Semiconductor device and method of manufacturing semiconductor device

Abstract

To improve adhesion strength between a circuit board and a sealing resin layer and mountability while suppressing generation of voids remaining in a gap between a semiconductor chip and the circuit board.SOLUTION: The semiconductor device 1 includes a semiconductor chip 10, a circuit board 20, and a sealing resin layer 30. The layer 30 is formed in a sealed space S including a first sealed space S1 formed in a gap between the board 20 and the chip 10 and a second sealed space S2 formed so as to cover the chip 10. The circuit substrate 20 has one or more through holes 41 penetrating from a first surface S1 facing the chip 10 toward a second surface 20a opposite to the first surface 20a so that the first sealed space 20b communicates with the outside of the circuit substrate 20. The resin-filled portion 50 is formed inside the through hole 41, and the circuit substrate 20 does not have the solid resin portion 80 on the second surface 20b.SELECTED DRAWING: Figure 1A

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device. [Background technology]

[0002] Conventionally, semiconductor devices have been mold-sealed using a sealing resin to improve reliability and ensure strength. In a semiconductor device, a sealing resin layer is formed by filling a sealing space, which includes a first sealing space that is the gap between the semiconductor chip and the circuit board, and a second sealing space that is formed to cover the outer peripheral surface of the semiconductor chip, with the sealing resin.

[0003] However, due to the properties of the fluid, the sealing resin first flows into areas other than the first sealing space where the flow width is relatively wide, and then flows from the four sides of the semiconductor chip toward the center of the first sealing space. As a result, air remaining between the semiconductor chip and the circuit board in the semiconductor device cannot be expelled, which can lead to the formation of voids. These voids can reduce the reliability of the semiconductor device, such as causing short circuits at the connection terminals between the semiconductor chip and the circuit board.

[0004] In order to solve the above problem, Patent Document 1 below discloses a method for suppressing the formation of voids by discharging the air remaining between the semiconductor chip and the circuit board to the outside through a through-hole (penetration hole) that penetrates the circuit board. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2003-500833 Summary of the Invention [Problem to be solved by the invention]

[0006] In the device of Patent Document 1, resin passes through through holes formed in the circuit board and is molded and bonded to the underside of the circuit board, so the flow of resin can expel residual air between the semiconductor chip and the circuit board through the through holes to the outside, thereby suppressing the generation of voids in the device of Patent Document 1.

[0007] However, in the device of Patent Document 1, the resin wraps around to the underside of the circuit board, forming an overflow bead (solid resin). Because this solid resin is difficult to remove, the device of Patent Document 1 must be shipped with a convex bead attached to the underside. Therefore, when the semiconductor device of Patent Document 1 is mounted on an electronic device product having a fine shape, the remaining solid resin becomes an obstacle, making it difficult to make the product smaller and lighter, and reducing ease of mounting.

[0008] The present invention has been made in consideration of the above-mentioned problems, and specifically aims to provide a semiconductor device and a method for manufacturing a semiconductor device that can improve the adhesive strength and ease of mounting between the circuit board and the sealing resin layer while suppressing the occurrence of voids remaining in the gap between the semiconductor chip and the circuit board. [Means for solving the problem]

[0009] The above object can be achieved by any one of the following means (1) to (22).

[0010] (1) A semiconductor device including a circuit board, a semiconductor chip mounted on the circuit board, and an encapsulating resin layer encapsulating the semiconductor chip with encapsulating resin, wherein the encapsulating resin layer is formed in a encapsulating space including a first encapsulating space formed in a gap between the circuit board and the semiconductor chip, and a second encapsulating space formed to cover the semiconductor chip, the circuit board has an exhaust portion at a position overlapping with a projection surface in the thickness direction of the semiconductor chip, which exhausts residual air in the first encapsulating space to the outside, and a filled resin portion made of the encapsulating resin and connected to the encapsulating resin layer formed in the first encapsulating space is formed inside the exhaust portion, and the circuit board does not have a solid resin portion made of the encapsulating resin on the second surface.

[0011] (2) The semiconductor device described in (1) above, wherein the discharge portion is one or more through holes that penetrate from a first surface facing the semiconductor chip to a second surface opposite the first surface at a position overlapping with a projection surface in the thickness direction of the semiconductor chip so as to connect the first sealed space to the outside of the circuit board.

[0012] (3) The semiconductor device according to (2), wherein the filling resin portion has a sheared portion at a second end opposite to a first end facing the semiconductor chip.

[0013] (4) A semiconductor device according to (2) or (3) above, wherein the length from the second end of the filled resin portion to the second surface of the circuit board is 1 / 10 or less of the thickness direction length of the circuit board.

[0014] (5) A semiconductor device according to any one of (2) to (4) above, wherein the circuit board has a cavity between the second end of the filling resin portion opposite the first end facing the semiconductor chip and the second surface.

[0015] (6) The discharge portion is one or more through holes that penetrate from a first surface facing the semiconductor chip to a second surface opposite the first surface at a position overlapping a projection surface in a thickness direction of the semiconductor chip so that the first sealed space communicates with the outside of the circuit board, The semiconductor device described in (1) above, wherein the through hole includes a first hole portion communicating with the first sealing space and a second hole portion communicating with the first hole portion and the outside of the circuit board, and the second hole portion has a smaller diameter than the first hole portion.

[0016] (7) The semiconductor device according to (6), wherein the filling resin portion has a sheared portion at a second end opposite to a first end facing the semiconductor chip.

[0017] (8) A semiconductor device according to (6) or (7) above, wherein the length from the second end of the filled resin portion to the second surface of the circuit board is 1 / 10 or less of the thickness direction length of the circuit board.

[0018] (9) A semiconductor device described in any one of (6) to (8) above, wherein the first hole portion has a filled resin portion made of the sealing resin formed therein, and the second hole portion has a cavity portion formed by residual air in the first sealing space.

[0019] (10) The semiconductor device according to any one of (1) to (9) above, wherein the through-hole is formed near the center of a position overlapping with a projection surface in a thickness direction of the semiconductor chip.

[0020] (11) A method for manufacturing a semiconductor device, in which a molding apparatus is used to form an encapsulating resin layer for encapsulating a semiconductor chip mounted on a module component having a circuit board and the semiconductor chip, the encapsulating resin layer being formed in an encapsulating space including a first encapsulating space formed in a gap between the circuit board and the semiconductor chip and a second encapsulating space formed to cover the semiconductor chip, the circuit board having a first surface facing the semiconductor chip to a second surface opposite the first surface at a position overlapping a projection surface in a thickness direction of the semiconductor chip, the first encapsulating space communicating with the outside of the circuit board. a sealing step of injecting a sealing resin into a cavity formed by a mold part of the mold apparatus to seal the sealing space while the module component is placed in the cavity; a filling step of filling the through holes with a portion of the sealing resin that has flowed into the first sealing space; a demolding step of releasing a semiconductor device made of the module component encapsulated with the sealing resin from the mold part; and a peeling step of peeling the carrier substrate from the released semiconductor device.

[0021] (12) The method for manufacturing a semiconductor device according to (11) above, wherein the mold apparatus has an exhaust space formed in the mold part so as to communicate with the through hole, and further includes an air exhaust / resin injection step of injecting the sealing resin while exhausting residual air in the first sealing space into the exhaust space through the through hole, and the peeling step removes a resin solid portion formed by the sealing resin injected into the exhaust space when peeling the carrier substrate from the semiconductor device.

[0022] (13) A method for manufacturing a semiconductor device, which includes a circuit board and a semiconductor chip mounted on the circuit board, and which uses a mold apparatus to form an encapsulating resin layer that encapsulates the semiconductor chip, wherein the encapsulating resin layer is formed in a encapsulating space that includes a first encapsulating space formed in a gap between the circuit board and the semiconductor chip and a second encapsulating space formed to cover the semiconductor chip, and the circuit board has one or more through holes formed at a position overlapping a projection surface of the semiconductor chip in a thickness direction thereof, the through holes penetrating from a first surface facing the semiconductor chip to a second surface opposite the first surface so as to connect the first encapsulating space to the outside of the circuit board, the method including: a sealing step of filling the encapsulating resin into a cavity formed by a mold portion of the mold apparatus with the semiconductor device, and a filling step of filling the encapsulating resin that has flowed into the first encapsulating space into the through holes.

[0023] (14) The method for manufacturing a semiconductor device described in (13) above, wherein the mold apparatus has an exhaust path formed from the cavity to the outside of the mold apparatus so as to communicate with the through hole, and includes an exhaust step of exhausting residual air in the first sealed space from the exhaust path through the through hole.

[0024] (15) The method for manufacturing a semiconductor device according to (14) above, wherein the exhaust path is formed by electrical discharge machining and is formed near the center of a position overlapping with a projection surface in the thickness direction of the semiconductor chip.

