Single wafer processing environment with spatial separation

Abstract

To provide a support assembly and a processing chamber in which a wafer is quickly moved between processing stations while spending a minimum amount of time and a moving distance to the outside of one of the stations.SOLUTION: The processing chamber 100 has a support assembly 200 with a plurality of process stations 110 disposed in a circular configuration about a rotational axis 211 and having a rotatable central base 210 defining the rotational axis, at least two support arms 220 extending from the central base, and a heater 230 on each of the support arms disposed adjacent the process stations, wherein the heaters move between the various process stations to perform one or more process conditions.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001]

[0001] The present disclosure relates generally to an apparatus for depositing thin films. In particular, the present disclosure relates to an apparatus having a plurality of movable heated wafer supports and spatially separated processing stations. [Background technology]

[0002] Current atomic layer deposition (ALD) processes have several potential challenges and difficulties. Many ALD chemicals (e.g., precursors and reactants) are “incompatible,” meaning the chemicals cannot be mixed together. Mixing incompatible chemicals can result in a chemical vapor deposition (CVD) process instead of an ALD process. CVD processes generally have less thickness control than ALD processes and / or can result in the generation of gas-phase particles that can cause defects in the resulting device. Conventional time-domain ALD processes, in which a single reactant gas is flowed into the processing chamber at a time, result in long purge / pump-out times to prevent the chemicals from mixing in the gas phase. Spatial ALD chambers can move one or more wafers from one environment to a second environment faster than a time-domain ALD chamber can pump / purge, resulting in higher throughput.

[0003]

[0003] The semiconductor industry needs high-quality films that can be deposited at lower temperatures (e.g., below 350 degrees Celsius). Alternative energy sources are needed to deposit high-quality films at temperatures lower than those at which films can be deposited by thermal-only processes. Plasma solutions can be used to provide additional energy in the form of ions and radicals to ALD films. Obtaining sufficient energy for vertical sidewall ALD films is a challenge. Typically, ions are accelerated through a sheath above the wafer surface in a direction perpendicular to the wafer surface. Thus, while the ions provide energy to the horizontal ALD film surfaces, they deliver an insufficient amount of energy to the vertical surfaces because they are traveling parallel to the vertical surfaces.

[0004] Some processing chambers incorporate a capacitively coupled plasma (CCP). The CCP is generated between an upper electrode and the wafer, commonly known as a CCP parallel-plate plasma. CCP parallel-plate plasma generates very high ion energies across two sheaths and therefore performs very poorly on vertical sidewall surfaces. Better vertical ALD film properties can be achieved by spatially moving the wafer into an environment optimized to generate high radical and ion fluxes with lower energy and wider angular distributions relative to the wafer surface. Such plasma sources include microwave, inductively coupled plasma (ICP), or higher frequency CCP solutions with a third electrode (i.e., the plasma is generated between two electrodes above the wafer, without using the wafer as the first electrode).

[0005] Current spatial ALD processing chambers rotate multiple wafers on a heated circular platen at a constant speed, moving the wafers from one processing environment to an adjacent environment. The various processing environments create incompatible gas separations. However, current spatial ALD processing chambers cannot optimize the plasma environment for plasma exposure, resulting in challenges of non-uniformity, plasma damage, and / or processing flexibility.

[0006] For example, process gas flows across a wafer surface. Because the wafer rotates around an offset axis, the leading and trailing edges of the wafer have different flow streamlines. Furthermore, there are flow differences between the inner and outer diameter edges of the wafer, caused by a slower velocity at the inner edge and a faster velocity at the outer edge. These flow non-uniformities can be optimized but cannot be eliminated. Plasma damage can be created when exposing a wafer to a non-uniform plasma. The constant rotation speed of these spatial processing chambers requires the wafer to move in and out of the plasma, so some areas of the wafer are exposed to the plasma while other areas are outside the plasma. Furthermore, because of the constant rotation speed, it can be difficult to vary the exposure time in the spatial processing chamber. As an example, a process uses a 0.5-second exposure to Gas A followed by a 1.5-second plasma treatment. Because the tool runs at a constant rotation speed, the only way to do this is to make the plasma environment more than three times larger than the Gas A dosage environment. If another process is performed in which the Gas A and plasma times are equal, modifications to the hardware would be required. Current spatial ALD chambers can only slow or speed up the rotation speed and cannot adjust the time difference between steps for smaller or larger areas without modifying the chamber hardware. Therefore, there is a need in the art for improved deposition apparatus and methods. Summary of the Invention

[0007] One or more embodiments of the present disclosure are directed to a support assembly including a rotatable central base, at least two support arms, and a heater. The rotatable central base defines an axis of rotation. Each of the support arms extends from the central base and has an inner end in contact with the central base and an outer end. A heater having a support surface is disposed on the outer end of each of the support arms.

[0008]

[0008] A further embodiment of the present disclosure is directed to a processing chamber including a housing, a plurality of processing stations, and a support assembly. The housing has walls, a bottom, and a top defining an interior space. The plurality of processing stations are within the interior space of the housing. The processing stations are arranged in a circular configuration around an axis of rotation. Each of the processing stations includes a gas injector having a front surface. The front surfaces of the gas injectors are substantially coplanar. The support assembly is disposed within the interior space of the housing below the processing stations. The support assembly includes a rotatable central base from which extend a plurality of support arms. Each support arm has an inner end in contact with the central base and an outer end. A heater having a support surface is disposed on the outer end of each of the support arms.

[0009]

[0009] So that the features of the present disclosure described above can be understood in detail, a more particular description of the present disclosure briefly summarized above will be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1] 1 illustrates a cross-sectional isometric view of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 2]

[0011] 1 shows a cross-sectional view of a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 3]

[0012] FIG. 1 illustrates a bottom orthographic view of a support assembly according to one or more embodiments of the present disclosure. [Figure 4]

[0013] 1 illustrates a top orthographic view of a support assembly according to one or more embodiments of the present disclosure. [Figure 5]

[0014] 1 illustrates a top orthographic view of a support assembly according to one or more embodiments of the present disclosure. [Figure 6]

[0015] 1 shows a cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure. [Figure 7]

[0016] 1 shows a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure. [Figure 8]

[0017] 1 shows a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure. [Figure 9]

[0018] 1 shows a partial cross-sectional side view of a support assembly according to one or more embodiments of the present disclosure. [Figure 10]

[0019] FIG. 10A is a top isometric view of a support plate according to one or more embodiments of the present disclosure.

