Semiconductor inspection probe device

Abstract

To provide a semiconductor inspection probe device capable of enhancing miniaturization and positional accuracy.SOLUTION: The semiconductor inspection probe device includes a probe unit substrate in which the probe to be brought into contact with a wiring pad part of the substrate to be inspected is provided so as to protrude from one surface, a holding part for holding the probe unit substrate, and a position adjustment part for changing a relative position of the probe unit substrate with respect to the substrate to be inspected.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor inspection probe device that enables electrical measurement and inspection of chips formed in a multiplicity of chip formation regions on a semiconductor wafer before they are separated and cut. [Background technology]

[0002] A known inspection system for performing electrical measurements and inspections of electronic devices is one in which multiple probe boards (probe cards) are arranged to face the surface of a semiconductor wafer (see, for example, Patent Document 1). In the technology disclosed in Patent Document 1, the positions of the multiple probe boards are controlled by multiple cam members provided near the outer periphery of each probe board. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2008-544283 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the inspection system disclosed in Patent Document 1 has the problem of complex control due to the use of multiple cam members to move and adjust the probe card. Furthermore, this inspection system cannot measure the area of ​​the semiconductor wafer facing the area where the cam members are provided, which means it is unable to measure the entire surface of the semiconductor wafer at once. In particular, the technology disclosed in Patent Document 1 has the problem of low miniaturization and positional accuracy.

[0005] The present invention has been made in view of the above-mentioned problems, and has as its object to provide a lobe device that can be made finer and with improved positional accuracy. [Means for solving the problem]

[0006] In order to solve the above-mentioned problems and achieve the object, an aspect of the present invention is a semiconductor inspection probe device that is equipped with probes and measures and inspects the electrical characteristics of a substrate to be inspected, and is characterized by comprising: a probe unit substrate on one side of which the probes that come into contact with wiring pad portions of the substrate to be inspected are provided so as to protrude; a holding section that holds the probe unit substrate; and a position adjustment section that changes the relative position of the probe unit substrate with respect to the substrate to be inspected.

[0007] In the above aspect, it is preferable that the probe unit substrate has lead-out terminals connected to the probes on one or the other surface thereof.

[0008] In the above aspect, it is preferable that the position adjustment unit is a screw mechanism that moves the probe unit substrate in at least one of the X direction, Y direction, and Z direction.

[0009] In the above aspect, it is preferable that the position adjustment section includes a pressing slide jig that moves the probe unit substrate in at least one of the X direction, the Y direction, and the Z direction.

[0010] In the above aspect, it is preferable that the position adjustment section includes a piezoelectric actuator that moves the probe unit substrate in at least one of an X direction, a Y direction, and a Z direction.

[0011] In the above aspect, it is preferable that the holding portion holds the plurality of probe unit substrates provided adjacent to each other so that they can move relative to each other.

[0012] In the above aspect, it is preferable that the holding portion is a plate-like body having a size that allows it to face the entire surface of the substrate to be inspected.

[0013] In the above aspect, the holding portion is preferably made of a stretchable resin sheet.

[0014] In the above aspect, it is preferable that the holding portion has a circular shape having an outline larger than at least the outline of the substrate to be inspected.

[0015] In the above aspect, it is preferable that the holding portion has a rectangular shape with an outline larger than an outline of the substrate to be inspected.

[0016] In the above aspect, it is preferable that the probe unit substrate and the holding portion have an integral structure. [Effects of the Invention]

[0017] According to the present invention, there is an effect of realizing a lobe device that can be made finer and with improved positional accuracy. [Brief explanation of the drawings]