[0025] (16) A method for manufacturing a semiconductor device as described in (14) above, wherein the mold part has a fitting groove formed in an area including the position where the exhaust path is formed, and a fitting member that is fitted into the fitting groove, and the exhaust path is formed by a gap that is formed when the fitting member is fitted into the fitting groove, and is formed near the center of a position that overlaps with a projection surface in the thickness direction of the semiconductor chip.

[0026] (17) A method for manufacturing a semiconductor device according to any one of (11) to (16) above, comprising a through hole forming step of forming one or more through holes that penetrate the circuit board and communicate with the first sealing space at positions that overlap with a projection surface in the thickness direction of the semiconductor chip.

[0027] (18) The method for manufacturing a semiconductor device according to any one of (11) to (17) above, wherein the through-hole is formed near the center of a position overlapping with a projection surface in the thickness direction of the semiconductor chip.

[0028] (19) A method for manufacturing a semiconductor device described in (11) or (17) above, wherein the through hole is formed by drilling from the second surface side of the circuit board near the center of the position overlapping with the projection surface in the thickness direction of the semiconductor chip.

[0029] (20) The method for manufacturing a semiconductor device according to any one of (11) to (18) above, wherein the sealing resin is a thermosetting resin having a viscosity of more than 0.01 Pa·s in an uncured state before curing.

[0030] (21) A semiconductor device manufactured by the manufacturing method described in any one of (11) to (20) above, wherein a filled resin portion made of the sealing resin that forms the sealing resin layer is formed inside the through hole, the filled resin portion has a shear portion formed at a second end opposite to a first end facing the semiconductor chip, and the circuit board does not have a solid resin portion made of the sealing resin on the second surface.

[0031] (22) A semiconductor device manufactured by the manufacturing method described in any one of (11) to (20) above, wherein a filled resin portion made of the sealing resin that forms the sealing resin layer is formed inside the through hole, and the circuit board has a cavity formed between a second end of the filled resin portion opposite to a first end facing the semiconductor chip and the second surface, and does not have a solid resin portion made of the sealing resin on the second surface. [Effects of the Invention]

[0032] According to the present invention, it is possible to improve the adhesive strength between the circuit board and the sealing resin layer and ease of mounting while suppressing the occurrence of voids remaining in the gap between the semiconductor chip and the circuit board. [Brief explanation of the drawings]

[0033] [Figure 1A] 1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention. [Figure 1B] 3 is a partially enlarged cross-sectional view of the vicinity of a through-hole in the semiconductor device of the first embodiment. FIG. [Figure 1C] FIG. 2 is a partially enlarged view of the vicinity of a through hole in the semiconductor device of the first embodiment. [Figure 2] FIG. 4 is a cross-sectional view showing a modified example of the semiconductor device of the first embodiment. [Figure 3A] FIG. 4 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention. [Figure 3B] FIG. 10 is a partially enlarged cross-sectional view of the vicinity of a through-hole in a semiconductor device according to a second embodiment. [Figure 3C] FIG. 10 is a partially enlarged view of the vicinity of a through hole in the semiconductor device of the second embodiment. [Figure 4] FIG. 10 is a cross-sectional view showing a modified example of the semiconductor device of the second embodiment. [Figure 5] FIG. 4 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention. [Figure 6] 1 is a flowchart of a manufacturing method A, which is a method for manufacturing a semiconductor device according to the present invention. [Figure 7A] 1A to 1C are diagrams showing the manufacturing method A in the order of steps. [Figure 7B] 1A to 1C are diagrams showing the manufacturing method A in the order of steps. [Figure 7C] 1A to 1C are diagrams showing the manufacturing method A in the order of steps. [Figure 7D] 1A to 1C are diagrams showing the manufacturing method A in the order of steps. [Figure 7E] 1A to 1C are diagrams showing the manufacturing method A in the order of steps. [Figure 7F] 1A to 1C are diagrams showing the manufacturing method A in the order of steps. [Figure 8] 4 is a flowchart of manufacturing method B, which is a method for manufacturing a semiconductor device according to the present invention. [Figure 9A] 1A to 1C are diagrams showing the manufacturing method B in order of steps. [Figure 9B] 1A to 1C are diagrams showing the manufacturing method B in order of steps. [Figure 9C] 1A to 1C are diagrams showing the manufacturing method B in order of steps. [Figure 9D] 1A to 1C are diagrams showing the manufacturing method B in order of steps. [Figure 9E] 1A to 1C are diagrams showing the manufacturing method B in order of steps. [Figure 9F] 1A to 1C are diagrams showing the manufacturing method B in order of steps. [Figure 9G] 1A to 1C are diagrams showing the manufacturing method B in order of steps. [Figure 10] 10 is a flowchart of a manufacturing method C, which is a method for manufacturing a semiconductor device according to the present invention. [Figure 11A] 1A to 1C are diagrams showing the manufacturing method C in the order of steps. [Figure 11B] 1A to 1C are diagrams showing the manufacturing method C in the order of steps. [Figure 11C] 1A to 1C are diagrams showing the manufacturing method C in the order of steps. [Figure 11D] 1A to 1C are diagrams showing the manufacturing method C in the order of steps. [Figure 12] 1 is a flowchart of manufacturing method D, which is a method for manufacturing a semiconductor device according to the present invention. [Figure 13A] 10A to 10C are diagrams showing the manufacturing method D in order of steps. [Figure 13B] 10A to 10C are diagrams showing the manufacturing method D in order of steps. [Figure 13C]10A to 10C are diagrams showing the manufacturing method D in order of steps. [Figure 13D] 10A to 10C are diagrams showing the manufacturing method D in order of steps. [Figure 13E] 10A to 10C are diagrams showing the manufacturing method D in order of steps. [Figure 14] 10A and 10B are diagrams showing other configurations of the exhaust path. [Figure 15] 1 is a flowchart of manufacturing method E, which is a method for manufacturing a semiconductor device according to the present invention. [Figure 16A] 1A to 1C are diagrams showing the manufacturing method E in the order of steps. [Figure 16B] 1A to 1C are diagrams showing the manufacturing method E in the order of steps. [Figure 16C] 1A to 1C are diagrams showing the manufacturing method E in the order of steps. [Figure 16D] 1A to 1C are diagrams showing the manufacturing method E in the order of steps. [Figure 17] 1 is a flowchart of a manufacturing method F, which is a method for manufacturing a semiconductor device according to the present invention. [Figure 18A] 1A to 1C are diagrams showing the manufacturing method F in the order of steps. [Figure 18B] 1A to 1C are diagrams showing the manufacturing method F in the order of steps. [Figure 18C] 1A to 1C are diagrams showing the manufacturing method F in the order of steps. [Figure 18D] 1A to 1C are diagrams showing the manufacturing method F in the order of steps. [Figure 18E] 1A to 1C are diagrams showing the manufacturing method F in the order of steps. [Figure 19] 1 is a flowchart of manufacturing method G, which is a method for manufacturing a semiconductor device according to the present invention. [Figure 20A] 1A to 1C are diagrams showing the manufacturing method G in order of steps. [Figure 20B] 1A to 1C are diagrams showing the manufacturing method G in order of steps. [Figure 20C] 1A to 1C are diagrams showing the manufacturing method G in order of steps. [Figure 20D] 1A to 1C are diagrams showing the manufacturing method G in order of steps. [Figure 20E] 1A to 1C are diagrams showing the manufacturing method G in order of steps. DETAILED DESCRIPTION OF THE INVENTION

[0034] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience. Meanwhile, the embodiments described below are merely examples, and various modifications are possible from such embodiments.

[0035] Hereinafter, the terms "upper" and "above" may include not only what is directly above in contact with something, but also what is above without contact. Similarly, the terms "lower" and "below" may include not only what is directly below in contact with something, but also what is below without contact.

[0036] The singular expression includes the plural expression unless the context clearly dictates otherwise. Furthermore, when a part "includes," "comprises," or "has" a certain element, it does not mean that it excludes other elements, but that it may further include other elements, unless otherwise specified to the contrary.

[0037] Unless the steps constituting the method are explicitly stated in order or stated to the contrary, the steps may be performed in any suitable order and are not necessarily limited to the order of the steps described. The use of any examples or exemplary terms is merely for the purpose of illustrating the technical idea, and the scope is not limited by said examples or exemplary terms, except as limited by the claims.

[0038] In the following description, when ordinal numbers such as "first" and "second" are used, unless otherwise specified, they are used for convenience and do not stipulate any particular order.

[0039] The configuration of a semiconductor device 1 according to a first embodiment of the present invention will be described.

[0040] As shown in FIG. 1A, the semiconductor device 1 includes a semiconductor chip 10, a circuit board 20, and a sealing resin layer 30.

