Method and apparatus for lift pin error detection

Abstract

Various embodiments of the present technology provide an apparatus having a susceptor with a plurality of gas channels therethrough and a plurality of pressure sensors coupled to the gas channels.SOLUTION: The apparatus may further include a controller in communication with the plurality of sensors and configured to detect a change in pressure or flow rate within the plurality of channels, determine a failure of at least one of the plurality of lift pins based on the detected change in pressure or flow rate, and generate an error signal based on the determined failure.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates generally to a method and apparatus for lift pin error detection. More specifically, the present disclosure relates to a susceptor having multiple gas channels within a wafer pocket and multiple pressure sensors coupled to the multiple gas channels. The pressure or flow through the pressure sensors can correspond to lift pin errors. [Background technology]

[0002] Lift pins in a susceptor may experience malfunctions or errors, such as sticking or breaking in the lift pin through-holes, etc. Conventional systems do not have a method or mechanism for detecting lift pin errors in a timely manner. Summary of the Invention [Means for solving the problem]

[0003] Various embodiments of the present technology may provide an apparatus having a susceptor having a plurality of gas channels therethrough and a plurality of pressure sensors coupled to the gas channels, The apparatus may further include a controller configured to communicate with the plurality of sensors, detect changes in pressure or flow rate in the plurality of gas channels, determine a failure of at least one of the plurality of lift pins based on the detected changes in pressure or flow rate, and generate an error signal based on the determined failure.

[0004] According to one aspect, an apparatus includes a susceptor including a first surface and a second surface parallel to the first surface, a recessed area in the first surface sized to receive a wafer, a first plurality of through holes extending from the first surface to the second surface and disposed in the recessed area, a plurality of lift pins disposed in the first plurality of through holes, and a plurality of gas channels having openings in the first surface and the recessed area; a plurality of pressure sensors fluidly coupled to the plurality of gas channels; and a controller configured to communicate with the plurality of pressure sensors, detect changes in pressure or flow rate in the plurality of gas channels, determine a failure of at least one of the plurality of lift pins based on the detected changes in pressure or flow rate, and generate an error signal based on the determined failure.

[0005] In one embodiment, the openings of at least two of the plurality of gas channels are immediately adjacent to each through-hole of the first plurality of through-holes.

[0006] In one embodiment, the plurality of gas channels comprises six channels.

[0007] In one embodiment, the openings of the gas channels are disposed 120 degrees from each other.

[0008] In one embodiment, the openings of the plurality of gas channels are adjacent to and positioned radially inward from the outer edge of the recessed region.

[0009] In one embodiment, the plurality of gas channels includes up to three channels.

[0010] In one embodiment, the apparatus further comprises a plurality of gas ports disposed on the first surface and coupled to an inert gas supply.

[0011] In one embodiment, the plurality of gas ports are positioned radially outward from the recessed region.

[0012] In one embodiment, the plurality of gas ports are positioned adjacent to the openings of the plurality of gas channels.

[0013] In one embodiment, the apparatus further comprises a pump coupled to the plurality of gas ports and configured to apply a suction force to the first surface.

[0014] In one embodiment, the apparatus further comprises a pump coupled to the plurality of gas channels and configured to evacuate air from the plurality of gas channels.

[0015] In one embodiment, determining a failure of at least one lift pin includes detecting an increase in pressure or flow rate.

[0016] In another aspect, an apparatus includes a susceptor including a first surface and a second surface parallel to the first surface, an interior region that is a circular region on the first surface configured to support a wafer, a first plurality of through holes extending from the first surface to the second surface and disposed in the interior region, a plurality of lift pins disposed in the first plurality of through holes, and a plurality of gas channels having openings in the first surface and the interior region, wherein the plurality of gas channels includes at least three gas channels, openings of the plurality of gas channels are disposed adjacent an outer edge of the interior region, and openings of the plurality of gas channels are disposed 120 degrees from each other; a plurality of pressure sensors fluidly coupled to the plurality of gas channels; and a controller configured to communicate with the plurality of pressure sensors and detect a change in pressure or gas flow rate in at least one of the plurality of gas channels, determine a failure of at least one of the plurality of lift pins based on the detected change in pressure or flow rate, and generate an error signal based on the determined failure.

