Deposition mask and method for manufacturing deposition mask

Abstract

To provide a vapor deposition mask which suppresses the occurrence of a shadow while suppressing the occurrence of deformation or the like, and to provide a method for manufacturing the same.SOLUTION: The vapor deposition mask includes a metal plate including a first surface and a second surface located on the opposite side of the first surface, through-holes 25 penetrating from the first surface side to the second surface side of the metal plate, and a flat region 52 located between two adjacent through-holes when the vapor deposition mask is viewed from the second surface side. The through holes are arranged in a staggered manner in the first direction D1 portion and the second direction D2 portion in a plan view. The flat region includes a first flat region 53 located on one side of the first center line L1 and a second flat region 54 located on the other side of the first center line LA. The first center line passes through center points of two through holes adjacent to each other in the first direction. The first flat region includes a portion in which a dimension of the first flat region in the first direction increases as a distance from the first center line increases. The second flat region includes a portion in which a dimension of the second flat region in the first direction increases as a distance from the first center line increases.SELECTED DRAWING: Figure 5A

Description

[Technical Field]

[0001] TECHNICAL FIELD Embodiments of the present disclosure relate to a deposition mask and a method for manufacturing the deposition mask. [Background technology]

[0002] Display devices used in portable devices such as smartphones and tablet PCs preferably have high resolution, with a pixel density of, for example, 400 ppi or higher. There is also a growing demand for portable devices to support ultra-high definition (UHD), and in this case, it is preferable for the pixel density of the display device to be, for example, 800 ppi or higher.

[0003] Among display devices, organic EL display devices have attracted attention due to their excellent responsiveness, low power consumption, and high contrast. A known method for forming pixels in an organic EL display device is to form pixels in a desired pattern using a deposition mask with through-holes arranged in a desired pattern. Specifically, the deposition mask is first combined with a substrate for the organic EL display device. Then, a deposition material containing an organic material is attached to the substrate through the through-holes in the deposition mask. By performing this deposition process, pixels having a deposition layer containing the deposition material can be formed on the substrate in a pattern corresponding to the pattern of the through-holes in the deposition mask.

[0004] A known method for manufacturing a mask is to form a through-hole in a metal plate by etching using photolithography. For example, first, a first-side resist layer is formed on a first surface of the metal plate, and a second-side resist layer is formed on a second surface of the metal plate. Next, a region of the first surface of the metal plate that is not covered by the first-side resist layer is etched to form a first recess in the first surface of the metal plate. Thereafter, a region of the second surface of the metal plate that is not covered by the second-side resist layer is etched to form a second recess in the second surface of the metal plate. At this time, etching is performed so that the first recess and the second recess communicate with each other, thereby forming a through-hole that penetrates the metal plate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-148745 Summary of the Invention [Problem to be solved by the invention]

[0006] During the deposition process, a portion of the deposition material moving from the deposition source toward the deposition mask moves in a direction inclined relative to the normal direction of the metal plate constituting the deposition mask. The deposition material moving in a direction inclined relative to the normal direction of the metal plate tends to adhere to the wall surfaces of the through holes without passing through the through holes of the deposition mask. Therefore, the thickness of the deposition layer formed by the deposition material adhering to the substrate tends to be thinner the closer it is to the wall surfaces of the through holes. This phenomenon in which the deposition material is prevented from adhering to the substrate by the wall surfaces of the through holes is also called a shadow. [Means for solving the problem]

[0007] In one embodiment of the present disclosure, a deposition mask including two or more through holes is a metal plate including a first surface and a second surface opposite to the first surface; the through hole penetrating from the first surface side to the second surface side of the metal plate; a flat region located between two adjacent through holes when the deposition mask is viewed from the second surface side, the through holes are staggered in a first direction and a second direction in a plan view, the flat region includes a first flat region located on one side of a first center line and a second flat region located on the other side of the first center line; the first center line passes through center points of two of the through holes adjacent to each other in the first direction, the first flat region includes a portion in which a dimension of the first flat region in the first direction increases as the dimension increases away from the first centerline; The second flat region includes a portion where the dimension of the second flat region in the first direction increases with increasing distance from the first centerline. [Effects of the Invention]

[0008] According to the embodiment of the present disclosure, it is possible to suppress the occurrence of shadows while suppressing defects such as deformation of the deposition mask. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view showing an example of an organic EL display device. [Figure 2] 2 is a cross-sectional view of the organic EL display device of FIG. 1 as viewed from the II-II direction. [Figure 3] FIG. 1 is a diagram showing a vapor deposition apparatus including a vapor deposition mask device according to an embodiment of the present disclosure. [Figure 4] FIG. 1 is a plan view showing an example of a deposition mask device. [Figure 5A] 5 is a plan view showing an example of an effective area of ​​a deposition mask of the deposition mask device of FIG. 4, viewed from the second surface side. FIG. [Figure 5B] 5B is a plan view showing the through-hole region of FIG. 5A. FIG. [Figure 6] FIG. 5B is an example of a cross-sectional view of the deposition mask of FIG. 5A taken along line AA. [Figure 7] FIG. 5B is an example of a cross-sectional view of the deposition mask taken along line BB in FIG. 5A. [Figure 8] FIG. 5B is an example of a cross-sectional view taken along line CC of the deposition mask of FIG. 5A. [Figure 9] FIG. 5B is a plan view showing the first flat region and the second flat region of FIG. 5A. [Figure 10] 1A to 1C are schematic diagrams for explaining an example of a method for manufacturing a deposition mask overall. [Figure 11] 10A to 10C are diagrams showing steps of forming a first resist layer and a second resist layer on a metal plate. [Figure 12] 10A to 10C are diagrams showing steps of patterning the first resist layer and the second resist layer. [Figure 13]FIG. 10 is a diagram showing a first surface etching step. [Figure 14] FIG. 10 is a diagram showing a second surface etching step. [Figure 15] FIG. 10 is a diagram showing a second surface etching step. [Figure 16] FIG. 3 is a plan view showing an example of a first flat region and a second flat region of a deposition mask. [Figure 17] FIG. 3 is a plan view showing an example of a first flat region and a second flat region of a deposition mask. [Figure 18] FIG. 4 is a plan view showing an example of an effective area of ​​the deposition mask as viewed from the second surface side. [Figure 19] FIG. 19 is an example of a cross-sectional view taken along line DD of the deposition mask of FIG. 18. [Figure 20] 19 is a plan view showing the first flat region and the second flat region of FIG. 18. FIG. [Figure 21] FIG. 2 is a cross-sectional view showing an example of a metal plate on which a patterned second surface resist layer is provided. [Figure 22] 10A to 10C are diagrams illustrating an example of a second surface etching step. [Figure 23] FIG. 10 is a diagram showing an example of a first surface machining step. [Figure 24] 1A and 1B are diagrams showing the configuration of a deposition mask and evaluation results in Examples. DETAILED DESCRIPTION OF THE INVENTION

[0010] In this specification and drawings, unless otherwise specified, terms that refer to a material that forms the basis of a certain configuration, such as "substrate," "base material," "plate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0011] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not to be construed as being bound by strict meanings, but rather as including a range within which similar functions can be expected.

[0012] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirectly in contact. Unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the reversed up-down direction.

[0013] In this specification and drawings, unless otherwise specified, the same or similar symbols are used for the same parts or parts having similar functions, and repeated explanations may be omitted. For convenience of explanation, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0014] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other embodiments to the extent that no contradiction occurs. Other embodiments may also be combined with each other to the extent that no contradiction occurs.

[0015] In the present specification and drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. The order of the disclosed steps is arbitrary within the range that does not cause a contradiction.

[0016] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values ​​before and after the symbol "to." For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

[0017] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0018] A first aspect of the present disclosure is a deposition mask including two or more through holes, a metal plate including a first surface and a second surface opposite to the first surface; the through hole penetrating from the first surface side to the second surface side of the metal plate; a flat region located between two adjacent through holes when the deposition mask is viewed from the second surface side, the through holes are staggered in a first direction and a second direction in a plan view, the flat region includes a first flat region located on one side of a first center line and a second flat region located on the other side of the first center line; the first center line passes through center points of two of the through holes adjacent to each other in the first direction, the first flat region includes a portion in which a dimension of the first flat region in the first direction increases as the dimension increases away from the first centerline; The second flat region is a deposition mask including a portion in which the dimension of the second flat region in the first direction increases with increasing distance from the first center line.

[0019] A second aspect of the present disclosure is the deposition mask according to the first aspect, wherein the first flat region and the second flat region may be continuous.

[0020] A third aspect of the present disclosure may be such that, in the deposition mask according to the first aspect described above, the first flat region and the second flat region are discontinuous.

[0021] A fourth aspect of the present disclosure is such that, in the deposition mask according to each of the first to third aspects described above, when the deposition mask is viewed from the second surface side, two of the through holes adjacent to each other in the second direction may be connected to each other.

[0022] A fifth aspect of the present disclosure may be such that the deposition mask according to each of the first to third aspects described above includes a third flat region located between two adjacent through holes in the second direction when the deposition mask is viewed from the second surface side.

[0023] A sixth aspect of the present disclosure is the deposition mask according to the first aspect, wherein the first flat region and the second flat region may be continuous, and two of the through holes adjacent to each other in the second direction may be connected to each other when the deposition mask is viewed from the second surface side, The dimension in the first direction of the portion of the first flat region that overlaps with the first center line may be 0.90 times or less the distance in the first direction between the ends of a pair of contours of the first flat region that face the through hole in the first direction.

[0024] A seventh aspect of the present disclosure is the deposition mask according to the first aspect or the sixth aspect, wherein the first flat region and the second flat region may be continuous with each other, and two of the through holes adjacent to each other in the second direction may be connected to each other when the deposition mask is viewed from the second surface side, a dimension in a third direction of a portion of the flat region that overlaps with a third center line may be 1.00 times or less of a distance in the third direction between ends of a pair of contours of the flat region that face the through hole in the third direction, The third direction may be perpendicular to the first direction; The third center line may pass through a midpoint between two of the through holes adjacent to each other in the first direction and extend in the third direction.

[0025] An eighth aspect of the present disclosure is the deposition mask according to any one of the first to third aspects, wherein the through hole may include a first recess including a first wall surface located on the first surface side, and a second recess including a second wall surface located on the second surface side and connected to the first recess, The second wall surface may include a portion that is displaced toward the center point of the through hole as it moves from the second surface side toward the first surface side.

[0026] A ninth aspect of the present disclosure is a deposition mask according to each of the first to eighth aspects described above, wherein the flat region may exhibit a pixel value equal to or greater than a reference value when observed using a laser microscope from the second surface side.

[0027] A tenth aspect of the present disclosure is the deposition mask according to any one of the first to ninth aspects described above, wherein the thickness of the flat region may be the same as the thickness of the metal plate.

[0028] An eleventh aspect of the present disclosure is the vapor deposition mask according to each of the first to tenth aspects described above, wherein the metal plate may have a thickness of 30 μm or less.