[0041] The semiconductor chip 10 is formed of a semiconductor wafer or the like containing a semiconductor element such as silicon or a compound semiconductor such as SiC (Silicon Carbide). The semiconductor chip 10 has a first surface 10a and a second surface 10b opposite to the first surface 10a. An IC circuit pattern or the like is formed on the first surface 10a. Connection terminals 11 such as solder bumps for electrical connection to a circuit board 20 are formed on the second surface 10b. In FIG. 1A, the first surface 10a is the top surface of the semiconductor chip 10, and the second surface 10b is the bottom surface of the semiconductor chip 10.

[0042] The circuit board 20 is disposed below the semiconductor chip 10. The circuit board 20 is electrically connected to the semiconductor chip 10 through wiring portions (not shown) formed on the board and connection terminals 11 of the semiconductor chip 10. The circuit board 20 has a first surface 20a and a second surface 20b opposite to the first surface 20a. In FIG. 1A, the first surface 20a is the upper surface of the circuit board 20, and the second surface 20b is the lower surface of the circuit board 20, which functions as a mounting surface for other components.

[0043] In the semiconductor device 1, the sealing resin layer 30 is formed by filling a sealing space S formed in a region to be sealed of a module component 60 in which a semiconductor chip 10 is mounted on a circuit board 20 with sealing resin.

[0044] The sealing resin layer 30 is formed from a sealing resin made of a thermoplastic resin. The sealing resin layer 30 is formed by filling the sealing space S with the sealing resin. As shown in FIG. 7B , for example, the sealing space S may include a first sealing space S1 formed in the gap between the semiconductor chip 10 and the circuit board 20, and a second sealing space S2 formed to cover the semiconductor chip 10. In this embodiment, the first sealing space S1 is the space surrounded by a dashed line in the diagram of the manufacturing process such as FIG. 7B , and the second sealing space S2 is the space surrounded by the cavity 230 of the mold device 200.

[0045] The sealing resin is a thermosetting resin whose viscosity at room temperature (e.g., 20°C) in an uncured state exceeds 0.01 Pa·s. Specifically, epoxy resin, phenol resin, unsaturated polyester resin, etc. can be suitably used as the sealing resin.

[0046] The circuit board 20 is formed with at least one exhaust section 40 for exhausting residual air A in the first sealed space S1 to the outside. The exhaust section 40 exhausts residual air A (voids) in the first sealed space S1 to the outside when the sealing resin layer 30 is formed in the sealed space S of the module component 60. The residual air A in the first sealed space S1 is collected near the center of the semiconductor chip 10 due to the flow of the sealing resin. Therefore, as shown in FIG. 1A, in consideration of the exhaust efficiency of the residual air A, it is preferable to form the exhaust section 40 near the center of the position overlapping with the projection surface in the thickness direction of the semiconductor chip 10.

[0047] 1A, the exhaust portion 40 can be formed as one or more through holes 41 that penetrate from the first surface 20a to the second surface 20b of the circuit board 20. The through holes 41 communicate with the first sealed space S1. Therefore, residual air A in the first sealed space S1 is exhausted from the first sealed space S1 to the outside of the circuit board 20 through the through holes 41. In addition, a portion of the sealing resin that has flowed into the first sealed space S1 flows into and fills the through holes 41.

[0048] The number and diameter of the through holes 41 can be appropriately set depending on the viscosity of the sealing resin, the length of the gap between the semiconductor chip 10 and the circuit board 20, the thickness of the circuit board 20, the reduced pressure inside the mold device 200, the injection pressure of the sealing resin, etc. The diameter of the through holes 41 can be, for example, 0.05 mm or more and 0.1 mm or less.

[0049] The through holes 41 can be formed by drilling from the second surface 20b side of the circuit board 20. This prevents shavings from remaining on the first surface 20a of the circuit board 20 when forming the through holes 41. The through holes 41 can also be cut together with the carrier substrate 100 that is disposed on the second surface 20b of the circuit board 20.

[0050] When a portion of the sealing resin flows into and fills the discharge portion 40 when sealing the first sealed space S1, a filled resin portion 50 is formed inside the discharge portion 40 as the sealing resin hardens.

[0051] As shown in FIG. 1B, the filled resin portion 50 is formed by sealing resin filled in the through hole 41. The filled resin portion 50 has a first end portion 51 on the semiconductor chip 10 side and a second end portion 52 opposite the first end portion 51. The dotted line shown in FIG. 1A is an imaginary line for clearly indicating the filled resin portion 50. The filled resin portion 50 has a shear portion 53 formed at the second end portion 52.

[0052] 1C, sheared portion 53 is formed on the outer surface of second end portion 52 and includes concave or convex linear portions, uneven portions, etc. Therefore, at least a portion of the end surface of second end portion 52 is rough rather than smooth. Since sheared portion 53 is formed by shearing a portion of filled resin portion 50, it can be located slightly inside second surface 20b of circuit board 20.

[0053] The sheared portions 53 are formed when the carrier substrate 100 arranged on the second surface 20b of the circuit board 20 is peeled off during the manufacture of the semiconductor device 1. The sheared portions 53 can be formed, for example, in the peeling step shown in Figures 7E and 9F, when the solid resin portion 80 exposed on the second surface 20b side of the circuit board 20 is removed. The sheared portions 53 can also be formed, for example, in the demolding step shown in Figure 13E, when the semiconductor device 1 is released from the mold part 210 after the encapsulating resin layer 30 is formed.

[0054] Because filled resin portion 50 has shear portion 53 at second end 52, at least a portion of second end 52 is located at the same height as second surface 20b of circuit board 20 or inside circuit board 20. Therefore, semiconductor device 1 does not have solid resin portion 80 exposed on second surface 20b of circuit board 20, and can therefore be mounted without restriction on electronic device products with fine shapes.

[0055] In the semiconductor device 1, the length from the second end 52 of the filled resin portion 50 to the second surface 20b of the circuit board 20 is preferably 1 / 10 or less of the length in the thickness direction of the circuit board 20. This makes the difference in level between the semiconductor device 1 and the second surface 20b of the circuit board 20 at the position of the through hole 41 very small. Therefore, the semiconductor device 1 does not require secondary processing such as polishing of the second surface 20b of the circuit board 20 after manufacturing, and can be mounted without restrictions on devices having minute shapes.

[0056] FIG. 2 shows a modified example of the semiconductor device 1 of the first embodiment. As shown in FIG. 2, the semiconductor device 1 may have a cavity 70 formed by residual air A between the second end 52 of the filled resin portion 50 and the second surface 20b of the circuit board 20. That is, the semiconductor device 1 may also have a configuration in which the sealing resin is not filled entirely into the through hole 41. When the semiconductor device 1 has the cavity 70, the second end 52 of the filled resin portion 50 may have a smooth surface. Because the cavity 70 is formed on the side opposite to the side facing the sealed space S (the side of the second end 52 of the filled resin portion 50 inside the through hole 41), the problem of short-circuiting of the connection terminals 11 does not occur.

[0057] As described above, the semiconductor device 1 of the first embodiment includes a circuit board 20, a semiconductor chip 10 mounted on the circuit board 20, and an encapsulating resin layer 30 that encapsulates the semiconductor chip 10 with encapsulating resin. The encapsulating resin layer 30 is formed in a encapsulating space S, which includes a first encapsulating space S1 formed in the gap between the circuit board 20 and the semiconductor chip 10 and a second encapsulating space S2 formed to cover the semiconductor chip 10. The circuit board 20 has one or more through holes 41 that function as discharge portions 40 that penetrate from the first surface 20a to the second surface 20b at a position that overlaps with the projection surface in the thickness direction of the semiconductor chip 10 and that connect the first encapsulating space S1 to the outside of the circuit board 20. A filled resin portion 50 made of encapsulating resin is formed inside the through hole 41, and the circuit board 20 does not have a solid resin portion 80 made of encapsulating resin on the second surface 20b.

[0058] The semiconductor device 1 can exhaust residual air A from the first sealing space S1 through the through holes 41, thereby suppressing the generation of voids between the semiconductor chip 10 and the circuit board 20 when forming the sealing resin layer 30. Furthermore, the semiconductor device 1 has a filled resin portion 50 formed in the exhaust portion 40, improving the adhesive strength between the circuit board 20 and the sealing resin layer 30. Furthermore, the semiconductor device 1 does not have a solid resin portion 80 made of sealing resin formed on the second surface 20b of the circuit board 20, improving ease of mounting and allowing the semiconductor device 1 to be mounted without restrictions on electronic device products with fine shapes.

[0059] Next, a semiconductor device 1A according to a second embodiment will be described. In the semiconductor device 1A according to the second embodiment, the same components as those of the semiconductor device 1 according to the first embodiment described above will be denoted by the same reference numerals, and the description thereof will be omitted. Furthermore, the components not specifically mentioned can be configured in the same manner as the first embodiment described above.

