Ceramic susceptor and method for manufacturing ceramic susceptor

Abstract

To provide a technique for joining two ceramic sintered compacts via a joining layer and suppressing stress and strain between the ceramic sintered compacts and the joining layer.SOLUTION: The ceramic susceptor 150 includes a first ceramic sintered member 160, a second ceramic sintered member 170, and a bonding layer 180. The bonding layer 180 is a metallic layer containing a ceramic filler made of the ceramic constituting the first ceramic sintered body 160 or the second ceramic sintered body 170.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a ceramic susceptor and a method for manufacturing a ceramic susceptor. [Background technology]

[0002] Patent Document 1 discloses an electrostatic chuck as an example of a substrate holding member having a wafer mounting surface for holding a substrate such as a wafer. The electrostatic chuck described in Patent Document 1 includes a ceramic sintered body having a flow path formed therein. The ceramic sintered body is formed by joining a plate-shaped ceramic sintered body having a recess formed therein with another plate-shaped ceramic sintered body arranged to cover the recess. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6092857 Summary of the Invention [Problem to be solved by the invention]

[0004] The electrostatic chuck described in Patent Document 1 directly bonds two ceramic sintered bodies. In this case, the bonding temperature must be higher than 1000°C (e.g., 1500°C or higher) and a pressure of 1 MPa or higher must be applied, which makes manufacturing difficult and reduces yield. Therefore, the present inventors came up with the idea of ​​bonding two ceramic sintered bodies using a bonding layer (bonding material). They also discovered that when two ceramic sintered bodies are bonded using a bonding layer (bonding material), warping or deformation may occur due to the difference in CTE between the ceramic sintered bodies and the bonding layer.

[0005] The present invention has been made in consideration of the above circumstances, and aims to provide a technology for joining two ceramic sintered bodies via a joining layer and suppressing stress and strain between the ceramic sintered bodies and the joining layer. [Means for solving the problem]

[0006] According to an aspect of the present invention, a substrate holder includes a first ceramic sintered body having a plate-like shape and a main surface for mounting a ceramic base for holding a substrate; a plate-shaped second ceramic sintered body located below the first ceramic sintered body in a vertical direction perpendicular to the main surface; a ceramics joined body including a joining layer located between the first ceramics sintered body and the second ceramics sintered body in the up-down direction and joining the first ceramics sintered body and the second ceramics sintered body together, the bonding layer is metallic and contains a ceramic filler containing the ceramic constituting the first ceramic sintered body or the ceramic constituting the second ceramic sintered body as a filler, The ceramic susceptor is characterized in that a flow path facing both the first ceramic sintered body and the second ceramic sintered body is formed inside the ceramic bonded body. [Effects of the Invention]

[0007] According to the above configuration, the bonding layer is a metallic layer containing a ceramic filler, the filler being the ceramic that constitutes the first ceramic sintered body or the second ceramic sintered body. In this way, the ceramic filler is the same type of ceramic as the ceramic that constitutes the ceramic sintered body. This reduces the CTE difference between the bonding layer and the ceramic sintered body compared to a bonding layer without a ceramic filler. This reduces stress and strain between the ceramic sintered body and the bonding layer, allowing the shape of the bonded body (ceramic susceptor) to be maintained in a good condition. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view of an electrostatic chuck module 100. [Figure 2] FIG. 2 is a schematic diagram illustrating the electrostatic chuck module 100. As shown in FIG. [Figure 3] FIG. 3 is a schematic explanatory diagram showing the shape of the electrostatic attraction electrode 124. As shown in FIG. [Figure 4] 1(a) to 1(d) are diagrams showing the flow of a method for manufacturing the ceramic base 110. FIG. [Figure 5] 10(a) to 10(d) are diagrams showing the flow of another method for manufacturing the ceramic base 110. FIG. [Figure 6] FIG. 6 is a flowchart showing the flow of the method for manufacturing the ceramic susceptor 150. [Figure 7] (a) is an explanatory diagram showing the state in which grooves 131 are formed in the second ceramic fired body 170, and (b) is an explanatory diagram showing the state in which grooves 131 are formed in both the first ceramic fired body 160 and the second ceramic fired body 170. DETAILED DESCRIPTION OF THE INVENTION