[0029] A twelfth aspect of the present disclosure is a method for manufacturing a vapor deposition mask including two or more through holes, comprising: a first surface processing step of forming a first recess including a first wall surface on a first surface of the metal plate; a second-surface etching step of etching, with an etching solution, an area of ​​a second surface of the metal plate located opposite the first surface that is not covered by the second-surface resist layer, to form a second recess including a second wall surface in the second surface, the through hole includes the first recess and a second recess connected to the first recess, the second-surface etching step is performed so that a flat region remains between two adjacent through holes when the deposition mask is viewed from the second surface side; the through holes are staggered in a first direction and a second direction in a plan view, the flat region includes a first flat region located on one side of a first center line between two of the through holes adjacent to each other in the first direction and a second flat region located on the other side of the first center line, the first center line passes through center points of two of the through holes adjacent to each other in the first direction, the first flat region includes a portion in which a dimension of the first flat region in the first direction increases as the dimension increases away from the first centerline; In the method for manufacturing a deposition mask, the second flat region includes a portion where the dimension of the second flat region in the first direction increases with increasing distance from the first center line.

[0030] A thirteenth aspect of the present disclosure is the method for manufacturing a deposition mask according to the twelfth aspect described above, wherein the second surface etching step may be performed so that the first flat region and the second flat region are continuous.

[0031] A fourteenth aspect of the present disclosure is the method for manufacturing a deposition mask according to the twelfth aspect described above, wherein the second surface etching step may be performed so that the first flat region and the second flat region are discontinuous.

[0032] A fifteenth aspect of the present disclosure is a method for manufacturing a deposition mask according to each of the twelfth to fourteenth aspects described above, wherein the second surface etching step may be performed so that two adjacent through holes in the second direction are connected when the deposition mask is viewed from the second surface side.

[0033] A sixteenth aspect of the present disclosure is that in the method for manufacturing a deposition mask according to each of the twelfth aspect to the fourteenth aspect described above, the second surface etching step may be performed so that two adjacent through holes in the second direction are not connected when the deposition mask is viewed from the second surface side.

[0034] A seventeenth aspect of the present disclosure is the method for manufacturing a deposition mask according to each of the twelfth aspect to the sixteenth aspect, wherein the second surface resist layer may include a first region corresponding to the first flat region and a second region corresponding to the second flat region; The first region may include a portion in which a dimension of the first region in the first direction increases as the dimension increases away from the first center line, The second region may include a portion in which the dimension of the second region in the first direction increases with increasing distance from the first center line.

[0035] An 18th aspect of the present disclosure is a method for manufacturing a deposition mask according to each of the 12th aspect to the 17th aspect described above, wherein the flat region may exhibit a pixel value equal to or greater than a reference value when observed using a laser microscope from the second surface side.

[0036] A nineteenth aspect of the present disclosure is the method for manufacturing a vapor deposition mask according to each of the twelfth to eighteenth aspects described above, wherein the metal plate may have a thickness of 30 μm or less.

[0037] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0038] Fig. 1 is a plan view showing an example of an organic EL display device 100. Fig. 2 is a cross-sectional view of the organic EL display device 100 of Fig. 1 as seen from the II-II direction. In Fig. 1, the second electrode layer 141 and the sealing substrate 150 are omitted.

[0039] As shown in Figures 1 and 2, the organic EL display device 100 may include a substrate 110 and a first electrode layer 120 located on the first surface 111 side of the substrate 110, a first organic layer 131, a second organic layer 132, and a third organic layer 133 located on the first electrode layer 120, and a second electrode layer 141 located on the first organic layer 131, the second organic layer 132, and the third organic layer 133.

[0040] The substrate 110 may be an insulating plate-like member. The substrate 110 is preferably transparent so as to transmit light. The substrate 110 includes, for example, glass.

[0041] The first electrode layer 120 includes a conductive material. For example, the first electrode layer 120 may include a metal, a conductive metal oxide, or other inorganic material. The first electrode layer 120 may include a transparent and conductive metal oxide, such as indium tin oxide.

[0042] 1, the first electrode layers 120 may be aligned along a first arrangement direction F1 and a second arrangement direction F2 in a plan view. As shown in FIG. 1, the second arrangement direction F2 may be perpendicular to the first arrangement direction F1.

[0043] The first organic layer 131, the second organic layer 132, and the third organic layer 133 may be layers containing an organic semiconductor material. The first organic layer 131, the second organic layer 132, and the third organic layer 133 may each be an emitting layer. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be a red emitting layer, a green emitting layer, and a blue emitting layer, respectively. A region including one first electrode layer 120, one vapor deposition layer, and the second electrode layer 141 in a plan view may constitute a unit structure such as one pixel of an organic EL display device.

[0044] As shown in FIG. 1 , the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged in the first arrangement direction F1 and the second arrangement direction F2 so that organic layers of the same type are not adjacent to each other. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be arranged in the first arrangement direction F1 and the second arrangement direction F2 so that the second organic layer 132 is located between two first organic layers 131 and between two third organic layers 133. In this case, focusing on the second organic layers 132, the second organic layers 132 are arranged in a zigzag pattern at positions shifted by a distance of ½ the arrangement pitch F3 in the first arrangement direction F1 and a distance of ½ the arrangement pitch F4 in the second arrangement direction F2. This arrangement is also referred to as a staggered arrangement.

[0045] The first organic layer 131, the second organic layer 132, and the third organic layer 133 may each be a deposition layer formed by depositing a deposition material onto the substrate 110 through through-holes in a deposition mask corresponding to the pattern of each organic layer.

[0046] The second electrode layer 141 may contain a conductive material such as a metal. Examples of materials that can be used to form the second electrode layer 141 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof.

[0047] Although not shown, the second electrode layer 141 may be formed so that there is a gap between the second electrode layers 141 located on two adjacent organic layers 131, 132, and 133. Such second electrode layers 141 may be formed by applying a deposition material to the substrate 110 through through-holes in a deposition mask that correspond to the pattern of the second electrode layer 141.

[0048] As shown in FIG. 2, the organic EL display device 100 may include an insulating layer 160 located between two adjacent first electrode layers 120 in a planar view. The insulating layer 160 may include, for example, polyimide. The insulating layer 160 may overlap an end portion of the first electrode layer 120. In this case, the dotted line labeled 120 in FIG. 1 indicates the outer edge of a region of the first electrode layer 120 that does not overlap with the insulating layer 160. As shown in FIG. 1, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may extend to cover the first electrode layer 120 in a planar view. The outlines of the first organic layer 131, the second organic layer 132, and the third organic layer 133 may surround the outline of the first electrode layer 120 in a planar view.

[0049] 2, the organic EL display device may include an encapsulation substrate 150 that covers elements on the substrate 110, such as the organic layers 131, 132, and 133, on the first surface 111 side of the substrate 110. The encapsulation substrate 150 can prevent water vapor and the like from outside the organic EL display device from entering the inside of the organic EL display device. This can prevent the organic layers 131, 132, and 133 from deteriorating due to moisture. The encapsulation substrate 150 includes, for example, glass.

[0050] Although not shown, the organic EL display device may include a hole injection layer and a hole transport layer located between the first electrode layer 120 and the organic layers 131, 132, and 133. The organic EL display device may also include an electron transport layer and an electron injection layer located between the organic layers 131, 132, and 133 and the second electrode layer 141. The hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be formed by applying a deposition material to the substrate 110 through through-holes in a deposition mask corresponding to the pattern of each layer, similar to the organic layers 131, 132, and 133.

[0051] Next, a vapor deposition apparatus 90 for forming layers such as the organic layers 131, 132, and 133 constituting the organic EL display device by vapor deposition will be described. As shown in FIG. 3 , the vapor deposition apparatus 90 may include therein a vapor deposition source 94, a heater 96, and a vapor deposition mask device 10. The vapor deposition apparatus 90 may further include an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 90. The vapor deposition source 94 is, for example, a crucible, and contains a vapor deposition material 98 such as an organic light-emitting material. The heater 96 heats the vapor deposition source 94 to evaporate the vapor deposition material 98 under a vacuum atmosphere. The vapor deposition mask device 10 is disposed opposite the crucible 94.

[0052] The deposition mask device 10 includes at least one deposition mask 20. The deposition mask device 10 may include a frame 15 that supports the deposition mask 20. The frame 15 may support the deposition mask 20 while pulling it in the plane direction thereof so as to prevent the deposition mask 20 from bending.

[0053] 3, the deposition mask device 10 is placed in a deposition device 90 so that the deposition mask 20 faces a substrate 110, which is an object to which a deposition material 98 is to be attached. The deposition mask 20 includes a plurality of through-holes 25 that allow the deposition material 98 coming from a deposition source 94 to pass through. In the following description, the surface of the deposition mask 20 located on the substrate 110 side will be referred to as a first surface 51a, and the surface of the deposition mask 20 located opposite the first surface 51a will be referred to as a second surface 51b.

[0054] As shown in FIG. 3 , the deposition mask device 10 may include a magnet 93 disposed on the surface of the substrate 110 opposite the deposition mask 20. By providing the magnet 93, the deposition mask 20 can be attracted toward the magnet 93 by magnetic force. This can reduce or eliminate the gap between the deposition mask 20 and the substrate 110. This can suppress the occurrence of shadows during the deposition process and improve the dimensional accuracy and positional accuracy of the deposition layer formed on the substrate 110.

[0055] FIG. 4 is a plan view showing the deposition mask device 10 as viewed from the first surface 51a side of the deposition mask 20. As shown in FIG. 4, the deposition mask device 10 may include multiple deposition masks 20. The shape of the deposition mask 20 may be rectangular having a length direction and a width direction perpendicular to the length direction. The dimension of the deposition mask 20 in the length direction is larger than the dimension of the deposition mask 20 in the width direction. In the following description, the length direction will also be referred to as the mask first direction, and the width direction will also be referred to as the mask second direction. The multiple deposition masks 20 may be aligned in the mask second direction N2. Ends 17a, 17b of each deposition mask 20 in the mask first direction N1 may be fixed to the frame 15 by, for example, welding. Although not shown, the deposition mask device 10 may include a member fixed to the frame 15 and partially overlapping the deposition mask 20 in the thickness direction of the deposition mask 20. Examples of such members include a member that extends in the second mask direction N2 and supports the deposition mask 20, and a member that overlaps the gap between two adjacent deposition masks.

[0056] 4, the deposition mask 20 may have a pair of end portions 17a, 17b overlapping the frame 15, and an intermediate portion 18 located between the end portions 17a, 17b. The intermediate portion 18 may have at least one effective area 22 and a peripheral area 23 located around the effective area 22. As shown in FIG. 4, the intermediate portion 18 may include a plurality of effective areas 22 arranged at predetermined intervals along the mask first direction N1. The peripheral area 23 may surround the plurality of effective areas 22.

[0057] When the layers of the organic EL display device 100 are produced using the deposition mask 20, one effective area 22 may correspond to one display area of ​​the organic EL display device 100. One effective area 22 may correspond to multiple display areas. Although not shown, multiple effective areas 22 may also be arranged at predetermined intervals in the mask second direction N2.

[0058] The effective area 22 may have a rectangular outline in a plan view. The effective area 22 may have an outline of various shapes depending on the shape of the display area of ​​the organic EL display device. For example, the effective area 22 may have a circular outline.

[0059] Next, the effective area 22 will be described in detail. Fig. 5A is a plan view showing an example of the effective area 22 of the deposition mask 20 as seen from the second surface 51b side. In the present embodiment, an example will be described in which the through holes 25 of the deposition mask 20 are arranged in a staggered pattern as shown in Fig. 5A. Such a deposition mask 20 can be used to form a deposition layer in a staggered pattern, such as the above-described second organic layer 132.