[0060] The semiconductor device 1A of the second embodiment differs from the semiconductor device 1 in the form of the discharge portion 40.

[0061] The semiconductor device 1A of the second embodiment includes a semiconductor chip 10, a circuit board 20, and an encapsulating resin layer 30. The semiconductor device 1A has one or more through holes 42 functioning as exhaust portions 40 that connect the first sealed space S1 to the outside of the circuit board 20 at positions that overlap with the projection surface in the thickness direction of the semiconductor chip 10.

[0062] As shown in Figure 3A or 3B, the through hole 42 is a multi-stage hole including a first hole portion 42a that is concave from the first surface 20a toward the second surface 20b of the circuit board 20, and a second hole portion 42b that penetrates from the bottom of the first hole portion 42a to the second surface 20b so as to communicate with the first hole portion 42a and the outside of the circuit board 20.

[0063] 3B, the first hole portion 42a of the through-hole 42 communicates with the first sealed space S1. Therefore, the residual air A in the first sealed space S1 is discharged from the first sealed space S1 to the outside of the circuit board 20 through the first hole portion 42a and the second hole portion 42b.

[0064] The number and diameter of the first holes 42a can be set appropriately depending on the viscosity of the sealing resin, the length of the gap between the semiconductor chip 10 and the circuit board 20, the thickness of the circuit board 20, the reduced pressure of the mold device 200, the injection pressure of the sealing resin, etc. The diameter of the first holes 42a can be, for example, 0.05 mm or more and 0.1 mm or less.

[0065] The diameter of the second hole 42b is at least smaller than the diameter of the first hole 42a. The diameter of the second hole 42b has a length that allows at least the residual air A in the first sealed space S1 and the sealing resin to flow in.

[0066] After the residual air A passes through, a portion of the sealing resin that has flowed into the first sealed space S1 flows into and fills the through-holes 42, forming a filled resin portion 50.

[0067] The filled resin portion 50 has a first end 51 on the semiconductor chip 10 side and a second end 52 opposite the first end 51. As shown in FIG. 3C, the filled resin portion 50 has a sheared portion 53 at the second end 52. The dotted line shown in FIG. 3A is an imaginary line for clearly illustrating the filled resin portion 50. Because the sheared portion 53 is formed by shearing a portion of the filled resin portion 50, at least a portion of the sheared portion 53 may be located slightly inside the second surface 20b of the circuit board 20. Therefore, the circuit board 20 does not have a solid resin portion 80 made of sealing resin on the second surface 20b.

[0068] A modified example of the semiconductor device 1A of the second embodiment is shown in Fig. 4. The semiconductor device 1A may have a configuration in which a filled resin portion 50 is formed in a part of the second hole portion 42b and a cavity portion 70 formed with residual air A in the remaining portion, as shown in Fig. 4.

[0069] The cavity 70 can be formed when the amount of sealing resin flowing into the second hole 42b is small. Furthermore, the cavity 70 can be formed throughout the entire interior of the second hole 42b when the hole diameter of the second hole 42b is long enough to allow only residual air A to flow through. In other words, the semiconductor device 1A may have a configuration in which the filled resin portion 50 is formed in at least a portion of the second hole 42b, or a configuration in which the filled resin portion 50 is not formed in the second hole 42b. When the semiconductor device 1A has the cavity 70, the second end 52 of the filled resin portion 50 can have a smooth surface.

[0070] As described above, the semiconductor device 1A can discharge residual air A from the first sealing space S1 through the through holes 42, thereby suppressing the generation of voids between the semiconductor chip 10 and the circuit board 20 when forming the sealing resin layer 30. Furthermore, the semiconductor device 1A has a filled resin portion 50 formed in the through holes 42, improving the adhesive strength between the circuit board 20 and the sealing resin layer 30. Furthermore, the semiconductor device 1A does not have a solid resin portion 80 made of sealing resin formed on the second surface 20b of the circuit board 20, improving ease of mounting and allowing the device to be mounted without restrictions on electronic device products with fine shapes.

[0071] Next, a semiconductor device 1B of a third embodiment will be described. In the semiconductor device 1B of the third embodiment, the same components as those of the semiconductor device 1 of the first embodiment and the semiconductor device 1A of the second embodiment are denoted by the same reference numerals, and their description will be omitted. Furthermore, the components not specifically mentioned can be configured in the same manner as those of the first and second embodiments.

[0072] The semiconductor device 1B of the third embodiment differs from the semiconductor devices 1 and 1A in the form of the discharge portion 40.

[0073] The semiconductor device 1B of the third embodiment includes a semiconductor chip 10, a circuit board 20, and an encapsulating resin layer 30. The semiconductor device 1B has one or more grooves 43 functioning as discharge portions 40 in communication with the first encapsulating space S1 at positions overlapping with the projection surface in the thickness direction of the semiconductor chip 10.

[0074] 5, the groove 43 can be formed in a concave shape extending from the first surface 20a toward the second surface 20b of the circuit board 20. The groove 43 communicates with the first sealed space S1, and residual air A in the first sealed space S1 is discharged through the groove 43. A portion of the sealing resin that has flowed into the first sealed space S1 flows into and fills the groove 43. The groove 43 only needs to have a depth and an opening diameter that allow the sealing resin to flow in while accommodating at least the residual air A discharged from the first sealed space S1.

[0075] A filled resin portion 50 is formed inside the groove portion 43. The filled resin portion 50 has a first end portion 51 on the semiconductor chip 10 side and a second end portion 52 opposite the first end portion 51. The dotted line shown in FIG. 5 is an imaginary line for clearly indicating the filled resin portion 50. In the semiconductor device 1B, the second end portion 52 of the filled resin portion 50 can have a smooth surface. A cavity portion 70 consisting of residual air A is formed between the filled resin portion 50 and the groove portion 43.

[0076] As described above, the semiconductor device 1B includes the circuit board 20, the semiconductor chip 10 mounted on the circuit board 20, and the sealing resin layer 30 that seals the semiconductor chip 10 with sealing resin. The sealing resin layer 30 is formed in a sealed space S, which includes a first sealed space S1 formed in the gap between the circuit board 20 and the semiconductor chip 10, and a second sealed space S2 formed to cover the semiconductor chip 10. The circuit board 20 has one or more grooves 43 that function as discharge portions 40 and are recessed from the first surface 20a toward the second surface 20b so as to communicate with the first sealed space S1, at a position that overlaps with the projection surface in the thickness direction of the semiconductor chip 10. A filled resin portion 50 made of sealing resin is formed inside the grooves 43, and a cavity 70 made of residual air A is formed between the filled resin portion 50 and the grooves 43.

[0077] In the semiconductor device 1B, residual air A in the first sealing space S1 can be discharged into the groove portion 43, thereby suppressing the generation of voids between the semiconductor chip 10 and the circuit board 20 when forming the sealing resin layer 30. Furthermore, in the semiconductor device 1B, a filled resin portion 50 is formed in the groove portion 43, thereby improving the adhesive strength between the circuit board 20 and the sealing resin layer 30. Furthermore, in the semiconductor device 1B, a solid resin portion 80 made of sealing resin is not formed on the second surface 20b of the circuit board 20, thereby improving ease of mounting and allowing the semiconductor device 1B to be mounted without restrictions on electronic device products with fine shapes.

[0078] Next, a method for manufacturing a semiconductor device will be described.

[0079] The manufacturing methods (manufacturing methods A to G) of semiconductor devices according to the embodiments of the present invention are methods for filling the sealing space S of the module components 60 constituting the semiconductor devices 1, 1A, and 1B with sealing resin to form the sealing resin layer 30. Note that the manufacturing methods described below can be performed in a different order or can include other steps as appropriate without departing from the spirit of the present invention.

[0080] A first manufacturing method, a semiconductor device manufacturing method (hereinafter referred to as "manufacturing method A") will be described. Fig. 6 is a flowchart showing a series of processes in manufacturing method A. Figs. 7A to 7F are block diagrams showing the steps of manufacturing method A.

[0081] As shown in FIG. 7B and other figures, the mold apparatus 200 used in manufacturing method A includes a mold part 210 that forms a cavity 230 in which the module component 60 is placed, and one or more injection channels 220 that inject the sealing resin into the cavity 230. The mold apparatus 200 injects the sealing resin into the cavity 230 by reducing the pressure inside the cavity 230 and applying a uniform pressure. The mold part 210 is divided into multiple parts to allow the semiconductor device 1 to be attached and detached. The mold part 210 can be moved by a drive mechanism (not shown). The injection channel 220 is located on the side of the mold part 210. The sealing resin is stored in a container (not shown) and is injected into the cavity 230 through the injection channel 220. Note that the mold apparatus 200 may include other components in addition to the configuration described above.

