platform / substrate that are configured and / or positioned to allow light to exit the confinement device volume 206 between the confinement device substrate 205 and the photonic platform 215 by passing through the respective holes. In various embodiments, the holes in and / or through the respective platform / substrate may include through-holes, depressions / indentations, or grooves in the surface of the respective platform / substrate. For example, the holes may be areas or volumes within the respective platform / substrate that are voids and / or material-free regions. In another example, hole sinks 330 are transparent windows (e.g., in one example embodiment, conductive transparent windows, formed, for example, from ITO) configured and / or positioned to allow light to exit confinement device volume 206 by passing through the respective window into openings and / or voids in the respective platform / substrate or into the material of the respective platform / substrate. For example, for the illustrated platform hole sink 330A, the hole sinks may be positioned and shaped to allow light to directly exit confinement device volume 206 between confinement device substrate 205 and photonic platform 215. In another example, for the illustrated device hole sink 330B, the hole sinks may be positioned and shaped to cause light exiting confinement device volume 206 via the hole to reflect from hole surface 332. Hole surface 332, in one example embodiment, is configured to partially attenuate light reflecting therefrom.In another example embodiment, the hole surface 332 is configured to efficiently reflect light reflected therefrom so that heating of the respective substrate by light exiting the hole sink is minimized.

[0112] Another example light sink that may be disposed on and / or in the confinement device substrate 205 and / or photonic platform 215 is a high light transmittance engineered film 340, as illustrated in Figure 3A. In one example embodiment, the engineered film 340 is an anti-reflective film 226A. In another example embodiment, the engineered film 340 is an additional coating configured to transmit light in a particular wavelength range through the respective substrate surface with high efficiency and / or minimal reflection.

[0113] In various embodiments, composite confinement device assembly 200 includes multiple types of optical sinks configured to reduce unwanted photons in confinement device volume 206. For example, in one example embodiment, one or more optical sinks of composite confinement device assembly 200 include one or more of: a hole sink configured to pass at least a first portion of the unwanted photons in the confinement device volume through a respective one of photonic platforms 215 or confinement device substrates 205; an engineered membrane on a surface of a respective one of photonic platforms 215 or confinement device substrates 205 that is configured to have high optical transmittance and to transmit at least a second portion of the unwanted photons in the confinement device volume through that surface; and a photon absorber disposed on and / or in a respective one of photonic platforms 215 or confinement device substrates 205 that is configured to absorb at least a third portion of the unwanted photons in the confinement device volume. In various embodiments, the portion of unwanted photons may refer to any quantifiable percentage of unwanted photons. For example, the quantifiable percentage value may be any real number between 0 and 100.

[0114] In various embodiments, composite confinement device assembly 200 includes components configured to assist in the collection of light emitted by quantum objects disposed at respective object locations 5. For example, FIG. 4 illustrates a portion of example composite confinement device assembly 200 including optical component 214 configured as collection optics 420. In the illustrated example, collection optics 420 is configured to reflect light emitted by quantum objects disposed at object locations 5 back through object locations 5. The reflected light then enters photonic platform 215. One or more photonic components of photonic platform 215 may be configured to collimate and / or otherwise direct the reflected light toward collection system 430. For example, in the illustrated embodiment, exposed photonic component 229 is configured to collimate the reflected light and direct the reflected light toward collection system 430. In various embodiments, collection system 430 comprises a photodetector and lenses, optical fibers, waveguides, and / or the like configured to transport the reflected light to the photodetector. In one example embodiment, collection system 430 comprises a photon detector arranged and / or positioned so that the reflected light is incident upon it. In one example embodiment, the photodetector is a photodiode, a photomultiplier tube, a charge-coupled device (CCD) sensor, a complementary metal-oxide semiconductor (CMOS) sensor, a microelectromechanical system (MEMS) sensor, a modulator, and / or other photodetector capable of sensing light at the expected fluorescence wavelength of the quantum object that the composite confinement device assembly is configured to confine.

[0115] In various embodiments, the photonic platform includes one or more surface photonic components. Figures 5A, 5B, 5C, and 5D illustrate some example surface photonic components. As used herein, a surface photonic component is a photonic component formed on or in the surface 221 facing the confinement device. For example, the portion of the surface 221 facing the confinement device may not include an anti-reflective coating 226A and may be configured to reflect light incident thereon. In various embodiments, the surface photonic component is a mirror and / or other reflective component, a diffractive optical element, a metasurface, and / or the like.

[0116] For example, in various embodiments, surface photonic components formed on and / or in the confinement device-facing surface 221 and optical components 214 disposed on the confinement device substrate 205 may be used to define a cavity within which object positions 5 are located. For example, the cavity may be a Fabry-Perot resonator. In various embodiments, the cavity may be configured to accommodate and / or include more than one quantum object position therein.

[0117] 5A illustrates a portion of example composite confinement device assembly 200 that includes a cavity 510 formed between surface photonic component 512 and optical component 214. For example, surface photonic component 512 extends outward from confinement device-facing surface 221. Surface photonic component 512 includes a reflective surface 514 that is configured to redirect light incident thereon back toward optical component 214.

[0118] 5B illustrates a portion of example composite confinement device assembly 200 including a cavity 520 formed between a recessed surface photonic element 522 and optical element 214. For example, surface photonic element 522 is disposed in and / or formed by a concave portion of confinement device-facing surface 221. Surface photonic element 522 includes a reflective surface 524 configured to redirect light incident thereon back toward optical element 214.

[0119] 5C illustrates a portion of example composite confinement device assembly 200 that includes an off-axis cavity 530. For example, off-axis cavity 530 extends along a cavity axis 538 that is not parallel to a normal 536 to device plane 208 and / or platform plane 218. For example, surface photonic component 532 is disposed on and / or formed in confinement device-facing surface 221. Surface photonic component 532 includes a reflective surface 534 that is configured to redirect light incident thereon back toward optical component 214.

