Substrate processing apparatus and substrate processing method

Abstract

To provide a technique capable of efficiently adjusting a temperature of an internal space of a processing container.SOLUTION: The substrate processing apparatus includes a processing container having an internal space for accommodating a substrate, a substrate support configured to support the substrate in the internal space, and a gas supply configured to supply a processing gas to the internal space. The gas supply unit includes a temperature control unit having a first region for adjusting a temperature near the internal space, and a second region adjacent to the first region and provided at a position farther from the internal space than the first region. The first region includes a heater that performs heating and a first gas flow path through which gas flows. The second region includes a liquid channel through which liquid flows and a second air channel that communicates with the first air channel and through which air flows.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a temperature control module applied to a wafer support or upper electrode (showerhead electrode assembly) in a processing vessel (semiconductor processing chamber). This temperature control module includes multiple passages containing a heat transfer gas, multiple tubes installed in each passage through which a heat transfer liquid flows, and multiple heater elements installed adjacent to each passage. The temperature control module controls the temperature of each zone by changing the pressure of each heater element, the heat transfer liquid flowing through each tube, and the gas pressure in each passage. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5417338 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can efficiently adjust the temperature of the internal space of a processing vessel. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus for processing a substrate, the substrate processing apparatus including: a processing vessel having an internal space for accommodating the substrate; a substrate support unit for supporting the substrate in the internal space; and a gas supply unit for supplying a processing gas to the internal space, wherein the gas supply unit has a temperature control unit having a first region for adjusting a temperature near the internal space and a second region adjacent to the first region and located farther from the internal space than the first region, the first region having a heater for heating and a first gas flow path for circulating a gas, and the second region having a liquid flow path for circulating a liquid and a second gas flow path connected to the first gas flow path for circulating the gas. [Effects of the Invention]

[0006] According to one aspect, the temperature of the internal space of the processing chamber can be efficiently adjusted. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram showing an overall configuration of a substrate processing apparatus according to an embodiment; [Figure 2] FIG. 2 is an exploded perspective view showing a heater plate and a cooling plate of the temperature control unit. [Figure 3] Figure 3(A) is a cross-sectional view showing the second gas flow path and the liquid flow path, Figure 3(B) is a cross-sectional view showing the second gas flow path and the liquid flow path of another modified example, and Figure 3(C) is a cross-sectional view showing the second gas flow path and the liquid flow path of yet another modified example. [Figure 4] 1 is a flowchart illustrating an example of a substrate processing method according to an embodiment. [Figure 5] FIG. 10 is a diagram illustrating a temperature control unit according to a first modified example. [Figure 6] FIG. 10 is a diagram illustrating a temperature control unit according to a second modified example. [Figure 7] FIG. 10 is a diagram illustrating a temperature control unit according to a third modified example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] As shown in FIG. 1 , a substrate processing apparatus 1 according to the embodiment includes a processing vessel 10 that accommodates a substrate W therein and performs substrate processing on the accommodated substrate W. The substrate W to be processed may be a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. Examples of substrate processing include film formation processing, in which a film is formed on the substrate W by chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular layer deposition (MLD), or the like. The following description will be given taking the substrate processing apparatus 1 that performs this film formation processing as an example. The substrate processing performed by the substrate processing apparatus 1 is not limited to film formation processing, and may also include, for example, etching, modification, cleaning, ashing, and the like.

[0010] Specifically, in addition to the processing chamber 10, the substrate processing apparatus 1 includes a substrate support unit 20, a gas supply unit 30, and a gas exhaust unit 40. The substrate processing apparatus 1 further includes a control unit 90 that controls each component to perform substrate processing.

[0011] The processing vessel 10 has an internal space 10s for accommodating and processing the substrate W. For example, the processing vessel 10 includes a concave vessel body 11 having a cylindrical side wall 11a and a circular bottom wall 11b, and a lid 12 that covers an upper open portion of the vessel body 11. The upper end of the side wall 11a and the lower surface of the lid 12 are airtightly fixed together by sandwiching a sealing member (not shown).

[0012] The processing vessel 10 (vessel body 11, lid 12) is formed of a metal material such as aluminum or an aluminum alloy. However, the processing vessel 10 is not limited to this, and a highly heat-resistant material such as stainless steel, a low-thermal expansion metal or alloy, or a low-thermal expansion ceramic may be used. The container body 11 may also be provided with a heating element (not shown) inside or around the container body 11 for heating the processing vessel 10.

[0013] Furthermore, the substrate processing apparatus 1 includes a transfer port 15 for loading and unloading the substrate W into and from a predetermined position in the sidewall 11a of the processing chamber 10, and a gate valve 16 for opening and closing the transfer port 15.

[0014] The substrate support part 20 supports the substrate W in the internal space 10s of the processing vessel 10. The substrate support part 20 includes a mounting table 21 on which the substrate W is placed, a support member 22 connected to the mounting table 21, and an operating mechanism 23 that operates the support member 22 outside the processing vessel 10.