[0020] FIG. 10B is a cross-sectional side view of the support plate of FIG. 10A taken along line 10B-10B'. [Figure 11]

[0021] FIG. 11A is a bottom isometric view of a support plate according to one or more embodiments of the present disclosure.

[0022] FIG. 11B is a cross-sectional side view of the support plate of FIG. 11A taken along line 11B-11B'. [Figure 12]

[0023] FIG. 12A is a bottom isometric view of a support plate according to one or more embodiments of the present disclosure.

[0024] FIG. 12B is a cross-sectional side view of the support plate of FIG. 12A taken along line 12B-12B'. [Figure 13]

[0025] FIG. 1 is a cross-sectional isometric view of a top plate for a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 14]

[0026] FIG. 2 is an exploded cross-sectional view of a processing station according to one or more embodiments of the present disclosure. [Figure 15]

[0027] 1 is a schematic cross-sectional side view of a top plate for a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 16]

[0028] 1 is a partial cross-sectional side view of a processing station within a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 17]

[0029] 1 is a schematic representation of a processing platform in accordance with one or more embodiments of the present disclosure. [Figure 18]

[0030] 18A-18I show schematic diagrams of processing station configurations within a processing chamber in accordance with one or more embodiments of the present disclosure. [Figure 19]

[0031] 19A and 19B show a schematic representation of a process according to one or more embodiments of the present disclosure. [Figure 20]

[0032] 1 shows a cross-sectional schematic representation of a support assembly according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0011]

[0033] Before certain exemplary embodiments of the present disclosure are described, it should be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The present disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0012]

[0034] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which a film processing operation is performed during a manufacturing process. For example, substrate surfaces on which processing may be performed include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. Substrates may be subjected to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, and / or bake the substrate surface. In addition to film processing directly on the surface of the substrate itself, the present disclosure contemplates that any of the disclosed film processing steps may be performed on an underlying layer formed on the substrate, as disclosed in more detail below. The term "substrate surface" is intended to include such underlying layers, as the context indicates. Thus, for example, when a film / layer or partial film / layer is deposited on a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0013]

[0035] As used herein and in the appended claims, the terms "precursor," "reactant," "reactant gas," and the like are used interchangeably to refer to any gas species capable of reacting with the substrate surface or a film formed on the substrate surface.

[0014]

[0036] One or more embodiments of the present disclosure utilize spatial separation between two or more processing environments. Some embodiments advantageously provide apparatus and methods for maintaining separation of incompatible gases. Some embodiments advantageously provide apparatus and methods including optimizable plasma processing. Some embodiments advantageously provide apparatus and methods that enable differentiated thermal administration environments, differentiated plasma processing environments, and other environments.

[0015]

[0037] One or more embodiments of the present disclosure are directed to a processing chamber having four spatially separated processing environments, also referred to as processing stations. Some environments have more than four processing environments, while other environments have fewer than four processing environments. The processing environments may be mounted coplanar with the wafer(s) moving in a horizontal plane. The process environments are arranged in a circular configuration. A rotatable structure having one to four (or more) individual wafer heaters mounted thereon moves the wafer in a circular path having a similar diameter to the process environments. Each heater may be temperature controlled and may have one or more concentric zones. For wafer loading, the rotatable structure may be lowered so that a vacuum robot can lift the finished wafer and place an unprocessed wafer on lift pins located above each wafer heater (in a lower Z position). In operation, each wafer can be in an independent environment until the process is complete, and then the rotatable structure can rotate and move the wafer on the heater to the next environment for processing (90 degrees for four stations, 120 degrees for three stations).

[0016]

[0038] Certain embodiments of the present disclosure advantageously provide spatial separation for ALD with incompatible gases. Certain embodiments enable higher throughput and tool resource utilization than traditional time-domain or spatial processing chambers. Each process environment can operate at a different pressure. Because the heater rotation has Z-direction motion, each heater can be sealed within the chamber.

[0017]

[0039] Certain embodiments advantageously provide a plasma environment, which may include one or more of microwave, ICP, parallel plate CCP, or three-electrode CCP, where the entire wafer may be immersed in the plasma, eliminating plasma damage from non-uniform plasma across the wafer.

[0018]

[0040] In some embodiments, a small gap between the showerhead and wafer can be used to improve dosing gas utilization and cycle time speed. Precise showerhead temperature control and high operating range (up to 230 degrees Celsius). Without being bound by theory, it is believed that wafer temperature uniformity improves when the showerhead temperature is closer to the wafer temperature.

[0019]

[0041] The showerhead may include small gas holes (<200 μm), a large number of gas holes (from thousands to more than 10 million), and a recursively fed gas distribution inside the showerhead using a small distribution volume to increase velocity. The small size and large number of gas holes may be created by laser drilling or dry etching. When a wafer is near the showerhead, turbulence is experienced from gas traveling toward the wafer through the vertical holes. Some embodiments use many holes placed close together to allow for slowing the velocity of gas through the showerhead and achieving uniform distribution over the wafer surface.

[0020]

[0042] Some embodiments are directed to an integrated processing platform that uses multiple spatially separated processing stations (chambers) on a single tool. The processing platform may have various chambers capable of performing various processes.

[0021]

[0043] Certain embodiments of the present disclosure are directed to apparatus and methods for moving wafer(s) attached to wafer heater(s) from one environment to another. Rapid movement may be enabled by electrostatically chucking (or clamping) the wafer(s) to the heater(s). Wafer movement may be in a linear or circular motion.

[0022]

[0044] Certain embodiments of the present disclosure are directed to methods for processing one or more substrates. Examples include, but are not limited to, stepping one wafer on one heater through multiple distinct, spatially separated, sequential environments; stepping two wafers on two wafer heaters through three environments (two environments are the same with one distinct environment between the two similar environments); wafer 1 undergoing environment A and then B and repeating this while wafer 2 undergoes B and then A and repeating this; one environment remaining idle (no wafer); stepping two wafers through two first environments and two second environments, both experiencing the same environment simultaneously (i.e., both wafers are in A, then both go to B); four wafers in two A and two B environments; and two wafers being processed in A while the other two wafers are processed in B. In some embodiments, wafers are repeatedly exposed to environment A and environment B, and then to a third environment located in the same chamber.