[0120] Exemplary cavities 510, 520, and 530 are each configured to have counter-propagating light therein, resulting in interference fringes within the respective cavities. In various embodiments, object locations 5 disposed within cavities 510, 520, 530 are located at nodes, antinodes, or between modes of the interference fringes, such that the counter-propagating light and / or interference fringes interact with quantum objects disposed at the object locations, causing the quantum objects to perform their respective functions, e.g., of a quantum computer.

[0121] 5D illustrates a portion of the example composite confinement device assembly 200 including a mirroring cavity 540. The mirroring cavity 540 is defined by two surface photonic elements 542A, 542B and an optical element 214 formed on and / or in the confinement device substrate 205. As illustrated, the mirroring cavity 540 does not contain counter-propagating light. However, a second beam may be provided into the mirroring cavity 540 such that counter-propagating light and corresponding interference fringes are present in the mirroring cavity 540. Each of the surface photonic elements 542A, 542B includes a respective reflective surface 544. The respective reflective surface 544 extends from or is embedded within the confinement device-facing surface 221.

[0122] 5E illustrates a portion of example composite confinement device assembly 200 including a bifocal mirroring cavity 550. Bifocal mirroring cavity 550 is defined by two surface photonic components 552A, 552B and optical components 214 formed on and / or in confinement device substrate 205. For example, bifocal mirroring cavity 550 is configured to have two foci. A first object position 5A is located at a first of the two foci, and a second object position 5B is located at a second of the two foci. A first quantum object disposed at first object position 5A and a second quantum object disposed at second object position 5B may be optically coupled and / or entangled within bifocal mirroring cavity 550. In various embodiments, a multifocal mirroring cavity includes three or more foci (e.g., three foci, four foci, and / or other).

[0123] As illustrated, the bifocal mirroring cavity 550 does not contain counter-propagating light. However, a second beam may be provided into the bifocal mirroring cavity 550 such that counter-propagating light and corresponding interference fringes are present in the bifocal mirroring cavity 550. Each of the surface photonic components 552A, 552B includes a respective reflective surface 554. The respective reflective surface 554 extends from or is embedded within the surface 221 facing the confinement device.

[0124] In various embodiments, composite confinement device assembly 200 may include one or more of cavities 510, 520, 530, 540, 550. For example, composite confinement device assembly 200 may include multiple cavities arranged according to respective object positions 5 and configured for performing various functions of a quantum computer that includes composite confinement device assembly 200.

[0125] In various embodiments, composite confinement device assembly 200 is and / or is part of an optically integrated confinement device system such as described by U.S. Application No. 63 / 378,124, filed October 3, 2022, the entire contents of which are incorporated herein by reference. For example, in one example embodiment, composite confinement device assembly may further include one or more bridge chips, confinement device substrate 205 may be a confinement device chip, and / or photonic platform 215 may be a delivery chip.

[0126] In various embodiments, composite confinement assembly 200 includes a loading opening 790 and / or a particle flux opening 792, as illustrated in FIG. 7E . For example, confinement device 210 may be configured to accept a flux of quantum objects via loading opening 790. In various embodiments, loading opening 790 is a through-hole through confinement device substrate 205. In various embodiments, particle flux opening 792 is configured to allow quantum objects not captured and / or confined by confinement device 210 to escape and / or exit confinement device volume 206. In an example embodiment, particle flux opening 792 and loading opening 790 define respective aperture axes that are aligned (e.g., collinear) with one another. In various embodiments, particle flux opening 792 is a through-hole through photonic platform 215 or, possibly, confinement device substrate 205.

[0127] In various embodiments, composite confinement assembly 200 includes a loading opening 793 in photonic platform 215, as illustrated in FIG. 7F. In various embodiments, confinement device 210 may be configured to accept quantum objects generated by quantum object source 791 via loading opening 793 in photonic platform 215. Loading opening 793 may be a through-hole through photonic platform 215. In various embodiments, photonic platform 215 may also include a particle flux opening (e.g., particle flux opening 792 as illustrated in FIG. 7E) configured to allow quantum objects not captured and / or confined by confinement device 210 to escape and / or exit confinement device volume 206.

[0128] In various embodiments, confinement device substrate 205 may also include a particle flux opening configured to allow quantum objects not captured and / or confined by confinement device 210 to escape and / or exit confinement device volume 206. In various embodiments, the particle flux opening may be a through-hole in photonic platform 215 (e.g., particle flux opening 792 as illustrated in FIG. 7E). For example, the particle flux opening may be a through-hole parallel to loading opening 793. In another example, the particle flux opening may not be parallel to the loading opening. In various embodiments, the particle flux opening may be a through-hole in confinement device substrate 205. In an example embodiment, the particle flux opening and the loading opening define respective aperture axes that are aligned (e.g., collinear) with one another.

[0129] 7F, a schematic diagram illustrating a composite confinement device assembly is provided in accordance with various embodiments of the present disclosure. The composite confinement device assembly may include quantum object confinement device 210 fabricated on confinement device substrate 205. The composite confinement device assembly may include photonic platform 215. Photonic platform 215 may include one or more photonic components hosted by a photonic platform substrate (e.g., photonic platform substrate 220 with reference to FIG. 2). Photonic platform 215 may include loading opening 793. Loading opening 793 may be configured to pass a quantum object through quantum object confinement device 210.

[0130] In various embodiments, photonic platform substrate 220 is mechanically coupled to confinement device substrate 205 to form a composite confinement device assembly. In various embodiments, quantum objects are generated by a source 791 outside the composite confinement device assembly and passed through a loading aperture 793 to quantum object confinement device 210 (e.g., as illustrated by the dashed arrow from source 791 to confinement device assembly 210 in FIG. 7F ).