[0015] The mounting table 21 is made of a metal material such as aluminum or nickel, and is supported by support members 22 within the processing chamber 10. The mounting table 21 is formed in a perfect circular shape that is slightly larger than the substrate W in a plan view. The mounting table 21 has a mounting surface 21s on its upper surface that horizontally supports the substrate W. The mounting table 21 may also include a fixing means (not shown) for fixing the substrate W placed on the mounting surface 21s. Examples of the fixing means that may be used include electrostatic adsorption, suction adsorption, and a mechanical mechanism.

[0016] The mounting table 21 may also include a temperature adjustment unit 21a therein that adjusts the temperature of the substrate W placed on the mounting surface 21s. For example, the temperature adjustment unit 21a is configured by combining a flow path through which a temperature adjustment medium flows, a heater, etc., and adjusts the temperature of the substrate W under the control of the control device 90. The mounting table 21 preferably includes a temperature sensor (not shown) therein that measures the temperature of the substrate W placed on the mounting surface 21s when adjusting the temperature of the temperature adjustment unit 21a.

[0017] The support member 22 is connected to the center of the bottom surface of the mounting table 21. The support member 22 extends downward from the processing vessel 10 through a hole formed in the bottom wall 11b of the processing vessel 10, and its lower end is connected to an operating mechanism 23. A seal structure 24, such as a magnetic fluid seal, is provided between the support member 22 and the bottom wall 11b.

[0018] The operating mechanism 23 has a function of raising, lowering, and rotating the mounting table 21 via the support members 22 under the control of the control device 90. For example, the operating mechanism 23 raises and lowers the mounting table 21 between a processing position and a transfer position. The processing position is a position where the substrate W is brought close to the shower head 31 of the gas supply unit 30 and subjected to substrate processing. The transfer position is a position vertically below the processing position where the substrate W is received and transferred. Furthermore, the operating mechanism 23 may rotate the mounting table 21 disposed at the processing position during substrate processing.

[0019] Furthermore, the substrate support part 20 has a lift pin lifting mechanism that raises and lowers a plurality of lift pins (not shown). With the mounting table 21 placed at the transfer position by the operation mechanism 23, the lift pin lifting mechanism receives and delivers the substrate W to and from a transfer device (not shown) that moves forward and backward through the transfer port 15 by being controlled to rise and fall by the control device 90.

[0020] The gas supply unit 30 supplies a process gas from the outside of the process vessel 10 to the internal space 10s of the process vessel 10 (the process space PS between the substrate W and the shower head 31) via the shower head 31. The type of process gas supplied by the gas supply unit 30 is selected appropriately depending on the type of film to be formed on the substrate W. The process gas may be one type or multiple types. For example, the process gas may include a source gas (precursor) adsorbed by the substrate W and a reaction gas that reacts with the source gas. The process gas may also include a cleaning gas that removes reaction by-products in the process vessel 10 or the shower head 31, and a purge gas that exhausts gas from the process vessel 10.

[0021] The gas supply unit 30 includes a shower head 31, a connection member 32 that circulates processing gas through the shower head 31, a processing gas supply path 33 connected to the upper end of the connection member 32, and a processing gas supply source 34 connected to the processing gas supply path 33.

[0022] The shower head 31 is formed in a disk shape so as to be able to face the substrate W, and is fixed to the vertically upper side of the processing chamber 10 (above the mounting table 21). The shower head 31 discharges the processing gas supplied through a connecting member 32 connected to the shower head 31 onto the substrate W. For example, the shower head 31 has a gas diffusion chamber 31a that horizontally diffuses the processing gas supplied from the connecting member 32, and a plurality of discharge holes 31b that communicate between the gas diffusion chamber 31a and the processing space PS.

[0023] The shower head 31 and / or the mounting table 21 may be configured to be connected to a power supply for plasma generation (not shown), and to generate plasma in the processing space PS by supplying power for plasma generation from the power supply, thereby performing plasma processing.

[0024] The connecting member 32 is connected to, for example, the center of the shower head 31 and extends vertically. The connecting member 32 has a processing gas flow path 32a therein, which allows the processing gas to flow through the gas diffusion chamber 31a. The connecting member 32 and the processing gas supply path 33 are airtightly connected by a connector (not shown).

[0025] The process gas supply path 33 is provided outside the process vessel 10 and supplies a process gas from a process gas supply source 34 to the connecting member 32. The gas supply unit 30 may include a valve 331 and a flow rate regulator 332 at a midpoint of the process gas supply path 33. In supplying the process gas, the control device 90 opens the valve 331 to supply the process gas from the process gas supply source 34 and adjusts the flow rate of the process gas using the flow rate regulator 332. When supplying multiple types of process gases, the gas supply unit 30 may be configured so that the process gas supply path 33 branches into multiple paths and different types of process gas supply sources 34 are connected to the multiple branched paths, respectively.

[0026] The gas exhaust unit 40 exhausts, as exhaust gas, unreacted gas supplied to the internal space 10s of the processing vessel 10 and reaction by-products generated by the gas reaction. The gas exhaust unit 40 according to the embodiment is configured to be able to exhaust exhaust gas evenly from above the substrate W and from all around the circumference.