[0023]

[0045] In some embodiments, the wafer passes through multiple chambers for processing, where at least one of the chambers performs sequential processing with multiple spatially separated environments within the same chamber.

[0024]

[0046] One embodiment is directed to an apparatus in which spatially separated processing environments are in the same chamber, where the environments are at significantly different pressures (e.g., one <100 mT and the other >3 T). In one embodiment, a heater rotation robot moves in the z-axis to seal each wafer / heater in its spatially separated environment.

[0025]

[0047] One embodiment includes a structure constructed above the chamber that has a vertical structural member that exerts a force upward against the center of the chamber lid to cancel out distortion caused by atmospheric pressure above and reduced pressure on the other side. The magnitude of the force on the upper structure may be mechanically adjusted based on the distortion of the top plate. Force adjustment may be performed automatically using a feedback circuit and force transducer, or manually using, for example, a screw that can be turned by an operator.

[0026]

[0048] 1 and 2 illustrate a processing chamber 100 in accordance with one or more embodiments of the present disclosure. FIG. 1 illustrates a processing chamber 100 depicted in a cross-sectional isometric view in accordance with one or more embodiments of the present disclosure. FIG. 2 illustrates a processing chamber 100 in cross-section in accordance with one or more embodiments of the present disclosure. Accordingly, certain embodiments of the present disclosure are directed to a processing chamber 100 incorporating a support assembly 200 and a top plate 300.

[0027]

[0049] The processing chamber 100 includes a housing 102 having walls 104 and a bottom 106. The housing 102 together with a top plate 300 define an interior space 109, also referred to as the processing space.

[0028]

[0050] The processing chamber 100 includes multiple processing stations 110. The processing stations 110 are positioned within the interior space 109 of the housing 102 and arranged in a circular configuration around the axis of rotation 211 of the support assembly 200. The processing stations 110 are spatially arranged around the interior space 109 of the processing chamber 100. Each processing station 110 includes a gas injector 112 having a front surface 114. In some embodiments, the front surfaces 114 of the gas injectors 112 are substantially coplanar. The processing stations 110 are defined as areas within which processing can occur. For example, the processing stations 110 may be defined by a support surface 231 of a heater 230 and the front surface 114 of the gas injector 112, as described below.

[0029]

[0051] The processing station 110 may be configured to perform any suitable process and provide any suitable processing conditions. The type of gas injector 112 used will depend, for example, on the type of process being performed and the type of showerhead or gas injector. For example, a processing station 110 configured to operate as an atomic layer deposition system may have a showerhead or vortex gas injector. On the other hand, a processing station 110 configured to operate as a plasma station may have one or more electrodes and / or a grounded plate arrangement that generates a plasma while allowing plasma gas to flow toward the wafer. The embodiment shown in FIG. 2 has a different type of processing station 110 on the left side of the drawing (processing station 110a) than on the right side of the drawing (processing station 110b). Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel-plate CCP, UV exposure, laser processing, pumping chambers, annealing stations, and metrology stations.

[0030]

[0052] 3-6 illustrate a support assembly 200 in accordance with one or more embodiments of the present disclosure. The support assembly 200 includes a rotatable central base 210. The rotatable central base 210 may have a symmetrical or asymmetrical shape and defines a rotation axis 211. As can be seen in FIG. 6, the rotation axis 211 extends in a first direction. The first direction may be referred to as the vertical direction or along the z-axis, although it may be understood that use of the term "vertical" in this manner is not limited to a direction perpendicular to the gravitational force.

[0031]

[0053] The support assembly 200 includes at least two support arms 220 coupled to and extending from a central base 210. The support arms 220 have an inner end 221 and an outer end 222. The inner end 221 contacts the central base 210 so that when the central base 210 rotates about the rotation axis 211, the support arms 220 similarly rotate. The support arms 220 may be coupled to the central base 210 at the inner end 221 by a fastener (e.g., a bolt) or by being integrally formed with the central base 210.

[0032]

[0054] In some embodiments, the support arms 220 extend perpendicular to the axis of rotation 211, such that one of the inner end 221 and the outer end 222 is further from the axis of rotation 211 than the other of the inner end 221 and the outer end 222 of the same support arm 220. In some embodiments, the inner end 221 of the support arm 220 is closer to the axis of rotation 211 than the outer end 222 of the same support arm 220.

[0033]

[0055] The number of support arms 220 in the support assembly 200 can vary. In some embodiments, there are at least two support arms 220, at least three support arms 220, at least four support arms 220, or at least five support arms 220. In some embodiments, there are three support arms 220. In some embodiments, there are four support arms 220. In some embodiments, there are five support arms 220. In some embodiments, there are six support arms 220.

[0034]

[0056] The support arms 220 may be symmetrically arranged about the central base 210. For example, in a support assembly 200 having four support arms 220, each of the support arms 220 is spaced 90 degrees apart about the central base 210. In a support assembly 200 having three support arms 220, the support arms 220 are spaced 120 degrees apart about the central base 210. Stated differently, in an embodiment having four support arms 220, the support arms are arranged to provide four-fold symmetry about the axis of rotation 211. In some embodiments, the support assembly 200 has n support arms 220, and the n support arms 220 are arranged to provide n-fold symmetry about the axis of rotation 211.

[0035]

[0057] The heater 230 is located at the outer end 222 of the support arm 220. In one embodiment, each support arm 220 has a heater 230. The center of the heater 230 is positioned a fixed distance from the axis of rotation 211 so that when the central base 210 rotates, the heater 230 moves in a circular path.

[0036]

[0058] The heater 230 has a support surface 231 capable of supporting a wafer. In one embodiment, the support surfaces 231 of the heaters 230 are substantially coplanar. As used in this manner, "substantially coplanar" means that the plane formed by each support surface 231 is within ±5 degrees, ±4 degrees, ±3 degrees, ±2 degrees, or ±1 degree of the plane formed by the other support surfaces 231.

