Apparatus for manufacturing light emitting device

Abstract

To provide a manufacturing apparatus of a light-emitting device capable of continuously performing processes from formation to sealing of a light-emitting element.SOLUTION: To provide a manufacturing device of a light-emitting device capable of continuously performing a film forming process for forming an organic EL element, a lithography process, an etching process, and a sealing process by protective layer film formation, and capable of forming a fine, high-luminance, and high-reliability organic EL element. In addition, the light-emitting device is an in-line type in which apparatuses are arranged in the order of steps of the light-emitting device and can be manufactured with high throughput.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an apparatus and a method for manufacturing a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specific examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, memory devices, imaging devices, and operation methods thereof or manufacturing methods thereof. [Background technology]

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet devices, and notebook computers. Furthermore, with the rise in resolution, stationary display devices such as televisions and monitors also require higher definition. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of display devices that can be applied to display panels include liquid crystal display devices, light-emitting devices equipped with light-emitting elements such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs: Light Emitting Diodes), and electronic paper that displays using electrophoresis methods.

[0005] An organic EL element has a structure in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A display device using such an organic EL element does not require a backlight, which is necessary in liquid crystal display devices and the like, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2002-324673 Summary of the Invention [Problem to be solved by the invention]

[0007] Known organic EL display devices capable of full-color display include a configuration in which a white light-emitting element is combined with a color filter, and a configuration in which RGB light-emitting elements are formed on the same surface.

[0008] The latter configuration is ideal in terms of power consumption, and currently, in the manufacture of small and medium-sized panels, the luminescent materials are painted separately using metal masks, etc. However, because the process using metal masks has low alignment accuracy, the area occupied by the luminescent element within the pixel must be small, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks have problems in increasing pixel density or light emission intensity. To increase the aperture ratio, it is preferable to enlarge the area of ​​the light-emitting element using a lithography process or the like. However, the reliability of the materials that make up the light-emitting element deteriorates when impurities (water, oxygen, hydrogen, etc.) in the air invade, so multiple processes must be performed in an area with a controlled atmosphere.

[0010] Alternatively, when light-emitting elements (also called light-emitting devices) are manufactured using a vacuum deposition method that uses a metal mask, there is a problem that multiple lines of manufacturing equipment are required. For example, because the metal mask needs to be cleaned periodically, at least two or more lines of manufacturing equipment must be prepared, and one manufacturing equipment must be used for manufacturing while the other manufacturing equipment is being maintained. Therefore, when considering mass production, multiple lines of manufacturing equipment are required. Therefore, there is a problem that the initial investment for introducing the manufacturing equipment is very large.

[0011] Therefore, one object of one embodiment of the present invention is to provide a manufacturing apparatus for a light-emitting device that can perform steps from forming a light-emitting element to sealing continuously without exposure to the atmosphere, or to provide a manufacturing apparatus for a light-emitting device that can form a light-emitting element without using a metal mask, or to provide a manufacturing method for a light-emitting device.

[0012] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0013] One aspect of the present invention relates to an apparatus for manufacturing a light-emitting device.

[0014] One aspect of the present invention has first to eleventh clusters and first to tenth load lock chambers, wherein the first cluster is connected to the second cluster via the first load lock chamber, the second cluster is connected to the third cluster via the second load lock chamber, the third cluster is connected to the fourth cluster via the third load lock chamber, the fourth cluster is connected to the fifth cluster via the fourth load lock chamber, the fifth cluster is connected to the sixth cluster via the fifth load lock chamber, the sixth cluster is connected to the seventh cluster via the sixth load lock chamber, the seventh cluster is connected to the eighth cluster via the seventh load lock chamber, the eighth cluster is connected to the ninth cluster via the eighth load lock chamber, the ninth cluster is connected to the tenth cluster via the ninth load lock chamber, and the tenth cluster is connected to the eleventh cluster via the tenth load lock chamber. The light-emitting device manufacturing apparatus is connected via a chamber, and the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster are controlled to a reduced pressure, and the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster are controlled to an inert gas atmosphere. The first cluster to the eleventh cluster each have a transfer device. The first cluster, the fourth cluster, the seventh cluster, and the eleventh cluster each have a face-up type film formation device and a face-down type film formation device. The third cluster, the sixth cluster, and the ninth cluster each have an etching device. The second cluster, the fifth cluster, and the eighth cluster each have a plurality of devices for performing lithography processes. The tenth cluster has an etching device. The face-down type film formation device is a light-emitting device manufacturing apparatus having a substrate reversing device.

[0015] The system may further include a twelfth cluster and an eleventh load lock chamber, the twelfth cluster being connected to the first cluster via the eleventh load lock chamber, the twelfth cluster being controlled to an inert gas atmosphere, and the twelfth cluster having a cleaning device and a baking device.

[0016] Additionally, the twelfth cluster may include a load chamber and the eleventh cluster may include an unload chamber.

[0017] The system may further include a thirteenth cluster, a fourteenth cluster, a twelfth load lock chamber, and a thirteenth load lock chamber, wherein the thirteenth cluster is connected to the third cluster via the third load lock chamber, the thirteenth cluster is connected to the fourth cluster via the twelfth load lock chamber, the fourteenth cluster is connected to the sixth cluster via the sixth load lock chamber, and the fourteenth cluster is connected to the seventh cluster via the thirteenth load lock chamber, the thirteenth cluster and the fourteenth cluster are controlled to an inert gas atmosphere, and the thirteenth cluster and the fourteenth cluster may include a cleaning device and a baking device.

[0018] The face-down type film forming apparatus is preferably one or more selected from a vapor deposition apparatus and a sputtering apparatus.

[0019] The face-up type film forming apparatus is preferably one or more selected from a CVD apparatus and an ALD apparatus.

[0020] The etching apparatuses included in the third cluster, the sixth cluster, and the ninth cluster are preferably dry etching apparatuses.

[0021] The etching device in the tenth cluster is preferably a wet etching device.

[0022] The multiple devices that perform the lithography process may include a coating device, an exposure device, a developing device, and a baking device, or may include a coating device and a nanoimprint device.

[0023] The substrate inversion device has a stage in which an electrostatic suction unit, an electromagnet unit and a cylinder unit are stacked in this order, and a rotation mechanism, and the electrostatic suction unit can hold the substrate, and the rotation mechanism can invert the stage.

[0024] The cylinder unit has the function of moving a plurality of pusher pins up and down, and the pusher pins can be provided in through holes provided in the electrostatic adsorption unit and the electromagnet unit.

[0025] A face-down type film formation device is provided with a mask jig and an alignment mechanism. The alignment mechanism is connected to a lifting mechanism, and after the stage is inverted, the mask jig is aligned and brought into contact with the substrate, and an electromagnet unit is used to tightly attach the mask jig to the substrate. [Effects of the Invention]

[0026] By using one embodiment of the present invention, it is possible to provide a manufacturing apparatus for a light-emitting device that can perform steps from formation of a light-emitting element to sealing continuously without exposure to the atmosphere, or a manufacturing apparatus for a light-emitting device that can form a light-emitting element without using a metal mask, or a manufacturing method for a light-emitting device.

[0027] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0028] [Figure 1] FIG. 1 is a block diagram illustrating the manufacturing apparatus. [Figure 2] FIG. 2 is a diagram illustrating the manufacturing apparatus. [Figure 3] FIG. 3 is a diagram illustrating the manufacturing apparatus. [Figure 4] FIG. 4 is a diagram illustrating the manufacturing apparatus. [Figure 5] FIG. 5 is a diagram illustrating the manufacturing apparatus. [Figure 6] FIG. 6 is a block diagram illustrating the manufacturing apparatus. [Figure 7] FIG. 7 is a diagram illustrating a manufacturing apparatus. [Figure 8] FIG. 8 is a diagram illustrating the manufacturing apparatus. [Figure 9] FIG. 9 is a block diagram illustrating the manufacturing apparatus. [Figure 10] FIG. 10 is a diagram illustrating the manufacturing apparatus. [Figure 11] FIG. 11 is a diagram illustrating a manufacturing apparatus. [Figure 12] 12A to 12C are diagrams illustrating a film forming apparatus. [Figure 13] 13A to 13C are diagrams illustrating the loading of a substrate into a film forming apparatus and the operation of the film forming apparatus. [Figure 14] 14A and 14B are diagrams illustrating the operation of the film forming apparatus, and Fig. 14C is a diagram illustrating a mask unit. [Figure 15] FIG. 15 is a diagram illustrating a display device. [Figure 16] 16A to 16C are diagrams illustrating a display device. [Figure 17] 17A to 17D are diagrams illustrating a method for manufacturing a display device. [Figure 18] 18A to 18D are diagrams illustrating a method for manufacturing a display device. [Figure 19] 19A to 19E are diagrams illustrating a method for manufacturing a display device. [Figure 20] FIG. 20 is a diagram illustrating a manufacturing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0029] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. In addition, hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0030] (Embodiment 1) In this embodiment, a manufacturing apparatus for a light-emitting device according to one embodiment of the present invention will be described with reference to the drawings.