[0018] [Figure 1] FIG. 1 is a cross-sectional explanatory view of a semiconductor inspection probe device according to a first embodiment of the present invention. [Figure 2] FIG. 2 is an explanatory plan view of the semiconductor inspection probe device according to the first embodiment of the present invention. [Figure 3] FIG. 3 is a partially cutaway perspective view of the semiconductor inspection probe device according to the first embodiment of the present invention. [Figure 4] FIG. 4 is a cross-sectional explanatory view showing a state in which electrical measurement and inspection of a silicon wafer having a step portion on its surface is being performed by the semiconductor inspection probe device according to the first embodiment of the present invention. [Figure 5] FIG. 5 is a schematic plan view of a semiconductor inspection probe device according to a second embodiment of the present invention. [Figure 6] FIG. 6 is a cross-sectional explanatory view of a semiconductor inspection probe device according to a third embodiment of the present invention. [Figure 7] FIG. 7 is a schematic bottom view of a semiconductor inspection probe device according to the fourth embodiment of the present invention. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9]FIG. 9 is a schematic plan view of a semiconductor inspection probe device according to a fifth embodiment of the present invention. [Figure 10] FIG. 10 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 11 is a schematic plan view of a semiconductor inspection probe device according to a sixth embodiment of the present invention. [Figure 12] FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. [Figure 13] FIG. 13 is a schematic bottom view of a semiconductor inspection probe device according to the seventh embodiment of the present invention. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 15 is an explanatory cross-sectional view showing a modified example of the semiconductor inspection probe device according to the first embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0019] The details of a semiconductor inspection probe device according to an embodiment of the present invention will be described below with reference to the drawings. However, it should be noted that the drawings are schematic and the number of components, dimensions, dimensional ratios, shapes, etc. of each component may differ from the actual components. Furthermore, the drawings may contain parts with different dimensional relationships, ratios, and shapes.

[0020] As shown in FIG. 1, in this embodiment, a semiconductor wafer such as a silicon wafer 100 is used as the substrate to be inspected. In the silicon wafer 100, devices are fabricated in each of a large number of chip formation regions 101. During the manufacturing process, the semiconductor inspection probe device according to this embodiment enables electrical measurement and inspection of each chip before separation and cutting. In addition, the substrate to be inspected can also be a variety of substrates, such as package substrates, printed wiring boards, flexible boards, multilayer wiring boards, electrode plates for liquid crystal displays and organic EL displays, and film carriers.

[0021] [First embodiment] 1 is a cross-sectional explanatory view of a semiconductor inspection probe device 1 according to a first embodiment of the present invention. The semiconductor inspection probe device 1 includes a plurality of probe unit substrates 2, a holding section 3, and a plurality of position adjustment sections 4.

[0022] In this embodiment, the probe unit substrate 2 is arranged so as to correspond to a chip formation region 101 in which devices are fabricated on a silicon wafer 100 having a diameter of, for example, 300 mm. Note that one probe unit substrate 2 may be set to correspond to a plurality of chip formation regions 101 so that electrical measurement and inspection of these plurality of chip formation regions 101 can be performed simultaneously.

[0023] A plurality of probes 5 are provided to protrude from one surface (lower surface) of the probe unit substrate 2, which is to be brought into contact with wiring pad portions (not shown) of the silicon wafer 100. In this embodiment, for ease of explanation, nine probe unit substrates 2 are provided corresponding to nine regions obtained by dividing the silicon wafer 100, but a configuration may also be provided in which the number of probe unit substrates 2 corresponds to several hundred to several thousand regions.

[0024] As shown in FIGS. 1 and 4, the probe unit substrate 2 includes a glass substrate 6, a polyimide film 7 laminated on one surface (lower surface) of the glass substrate 6, a wiring portion 8 formed on one surface of the polyimide film 7, the probe 5 connected to the wiring portion, a pad portion 9 formed on the other surface of the glass substrate 6 as a lead terminal, a through-hole portion 10 penetrating the glass substrate 6 and the polyimide film 7 between the wiring portion 8 and the pad portion 9 to connect the wiring portion 8 and the pad portion 9, a conductive anisotropic elastic layer 12 including conductive plastic balls 11 arranged on the pad portion 9, an interposer 13 provided thereon, a circuit board 14 arranged on the interposer 13, and electrical wiring 15 connected to the circuit board 14. The conductive plastic balls 11 are elastic and deform and return to their original shape in response to pressure, thereby preventing pressure from concentrating on the probe 5. One end of a through-hole portion 13A formed in the interposer 13 is configured to be connected to the conductive plastic ball 11.

[0025] The holder 3 is a plate-like body having a rectangular outline larger than the outline of the silicon wafer 100 so that it can face the entire surface of the silicon wafer 100. The holder 3 holds the probe unit substrate 2 so that it can move in the X, Y, and Z directions. The position of the probe unit substrate 2 relative to the holder 3 can be changed by driving the position adjustment unit 4. In this embodiment, the holder 3 is formed in a rectangular shape, but it may also be formed in a circular shape with an outline equal to or larger than that of the silicon wafer 100.