[0017] In one embodiment, the apparatus further comprises a plurality of gas ports disposed on the first surface and coupled to an inert gas supply, the gas ports being positioned radially outward from the interior region.

[0018] In one embodiment, the gas ports are positioned adjacent to the openings of the gas channels and are spaced 120 degrees apart from one another.

[0019] In one embodiment, the apparatus further comprises a pump fluidly coupled to the plurality of gas ports and configured to facilitate airflow away from the first surface.

[0020] In one embodiment, determining a failure of at least one lift pin includes detecting an increase in pressure or gas flow rate.

[0021] In yet another aspect, a system includes a susceptor including a first surface and a second surface parallel to the first surface, an interior region that is a circular region on the first surface configured to support a wafer and a recessed region, a first plurality of through holes extending from the first surface to the second surface and disposed in the recessed region, a plurality of lift pins disposed in the first plurality of through holes, and a plurality of gas channels having openings in the first surface and the interior region, the plurality of gas channels including at least three channels; a plurality of pressure sensors fluidly coupled to the plurality of gas channels; a controller configured to communicate with the plurality of pressure sensors and detect changes in pressure or gas flow rate in the plurality of gas channels, determine a failure of at least one lift pin of the plurality of lift pins based on an increase in detected pressure, and generate an error signal based on the determined failure; and a pump coupled to the plurality of gas channels and configured to evacuate air from the plurality of gas channels.

[0022] In one embodiment, each pressure sensor of the plurality of pressure sensors comprises a pressure transducer, and the pump is downstream of the plurality of pressure sensors.

[0023] In one embodiment, each pressure sensor of the plurality of pressure sensors comprises a pressure and flow controller, each pressure and flow controller fluidly coupled to an inert gas source and configured to receive inert gas from the inert gas source. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a schematic diagram of a system according to an embodiment of the present technology; [Figure 2A] 1 is a cross-sectional view of a reactor with a susceptor in a first position in accordance with an embodiment of the present technique; [Figure 2B] FIG. 2 is a cross-sectional view of a reactor with a susceptor in a second position, in accordance with an embodiment of the present technique. [Figure 3A] 1 is a cross-sectional view of a susceptor in accordance with an embodiment of the present technology; [Figure 3B] 1 is a cross-sectional view of a susceptor in accordance with an embodiment of the present technology; [Figure 4] FIG. 1 is a top view of a susceptor in accordance with an embodiment of the present technique. [Figure 5A] 1 is a cross-sectional view of a portion of a susceptor in accordance with an embodiment of the present technique; [Figure 5B] 1 is a cross-sectional view of a portion of a susceptor in accordance with an embodiment of the present technique; DETAILED DESCRIPTION OF THE INVENTION

[0025] The present technology may be more fully understood by reference to the detailed description with reference to the following exemplary drawings, in which like reference numbers refer to like elements and steps throughout:

[0026] The present technology may be described in terms of functional block components and various processing steps. These functional blocks may be realized by any number of components configured to perform the specified functions and achieve various results. For example, the present technology may employ various gas lines, valves, controllers, reaction chambers, vessels, and susceptors.

[0027] 1-3 , the exemplary system 100 may include a reactor 115 configured to perform a process on a processed object, such as a substrate 215 (e.g., a wafer). For example, the reactor 115 may be configured to perform heating, deposition, etching, polishing, ion implantation, and / or other processes on the processed object. In some embodiments, the reactor 115 may be configured to perform transfer, vacuum sealing, and evacuation functions. In some embodiments, the reactor 115 may perform an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process. The reactor 115 may be fluidly coupled to an inert gas source 105 and configured to receive an inert gas (such as argon) from the inert gas source 105. For example, the reactor 115 may be coupled to the inert gas source 105 with a gas line (not shown) and a valve (not shown).