[0009] <Electrostatic chuck module 100> An electrostatic chuck module 100 according to this embodiment will be described with reference to FIGS. 1 and 2. The electrostatic chuck module 100 according to this embodiment is an example of a substrate holding member for attracting and holding a semiconductor wafer such as a silicon wafer (hereinafter simply referred to as a wafer 10). In the following description, the up-down direction 5 is defined based on the state in which the electrostatic chuck module 100 is installed and ready for use (the state shown in FIG. 1). As shown in FIG. 1, the electrostatic chuck module 100 according to this embodiment mainly includes a ceramic base material 110, an electrostatic attraction electrode 124 (see FIGS. 2 and 3), and a ceramic susceptor 150.

[0010] As shown in FIG. 2, the ceramic substrate 110 is a circular, plate-like member having a diameter of 12 inches (approximately 300 mm) and includes two main surfaces (an upper surface 111 and a lower surface 113) facing each other in the vertical direction 5. A wafer 10 to be held is placed on the upper surface 111 of the ceramic substrate 110. Note that in FIGS. 1 and 2, the wafer 10 and the ceramic substrate 110 are shown separated from each other for ease of viewing. In this embodiment, the ceramic substrate 110 is formed of an AlN ceramic sintered body. For example, the AlN content can be 90% or more. Note that the ceramic substrate 110 does not necessarily have to be formed of AlN ceramic. For example, it may be formed of a ceramic sintered body containing Al2O3 (referred to as Al2O3 ceramics).

[0011] Although not shown, the upper surface 111 of the ceramic substrate 110 can be provided with a ring-shaped protrusion arranged on the outer periphery (outer edge) and multiple cylindrical protrusions arranged inside the ring-shaped protrusion.

[0012] A gas flow path (not shown) can be formed inside the ceramic base 110. The gas flow path can be used as a flow path for supplying gas to a space (gap) defined by the upper surface 111 of the ceramic base 110 and the lower surface of the wafer 10. Conversely, gas can be exhausted from the space (gap) defined by the upper surface 111 of the ceramic base 110 and the lower surface of the wafer 10 via the gas flow path. In this case, the pressure difference between the pressure outside the gap and the pressure inside the gap can be adjusted by adjusting the exhaust pressure. This allows the wafer 10 to be adsorbed toward the upper surface of the ceramic base 110.

[0013] 2, an electrostatic attraction electrode 124 is embedded inside the ceramic base 110. The electrostatic attraction electrode 124 can be embedded at a position 0.1 mm to 2.0 mm below the upper surface 111 of the ceramic base 110. In other words, the thickness of the ceramic insulating layer from the upper surface 111 of the ceramic base 110 to the electrostatic attraction electrode 124 can be 0.1 mm or more and 2.0 mm or less.

[0014] 3, the electrostatic attraction electrode 124 has two semicircular electrodes 124a and 124b arranged facing each other with a predetermined distance between them, and has a generally circular shape as a whole. In this embodiment, the outer diameter of the electrostatic attraction electrode 124 is 292 mm. The wafer 10 can be electrostatically attracted by applying a predetermined voltage (e.g., ±500 V) to each of the electrodes 124a and 124b. In this embodiment, the ceramic base 110 and the electrostatic attraction electrode 124 form an electrostatic chuck.