[0026] The position adjustment unit 4 includes a screw mechanism, a slide jig, a driving means such as a piezo actuator (not shown) that moves the probe unit substrate 2 in any of the X, Y, and Z directions. In this embodiment, the position adjustment unit 4 is set so that the probe unit substrate 2 can move by about several tens of μm in the X, Y, and Z directions.

[0027] As shown in FIG. 3, each probe 5 is provided on an independent wiring section (wiring pad section) 8. The polyimide film 7 has cushioning properties, flexibility, and the like. A seed layer 8A made of, for example, nickel or a nickel alloy and having a thickness of, for example, about 0.2 μm is formed on the surface (lower surface) of the polyimide film 7. Methods for forming this seed layer 8A include sputtering, vapor deposition, and electroless plating. In addition, although the polyimide film 7 is used in this embodiment, other materials such as polyamide, polyester, polyethylene, polyvinyl alcohol, polypropylene, polycarbonate, and polystyrene can also be used.

[0028] A wiring pattern 8B is formed on the surface of the seed layer 8A. The wiring pattern 8B and the probes 5 are made of a nickel-cobalt (Ni-Co) alloy. The thickness of the wiring pattern 8B is set to about 5 μm. The wiring pattern 8B is formed by the first electroforming. The probes 5 are formed by the second electroforming, and the protrusion dimension is set to about 10 to 15 μm. In this embodiment, the probes 5 are manufactured using photolithography and plating techniques.

[0029] The electrical wiring 15 connected to each probe unit substrate 2 is connected to an inspection and measurement device (not shown) so as not to be interfered with by the holding section 3 and the position adjustment section 4.

[0030] The following describes the operation and effects of the semiconductor inspection probe device 1 according to this embodiment. The semiconductor inspection probe device 1 according to this embodiment is capable of electrically measuring and inspecting all chip formation areas 101 while facing the silicon wafer 100. That is, while the semiconductor inspection probe device 1 is facing the silicon wafer 100, the positioning of each probe unit substrate 2 can be controlled by the position adjustment unit 4. Therefore, the semiconductor inspection probe device 1 according to this embodiment has the effects of shortening the inspection time, improving production efficiency, and reducing costs. Furthermore, the semiconductor inspection probe device 1 according to this embodiment makes it possible to inspect fine-pitch chip formation areas 101.

[0031] As described above, the semiconductor inspection probe device 1 according to this embodiment can perform electrical measurements and inspections before cutting the silicon wafer 100 along the dicing streets to separate the chip formation areas 101, thereby improving the yield of chip component manufacturing.

[0032] In the semiconductor inspection probe device 1 according to this embodiment, the position adjustment section 4 can accurately align each probe unit substrate 2, which has the effect of making it adaptable to environmental changes such as temperature changes.

[0033] In this embodiment, the probe 5 is manufactured using photolithography and plating techniques, so that a highly reliable and durable semiconductor inspection probe device 1 can be realized without using a mechanical structure such as a cantilever.

[0034] In the semiconductor inspection probe device 1 according to this embodiment, the probes 5 are mounted on the conductive plastic balls 11 and polyimide film 7 as bases, thereby suppressing stress concentration on the probes 5 and preventing pressure unevenness. As shown in FIG. 4 , even if the surface of the silicon wafer 100 has wiring portions 102 and steps 103, causing individual chip formation regions 101 to have different heights, each probe unit substrate 2 can be pressed with a uniform pressure Pz. In this case, stress concentration from the probes 5 on each chip formation region 101 can be prevented. Therefore, this embodiment can prevent damage to the chip formation region 101 and the probes 5 themselves. Note that FIG. 4 does not show the holding unit 3 and the position adjustment unit 4. Note that, although the probe unit substrates 2 are independent of each other in this embodiment, the polyimide films 7 may be connected to each other, i.e., multiple probe unit substrates 7 may be connected by a single polyimide film, as in the modified example shown in FIG. 15 .

[0035] [Second embodiment] 5 is a schematic plan view showing a semiconductor inspection probe device 20 according to a second embodiment of the present invention. The semiconductor inspection probe device 20 includes nine probe unit substrates 21 to 29, a holding section (not shown), and a plurality of position adjustment sections 31 to 42. The configuration of the semiconductor inspection probe device 20 according to this embodiment is the same as that of the semiconductor inspection probe device 1 according to the first embodiment, except for the configurations of the holding section and the position adjustment sections 31 to 42. The semiconductor inspection probe device 20 according to this embodiment includes a Z-direction position adjustment section (not shown) that adjusts the positions of the probe unit substrates 21 to 29 in the Z direction.

