Magnetic sensor

Abstract

To increase the intensity of a bias magnetic field applied to a magnetoresistance effect element.SOLUTION: The magnetic field sensor 1 includes a first MR device 50A and a first magnetic field generator 70A configured to generate a bias magnetic field. The first magnetic field generation body 70A has a first end Ed1 and a second end Ed2, and includes a first portion 701 including the first end Ed1 and a second portion 702 including the second end Ed2. The thickness T1 of the first portion 701 is larger than the thickness T2 of the second portion 702. The first MR elements 50A each have a third edge Ed3 and a fourth edge Ed4, and are arranged such that the distance between the first edge Ed1 and the third edge Ed3 in a direction parallel to the Y direction is smaller than the distance between the second edge Ed2 and the fourth edge Ed4 in the direction parallel to the Y direction.SELECTED DRAWING: Figure 15

Description

[Technical Field]

[0001] The present invention relates to a magnetic sensor configured so that a bias magnetic field can be applied to a magnetoresistive element. [Background technology]

[0002] In recent years, magnetic sensors have been used in a variety of applications. Known magnetic sensors include spin-valve magnetoresistive elements provided on a substrate. A spin-valve magnetoresistive element includes a fixed magnetization layer having a fixed magnetization direction, a free layer having a magnetization direction that can change depending on the direction of an applied magnetic field, and a gap layer disposed between the fixed magnetization layer and the free layer. Spin-valve magnetoresistive elements provided on a substrate are often configured to be sensitive to magnetic fields parallel to the surface of the substrate. Therefore, such magnetoresistive elements are suitable for detecting magnetic fields whose direction changes within a plane parallel to the surface of the substrate.

[0003] On the other hand, in a system including a magnetic sensor, it may be necessary to detect a magnetic field including a component perpendicular to the surface of the substrate using a magnetoresistive element provided on the substrate. In this case, the magnetoresistive element can be disposed on an inclined surface formed on the substrate to detect the magnetic field including a component perpendicular to the surface of the substrate.

[0004] Some magnetic sensors are equipped with a means for applying a bias magnetic field to the magnetoresistive element. The bias magnetic field is used, for example, to make the magnetoresistive element respond linearly to changes in the intensity of the target magnetic field, which is the magnetic field to be detected. In magnetic sensors using spin-valve magnetoresistive elements, the bias magnetic field is also used to make the free layer a single magnetic domain and to orient the magnetization direction of the free layer in a fixed direction when there is no target magnetic field.

[0005] Patent Document 1 discloses a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are provided on a substrate. A V-shaped groove is formed in a thick film on the substrate. The groove has a first slope located in the upper half of the groove and a second slope located in the lower half of the groove and having a steeper angle with respect to the substrate surface than the first slope. The giant magnetoresistive element constituting the Z-axis sensor has a strip-shaped portion located along the longitudinal direction of the slope and in a position with good flatness in the center of the second slope, and a bias magnet portion that applies a bias magnetic field to the strip-shaped portion.

[0006] Patent Document 2 discloses a magnetic sensor including a magnetoresistive element and two magnetic field generators arranged to sandwich the magnetoresistive element. The magnetic field generators include stacked antiferromagnetic and ferromagnetic layers, and are configured to apply a bias magnetic field to the magnetoresistive element. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-157979 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-176911 Summary of the Invention [Problem to be solved by the invention]

[0008] In the magnetic field generator disclosed in Patent Document 2, the strength of the bias magnetic field generated by the magnetic field generator can be increased by increasing the volume of the magnetic field generator. However, when attempting to form the magnetic field generator on an inclined surface, as in the magnetic sensor disclosed in Patent Document 1, the volume of the magnetic field generator may be smaller than when the magnetic field generator is formed on a flat surface. As a result, it may not be possible to apply a bias magnetic field of sufficient strength to the magnetoresistive effect element.

[0009] The present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetic sensor capable of increasing the strength of the bias magnetic field applied to the magnetoresistive element. [Means for solving the problem]

[0010] A magnetic sensor according to a first aspect of the present invention includes at least one magnetoresistive element, a ferromagnetic portion made of a ferromagnetic material, and an antiferromagnetic portion made of an antiferromagnetic material exchange-coupled with the ferromagnetic portion, and at least one magnetic field generator configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator when viewed from the first direction. The at least one magnetic field generator has a first end and a second end located at opposite ends in a second direction intersecting the first direction, a first surface connecting the first end and the second end, a film thickness that is a dimension perpendicular to the first surface, and includes a first portion including the first end and a second portion including the second end. In any cross section that intersects the at least one magnetic field generator and is perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion. At least one magnetoresistive element has a third end and a fourth end located at opposite ends in the second direction, and is arranged so that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

[0011] A magnetic sensor according to a second aspect of the present invention includes a substrate having an upper surface, a support member disposed on the substrate, at least one magnetoresistive element disposed on the support member, and at least one magnetic field generator disposed on the support member, the magnetic field generator including a ferromagnetic portion made of a ferromagnetic material and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, the magnetic field generator configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator when viewed from the first direction. The at least one magnetic field generator has first and second ends located at opposite ends in a second direction intersecting the first direction. The at least one magnetoresistive element has third and fourth ends located at opposite ends in the second direction. The first end is located farther from the upper surface than the second end. The third end is located farther from the top surface than the fourth end, and the at least one magnetoresistive element is arranged such that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

[0012] A magnetic sensor according to a third aspect of the present invention includes a substrate having an upper surface, a support member disposed on the substrate, at least one magnetoresistive element disposed on the support member, and at least one magnetic field generator disposed on the support member, the magnetic field generator including a ferromagnetic portion made of a ferromagnetic material and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, the magnetic field generator configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator when viewed from the first direction. The support member has a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator. The at least one magnetic field generator has first and second ends located at opposite ends in a second direction intersecting the first direction. In any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the inclination angle of the facing surface with respect to the top surface is larger at a second position on the facing surface that is closest to the second end than at a first position that is closest to the first end. The at least one magnetoresistance effect element has a third end and a fourth end located at opposite ends in the second direction, and is arranged so that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction. [Effects of the Invention]

[0013] In the magnetic sensors according to the first to third aspects of the present invention, at least one magnetoresistive element is arranged such that the distance between the first end and the third end is smaller than the distance between the second end and the fourth end, thereby achieving the effect of increasing the strength of the bias magnetic field applied to the at least one magnetoresistive element. [Brief explanation of the drawings]

[0014] [Figure 1]1 is a perspective view showing a magnetic sensor device including a magnetic sensor according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a side view showing the magnetic sensor device shown in FIG. [Figure 3] FIG. 2 is a functional block diagram showing the configuration of the magnetic sensor device shown in FIG. [Figure 4] FIG. 2 is a circuit diagram showing a circuit configuration of a first detection circuit according to the first embodiment of the present invention. [Figure 5] FIG. 3 is a circuit diagram showing a circuit configuration of a second detection circuit in the first embodiment of the present invention. [Figure 6] FIG. 1 is a plan view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 7] 7 is a cross-sectional view showing a part of the cross section at the position indicated by line 7-7 in FIG. 6. [Figure 8] 8 is a cross-sectional view showing a part of the cross section at the position indicated by line 8-8 in FIG. 6. [Figure 9] 1 is a plan view showing a magnetoresistive element, a magnetic field generator, a lower electrode, and an upper electrode according to a first embodiment of the present invention. [Figure 10] 1 is a perspective view showing a magnetoresistive effect element according to a first embodiment of the present invention. [Figure 11] FIG. 1 is a side view showing a magnetic field generator according to a first embodiment of the present invention. [Figure 12] 1 is a cross-sectional view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 13] 1 is a cross-sectional view showing a part of a magnetic sensor according to a first embodiment of the present invention. [Figure 14] FIG. 2 is an explanatory diagram for explaining the shape of a magnetic field generator according to the first embodiment of the present invention. [Figure 15] FIG. 2 is an explanatory diagram for explaining the positional relationship between a magnetic field generator and a magnetoresistive effect element in the first embodiment of the present invention. [Figure 16] 3 is a cross-sectional view showing a step in a method for manufacturing the magnetic sensor according to the first embodiment of the present invention. FIG. [Figure 17]FIG. 17 is a cross-sectional view showing a step subsequent to the step shown in FIG. [Figure 18] FIG. 10 is an explanatory diagram for explaining the shape of a magnetic field generator in a first modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 19] FIG. 10 is a plan view showing a magnetoresistive element, a magnetic field generator, a lower electrode, and an upper electrode in a second modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 20] FIG. 10 is a side view showing a magnetic field generator in a third modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 21] FIG. 10 is a side view showing a magnetic field generator in a fourth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 22] FIG. 10 is a side view showing a magnetic field generator in a fifth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 23] FIG. 13 is a side view showing a magnetic field generator in a sixth modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 24] FIG. 13 is a side view showing a magnetic field generator in a seventh modified example of the magnetic sensor according to the first embodiment of the present invention. [Figure 25] FIG. 6 is a cross-sectional view showing a part of a magnetic sensor according to a second embodiment of the present invention. [Figure 26] 10 is an explanatory diagram for explaining the shape and positional relationship between a magnetic field generator and a magnetoresistive effect element in a third embodiment of the present invention. FIG. [Figure 27] 10 is an explanatory diagram for explaining the shapes and positional relationship between a magnetic field generator and a magnetoresistive effect element in a modified example of the magnetic sensor according to the third embodiment of the present invention. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0015] [First embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. First, the configuration of a magnetic sensor device including a magnetic sensor according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. 1 is a perspective view showing the magnetic sensor device 100. Fig. 2 is a side view showing the magnetic sensor device 100. Fig. 3 is a functional block diagram showing the configuration of the magnetic sensor device 100.

[0016] The magnetic sensor device 100 of this embodiment includes a magnetic sensor 1 according to this embodiment and a processor 2. The magnetic sensor 1 is configured to detect a target magnetic field, which is a magnetic field to be detected by the magnetic sensor 1, and generate at least one detection signal. The magnetic sensor 1 may be a geomagnetic sensor that detects geomagnetism, a magnetic sensor for a position detection device that detects the position of a magnet moving in a predetermined direction, a magnetic sensor for an angle sensor or magnetic encoder that detects a rotating magnetic field, or a magnetic sensor for a current sensor that detects a magnetic field generated by a current to be detected.

[0017] The processor 2 is configured to generate at least one detection value corresponding to the target magnetic field based on the at least one detection signal. The processor 2 is configured, for example, by an application specific integrated circuit (ASIC).

[0018] The magnetic sensor 1 and the processor 2 each have the form of a rectangular parallelepiped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface 1b located opposite each other, and four side surfaces connecting the upper surface 1a and the lower surface 1b. The processor 2 has an upper surface 2a and a lower surface 2b located opposite each other, and four side surfaces connecting the upper surface 2a and the lower surface 2b. The magnetic sensor 1 is mounted on the upper surface 2a of the processor 2, with the lower surface 1b of the magnetic sensor 1 facing the upper surface 2a of the processor 2. The magnetic sensor 1 is bonded to the processor 2, for example, by adhesive.

[0019] Here, the X direction, Y direction, and Z direction are defined as shown in FIGS. 1 and 2. The X direction, Y direction, and Z direction are perpendicular to one another. In this embodiment, the Z direction is defined as the direction perpendicular to the top surface 1a of the magnetic sensor 1, and the direction from the bottom surface 1b of the magnetic sensor 1 toward the top surface 1a. The direction opposite the X direction is defined as the -X direction, the direction opposite the Y direction is defined as the -Y direction, and the direction opposite the Z direction is defined as the -Z direction.

[0020] Hereinafter, a position further in the Z direction than the reference position will be referred to as "above," and a position on the opposite side of "above" than the reference position will be referred to as "below." Furthermore, with regard to the components of the magnetic sensor 1, the surface located at the end in the Z direction will be referred to as the "top surface," and the surface located at the end in the -Z direction will be referred to as the "bottom surface." Furthermore, the expression "when viewed from a specified direction (e.g., the Z direction)" means viewing the object from a position away from the specified direction or in one direction parallel to the specified direction.