[0015] As shown in FIG. 2 , a ceramic susceptor 150 is bonded to the lower surface 113 of the ceramic base 110. The ceramic susceptor 150 has a circular plate shape with a diameter equal to or larger than that of the ceramic base 110, and a flow path 130 is formed therein. The ceramic susceptor 150 includes a first ceramic sintered body 160, a second ceramic sintered body 170, and a bonding layer 180. In this embodiment, the first ceramic sintered body 160 and the second ceramic sintered body 170 have the same composition and are formed of a ceramic sintered body containing SiC (SiC ceramics). For example, the first ceramic sintered body 160 and the second ceramic sintered body 170 can be made of SiC ceramics containing 90 wt % or more of SiC. Alternatively, the first ceramic sintered body 160 and the second ceramic sintered body 170 can be made of SiC-containing ceramics containing 30 wt % or more of SiC. These SiC ceramics may be formed by adding sintering aids such as B4C, C, and YO3 in addition to SiC, which improves sinterability. They may also be formed by containing metal borides, gold carbides, metal nitrides, metal silicides, etc. For example, borides of metals in Groups 4 to 6 of the periodic table can be used as metal borides. Metal compounds containing elements such as Ti and Si can also be used. This allows the linear thermal expansion coefficient to be adjusted, facilitating bonding to the ceramic substrate 110.

[0016] The thermal conductivity of SiC ceramics is 70 W / mK or higher. Because SiC ceramics have high water resistance, water can be passed through the flow paths 130 formed inside as a cooling fluid. Water has a high heat transfer coefficient and is suitable for absorbing large amounts of heat. The first ceramic sintered body 160 and the second ceramic sintered body 170 do not necessarily have to be ceramic sintered bodies containing SiC. For example, they may be ceramic sintered bodies containing Al2O3. Furthermore, the first ceramic sintered body 160 and the second ceramic sintered body 170 do not necessarily have to have the same composition. For example, the first ceramic sintered body may be a SiC-based ceramic sintered body containing a metal silicide, and the second ceramic sintered body may be a SiC ceramic sintered body containing 90 wt% or more of SiC. Alternatively, the first ceramic sintered body 160 may be a ceramic sintered body containing SiC, and the second ceramic sintered body 170 may be a ceramic sintered body containing Al2O3.

[0017] A bonding layer 180 is interposed between the first ceramic sintered body 160 and the second ceramic sintered body 170. In other words, the first ceramic sintered body 160 and the second ceramic sintered body 170 are bonded by the bonding layer 180. The bonding layer 180 is a metallic layer containing a ceramic filler in which the ceramic constituting the first ceramic sintered body 160 or the second ceramic sintered body 170 is used as a filler. Examples of metals used for the bonding layer 180 include Al alloys and In alloys. The bonding layer 180 of this embodiment is an Al alloy layer containing 20 to 80 wt% SiC as a ceramic filler. As the Al alloy, for example, an Al alloy containing 15 wt% Si, 10 wt% Mg, and the remainder Al can be used. In addition, when the first ceramic sintered body 160 and / or the second ceramic sintered body 170 are sintered bodies of ceramics containing SiC and AlN, the bonding layer 180 can be a metallic layer containing at least one of SiC and AlN as a ceramic filler.

[0018] Next, a method for manufacturing the electrostatic chuck module 100 will be described. In the following, an example will be described in which the ceramic base 110 is made of AlN ceramics formed from AlN. The AlN ceramics is made of AlN ceramics containing AlN as a main component. Here, AlN ceramics containing AlN as a main component refers to a ceramic sintered body containing 50 wt% or more of AlN. In addition, for the sake of simplicity, it is assumed that only the electrostatic chucking electrode 124 is embedded in the ceramic base 110.

[0019] First, a method for manufacturing the ceramic substrate 110 will be described. As shown in FIG. 4(a), granulated powder P, primarily composed of AlN powder, is placed in a carbon mold with a bed 601 and pre-pressed with a punch 602. The granulated powder P preferably contains 7 wt % or less of a sintering aid (e.g., Y2O3). Next, as shown in FIG. 4(b), an electrode 124 cut to a predetermined shape is placed on the pre-pressed granulated powder P. The electrode 124 is placed parallel to a plane perpendicular to the pressure direction (the bottom surface of the mold with a bed 601). At this time, a W pellet or a Mo pellet may be embedded at the position of the terminal 124T (see FIG. 3) of the electrode 124.