[0027] Specifically, the gas exhaust unit 40 has an exhaust port 41 and an annular exhaust groove 42 that communicates with the exhaust port 41, located above the side wall 11a of the processing vessel 10 (vessel body 11). The gas exhaust unit 40 also includes a baffle structure 43 that surrounds the inside of the exhaust groove 42 and has a plurality of holes that communicate with the exhaust groove 42. The exhaust groove 42 is provided at a position higher than the substrate W that is placed at the processing position by the substrate support unit 20. The gas exhaust unit 40 guides the exhaust gas in the processing space PS upward through the baffle structure 43.

[0028] The gas exhaust unit 40 has an exhaust path 45 connected to the exhaust port 41 outside the processing vessel 10, and includes a suction mechanism 46 that sucks exhaust gas into the exhaust path 45. The suction mechanism 46 is configured by appropriately combining, for example, a pressure control (APC) valve for adjusting the pressure inside the processing vessel 10, a turbomolecular pump for sucking the processing gas, a vacuum pump, etc. The suction mechanism 46 applies a suction force (negative pressure) to guide the exhaust gas inside the processing vessel 10 under the control of the control device 90. As a result, exhaust gas present in the processing space PS during substrate processing flows into the exhaust groove 42 through the holes in the baffle structure 43, moves from the exhaust groove 42 to the exhaust port 41, and then flows out into the exhaust path 45. The exhaust gas passes through the exhaust path 45 and the suction mechanism 46 and is discharged to a waste disposal unit (not shown).

[0029] The substrate processing apparatus 1 configured as described above can deposit a film of a target thickness on the surface of the substrate W by supplying a processing gas while maintaining the temperature of the substrate W at a target temperature during substrate processing (film formation processing). For this reason, the substrate processing apparatus 1 includes a temperature control unit 35 in the gas supply unit 30 that can adjust the temperature of the processing space PS containing the substrate W.

[0030] The temperature control unit 35 according to the embodiment adjusts the temperature of the internal space 10s and the process gas above the substrate W by using part or all of the lid 12 of the processing vessel 10. Specifically, the temperature control unit 35 includes a heater plate 36 located on the vessel body 11 side and a cooling plate 37 stacked on the heater plate 36. The heater plate 36 and the cooling plate 37 form the lid 12 that covers the opening of the internal space 10s of the vessel body 11. Note that the lid 12 may include other members stacked thereon in addition to the heater plate 36 and the cooling plate 37. The heater plate 36 and the cooling plate 37 are fixed by appropriate fixing means such as welding, adhesive, or screwing, and can be handled as an integrated lid 12.

[0031] Furthermore, the temperature control unit 35 includes a gas circulating unit 38 that circulates a cooling gas through the lid 12, and a liquid circulating unit 39 that circulates a cooling liquid through the lid 12. The gas circulating unit 38 according to the embodiment is configured to circulate air (e.g., dry air) as the cooling gas. However, the cooling gas is not limited to air and may be, for example, helium gas with high thermal conductivity, or an inert gas such as nitrogen gas or carbon dioxide gas. Furthermore, the liquid circulating unit 39 according to the embodiment is configured to circulate water (H2O; hereinafter, also referred to as cooling water) as the cooling liquid. However, the cooling liquid is not limited to cooling water and may be, for example, a fluorine-based liquid such as Galden (registered trademark).

[0032] The heater plate 36 forms a first region of the temperature control unit 35 in the processing vessel 10. The heater plate 36 heats the internal space 10s to a target temperature (e.g., a high temperature such as 250°C) during substrate processing of the substrate W. The heater plate 36 is formed in an annular shape so that the connecting member 32 can be disposed at the center, and has a constant thickness along the horizontal direction. In addition, the upper surface of the shower head 31 is fixed to the lower surface of the heater plate 36 facing the internal space 10s.

[0033] The heater plate 36 may be made of a metal material that has high thermal conductivity and excellent workability or heat resistance. Examples of materials for the heater plate 36 include aluminum, aluminum alloys, and stainless steel such as SUS. The heater plate 36 may be formed into a shape having the first gas flow path 381 described below using a 3D printer, or may be formed by joining two metal plates having the first gas flow path 381.

[0034] 2, the heater plate 36 has a plurality of (four) heater element placement portions 36a on the upper surface on which the cooling plate 37 is stacked. The heater element placement portions 36a are arranged at equal intervals (every 90°) along the circumferential direction of the heater plate 36. Each heater element placement portion 36a has an opening that communicates with the outer peripheral surface of the heater plate 36, and is configured so that the heater 361 can be inserted and slid through the opening in the outer peripheral surface to be installed.

[0035] The heater 361 is formed by a plurality of rectangular heater elements 361c installed in each heater element arrangement portion 36a of the heater plate 36. The heater 361 is connected to the control device 90 via a temperature control driver (not shown), and heats the heater plate 36 to a target temperature under the control of the control device 90. The configuration of the heater 361 is not particularly limited, and may be, for example, a ring-shaped, spiral-shaped, lattice-shaped, or serpentine-shaped electric heating wire wound inside or on the surface of the heater plate 36, or a sheet-shaped heater.