[0060] The effective area 22 of the deposition mask 20 includes a metal plate 51 including a first surface 51a and a second surface 51b, and a plurality of through holes 25 penetrating the metal plate 51 from the first surface 51a side to the second surface 51b side. As shown in FIG. 5A , the through holes 25 may be aligned in a first direction D1 and a second direction D2 intersecting the first direction D1 in a plan view. The arrangement of the through holes 25 in a plan view may be a staggered arrangement, similar to the deposition layer. Specifically, as shown in FIG. 5A , a distance M21 in the first direction D1 between center points C1 of two adjacent through holes 25 in the second direction D2 may be half the first center-to-center distance M1 between the center points C1 of two adjacent through holes 25 in the first direction D1.

[0061] In Fig. 5A, the symbol D3 represents a third direction D3 that is perpendicular to the first direction D1. The symbol D4 represents a fourth direction D4 that is symmetrical to the second direction D2 with respect to the third direction D3. As shown in Fig. 5A, the plurality of through holes 25 may also be aligned in the fourth direction D4. Although not shown, the distance in the first direction D1 between the center points C1 of two through holes 25 adjacent to each other in the fourth direction D4 may also be 1 / 2 of the first center-to-center distance M1.

[0062] The second center distance M2 between the center points C1 of two adjacent through holes 25 in the second direction D2 may be the same as the first center distance M1, may be larger than the first center distance M1, or may be smaller than the first center distance M1.

[0063] A third center distance M3 between the center points C1 of two adjacent through holes 25 in the third direction D3 may be greater than the first center distance M1. The ratio M3 / M1 of the third center distance M3 to the first center distance M1 may be, for example, 1.1 or greater, 1.3 or greater, or 1.5 or greater. M3 / M1 may be, for example, 1.7 or less, 2.0 or less, or 2.5 or less. The range of M3 / M1 may be defined by a first group consisting of 1.1, 1.3, and 1.5 and / or a second group consisting of 1.7, 2.0, and 2.5. The range of M3 / M1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of M3 / M1 may be defined by a combination of any two of the values ​​included in the first group. The range of M3 / M1 may be determined by a combination of any two of the values ​​included in the second group described above, for example, 1.1 to 2.5, 1.1 to 2.0, 1.1 to 1.7, 1.1 to 1.5, 1.1 to 1.3, 1.3 to 2.5, 1.3 to 2.0, 1.3 to 1.7, 1.3 to 1.5, 1.5 to 2.5, 1.5 to 2.0, 1.5 to 1.7, 1.7 to 2.5, 1.7 to 2.0, or 2.0 to 2.5.

[0064] As shown in FIG. 5A , the through hole 25 includes a through region 42. The through region 42 is a region that penetrates the metal plate 51 in a plan view. The through region 42 can be defined by light that passes through the through hole 25. For example, parallel light is incident on one of the first surface 51 a or the second surface 51 b of the vapor deposition mask 20 along the normal direction of the metal plate 51, passes through the through hole 25, and is emitted from the other of the first surface 51 a or the second surface 51 b. The region occupied by the emitted light in the surface direction of the metal plate 51 is then adopted as the through region 42 of the through hole 25. Alternatively, the through region 42 may be defined by observing the vapor deposition mask 20 using a laser microscope.

[0065] 5B is a diagram illustrating the contour and arrangement of the through region 42 of the through hole 25 in a plan view. As shown in FIG. 5B, the contour of the through region 42 of the through hole 25 may include a pair of first contours 42a, a pair of third contours 42c, two second contours 42b located between the first contours 42a and the third contours 42c, and two fourth contours 42d located between the first contours 42a and the third contours 42c. In the first direction D1, the first contours 42a of two adjacent through holes 25 face each other. In the second direction D2, the second contours 42b of two adjacent through holes 25 face each other. In the fourth direction D4, the fourth contours 42d of two adjacent through holes 25 face each other.

[0066] The first contour 42a may include a portion that extends linearly in the third direction D3, or may include a curved portion. When the first contour 42a includes a curved portion, the curvature of the curved portion of the first contour 42a may be greater than the curvature of the second contour 42b and the curvature of the fourth contour 42d.

[0067] The third contour 42c may include a portion that extends linearly in the first direction D1, or may include a curved portion. When the third contour 42c includes a curved portion, the curvature of the curved portion of the third contour 42c may be greater than the curvature of the second contour 42b and the curvature of the fourth contour 42d.

[0068] Next, the region between the through holes 25 will be described. As shown in FIG. 5A, the effective region 22 of the deposition mask 20 may include a flat region 52 located between two adjacent through holes 25 when the deposition mask 20 is viewed from the second surface 51b side. The flat region 52 may be defined as a region exhibiting a pixel value equal to or greater than a reference value when the deposition mask 20 is observed from the second surface 51b side using a laser microscope. The reference value is half the maximum pixel value that each pixel in an image captured by the laser microscope can have. The laser microscope used and the observation conditions are as follows: Laser microscope: Keyence VK-X250 Laser light: Blue (wavelength 408nm) Objective lens: 50x Optical zoom: 1.0x Measurement mode: Surface profile ·Measurement quality: fast Uses Real Peak Detection (RPD) function

[0069] As shown in FIG. 5A, the flat region 52 may include a first flat region 53 and a second flat region 54. The first flat region 53 and the second flat region 54 are located between two adjacent through holes 25 in the first direction D1. The first flat region 53 and the second flat region 54 face each other across a first center line L1 in the third direction D3. The first center line L1 is a straight line passing through the center points C1 of the two adjacent through holes 25 in the first direction D1. The first flat region 53 is located on one side of the first center line L1. The second flat region 54 is located on the other side of the first center line L1. In the example shown in FIG. 5A, the one side is the upper side, and the other side is the lower side.

[0070] The first flat region 53 and the second flat region 54 are located between the first through hole 25 and the second through hole 25 that are adjacent to each other in the third direction D3. The first flat region 53 is located between the first through hole 25 and the first center line L1. The second flat region 54 is located between the second through hole 25 and the first center line L1.

[0071] 5A, the symbol U1 represents the distance between the through region 42 and the flat region 52 in the first direction D1. The distance U1 is determined at the position of the first center line L1. The symbol U3 represents the distance between the through region 42 and the flat region 52 in the third direction D3. The distance U3 is determined at the position of the third center line L3.

[0072] The distance U3 may be the same as the distance U1. The distance U3 may be greater than the distance U1. The ratio of the distance U3 to the distance U1, U3 / U1, may be, for example, 1.01 or greater, 1.03 or greater, 1.05 or greater, or 1.10 or greater. The distance U3 may be smaller than the distance U1. U3 / U1 may be, for example, 0.99 or less, 0.97 or less, 0.95 or less, or 0.90 or less.

[0073] 5A, the first flat region 53 and the second flat region 54 may be continuous in the third direction D3. That is, the first flat region 53 and the second flat region 54 may be connected at the first center line L1. As will be described later, the first flat region 53 and the second flat region 54 may be discontinuous. That is, a non-flat region may exist between the first flat region 53 and the second flat region 54.

[0074] 5A, there may not be a flat region 52 between two adjacent through holes 25 in the second direction D2. For example, two adjacent through holes 25 in the second direction D2 may be connected. In this case, the flat region 52 located between two adjacent through holes 25 in the first direction D1 is independent from other adjacent flat regions 52 in the second direction D2 and the fourth direction D4. The symbol U2 represents the distance between two adjacent flat regions 52 in the second direction D2.

[0075] Next, the cross-sectional structures of the through holes 25 and the flat region 52 will be described with reference to Fig. 6 and Fig. 7. Fig. 6 is a cross-sectional view of the deposition mask 20 in Fig. 5A taken along line AA, which extends in the first direction D1 and passes through the through holes 25. Fig. 7 is a cross-sectional view of the deposition mask in Fig. 5A taken along line BB, which extends in the second direction D2 and passes through the through holes 25.

[0076] As shown in FIGS. 6 and 7 , the through hole 25 may include a first recess 30 and a second recess 35. The first recess 30 includes a first wall surface 31 located on the first surface 51a side. The second recess 35 includes a second wall surface 36 located on the second surface 51b side. The second recess 35 is connected to the first recess 30 at a connecting portion 41. The first wall surface 31 is a surface that extends from a first end 32 of the through hole 25 toward the second surface 51b side. The first end 32 is the end of the through hole 25 on the first surface 51a. The second wall surface 36 is connected to the first wall surface 31 via the connecting portion 41 and is a surface that extends from the connecting portion 41 toward the second surface 51b side and reaches a second end 37. The second end 37 is the end of the through hole 25 on the second surface 51b. 6 and 7, the second recesses 35 may have dimensions larger than the first recesses 30 in the surface direction of the deposition mask 20. For example, the outline of the second recesses 35 may surround the outline of the first recesses 30 in a plan view.

[0077] As will be described later, the first recess 30 may be formed by etching the metal plate 51 constituting the deposition mask 20 from the first surface 51a side. The second recess 35 may be formed by etching the metal plate 51 from the second surface 51b side. The connection portion 41 is a portion where the first recess 30 and the second recess 35 are connected. At the connection portion 41, the direction in which the wall surface of the through hole 25 expands may change. For example, the direction in which the wall surface expands may change discontinuously.

[0078] 6 and 7, the second wall surface 36 may include a portion that displaces toward the center point of the through hole 25 in a plan view as it moves from the second surface 51b toward the first surface 51a. Similarly, the first wall surface 31 may include a portion that displaces toward the center point of the through hole 25 in a plan view as it moves from the first surface 51a toward the second surface 51b. In this case, the opening area of ​​the through hole 25 may be minimized at the connection portion 41. In other words, the connection portion 41 may define the outline of the above-mentioned through region 42.

[0079] 5A and 6, the symbol S1 represents the maximum dimension of the through-hole region 42 in the first direction D1. In Figures 5A and 7, the symbol S2 represents the maximum dimension of the through-hole region 42 in the second direction D2. The dimension S2 may be greater than the dimension S1.

[0080] The ratio S2 / S1 of the dimension S2 to the dimension S1 may be, for example, 1.01 or more, 1.05 or more, or 1.10 or more. S2 / S1 may be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The range of S2 / S1 may be defined by a first group consisting of 1.01, 1.05, and 1.10 and / or a second group consisting of 1.20, 1.30, and 1.50. The range of S2 / S1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of S2 / S1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of S2 / S1 may be defined by a combination of any two of the values ​​included in the second group described above. For example, it may be 1.01 or more and 1.50 or less, 1.01 or more and 1.30 or less, 1.01 or more and 1.20 or less, 1.01 or more and 1.10 or less, 1.01 or more and 1.05 or less, 1.05 or more and 1.50 or less, 1.05 or more and 1.30 or less, 1.05 or more and 1.20 or less, 1.05 or more and 1.10 or less, 1.10 or more and 1.50 or less, 1.10 or more and 1.30 or less, 1.10 or more and 1.20 or less, 1.20 or more and 1.50 or less, 1.20 or more and 1.30 or less, or 1.30 or more and 1.50 or less.