[0131] In various embodiments, the loading opening comprises a through-hole through the photonic platform, which may include one or more photonic layers (e.g., various layers of photonic platform 215 illustrated in FIG. 7F), and the loading opening may extend through one or all of the photonic layers.

[0132] In various embodiments, the composite confinement device assembly comprises a confinement device volume 206 created by mechanically coupling a confinement device substrate and a photonic platform substrate.

[0133] In various embodiments, the composite confinement device assembly includes a particle flux opening configured to pass quantum objects that exit the confinement device volume without being captured and / or confined by the confinement device.

[0134] In various embodiments, the particle flux opening may include a through-hole through the photonic platform (e.g., see FIG. 7E, bundle opening 792). In various embodiments, the particle flux opening is parallel to the loading opening. In various embodiments, the particle flux opening is not parallel to the loading opening.

[0135] In various embodiments, the particle flux opening comprises a through-hole through the containment device. In various embodiments, the particle flux opening may be collinear with the loading opening. In various embodiments, the particle flux opening may be non-collinear with the loading opening.

[0136] Exemplary Method for Fabricating a Composite Containment Device Assembly 6 provides a flowchart illustrating an example method for fabricating composite confinement device assembly 200, according to an example embodiment. Beginning at step 602, in an example embodiment, an etch stop layer is deposited on a surface of a photonic platform substrate. For example, a photonic substrate may be provided, and an etch stop material may be deposited on its surface to form the etch stop layer. In an example embodiment, the etch stop layer is deposited on an unpatterned photonic platform substrate (e.g., a photonic platform substrate that does not yet have photonic components formed thereon). In an example embodiment, one or more photonic platform substrates are formed on and / or in the photonic platform substrate before the etch stop layer is deposited thereon.

[0137] In step 604, a spacer wafer is bonded to the photonic platform substrate. For example, the spacer wafer may be bonded to the photonic platform substrate such that an etch stop layer is disposed between the spacer wafer and the photonic platform substrate. For example, the spacer wafer may be a silicon (Si) handle or other handle substrate bonded to the photonic platform substrate, the handle or handle substrate including a material that is semi-transparent with respect to light in a particular wavelength range. In example embodiments, the spacer wafer may include silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, tantalum pentoxide, hafnia, or silicon carbide. For example, the materials for the spacer wafer and the photonic platform substrate may be selected such that both the photonic platform and the spacer are optically transparent.

[0138] In one example embodiment, the thickness of the spacer wafer in a direction perpendicular to the surface of the spacer wafer that is bonded to the photonic platform substrate corresponds to the desired set distance h between the photonic platform 215 and the confinement device substrate 205. For example, the thickness of the spacer wafer and any present etch stop layer, in one example embodiment, is equal to the desired set distance h. In another example embodiment, the spacer wafer is thinned after it is bonded to the photonic platform substrate such that the thickness of the spacer wafer and any present etch stop layer, in one example embodiment, is equal to the desired set distance h.

[0139] FIG. 7A illustrates an example of an unpatterned photonic platform substrate 705 onto which an etch stop layer 715 has been deposited and a spacer wafer 720 has been bonded such that the etch stop layer 715 is disposed between the unpatterned photonic platform substrate 705 and the spacer wafer 720.

[0140] Continuing with Figure 6, in step 606, alignment marks are patterned into the unpatterned photonic platform substrate 705 and / or spacer wafer 720. In an example embodiment, the alignment marks are patterned using lithography, masks, or other placement-controlled deposition and / or patterning of one or more surfaces of the photonic platform substrate 705 and / or spacer wafer 720.

[0141] In step 608, one or more clad photonic components 228 are fabricated on and / or in the photonic platform substrate 705. One or more clad layers 230 may be deposited. For example, one or more clad photonic components 228 may be fabricated on an exposed surface of the photonic platform substrate 705. One or more clad layers 230 may then be deposited thereon to cover the clad photonic components 228 (e.g., embed the photonic components within the cladding). In various embodiments, the clad photonic components 228 may include waveguides and / or waveguide layers 224 in addition to optical sinks, reflective and / or diffractive optics, metasurfaces, and / or the like. In an example embodiment, fabrication of photonic components and clad layers may be alternated to fabricate the photonic platform 215 comprising multiple layers of clad photonic components 228. In various embodiments, a smoothing or polishing step (e.g., mechanical and / or chemical polishing) may be performed after deposition of each clad layer.

[0142] 7B illustrates the result of performing step 608, where clad photonic component 228, including waveguide layer 224, and cladding layer 230 are formed on photonic platform substrate 705. For example, clad photonic component 228 (including waveguide layer 224) and cladding layer 230 are formed on unpatterned photonic platform substrate 705 to produce component integration platform substrate 235. Alignment marks 730 are patterned into component integration platform substrate 235.

[0143] Continuing with FIG. 6 , in step 610, an anti-reflective coating 226B is deposited and / or applied to the first surface 225 of the component integration platform substrate 235. For example, the anti-reflective coating 226B may be applied, formed, and / or deposited on the first surface 225 of the component integration platform substrate 235. In various embodiments, the anti-reflective coating 226B is processed to minimize and / or reduce reflection of light from the first surface 225. For example, the anti-reflective coating 226B is configured, processed, and / or designed to increase and / or maximize the transmission coefficient through the first surface 225. In various embodiments, the first surface 225 of the component integration platform substrate 235 is configured to face away from the confinement device substrate 205.