[0031] One aspect of the present invention is a manufacturing apparatus used primarily for forming display devices having light-emitting devices such as organic EL elements. To miniaturize organic EL elements or increase the pixel area, a lithography process is preferably used. However, the intrusion of impurities such as water, oxygen, and hydrogen into organic EL elements can impair their reliability. Therefore, measures are required to prevent the surface and side surfaces of patterned organic layers from being exposed to the atmosphere and to maintain a low dew point atmosphere from the manufacturing stage.

[0032] The manufacturing apparatus of one embodiment of the present invention can continuously perform the film formation process, lithography process, etching process, and sealing process for forming an organic EL device without exposure to the atmosphere. Therefore, it is possible to form a fine, high-brightness, and highly reliable organic EL device. Furthermore, the manufacturing apparatus of one embodiment of the present invention is an in-line type in which the apparatuses are arranged in the order of the processes for the light-emitting device, allowing for high-throughput manufacturing.

[0033] Furthermore, a large substrate such as a glass substrate can be used as a support substrate for forming the organic EL elements. A glass substrate on which pixel circuits and the like have been formed in advance can be used as the support substrate, and the organic EL elements can be formed on these circuits. As the glass substrate, for example, a large rectangular substrate such as G5 to G10 can be used. However, the glass substrate is not limited to these, and a round substrate, a small substrate, etc. can also be used.

[0034] <Configuration example 1> Figure 1 is a block diagram illustrating a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The manufacturing apparatus has multiple clusters arranged in the order of processes. In this specification, a group of devices that share a transport device or the like is referred to as a cluster. A substrate on which a light-emitting device is to be formed moves through the clusters in order and undergoes each process.

[0035] 1 is an example of a manufacturing apparatus having clusters C1 to C14. Clusters C1 to C14 are connected in order, and a substrate 60a inserted into cluster C1 can be taken out of cluster C14 as a substrate 60b on which a light-emitting device is formed.

[0036] Here, clusters C1, C3, C5, C7, C9, C11, and C13 have equipment groups for performing processes under controlled atmosphere, and clusters C2, C4, C6, C8, C10, C12, and C14 have equipment groups for performing vacuum processes (reduced pressure processes).

[0037] Clusters C1, C5, and C9 mainly have equipment for cleaning and baking substrates. Clusters C2, C6, and C10 mainly have equipment for forming organic compounds contained in light-emitting devices. Clusters C3, C7, and C11 mainly have equipment for performing lithography processes. Clusters C4, C8, and C12 mainly have equipment for performing etching and ashing processes. Cluster C13 has equipment for etching processes and cleaning substrates. Cluster C14 mainly has equipment for forming organic compounds contained in light-emitting devices and equipment for forming protective films that seal light-emitting devices.

[0038] Next, the clusters C1 to C14 will be described in detail with reference to FIGS.

[0039] <Cluster C1 to Cluster C4> 2 is a top view illustrating clusters C1 to C4. Cluster C1 is connected to cluster C2 via load lock chamber B1. Cluster C2 is connected to cluster C3 via load lock chamber B2. Cluster C3 is connected to cluster C4 via load lock chamber B3. Cluster C4 is connected to cluster C5 (see FIG. 3) via load lock chamber B4.

[0040] <Atmospheric pressure process equipment A> Cluster C1 and cluster C3 each have atmospheric pressure process equipment A. Cluster C1 has a transfer chamber TF1 and atmospheric pressure process equipment A (atmospheric pressure process equipment A1, A2) that mainly performs processes under atmospheric pressure. Cluster C3 has a transfer chamber TF3 and atmospheric pressure process equipment A (atmospheric pressure process equipment A3 to A7). Cluster C1 is also provided with a load chamber LD.

[0041] The number of atmospheric pressure process equipment A in each cluster may be one or more depending on the purpose. Furthermore, the atmospheric pressure process equipment A is not limited to processes under atmospheric pressure, and may be controlled to a slightly negative or positive pressure compared to atmospheric pressure. Furthermore, when multiple atmospheric pressure process equipment A are provided, the pressures in each may be different.

[0042] Valves for introducing inert gas (IG) are connected to the transfer chambers TF1 and TF3 and the atmospheric pressure process equipment A, allowing for the creation of an inert gas atmosphere. The inert gas can be nitrogen or a noble gas such as argon or helium. It is also preferable for the inert gas to have a low dew point (for example, below -50°C). By carrying out the process in an inert gas atmosphere with a low dew point, the incorporation of impurities can be prevented, resulting in the formation of highly reliable organic EL elements.

[0043] The atmospheric pressure process equipment A of the cluster C1 can be a cleaning equipment, a baking equipment, etc. For example, a spin cleaning equipment, a hot plate type baking equipment, etc. The baking equipment can be a vacuum baking equipment.

[0044] The atmospheric pressure process equipment A of cluster C3 can be an equipment for performing a lithography process. For example, when performing a photolithography process, a resin (photoresist) coating equipment, an exposure equipment, a developing equipment, a baking equipment, etc. can be applied. When performing a lithography process using nanoimprinting, a resin (UV curable resin, etc.) coating equipment, a nanoimprinting equipment, etc. can be applied. In addition, depending on the application, a cleaning equipment, a wet etching equipment, a coating equipment, a resist stripping equipment, etc. can also be applied to the atmospheric pressure process equipment A.

[0045] Cluster C1 shows an example in which atmospheric pressure process equipment A1 and A2 are each connected to transfer chamber TF1 via a gate valve. Cluster C3 shows an example in which atmospheric pressure process equipment A3 to A7 are each connected to transfer chamber TF3 via a gate valve. The provision of gate valves enables pressure control, inert gas species control, and cross-contamination prevention.

[0046] The transfer chamber TF1 is connected to the load chamber LD via a gate valve, and also to the load lock chamber B1 via another gate valve. A transfer device 70a is provided in the transfer chamber TF1. The transfer device 70a can transfer a substrate from the load chamber LD to the atmospheric pressure process equipment A. The transfer device 70a can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B1.

[0047] Transfer chamber TF3 is connected to load lock chamber B2 via a gate valve, and also to load lock chamber B3 via another gate valve. Transfer chamber TF3 is provided with a transfer device 70c. Transfer device 70c can transfer substrates from load lock chamber B2 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B3.

[0048] <Vacuum Process Equipment V> Cluster C2 and cluster C4 each have a vacuum process apparatus V. Cluster C2 has a transfer chamber TF2 and vacuum process apparatus V (vacuum process apparatuses V1 to V4). Cluster C4 has a transfer chamber TF4 and vacuum process apparatus V (vacuum process apparatuses V5 and V6).

[0049] The number of vacuum process devices V in each cluster may be one or more depending on the purpose. A vacuum pump VP is connected to the vacuum process device V, and a gate valve is provided between each vacuum process device V and the transfer chamber TF (transfer chambers TF2 and TF4). Therefore, different processes can be performed in parallel in each vacuum process device V.

[0050] The vacuum process refers to a process carried out in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only a process under high vacuum, but also a process in which a process gas is introduced and pressure is controlled under reduced pressure.

[0051] The transfer chambers TF2 and TF4 are also provided with independent vacuum pumps VP, which can prevent cross-contamination during the processes performed in the vacuum process equipment V.

[0052] The vacuum process equipment V of cluster C2 can be, for example, a deposition equipment such as an evaporation equipment, a sputtering equipment, a CVD (Chemical Vapor Deposition) equipment, or an ALD (Atomic Layer Deposition) equipment. The CVD equipment can be a thermal CVD equipment using heat, or a PECVD (Plasma Enhanced CVD) equipment using plasma. The ALD equipment can be a thermal ALD equipment using heat, or a PEALD (Plasma Enhanced ALD) equipment using plasma-excited reactants.

[0053] As the vacuum process equipment V of the cluster C4, for example, a dry etching equipment, an ashing equipment, etc. can be applied.

[0054] In this embodiment, an apparatus in which a substrate is placed with its film-forming surface facing downward is called a face-down type apparatus. An apparatus in which a substrate is placed with its film-forming surface facing upward is called a face-up type apparatus. Examples of face-down type apparatus include deposition apparatuses such as evaporation apparatuses and sputtering apparatuses. Examples of face-up type apparatus include film-forming apparatuses such as CVD apparatuses and ALD apparatuses, as well as dry etching apparatuses, ashing apparatuses, baking apparatuses, and lithography-related apparatuses. However, the manufacturing apparatus in this embodiment may include apparatuses other than those listed above. For example, a face-up type sputtering apparatus may also be used.