[0020] As shown in FIG. 4(c), granulated powder P is further poured into the bed-type mold 601 so as to cover the electrostatic chucking electrode 124, and then pressed and molded with a punch 602. At this time, the amount of granulated powder P covering the electrostatic chucking electrode 124 can be adjusted so that the electrostatic chucking electrode 124 is embedded at a depth of 0.3 mm or more. Next, as shown in FIG. 4(d), the granulated powder P with the electrostatic chucking electrode 124 embedded therein is fired in a pressed state. The pressure applied during firing is preferably 1 MPa or more. Furthermore, firing is preferably performed at a temperature of 1800°C or more. Note that firing can be performed multiple times. Next, to form the terminal 124T (see FIG. 3), blind holes are drilled down to the electrostatic chucking electrode 124. Note that if a pellet is embedded, blind holes can be drilled down to the pellet. Furthermore, if necessary, through holes can be formed to form gas channels. In this case, a ceramic substrate 110 having a gas channel formed therein can be produced.

[0021] The upper surface 111, lower surface 113, and side surface 114 of the ceramic base 110 thus formed are ground, and further polished as necessary. At this time, the distance in the vertical direction 5 from the upper surface 111 of the ceramic base 110 to the electrostatic attraction electrode 124 can be adjusted. Furthermore, by performing sandblasting on the upper surface 111, it is possible to form a plurality of convex portions and an annular convex portion on the upper surface 111. Note that although sandblasting is a suitable processing method for forming the plurality of convex portions and the annular convex portion, other processing methods can also be used.

[0022] The ceramic substrate 110 can also be manufactured by the following method. If necessary, 7 wt% or less of a sintering aid (YO) is added to the AlN raw material powder. Metal carbides, metal nitrides, or metal borides can also be added to the AlN raw material powder. Next, a binder is added to the AlN raw material powder, and the mixture is mixed in ethanol, dried, and then granulated to produce granulated powder P containing AlN as a component. The granulated powder P is then filled into a rubber mold and isostatically pressed (CIP) using water pressure to produce two plate-shaped CIP compacts 610 (see FIG. 5(a)). For example, CIP molding can be performed at a pressure of 130 MPa. Next, the CIP compacts 610 are degreased to remove the binder (see FIG. 5(b)). Next, as shown in FIG. 5(c), a recess 611 for embedding the electrostatic attraction electrode 124 is formed in one of the degreased CIP compacts 610. The recess 611 may be formed in the CIP compact 610 before degreasing. After the electrostatic chucking electrode 124 is placed in the recess 611 of the CIP compact 610, another CIP compact 610 is stacked on top of it. The thickness of the other CIP compact 610 can be adjusted so that the electrostatic chucking electrode 124 is embedded at a depth of 0.3 mm or more. Next, as shown in FIG. 5(d), the stacked CIP compacts 610 sandwiching the electrostatic chucking electrode 124 are fired in a pressed state to produce a fired compact. The pressure applied during firing is preferably 1 MPa or more. Furthermore, firing is preferably performed at a temperature of 1800°C or higher. Firing can also be performed multiple times. The steps after producing the fired compact are similar to those described above, and therefore will not be described here.

[0023] Next, a method for manufacturing the ceramic susceptor 150 will be described with reference to the flowchart of FIG.