[0037]

[0059] In one embodiment, the heater 230 is disposed directly on the outer end 222 of the support arm 220. In one embodiment, as shown in the drawings, the heater 230 is elevated above the outer end 222 of the support arm 220 by heater standoffs 234. The heater standoffs 234 may be of any size and length to increase the height of the heater 230.

[0038]

[0060] In some embodiments, channels 236 are formed in one or more of the central base 210, the support arms 220, and / or the heater standoffs 234. The channels 236 may be used to route electrical connections or to provide gas flow.

[0039]

[0061] The heater may be any suitable type of heater known to those skilled in the art. In one embodiment, the heater is a resistive heater having one or more heating elements within a heater body.

[0040]

[0062] In some embodiments, the heater 230 includes additional components. For example, the heater may comprise an electrostatic chuck. The electrostatic chuck may include various electrical leads and electrodes, such that a wafer disposed on the heater's support surface 231 can be held in place while the heater is moved. This allows the wafer to be chucked onto the heater early in the process and maintained in the same position on the same heater while the heater is moved to a different process region. In some embodiments, the electrical leads and electrodes are routed through channels 236 in the support arm 220. FIG. 7 shows an enlarged view of a portion of the support assembly 200, showing the channels 236 therein. The channels 236 extend along the support arm 220 and the heater standoff 234. The first electrode 251 a and the second electrode 251 b are electrically connected to the heater 230 or to components (e.g., resistive leads) inside the heater 230. The first conducting wire 253a is connected to the first electrode 251a at the first connector 252a, and the second conducting wire 253b is connected to the second electrode 251b at the second connector 252b.

[0041]

[0063] In some embodiments, a temperature measurement device (e.g., a pyrometer, thermistor, thermocouple) is disposed within channel 236 to measure one or more of the temperature of heater 230 or the temperature of a substrate on heater 230. In some embodiments, control and / or measurement leads for the temperature measurement device are routed through channel 236. In some embodiments, one or more temperature measurement devices are disposed within process chamber 100 to measure the temperature of heater 230 and / or a wafer on heater 230. Suitable temperature measurement devices are known to those skilled in the art and include, but are not limited to, optical pyrometers and contact thermocouples.

[0042]

[0064] Electrical leads may be routed through the support arm 220 and the support assembly 200 to connect to a power source (not shown). In some embodiments, the connection to the power source allows for continuous rotation of the support assembly 200 without the conductors 253a, 253b becoming tangled or broken. As shown in FIG. 7 , in some embodiments, the first and second conductors 253a, 253b extend along the channel 236 of the support arm 220 to the central base 210. Within the central base 210, the first conductor 253a connects to a central first connector 254a, and the second conductor 253b connects to a central second connector 254b. The central connectors 254a, 254b may be part of a connection plate 258 so that power or electrical signals can pass through the central connectors 254a, 254b. In the illustrated embodiment, the support assembly 200 can continuously rotate without the conductors becoming tangled or broken. This is because the conductors terminate within the central base 210. The second connection is on the opposite side of the connection plate 258 (outside the processing chamber).

[0043]

[0065] In some embodiments, the electrical leads are directly connected to a power source or electrical component outside the processing chamber through channel 236. In such embodiments, the leads have sufficient slack to allow the support assembly 200 to rotate a limited amount without tangling or breaking the leads. In some embodiments, the support assembly 200 rotates no more than about 1080 degrees, 990 degrees, 720 degrees, 630 degrees, 360 degrees, or 270 degrees before the direction of rotation is reversed. This allows the heater to rotate through each of the stations without breaking the leads.

[0044]

[0066] 3-6, the heater 230 and the support surface 231 may include one or more gas outlets for providing a flow of backside gas, which may aid in removing the wafer from the support surface 231. As shown in FIGS. 4 and 5, the support surface 231 includes a plurality of openings 237 and gas channels 238. The openings 237 and / or the gas channels 238 may be in fluid communication with one or more of a vacuum source or a gas source (e.g., purge gas). In such embodiments, hollow tubes may be included to allow fluid communication of the gas source with the openings 237 and / or the gas channels 238.

[0045]

[0067] In some embodiments, heater 230 and / or support surface 231 are configured as an electrostatic chuck. In such embodiments, electrodes 251a, 251b (see FIG. 7) may include control lines for the electrostatic chuck.

[0046]

[0068] Some embodiments of the support assembly 200 include a sealing platform 240. The sealing platform has a top surface 241, a bottom surface, and a thickness. The sealing platform 240 may be positioned around the heater 230 to help provide a seal or barrier to minimize gas flow into the area below the support assembly 200.

[0047]

[0069] 4, the sealing platform 240 is annular and disposed around each heater 230. In the illustrated embodiment, the sealing platform 240 is positioned below the heater 230 such that the upper surface 241 of the sealing platform 240 is below the support surface 231 of the heater.

[0048]

[0070] The sealing platform 240 may have several purposes. For example, the sealing platform 240 may be used to increase the temperature uniformity of the heater 230 by increasing its thermal mass. In some embodiments, the sealing platform 240 is integrally formed with the heater 230 (see, for example, FIG. 6 ). In some embodiments, the sealing platform 240 is separate from the heater 230. For example, the embodiment shown in FIG. 8 has the sealing platform 240 as a separate component coupled to the heater standoffs 234, such that the upper surface 241 of the sealing platform 240 is below the height of the support surface 231 of the heater 230.

[0049]

[0071] In some embodiments, the sealing platform 240 acts as a holder for the support plate 245. As shown in FIG. 5 , in some embodiments, the support plate 245 is a single component that completely surrounds the heater 230, with multiple openings 242 to allow access to the support surface 231 of the heater 230. The openings 242 may allow the heater 230 to pass through the support plate 245. In some embodiments, the support plate 245 is fixed so that it moves vertically and rotates with the heater 230.