[0036] The heater plate 36 has therein a first gas flow path 381 through which air can flow. The first gas flow path 381 constitutes a part of the gas flow section 38. The first gas flow path 381 is formed below the heater 361 (at a position closer to the internal space 10s). By flowing air through the first gas flow path 381, the heater plate 36 can be air-cooled. For example, the first gas flow path 381 extends in a C-shape (arc-shape) within the heater plate 36 and repeatedly meanders in the horizontal direction, thereby flowing air throughout substantially the entire horizontal direction of the heater plate 36. However, the shape of the first gas flow path 381 is not limited thereto and may be various other shapes, for example, it may be a space that is wide in the horizontal direction.

[0037] Returning to FIG. 1 , one end of the first gas flow path 381 communicates with an inlet 381c formed on the outer circumferential surface of the heater plate 36 and communicates with a gas supply path 383 via a connector provided at the inlet 381c. The gas flow unit 38 also includes an air supply source 384 at an end of the gas supply path 383 and a flow regulator 385 located midway along the gas supply path 383 for adjusting the flow rate of air. The air supply source 384 supplies air to the gas supply path 383 under the control of the control device 90. For example, a compressor capable of supplying compressed air can be used as the air supply source 384. For the flow regulator 385, a mass flow controller or the like can be used for adjusting the flow rate of air to a target flow rate under the control of the control device 90. The specific heat of air is lower than that of cooling water, and adjusting the flow rate of the air can adjust the degree of cooling within the heater plate 36. The air flow rate can be in the range of approximately 6 L / min to 100 L / min.

[0038] The other end of the first gas flow path 381 communicates with a first connection flow path 382 that extends vertically upward near the inner circumferential surface of the heater plate 36. The first connection flow path 382 communicates with an opening provided on the upper surface of the heater plate 36. When the heater plate 36 and the cooling plate 37 are stacked together, the first connection flow path 382 communicates with a second connection flow path 386, which will be described later.

[0039] On the other hand, the cooling plate 37 forms a second region of the temperature control unit 35 that removes (cools) heat from the shower head 31 and the heater plate 36 during substrate processing of the substrate W. The cooling plate 37 is also formed in an annular shape so that it can be arranged around the connecting member 32, and has a constant thickness along the horizontal direction. The radial width of the cooling plate 37 is set to be approximately the same as that of the heater plate 36 (see also FIG. 2). The cooling plate 37 is stacked on the heater plate 36 so as to cover the upper surface of the heater plate 36 (including the heater member arrangement portions 36a).

[0040] The cooling plate 37 is preferably made of a material having the same thermal expansion coefficient as the heater plate 36 in order to reduce the difference in thermal expansion between the cooling plate 37 and the heater plate 36. Examples of materials for the cooling plate 37 include aluminum, aluminum alloys, and stainless steel such as SUS. The heater plate 36 and the cooling plate 37 may be made of the same material or different materials.

[0041] A second connection flow path 386, a second gas flow path 387, and an exhaust flow path 388 for circulating air are provided inside the cooling plate 37. The second connection flow path 386, the second gas flow path 387, and the exhaust flow path 388 constitute part of the gas circulation section 38.

[0042] The second connecting passage 386 is connected to an opening on the lower surface of the cooling plate 37 near the inner circumferential surface of the cooling plate 37, and extends a short distance vertically upward from this opening. The second connecting passage 386 is provided at a position opposite to the first connecting passage 382, ​​and is connected to the first connecting passage 382 as described above.

[0043] The second gas flow path 387 is provided near the center of the cooling plate 37 and is in communication with the second connection flow path 386, through which air is supplied. The second gas flow path 387 according to this embodiment is formed inside a pipe 387t provided inside a liquid flow path 391 provided in the cooling plate 37. The liquid flow path 391 is circumferentially formed in a substantially C-shape in plan view, and the pipe 387t of the second gas flow path 387 is also formed in a C-shape to match the shape of the liquid flow path 391 (see also FIG. 2).

[0044] The exhaust flow path 388 is provided at one end of the C-shape of the second gas flow path 387, extends vertically upward within the cooling plate 37, and communicates with an opening on the upper surface of the cooling plate 37. The exhaust flow path 388 communicates with a gas exhaust path 389 via a connector provided on the cooling plate 37.

[0045] The gas exhaust path 389 is a path for exhausting air that has circulated through the heater plate 36 and the cooling plate 37. The end of the gas exhaust path 389 opposite the connector is connected to, for example, a waste section (not shown), and the air is exhausted to the waste section. Note that the gas flow section 38 may be configured to circulate the used gas to the supply side (air supply source 384) without exhausting it.

[0046] Meanwhile, the liquid circulation unit 39 includes a liquid flow path 391 within the cooling plate 37 and a liquid circulation path 392 that circulates cooling water outside the cooling plate 37. The liquid circulation unit 39 also includes a pump 393 located midway along the liquid circulation path 392, which cools the cooling water. The pump 393 circulates the cooling water through the liquid flow path 391. The pump 393 may also function as a chiller that adjusts the temperature of the cooling water to a target temperature. The temperature of the cooling water is, for example, room temperature (approximately 23°C to 25°C), and circulating the cooling water can prevent the temperature from rising. The chiller (pump 393) can be operated to cool the cooling water if the temperature of the cooling water rises significantly above room temperature. Cooling water has a higher specific heat capacity than air, and increasing the flow rate only results in a small temperature change, meaning that the amount of heat dissipation cannot be increased. However, because it is possible to maintain a large temperature difference, a greater cooling effect can be achieved compared to air.