[0021] As shown in FIG. 2, the U direction and V direction are defined as follows: The U direction is the direction rotated from the Y direction toward the -Z direction. The V direction is the direction rotated from the Y direction toward the Z direction. In this embodiment, the U direction is defined as the direction rotated by α from the Y direction toward the -Z direction, and the V direction is defined as the direction rotated by α from the Y direction toward the Z direction. Note that α is an angle greater than 0° and smaller than 90°. The direction opposite the U direction is defined as the -U direction, and the direction opposite the V direction is defined as the -V direction. The U direction and V direction are each perpendicular to the X direction.

[0022] The magnetic sensor 1 has a plurality of first pads (electrode pads) provided on the upper surface 1a. The processor 2 has a plurality of second pads (electrode pads) provided on the upper surface 2a. In the magnetic sensor 1, two corresponding pads of the plurality of first pads and the plurality of second pads are connected to each other by a bonding wire.

[0023] The magnetic sensor 1 includes a first detection circuit 10 and a second detection circuit 20. The first and second detection circuits 10, 20 are connected to the processor 2 via a plurality of first pads, a plurality of second pads, and a plurality of bonding wires.

[0024] Each of the first and second detection circuits 10 and 20 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In this embodiment, the plurality of magnetic detection elements are particularly a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect elements will be referred to as MR elements.

[0025] Next, the circuit configurations of the first and second detection circuits 10, 20 will be described with reference to Figures 4 and 5. Figure 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. Figure 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20.

[0026] The first detection circuit 10 is configured to detect a component of the target magnetic field parallel to the U direction and generate at least one first detection signal corresponding to this component. The second detection circuit 20 is configured to detect a component of the target magnetic field parallel to the V direction and generate at least one second detection signal corresponding to this component.

[0027] 4, the first detection circuit 10 includes four resistor units R11, R12, R13, and R14, a power supply terminal V1, a ground terminal G1, a first output terminal E11, and a second output terminal E12. The multiple MR elements of the first detection circuit 10 constitute the resistor units R11, R12, R13, and R14.

[0028] The resistor R11 is provided between the power supply terminal V1 and the first output terminal E11. The resistor R12 is provided between the first output terminal E11 and the ground terminal G1. The resistor R13 is provided between the second output terminal E12 and the ground terminal G1. The resistor R14 is provided between the power supply terminal V1 and the second output terminal E12.

[0029] 5, the second detection circuit 20 includes four resistor units R21, R22, R23, and R24, a power supply terminal V2, a ground terminal G2, a first output terminal E21, and a second output terminal E22. The multiple MR elements of the second detection circuit 20 configure the resistor units R21, R22, R23, and R24.

[0030] The resistor R21 is provided between the power supply terminal V2 and the first output terminal E21. The resistor R22 is provided between the first output terminal E21 and the ground terminal G2. The resistor R23 is provided between the second output terminal E22 and the ground terminal G2. The resistor R24 ​​is provided between the power supply terminal V2 and the second output terminal E22.

[0031] A voltage or current of a predetermined magnitude is applied to each of the power supply terminals V1 and V2, and each of the ground terminals G1 and G2 is connected to the ground.

[0032] Hereinafter, the multiple MR elements of the first detection circuit 10 will be referred to as multiple first MR elements 50A, and the multiple MR elements of the second detection circuit 20 will be referred to as multiple second MR elements 50B. Because the first and second detection circuits 10 and 20 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50A and multiple second MR elements 50B. Furthermore, any MR element will be represented by the symbol 50.

[0033] In this embodiment, the MR element 50 is a spin-valve MR element. The MR element 50 includes a fixed magnetization layer having a fixed magnetization direction, a free layer having a magnetization direction that can be changed depending on the direction of a target magnetic field, and a gap layer disposed between the fixed magnetization layer and the free layer. The MR element 50 may be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer is a tunnel barrier layer. In a GMR element, the gap layer is a nonmagnetic conductive layer. In the MR element 50, the resistance value varies depending on the angle between the magnetization direction of the free layer and the magnetization direction of the fixed magnetization layer. When this angle is 0°, the resistance value is minimum, and when this angle is 180°, the resistance value is maximum. In each MR element 50, the free layer has shape anisotropy such that the easy axis of magnetization is perpendicular to the magnetization direction of the fixed magnetization layer.

[0034] 4 and 5, multiple solid arrows overlapping each resistance portion represent the magnetization direction of the magnetization fixed layer of the MR element 50. Additionally, multiple open arrows overlapping each resistance portion represent the magnetization direction of the free layer of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0035] In the example shown in FIG. 4, the magnetization direction of the magnetization fixed layer in each of the resistor units R11 and R13 is the U direction. The magnetization direction of the magnetization fixed layer in each of the resistor units R12 and R14 is the -U direction. Furthermore, the free layer of each of the multiple first MR elements 50A has shape anisotropy in which the magnetization easy axis direction is parallel to the X direction. When no target magnetic field is applied to the first MR element 50A, the magnetization direction of the free layer in each of the resistor units R11 and R12 is the X direction. In the above case, the magnetization direction of the free layer in each of the resistor units R13 and R14 is the -X direction.

[0036] In the example shown in FIG. 5, the magnetization direction of the magnetization fixed layer in each of the resistor units R21 and R23 is the V direction. The magnetization direction of the magnetization fixed layer in each of the resistor units R22 and R24 is the −V direction. Furthermore, the free layer of each of the second MR elements 50B has shape anisotropy in which the magnetization easy axis direction is parallel to the X direction. When no target magnetic field is applied to the second MR element 50B, the magnetization direction of the free layer in each of the resistor units R21 and R22 is the X direction. In the above case, the magnetization direction of the free layer in each of the resistor units R23 and R24 is the −X direction.

[0037] The magnetic sensor 1 further includes at least one magnetic field generator that generates a bias magnetic field to be applied to at least one MR element 50. In this embodiment, the magnetic sensor 1 includes at least one magnetic field generator, which includes a plurality of first magnetic field generators 70A and a plurality of second magnetic field generators 70B. Note that any of the magnetic field generators will be denoted by the reference symbol 70.

[0038] 4, arrows labeled M11, M12, M13, and M14 indicate the directions of bias magnetic fields applied to the first MR elements 50A by the first magnetic field generators 70A. In the resistor units R11 and R12, the first magnetic field generators 70A apply a bias magnetic field in the X direction to the first MR elements 50A. In the resistor units R13 and R14, the first magnetic field generators 70A apply a bias magnetic field in the −X direction to the first MR elements 50A.

[0039] 5, arrows labeled M21, M22, M23, and M24 indicate the directions of bias magnetic fields applied to the second MR elements 50B by the second magnetic field generators 70B. In the resistors R21 and R22, the second magnetic field generators 70B apply a bias magnetic field in the X direction to the second MR elements 50B. In the resistors R23 and R24, the second magnetic field generators 70B apply a bias magnetic field in the −X direction to the second MR elements 50B.

[0040] The magnetization direction of the magnetization pinned layer, the direction of the easy axis of magnetization of the free layer, and the direction of the bias magnetic field applied to the MR element 50 by the multiple magnetic field generators 70 may be slightly deviated from the above-mentioned directions in view of the accuracy of manufacturing the MR element 50 and the magnetic field generators 70. The magnetization of the magnetization pinned layer may be configured to include a magnetization component whose main component is the above-mentioned direction. In this case, the magnetization direction of the magnetization pinned layer is the above-mentioned direction or approximately the above-mentioned direction.

[0041] Next, the first and second detection signals will be described. First, the first detection signal will be described with reference to FIG. 4. When the intensity of the component of the target magnetic field parallel to the U direction changes, the resistance values ​​of the resistors R11 to R14 of the first detection circuit 10 change such that the resistance values ​​of the resistors R11 and R13 increase while the resistance values ​​of the resistors R12 and R14 decrease, or the resistance values ​​of the resistors R11 and R13 decrease while the resistance values ​​of the resistors R12 and R14 increase. This causes a change in the potential of each of the first and second output terminals E11 and E12. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the first output terminal E11 as the first detection signal S11 and generate a signal corresponding to the potential of the second output terminal E12 as the first detection signal S12.

[0042] Next, the second detection signal will be described with reference to FIG. 5. When the intensity of the component of the target magnetic field parallel to the V direction changes, the resistance values ​​of the resistors R21 to R24 of the second detection circuit 20 change such that the resistance values ​​of the resistors R21 and R23 increase while the resistance values ​​of the resistors R22 and R24 decrease, or the resistance values ​​of the resistors R21 and R23 decrease while the resistance values ​​of the resistors R22 and R24 increase. This causes a change in the potential of each of the first and second output terminals E21 and E22. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the first output terminal E21 as the second detection signal S21 and generate a signal corresponding to the potential of the second output terminal E22 as the second detection signal S22.

[0043] Next, the operation of the processor 2 will be described. The processor 2 is configured to generate a first detection value and a second detection value based on the first detection signals S11, S12 and the second detection signals S21, S22. The first detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the Y direction. The second detection value is a detection value corresponding to a component of the target magnetic field in a direction parallel to the Z direction. Hereinafter, the first detection value will be represented by the symbol Sy, and the second detection value will be represented by the symbol Sz.

[0044] The processor 2 generates the first and second detection values ​​Sy and Sz, for example, as follows: The processor 2 first generates a value S1 by a calculation that includes determining the difference S11-S12 between the first detection signal S11 and the first detection signal S12, and also generates a value S2 by a calculation that includes determining the difference S21-S22 between the second detection signal S21 and the second detection signal S22. Next, the processor 2 calculates the values ​​S3 and S4 using the following equations (1) and (2).

[0045] S3 = (S2 + S1) / (2cosα) … (1) S4 = (S2 - S1) / (2 sin α) ... (2)

[0046] The first detection value Sy may be the value S3 itself, or may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been made. Similarly, the second detection value Sz may be the value S4 itself, or may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been made.

[0047] Next, the specific structure of the magnetic sensor 1 will be described in detail with reference to Fig. 6 to Fig. 8. Fig. 6 is a plan view showing a part of the magnetic sensor 1. Fig. 7 shows a part of a cross section taken along line 7-7 in Fig. 6. Fig. 8 shows a part of a cross section taken along line 8-8 in Fig. 6.

[0048] The magnetic sensor 1 includes a substrate 31 having an upper surface 31a, insulating layers 32, 33, 34, 35, 36, and 37, a plurality of lower electrodes 41A, a plurality of lower electrodes 41B, a plurality of upper electrodes 42A, and a plurality of upper electrodes 42B. The upper surface 31a of the substrate 31 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 31a of the substrate 31. In this embodiment, the upper surface 31a of the substrate 31 may be used as a "reference plane" that is a reference for the arrangement and shape of the components of the magnetic sensor 1.

[0049] The insulating layers 32 and 33 are stacked in this order on the substrate 31. A plurality of lower electrodes 41A and a plurality of lower electrodes 41B are disposed on the insulating layer 33. An insulating layer 34 is disposed on the insulating layer 33 around the plurality of lower electrodes 41A and the plurality of lower electrodes 41B. A plurality of first MR elements 50A are disposed on the plurality of lower electrodes 41A. A plurality of second MR elements 50B are disposed on the plurality of lower electrodes 41B. An insulating layer 35 is disposed on the plurality of lower electrodes 41A, the plurality of lower electrodes 41B, and the insulating layer 34 around the plurality of first MR elements 50A and the plurality of second MR elements 50B. A plurality of upper electrodes 42A are disposed on the plurality of first MR elements 50A and the insulating layer 35. A plurality of upper electrodes 42B are disposed on the plurality of second MR elements 50B and the insulating layer 35. The insulating layer 36 is disposed around the plurality of upper electrodes 42A and the plurality of upper electrodes 42B on the insulating layer 35. The insulating layer 37 is disposed on the plurality of upper electrodes 42A, the plurality of upper electrodes 42B, and the insulating layer 36.