[0050]

[0072] In one or more embodiments, the support assembly 200 is a drum-shaped component, i.e., a cylindrically-shaped body having an upper surface 246 configured to support multiple wafers, as shown, for example, in FIG. 20 . The upper surface 246 of the support assembly 200 has a plurality of recesses (pockets 257) sized to support one or more wafers during processing. In some embodiments, the pockets 257 have a depth approximately equal to the thickness of the wafer being processed, thereby causing the upper surface of the wafer to be substantially flush with the upper surface 246 of the cylindrically-shaped body. One example of such a support assembly 200 may be envisioned as an enlarged view of FIG. 5 without the support arms 220. FIG. 20 shows a cross-sectional view of one embodiment of the support assembly 200 using a cylindrically-shaped body. The support assembly 200 includes a plurality of pockets 257 sized to support wafers for processing. In the illustrated embodiment, the bottoms of the pockets 257 are the support surface 231 of the heater 230. Power connections for the heater 230 may be routed through the support posts 227 and the support plate 245. The heaters 230 can be individually powered to control the temperature of the individual pockets 257 and wafers.

[0051]

[0073] 9 , in one embodiment, support plate 245 has a top surface 246 that forms a major surface 248 that is substantially parallel to a major surface 247 formed by support surface 231 of heater 230. In one embodiment, support plate 245 has a top surface 246 that forms major surface 248 that is a distance D above major surface 247 of support surface 231. In one embodiment, distance D is substantially equal to the thickness of wafer 260 being processed. As a result, surface 261 of wafer 260 is coplanar with top surface 246 of support plate 245, as shown in FIG. 6 . As used in this manner, the term “substantially coplanar” means that the major surface formed by surface 261 of wafer 260 is coplanar within ±1 mm, ±0.5 mm, ±0.4 mm, ±0.3 mm, ±0.2 mm, or ±0.1 mm.

[0052]

[0074] 9, an embodiment of the present disclosure has separate components that create a support surface for processing. Here, the sealing platform 240 is a separate component from the heater 230 and is positioned such that the upper surface 241 of the sealing platform 240 is below the support surface 231 of the heater 230. The distance between the upper surface 241 of the sealing platform 240 and the support surface 231 of the heater 230 is sufficient to allow the support plate 245 to be positioned on the sealing platform 240. The thickness of the support plate 245 and / or the position of the sealing platform 240 may be controlled such that the distance D between the upper surfaces 246 of the support plates 245 is sufficient so that the upper surface 261 of the wafer 260 (see FIG. 6) is substantially flush with the upper surface 246 of the support plate 245.

[0053]

[0075] 9, the support plate 245 is supported by support posts 227. The support posts 227 can be useful in preventing sagging of the center of the support plate 245 when a single-component platform is used. In some embodiments, the sealing platform 240 is not present and the support posts 227 are the primary support for the support plate 245.

[0054]

[0076] The support plate 245 may have various configurations for interacting with various configurations of the heater 230 and the sealing platform 240. FIG. 10A shows a top isometric view of the support plate 245 in accordance with one or more embodiments of the present disclosure. FIG. 10B shows a cross-sectional view of the support plate 245 of FIG. 10A taken along line 10B-10B'. In this embodiment, the support plate 245 is a planar component in which the top surface 246 and the bottom surface 249 are substantially flat and / or coplanar. The illustrated embodiment may be particularly useful when a sealing platform 240 is used to support the support plate 245, as shown in FIG. 9.

[0055]

[0077] 11A shows a bottom isometric view of another embodiment of a support plate 245 according to one or more embodiments of the present disclosure. FIG. 11B shows a cross-sectional view of the support plate 245 of FIG. 11A taken along line 11B-11B'. In this embodiment, each of the openings 242 has a protruding ring 270 around the outer periphery of the opening 242 on the bottom surface 249 of the support plate 245.

[0056]

[0078] FIG. 12A shows a bottom isometric view of another embodiment of a support plate 245 in accordance with one or more embodiments of the present disclosure. FIG. 12B shows a cross-sectional view of the support plate 245 of FIG. 12A taken along line 12B-12B'. In this embodiment, each of the openings 242 has a recessed ring 272 around the outer periphery of the opening 242 in the bottom surface 249 of the support plate 245. The recessed ring 272 forms a recessed bottom surface 273. This type of embodiment may be useful when the sealing platform 240 is either absent or flush with the support surface 231 of the heater 230. The recessed bottom surface 273 may be disposed on the support surface 231 of the heater 230, such that the bottom portion of the support plate 245 extends around the sides of the heater 230 and below the support surface 231 of the heater 230.

[0057]

[0079] Certain embodiments of the present disclosure are directed to a top plate 300 for a multi-station processing chamber. With reference to Figures 1 and 13, the top plate 300 has a top surface 301 and a bottom surface 302 that define a lid thickness, and one or more edges 303. The top plate 300 includes at least one opening 310 extending through its thickness. The opening 310 is sized to allow for the addition of gas injectors 112, which may form processing stations 110.

[0058]

[0080] 14 shows an exploded view of a processing station 110 in accordance with one or more embodiments of the present disclosure. The illustrated processing station 110 includes three main components: a top plate 300 (also called a lid), a pump / purge insert 330, and a gas injector 112. The gas injector 112 shown in FIG. 14 is a showerhead-type gas injector. In some embodiments, the insert is coupled to or in fluid communication with a vacuum (exhaust). In some embodiments, the insert is coupled to or in fluid communication with a purge gas source.

[0059]

[0081] The openings 310 in the top plate 300 may be uniformly sized or may have various sizes. Variously sized / shaped gas injectors 112 may be used with pump / purge inserts 330 appropriately shaped to transition from the openings 310 to the gas injectors 112. For example, as shown, the pump / purge insert 330 includes a top 331 having a sidewall 335 and a bottom 333. When inserted into the opening 310 in the top plate 300, a ledge 334 adjacent the bottom 333 may rest on a shelf 315 formed in the opening 310. In some embodiments, there is no shelf 315 in the opening, and a flange portion 337 of the pump / purge insert 330 rests on the top plate 300. In the illustrated embodiment, the ledge 334 rests on the shelf 315 with an O-ring 314 placed therebetween to help form an airtight seal.

[0060]

[0082] In one embodiment, one or more purge rings 309 (see FIG. 13) are present in the top plate 300. The purge rings 309 may be in fluid communication with a purge gas plenum (not shown) or purge gas source (not shown) to provide a positive flow of purge gas to prevent leakage of process gases from the processing chamber.

[0061]

[0083] The pump / purge insert 330 of one embodiment includes a gas plenum 336 having at least one opening 338 in the bottom 333 of the pump / purge insert 330. The gas plenum 336 has an inlet (not shown), typically near the top 331 or sidewall 335 of the pump / purge insert 330.