[0055] Transfer chamber TF2 is connected to load lock chamber B1 via a gate valve, and to load lock chamber B2 via another gate valve. Transfer chamber TF2 is provided with a transfer device 70b. Transfer device 70b can transfer a substrate placed in load lock chamber B1 to vacuum process equipment V. It can also transfer a substrate removed from vacuum process equipment V to load lock chamber B2.

[0056] Transfer chamber TF4 is connected to load lock chamber B3 via a gate valve and to load lock chamber B4 via another gate valve. A transfer device 70d is provided in transfer chamber TF4. The transfer device 70d can transfer a wafer from load lock chamber B3 to vacuum process device V and then back to load lock chamber B4.

[0057] Load-lock chambers B1, B2, B3, and B4 are each equipped with a vacuum pump VP and a valve for introducing inert gas. Therefore, the load-lock chambers B1, B2, B3, and B4 can be controlled to a reduced pressure or an inert gas atmosphere. For example, when transferring a substrate from cluster C2 to cluster C3, the load-lock chamber B2 can be depressurized, the substrate can be transferred from cluster C2, and then the load-lock chamber B2 can be set to an inert gas atmosphere before the substrate is transferred to cluster C3.

[0058] The transfer devices 70a, 70b, 70c, and 70d each have a mechanism for transferring a substrate placed on a hand unit. The transfer devices 70a and 70c operate under normal pressure, so the hand unit may be equipped with a vacuum suction mechanism. The transfer devices 70b and 70d operate under reduced pressure, so the hand unit may be equipped with an electrostatic suction mechanism.

[0059] Load lock chambers B1, B2, B3, and B4 are provided with stages 80a, 80b, 80c, and 80d that can place substrates on pins. Note that these are just examples, and stages with other configurations may also be used.

[0060] <Cluster C5 to Cluster C8> 3 is a top view illustrating clusters C5 to C8. Cluster C5 is connected to cluster C6 via load lock chamber B5. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C9 (see FIG. 4) via load lock chamber B8.

[0061] The basic configurations of clusters C5 to C8 are similar to those of clusters C1 to C4, with cluster C5 corresponding to cluster C1, cluster C6 corresponding to cluster C2, cluster C7 corresponding to cluster C3, and cluster C8 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B4 in cluster C5.

[0062] Furthermore, load lock chamber B5 corresponds to load lock chamber B1, load lock chamber B6 corresponds to load lock chamber B2, load lock chamber B7 corresponds to load lock chamber B3, and load lock chamber B8 corresponds to load lock chamber B4.

[0063] Only the configuration will be described below, and for details of the clusters and load lock chambers, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0064] Cluster C5 and cluster C7 each have atmospheric pressure process equipment A. Cluster C5 has transfer chamber TF5 and atmospheric pressure process equipment A (atmospheric pressure process equipment A8, A9) that mainly performs processes under atmospheric pressure. Cluster C7 has transfer chamber TF7 and atmospheric pressure process equipment A (atmospheric pressure process equipment A10 to A14).

[0065] Transfer chamber TF5 is connected to load lock chamber B4 via a gate valve. It is also connected to load lock chamber B5 via another gate valve. A transfer device 70e is provided in transfer chamber TF5. The transfer device 70e can transfer substrates from load lock chamber B4 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B5.

[0066] Transfer chamber TF7 is also connected to load lock chamber B6 via a gate valve. It is also connected to load lock chamber B7 via another gate valve. Transfer chamber TF7 is provided with a transfer device 70g. Transfer device 70g can transfer substrates from load lock chamber B6 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B7.

[0067] Cluster C6 and cluster C8 each have a vacuum process apparatus V. Cluster C6 has a transfer chamber TF6 and a vacuum process apparatus V (vacuum process apparatuses V7 to V10). Cluster C8 has a transfer chamber TF8 and a vacuum process apparatus V (vacuum process apparatuses V11 and V12).

[0068] Transfer chamber TF6 is connected to load lock chamber B5 via a gate valve, and also to load lock chamber B6 via another gate valve. Transfer chamber TF6 is provided with a transfer device 70f. Transfer device 70f can transfer a substrate placed in load lock chamber B5 to vacuum process equipment V. It can also unload a substrate taken out of vacuum process equipment V into load lock chamber B6.

[0069] Transfer chamber TF8 is connected to load lock chamber B7 via a gate valve, and also to load lock chamber B8 via another gate valve. Transfer chamber TF8 is provided with a transfer device 70h. Transfer device 70h can transfer substrates from load lock chamber B7 to vacuum process equipment V. It can also unload substrates taken out of vacuum process equipment V into load lock chamber B8.

[0070] Load lock chambers B5, B6, B7, and B8 are provided with stages 80e, 80f, 80g, and 80h that can place substrates on pins.

[0071] <Cluster C9 to Cluster C12> 4 is a top view illustrating clusters C9 to C12. Cluster C9 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 via load lock chamber B10. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 (see FIG. 5) via load lock chamber B12.

[0072] The basic configurations of clusters C9 to C12 are similar to those of clusters C1 to C4, with cluster C9 corresponding to cluster C1, cluster C10 corresponding to cluster C2, cluster C11 corresponding to cluster C3, and cluster C12 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B8 in cluster C5.

[0073] Furthermore, load lock chamber B9 corresponds to load lock chamber B1, load lock chamber B10 corresponds to load lock chamber B2, load lock chamber B11 corresponds to load lock chamber B3, and load lock chamber B12 corresponds to load lock chamber B4.

[0074] Only the configuration will be described below, and for details of the clusters and load lock chambers, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0075] Cluster C9 and cluster C11 each have atmospheric pressure process equipment A. Cluster C9 has transfer chamber TF9 and atmospheric pressure process equipment A (atmospheric pressure process equipment A15, A16) that mainly performs processes under atmospheric pressure. Cluster C11 has transfer chamber TF11 and atmospheric pressure process equipment A (atmospheric pressure process equipment A17 to A21).

[0076] Transfer chamber TF9 is connected to load lock chamber B8 via a gate valve. It is also connected to load lock chamber B9 via another gate valve. A transfer device 70i is provided in transfer chamber TF9. The transfer device 70i can transfer substrates from load lock chamber B8 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B9.

[0077] The transfer chamber TF11 is also connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transfer device 70k is provided in the transfer chamber TF11. The transfer device 70k can transfer a substrate from the load lock chamber B10 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B11.

[0078] Cluster C10 and cluster C12 each have a vacuum process apparatus V. Cluster C10 has a transfer chamber TF10 and vacuum process apparatus V (vacuum process apparatuses V13 to V16). Cluster C12 has a transfer chamber TF12 and vacuum process apparatus V (vacuum process apparatuses V17 and V18).

[0079] Transfer chamber TF10 is connected to load lock chamber B9 via a gate valve. It is also connected to load lock chamber B10 via another gate valve. A transfer device 70j is provided in transfer chamber TF10. The transfer device 70j can transfer a substrate placed in load lock chamber B9 to vacuum process equipment V. It can also transfer a substrate removed from vacuum process equipment V to load lock chamber B10.

[0080] Transfer chamber TF12 is connected to load lock chamber B11 via a gate valve. It is also connected to load lock chamber B12 via another gate valve. A transfer device 70m is provided in transfer chamber TF12. The transfer device 70m can transfer a substrate from load lock chamber B11 to vacuum process equipment V and then unload it into load lock chamber B12.

[0081] In the load lock chambers B9, B10, B11, and B12, stages 80i, 80j, 80k, and 80m that can place a substrate on pins are provided.

[0082] <Cluster C13, C14> 5 is a top view illustrating clusters C13 and C14. Cluster C13 is connected to cluster C14 via load lock chamber B13. Descriptions common to clusters C1, C2, etc. will be omitted.

[0083] Cluster C13 has atmospheric pressure process equipment A. Cluster C13 has transfer chamber TF13 and atmospheric pressure process equipment A (atmospheric pressure process equipment A22, A23) that mainly performs processes under atmospheric pressure.

[0084] The atmospheric pressure process equipment A of the cluster C13 can be an etching equipment, a baking equipment, etc. For example, it can be a wet etching equipment, a hot plate type baking equipment, etc. The baking equipment may be a vacuum baking equipment.

[0085] Transfer chamber TF13 is connected to load lock chamber B12 via a gate valve. It is also connected to load lock chamber B13 via another gate valve. A transfer device 70n is provided in transfer chamber TF13. The transfer device 70n can transfer substrates from load lock chamber B12 to atmospheric pressure process equipment A. It can also transfer substrates taken out from atmospheric pressure process equipment A to load lock chamber B13.

[0086] As the vacuum process equipment V of the cluster C14, for example, a deposition equipment such as a vapor deposition equipment, a sputtering equipment, a CVD equipment, an ALD equipment, and an opposing substrate bonding equipment can be applied.