[0024] First, the first ceramic sintered body 160 and the second ceramic sintered body 170 are produced (S101). Specifically, granulated powder P containing SiC as a component is produced in the same manner as in the manufacturing method of the ceramic base material 110 described above. The granulated powder P is filled into a rubber mold and isostatically pressed (CIP) using water pressure to produce two plate-shaped CIP-molded bodies, which are then degreased. Furthermore, as described above, the degreased CIP-molded bodies are fired at room temperature or hot-pressed to produce the first ceramic sintered body 160 and the second ceramic sintered body 170. Then, the first ceramic sintered body 160 and / or the second ceramic sintered body 170 are subjected to outer shaping to form grooves 131 that will later become the flow paths 130 (S102). For example, as shown in FIG. 7(a), the grooves 131 are formed on the upper surface 171 of the second ceramic sintered body 170. The grooves 131 may be formed in the lower surface 162 of the first ceramic sintered body 160 instead of the upper surface 171 of the second ceramic sintered body 170. In either case, the ceramic susceptor 150 having the flow path 130 formed therein can be fabricated by stacking and bonding the first ceramic sintered body 160 from above. Alternatively, as shown in FIG. 7( b), the grooves 131 are formed in the upper surface 171 of the second ceramic sintered body 170 and the lower surface 162 of the first ceramic sintered body 160. In this case, the ceramic susceptor 150 having the flow path 130 formed therein can be fabricated by stacking and bonding the first ceramic sintered body 160 and the second ceramic sintered body 170. The upper surface 161 and the lower surface 162 of the first ceramic sintered body 160 are examples of the first and second main surfaces of the present invention, and the upper surface 171 and the lower surface 172 of the second ceramic sintered body 170 are examples of the third and fourth main surfaces of the present invention. It is not necessary that the grooves 131 are formed in the fired body. Before firing the CIP molded body, the CIP molded body can be calcined at a temperature lower than the firing temperature (for example, a temperature 500°C to 100°C lower than the firing temperature) to produce a calcined body, and the grooves 131 can be formed in the calcined body. Alternatively, the grooves 131 can be formed in the CIP molded body, and after the CIP molded body with the grooves 131 formed is calcined or fired, additional processing can be performed on the calcined body or fired body to adjust the groove shape so that the grooves 131 have the desired dimensions.

[0025] Next, the bonding material 181 that will become the bonding layer 180 is prepared (S103). In this embodiment, the bonding material 181 contains 20 to 80 wt% SiC ceramic filler (a filler with a particle size D50 of 10 μm to 50 μm is applicable), and the remainder is an Al alloy (1 to 15 wt% Si, 1 to 10 wt% Mg). The bonding material 181 may be a paste, foil, or thin plate. When the bonding material 181 is a paste, it is prepared by adding a solvent such as alcohol, water, or an organic solvent, and a thickener such as carboxymethyl cellulose, polyvinyl alcohol, or xanthan gum to the ceramic filler and metal powder and mixing them together. When the bonding material 181 is a foil or thin plate, 20 to 80 wt% SiC ceramic filler, which is the material of the bonding material, and the remainder Al alloy (1 to 15 wt% Si, 1 to 10 wt% Mg) are melted and rolled to form.

[0026] Next, the bonding material 181 is placed between the lower surface 162 of the first ceramic sintered body 160 and the upper surface 171 of the second ceramic sintered body 170 (S104). The thickness of the bonding material 181 (length in the vertical direction 5) is preferably 20 μm to 2000 μm. If the thickness of the bonding material 181 is less than 20 μm, there is a risk of poor bonding occurring. Furthermore, if the thickness of the bonding material 181 is greater than 2000 μm, there is a risk that the shape of the bonding material 181 will not be uniform during the heat treatment described below.

[0027] Next, in a state where the bonding material 181 is placed between the lower surface 162 of the first ceramic sintered body 160 and the upper surface 171 of the second ceramic sintered body 170, a heat treatment is performed (S105). For example, the heat treatment is performed at a temperature of 700°C to 1000°C and a pressure of 0.001 MPa to 10 MPa. The heat treatment is preferably performed in a nitrogen atmosphere.