[0081] In FIG. 5A , symbol S3 denotes the maximum dimension of the through-hole region 42 in the third direction D3. Dimension S3 may be greater than dimension S1. The ratio of dimension S3 to dimension S1, S3 / S1, may be, for example, 1.01 or greater, 1.05 or greater, or 1.10 or greater. S3 / S1 may be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The range of S3 / S1 may be defined by a first group consisting of 1.01, 1.05, and 1.10, and / or a second group consisting of 1.20, 1.30, and 1.50. The range of S3 / S1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S3 / S1 may be defined by a combination of any two of the values ​​included in the first group. The range of S3 / S1 may be determined by a combination of any two of the values ​​included in the second group described above. For example, it may be 1.01 or more and 1.50 or less, 1.01 or more and 1.30 or less, 1.01 or more and 1.20 or less, 1.01 or more and 1.10 or less, 1.01 or more and 1.05 or less, 1.05 or more and 1.50 or less, 1.05 or more and 1.30 or less, 1.05 or more and 1.20 or less, 1.05 or more and 1.10 or less, 1.10 or more and 1.50 or less, 1.10 or more and 1.30 or less, 1.10 or more and 1.20 or less, 1.20 or more and 1.50 or less, 1.20 or more and 1.30 or less, or 1.30 or more and 1.50 or less. Although not shown, the dimension S3 may be the same as the dimension S1 or may be smaller than the dimension S1.

[0082] Next, the flat region 52 will be described. As shown in FIG. 6, the flat region 52 is located on the second surface 51b of the metal plate 51. The thickness T2 of the flat region 52 may be the same as the thickness T1 of the metal plate 51. For example, T2 / T1, which is the ratio of the thickness T1 to the thickness T2, may be 0.95 or more and 1.05 or less. The thickness T1 of the metal plate 51 is the thickness of a region of the deposition mask 20 where the first recesses 30 and the second recesses 35 are not formed, such as the peripheral region 23.

[0083] The thickness T1 of the metal plate 51 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. The thickness T1 of the metal plate 51 may be, for example, 20 μm or less, 25 μm or less, 30 μm or less, or 50 μm or less. The range of the thickness T1 of the metal plate 51 may be defined by a first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm, and / or a second group consisting of 20 μm, 25 μm, 30 μm, and 50 μm. The range of the thickness T1 of the metal plate 51 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T1 of the metal plate 51 may be defined by a combination of any two of the values ​​included in the first group. The range of the thickness T1 of the metal plate 51 may be determined by a combination of any two of the values ​​included in the second group described above. For example, it may be 8 μm or more and 50 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 13 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 10 μm or more and 13 μm or less, 13 μm or more and 50 μm or less, or 1 It may be 3 μm or more and 30 μm or less, 13 μm or more and 25 μm or less, 13 μm or more and 20 μm or less, 13 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or more and 25 μm or less, 25 μm or more and 50 μm or less, 25 μm or more and 30 μm or more and 30 μm or more and 50 μm or less.

[0084] Setting the thickness T1 of the metal plate 51 to 50 μm or less can prevent the deposition material 98 from adhering to the first wall surface 31 or the second wall surface 36 of the through-hole 25 before passing through the through-hole 25. This can improve the utilization efficiency of the deposition material 98. Setting the thickness T1 of the metal plate 51 to 8 μm or more can ensure the strength of the deposition mask 20 and prevent damage or deformation of the deposition mask 20.

[0085] As shown in FIG. 7, a portion of the second surface 51b located between two adjacent through holes 25 in the second direction D2 is denoted by the reference symbol 57 and is referred to as a connecting portion. In this embodiment, the connecting portion 57 is a non-flat region. For example, the maximum thickness T3 of the connecting portion 57 is smaller than the thickness T1 of the metal plate 51. As shown in FIG. 7, the surface of the connecting portion 57 on the second surface 51b side may be curved so as to be convex toward the second surface 51b side in a cross-sectional view.

[0086] The ratio of the maximum thickness T3 of the connecting portion 57 to the thickness T1 of the metal plate 51 may be, for example, 0.10 or more, 0.30 or more, 0.50 or more, or 0.60 or more. T3 / T1 may be, for example, 0.70 or less, 0.80 or less, 0.90 or less, or 0.97 or less. The range of T3 / T1 may be defined by a first group consisting of 0.10, 0.30, 0.50, and 0.60, and / or a second group consisting of 0.70, 0.80, 0.90, and 0.97. The range of T3 / T1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T3 / T1 may be defined by a combination of any two of the values ​​included in the first group. The range of T3 / T1 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.10 or more and 0.97 or less, 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.30 or less, 0.30 or more and 0.97 or less, 0.30 or more and 0.90 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.50 or less, or 0.50 or more and 0.97 or less. Alternatively, it may be 0.50 or more and 0.90 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.70 or less, 0.50 or more and 0.60 or less, 0.60 or more and 0.97 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, 0.60 or more and 0.70 or less, 0.70 or more and 0.97 or less, 0.70 or more and 0.90 or less, 0.70 or more and 0.80 or less, 0.80 or more and 0.90 or less, or 0.90 or more and 0.97 or less.

[0087] The thicknesses T1, T2, and T3 are calculated by observing a cross section of the deposition mask 20 using a scanning electron microscope. For example, the thicknesses T1 and T2 are calculated by measuring the thicknesses T1 and T2 at five positions on a sample of the deposition mask 20 including the effective region 22 and the peripheral region 23 and a cross section cut along the first direction D1, and averaging the measured values. The thickness T3 is calculated by measuring the thickness T3 at five positions on a sample of the deposition mask 20 including the flat region 52 and a cross section cut along the second direction D2, and averaging the measured values. A ZEISS ULTRA55 scanning electron microscope can be used as the scanning electron microscope.

[0088] Fig. 8 is a cross-sectional view of the deposition mask of Fig. 5A taken along line CC, which extends in the second direction D2 and passes through the flat region 52. In the cross-sectional view of Fig. 8, the connecting portion 57 overlaps with the depression 52a between two flat regions 52 adjacent to each other in the second direction D2.

[0089] Next, the shape of the flat region 52 in a plan view will be further described with reference to Fig. 5A and Fig. 9. Fig. 9 is an enlarged plan view showing the first flat region 53 and the second flat region 54 in Fig. 5A.

[0090] 5A, the first flat region 53 may include a portion in which a dimension E1 increases with increasing distance upward from the first center line L1. The dimension E1 is the dimension of the first flat region 53 in the first direction D1. The second flat region 54 may include a portion in which a dimension E2 increases with increasing distance downward from the first center line L1. The dimension E2 is the dimension of the second flat region 54 in the first direction D1. For example, as shown in FIG. 5A, the portion of the outline of the flat region 52 facing the through hole 25 in the first direction D1 may be curved so as to recess toward the center of the flat region 52.

[0091] 5A, the flat region 52 may include a portion in which a dimension G1 increases with increasing distance from the third center line L3 in the first direction D1. The dimension G1 is the dimension of the flat region 52 in the third direction D3. For example, as shown in FIG. 5A, the portion of the outline of the flat region 52 facing the through hole 25 in the third direction D3 may be curved so as to recess toward the center of the flat region 52. The third center line L3 is a straight line that passes through the midpoint C2 between two adjacent through holes 25 in the first direction D1 and extends in the third direction D3.

[0092] In FIG. 9, symbol P1 represents the dimension in the first direction D1 of a portion of the first flat region 53 that overlaps with the first center line L1. Symbol P2 represents the distance in the first direction D1 between ends Pa and Pb of a pair of first contours 53a of the first flat region 53. The ends Pa and Pb are located away from the first center line L1. The first contours 53a are portions of the contours of the first flat region 53 that face the through hole 25 in the first direction D1. As shown in FIG. 9, dimension P1 may be smaller than distance P2.

[0093] The ratio of dimension P1 to distance P2 may be, for example, 0.01 or greater, 0.10 or greater, 0.30 or greater, or 0.45 or greater. P1 / P2 may be, for example, 0.60 or less, 0.70 or less, 0.80 or less, or 0.90 or less. The range of P1 / P2 may be defined by a first group consisting of 0.01, 0.10, 0.30, and 0.45, and / or a second group consisting of 0.60, 0.70, 0.80, and 0.90. The range of P1 / P2 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of P1 / P2 may be defined by a combination of any two of the values ​​included in the first group. The range of P1 / P2 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.01 or more and 0.90 or less, 0.01 or more and 0.80 or less, 0.01 or more and 0.70 or less, 0.01 or more and 0.60 or less, 0.01 or more and 0.45 or less, 0.01 or more and 0.30 or less, 0.01 or more and 0.10 or less, 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.45 or less, 0.10 or more and 0.30 or less, or 0.30 or more and 0.90 or less. Alternatively, it may be 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.45 or less, 0.45 or more and 0.90 or less, 0.45 or more and 0.80 or less, 0.45 or more and 0.70 or less, 0.45 or more and 0.60 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, 0.60 or more and 0.70 or less, 0.70 or more and 0.90 or less, 0.70 or more and 0.80 or less, or 0.80 or more and 0.90 or less.

[0094] In FIG. 9, reference symbol P3 represents the dimension in the first direction D1 of the portion of the second flat region 54 that overlaps with the first center line L1. Reference symbol P4 represents the distance in the first direction D1 between ends Pc and Pd of a pair of first contours 54a of the second flat region 54. The ends Pc and Pd are located away from the first center line L1. The first contours 54a are portions of the contours of the second flat region 54 that face the through hole 25 in the first direction D1. When the first flat region 53 and the second flat region 54 are continuous, the dimension P3 of the second flat region 54 is equal to the dimension P1 of the first flat region 53 described above.

[0095] The numerical range of the ratio of the dimension P3 to the distance P4 in the second flat region 54 is the same as the numerical range of the ratio of the dimension P1 to the distance P2 in the first flat region 53, and therefore description thereof will be omitted.

[0096] In FIG. 9, the symbol Q1 represents the dimension in the third direction D3 of the portion of the flat region 52 that overlaps with the third center line L3. The symbol Q2 represents the distance in the third direction D3 between the ends Qa and Qb of a pair of second contours 52b of the flat region 52, including the first flat region 53 and the second flat region 54. The ends Qa and Qb are located away from the first center line L1. The second contours 52b are portions of the contours of the flat region 52 that face the through hole 25 in the third direction D3. As shown in FIG. 9, the dimension Q1 may be smaller than the distance Q2. Alternatively, as described below, the dimension Q1 may be the same as the distance Q2.

[0097] The ratio of the dimension Q1 to the distance Q2 may be, for example, 0.30 or more, 0.40 or more, 0.50 or more, or 0.60 or more. Q1 / Q2 may be, for example, 0.70 or less, 0.80 or less, 0.90 or less, or 1.00 or less. The range of Q1 / Q2 may be defined by a first group consisting of 0.30, 0.40, 0.50, and 0.60 and / or a second group consisting of 0.70, 0.80, 0.90, and 1.00. The range of Q1 / Q2 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of Q1 / Q2 may be defined by a combination of any two of the values ​​included in the first group described above. The range of Q1 / Q2 may be defined by a combination of any two of the values ​​included in the second group described above. For example, it may be 0.30 or more and 1.00 or less, 0.30 or more and 0.90 or less, 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.50 or less, 0.30 or more and 0.40 or less, 0.40 or more and 1.00 or less, 0.40 or more and 0.90 or less, 0.40 or more and 0.80 or less, 0.40 or more and 0.70 or less, 0.40 or more and 0.60 or less, 0.40 or more and 0.50 or less, or 0.50 or more and 1.00 or less. Alternatively, it may be 0.50 or more and 0.90 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.70 or less, 0.50 or more and 0.60 or less, 0.60 or more and 1.00 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, 0.60 or more and 0.70 or less, 0.70 or more and 1.00 or less, 0.70 or more and 0.90 or less, 0.70 or more and 0.80 or less, 0.80 or more and 1.00 or less, 0.80 or more and 0.90 or less, or 0.90 or more and 1.00 or less.