[0087] The load-lock chamber B13 is equipped with a vacuum pump VP and a valve for introducing inert gas. Therefore, the load-lock chamber B13 can be controlled to a reduced pressure or inert gas atmosphere. The load-lock chamber B13 is also equipped with a stage 80n on which a substrate can be placed on pins.

[0088] The transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve, and also to the unload chamber ULD via another gate valve. A transfer device 70p is provided in the transfer chamber TF14. The transfer device 70p can transfer a substrate from the load lock chamber B13 to the vacuum process device V. The transfer device 70p can also unload the substrate taken out of the vacuum process device V into the unload chamber ULD.

[0089] By using the manufacturing apparatus configured as described above, a highly reliable light emitting device sealed with a protective film can be formed.

[0090] For example, successive steps can be performed in an atmosphere-controlled apparatus, from forming organic EL elements emitting light of a first color in clusters C1 to C4, forming organic EL elements emitting light of a second color in clusters C5 to C8, forming organic EL elements emitting light of a third color in clusters C9 to C12, removing unnecessary elements in cluster C13, and forming a protective film in cluster C14. Details of these steps will be described later.

[0091] <Configuration example 2> Figure 6 is a block diagram illustrating a light-emitting device manufacturing apparatus different from that shown in Figure 1. The manufacturing apparatus shown in Figure 6 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14, and is configured by omitting clusters C5 and C9 from the manufacturing apparatus shown in Figure 1. Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14 are connected in order, and substrate 60a inserted into cluster C1 can be removed from cluster C14 as substrate 60b on which a light-emitting device is formed.

[0092] In the manufacturing equipment shown in FIG. 1, clusters C5 and C9 have a cleaning device and a baking device. The processes prior to the cleaning process are etching (dry etching) and ashing. If residual gas components, residues, deposits, etc. from these processes do not adversely affect subsequent processes, the cleaning process can be omitted. Furthermore, if the cleaning process is omitted, there is no need to consider residual moisture on the substrate, and therefore the baking process can also be omitted. Therefore, in some cases, the configuration of FIG. 6 may be used, in which clusters C5 and C9 are omitted from the manufacturing equipment shown in FIG. 1. By omitting clusters C5 and C9, the total number of clusters and the number of load-lock chambers can be reduced.

[0093] <Cluster C1 to Cluster C4> The configuration of clusters C1 to C4 can be the same as that shown in Fig. 2. However, the load lock chamber B4 is connected to cluster C6.

[0094] <Cluster C6, C7, C8, C10> 7 is a top view illustrating clusters C6, C7, C8, and C10. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 (see FIG. 8) via load lock chamber B10.

[0095] The following describes the configuration of the connections between the clusters. For details of the clusters and the load lock chambers, please refer to the descriptions of the clusters C6, C7, C8, and C10 and the load lock chambers B4, B7, B9, and B10.

[0096] Transfer chamber TF6 of cluster C6 is connected to load lock chamber B4 via a gate valve. It is also connected to load lock chamber B6 via another gate valve. Transfer chamber TF6 is provided with a transfer device 70f. Transfer device 70f can transfer a substrate placed in load lock chamber B4 to vacuum process equipment V. It can also unload a substrate taken out of vacuum process equipment V into load lock chamber B6.

[0097] Transfer chamber TF7 of cluster C7 is connected to load lock chamber B6 via a gate valve. It is also connected to load lock chamber B7 via another gate valve. Transfer chamber TF7 is provided with a transfer device 70g. Transfer device 70g can transfer substrates from load lock chamber B6 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B7.

[0098] Transfer chamber TF8 of cluster C8 is connected to load lock chamber B7 via a gate valve. It is also connected to load lock chamber B9 via another gate valve. Transfer chamber TF8 is provided with a transfer device 70h. Transfer device 70h can transfer substrates from load lock chamber B7 to vacuum process equipment V. It can also transfer substrates removed from vacuum process equipment V to load lock chamber B9.

[0099] The transfer chamber TF10 of the cluster C10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. A transfer device 70j is provided in the transfer chamber TF10. The transfer device 70j can transfer a substrate placed in the load lock chamber B9 to the vacuum process device V. It can also transfer a substrate taken out of the vacuum process device V to the load lock chamber B10.

[0100] <Clusters C11, C12, C13, C14> 8 is a top view illustrating clusters C11, C12, C13, and C14. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 via load lock chamber B12. Cluster C13 is connected to cluster C14 via load lock chamber B13.

[0101] The following describes the configuration of connections between clusters. For details of the clusters and load lock chambers, please refer to the descriptions of the clusters C11, C12, C13, and C14 and the load lock chambers B11, B12, and B13.

[0102] The transfer chamber TF11 of the cluster C11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transfer device 70k is provided in the transfer chamber TF11. The transfer device 70k can transfer a substrate from the load lock chamber B10 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B11.

[0103] The transfer chamber TF12 of the cluster C12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transfer device 70m is provided in the transfer chamber TF12. The transfer device 70m can transfer a substrate from the load lock chamber B11 to the vacuum process device V. It can also transfer a substrate taken out of the vacuum process device V to the load lock chamber B12.

[0104] The transfer chamber TF13 of the cluster C13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transfer device 70n is provided in the transfer chamber TF13. The transfer device 70n can transfer a substrate from the load lock chamber B12 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B13.

[0105] The transfer chamber TF14 of the cluster C14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve. A transfer device 70p is provided in the transfer chamber TF14. The transfer device 70p can transfer a substrate from the load lock chamber B13 to the vacuum process device V. It can also unload the substrate taken out of the vacuum process device V into the unload chamber ULD.

[0106] <Configuration example 3> Fig. 9 is a block diagram showing a modified example of the light-emitting device manufacturing apparatus shown in Fig. 6. In the manufacturing apparatus shown in Fig. 9, clusters C4 and C6 are grouped together as one cluster, and clusters C8 and C10 are grouped together as one cluster. The names of these integrated clusters are cluster C4+C6 and cluster C8+C10.

[0107] 6, cluster C4 is connected to cluster C6 via load lock chamber B4. That is, substrates are transported from cluster C4 to cluster C6 for processing.

[0108] Here, cluster C4 and cluster C6 are both clusters that have vacuum process equipment V. Although there is an upper limit to the number of vacuum process equipment that can be connected to a transfer chamber, clusters C4 and C6 can be integrated as long as the number of vacuum process equipment V that they have is below the upper limit. The same is true for cluster C8 and cluster C10. By integrating cluster C4 and cluster C6, the total number of clusters and the number of load lock chambers can be reduced.

[0109] <Cluster C1, C2, C3, C4+C6> Figure 10 is a top view illustrating clusters C1, C2, C3, and C4+C6. The connection configuration of clusters C1 to C3 is the same as the configuration shown in Figure 2. Cluster C3 is connected to clusters C4+C6 via load lock chamber B5. Clusters C4+C6 are connected to cluster C7 (see Figure 11) via load lock chamber B6.

[0110] Cluster C4+C6 includes a transfer chamber TF46 and a vacuum process apparatus V. As the vacuum process apparatus V (vacuum process apparatuses V5 to V10), for example, a deposition apparatus, a sputtering apparatus, a CVD apparatus, an ALD apparatus, an etching apparatus, an ashing apparatus, etc. can be applied.

[0111] The load lock chambers B5 and B6 are provided with a vacuum pump VP and a valve for introducing an inert gas, so that the load lock chambers B5 and B6 can be controlled to a reduced pressure or an inert gas atmosphere.

[0112] Transfer chamber TF46 is connected to load lock chamber B5 via a gate valve, and to load lock chamber B6 via another gate valve. Transfer chamber TF46 is provided with transfer device 70d. Transfer device 70d can transfer substrates from load lock chamber B5 to vacuum process equipment V. It can also transfer substrates removed from vacuum process equipment V to load lock chamber B6.

[0113] <Cluster C7, C8+C10, C11, C12> 11 is a top view illustrating clusters C7, C8+C10, C11, and C12. The connection configuration of clusters C11 and C12 is the same as the configuration shown in FIG. 4. Cluster C7 is connected to cluster C8+C10 via load lock chamber B9. Cluster C8+C10 is connected to cluster C11 via load lock chamber B10.

[0114] Cluster C8+C10 includes a transfer chamber TF810 and vacuum process equipment V. As the vacuum process equipment V (vacuum process equipment V11 to V16), for example, a deposition equipment, a sputtering equipment, a CVD equipment, an ALD equipment, an etching equipment, an ashing equipment, etc. can be applied.

[0115] The load lock chambers B9 and B10 are provided with a vacuum pump VP and a valve for introducing an inert gas, so that the load lock chambers B9 and B10 can be controlled to a reduced pressure or an inert gas atmosphere.