[0144] In step 612, exposed photonic components 229 are fabricated on anti-reflective coating 226B. For example, one or more exposed photonic components 229 may be fabricated, formed, and / or mounted on anti-reflective coating 226B and / or first surface 225 of component integration platform substrate 235. In various embodiments, exposed photonic components 229 include one or more metasurfaces, metasurface arrays, one or more lenses, lenslet arrays, and / or the like. In an example embodiment, exposed photonic components 229 are configured to couple manipulation signals to photonic platform 215 (e.g., direct manipulation signals to respective cladding photonic components 228). In an example embodiment, one or more of exposed photonic components 229 are configured to collimate light emitted by quantum objects positioned at respective object locations and / or otherwise direct light emitted by the quantum objects toward collection system 430.

[0145] FIG. 7C illustrates the result of depositing and / or applying an anti-reflective coating 226B to a component integration platform substrate 235 and fabricating exposed photonic components 229 thereon.

[0146] 6 , in step 614, spacer wafer 720 is etched to form spacing structures 202. For example, a portion of spacer wafer 720 is etched down to etch stop layer 715 (if present) or second surface 223 of photonic platform substrate 220. In various embodiments, the etching is appropriate to the material of spacer wafer 720. For example, spacer wafer 720 is etched and what remains of the spacer wafer is spacing structures 202.

[0147] In step 616, in an example embodiment, etch stop layer 715 is removed. For example, if etch stop layer 715 is present, etch stop layer 715 is removed to expose second surface 223 of photonic platform substrate 220 and / or component integration platform substrate 235.

[0148] At step 618, in an example embodiment, one or more surface photonic components (e.g., 512, 522, 532, 542, 552) are formed on the second surface 223 of the photonic platform substrate 220 and / or component integration platform substrate 235. In an example embodiment, the one or more surface photonic components are formed through appropriate deposition and / or etching steps. For example, for surface photonic components that extend outward from the second surface 223, material is deposited on the second surface and then patterned to form and / or shape the desired surface photonic component reflective surface (e.g., 514, 534, 544, 554). In another example, for surface photonic components that are recessed into the second surface, corresponding portions of the second surface are patterned, etched, and / or shaped to form the desired surface photonic component reflective surface (e.g., 524).

[0149] In an example embodiment, a reflective coating is applied to the surface photonic element reflective surfaces 514, 524, 534, 544, 554. In an example embodiment, one or more photonic surface photonic elements are formed after deposition of the conductive layer 222 on the second surface 223 and / or after deposition of the anti-reflective coating 226A on the confinement device-facing surface 221 of the conductive layer 222. In an example embodiment, the anti-reflective coating 226A and / or the conductive layer 222 are removed at the locations where the photonic surface elements will be formed, and then the photonic surface elements are formed at the locations where the anti-reflective coating 226A and / or the conductive layer 222 were removed.

[0150] In step 620, a conductive layer 222 is deposited on the second surface 223 of the photonic platform substrate 220 and / or the component integration platform substrate 235. For example, the conductive layer may be conductive and transparent to light characterized by wavelengths within a particular wavelength range, or may comprise a conductive window that is transparent to light characterized by wavelengths within a particular wavelength range. In an example embodiment, the conductive layer 222 is deposited on the second surface 223 of the photonic platform substrate 220 and / or the component integration platform substrate 235 and on one or more surfaces of the spacing structure 202. For example, in an example embodiment, the surface of the spacing structure facing the space that will be the confinement device volume 206 may have the conductive layer 222 deposited thereon. In various embodiments, the conductive layer 222 is configured to be grounded and / or held at a constant potential.

[0151] In an example embodiment, conductive layer 222 has anti-reflective properties. In an example embodiment, an anti-reflective coating 226A is deposited and / or applied to confinement device-facing surface 221. For example, anti-reflective coating 226A may be applied, formed, and / or deposited on conductive layer 222 and / or confinement device-facing surface 221 of component integration platform substrate 235. In various embodiments, anti-reflective coating 226A is engineered to minimize and / or reduce reflection of light from confinement device-facing surface 221. For example, anti-reflective coating 226A is configured, engineered, and / or designed to increase and / or maximize the transmission coefficient through confinement device-facing surface 221. In various embodiments, conductive layer 222 and / or confinement device-facing surface 221 of component integration platform substrate 235 are configured to face confinement device substrate 205. In an example embodiment, anti-reflective coating 226A is also deposited on one or more surfaces of spacing structure 202 (eg, the surfaces of the spacing structure facing towards what will be confinement device volume 206).

[0152] In one example embodiment, the anti-reflective coating 226A is not deposited (eg, using a masking process) or is removed in locations where the reflective surfaces 514, 524, 534, 544, 554 are or will be located.

[0153] FIG. 7D illustrates a photonic platform 215. For example, FIG. 7D illustrates the result of performing step 620. As shown in FIG. 7D, the photonic platform 215 comprises a photonic platform substrate 220, a cladding layer 230, and a component integration platform substrate 235 including a clad photonic component 228 including a waveguide layer 224. The photonic platform 215 includes an anti-reflective coating 226B on a first surface 225 of the component integration platform substrate 235 and an exposed photonic component 229 formed thereon. The photonic platform 215 further includes a conductive layer 222 formed on a second surface of the component integration platform substrate 235 and an anti-reflective coating 226A applied to its surface 221 facing the confinement device. The photonic platform 215 has a plurality of spacing structures 202 mechanically fixed thereto. The photonic platform 215 and / or the spacing structures 202 have alignment marks 730 disposed and / or patterned thereon.

[0154] Confinement device 210 is formed in confinement device substrate 205 before, during, or after fabrication of photonic platform 215. In various embodiments, one or more optical components 214 are formed on and / or in confinement device substrate 205. In various embodiments, alignment marks 735 are formed and / or patterned on confinement device substrate 205, as illustrated in FIG. 7E . In various embodiments, alignment marks 735 formed and / or patterned on confinement device substrate 205 correspond to alignment marks 730 formed and / or patterned on spacing structure 202 and / or photonic platform 215. For example, alignment marks 735 indicate the location of respective bonding locations on the confinement device substrate to which spacing structure 202 will be secured, bonded, and / or coupled.