[0098] The dimension Q1 may be greater than the dimension P1. That is, the flat region 52 may have a shape extending in the third direction D3. The ratio of the dimension Q1 to the dimension P1, Q1 / P1, may be, for example, 1.05 or more, 1.2 or more, 1.5 or more, or 2.0 or more. Q1 / P1 may be, for example, 2.5 or less, 5.0 or less, 10 or less, or 50 or less. The range of Q1 / P1 may be defined by a first group consisting of 1.05, 1.2, 1.5, and 2.0, and / or a second group consisting of 2.5, 5.0, 10, and 50. The range of Q1 / P1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of Q1 / P1 may be defined by a combination of any two of the values ​​included in the first group. The range of Q1 / P1 may be determined by a combination of any two of the values ​​included in the second group described above. For example, it may be 1.05 or more and 50 or less, 1.05 or more and 10 or less, 1.05 or more and 5.0 or less, 1.05 or more and 2.5 or less, 1.05 or more and 2.0 or less, 1.05 or more and 1.5 or less, 1.05 or more and 1.2 or less, 1.2 or more and 50 or less, 1.2 or more and 10 or less, 1.2 or more and 5.0 or less, 1.2 or more and 2.5 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.5 or less, or 1.5 or more and 5. It may be 0 or less, 1.5 or more and 10 or less, 1.5 or more and 5.0 or less, 1.5 or more and 2.5 or less, 1.5 or more and 2.0 or less, 2.0 or more and 50 or less, 2.0 or more and 10 or less, 2.0 or more and 5.0 or less, 2.0 or more and 2.5 or less, 2.5 or more and 50 or less, 2.5 or more and 10 or less, 2.5 or more and 5.0 or less, 5.0 or more and 50 or less, 5.0 or more and 10 or less, or 10 or more and 50 or less.

[0099] The dimension Q2 may be greater than the dimension P2. The range of values ​​for Q2 / P2, which is the ratio of the dimension Q2 to the dimension P2, can be the same as the range of values ​​for Q1 / P1 described above. The dimension Q2 being greater than the dimension P2 means that the flat region 52 has a shape that extends in the third direction D3, as in the cases of the dimensions Q1 and P1.

[0100] The third direction D3 may coincide with the mask first direction N1. For example, the angle formed between the third direction D3 and the mask first direction N1 may be 5.0 degrees or less, 3.0 degrees or less, 1.0 degrees or less, 0.5 degrees or less, or 0.1 degrees or less. The mask first direction N1 may be determined based on the direction in which the side edge 17c of the deposition mask 20 extends. When the deposition mask 20 includes two alignment marks aligned along the side edge 17c, the mask first direction N1 may be determined based on the direction in which a straight line passing through the centers of the two alignment marks extends.

[0101] The fact that the third direction D3 coincides with the mask first direction N1 means that the length direction of the flat region 52 coincides with the length direction of the deposition mask 20. Tension may be applied to the deposition mask 20 fixed to the frame 15 in the length direction. When the length direction of the flat region 52 coincides with the length direction of the deposition mask 20, it is possible to suppress changes in the shape of the flat region 52 in a plan view due to tension. This makes it possible to suppress, for example, wrinkles and the like from occurring in the deposition mask 20 due to tension.

[0102] The greater the ratio of the area of ​​the flat region 52 to the area of ​​the effective region 22, the stronger the deposition mask 20. The stronger the deposition mask 20, the easier it is to perform processes using the deposition mask 20. For example, deformation or damage to the deposition mask 20 during transportation can be suppressed. On the other hand, the greater the ratio of the area of ​​the flat region 52 to the area of ​​the effective region 22, the more likely shadows are to occur. The dimensions P1, P2, Q1, Q2, etc. of the flat region 52 are determined taking strength and shadows into consideration. Examples of the relationship between the dimensions of the flat region 52 and other dimensions are described below.

[0103] 5A are greater, the shadow is suppressed more, but the strength of the deposition mask 20 decreases. The dimensions of the flat region 52 may be determined taking these distances into consideration.

[0104] The ratio U2 / Q1 of the distance U2 to the dimension Q1 may be, for example, 0.05 or more, 0.15 or more, 0.3 or more, or 0.5 or more. U2 / Q1 may be, for example, 0.8 or less, 1.0 or less, 1.2 or less, or 1.5 or less. The range of U2 / Q1 may be defined by a first group consisting of 0.05, 0.15, 0.3, and 0.5, and / or a second group consisting of 0.8, 1.0, 1.2, and 1.5. The range of U2 / Q1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U2 / Q1 may be defined by a combination of any two of the values ​​included in the first group. The range of U2 / Q1 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.05 or more and 1.5 or less, 0.05 or more and 1.2 or less, 0.05 or more and 1.0 or less, 0.05 or more and 0.8 or less, 0.05 or more and 0.5 or less, 0.05 or more and 0.3 or less, 0.05 or more and 0.15 or less, 0.15 or more and 1.5 or less, 0.15 or more and 1.2 or less, 0.15 or more and 1.0 or less, 0.15 or more and 0.8 or less, 0.15 or more and 0.5 or less, 0.15 or more and 0.3 or less, or 0.3 or more and 1. It may be 0.5 or less, 0.3 to 1.2 or less, 0.3 to 1.0 or less, 0.3 to 0.8 or less, 0.3 to 0.5 or less, 0.5 to 1.5 or less, 0.5 to 1.2 or less, 0.5 to 1.0 or less, 0.5 to 0.8 or less, 0.8 to 1.5 or less, 0.8 to 1.2 or less, 0.8 to 1.0 or less, 1.0 to 1.5 or less, 1.0 to 1.2 or less, 1.2 to 1.5 or less.

[0105] The range of values ​​of U2 / Q2, which is the ratio of the distance U2 to the dimension Q2, can be the range of values ​​of U2 / Q1 described above.

[0106] The ratio U3 / Q1 of the distance U3 to the dimension Q1 may be, for example, 0.02 or more, 0.05 or more, 0.10 or more, or 0.20 or more. U3 / Q1 may be, for example, 0.30 or less, 0.50 or less, 0.70 or less, or 1.00 or less. The range of U3 / Q1 may be defined by a first group consisting of 0.02, 0.05, 0.10, and 0.20, and / or a second group consisting of 0.30, 0.50, 0.70, and 1.00. The range of U3 / Q1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of U3 / Q1 may be defined by a combination of any two of the values ​​included in the first group. The range of U3 / Q1 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.02 or more and 1.00 or less, 0.02 or more and 0.70 or less, 0.02 or more and 0.50 or less, 0.02 or more and 0.30 or less, 0.02 or more and 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 1.00 or less, 0.05 or more and 0.70 or less, 0.05 or more and 0.50 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, or 0.10 or more and 1.00 or less. Alternatively, it may be 0.10 or more and 0.70 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.20 or more and 1.00 or less, 0.20 or more and 0.70 or less, 0.20 or more and 0.50 or less, 0.20 or more and 0.30 or less, 0.30 or more and 1.00 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.50 or less, 0.50 or more and 1.00 or less, 0.50 or more and 0.70 or less, or 0.70 or more and 1.00 or less.

[0107] The range of values ​​of U3 / Q2, which is the ratio of the distance U3 to the dimension Q2, can be the range of values ​​of U3 / Q1 described above.

[0108] 5A are larger, the effect of the shadow is smaller, but the strength of the deposition mask 20 is lower. The dimensions of the flat region 52 may be determined taking into consideration the dimensions of the through-hole.

[0109] The ratio of dimension S3 to dimension Q1, S3 / Q1, may be, for example, 0.5 or more, 0.6 or more, 0.7 or more, or 0.8 or more. S3 / Q1 may be, for example, 1.0 or less, 1.2 or less, 1.5 or less, or 2.0 or less. The range of S3 / Q1 may be defined by a first group consisting of 0.5, 0.6, 0.7, and 0.8 and / or a second group consisting of 1.0, 1.2, 1.5, and 2.0. The range of S3 / Q1 may be defined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above. The range of S3 / Q1 may be defined by a combination of any two of the values ​​included in the first group described above. The range of S3 / Q1 may be defined by a combination of any two of the values ​​included in the second group described above. For example, it may be 0.5 or more and 2.0 or less, 0.5 or more and 1.5 or less, 0.5 or more and 1.2 or less, 0.5 or more and 1.0 or less, 0.5 or more and 0.8 or less, 0.5 or more and 0.7 or less, 0.5 or more and 0.6 or less, 0.6 or more and 2.0 or less, 0.6 or more and 1.5 or less, 0.6 or more and 1.2 or less, 0.6 or more and 1.0 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 2.0 or less. Alternatively, it may be 0.7 or more and 1.5 or less, 0.7 or more and 1.2 or less, 0.7 or more and 1.0 or less, 0.7 or more and 0.8 or less, 0.8 or more and 2.0 or less, 0.8 or more and 1.5 or less, 0.8 or more and 1.2 or less, 0.8 or more and 1.0 or less, 1.0 or more and 2.0 or less, 1.0 or more and 1.5 or less, 1.0 or more and 1.2 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.5 or less, or 1.5 or more and 2.0 or less.

[0110] The range of values ​​for S3 / Q2, which is the ratio of the dimension S3 to the dimension Q2, can be the range of values ​​for S3 / Q1 described above.

[0111] The above-mentioned dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, U3, etc. are calculated by observing the deposition mask 20 from the second surface 51b side using a laser microscope. For example, the dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, and U3 are calculated by measuring the dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, and U3 at five points on a sample of the deposition mask 20 including the effective area 22 and calculating the average value. The laser microscope and observation conditions used are as follows. Laser microscope: Keyence VK-X250 Laser light: Blue (wavelength 408nm) Objective lens: 50x Optical zoom: 1.0x Measurement mode: Surface profile ·Measurement quality: fast Uses Real Peak Detection (RPD) function

[0112] Next, a method for manufacturing the deposition mask 20 by processing the metal plate 51 will be described mainly with reference to FIGS. 10 to 15 . FIG. 10 is a diagram showing a manufacturing apparatus 70 for manufacturing the deposition mask 20 using the metal plate 51. First, a wound body 50 including the metal plate 51 wound around a shaft member 51x is prepared. Next, the metal plate 51 of the wound body 50 is unwound from the shaft member 51x, and the metal plate 51 is sequentially transported to a resist film forming apparatus 71, an exposure / developing apparatus 72, an etching apparatus 73, a film stripping apparatus 74, and a separation apparatus 75 shown in FIG. 10 . FIG. 10 shows an example in which the metal plate 51 moves between the apparatuses by being transported in its length direction T, but the present invention is not limited thereto. For example, the metal plate 51 provided with a resist layer may be rewound around the shaft member 51x in the resist film forming apparatus 71, and then the wound metal plate 51 may be supplied to the exposure / developing apparatus 72. The metal sheet 51 provided with the resist layer that has been exposed and developed in the exposure and development device 72 may be rewound around the shaft member 51x, and the wound metal sheet 51 may then be supplied to the etching device 73. The metal sheet 51 that has been etched in the etching device 73 may be rewound around the shaft member 51x, and the wound metal sheet 51 may then be supplied to the film stripping device 74. The metal sheet 51 from which the resin 58 and the like, which will be described later, has been removed may be rewound around the shaft member 51x in the film stripping device 74, and the wound metal sheet 51 may then be supplied to the separation device 75.