[0028] In various embodiments, reactor 115 may also be fluidly connected to and configured to receive chemicals from vessel 110. Vessel 110 may comprise any container suitable for holding or otherwise containing chemicals. Vessel 110 may be configured to hold solid or liquid chemicals and may further be configured to convert the solid or liquid to a vapor.

[0029] In various embodiments, system 100 may further include a sensor system 125 configured to monitor or otherwise detect various parameters within system 100 and / or reactor 115. In an exemplary embodiment, sensor system 125 may include a plurality of pressure sensors configured to measure and / or control the pressure and / or flow rate of a gas. For example, sensor system 125 may include a pressure transducer 300 (FIG. 3A) and / or a pressure-flow controller 500 (FIG. 5). In various embodiments, all or a portion of sensor system 125 may be disposed outside reactor 115. Additionally or alternatively, all or a portion of sensor system 125 may be disposed inside reactor 115.

[0030] In various embodiments, system 100 may further include a controller (130) in communication with sensor system 125. For example, controller 130 may receive output signals from sensor system 125 and / or send control signals to sensor system 125. Controller 130 may include any suitable device or system for processing and analyzing data and / or signals (such as output signals from a pressure sensor).

[0031] In various embodiments, the system 100 may further include an exhaust system 120 configured to facilitate exhausting gases from the reactor 115. In various embodiments, the exhaust system 120 may include a pump (not shown) to remove gases from features of the reactor 115 and / or apply suction.

[0032] In an exemplary embodiment, the reactor 115 may comprise a reaction chamber 205 that includes a reaction space 235 above and / or around the substrate 215. For example, the reaction chamber 205 may comprise sidewalls and a bottom coupled to the sidewalls that form an enclosed volume.

[0033] In various embodiments, the reactor 115 may further include a gas distribution system 200 for delivering vapors from the vessel 110 into the reaction chamber 205 and reaction space 235. In an exemplary embodiment, the gas distribution system 200 is disposed above the susceptor 210.

[0034] In various embodiments, gas distribution system 200 may be disposed adjacent to reaction chamber 205. For example, gas distribution system 200 may be disposed on a sidewall of reaction chamber 205 opposite the bottom of reaction chamber 205. In some embodiments, gas distribution system 200 may be fixed to the sidewall, while in other cases, gas distribution system 200 may simply rest on the sidewall of reaction chamber 205. In various embodiments, gas distribution system 200, together with the sidewall of reaction chamber 205, forms an enclosed space that includes reaction space 235.

[0035] In various embodiments, the reaction chamber 205 may further include a lift pin pad 240 disposed at or near the bottom of the reaction chamber 205 .

[0036] In various embodiments, the reactor 115 may further include a substrate mounting unit disposed within the reaction chamber 205 of the reactor 115. The substrate mounting unit may include a susceptor 210 for supporting the substrate 215 and a heater (not shown) for heating the substrate 215 supported by the susceptor 210. The heater may be embedded within the susceptor 210. The substrate mounting unit may further include a pedestal 280 for supporting the susceptor 210. For loading / unloading the substrate 215, the substrate mounting unit may be configured to be vertically movable (up and down) by being connected to a drive unit (not shown). For example, as shown in FIG. 2A , the drive unit can position the susceptor 210 at a first position (also referred to as a processing position) to deposit a film or otherwise perform a process on the substrate 215. At the first position, the susceptor 210 may be positioned within or adjacent to the reaction space 235. For example, the susceptor 210 can be positioned to position the substrate 215 within the reaction space 235. As shown in Figure 2B, the drive unit may position the susceptor 210 at a second position (also referred to as an unload / load position) where a substrate is loaded onto or unloaded from the susceptor 210.