[0050] The plurality of first magnetic field generators 70A and the plurality of second magnetic field generators 70B are embedded in the insulating layer 35. Each of the plurality of first magnetic field generators 70A is disposed at a distance from the first MR element 50A and the lower electrode 41A. Each of the plurality of second magnetic field generators 70B is disposed at a distance from the second MR element 50B and the lower electrode 41B. The magnetic sensor 1 may further include insulating films interposed between each of the plurality of first magnetic field generators 70A and each of the plurality of first MR elements 50A, between each of the plurality of second magnetic field generators 70B and each of the plurality of second MR elements 50B, between each of the plurality of first magnetic field generators 70A and each of the plurality of lower electrodes 41A, and between each of the plurality of second magnetic field generators 70B and each of the plurality of lower electrodes 41B.

[0051] The upper surfaces of some of the multiple first magnetic field generators 70A may be in contact with the lower surfaces of the multiple upper electrodes 42A. The upper surfaces of some of the multiple second magnetic field generators 70B may be in contact with the lower surfaces of the multiple upper electrodes 42B. Alternatively, the magnetic sensor 1 may further include other insulating films interposed between each of the multiple first magnetic field generators 70A and the multiple upper electrodes 42A, and between each of the multiple second magnetic field generators 70B and the multiple upper electrodes 42B.

[0052] The magnetic sensor 1 includes a support member that supports the plurality of first MR elements 50A and the plurality of second MR elements 50B. In this embodiment, the support member is particularly configured by an insulating layer 33. The insulating layer 33 is disposed substantially on the upper surface 31a of the substrate 31. Note that, of the components of the magnetic sensor 1, FIG. 6 shows the insulating layer 33, the plurality of first MR elements 50A, the plurality of second MR elements 50B, the plurality of first magnetic field generators 70A, and the plurality of second magnetic field generators 70B.

[0053] The insulating layer 33 has a plurality of opposing surfaces 33c that each extend in a direction (Z direction) away from the upper surface 31a of the substrate 31. Each of the plurality of opposing surfaces 33c extends in a direction parallel to the X direction. The overall shape of the opposing surface 33c is a semi-cylindrical curved surface formed by shifting the curved shape (arch shape) of the opposing surface 33c shown in Figures 7 and 8 along a direction parallel to the X direction. The plurality of opposing surfaces 33c are also aligned at predetermined intervals in a direction parallel to the Y direction.

[0054] Each of the multiple opposing surfaces 33c has an upper end portion that is the end portion of the opposing surface 33c located farthest from the upper surface 31a of the substrate 31. In this embodiment, the upper end portion of each of the multiple opposing surfaces 33c extends in a direction parallel to the X direction. Here, attention is focused on any one of the multiple opposing surfaces 33c. The opposing surface 33c includes a first inclined surface 33a and a second inclined surface 33b. The first inclined surface 33a is a surface of the opposing surface 33c that is closer to the Y direction than the upper end portion of the opposing surface 33c. The second inclined surface 33b is a surface of the opposing surface 33c that is closer to the -Y direction than the upper end portion of the opposing surface 33c. In FIG. 6, the boundary between the first inclined surface 33a and the second inclined surface 33b is indicated by a dotted line.

[0055] The upper end of the opposing surface 33c may be the boundary between the first inclined surface 33a and the second inclined surface 33b. In this case, the dotted line shown in Fig. 6 indicates the upper end of the opposing surface 33c.

[0056] The top surface 31a of the substrate 31 is parallel to the XY plane. The first inclined surface 33a and the second inclined surface 33b are each inclined with respect to the top surface 31a of the substrate 31, i.e., the XY plane. In a cross section perpendicular to the top surface 31a of the substrate 31, the distance between the first inclined surface 33a and the second inclined surface 33b decreases with increasing distance from the top surface 31a of the substrate 31.

[0057] In this embodiment, since there are multiple opposing surfaces 33c, there are also multiple first inclined surfaces 33a and multiple second inclined surfaces 33b. The insulating layer 33 has multiple first inclined surfaces 33a and multiple second inclined surfaces 33b.

[0058] The insulating layer 33 further has a flat surface 33d that exists around the multiple opposing surfaces 33c. The flat surface 33d is a surface parallel to the upper surface 31a of the substrate 31. Each of the multiple opposing surfaces 33c protrudes in the Z direction from the flat surface 33d. In this embodiment, the multiple opposing surfaces 33c are arranged with a gap between them. Therefore, a flat surface 33d exists between two opposing surfaces 33c that are adjacent in the Y direction.

[0059] The insulating layer 33 may have a groove recessed from the flat surface 33d toward the −Z direction. In this case, the multiple opposing surfaces 33c may be present within the groove.

[0060] The plurality of lower electrodes 41A are disposed on the plurality of first inclined surfaces 33a. The plurality of lower electrodes 41B are disposed on the plurality of second inclined surfaces 33b. As described above, the first inclined surface 33a and the second inclined surface 33b are each inclined with respect to the reference plane, i.e., the upper surface 31a of the substrate 31. Therefore, the upper surface of each of the plurality of lower electrodes 41A and the plurality of lower electrodes 41B is also inclined with respect to the upper surface 31a of the substrate 31. Therefore, it can be said that the plurality of first MR elements 50A and the plurality of second MR elements 50B are disposed on inclined surfaces inclined with respect to the upper surface 31a of the substrate 31. The insulating layer 33 is a member for supporting each of the plurality of first MR elements 50A and the plurality of second MR elements 50B so that they are inclined with respect to the upper surface 31a of the substrate 31.

[0061] The plurality of first magnetic field generators 70A are disposed substantially on the plurality of first inclined surfaces 33a. Each of the plurality of first magnetic field generators 70A has a lower surface having a shape that follows the shape of the first inclined surface 33a.

[0062] The second magnetic field generators 70B are disposed substantially on the second inclined surfaces 33b. Each of the second magnetic field generators 70B has a lower surface shaped along the second inclined surfaces 33b.

[0063] The opposing surface 33c of the insulating layer 33 faces the first MR element 50A, the second MR element 50B, the first magnetic field generator 70A, and the second magnetic field generator 70B. The first and second inclined surfaces 33a and 33b are also curved portions of the opposing surface 33c.

[0064] Here, attention is focused on an arbitrary first magnetic field generator 70A among the plurality of first magnetic field generators 70A and an arbitrary second magnetic field generator 70B among the plurality of second magnetic field generators 70B. As shown in FIG. 6, the plurality of first magnetic field generators 70A are arranged in a row in the X direction and a row in the Y direction. Each of the plurality of first MR elements 50A is disposed between two adjacent first magnetic field generators 70A in a direction parallel to the X direction. On one first inclined surface 33a, the plurality of first MR elements 50A and the plurality of first magnetic field generators 70A are arranged in a row in a direction parallel to the X direction.

[0065] Similarly, the multiple second magnetic field generators 70B are arranged in a row in both the X and Y directions. Each of the multiple second MR elements 50B is disposed between two adjacent second magnetic field generators 70B in a direction parallel to the X direction. On one second inclined surface 33b, the multiple second MR elements 50B and the multiple second magnetic field generators 70B are arranged in a row in a direction parallel to the X direction.

[0066] A row consisting of a plurality of first MR elements 50A and a plurality of first magnetic field generators 70A and a row consisting of a plurality of second MR elements 50B and a plurality of second magnetic field generators 70B are alternately arranged in a direction parallel to the Y direction. The plurality of first MR elements 50A and the plurality of second MR elements 50B may be arranged such that the first MR elements 50A and the second MR elements 50B are alternately arranged in a direction parallel to the Y direction. The plurality of first magnetic field generators 70A and the plurality of second magnetic field generators 70B may be arranged such that the first magnetic field generators 70A and the second magnetic field generators 70B are alternately arranged in a direction parallel to the Y direction.

[0067] The plurality of first MR elements 50A are connected in series by a plurality of lower electrodes 41A and a plurality of upper electrodes 42A. The plurality of second MR elements 50B are connected in series by a plurality of lower electrodes 41B and a plurality of upper electrodes 42B. Here, a method for connecting the plurality of first MR elements 50A and a method for connecting the plurality of second MR elements 50B will be described in detail with reference to FIG. 9.

[0068] As shown in Fig. 9, each lower electrode 41A has an elongated shape. A gap is formed between two lower electrodes 41A adjacent to each other in the longitudinal direction of the lower electrodes 41A. A first MR element 50A is disposed on the upper surface of each lower electrode 41A near both ends in the longitudinal direction. Each upper electrode 42A has an elongated shape and is disposed on two lower electrodes 41A adjacent to each other in the longitudinal direction of the lower electrodes 41A to electrically connect the two adjacent first MR elements 50A to each other.

[0069] A first magnetic field generator 70A is disposed between two first MR elements 50A adjacent to each other in the longitudinal direction of the lower electrode 41A. FIG. 9 shows an example in which two first magnetic field generators 70A are disposed between the two first MR elements 50A. However, one first magnetic field generator 70A may be disposed between the two first MR elements 50A. FIG. 9 also shows an example in which the two first magnetic field generators 70A between the two first MR elements 50A overlap with the two lower electrodes 41A when viewed from the Z direction. However, the two first magnetic field generators 70A between the two first MR elements 50A may overlap with only one of the two lower electrodes 41A when viewed from the Z direction. Alternatively, the first magnetic field generator 70A does not have to overlap with the two lower electrodes 41A when viewed from the Z direction. Furthermore, the first magnetic field generator 70A may or may not be in contact with the upper electrode 42A.

[0070] Although not shown, one first MR element 50A located at an end of a row of a plurality of first MR elements 50A arranged in a row is connected to another first MR element 50A located at an end of the row of a plurality of adjacent first MR elements 50A in a direction intersecting the longitudinal direction of the lower electrode 41A. These two first MR elements 50A are connected to each other by an electrode not shown. The electrode not shown may be an electrode connecting the bottom surfaces or top surfaces of the two first MR elements 50A.

[0071] The above description of the first MR element 50A, first magnetic field generator 70A, lower electrode 41A, and upper electrode 42A also applies to the second MR element 50B, second magnetic field generator 70B, lower electrode 41B, and upper electrode 42B. If the first MR element 50A, first magnetic field generator 70A, lower electrode 41A, and upper electrode 42A in the above description are replaced with the second MR element 50B, second magnetic field generator 70B, lower electrode 41B, and upper electrode 42B, respectively, the description becomes one of the second MR element 50B, second magnetic field generator 70B, lower electrode 41B, and upper electrode 42B.

[0072] Next, the configuration of the MR element 50 will be described in more detail with reference to FIG. 10. In FIG. 10, reference numeral 52 denotes a magnetization pinned layer, reference numeral 53 denotes a gap layer, and reference numeral 54 denotes a free layer. The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization pinned layer 52, the gap layer 53, and the free layer 54 are stacked in this order from the bottom electrode 41 toward the top electrode 42. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization pinned layer 52 to fix the magnetization direction of the magnetization pinned layer 52. The magnetization pinned layer 52 may be a so-called self-pinned type pinned layer (synthetic ferri-pinned layer, SFP layer). The self-pinned type pinned layer has a laminated ferri-structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. When the magnetization fixed layer 52 is a self-pinned type fixed layer, the antiferromagnetic layer 51 may be omitted.

[0073] The layers 51 to 54 in the MR element 50 may be arranged upside down relative to the arrangement shown in FIG.

[0074] In the first MR element 50A, the antiferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are stacked along a direction perpendicular to the first inclined surface 33a (see FIGS. 6 and 7). In the second MR element 50B, the antiferromagnetic layer 51, the magnetization fixed layer 52, the gap layer 53, and the free layer 54 are stacked along a direction perpendicular to the second inclined surface 33b.

[0075] Next, the configuration of the magnetic field generator 70 will be described with reference to Fig. 11. Fig. 11 is a side view showing the magnetic field generator 70. The magnetic field generator 70 includes a ferromagnetic part 73 and an antiferromagnetic part 72 that is in contact with the ferromagnetic part 73 and exchange-coupled with the ferromagnetic part 73.