[0028] The ceramic substrate 110 and the ceramic susceptor 150 thus fabricated can be joined together using hard solder, soft solder, or an adhesive such as a silicon bond. Examples of hard solder materials include aluminum brazing (A4047, eutectic point 577°C). These hard solder materials may contain active metals such as Ti, Hf, and Zr. Metal foils such as Al foils can also be used as hard solder materials. When joining the ceramic substrate 110 and the ceramic susceptor 150 using hard solder, it is preferable that the centerline average roughness Ra of the joining surfaces before joining be 1.6 μm or less. Examples of soft solder materials include In, Sn, Pb, and alloys (solder) thereof. When joining the ceramic substrate 110 and the ceramic susceptor 150 using soft solder, it is preferable that the centerline average roughness Ra of the joining surfaces before joining be 1.6 μm or less. A thin film of Cr, Ti, or the like may be formed on the joining surfaces in advance.

[0029] <Effects of the embodiment> In the above embodiment, the electrostatic chuck module 100 includes a plate-shaped ceramic base 110 and a plate-shaped ceramic susceptor 150 bonded to the lower surface 113 of the ceramic base 110. The ceramic susceptor 150 includes a first ceramic sintered body 160, a second ceramic sintered body 170, and a bonding layer 180.

[0030] In the above embodiment, the bonding layer 180 is a metallic layer containing a ceramic filler, in which the ceramics constituting the first ceramic sintered body 160 or the second ceramic sintered body 170 are used as the filler. Thus, in this embodiment, two ceramic sintered bodies are bonded together using a bonding layer containing the ceramics contained in the ceramic sintered bodies as the filler and a metal matrix. The D50 particle size of the filler in the bonding layer is adjusted to 10 μm to 50 μm, thereby enhancing the fluidity of the metal components in the matrix. In particular, when the filler content is 50 wt% or less, it is even more preferable that the D50 particle size of the filler be 20 μm or less. This allows the metal components constituting the matrix of the bonding material to penetrate into the ceramic sintered body, resulting in wet adhesion between the ceramic sintered body and the bonding material during bonding, thereby firmly bonding the ceramic sintered body and the bonding material. Furthermore, the ceramic filler is made of the same type of ceramic as the ceramics constituting the ceramic sintered body. In this case, the CTE difference between the bonding layer and the ceramic sintered body can be reduced compared to a bonding layer without a ceramic filler. This makes it possible to suppress stress and strain between the ceramic sintered body and the bonding layer, and to maintain the shape of the bonded body (ceramic susceptor 150) in a good condition.

[0031] In this embodiment, the first ceramic sintered body 160 and the second ceramic sintered body 170 can be ceramic sintered bodies containing SiC. The bonding layer 180 can be an Al alloy containing SiC as a ceramic filler. The thermal conductivity of SiC ceramics is 70 W / mk or more. Because SiC ceramics have high resistance to water, water can be passed through the flow path 130 formed inside the SiC ceramics as a cooling fluid. Water has a high heat transfer coefficient and is suitable for absorbing a large amount of heat.

[0032] In this embodiment, the ceramic base 110 is joined onto the upper surface 161 of the first ceramic sintered body 160 of the ceramic susceptor 150. This allows the electrostatic chuck module 100, which is a joined body of the ceramic susceptor 150 and the ceramic base 110, to function as an electrostatic chuck.

[0033] The method for manufacturing the ceramic susceptor 150 according to this embodiment includes the steps of preparing a first ceramic sintered body 160 and a second ceramic sintered body 170, forming a groove 131 on at least one of an upper surface 171 of the second ceramic sintered body 170A and a lower surface 162 of the first ceramic sintered body 160, preparing a bonding material 181 to form a bonding layer 180, disposing the bonding material 181 between the lower surface 162 of the first ceramic sintered body 160 and the upper surface 171 of the second ceramic sintered body 170, and performing a heat treatment with the bonding material 181 disposed between the lower surface 162 of the first ceramic sintered body 160 and the upper surface 171 of the second ceramic sintered body 170. The bonding material 181 includes a ceramic filler containing the ceramic constituting the first ceramic sintered body 160 or the second ceramic sintered body 170 as a filler and a metal matrix. By using such a bonding material 181, the bonding temperature can be set to 1000°C or less, which is below the sintering temperature of ceramics, making it easier to manufacture a ceramic susceptor 150, which is a bonded body of a first ceramic sintered body 160 and a second ceramic sintered body 170.