[0113] The resist film forming device 71 provides a resist layer on the first and second surfaces of the metal plate 51. The exposure / development device 72 performs exposure processing and development processing on the resist layer, thereby patterning the resist layer.

[0114] The etching device 73 etches the metal plate 51 using the patterned resist layer as a mask to form through holes 25 in the metal plate 51. In the present embodiment, a large number of through holes 25 corresponding to a plurality of deposition masks 20 are formed in the metal plate 51. In other words, a plurality of deposition masks 20 are allocated to the metal plate 51. For example, a large number of through holes 25 are formed in the metal plate 51 so that a plurality of effective areas 22 are aligned in the width direction of the metal plate 51 and a plurality of effective areas 22 for a plurality of deposition masks 20 are aligned in the length direction of the metal plate 51. The film stripping device 74 strips off components provided to protect portions of the metal plate 51 that are not to be etched from the etching solution, such as the resist pattern and a resin 58 described later.

[0115] The separating device 75 performs a separating step of separating a portion of the metal plate 51 in which a plurality of through holes 25 corresponding to one deposition mask 20 are formed from the metal plate 51. In this manner, the deposition mask 20 can be obtained.

[0116] Each step of the method for manufacturing the deposition mask 20 will be described in detail.

[0117] First, a wound body 50 including a metal plate 51 wound around a shaft member 51x is prepared. The thickness of the metal plate 51 is, for example, 5 μm or more and 50 μm or less. A rolling method, a plating film formation method, or the like can be used to manufacture the metal plate 51 having a desired thickness.

[0118] The metal plate 51 may be, for example, a metal plate made of an iron alloy containing nickel. The iron alloy constituting the metal plate may further contain cobalt in addition to nickel. For example, the material of the metal plate 51 may be an iron alloy having a total nickel and cobalt content of 30% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less. Specific examples of iron alloys containing nickel or nickel and cobalt include Invar material containing 34% by mass or more and 38% by mass or less of nickel, Super Invar material containing 30% by mass or more and 34% by mass or less of nickel and further containing cobalt, and low-thermal expansion Fe—Ni-based plated alloys containing 38% by mass or more and 54% by mass or less of nickel.

[0119] Next, using a resist film forming device 71, a first-side resist layer 61 is formed on the first surface 51a of the metal plate 51 unwound from the unwinding device, and a second-side resist layer 62 is formed on the second surface 51b. For example, the first-side resist layer 61 and the second-side resist layer 62 are formed by attaching a dry film containing a photosensitive resist material such as an acrylic photocurable resin to the first surface 51a and the second surface 51b of the metal plate 51. Alternatively, the first-side resist layer 61 and the second-side resist layer 62 may be formed by applying a coating liquid containing a negative photosensitive resist material to the first surface 51a and the second surface 51b of the metal plate 51 and drying the coating liquid.

[0120] The thickness of the resist layers 61, 62 may be, for example, 1 μm or more, 3 μm or more, 5 μm or more, or 7 μm or more. The thickness of the resist layers 61, 62 may be, for example, 10 μm or less, 15 μm or less, 20 μm or less, or 25 μm or less. The thickness range of the resist layers 61, 62 may be defined by a first group consisting of 1 μm, 3 μm, 5 μm, and 7 μm and / or a second group consisting of 10 μm, 15 μm, 20 μm, and 25 μm. The thickness range of the resist layers 61, 62 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The thickness range of the resist layers 61, 62 may be defined by a combination of any two of the values ​​included in the first group. The thickness range of the resist layers 61, 62 may be determined by a combination of any two of the values ​​included in the second group described above. For example, the thickness range may be 1 μm to 25 μm, 1 μm to 20 μm, 1 μm to 15 μm, 1 μm to 10 μm, 1 μm to 7 μm, 1 μm to 5 μm, 1 μm to 3 μm, 3 μm to 25 μm, 3 μm to 20 μm, 3 μm to 15 μm, 3 μm to 10 μm, 3 μm to 7 μm, 3 μm to 5 μm, 5 μm to 25 μm, or 5 μm. It may be 5 μm or more and 20 μm or less, 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 5 μm or more and 7 μm or less, 7 μm or more and 25 μm or less, 7 μm or more and 20 μm or less, 7 μm or more and 15 μm or less, 7 μm or more and 10 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, or 20 μm or more and 25 μm or less.

[0121] Subsequently, the resist layers 61 and 62 are exposed and developed using an exposure / development device 72. Fig. 12 is a cross-sectional view showing the resist layers 61 and 62 patterned by exposure and development.

[0122] Next, the metal plate 51 is etched using an etching device 73 with the resist layers 61 and 62 as a mask. Specifically, a first-side etching step is first performed. As shown in FIG. 13 , the first-side etching step involves etching, using a first etching liquid, an area of ​​the first side 51a of the metal plate 51 that is not covered by the first-side resist layer 61. For example, the first etching liquid is sprayed toward the first side 51a of the metal plate 51 through the first-side resist layer 61 from a nozzle disposed on the side facing the first side 51a of the transported metal plate 51. At this time, the second side 51b of the metal plate 51 may be covered with a film or the like that is resistant to the first etching liquid.

[0123] 13, as a result of the first-surface etching step, the first etching liquid erodes the areas of the metal plate 51 that are not covered with the first-surface resist layer 61. As a result, a large number of first recesses 30 are formed on the first surface 51a of the metal plate 51. As the first etching liquid, for example, one containing a ferric chloride solution and hydrochloric acid is used.

[0124] Next, as shown in FIG. 14, a second-side etching step is performed. The second-side etching step involves etching the areas of the second surface 51b of the metal plate 51 that are not covered by the second-side resist layer 62 using a second etching solution. This forms second recesses 35 on the second surface 51b of the metal plate 51. The second-side etching step is performed until the first recesses 30 and the second recesses 35 communicate with each other, thereby forming through-holes 25. As with the first etching solution described above, the second etching solution may contain, for example, a ferric chloride solution and hydrochloric acid. During etching of the second surface 51b, the first recesses 30 may be covered with a resin 58 that is resistant to the second etching solution, as shown in FIG. 14.

[0125] The second-side etching step may be performed so that a portion of the second surface 51b of the metal plate 51 remains between two second recesses 35 adjacent to each other in a specific direction, as shown in Fig. 14. For example, the second-side etching step may be performed so that a portion of the second surface 51b of the metal plate 51 remains between two second recesses 35 adjacent to each other in the first direction D1. This makes it possible to obtain a flat region 52 located between two through holes 25 adjacent to each other in the first direction D1, as shown in Fig. 6 above. The second-side etching step may be performed so that the first flat region 53 and the second flat region 54 of the flat region 52 are continuous with each other.

[0126] The two-side etching step may be performed so that no second surface 51b remains between two second recesses 35 adjacent to each other in a specific direction, as shown in Fig. 15. For example, the second-side etching step may be performed so that no second surface 51b remains between two second recesses 35 adjacent to each other in the second direction D2. This makes it possible to obtain a non-flat connecting portion 57 located between two through holes 25 adjacent to each other in the second direction D2, as shown in Fig. 7 above.

[0127] Next, a film stripping process is performed using a film stripping device 74 to remove the resin 58 and the resist layers 61 and 62 from the metal plate 51. Next, a separation process is performed using a separation device 75 to separate from the metal plate 51 a portion of the metal plate 51 in which a plurality of through holes 25 corresponding to one vapor deposition mask 20 are formed. In this manner, the vapor deposition mask 20 can be obtained.

[0128] In the deposition mask 20 of the present embodiment, as described above, the dimension E1 of the first flat region 53 and the dimension E2 of the second flat region 54 in the first direction D1 increase with increasing distance from the first center line L1. Such a structure is realized by appropriately adjusting the shapes of the resist layers 61 and 62 in a plan view and the etching conditions. Examples of the etching conditions include temperature, time, and the composition of the etching solution.

[0129] Next, a method for manufacturing an organic EL display device 100 using the deposition mask 20 according to this embodiment will be described. The method for manufacturing the organic EL display device 100 includes a deposition step of depositing a deposition material 98 onto a substrate 110 using the deposition mask 20. In the deposition step, first, the deposition mask device 10 is positioned so that the deposition mask 20 faces the substrate 110. At this time, a magnet 93 may be used to bring the deposition mask 20 into close contact with the substrate 110. The interior of the deposition device 90 is also evaporated. In this state, the deposition material 98 is evaporated and caused to fly to the substrate 110 through the deposition mask 20, thereby adhering the deposition material 98 to the substrate 110 in a pattern corresponding to the through-holes 25 of the deposition mask 20, thereby forming a deposition layer.

[0130] In the deposition mask 20 of this embodiment, the first flat region 53 and the second flat region 54 include portions in which the dimensions E1 and E2 increase with increasing distance from the first center line L1. This prevents the deposition material 98, which has a velocity component in the first direction D1 and moves in a direction inclined relative to the normal direction of the metal plate 51, from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. This prevents shadows from being generated around the first contours 42a of the through holes 25. By increasing the dimensions E1 and E2 at positions away from the first center line L1, the area of ​​the flat region 52 can be increased compared to when the dimensions E1 and E2 are constant regardless of position. This increases the strength of the deposition mask 20, thereby preventing the deposition mask 20 from being damaged during transportation, etc.

[0131] In the deposition mask 20 of the present embodiment, a non-flat connecting portion 57 exists between two adjacent through holes 25 in the second direction D2. In other words, two adjacent through holes 25 in the second direction D2 are connected to each other. This makes it possible to prevent the deposition material 98, which has a velocity component in the second direction D2 and moves in a direction inclined with respect to the normal direction of the metal plate 51, from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. This makes it possible to prevent a shadow from being generated around the second contour 42b of the through hole 25.

[0132] Various modifications can be made to the embodiment described above. Other embodiments will be described below with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the embodiment described above will be designated by the same reference numerals as those used for the corresponding parts in the embodiment described above, and duplicated descriptions will be omitted. If it is clear that the effects obtained in the embodiment described above can also be obtained in other embodiments, the descriptions thereof may be omitted.

[0133] FIG. 16 is a plan view showing an example of the flat region 52 on the second surface 51b side of the deposition mask 20. In the above-described embodiment, an example has been shown in which the dimension Q1 of the flat region 52 is smaller than the distance Q2 between the ends Qa and Qb of the flat region 52. However, this is not limited thereto, and as shown in FIG. 16, the dimension Q1 may be equal to the distance Q2. For example, the second contour 52b may extend linearly along the first direction D1. In this case, Q1 / Q2 is 1.00.