[0036] In the semiconductor inspection probe device 20 of this embodiment, similarly to the first embodiment, nine probe unit substrates 21 to 29 are arranged in three rows and three columns. That is, the first column is made up of probe unit substrates 21, 22, and 23, the second column is made up of probe unit substrates 24, 25, and 26, and the third column is made up of probe unit substrates 27, 28, and 29.

[0037] In this embodiment, the probe unit substrate 25 disposed in the center is aligned with the silicon wafer 100 at the center of the silicon wafer 100 (the center of the stage). Furthermore, the probe unit substrate 21 at one end of the first row is provided with a position adjustment unit 31 that adjusts movement in the X direction and a position adjustment unit 37 that adjusts movement in the Y direction. Similarly, the probe unit substrate 23 at the other end of the first row is provided with a position adjustment unit 32 that adjusts movement in the X direction and a position adjustment unit 41 that adjusts movement in the Y direction.

[0038] Probe unit substrate 27 at one end of the third row is provided with position adjustment unit 35 for adjusting movement in the X direction and position adjustment unit 38 for adjusting movement in the Y direction. Similarly, probe unit substrate 29 at the other end of the third row is provided with position adjustment unit 36 ​​for adjusting movement in the X direction and position adjustment unit 42 for adjusting movement in the Y direction.

[0039] The probe unit substrate 24 at one end of the second row has the same position in the Y direction as the central probe unit substrate 25, so it only needs to be adjusted by the position adjustment unit 33, which adjusts its position in the X direction. Similarly, the other probe unit substrate 26 in the second row has the same position in the Y direction as the central probe unit substrate 25, so it only needs to be adjusted by the position adjustment unit 36, which adjusts its position in the X direction.

[0040] The central probe unit substrate 22 in the first row has the same position in the X direction as the central probe unit substrate 25, so it only needs to be adjusted by the position adjustment unit 39 that adjusts its position in the Y direction. The central probe unit substrate 28 in the third row has the same position in the X direction as the central probe unit substrate 25, so it only needs to be adjusted by the position adjustment unit 40 that adjusts its position in the Y direction. By providing the position adjustment units 31 to 42 in this arrangement, it is possible to optimally adjust the positions of the divided probe unit substrates 21 to 29, and it is possible to minimize misalignment of the probes 5 over the entire surface.

[0041] [Third embodiment] A semiconductor inspection probe device 50 according to a third embodiment of the present invention will be described with reference to Fig. 6. The semiconductor inspection probe device 50 includes a plurality of probe unit substrates 51, a holding section (not shown), and a plurality of position adjustment sections (not shown).

[0042] In this embodiment, the probe unit substrate 51 is arranged to correspond to a chip formation region in which devices are fabricated on the silicon wafer 100. Note that one probe unit substrate 51 may be configured to correspond to a plurality of chip formation regions so that electrical measurement and inspection of these plurality of chip formation regions can be performed simultaneously.

[0043] A plurality of probes 5 are provided to protrude from one surface (lower surface) of the probe unit substrate 51. As shown in Fig. 6, the probe unit substrate 51 includes a glass substrate 6, a polyimide film 7 laminated on one surface (lower surface) of the glass substrate 6, a wiring portion 8 formed on one surface of the polyimide film 7, probes 5 connected to the wiring portion 8, a pad portion 52A formed on the other surface of the glass substrate 6, through-hole portions 10 that penetrate the glass substrate 6 and the polyimide film 7 between the wiring portion 8 and the pad portion 52A and connect the wiring portion 8 to the pad portion 52A, a ball receiving layer 52 including conductive plastic balls 54 arranged on the pad portion 52A, and a circuit board 55 provided thereon.