[0062]

[0084] In some embodiments, the plenum 336 may be supplemented with a purge gas or inert gas that may pass through openings 338 in the bottom 333 of the pump / purge insert 330. The gas flow through openings 338 may help create a gas curtain-type barrier to prevent leakage of process gases from the interior of the processing chamber.

[0063]

[0085] In some embodiments, the plenum 336 is coupled to or in fluid communication with a vacuum source. In such embodiments, gas flows into the plenum 336 through openings 338 in the bottom 333 of the pump / purge insert 330. The gas may be exhausted from the plenum to the exhaust. Such a configuration may be used to exhaust gases from the processing station 110 during use.

[0064]

[0086] Pump / purge insert 330 includes an opening 339 through which gas injector 112 can be inserted. The illustrated gas injector 112 has a flange 342 that can contact a ledge 332 adjacent to the top 331 of pump / purge insert 330. The diameter or width of gas injector 112 can be any suitable size that can fit within opening 339 of pump / purge insert 330. This allows different types of gas injectors 112 to be used within the same opening 310 in top plate 300.

[0065]

[0087] 2 and 15 , one embodiment of the top plate 300 includes a bar 360 that spans a central portion of the top plate 300. The bar 360 may be connected to the top plate 300 near the center using a connector 367. The connector 367 can be used to apply a force perpendicular to the top 331 or bottom 333 of the top plate 300 to compensate for bending of the top plate 300 as a result of a pressure differential or due to the weight of the top plate 300. In one embodiment, the bar 360 and connector 367 can compensate for a distortion of about 1.5 mm or less in the center of a top plate 300 having a width of about 1.5 mm and a thickness of about 100 mm or less. In one embodiment, a motor 365 or actuator can be connected to the connector 367 to vary the directional force applied to the top plate 300. The motor 365 or actuator may be supported on the bar 360. The bar 360 is shown contacting the edge of the top plate 300 in two locations. However, one skilled in the art will recognize that there may be one linkage position or more than two linkage positions.

[0066]

[0088] 2, the support assembly 200 includes at least one motor 250. The at least one motor 250 is coupled to the central base 210 and configured to rotate the support assembly 200 about the axis of rotation 211. In some embodiments, the at least one motor is configured to move the central base 210 in a direction along the axis of rotation 211. For example, in FIG. 2, a motor 255 is coupled to the motor 250 and can move the support assembly 200 along the axis of rotation 211. In other words, the illustrated motor 255 can move the support assembly 200 along the z-axis, vertically, or perpendicular to the movement provided by the motor 250. In some embodiments, as shown, there is a first motor 250 for rotating the support assembly 200 about the axis of rotation 211 and a second motor 255 for moving the support assembly 200 along the axis of rotation 211 (i.e., along the z-axis or vertically).

[0067]

[0089] 2 and 16, one or more vacuum and / or purge gas flows may be used to help isolate one processing station 110a from an adjacent processing station 110b. A purge gas plenum 370 may be in fluid communication with a purge gas port 371 at the outer boundary of the processing station 110. In the embodiment shown in FIG. 16, the purge gas plenum 370 and purge gas port 371 are positioned in the top plate 300. A plenum 336, shown as part of the pump / purge insert 330, is in fluid communication with an opening 338 that acts as a pump / purge gas port. As shown in FIG. 13, the purge gas port 371 and purge gas plenum 370 and the vacuum port (opening 338) may extend around the periphery of the processing station 110 to create a gas curtain. The gas curtain may help minimize or eliminate leakage of process gases into the interior space 109 of the processing chamber.

[0068]

[0090] In the embodiment shown in FIG. 16 , differential exhaust may be used to help isolate the processing station 110. The pump / purge insert 330, along with O-rings 329, is shown in contact with the heater 230 and the support plate 245. The O-rings 329 are positioned on either side of an opening 338 in fluid communication with a plenum 336. One O-ring 329 is positioned inside the periphery of the opening 338, and the other O-ring 329 is positioned outside the periphery of the opening 338. The combination of the O-rings 329 and the pump / purge plenum 336 with the opening 338 can provide a sufficient differential pressure to maintain an airtight seal of the processing station 110 from the interior volume 109 of the processing chamber 100. In some embodiments, one O-ring 329 is positioned either inside or outside the periphery of the opening 338. In one embodiment, there are two O-rings 329, one located inside and one located outside the periphery of the purge gas port 371 in fluid communication with the plenum 370. In one embodiment, there is one O-ring 329 located either inside or outside the periphery of the purge gas port 371 in fluid communication with the plenum 370.

[0069]

[0091] The boundary of the processing station 110 may be considered the area within which the process gas is isolated by the pump / purge insert 330. In one embodiment, as shown in Figures 14 and 16, the outer boundary of the processing station 110 is the outermost edge 381 of the opening 338 that fluidly communicates with the plenum 336 of the pump / purge insert 330.

[0070]

[0092] The number of processing stations 110 can vary depending on the number of heaters 230 and support arms 220. In some embodiments, there are an equal number of heaters 230, support arms 220, and processing stations 110. In some embodiments, the heaters 230, support arms 220, and processing stations 110 are configured such that each of the support surfaces 231 of the heaters 230 may be positioned adjacent to the front surface 114 of a different processing station 110 at the same time. In other words, each of the heaters is located within one processing station at a time.

[0071]

[0093] The spacing of the processing stations 110 around the processing chamber 100 may vary. In one embodiment, the processing stations 110 are close enough together to minimize the spacing between the stations, allowing a substrate to be moved quickly between the processing stations 110 while spending a minimal amount of time and travel distance outside of one of the stations. In one embodiment, the processing stations 110 are positioned close enough together so that a wafer transferred onto the support surface 231 of the heater 230 is always within range of one of the processing stations 110.

[0072]

[0094] 17 illustrates a processing platform 400 according to one or more embodiments of the present disclosure. The embodiment illustrated in FIG. 17 merely represents one possible configuration and should not be considered limiting of the scope of the present disclosure. For example, in some embodiments, the processing platform 400 may have a different number of processing chambers 100, buffer stations 420, and / or robot 430 configurations than the illustrated embodiment.