[0116] Transfer chamber TF810 is connected to load lock chamber B9 via a gate valve, and to load lock chamber B10 via another gate valve. Transfer chamber TF810 is provided with transfer device 70h. Transfer device 70h can transfer substrates from load lock chamber B9 to vacuum process device V. It can also transfer substrates removed from vacuum process device V to load lock chamber B10.

[0117] <Cluster C13, C14> The configuration of clusters C13 and C14 can be the same as the configuration shown in FIG.

[0118] <Configuration of film deposition equipment> 12A is a diagram illustrating a vacuum process apparatus V (a face-down type film formation apparatus) in which the surface of the substrate to be film-formed faces downward, and here illustrates a film formation apparatus 30. For clarity, the diagram is a see-through view of the chamber wall, and the gate valve is omitted.

[0119] The film forming apparatus 30 has a film forming material supply unit 31, a mask unit 32, and a stage 50 for placing a substrate 60. For example, if the film forming apparatus 30 is an evaporation apparatus, the film forming material supply unit 31 is a portion where an evaporation source is placed. Also, if the film forming apparatus 30 is a sputtering apparatus, the film forming material supply unit 31 is a portion where a target (cathode) is placed.

[0120] The details of the stage 50 are shown in the exploded view of Figure 12B. The stage 50 has a configuration in which a cylinder unit 33, an electromagnet unit 34, and an electrostatic adsorption unit 35 are stacked in that order. The cylinder unit 33 has multiple cylinders 40. The cylinders 40 have the function of moving a cylinder rod connected to a pusher pin 41 up and down.

[0121] Pusher pins 41 are inserted into through holes 42 provided in electromagnet unit 34 and electrostatic adsorption unit 35. The tips of pusher pins 41 come into contact with substrate 60 by the operation of cylinder 40, allowing substrate 60 to be raised and lowered. Fig. 12A shows a state in which substrate 60 is placed on raised pusher pins 41.

[0122] 12B shows a configuration in which one pusher pin 41 is connected to one cylinder 40, but a configuration in which multiple pusher pins 41 are connected to one cylinder 40 is also possible. In addition, the number and positions of the pusher pins 41 may be determined appropriately so as not to interfere with the hand unit of the transport device.

[0123] The electromagnet unit 34 can generate a magnetic force when energized, and has the function of bringing a mask jig, which will be described later, into close contact with the substrate 60. The mask jig is preferably made of a ferromagnetic material such as stainless steel.

[0124] The electrostatic suction unit 35 has a function of applying a voltage to the substrate 60 from an internal electrode of the electrostatic suction unit 35, causing charges in the electrostatic suction unit 35 and the substrate 60 to attract each other, thereby causing adhesion. Therefore, unlike a vacuum suction mechanism, the electrostatic suction unit can suction and hold the substrate even in a vacuum. Furthermore, it is preferable that the electrostatic suction unit is made of dielectric ceramics or the like and does not contain a ferromagnetic material.

[0125] A rotation mechanism 36 such as a motor is connected to a first end face of the stage 50 and a second end face opposite the first end face, and is capable of vertically inverting the stage 50. Here, the combination of the stage 50 and the rotation mechanism 36 can be called a substrate inversion device.

[0126] 12C, the mask unit 32 is provided with an elevation mechanism 37 connected to a first end face and a second end face opposite to the first end face of the mask unit 32. The mask unit 32 has a mask jig and an alignment mechanism, and can align the mask jig with the substrate 60 and bring it into close contact with the substrate 60.

[0127] Next, a description will be given of the process from carrying a substrate into the film formation apparatus 30 to the film formation process with reference to Figures 13A to 14B. For clarity, chamber walls, gate valves, etc. are omitted from Figures 13A to 14B.

[0128] First, with the electrostatic adsorption unit 35 of the stage 50 facing upward, the substrate 60 placed on the hand part of the transport device 70 is moved onto the electrostatic adsorption unit 35. Then, the substrate 60 is raised by the pusher pins 41. Alternatively, the hand part of the transport device 70 is lowered to place the substrate 60 on the raised pusher pins 41 (see FIG. 13A).

[0129] Next, the pusher pins 41 are lowered, the substrate 60 is placed on the electrostatic adsorption unit 35, and the electrostatic adsorption unit 35 is operated to adsorb the substrate 60 (see FIG. 13B).

[0130] Next, the stage 50 is rotated by the rotation mechanism 36 to turn the substrate 60 over (see FIGS. 13C and 14A).

[0131] Next, the mask unit 32 is raised by the lifting mechanism 37, and the mask jig is aligned and brought into contact with the substrate 60. Then, the electromagnet unit 34 is energized, and the mask jig is brought into close contact with the substrate 60 (see FIG. 14B).

[0132] 14C shows the mask jig 39 of the mask unit 32. Circuits and the like are provided in advance on the surface of the substrate 60, and the substrate 60 and the mask jig 39 are brought into close contact with each other to prevent deposition in unnecessary areas. The mask unit 32 has an alignment mechanism including a camera 55, and can adjust the position (X, Y, and θ directions) between the portion of the substrate 60 where deposition is required and the opening of the mask jig 39.

[0133] After the film formation process is performed in the state shown in FIG. 14B, the substrate can be removed by performing the above operations in the reverse order.

[0134] The substrate reversing device only needs to be provided in a film formation apparatus that requires substrate reversal (a face-down type film formation apparatus). Therefore, there is no need to provide a substrate reversing mechanism in a substrate transfer apparatus or a load lock chamber, which can reduce the cost of the entire apparatus. This is particularly useful for a manufacturing apparatus that includes a mixture of face-down type apparatuses (film formation apparatuses) and face-up type apparatuses (film formation apparatuses, lithography apparatuses, etc.), such as the manufacturing apparatus of one embodiment of the present invention.

[0135] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0136] (Embodiment 2) In this embodiment, a specific example of a light-emitting element (organic EL element) manufactured using the manufacturing apparatus for a light-emitting device according to one embodiment of the present invention will be described.

[0137] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0138] In this specification, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification, a light-emitting device that can emit white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0139] Light-emitting devices can be broadly divided into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0140] A tandem-structured device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light, light from the light-emitting layers of the multiple light-emitting units may be combined to obtain white light. The configuration for obtaining white light is the same as that of the single-structured device. In a tandem-structured device, it is preferable to provide an intermediate layer such as a charge-generating layer between the multiple light-emitting units.

[0141] Furthermore, when comparing the above-mentioned white light-emitting device (single structure or tandem structure) with a light-emitting device with an SBS structure, the light-emitting device with an SBS structure can consume less power than the white light-emitting device. If you want to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device with an SBS structure, so it is preferable because it can reduce manufacturing costs or increase manufacturing yields.

[0142] Tandem-structure devices may also have a configuration (BB, GG, RR, etc.) in which light is emitted from multiple layers. A tandem structure, which allows light emission from multiple layers, requires a high voltage to emit light, but the current required to achieve the same emission intensity as a single structure is smaller. Therefore, a tandem structure can reduce the current stress per light-emitting unit and extend the device life.

[0143] <Configuration example> 15 shows a schematic top view of a display device 100 manufactured using a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The display device 100 includes a plurality of red light-emitting elements 110R, a plurality of green light-emitting elements 110G, and a plurality of blue light-emitting elements 110B. In FIG. 15, the light-emitting regions of the light-emitting elements are labeled with R, G, and B to easily distinguish the light-emitting elements from one another.

[0144] The light emitting elements 110R, 110G, and 110B are arranged in a matrix. Fig. 15 shows a so-called stripe arrangement in which light emitting elements of the same color are arranged in one direction. Note that the arrangement of the light emitting elements is not limited to this, and other arrangements such as a delta arrangement or a zigzag arrangement may also be used, or a pentile arrangement may also be used.

[0145] It is preferable to use EL elements such as OLEDs (organic light emitting diodes) or QLEDs (quantum-dot light emitting diodes) as the light emitting elements 110R, 110G, and 110B. Examples of light emitting materials that the EL elements have include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF materials).

[0146] FIG. 16A is a schematic cross-sectional view corresponding to the dashed dotted line A1-A2 in FIG.

[0147] 16A shows cross sections of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B. The light emitting element 110R, the light emitting element 110G, and the light emitting element 110B are each provided on a pixel circuit, and have a pixel electrode 111 and a common electrode 113.

[0148] The light-emitting element 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains a light-emitting organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting element 110B contains a light-emitting organic compound that emits light having a peak in at least the blue wavelength range. Note that the structure in which the EL layer 112R, EL layer 112G, and EL layer 112B each emit light of a different color may be referred to as an SBS (Side By Side) structure.