[0155] In step 622, the photonic platform 215 is secured to the confinement device substrate 205 to form the composite confinement device assembly 200. For example, alignment marks 730 on the photonic platform 215 and / or spacing structure 202 are aligned with corresponding alignment marks 735 on the confinement device substrate 205. The spacing structure 202 is then bonded and / or mechanically coupled to the confinement device substrate 205 with the alignment marks 735 aligned with their respective corresponding alignment marks 730.

[0156] Technical Advantages Conventionally, laser beams are provided to locations within an ion trap through the use of external lasers and free-space optics configured to provide the laser beam to specific locations within the ion trap. However, the amount of space required for such beam paths is significant (e.g., several square meters) even to provide a laser beam to a relatively small number of defined locations within the ion trap. Additionally, the precision with which a laser beam can be provided to locations within the ion trap through such conventional means may limit the density of defined locations in the ion trap. Furthermore, ion traps are typically utilized within cryogenic and / or vacuum chambers. As such, the laser beam must pass through the cryogenic and / or vacuum chamber and any radiation and / or thermal shielding therein. Thus, technical challenges exist regarding how to provide operating signals to quantum object confinement devices that are efficient and can be accurately scaled to the size and / or dimensions of the quantum object confinement device. These technical challenges are exacerbated as the size of quantum object confinement devices is scaled up (e.g., as the number of locations or object positions defined for the quantum object confinement device increases).

[0157] Various embodiments provide technical solutions to these technical problems. In particular, in various embodiments, optical elements of the signal management system are incorporated and / or integrated into a composite confinement device assembly. For example, one or more optical elements of the signal management system are disposed within a cryogenic and / or vacuum chamber. For example, one or more optical elements of the signal management system include photonic components that are part of a photonic platform that is coupled and / or fixed relative to the confinement device and / or the confinement device substrate. In some embodiments, one or more optical elements of the signal management system include optical components disposed on the confinement device substrate. These one or more optical elements include passive and / or active optical elements configured to control various parameters of respective manipulation signals and precisely direct the respective manipulation signals to respective object locations. In various embodiments, the one or more optical elements include active optical elements including photodetectors, such as photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal-oxide semiconductor (CMOS) sensors, microelectromechanical systems (MEMS) sensors, modulators, and / or other photodetectors. In various embodiments, the use of a photonics platform reduces the space requirements for free-space optics beam path configurations, the number of cryogenic and / or vacuum chamber pass-throughs, and / or other factors. Furthermore, the configuration of the composite confinement device assembly of various embodiments reduces the technical problem of adding a signal management system for larger confinement devices. For example, the photonics platform is scalable with the confinement device such that the signal management system is configurable to accommodate different numbers and / or arrangements / layouts of object locations. Thus, various embodiments provide a technical solution to the technical problem of how to provide manipulation signals to object locations such that the manipulation signals are efficiently and effectively provided to the object locations even when an array of object locations defined at least in part by the confinement device forms a two- or three-dimensional array.

[0158] Illustrative Controller In various embodiments, composite confinement device assembly 200 is incorporated into a system (e.g., quantum computer 110) that includes controller 30. In various embodiments, controller 30 is configured to control various elements of the system (e.g., quantum computer 110). For example, controller 30 may be configured to control voltage source 50, a cryogenic and / or vacuum system that controls the temperature and pressure within cryogenic and / or vacuum chamber 40, operation source 300, a refrigeration system, and / or other systems that control environmental conditions (e.g., temperature, humidity, pressure, and / or other) within cryogenic and / or vacuum chamber 40, and / or to operate and / or effect the controlled evolution of the quantum state of one or more quantum objects confined by confinement device 210 of composite confinement device assembly 200. In various embodiments, controller 30 may be configured to receive signals from one or more photodetectors (e.g., collection system 430 and / or other), calibration sensors, and / or other.

[0159] As illustrated in FIG. 8 , in various embodiments, controller 30 may comprise various controller elements, including a processing element 805, a memory 810, a driver controller element 815, a communication interface 820, an analog-to-digital (A / D) converter element 825, and / or others. For example, processing element 805 may comprise a programmable logic device (CPLD), a microprocessor, a coprocessing entity, an application-specific instruction set processor (ASIP), an integrated circuit, an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a programmable logic array (PLA), a hardware accelerator, other processing devices and / or circuitry, and / or others, and / or controllers. The term circuitry may refer to an entirely hardware embodiment or a combination of hardware and a computer program product. In one example embodiment, processing element 805 of controller 30 comprises and / or is in communication with a clock.

[0160] For example, memory 810 may be comprised of non-transitory memory, such as volatile and / or non-volatile memory storage, such as one or more of a hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, and / or others. In various embodiments, memory 810 may store a queue of commands to be executed (e.g., an executable queue) to cause quantum algorithms and / or circuits to run, qubit records corresponding to qubits in a quantum computer (e.g., in a qubit record data store, qubit record database, qubit record table, and / or other), calibration tables, computer program code (e.g., in one or more computer languages, dedicated controller languages, and / or other), and / or other. In one example embodiment, execution of at least a portion of the computer program code stored in memory 810 (e.g., by processing element 805) causes controller 30 to perform one or more steps, operations, processes, procedures and / or the like described herein to provide operational signals to quantum object locations and / or collect, detect, capture and / or measure indicia of emission signals emitted by quantum objects located at corresponding object locations 5 of composite confinement device assembly 200.