[0037] In various embodiments, the susceptor 210 may comprise a first surface 250 and an opposing second surface 255. The first surface 250 may comprise a central region 315 defined by an area on the first surface 250 that receives the substrate 215 and is in direct contact with the substrate 215. In some embodiments, the central region 315 is recessed, forming a pocket surrounded by raised surfaces (e.g., as illustrated in FIGS. 3A-3B ). In such embodiments, the substrate 215 is sized to be positioned within the central region 315 and directly on the first surface 250.

[0038] In various embodiments, the susceptor 210 may further include a plurality of through-holes 230, such as a first through-hole 230(a), a second through-hole 230(b), and a third through-hole 230(c), extending from the first surface 250 to the second surface 255. The plurality of through-holes 230 may be disposed within a central region 315 occupied by the substrate 215.

[0039] In various embodiments, the susceptor 210 may further include a plurality of lift pins 220, such as a first lift pin 220(a), a second lift pin 220(b), and a third lift pin 220(c). Each lift pin 220 may be disposed within a respective through-hole of the plurality of through-holes. In various embodiments, a lift pin pad 240 may be disposed directly below the lift pins 220 and the through-holes 230, allowing the lift pins 220 to contact the lift pin pad 240.

[0040] In various embodiments, the susceptor 210 may further comprise a plurality of gas channels 305 embedded within the susceptor 210 and configured to flow gases or vapors. In some cases, the gas channels 305 may extend through the susceptor 210 and connect to gas lines at the second surface 255 of the susceptor 210. In other cases, the gas channels 305 may be configured to join gas lines within the pedestal 280. In various embodiments, the gas channels 305 may be fluidly connected to the exhaust system 120.

[0041] 3-4, in an exemplary embodiment, the susceptor 210 includes three gas channels, e.g., a first gas channel 305(a), a second gas channel 305(b), and a third gas channel 305(c), each having an opening in the first surface 250 of the susceptor 210. The opening of each gas channel 305(a), 305(b), and 305(c) may be disposed within the central region 315 and adjacent to the outer edge 400 of the central region 315. For example, the opening of the gas channel 305 may be 0.5 mm to 10 mm from the outer edge 400. Additionally, the openings of each gas channel 305(a), 305(b), and 305(c) may be disposed 120 degrees from each other.

[0042] In this embodiment, each gas channel 305(a), 305(b), 305(c) may be fluidly coupled to a respective pressure transducer 300. For example, the first gas channel 305(a) may be coupled to the first pressure transducer 300(a) via a first gas line, and the second gas channel 305(b) may be coupled to the second pressure transducer 300(b) via a second gas line. The pressure transducers 300(a), 300(b) may be positioned downstream of the openings of the gas channels 305. Each pressure transducer 300 may be coupled to the exhaust system 120 and the controller 130. The exhaust system 120 may be coupled downstream of the pressure transducers 300(a), 300(b).

[0043] 5A-5B, in an exemplary embodiment, the gas channels 305 may be disposed adjacent to the through-holes 230 and the lift pins 220. In this embodiment, the susceptor 210 includes six gas channels 305, with each through-hole 230 having two associated gas channels 305 located adjacent to the through-hole 230 (e.g., within 2-10 mm of the through-hole 230). Alternatively, each through-hole 230 may have only one adjacent gas channel 305.

[0044] In this embodiment, each gas channel 305 (or pair of gas channels) may be fluidly coupled to a respective pressure and flow controller 500. For example, each gas channel or pair of gas channels located near one lift pin may be coupled to one pressure and flow controller 500 via a gas line. Each pressure and flow controller 500 may be coupled to the inert gas source 105, the exhaust system 120, and the controller 130. The pressure and flow controller 500 may be coupled upstream of and in-line with the inert gas source 105 and the gas channels 305.

