Semiconductor device and manufacturing method

Abstract

In one embodiment, the semiconductor device (1) comprises a gate electrode (33), a first semiconductor region (21) of a first conductivity type on the top surface (20) of the semiconductor body (2), a plug region (24) of a second conductivity type, a first electrode (31) in electrical contact with the first semiconductor region (21) and the plug region (24), a well region (23) of the second conductivity type, and at least one barrier region (41, 42) comprising a first barrier region (41) within the semiconductor body (2), the well region (23) being located between the first barrier region (41) and the first semiconductor region (21), the first barrier region (41) being a barrier for charge carriers of the second conductivity type, the first electrode (31) extending into the semiconductor body (2) in a direction to the first barrier region (41) at a depth that is either deeper than the first semiconductor region (21) or the same depth as the first semiconductor region (21).

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