[0161] In various embodiments, driver controller element 815 may include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, driver controller element 815 may comprise a driver and / or a driver controller. For example, a driver controller may be configured to operate one or more corresponding drivers according to executable instructions, commands, and / or the like scheduled and executed by controller 30 (e.g., by processing element 805). In various embodiments, driver controller element 815 may enable controller 30 to operate voltage source 50, manipulation source 300, a cooling system, and / or the like. In various embodiments, a driver may be a laser driver configured to operate one or more manipulation sources 300 to generate manipulation signals, a vacuum component driver, a driver for controlling the flow of current and / or voltage applied to electrodes used to maintain and / or control the trapping potential of composite confinement device assembly 200 (and / or other driver for providing driver action sequences to potential-generating elements of the optical-integrated confinement device), a cryogenic and / or vacuum system component driver, a cooling system driver, and / or the like. In various embodiments, the controller 30 comprises means for communicating and / or receiving signals from one or more optical receiver components (e.g., optical detectors or collection system 430). For example, the controller 30 may comprise one or more analog-to-digital converter elements 825 configured to receive signals from one or more optical receiver components (e.g., optical detectors of an optical collection system), calibration sensors, and / or the like.

[0162] In various embodiments, controller 30 may comprise a communications interface 820 for interfacing and / or communicating with computational entity 10. For example, controller 30 may comprise a communications interface 820 for receiving executable instructions, command sets, and / or the like from computational entity 10, and for providing to computational entity 10 outputs and / or results of processing the outputs received from quantum computer 110 (e.g., from a light-collecting system). In various embodiments, computational entity 10 and controller 30 may communicate via a direct wired and / or wireless connection and / or via one or more wired and / or wireless networks 20.

[0163] Illustrative Computational Entities 9 provides an exemplary schematic diagram depicting an example computational entity 10 that can be used in conjunction with embodiments of the present invention. In various embodiments, computational entity 10 is configured to enable a user to provide input to quantum computer 110 (e.g., via a user interface of computational entity 10) and receive, display, analyze, and / or otherwise process output from quantum computer 110.

[0164] 9 , the computing entity 10 may include an antenna 912, a transmitter 904 (e.g., wireless), a receiver 906 (e.g., wireless), and a processing element 908 that respectively provides signals to the transmitter 904 and receives signals from the receiver 906. The signals respectively provided to the transmitter 904 and received from the receiver 906 may include signal information / data according to an air interface standard of an applicable wireless system for communicating with various entities, such as the controller 30, other computing entities 10, and / or others. In this regard, the computing entity 10 may be capable of operating with one or more air interface standards, communication protocols, modulation types, and access types. For example, the computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as Fiber Distributed Data Interface (FDDI), Digital Subscriber Line (DSL), Ethernet, Asynchronous Transfer Mode (ATM), Frame Relay, Data Over Cable Service Interface Specification (DOCSIS), or any other wired transmission protocol.Similarly, the computing entity 10 may be configured to support General Packet Radio Service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 The mobile station may be configured to communicate over a wireless external communications network using any of a variety of protocols, such as 1X (1xRTT), Wideband Code Division Multiple Access (WCDMA), Global System for Mobile Communications (GSM), Enhanced Data Rates for GSM Evolution (EDGE), Time Division Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution Data Optimized (EVDO), High Speed ​​Packet Access (HSPA), High Speed ​​Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), Ultra Wideband (UWB), Infrared (IR) protocol, Near Field Communication (NFC) protocol, Wibree, Bluetooth protocol, Wireless Universal Serial Bus (USB) protocol, and / or any other wireless protocol. Computing entity 10 may communicate using such protocols and standards, including Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), Hypertext Markup Language (HTML), and / or others.

[0165] Through these communication standards and protocols, computing entity 10 can communicate with various other entities using concepts such as Unstructured Supplementary Service Information / Data (USSD), Short Message Service (SMS), Multimedia Message Service (MMS), Dual Tone Multifrequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM Dialer). Computing entity 10 can also download, for example, changes, add-ons, and updates to its firmware, software (including, for example, executable instructions, applications, program modules), and operating system.

[0166] In various embodiments, computational entity 10 may comprise a network interface 920 for interfacing and / or communicating with, for example, controller 30. For example, computational entity 10 may comprise a network interface 920 for providing executable instructions, command sets, and / or the like for receipt by controller 30 and / or for receiving outputs provided by quantum computer 110 and / or results of processing the outputs. In various embodiments, computational entity 10 and controller 30 may communicate via a direct wired and / or wireless connection and / or via one or more wired and / or wireless networks 20.

[0167] Computing entity 10 may also include user interface devices comprising one or more user input / output interfaces (e.g., a display 916 and / or speakers / speaker drivers coupled to processing element 908, as well as a touchscreen, keyboard, mouse, and / or microphone coupled to processing element 908). For example, the user output interface may be configured to run on and / or be accessible via computing entity 10 and provide a display or audible presentation of information / data and to provide an application, browser, user interface, interface, dashboard, screen, web page, page, and / or similar terms used interchangeably herein for interaction therewith via one or more user input interfaces. The user input interface may consist of any of several devices that allow computing entity 10 to receive data, such as a keypad 918 (hard or soft), a touch display, a voice / language or motion interface, a scanner, reader, or other input device. In embodiments including a keypad 918, the keypad 918 may include (or provide a representation of) conventional numeric (0-9) and related keys (#, *), as well as other keys used to operate the computing entity 10, and may include a set of alphabetic keys, or a set of keys that can be activated to provide a set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate certain functions, such as, for example, a screen saver and / or sleep mode. Through such input, the computing entity 10 may collect information / data, user interaction / input, and / or other information / data.

[0168] Computational entity 10 may also include volatile storage or memory 922 and / or non-volatile storage or memory 924, which may be embedded and / or removable. For example, the non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, and / or the like. The volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, registered memory, and / or the like. The volatile and non-volatile storage or memory may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, and / or the like to implement the functionality of computational entity 10.