[0076] The ferromagnetic portion 73 has magnetization as a whole of the ferromagnetic portion 73. The magnetization of the whole of the ferromagnetic portion 73 is the volume average of the vector sum of the magnetic moments of each unit, such as an atom or a crystal lattice, in the whole of the ferromagnetic portion 73. Hereinafter, the magnetization of the whole of the ferromagnetic portion 73 will be simply referred to as the magnetization of the ferromagnetic portion 73.

[0077] In the magnetic field generator 70, the direction of magnetization of the ferromagnetic part 73 is determined by exchange coupling between the antiferromagnetic part 72 and the ferromagnetic part 73. The ferromagnetic part 73 and the antiferromagnetic part 72 generate a bias magnetic field that is applied to the MR element 50 based on the magnetization of the ferromagnetic part 73. The magnetic field generator 70 configured in this manner has high resistance to external disturbance magnetic fields.

[0078] The ferromagnetic portion 73 is made of a ferromagnetic material containing one or more elements of Co, Fe, and Ni. Examples of such ferromagnetic materials include CoFe, CoFeB, and CoNiFe. The antiferromagnetic portion 72 is made of an antiferromagnetic material such as IrMn or PtMn.

[0079] The magnetic field generator 70 further includes a buffer layer 71 and a cap layer 74. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic portion 73, and the cap layer 74 are stacked in this order. The buffer layer 71 and the cap layer 74 are each made of a non-magnetic metal material such as Ru, Ta, Cu, or Cr.

[0080] 8 and 11, the stacking direction and bottom surfaces of the antiferromagnetic portion 72 and the ferromagnetic portion 73 in the first and second magnetic field generators 70A and 70B will be described. In the first magnetic field generator 70A, the antiferromagnetic portion 72 and the ferromagnetic portion 73 are stacked in a direction perpendicular to the first inclined surface 33a. Each of the antiferromagnetic portion 72 and the ferromagnetic portion 73 has a bottom surface that faces the first inclined surface 33a and is inclined with respect to the reference plane, i.e., the top surface 31a of the substrate 31. Such a bottom surface can be realized by forming each of the buffer layer 71 and the antiferromagnetic portion 72 to a thickness that reveals the shape of the first inclined surface 33a.

[0081] In the second magnetic field generator 70B, the antiferromagnetic portion 72 and the ferromagnetic portion 73 are stacked in a direction perpendicular to the second inclined surface 33b. Each of the antiferromagnetic portion 72 and the ferromagnetic portion 73 has a lower surface that faces the second inclined surface 33b and is inclined with respect to the reference plane, i.e., the upper surface 31a of the substrate 31. Such a lower surface can be realized by forming each of the buffer layer 71 and the antiferromagnetic portion 72 to a thickness that corresponds to the shape of the second inclined surface 33b.

[0082] Next, features related to the shapes and arrangements of the MR element 50 and the magnetic field generator 70 will be described with reference to FIGS. 6 to 9, 12, and 13. FIGS. 12 and 13 are cross-sectional views showing a portion of the magnetic sensor 1. FIG. 12 shows a cross section parallel to the XZ plane and perpendicular to the upper surface 31a of the substrate 31, intersecting with the second MR element 50B and the second magnetic field generator 70B. FIG. 13 shows a cross section parallel to the YZ plane and perpendicular to the upper surface 31a of the substrate 31, intersecting with the second magnetic field generator 70B.

[0083] Hereinafter, even when explanations are given with reference to Figures 12 and 13, features common to the first MR element 50A and the second MR element 50B will be explained as features of the MR element 50, and features common to the first magnetic field generator 70A and the second magnetic field generator 70B will be explained as features of the magnetic field generator 70.

[0084] The magnetic field generator 70 is disposed with a gap between it and the MR element 50. An insulating layer 35 is interposed between the MR element 50 and the magnetic field generator 70.

[0085] The dimension of the magnetic field generator 70 in a direction parallel to the Y direction is larger than the dimension of the MR element 50 in a direction parallel to the Y direction. At least a portion of the MR element 50 overlaps with the magnetic field generator 70 when viewed from the X direction. In particular, in this embodiment, at least a portion of the free layer 54 of the MR element 50 may overlap with the ferromagnetic portion 73 of the magnetic field generator 70 when viewed from the X direction.

[0086] Here, as shown in FIG. 13, a first direction D1 parallel to the YZ plane is defined. The first direction D1 is a direction along the first inclined surface 33a or the second inclined surface 33b and is a direction away from the upper surface 31a of the substrate 31. As shown in FIG. 13, when the first direction D1 is defined as a direction along the second inclined surface 33b, the first direction D1 is a direction between the Y direction and the Z direction. Although not shown, when the first direction D1 is defined as a direction along the first inclined surface 33a, the first direction D1 is a direction between the -Y direction and the Z direction.

[0087] In the following description, the direction along the first inclined surface 33a or the second inclined surface 33b and parallel to the first direction D1 will be simply referred to as the direction along the inclined surface. This direction is the direction along the inclined surface and also the direction in which the distance from the upper surface 31a of the substrate 31 changes. The dimension of the magnetic field generator 70 in the direction along the inclined surface is larger than the dimension of the MR element 50 in the direction along the inclined surface.

[0088] The MR element 50 has a bottom surface 50a facing the first inclined surface 33a or the second inclined surface 33b, a top surface 50b opposite the bottom surface 50a, and four side surfaces 50c, 50d, 50e, and 50f connecting the bottom surface 50a and the top surface 50b. The side surfaces 50c and 50d are shown in FIG. 15, which will be described later. In this embodiment, particularly, all of the side surfaces 50c to 50f are located above the first inclined surface 33a or the second inclined surface 33b.

[0089] The side surface 50c is located at the end of the MR element 50 in the first direction D1. The side surface 50d is located at the end of the MR element 50 in the direction opposite to the first direction D1. In the first MR element 50A, the side surface 50c is located at the end of the first MR element 50A in the -Y direction, and the side surface 50d is located at the end of the first MR element 50A in the Y direction. In the second MR element 50B, the side surface 50c is located at the end of the second MR element 50B in the Y direction, and the side surface 50d is located at the end of the second MR element 50B in the -Y direction.

[0090] The side surface 50e is located at the end of the MR element 50 in the X direction. The side surface 50f is located at the end of the MR element 50 in the −X direction.

[0091] 12, each of the side surfaces 50e and 50f of the MR element 50 is inclined with respect to the upper surface 31a of the substrate 31. In one MR element 50, the distance between the side surface 50e and the side surface 50f in a direction parallel to the X direction decreases with increasing distance from the upper surface 31a of the substrate 31. Although not shown, each of the side surfaces 50c and 50d of the MR element 50 is inclined with respect to the upper surface 31a of the substrate 31. In one MR element 50, the distance between the side surface 50c and the side surface 50d in the direction along the inclined surface may decrease with increasing distance from the first inclined surface 33a or the second inclined surface 33b located below the MR element 50.

[0092] The magnetic field generator 70 has a lower surface 70a facing the first inclined surface 33a or the second inclined surface 33b, an upper surface 70b opposite the lower surface 70a, and four side surfaces 70c, 70d, 70e, and 70f connecting the lower surface 70a and the upper surface 70b. In this embodiment, particularly, all of the side surfaces 70c to 70f are located above the first inclined surface 33a or the second inclined surface 33b.

[0093] The side surface 70c is located at the end of the magnetic field generator 70 in the first direction D1. The side surface 70d is located at the end of the magnetic field generator 70 in the direction opposite to the first direction D1. In the first magnetic field generator 70A, the side surface 70c is located at the end of the first magnetic field generator 70A in the -Y direction, and the side surface 70d is located at the end of the first magnetic field generator 70A in the Y direction. In the second magnetic field generator 70B, the side surface 70c is located at the end of the second magnetic field generator 70B in the Y direction, and the side surface 70d is located at the end of the second magnetic field generator 70B in the -Y direction.

[0094] The side surface 70e is located at the end of the magnetic field generator 70 in the X direction. The side surface 70f is located at the end of the magnetic field generator 70 in the −X direction.

[0095] As shown in Fig. 12, each of the side surfaces 70e, 70f of the magnetic field generator 70 is inclined with respect to the upper surface 31a of the substrate 31. In one magnetic field generator 70, the distance between the side surface 70e and the side surface 70f in a direction parallel to the X direction increases with increasing distance from the upper surface 31a of the substrate 31. As shown in Fig. 13, each of the side surfaces 70c, 70d of the magnetic field generator 70 is inclined with respect to the upper surface 31a of the substrate 31. In one magnetic field generator 70, the distance between the side surface 70c and the side surface 70d in the direction along the inclined surface increases with increasing distance from the first inclined surface 33a or the second inclined surface 33b located below the magnetic field generator 70.

[0096] Next, the shape of the magnetic field generator 70 will be described in more detail with reference to Figures 13 and 14. Figure 14 is an explanatory diagram for explaining the shape of the magnetic field generator 70. The magnetic field generator 70 has a first end Ed1 and a second end Ed2 located at both ends of the magnetic field generator 70 in a direction parallel to the Y direction. The first end Ed1 is located at the position where the top surface 70b and the side surface 70c of the magnetic field generator 70 intersect. The second end Ed2 is located at the position where the top surface 70b and the side surface 70d of the magnetic field generator 70 intersect. The top surface 70b connects the first end Ed1 and the second end Ed2.

[0097] At least one of the first end Ed1 and the second end Ed2 is located on the first inclined surface 33a or the second inclined surface 33b. In this embodiment, the first end Ed1 is located on the first inclined surface 33a or the second inclined surface 33b. The second end Ed2 may be located on the first inclined surface 33a or the second inclined surface 33b, or may be located on the flat surface 33d. In this embodiment, the second end Ed2 is located on the first inclined surface 33a or the second inclined surface 33b.

[0098] The first end Ed1 is located farther than the second end Ed2 from the reference plane, i.e., the upper surface 31a of the substrate 31. In other words, the distance from the upper surface 31a of the substrate 31 to the first end Ed1 is greater than the distance from the upper surface 31a of the substrate 31 to the second end Ed2.

[0099] Here, of the magnetic field generator 70, a portion including the first end Ed1, part of the lower surface 70a, part of the upper surface 70b, and the side surface 70c is referred to as a first portion 701, a portion including the second end Ed2, another part of the lower surface 70a, another part of the upper surface 70b, and the side surface 70d is referred to as a second portion 702, and a portion located between the first portion 701 and the second portion 702 is referred to as a third portion 703. In Fig. 14, the boundary between the first portion 701 and the third portion 703 and the boundary between the second portion 702 and the third portion 703 are respectively indicated by dashed lines.

[0100] The magnetic field generator 70 has a thickness T, which is the dimension perpendicular to the top surface 70b. In FIG. 14, the thickness T in the first portion 701 is represented by the symbol T1, the thickness T in the second portion 702 by the symbol T2, and the thickness T in the third portion 703 by the symbol T3. The thicknesses T1 and T2 may be the maximum thickness T in the first portion 701 and the second portion 702, or the average thickness T in the first portion 701 and the second portion 702, respectively. The thickness T3 may be the maximum thickness T in the third portion 703, the average thickness T in the third portion 703, or the thickness T at an arbitrary position P on the top surface 70b belonging to the third portion 703. The arbitrary position P is closer to the reference plane, i.e., the top surface 31a of the substrate 31, than the first end Ed1 and is farther from the reference plane, i.e., the top surface 31a of the substrate 31, than the second end Ed2. In the following description, it is assumed that film thicknesses T1 and T2 are the maximum film thicknesses T in the first portion 701 and the second portion 702, respectively, and film thickness T3 is the film thickness T at an arbitrary position P.

[0101] In the YZ cross section intersecting the magnetic field generator 70, the thickness T1 is greater than the thickness T2. In addition, in the YZ cross section, the thickness T3 is smaller than the thickness T1 and greater than the thickness T2. The thickness T3 may decrease from the first portion 701 toward the second portion 702.