[0045] 3-4 , in various embodiments, the susceptor 210 may further include a plurality of gas ports 310, such as a first gas port 310(a), a second gas port 310(b), and a third gas port 310(c), configured to allow a flow of gas therethrough. In an exemplary embodiment, the gas ports 310(a), 310(b), and 310(c) may be disposed on the first surface 250 of the susceptor 210 and may be positioned 120 degrees from one another. The gas ports 310 may be disposed radially outward from the central region 315. In other words, the gas ports 310 are positioned outward from the outer edge 40 of the central region 315. Additionally, each gas port 310(a), 310(b), and 310(c) may be directly adjacent to a respective gas channel 305. For example, each gas port may be radially aligned with the opening of a respective gas channel 305 and radially spaced 1 mm to 10 mm apart from one another. The gas ports 310 may be fluidly coupled to the inert gas source 105 (FIG. 1).

[0046] 2A and 3-4, system 100 may be configured to detect lift pin errors. For example, system 100 may detect a stuck lift pin, where lift pin 220 is stuck in through-hole 230 at an upper position above through-hole 230 (as shown in FIG. 3B).

[0047] In an exemplary embodiment, the controller 130 may position the susceptor 210 in a processing position (as shown in FIG. 2A ). The controller 130 may then initiate gas flow from the inert gas source 105 to the gas ports 310(a), 310(b), and 310(c). For example, the controller 130 may activate a valve upstream of the inert gas source 105 (not shown). As gas begins to flow through the gas ports 310(a), 310(b), and 310(c), a pump in the exhaust system applies suction to the openings of the gas channels 305, and the pressure transducers 300(a), 300(b) measure the gas flow rate and / or flow pressure. If the substrate 215 is in direct contact with the first surface 250 of the susceptor 210, the openings of the gas channels 305 will be blocked or otherwise covered by the substrate 215, causing a drop in pressure measured by the pressure transducer 300. Alternatively, if the substrate 215 is not in direct contact with the first surface 250 and the openings of the gas channels 305 are not blocked by the substrate 215, the pressure through the gas channels 305 will increase. The pressure transducers may transmit the measured pressure / flow rate for each gas channel 305 to the controller 130. The controller 130 can then detect the change in pressure / flow rate. For example, the controller 130 may detect an increase or decrease in pressure / flow rate. If the controller 130 detects an increase in pressure or flow rate, this may indicate a lift pin error, and the controller 130 can generate an error signal in response to the increase in pressure / flow rate. The error signal can stop further processing of the substrate 215 or other functions of the system 100.

[0048] Alternatively, the controller 130 may determine that the measured pressure / flow rate is below a threshold value. If the controller 130 determines that the measured pressure / flow rate is above a threshold value, this may indicate a lift pin error, and the controller 130 may generate an error signal in response to the measured pressure being greater than the threshold pressure. The error signal may stop further processing of the substrate 215 or other functions of the system 100.

[0049] 2A and 5A-5B, system 100 can be configured to detect a lift pin error. For example, system 100 can detect a stuck lift pin, where lift pin 220 is stuck in through-hole 230 at an upper position above through-hole 230 (as shown in FIG. 3B).

[0050] In an exemplary embodiment, the controller 130 may position the susceptor 210 in a processing position (as illustrated in FIG. 2A ). The controller 130 may then initiate gas flow from the inert gas source 105 through the pressure and flow controller 500 and into the gas channels 305. The pressure and flow controller 500 may be set to allow a minimum or target amount of gas to flow therethrough into the gas channels 305, such that the pressure associated with that set flow rate is lower than the pressure in the reaction space 235. The gas then flows through the gas channels 305 toward the first surface 250 of the susceptor 210. In some embodiments, a pump in the exhaust system 120 may operate to apply a suction force simultaneously as the gas flows through the pressure and flow controller 500 and the gas channels 305. When the substrate 215 is in direct contact with the first surface 250 of the susceptor 210, the openings of the gas channels 305 are blocked or otherwise covered by the substrate 215, preventing or substantially impeding gas flow, which causes a decrease in flow rate or maintains the minimum or target pressure. Alternatively, when the substrate 215 is not in direct contact with the first surface 250 and the openings of the gas channels 305 are not blocked by the substrate 215, the flow rate through the gas channels 305 increases. The pressure and flow controller 500 may send an actual flow rate to the controller 130, which may increase or decrease to maintain a specific pressure in each gas channel 305. The controller 130 may receive the actual flow rate to detect changes in pressure / flow rate. For example, the controller 130 may detect an increase or decrease in pressure / flow rate. If the controller 130 detects an increase in pressure or flow rate from the target pressure / flow rate, this may indicate a lift pin error, and the controller 130 may generate an error signal in response to the increase in pressure / flow rate. The error signal may stop further processing of the substrate 215 or other functions of the system 100 .