[0169] conclusion Many modifications and other embodiments of the inventions set forth herein will come to mind to one skilled in the art to which these inventions pertain having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. It is to be understood, therefore, that the invention is not limited to the specific embodiments disclosed and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. [Explanation of symbols]

[0170] 5 Object position 10 Computational Entities 20 Network 30 Controllers 40 Vacuum Chamber 50 Voltage Source 60 Operation source 86 Optical Fiber 100 Quantum Computing System 110 Quantum Computer 115 Quantum Processor 200 Composite Containment Device Assembly 202 Spacing Structure 205 Confinement device board 206 Confinement device volume 208 Equipment plane 210 Confinement Device 212 Electrical parts, electrode parts 214 Optical Components 215 Photonic Platform 218 Platform Plane 220 Photonic Platform Substrate 221 Surface facing the containment device 222 Conductive layer 223 Second Surface 224 Waveguide layer 225 First Surface 226 Anti-reflection coating 228 Clad Photonic Components 229 Exposed Photonic Components 230 Cladding layer 231 First Surface 232 Transparent Section 235 Component Integration Platform Board 281 First operating signal 282 Second operating signal 283 Third Operation Signal 284 Fourth Operation Signal 300 Operation source 320A Platform Absorbing Sink 320B Device Absorption Sink 330A Platform Hole Sink 330B Device Hole Sink 332 Surface 340 Engineering Membranes 420 Collecting Optics 430 Collection 510 cavity 512 Surface Photonic Components 514 Reflective surface 520 cavity 522 Surface Photonic Components 524 Reflective surface 530 oblique axis cavity 532 Surface Photonic Components 534 Reflective surface 536 Normal 538 Cavity Axis 540 Mirroring Cavity 542 Surface Photonic Components 544 Reflective surface 550 Bifocal Mirroring Cavity 552 Surface Photonic Components 554 Reflective surface 705 Unpatterned Photonic Platform Substrate 715 Etch stop layer 720 spacer wafer 730 Alignment Mark 735 Alignment Mark 790 Loading Opening 791 Quantum Object Source, Source 792 Particle flux opening 793 Loading Opening 805 Processing Elements 810 memory 815 Driver Controller Elements 820 Communication Interface 825 Analog-to-Digital Converter Elements 904 Transmitter 906 Receiver 908 Processing Elements 912 Antenna 916 Display 918 keypad 920 Network Interface 922 Volatile Memory 924 Non-volatile Memory h Setting distance

Claims

1. 1. A composite containment device assembly comprising: a quantum object confinement device comprising one or more electrical components fabricated on a confinement device substrate; a photonic platform comprising one or more photonic components hosted by a photonic platform substrate, said photonic platform substrate being mechanically coupled to said confinement device substrate to form said composite confinement device assembly; A composite containment device assembly comprising:

2. 10. The composite confinement device assembly of claim 1, wherein the photonic platform comprises a conductive layer confinement device substrate on a surface of the photonic platform substrate facing the quantum object confinement device, the conductive layer comprising a transparent section of the conductive layer, and at least one of: (a) the conductive layer is configured to be held at a constant potential; or (b) the conductive layer comprises a plurality of patterned electrodes.

3. 3. The composite confinement device assembly of claim 2, wherein at least one of: (a) a surface of the conductive layer facing the quantum object confinement device has anti-reflective properties; and (b) the photonic platform comprises an anti-reflective layer on a surface of the photonic platform substrate facing away from the quantum object confinement device.

4. 3. The composite confinement device assembly of claim 2, wherein the photonic platform comprises one or more photonic platform sink components configured to act as respective optical sinks configured to facilitate removal of one or more undesired photons from a space between the quantum object confinement device and the photonic platform to reduce undesired illumination of one or more non-target quantum objects located between the quantum object confinement device and the photonic platform.

5. 5. The composite confinement device assembly of claim 4, wherein the one or more sink components comprise one or more of: a hole in the photonic platform configured to pass at least a first portion of the one or more undesired photons through the photonic platform substrate; a high optical transmittance engineered film configured to transmit at least a second portion of the one or more undesired photons; and a photon absorber configured to absorb at least a third portion of the one or more undesired photons.

6. the one or more photonic components of the photonic platform one or more planar optical elements; one or more guided mode photonic elements; one or more micro-machined lenses; one or more claddings; one or more photonic filters; one or more photonic converters; one or more photonic detectors; one or more active optical elements; 10. The composite containment device assembly of claim 1, comprising:

7. 2. The composite confinement device assembly of claim 1, wherein the quantum object confinement device comprises a confinement device photon sink configured to facilitate removal of one or more undesired photons from a space between the quantum object confinement device and the photonic platform to reduce undesired illumination of one or more non-target quantum objects located in the space between the quantum object confinement device and the photonic platform, the confinement device photon sink comprising one or more of: a hole or transparent window in the confinement device substrate configured to pass at least a first portion of the one or more undesired photons through the confinement device substrate; and a photon absorber configured to absorb at least a second portion of the one or more undesired photons.

8. 8. The composite confinement device assembly of claim 7, wherein the hole or transparent window in the confinement device substrate configured to pass at least the first portion of the one or more undesired photons through the confinement device substrate is further configured to dissipate at least the first portion of the one or more undesired photons.

9. 8. The composite confinement device assembly of claim 7, wherein the hole in the quantum object confinement device comprises a sink photon absorber configured to absorb at least the first portion of the one or more unwanted photons at the hole in the confinement device substrate.

10. 2. The composite confinement device assembly of claim 1, wherein the confinement device substrate is formed with an optical component configured to be illuminated by a first optical beam or pulse train and to provide a second optical beam or pulse train toward a defined location, the defined location being defined at least in part by the confinement device.