[0102] In this embodiment, the top surface 70b is inclined with respect to the top surface 31a of the substrate 31. Here, the angle that the top surface 70b forms with respect to the top surface 31a of the substrate 31 is represented by the symbol θ. The angle θ is assumed to be equal to or greater than 0° and equal to or less than 90°. Furthermore, the angle θ at the first end Ed1 is represented by the symbol θ1, the angle θ at the second end Ed2 is represented by the symbol θ2, and the angle θ at any position P on the top surface 70b excluding the first end Ed1 and the second end Ed2 is represented by the symbol θp.

[0103] In the YZ cross section intersecting the magnetic field generator 70, the angle θ1 is smaller than the angle θ2. The angle θ1 may be, for example, within a range of 0° to 40°, as long as the requirement that the angle θ1 is smaller than the angle θ2 is satisfied. The angle θ2 may be, for example, within a range of 20° to 60°, as long as the requirement that the angle θ1 is smaller than the angle θ2 is satisfied.

[0104] In addition, in the YZ cross section, the angle θp is greater than the angle θ1 and smaller than the angle θ2. The angle θp may increase from the first end Ed1 toward the second end Ed2.

[0105] In this embodiment, the angle that the opposing surface 33c forms with respect to the upper surface 31a of the substrate 31 at any position on the opposing surface 33c varies depending on the distance from the upper surface 31a of the substrate 31 to the any position. Here, the angle that the opposing surface 33c forms with respect to the upper surface 31a of the substrate 31 is referred to as the inclination angle and is represented by the symbol φ. The inclination angle φ is assumed to be between 0° and 90°. The inclination angle φ at the position on the opposing surface 33c closest to the first end Ed1 is represented by the symbol φ1, the inclination angle φ at the position on the opposing surface 33c closest to the second end Ed2 is represented by the symbol φ2, and the inclination angle φ at the position on the opposing surface 33c closest to any position P on the upper surface 70b excluding the first end Ed1 and the second end Ed2 is represented by the symbol φp.

[0106] In the YZ cross section intersecting the magnetic field generator 70, the tilt angle φ1 is smaller than the tilt angle φ2. The tilt angle φ1 may be, for example, within a range of 0° to 40°, as long as the requirement that the tilt angle φ1 is smaller than the tilt angle φ2 is satisfied. The tilt angle φ2 may be, for example, within a range of 20° to 60°, as long as the requirement that the tilt angle φ1 is smaller than the tilt angle φ2 is satisfied.

[0107] In addition, in the YZ cross section, the inclination angle φp is greater than the inclination angle φ1 and smaller than the inclination angle φ2. The inclination angle φp may increase from the first end Ed1 to the second end Ed2.

[0108] Next, the positional relationship between the magnetic field generator 70 and the MR element 50 will be described with reference to Fig. 9 and Fig. 15. Fig. 15 is an explanatory diagram for explaining the positional relationship between the magnetic field generator 70 and the MR element 50. Fig. 15 schematically shows the positional relationship between the magnetic field generator 70 and the MR element 50 when viewed from the X direction. For convenience, Fig. 15 exaggerates the size of the magnetic field generator 70 compared to the MR element 50.

[0109] At least a portion of the first MR element 50A is arranged to overlap the first magnetic field generator 70A when viewed from the X direction. At least a portion of the second MR element 50B is arranged to overlap the second magnetic field generator 70B when viewed from the X direction.

[0110] The MR element 50 has a third end Ed3 and a fourth end Ed4 located at both ends of the MR element 50 in a direction parallel to the Y direction. The third end Ed3 is located at a position where the top surface 50b and the side surface 50c of the MR element 50 intersect. The fourth end Ed4 is located at a position where the top surface 50b and the side surface 50d of the MR element 50 intersect. The top surface 50b connects the third end Ed3 and the fourth end Ed4. The third end Ed3 and the fourth end Ed4 are located on the first inclined surface 33a or the second inclined surface 33b.

[0111] The third end Ed3 is located farther from the reference plane, i.e., the upper surface 31a of the substrate 31, than the fourth end Ed4. That is, the distance from the upper surface 31a of the substrate 31 to the third end Ed3 is greater than the distance from the upper surface 31a of the substrate 31 to the fourth end Ed4.

[0112] The MR element 50 is arranged so that the distance between the first end Ed1 of the magnetic field generator 70 and the third end Ed3 of the MR element 50 in the direction parallel to the Y direction is smaller than the distance between the second end Ed2 of the magnetic field generator 70 and the fourth end Ed4 of the MR element 50 in the direction parallel to the Y direction. In particular, in this embodiment, the first MR element 50A is arranged so that the distance between the first end Ed1 of the first magnetic field generator 70A and the third end Ed3 of the first MR element 50A in the direction parallel to the Y direction is smaller than the distance between the second end Ed2 of the first magnetic field generator 70A and the fourth end Ed4 of the first MR element 50A in the direction parallel to the Y direction. In addition, the second MR element 50B is arranged so that the distance between the first end Ed1 of the second magnetic field generator 70B and the third end Ed3 of the second MR element 50B in a direction parallel to the Y direction is smaller than the distance between the second end Ed2 of the second magnetic field generator 70B and the fourth end Ed4 of the second MR element 50B in a direction parallel to the Y direction.

[0113] Here, attention is focused on the first MR element 50A, the second MR element 50B, the first magnetic field generator 70A, and the second magnetic field generator 70B, which are arranged on one opposing surface 33c. In FIG. 15, symbol C1 indicates the center of the first magnetic field generator 70A in a direction parallel to the Y direction, symbol C2 indicates the center of the second magnetic field generator 70B in a direction parallel to the Y direction, symbol C3 indicates the center of the first MR element 50A in a direction parallel to the Y direction, and symbol C4 indicates the center of the second MR element 50B in a direction parallel to the Y direction. Note that the centers C1 and C2 may also be the centers in the stacking direction of the multiple layers constituting the magnetic field generator 70. Similarly, the centers C3 and C4 may also be the centers in the stacking direction of the multiple layers constituting the MR element 50.

[0114] As shown in Figure 15, the distance between the center C1 and the center C2 is different from the distance between the center C3 and the center C4. In the example shown in Figure 15, the distance between the center C1 and the center C2 is greater than the distance between the center C3 and the center C4.

[0115] Note that, when focusing on the first MR element 50A, the second MR element 50B, the first magnetic field generator 70A, and the second magnetic field generator 70B arranged on the two opposing surfaces 33c, the above-mentioned relationship in size of the gap is reversed. That is, when focusing on the first MR element 50A and the first magnetic field generator 70A arranged on the opposing surface 33c located on the -Y direction side and the second MR element 50B and the second magnetic field generator 70B arranged on the opposing surface 33c located on the Y direction side, the gap between centers C1 and C2 is smaller than the gap between centers C3 and C4.

[0116] Next, a brief description will be given of a method for manufacturing the magnetic sensor 1 according to this embodiment. The process for manufacturing the magnetic sensor 1 includes a step of forming an insulating layer 33 as a support member, a step of forming a plurality of MR elements 50, and a step of forming a plurality of magnetic field generators 70. The plurality of MR elements 50 and the plurality of magnetic field generators 70 are formed on the insulating layer 33.

[0117] First, a description will be given of a process for forming the plurality of MR elements 50. In the process for forming the plurality of MR elements 50, first, a plurality of initial MR elements are formed, which will later become the plurality of MR elements 50. Each of the plurality of initial MR elements includes an initial magnetization fixed layer, which will later become the magnetization fixed layer 52, an antiferromagnetic layer 51, a gap layer 53, and a free layer 54.

[0118] Next, the magnetization direction of the initial magnetization pinned layer is fixed using laser light and an external magnetic field containing a component in a predetermined direction. For example, for the initial MR elements that will later become the first MR elements 50A that constitute the resistor units R11 and R13 of the first detection circuit 10, laser light is irradiated onto the initial MR elements while applying an external magnetic field in the Y direction. The laser light is irradiated so that the temperature of the initial MR elements irradiated with the laser light becomes equal to or higher than the blocking temperature of the antiferromagnetic layer 51. The temperature of the initial MR elements can be adjusted, for example, by the intensity and pulse width of the laser light.

[0119] The external magnetic field in the Y direction can be divided into a component in the U direction and a component in a direction perpendicular to the U direction. After irradiation with laser light, when the temperature of the initial MR elements drops below the blocking temperature, the magnetization direction of the initial magnetization fixed layer is fixed in the U direction. As a result, the initial magnetization fixed layer becomes the magnetization fixed layer 52, and the initial MR element becomes the first MR element 50A.

[0120] Furthermore, in the initial MR elements that will later become the first MR elements 50A that constitute the resistor units R12, R14 of the first detection circuit 10, the magnetization direction of the initial magnetization pinned layer of each of the initial MR elements can be pinned to the -U direction by using an external magnetic field in the -Y direction. In this manner, the first MR elements 50A are formed. The magnetization direction of the magnetization pinned layer 52 of each of the second MR elements 50B that constitute each of the resistor units R21 to R24 of the second detection circuit 20 is also pinned in the same manner as the magnetization pinned layer 52 of each of the first MR elements 50A.

[0121] The MR element 50 is completed by fixing the direction of magnetization of the magnetization fixed layer 52 and then patterning the laminated film by etching so that the side surfaces of the MR element 50 are formed in the laminated film. Note that a step of fixing the direction of magnetization of the initial magnetization fixed layer may be performed after forming the side surfaces of the MR element 50 in the laminated film. Next, an insulating layer 35 is formed around the plurality of first MR elements 50A and the plurality of second MR elements 50B.

[0122] Next, a process for forming the plurality of magnetic field generators 70 will be described with reference to Fig. 16 and Fig. 17. Fig. 16 and Fig. 17 show a stack in the process of manufacturing the magnetic sensor 1. The process for forming the plurality of magnetic field generators 70 may be performed after the plurality of MR elements 50 and the insulating layer 35 are formed.

[0123] 16, in the step of forming the plurality of magnetic field generators 70, a plurality of photoresist masks 61 are first formed on the MR element 50 and the insulating layer 35. Next, using the plurality of photoresist masks 61 as etching masks, the insulating layer 35 is etched by, for example, ion milling so that a plurality of grooves are formed in the insulating layer 35. The plurality of grooves have shapes corresponding to the plurality of magnetic field generators 70.

[0124] 17, while leaving the photoresist masks 61, a plurality of initial magnetic field generators 70P, which will later become the magnetic field generators 70, are formed so that they are housed in the grooves. Each of the initial magnetic field generators 70P includes at least an initial ferromagnetic portion, which will later become the ferromagnetic portion 73, and an antiferromagnetic portion 72. Next, the photoresist masks 61 are removed.

[0125] Next, the magnetization direction of the initial ferromagnetic portion is fixed using a laser beam and an external magnetic field containing a component in a predetermined direction. The method for fixing the magnetization direction of the initial ferromagnetic portion is the same as the method for fixing the magnetization direction of the initial magnetization fixed layer. That is, while applying an external magnetic field, each of the initial magnetic field generators 70P is irradiated with a laser beam. The laser beam is irradiated so that the temperature of the initial magnetic field generators 70P irradiated with the laser beam is equal to or higher than the blocking temperature of the antiferromagnetic portion 72. The temperature of the initial magnetic field generators 70P can be adjusted, for example, by the temperature and pulse width of the laser beam. After irradiation with the laser beam, when the temperature of the initial magnetic field generators 70P drops below the blocking temperature, the magnetization direction of the initial ferromagnetic portion is fixed in the predetermined direction. As a result, the initial ferromagnetic portion becomes a ferromagnetic portion 73, and the initial magnetic field generators 70P become a magnetic field generators 70.