[0051] In the foregoing description, the present technology has been described with reference to certain exemplary embodiments. The specific examples shown and described are illustrative of the present technology and its best mode and are not intended to limit the scope of the present technology in any way. Also, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the present methods and systems may not be described in detail. Furthermore, connecting lines shown in the various figures are intended to represent example functional relationships and / or steps between the various elements. Many alternative or additional functional relationships or physical connections may exist in an actual system.

[0052] The present technology has been described with reference to specific exemplary embodiments. However, various modifications and changes may be made without departing from the scope of the present technology. The description and drawings are to be considered in an illustrative manner, not restrictive, and all variations are intended to be included within the scope of the present technology. Thus, the scope of the present technology should be determined solely by the general embodiments described and their legal equivalents, rather than by the specific examples described above. For example, steps described in an embodiment of a method or process may be performed in any order unless otherwise explicitly specified, and are not limited to the explicit order presented in the particular example. Furthermore, the components and / or elements described in an embodiment of any device may be assembled or otherwise operably configured in various forms to produce substantially the same results as the present technology, and therefore are not limited to the specific configurations described in the particular example.

[0053] Benefits, other advantages, and solutions to problems have been described above with reference to specific embodiments. It should be noted that any benefit, advantage, solution to a problem, or any element that may cause or make more pronounced any particular benefit, advantage, or solution, is not to be construed as a critical, required, or essential feature or component.

[0054] The terms "comprises," "comprising," or any variation thereof are intended to indicate a non-limiting inclusion, such that a process, method, article, composition, or apparatus comprising the listed elements includes not only those elements described, but may also include other elements not expressly described or inherent to such process, method, article, composition, or apparatus. In addition to those not specifically described, other combinations and / or variations of the above-described structures, configurations, applications, proportions, elements, materials, or components used in the practice of the present technology may be changed or specifically adapted to particular environments, manufacturing specifications, design parameters, or other operating requirements without departing from the general principles thereof.

[0055] The present technology has been described above with reference to exemplary embodiments. However, changes and modifications may be made to the exemplary embodiments without departing from the scope of the technology. These and other changes or modifications are intended to be included within the scope of the technology, as expressed in the following claims.

Claims

1. 1. An apparatus comprising: A susceptor, a first surface and a second surface parallel to the first surface; a recessed area in the first surface sized to receive a wafer; a first plurality of through holes extending from the first surface to the second surface and disposed within the recessed area; a plurality of lift pins disposed within the first plurality of through holes; and a susceptor including a plurality of gas channels having openings in the first surface and the recessed area; a plurality of pressure sensors fluidly coupled to the plurality of gas channels; a controller in communication with the plurality of pressure sensors, detecting a change in pressure or flow rate within the plurality of gas channels; determining a failure of at least one of the plurality of lift pins based on the detected change in pressure or flow rate; a controller configured to generate an error signal based on the determined fault.

2. The apparatus of claim 1 , wherein the openings of at least two of the plurality of gas channels are immediately adjacent to a respective through-hole of the first plurality of through-holes.