11. 11. The composite confinement device assembly of claim 10, wherein the photonic platform is configured to at least one of: (a) provide the first optical beam or pulse train to the optical component; and (b) provide a third optical beam or pulse train to the defined location, the third optical beam or pulse train being coaxial with the second optical beam or pulse train.

12. The composite confinement device assembly of claim 1 , wherein the photonic platform substrate is mechanically coupled to the confinement device substrate via one or more spacing structures.

13. The composite confinement device assembly of claim 12 , wherein each of the one or more spacing structures has a thickness corresponding to a set distance between the photonic platform and the confinement device substrate.

14. 13. The composite confinement device assembly of claim 12, wherein at least one of the one or more spacing structures comprises a respective actuator configured to mechanically couple the photonic platform to the confinement device substrate in an adjustable manner.

15. 15. The composite containment device assembly of claim 14, wherein each said actuator comprises a piezoelectric actuator.

16. The composite confinement device assembly of claim 1 , wherein the photonic platform substrate is mechanically coupled to the confinement device substrate via a nanopositioner mount arrangement.

17. 1. A method for fabricating a composite containment device assembly, comprising: fabricating a photonic platform comprising one or more photonic components hosted by a photonic platform substrate, the photonic platform substrate having one or more spacing structures extending from a surface of the photonic platform facing a confinement device; coupling the one or more spacing structures to a confinement device substrate, the confinement device substrate having a quantum object confinement device with one or more electrical components formed thereon; A method comprising:

18. bonding a spacer wafer to the photonic platform substrate; etching the spacer wafer to form the one or more spacing structures; 20. The method of claim 17, further comprising:

19. The method of claim 17 , wherein the photonic platform substrate comprises a transparent material.

20. 18. The method of claim 17, wherein the photonic platform substrate comprises silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, tantalum pentoxide, hafnia, or silicon carbide, and the spacer wafer comprises silicon, silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, tantalum pentoxide, hafnia, or silicon carbide.

21. 20. The method of claim 17, wherein fabricating the photonic platform comprises fabricating one or more photonic components on and / or in the photonic platform substrate.

22. the one or more photonic components one or more planar optical elements; one or more guided mode photonic elements; one or more micro-machined lenses; one or more claddings; one or more photonic filters; one or more photonic converters; one or more photonic detectors; one or more active optical elements; 22. The method of claim 21, comprising one or more of:

23. fabricating the photonic platform, fabricating one or more first photonic components on a surface of the photonic platform substrate configured to back against the confinement device; fabricating a cladding layer on the one or more first photonic components; smoothing the surface of the cladding layer; fabricating one or more second photonic components on the smoothed cladding; 18. The method of claim 17, comprising:

24. 24. The method of claim 23, wherein an anti-reflective coating is applied to the surface of the smoothed cladding.

25. The method of claim 23 , wherein the cladding layer and the photonic platform substrate comprise a common transparent material.

26. 20. The method of claim 17, wherein fabricating the photonic platform comprises fabricating a conductive layer on a surface of the photonic platform substrate configured to face the confinement device.

27. 27. The method of claim 26, wherein a surface of the conductive layer configured to face the quantum object confinement device has anti-reflective properties.

28. The method of claim 17 , wherein the relative positions of the one or more spacing structures are defined using lithography.

29. patterning one or more alignment marks on each of the one or more spacing structures; patterning alignment marks corresponding to each of one or more bonding locations on the confinement device substrate; Further comprising:

18. The method of claim 17, wherein bonding the one or more spacing structures to the confinement device substrate comprises aligning the one or more alignment marks with the corresponding alignment marks and bonding the one or more spacing structures to the bonding locations on the confinement device substrate.

30. 20. The method of claim 17, wherein the one or more spacing structures comprise respective actuators configured to adjust the relative positioning of the photonic platform and the confinement device with respect to one another.

31. 31. The method of claim 30, wherein each nanopositioner comprises a respective piezoelectric actuator.

32. a cryogenic and / or vacuum chamber; a composite containment device assembly according to claim 1 disposed within said cryogenic and / or vacuum chamber; A quantum processor comprising:

33. 33. A quantum processor according to claim 32; a controller configured to control at least one operation of a photonic component of the photonic platform, the photonic component comprising a voltage source or an active optical element configured to provide a voltage signal to an electrical component of the quantum object confinement device; A quantum computer equipped with

34. 1. A composite containment device assembly comprising: a quantum object confinement device fabricated on the confinement device substrate; It is a photonic platform, one or more photonic components hosted by the photonic platform substrate; a loading aperture configured to pass a quantum object through the quantum object confinement device; Equipped with a photonic platform, wherein the photonic platform substrate is mechanically coupled to the confinement device substrate to form the composite confinement device assembly, and the quantum object is generated by a source outside the composite confinement device assembly; A composite containment device assembly comprising:

35. 35. The composite containment device assembly of claim 34, wherein the loading opening comprises a through-hole through the photonic platform.

36. 36. The composite containment device assembly of claim 35, wherein said photonic platform comprises one or more photonic layers, and said loading opening extends through all of said photonic layers.

37. 35. The composite confinement device assembly of claim 34, comprising a confinement device volume created by mechanically coupling said confinement device substrate and said photonic platform substrate.

38. 38. The composite confinement device assembly of claim 37, comprising a particle flux opening configured to pass quantum objects that exit the confinement device volume without being captured and / or confined by the confinement device.

39. 39. The composite containment device assembly of claim 38, wherein said particle flux opening comprises a through-hole through said photonic platform.

40. 40. The composite containment device assembly of claim 39, wherein said particle flux opening is parallel to said loading opening.

41. 39. The composite containment device assembly of claim 38, wherein the particle flux opening comprises a through-hole through the containment device.

42. 42. The composite containment device assembly of claim 41, wherein said particle flux opening is collinear with said loading opening.

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