[0047] As described above, the liquid flow path 391 of the liquid circulation unit 39 is formed in a substantially C-shape (see also FIG. 2). Both ends of the liquid flow path 391 communicate with two openings (an inlet opening and an outlet opening) formed in the upper surface of the cooling plate 37, and are connected to the liquid circulation path 392 via connectors provided in each opening. The flow direction of the liquid in the liquid flow path 391 is, for example, the same direction as the flow direction of the air in the second gas flow path 387. However, because the liquid circulation unit 39 can sufficiently cool the pipe body 387t with cooling water having a high specific heat, the flow direction may be opposite to the flow direction of the air.

[0048] The liquid flow path 391 has the pipe 387t of the second gas flow path 387 disposed inside. For example, as shown in FIG. 3A, the liquid flow path 391 is formed in a rectangular shape having a larger cross-sectional area than the pipe 387t of the gas circulation unit 38 in a cross-sectional view. The liquid flow path 391 supports the pipe 387t by a connecting unit 387c (or a support unit, not shown) so that the pipe 387t extends coaxially at the center of the liquid flow path 391. This allows the liquid circulation unit 39 to supply cooling water to the liquid flow path 391, so that the cooling water comes into contact with the entire circumferential surface of the pipe 387t. Furthermore, the liquid flow path 391 can prevent thermal expansion of the lid 12 by circulating the cooling water through the processing vessel 10.

[0049] The cooling plate 37 can selectively remove heat from the shower head 31 and the heater plate 36 near the center of the processing vessel 10, where the temperature is likely to become high, by using the cooling water flowing through the liquid flow paths 391. Furthermore, the liquid flow paths 391 can sufficiently reduce the temperature of the air discharged from the gas discharge path 389 by using the cooling water flowing through the liquid flow paths 391 to cool the heated air inside the pipes 387t. Note that the liquid flow paths 391 may be provided so as to extend over substantially the entire cooling plate 37, and heat may be removed from substantially the entire cooling plate 37.

[0050] The cross-sectional shapes of the second gas flow path 387 and the liquid flow path 391 are not limited to a square shape as shown in Fig. 3(A), and may be circular as in another modified example shown in Fig. 3(B). Alternatively, the cross-sectional shape of the liquid flow path 391 may be formed in a concave shape that surrounds the second gas flow path 387 on three sides as in another modified example shown in Fig. 3(C).

[0051] The substrate processing apparatus 1 according to the embodiment is basically configured as described above, and its operation (substrate processing method) will be described below with reference to FIG.

[0052] The substrate processing apparatus 1 performs substrate processing on the substrate W by sequentially executing steps S101 to S109 shown in FIG.

[0053] When the substrate W is transported into the substrate processing apparatus 1 by a transport device provided outside the processing vessel 10 while the mounting table 21 is positioned at the transport position, the substrate processing apparatus 1 receives the substrate W using the lift pin lifting mechanism and places the substrate W on the mounting table 21 (step S101).

[0054] Next, the substrate processing apparatus 1 causes the operating mechanism 23 to raise the mounting table 21, and places the mounting table 21 and the substrate W at the processing position (step S102).

[0055] Before substrate processing, the substrate processing apparatus 1 adjusts the temperature of the substrate W using the temperature adjustment unit 21a of the mounting table 21, and adjusts the temperature inside the processing chamber 10 using the temperature control unit 35 (step S103). At this time, the temperature control unit 35 heats the heater plate 36 using the heater 361, and cools the cooling plate 37 by circulating cooling water using the liquid circulation unit 39. The temperature control unit 35 also circulates air through the heater plate 36 (first region) and then the cooling plate 37 (second region) using the gas circulation unit 38.

[0056] The heater plate 36 can increase the temperature of the shower head 31 and the processing space PS by being heated by the heater 361. Furthermore, the heater plate 36 can make the temperature of the entire lower surface of the heater plate 36 uniform by circulating air through the first gas flow path 381. Note that the temperature control unit 35 may perform control such as not circulating air before substrate processing but circulating air after substrate processing.

[0057] The substrate processing apparatus 1 monitors the temperature of the substrate W or the temperature inside the processing chamber 10 using a temperature sensor, and when the temperature reaches a target temperature, the gas supply unit 30 starts supplying the processing gas into the processing chamber 10 (step S104). When plasma is to be generated in the processing space PS, power for generating plasma is supplied to the shower head 31 and the mounting table 21.

[0058] Even when the processing gas is being supplied, the substrate processing apparatus 1 monitors the temperature of the substrate W or the temperature inside the processing chamber 10 using a temperature sensor, and controls the temperature adjustment by the temperature adjustment unit 21a of the mounting table 21 and the temperature control unit 35 to maintain the temperature optimal for substrate processing (step S105). In temperature adjustment by the temperature control unit 35, the control device 90 maintains the temperature of the cooling water in the liquid circulation unit 39 constant and circulates the cooling water, while controlling the air flow rate in the gas circulation unit 38 based on the temperature measured by the temperature sensor. For example, if the monitored temperature is higher than the target temperature, the air flow rate is increased to lower the overall temperature of the heater plate 36. Alternatively, if the monitored temperature is lower than the target temperature, the air flow rate is decreased to raise the overall temperature of the heater plate 36.