[0149] Each of the EL layers 112R, 112G, and 112B may have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer). Each of the EL layers 112R, 112G, and 112B may have a tandem structure having multiple light-emitting layers that emit light of the same color.

[0150] The pixel electrode 111 is provided for each light-emitting element. The common electrode 113 is provided as a continuous layer common to each light-emitting element. A conductive film that is transparent to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective to visible light is used for the other. By making the pixel electrode 111 transparent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making the pixel electrode 111 reflective and the common electrode 113 transparent, a top-emission display device can be obtained. Note that by making both the pixel electrode 111 and the common electrode 113 transparent, a dual-emission display device can also be obtained. In this embodiment, an example of manufacturing a top-emission display device will be described.

[0151] An insulating layer 131 is provided to cover the edge of the pixel electrode 111. The edge of the insulating layer 131 is preferably tapered.

[0152] The EL layer 112R, the EL layer 112G, and the EL layer 112B each have a region in contact with the upper surface of the pixel electrode 111 and a region in contact with the surface of the insulating layer 131. In addition, the ends of the EL layer 112R, the EL layer 112G, and the EL layer 112B are located on the insulating layer 131.

[0153] As shown in Figure 16A, a gap is provided between two EL layers between light-emitting elements of different colors. It is preferable that the EL layers are arranged so that they do not come into contact with each other. This makes it possible to preferably prevent current from flowing through two adjacent EL layers, which would otherwise cause unintended light emission. This makes it possible to improve contrast and realize a display device with high display quality.

[0154] Furthermore, a protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities from diffusing from above into each light emitting element. Alternatively, the protective layer 121 has a function of capturing (also called gettering) impurities (typically impurities such as water and hydrogen) that may enter each light emitting element.

[0155] The protective layer 121 may have, for example, a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used for the protective layer 121. Note that the protective layer 121 is preferably formed using the ALD apparatus described in Embodiment 1. When the protective layer 121 is formed using the ALD apparatus, for example, an aluminum oxide film is preferably used.

[0156] The pixel electrode 111 is electrically connected to one of the source and drain of the transistor 116. Here, the transistor 116 is a transistor that constitutes a pixel circuit. The transistor 116 can be, for example, a transistor having a metal oxide in a channel formation region (hereinafter referred to as an OS transistor). OS transistors have higher mobility and superior electrical characteristics than amorphous silicon transistors. Furthermore, the crystallization process required for the production of polycrystalline silicon is unnecessary, and the OS transistor can be formed with good uniformity through a film formation process or the like.

[0157] As a semiconductor material for an OS transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used.

[0158] Because of the large energy gap of the semiconductor layer, OS transistors exhibit extremely low off-state currents of a few yA / μm (current value per 1 μm of channel width). Furthermore, unlike transistors with silicon in the channel formation region (hereafter referred to as Si transistors), OS transistors have characteristics such as being free from impact ionization, avalanche breakdown, and short-channel effects, making them suitable for the formation of highly reliable circuits with high breakdown voltages. Furthermore, OS transistors are less susceptible to variations in electrical characteristics due to non-uniformity in crystallinity, which is a problem with Si transistors.

[0159] A semiconductor layer included in an OS transistor can be, for example, a film represented by an In-M-Zn-based oxide containing indium, zinc, and M (M is one or more metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can be typically formed by a sputtering method. Alternatively, it may be formed by an atomic layer deposition (ALD) method.

[0160] The atomic ratio of the metal elements in a sputtering target used to form an In-M-Zn-based oxide by sputtering preferably satisfies In≧M and Zn≧M. Preferred atomic ratios of the metal elements in such sputtering targets are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, etc. The atomic ratios of the semiconductor layer to be formed each have a variation of ±40% of the atomic ratio of the metal elements contained in the sputtering target.

[0161] The semiconductor layer is made of an oxide semiconductor with a low carrier density. For example, the semiconductor layer is made of an oxide semiconductor with a carrier density of 1×10 17 / cm 3 Less than 1 × 10 15 / cm3 or less, more preferably 1 × 10 13 / cm 3 Less than 1×10, more preferably 11 / cm 3 or less, more preferably 1 × 10 10 / cm 3 Less than 1 x 10 -9 / cm 3 An oxide semiconductor having a carrier density above or equal to this can be used. Such an oxide semiconductor is called a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. The oxide semiconductor has a low density of defect states and stable characteristics.

[0162] Note that the present invention is not limited to these, and an oxide semiconductor having an appropriate composition may be used depending on the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. In order to obtain the semiconductor characteristics of the transistor, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like of the semiconductor layer.

[0163] 16A illustrates a configuration in which the light-emitting layers of the R, G, and B light-emitting elements are different from one another, but the present invention is not limited to this. For example, as shown in FIG. 16B, a color system may be used in which an EL layer 112W that emits white light is provided, and colored layers 114R (red), 114G (green), and 114B (blue) are provided so as to overlap the EL layer 112W to form light-emitting elements 110R, 110G, and 110B.

[0164] The EL layer 112W may have a tandem structure in which EL layers that emit R, G, and B light are connected in series. Alternatively, a structure in which light-emitting layers that emit R, G, and B light may be connected in series may be used. The colored layers 114R, 114G, and 114B may be, for example, red, green, and blue color filters.

[0165] Alternatively, as shown in FIG. 16C, a pixel circuit may be formed on the substrate 60 using a Si transistor (transistor 117), and one of the source or drain of the transistor 117 and the pixel electrode 111 may be electrically connected.

[0166] The channel formation region of a Si transistor can be made of amorphous silicon, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. When a transistor is provided on an insulating surface such as a glass substrate, polycrystalline silicon is preferably used.

[0167] High-quality polycrystalline silicon can be easily obtained by using a laser crystallization process or the like, and can be used to form high-mobility transistors. High-quality polycrystalline silicon can also be obtained by a solid-phase growth method in which a metal catalyst such as nickel or palladium is added to amorphous silicon and heated. Polycrystalline silicon formed by a solid-phase growth method using a metal catalyst may be irradiated with a laser to further enhance its crystallinity. Since the metal catalyst remains in the polycrystalline silicon and deteriorates the electrical characteristics of the transistor, it is preferable to provide a region to which phosphorus or a noble gas is added outside the channel formation region and capture the metal catalyst in that region.

[0168] <Example of manufacturing method> An example of a method for manufacturing a light-emitting device that can be manufactured using a manufacturing apparatus according to one embodiment of the present invention will be described below, taking the light-emitting device included in the display device 100 shown in the above example configuration as an example.

[0169] 17A to 19E are schematic cross-sectional views illustrating steps in a method for fabricating a light-emitting device, as exemplified below. Note that the transistor 116, which is a component of the pixel circuit shown in FIG. 16A, is omitted in FIGS. 17A to 19E.

[0170] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, an atomic layer deposition (ALD) method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming a thin film by the above method.

[0171] Furthermore, methods such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating can be used to form thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices and to apply resins and the like used in lithography processes. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming thin films by the above-described methods. A manufacturing apparatus according to one embodiment of the present invention can also include an apparatus for applying resins by the above-described methods.

[0172] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed using a nanoimprint method. Furthermore, a method of directly forming island-shaped thin films by a film formation method using a masking mask may be used in combination.

[0173] There are two typical methods for processing thin films using photolithography. One is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask. The other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0174] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. Instead of light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0175] The thin film can be etched by dry etching, wet etching, etc. The manufacturing apparatus according to one embodiment of the present invention can include an apparatus for processing the thin film by the above-described method.

[0176] <Preparation of substrate 60> A substrate having heat resistance sufficient to withstand at least the subsequent heat treatment can be used as the substrate 60. When an insulating substrate is used as the substrate 60, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0177] In particular, it is preferable to use a substrate having a semiconductor circuit including semiconductor elements such as transistors formed on the semiconductor substrate or insulating substrate as the substrate 60. The semiconductor circuit preferably comprises, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0178] <Formation of pixel circuit and pixel electrode 111> Subsequently, a plurality of pixel circuits are formed on the substrate 60, and pixel electrodes 111 are formed on each of the pixel circuits. First, a conductive film to be the pixel electrode 111 is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. Thereafter, the pixel electrode 111 can be formed by removing the resist mask.

[0179] As the pixel electrode 111, it is preferable to apply a material (such as silver or aluminum) having a reflectance as high as possible in the entire wavelength range of visible light. The pixel electrode 111 formed of such a material can be referred to as an electrode having light reflectivity. Thereby, not only can the light extraction efficiency of the light-emitting element be increased, but also the color reproducibility can be enhanced.

[0180] <Formation of the insulating layer 131> Subsequently, an insulating layer 131 is formed to cover the ends of the pixel electrodes 111 (see FIG. 17A). As the insulating layer 131, an organic insulating film or an inorganic insulating film can be used. The insulating layer 131 preferably has a tapered shape at its ends in order to improve the step coverage of the subsequent EL film. In particular, when an organic insulating film is used, it is preferable to use a photosensitive material because the shape of the ends can be easily controlled according to the exposure and development conditions.