3. The apparatus of claim 1 , wherein the plurality of gas channels comprises six channels.

4. The apparatus of claim 1 , wherein the openings of the plurality of gas channels are disposed 120 degrees from each other.

5. The apparatus of claim 1 , wherein the openings of the plurality of gas channels are disposed adjacent to and radially inward from an outer edge of the recessed region.

6. The apparatus of claim 1 , wherein the plurality of gas channels comprises a maximum of three channels.

7. The apparatus of claim 1 , further comprising a plurality of gas ports disposed on the first surface and coupled to an inert gas supply.

8. The apparatus of claim 7 , wherein the plurality of gas ports are positioned radially outward from the recessed area.

9. The apparatus of claim 7 , wherein the plurality of gas ports are disposed adjacent the openings of the plurality of gas channels.

10. The apparatus of claim 7 , further comprising a pump coupled to the plurality of gas ports and configured to apply a suction force to the first surface.

11. The apparatus of claim 1 , further comprising a pump coupled to the plurality of gas channels and configured to evacuate air from the plurality of gas channels.

12. The apparatus of claim 1 , wherein determining a failure of at least one lift pin comprises detecting an increase in pressure or flow rate.

13. 1. An apparatus comprising: A susceptor, a first surface and a second surface parallel to the first surface; an interior region, which is a circular region on the first surface configured to support a wafer; a first plurality of through holes extending from the first surface to the second surface and disposed within the interior region; a plurality of lift pins disposed within the first plurality of through holes; and a susceptor comprising a plurality of gas channels having openings in the first surface and the interior region, the plurality of gas channels including at least three gas channels, the openings of the plurality of gas channels being disposed adjacent an outer edge of the interior region, and the openings of the plurality of gas channels being disposed 120 degrees from one another; a plurality of pressure sensors fluidly coupled to the plurality of gas channels; a controller in communication with the plurality of pressure sensors, detecting a change in pressure or gas flow rate within at least one of the plurality of gas channels; determining a failure of at least one lift pin among the plurality of lift pins based on the detected change in pressure or flow rate; a controller configured to generate an error signal based on the determined fault.

14. 14. The apparatus of claim 13, further comprising a plurality of gas ports disposed on the first surface and coupled to an inert gas supply, the plurality of gas ports being positioned radially outward from the interior region.

15. 15. The apparatus of claim 14, wherein the gas ports are positioned adjacent the openings of the gas channels and are spaced 120 degrees apart from one another.

16. 15. The apparatus of claim 14, further comprising a pump fluidly coupled to the plurality of gas ports and configured to facilitate directing airflow away from the first surface.

17. The apparatus of claim 13 , wherein determining a failure of at least one lift pin comprises detecting an increase in pressure or gas flow rate.

18. 1. A system comprising: A susceptor, a first surface and a second surface parallel to the first surface; an interior region, the interior region being a circular region and a recessed region on the first surface configured to support a wafer; a first plurality of through holes extending from the first surface to the second surface and disposed within the recessed area; a plurality of lift pins disposed within the first plurality of through holes; and a susceptor comprising a plurality of gas channels having openings in the first surface and the interior region, the plurality of gas channels including at least three channels; a plurality of pressure sensors fluidly coupled to the plurality of gas channels; a controller in communication with the plurality of pressure sensors, detecting a change in pressure or gas flow rate within the plurality of gas channels; determining a failure of at least one lift pin of the plurality of lift pins based on the detected increase in pressure; a controller configured to generate an error signal based on the determined fault; a pump coupled to the plurality of gas channels and configured to evacuate air from the plurality of gas channels.

19. 20. The system of claim 18, wherein each pressure sensor of the plurality of pressure sensors comprises a pressure transducer, and the pump is downstream of the plurality of pressure sensors.

20. 20. The system of claim 18, wherein each pressure sensor of the plurality of pressure sensors comprises a pressure and flow controller, each pressure and flow controller fluidly coupled to an inert gas source and configured to receive inert gas from the inert gas source.

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