[0082] 6, the manufacturing method A includes a preparing step ST1, an arranging step ST2, a sealing step ST3, a filling step ST4, a demolding step ST5, and a peeling step ST6. Hereinafter, the manufacturing method A will be described as a method for manufacturing the semiconductor device 1.

[0083] The preparation step ST1 prepares the module components 60 that constitute the semiconductor device 1, the carrier substrate 100 that is placed on the circuit board 20 of the module components 60, and the mold device 200 that is used to form the sealing resin layer 30.

[0084] 7A, in the placement step ST2, the carrier substrate 100 is placed on the second surface 20b of the circuit board 20 of the module component 60. As a result, the carrier substrate 100 of the module component 60 is placed on the circuit board 20.

[0085] The carrier substrate 100 has a through hole 110 that communicates with the through hole 41. The through hole 110 may be formed in advance to match the formation position of the through hole 41 formed in the circuit board 20, or may be formed simultaneously when the through hole 41 is formed in the circuit board 20.

[0086] 7B and 7C, in the sealing step ST3, with the module component 60 placed in a cavity 230 formed by the mold part 210 of the mold device 200, the cavity 230 is filled with sealing resin to form a sealing resin layer 30 in the sealing space S. The sealing resin flows in the cavity 230 to fill the second sealing space S2, which has a relatively wide flow width, and then flows from the side surface 4 of the semiconductor chip 10 toward the center of the first sealing space S1. The sealing resin fills the sealing space S (first sealing space S1, second sealing space S2) with sealing resin, forming a sealing resin layer 30 on the module component 60, which becomes the semiconductor device 1.

[0087] In the filling step ST4, as shown in FIG. 7D, part of the sealing resin injected into the cavity 230 in the sealing step ST3 is filled into the through holes 41 and 110.

[0088] As shown in Figures 7B and 7C, the sealing resin first flows into the second sealed space S2 and gradually changes direction as it flows toward the center of the first sealed space S1, which has a narrower flow path width. As a result, residual air A in the first sealed space S1 collects near the center of the first sealed space S1 as the encapsulating resin flows. Then, as shown in Figure 7D, the sealing resin flows into and fills the through holes 41 and 110 while pushing the residual air A in the first sealed space S1 into the through holes 41. As a result, the residual air A passes through the through holes 41 and moves into the through holes 110.

[0089] The sealing resin filled in the filling step ST4 fills the through holes 41 in the process of pushing the residual air A into the through holes 41, and some of the sealing resin may flow into the through holes 110 of the carrier substrate 100. The sealing resin filled in the through holes 41 and 110 forms a filled resin portion 50.

[0090] In the demolding step ST5, the semiconductor device 1 on which the encapsulating resin layer 30 has been formed is demolded from the mold part 210.

[0091] In the peeling step ST6, the carrier substrate 100 is peeled off from the semiconductor device 1, as shown in FIG. 7E. In the peeling step ST6, the carrier substrate 100 is peeled off by moving it parallel to the second surface 20b of the circuit board 20. Before the carrier substrate 100 is peeled off, the second end 52 of the filled resin portion 50 formed in the through hole 41 is adhered near the opening of the through hole 110 formed in the carrier substrate 100. Therefore, the carrier substrate 100 is peeled off with a portion of the filled resin portion 50 adhering near the opening of the through hole 110. Therefore, in the semiconductor device 1, as shown in FIG. 1B, a portion of the filled resin portion 50 is sheared off, and a sheared portion 53 is formed at the second end 52 of the filled resin portion 50. Then, the semiconductor device 1 is completed through the peeling step ST6, as shown in FIG. 7F.

[0092] A second manufacturing method for a semiconductor device (hereinafter referred to as "manufacturing method B") will now be described. Fig. 8 is a flowchart showing a series of processes in manufacturing method B. Figs. 9A to 9G are diagrams showing the steps of manufacturing method B.

[0093] The manufacturing method B differs from the manufacturing method A in that the residual air A is discharged into an exhaust space 240 formed in the mold part 210 of the mold device 200 .

[0094] As shown in FIG. 9B and other figures, the mold apparatus 200A used in manufacturing method B includes a mold part 210 that forms a cavity 230, one or more injection paths 220 that inject sealing resin into the cavity 230, and an exhaust space 240. The mold apparatus 200A has the same configuration and function as the mold apparatus 200 described above, except for the inclusion of the exhaust space 240. The exhaust space 240 is formed in the mold part 210. The exhaust space 240 is partially filled with the residual air A and sealing resin in the first sealing space S1 that have been exhausted through the through holes 41 and 110. Note that the mold apparatus 200A may include other components in addition to the configuration described above.

[0095] 8, the manufacturing method B includes a preparing step ST11, an arranging step ST12, a sealing step ST13, a filling step ST14, an air evacuation / resin injection step ST15, a demolding step ST16, a peeling step ST17, and a removing step ST 18. Hereinafter, the manufacturing method B will be described as a method for manufacturing the semiconductor device 1.

[0096] In the preparation step ST11, the module component 60 that constitutes the semiconductor device 1, the carrier substrate 100 that is placed on the circuit board 20 of the module component 60, and the mold apparatus 200A that is used to form the sealing resin layer 30 are prepared.

[0097] 9A, in the placement step ST12, the carrier substrate 100 is placed on the second surface 20b of the circuit board 20 of the module component 60. As a result, the carrier substrate 100 of the module component 60 is placed on the circuit board 20.

[0098] As shown in Figures 9B and 9C, the sealing process ST13 involves placing a module component 60 in a cavity 230 formed by the mold portion 210 of the mold device 200A, and filling the cavity 230 with sealing resin to form a sealing resin layer 30 in the sealed space S.

[0099] 9D , in the filling step ST14, a portion of the sealing resin injected into cavity 230 in sealing step ST13 is filled into through hole 41 and through hole 110. Residual air A moves to through hole 110 as the sealing resin flows into through holes 41 and 110. The sealing resin filled in through holes 41 and 110 forms filled resin portion 50.

[0100] 9E, in the air exhaust / resin injection step ST15, residual air A that has passed through through holes 41 and 110 is exhausted into exhaust space 240, while a portion of sealing resin is injected into exhaust space 240. The movement of residual air A can occur when sealing resin flows into through holes 41 and 110. As a result, exhaust space 240 is partially filled with residual air A and sealing resin.

[0101] In the demolding step ST16, the semiconductor device 1 on which the encapsulating resin layer 30 has been formed is demolded from the mold part 210.

[0102] In the peeling step ST17, the carrier substrate 100 is peeled off from the semiconductor device 1, as shown in FIG. 9F. In the peeling step ST17, when peeling off the carrier substrate 100 arranged on the circuit board 20, the solid resin portion 80 made of the sealing resin injected into the inside of the through-hole 110 and the exhaust space 240 is removed. As a result, the semiconductor device 1 is in a state where the solid resin portion 80 is absent from the second surface 20b of the circuit board 20. Furthermore, a sheared portion 53 is formed at the second end 52 of the filled resin portion 50 due to peeling off the carrier substrate 100. Then, the semiconductor device 1 is completed through the peeling step ST17, as shown in FIG. 9G.

[0103] Next, a third manufacturing method for a semiconductor device (hereinafter referred to as "manufacturing method C") will be described. Fig. 10 is a flowchart showing a series of processes in manufacturing method C. Figs. 11A to 11D are diagrams showing the steps of manufacturing method C.

[0104] Manufacturing method C differs from manufacturing method A in that carrier substrate 100 is not placed on circuit board 20 and that residual air A is discharged into through-hole 41 to form cavity 70.

[0105] 10, the manufacturing method C includes a preparing step ST21, a sealing step ST22, a filling step ST23, and a demolding step ST24. Hereinafter, the manufacturing method C will be described as a method for manufacturing the semiconductor device 1.

[0106] In the preparation step ST21, the module components 60 that constitute the semiconductor device 1 and the mold apparatus 200 that is used to form the sealing resin layer 30 are prepared.

[0107] As shown in Figures 11A and 11B, the sealing process ST22 involves placing a module component 60 in a cavity 230 formed by a mold portion 210 of a mold device 200, and filling the cavity 230 with sealing resin to form a sealing resin layer 30 in the sealed space S.

[0108] 11C , in the filling step ST23, a portion of the sealing resin injected into the cavity 230 in the sealing step ST22 is filled into the through hole 41. The residual air A moves into the through hole 41. The movement of the residual air A can be caused by the sealing resin flowing into the through hole 41. The residual air A that has moved into the through hole 41 forms a hollow portion 70 on the second end portion 52 side of the filled resin portion 50 inside the through hole 41.

[0109] In the demolding step ST24, the semiconductor device 1 on which the encapsulating resin layer 30 has been formed is demolded from the mold part 210. Then, the semiconductor device 1 is completed through the demolding step ST24, as shown in FIG.