[0126] For example, in the initial magnetic field generators 70P that will later become the first magnetic field generators 70A that apply a bias magnetic field to the first MR elements 50A that constitute the resistors R11 and R12 of the first detection circuit 10, the magnetization direction of the initial ferromagnetic portions is fixed in the X direction by applying an external magnetic field in the X direction to the initial magnetic field generators 70P and irradiating the initial ferromagnetic portions with laser light. As a result, the initial ferromagnetic portions become ferromagnetic portions 73, and the initial magnetic field generators 70P become the first magnetic field generators 70A. Furthermore, in the initial magnetic field generators 70P that will later become the first magnetic field generators 70A that apply a bias magnetic field to the first MR elements 50A that constitute the resistors R13 and R14 of the first detection circuit 10, the magnetization direction of each initial ferromagnetic portion of the initial magnetic field generators 70P can be fixed in the −X direction by applying an external magnetic field in the −X direction. In this way, the first magnetic field generators 70A are formed. The plurality of second magnetic field generators 70B are formed in the same manner as the plurality of first magnetic field generators 70A.

[0127] The intensity of the laser light used to fix the magnetization direction of the initial ferromagnetic portion may be smaller than the intensity of the laser light used to fix the magnetization direction of the initial magnetization fixed layer. Furthermore, the intensity of the laser light used to fix the magnetization direction of the initial ferromagnetic portion is preferably an intensity that suppresses a change in the magnetoresistance change rate, which is the ratio of magnetoresistance change to the resistance of the MR element 50.

[0128] Next, the effects of the magnetic sensor 1 according to this embodiment will be described. In this embodiment, a plurality of initial magnetic field generators 70P are formed on the first inclined surface 33a and the second inclined surface 33b. The thickness of the initial magnetic field generators 70P (the dimension in the direction perpendicular to the first inclined surface 33a or the second inclined surface 33b) decreases as the inclination angle φ increases. That is, in this embodiment, the first and second inclined surfaces 33a and 33b cause the film thickness T2 of the second portion 702 to be smaller than the film thickness T1 of the first portion 701.

[0129] Furthermore, in this embodiment, as described above, the multiple initial magnetic field generators 70P are formed while leaving the multiple photoresist masks 61. Generally, the thickness (dimension in the direction parallel to the Z direction) of the photoresist mask 61 located on the flat surface 33d is greater than the thickness of the photoresist mask 61 located on the opposing surface 33c. In this case, due to the influence of the shadow of the photoresist mask 61 located on the flat surface 33d, the thickness of the portion of the initial magnetic field generator 70P formed near the photoresist mask 61 located on the flat surface 33d is smaller than the thickness of the portion of the initial magnetic field generator 70P formed near the photoresist mask 61 located on the opposing surface 33c. That is, in this embodiment, the photoresist mask 61 causes the film thickness T2 of the second portion 702 to be smaller than the film thickness T1 of the first portion 701.

[0130] In contrast, in this embodiment, the MR element 50 is disposed so that the distance between the first end Ed1 of the magnetic field generator 70 and the third end Ed3 of the MR element 50 in the direction parallel to the Y direction is smaller than the distance between the second end Ed2 of the magnetic field generator 70 and the fourth end Ed4 of the MR element 50 in the direction parallel to the Y direction. In the YZ cross section intersecting with the magnetic field generator 70, the film thickness T1 of the first portion 701 of the magnetic field generator 70 is larger than the film thickness T2 of the second portion 702 of the magnetic field generator 70. That is, in this embodiment, the MR element 50 is disposed so as to be closer to the first portion 701 of the magnetic field generator 70, which has the larger film thickness T. As a result, according to this embodiment, the strength of the bias magnetic field applied to the MR element 50 can be increased compared to when the MR element 50 is positioned so as to be close to the second portion 702 of the magnetic field generator 70 having a smaller film thickness T, or when the MR element 50 is positioned so that the central portion of the MR element 50 in a direction parallel to the Y direction overlaps with the central portion of the magnetic field generator 70 in a direction parallel to the Y direction.

[0131] [Variations] Next, first to seventh modified examples of the magnetic sensor 1 according to the present embodiment will be described. First, the first modified example will be described with reference to FIG. 18. FIG. 18 is an explanatory diagram for explaining the shape of the magnetic field generator 70 in the first modified example of the magnetic sensor 1. In the first modified example, each of the multiple first inclined surfaces 33a and the multiple second inclined surfaces 33b included in the multiple facing surfaces 33c is formed in a flat or substantially flat shape. Although not shown, the shape of the facing surface 33c in a cross section parallel to the YZ plane is triangular. The overall shape of each of the multiple facing surfaces 33c is a triangular roof shape created by moving the triangular shape along a direction parallel to the X direction.

[0132] In the first modification, the lower surface 70a and the upper surface 70b of the magnetic field generator 70 are each formed to be flat or substantially flat. The first modification also satisfies the requirements for the film thicknesses T1, T2, and T3 described with reference to FIG.

[0133] Next, a second modified example will be described with reference to Fig. 19. Fig. 19 is a plan view showing an MR element 50, a magnetic field generator 70, a lower electrode 41, and an upper electrode 42 in the second modified example. In the second modified example, an insulating film formed along the side surface of the MR element 50 is interposed between the MR element 50 and the magnetic field generator 70, instead of the insulating layer 35. When viewed from the Z direction, a portion of the magnetic field generator 70 overlaps a portion of the MR element 50.

[0134] Next, a third modified example will be described with reference to FIG. 20 . FIG. 20 is a side view showing a magnetic field generator 70 in the third modified example. In the third modified example, the magnetic field generator 70 further includes an antiferromagnetic portion 75. The antiferromagnetic portion 75 is disposed between the ferromagnetic portion 73 and the cap layer 74. The antiferromagnetic portion 75 is made of an antiferromagnetic material such as IrMn or PtMn. In the magnetic field generator 70 of the third modified example, the direction of magnetization of the ferromagnetic portion 73 is determined by exchange coupling between the antiferromagnetic portions 72 and 75 and the ferromagnetic portion 73.

[0135] Next, a fourth modified example will be described with reference to FIG. 21. FIG. 21 is a side view showing a magnetic field generator 70 in the fourth modified example. In the fourth modified example, the ferromagnetic portion 73 of the magnetic field generator 70 includes a ferromagnetic layer 731 and a ferromagnetic layer 732. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic layer 731, the ferromagnetic layer 732, and the cap layer 74 are stacked in this order. The ferromagnetic layers 731 and 732 are each made of a ferromagnetic material containing one or more elements selected from the group consisting of Co, Fe, and Ni. In the fourth modified example, the ferromagnetic layers 731 and 732 each have magnetization in the same direction.

[0136] In a fourth modification, the ferromagnetic layer 731 may be formed of a ferromagnetic material capable of increasing the exchange coupling energy with the antiferromagnetic part 72, and the ferromagnetic layer 732 may be formed of a ferromagnetic material having a higher saturation magnetic flux density than the ferromagnetic material constituting the ferromagnetic layer 731. In this case, the exchange coupling energy between the ferromagnetic part 73 consisting of the ferromagnetic layers 731 and 732 and the antiferromagnetic part 72 can be increased, while the strength of the bias magnetic field generated by the magnetic field generator 70 can be increased and the magnetic field generator 70 can be made smaller. An example of the ferromagnetic layer 731 is Co. 70 Fe 30 Examples of the ferromagnetic layer 732 include a Co 30 Fe 70 The Co layer is 70 Fe 30 represents an alloy consisting of 70 atomic % Co and 30 atomic % Fe, and Co 30 Fe 70 represents an alloy consisting of 30 atomic % Co and 70 atomic % Fe.

[0137] Next, a fifth modified example will be described with reference to FIG. 22. FIG. 22 is a side view showing a magnetic field generator 70 according to the fifth modified example. In the fifth modified example, the ferromagnetic portion 73 of the magnetic field generator 70 includes a ferromagnetic layer 731 and a ferromagnetic layer 732. The magnetic field generator 70 further includes a nonmagnetic layer 76. The buffer layer 71, the antiferromagnetic portion 72, the ferromagnetic layer 731, the nonmagnetic layer 76, the ferromagnetic layer 732, and the cap layer 74 are stacked in this order. The ferromagnetic layers 731 and 732 are each formed of a ferromagnetic material containing one or more elements selected from the group consisting of Co, Fe, and Ni. The ferromagnetic layers 731 and 732 may be formed of the same ferromagnetic material or different ferromagnetic materials. The nonmagnetic layer 76 is formed of a nonmagnetic metal material, such as Ru.

[0138] In a fifth modification, the ferromagnetic layers 731 and 732 may be ferromagnetically exchange-coupled via the nonmagnetic layer 76 so that their magnetization directions are the same. In this case, the ferromagnetic layers 731 and 732 have magnetizations in the same direction. The thickness of the nonmagnetic layer 76 is set so that the exchange coupling between the ferromagnetic layers 731 and 732 is not lost. By providing the nonmagnetic layer 76, it is possible to adjust the coercive force of the ferromagnetic part 73 and the surface roughness of the base of the ferromagnetic layer 732.

[0139] Alternatively, the ferromagnetic layer 731 and the ferromagnetic layer 732 may be antiferromagnetically exchange-coupled via the nonmagnetic layer 76 by RKKY interaction. In this case, the magnetization direction of the ferromagnetic layer 731 and the magnetization direction of the ferromagnetic layer 732 are opposite to each other. The magnetization direction of the ferromagnetic portion 73 is the same as the magnetization direction of the ferromagnetic layer 731. When the ferromagnetic layer 731 and the ferromagnetic layer 732 are antiferromagnetically exchange-coupled, the net moment of the ferromagnetic portion 73 is reduced. Therefore, the Zeeman energy, which is the energy generated when an external magnetic field acts on the magnetic moment, is reduced in the ferromagnetic portion 73. As a result, even when an external magnetic field is applied, the magnetization direction of the ferromagnetic portion 73 is less likely to tilt than when the Zeeman energy is large.

[0140] The thickness of the nonmagnetic layer 76 is set so that the magnetization directions of the ferromagnetic layers 731 and 732 due to the RKKY interaction are in the expected directions, and the strength of the exchange coupling due to the RKKY interaction is the expected strength.

[0141] Next, a sixth modified example will be described with reference to Fig. 23. Fig. 23 is a side view showing a magnetic field generator 70 in the sixth modified example. In the sixth modified example, the buffer layer 71, antiferromagnetic portion 72, ferromagnetic portion 73, and cap layer 74 of the magnetic field generator 70 are stacked in this order: buffer layer 71, ferromagnetic portion 73, antiferromagnetic portion 72, and cap layer 74.

[0142] Next, a seventh modified example will be described with reference to Fig. 24. Fig. 24 is a side view showing a magnetic field generator 70 in the seventh modified example. In the seventh modified example, the magnetic field generator 70 includes a magnet 77 made of a hard magnetic material instead of the antiferromagnetic portion 72 and the ferromagnetic portion 73. The magnetic field generator 70 may or may not include a buffer layer 71 and a cap layer 74.

[0143] [Second embodiment] Next, a second embodiment of the present invention will be described with reference to Fig. 25. Fig. 25 is a cross-sectional view showing a part of a magnetic sensor in this embodiment. Note that Fig. 25 shows a cross section parallel to the YZ plane and intersecting with the second magnetic field generator 70B. Even when the description is given with reference to Fig. 25 below, features common to the first magnetic field generator 70A and the second magnetic field generator 70B will be described as features of the magnetic field generator 70.

[0144] In this embodiment, the side surface 70d of the magnetic field generator 70 is located on the flat surface 33d of the insulating layer 33. The second end portion Ed2 of the magnetic field generator 70 is also located on the flat surface 33d. In this embodiment, a portion of the lower electrode 41 may be disposed on the flat surface 33d.