[0134] 16 , as in the above-described embodiment, the deposition mask 20 including the flat region 52 may also include a portion in which the dimension E1 increases with increasing distance upward from the first center line L1. The second flat region 54 may also include a portion in which the dimension E2 increases with increasing distance downward from the first center line L1. This prevents the deposition material 98, which has a velocity component in the first direction D1 and moves in a direction inclined relative to the normal direction of the metal plate 51, from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. This prevents shadows from being generated around the first contour 42a of the through hole 25. By increasing the dimensions E1 and E2 of the first flat region 53 and the second flat region 54 in the first direction D1 at positions away from the first center line L1, the area of ​​the flat region 52 can be increased compared to when the dimensions E1 and E2 are constant regardless of position. This increases the strength of the deposition mask 20, thereby preventing the deposition mask 20 from being damaged during transportation.

[0135] FIG. 17 is a plan view showing an example of the flat region 52 on the second surface 51b side of the deposition mask 20. In the above-described embodiment, the example in which the first flat region 53 and the second flat region 54 are continuous in the third direction D3 has been described. However, this is not limiting, and as shown in FIG. 17, the first flat region 53 and the second flat region 54 may be discontinuous in the third direction D3. That is, a non-flat region may exist between the first flat region 53 and the second flat region 54. For example, as shown in FIG. 17, a region overlapping the first center line L1 between the first flat region 53 and the second flat region 54 may be the non-flat region.

[0136] 17, as in the above-described embodiment, the first flat region 53 may include a portion in which the dimension E1 increases with increasing distance upward from the first center line L1, and the second flat region 54 may include a portion in which the dimension E2 increases with increasing distance downward from the first center line L1.

[0137] 17, the second-side etching step is performed so that the first flat region 53 and the second flat region 54 are discontinuous. For example, the time for the second-side etching step may be increased compared to the above-described embodiment. The dimension of the second-side resist layer 62 in the first direction D1 may be reduced compared to the above-described embodiment.

[0138] 17 , the deposition mask 20 including the flat region 52 can also prevent the deposition material 98, which has a velocity component in the first direction D1 and moves in a direction inclined relative to the normal direction of the metal plate 51, from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. This prevents shadows from being generated around the first contours 42a of the through holes 25. By increasing the dimensions E1 and E2 at positions away from the first center line L1, the area of ​​the flat region 52 can be increased compared to when the dimensions E1 and E2 are constant regardless of position. This increases the strength of the deposition mask 20, thereby preventing the deposition mask 20 from being damaged during transportation, etc.

[0139] 18 is a plan view showing an example of the effective area 22 of the deposition mask 20 as viewed from the second surface 51b side. In the above-described embodiment, an example has been described in which no flat region 52 exists between two adjacent through holes 25 in the second direction D2. However, this is not limited thereto. As shown in FIG. 18, the deposition mask 20 may include a third flat region 55 located between two adjacent through holes 25 in the second direction D2. That is, two adjacent through holes 25 in the second direction D2 may not be connected. The deposition mask 20 may include a fourth flat region 56 located between two adjacent through holes 25 in the fourth direction D4.

[0140] 18, as in the above-described embodiment, the first flat region 53 may include a portion in which the dimension E1 increases with increasing distance upward from the first center line L1, and the second flat region 54 may include a portion in which the dimension E2 increases with increasing distance downward from the first center line L1.

[0141] 18, the first flat region 53 and the second flat region 54 may be continuous in the third direction D3. Alternatively, although not shown, the first flat region 53 and the second flat region 54 may be discontinuous in the third direction D3.

[0142] Fig. 19 is an example of a cross-sectional view taken along line DD of the deposition mask 20 in Fig. 18. Fig. 20 is a plan view showing the flat region 52 in Fig. 18. The third flat region 55 may extend in the second direction D2 so as to connect the first flat region 53 and the second flat region 54 that are adjacent in the second direction D2. Similarly, the fourth flat region 56 may extend in the fourth direction D4 so as to connect the first flat region 53 and the second flat region 54 that are adjacent in the fourth direction D4.

[0143] In FIG. 20 , the symbol R1 represents the dimension in the second direction D2 of a portion of the third flat region 55 that overlaps with the second center line L2. The second center line L2 is a straight line that passes through the center points C1 of two adjacent through holes 25 in the second direction D2. The dimension R1 of the third flat region 55 may be smaller than the dimension P1 of the first flat region 53. This can prevent the deposition material 98, which has a velocity component in the second direction D2 and moves in a direction inclined with respect to the normal direction of the metal plate 51, from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. This can prevent a shadow from being generated around the second contour 42b of the through hole 25.

[0144] The ratio of dimension R1 to dimension P1 may be, for example, 0.01 or more, 0.10 or more, 0.30 or more, or 0.45 or more. R1 / P1 may be, for example, 0.60 or less, 0.70 or less, 0.80 or less, or 0.90 or less. The range of R1 / P1 may be defined by a first group consisting of 0.01, 0.10, 0.30, and 0.45, and / or a second group consisting of 0.60, 0.70, 0.80, and 0.90. The range of R1 / P1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of R1 / P1 may be defined by a combination of any two of the values ​​included in the first group. The range of R1 / P1 may be defined by a combination of any two of the values ​​included in the second group. For example, it may be 0.01 or more and 0.90 or less, 0.01 or more and 0.80 or less, 0.01 or more and 0.70 or less, 0.01 or more and 0.60 or less, 0.01 or more and 0.45 or less, 0.01 or more and 0.30 or less, 0.01 or more and 0.10 or less, 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.45 or less, 0.10 or more and 0.30 or less, or 0.30 or more and 0.90 or less. Alternatively, it may be 0.30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.45 or less, 0.45 or more and 0.90 or less, 0.45 or more and 0.80 or less, 0.45 or more and 0.70 or less, 0.45 or more and 0.60 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, 0.60 or more and 0.70 or less, 0.70 or more and 0.90 or less, 0.70 or more and 0.80 or less, or 0.80 or more and 0.90 or less.

[0145] In FIG. 20 , the symbol R2 represents the dimension in the fourth direction D4 of the portion of the fourth flat region 56 that overlaps with the fourth center line L4. The fourth center line L4 is a straight line that passes through the center points C1 of two adjacent through holes 25 in the fourth direction D4. The dimension R2 of the fourth flat region 56 may be smaller than the dimension P1 of the first flat region 53. This makes it possible to prevent the deposition material 98, which has a velocity component in the fourth direction D4 and moves in a direction inclined with respect to the normal direction of the metal plate 51, from adhering to the connecting portion 57 or the second wall surface 36 of the second recess 35. This makes it possible to prevent a shadow from being generated around the second contour 42b of the through hole 25.

[0146] The numerical range of the ratio of the dimension R2 to the dimension P1 is the same as the numerical range of the ratio of the dimension R1 to the dimension P1, and therefore the explanation will be omitted.

[0147] 18 , the deposition mask 20 including the flat region 52 can also prevent the deposition material 98, which has a velocity component in the first direction D1 and moves in a direction inclined relative to the normal direction of the metal plate 51, from adhering to the flat region 52 or the second wall surface 36 of the second recess 35. This prevents shadows from being generated around the first contours 42a of the through holes 25. By increasing the dimensions E1 and E2 of the first flat region 53 and the second flat region 54 in the first direction D1 at positions away from the first center line L1, the area of ​​the flat region 52 can be increased compared to when the dimensions E1 and E2 are constant regardless of position. This increases the strength of the deposition mask 20, thereby preventing the deposition mask 20 from being damaged during transportation, etc.

[0148] Because the dimension R1 of the third flat region 55 is smaller than the dimension P1 of the first flat region 53, the deposition material 98, which has a velocity component in the second direction D2 and moves in a direction inclined with respect to the normal direction of the metal plate 51, can be prevented from adhering to the third flat region 55 or the second wall surface 36 of the second recess 35. This can prevent a shadow from being generated around the first contour 42a of the through hole 25. This can prevent a shadow from being generated around the second contour 42b of the through hole 25.

[0149] In the above-described embodiment, an example has been shown in which the first surface 51a of the metal plate 51 is processed by performing a first-surface etching step. However, the first-surface processing step for processing the first surface 51a is not limited to the first-surface etching step. For example, the first surface 51a may be processed by irradiating the metal plate 51 with a laser. In this case, the laser processing may be performed instead of the first-surface etching step, as described below.

[0150] First, as shown in FIG. 21 , a second-side resist layer 62 is formed on the second surface 51b of the metal plate 51, and the second-side resist layer 62 is patterned. Subsequently, as shown in FIG. 22 , a second-side etching process is performed in which an area of ​​the second surface 51b of the metal plate 51 that is not covered by the second-side resist layer 62 is etched to form a second recess 35 on the second surface 51b. Thereafter, as shown in FIG. 23 , a laser processing process is performed in which a laser L is irradiated onto a portion of the metal plate 51 where the second recess 35 is formed. The laser processing process forms a first recess 30 that penetrates from the second wall surface 36 of the second recess 35 to the first surface 51a. As shown in FIG. 23 , the laser L may be irradiated from the second surface 51b side of the metal plate 51.

[0151] In the examples shown in FIGS. 21 to 23, by forming the flat region 52 on the second surface 51b side of the deposition mask 20, it is possible to prevent shadows from being generated around the through-holes 25.

[0152] 23, wall surface 31 of first recess 30 formed by laser processing may be inclined so as to be displaced toward the center point of through hole 25 in plan view as it moves from second surface 51b toward first surface 51a. In this case, the end of first recess 30 on first surface 51a may define through region 42 where the opening area of ​​through hole 25 is minimum in plan view. [Example]

[0153] Next, the embodiments of the present disclosure will be described more specifically with reference to examples. However, the embodiments of the present disclosure are not limited to the description of the following examples as long as they do not depart from the gist of the present disclosure.

[0154] (Example 1) A deposition mask 20 including a flat region 52 shown in Fig. 9 was produced. The dimensions of each part of the deposition mask 20 are as follows. Dimension S1 of the through-hole region 42 in the first direction D1: 30 μm Thickness T2 of the flat area 52: 25 μm Dimension P1 of the first flat region 53 overlapping with the first center line L1: 2.0 μm Distance P2 between the ends Pa and Pb of the first flat region 53: 19 μm Dimension Q1 of the flat area 52 overlapping with the third center line L3: 30 μm Distance Q2 between ends Qa and Qb of flat region 52: 35 μm In the flat region 52 of Example 1, the dimension P1 is smaller than the distance P2, and P1 / P2 is 0.11. The dimension Q1 is smaller than the distance Q2, and Q1 / Q2 is 0.86.

[0155] 4, the deposition mask 20 was fixed to the frame 15. Specifically, the ends 17a and 17b were welded to the frame 15 while tension was applied to the deposition mask 20 in the length direction.

[0156] The deposition mask 20 welded to the frame 15 was observed using a magnifying glass. No damage or deformation was found in the deposition mask 20. Specifically, it was confirmed that no cracks or bends were found in the deposition mask 20.

[0157] Subsequently, a deposition process was carried out in which a deposition material 98 was attached onto the substrate 110 using a deposition mask 20 to form a deposition layer. Tris(8-quinolinolato)aluminum, an organic light-emitting material, was used as the deposition material 98. A glass substrate was used as the substrate 110. The conditions for the deposition process were set so that the thickness of the deposition layer would be 40 nm.