[0110] Next, a fourth manufacturing method, a semiconductor device manufacturing method (hereinafter referred to as "manufacturing method D") will be described. Fig. 12 is a flowchart showing a series of processes in manufacturing method D. Figs. 13A to 13E are configuration diagrams showing the steps of manufacturing method D. Fig. 14 is a diagram showing a modified example of a mold apparatus 200 used in manufacturing method D.

[0111] Manufacturing method D differs from manufacturing method A in that the carrier substrate 100 is not placed on the circuit board 20 and the residual air A is discharged through an exhaust path 250 that penetrates from the cavity 230 to the outside of the mold device 200 .

[0112] As shown in FIG. 13B and other figures, the mold apparatus 200B used in manufacturing method D includes a mold part 210 that forms a cavity 230, one or more injection paths 220 that inject a sealing resin into the cavity 230, and an exhaust path 250. The mold apparatus 200B has the same configuration and function as the mold apparatus 200 described above, except that it includes the exhaust path 250. The mold apparatus 200B may include other components in addition to the configuration described above.

[0113] The exhaust path 250 is formed in the mold part 210 so as to communicate with the through hole 41. The exhaust path 250 is formed near the center of the position overlapping with the projection surface in the thickness direction of the semiconductor chip 10. The exhaust path 250 has a hole diameter that allows only the residual air A to flow through. The exhaust path 250 exhausts the residual air A in the first sealed space S1 that has been discharged through the through hole 41 to the outside of the mold device 200B.

[0114] The exhaust path 250 can be formed by applying electric discharge machining to the mold part 210. Alternatively, as shown in Fig. 14, the exhaust path 250 can be formed by forming a part of the mold part 210 so that it is detachable, and by fitting a fitting member 270 into a fitting groove 260 formed in the mold part 210, forming the gap. Note that the exhaust path 250 is not limited to the above-mentioned formation method as long as it is formed with a hole diameter that allows only the residual air A to be discharged to the outside of the mold part 210.

[0115] 12, the manufacturing method D includes a preparing step ST31, a sealing step ST32, a filling step ST33, an exhausting step ST34, and a demolding step ST35. Hereinafter, the manufacturing method D will be described as a method for manufacturing the semiconductor device 1.

[0116] In the preparation step ST31, the module components 60 that constitute the semiconductor device 1 and the mold apparatus 200B that is used to form the sealing resin layer 30 are prepared.

[0117] As shown in Figures 13A and 13B, in the sealing process ST32, a module component 60 is placed in a cavity 230 formed by a mold portion 210 of a mold device 200B, and a sealing resin is filled into the cavity 230 to form a sealing resin layer 30 in the sealed space S.

[0118] 13C, in the filling step ST33, a portion of the sealing resin injected into the cavity 230 in the sealing step ST13 is filled into the through-hole 41. The residual air A moves into the through-hole 41. The movement of the residual air A can occur due to the sealing resin flowing into the through-hole 41. The sealing resin filled in the through-hole 41 forms a filled resin portion 50.

[0119] 13D, in the exhaust step ST34, the residual air A that has passed through the through-holes 41 is exhausted to the outside of the mold device 200B through the exhaust path 250. The movement of the residual air A can occur when the sealing resin flows into the through-holes 41.

[0120] In the demolding step ST35, the semiconductor device 1 on which the encapsulating resin layer 30 has been formed is demolded from the mold part 210. The second end 52 of the filled resin part 50 formed in the through hole 41 may be adhered to the bottom of the mold part 210 before demolding. Therefore, the semiconductor device 1 is demolded with a portion of the filled resin part 50 adhering to the mold part 210 near the opening of the through hole 41. Therefore, as shown in FIG. 1B, a portion of the filled resin part 50 of the semiconductor device 1 may be sheared, and a sheared part 53 may be formed at the second end 52 of the filled resin part 50. Then, the semiconductor device 1 is completed through the demolding step ST35 as shown in FIG. 13E.

[0121] In manufacturing method D, in filling step ST33, the sealing resin is poured into through hole 41 to form filled resin portion 50. However, depending on the amount of sealing resin flowing into through hole 41, the sealing resin may remain inside through hole 41 and not adhere to mold part 210. In this case, through hole 41 forms cavity 70 on the second end 52 side of filled resin portion 50, as shown in FIG.

[0122] Next, a fifth manufacturing method, a semiconductor device manufacturing method (hereinafter referred to as "manufacturing method E") will be described. Fig. 15 is a flowchart showing a series of processes in manufacturing method E. Figs. 16A to 16D are diagrams showing the steps of manufacturing method E.

[0123] Manufacturing method E differs from manufacturing method A in that a carrier substrate 100 is not placed on the circuit board 20, and that residual air A is discharged into the second hole portion 42b of the through-hole 42 to form a cavity portion 70. Manufacturing method E uses a mold device 200 as shown in Fig. 16A etc.

[0124] 15, the manufacturing method E includes a preparing step ST41, a sealing step ST42, a filling step ST43, and a demolding step ST44. Hereinafter, the manufacturing method E will be described as a method for manufacturing the semiconductor device 1A.

[0125] In the preparation step ST41, the module components 60 that constitute the semiconductor device 1A and the mold apparatus 200 that is used to form the sealing resin layer 30 are prepared.

[0126] In the sealing process ST42, as shown in FIG. 16A, a module component 60 is placed in a cavity 230 formed by a mold portion 210 of a mold device 200, and a sealing resin is filled into the cavity 230 to form a sealing resin layer 30 in the sealed space S.

[0127] 16B and 16C, in the filling step ST43, a portion of the sealing resin injected into the cavity 230 in the sealing step ST42 is filled into the through hole 42. The sealing resin fills at least the first hole portion 42a of the through hole 42, and may also partially flow into the second hole portion 42b depending on the amount of sealing resin flowing into the through hole 42. Residual air A moves into the through hole 42. The movement of residual air A may occur due to the flow of sealing resin into the through hole 42. The residual air A that has moved to the through hole 42 forms a cavity 70 on the second end portion 52 side of the filled resin portion 50 in the through hole 42.

[0128] In the demolding step ST44, the semiconductor device 1 on which the encapsulating resin layer 30 has been formed is demolded from the mold part 210. Then, the semiconductor device 1A is completed through the demolding step ST44, as shown in Fig. 16D.

[0129] Next, a sixth manufacturing method, a semiconductor device manufacturing method (hereinafter referred to as "manufacturing method F") will be described. Fig. 17 is a flowchart showing a series of processes in manufacturing method F. Figs. 18A to 18E are diagrams showing the steps of manufacturing method F.

[0130] Manufacturing method F differs from manufacturing method A in that the carrier substrate 100 is not placed on the circuit board 20, and that residual air A is discharged into an exhaust space 240 formed in the mold part 210 of the mold device 200. Manufacturing method F uses a mold device 200A as shown in Fig. 18A etc. The exhaust space 240 communicates with the second hole part 42b of the through hole 42, and is filled with residual air A discharged through the through hole 42.

[0131] 17, the manufacturing method F includes a preparing step ST51, a sealing step ST52, a filling step ST53, an air evacuating step ST54, and a demolding step ST55. Hereinafter, the manufacturing method F will be described as a method for manufacturing the semiconductor device 1A.

[0132] In the preparation step ST51, the module components 60 that constitute the semiconductor device 1A and the mold apparatus 200A that is used to form the sealing resin layer 30 are prepared.

[0133] As shown in Figures 18A and 18B, the sealing process ST52 involves placing a module component 60 in a cavity 230 formed by the mold portion 210 of the mold device 200B, and filling the cavity 230 with sealing resin to form a sealing resin layer 30 in the sealed space S.

[0134] 18C , in the filling step ST53, a portion of the sealing resin injected into the cavity 230 in the sealing step ST52 is filled into the through-hole 42. The sealing resin fills at least the first hole portion 42a, and may also partially flow into the second hole portion 42b depending on the amount of sealing resin flowing into the through-hole 42. The sealing resin filled into the through-hole 42 forms a filled resin portion 50. A cavity 70 is formed between the second end portion 52 of the filled resin portion 50 and the second surface 20b of the circuit board 20.

[0135] 18D, in the air discharge step ST54, the residual air A that has passed through the through-holes 42 is discharged into the exhaust space 240. The movement of the residual air A can occur due to the flow of the sealing resin into the through-holes 42. As a result, the exhaust space 240 is filled with the residual air A.

[0136] In the demolding step ST55, the semiconductor device 1 on which the encapsulating resin layer 30 has been formed is demolded from the mold part 210. Then, the semiconductor device 1A is completed through the demolding step ST55, as shown in Fig. 18E.