[0044] The conductive plastic balls 54 are elastic and deform and return to their original shape in response to pressure, preventing pressure concentration on the probes 5. Circuit-side wiring portions 56 formed on the circuit board 55 are configured to connect to the conductive plastic balls 54. In this embodiment, one end of a through-hole serving as the circuit-side wiring portion 56 is configured to contact the conductive plastic balls 54. The ball-receiving layer 52 is also formed with a ball-receiving recess 53 exposing the pad portion 52A. The pad portion 52A exposed by the ball-receiving recess 53 is configured to be large enough to allow the conductive plastic balls 54 to be moved and adjusted in the X and Y directions. A position adjustment unit (not shown) moves and adjusts each probe unit substrate 51 in the X and Y directions. This movement allows the probe unit substrate 51 to be moved and adjusted while maintaining electrical continuity with the circuit board 55.

[0045] The position adjustment unit (not shown) may be a screw mechanism, a slide jig, a piezoelectric actuator, or other driving means (not shown) that moves the probe unit substrate 51 in the X and Y directions.

[0046] [Fourth embodiment] 7 and 8, a semiconductor inspection probe device 60 according to a fourth embodiment of the present invention will be described. The semiconductor inspection probe device 60 includes a plurality of probe unit substrates 61, a resin sheet 62 as a holding unit, a sheet support unit 63, a frame 64, and a position adjustment unit 65.

[0047] 8, a plurality of probes 5 to be brought into contact with wiring pads (not shown) of a silicon wafer (not shown) are provided so as to protrude from one surface (lower surface) of the probe unit substrate 61. The number of probe unit substrates 61 may be set to several hundred to several thousand depending on the diameter of the silicon wafer.

[0048] In this embodiment, the peripheral edge of a circular, stretchable resin sheet 62 is evenly supported by a sheet support portion 63. The sheet support portion 63 is configured so that its diameter increases when pulled radially outward. The sheet support portion 63 is disposed inside an annular frame 64. The frame 64 is provided with position adjustment portions 65 evenly spaced along the circumferential direction. The position adjustment portions 65 have threaded portions 65A that are threadedly coupled to the frame 64, and the tips of the threaded portions 65A are rotatably supported by the sheet support portion 63. Therefore, by rotating and adjusting the threaded portions 65A of the position adjustment portions 65, the sheet support portion 63 is deformed, and the resin sheet 62 can expand and contract accordingly. This operation enables the position of the probe unit substrate 61 to be adjusted. Note that in this embodiment, the probe unit substrate 61 and the resin sheet 62 may be the same (one piece).

[0049] [Fifth embodiment] 9 and 10, a semiconductor inspection probe device 70 according to a fifth embodiment of the present invention will be described. The semiconductor inspection probe device 70 includes a plurality of probe unit substrates 71, a resin sheet 72 as a holding portion, a plurality of connecting plates 73 whose inner ends are connected at equal intervals along the periphery of the resin sheet 72, an annular frame 74 arranged to surround the resin sheet 72 and to which the outer ends of the plurality of connecting plates 73 are connected, and a plurality of position adjustment portions 75 corresponding to each of the connecting plates 73.

[0050] In this embodiment, the peripheral edge of a circular, flexible resin sheet 72 is evenly supported by a connecting plate 73. This connecting plate 73 is made of a flexible resin material or the like so that it can follow the movement of a position adjustment unit 75. As shown in FIG. 10 , the position adjustment unit 75 is provided so as to be movable up and down in the Z direction using a screw mechanism. As the position adjustment unit 75 moves up and down, the connecting plate 73 moves in the X direction (the radial direction outward from the resin sheet 72). Accordingly, the resin sheet 72 expands and contracts in the planar direction, thereby adjusting the position of the probes 5 on the probe unit substrate 71. Furthermore, the semiconductor inspection probe device 70 moves up and down by pressing the probes 5 against the silicon wafer 100 using a Z-direction position adjustment unit (not shown). Other configurations of this embodiment are the same as those of the fourth embodiment.

[0051] [Sixth embodiment] A semiconductor inspection probe device 70A according to a sixth embodiment of the present invention will be described with reference to Figures 11 and 12. The semiconductor inspection probe device 70A has a configuration substantially similar to that of the semiconductor inspection probe device 70 according to the fifth embodiment, except that an annular position adjustment unit 76 is used.

[0052] According to this embodiment, by moving the single position adjustment part 76 up and down in the Z direction, the expansion and contraction state of the resin sheet 72 is changed, and the position of the probe 5 on the probe unit substrate 71 is adjusted relative to the silicon wafer 100. Therefore, according to this embodiment, the operation can be simplified and the cost of the device can be reduced.