[0145] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0146] [Third embodiment] Next, a third embodiment of the present invention will be described. The magnetic sensor according to this embodiment differs from the magnetic sensor 1 according to the first embodiment in the following respects. The first detection circuit 10 (see FIG. 4) according to this embodiment may be configured to detect a component of a target magnetic field parallel to the X direction and generate at least one first detection signal corresponding to this component. The magnetization direction of the magnetization fixed layer 52 in each of the resistor units R11 and R13 of the first detection circuit 10 may be the X direction. The magnetization direction of the magnetization fixed layer 52 in each of the resistor units R12 and R14 of the first detection circuit 10 may be the −X direction. Furthermore, the free layer 54 of each of the multiple first MR elements 50A of the first detection circuit 10 may have shape anisotropy such that the magnetization easy axis direction is parallel to the Y direction. The magnetization direction of the free layer in each of the resistor units R11 and R12 may be the Y direction when no target magnetic field is applied to the first MR element 50A. In the above case, the magnetization direction of the free layer in each of the resistor portions R13 and R14 may be the −Y direction.

[0147] In the resistor units R11 and R12, a bias magnetic field in the Y direction may be applied to the plurality of first MR elements 50A by the plurality of first magnetic field generators 70A. In the resistor units R13 and R14, a bias magnetic field in the -Y direction may be applied to the plurality of first MR elements 50A by the plurality of first magnetic field generators 70A.

[0148] The second detection circuit 20 (see FIG. 5) in this embodiment may be configured to detect a component of the target magnetic field parallel to the Y direction and generate at least one second detection signal corresponding to this component. The magnetization direction of the magnetization fixed layer 52 in each of the resistor units R21 and R23 of the second detection circuit 20 may be the Y direction. The magnetization direction of the magnetization fixed layer 52 in each of the resistor units R22 and R24 of the second detection circuit 20 may be the −Y direction. Furthermore, the free layer 54 of each of the multiple second MR elements 50B of the second detection circuit 20 may have shape anisotropy in which the magnetization easy axis direction is parallel to the X direction. The magnetization direction of the free layer in each of the resistor units R21 and R22 may be the X direction when no target magnetic field is applied to the second MR element 50B. In the above case, the magnetization direction of the free layer in each of the resistor units R23 and R24 may be the −X direction.

[0149] In the resistor units R21 and R22, a bias magnetic field in the X direction may be applied to the second MR elements 50B by the second magnetic field generators 70B. In the resistor units R23 and R24, a bias magnetic field in the −X direction may be applied to the second MR elements 50B by the second magnetic field generators 70B.

[0150] The processor 2 (see FIG. 3) may generate a detection value corresponding to a component of the target magnetic field in a direction parallel to the X direction based on at least one first detection signal, and may generate a detection value corresponding to a component of the target magnetic field in a direction parallel to the Y direction based on at least one second detection signal.

[0151] In this embodiment, the insulating layer 33 in the first embodiment is not provided. A plurality of lower electrodes 41A and a plurality of lower electrodes 41B (see FIGS. 7 and 8) are disposed on an insulating layer 32. The upper surface of the insulating layer 32 is a plane parallel to the upper surface 31a of the substrate 31. Each of the plurality of MR elements 50 is formed so that the lower surface 50a and the upper surface 50b of the MR element 50 are parallel to the upper surface 31a of the substrate 31.

[0152] Next, the shape and positional relationship between the first magnetic field generator 70A and the first MR element 50A in this embodiment will be described with reference to FIG. 26. FIG. 26 is an explanatory diagram for explaining the shape and positional relationship between the first magnetic field generator 70A and the first MR element 50A. FIG. 26 schematically shows the positional relationship between the first magnetic field generator 70A and the first MR element 50A when viewed from the X direction. For convenience, FIG. 26 exaggerates the size of the first magnetic field generator 70A compared to the first MR element 50A.

[0153] Fig. 26 shows two first magnetic field generators 70A and two first MR elements 50A. In Fig. 26, the two first magnetic field generators 70A are arranged so that the side surface 70c of the first magnetic field generator 70A on the right side in Fig. 26 faces the side surface 70d of the first magnetic field generator 70A on the left side in Fig. 26.

[0154] In this embodiment, the lower surface 70a and the upper surface 70b of the first magnetic field generator 70A are each formed flat or approximately flat. The requirements for the film thicknesses T1, T2, and T3 described with reference to FIG. 14 in the first embodiment are also satisfied in this embodiment. Furthermore, the first end Ed1 of the first magnetic field generator 70 is located farther from the reference plane, i.e., the upper surface 31a of the substrate 31, than the second end Ed2 of the first magnetic field generator 70. That is, the distance from the upper surface 31a of the substrate 31 to the first end Ed1 is greater than the distance from the upper surface 31a of the substrate 31 to the second end Ed2.

[0155] The distance from the upper surface 31a of the substrate 31 to the third end Ed3 of the first MR element 50A and the distance from the upper surface 31a of the substrate 31 to the fourth end Ed4 of the first MR element 50A are the same or approximately the same.

[0156] In Fig. 26, symbol C11 indicates the center in the direction parallel to the Y direction of the first magnetic field generator 70A on the right side in Fig. 26, symbol C12 indicates the center in the direction parallel to the Y direction of the first magnetic field generator 70A on the left side in Fig. 26, symbol C13 indicates the center in the direction parallel to the Y direction of the first MR element 50A on the right side in Fig. 26, and symbol C14 on the left side in Fig. 26 indicates the center in the direction parallel to the Y direction of the first MR element 50A. As shown in Fig. 26, the distance between centers C11 and C12 is larger than the distance between centers C13 and C14.

[0157] The above description of the shape and positional relationship also applies to the second magnetic field generator 70B and the second MR element 50B. If the first magnetic field generator 70A, the first MR element 50A, the X direction, and the Y direction in the above description of the shape and positional relationship are replaced with the second magnetic field generator 70B, the second MR element 50B, the Y direction, and the X direction, respectively, the description of the shape and positional relationship between the second magnetic field generator 70B and the second MR element 50B will be correct.

[0158] [Variations] Next, a modified example of the magnetic sensor 101 according to the present embodiment will be described. Fig. 27 is an explanatory diagram for explaining the positional relationship between the first magnetic field generator 70A and the first MR element 50A in the modified example. Fig. 27, like Fig. 26, schematically shows the positional relationship between the first magnetic field generator 70A and the first MR element 50A when viewed from the X direction.

[0159] In this modification, the two first magnetic field generators 70A are arranged so that the side surface 70d of the first magnetic field generator 70A on the right side in Fig. 27 faces the side surface 70d of the first magnetic field generator 70A on the left side in Fig. 27. As shown in Fig. 27, the distance between centers C11 and C12 is smaller than the distance between centers C13 and C14.

[0160] The above description of the positional relationship also applies to the second magnetic field generator 70B and the second MR element 50B. If the first magnetic field generator 70A in the above description of the positional relationship is replaced with the second magnetic field generator 70B, the positional relationship between the second magnetic field generator 70B and the second MR element 50B will be obtained.

[0161] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0162] The present invention is not limited to the above-described embodiments and various modifications are possible. For example, the magnetic sensor 1 of the present invention may further include a third detection circuit configured to detect a component of the target magnetic field parallel to the X direction and generate at least one third detection signal corresponding to this component. In this case, the processor 2 may be configured to generate a detection value corresponding to the component of the target magnetic field parallel to the X direction based on the at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 10 and 20, or may be included on a chip separate from the first and second detection circuits 10 and 20.

[0163] The MR element 50 and the magnetic field generator 70 of the present invention may be aligned in a direction parallel to the Z direction. In this case, the MR element 50 may be arranged so that at least a portion of the MR element 50 overlaps with the magnetic field generator 70 when viewed from the Z direction. In this case, the direction of the bias magnetic field applied to the MR element 50 may be opposite to the direction of magnetization of the ferromagnetic part 73 of the magnetic field generator 70.

[0164] As described above, a magnetic sensor according to a first aspect of the present invention includes at least one magnetoresistive element, a ferromagnetic portion made of a ferromagnetic material, and an antiferromagnetic portion made of an antiferromagnetic material exchange-coupled with the ferromagnetic portion, and at least one magnetic field generator configured to generate a bias magnetic field applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator when viewed from the first direction. The at least one magnetic field generator has a first end and a second end located at opposite ends in a second direction intersecting the first direction, a first surface connecting the first end and the second end, a film thickness that is a dimension perpendicular to the first surface, and includes a first portion including the first end and a second portion including the second end. In any cross section that intersects the at least one magnetic field generator and is perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion. At least one magnetoresistive element has a third end and a fourth end located at opposite ends in the second direction, and is arranged so that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

[0165] The magnetic sensor according to the first aspect of the present invention may further include a substrate having an upper surface and a support member disposed on the substrate. The at least one magnetoresistive element and the at least one magnetic field generator may be disposed on the support member. The first end may be located farther from the upper surface than the second end. The third end may be located farther from the upper surface than the fourth end.

[0166] The magnetic sensor according to the first aspect of the present invention may further include a substrate having an upper surface and a support member disposed on the substrate. The at least one magnetoresistive element and the at least one magnetic field generator may be disposed on the support member. The support member may have a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator. In any cross section, the inclination angle of the facing surface relative to the upper surface may be larger at a second position on the facing surface closest to the second end than at a first position on the facing surface closest to the first end.

[0167] The magnetic sensor according to the first aspect of the present invention may further include a substrate having an upper surface and a support member disposed on the substrate. The support member may support at least one magnetoresistive element and at least one magnetic field generator, and may have a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator. The facing surface may include a curved portion. At least one of the first end and the second end may be located on the curved portion.

[0168] In the magnetic sensor according to the first aspect of the present invention, at least one magnetic field generator may further include a third portion between the first and second portions, and the film thickness of the third portion may be smaller than that of the first portion or larger than that of the second portion in any cross section.

[0169] Furthermore, in the magnetic sensor of the first aspect of the present invention, the at least one magnetoresistive effect element may include a first magnetoresistive effect element and a second magnetoresistive effect element spaced apart in the second direction. The at least one magnetic field generator may include a first magnetic field generator and a second magnetic field generator spaced apart in the second direction. The first magnetoresistive effect element may be arranged such that at least a portion of the first magnetoresistive effect element overlaps the first magnetic field generator when viewed from the first direction. The second magnetoresistive effect element may be arranged such that at least a portion of the second magnetoresistive effect element overlaps the second magnetic field generator when viewed from the first direction. The distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction may be different from the distance between the center of the first magnetoresistive effect element in the second direction and the center of the second magnetoresistive effect element in the second direction.

[0170] A magnetic sensor according to a second aspect of the present invention includes a substrate having an upper surface, a support member disposed on the substrate, at least one magnetoresistive element disposed on the support member, and at least one magnetic field generator disposed on the support member, the magnetic field generator including a ferromagnetic portion made of a ferromagnetic material and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, the magnetic field generator configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator when viewed from the first direction. The at least one magnetic field generator has first and second ends located at opposite ends in a second direction intersecting the first direction. The at least one magnetoresistive element has third and fourth ends located at opposite ends in the second direction. The first end is located farther from the upper surface than the second end. The third end is located farther from the top surface than the fourth end, and the at least one magnetoresistive element is arranged such that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

[0171] In the magnetic sensor according to the second aspect of the present invention, at least one magnetic field generator may further have a first surface connecting the first end and the second end, may have a film thickness that is a dimension in a direction perpendicular to the first surface, and may include a first portion that includes the first end and a second portion that includes the second end. In any cross section that intersects the at least one magnetic field generator and is perpendicular to the first direction, the film thickness in the first portion may be larger than the film thickness in the second portion.

[0172] In the magnetic sensor according to the second aspect of the present invention, the support member may have a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator, and in any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the inclination angle of the facing surface relative to the top surface may be larger at a second position on the facing surface that is closest to the second end than at a first position on the facing surface that is closest to the first end.

[0173] In the magnetic sensor according to the second aspect of the present invention, the support member may have a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator. The facing surface may include a curved portion. At least one of the first end and the second end may be located on the curved portion.

[0174] In the magnetic sensor according to the second aspect of the present invention, at least one magnetic field generator may further have a first surface connecting the first end and the second end, and the center of the first surface in the second direction may be closer to the top surface than the first end and farther from the top surface than the second end.