[0059] That is, during substrate processing, the substrate processing apparatus 1 can circulate air through the first gas flow path 381 while heating with the heater 361 of the heater plate 36, and circulate air through the second gas flow path 387 while circulating liquid through the liquid flow path 391 of the cooling plate 37. This allows the heater plate 36 to appropriately adjust the processing space PS and the substrate W to a target temperature, while the cooling plate 37 effectively removes heat from the heater plate 36 during substrate processing. Even when the target temperature is changed according to a recipe during substrate processing, the control device 90 can shorten the time required to change the temperature to the target temperature by appropriately adjusting the heating of the heater 361 and the air flow rate. Alternatively, the control device 90 may employ various control methods in addition to the air control described above. For example, the control device 90 may store a temperature threshold in advance and supply air when the temperature exceeds the threshold, but stop supplying air when the temperature is below the threshold. Furthermore, the control device 90 may be configured to feed back the output of the heater 361 and adjust the supply, stoppage of supply, or flow rate of air.

[0060] Furthermore, during substrate processing of the substrate W, the control device 90 monitors whether or not the substrate processing is to be completed (step S106), and if the substrate processing is to be completed, the process proceeds to step S107.

[0061] In step S107, the substrate processing apparatus 1 performs a termination process, such as stopping the supply of processing gas and shutting down the temperature adjustment unit 21a and the temperature control unit 35. Note that in the termination process, the substrate processing apparatus 1 may perform control to continue the supply of air and the circulation of cooling water while stopping the operation of the heater 361. This allows the temperature inside the processing chamber 10 to be smoothly reduced.

[0062] Thereafter, the substrate processing apparatus 1 lowers the substrate W and the mounting table 21 to the transfer position (step S108). Furthermore, the substrate processing apparatus 1 opens the gate valve 16 to allow the transfer device to enter the processing vessel 10, and controls the operation of the lift pin lifting mechanism and the transfer device to transfer the substrate W out of the processing vessel 10 (step S109).

[0063] As described above, in the substrate processing method, by appropriately linking the heating by the heater 361 and the cooling by the gas circulation unit 38 and the liquid circulation unit 39, the temperature during substrate processing can be smoothly adjusted and heat can be stably removed from the heater plate 36. In particular, the substrate processing apparatus 1 can also adjust the amount of heat removed from the cooling plate 37 by using the air from the gas circulation unit 38, making it possible to reduce the power required to maintain the output of the heater 361. Furthermore, the substrate processing apparatus 1 promotes heat removal by circulating cooling water through the liquid circulation unit 39, thereby suppressing the flow rate of the circulating air (gas), thereby saving on supply resources and power.

[0064] The substrate processing apparatus 1 and the substrate processing method are not limited to the above embodiment and may take various modifications. For example, the temperature control unit 35 is formed by stacking the heater plate 36 and the cooling plate 37, which are separate members. However, this is not limiting. The two plates may be formed as a continuous block by employing a manufacturing method such as 3D printing. Furthermore, the temperature control unit 35 may form a heat insulating space at the boundary between the heater plate 36 and the cooling plate 37.

[0065] As in the first modified example shown in FIG. 5 , the temperature control unit 35A may be configured such that the second gas flow path 387 is not provided inside the liquid flow path 391 within the cooling plate 37, but the second gas flow path 387 and the liquid flow path 391 are located at separate positions. For example, the cooling plate 37 may have the second gas flow path 387 and the liquid flow path 391 arranged in two tiers, one above the other, with the two flow paths having the same planar shape. Even in this case, the cooling plate 37 can cool the air flowing through the second gas flow path 387 by receiving the temperature of the cooling water flowing through the liquid flow path 391. The second gas flow path 387 and the liquid flow path 391 may be formed in different planar shapes and partially intersect in a planar view. Alternatively, the cooling plate 37 may have the second gas flow paths 387 and the liquid flow paths 391 arranged adjacent to each other in the horizontal direction. In FIG. 5, the second gas flow path 387 and the liquid flow path 391 are arranged near the center of the cooling plate 37 in order to cool the air, but in the embodiment of FIG. 1, which can obtain a sufficient cooling effect, this is not limited to this and the second gas flow path 387 and the liquid flow path 391 may be arranged near the outside of the cooling plate 37.

[0066] 6, the temperature control unit 35B may be configured to supply air to the cooling plate 37 and then to the heater plate 36. As a result, the air flowing through the second gas flow path 387 of the cooling plate 37 is first cooled by the cooling water in the liquid flow path 391, and then flows into the heater plate 36. The air that moves from the second gas flow path 387 to the first gas flow path 381 can effectively lower the temperature inside the heater plate 36. Even in this case, the temperature of the air needs to be sufficiently lowered when it is exhausted from the device, so it is desirable for the temperature control unit 35B to exhaust the air by passing it through the cooling plate 37 last.

[0067] Alternatively, the gas flow unit 38 may connect the gas supply path 383 and the gas exhaust path 389, and may include a switching valve (not shown) at the connection point. The switching valve switches between a first pattern in which air is circulated through the heater plate 36 and the cooling plate 37 in that order, and a second pattern in which air is circulated through the cooling plate 37 and the heater plate 36 in that order, based on the control of the control device 90. This allows the temperature control unit 35B to cool the processing vessel 10 using various air flow patterns.