[0158] Next, the deposited layer on the substrate 110 was observed using a LEICA DMRX HX DC300F optical microscope and a Hitachi High-Technologies Birdscan scanning white light interference microscope. Based on the observation results, the area ratio V of the deposited layer was calculated. The area ratio V of the deposited layer is the ratio of the effective area V2 of the deposited layer to the area V1 of the through region 42. Specifically, V = V2 / V1. The effective area V2 is the area of ​​the region of the deposited layer that has a thickness of 95% or more of the target thickness. When the target thickness is 40 nm, the effective area V2 is the area of ​​the region of the deposited layer that has a thickness of 38 nm or more.

[0159] The area ratio V was calculated for each of the 30 deposited layers on the substrate 110. The area ratio V was 0.70 or more for all of the deposited layers.

[0160] The configuration of the deposition mask 20 in Example 1 and the evaluation results are shown in FIG. In the "Strength" column of the evaluation results, "OK" means that no cracks or bends occurred in the deposition mask 20 welded to the frame 15. "NG" means that cracks or bends occurred in the deposition mask 20 welded to the frame 15 or in the deposition mask 20 before being welded to the frame 15. In the "Shadow" column of the evaluation results, "OK" means that the area ratio V was 0.70 or more for all 30 deposition layers on the substrate 110. "NG" means that there were deposition layers with an area ratio V of less than 0.70.

[0161] (Examples 2 to 6) A deposition mask 20 including a flat region 52 shown in FIG. 9 was fabricated. The dimensions of each portion of the deposition mask 20 of Examples 2 to 6 are shown in FIG. 24. In the flat region 52 of Examples 2 to 6, as in Example 1, the dimension P1 is smaller than the distance P2. In the flat region 52 of Examples 2 to 6, P1 / P2 is 0.90 or less. In the flat region 52 of Examples 2 to 6, as in Example 1, the dimension Q1 is smaller than the distance Q2.

[0162] Next, in the same manner as in Example 1, the deposition masks 20 of Examples 2 to 6 were fixed to the frame 15. No cracks or bends were generated in the deposition masks 20 welded to the frame 15.

[0163] Subsequently, similarly to Example 1, the deposition masks 20 of Examples 2 to 6 were used to attach the deposition material 98 onto the substrate 110 to form deposition layers. In all of the 30 deposition layers on the substrate 110, the area ratio V was 0.70 or more.

[0164] (Example 7) A deposition mask 20 including the flat region 52 shown in FIG. 16 was fabricated. The dimensions of each portion of the deposition mask 20 of Example 7 are shown in FIG. 24. In the flat region 52 of Example 7, as in Example 1, the dimension P1 is smaller than the distance P2, and P1 / P2 is 0.42. In the flat region 52 of Example 7, the dimension Q1 and the distance Q2 are equal, and therefore Q1 / Q2 is 1.00.

[0165] Subsequently, the deposition mask 20 of Example 7 was fixed to the frame 15 in the same manner as in Example 1. The deposition mask 20 welded to the frame 15 was free from cracks and bends.

[0166] Subsequently, in the same manner as in Example 1, the deposition mask 20 of Example 7 was used to apply the deposition material 98 onto the substrate 110 to form a deposition layer. In all of the 30 deposition layers on the substrate 110, the area ratio V was 0.70 or more.

[0167] (Examples 8 to 10) A deposition mask 20 including a flat region 52 shown in Fig. 20 was fabricated. The dimensions of each portion of the deposition mask 20 of Examples 8 to 10 are shown in Fig. 24. In the flat region 52 of Examples 8 to 10, the dimension R1 is smaller than the dimension P1, and R1 / P1 is 0.90 or less.

[0168] Next, in the same manner as in Example 1, the deposition masks 20 of Examples 8 to 10 were fixed to the frame 15. No cracks or bends were generated in the deposition masks 20 welded to the frame 15.

[0169] Subsequently, similarly to Example 1, the deposition masks 20 of Examples 8 to 10 were used to attach the deposition material 98 onto the substrate 110 to form deposition layers. In all of the 30 deposition layers on the substrate 110, the area ratio V was 0.70 or more.

[0170] (Examples 11 to 12) A deposition mask 20 including a flat region 52 shown in FIG. 9 was fabricated. The dimensions of each portion of the deposition masks 20 of Examples 11 and 12 are shown in FIG. 24. In the flat region 52 of Examples 11 and 12, the dimension P1 and the distance P2 are equal, so P1 / P2 is 1.00. When the deposition mask 20 of Example 12 was visually inspected, cracks and bends were found to have occurred in parts of the deposition mask 20.

[0171] Subsequently, the deposition mask 20 of Example 11 was fixed to the frame 15 in the same manner as in Example 1. The deposition mask 20 welded to the frame 15 was free from cracks and bends.

[0172] Subsequently, in the same manner as in Example 1, the deposition mask 20 of Example 11 was used to apply the deposition material 98 onto the substrate 110 to form a deposition layer. In some of the 30 deposition layers on the substrate 110, the area ratio V was less than 0.70.

[0173] The deposition mask 20 of Example 12 was not evaluated for shadows.

[0174] (Examples 13 to 14) A deposition mask 20 including a flat region 52 shown in FIG. 20 was fabricated. The dimensions of each portion of the deposition masks 20 of Examples 13 and 14 are shown in FIG. 24. In the flat region 52 of Examples 13 and 14, the dimension P1 and the dimension R1 are equal, so R1 / P1 is 1.00. When the deposition mask 20 of Example 13 was visually inspected, cracks and bends were found to have occurred in parts of the deposition mask 20.

[0175] Subsequently, the deposition mask 20 of Example 14 was fixed to the frame 15 in the same manner as in Example 1. The deposition mask 20 welded to the frame 15 was free from cracks and bends.

[0176] Subsequently, in the same manner as in Example 1, the deposition mask 20 of Example 14 was used to apply the deposition material 98 onto the substrate 110 to form a deposition layer. In some of the 30 deposition layers on the substrate 110, the area ratio V was less than 0.70.

[0177] The deposition mask 20 of Example 13 was not evaluated for shadows.

Claims

1. A deposition mask including two or more through holes, a metal plate including a first surface and a second surface opposite the first surface; the through hole penetrating from the first surface side to the second surface side of the metal plate; a flat region located between two adjacent through holes when the deposition mask is viewed from the second surface side, the through holes are arranged in a staggered pattern in a first direction and a second direction in a plan view, The flat region includes a first flat region located on one side of a first center line and a second flat region located on the other side of the first center line, the first center line passes through center points of two of the through holes adjacent to each other in the first direction, the first flat region includes a portion in which a dimension of the first flat region in the first direction increases as the dimension increases away from the first centerline, the second flat region includes a portion in which a dimension of the second flat region in the first direction increases as the dimension increases away from the first centerline, The deposition mask, wherein the first flat area and the second flat area are continuous.

2. The deposition mask according to claim 1 , wherein when the deposition mask is viewed from the second surface side, two of the through holes adjacent to each other in the second direction are connected to each other.

3. The deposition mask according to claim 1 , further comprising a third flat region located between two of the through holes adjacent to each other in the second direction when the deposition mask is viewed from the second surface side.

4. a dimension in the second direction of a portion of the third flat region that overlaps with the second center line is smaller than a dimension in the first direction of a portion of the first flat region that overlaps with the first center line; The deposition mask according to claim 3 , wherein the second center line passes through center points of two of the through holes adjacent to each other in the second direction.

5. when the deposition mask is viewed from the second surface side, two of the through holes adjacent to each other in the second direction are connected to each other, 2. The deposition mask according to claim 1, wherein a dimension in the first direction of a portion of the first flat region that overlaps with the first center line is 0.90 times or less of a distance in the first direction between ends of a pair of contours of the first flat region that face the through hole in the first direction.

6. when the deposition mask is viewed from the second surface side, two of the through holes adjacent to each other in the second direction are connected to each other, a dimension in the third direction of a portion of the flat region that overlaps with the third center line is 1.00 times or less of a distance in the third direction between ends of a pair of contours of the flat region that face the through hole in the third direction; the third direction is perpendicular to the first direction, The deposition mask according to claim 1 , wherein the third center line passes through a midpoint between two of the through holes adjacent to each other in the first direction and extends in the third direction.

7. the through hole includes a first recess including a first wall surface located on the first surface side, and a second recess including a second wall surface located on the second surface side and connected to the first recess, The deposition mask according to claim 1 , wherein the second wall surface includes a portion that is displaced toward a center point of the through hole as it moves from the second surface side toward the first surface side.

8. The deposition mask according to claim 1 , wherein the flat region exhibits a pixel value equal to or greater than a reference value when observed from the second surface side using a laser microscope.

9. The deposition mask according to claim 1 , wherein the thickness of the flat region is the same as the thickness of the metal plate.

10. The deposition mask according to claim 1 , wherein the metal plate has a thickness of 50 μm or less.

11. A method for manufacturing a deposition mask including two or more through holes, comprising: a first surface processing step of forming a first recess including a first wall surface on a first surface of the metal plate; a second-surface etching step of etching, with an etching solution, an area of ​​a second surface of the metal plate located opposite the first surface that is not covered by the second-surface resist layer, to form a second recess including a second wall surface in the second surface, the through hole includes the first recess and a second recess connected to the first recess, the second-surface etching step is performed such that a flat region remains between two adjacent through holes when the deposition mask is viewed from the second surface side; the through holes are arranged in a staggered pattern in a first direction and a second direction in a plan view, the flat region includes a first flat region located on one side of a first center line between two adjacent through holes in the first direction and a second flat region located on the other side of the first center line, the first center line passes through center points of two of the through holes adjacent to each other in the first direction, the first flat region includes a portion in which a dimension of the first flat region in the first direction increases as the dimension increases away from the first centerline, the second flat region includes a portion in which a dimension of the second flat region in the first direction increases as the dimension increases away from the first centerline, the second surface etching step is performed so that the first flat region and the second flat region are continuous.

12. The method for manufacturing a deposition mask according to claim 11 , wherein the second-surface etching step is performed so that two of the through holes adjacent to each other in the second direction are connected to each other when the deposition mask is viewed from the second surface side.

13. 12 . The method for manufacturing a deposition mask according to claim 11 , wherein the second-surface etching step is performed so that two of the through holes adjacent to each other in the second direction are not connected to each other when the deposition mask is viewed from the second surface side.

14. a dimension in the second direction of a portion of a third flat region located between two adjacent through holes and overlapping with a second center line is smaller than a dimension in the first direction of a portion of the first flat region overlapping with the first center line; The method for manufacturing a deposition mask according to claim 13 , wherein the second center line passes through center points of two of the through holes adjacent to each other in the second direction.

15. the second surface resist layer includes a first region corresponding to the first flat region and a second region corresponding to the second flat region; the first region includes a portion in which a dimension of the first region in the first direction increases as the dimension increases away from the first centerline; The method for manufacturing a deposition mask according to claim 11 , wherein the second region includes a portion in which a dimension of the second region in the first direction increases with increasing distance from the first center line.

16. The method for manufacturing a deposition mask according to claim 11 , wherein the flat region exhibits a pixel value equal to or greater than a reference value when observed from the second surface side using a laser microscope.

17. The method for manufacturing a deposition mask according to claim 11 , wherein the metal plate has a thickness of 50 μm or less.

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