[0175] In the magnetic sensor according to the second aspect of the present invention, the at least one magnetoresistive element may include a first magnetoresistive element and a second magnetoresistive element spaced apart in the second direction. The at least one magnetic field generator may include a first magnetic field generator and a second magnetic field generator spaced apart in the second direction. The first magnetoresistive element may be arranged such that at least a portion of the first magnetoresistive element overlaps the first magnetic field generator when viewed from the first direction. The second magnetoresistive element may be arranged such that at least a portion of the second magnetoresistive element overlaps the second magnetic field generator when viewed from the first direction. The distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction may be different from the distance between the center of the first magnetoresistive element in the second direction and the center of the second magnetoresistive element in the second direction.

[0176] A magnetic sensor according to a third aspect of the present invention includes a substrate having an upper surface, a support member disposed on the substrate, at least one magnetoresistive element disposed on the support member, and at least one magnetic field generator disposed on the support member, the magnetic field generator including a ferromagnetic portion made of a ferromagnetic material and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, the magnetic field generator configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element. The at least one magnetoresistive element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive element overlaps with the at least one magnetic field generator when viewed from the first direction. The support member has a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator. The at least one magnetic field generator has first and second ends located at opposite ends in a second direction intersecting the first direction. In any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the inclination angle of the facing surface with respect to the top surface is larger at a second position on the facing surface that is closest to the second end than at a first position that is closest to the first end. The at least one magnetoresistance effect element has a third end and a fourth end located at opposite ends in the second direction, and is arranged so that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

[0177] In the magnetic sensor according to the third aspect of the present invention, at least one magnetic field generator may further have a first surface connecting the first end and the second end, may have a film thickness that is a dimension perpendicular to the first surface, and may include a first portion that includes the first end and a second portion that includes the second end. In any cross section, the film thickness in the first portion may be greater than the film thickness in the second portion.

[0178] In the magnetic sensor according to the third aspect of the present invention, the first end may be located farther from the top surface than the second end, and the third end may be located farther from the top surface than the fourth end.

[0179] In the magnetic sensor according to the third aspect of the present invention, the facing surface may include a curved portion, and at least one of the first end and the second end may be on the curved portion.

[0180] In the magnetic sensor according to the third aspect of the present invention, at least one magnetic field generator may further have a first surface connecting the first end and the second end. In any cross section, the inclination angle may be smaller at the first position than at a third position on the opposing surface closest to the center of the first surface in the second direction, and may be larger at the second position than at the third position.

[0181] In the magnetic sensor according to the third aspect of the present invention, the at least one magnetoresistive element may include a first magnetoresistive element and a second magnetoresistive element spaced apart in the second direction. The at least one magnetic field generator may include a first magnetic field generator and a second magnetic field generator spaced apart in the second direction. The first magnetoresistive element may be arranged such that at least a portion of the first magnetoresistive element overlaps the first magnetic field generator when viewed from the first direction. The second magnetoresistive element may be arranged such that at least a portion of the second magnetoresistive element overlaps the second magnetic field generator when viewed from the first direction. The distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction may be different from the distance between the center of the first magnetoresistive element in the second direction and the center of the second magnetoresistive element in the second direction. [Explanation of symbols]

[0182] 1...magnetic sensor, 2...processor, 10...first detection circuit, 20...second detection circuit, 31...substrate, 32-37...insulating layer, 33a...first inclined surface, 33b...second inclined surface, 33c...opposing surface, 33d...flat surface, 41, 41A, 41B...lower electrode, 42, 42A, 42B...upper electrode, 50...MR element, 50A...first MR element, 50B...second MR element, 50a...lower surface, 50b...upper surface, 50d-50f...side surface, 51...antiferromagnetic layer, 52...magnetization fixed layer, 53...gap layer, 54...free layer, 70...magnetic field generator, 70A...first magnetic field generator, 70b...second magnetic field generator, 70a...bottom surface, 70b...top surface, 70c to 70f...side surfaces, 71...buffer layer, 72...antiferromagnetic portion, 73...ferromagnetic portion, 74...cap layer, 100...magnetic sensor device, E11, E21...first output terminal, E12, E22...second output terminal, G1, G2...ground terminal, R11 to R14, R21 to R24...resistance portions, V1, V2...power supply terminal.

Claims

1. at least one magnetoresistive element; a ferromagnetic portion made of a ferromagnetic material, and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion; and at least one magnetic field generator configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element; the at least one magnetoresistive effect element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive effect element overlaps with the at least one magnetic field generator when viewed from the first direction; the at least one magnetic field generator has a first end and a second end located at opposite ends in a second direction intersecting the first direction, a first surface connecting the first end and the second end, a film thickness that is a dimension in a direction perpendicular to the first surface, and includes a first portion including the first end and a second portion including the second end; In any cross section that intersects with the at least one magnetic field generator and is perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion; A magnetic sensor characterized in that the at least one magnetoresistive effect element has a third end and a fourth end located at both ends in the second direction, and is arranged so that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

2. further comprising: a substrate having an upper surface; a support member disposed on the substrate; the at least one magnetoresistive element and the at least one magnetic field generator are disposed on the support member; the first end is located farther from the top surface than the second end; 2. The magnetic sensor according to claim 1, wherein the third end is located farther from the top surface than the fourth end.

3. further comprising: a substrate having an upper surface; a support member disposed on the substrate; the at least one magnetoresistive element and the at least one magnetic field generator are disposed on the support member; the support member has a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator, 2. The magnetic sensor according to claim 1, characterized in that, in any cross section, the inclination angle of the opposing surface relative to the upper surface is larger at a second position on the opposing surface that is closest to the second end than at a first position on the opposing surface that is closest to the first end.

4. further comprising: a substrate having an upper surface; a support member disposed on the substrate; the support member supports the at least one magnetoresistive element and the at least one magnetic field generator, and has a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator; the opposing surface includes a curved surface portion, 2. The magnetic sensor according to claim 1, wherein at least one of the first end and the second end is on the curved surface portion.

5. the at least one magnetic field generator further includes a third portion between the first portion and the second portion; 2. The magnetic sensor according to claim 1, wherein, in any cross section, the film thickness in the third portion is smaller than the film thickness in the first portion and larger than the film thickness in the second portion.

6. the at least one magnetoresistive element includes a first magnetoresistive element and a second magnetoresistive element spaced apart in the second direction; the at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator spaced apart in the second direction; the first magnetoresistive element is arranged such that at least a portion of the first magnetoresistive element overlaps with the first magnetic field generator when viewed from the first direction; the second magnetoresistive element is arranged such that at least a portion of the second magnetoresistive element overlaps with the second magnetic field generator when viewed from the first direction; 2. The magnetic sensor according to claim 1, wherein the distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction is different from the distance between the center of the first magnetoresistive element in the second direction and the center of the second magnetoresistive element in the second direction.

7. a substrate having a top surface; a support member disposed on the substrate; at least one magnetoresistive element disposed on the support member; at least one magnetic field generator disposed on the support member, the magnetic field generator including a ferromagnetic portion made of a ferromagnetic material and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, the magnetic field generator being configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element; the at least one magnetoresistive effect element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive effect element overlaps with the at least one magnetic field generator when viewed from the first direction; the at least one magnetic field generator has a first end and a second end located at opposite ends in a second direction intersecting the first direction; the at least one magnetoresistive element has a third end and a fourth end located at opposite ends in the second direction; the first end is located farther from the top surface than the second end; the third end is located farther from the top surface than the fourth end; A magnetic sensor characterized in that the at least one magnetoresistive effect element is arranged so that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

8. the at least one magnetic field generator further has a first surface connecting the first end and the second end, a film thickness that is a dimension in a direction perpendicular to the first surface, and includes a first portion that includes the first end and a second portion that includes the second end; 8. The magnetic sensor according to claim 7, wherein in any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the film thickness in the first portion is greater than the film thickness in the second portion.

9. the support member has a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator, 8. The magnetic sensor according to claim 7, wherein, in any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, the inclination angle of the opposing surface relative to the upper surface is larger at a second position on the opposing surface that is closest to the second end than at a first position on the opposing surface that is closest to the first end.

10. the support member has a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator, the opposing surface includes a curved surface portion, 8. The magnetic sensor according to claim 7, wherein at least one of the first end and the second end is on the curved surface portion.

11. the at least one magnetic field generator further comprises a first surface connecting the first end and the second end; 8. The magnetic sensor according to claim 7, wherein the center of the first surface in the second direction is closer to the top surface than the first end and farther from the top surface than the second end.

12. the at least one magnetoresistive element includes a first magnetoresistive element and a second magnetoresistive element spaced apart in the second direction; the at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator spaced apart in the second direction; the first magnetoresistive element is arranged such that at least a portion of the first magnetoresistive element overlaps with the first magnetic field generator when viewed from the first direction; the second magnetoresistive element is arranged such that at least a portion of the second magnetoresistive element overlaps with the second magnetic field generator when viewed from the first direction; 8. The magnetic sensor according to claim 7, wherein the distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction is different from the distance between the center of the first magnetoresistive element in the second direction and the center of the second magnetoresistive element in the second direction.

13. a substrate having a top surface; a support member disposed on the substrate; at least one magnetoresistive element disposed on the support member; at least one magnetic field generator disposed on the support member, the magnetic field generator including a ferromagnetic portion made of a ferromagnetic material and an antiferromagnetic portion made of an antiferromagnetic material and exchange-coupled with the ferromagnetic portion, the magnetic field generator being configured to generate a bias magnetic field to be applied to the at least one magnetoresistive element; the at least one magnetoresistive effect element and the at least one magnetic field generator are aligned along a first direction and are arranged such that at least a portion of the at least one magnetoresistive effect element overlaps with the at least one magnetic field generator when viewed from the first direction; the support member has a facing surface facing the at least one magnetoresistive element and the at least one magnetic field generator, the at least one magnetic field generator has a first end and a second end located at opposite ends in a second direction intersecting the first direction; in any cross section intersecting the at least one magnetic field generator and perpendicular to the first direction, an inclination angle formed by the opposing surface with respect to the upper surface is larger at a second position on the opposing surface that is closest to the second end than at a first position on the opposing surface that is closest to the first end, A magnetic sensor characterized in that the at least one magnetoresistive effect element has a third end and a fourth end located at both ends in the second direction, and is arranged so that the distance between the first end and the third end in the second direction is smaller than the distance between the second end and the fourth end in the second direction.

14. the at least one magnetic field generator further has a first surface connecting the first end and the second end, a film thickness that is a dimension in a direction perpendicular to the first surface, and includes a first portion that includes the first end and a second portion that includes the second end; 14. The magnetic sensor according to claim 13, wherein, in any cross section, the film thickness in the first portion is greater than the film thickness in the second portion.

15. the first end is located farther from the top surface than the second end; 14. The magnetic sensor according to claim 13, wherein the third end is located farther from the top surface than the fourth end.

16. the opposing surface includes a curved surface portion, 14. The magnetic sensor of claim 13, wherein at least one of the first end and the second end is on the curved portion.

17. the at least one magnetic field generator further comprises a first surface connecting the first end and the second end; 14. The magnetic sensor according to claim 13, wherein, in the arbitrary cross section, the inclination angle is smaller at the first position than at a third position on the opposing surface closest to the center of the first surface in the second direction, and is larger at the second position than at the third position.

18. the at least one magnetoresistive element includes a first magnetoresistive element and a second magnetoresistive element spaced apart in the second direction; the at least one magnetic field generator includes a first magnetic field generator and a second magnetic field generator spaced apart in the second direction; the first magnetoresistive element is arranged such that at least a portion of the first magnetoresistive element overlaps with the first magnetic field generator when viewed from the first direction; the second magnetoresistive element is arranged such that at least a portion of the second magnetoresistive element overlaps with the second magnetic field generator when viewed from the first direction; 14. The magnetic sensor according to claim 13, wherein the distance between the center of the first magnetic field generator in the second direction and the center of the second magnetic field generator in the second direction is different from the distance between the center of the first magnetoresistive element in the second direction and the center of the second magnetoresistive element in the second direction.

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