[0068] Furthermore, as shown in a third modified example in FIG. 7 , the temperature control unit 35C may be configured to cause air in the gas flow unit 38 to travel back and forth multiple times between the heater plate 36 and the cooling plate 37. For example, the temperature control unit 35C may cause air to flow into the first gas flow path 381, and then alternately circulate the air through the first gas flow path 381 and the second gas flow path 387 multiple times. By having air travel back and forth between the first gas flow path 381 of the heater plate 36 and the second gas flow path 387 of the cooling plate 37, the cooling performance of the temperature control unit 35C can be further improved. That is, the temperature control unit 35C repeatedly cools the heater plate 36 with air and the cooling water of the cooling plate 37, thereby appropriately adjusting the difference in heat capacity between the cooling water and the air. As a result, a large cooling capacity can be achieved with a small amount of air.

[0069] The technical ideas and effects of the present disclosure explained in the above embodiments will be described below.

[0070] A first aspect of the present disclosure is a substrate processing apparatus 1 for processing a substrate W, comprising: a processing vessel 10 having an internal space 10s for accommodating the substrate W; a substrate support part 20 for supporting the substrate W in the internal space 10s; and a gas supply part 30 for supplying a processing gas to the internal space 10s. The gas supply part 30 is provided with a temperature control part 35 having a first region (heater plate 36) for adjusting the temperature near the internal space 10s; and a second region (cooling plate 37) adjacent to the first region and located farther from the internal space 10s than the first region. The first region has a heater 361 for heating and a first gas flow path 381 for circulating gas. The second region has a liquid flow path 391 for circulating liquid and a second gas flow path 387 connected to the first gas flow path 381 for circulating gas.

[0071] As described above, the substrate processing apparatus 1 can efficiently adjust the temperature of the internal space 10s and remove heat from the first area during substrate processing by circulating gas through both the first area (heater plate 36) and the second area (cooling plate 37). In particular, the substrate processing apparatus 1 can effectively fine-tune the temperature of the internal space 10s by adjusting the flow rate of gas with a low specific heat. This allows the substrate processing apparatus 1 to accurately manage the temperature of the substrate W during substrate processing, thereby improving the accuracy of substrate processing.

[0072] Furthermore, the second gas flow path 387 is provided inside the liquid flow path 391. This allows the substrate processing apparatus 1 to smoothly adjust the temperature of the gas flowing through the second gas flow path 387 using the liquid flowing through the liquid flow path.

[0073] The second gas flow path 387 is provided inside a pipe 387t installed in the liquid flow path 391. This allows the substrate processing apparatus 1 to easily obtain a structure for circulating gas in the second gas flow path 387 inside the liquid flow path 391.

[0074] Furthermore, the liquid flow path 391 and the second gas flow path 387 are disposed at least near the center of the second region (cooling plate 37) and extend in the circumferential direction, which allows the substrate processing apparatus 1 to efficiently remove heat from the center of the first region, where the temperature is likely to rise, in the second region.

[0075] The first gas flow path 381 has an inlet 381c for introducing gas into the outer surface of the first region (heater plate 36), and the first gas flow path 381 and the second gas flow path 387 are connected to each other via connecting paths (first connecting path 382, ​​second connecting path 386) provided near the center of the first region. This allows the substrate processing apparatus 1 to smoothly circulate gas between the first region and the second region.

[0076] Furthermore, the first gas flow path 381 is provided on the side closer to the heater 361. This allows the substrate processing apparatus 1 to lower the temperature of the first region (heater plate 36) to an appropriate level by the gas flowing through the first gas flow path 381. Note that the positions of the heater 361 and the first gas flow path 381 may be changed as appropriate, provided that the temperature of the first region (heater plate 36) can be lowered appropriately.

[0077] Furthermore, the temperature control unit 35 causes the gas to flow through the first gas flow path 381 and then the second gas flow path 387. This allows the temperature control unit 35 to adjust the temperature of the first region (heater plate 36) using the gas supplied to the first gas flow path 381, and also allows the gas whose temperature has increased in the first region to be cooled in the second gas flow path 387 and discharged to the outside. This makes it possible to suppress temperature increases outside the processing chamber 10 and in a clean room in which the substrate processing apparatus 1 is installed, thereby reducing the load on air conditioning in the clean room.

[0078] Furthermore, the temperature control unit 35 alternately circulates the gas multiple times through the first gas flow path 381 and the second gas flow path 387. This allows the temperature control unit 35 to repeat the operation of circulating the gas through the cooled area in the first region (heater plate 36) and returning the gas to a low temperature in the second region (cooling plate 37), thereby making it possible to promote uniformity of the in-plane temperature distribution in the first region.

[0079] Temperature control unit 35 also has a liquid circulation path 392 that circulates the liquid between liquid flow path 391 and the liquid, and a chiller (pump 393) that is provided midway along liquid circulation path 392 and adjusts the temperature of the liquid. This allows temperature control unit 35 to lower the temperature of the gas flowing through second gas flow path 387 while maintaining the temperature of the second region (cooling plate 37) at a target temperature.