[0181] <Formation of the EL film 112Rf> Subsequently, an EL film 112Rf that will later become the EL layer 112R is formed on the pixel electrodes 111 and the insulating layer 131.

[0182] The EL film 112Rf has a film containing at least a red light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated. The EL film 112Rf can be formed, for example, by a vapor deposition method or a sputtering method. Note that the present invention is not limited thereto, and the above-described film formation methods can be appropriately used.

[0183] <Formation of the protective film 125Rf> Subsequently, a protective film 125Rf, which will later become the protective layer 125R, is formed on the EL film 112Rf (see FIG. 17B).

[0184] The protective layer 125R is a temporary protective layer used to prevent the deterioration and disappearance of the EL layer 112R in the manufacturing process of the organic EL element, and is also called a sacrificial layer. The protective film 125Rf preferably has a high barrier property against moisture and the like and is formed by a film-forming method that hardly damages the organic compound during film formation. Further, it is preferably formed of a material that can use an etchant that hardly damages the organic compound in the etching process. For example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, an inorganic insulating film, or an organic film can be used.

[0185] <Formation of the resist mask 143a> Subsequently, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting element 110R (see FIG. 17C). The resist mask 143a can be formed in a lithography process.

[0186] <Formation of the EL layer 112R and the protective layer 125R> Subsequently, using the resist mask 143a as a mask, the protective film 125Rf and the EL film 112Rf are etched to form the protective layer 125R and the EL layer 112R in an island shape (see FIG. 17D). A dry etching method or a wet etching method can be used in the etching process. Thereafter, the resist mask 143a is removed by ashing or a resist stripper.

[0187] <Formation of the EL film 112Gf> Subsequently, an EL film 112Gf, which will later become the EL layer 112G, is formed on the exposed pixel electrode 111, the insulating layer 131, and the protective layer 125R.

[0188] The EL film 112Gf has a film containing at least a green light-emitting organic compound. In addition, a configuration in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated may also be used.

[0189] <Formation of the protective film 125Gf> Subsequently, a protective film 125Gf, which will later become the protective layer 125G, is formed on the EL film 112Gf (see Fig. 18A). The protective film 125Gf can be formed of the same material as the protective film 125Rf.

[0190] <Formation of the resist mask 143b> Subsequently, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting element 110G (see Fig. 18B). The resist mask 143b can be formed in a lithography process.

[0191] <Formation of the EL layer 112G and the protective layer 125G> Subsequently, using the resist mask 143b as a mask, the protective layer 125G and the EL film 112Gf are etched to form the protective layer 125G and the EL layer 112G in an island shape (see Fig. 18C). A dry etching method or a wet etching method can be used in the etching process. Thereafter, the resist mask 143b is removed by ashing or with a resist stripper.

[0192] <Formation of the EL film 112Bf> Subsequently, an EL film 112Bf, which will later become the EL layer 112B, is formed on the exposed pixel electrode 111 and the insulating layer 131, as well as on the protective layers 125R and 125G.

[0193] The EL film 112Bf has a film containing at least a blue light-emitting organic compound. In addition, it may have a structure in which an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer are laminated.

[0194] <Formation of the protective film 125Bf> Subsequently, a protective film 125Bf, which will later become the protective layer 125B, is formed on the EL film 112Bf (see Fig. 18D). The protective film 125Bf can be formed of the same material as the protective film 125Rf.

[0195] <Formation of the resist mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting element 110B (see Fig. 19A). The resist mask 143c can be formed in a lithography process.

[0196] <Formation of EL layer 112B and protective layer 125B> Subsequently, using the resist mask 143c as a mask, the protective film 125Bf and the EL film 112Bf are etched to form the protective layer 125B and the EL layer 112G in an island shape (see Fig. 19B). A dry etching method or a wet etching method can be used in the etching process. Thereafter, the resist mask 143b is removed by ashing or a resist stripping solution (see Fig. 19C).

[0197] <Removal of protective layers 125R, 125G, and 125B> Subsequently, the protective layers 125R, 125G, and 125B are removed (see Fig. 19D). For the removal of the protective layer, it is preferable to use a wet etching method using an etchant suitable for the material of the protective layer.

[0198] <Formation of common electrode> Subsequently, a conductive layer that will become the common electrode 113 of the organic EL element is formed on the EL layer 112R, EL layer 112G, EL layer 112B, and the insulating layer 131 that were exposed in the previous step. As the common electrode 113, a thin metal film that transmits the light emitted from the light-emitting layer (for example, an alloy of silver and magnesium, etc.), a transparent conductive film (for example, indium tin oxide, or an oxide containing one or more of indium, gallium, zinc, etc.) can be used, either a single film or a laminated film of both. The common electrode 113 made of such a film can be called an electrode having light transmissivity. In the process of forming the conductive layer that will become the common electrode 113, a vapor deposition apparatus and / or a sputtering apparatus, etc. can be used.

[0199] Note that, for reliability improvement, before forming the common electrode 113, a layer having any one of the functions of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer may be provided as a common layer on the EL layer 112R, EL layer 112G, and EL layer 112B.

[0200] By providing a light-reflective electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission light-emitting element is formed.

[0201] <Protective layer formation> Subsequently, a protective layer 121 is formed on the common electrode 113 (see FIG. 19E). A sputtering device, a CVD device, an ALD device, or the like can be used in the step of forming the protective layer.

[0202] <Example of manufacturing equipment> 20 shows an example of a manufacturing apparatus that can be used for the manufacturing steps from the formation of the EL film 112Rf to the formation of the protective layer 121. The basic configuration of the manufacturing apparatus shown in FIG.

[0203] Clusters C1 to C14 will be described in detail below. Fig. 20 is a perspective view of the entire manufacturing equipment, omitting the illustration of utilities, gate valves, etc. For clarity, the interiors of transfer chambers TF1 to TF14 and load lock chambers B1 to B13 are shown as visible.

[0204] <Cluster C1> The cluster C1 has a load chamber LD and atmospheric pressure process devices A1 and A2. The atmospheric pressure process device A1 can be a cleaning device, and the atmospheric pressure process device A2 can be a baking device. In the cluster C1, a cleaning step is performed before the EL film 112Rf is formed.

[0205] <Cluster C2> Cluster C2 includes vacuum process equipment V1 to V4. The vacuum process equipment V1 to V4 are vapor deposition equipment for forming the EL film 112Rf and film formation equipment (e.g., vapor deposition equipment, ALD equipment, etc.) for forming the protective film 125Rf. For example, the vacuum process equipment V1 can be used as an equipment for forming an organic compound layer that will become the light-emitting layer (R). Furthermore, the vacuum process equipment V2 and V3 can be assigned as equipment for forming organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. Furthermore, the vacuum process equipment V4 can be assigned as an equipment for forming the protective film 125Rf.

[0206] <Cluster C3> Cluster C3 includes atmospheric pressure process equipment A3 to A7. The atmospheric pressure process equipment A3 to A7 can be equipment used in lithography processes. For example, atmospheric pressure process equipment A3 can be a resin (photoresist) coating equipment, atmospheric pressure process equipment A4 can be a pre-bake equipment, atmospheric pressure process equipment A5 can be an exposure equipment, atmospheric pressure process equipment A6 can be a development equipment, and atmospheric pressure process equipment A7 can be a post-bake equipment. Alternatively, atmospheric pressure process equipment A5 can be a nanoimprint equipment.

[0207] <Cluster C4> Cluster C4 includes vacuum process equipment V5 and V6. Vacuum process equipment V5 may be a dry etching equipment that forms the EL layer 112R. Vacuum process equipment V6 may be an ashing equipment that removes the resist mask.

[0208] <Cluster C5> The cluster C5 includes atmospheric pressure process equipment A8 and A9. The atmospheric pressure process equipment A8 can be a cleaning equipment, and the atmospheric pressure process equipment A9 can be a baking equipment. In the cluster C5, a cleaning step is performed before the EL film 112Gf is formed.

[0209] <Cluster C6> Cluster C6 includes vacuum process equipment V7 to V10. The vacuum process equipment V7 to V10 are evaporation equipment for forming the EL film 112Gf and film formation equipment (e.g., sputtering equipment) for forming the protective film 125Gf. For example, the vacuum process equipment V7 can be used as an equipment for forming an organic compound layer that will become the light-emitting layer (G). Furthermore, the vacuum process equipment V8 and V9 can be assigned as equipment for forming organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. Furthermore, the vacuum process equipment V10 can be assigned as an equipment for forming the protective film 125Gf.