[0073]

[0095] The exemplary processing platform 400 includes a central transfer station 410 having multiple sides 411, 412, 413, and 414. The illustrated transfer station 410 has a first side 411, a second side 412, a third side 413, and a fourth side 414. While four sides are shown, one skilled in the art will appreciate that the transfer station 410 may have any suitable number of sides depending, for example, on the overall configuration of the processing platform 400. In some embodiments, the transfer station 410 has three sides, four sides, five sides, six sides, seven sides, or eight sides.

[0074]

[0096] The transfer station 410 has a robot 430 disposed therein. The robot 430 may be any suitable robot capable of moving wafers during processing. In one embodiment, the robot 430 has a first arm 431 and a second arm 432. The first arm 431 and the second arm 432 may move independently of the other arm. The first arm 431 and the second arm 432 may move in the x-y plane and / or along the z-axis. In one embodiment, the robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each arm may move independently of the other arms.

[0075]

[0097] The illustrated embodiment includes six processing chambers 100, two coupled to each of a second side 412, a third side 413, and a fourth side 414 of a central transfer station 410. Each of the processing chambers 100 may be configured to perform a different process.

[0076]

[0098] The processing platform 400 may also include one or more buffer stations 420 coupled to the first side 411 of the central transfer station 410. The buffer stations 420 may perform the same or different functions. For example, the buffer stations may hold cassettes of wafers that are processed and returned to their original cassettes, or one of the buffer stations may hold unprocessed wafers that are moved to the other buffer station after processing. In some embodiments, one or more of the buffer stations is configured to pre-process, pre-heat, or clean wafers before and / or after processing.

[0077]

[0099] The processing platform 400 may include one or more slit valves 418 between the central transfer station 410 and any of the processing chambers 100. The slit valves 418 may be opened or closed to isolate the interior space within the processing chambers 100 from the environment within the central transfer station 410. For example, if a processing chamber will generate plasma during processing, it may be useful to close the slit valve of that processing chamber to prevent stray plasma from damaging a robot in the transfer station.

[0078]

[0100] The processing platform 400 may be coupled to a factory interface 450 to allow wafers or cassettes of wafers to be loaded into the processing platform 400. A robot 455 in the factory interface 450 may be used to move the wafers or cassettes into and out of the buffer station. The wafers or cassettes may be moved into the processing platform 400 by a robot 430 in a central transfer station 410. In one embodiment, the factory interface 450 is the transfer station of another cluster tool (i.e., another multi-chamber processing platform).

[0079]

[0101] A controller 495 may be provided and connected to the various components of the processing platform 400 to control their operation. The controller 495 may be a single controller that controls the entire processing platform 400, or may be multiple controllers that control individual portions of the processing platform 400. For example, the processing platform 400 may include individual controllers for each of the individual processing chambers 100, the central transfer station 410, the factory interface 450, and the robot 430.

[0080]

[0102] The controller 495 includes a central processing unit (CPU) 496, memory 497, and supporting circuits 498. The controller 495 may control the processing platform 400 directly or through computers (or controllers) associated with particular processing chambers and / or support system components.

[0081]

[0103] The controller 495 may be one of any form of general-purpose computer processor that may be used in an industrial environment to control various chambers and sub-processors. The memory 497 or computer-readable medium of the controller 495 may be one or more of readily available memory such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard disk, an optical storage medium (e.g., a compact disk or digital video disk), a flash drive, or any other form of local or remote digital storage. The memory 497 may hold a set of instructions executable by the processor (CPU 496) to control parameters and components of the processing platform 400.

[0082]

[0104] The auxiliary circuits 498 are connected to the CPU 496 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. One or more processes may be stored in the memory 498 as software routines that, when executed or invoked by the processor, cause the processor to control the operation of the processing platform 400 or individual processing chambers in the manner described herein. The software routines may also be stored and / or executed by a second CPU (not shown) located remotely from the hardware being controlled by the CPU 496.

[0083]

[0105] The processes and methods of the present disclosure can also be implemented in part or in whole in hardware. Thus, the processes may be implemented in software and executed using a computer system in hardware, for example, as an application specific integrated circuit or other type of hardware implementation, or a combination of software and hardware. The software routines, when executed by a processor, transform a general-purpose computer into a special-purpose computer (controller) that controls chamber operation so that processes are performed.

[0084]

[0106] In some embodiments, a controller 495 has one or more configurations for executing individual processes or subprocesses to perform the method. The controller 495 may be connected or configured to operate intermediate components to perform the functions of the method. For example, the controller 495 may be connected and configured to control one or more of the components, such as gas valves, actuators, motors, slit valves, vacuum controls, etc.

[0085]

[0107] 18A through 18I show various configurations of the processing chamber 100 with various processing stations 110. The lettered circles represent the various processing stations 110 and process conditions. For example, in FIG. 18A, there are four processing stations 110, each with a different letter. This represents four processing stations 110, each with different conditions than the other stations. As indicated by the arrows, the process can occur by moving the heater with the wafer from station A to D. After exposure to D, the cycle can continue or reverse.

[0086]

[0108] In FIG. 18B, two or four wafers can be processed simultaneously, with the wafers on the heater moving back and forth between positions A and B. Two wafers start at position A and two wafers start at position B. Independent processing stations 110 allow two of the stations to be switched off during the first cycle, so that each wafer starts with an A exposure. The heater and wafers may be rotated sequentially clockwise or counterclockwise. In one embodiment, the heater and wafer are rotated 90 degrees in a first direction (e.g., from A to B) and then 90 degrees in a second direction (e.g., from B back to A). This rotation can be repeated, resulting in four wafers / heaters being processed without rotating the support assembly more than about 90 degrees.

[0087]

[0109] The embodiment shown in Figure 18B may also be useful in processing two wafers in four processing stations 110. This may be particularly useful when one of the processes is at a very different pressure or when the process times of A and B are very different.

[0088]

[0110] 18C, three wafers may be processed in a single processing chamber 100 and with an ABC process. One station may either be switched off or perform a different function (e.g., preheating).

[0089]

[0111] In Figure 18D, two wafers may be processed in an AB-Treat process. For example, the wafers may be placed only on the B heater. After a quarter clockwise rotation, one wafer may be placed in the A station and the second wafer may be placed in the T station. After a back rotation, both wafers move to the B station, and after another quarter counterclockwise rotation, the second wafer is placed in the A station and the first wafer is placed in the B station.