[0053] [Seventh embodiment] 13 and 14 illustrate a semiconductor inspection probe device 70B according to a seventh embodiment of the present invention. The semiconductor inspection probe device 70B has substantially the same configuration as the semiconductor inspection probe device 70A according to the sixth embodiment, except that an annular position adjustment unit 76 is disposed below the connecting plate 73.

[0054] In this embodiment as well, the position adjustment unit 76 is raised and lowered to adjust the expansion and contraction state of the resin sheet 72, thereby adjusting the position of the probe 5. In this embodiment, raising the position adjustment unit 76 causes the resin sheet 72 to change in the contracting direction, which is the opposite operation to that of the semiconductor inspection probe device 70A according to the sixth embodiment.

[0055] [Other embodiments] Although the embodiments of the present invention have been described above, the descriptions and drawings that form part of the disclosure of the embodiments should not be understood to limit the present invention. From this disclosure, various alternative embodiments, examples, and operating techniques will become apparent to those skilled in the art.

[0056] For example, in the above embodiments, a screw mechanism, a slide jig, and a piezoelectric actuator are given as examples of position adjustment units, but these are not limited to these, and it is also possible to use a linear motor, a rotary motor, a magnetic drive, etc. [Explanation of symbols]

[0057] 1. Semiconductor inspection probe equipment 2 Probe unit board 3 Holding part 4 Position adjustment part 5 Probe 6. Glass substrate 7 Polyimide film 8 Wiring section 8A seed layer 8B wiring pattern 9 Pad section 10 Through-hole section 11 Conductive plastic ball 12 Conductive anisotropic elastic layer 13 Interposer 13A through hole part 14 Circuit Board 15 Electrical wiring 20 Semiconductor inspection probe equipment 21~29 Probe unit board 31~42 Position adjustment part 50 Semiconductor inspection probe equipment 51 Probe unit board 52 Ball receiving layer 52A Pad section 53 Ball receiving recess 54 Conductive plastic balls 55 Circuit Board 56 Circuit side wiring section 60 Semiconductor inspection probe equipment 61 Probe unit board 62 Resin sheet 63 Seat support 64 Frame 65 Position adjustment section 65A threaded part 70, 70A, 70B Semiconductor inspection probe device 71 Probe unit board 72 Resin sheet 73 Connecting plate 74 Frame 75 Position adjustment section 76 Position adjustment section 100 silicon wafers 101 Chip formation area 102 Wiring section 103 Step

Claims

1. A semiconductor inspection probe device that is equipped with a probe and measures and inspects electrical characteristics of a substrate to be inspected, a probe unit substrate on one surface of which the probes to be brought into contact with the wiring pads of the substrate to be inspected are provided so as to protrude; a holding part that holds the probe unit substrate; a position adjusting unit that changes the relative position of the probe unit substrate with respect to the substrate to be inspected; A semiconductor inspection probe device comprising:

2. A lead terminal connected to the probe is provided on the one surface or the other surface of the probe unit substrate.

2. The semiconductor inspection probe device according to claim 1.

3. the position adjustment unit is a screw mechanism that moves the probe unit substrate in at least one of an X direction, a Y direction, and a Z direction; 2. The semiconductor inspection probe device according to claim 1.

4. the position adjustment unit includes a pressing slide jig that moves the probe unit substrate in the X direction, the Y direction, and the Z direction; 2. The semiconductor inspection probe device according to claim 1.

5. the position adjustment unit includes a piezoelectric actuator that moves the probe unit substrate in an X direction, a Y direction, and a Z direction; 2. The semiconductor inspection probe device according to claim 1.

6. the holding section holds the plurality of probe unit substrates arranged adjacent to each other so as to be relatively movable; 2. The semiconductor inspection probe device according to claim 1.

7. the holding portion is a plate-like body having a size capable of facing the entire surface of the substrate to be inspected; 2. The semiconductor inspection probe device according to claim 1.

8. The holding portion is made of an elastic resin sheet.

2. The semiconductor inspection probe device according to claim 1.

9. the holding portion is circular and has an outline larger than the outline of the substrate to be inspected; 2. The semiconductor inspection probe device according to claim 1.

10. the holding portion is rectangular and has an outline larger than an outline of the substrate to be inspected; 2. The semiconductor inspection probe device according to claim 1.

11. The probe unit substrate and the holding portion are integrally formed.

2. The semiconductor inspection probe device according to claim 1.

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