[0034] <Modification form> The above-described embodiment is merely illustrative and may be modified as appropriate. For example, the shapes and thicknesses of the ceramic substrate 110 and the ceramic susceptor 150 may be modified as appropriate. Furthermore, the planar shape and / or cross-sectional shape of the flow channel 130 formed inside the ceramic susceptor 150 may be modified as appropriate.

[0035] In the above-described embodiment and modified embodiment, the ceramic base 110 functioning as an electrostatic chuck is bonded to the upper surface 151 of the ceramic susceptor 150. However, the present invention is not limited to such an embodiment. Of the above-described electrostatic chuck module 100, the ceramic susceptor 15 can be used as a ceramic susceptor for mounting a substrate holding member (electrostatic chuck) used in semiconductor manufacturing.

[0036] Although the present invention has been described above using embodiments and modifications thereof, the technical scope of the present invention is not limited to the scope of the above description. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0037] The order of execution of each process in the manufacturing method shown in the specification and drawings is not particularly specified, and the processes may be executed in any order unless the output of a previous process is used in a subsequent process. For convenience, even if a description is made using "first," "next," etc., it does not mean that the processes must be executed in this order. [Explanation of symbols]

[0038] 100 Electrostatic Chuck Module 110 Ceramic substrate 124 Electrostatic Adsorption Electrode 130 flow path 150 Ceramic susceptor 160 First ceramic sintered body 170 Second ceramic sintered body

Claims

1. a plate-shaped first ceramic sintered body having a main surface for mounting a substrate-holding ceramic base thereon; a plate-shaped second ceramic sintered body located below the first ceramic sintered body in a vertical direction perpendicular to the main surface; a ceramics joined body including a joining layer located between the first ceramics sintered body and the second ceramics sintered body in the up-down direction and joining the first ceramics sintered body and the second ceramics sintered body together, the bonding layer is metallic and contains a ceramic filler containing the ceramic constituting the first ceramic sintered body or the ceramic constituting the second ceramic sintered body as a filler, A ceramic susceptor, wherein a flow path facing both the first ceramic sintered body and the second ceramic sintered body is formed inside the ceramic bonded body.

2. the first ceramic sintered body and the second ceramic sintered body are ceramic sintered bodies containing SiC, 2. The ceramic susceptor according to claim 1, wherein the bonding layer is an Al alloy containing SiC as a ceramic filler.

3. The ceramic susceptor according to claim 1 or 2; a substrate-holding ceramic base disposed on the main surface of the ceramic susceptor and having an electrode embedded therein;

4. preparing a plate-shaped first ceramic sintered body having a first main surface and a second main surface opposed to each other in a vertical direction; preparing a plate-shaped second ceramic sintered body having a third main surface overlapping the second main surface and a fourth main surface facing the third main surface in the up-down direction; forming a recess in at least one of the second main surface of the first ceramic sintered body and / or the third main surface of the second ceramic sintered body; preparing a bonding material including a ceramic filler containing the ceramic constituting the first ceramic sintered body or the ceramic constituting the second ceramic sintered body as a filler, and a metal material; and a step of stacking the first ceramic sintered body and the second ceramic sintered body, with the bonding material disposed between the second main surface of the first ceramic sintered body and the third main surface of the second ceramic sintered body, so that the recessed portion of the second main surface is covered by the third main surface, and performing a heat treatment.

5. Executing the method for manufacturing a ceramic susceptor according to claim 4; and placing a ceramic base for holding a substrate, having an electrode embedded therein, on the first main surface of the first ceramic sintered body or the fourth main surface of the second ceramic sintered body.

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