[0137] Next, a seventh manufacturing method, a semiconductor device manufacturing method (hereinafter referred to as "manufacturing method G") will be described. Fig. 19 is a flowchart showing a series of processes in manufacturing method G. Figs. 20A to 20E are block diagrams showing the steps of manufacturing method G.

[0138] Manufacturing method G differs from manufacturing method A in that carrier substrate 100 is not placed on circuit board 20, and residual air A is exhausted from cavity 230 through exhaust path 250 penetrating to the outside of mold device 200B. Manufacturing method G uses mold device 200B as shown in Fig. 20A etc.

[0139] 19, the manufacturing method G includes a preparing step ST61, a sealing step ST62, a filling step ST63, an exhausting step ST64, and a demolding step ST65. Hereinafter, the manufacturing method G will be described as a method for manufacturing the semiconductor device 1A.

[0140] In the preparation step ST61, the module components 60 that constitute the semiconductor device 1A and the mold apparatus 200B that is used to form the sealing resin layer 30 are prepared.

[0141] As shown in Figures 20A and 20B, in the sealing process ST62, a module component 60 is placed in a cavity 230 formed by the mold portion 210 of the mold device 200B, and a sealing resin is filled into the cavity 230 to form a sealing resin layer 30 in the sealed space S.

[0142] 20C , in the filling step ST63, a portion of the sealing resin injected into the cavity 230 in the sealing step ST52 is filled into the through-hole 42. The sealing resin is filled into at least the first hole portion 42a, and a portion of the sealing resin also flows into the second hole portion 42b depending on the amount of sealing resin flowing into the through-hole 42. The sealing resin filled into the through-hole 42 forms a filled resin portion 50.

[0143] 20D, in the exhaust step ST64, the residual air A that has passed through the through-holes 42 is exhausted to the outside of the mold device 200B through the exhaust path 250. The movement of the residual air A can occur when the sealing resin flows into the through-holes 42.

[0144] In the demolding step ST65, the semiconductor device 1A on which the encapsulating resin layer 30 has been formed is demolded from the mold part 210. The second end 52 of the filled resin part 50 formed in the through hole 42 may be adhered to the bottom of the mold part 210 before demolding. Therefore, the semiconductor device 1 is demolded with a portion of the filled resin part 50 adhering to the mold part 210 near the opening of the through hole 42. Therefore, as shown in FIG. 3B, a portion of the filled resin part 50 of the semiconductor device 1A may be sheared, and a sheared part 53 may be formed at the second end 52 of the filled resin part 50. Then, the semiconductor device 1A is completed through the demolding step ST65 as shown in FIG. 20E.

[0145] In manufacturing method G, in filling step ST63, the sealing resin is poured into the through hole 42 to form the filled resin portion 50. However, depending on the amount of sealing resin that flows in, the sealing resin may remain inside the through hole 42 and not adhere to the mold portion 210. In this case, as shown in FIG. 4, a hollow portion 70 is formed in the through hole 42 on the second end 52 side of the filled resin portion 50. The hollow portion 70 can also be formed in the second hole portion 42b when the hole diameter of the second hole portion 42b is long enough to allow only residual air A to flow through. In this case, the filled resin portion 50 is formed only in the first hole portion 42a.

[0146] Incidentally, the above-mentioned manufacturing methods A to G may include a through hole forming process for forming one or more through holes 41 or 42 that penetrate the circuit board 20 and communicate with the first sealing space S1 at a position that overlaps with the projection surface in the thickness direction of the semiconductor chip 10.

[0147] In the through-hole forming step, the through-holes are preferably formed by drilling from the second surface 20b side of the circuit board 20. The shavings produced during drilling can be discharged from the side opposite to the cutting direction. Therefore, the semiconductor device 1 can be prevented from having shavings remaining on the first surface 20a of the circuit board 20. The through-hole forming step can be performed, for example, before the sealing step of each manufacturing method. Furthermore, in the through-hole forming step, when the through-holes 41 and 42 are formed, the through-holes 110 can also be formed simultaneously in the carrier substrate 100 used in manufacturing method A or manufacturing method B.

[0148] Furthermore, in the above-described manufacturing methods A to G, the residual air A is discharged to the discharge portion 40 (through holes 41 and 42) by the flow of the sealing resin filled in the sealed space S. However, in manufacturing methods A to G, a suction mechanism (not shown) can be connected to the discharge portion 40 to forcibly suck and discharge the residual air A from the first sealed space S1. If the timing to start suction by the suction mechanism is set, for example, after the sealing resin has flowed into the first sealed space S1, the residual air A can be efficiently discharged without sucking in unnecessary air.

[0149] As described above, the semiconductor device 1 according to this embodiment includes the circuit board 20, the semiconductor chip 10 mounted on the circuit board 20, and the sealing resin layer 30 that seals the semiconductor chip 10 with sealing resin. The sealing resin layer 30 is formed in a sealed space S that includes a first sealed space S1 formed in the gap between the circuit board 20 and the semiconductor chip 10, and a second sealed space S2 formed to cover the semiconductor chip 10. The circuit board 20 has an exhaust portion 40 that exhausts residual air A in the first sealed space S1 to the outside at a position that overlaps with the projection surface in the thickness direction of the semiconductor chip 10. A filled resin portion 50 made of sealing resin is formed inside the through hole 41, and the circuit board 20 does not have a solid resin portion 80 made of sealing resin on the second surface 20b.

[0150] With this configuration, the semiconductor device 1 allows residual air A in the first sealing space S1 to be discharged through the discharge portion 40, thereby suppressing the generation of voids between the semiconductor chip 10 and the circuit board 20 when forming the sealing resin layer 30. Furthermore, the semiconductor device 1 has a filled resin portion 50 formed in the discharge portion 40, improving the adhesive strength between the circuit board 20 and the sealing resin layer 30. Furthermore, the semiconductor device 1 does not have a solid resin portion 80 made of sealing resin formed on the second surface 20b of the circuit board 20, improving ease of mounting and allowing the device to be mounted without restrictions on electronic device products with fine shapes.

[0151] The method for manufacturing a semiconductor device according to this embodiment is a method for forming, using a mold apparatus 200, an encapsulating resin layer 30 that encapsulates the semiconductor chip 10 in a module component 60 having a circuit board 20 and a semiconductor chip 10 mounted on the circuit board 20, the encapsulating resin layer 30 being formed in an encapsulating space S that includes a first encapsulating space S1 formed in the gap between the circuit board 20 and the semiconductor chip 10 and a second encapsulating space S2 formed to cover the semiconductor chip 10. The circuit board 20 has one or more through holes 41 formed at a position overlapping with the projection surface in the thickness direction of the semiconductor chip 10, the through holes 41 penetrating from a first surface 20a facing the semiconductor chip 10 to a second surface 20b opposite the first surface 20a so as to communicate the first encapsulating space S1 with the outside of the circuit board 20. The method further includes an arrangement step of arranging the carrier substrate 100 on the second surface 20b of the circuit board 20 of the module component 60, a sealing step of injecting sealing resin into the cavity 230 formed by the mold section 210 of the mold device 200 while the module component 60 is arranged in the cavity 230 to seal the sealing space S, a filling step of filling the through holes 41 with some of the sealing resin that has flowed into the first sealing space S1, a demolding step of releasing the semiconductor device 1 consisting of the module component 60 sealed with the sealing resin from the mold section 210, and a peeling step of peeling the carrier substrate 100 from the released semiconductor device 1.

[0152] Another semiconductor device manufacturing method according to the present embodiment is a method of forming an encapsulating resin layer 30 for encapsulating the semiconductor chip 10 in a module component 60 having a circuit board 20 and a semiconductor chip 10 mounted on the circuit board 20, using a mold apparatus 200, the encapsulating resin layer 30 being formed in an encapsulating space S including a first encapsulating space S1 formed in the gap between the circuit board 20 and the semiconductor chip 10 and a second encapsulating space S2 formed to cover the semiconductor chip 10. The circuit board 20 has one or more through holes 41 formed at a position overlapping with the projection surface in the thickness direction of the semiconductor chip 10, the through holes 41 penetrating from a first surface 20a facing the semiconductor chip 10 to a second surface 20b opposite the first surface 20a so as to communicate the first encapsulating space S1 with the outside of the circuit board 20. The method includes a sealing process in which, with the module component 60 placed in the cavity 230 formed by the mold portion 210 of the mold device 200, sealing resin is injected into the cavity 230 to seal the sealing space S, and a filling process in which a portion of the sealing resin that has flowed into the first sealing space S1 is filled into the through hole 41.