[0210] <Cluster C7> Cluster C7 includes atmospheric pressure process equipment A10 to A14. The atmospheric pressure process equipment A10 to A14 may be equipment used for lithography processes. The equipment allocation may be the same as that for cluster C3.

[0211] <Cluster C8> Cluster C8 has vacuum process equipment V11 and V12. The vacuum process equipment V11 can be a dry etching equipment that forms the EL layer 112G. The vacuum process equipment V12 can be an ashing equipment that removes the resist mask.

[0212] <Cluster C9> The cluster C9 includes atmospheric pressure process equipment A15 and A16. The atmospheric pressure process equipment A15 can be a cleaning equipment, and the atmospheric pressure process equipment A16 can be a baking equipment. In the cluster C9, a cleaning step is performed before the EL film 112Bf is formed.

[0213] <Cluster C10> Cluster C10 includes vacuum process equipment V13 to V16. The vacuum process equipment V13 to V16 are evaporation equipment for forming the EL film 112Bf and film formation equipment (e.g., sputtering equipment) for forming the protective film 125Bf. For example, the vacuum process equipment V13 can be used as an equipment for forming an organic compound layer that will become the light-emitting layer (G). Furthermore, the vacuum process equipment V14 and V15 can be assigned as equipment for forming organic compound layers such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. Furthermore, the vacuum process equipment V16 can be assigned as an equipment for forming the protective film 125Bf.

[0214] <Cluster C11> The cluster C11 includes atmospheric pressure process equipment A17 to A21. The atmospheric pressure process equipment A17 to A21 may be equipment used for lithography processes. The equipment allocation may be the same as that for the cluster C3.

[0215] <Cluster C12> Cluster C12 has vacuum process equipment V17 and V18. Vacuum process equipment V17 can be a dry etching equipment that forms the EL layer 112B. Vacuum process equipment V18 can be an ashing equipment that removes the resist mask.

[0216] <Cluster C13> Cluster C13 includes atmospheric pressure process equipment A22 and A23. The atmospheric pressure process equipment A22 may be a wet etching equipment, and the atmospheric pressure process equipment A23 may be a baking equipment. Cluster C9 performs an etching process for the protective layers 125R, 125G, and 125B.

[0217] <Cluster C14> Cluster C14 includes vacuum process units V19 to V21 and an unload chamber ULD. The vacuum process unit V19 can be assigned to an apparatus (e.g., a vapor deposition apparatus) for forming any of the organic compound layers, such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. The vacuum process unit V20 can be a film formation apparatus (e.g., a sputtering apparatus) for forming the common electrode 113. The vacuum process unit V21 can be a film formation apparatus (e.g., a sputtering apparatus) for forming the protective layer 121. Alternatively, a separate vacuum process unit V may be provided, and a plurality of different film formation apparatuses (e.g., a vapor deposition apparatus, an ALD apparatus, etc.) may be provided to form the common electrode 113 and the protective layer 121 as stacked films.

[0218] The steps using the manufacturing equipment shown in Figure 20, the processing equipment, and the elements corresponding to the above-mentioned manufacturing method are summarized in Table 1. Note that the description of the loading and unloading of substrates into and out of the load lock chamber and each equipment is omitted.

[0219] [Table 1]

[0220] The manufacturing apparatus according to one embodiment of the present invention has the function of automatically carrying out steps No. 1 to No. 47 shown in Table 1.

[0221] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes. [Explanation of symbols]

[0222] A1: atmospheric pressure process equipment, A2: atmospheric pressure process equipment, A3: atmospheric pressure process equipment, A4: atmospheric pressure process equipment, A5: atmospheric pressure process equipment, A6: atmospheric pressure process equipment, A7: atmospheric pressure process equipment, A8: atmospheric pressure process equipment, A9: atmospheric pressure process equipment, A10: atmospheric pressure process equipment, A11: atmospheric pressure process equipment, A12: atmospheric pressure process equipment, A13: atmospheric pressure process equipment, A14: atmospheric pressure process equipment, A15: atmospheric pressure process equipment, A16: atmospheric pressure process equipment, A17: atmospheric pressure process equipment, A18: atmospheric pressure process equipment, A19: atmospheric pressure process equipment, A20: atmospheric pressure process apparatus, A21: atmospheric pressure process apparatus, A22: atmospheric pressure process apparatus, A23: atmospheric pressure process apparatus, B1: load lock chamber, B2: load lock chamber, B3: load lock chamber, B4: load lock chamber, B5: load lock chamber, B6: load lock chamber, B7: load lock chamber, B8: load lock chamber, B9: load lock chamber, B10: load lock chamber, B11: load lock chamber, B12: load lock chamber, B13: load lock chamber, C1: cluster, C2: cluster, C3: cluster, C4: cluster, C5: cluster, C6: cluster, C7: cluster, C8: cluster Raster, C9: Cluster, C10: Cluster, C11: Cluster, C12: Cluster, C13: Cluster, C14: Cluster, TF1: Transfer Room, TF2: Transfer Room, TF3: Transfer Room, TF4: Transfer Room, TF5: Transfer Room, TF6: Transfer Room, TF7: Transfer Room, TF8: Transfer Room, TF9: Transfer Room, TF10: Transfer Room, TF11: Transfer Room, TF12: Transfer Room, TF13: Transfer Room, TF14: Transfer Room, TF46: Transfer chamber, TF810: Transfer chamber, V1: Vacuum process device, V2: Vacuum process device, V3: Vacuum process device, V4: Vacuum process device, V5: Vacuum process device, V6: Vacuum process device, V7: Vacuum process device, V8: Vacuum process device, V9: Vacuum process device, V10: Vacuum process device, V11: Vacuum process device, V12: Vacuum process device, V13: Vacuum process device, V14: Vacuum process device, V15: Vacuum process device, V16: Vacuum process device, V17: Vacuum process device, V18: Vacuum process device,V19: vacuum process device, V20: vacuum process device, V21: vacuum process device, 30: film formation device, 31: film formation material supply unit, 32: mask unit, 33: cylinder unit, 34: electromagnet unit, 35: electrostatic adsorption unit, 36: rotation mechanism, 37: lifting mechanism, 39: mask jig, 40: cylinder, 41: pusher pin, 42: through hole, 50: stage, 55: camera, 60: substrate, 60a : substrate, 60b: substrate, 70: conveying device, 70a: conveying device, 70b: conveying device, 70c: conveying device, 70d: conveying device, 70e: conveying device, 70f: conveying device, 70g: conveying device, 70h: conveying device, 70i: conveying device, 70j: conveying device, 70k: conveying device, 70m: conveying device, 70n: conveying device, 70p: conveying device, 80a: stage, 80b: stage, 80c: stage, 80d: stage, 8 0e: stage, 80f: stage, 80g: stage, 80h: stage, 80i: stage, 80j: stage, 80k: stage, 80m: stage, 80n: stage, 100: display device, 110B: light emitting element, 110G: light emitting element, 110R: light emitting element, 111: pixel electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 112R: EL layer, 112Rf: E EL film, 112W: EL layer, 113: common electrode, 114B: colored layer, 114G: colored layer, 114R: colored layer, 116: transistor, 117: transistor, 121: protective layer, 125B: protective layer, 125Bf: protective film, 125G: protective layer, 125Gf: protective film, 125R: protective layer, 125Rf: protective film, 131: insulating layer, 143a: resist mask, 143b: resist mask, 143c: resist mask,

Claims

[Claim 1] The system includes first to eleventh clusters and first to tenth load lock chambers, the first cluster is connected to the second cluster via the first load lock chamber; the second cluster is connected to the third cluster via the second load lock chamber; the third cluster is connected to the fourth cluster via the third load lock chamber; the fourth cluster is connected to the fifth cluster via the fourth load lock chamber; the fifth cluster is connected to the sixth cluster via the fifth load lock chamber; the sixth cluster is connected to the seventh cluster via the sixth load lock chamber; the seventh cluster is connected to the eighth cluster via the seventh load lock chamber; the eighth cluster is connected to the ninth cluster via the eighth load lock chamber; the ninth cluster is connected to the tenth cluster via the ninth load lock chamber; the tenth cluster is connected to the eleventh cluster via the tenth load lock chamber; the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster are controlled to a reduced pressure; the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster are controlled to be in an inert gas atmosphere; each of the first cluster to the eleventh cluster includes a transport device; the first cluster, the fourth cluster, the seventh cluster, and the eleventh cluster each have a face-up type film forming apparatus and a face-down type film forming apparatus; the third cluster, the sixth cluster, and the ninth cluster each have an etching device; the second cluster, the fifth cluster, and the eighth cluster each have a plurality of devices for performing a lithography process; the tenth cluster includes an etching device; The face-down type film forming apparatus is a light-emitting device manufacturing apparatus having a substrate reversing device.

Images