[0090]

[0112] 18E, up to four wafers may be processed simultaneously. For example, if the A station is configured to perform a CVD or ALD process, four wafers may be processed simultaneously.

[0091]

[0113] 18F-18I show similar types of configurations for a processing chamber 100 having three processing stations 110. Briefly, in FIG. 18F, a single wafer (or two or more wafers) may be exposed to an ABC process. In FIG. 18G, two wafers may be exposed to an AB process by placing one wafer in the A position and another wafer in one of the B positions. The wafers may then be moved back and forth, whereby a wafer starting in the B position is moved to the A position in the first move and then returned to the same B position. In FIG. 18H, a wafer may be exposed to an AB-Treat process. In FIG. 18I, three wafers may be processed simultaneously.

[0092]

[0114] 19A and 19B illustrate another embodiment of the present disclosure. Figure 19A shows a partial view of the heater 230 and support plate 245 rotated into position below the processing station 110 so that the wafer 101 is adjacent the gas injector 112. The O-ring 329 on the support plate 245 or on the outer portion of the heater 230 is in a relaxed state.

[0093]

[0115] 19B shows the support plate 245 and heater 230 after they have been moved toward the processing station 110 so that the support surface 231 of the heater 230 is in contact or nearly in contact with the front surface 114 of the gas injector 112 in the processing station 110. In this position, the O-ring 329 is compressed and forms a seal around the outer edge of the support plate 245 or the outer portion of the heater 230. This allows the wafer 101 to be moved close to the gas injector 112 to minimize the volume of the reaction region 219 as much as possible so that the reaction region 219 can be purged quickly.

[0094]

[0116] Gases that may flow out of the reaction region 219 are exhausted through openings 338 into a plenum 336 to an exhaust or foreline (not shown). A purge gas curtain outside the openings 338 may be created by a purge gas plenum 370 and purge gas ports 371. Additionally, a gap 137 between the heater 230 and the support plate 245 may further curtain off the reaction region 219 and help prevent reaction gases from flowing into the interior space 109 of the processing chamber 100.

[0095]

[0117] Referring back to FIG. 17 , the controller 495 in one embodiment includes one or more components selected from: a configuration for moving a substrate on a robot between multiple processing chambers; a configuration for loading and / or unloading a substrate from the system; a configuration for opening / closing a slit valve; a configuration for supplying power to one or more of the heaters; a configuration for measuring the temperature of the heater; a configuration for measuring the temperature of a wafer on the heater; a configuration for loading or unloading a wafer from the heater; a configuration for providing feedback between temperature measurement and heater power control; a configuration for rotating the support assembly around an axis of rotation; a configuration for moving the support assembly along the axis of rotation (i.e., along the z-axis); a configuration for setting or changing the rotational speed of the support assembly; a configuration for supplying a flow of gas to a gas injector; a configuration for supplying power to one or more electrodes for generating plasma in the gas injector; a configuration for controlling a power supply for a plasma source; a configuration for controlling the frequency and / or power of a power supply for the plasma source; and / or a configuration for providing control for a thermal annealing processing station.

[0096]

[0118] References throughout this specification to "one embodiment," "certain embodiments," "one or more embodiments," or "an embodiment" mean that a particular feature, structure, material, or characteristic described in connection with an embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of phrases such as "in one or more embodiments," "in a particular embodiment," "in one embodiment," or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment of the present disclosure. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0097]

[0119] Although the disclosure herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed method and apparatus without departing from the spirit and scope of the disclosure. Therefore, it is intended that the present invention cover modifications and variations that come within the scope of the appended claims and their equivalents.

Claims

1. a rotatable central base defining an axis of rotation; at least two support arms extending from the central base, each of the support arms having an inner end in contact with the central base and an outer end; and A support assembly comprising a heater disposed on the outer end of each of the support arms, the heater having a support surface.

2. The support assembly of claim 1 , wherein the support arm extends perpendicular to the axis of rotation.

3. The support assembly of claim 1 , wherein there are three support arms and three heaters.

4. The support assembly of claim 1 , wherein there are four support arms and four heaters.

5. The support assembly of claim 1 , wherein the heater support surfaces are substantially coplanar.

6. The support assembly of claim 1 , wherein the center of the heater is positioned a fixed distance from the axis of rotation such that when the central base rotates, the heater moves in a single circular path.

7. The support assembly of claim 1 , further comprising at least one motor coupled to the central base, the at least one motor configured to rotate the support assembly about the axis of rotation.

8. 10. The support assembly of claim 1, further comprising at least one sealing platform disposed around the heater, the sealing platform having an upper surface forming a major surface substantially parallel to a major surface formed by the support surface of the heater.

9. The support assembly of claim 8 , wherein each heater has a sealing platform disposed around the heater, the sealing platform forming an annular-shaped upper surface.

10. The support assembly of claim 8 , wherein there is one sealing platform having an opening for each of the heaters to pass through the sealing platform.

11. a housing having a wall, a bottom, and a top defining an interior space; a plurality of processing stations within the interior space of the housing, the processing stations being arranged in a circular configuration about an axis of rotation, each processing station including a gas injector having a front surface, the front surfaces of each of the gas injectors being substantially coplanar; a support assembly within the interior space of the housing, the support assembly being positioned below the plurality of processing stations and including a rotatable central base from which a plurality of support arms extend, each support arm having an inner end in contact with the central base and an outer end, and a heater having a support surface being positioned on the outer end of each of the support arms.

12. 12. The processing chamber of claim 11, wherein there are an equal number of heaters, support arms, and processing stations configured such that each of the support surfaces of the heaters can be positioned adjacent the front surface of a different processing station simultaneously.

13. The processing chamber of claim 11 , wherein the heater support surfaces are substantially coplanar.

14. The processing chamber of claim 11 , further comprising at least one motor coupled to the central base, the at least one motor configured to rotate the support assembly about the axis of rotation.

15. 12. The processing chamber of claim 11, wherein each heater further comprises a sealing platform disposed around the heater, the sealing platform having an upper surface forming a major surface substantially parallel to a major surface formed by the support surface of the heater.

Images