[0153] With this configuration, the semiconductor device 1 manufactured by the above-described manufacturing method can discharge residual air A from the first sealing space S1 through the through holes 41, thereby suppressing the generation of voids between the semiconductor chip 10 and the circuit board 20 when forming the sealing resin layer 30. Furthermore, since the filled resin portion 50 is formed in the through holes 41, the semiconductor device 1 improves the adhesive strength between the circuit board 20 and the sealing resin layer 30. Furthermore, since the semiconductor device 1 does not have a resin solid portion 80 made of sealing resin formed on the second surface 20b of the circuit board 20, the ease of mounting is improved and the semiconductor device 1 can be mounted without restrictions on electronic device products with fine shapes. [Explanation of symbols]

[0154] 1, 1A, 1B Semiconductor devices, 10 semiconductor chips, 10a: a first surface of a chip substrate; 10b second surface of the chip substrate; 11 connection terminal, 20 circuit boards, 20a: a first surface of the circuit board; 20b second surface of the circuit board; 30 Sealing resin layer, 40 Discharge section, 41, 42 through holes, 42a 1st hole, 42b 2nd hole, 43 Groove, 50 filling resin part, 51 first end; 52 second end; 53 shear section, 60 modular parts, 70 Cavity, 80 resin solid parts, 100 carrier board, 110 through holes, 200, 200A, 200B mold equipment, 210 Mold section, 220 injection path, 230 cavity, 240 exhaust space, 250 exhaust duct, 260 mating groove, 270 fitting members, A residual air, S sealed space, S1 first sealed space, S2 Second sealed space.

Claims

1. A semiconductor device including a circuit board, a semiconductor chip mounted on the circuit board, and an encapsulation resin layer that encapsulates the semiconductor chip with encapsulation resin, the sealing resin layer is formed in a sealing space including a first sealing space formed in a gap between the circuit board and the semiconductor chip, and a second sealing space formed so as to cover the semiconductor chip; the circuit board has an exhaust portion at a position overlapping with a projection surface in a thickness direction of the semiconductor chip, the exhaust portion exhausting residual air in the first sealed space to the outside, a filling resin portion made of the sealing resin and connected to the sealing resin layer formed in the first sealing space is formed inside the discharge portion; The semiconductor device, wherein the circuit board does not have a solid resin portion made of the sealing resin on the second surface.

2. 2. The semiconductor device according to claim 1, wherein the discharge portion is one or more through holes that penetrate from a first surface facing the semiconductor chip to a second surface opposite the first surface at a position that overlaps with a projection surface in the thickness direction of the semiconductor chip, so that the first sealed space communicates with the outside of the circuit board.

3. The semiconductor device according to claim 2 , wherein the filled resin portion has a sheared portion at a second end opposite to a first end facing the semiconductor chip.

4. The semiconductor device according to claim 3 , wherein the length from the second end of the filled resin portion to the second surface of the circuit board is equal to or less than 1 / 10 of the length of the circuit board in the thickness direction.

5. 3. The semiconductor device according to claim 2, wherein the circuit board has a cavity between a second end of the filled resin portion opposite the first end facing the semiconductor chip and the second surface.

6. the discharge portion is one or more through holes that penetrate from a first surface facing the semiconductor chip to a second surface opposite to the first surface at a position overlapping a projection surface in a thickness direction of the semiconductor chip so that the first sealed space communicates with the outside of the circuit board, the through hole includes a first hole portion communicating with the first sealed space and a second hole portion communicating with the first hole portion and the outside of the circuit board, The semiconductor device according to claim 1 , wherein the second hole has a smaller diameter than the first hole.

7. The semiconductor device according to claim 6 , wherein the filled resin portion has a sheared portion at a second end opposite to a first end facing the semiconductor chip.

8. The semiconductor device according to claim 7 , wherein the length from the second end of the filled resin portion to the second surface of the circuit board is equal to or less than 1 / 10 of the length of the circuit board in the thickness direction.

9. the first hole portion is formed with the filling resin portion made of the sealing resin, The semiconductor device according to claim 6 , wherein the second hole portion has a cavity formed by residual air in the first sealed space.

10. The semiconductor device according to claim 1 , wherein the discharge portion is formed near the center of a position overlapping with a projection surface in a thickness direction of the semiconductor chip.

11. 1. A method for manufacturing a semiconductor device, comprising: forming, on a module component having a circuit board and a semiconductor chip mounted on the circuit board, a sealing resin layer that seals the semiconductor chip using a mold device; the sealing resin layer is formed in a sealing space including a first sealing space formed in a gap between the circuit board and the semiconductor chip, and a second sealing space formed so as to cover the semiconductor chip; the circuit board has one or more through holes formed at a position overlapping with a projection surface of the semiconductor chip in a thickness direction thereof, the through holes passing through from a first surface facing the semiconductor chip to a second surface opposite to the first surface, so that the first sealed space communicates with the outside of the circuit board; a placement step of placing a carrier substrate on the second surface of the circuit board of the module component; a sealing step of injecting a sealing resin into a cavity formed by a mold portion of the mold device, with the module component placed in the cavity, to seal the sealing space; a filling step of filling the through-hole with a portion of the sealing resin that has flowed into the first sealing space; a demolding step of demolding a semiconductor device made up of the module components encapsulated with the encapsulation resin from the mold part; a peeling step of peeling the carrier substrate from the released semiconductor device; A method for manufacturing a semiconductor device, comprising:

12. the mold device has an exhaust space formed in the mold portion so as to communicate with the through hole, further comprising an air exhaust / resin injection step of injecting the sealing resin while exhausting residual air in the first sealing space into the exhaust space through the through hole, The method for manufacturing a semiconductor device according to claim 11 , wherein the peeling step removes a solid resin portion formed of the sealing resin injected into the exhaust space when peeling the carrier substrate from the semiconductor device.

13. A method for manufacturing a semiconductor device, comprising: forming an encapsulating resin layer on a semiconductor device including a circuit board and a semiconductor chip mounted on the circuit board, the encapsulating resin layer encapsulating the semiconductor chip using a mold apparatus; the sealing resin layer is formed in a sealing space including a first sealing space formed in a gap between the circuit board and the semiconductor chip, and a second sealing space formed so as to cover the semiconductor chip; the circuit board has one or more through holes formed at a position overlapping with a projection surface of the semiconductor chip in a thickness direction thereof, the through holes penetrating from a first surface facing the semiconductor chip to a second surface opposite to the first surface so that the first sealed space communicates with the outside of the circuit board; a sealing step of filling a sealing resin into a cavity formed by a mold part of the mold apparatus with the semiconductor device disposed in the cavity to form the sealing resin layer; a filling step of filling the through-hole with the sealing resin that has flowed into the first sealing space; A method for manufacturing a semiconductor device, comprising:

14. the mold device has an exhaust passage formed to pass through from the cavity to the outside of the mold device so as to communicate with the through hole; The method for manufacturing a semiconductor device according to claim 13 , further comprising the step of evacuating residual air from the first sealed space through the exhaust path via the through hole.

15. The method for manufacturing a semiconductor device according to claim 14 , wherein the exhaust path is formed by electrical discharge machining near the center of a position overlapping with a projection surface in a thickness direction of the semiconductor chip.

16. the mold part has a fitting groove formed in an area including a position where the exhaust passage is formed, and a fitting member fitted into the fitting groove, 15. The method for manufacturing a semiconductor device according to claim 14, wherein the exhaust path is a gap formed when the fitting member is fitted into the fitting groove, and is formed near the center of a position overlapping with a projection surface in the thickness direction of the semiconductor chip.

17. 14. The method for manufacturing a semiconductor device according to claim 11, further comprising a through hole forming step of forming one or more through holes that penetrate the circuit board and communicate with the first sealed space at positions that overlap with a projection surface in a thickness direction of the semiconductor chip.

18. The method for manufacturing a semiconductor device according to claim 11 or 13, wherein the through-hole is formed near the center of a position overlapping with a projection surface in a thickness direction of the semiconductor chip.

19. The method for manufacturing a semiconductor device according to claim 11 or 13, wherein the through hole is formed by drilling from the second surface side of the circuit board near the center of a position overlapping with a projection surface in a thickness direction of the semiconductor chip.

20. The method for manufacturing a semiconductor device according to claim 11 or 13, wherein the sealing resin is a thermosetting resin having a viscosity of more than 0.01 Pa·s in an uncured state before curing.

21. Produced by the production method according to claim 11 or 13, a filling resin portion made of the sealing resin that forms the sealing resin layer is formed inside the through hole; the filled resin portion has a shear portion formed at a second end portion opposite to a first end portion facing the semiconductor chip, The semiconductor device, wherein the circuit board does not have a solid resin portion made of the sealing resin on the second surface.

22. Produced by the production method according to claim 11 or 13, a filling resin portion made of the sealing resin that forms the sealing resin layer is formed inside the through hole; The circuit board has a cavity formed between a second end of the filled resin portion opposite the first end facing the semiconductor chip and the second surface, and does not have a solid resin portion made of the sealing resin on the second surface.

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