[0080] The first region is provided on a heater plate 36 that is adjacent to the shower head 31 that discharges a processing gas into the internal space 10s and that heats the shower head 31 with a heater 361, and the second region is provided on a cooling plate 37 that is stacked on the heater plate 36 and that removes heat from the heater plate 36. This allows the substrate processing apparatus 1 to adjust the temperature of the internal space 10s using the heater plate 36 while allowing the cooling plate 37 to effectively remove heat from the heater plate 36.

[0081] The heater plate 36 and the cooling plate 37 form the lid 12 that is disposed on the upper part of the processing vessel 10 and closes the internal space 10s. This allows the substrate processing apparatus 1 to easily achieve a configuration in which the internal space 10s is closed by the lid 12 and the temperature is adjusted by the heater plate 36.

[0082] Furthermore, a second aspect of the present disclosure is a substrate processing method for a substrate processing apparatus 1 including a processing vessel 10 having an internal space 10s for accommodating a substrate W, a substrate support part 20 for supporting the substrate W in the internal space 10s, and a gas supply part 30 for supplying a processing gas to the internal space 10s, wherein the gas supply part 30 is provided with a temperature control part 35 having a first region (heater plate 36) for adjusting the temperature near the internal space 10s, and a second region (cooling plate 37) adjacent to the first region and located farther from the internal space 10s than the first region, and in the substrate processing method, while heating with a heater 361 provided in the first region, a gas is circulated through a first gas flow path 381 in the first region, and while circulating a liquid through a liquid flow path 391 provided in the second region, a gas is circulated through a second gas flow path 387 in the second region that is connected to the first gas flow path 381. Even in this case, the substrate processing method can efficiently adjust the temperature of the internal space 10s of the processing vessel 10.

[0083] The substrate processing apparatus 1 and the substrate processing method according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured differently and can be combined within the scope of the appended claims.

[0084] The substrate processing apparatus 1 of the present disclosure can be applied to any type of apparatus, including atomic layer deposition (ALD) apparatus, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP). [Explanation of symbols]

[0085] 1. Substrate processing equipment 10 Processing container 10s internal space 20 Substrate support 30 Gas supply unit 36 Heater Plate 361 Heater 37 Cooling Plate 381 First gas flow path 387 Second gas flow path 391 Liquid Flow Path W substrate

Claims

1. A substrate processing apparatus for processing a substrate, a processing vessel having an internal space for accommodating the substrate; a substrate support portion that supports the substrate in the internal space; a gas supply unit that supplies a processing gas to the internal space, the gas supply unit includes a temperature control unit having a first region that adjusts a temperature near the internal space, and a second region that is adjacent to the first region and is located farther from the internal space than the first region; the first region has a heater for heating and a first gas flow path for circulating a gas; The second region has a liquid flow path through which a liquid flows, and a second gas flow path that communicates with the first gas flow path and through which the gas flows. Substrate processing equipment.

2. The second gas flow path is provided inside the liquid flow path. The substrate processing apparatus according to claim 1 .

3. The second gas flow path is provided inside a pipe installed in the liquid flow path. The substrate processing apparatus according to claim 2 .

4. the liquid flow path and the second gas flow path are disposed at least near the center of the second region and extend in a circumferential direction; The substrate processing apparatus according to claim 1 .

5. the first gas flow path has an inlet for allowing the gas to flow in on an outer surface side of the first region, The first gas flow path and the second gas flow path are in communication with each other via a connecting flow path provided near the center of the first region. The substrate processing apparatus according to claim 4 .

6. the temperature control unit causes the gas to flow through the first gas flow path and then the second gas flow path; The substrate processing apparatus according to claim 1 .

7. the temperature control unit causes the gas to flow alternately through the first gas flow path and the second gas flow path multiple times. The substrate processing apparatus according to claim 6 .

8. The temperature control unit includes a liquid circulation path that circulates the liquid between the liquid flow path and the liquid circulation path, and a chiller that is provided at a midpoint of the liquid circulation path and adjusts the temperature of the liquid. The substrate processing apparatus according to claim 1 .

9. the first region is provided on a heater plate adjacent to a shower head that discharges the processing gas into the internal space and that heats the shower head with the heater; the second region is provided on a cooling plate that is stacked on the heater plate and that removes heat from the heater plate; The substrate processing apparatus according to claim 1 .

10. the heater plate and the cooling plate are disposed on an upper portion of the processing vessel to form a lid that closes the internal space; The substrate processing apparatus according to claim 9 .

11. a processing vessel having an interior space for accommodating a substrate; a substrate support portion that supports the substrate in the internal space; a gas supply unit that supplies a processing gas to the internal space, the gas supply unit includes a temperature control unit having a first region that adjusts a temperature near the internal space, and a second region that is adjacent to the first region and is located farther from the internal space than the first region; In the substrate processing method, a gas is caused to flow through a first gas flow path in the first region while heating the first region with a heater provided in the first region, and a liquid is caused to flow through a liquid flow path provided in the second region while the gas is caused to flow through a second gas flow path in the second region that is in communication with the first gas flow path; Substrate processing method.

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